WO2021081906A1 - 承接背板及其制备方法、背板 - Google Patents

承接背板及其制备方法、背板 Download PDF

Info

Publication number
WO2021081906A1
WO2021081906A1 PCT/CN2019/114767 CN2019114767W WO2021081906A1 WO 2021081906 A1 WO2021081906 A1 WO 2021081906A1 CN 2019114767 W CN2019114767 W CN 2019114767W WO 2021081906 A1 WO2021081906 A1 WO 2021081906A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
base substrate
photoresist
emitting device
clamping
Prior art date
Application number
PCT/CN2019/114767
Other languages
English (en)
French (fr)
Inventor
梁志伟
罗雯倩
吕志军
刘英伟
王珂
曹占锋
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/043,937 priority Critical patent/US20230131247A1/en
Priority to CN201980002236.XA priority patent/CN113133327B/zh
Priority to PCT/CN2019/114767 priority patent/WO2021081906A1/zh
Publication of WO2021081906A1 publication Critical patent/WO2021081906A1/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655Nickel [Ni] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/0568Molybdenum [Mo] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/114Manufacturing methods by blanket deposition of the material of the bump connector
    • H01L2224/11444Manufacturing methods by blanket deposition of the material of the bump connector in gaseous form
    • H01L2224/1145Physical vapour deposition [PVD], e.g. evaporation, or sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/116Manufacturing methods by patterning a pre-deposited material
    • H01L2224/1162Manufacturing methods by patterning a pre-deposited material using masks
    • H01L2224/11622Photolithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1301Shape
    • H01L2224/13011Shape comprising apertures or cavities, e.g. hollow bump
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1301Shape
    • H01L2224/13012Shape in top view
    • H01L2224/13014Shape in top view being circular or elliptic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1301Shape
    • H01L2224/13016Shape in side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/1605Shape
    • H01L2224/16057Shape in side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/1605Shape
    • H01L2224/1607Shape of bonding interfaces, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81193Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812Applying energy for connecting
    • H01L2224/81201Compression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8134Bonding interfaces of the bump connector
    • H01L2224/81345Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81897Mechanical interlocking, e.g. anchoring, hook and loop-type fastening or the like
    • H01L2224/81898Press-fitting, i.e. pushing the parts together and fastening by friction, e.g. by compression of one part against the other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present disclosure relates to a receiving substrate, a preparation method of the receiving substrate, and a backplane.
  • Micro LED is a device with a size between several micrometers and hundreds of micrometers. When in use, it is necessary to first grow micro-light-emitting diodes on the supply substrate, and then transfer the micro-light-emitting diodes to the receiving substrate with circuit patterns by micro-transfer technology and perform bonding and fixation.
  • the present disclosure provides a supporting substrate, a preparation method of the supporting substrate, and a backplane.
  • an embodiment of the present disclosure provides a receiving substrate, which includes: a base substrate and a plurality of connecting electrodes arranged on the base substrate, at least one of the connecting electrodes facing away from the base substrate One side is provided with a clamping electrode, the clamping electrode is electrically connected with the corresponding connection electrode, and the clamping electrode is configured to clamp and fix the electrode pins of the micro light-emitting device.
  • the clamping electrode includes: a side conductive portion, the side conductive portion extends in a direction away from the base substrate, and the side conductive portion is connected to a plane parallel to the base substrate.
  • the formed inscribed angle is an acute angle.
  • the range of the inscribed angle includes: [60°, 70°].
  • the clamping electrode further includes: a bottom conductive part, the bottom conductive part is located between the side conductive part and the connection electrode;
  • the side surface conductive portion is connected to the bottom surface conductive portion facing the end surface of the base substrate.
  • the side conductive portion and the bottom conductive portion are integrally formed.
  • the orthographic projection of the side conductive portion on the base substrate is annular.
  • the orthographic projection of the side conductive portion on the base substrate is a ring shape with at least one gap, and the gap penetrates the inner boundary and the outer boundary of the ring.
  • the clamping electrode is provided on the side of each connection electrode facing away from the base substrate.
  • the material of the clamping electrode includes aluminum.
  • the embodiments of the present disclosure also provide a method for preparing a receiving substrate, which includes:
  • a clamping electrode is formed on the side of at least one of the connection electrodes facing away from the base substrate, the clamping electrode is electrically connected to the corresponding connection electrode, and the clamping electrode is configured to be capable of clamping and fixing the micro-luminescence The electrode pin of the device.
