WO2021046684A1 - 一种巨量转移装置及其方法 - Google Patents

一种巨量转移装置及其方法 Download PDF

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Publication number
WO2021046684A1
WO2021046684A1 PCT/CN2019/104944 CN2019104944W WO2021046684A1 WO 2021046684 A1 WO2021046684 A1 WO 2021046684A1 CN 2019104944 W CN2019104944 W CN 2019104944W WO 2021046684 A1 WO2021046684 A1 WO 2021046684A1
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micro
nano
mass transfer
transfer device
array
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PCT/CN2019/104944
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English (en)
French (fr)
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洪温振
许时渊
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重庆康佳光电技术研究院有限公司
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Priority to CN201980001638.8A priority Critical patent/CN110998821B/zh
Priority to PCT/CN2019/104944 priority patent/WO2021046684A1/zh
Publication of WO2021046684A1 publication Critical patent/WO2021046684A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

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  • the invention relates to the technical field of mass transfer, in particular to a mass transfer device and a method thereof.
  • Micro-component technology refers to an array of tiny-sized components integrated with high density on a drive circuit board.
  • micro-pitch light-emitting diode (Micro-LED) technology has gradually become a research hotspot.
  • Micro-LED technology namely LED miniaturization and matrix technology, has good stability, longevity, and operating temperature advantages, while also inheriting LED has the advantages of low power consumption, color saturation, fast response speed, and strong contrast.
  • Micro-LED has higher brightness and lower power consumption. After the Micro-LED is manufactured, tens to hundreds of thousands of Micro-LEDs need to be transferred to the driving circuit board to form an LED array. This process is called "mass transfer”. Smaller micro-elements such as Micro-LEDs are transferred through a mass transfer device.
  • the key is to make a large number of micro-elements located in corresponding positions, even if the micro-elements are aligned.
  • the alignment efficiency of micro-elements is low, resulting in low transfer efficiency.
  • the technical problem to be solved by the present invention is to provide a mass transfer device and method for the above-mentioned defects of the prior art, aiming to solve the problem of low transfer efficiency caused by low alignment efficiency of micro-elements in the prior art.
  • a mass transfer device which comprises: a bottom plate, an alignment groove arranged on the bottom plate and used for placing micro-elements, and a nano structure arranged on the bottom plate; the alignment groove and the nano structure are located The same side of the bottom plate.
  • the nanostructure is a nanoarray.
  • the nano-array is one or more of a columnar nano-array, a mesa nano-array, a cone-shaped nano-array, and a convex-convex nano-array.
  • the mass transfer device wherein:
  • the columnar nano-array includes: cylindrical nano-array, triangular prism nano-array, square-pillar nano-array, hexagonal-prism nano-array, and cross-pillar nano-array;
  • the mesa nano-array includes: a circular mesa nano-array, a triangular mesa nano-array, a 4-prism mesa nano-array, a hexagonal mesa nano-array, and a cross mesa nano-array;
  • the cone-shaped nano arrays include: cone nano arrays, triangular pyramid nano arrays, quadrangular pyramid nano arrays, hexagonal pyramid nano arrays, and cross-cone nano arrays;
  • the convex-hull nano-array includes: a round convex-hull nano-array, an elliptical convex-hull nano-array, and a long waist-shaped convex-hull nano-array.
  • the top ends of the array units in the nano-array are arranged flush.
  • the micro-element is a Micro-LED.
  • the alignment grooves are distributed in an array.
  • the height of the alignment groove is smaller than the height of the micro component.
  • the size of the nanostructure is 20-100 nm.
  • the nanostructure is made of the following materials: one or more of TiO 2 , SnO 2 , Si, Pt, Pd, and Rh.
  • the shape of the alignment groove is adapted to the shape of the micro element.
  • a method for mass transfer wherein the mass transfer device as described in any one of the above is adopted, which includes the following steps:
  • the alignment groove is filled, the excess micro-elements on the mass transfer device are removed, and the transfer process is performed.
  • the method for mass transfer wherein the placing a micro component on the mass transfer device and shaking the mass transfer device to make the micro component fall into the alignment groove includes:
  • the method for mass transfer wherein the placing a micro component on the mass transfer device and shaking the mass transfer device to make the micro component fall into the alignment groove includes:
  • micro-elements into different shapes according to the light-emitting wavelength of the micro-elements, and configuring the alignment grooves as alignment grooves of corresponding shapes;
  • the transfer processing includes:
  • Fig. 1 is a schematic diagram of the first structure of the mass transfer device of the present invention.
