WO2019218551A1 - Micro LED显示面板的制作方法 - Google Patents

Micro LED显示面板的制作方法 Download PDF

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Publication number
WO2019218551A1
WO2019218551A1 PCT/CN2018/105590 CN2018105590W WO2019218551A1 WO 2019218551 A1 WO2019218551 A1 WO 2019218551A1 CN 2018105590 W CN2018105590 W CN 2018105590W WO 2019218551 A1 WO2019218551 A1 WO 2019218551A1
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micro led
forming
layer
display panel
pixel electrode
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PCT/CN2018/105590
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English (en)
French (fr)
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陈黎暄
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深圳市华星光电技术有限公司
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Priority to US16/091,250 priority Critical patent/US10741608B2/en
Publication of WO2019218551A1 publication Critical patent/WO2019218551A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a Micro LED display panel.
  • Micro LED LED miniaturization and matrixing, refers to high-density, tiny-sized LED arrays that are integrated on a single chip.
  • Micro LEDs consume far less power than liquid crystal displays (LCDs), and are self-illuminating like organic light-emitting diodes (OLEDs), which can reduce the distance between pixels from millimeters to micrometers. The color saturation is close to OLED, so many manufacturers regard Micro LED as the next generation display technology.
  • a micro LED array is fabricated by a micro transfer printing method: after the LED bare chip (Bare Chip) is separated from the sapphire substrate by laser lift-off (LLO) technology, a The patterned transfer layer adsorbs the LED bare chip from the supply substrate and transfers it to the receiving substrate.
  • the receiving substrate is a silicon substrate in which the circuit pattern has been prepared in advance, and by aligning the transfer substrate and the receiving substrate, the bare LED chip adsorbed on the transfer substrate is attached to the matching position of the receiving substrate, and then stripped and transferred.
  • the substrate can complete the transfer of the LED bare chip.
  • Patents such as US 2013/0210194, US 2013/0128585 and the like have a more detailed description of the micro transfer technology.
  • the size of the prior art Micro LEDs is much smaller than existing pixel sizes.
  • the length and width of the sub-pixels are about 600 ⁇ m and 200 ⁇ m, respectively, while the size of the Micro LED is about 10 to 50 ⁇ m, which results in a large surrounding of the Micro LED.
  • the area is not glowing. Since the light emitted by the Micro LED is in all directions, there is more light energy loss in the non-display direction, and the utilization rate of the light source is lower.
  • the prior art proposes a technical solution for fabricating a groove structure on a substrate and placing the Micro LED in the groove, and utilizing the groove to enhance the light utilization efficiency of the Micro LED, and adopting the prior art
  • the etching method forms a groove on the substrate.
  • most of the current Micro LEDs have a height of 5 to 10 ⁇ m, etching a groove larger than 5 ⁇ m directly on the substrate is difficult in actual operation.
  • An object of the present invention is to provide a method for fabricating a Micro LED display panel, which is simple in manufacturing method, high in operability, and high in light output efficiency of the obtained Micro LED display panel.
  • the present invention provides a method for fabricating a Micro LED display panel, comprising the following steps:
  • Step S1 providing a driving substrate, forming a photoresist layer on the driving substrate;
  • Step S2 patterning the photoresist layer to form a plurality of accommodating grooves arranged in an array
  • Step S3 setting a Micro LED in each of the accommodating slots.
  • the accommodating groove has a slope angle of less than 60°.
  • the material of the photoresist layer is a resin material, an acrylic material or a siloxane material.
  • the Micro LED disposed in step S3 is a vertical structure of the Micro LED
  • the step S1 further includes: forming a plurality of first pixel electrodes on the driving substrate before forming the photoresist layer;
  • Each of the accommodating grooves formed in the step S2 correspondingly exposes a first pixel electrode
  • the first electrode of the Micro LED is electrically connected to the first pixel electrode
  • the manufacturing method of the Micro LED display panel further includes the following steps after the step S3:
  • each of the second pixel electrodes being electrically connected to a second electrode of the corresponding micro LED through a via hole;
  • a protective layer is formed on the second pixel electrode and the passivation layer.
