WO2018032753A1 - 显示基板的制作方法、显示装置的制作方法以及显示基板 - Google Patents

显示基板的制作方法、显示装置的制作方法以及显示基板 Download PDF

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WO2018032753A1
WO2018032753A1 PCT/CN2017/076259 CN2017076259W WO2018032753A1 WO 2018032753 A1 WO2018032753 A1 WO 2018032753A1 CN 2017076259 W CN2017076259 W CN 2017076259W WO 2018032753 A1 WO2018032753 A1 WO 2018032753A1
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luminescent material
conductive layer
block
substrate
material block
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PCT/CN2017/076259
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English (en)
French (fr)
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张小祥
郭会斌
刘明悬
张治超
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京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Priority to US15/566,196 priority Critical patent/US10580806B2/en
Publication of WO2018032753A1 publication Critical patent/WO2018032753A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a display substrate, a method for fabricating the display device, and a display substrate.
  • the thin film transistor liquid crystal display has a complicated manufacturing process, and requires an array substrate, a color filter substrate, and a process such as a cassette, and has a long manufacturing cycle.
  • Light Emitting Diode (LED), especially Organic Light Emitting Diode (OLED) is a thin film electroluminescent device, which has the advantages of simple preparation process, low cost, high luminous efficiency, and easy formation of a flexible structure. . Therefore, display technology using light emitting diodes or organic light emitting diodes has become an important display technology.
  • embodiments of the present invention provide a method for fabricating a display substrate, a method for fabricating the display device, and a display substrate, which reduce process steps and improve display quality.
  • an embodiment of the invention provides a method of fabricating a display substrate.
  • the manufacturing method of the display substrate includes: providing a substrate; forming a thin film transistor on the substrate; forming a first conductive layer on the substrate formed with the thin film transistor, the first conductive layer and The drain of the thin film transistor is electrically connected; a block of luminescent material is fabricated; and the block of luminescent material is transferred to a surface of the first conductive layer.
  • the fabricated luminescent material block is transferred to the surface of the first conductive layer; thus, the lithographic process step such as patterning is not required, and the substrate substrate on which the thin film transistor is fabricated is used.
  • a display substrate having a layer of luminescent material can be obtained, saving process steps.
  • luminescent materials are usually fabricated directly on a substrate, and thus are limited by process conditions such as temperature, and it is difficult to obtain a desired ruler.
  • the luminescent material block can be separately fabricated, and thus the size (e.g., area, thickness) and composition of the luminescent material block can be adjusted as needed without being limited by the above, thereby further improving the display quality.
  • the step of fabricating the luminescent material block comprises: forming a luminescent material block on the wafer.
  • a desired block of luminescent material can be obtained with precise process conditions.
  • a luminescent material block can be fabricated on a wafer using a photolithographic process.
  • the step of fabricating the luminescent material block further comprises: singulating the luminescent material block.
  • the luminescent material pieces By singulating the luminescent material pieces, the luminescent material pieces can be transferred to the surface of the conductive layer according to a predetermined arrangement order.
  • the step of transferring the luminescent material block to the surface of the first conductive layer comprises: picking up the luminescent material block and bonding the luminescent material block to a surface of the first conductive layer.
  • the luminescent material block can be accurately bonded to the surface of the conductive layer using a high precision pick-up machine to achieve a desired resolution.
  • the step of bonding the luminescent material block to the surface of the first conductive layer comprises: applying a conductive paste on a surface of the luminescent material block or a surface of the first conductive layer, and A block of luminescent material is attached to the surface of the first conductive layer.
  • the luminescent material block may be placed directly on the surface of the conductive layer to form an electrical connection; in order to form a better electrical contact, a conductive paste may also be applied on the surface of the luminescent material block or the conductive layer. a surface to thereby attach the luminescent material block to a surface of the conductive layer.
  • the luminescent material block comprises at least a luminescent material block for emitting red light, a luminescent material block for emitting green light, and a luminescent material block for emitting blue light.
