CN116744130A - 固体摄像器件和摄像装置 - Google Patents
固体摄像器件和摄像装置 Download PDFInfo
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- CN116744130A CN116744130A CN202310531452.1A CN202310531452A CN116744130A CN 116744130 A CN116744130 A CN 116744130A CN 202310531452 A CN202310531452 A CN 202310531452A CN 116744130 A CN116744130 A CN 116744130A
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Classifications
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- H—ELECTRICITY
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- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/20—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming only infrared radiation into image signals
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
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- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
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- H04N25/53—Control of the integration time
- H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
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- H—ELECTRICITY
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
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- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
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- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
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- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
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- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
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- H10F39/184—Infrared image sensors
- H10F39/1847—Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018020098 | 2018-02-07 | ||
| JP2018-020098 | 2018-02-07 | ||
| JP2018034466 | 2018-02-28 | ||
| JP2018-034466 | 2018-02-28 | ||
| CN201980010831.8A CN111656769B (zh) | 2018-02-07 | 2019-01-17 | 固体摄像器件和摄像装置 |
| PCT/JP2019/001236 WO2019155841A1 (ja) | 2018-02-07 | 2019-01-17 | 固体撮像素子および撮像装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980010831.8A Division CN111656769B (zh) | 2018-02-07 | 2019-01-17 | 固体摄像器件和摄像装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116744130A true CN116744130A (zh) | 2023-09-12 |
Family
ID=67549599
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310531452.1A Pending CN116744130A (zh) | 2018-02-07 | 2019-01-17 | 固体摄像器件和摄像装置 |
| CN201980010831.8A Active CN111656769B (zh) | 2018-02-07 | 2019-01-17 | 固体摄像器件和摄像装置 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980010831.8A Active CN111656769B (zh) | 2018-02-07 | 2019-01-17 | 固体摄像器件和摄像装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11595596B2 (https=) |
| EP (1) | EP3751840B1 (https=) |
| JP (2) | JP7272969B2 (https=) |
| KR (1) | KR102609647B1 (https=) |
| CN (2) | CN116744130A (https=) |
| WO (1) | WO2019155841A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102609647B1 (ko) | 2018-02-07 | 2023-12-05 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 고체 촬상 소자 및 촬상 장치 |
| WO2019211968A1 (ja) * | 2018-05-02 | 2019-11-07 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子および撮像装置 |
| JP7486929B2 (ja) * | 2019-08-22 | 2024-05-20 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、測距装置 |
| JP7414569B2 (ja) * | 2020-02-12 | 2024-01-16 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
| WO2021240998A1 (ja) * | 2020-05-26 | 2021-12-02 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子 |
| JP2024075798A (ja) | 2021-03-22 | 2024-06-05 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
| JPWO2022208949A1 (https=) * | 2021-03-31 | 2022-10-06 | ||
| KR102890703B1 (ko) | 2021-06-08 | 2025-11-26 | 삼성전자주식회사 | 이미지 장치, 이미지 센서, 및 이미지 센서의 동작 방법 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5124369B2 (ja) * | 2008-07-03 | 2013-01-23 | 富士フイルム株式会社 | 撮像装置及び固体撮像素子の駆動方法 |
| US20120211642A1 (en) | 2009-10-27 | 2012-08-23 | Konica Minolta Opto, Inc. | Solid-State Imaging Device |
| WO2012164829A1 (ja) * | 2011-05-31 | 2012-12-06 | パナソニック株式会社 | 撮像装置 |
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| EP3751840B1 (en) | 2023-11-01 |
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| US11595596B2 (en) | 2023-02-28 |
| EP3751840A4 (en) | 2020-12-16 |
| CN111656769B (zh) | 2023-05-12 |
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