  • Fig. 2 is a schematic diagram of the second structure of the mass transfer device of the present invention.
  • Fig. 3 is a schematic diagram of the structure of the substrate and the mass transfer device in the present invention.
  • Figure 4 is a top view of the mass transfer device of the present invention.
  • Fig. 5 is a bottom view of the Micro-LED in the present invention.
  • Fig. 6 is a schematic diagram of the structure of the square pillar nanoarray in the present invention.
  • FIG. 7 is a schematic diagram of the structure of the cylindrical nanoarray in the present invention.
  • FIG. 8 is a schematic diagram of the structure of the cross-pillar nano-array in the present invention.
  • Fig. 9 is a schematic diagram of the structure of the conical nanoarray in the present invention.
  • Figure 10 is a flow chart of the mass transfer method of the present invention.
  • the present invention provides some embodiments of a mass transfer device.
  • a mass transfer device of the present invention includes: a bottom plate 10, an alignment groove 11 arranged on the bottom plate 10 and used for placing micro-elements, and a nanostructure 12 arranged on the bottom plate 10
  • the alignment groove 11 and the nanostructure 12 are located on the same side of the base plate 10.
  • the application scenario of the present invention is as follows: firstly perform alignment processing, place the micro-elements on the bottom plate 10, and make the micro-elements fall into the alignment groove 11 by means of shaking, horizontal movement, horizontal blowing or sifting. Then, the transfer process is performed, the substrate 30 (or a driving circuit board) is covered on the bottom plate 10, and the micro components are connected to the substrate 30, and finally the bottom plate 10 is removed, and the micro components are transferred to the substrate 30.
  • the shape of the alignment groove 11 is adapted to the shape of the micro-element.
  • the micro-element here includes but is not limited to Micro-LED 20.
  • other light-emitting micro elements can also be used.
  • semiconductor lasers As shown in Figures 1 to 5, the Micro-LED 20 in the present invention adopts a horizontal type, including a chip 21 and two pad points 22 arranged under the chip 21.
  • the chip 21 can be etched into a specific shape, where the specific shape is As for the asymmetrical pattern, the corresponding alignment slot 11 adopts a shape adapted to the chip 21.
  • the chip 21 adopts an asymmetric pattern, that is, there is no axis of symmetry, only when the chip 21 and the alignment slot 11 are completely overlapped, the micro component can fall into the alignment slot 11, even if the micro component is turned over, it cannot fall into the alignment. Slot 11.
  • the chip 21 is located at the bottom of the alignment slot 11, and the pad point 22 is located at the top of the alignment slot 11. This ensures that the pad point 22 is facing upwards to facilitate the connection between the pad point 22 and the substrate 30 .
  • nanostructures 12 are provided on the surface of the bottom plate 10, that is to say, the protrusions on the surface of the bottom plate 10 are nano-scale.
  • the surface roughness of the bottom plate 10 is reduced, and the friction between the bottom plate 10 and the micro components is also reduced; on the other hand, due to the gap between the nano unit and the nano unit in the nano structure 12, the gap part is not In the case of atoms or molecules, there is no mutual attraction between atoms and molecules, only the mutual attraction between atoms and molecules exists between the nano unit and the micro-elements of the nanostructure 12, thereby reducing the surface atoms The mutual attraction between the molecules further reduces the friction between the bottom plate 10 and the micro-elements.
  • the micro component after placing the micro component on the bottom plate 10, after shaking (or horizontal movement, horizontal blowing), the micro component will slide and fall into the alignment groove 11 to achieve alignment and reduce the gap between the micro component and the bottom plate 10.
  • the friction force can facilitate the sliding of the micro-components, improve the alignment efficiency, and thus increase the transfer efficiency.
  • the size of the bumps formed by ordinary polishing is not uniform, and nano-level and micro-level bumps can exist at the same time, which increases the roughness.
  • the nano-units in the nano-structure 12 in the present invention are all nano-level. Yes, the roughness of the nanostructure 12 is lower.
  • the nanostructure 12 is a nanoarray.
  • the nanounits in the nanostructure 12 are distributed in an array (in this case, the nanounits are the array units).
  • the nanounits may not be distributed in an array, for example, they are distributed freely, that is, they are not distributed according to a certain rule.
  • the array distribution is adopted, the distribution of the nano-units is more uniform, avoiding the dense distribution of nano-units in some places and loose distribution in other places, which increases the roughness.
