WO2019148680A1 - 微发光装置的键合治具、键合设备及其键合方法 - Google Patents

微发光装置的键合治具、键合设备及其键合方法 Download PDF

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Publication number
WO2019148680A1
WO2019148680A1 PCT/CN2018/085132 CN2018085132W WO2019148680A1 WO 2019148680 A1 WO2019148680 A1 WO 2019148680A1 CN 2018085132 W CN2018085132 W CN 2018085132W WO 2019148680 A1 WO2019148680 A1 WO 2019148680A1
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Prior art keywords
micro
light
emitting device
bonding
bonded
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PCT/CN2018/085132
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English (en)
French (fr)
Inventor
徐宸科
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厦门三安光电有限公司
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Publication of WO2019148680A1 publication Critical patent/WO2019148680A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75261—Laser
    • H01L2224/75262—Laser in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75302—Shape
    • H01L2224/7531—Shape of other parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/81224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present invention relates to the field of micro-light-emitting device packaging, and in particular to a bonding technology of a micro-light-emitting device.
  • Micro LED is a miniaturized LED array structure with self-luminous display characteristics, each point (pixel)
  • the Micro LED can address individual drive illumination, including high brightness, low power consumption, small size, ultra high resolution and color saturation.
  • the OLED technology which is also a self-luminous display
  • the Micro LED is not only efficient, but also has a long life.
  • the material is not easily affected by the environment and is relatively stable, and can also avoid image sticking.
  • the present invention discloses a bonding fixture for a micro-light-emitting device for bonding a plurality of to-be-bonded micro-light-emitting devices to a package substrate, including a plurality of porous plates, and a perforated plate.
  • the ejector pin is arranged to receive the ejector pin according to the point to be separated of the micro illuminating device to be bonded, and the thimble protrudes from the jig to be bonded to the micro illuminating device end, and the thimble is at the end of the micro illuminating device to be bonded and the micro illuminating device to be bonded
  • the contact end corresponding to the point to be separated, each thimble has an appropriate slope depending on the point to be separated.
  • the thimble is different according to the slope set by the point to be separated.
  • the oblique angle of the thimble with respect to the horizontal plane may be less than 90°, and the spacing between the points to be separated is larger. That is, in the case where the micro-light-emitting device is arranged loosely, the oblique angle of the thimble with respect to the horizontal plane may be greater than 90°.
  • the outer edge of the perforated plate of the perforated plate remote from the contact end has a position for accommodating the end of the thimble Hole, the thimble sticks out of the positioning hole.
  • the depth or position of the positioning hole depends on the slope of the thimble that is accommodated, so that the thimbles to be bonded to the end of the micro-light-emitting device have the same length of the needle.
  • the end portion comprises a plane, a curved surface or a spherical surface.
  • the present invention further provides a bonding device for a micro-light-emitting device, which is used for bonding a plurality of to-be-bonded micro-light-emitting devices to a package substrate, including the above-mentioned bonding fixture, and a key
  • the splicing tool is composed of at least a plurality of perforated plates, and the perforated plate is provided with perforations for accommodating the thimbles according to the points to be separated of the micro-light-emitting device to be bonded, and the thimbles are extended at the end of the micro-light-emitting device to be bonded, and the thimble is waiting
  • the bonding micro-light emitting device end is a contact end corresponding to the point to be separated of the micro-light-emitting device to be bonded, and each of the ejector pins has an appropriate slope according to the point to be separated.
  • each of the thimbles has a different inclination angle depending on the slope of the point to be separated.
  • the bonding apparatus has a plurality of sets of bonding jigs, and the bonding jigs can be replaced according to different inclination angles, and the replacement bonding jigs can be further adjusted in slope.
  • the perforated outer edge of the perforated plate remote from the contact end has a positioning hole for receiving the end of the ejector pin, and the thimble protrudes from the positioning hole.
  • the depth of the positioning hole depends on the slope of the thimble that is accommodated, so that the ejector pins to be bonded to the end of the micro-light-emitting device have the same length of the needle.
  • the bonding device can replace the bonding fixture, and can meet the bonding requirements of the micro-lighting device and the substrate with different pitches, without requiring multiple sets of different sizes of bonding. Equipment, increase production efficiency and reduce production costs.
  • a needle bed is provided remote from the contact end, the needle bed having a pogo pin that mates with the thimble.
  • one end of the pogo pin that matches the thimble is provided with a groove with an outer edge protruding and an inner recess.
  • the end portion includes a flat surface, a curved surface or a spherical surface, mainly for facilitating the transmission of pressure to the thimble by the spring needle of the needle bed.
  • the micro-light-emitting device to be bonded is located on the pedestal before bonding.
  • the pedestal comprises a blue film, a BCB glue, a silica gel, a resin, etc., which is suitable for fixing micro hair.
  • the material of the light device preferably, the pedestal comprises a blue film, a BCB glue, a silica gel, a resin, etc., which is suitable for fixing micro hair.