  • Color display can be achieved with red, green and blue light. Similarly, it is also possible to use a block of luminescent material for emitting light of other colors to achieve more color combinations.
  • the step of forming a thin film transistor on the base substrate comprises: forming a gate line and a gate on the base substrate; forming an insulating layer and an amorphous silicon layer sequentially on the gate line and the gate , data lines, sources and drains; and forming a passivation layer.
  • the step of forming a thin film transistor on the base substrate includes forming a number on the base substrate a line, a source and a drain; an insulating layer, an amorphous silicon layer, a gate line, and a gate electrode are sequentially formed on the gate line and the gate; and a passivation layer is formed.
  • the above elements can be formed by a photolithography process to form a thin film transistor.
  • the invention is not limited thereto.
  • an embodiment of the present invention provides a method of fabricating a display device.
  • the manufacturing method of the display device includes: a method of fabricating a display substrate as described in the above embodiments; and forming a second conductive layer on a surface of the luminescent material block facing away from the first conductive layer.
  • the fabricated luminescent material block is transferred to the surface of the first conductive layer; thus, the lithographic process steps such as patterning are not required, and the substrate substrate on which the thin film transistor is fabricated is used.
  • a display substrate having a layer of luminescent material can be obtained, saving process steps.
  • An adjustable voltage can be applied to the block of luminescent material using the first conductive layer and the second conductive layer to achieve adjustable illumination and display.
  • the method further includes: packaging the display substrate.
  • the display substrate may be encapsulated with a material such as a transparent encapsulation layer to prevent the luminescent material block from being attacked by oxygen and water.
  • an embodiment of the present invention provides a display substrate.
  • the display substrate includes: a substrate substrate; a plurality of gate lines and a plurality of data lines formed on the base substrate; the plurality of gate lines and the plurality of data lines defining a plurality of pixels; wherein each of the The pixel includes a thin film transistor, a first conductive layer and a luminescent material block; the gate of the thin film transistor is electrically connected to the gate line, the source is electrically connected to the data line, and the drain is electrically connected to the first conductive layer; A block of material is on the surface of the first conductive layer.
  • luminescent materials are usually fabricated directly on a substrate, and thus it is difficult to obtain a luminescent material block having a desired size and composition, limited by process conditions such as temperature.
  • the luminescent material block can be separately fabricated, and thus the size (e.g., area, thickness) and composition of the luminescent material block can be adjusted as needed without being limited by the above, thereby further improving the display quality.
  • FIG. 1 shows a flow chart of a method of fabricating a display substrate in accordance with an embodiment of the present invention
  • FIG. 3 is a partial plan view showing a display substrate fabricated by a method of fabricating a display substrate according to an embodiment of the invention
  • Figure 4 illustrates the fabrication of a block of luminescent material on a wafer
  • FIG. 5 is a flow chart showing a method of fabricating a display device according to an embodiment of the present invention.
  • FIG. 6 is a block diagram showing the structure of a display device according to an embodiment of the present invention.
  • FIG. 1 is a flow chart showing a method of fabricating a display substrate according to an embodiment of the present invention.
  • the manufacturing method 100 of the display substrate includes: S101 provides a substrate substrate 201 (as shown in FIG. 2a); S102 forms a thin film transistor 202 on the substrate substrate 201 (as shown in FIG. 2b, The thin film transistor 202 includes a gate electrode 2023, a source electrode 2024, a drain electrode 2025, an insulating layer 2026, and an amorphous silicon layer 2027); S103 forms a first conductive layer 203 on the base substrate 201 on which the thin film transistor 202 is formed.
  • the first conductive layer 203 is electrically connected to the drain 2025 of the thin film transistor 202 (as shown in FIG. 2c); S104 is formed into a luminescent material block 204 (as shown in FIG. 2d); and S105 is used to block the luminescent material. 204 is transferred to the surface of the first conductive layer 203 (as shown in Figure 2e).
  • the fabricated luminescent material block is transferred to the surface of the first conductive layer; thus, the lithographic process step such as patterning is not required, and the substrate substrate on which the thin film transistor is fabricated is used.
