WO2014100962A1 - 等离子体放电装置 - Google Patents

等离子体放电装置 Download PDF

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Publication number
WO2014100962A1
WO2014100962A1 PCT/CN2012/087355 CN2012087355W WO2014100962A1 WO 2014100962 A1 WO2014100962 A1 WO 2014100962A1 CN 2012087355 W CN2012087355 W CN 2012087355W WO 2014100962 A1 WO2014100962 A1 WO 2014100962A1
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Prior art keywords
gas
plasma
radio frequency
discharge device
outlet
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PCT/CN2012/087355
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English (en)
French (fr)
Inventor
贾少霞
张宸
杨景华
王守国
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中国科学院微电子研究所
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Publication of WO2014100962A1 publication Critical patent/WO2014100962A1/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32348—Dielectric barrier discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2431—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes using cylindrical electrodes, e.g. rotary drums

Definitions

  • the present invention relates to the field of silicon wafer cleaning technology, and in particular, to a plasma discharge device. Background technique
  • the traditional way to clean the surface of silicon wafers is to use wet chemical methods.
  • wet chemical methods There are many problems to be solved in wet chemical methods.
  • the cleaning is not thorough enough, the waste liquid generated by cleaning is easy to pollute the environment, the solution is easy to introduce impurities, and the consumption is large.
  • Water and acid At present, there has been a dry cleaning device that works under vacuum and needs to continuously cut off the work of the device, take out the silicon wafer, put another batch of silicon wafer, vacuum, and then discharge the cleaning, resulting in equipment operation. Complex, high cost, and can not achieve continuous online work;
  • some atmospheric pressure cleaning technologies have emerged using metal electrodes, which have the disadvantage of easily introducing metal impurities.
  • the technical problem to be solved by the present invention is to provide a plasma discharge device.
  • the present invention provides a plasma discharge device including two RF electrodes, a dielectric barrier layer, a gas-trapping plate, a gas source, a radio frequency power source, and a metal casing; and the RF power source is connected to the RF electrode ;
  • the metal casing is grounded when the discharge device is in operation
  • the radio frequency electrode is covered by a dielectric barrier layer
  • the hooking plate is located above the dielectric barrier layer;
  • the working gas provided by the gas source reaches the plasma nozzle through a shrinkage port formed by the gas-trapping plate, and a large-area glow plasma is formed at the nozzle after the power is turned on under normal pressure. Body, the plasma is ejected outward under the carrying of the airflow.
  • the gas-trapping plate is divided into three layers, wherein a layer of the gas-gas plate adjacent to the radio frequency electrode is provided with an outlet for contracting the gas flow, so that the working gas passes through the third outlet and reaches between the RF electrodes. spout.
  • the first layer of hooking plate is composed of two hooking plates, and a gas outlet is disposed between the two hooking plates, and a gas outlet is disposed between the two hooking plates and the metal casing;
  • the second layer of hooking plate is composed of a hooking plate, and a gas outlet is disposed between the hooking plate and the metal casing;
  • the third layer of hooking plate is composed of two said hooking plates, respectively, which are respectively connected with the metal casing, and an outlet for gas contraction airflow is disposed between the two gas distributing plates.
  • outlet area for the gas contraction gas flow provided in the third layer of the gas trap is smaller than the area between the two radio frequency electrodes.
  • both of the RF electrodes are in the form of semi-circular metal strips, and the plasma is only transferred along a semi-circular arc when the device is discharged.
  • the surface of the metal casing is provided with a holed insulating block, and the RF power source is connected to the RF electrode through the insulating block.
  • the plasma discharge device provided by the invention has two RF electrodes which are semi-circular metal strips.
  • the plasma When the device is in operation, the plasma is only transferred along the arc surface, avoiding scattering discharge, improving discharge efficiency, and contracting airflow of the device.
  • the outlet increases the gas flow rate, and the plasma is sprayed toward the material to be treated under the carrying of the gas stream, and reacts with the organic matter on the surface of the material to be treated to generate carbon dioxide and water, which can be directly discharged into the atmosphere.
  • the atmospheric pressure dielectric barrier plasma discharge device is used for cleaning the surface of the silicon wafer, cleaning or activating the liquid crystal glass plate, cleaning or improving the hydrophilicity or hydrophobicity of the surface of the PCB or other organic material.
  • the metal radio frequency electrode of the invention is covered by the dielectric barrier layer, and the metal casing and the radio frequency electrode are also separated by the dielectric barrier layer, which can overcome the easy introduction in the prior art.
  • the disadvantage of metal impurities Due to the use of the RF electrode of the circular metal strip, the plasma generated by the discharge is transferred along the arc surface, the scattering discharge is avoided, and the discharge efficiency is improved.
  • the shrinkage uniformity plate can effectively increase the gas flow rate and increase the plasma.
  • the length of the spout of the body reduces the requirements of the device for the shape of the material to be treated.
  • FIG. 1 is a schematic diagram of a principle of a plasma discharge device according to an embodiment of the present invention.
  • FIG 2 is an external view of a plasma discharge device according to an embodiment of the present invention.
  • a plasma discharge device includes two semicircular RF electrodes 107, a dielectric barrier layer 106 coated on the outside of the RF electrode, a metal casing 104 as a ground electrode, a radio frequency electrode and a metal shell.
  • the two RF electrodes 107 are semi-circular metal strips. When the device is discharged, the plasma is only transferred along the arc surface, which improves the discharge efficiency and enlarges the contact area between the plasma and the surface of the material to be processed such as the silicon wafer.
  • the first layer of the gas-trapping plate is composed of two gas-trapping plates, and a gas outlet is disposed between the two gas-gasifying plates, and between the two gas-gasifying plates and the metal casing Both are provided with a gas outlet.
  • the second layer of hooking plate is composed of a hooking plate, and a gas outlet is arranged between the hooking plate and the metal casing;
  • the third layer of hooking plate is composed of two of the hooking plates, the two hooks
  • the gas plates are respectively connected to the metal casing, and an outlet for gas contraction flow is disposed between the two gas plates, and the outlet is similar to an inverted "eight" shape.
  • the dielectric barrier layer 106 is an insulating material such as quartz or ceramic.
  • the gas source 101 provides a gas such as helium gas, argon gas, oxygen gas, nitrogen gas, carbon tetrafluoride or the like, or a gas in which a certain gas is mixed in a certain ratio. After passing through the flowmeter 102, the gas enters the gas supply line 103. After passing through the two layers of the gas-trapping plate, the gas is distributed evenly, and then accelerated by the third layer of the homogenizing plate to enter the nozzle between the two RF electrodes 107.
  • the RF electrode 107 Under normal pressure, when the RF electrode 107 is connected to the RF power source 111, after the power is turned on, at the nozzle A large area of glow plasma 1 1 0 is formed, and the plasma 1 10 is transferred along the arc surface of the electrode, and is ejected by the air flow.
  • the plasma 1 10 When reaching the surface of the material to be processed 108 on the stage 109, it reacts with photoresist or other organic substances on the surface of the material to be processed to form products such as carbon dioxide and water, except for removing photoresist or other organic substances on the surface of the substrate.
  • the device can also clean or modify the surface of the liquid crystal glass plate, PCB board and the like.
  • the atmospheric pressure dielectric barrier plasma discharge device is connected to the air inlet 201 of the device, and the two ends of the RF electrode 107 are separated from the metal casing 104 by a dielectric barrier layer 112.
  • the surface of the metal casing has an insulating block 203 with a hole, and the connection between the RF power source and the RF electrode is isolated from the metal casing 104 by the insulating block 203.
  • the present invention provides an atmospheric pressure dielectric barrier plasma discharge device.
  • the two RF electrodes of the device are semi-circular metal strips.
  • the plasma is only transferred along the arc surface, thereby avoiding scattering discharge.
  • the discharge efficiency is improved, and the contracted gas flow outlet of the device increases the gas flow rate.
  • the plasma is sprayed toward the material to be treated under the flow of the gas, reacts with the organic matter on the surface of the material to be treated, and generates carbon dioxide and water.
  • the device is used for cleaning silicon. Surface activation of surface photoresist, glass surface organics, metal or organic materials.
  • the RF electrode uses a semi-circular metal strip, when the device is discharged, the plasma is only transferred along the arc surface, which improves the discharge efficiency and enlarges the contact area between the plasma and the surface of the material to be processed such as the silicon wafer.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)