  • the present embodiment in order to speed up the bonding efficiency of the micro-light-emitting device and improve the bonding effect of the micro-light-emitting device and the package substrate, the present embodiment is provided with a laser generating device on the side of the package substrate, and the laser generating device is opposite to the package substrate. The laser light is irradiated to the area to be bonded corresponding to the upper micro light-emitting device.
  • the effect of laser illumination includes changing the physical or chemical state of the package substrate to facilitate micro-light device bonding.
  • the present invention provides a bonding method of a micro-light-emitting device for bonding a plurality of to-be-bonded micro-light-emitting devices to a package substrate, including the following steps. :
  • the bonding fixture is composed of at least a plurality of porous plates, and the perforated plate is provided with perforations for accommodating the micro-lighting according to the to-be-bonded a thimble disposed at a point to be separated from the device, wherein the thimble protrudes from the fixture to be bonded to the micro-light-emitting device, and the thimble is at a contact end of the micro-light-emitting device to be bonded to the point to be separated of the micro-light-emitting device to be bonded, each thimble Depending on the point to be separated, there is an appropriate slope;
  • the contact end of the thimble is brought into contact with the point to be separated of the micro-light-emitting device to be bonded, and the separation force from the pedestal and the bonding force bonded to the package substrate are applied to the micro-light-emitting device to be bonded.
  • the bonding method selectively bonds a plurality of gauge micro-lighting devices by setting a thimble state.
  • setting the thimble state includes setting the number of thimbles, the shape, the pitch, the length, or the tilt angle.
  • 1 to 2 are schematic views of a bonding fixture of the present invention
  • 3 to 4 are schematic diagrams showing bonding of a closely arranged micro-light-emitting device by a bonding apparatus according to the present invention
  • Figure 5 is a schematic view of a pogo pin of the present invention.
  • FIG. 6 is a schematic view showing the cooperation of a spring pin and a thimble according to the present invention.
  • FIG. 7 to FIG. 9 are schematic diagrams showing the bonding device selectively bonding the micro light-emitting device according to the present invention.
  • the drawings indicate: 100, perforated plate, 110, perforation, 120, positioning hole, 200, micro-lighting device, 210, red light micro-lighting device, 220, green light micro-lighting device, 230, blue light-emitting device, 300, thimble, 310, end, 400, base frame, 410, point to be separated, 500, substrate, 600, needle bed, 610, pogo pin.
  • the present invention provides a bonding fixture, which is mainly used for bonding a plurality of to-be-bonded micro-light-emitting devices to the package.
  • the micro-lighting device is mainly composed of micro light-emitting diodes.
  • a plurality of porous plates 100 are included, and the perforated plate 100 is provided with perforations 110 for accommodating according to the micro to be bonded.
  • the ejector pin 300 is disposed at a point where the illuminating device 200 is to be separated, and the ejector pin 300 protrudes from the fixture at the end of the micro-light-emitting device to be bonded.
  • the thimble 300 is at a position to be separated from the micro-light-emitting device 200 to be bonded to the point to be separated 410 of the micro-light-emitting device 200 to be bonded.
  • each thimble 300 has an appropriate slope according to the point to be separated 410, that is, the thimble has an oblique angle oc.
  • the outer edge of the perforated plate 110 away from the contact end has a positioning hole 120 for receiving the ejector end 310.
  • the thimble 300 protrudes from the positioning hole 120, and the end portion 310 functions to withstand pressure.
  • the portion 310 conducts pressure to the thimble 300, and the thimble 300 provides a separation force from the 400 pedestal to the micro-lighting device 200.
  • the depth or position of the positioning hole 120 may be determined according to the slope of the thimble 300, so that the thimble 300 to be bonded to the micro-light emitting device end has the same needle length, and the same needle length can be preferably the same.
  • the horizontal micro-lighting device 200 transmits the force required for bonding.
  • the ejector end portion 310 of the bonding jig includes a shape such as a flat surface, a curved surface or a spherical surface to facilitate stable reception and transmission of force, and the present invention preferably adopts a spherical end portion.
  • the present embodiment proposes another modification based on the technical solution that the ejector pin 300 and the perforated plate 100 are separably designed.
  • one end of all the thimbles 300 is fixed.
  • the bonding jig of the present embodiment can apply force to the ejector pin 300 only by the force of the perforated plate 100, and can also prevent the work efficiency caused by the excessively scattered parts from being low.
  • the thimble 300 is different according to the slope of the point to be separated 410.
  • the oblique angle ot of the thimble 300 with respect to the horizontal plane may be smaller than [0045] 90 °, and in the case where the distance between the points to be separated 410 is large and the arrangement of the micro-light-emitting device 200 is loose, the oblique angle oc of the ejector pin 300 with respect to the horizontal plane may be greater than 90°, that is, the present invention may be arranged according to the row of the micro-light-emitting device 200. In the case of cloth, set different thimble angles.