  • a display substrate having a layer of luminescent material can be obtained, saving process steps.
  • luminescent materials are usually fabricated directly on a substrate, and thus it is difficult to obtain a luminescent material block having a desired size and composition, limited by process conditions such as temperature.
  • the luminescent material block can be separately fabricated, and thus the size (e.g., area, thickness) and composition of the luminescent material block can be adjusted as needed without being limited by the above, thereby further improving the display quality.
  • FIG 3 is a partial plan view of a display substrate 200 fabricated by a method of fabricating a display substrate in accordance with an embodiment of the present invention.
  • a luminescent material block 2041 for emitting red light a luminescent material block 2042 for emitting green light, and a luminescent material block 2043 for emitting blue light are bonded to the surface of the first conductive layer 203.
  • the first conductive layer 203 may be made of metal or ITO.
  • the display substrate 200 includes: a substrate substrate 201; a plurality of gate lines 2021 and a plurality of data lines 2022 formed on the substrate substrate 201; the plurality of gate lines 2021 and the plurality of data lines 2022 define a plurality of a pixel 205; wherein each of the pixels 205 includes a thin film transistor 202, a first conductive layer 203, and luminescent material blocks 2041, 2042, 2043; a gate 2023 of the thin film transistor 202 is electrically connected to the gate line 2021, and the source 2024 is The data line 2022 is electrically connected, and the drain 2025 is electrically connected to the first conductive layer 203; the luminescent material blocks 2041, 2042, and 2043 are located on a surface of the first conductive layer 203.
  • the step of fabricating a luminescent material block includes: forming a luminescent material block 204 on the wafer 401.
  • a desired block of luminescent material can be obtained with precise process conditions.
  • a luminescent material block can be fabricated on a wafer using a photolithographic process.
  • the step of fabricating the luminescent material block further comprises: singulating the luminescent material block 204.
  • the luminescent material pieces By singulating the luminescent material pieces, the luminescent material pieces can be transferred to the surface of the conductive layer according to a predetermined arrangement order.
  • the step of transferring the luminescent material block to the surface of the first conductive layer comprises: picking up the luminescent material block 204, and bonding the luminescent material block 204 to the first conductive layer 203 surface.
  • the luminescent material block can be accurately bonded to the surface of the conductive layer using a high precision pick-up machine to achieve a desired resolution.
  • the step of bonding the luminescent material block to the surface of the first conductive layer comprises: applying a conductive paste on a surface of the luminescent material block 204 or a surface of the first conductive layer 203, and The luminescent material block 204 is attached to the surface of the first conductive layer 203.
  • the luminescent material block may be placed directly on the surface of the conductive layer to form an electrical connection; in order to form a better electrical contact, a conductive paste may also be applied on the surface of the luminescent material block or the conductive layer. Surface, thereby attaching the luminescent material block to the conductive The surface of the layer.
  • the luminescent material block 204 includes at least a luminescent material block 2041 for emitting red light, a luminescent material block 2042 for emitting green light, and a luminescent material block 2043 for emitting blue light.
  • Color display can be achieved with red, green and blue light. Similarly, it is also possible to use a block of luminescent material for emitting light of other colors to achieve more color combinations.
  • the step of forming a thin film transistor on the base substrate includes: forming a gate line 2021 and a gate electrode 2023 on the base substrate 201; and the gate line 2021
  • An insulating layer 2026, an amorphous silicon layer 2027, a data line 2022, a source 2024, and a drain 2025 are sequentially formed on the gate electrode 2023; and a passivation layer 2028 is formed.
  • the thin film transistor formed in the above manner is a bottom gate type thin film transistor.
  • the thin film transistor may also be a top gate type thin film transistor. Therefore, the step of forming a thin film transistor on the base substrate includes: forming a data line, a source and a drain on the base substrate; forming an insulating layer sequentially on the gate line and the gate , an amorphous silicon layer, a gate line, and a gate; and a passivation layer is formed.
  • the above elements can be formed by a photolithography process to form a thin film transistor.