  • the nanoarray is one or more of columnar nanoarrays, mesa nanoarrays, cone-shaped nanoarrays, and convex-convex nanoarrays. .
  • the columnar nanoarrays include: cylindrical nanoarrays, triangular prism nanoarrays, square column nanoarrays, hexagonal prism nanoarrays, and cross column nanoarrays;
  • the mesa nanoarrays include: circular truncated prism nanoarrays, triangular prism nanoarrays, and four Pyramid nanoarrays, hexagonal pyramid nanoarrays, and cross pyramid nanoarrays;
  • the cone-shaped nanoarrays include: conical nanoarrays, triangular pyramid nanoarrays, quadrangular pyramid nanoarrays, hexagonal pyramid nanoarrays, and cross pyramid nanoarrays;
  • the convex-hull nanoarrays include: circular convex-hull nanoarrays, elliptical convex-hull nanoarrays, and long waist-shaped convex-hull nanoarrays.
  • the array unit of the nanoarray can take various forms, for example, nanocones, nanorods, and nanospheres.
  • the side with the smaller area of the array unit is turned outwards, that is, the number of atoms and molecules in contact with the micro-elements is reduced as much as possible, and the mutual attraction between the surface atoms and molecules is reduced.
  • the tops of the array units in the nanoarray are arranged flush. Specifically, the tops of the array units in the nanoarray are flat and in the same plane, which can ensure the flatness of the contact surface between the nanostructures 12 and the microelements, thereby further reducing the gap between the microelements and the nanostructures 12. Friction.
  • the alignment grooves 11 are arranged in an array. Specifically, the alignment grooves 11 are distributed on the bottom plate 10 in an array, where the array includes a rectangular array, a circular array, a triangular array, etc., and the type of the array is set as required.
  • the height (or depth) of the alignment groove 11 can be greater than the height of the micro component, or can be less than the height of the micro component. It can be equal to the height of the micro element.
  • the micro component cannot easily come out of the alignment groove 11 after falling into the alignment groove 11.
  • the micro component can be more easily connected to the substrate 30 in the subsequent transfer process.
  • the size of the nanostructure 12 is 20-100 nm. Specifically, the size of the nanostructure 12 is in the range of 20-100 nm regardless of whether it is columnar, mesa, cone, or convex hull.
  • the nanostructure 12 is made of the following materials: one or more of TiO 2 , SnO 2 , Si, Pt, Pd, and Rh.
  • TiO 2 , SnO 2 , Si, Pt, Pd, and Rh are materials that can be used to prepare the nanostructure 12, for example, a material with higher hardness is used, which is beneficial to reduce friction.
  • a vacuum suction hole (not shown in the figure) is provided at the bottom of the alignment groove 11. Specifically, after the micro component is dropped into the positioning groove 11, the micro component can be sucked into the positioning groove 11 through a vacuum suction hole to prevent the micro component from coming out of the positioning groove 11. Adjusting the size of the adsorption force can make the size of the adsorption force greater than the gravity of the micro component. Even if the bottom plate 10 is turned over, the micro component will not fall. Therefore, during the transfer process, the mass transfer device filled with micro-components can be covered on the substrate 30, and the connection of the micro-components and the substrate 30 can be realized.
  • a mass transfer method uses the mass transfer device described in any one of the above embodiments, and includes the following steps:
  • Step S100 placing a micro component on the mass transfer device, and shaking the mass transfer device to make the micro component fall into the alignment groove 11.
  • step S100 is the alignment process.
  • the alignment process includes but is not limited to the following two implementations.
  • the first implementation is that the shape of each micro component is the same, and the shape of each alignment slot 11 is also the same ;
  • the second implementation is that the shapes of the micro-elements with different emission wavelengths are different, and the shapes of the corresponding alignment grooves 11 are also different.
  • step S100 includes the following steps:
  • Step S110a classify the micro-elements according to the light-emitting wavelength of the micro-elements, and allocate the corresponding alignment slots 11.
  • the colors of the Micro-LED 20 are usually divided into three types: R (red), G (green), and B (blue).
  • the three types of Micro-LEDs 20 of, G, and B form a repeating unit, and the repeating unit is repeatedly arranged to form an array, so the three types of Micro-LEDs 20 of R, G, and B are uniformly distributed.
  • the three types of R, G, and B Micro-LEDs 20 have corresponding alignment slots 11, and the corresponding alignment slots 11 are also arranged according to a certain rule.
  • Step S120a Acquire various types of micro-elements in sequence, and shield the alignment grooves 11 that do not correspond to the micro-elements.