  • the present invention applies the above-mentioned bonding jig to a bonding device
  • the bonding device includes the above-mentioned bonding jig
  • the bonding device can have a plurality of sets of bonding jigs for replacement, and the bonding jig can pass
  • the perforated plate 100 is fixed in the bonding apparatus, and can also be connected to the bonding apparatus by other conventional techniques.
  • the bonding fixture is composed of at least a plurality of perforated plates 100, and the perforated plate 100 is provided with perforations 110 for accommodating a thimble according to a point to be separated 410 to be bonded to the micro-light-emitting device, the thimble is to be bonded
  • the micro-light emitting device end protrudes from the jig, and the thimble 300 is at the end of the micro-light-emitting device to be bonded to the point to be separated 41 to be bonded to the micro-light-emitting device.
  • the corresponding contact end of 0, each thimble 300 has an appropriate slope depending on the point to be separated 410.
  • each of the thimbles 300 has a different inclination angle a depending on the slope of the point to be separated 410 having a different inclination.
  • the bonding device has a plurality of sets of bonding jigs, and the bonding jig can be replaced according to the inclination angle 0 [ the same, and the replacement bonding jig can also perform the slope adjustment.
  • the bonding device adopts a replaceable bonding jig to meet the bonding requirements of the micro-light emitting device 200 and the substrate 500 at different pitches, and the process of fabricating the micro-light-emitting device In this case, multiple sets of bonding equipment of different sizes are not required, which improves production efficiency and reduces production cost.
  • the outer edge of the perforated plate perforation 110 away from the contact end has a locating hole 120 that receives an end of the thimble, and the thimble 300 extends from the locating hole 120.
  • the depth or position of the positioning hole 120 depends on the slope of the thimble that is accommodated, so that the thimble 300 to be bonded to the micro-light emitting device end has the same needle length.
  • the needle bed 600 is disposed away from the contact end, and the needle bed 600 has a spring pin 610 that matches the thimble 300.
  • the design of the spring pin 610 serves as a buffer to avoid rigidity with the micro-lighting device 200. Collision causes damage to the micro-lighting device 200.
  • the micro-light-emitting device to be bonded is placed on the pedestal 400 before bonding.
  • the pedestal 400 serves as a carrier for the micro-light-emitting device 200 to be bonded, and the material mainly includes a blue film, a BCB glue, a silica gel, a resin, and the like to facilitate fixing the micro-light-emitting device 200.
  • the present invention provides an embodiment.
  • the present embodiment in order to speed up the bonding efficiency of the micro-light-emitting device and improve the bonding effect of the micro-light-emitting device 200 and the package substrate 500, the present embodiment is packaged.
  • a laser generating device is disposed on the substrate 500 side, and the laser generating device performs laser irradiation on the to-be-bonded region corresponding to the micro-light emitting device 200 on the package substrate 500.
  • the effect of laser illumination includes changing the physical or chemical state of the package substrate 500 to facilitate bonding of the micro-lighting device 200. Other heating methods can also be employed as an alternative to the laser according to this embodiment.
  • the present invention provides a bonding method of a micro-light-emitting device for bonding a plurality of to-be-bonded micro-light-emitting devices 200 to a package substrate 500, including the above-described bonding fixture and bonding device, including The following steps:
  • a plurality of to-be-bonded micro-light-emitting devices 200 fixed on the pedestal 400 and a bonding fixture corresponding to the distribution pitch of the micro-light-emitting device 200 to be bonded to the pedestal 400 are provided, and the bonding fixture is at least Several perforated plates 100, the perforated plate 100 is provided with a perforation 110 for accommodating the ejector pin 300 according to the point to be separated 410 to be bonded to the micro-light-emitting device, the thimble 300 is extended at the end of the micro-light-emitting device to be bonded, and the thimble 300 is to be bonded.
  • the micro-light-emitting device end is a contact end corresponding to the point to be separated 410 to be bonded to the micro-light-emitting device, and each of the ejector pins has an appropriate slope according to the point to be separated 410;
  • the contact end of the thimble 300 is in contact with the point to be separated 410 to be bonded to the micro-light-emitting device, and the separation force from the pedestal 400 and the bonding force to the package substrate 500 are applied to the micro-light-emitting device 200 to be bonded. .
  • these embodiments utilize a needle bed 600 having a pogo pin 610 that mates with a thimble 300 to apply pressure to the thimble 300, the spring pin 610 having a corresponding design with the thimble 300 contact end, preferably better Conducting the pressure, the thimble 300 separates and bonds the micro-light emitting device 200 from the pedestal 400 to the package substrate 500 by pressure.
  • a pogo pin 610 that mates with a thimble 300 to apply pressure to the thimble 300
  • the spring pin 610 having a corresponding design with the thimble 300 contact end, preferably better Conducting the pressure
  • the thimble 300 separates and bonds the micro-light emitting device 200 from the pedestal 400 to the package substrate 500 by pressure.
  • other pressure mechanisms can also be selected to apply force to the thimble 300.