  • the invention is not limited thereto.
  • an embodiment of the present invention provides a method of fabricating a display device.
  • the method 500 for manufacturing a display device includes: S501, a method for fabricating a display substrate according to the above embodiment; and S502, facing away from the first conductive layer of the luminescent material block 204.
  • the surface of 203 forms a second conductive layer 206.
  • the fabricated luminescent material block is transferred to the surface of the first conductive layer; thus, the lithographic process steps such as patterning are not required, and the substrate substrate on which the thin film transistor is fabricated is used.
  • a display substrate having a layer of luminescent material can be obtained, saving process steps.
  • An adjustable voltage can be applied to the block of luminescent material using the first conductive layer and the second conductive layer to achieve adjustable illumination and display.
  • the method 500 further includes: S503 encapsulating the display substrate.
  • the display substrate may be encapsulated with a material such as a transparent encapsulation layer 207 to prevent the luminescent material block from being attacked by oxygen and water.
  • a flat layer 208 may also be applied to thereby display the display base
  • the board 200 is flattened.
  • an embodiment of the present invention provides a display substrate.
  • the display substrate 200 includes: a substrate substrate 201; a plurality of gate lines 2021 and a plurality of data lines 2022 formed on the substrate substrate 201; the plurality of gate lines 2021 and a plurality of lines
  • the data line 2022 defines a plurality of pixels 205; wherein each of the pixels 205 includes a thin film transistor 202, a first conductive layer 203, and luminescent material blocks 2041, 2042, 2043; the gate 2023 of the thin film transistor 202 is electrically connected to the gate line 2021.
  • the source 2024 is electrically connected to the data line 2022, and the drain 2025 is electrically connected to the first conductive layer 203; the luminescent material blocks 2041, 2042, and 2043 are located on the surface of the first conductive layer 203.
  • luminescent materials are usually fabricated directly on a substrate, and thus it is difficult to obtain a luminescent material block having a desired size and composition, limited by process conditions such as temperature.
  • the luminescent material block can be separately fabricated, and thus the size (e.g., area, thickness) and composition of the luminescent material block can be adjusted as needed without being limited by the above, thereby further improving the display quality.
  • the method for fabricating a display substrate, the method for fabricating the display device, and the display substrate of the display substrate are transferred to the surface of the first conductive layer; thus, the photolithography process steps such as patterning are not required
  • a substrate substrate having a thin film transistor can obtain a display substrate having a layer of a light-emitting material, saving process steps.
  • luminescent materials are usually fabricated directly on a substrate, and thus it is difficult to obtain a luminescent material block having a desired size and composition, limited by process conditions such as temperature.
  • the luminescent material block can be separately fabricated, and thus the size (e.g., area, thickness) and composition of the luminescent material block can be adjusted as needed without being limited by the above, thereby further improving the display quality.

