WO2019155841A1 - 固体撮像素子および撮像装置 - Google Patents

固体撮像素子および撮像装置 Download PDF

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Publication number
WO2019155841A1
WO2019155841A1 PCT/JP2019/001236 JP2019001236W WO2019155841A1 WO 2019155841 A1 WO2019155841 A1 WO 2019155841A1 JP 2019001236 W JP2019001236 W JP 2019001236W WO 2019155841 A1 WO2019155841 A1 WO 2019155841A1
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Prior art keywords
pixel
electrode
transistor
potential
unit
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Ceased
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PCT/JP2019/001236
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English (en)
French (fr)
Japanese (ja)
Inventor
丸山　俊介
喜昭 稲田
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to KR1020207018290A priority Critical patent/KR102609647B1/ko
Priority to EP19750263.6A priority patent/EP3751840B1/en
Priority to JP2019570639A priority patent/JP7272969B2/ja
Priority to CN201980010831.8A priority patent/CN111656769B/zh
Priority to US16/966,130 priority patent/US11595596B2/en
Priority to CN202310531452.1A priority patent/CN116744130A/zh
Publication of WO2019155841A1 publication Critical patent/WO2019155841A1/ja
Anticipated expiration legal-status Critical
Priority to US18/096,518 priority patent/US11895415B2/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/20—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming only infrared radiation into image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1847—Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Definitions

  • a solid-state imaging device includes a photoelectric conversion film provided over a plurality of pixels, a first electrode that is electrically connected to the photoelectric conversion film and provided for each pixel, and a photoelectric conversion film A second electrode opposed to the first electrode, a first charge accumulation unit that accumulates signal charges generated by the photoelectric conversion film and moved through the first electrode, and is provided for each pixel.
  • a reset transistor that applies a reset potential to the charge storage portion; a period in which signal charges are stored in the first charge storage portion; And a potential generator for applying a potential VPD for reducing the potential difference between the two.
  • FIG. 12 is a timing chart for explaining a driving method of the pixel circuit shown in FIGS. 11A and 11B.
  • FIG. 12 is a diagram schematically illustrating another example of the pixel circuit illustrated in FIGS. 11A and 11B. It is a figure which represents typically the structure of the pixel circuit of the image pick-up element (readout pixel) which concerns on 4th Embodiment of this indication.
  • First embodiment an example of a solid-state imaging device having a potential generation unit connected in series to a reset transistor
  • Second embodiment an example of a solid-state imaging device having a potential generation unit connected in parallel to a reset transistor
  • Modification 1 (example having a capacitor switching transistor) 4).
  • Modification 2 (example with global shutter function) 5.
  • Third embodiment (an example of a solid-state imaging device having a potential generation unit connected in series to a first charge storage unit (FD)) 6).
  • Fourth embodiment an example of a solid-state imaging device having a potential generation unit including a transfer transistor and a second charge storage unit) 7).
  • Modification 3 Example of arrangement of readout pixels and non-readout pixels
  • Application examples (examples of electronic devices) 9.
  • Application examples (examples of electronic devices) 9.
  • FIG. 1 schematically illustrates an example of a functional configuration of a solid-state imaging device (imaging device 1) according to an embodiment of the present disclosure.
  • the imaging device 1 is an infrared image sensor, for example, and has sensitivity to light having a wavelength of 800 nm or more, for example.
  • the imaging device 1 is provided with, for example, a rectangular pixel region 10P and an outside pixel region 10B outside the pixel region 10P.
  • a peripheral circuit for driving the pixel region 10P is provided in the outside pixel region 10B.
  • the row scanning unit 201 includes a shift register, an address decoder, and the like, and is a pixel driving unit that drives each pixel P in the pixel region 10P, for example, in units of rows.
  • a signal output from each pixel P in the pixel row selected and scanned by the row scanning unit 201 is supplied to the horizontal selection unit 203 through each of the vertical signal lines Lsig.
  • the horizontal selection unit 203 is configured by an amplifier, a horizontal selection switch, and the like provided for each vertical signal line Lsig.
  • the column scanning unit 204 is configured by a shift register, an address decoder, and the like, and drives the horizontal selection switches in the horizontal selection unit 203 in order while scanning. By the selective scanning by the column scanning unit 204, the signal of each pixel transmitted through each of the vertical signal lines Lsig is sequentially output to the horizontal signal line 205, and is input to the signal processing unit (not shown) through the horizontal signal line 205.