  • the shape of the end portion 310 includes a flat surface, a curved surface or a spherical surface, mainly for facilitating the transfer of pressure to the thimble 300 by the pogo pin 610 of the needle bed 600.
  • the pogo pin 610 mates with the end portion 310 to correspond to a corresponding pogo pin portion having a recessed recess.
  • the outer edge of the recess is designed to be toothed or otherwise convex. In order to better match the end portion 310, it is ensured that the thimble 300 can be well interfaced with the pogo pin 610 regardless of the size of the slanting angle of the thimble 300.
  • the package substrate 500 corresponding to the micro-light-emitting device 200 is subjected to laser irradiation at a bonding position, and the laser irradiation mainly functions as a fast bonding process, for example, an electrode of the micro-light-emitting device 200.
  • the metal contact portion of the package substrate is subjected to laser heating, and is more suitable for a micro device bonding process such as a micro light-emitting device with respect to other heating methods.
  • the bonding fixture and the bonding device of the present invention provide The solution for solving the above requirements can achieve the purpose of transferring the micro-lighting device 200 of the target batch by the thimble 300 by retaining only the corresponding pitch and number of the ejector pins 300 in the bonding fixture, or by adjusting the ejector angle.
  • the micro-light-emitting devices of the respective wavelengths are bonded to the package substrate 500 in batches by adjusting the bonding jig or the plurality of sets of bonding jigs.
  • providing red light micro hair The pedestal 400 of the optical device 210 firstly bonds the red light micro-light-emitting device 210 selected on the pedestal 400 by the target pitch to the package substrate 500 by using the bonding device, and then uses the bonding device according to a similar scheme.
  • the green light micro-light-emitting device 220 and the blue light-emitting device 230 are bonded to the package substrate 500, thereby bonding a matrix of micro-light-emitting devices composed of three elements of RGB red, green and blue on the package substrate 500.