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Abstract

提供一种显示基板的制作方法、显示装置的制作方法以及显示基板。显示基板的制作方法包括：提供衬底基板（S101）；在所述衬底基板上形成薄膜晶体管（S102）；在形成有所述薄膜晶体管的衬底基板上形成第一导电层，所述第一导电层与所述薄膜晶体管的漏极电连接（S103）；制作发光材料块（S104）；以及将所述发光材料块转移到所述第一导电层的表面S105。

Description

显示基板的制作方法、显示装置的制作方法以及显示基板
相关申请
本申请要求保护在2016年8月15日提交的申请号为201610666962.X的中国专利申请的优先权，该申请的全部内容以引用的方式结合到本文中。
技术领域
本发明涉及显示技术领域，尤其涉及一种显示基板的制作方法、显示装置的制作方法以及显示基板。
背景技术
薄膜晶体管液晶显示器(TFT-LCD)制作工艺复杂，需要制作阵列基板、制作彩膜基板、以及对盒等工序，制作周期长。发光二极管(LED，Light Emitting Diode)尤其是有机发光二极管(OLED，Organic Light Emitting Diode)是一种薄膜电致发光器件，其具有制备工艺简单、成本低、发光效率高、易形成柔性结构等优点。因此，利用发光二极管或有机发光二极管的显示技术已成为一种重要的显示技术。
发明内容
有鉴于此，本发明实施例提出了一种显示基板的制作方法、显示装置的制作方法以及显示基板，减少工艺步骤，提高显示质量。
根据本发明的一个方面，本发明实施例提供了一种显示基板的制作方法。所述显示基板的制作方法包括：提供衬底基板；在所述衬底基板上形成薄膜晶体管；在形成有所述薄膜晶体管的衬底基板上形成第一导电层，所述第一导电层与所述薄膜晶体管的漏极电连接；制作发光材料块；以及将所述发光材料块转移到所述第一导电层的表面。
根据本发明实施例的显示基板的制作方法，将制作好的发光材料块转移到所述第一导电层的表面；这样，无需构图等光刻工艺步骤，利用制作有薄膜晶体管的衬底基板就能够获得具有发光材料层的显示基板，节省了工艺步骤。现有技术中，发光材料通常直接制作在衬底基板上，因此受诸如温度等工艺条件的限制，难以获得具有期望的尺 寸和成分的发光材料块。根据本发明实施例，可以单独制作发光材料块，因此发光材料块的尺寸(例如，面积、厚度)和成分可以根据需要进行调整，而不受上述限制，从而还提高了显示品质。
可选地，所述制作发光材料块的步骤包括：在晶圆上制作发光材料块。
通过在晶圆上制作发光材料块，能够以精确的工艺条件获得期望的发光材料块。本领域技术人员能够理解，可以利用光刻工艺在晶圆上制作发光材料块。
可选地，所述制作发光材料块的步骤还包括：将所述发光材料块单粒化。
将所述发光材料块单粒化，可以根据预定的排列顺序将发光材料块转移到所述导电层的表面。
可选地，将所述发光材料块转移到所述第一导电层的表面的步骤包括：拾取所述发光材料块，并将所述发光材料块结合至所述第一导电层的表面。
可以利用高精度的拾取机器将所述发光材料块精确地结合至所述导电层的表面，从而实现期望的分辨率。
可选地，将所述发光材料块结合至所述第一导电层的表面的步骤包括：将导电胶涂敷在所述发光材料块的表面或所述第一导电层的表面，并将所述发光材料块附着至所述第一导电层的表面。
可以将所述发光材料块直接放置在所述导电层的表面以形成电连接；为了形成更好的电接触，也可以将导电胶涂敷在所述发光材料块的表面或所述导电层的表面，从而将所述发光材料块附着至所述导电层的表面。
可选地，所述发光材料块至少包括用于发射红光的发光材料块、用于发射绿光的发光材料块和用于发射蓝光的发光材料块。
利用红色、绿色和蓝色的光，可以实现彩色显示。类似地，还可以使用用于发射其他颜色光的发光材料块来实现更多的色彩组合。
可选地，在所述衬底基板上形成薄膜晶体管的步骤包括：在所述衬底基板上形成栅线和栅极；在所述栅线和栅极上依次形成绝缘层、非晶硅层、数据线、源极和漏极；以及形成钝化层。可替换地，在所述衬底基板上形成薄膜晶体管的步骤包括：在所述衬底基板上形成数 据线、源极和漏极；在所述栅线和栅极上依次形成绝缘层、非晶硅层、栅线和栅极；以及形成钝化层。