  • Step S130a placing the obtained micro component on the mass transfer device, and oscillate the mass transfer device to make the micro component fall into the alignment groove 11.
  • one of the various types of micro-components can be obtained first, and the mask plate is used to pair other types of micro-components (G, B-type Micro-LED 20).
  • the bit slot 11 is shielded, and only the alignment slot 11 corresponding to this type of micro-component (in this case, the R type Micro-LED 20) is retained, then this type of micro-component will only fall into the corresponding alignment slot 11, and will not fall Into the aligning slot 11 corresponding to other types of micro-components.
  • the redundant micro-components are removed, and the alignment of the next-type micro-components is performed until all the micro-elements of the type are aligned.
  • step S100 includes the following steps:
  • step S110b the micro-elements are respectively made into different shapes according to the light-emitting wavelength of the micro-elements, and the alignment grooves 11 are configured as alignment grooves 11 of corresponding shapes.
  • Step S120b placing the micro component on the mass transfer device, and shaking the mass transfer device to make the micro component fall into the corresponding alignment groove 11.
  • micro-elements Since different types of micro-elements have different shapes, that is to say, the micro-elements will only fall into the alignment slot 11 corresponding to the micro-elements, and will not fall into the alignment slots 11 corresponding to other types of micro-elements.
  • the micro components are placed on the bottom plate 10 together, and the alignment processing is performed at the same time.
  • Step S200 After the alignment groove 11 is filled, the excess micro-elements on the mass transfer device are removed, and the transfer process is performed.
  • Step S200 specifically includes:
  • step S210 a substrate 30 is provided, and solder 31 is spotted on the substrate 30.