  • the Micro LED disposed in step S3 is a vertical structure of the Micro LED
  • step S2 the step of forming a first pixel electrode on the surface of each accommodating groove, wherein the Mirco LED is disposed in the accommodating groove in the step S3, the first of the Micro LED An electrode is electrically connected to the first pixel electrode;
  • the manufacturing method of the Micro LED display panel further includes the following steps after the step S3:
  • each of the second pixel electrodes being electrically connected to a second electrode of the corresponding micro LED through a via hole;
  • a protective layer is formed on the second pixel electrode and the passivation layer.
  • the micro LED disposed in the step S3 is a horizontally-structured micro LED, and the step S1 further includes: forming a plurality of first pixel electrodes on the driving substrate before forming the photoresist layer in the step S1, a first pixel electrode each includes a first connection terminal and a second connection terminal disposed at intervals;
  • Each of the accommodating grooves formed in the step S2 correspondingly exposes a first pixel electrode
  • the first electrode and the second electrode of the Micro LED are electrically connected to the first connection terminal and the second connection terminal, respectively;
  • the method further includes the step of forming a protective layer on the photoresist layer, the first pixel electrode and the Micro LED.
  • the Micro LED disposed in the step S3 is a horizontally-structured Micro LED, and the step S2 and the step S3 further include: forming a plurality of first pixel electrodes on the surface of each of the accommodating grooves, each of the first pixel electrodes a first connection terminal and a second connection terminal including a spacing arrangement;
  • the first electrode and the second electrode of the Micro LED are electrically connected to the first connection terminal and the second connection terminal, respectively;
  • the method further includes the step of forming a protective layer on the photoresist layer, the first pixel electrode and the Micro LED.
  • the step of forming the second pixel electrode and the step of forming the protective layer further include the step of forming a light conversion layer on the second pixel electrode above the Micro LED.
  • a bonding layer is formed on the protective layer, and a package substrate is disposed on the bonding layer.
  • the photoresist layer is patterned by an exposure and development process
  • the depth of the accommodating groove is greater than 5 ⁇ m.
  • the invention has the beneficial effects that the manufacturing method of the micro LED display panel of the invention can form the accommodating groove for accommodating the micro LED by patterning the photoresist layer, thereby reducing the difficulty of the process and improving the light extraction efficiency of the micro LED.
  • FIG. 1 to 8 are schematic views showing a first embodiment of a method of fabricating a Micro LED display panel of the present invention
  • FIG. 9 to 16 are schematic views showing a second embodiment of a method of fabricating a Micro LED display panel of the present invention.
  • 17 to 21 are schematic views showing a third embodiment of a method of fabricating a Micro LED display panel of the present invention.
  • 22 to 26 are schematic views showing a fourth embodiment of a method of fabricating a Micro LED display panel of the present invention.
  • Figure 27 is a flow chart showing a method of fabricating the Micro LED display panel of the present invention.
  • the present invention provides a method for fabricating a Micro LED display panel, including the following steps:
  • Step S1 providing a driving substrate 10, forming a photoresist layer 30 on the driving substrate 10;
  • Step S2 the photoresist layer 30 is patterned to form a plurality of accommodating grooves 40 arranged in an array
  • step S3 the Micro LED 50 is disposed in each of the accommodating grooves 40.
  • the present invention preferably sets the taper angle of the accommodating groove 40 to be less than 60°, and the smaller the slope angle of the accommodating groove 40, the better the light extraction effect is.
  • the slope angle of the accommodating groove 40 is not suitable for the limit.
  • the photoresist layer 30 is patterned by an exposure and development process, and the accommodating groove 40 having a depth of more than 5 ⁇ m can be easily fabricated, and the method for etching the substrate is compared with the prior art.
  • the accommodating groove is formed by the exposure and development process on the photoresist layer, which can reduce the difficulty of the process and improve the light-emitting efficiency of the Micro LED.
  • the material of the photoresist layer 30 is a resin material, an acrylic material or a siloxane material.
  • the Micro LED 50 can be divided into a vertical structure of a Micro LED and a horizontal structure of a Micro LED according to a structure.
  • the first electrode and the second electrode of the vertical structure of the Micro LED are respectively located on the upper and lower sides of the Micro LED, horizontally.
  • the first electrode and the second electrode of the structured Micro LED are both located on the underside of the Micro LED.
  • the Micro LED provided in the step S3 is a vertical structure of the Micro LED.