  • the bonding fixtures and bonding devices of the present invention are also suitable for other selective bonding or bonding applications of different pitch micro-lighting devices.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

本发明有关一种微发光装置的键合治具及其键合方法，其主要由若干块多孔板构成，各多孔板设有穿孔以容置依据待键合微发光装置待分离点设置的顶针，顶针两端凸伸出治具，其在待键合微发光装置端，为与待键合微发光装置的待分离点对应的接触端，而在针床端，则为与针床的弹簧针接触的接触端，各顶针依据待分离点具有适当的斜率，该针床端的多孔板穿孔外缘具有容设顶针端部的定位孔，且该定位孔深度依据所容置顶针的斜率大小而定，使待键合微发光装置端的顶针具有相同出针长度，具有提高键合治具的稳定性，避免微发光装置键合排列不齐的效果。

Description

说明书 发明名称 :微发光装置的键合治具、 键合设备及其键合方法 技术领域
[0001] 本发明涉及微发光装置封装领域， 具体涉及微发光装置的键合技术。
背景技术
[0002] Micro LED为微型化 LED数组结构， 具有自发光显示特性， 每一点划素 （pixel
） 都能寻址化单独驱动发光， 优点包括高亮度、 低功耗、 体积较小、 超高分辨 率与色彩饱和度等。 相较于同为自发光显示的 OLED技术， Micro LED不仅效率 较高、 寿命较长， 材料不易受到环境影响而相对稳定， 也能避免产生残影现象
[0003] 由于 Micro LED芯粒之间的间距比较接近， 造成封装固晶键合难度上升， 现有 的键合设备效率低， 无法满足日趋增大的生产需求。
发明概述
技术问题
问题的解决方案
技术解决方案
[0004] 为解决背景技术中的问题， 本发明的主要目的在于提供一种微发光装置的键合 治具能快速的完成微发光装置的键合。
[0005] 为达到上述目的， 本发明公开了一种微发光装置的键合治具， 用于将复数个待 键合微发光装置键合到封装基板上， 包括若干块多孔板， 多孔板设有穿孔以容 置依据待键合微发光装置待分离点设置的顶针， 顶针在待键合微发光装置端伸 出治具， 顶针在待键合微发光装置端为与待键合微发光装置的待分离点对应的 接触端， 各顶针依据待分离点具有适当的斜率。
[0006] 顶针依据待分离点设置的斜率不同， 在待分离点间距较小即微发光装置紧密排 布的情况下， 顶针相对于水平面的斜角可以小于 90°， 在待分离点间距较大即微 发光装置排布较疏松的情况下， 顶针相对于水平面的斜角可以大于 90°。
[0007] 根据本发明， 优选的， 远离接触端的多孔板穿孔外缘具有容设顶针端部的定位 孔， 顶针从定位孔伸出。
[0008] 根据本发明， 优选的， 定位孔深度或位置依据所容置顶针的斜率大小而定， 使 待键合微发光装置端的顶针具有相同出针长度。
[0009] 根据本发明， 优选的， 端部包括平面、 曲面或球面。
[0010] 为了满足生产需求， 本发明还提供了一种微发光装置的键合设备， 用于将复数 个待键合微发光装置键合到封装基板上， 包括了上述键合治具， 键合治具至少 由若干块多孔板组成， 多孔板设有穿孔以容置依据待键合微发光装置待分离点 设置的顶针， 顶针在待键合微发光装置端伸出治具， 顶针在待键合微发光装置 端为与待键合微发光装置的待分离点对应的接触端， 各顶针依据待分离点具有 适当的斜率。
[0011] 根据本发明， 优选的， 各顶针依据待分离点具有的斜率不同， 则顶针具有不同 的倾斜角度。
[0012] 根据本发明， 优选的， 键合设备具有若干套键合治具， 键合治具根据倾斜角度 的不同， 可以替换使用， 替换下来的键合治具也可以再进行斜率调整。
[0013] 根据本发明， 优选的， 远离接触端的多孔板穿孔外缘具有容设顶针端部的定位 孔， 顶针从定位孔伸出。
[0014] 根据本发明， 优选的， 定位孔深度依据所容置顶针的斜率大小而定， 使待键合 微发光装置端的顶针具有相同出针长度。 基于上述技术方案， 本发明的技术效 果之一， 键合设备采用可以替换键合治具， 用以满足不同间距的微发光装置与 基板的键合需求， 而不需要多套不同尺寸的键合设备， 提高生产效率、 降低生 产成本。
[0015] 在一些实施例中， 远离接触端设置有针床， 针床具有与顶针匹配的弹簧针。
[0016] 根据本实施例， 优选的， 弹簧针与顶针匹配的一端设有外缘凸出、 内部内陷的 凹槽。
[0017] 根据本实施例， 优选的， 端部包括平面、 曲面或球面， 主要为了有利于针床的 弹簧针向顶针传递压力。
[0018] 根据本实施例， 优选的， 待键合微发光装置键合前位于基架上。
[0019] 根据本实施例， 优选的， 基架包括蓝膜、 BCB胶、 硅胶、 树脂等利于固定微发 光装置的材料。
[0020] 在一些实施例中， 为了加快微发光装置键合效率， 提高微发光装置和封装基板 的键合效果， 本实施例在封装基板一侧设置有激光发生装置， 激光发生装置对 封装基板上微发光装置对应的待键合区域进行激光照射。
[0021] 根据这些实施例， 激光照射的作用包括改变封装基板物理态或化学态， 从而利 于微发光装置键合。
[0022] 基于上述的键合治具及键合设备， 本发明提供了一种微发光装置的键合方法， 用于将复数个待键合微发光装置键合到封装基板上， 包括以下步骤：