  • the substrate 30 here may be a glass substrate, a silicon substrate, a flexible substrate, etc., and the solder 31 is used to connect the pad points 22 to the substrate 30 to fix the Micro-LED 20.
  • Step S220 Cover the surface of the substrate 30 on which the solder 31 is spotted on the mass transfer device so that the micro-elements are connected to the substrate 30 through the solder 31, as described in detail.
  • the present invention provides a mass transfer device and method thereof.
  • the mass transfer device includes: a bottom plate, an alignment slot arranged on the bottom plate and used for placing micro-components, and The nano structure on the bottom plate; the alignment groove and the nano structure are located on the same side of the bottom plate.

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Abstract

一种巨量转移装置及其方法，巨量转移装置包括：底板（10）、设置在底板（10）上并用于放置微元件的对位槽（11）、设置在底板（10）上的纳米结构（12）；对位槽（11）和纳米结构（12）位于底板（10）的同侧。通过在底板（10）上设置纳米结构（12），降低微元件与底板（10）之间的摩擦力，可利于微元件的滑动，提高对位效率，从而增加转移效率。

Description

一种巨量转移装置及其方法 技术领域
本发明涉及巨量转移技术领域，尤其涉及的是一种巨量转移装置及其方法。
背景技术
微元件技术是指在驱动电路板上以高密度集成的微小尺寸的元件阵列。目前，微间距发光二极管(Micro-LED)技术逐渐成为研究热门，Micro-LED技术，即LED微缩化和矩阵化技术，具有良好的稳定性，寿命，以及运行温度上的优势，同时也承继了LED低功耗、色彩饱和度、反应速度快、对比度强等优点，Micro-LED的亮度更高，且功率消耗量更低。Micro-LED在制作完成之后，需要将几万至几十万个Micro-LED转移到驱动电路板上形成LED阵列，这一过程被称为“巨量转移”。Micro-LED等尺寸较小的微元件通过巨量转移装置进行转移。
巨量转移装置在进行转移过程中，关键是要使大量的微元件位于对应的位置上，即使微元件的对位。现有技术中，微元件的对位效率低，导致转移效率低。
因此，现有技术还有待于改进和发展。
发明内容
本发明要解决的技术问题在于，针对现有技术的上述缺陷，提供一种巨量转移装置及其方法，旨在解决现有技术中微元件的对位效率低导致转移效率低的问题。
本发明解决技术问题所采用的技术方案如下：
一种巨量转移装置，其中，包括：底板、设置在所述底板上并用于放置微元件的对位槽、设置在所述底板上的纳米结构；所述对位槽和所述纳米结构位于所述底板的同侧。
所述的巨量转移装置，其中，所述纳米结构为纳米阵列。
所述的巨量转移装置，其中，所述纳米阵列为柱状纳米阵列、台状纳米阵列、锥状纳米阵列、凸包纳米阵列中的一种或多种。
所述的巨量转移装置，其中，
所述柱状纳米阵列包括：圆柱纳米阵列、三棱柱纳米阵列、方柱纳米阵列、六棱柱纳米阵列以及十字柱纳米阵列；
所述台状纳米阵列包括：圆台纳米阵列、三棱台纳米阵列、四棱台纳米阵列、六棱台纳米阵列以及十字台纳米阵列；
所述锥状纳米阵列包括：圆锥纳米阵列、三棱锥纳米阵列、四棱锥纳米阵列、六棱锥纳米阵列以及十字锥纳米阵列；
所述凸包纳米阵列包括：圆形凸包纳米阵列、椭圆形凸包纳米阵列以及长腰形凸包纳米阵列。
所述的巨量转移装置，其中，所述纳米阵列中阵列单元的顶端平齐设置。
所述的巨量转移装置，其中，所述微元件为Micro-LED。
所述的巨量转移装置，其中，所述对位槽呈阵列分布。
所述的巨量转移装置，其中，所述对位槽的高度小于所述微元件的高度。
所述的巨量转移装置，其中，所述纳米结构的尺寸为20-100nm。
所述的巨量转移装置，其中，所述纳米结构采用如下材料制成：TiO 2、SnO 2、Si、Pt、Pd、Rh中的一种或多种。
所述的巨量转移装置，其中，所述对位槽的形状与所述微元件的形状适配。
一种巨量转移方法，其中，采用如上述任意一项所述的巨量转移装置，其包括如下步骤：