  • a photoresist layer 30 is formed and patterned on the driving substrate 10 and the first pixel electrode 20a to form a plurality of accommodating grooves 40 arranged in an array, and each of the accommodating grooves 40 is formed. Correspondingly exposing a first pixel electrode 20a;
  • a micro LED 50 is disposed in each of the accommodating slots 40, and a first electrode of the micro LED 50 is electrically connected to the first pixel electrode 20a;
  • a passivation layer 60 is formed on the photoresist layer 30, the first pixel electrode 20a and the micro LED 50;
  • the passivation layer 60 is patterned to form a plurality of vias 70 exposing the Micro LED 50;
  • a plurality of second pixel electrodes 80 arranged in an array are formed on the passivation layer 60, and each of the second pixel electrodes 80 is electrically connected to a second electrode of the corresponding micro LED 50 through a via hole 70.
  • a light conversion layer 100 is formed on the second pixel electrode 80 above the Micro LED 50.
  • a protective layer 90 is formed on the second pixel electrode 80 and the passivation layer 60.
  • a bonding layer 110 is formed on the protective layer 90, and a package substrate 120 is provided on the bonding layer 110.
  • the Micro LED provided in the step S3 is a vertical structure of the Micro LED.
  • a driving substrate 10 is provided, a photoresist layer 30 is formed on the driving substrate 10, and the photoresist layer 30 is patterned to form a plurality of accommodating grooves 40 arranged in an array;
  • a first pixel electrode 20b is formed on the surface of each of the accommodating grooves 40;
  • a micro LED 50 is disposed in the accommodating groove 40 , and a first electrode of the micro LED 50 is electrically connected to the first pixel electrode 20 b ;
  • a passivation layer 60 is formed on the photoresist layer 30, the first pixel electrode 20b and the Micro LED 50;
  • a plurality of second pixel electrodes 80 arranged in an array are formed on the passivation layer 60, and each of the second pixel electrodes 80 is electrically connected to a second electrode of the corresponding micro LED 50 through a via hole 70.
  • a light conversion layer 100 is formed on the second pixel electrode 80 above the Micro LED 50.
  • a protective layer 90 is formed on the second pixel electrode 80 and the passivation layer 60;
  • a bonding layer 110 is formed on the protective layer 90, and a package substrate 120 is provided on the bonding layer 110.
  • the light conversion layer 100 may be selectively formed or not formed according to requirements, and when the light conversion layer 100 is not formed, the protection layer 90 corresponds to The area where the light conversion layer 100 is filled may be filled, and the light conversion layer 100 may be formed by a photolithography process or an inkjet printing process, and correspondingly located on the second pixel electrode 80 in the via hole 70, That is, it is located in the groove created by the via hole 70.
  • the first embodiment of the present invention has better process stability than the second embodiment.
  • the first pixel electrode 20b is formed on the slope of the accommodating groove 40. Although the process stability is insufficient, the reflection of the accommodating groove 40 can be enhanced, and the light extraction effect of the accommodating groove 40 is further improved.
  • the second embodiment has better light extraction efficiency than the first embodiment.
  • the Micro LED 50 disposed in the step S3 is a horizontally structured Micro LED
  • each of the first pixel electrodes 20c includes a first connecting terminal 21c and a second connecting terminal 22c which are disposed at intervals;
  • a photoresist layer 30 is formed on the driving substrate 10 and the first pixel electrode 20c, and the photoresist layer 30 is patterned to obtain a plurality of accommodating grooves 40 arranged in an array. a receiving groove 40 correspondingly exposes a first pixel electrode 20c;
  • a micro LED 50 is disposed in the accommodating groove 40, and the first electrode and the second electrode of the micro LED 50 are electrically connected to the first connection terminal 21c and the second connection terminal 22c, respectively;
  • a protective layer 90 is formed on the photoresist layer 30, the first pixel electrode 20c and the Micro LED 50;
  • a bonding layer 110 is formed on the protective layer 90, and a package substrate 120 is provided on the bonding layer 110.