  • the step of forming a clamping electrode includes:
  • the inscribed angle formed by the plane of the base substrate is an acute angle
  • the part of the conductive material film located on the side of the first photoresist facing away from the base substrate is removed, and the part of the conductive material film located in the slot is used as the clamping electrode.
  • the method further includes:
  • the step of removing the conductive material film on the side of the first photoresist facing away from the base substrate includes:
  • the part of the conductive material film on the side of the first photoresist facing away from the base substrate is removed by an etching process.
  • a plasma etching process is used to remove the predetermined thickness of the second photoresist.
  • embodiments of the present disclosure also provide a backplane, including: the receiving substrate of the first aspect of the present disclosure.
  • it further includes: at least one micro light emitting device, the micro light emitting device comprising a micro light emitting device body and a plurality of electrode pins electrically connected to the micro light emitting device body, at least one of the micro light emitting device The electrode pins are clamped and fixed by the clamping electrodes.
  • the micro light-emitting device includes: the electrode pin clamped and fixed by the clamping electrode includes: a first electrode part and a second electrode part that are stacked, and the second electrode part passes through the The first electrode part is electrically connected to the body of the micro light-emitting device; the hardness of the second electrode part is less than the hardness of the first electrode part.
  • the clamping electrode clamps and fixes the corresponding second electrode part.
  • the micro-light emitting device includes: Micro-LED or Mini-LED.
  • the backplane is a display substrate or a light source assembly.
  • FIG. 1 is a schematic structural diagram of a display substrate with micro light-emitting devices involved in the related art.
  • FIG. 2 is a schematic structural diagram of a receiving substrate provided by an embodiment of the present disclosure.
  • Fig. 3 is a schematic structural diagram of a micro light-emitting device provided by an embodiment of the present disclosure.
  • FIG. 4 is a flowchart of a method for preparing a receiving substrate provided by an embodiment of the present disclosure.
  • FIG. 5 is a flowchart of a method for forming clamping electrodes according to an embodiment of the present disclosure.
  • 6a-6h are schematic diagrams of the structure of the receiving substrate in different stages of manufacturing according to an embodiment of the present disclosure.
  • FIG. 7a and FIG. 7b are schematic structural diagrams of the micro light emitting device binding process at different stages in an embodiment of the present disclosure.
  • FIG. 8a and 8b are perspective views of a part of the structure of the display substrate in the state shown in FIG. 7a.
  • the reference signs are: 10, base substrate; 11, connecting electrode; 12, first photoresist; 12a, region where the clamping electrode is to be formed; 13a, cylindrical electrode; 13', conductive material film; 131, bottom surface Conductive part; 132, side conductive part; 100a, the non-transmissive area of the mask; 100b, the transparent area of the mask; 14, the second photoresist; N, the cathode; P, the anode; 20, the body of the micro light emitting device 21a, the electrode pins of the existing micro light-emitting diode; 21, the electrode pins of the micro light-emitting device in the present disclosure; 211, the first electrode part; 212, the second electrode part.
  • the micro-light-emitting device involved in the present disclosure refers to a small-size light-emitting device, such as Micro-LED or Mini-LED.
  • the overall size of Micro-LED is usually below 50um, and the overall size of Mini-LED is usually between 100um and 200um.
  • Micro-LED will be taken as an example for an exemplary description.
  • micro light-emitting diodes in the related art are bound and fixed in a plug-in manner.
  • a microtube electrode made of hard metal material is arranged on the connecting electrode in the receiving substrate, and an electrode pin made of soft metal material is arranged on the micro light emitting diode (connected to the cathode or anode on the micro light emitting diode).
  • the microtube electrode is inserted into the electrode pin during the binding process, so as to realize the electrical connection between the connecting electrode and the micro light-emitting diode.
  • the microtube electrode it is found that when the microtube electrode is inserted into the electrode pin, the microtube electrode easily penetrates the electrode pin, thereby damaging the microlight emitting diode.
  • the display substrate involved in the related art includes a micro light-emitting device and a receiving substrate.
  • the micro light emitting device is composed of a micro light emitting device body 20 and electrode pins 21a (generally two, respectively connected to the cathode and anode of the micro light emitting device body 20).
  • the micro light emitting device body 20 is provided with a PN junction or a PIN junction.
  • the light-emitting structure and peripheral packaging materials, etc.; the electrode pins 21a are usually made of softer metal, such as aluminum.
  • the base substrate 10 in the receiving substrate is provided with signal traces (not shown), driving circuits (not shown), connection electrodes 11 and other structures, and the connection electrodes 11 are provided with cylindrical electrodes with top openings.