将微元件置于所述巨量转移装置上，并震荡所述巨量转移装置使所述微元件落入所述对位槽中；
在所述对位槽填满后，去除所述巨量转移装置上多余的微元件，并进行转移处理。
所述的巨量转移方法，其中，所述将微元件置于所述巨量转移装置上，并震荡所述巨量转移装置使所述微元件落入所述对位槽中，包括：
将所述微元件以所述微元件的发光波长进行分类，并分配相应的所述对位槽；
依次获取各类所述微元件，并将不与所述微元件对应的所述对位槽遮蔽；
将获取的所述微元件置于所述巨量转移装置上，并震荡所述巨量转移装置使所述微元件落入所述对位槽中。
所述的巨量转移方法，其中，所述将微元件置于所述巨量转移装置上，并震 荡所述巨量转移装置使所述微元件落入所述对位槽中，包括：
将所述微元件以所述微元件的发光波长分别制成不同形状，并将所述对位槽配置为相应形状的对位槽；
将所述微元件置于所述巨量转移装置上，并震荡所述巨量转移装置使所述微元件落入相应的所述对位槽中。
所述的巨量转移方法，其中，所述转移处理包括：
提供基板，并在所述基板上点焊料；
将所述基板点有焊料的一面盖在所述巨量转移装置上使所述微元件通过焊料与所述基板连接。
有益效果：通过在底板上设置纳米结构，降低微元件与底板之间的摩擦力，可利于微元件的滑动，提高对位效率，从而增加转移效率。
附图说明
图1是本发明中巨量转移装置的第一结构示意图。
图2是本发明中巨量转移装置的第二结构示意图。
图3是本发明中基板和巨量转移装置的结构示意图。
图4是本发明中巨量转移装置的俯视图。
图5是本发明中Micro-LED的仰视图。
图6是本发明中方柱纳米阵列的结构示意图。
图7是本发明中圆柱纳米阵列的结构示意图。
图8是本发明中十字柱纳米阵列的结构示意图。
图9是本发明中圆锥纳米阵列的结构示意图。
图10是本发明中巨量转移方法的流程图。
具体实施方式
为使本发明的目的、技术方案及优点更加清楚、明确，以下参照附图并举实施例对本发明进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
请同时参阅图1-图9，本发明提供了一种巨量转移装置的一些实施例。
如图1所示，本发明的一种巨量转移装置，包括：底板10、设置在所述底板10上并用于放置微元件的对位槽11、设置在所述底板10上的纳米结构12；所述对位槽11和所述纳米结构12位于所述底板10的同侧。
本发明的应用场景如下：先进行对位处理，将微元件置于底板10上，并采用震荡、水平移动、水平吹气或者筛摇的方式使微元件落入对位槽11中。然后进行转移处理，将基板30(也可以是驱动电路板)盖在底板10上，并使微元件和基板30连接，最后取下底板10，微元件就被转移到基板30上。
值得说明的是，所述对位槽11的形状与所述微元件的形状适配，这里的微元件包括但不限于Micro-LED 20，除了Micro-LED 20，还可以采用其它发光微元件，例如半导体激光器。如图1-图5所示，本发明中的Micro-LED 20采用水平式，包括芯片21以及设置在芯片21下的两个pad点22，芯片21可以蚀刻成特定形状，这里的特定形状为不对称图形，对应的对位槽11采用与芯片21适配的形状。由于芯片21采用不对称图形，即不存在对称轴，只有芯片21与对位槽11完全重合时，微元件才可以落入到对位槽11中，即使微元件翻转过来也是无法落入对位槽11中。当Micro-LED 20落入对位槽11后，芯片21位于对位槽11底部，pad点22位于对位槽11顶部，这样确保pad点22是朝上的，方便pad点22与基板30连接。
固体表面之间的摩擦力的来因有两个：固体表面原子、分子之间相互的吸引力和它们之间的表面粗糙所造成的互相之间卡住的阻力。由于绝对光滑的表面是不存在的，也就是说，固体表面一定是粗糙的，只是粗糙程度不同，固体表面存在各种凸起，这些凸起的尺寸越大，则粗糙程度越高，凸起的尺寸越小，粗糙程度越小。
本发明在底板10的表面设置纳米结构12，也就是说底板10表面的凸起是纳米级的。一方面，降低了底板10表面的粗糙程度，也就降低了底板10与微元件之间的摩擦力；另一方面，由于纳米结构12中纳米单元与纳米单元之间存在间隙，间隙部分是没有原子或分子的，也就不存在原子、分子之间的相互的吸引力，只有纳米结构12的纳米单元与微元件之间存在原子、分子之间的相互的吸引力，从而减小了表面原子、分子之间相互的吸引力，也就进一步降低了底板10与微元件之间的摩擦力。因此，在将微元件放置在底板10上后，经过震荡(或 者水平移动、水平吹气)，微元件会滑动并落入对位槽11中，实现对位，降低微元件与底板10之间的摩擦力，可利于微元件的滑动，提高对位效率，从而增加转移效率。
通常的抛光打磨形成的凸起的尺寸并不是均一的，可以同时存在纳米级、微米级的凸起，这就增加了粗糙程度，而本发明中的纳米结构12中的纳米单元都是纳米级的，纳米结构12的粗糙程度更低。
在本发明的一个较佳实施例中，如图6-图9所示，所述纳米结构12为纳米阵列。