  • the Micro LED 50 disposed in the step S3 is a horizontally structured Micro LED
  • a photoresist layer 30 is formed on the driving substrate 10, and the photoresist layer 30 is patterned to obtain a plurality of accommodating grooves 40 arranged in an array;
  • each of the first pixel electrodes 20d includes a first connection terminal 21d and a second connection terminal 22d which are disposed at intervals;
  • a micro LED 50 is disposed in the accommodating groove 40, and the first electrode and the second electrode of the micro LED 50 are electrically connected to the first connection terminal 21d and the second connection terminal 22d, respectively;
  • a protective layer 90 is formed on the photoresist layer 30, the first pixel electrode 20d and the Micro LED 50;
  • a bonding layer 110 is formed on the protective layer 90, and a package substrate 120 is provided on the bonding layer 110.
  • the third embodiment of the present invention has better process stability than the fourth embodiment.
  • the first pixel electrode is formed on the slope of the accommodating groove 40. Although the process stability is insufficient, the reflection of the accommodating groove 40 can be enhanced, and the light extraction effect of the accommodating groove 40 is further improved. Compared with the third embodiment, the embodiment has better light extraction efficiency.
  • the material of the protective layer 90 is silicon oxide, silicon nitride, or other organic insulating medium, and the bonding layer 110 is adhesive or curable.
  • a resin material which may be cured by heat or light.
  • the manufacturing method of the micro LED display panel of the present invention includes the following steps: step S1, providing a driving substrate, forming a photoresist layer on the driving substrate; and step S2, patterning the photoresist layer Processing, forming a plurality of accommodating grooves arranged in the array; step S3, providing a micro LED in each of the accommodating grooves; and forming a accommodating groove for accommodating the micro LED by patterning the photoresist layer, thereby reducing the difficulty of the process, Improve the light output efficiency of the Micro LED.

Abstract