  • 13a i.e. microtube electrode
  • the cylindrical electrode 13a is formed of hard metal; when binding the micro light-emitting device, the hard cylindrical electrode 13a needs to be inserted into the soft electrode pin 21a.
  • the connecting electrode 11 may be a part of the end of the signal wiring, or may be an additional part provided and electrically connected to the signal wiring.
  • the receiving substrate includes: a base substrate 10 and a plurality of connecting electrodes 11 arranged on the base substrate 10. At least one connecting electrode 11 is provided with a clamping electrode 13b on the side facing away from the base substrate 10. The electrode 13b is electrically connected to the corresponding connecting electrode 11, and the clamping electrode is configured to clamp and fix the electrode pin of the micro light-emitting device.
  • FIG. 3 shows the structure of a lateral micro light emitting diode, which includes a micro light emitting device body 20 and two electrode pins 21 (that is, a cathode and an anode), and the two electrode pins 21 are located on the same side of the micro light emitting device body 20.
  • a lateral micro light emitting diode which includes a micro light emitting device body 20 and two electrode pins 21 (that is, a cathode and an anode), and the two electrode pins 21 are located on the same side of the micro light emitting device body 20.
  • the longitudinal micro light emitting diode its two electrode pins 21 are located on opposite sides of the micro light emitting device body 20.
  • the material of the base substrate 10 is, for example, glass.
  • the connection electrode 11 provided on the base substrate 10 is used to electrically connect with the electrode pins 21 of the micro light-emitting device that is subsequently bound on the receiving substrate, so as to provide driving signals for these electrode pins 21.
  • the present disclosure relates to the connection electrode 11
  • the specific structure is not limited.
  • the driving circuit (not shown) on the base substrate 10 can adopt an active driving structure or a passive driving structure.
  • the driving circuit can provide a driving signal to the connecting electrode 11 to drive the micro light-emitting device.
  • Both the active drive structure and the passive drive structure are existing structures, and will not be described in detail here.
  • the technical solution of the present disclosure designs the structure of the receiving substrate so that the receiving substrate is bound to the micro light-emitting device by clamping and fixing; specifically, the micro light-emitting device is bound by clamping and fixing by clamping electrodes
  • the electrode pins 21 of the micro-light emitting device are "clamped" by the clamping electrode.
  • the technical solution of the present disclosure can greatly reduce the risk of damage to the micro light-emitting device during the bonding process, thereby improving the process yield.
  • the clamping electrode 13b includes: a side conductive portion 132, the side conductive portion 132 extends in a direction away from the base substrate 10, and the side conductive portion 132 is inscribed with a plane parallel to the base substrate 10.
  • the angle is an acute angle.
  • the clamping electrode 13b forms a storage space with a small upper opening and a large bottom opening.
  • the electrode pins 21 of the micro-light-emitting device are subsequently bound, the electrode pins 21 of the micro-light-emitting device are aligned with the opening on the top of the clamping electrode 13b, and then the electrode pins 21 are inserted into the container. Space, so that the upper opening of the clamping electrode 13b can clamp and fix the electrode pin 21.
  • the length of the electrode pin 21 may be set to be relatively longer (the length of the electrode pin 21 is greater than the height of the side conductive portion 132), so that the electrode leads The foot 21 can touch the bottom of the clamping electrode 13b.
  • the bottom of the clamping electrode 13b and the body of the micro light-emitting device will press the electrode pin 21, making the electrode pin 21
  • the expansion and deformation of 21 occurs in the direction parallel to the plane of the base substrate 10 (the horizontal direction in FIGS.
  • the clamping and fixing of the electrode pin 21 by the clamping electrode 13b can be improved.
  • the side conductive portion 132 receives downward pressure from the micro light emitting device, the upper opening of the side conductive portion 132 will also move to the inside of the storage space, thereby further squeezing the electrode pins 21 contained therein, and further The firmness of clamping and fixing the counter electrode pin 21 is improved.
  • the inscribed angle In the process of designing and adjusting the inscribed angle, it is found that if the inscribed angle is too small, the area occupied by the side conductive portion 132 is too large, which greatly reduces the resolution of the receiving substrate; if the inscribed angle is too large, then The side conductive portion 132 is easily inserted into the micro light emitting device body 20, causing damage to the micro light emitting device body 20, and the storage space formed by the side conductive portion 132 is too large, the electrode pin 21 of the micro light emitting device requires too much deformation, and the process is realized The difficulty is too great. On the other hand, it is also necessary to consider the size parameters of the electrode pins 21 to be clamped and fixed.
  • the height of the electrode pin 21 to be clamped and fixed is relatively high, and the cross-sectional area is relatively small, and the above-mentioned inscribed angle is set relatively large.