Abstract

一种等离子体放电装置，包括两个射频电极（107）、介质阻挡层（106）、匀气板（105）、气源（101）、射频电源（111）和金属外壳（104）；其中射频电源（111）与射频电极（107）连接；放电装置在工作时，金属外壳（104）接地；射频电极（107）被介质阻挡层（106）包覆；两个射频电极（107）之间为等离子体喷口；匀气板（105）位于介质阻挡层（106）上方；气源（101）提供的工作气体通过由匀气板（105）构成的收缩口，到达等离子体喷口，并在常压下，电源接通后，在喷口处形成大面积的辉光等离子体（110），等离子体（110）在气流的携带下向外喷出。该等离子体放电装置能够避免散射性放电，提高了放电效率和气流速率，增大了等离子体喷出喷口的长度，降低了装置对被处理材料（108）的形状等要求。

Description

等离子体放电装置 技术领域
本发明涉及硅片清洗技术领域， 特别涉及一种等离子体放电装置。 背景技术
在半导体生产中， 清洗硅片表面光刻胶工艺占据了十分重要的环节， 清洗的好坏直接影响器件的稳定性和可靠性。 在其他行业中， 液晶玻璃平 板、 PCB板等材料表面除了需要清洗表面有机污染物外， 还需要改善材料 表面的亲水性或疏水性。
传统清洗硅片表面的方式是采用湿法化学方法， 湿法化学方法存在许 多亟待解决的问题， 例如清洗不够彻底、 清洗产生的废液易对环境造成污 染、 采用溶液容易引进杂质、 消耗大量的水和酸等。 目前已经出现了一种 干法清洗装置， 这种清洗装置工作在真空状态下， 需要不断切断设备工作， 取出硅片， 放入另一批硅片， 抽真空， 然后进行放电清洗， 导致设备操作 复杂、 成本高， 不能实现连续在线工作； 此外， 已经出现的一些常压清洗 技术采用了金属电极， 存在易引入金属杂质的缺点。
发明内容
本发明所要解决的技术问题是提供一种等离子体放电装置。
为解决上述技术问题， 本发明提供了一种等离子体放电装置， 包括两 个射频电极、 介质阻挡层、 勾气板、 气源、 射频电源和金属外壳； 所述射 频电源与所述射频电极连接；
放电装置在工作时， 所述金属外壳接地；
所述射频电极被介质阻挡层包覆；
两个射频电极之间为等离子体喷口；
所述勾气板位于所述介质阻挡层上方； 所述气源提供的工作气体通过由所述勾气板构成的收缩口， 到达所述 等离子体喷口， 并在常压下， 电源接通后， 在所述喷口处形成大面积的辉 光等离子体， 等离子体在气流的携带下向外喷出。
进一步地， 所述勾气板分为三层， 其中， 靠近所述射频电极的一层匀 气板设置有用于收缩气流的出口， 使得工作气体通过所述第三出口后到达 射频电极之间的喷口。
进一步地， 第一层勾气板由两个勾气板构成， 该两个勾气板之间设置 有气体出口， 该两个该勾气板与所述金属外壳之间均设置有气体出口； 第二层勾气板由一个勾气板构成， 该勾气板与所述金属外壳之间均设 置有气体出口；
第三层勾气板由两个所述勾气板构成， 该两个勾气板分别与所述金属 外壳连接， 该两个匀气板之间设置有用于气体收缩气流的出口。
进一步地， 在第三层勾气板设置的所述用于气体收缩气流的出口面积 小于两个射频电极之间的面积。
进一步地， 两个所述射频电极均是呈半圓形金属条， 在装置放电时， 等离子体仅沿着半圓形弧面转移。
进一步地， 所述金属壳体表面设置有带孔的绝缘块， 所述射频电源通 过所述绝缘块与所述射频电极的连接。