一种Micro LED（50）显示面板的制作方法，所述Micro LED（50）显示面板的制作方法包括如下步骤：步骤S1、提供一驱动基板（10），在驱动基板（10）上形成光刻胶层（30）；步骤S2、对所述光刻胶层（30）进行图案化处理，形成阵列排布的多个容置槽（40）；步骤S3、在所述各个容置槽（40）内设置Micro LED（50）；通过图案化光刻胶层（30）制作容置Micro LED（50）的容置槽（40），能够降低制程难度，提升Micro LED（50）的出光效率。

Description

Micro LED显示面板的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种Micro LED显示面板的制作方法。
背景技术
随着可穿戴显示设备的快速发展，出现了微发光二极管(Micro LED，uLED)技术。Micro LED技术即LED微缩化和矩阵化技术，指的是在一个芯片上集成的高密度微小尺寸的LED阵列。Micro LED的耗电量远小于液晶显示器(Liquid Crystal Display，LCD)，与有机发光二极管(Organic Light-Emitting Diode，OLED)一样属于自发光，能够将像素之间的距离从毫米等级降至微米等级，色彩饱和度接近OLED，所以很多厂商把Micro LED视为下一代的显示技术。
现有技术通过微转印(Micro Transfer Print)法来制作Micro LED阵列：将LED裸芯片(Bare Chip)通过激光剥离(Laser Lift-off，LLO)技术从蓝宝石衬底上分离开后，使用一个图案化的转移基板(Transfer Layer)将LED裸芯片从供给基板吸附起来，转移到接收基板。具体地，这个接收基板是已经预先制备完成电路图案的硅基板，通过将转移基板与接收基板进行对位，转移基板上所吸附的LED裸芯片被贴附到接收基板的匹配位置，再剥离转移基板，即可完成LED裸芯片的转移。诸如US2013/0210194，US2013/0128585等专利对微转印技术有较为细致地描述。
现有技术中的Micro LED的尺寸大小远小于现有的像素尺寸。例如，现有的55寸的全高清显示面板中，其子像素的长宽分别约为在600μm和200μm，而Micro LED的尺寸约为10～50μm左右，这就导致Micro LED的周围有较大区域是不发光的。由于Micro LED发出的光是向各个方向的，因此会有较多的光能损耗在非显示方向上，光源的利用率较低。为了解决上述问题，现有技术提出了一种在基板上制作凹槽结构，并将Micro LED置于凹槽中，利用凹槽的提升Micro LED的光线利用率的技术方案，并且现有技术采用的是刻蚀的方法在基板上形成凹槽，但由于目前多数Micro LED的高度在5～10μm，直接在基板上刻蚀出大于5μm的凹槽在实际操作时制程难度很大。
发明内容
本发明的目的在于提供一种Micro LED显示面板的制作方法，制作方法简便，可操作性高，且制得的Micro LED显示面板的出光效率高。
为实现上述目的，本发明提供了一种Micro LED显示面板的制作方法，包括如下步骤：
步骤S1、提供一驱动基板，在驱动基板上形成光刻胶层；
步骤S2、对所述光刻胶层进行图案化处理，形成阵列排布的多个容置槽；
步骤S3、在所述各个容置槽内设置Micro LED。
所述容置槽的坡度角小于60°。
所述光刻胶层的材料为树脂材料、亚克力材料或硅氧烷材料。
可选地，所述步骤S3中设置的Micro LED为垂直结构的Micro LED；
所述步骤S1中在形成所述光刻胶层之前还包括：在所述驱动基板上形成多个第一像素电极的步骤；
所述步骤S2中形成的每一个容置槽均对应暴露出一第一像素电极；
所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极与所述第一像素电极电性连接；
所述Micro LED显示面板的制作方法在所述步骤S3之后还包括以下步骤：
在所述光刻胶层、第一像素电极及所述Micro LED上形成一层钝化层；
对所述钝化层进行图案化处理，形成暴露出所述Micro LED的多个过孔；
在所述钝化层上形成阵列排布的多个第二像素电极，每一个第二像素电极均通过一过孔与其对应的Micro LED的第二电极电性连接；
在所述第二像素电极及钝化层上形成保护层。
可选地，所述步骤S3中设置的Micro LED为垂直结构的Micro LED；
所述步骤S2和步骤S3之间还包括：在各个容置槽的表面形成第一像素电极的步骤，所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极与所述第一像素电极电性连接；
所述Micro LED显示面板的制作方法在所述步骤S3之后还包括以下步骤：
在所述光刻胶层、第一像素电极及所述Micro LED上形成一层钝化层；
对所述钝化层进行图案化处理，形成暴露出所述Micro LED的多个过 孔；
在所述钝化层上形成阵列排布的多个第二像素电极，每一个第二像素电极均通过一过孔与其对应的Micro LED的第二电极电性连接；
在所述第二像素电极及钝化层上形成保护层。