可以利用光刻工艺形成上述元件，从而形成薄膜晶体管。本发明对此不做限定。
根据本发明的另一个方面，本发明实施例提供了一种显示装置的制作方法。所述显示装置的制作方法包括：如以上实施例所述的显示基板的制作方法；以及在所述发光材料块的背离所述第一导电层的表面形成第二导电层。
根据本发明实施例的显示装置的制作方法，将制作好的发光材料块转移到所述第一导电层的表面；这样，无需构图等光刻工艺步骤，利用制作有薄膜晶体管的衬底基板就能够获得具有发光材料层的显示基板，节省了工艺步骤。利用所述第一导电层和第二导电层可以向所述发光材料块施加可调的电压，从而实现可调的发光和显示。
可选地，在所述发光材料块的背离所述第一导电层的表面形成第二导电层之后，所述方法还包括：封装所述显示基板。
可以利用透明封装层等材料来封装所述显示基板，从而防止所述发光材料块受到氧气和水的侵蚀。
根据本发明的又一个方面，本发明实施例提供了一种显示基板。所述显示基板包括：衬底基板；形成在所述衬底基板上的多条栅线和多条数据线；所述多条栅线和多条数据线限定多个像素；其中每个所述像素包括薄膜晶体管、第一导电层和发光材料块；所述薄膜晶体管的栅极与栅线电连接，源极与数据线电连接，漏极与所述第一导电层电连接；所述发光材料块位于所述第一导电层的表面上。
现有技术中，发光材料通常直接制作在衬底基板上，因此受诸如温度等工艺条件的限制，难以获得具有期望的尺寸和成分的发光材料块。根据本发明实施例，可以单独制作发光材料块，因此发光材料块的尺寸(例如，面积、厚度)和成分可以根据需要进行调整，而不受上述限制，从而还提高了显示品质。
附图说明
图1示出了根据本发明实施例的显示基板的制作方法的流程图；
图2a-2e示出了根据本发明实施例的显示基板的制作方法的各步 骤的示意图；
图3示出了根据本发明实施例的显示基板的制作方法制作的显示基板的局部俯视图；
图4示出了在晶圆上制作发光材料块；
图5示出了根据本发明实施例的显示装置的制作方法的流程图；以及
图6示出了根据本发明实施例的显示装置的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明专利保护的范围。
根据本发明的一个方面，本发明实施例提供了一种显示基板的制作方法；图1示出了根据本发明实施例的显示基板的制作方法的流程图。如图1所示，所述显示基板的制作方法100包括：S101提供衬底基板201(如图2a所示)；S102在所述衬底基板201上形成薄膜晶体管202(如图2b所示，所述薄膜晶体管202包括栅极2023、源极2024、漏极2025、绝缘层2026和非晶硅层2027)；S103在形成有所述薄膜晶体管202的衬底基板201上形成第一导电层203，所述第一导电层203与所述薄膜晶体管202的漏极2025电连接(如图2c所示)；S104制作发光材料块204(如图2d所示)；以及S105将所述发光材料块204转移到所述第一导电层203的表面(如图2e所示)。
根据本发明实施例的显示基板的制作方法，将制作好的发光材料块转移到所述第一导电层的表面；这样，无需构图等光刻工艺步骤，利用制作有薄膜晶体管的衬底基板就能够获得具有发光材料层的显示基板，节省了工艺步骤。现有技术中，发光材料通常直接制作在衬底基板上，因此受诸如温度等工艺条件的限制，难以获得具有期望的尺寸和成分的发光材料块。根据本发明实施例，可以单独制作发光材料块，因此发光材料块的尺寸(例如，面积、厚度)和成分可以根据需要进行调整，而不受上述限制，从而还提高了显示品质。