[0023] 提供固定在基架上的复数个待键合微发光装置以及键合治具， 键合治具至少由 若干块多孔板组成， 多孔板设有穿孔以容置依据待键合微发光装置待分离点设 置的顶针， 顶针在待键合微发光装置端伸出治具， 顶针在待键合微发光装置端 为与待键合微发光装置的待分离点对应的接触端， 各顶针依据待分离点具有适 当的斜率；
[0024] 利于顶针的接触端与待键合微发光装置的待分离点接触， 并向待键合微发光装 置施加与基架的分离力以及键合到封装基板的键合力。
[0025] 在该键合方法中， 对微发光装置对应的封装基板待键合位置进行激光照射。
[0026] 在一些实施方式中， 键合方法通过设定顶针状态对若干规格的微发光装置进行 选择性的键合。
[0027] 根据该实施方式， 设定顶针状态包括设定顶针数量、 形状、 间距、 长度或者倾 斜角度。
发明的有益效果
有益效果
[0028] 本发明的其它特征和优点将在随后的说明书中阐述， 并且， 部分地从说明书中 变得显而易见， 或者通过实施本发明而了解。 本发明的目的和其他优点可通过 在说明书、 权利要求书以及附图中所特别指出的结构来实现和获得。
对附图的简要说明
附图说明
[0029] 附图用来提供对本发明的进一步理解， 并且构成说明书的一部分， 与本发明的 实施例一起用于解释本发明， 并不构成对本发明的限制。 此外， 附图数据是描 述概要， 不是按比例绘制。
[0030] 图 1~2为本发明的键合治具示意图；
[0031] 图 3~4为本发明的键合设备对排列较紧密的微发光装置进行键合的示意图；
[0032] 图 5为本发明的一种弹簧针的示意图；
[0033] 图 6为本发明弹簧针与顶针的配合示意图；
[0034] 图 7~图9为本发明的键合设备选择性地对微发光装置进行键合的示意图；
[0035] 附图标示： 100、 多孔板， 110、 穿孔， 120、 定位孔， 200、 微发光装置， 210 、 红光微发光装置， 220、 绿光微发光装置， 230、 蓝光微发光装置， 300、 顶针 ， 310、 端部， 400、 基架， 410、 待分离点， 500、 基板， 600、 针床， 610、 弹 簧针。
发明实施例
本发明的实施方式
[0036] 下面便结合附图对本发明若干具体实施例作进一步的详细说明。 但以下关于实 施例的描述及说明对本发明保护范围不构成任何限制。
[0037] 应当理解， 本发明所使用的术语仅出于描述具体实施方式的目的， 而不是旨在 限制本发明。 进一步理解， 当在本发明中使用术语“包含”、 ”包括’’时， 用于表明 陈述的特征、 整体、 步骤、 组件、 和 /或封装件的存在， 而不排除一个或多个其 他特征、 整体、 步骤、 组件、 封装件、 和 /或它们的组合的存在或增加。
[0038] 除另有定义之外， 本发明所使用的所有术语 （包括技术术语和科学术语） 具有 与本发明所属领域的普通技术人员通常所理解的含义相同的含义。 应进一步理 解， 本发明所使用的术语应被理解为具有与这些术语在本说明书的上下文和相 关领域中的含义一致的含义， 并且不应以理想化或过于正式的意义来理解， 除 本发明中明确如此定义之外。
[0039] 由于微发光装置排布紧密， 现有设备难以高效地对其进行键合工艺， 本发明提 供一种键合治具， 主要用于将复数个待键合微发光装置键合到封装基板上， 微 发光装置主要是由微发光二极管组成的。
[0040] 参看图 1， 包括若干块多孔板 100, 多孔板 100设有穿孔 110以容置依据待键合微 发光装置 200待分离点设置的顶针 300, 顶针 300在待键合微发光装置端伸出治具 ， 顶针 300在待键合微发光装置端为与待键合微发光装置 200的待分离点 410对应 的接触端， 通过调整多孔板 100的穿孔 110位置设置以及多孔板 100之间不同的间 距， 实现各顶针 300依据待分离点 410具有适当的斜率， 即顶针具有斜角 oc。
[0041] 在本发明中， 远离接触端的多孔板穿孔 110外缘具有容设顶针端部 310的定位孔 120, 顶针 300从定位孔 120伸出， 端部 310起到承受压力的作用， 通过端部 310将 压力传导给顶针 300, 再通过顶针 300向微发光装置 200提供与 400基架分离的分 离力。
[0042] 定位孔 120深度或位置皆可以依据所容置顶针 300的斜率大小而定， 使待键合微 发光装置端的顶针 300具有相同出针长度， 相同出针长度， 可以较佳地向同一水 平面微发光装置 200传递键合所需的作用力。
[0043] 该键合治具的顶针端部 310包括平面、 曲面或球面等有利于稳定地接收、 传递 作用力的形状， 本发明优选采用为球状端部。
[0044] 在一些实施例中， 本实施例在前述主要采取顶针 300与多孔板 100可分离设计的 技术方案的基础上提出另一种变形方案， 在本实施例中将所有顶针 300的一端固 定在多孔板 100上， 本实施例的键合治具仅通过多孔板 100受力既可以向顶针 300 施加作用力， 也可以避免部件过于零散导致的工作效率偏低。
[0045] 参看图 2， 顶针 300依据待分离点 410设置的斜率不同， 在待分离点 410间距较小 即微发光装置 200紧密排布的情况下， 顶针 300相对于水平面的斜角 ot可以小于 90 °， 而在待分离点 410间距较大、 微发光装置 200排布较疏松的情况下， 顶针 300相 对于水平面的斜角 oc可以大于 90°， 即本发明可以根据微发光装置 200的排布情况 ， 设置不同的顶针斜角。