所述步骤S3中设置的Micro LED为水平结构的Micro LED，所述步骤S1中在形成所述光刻胶层之前还包括：在所述驱动基板上形成多个第一像素电极的步骤，每一个第一像素电极均包括间隔设置的第一连接端子和第二连接端子；
所述步骤S2中形成的每一个容置槽均对应暴露出一第一像素电极；
所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极和第二电极分别与所述第一连接端子和第二连接端子电性连接；
在所述步骤S3之后还包括以下步骤：在所述光刻胶层、第一像素电极及所述Micro LED上形成一层保护层。
所述步骤S3中设置的Micro LED为水平结构的Micro LED，所述步骤S2和步骤S3之间还包括：在各个容置槽的表面形成多个第一像素电极，每一个第一像素电极均包括间隔设置的第一连接端子和第二连接端子；
所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极和第二电极分别与所述第一连接端子和第二连接端子电性连接；
在所述步骤S3之后还包括以下步骤：在所述光刻胶层、第一像素电极及所述Micro LED上形成一层保护层。
所述形成所述第二像素电极的步骤和形成所述保护层的步骤之间还包括：在所述Micro LED上方的第二像素电极上形成光转换层的步骤。
在形成所述保护层之后还包括以下步骤：
在所述保护层上形成贴合层，在所述贴合层上设置封装基板。
所述步骤S2中通过曝光及显影制程对所述光刻胶层进行图案化处理；
所述容置槽的深度大于5μm。
本发明的有益效果：本发明的Micro LED显示面板的制作方法通过图案化光刻胶层制作容置Micro LED的容置槽，能够降低制程难度，提升Micro LED的出光效率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1至图8为本发明的Micro LED显示面板的制作方法的第一实施例的示意图；
图9至16为本发明的Micro LED显示面板的制作方法的第二实施例的示意图；
图17至21为本发明的Micro LED显示面板的制作方法的第三实施例的示意图；
图22至26为本发明的Micro LED显示面板的制作方法的第四实施例的示意图；
图27为本发明的Micro LED显示面板的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图27，本发明提供一种Micro LED显示面板的制作方法，包括如下步骤：
步骤S1、提供一驱动基板10，在驱动基板10上形成光刻胶层30；
步骤S2、对所述光刻胶层30进行图案化处理，形成阵列排布的多个容置槽40；
步骤S3、在所述各个容置槽40内设置Micro LED50。
具体地，为了保证所述容置槽40的光提取效果，本发明优选设置所述容置槽40的坡度(Taper)角小于60°，容置槽40的坡度角越小光提取效果越好，但考虑到像素的尺寸，容置槽40的坡度角也不宜极限缩小。
具体地，本发明通过曝光及显影制程对所述光刻胶层30进行图案化处理，可以很容易的制得深度大于5μm的容置槽40，相比现有技术采用的刻蚀基板的方法，本发明通过在光刻胶层上曝光及显影制程制作容置槽，能够降低制程难度，提升Micro LED的出光效率。
优选地，所述光刻胶层30的材料为树脂材料、亚克力材料或硅氧烷材料。
具体地，所述Micro LED50按照结构不同，可分为垂直结构的Micro LED和水平结构的Micro LED，垂直结构的Micro LED的第一电极和第二电极分别位于Micro LED的上下两侧，水平的结构的Micro LED的第一电极和第二电极均位于Micro LED的下侧。
具体实施时，如图1至图8所示，在本发明的第一实施例中，所述步 骤S3中设置的Micro LED为垂直结构的Micro LED。
该第一实施例具体包括如下步骤：
如图1所示，首先，在所述驱动基板10上形成多个第一像素电极20a；
如图2所示，接着，在所述驱动基板10及第一像素电极20a上形成并图案化光刻胶层30，形成阵列排布的多个容置槽40，每一个容置槽40均对应暴露出一第一像素电极20a；
如图3所示，然后，在所述各个容置槽40内设置Micro LED50，所述Micro LED50的第一电极与所述第一像素电极20a电性连接；
如图4所示，接着，在所述光刻胶层30、第一像素电极20a及所述Micro LED50上形成一层钝化层60；
接着，对所述钝化层60进行图案化处理，形成暴露出所述Micro LED50的多个过孔70；
如图5所示，在所述钝化层60上形成阵列排布的多个第二像素电极80，每一个第二像素电极80均通过一过孔70与其对应的Micro LED50的第二电极电性连接；
如图6所示，在所述Micro LED50上方的第二像素电极80上形成光转换层100。
如图7所示，在所述第二像素电极80及钝化层60上形成保护层90。
如图8所示，在所述保护层90上形成贴合层110，在所述贴合层110上设置封装基板120。
具体实施时，如图9至图16所示，在本发明的第二实施例中，所述步骤S3中设置的Micro LED为垂直结构的Micro LED。
该第二实施例具体包括如下步骤：
如图9所示，提供一驱动基板10，在驱动基板10上形成光刻胶层30，对所述光刻胶层30进行图案化处理，形成阵列排布的多个容置槽40；