  • the signal processing unit not shown
  • FIG. 4 shows a schematic cross-sectional configuration of the pixel region 10P of the image sensor 1 together with the pixel circuits 20Pr and 20Pn of the readout pixel Pr and the non-readout pixel Pn.
  • the imaging element 1 has, for example, a stacked structure of a semiconductor substrate having the photoelectric conversion unit 10 and a circuit substrate 20 having pixel circuits 20Pr and 20Pn.
  • the photoelectric conversion unit 10 is for photoelectrically converting incident light such as light having a wavelength in the infrared region for each pixel P.
  • the first electrode 11 and the first semiconductor layer are sequentially arranged from a position close to the circuit board 20. 12, the photoelectric conversion film 13, the second semiconductor layer 14, and the second electrode 15.
  • the second semiconductor layer 14 is provided in common to all the pixels P, for example.
  • the second semiconductor layer 14 is provided between and in contact with the photoelectric conversion film 13 and the second electrode 15.
  • the second semiconductor layer 14 is a region where charges discharged from the second electrode 15 move, and is made of, for example, a compound semiconductor containing n-type impurities.
  • n-type InP indium phosphide
  • the FD 21 signal charges generated in the photoelectric conversion unit 10 (photoelectric conversion film 13) are accumulated.
  • the FD 21 is connected to the source of the reset transistor 22 and the gate of the amplification transistor 24 together with the first electrode 11 of the photoelectric conversion unit 10.
  • the potential difference between the first electrode 11 and the second electrode 15 when the potential VPD is applied to the first electrode 11 is the first electrode 11 and the second electrode when the reset potential VRST is applied to the first electrode 11. (VPD ⁇ V 15
  • the gate of the amplification transistor 24 is connected to the FD 21, the drain of the amplification transistor 24 is connected to the power supply voltage VDD, and the source of the amplification transistor 24 is connected to the drain of the selection transistor 25.
  • the amplification transistor 24 constitutes a load MOS (MetalMetaOxide Semiconductor) as a constant current source and a source follower circuit connected via the vertical signal line Lsig.
  • a pixel signal corresponding to the potential of the FD 21 is output from the amplification transistor 24 to the horizontal selection unit 203 via the selection transistor 25.
  • FIG. 6 is a timing chart of the reset transistor 22, the selection transistor 25, and the potential generation unit 23 in a period (accumulation period T10) in which signal charges are accumulated in the FD 21 of the readout pixel Pr.
  • the potential generator 23 of the pixel circuits 20Pr and 20Pn generates a potential VPD.
  • the selection transistor 25 is turned on at time t1, and then turned off at time t2. From this time t2, the signal charge accumulation period T10 is started. Over the accumulation period T10, the pixel transistor 20Pr maintains the reset transistor 22 in the off state.
  • the on state of the reset transistor 22 and the off state of the selection transistor 25 are maintained at times t1 and t2. Thereby, in the accumulation period T10, the potential VPD is applied to the first electrode 11 of the non-read pixel Pn.
  • Transistor 27 is for switching the capacity of FD21.
  • the transistor 27 is connected in parallel to the reset transistor 22 between the photoelectric conversion unit 10 and the reset transistor 22.
  • the source of the transistor 27 is connected to the FD 21, and the drain of the transistor 27 is connected to one end of the additional capacitance element 28.
  • the other end of the additional capacitive element 28 is connected to, for example, a ground potential (GND).
  • GND ground potential
  • the reset transistor 22 is turned on.
  • the potential of the FD 21 becomes the reset potential VRST, and the FD 21 is in the initial state.
  • the reset transistor 22 of the pixel circuit 20Pr is turned off.
  • the transistor 29 of the pixel circuit 20Pr is kept on.
  • the off state of the reset transistor 22 and the off state of the transistor 29 are maintained.
  • the selection transistor 25 is turned on at time t1 and then turned off at time t2. From this time t2, the signal charge accumulation period T10 is started. Over the accumulation period T10, in the pixel circuit 20Pr, the reset transistor 22 is off, the selection transistor 25 is off, and the transistor 29 is on. On the other hand, in the pixel circuit 20Pn of the non-read pixel Pn, the reset transistor 22 is off, the selection transistor 25 is off, and the transistor 29 is off at times t1 and t2 and the accumulation period T10. Thereby, in the accumulation period T ⁇ b> 10, the first electrode 11 of the non-read pixel Pn has substantially the same potential as the second electrode 15. In other words, the potential VPD is applied to the first electrode 11 of the non-read pixel Pn.