[0046] 本发明将上述键合治具应用到键合设备中， 键合设备包括了上述键合治具， 键 合设备可以具有多套替换使用的键合治具， 键合治具可以通过多孔板 100固定在 键合设备中， 也可以通过其他常规技术手段与键合设备连接。
[0047] 参看图 3， 键合治具至少由若干块多孔板 100组成， 多孔板 100设有穿孔 110以容 置依据待键合微发光装置待分离点 410设置的顶针， 顶针在待键合微发光装置端 伸出治具， 顶针 300在待键合微发光装置端为与待键合微发光装置的待分离点 41 0对应的接触端， 各顶针 300依据待分离点 410具有适当的斜率。
[0048] 在该键合设备中， 各顶针 300依据待分离点 410具有的斜率不同， 则顶针 300具 有不同的倾斜斜角 a。
[0049] 键合设备具有的若干套键合治具， 键合治具根据倾斜斜角0[的不同， 可以替换 使用， 替换下来的键合治具也可以再进行斜率调整。 基于上述技术方案， 作为 本发明的技术效果之一， 键合设备采用可以替换的键合治具， 用以满足不同间 距的微发光装置 200与基板 500的键合需求， 在制作微发光装置过程中， 不需要 多套不同尺寸的键合设备， 提高生产效率、 降低生产成本。
[0050] 在本发明的一些实施方式中， 远离接触端的多孔板穿孔 110外缘具有容设顶针 端部的定位孔 120， 顶针 300从定位孔 120伸出。
[0051] 定位孔 120深度或位置依据所容置顶针的斜率大小而定， 使待键合微发光装置 端的顶针 300具有相同出针长度。
[0052] 在一些实施例中， 远离接触端设置有针床 600， 针床 600具有与顶针 300匹配的 弹簧针 610, 弹簧针 610的设计起到一定的缓冲作用， 避免与微发光装置 200刚性 碰撞， 造成微发光装置 200的损坏。
[0053] 待键合微发光装置 200键合前位于基架 400上。 基架 400作为待键合微发光装置 2 00的承载体， 材料主要包括蓝膜、 BCB胶、 硅胶、 树脂等利于固定微发光装置 2 00的材料。
[0054] 参看图 4, 本发明提出了一种实施例， 在本实施例中， 为了加快微发光装置键 合效率， 提高微发光装置 200和封装基板 500的键合效果， 本实施例在封装基板 5 00—侧设置有激光发生装置， 激光发生装置对封装基板 500上微发光装置 200对 应的待键合区域进行激光照射。 激光照射的作用包括改变封装基板 500的物理态 或化学态， 从而利于微发光装置 200键合。 根据该实施例也可以采用其他加热方 式作为激光的替代手段。
[0055] 基于上述的键合治具及键合设备， 本发明提供了一种微发光装置的键合方法， 用于将复数个待键合微发光装置 200键合到封装基板 500上， 包括以下步骤：
[0056] 首先， 提供固定在基架 400上的复数个待键合微发光装置 200以及与基架 400上 待键合微发光装置 200分布间距对应的键合治具， 键合治具至少由若干块多孔板 100组成， 多孔板 100设有穿孔 110以容置依据待键合微发光装置待分离点 410设 置的顶针 300, 顶针 300在待键合微发光装置端伸出治具， 顶针 300在待键合微发 光装置端为与待键合微发光装置的待分离点 410对应的接触端， 各顶针依据待分 离点具 410有适当的斜率；
[0057] 利于顶针 300的接触端与待键合微发光装置的待分离点 410接触， 并向待键合微 发光装置 200施加与基架 400的分离力以及键合到封装基板 500的键合力。
[0058] 在一些实施例中， 这些实施例利用具有与顶针 300匹配的弹簧针 610的针床 600 向顶针 300施加压力， 弹簧针 610与顶针 300接触端端部具有对应设计， 以更佳地 传导压力， 顶针 300通过压力将微发光装置 200从基架 400上分离并键合到封装基 板 500上。 当然根据实际情况， 也可以选择其他压力机构对顶针 300施加作用力
[0059] 参看图 5和图 6， 端部 310的形状包括平面、 曲面或球面， 主要为了有利于针床 6 00的弹簧针 610向顶针 300传递压力。
[0060] 在一些实施例中， 弹簧针 610与端部 310匹配对应的弹簧针针头部分具有内陷的 凹槽， 在该些实施例的基础上， 凹槽外缘设计为齿状或者其他凸状， 以更好地 与端部 310进行匹配， 保证无论顶针 300的具有怎样大小倾斜斜角， 都可以良好 地与弹簧针 610对接。
[0061] 在上述的键合方法中， 对微发光装置 200对应的封装基板 500待键合位置进行激 光照射， 激光照射主要起到快捷键合进程的作用， 例如对微发光装置 200的电极 与封装基板的金属接触部进行激光加热， 相对于其他加热方式更适合于微发光 装置等的微器件键合工艺。
[0062] 在显示器的微发光装置应用键合中， 惯常需要分别将多种波长的微发光装置 20 0分批次键合到封装基板 500上， 本发明的键合治具与键合设备提供解决上述需 求的方案， 可以通过在键合治具仅保留对应间距与数量的顶针 300, 或者也可以 通过调整顶针角度， 用以实现顶针 300对目标批次的微发光装置 200进行转移的 目的。