本发明提供的等离子体放电装置， 两个射频电极均为半圓形金属条， 装置工作时， 等离子体仅沿着弧面转移， 避免了散射性放电， 提高了放电 效率， 装置的收缩状气流出口提高了气流速率， 等离子体在气流的携带下 喷向被处理材料， 与被处理材料表面的有机物发生反应， 生成二氧化碳和 水， 可以直接排放到大气中。 常压介质阻挡等离子体放电装置用于清洗硅 片表面光刻胶、 清洗或活化液晶玻璃平板、 清洗或改善 PCB板或其他有机 材料表面的亲水性或疏水性。 本发明的金属射频电极被介质阻挡层包覆， 金属外壳与射频电极之间也被介质阻挡层隔离， 能克服现有技术中易引入 金属杂质这一缺点。 由于采用板圓形金属条的射频电极， 使得放电产生的 等离子体沿着弧面转移， 避免了散射性放电， 提高了放电效率， 采用收缩 状匀气板， 可有效提高气流速率， 增大等离子体喷出喷口的长度， 降低了 装置对被处理材料的形状等要求。
附图说明
图 1为本发明实施例提供的等离子体放电装置原理示意图。
图 2为本发明实施例提供的等离子体放电装置外形图。
具体实施方式
参见图 1, 本发明实施例提供的等离子体放电装置， 包括两个半圓形 射频电极 107、 包覆在射频电极外面的介质阻挡层 106、作为接地电极的金 属外壳 104、射频电极与金属壳体之间的介质阻挡层 112、装置内部的三层 匀气板 105、 一个射频电源 111、 气源 101、 流量计 102以及供气管路 103。 两个射频电极 107均呈半圓形金属条， 装置放电时， 等离子体仅沿着弧面 转移， 提高了放电效率， 扩大了等离子体与硅片等被处理材料表面的接触 面积。
在三层勾气板 105中， 第一层勾气板由两个勾气板构成， 该两个匀气 板之间设置有气体出口， 该两个该匀气板与所述金属外壳之间均设置有气 体出口。 第二层勾气板由一个勾气板构成， 该勾气板与所述金属外壳之间 均设置有气体出口； 第三层勾气板由两个所述勾气板构成， 该两个勾气板 分别与所述金属外壳连接， 该两个匀气板之间设置有用于气体收缩气流的 出口， 该出口类似倒 "八" 字型。
介质阻挡层 106为石英或陶瓷等绝缘材料。气源 101提供氦气、氩气、 氧气、 氮气、 四氟化碳等气体或几种气体按一定比例混合的气体。 气体经 过流量计 102后进入供气管路 103, 气体经过两层勾气板后， 分布较为均 匀， 再经过第三层匀气板收缩加速， 进入两个射频电极 107之间的喷口。 在常压下， 当射频电极 107与射频电源 111接通后， 电源接通后， 在喷口 处形成大面积的辉光等离子体 1 1 0 , 等离子体 1 1 0沿着电极弧面转移， 并 在气流的带动下， 喷射出来。 当到达载物台 1 09上的被处理材料 1 08表面 时， 与被处理材料表面的光刻胶或其它有机物反应， 生成二氧化碳、 水等 产物， 除了去除村底表面光刻胶或其它有机物外， 该装置还可以对液晶玻 璃平板、 PCB板等表面进行清洗或改性。
参见图 2 , 该常压介质阻挡等离子体放电装置， 供气管路 1 03与装置 的进气口 201连接， 射频电极 1 07两端与金属壳体 1 04之间通过介质阻挡 层 1 1 2隔离， 金属壳体表面有带孔的绝缘块 203 , 射频电源与射频电极的 连接， 通过绝缘块 203与金属外壳 1 04隔离。
本发明实施例提供的一种常压介质阻挡等离子体放电装置， 装置的两 个射频电极均为半圓形金属条， 装置工作时， 等离子体仅沿着弧面转移， 避免了散射性放电， 提高了放电效率， 装置的收缩状气流出口提高了气流 速率， 等离子体在气流的携带下喷向被处理材料， 与被处理材料表面的有 机物发生反应， 生成二氧化碳和水， 该装置用于清洗硅片表面光刻胶、 玻 璃表面有机物、 金属或有机材料表面活化。 由于射频电极采用了半圓形金 属条， 装置放电时， 等离子体仅沿着弧面转移， 提高了放电效率， 扩大了 等离子体与硅片等被处理材料表面的接触面积。 而非限制， 尽管参照实例对本发明进行了详细说明， 本领域的普通技术人 员应当理解， 可以对本发明的技术方案进行修改或者等同替换， 而不脱离 本发明技术方案的精神和范围，其均应涵盖在本发明的权利要求范围当中。