具体地，纳米结构12中的纳米单元呈阵列分布(此时，纳米单元即为阵列单元)，当然纳米单元也可以不呈阵列分布，例如，呈自由分布，即不是按照一定规律分布。采用阵列分布时，各纳米单元分布更均匀，避免纳米单元一些地方密集分布，另一些地方疏松分布而增加了粗糙程度。
在本发明的一个较佳实施例中，如图6-图9所示，所述纳米阵列为柱状纳米阵列、台状纳米阵列、锥状纳米阵列、凸包纳米阵列中的一种或多种。所述柱状纳米阵列包括：圆柱纳米阵列、三棱柱纳米阵列、方柱纳米阵列、六棱柱纳米阵列以及十字柱纳米阵列；所述台状纳米阵列包括：圆台纳米阵列、三棱台纳米阵列、四棱台纳米阵列、六棱台纳米阵列以及十字台纳米阵列；所述锥状纳米阵列包括：圆锥纳米阵列、三棱锥纳米阵列、四棱锥纳米阵列、六棱锥纳米阵列以及十字锥纳米阵列；所述凸包纳米阵列包括：圆形凸包纳米阵列、椭圆形凸包纳米阵列以及长腰形凸包纳米阵列。
具体地，纳米阵列的阵列单元可以采用多种形式，例如，纳米锥，纳米棒，纳米球。在采用这些阵列单元时，是将阵列单元面积较小的一侧向外，也就是说，尽可能减小与微元件接触的原子、分子数量，降低表面原子、分子之间相互的吸引力。
在本发明的一个较佳实施例中，如图6-图9所示，所述纳米阵列中阵列单元的顶端平齐设置。具体地，纳米阵列中的阵列单元的顶端是平齐的，是处于同一平面内，这样可以确保纳米结构12与微元件的接触面的平整性，从而进一步减小微元件与纳米结构12之间的摩擦力。
在本发明的一个较佳实施例中，如图6-图9所示，所述对位槽11呈阵列分 布。具体地，对位槽11采用阵列分布在底板10上，这里的阵列包括矩形阵列、圆形阵列、三角形阵列等，根据需要设置阵列的类型。
在本发明的一个较佳实施例中，如图2-图3所示，对位槽11的高度(或者说是深度)可以是大于微元件的高度，也可以是小于微元件的高度，也可以是等于微元件的高度。
在对位槽11的高度大于微元件的高度时，微元件落入了对位槽11中后不容易从对位槽11中出来。在对位槽11的高度小于微元件的高度时，在后续的转移处理中，微元件可以更容易地连接到基板30。
在本发明的一个较佳实施例中，如图6-图9所示，所述纳米结构12的尺寸为20-100nm。具体地，不管是采用柱状、台状、锥状还是凸包，纳米结构12的尺寸在20-100nm的范围内。
在本发明的一个较佳实施例中，所述纳米结构12采用如下材料制成：TiO 2、SnO 2、Si、Pt、Pd、Rh中的一种或多种。当然还可以采用其它材料制备纳米结构12，例如采用硬度较高的材料，有利于降低摩擦力。
在本发明的一个较佳实施例中，所述对位槽11底部设置有真空吸附孔(图中未示出)。具体地，在微元件落入对位槽11中后可以开通过真空吸附孔将微元件吸附在对位槽11中，避免微元件从对位槽11中出来。调整吸附力的大小，可以使吸附力的大小大于微元件的重力大小，即使将底板10翻过来，微元件也不会掉落。因此，在转移处理时，可以将填有微元件的巨量转移装置盖在基板30上，并实现微元件与基板30的连接。
本发明还提供了一种巨量转移方法的较佳实施例：
如图10所示，本发明实施例所述一种巨量转移方法，采用如上述任意一实施例所述的巨量转移装置，并包括以下步骤：
步骤S100、将微元件置于所述巨量转移装置上，并震荡所述巨量转移装置使所述微元件落入所述对位槽11中。
具体地，步骤S100即对位处理，根据不同要求，对位处理包括但不限于如下两种实现方式，第一种实现方式是，各微元件的形状相同，各对位槽11的形状也相同；第二种实现方式是，不同发光波长的微元件的形状不同，对应的对位槽11的形状也不同。
第一种实现方式下，步骤S100包括如下步骤：
步骤S110a、将所述微元件以所述微元件的发光波长进行分类，并分配相应的所述对位槽11。
这里所有的微元件的形状是相同的，为了使不同波长的微元件均匀分布，通常Micro-LED 20的颜色分为R(红色)、G(绿色)、B(蓝色)三种，将R、G、B三种Micro-LED 20组成一个重复单元，并以该重复单元重复排列形成阵列，那么R、G、B三种Micro-LED 20都是均匀分布的。R、G、B三种Micro-LED 20具有对应的对位槽11，对应的对位槽11也是按照一定规律排布的。
步骤S120a、依次获取各类所述微元件，并将不与所述微元件对应的所述对位槽11遮蔽。
步骤S130a、将获取的所述微元件置于所述巨量转移装置上，并震荡所述巨量转移装置使所述微元件落入所述对位槽11中。
具体地，可以先获取各类所述微元件中的某一类(例如，R类Micro-LED 20)，并采用掩模板将其它类微元件(G、B类Micro-LED 20)对应的对位槽11遮蔽，只保留该类微元件(此时为R类Micro-LED 20)对应的对位槽11，那么该类微元件只会落入对应的对位槽11中，而不会落入其它类微元件对应的对位槽11中。当该类微元件完成对位后，清除多余的微元件，进行下一类微元件的对位，直至所有类微元件都完成对位。
第二种实现方式下，步骤S100包括如下步骤：
步骤S110b、将所述微元件以所述微元件的发光波长分别制成不同形状，并将所述对位槽11配置为相应形状的对位槽11。