图3示出了根据本发明实施例的显示基板的制作方法制作的显示基板200的局部俯视图。在该实施例中，用于发射红光的发光材料块2041、用于发射绿光的发光材料块2042和用于发射蓝光的发光材料块2043被结合到所述第一导电层203的表面。所述第一导电层203可以由金属或ITO制成。所述显示基板200包括：衬底基板201；形成在所述衬底基板201上的多条栅线2021和多条数据线2022；所述多条栅线2021和多条数据线2022限定多个像素205；其中每个所述像素205包括薄膜晶体管202、第一导电层203和发光材料块2041、2042、2043；所述薄膜晶体管202的栅极2023与栅线2021电连接，源极2024与数据线2022电连接，漏极2025与所述第一导电层203电连接；所述发光材料块2041、2042、2043位于所述第一导电层203的表面上。
可选地，如图4所示，所述制作发光材料块的步骤包括：在晶圆401上制作发光材料块204。
通过在晶圆上制作发光材料块，能够以精确的工艺条件获得期望的发光材料块。本领域技术人员能够理解，可以利用光刻工艺在晶圆上制作发光材料块。
可选地，所述制作发光材料块的步骤还包括：将所述发光材料块204单粒化。
将所述发光材料块单粒化，可以根据预定的排列顺序将发光材料块转移到所述导电层的表面。
可选地，将所述发光材料块转移到所述第一导电层的表面的步骤包括：拾取所述发光材料块204，并将所述发光材料块204结合至所述第一导电层203的表面。
可以利用高精度的拾取机器将所述发光材料块精确地结合至所述导电层的表面，从而实现期望的分辨率。
可选地，将所述发光材料块结合至所述第一导电层的表面的步骤包括：将导电胶涂敷在所述发光材料块204的表面或所述第一导电层203的表面，并将所述发光材料块204附着至所述第一导电层203的表面。
可以将所述发光材料块直接放置在所述导电层的表面以形成电连接；为了形成更好的电接触，也可以将导电胶涂敷在所述发光材料块的表面或所述导电层的表面，从而将所述发光材料块附着至所述导电 层的表面。
可选地，如图3所示，所述发光材料块204至少包括用于发射红光的发光材料块2041、用于发射绿光的发光材料块2042和用于发射蓝光的发光材料块2043。
利用红色、绿色和蓝色的光，可以实现彩色显示。类似地，还可以使用用于发射其他颜色光的发光材料块来实现更多的色彩组合。
可选地，如图2b和图3所示，在所述衬底基板上形成薄膜晶体管的步骤包括：在所述衬底基板201上形成栅线2021和栅极2023；在所述栅线2021和栅极2023上依次形成绝缘层2026、非晶硅层2027、数据线2022、源极2024和漏极2025；以及形成钝化层2028。本领域技术人员能够理解，以上述方式形成的薄膜晶体管是底栅型薄膜晶体管。
类似地，所述薄膜晶体管还可以是顶栅型薄膜晶体管。因此，可替换地，在所述衬底基板上形成薄膜晶体管的步骤包括：在所述衬底基板上形成数据线、源极和漏极；在所述栅线和栅极上依次形成绝缘层、非晶硅层、栅线和栅极；以及形成钝化层。
可以利用光刻工艺形成上述元件，从而形成薄膜晶体管。本发明对此不做限定。
根据本发明的另一个方面，本发明实施例提供了一种显示装置的制作方法。如图5和图6所示，所述显示装置的制作方法500包括：S501如以上实施例所述的显示基板的制作方法；以及S502在所述发光材料块204的背离所述第一导电层203的表面形成第二导电层206。
根据本发明实施例的显示装置的制作方法，将制作好的发光材料块转移到所述第一导电层的表面；这样，无需构图等光刻工艺步骤，利用制作有薄膜晶体管的衬底基板就能够获得具有发光材料层的显示基板，节省了工艺步骤。利用所述第一导电层和第二导电层可以向所述发光材料块施加可调的电压，从而实现可调的发光和显示。
可选地，在所述发光材料块204的背离所述第一导电层203的表面形成第二导电层206之后，所述方法500还包括：S503封装所述显示基板。
如图6所示，可以利用透明封装层207等材料来封装所述显示基板，从而防止所述发光材料块受到氧气和水的侵蚀。可选地，在施加所述透明封装层207之前，还可以施加平坦层208，从而将所述显示基 板200平坦化。
根据本发明的又一个方面，本发明实施例提供了一种显示基板。如图2e所示，所述显示基板200包括：衬底基板201；形成在所述衬底基板201上的多条栅线2021和多条数据线2022；所述多条栅线2021和多条数据线2022限定多个像素205；其中每个所述像素205包括薄膜晶体管202、第一导电层203和发光材料块2041、2042、2043；所述薄膜晶体管202的栅极2023与栅线2021电连接，源极2024与数据线2022电连接，漏极2025与所述第一导电层203电连接；所述发光材料块2041、2042、2043位于所述第一导电层203的表面上。