Claims

权 利 要 求 书
1、 一种等离子体放电装置， 其特征在于： 包括两个射频电极、 介质阻 挡层、 勾气板、 气源、 射频电源和金属外壳； 所述射频电源与所述射频电 极连接；
放电装置在工作时， 所述金属外壳接地；
所述射频电极被介质阻挡层包覆；
两个射频电极之间为等离子体喷口；
所述勾气板位于所述介质阻挡层上方；
所述气源提供的工作气体通过由所述勾气板构成的收缩口， 到达所述 等离子体喷口， 并在常压下， 电源接通后， 在所述喷口处形成大面积的辉 光等离子体， 等离子体在气流的携带下向外喷出。
2、 根据权利要求 1所述的等离子体放电装置， 其特征在于：
所述勾气板分为三层， 其中， 靠近所述射频电极的一层勾气板设置有 用于收缩气流的出口， 使得工作气体通过所述第三出口后到达射频电极之 间的喷口。
3、 根据权利要求 2所述的等离子体放电装置， 其特征在于：
第一层勾气板由两个勾气板构成，该两个勾气板之间设置有气体出口， 该两个该勾气板与所述金属外壳之间均设置有气体出口；
第二层勾气板由一个勾气板构成， 该勾气板与所述金属外壳之间均设 置有气体出口；
第三层勾气板由两个所述勾气板构成， 该两个勾气板分别与所述金属 外壳连接， 该两个匀气板之间设置有用于气体收缩气流的出口。
4、 根据权利要求 3所述的等离子体放电装置， 其特征在于：
在第三层勾气板设置的所述用于气体收缩气流的出口面积小于两个射 频电极之间的面积。
5、 根据权利 1所述的等离子体放电装置， 其特征在于： 两个所述射频电极均是呈半圓形金属条， 在装置放电时， 等离子体仅 沿着半圓形弧面转移。
6、 根据权利要求 1所述等离子体放电装置， 其特征在于：
所述金属壳体表面设置有带孔的绝缘块， 所述射频电源通过所述绝缘 块与所述射频电极的连接。
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