  • FIG. 18 shows an example of the configuration of the control lines (control lines Lps1, Lps2) connected to the readout pixel Pr and the non-readout pixel Pn in FIG.
  • the image sensors 1, 1A, 1B, and 1C include, for example, a plurality of control lines Lps1 extending in the row direction and a plurality of control lines Lps2 extending in the column direction.
  • the technology (present technology) according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure may be applied to an endoscopic surgery system.
  • FIG. 23 is a block diagram illustrating an example of a schematic configuration of a patient in-vivo information acquisition system using a capsule endoscope to which the technique according to the present disclosure (present technique) can be applied.
  • the capsule endoscope 10100 is swallowed by the patient at the time of examination.
  • the capsule endoscope 10100 has an imaging function and a wireless communication function, and moves inside the organ such as the stomach and the intestine by peristaltic motion or the like until it is spontaneously discharged from the patient.
  • Images (hereinafter also referred to as in-vivo images) are sequentially captured at predetermined intervals, and information about the in-vivo images is sequentially wirelessly transmitted to the external control device 10200 outside the body.
  • an in-vivo image obtained by imaging the inside of the patient's body can be obtained at any time in this manner until the capsule endoscope 10100 is swallowed and discharged.
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure may be applied to an endoscopic surgery system.
  • the CCU 11201 is configured by a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and the like, and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Further, the CCU 11201 receives an image signal from the camera head 11102 and performs various kinds of image processing for displaying an image based on the image signal, such as development processing (demosaic processing), for example.
  • image processing for example, development processing (demosaic processing
  • the display device 11202 displays an image based on an image signal subjected to image processing by the CCU 11201 under the control of the CCU 11201.
  • the treatment instrument control device 11205 controls the drive of the energy treatment instrument 11112 for tissue ablation, incision, blood vessel sealing, or the like.
  • the pneumoperitoneum device 11206 passes gas into the body cavity via the pneumoperitoneum tube 11111.
  • the recorder 11207 is an apparatus capable of recording various types of information related to surgery.
  • the printer 11208 is a device that can print various types of information related to surgery in various formats such as text, images, or graphs.
  • the body tissue is irradiated with excitation light to observe fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally administered to the body tissue and applied to the body tissue. It is possible to obtain a fluorescence image by irradiating excitation light corresponding to the fluorescence wavelength of the reagent.
  • the light source device 11203 can be configured to be able to supply narrowband light and / or excitation light corresponding to such special light observation.
  • the camera head 11102 includes a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405.
  • the CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413.
  • the camera head 11102 and the CCU 11201 are connected to each other by a transmission cable 11400 so that they can communicate with each other.
  • the communication unit 11404 is configured by a communication device for transmitting and receiving various types of information to and from the CCU 11201.
  • the communication unit 11404 transmits the image signal obtained from the imaging unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.
  • the image processing unit 11412 performs various types of image processing on the image signal that is RAW data transmitted from the camera head 11102.
  • control unit 11413 causes the display device 11202 to display a picked-up image showing the surgical part or the like based on the image signal subjected to the image processing by the image processing unit 11412.
  • the control unit 11413 may recognize various objects in the captured image using various image recognition techniques.
  • the control unit 11413 detects surgical tools such as forceps, specific biological parts, bleeding, mist when using the energy treatment tool 11112, and the like by detecting the shape and color of the edge of the object included in the captured image. Can be recognized.
  • the control unit 11413 may display various types of surgery support information superimposed on the image of the surgical unit using the recognition result. Surgery support information is displayed in a superimposed manner and presented to the operator 11131, thereby reducing the burden on the operator 11131 and allowing the operator 11131 to proceed with surgery reliably.
  • the transmission cable 11400 for connecting the camera head 11102 and the CCU 11201 is an electric signal cable corresponding to electric signal communication, an optical fiber corresponding to optical communication, or a composite cable thereof.
  • the vehicle interior information detection unit 12040 detects vehicle interior information.