如图10所示，在各个容置槽40的表面形成第一像素电极20b；
如图11所示，在所述容置槽40内设置Micro LED50，所述Micro LED50的第一电极与所述第一像素电极20b电性连接；
如图12所示，在所述光刻胶层30、第一像素电极20b及所述Micro LED50上形成一层钝化层60；
对所述钝化层60进行图案化处理，形成暴露出所述Micro LED50的多个过孔70；
如图13所示，在所述钝化层60上形成阵列排布的多个第二像素电极80，每一个第二像素电极80均通过一过孔70与其对应的Micro LED50的 第二电极电性连接；
如图14所示，在所述Micro LED50上方的第二像素电极80上形成光转换层100。
如图15所示，在所述第二像素电极80及钝化层60上形成保护层90；
如图16所示，在所述保护层90上形成贴合层110，在所述贴合层110上设置封装基板120。
需要说明的是，在本发明的第一和第二实施例中，所述光转换层100可根据需要选择形成或不形成，当所述光转换层100不形成时，所述保护层90相应填充所述光转换层100所在的区域即可，所述光转换层100可通过光刻制程或喷墨打印制程形成，且其对应位于所述过孔70内的第二像素电极80上，也即位于所述由所述过孔70产生的凹槽内。
值得一提的是，由于将第一像素电极20b在光刻胶层30的附着性较差，且需要斜坡连接至所述容置槽40的底部，容易在斜坡与平面的交汇处反射断裂，因此，本发明的所述第一实施例与第二实施例相比，具有更好的制程稳定性。然而，在容置槽40的斜坡上形成第一像素电极20b，虽然制程稳定性不足，但却可以增强容置槽40的反光，进一步提升容置槽40的光提取效果，因此本发明的第二实施例与第一实施例相比，又具有更好的出光效率。
具体实施时，如图17至图21所示，在本发明的第三实施例中，所述步骤S3中设置的Micro LED50为水平结构的Micro LED；
该第三实施例具体包括如下步骤：
如图17所示，在所述驱动基板10上形成多个第一像素电极20c，每一个第一像素电极20c均包括间隔设置的第一连接端子21c和第二连接端子22c；
如图18所示，在所述驱动基板10及第一像素电极20c上形成光刻胶层30，并图案化所述光刻胶层30，得到阵列排布的多个容置槽40，每一个容置槽40均对应暴露出一第一像素电极20c；
如图19所示，在所述容置槽40内设置Micro LED50，所述Micro LED50的第一电极和第二电极分别与所述第一连接端子21c和第二连接端子22c电性连接；
如图20所示，在所述光刻胶层30、第一像素电极20c及所述Micro LED50上形成一层保护层90；
如图21所示，在所述保护层90上形成贴合层110，在所述贴合层110设置封装基板120。
具体实施时，如图22至图26所示，在本发明的第四实施例中，所述步骤S3中设置的Micro LED50为水平结构的Micro LED；
该第四实施例具体包括如下步骤：
如图22所示，在所述驱动基板10上形成光刻胶层30，并图案化所述光刻胶层30，得到阵列排布的多个容置槽40；
如图23所示，在各个容置槽40的表面形成多个第一像素电极20d，每一个第一像素电极20d均包括间隔设置的第一连接端子21d和第二连接端子22d；
如图24所示，在所述容置槽40内设置Micro LED50，所述Micro LED50的第一电极和第二电极分别与所述第一连接端子21d和第二连接端子22d电性连接；
如图25所示，在所述光刻胶层30、第一像素电极20d及所述Micro LED50上形成一层保护层90；
如图26所示，在所述保护层90上形成贴合层110，在所述贴合层110设置封装基板120。
需要说明的是，由于将第一像素电极在光刻胶层30的附着性较差，且需要斜坡连接至所述容置槽40的底部，容易在斜坡与平面的交汇处反射断裂，因此，本发明的所述第三实施例与第四实施例相比，具有更好的制程稳定性。然而，在容置槽40的斜坡上形成第一像素电极，虽然制程稳定性不足，但却可以增强容置槽40的反光，进一步提升容置槽40的光提取效果，因此本发明的第四实施例与第三实施例相比，又具有更好的出光效率。
优选地，在本发明的第一至第四实施例中，所述保护层90的材料为氧化硅、氮化硅、或其他有机绝缘介质，所述贴合层110为粘胶或能够固化的树脂材料，所述固化的方式可以为热固化或光固化。
综上所述，本发明的Micro LED显示面板的制作方法包括如下步骤：步骤S1、提供一驱动基板，在驱动基板上形成光刻胶层；步骤S2、对所述光刻胶层进行图案化处理，形成阵列排布的多个容置槽；步骤S3、在所述各个容置槽内设置Micro LED；通过图案化光刻胶层制作容置Micro LED的容置槽，能够降低制程难度，提升Micro LED的出光效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (14)

  1. 一种Micro LED显示面板的制作方法，包括如下步骤：
    步骤S1、提供一驱动基板，在驱动基板上形成光刻胶层；
    步骤S2、对所述光刻胶层进行图案化处理，形成阵列排布的多个容置槽；
    步骤S3、在所述各个容置槽内设置Micro LED。