步骤S120b、将所述微元件置于所述巨量转移装置上，并震荡所述巨量转移装置使所述微元件落入相应的所述对位槽11中。
由于不同类微元件具有不同形状，也就是说，微元件只会落入该微元件对应的对位槽11中，不会落入其它类微元件对应的对位槽11中，那么可以将所有微元件一起放在底板10上，同时进行对位处理。
步骤S200、在所述对位槽11填满后，去除所述巨量转移装置上多余的微元件，并进行转移处理。
步骤S200具体包括：
步骤S210、提供基板30，并在所述基板30上点焊料31。
这里的基板30可以是玻璃基板、硅基板、柔性基板等，焊料31用于将pad点22连接在基板30上，从而固定Micro-LED 20。
步骤S220、将所述基板30点有焊料31的一面盖在所述巨量转移装置上使所述微元件通过焊料31与所述基板30连接，具体如上所述。
综上所述，本发明所提供的一种巨量转移装置及其方法，所述巨量转移装置包括：底板、设置在所述底板上并用于放置微元件的对位槽、设置在所述底板上的纳米结构；所述对位槽和所述纳米结构位于所述底板的同侧。通过在底板上设置纳米结构，降低微元件与底板之间的摩擦力，可利于微元件的滑动，提高对位效率，从而增加转移效率。
应当理解的是，本发明的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本发明所附权利要求的保护范围。

Claims (15)

  1. 一种巨量转移装置，其特征在于，包括：底板、设置在所述底板上并用于放置微元件的对位槽、设置在所述底板上的纳米结构；所述对位槽和所述纳米结构位于所述底板的同侧。
  2. 根据权利要求1所述的巨量转移装置，其特征在于，所述纳米结构为纳米阵列。
  3. 根据权利要求2所述的巨量转移装置，其特征在于，所述纳米阵列为柱状纳米阵列、台状纳米阵列、锥状纳米阵列、凸包纳米阵列中的一种或多种。
  4. 根据权利要求3所述的巨量转移装置，其特征在于，
    所述柱状纳米阵列包括：圆柱纳米阵列、三棱柱纳米阵列、方柱纳米阵列、六棱柱纳米阵列以及十字柱纳米阵列；
    所述台状纳米阵列包括：圆台纳米阵列、三棱台纳米阵列、四棱台纳米阵列、六棱台纳米阵列以及十字台纳米阵列；
    所述锥状纳米阵列包括：圆锥纳米阵列、三棱锥纳米阵列、四棱锥纳米阵列、六棱锥纳米阵列以及十字锥纳米阵列；
    所述凸包纳米阵列包括：圆形凸包纳米阵列、椭圆形凸包纳米阵列以及长腰形凸包纳米阵列。
  5. 根据权利要求2所述的巨量转移装置，其特征在于，所述纳米阵列中阵列单元的顶端平齐设置。
  6. 根据权利要求1所述的巨量转移装置，其特征在于，所述微元件为Micro-LED。
  7. 根据权利要求1-6任意一项所述的巨量转移装置，其特征在于，所述对位槽呈阵列分布。
  8. 根据权利要求1-6任意一项所述的巨量转移装置，其特征在于，所述对位槽的高度小于所述微元件的高度。
  9. 根据权利要求1-6任意一项所述的巨量转移装置，其特征在于，所述纳米结构的尺寸为20-100nm。
  10. 根据权利要求1-6任意一项所述的巨量转移装置，其特征在于，所述纳米结构采用如下材料制成：TiO 2、SnO 2、Si、Pt、Pd、Rh中的一种或多种。
  11. 根据权利要求1-6任意一项所述的巨量转移装置，其特征在于，所述对 位槽的形状与所述微元件的形状适配。
  12. 一种巨量转移方法，其特征在于，采用如权利要求1-11任意一项所述的巨量转移装置，其包括如下步骤：
    将微元件置于所述巨量转移装置上，并震荡所述巨量转移装置使所述微元件落入所述对位槽中；
    在所述对位槽填满后，去除所述巨量转移装置上多余的微元件，并进行转移处理。
  13. 根据权利要求12所述的巨量转移方法，其特征在于，所述将微元件置于所述巨量转移装置上，并震荡所述巨量转移装置使所述微元件落入所述对位槽中，包括：
    将所述微元件以所述微元件的发光波长进行分类，并分配相应的所述对位槽；
    依次获取各类所述微元件，并将不与所述微元件对应的所述对位槽遮蔽；
    将获取的所述微元件置于所述巨量转移装置上，并震荡所述巨量转移装置使所述微元件落入所述对位槽中。
  14. 根据权利要求12所述的巨量转移方法，其特征在于，所述将微元件置于所述巨量转移装置上，并震荡所述巨量转移装置使所述微元件落入所述对位槽中，包括：
    将所述微元件以所述微元件的发光波长分别制成不同形状，并将所述对位槽配置为相应形状的对位槽；
    将所述微元件置于所述巨量转移装置上，并震荡所述巨量转移装置使所述微元件落入相应的所述对位槽中。
  15. 根据权利要求12所述的巨量转移方法，其特征在于，所述转移处理包括：
    提供基板，并在所述基板上点焊料；
    将所述基板点有焊料的一面盖在所述巨量转移装置上使所述微元件通过焊料与所述基板连接。
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