  • a driver state detection unit 12041 that detects a driver's state is connected to the in-vehicle information detection unit 12040.
  • the driver state detection unit 12041 includes, for example, a camera that images the driver, and the vehicle interior information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated or it may be determined whether the driver is asleep.
  • the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040. It is possible to perform cooperative control for the purpose of automatic driving that autonomously travels without depending on the operation.
  • the microcomputer 12051 can output a control command to the body system control unit 12020 based on information outside the vehicle acquired by the vehicle outside information detection unit 12030.
  • the microcomputer 12051 controls the headlamp according to the position of the preceding vehicle or the oncoming vehicle detected by the outside information detection unit 12030, and performs cooperative control for the purpose of anti-glare, such as switching from a high beam to a low beam. It can be carried out.
  • the sound image output unit 12052 transmits an output signal of at least one of sound and image to an output device capable of visually or audibly notifying information to a vehicle occupant or the outside of the vehicle.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are illustrated as output devices.
  • the display unit 12062 may include at least one of an on-board display and a head-up display, for example.
  • FIG. 27 is a diagram illustrating an example of an installation position of the imaging unit 12031.
  • the imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as a front nose, a side mirror, a rear bumper, a back door, and an upper part of a windshield in the vehicle interior of the vehicle 12100.
  • the imaging unit 12101 provided in the front nose and the imaging unit 12105 provided in the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100.
  • the imaging units 12102 and 12103 provided in the side mirror mainly acquire an image of the side of the vehicle 12100.
  • the imaging unit 12104 provided in the rear bumper or the back door mainly acquires an image behind the vehicle 12100.
  • the imaging unit 12105 provided on the upper part of the windshield in the passenger compartment is mainly used for detecting a preceding vehicle or a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 27 shows an example of the shooting range of the imaging units 12101 to 12104.
  • the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided in the front nose
  • the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided in the side mirrors, respectively
  • the imaging range 12114 The imaging range of the imaging part 12104 provided in the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, an overhead image when the vehicle 12100 is viewed from above is obtained.
  • the microcomputer 12051 converts the three-dimensional object data related to the three-dimensional object to other three-dimensional objects such as a two-wheeled vehicle, a normal vehicle, a large vehicle, a pedestrian, and a utility pole based on the distance information obtained from the imaging units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles.
  • the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see.
  • the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 is connected via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration or avoidance steering via the drive system control unit 12010, driving assistance for collision avoidance can be performed.
  • the technology according to the present disclosure can be applied to other fields such as the field of factory automation (FA).
  • FA field of factory automation
  • circuit configuration described in the above embodiment and the like is an example, and the configuration, arrangement, and the like are not limited to those described above.
  • the potential generation unit includes a second charge storage unit provided for each pixel between the first electrode and the first charge storage unit, and the second charge storage unit and the first charge storage unit.
  • a solid-state imaging device according to (1) including a second transistor provided therebetween.
  • the plurality of pixels are arranged along a first direction and a second direction intersecting the first direction, The solid-state imaging device according to (10), wherein the control line is provided along at least one of the first direction and the second direction.
  • a photoelectric conversion film provided over a plurality of pixels; A first electrode electrically connected to the photoelectric conversion film and provided for each pixel; A second electrode facing the first electrode with the photoelectric conversion film in between, A first charge accumulator that accumulates signal charges generated by the photoelectric conversion film and moved through the first electrode; A reset transistor that is provided for each pixel and applies a reset potential to the first charge storage unit; During the period in which the signal charge is accumulated in the first charge accumulation unit, the potential difference between the first electrode of at least some of the plurality of pixels and the second electrode is made smaller than the reset potential.
  • An image pickup apparatus having a solid-state image pickup device including a potential generation unit that applies a potential VPD.

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
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JP2019570639A JP7272969B2 (ja) 2018-02-07 2019-01-17 固体撮像素子および撮像装置
CN201980010831.8A CN111656769B (zh) 2018-02-07 2019-01-17 固体摄像器件和摄像装置
US16/966,130 US11595596B2 (en) 2018-02-07 2019-01-17 Solid-state image device and imaging apparatus
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US20230145375A1 (en) 2023-05-11
CN111656769A (zh) 2020-09-11
US20210029309A1 (en) 2021-01-28
KR102609647B1 (ko) 2023-12-05
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