  2. 如权利要求1所述的Micro LED显示面板的制作方法，其中，所述容置槽的坡度角小于60°。
  3. 如权利要求1所述的Micro LED显示面板的制作方法，其中，所述光刻胶层的材料为树脂材料、亚克力材料或硅氧烷材料。
  4. 如权利要求1所述的Micro LED显示面板的制作方法，其中，所述步骤S3中设置的Micro LED为垂直结构的Micro LED；
    所述步骤S1中在形成所述光刻胶层之前还包括：在所述驱动基板上形成多个第一像素电极的步骤；
    所述步骤S2中形成的每一个容置槽均对应暴露出一第一像素电极；
    所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极与所述第一像素电极电性连接；
    所述Micro LED显示面板的制作方法在所述步骤S3之后还包括以下步骤：
    在所述光刻胶层、第一像素电极及所述Micro LED上形成一层钝化层；
    对所述钝化层进行图案化处理，形成暴露出所述Micro LED的多个过孔；
    在所述钝化层上形成阵列排布的多个第二像素电极，每一个第二像素电极均通过一过孔与其对应的Micro LED的第二电极电性连接；
    在所述第二像素电极及钝化层上形成保护层。
  5. 如权利要求1所述的Micro LED显示面板的制作方法，其中，所述步骤S3中设置的Micro LED为垂直结构的Micro LED；
    所述步骤S2和步骤S3之间还包括：在各个容置槽的表面形成第一像素电极的步骤，所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极与所述第一像素电极电性连接；
    所述Micro LED显示面板的制作方法在所述步骤S3之后还包括以下步骤：
    在所述光刻胶层、第一像素电极及所述Micro LED上形成一层钝化层；
    对所述钝化层进行图案化处理，形成暴露出所述Micro LED的多个过孔；
    在所述钝化层上形成阵列排布的多个第二像素电极，每一个第二像素电极均通过一过孔与其对应的Micro LED的第二电极电性连接；
    在所述第二像素电极及钝化层上形成保护层。
  6. 如权利要求1所述的Micro LED显示面板的制作方法，其中，所述步骤S3中设置的Micro LED为水平结构的Micro LED，所述步骤S1中在形成所述光刻胶层之前还包括：在所述驱动基板上形成多个第一像素电极，每一个第一像素电极均包括间隔设置的第一连接端子和第二连接端子；
    所述步骤S2中形成的每一个容置槽均对应暴露出一第一像素电极；
    所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极和第二电极分别与所述第一连接端子和第二连接端子电性连接；
    在所述步骤S3之后还包括以下步骤：在所述光刻胶层、第一像素电极及所述Micro LED上形成一层保护层。
  7. 如权利要求1所述的Micro LED显示面板的制作方法，其中，所述步骤S3中设置的Micro LED为水平结构的Micro LED，所述步骤S2和步骤S3之间还包括：在各个容置槽的表面形成多个第一像素电极，每一个第一像素电极均包括间隔设置的第一连接端子和第二连接端子；
    所述步骤S3中Mirco LED设置于所述容置槽后，所述Micro LED的第一电极和第二电极分别与所述第一连接端子和第二连接端子电性连接；
    在所述步骤S3之后还包括以下步骤：在所述光刻胶层、第一像素电极及所述Micro LED上形成一层保护层。
  8. 如权利要求4所述的Micro LED显示面板的制作方法，其中，在所述形成所述第二像素电极的步骤和形成所述保护层的步骤之间还包括：在所述Micro LED上方的第二像素电极上形成光转换层的步骤。
  9. 如权利要求5所述的Micro LED显示面板的制作方法，其中，在所述形成所述第二像素电极的步骤和形成所述保护层的步骤之间还包括：在所述Micro LED上方的第二像素电极上形成光转换层的步骤。
  10. 如权利要求4所述的Micro LED显示面板的制作方法，其中，在形成所述保护层之后还包括以下步骤：
    在所述保护层上形成贴合层，在所述贴合层上设置封装基板。
  11. 如权利要求5所述的Micro LED显示面板的制作方法，其中，在形成所述保护层之后还包括以下步骤：
    在所述保护层上形成贴合层，在所述贴合层上设置封装基板。
  12. 如权利要求6所述的Micro LED显示面板的制作方法，其中，在形成所述保护层之后还包括以下步骤：
    在所述保护层上形成贴合层，在所述贴合层上设置封装基板。
  13. 如权利要求7所述的Micro LED显示面板的制作方法，其中，在形成所述保护层之后还包括以下步骤：
    在所述保护层上形成贴合层，在所述贴合层上设置封装基板。
  14. 如权利要求1所述的Micro LED显示面板的制作方法，其中，所述步骤S2中通过曝光及显影制程对所述光刻胶层进行图案化处理；
    所述容置槽的深度大于5μm。
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