[0063] 参看图 7~图9 , 再通过调整键合治具或多组键合治具配合的方式分批次将各波 长的微发光装置键合到封装基板 500上。 在一种具体实例中， 提供承载红光微发 光装置 210的基架 400, 利用键合设备先将基架 400上全部或者部分依据目标间距 选取的红光微发光装置 210键合到封装基板 500上、 再利用键合设备依照类似方 案分别将绿光微发光装置 220和蓝光微发光装置 230键合到封装基板 500上， 从而 在封装基板 500上键合 RGB红绿蓝三元素组成的微发光装置矩阵。 除了应用在具 有波长变化的微发光装置组合， 本发明的键合治具、 键合设备也适合于其他选 择性键合或者不同间距微发光装置键合的应用。
[0064] 以上所述仅是本发明的优选实施方式， 应当指出， 对于本技术领域的技术人员 ， 在不脱离本发明原理的前提下， 还可以做出若干改进和润饰， 这些改进和润 饰也应视为本发明的保护范围。

Claims

权利要求书
[权利要求 1] 微发光装置的键合治具， 用于将复数个待键合微发光装置键合到封装 基板上， 其特征在于： 包括若干块多孔板， 多孔板设有穿孔以容置依 据待键合微发光装置待分离点设置的顶针， 顶针在待键合微发光装置 端伸出治具， 顶针在待键合微发光装置端为与待键合微发光装置的待 分离点对应的接触端， 各顶针依据待分离点具有适当的斜率。
[权利要求 2] 根据权利要求 i所述的微发光装置的键合治具， 其特征在于： 各顶针 依据待分离点具有不同的斜率， 则顶针具有不同的倾斜角度。
[权利要求 3] 根据权利要求 i所述的微发光装置的键合治具， 其特征在于： 远离接 触端的多孔板穿孔外缘具有容设顶针端部的定位孔， 顶针从定位孔伸 出。
[权利要求 4] 根据权利要求 3所述的微发光装置的键合治具， 其特征在于： 定位孔 深度或位置依据所容置顶针的斜率大小而定， 使待键合微发光装置端 的顶针具有相同出针长度。
[权利要求 5] 根据权利要求 3所述的微发光装置的键合治具， 其特征在于： 端部包 括平面、 曲面或球面。
[权利要求 6] 微发光装置的键合设备， 用于将复数个待键合微发光装置键合到封装 基板上， 其特征在于， 包括键合治具， 键合治具至少由若干块多孔板 组成， 多孔板设有穿孔以容置依据待键合微发光装置待分离点设置的 顶针， 顶针在待键合微发光装置端伸出治具， 顶针在待键合微发光装 置端为与待键合微发光装置的待分离点对应的接触端， 各顶针依据待 分离点具有适当的斜率。
[权利要求 7] 根据权利要求 6所述的微发光装置的键合设备， 其特征在于： 各顶针 依据待分离点具有的斜率不同， 则顶针具有不同的倾斜角度。
[权利要求 8] 根据权利要求 6所述的微发光装置的键合设备， 其特征在于： 键合设 备具有若干套键合治具。
[权利要求 9] 根据权利要求 6所述的微发光装置的键合设备， 其特征在于： 远离接 触端的多孔板穿孔外缘具有容设顶针端部的定位孔， 顶针从定位孔伸 出。
[权利要求 10] 根据权利要求 9所述的微发光装置的键合设备， 其特征在于： 定位孔 深度或位置依据所容置顶针的斜率大小而定， 使待键合微发光装置端 的顶针具有相同出针长度。
[权利要求 11] 根据权利要求 9所述的微发光装置的键合设备， 其特征在于： 远离接 触端设置有针床， 针床具有与顶针匹配的弹簧针。
[权利要求 12] 根据权利要求 11所述的微发光装置的键合设备， 其特征在于： 弹簧针 与顶针匹配的一端设有外缘凸出、 内部内陷的凹槽。
[权利要求 13] 根据权利要求 9所述的微发光装置的键合设备， 其特征在于： 端部包 括平面、 曲面或球面。
[权利要求 14] 根据权利要求 6所述的微发光装置的键合设备， 其特征在于： 待键合 微发光装置键合前位于基架上。
[权利要求 15] 根据权利要求 14所述的微发光装置的键合设备， 其特征在于： 基架包 括蓝膜、 BCB胶、 硅胶、 树脂。
[权利要求 16] 根据权利要求 6所述的微发光装置的键合设备， 其特征在于： 封装基 板一侧设置有激光发生装置， 激光发生装置对封装基板上微发光装置 对应的待键合区域进行激光照射。
[权利要求 17] 根据权利要求 16所述的微发光装置的键合设备， 其特征在于： 激光照 射的作用包括改变封装基板物理态或化学态， 从而利于微发光装置键 合。
[权利要求 18] 一种微发光装置的键合方法， 用于将复数个待键合微发光装置键合到 封装基板上， 包括以下步骤：
提供固定在基架上的复数个待键合微发光装置以及键合治具， 键合治 具至少由若干块多孔板组成， 多孔板设有穿孔以容置依据待键合微发 光装置待分离点设置的顶针， 顶针在待键合微发光装置端伸出治具， 顶针在待键合微发光装置端为与待键合微发光装置的待分离点对应的 接触端， 各顶针依据待分离点具有适当的斜率； 利于顶针的接触端与待键合微发光装置的待分离点接触， 并向待键合 微发光装置施加与基架的分离力以及键合到封装基板的键合力。
[权利要求 19] 根据权利要求 18所述的一种微发光装置的键合方法， 其特征在于： 在 步骤 （2） 分离时， 对微发光装置对应的封装基板待键合位置进行激 光照射。
[权利要求 20] 根据权利要求 18所述的一种微发光装置的键合方法， 其特征在于： 键 合方法通过设定顶针状态对若干规格的微发光装置进行选择性的键合
[权利要求 21] 根据权利要求 20所述的一种微发光装置的键合方法， 其特征在于： 设 定顶针状态包括设定顶针数量、 形状、 间距、 长度或者倾斜角度。
PCT/CN2018/085132 2018-02-02 2018-04-28 微发光装置的键合治具、键合设备及其键合方法 WO2019148680A1 (zh)

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