现有技术中，发光材料通常直接制作在衬底基板上，因此受诸如温度等工艺条件的限制，难以获得具有期望的尺寸和成分的发光材料块。根据本发明实施例，可以单独制作发光材料块，因此发光材料块的尺寸(例如，面积、厚度)和成分可以根据需要进行调整，而不受上述限制，从而还提高了显示品质。
本发明实施例提供的显示基板的制作方法、显示装置的制作方法以及显示基板将制作好的发光材料块转移到所述第一导电层的表面；这样，无需构图等光刻工艺步骤，利用制作有薄膜晶体管的衬底基板就能够获得具有发光材料层的显示基板，节省了工艺步骤。现有技术中，发光材料通常直接制作在衬底基板上，因此受诸如温度等工艺条件的限制，难以获得具有期望的尺寸和成分的发光材料块。根据本发明实施例，可以单独制作发光材料块，因此发光材料块的尺寸(例如，面积、厚度)和成分可以根据需要进行调整，而不受上述限制，从而还提高了显示品质。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型。

Claims (11)

  1. 一种显示基板的制作方法，其特征在于，包括：
    提供衬底基板；
    在所述衬底基板上形成薄膜晶体管；
    在形成有所述薄膜晶体管的衬底基板上形成第一导电层，所述第一导电层与所述薄膜晶体管的漏极电连接；
    制作发光材料块；以及
    将所述发光材料块转移到所述第一导电层的表面。
  2. 如权利要求1所述的方法，其特征在于，所述制作发光材料块的步骤包括：在晶圆上制作发光材料块。
  3. 如权利要求2所述的方法，其特征在于，所述制作发光材料块的步骤还包括：将所述发光材料块单粒化。
  4. 如权利要求1所述的方法，其特征在于，将所述发光材料块转移到所述第一导电层的表面的步骤包括：
    拾取所述发光材料块，并将所述发光材料块结合至所述第一导电层的表面。
  5. 如权利要求4所述的方法，其特征在于，将所述发光材料块结合至所述第一导电层的表面的步骤包括：
    将导电胶涂敷在所述发光材料块的表面或所述第一导电层的表面，并将所述发光材料块附着至所述第一导电层的表面。
  6. 如权利要求1-5之一所述的方法，其特征在于，所述发光材料块至少包括用于发射红光的发光材料块、用于发射绿光的发光材料块和用于发射蓝光的发光材料块。
  7. 如权利要求1-5之一所述的方法，其特征在于，在所述衬底基板上形成薄膜晶体管的步骤包括：
    在所述衬底基板上形成栅线和栅极；
    在所述栅线和栅极上依次形成绝缘层、非晶硅层、数据线、源极和漏极；以及
    形成钝化层。
  8. 如权利要求1-5之一所述的方法，其特征在于，在所述衬底基板上形成薄膜晶体管的步骤包括：
    在所述衬底基板上形成数据线、源极和漏极；
    在所述栅线和栅极上依次形成绝缘层、非晶硅层、栅线和栅极；以及
    形成钝化层。
  9. 一种显示装置的制作方法，其特征在于，包括：
    如权利要求1-8之一所述的显示基板的制作方法；以及
    在所述发光材料块的背离所述第一导电层的表面形成第二导电层。
  10. 如权利要求9所述的方法，其特征在于，在所述发光材料块的背离所述第一导电层的表面形成第二导电层之后，所述方法还包括：
    封装所述显示基板。
  11. 一种显示基板，其特征在于，包括：
    衬底基板；
    形成在所述衬底基板上的多条栅线和多条数据线；所述多条栅线和多条数据线限定多个像素；
    其中每个所述像素包括薄膜晶体管、第一导电层和发光材料块；所述薄膜晶体管的栅极与栅线电连接，源极与数据线电连接，漏极与所述第一导电层电连接；所述发光材料块位于所述第一导电层的表面上。
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