  • the range of the inscribed angle includes: [60°, 70°].
  • the clamping electrode 13b further includes: a bottom conductive portion 131, the bottom conductive portion 131 is located between the side conductive portion 132 and the connection electrode 11; the side conductive portion 132 faces the end surface of the base substrate 10 and the bottom conductive portion 131 connection.
  • the bottom conductive portion 131 and the side conductive portion 132 connected to the bottom conductive portion 131 may be formed on the connection electrode 11.
  • the side conductive portion 132 may be formed only on the connection electrode 11.
  • the side conductive portion 132 and the bottom conductive portion 131 are integrally formed. In this way, the side electrically conductive portion 132 and the bottom conductive portion 131 can be formed by the same material layer, which simplifies the preparation process of the carrier substrate.
  • the orthographic projection of the side conductive portion 132 on the base substrate 10 is in a ring shape. That is, the storage space defined by the side conductive portion 132 has a truncated cone shape.
  • the orthographic projection of the side conductive portion 132 on the base substrate 10 is a ring with at least one gap, and the gap penetrates the inner and outer boundaries of the ring.
  • the side conductive portion 132 does not completely wrap the side surface of the storage space formed by the side conductive portion 132, as long as the side conductive portion 132 can clamp the electrode pin 21 of the micro light emitting device.
  • a clamping electrode 13 b is provided on the side of each connection electrode 11 facing away from the base substrate 10.
  • the embodiment of the present disclosure also provides a micro light-emitting device.
  • the micro light emitting device includes a micro light emitting device body 20 and a plurality of electrode pins 21 connected to the micro light emitting device body 20.
  • the number of electrode pins 21 is two.
  • the micro light emitting device The electrode pins 21 can be clamped and fixed by the aforementioned clamping electrode 13b.
  • the electrode pin 21 has a laminated structure; specifically, the laminated electrode pin 21 includes: a first electrode portion 211 and a second electrode portion 212 that are stacked, and the second electrode portion 212 passes through The first electrode part 211 is electrically connected to the micro light emitting device body 20, and the hardness of the second electrode part 212 is less than the hardness of the first electrode part 211.
  • the material of the second electrode part 212 includes aluminum, and the material of the first electrode part 211 includes at least one of nickel and molybdenum.
  • the second electrode portion 212 is used for clamping and fixing the electrode pins 21.
  • the electrode pins 21 and the micro light emitting device body 20 can be effectively prevented from contacting during the clamping of the second electrode portion 212, thereby better ⁇ Micro-light emitting device body 20.
  • the first electrode portion 211 is harder than the second electrode portion 212, when the electrode pin 21 is pressed in a direction perpendicular to the base substrate 10, the second electrode portion 212 is more prone to compression deformation.
  • the first electrode portion 211 can still maintain the original shape, which is equivalent to providing a "back seat" for the extrusion of the second electrode portion 211.
  • the orthographic projection of the second electrode portion 212 on the first electrode portion 211 is located in the first electrode portion 211, and the orthographic projection of the second electrode portion 212 on the first electrode portion 211 has a similarity to that of the first electrode portion 211. Non-overlapping area.
  • the orthographic projection of the second electrode portion 212 on the first electrode portion 211 is circular. That is, the second electrode portion 212 has a cylindrical shape.
  • the orthographic projection of the second electrode portion 212 on the first electrode portion 211 may also have other shapes such as a triangle or a rectangle.
  • an embodiment of the present disclosure also provides a method for preparing a receiving substrate, which includes the following steps S100 and 200.
  • a clamping electrode is formed on the side of the at least one connection electrode 11 facing away from the base substrate 10, the clamping electrode is electrically connected to the corresponding connection electrode 11, and the clamping electrode is configured to clamp and fix the electrode pins of the micro light-emitting device twenty one.
  • the receiving substrate prepared in this way can fix the electrode pins 21 of the micro light-emitting device by clamping and fixing, thereby avoiding damage to the micro light-emitting device.
  • the step S200 of forming a clamping electrode includes the following steps S201 to S204.
  • the first photoresist 12 is a negative photoresist.
  • FIG. 6a shows the receiving substrate before the negative photoresist is not coated
  • FIG. 6b shows the receiving substrate after S201 is completed.
  • the first photoresist 12 corresponding to the light-transmitting area 100b of the reticle will be retained after subsequent exposure and development.
  • the negative photoresist in the illuminated area undergoes a curing reaction.
  • the lower surface area is larger.
  • the non-transmissive area 100a of the reticle corresponds to the first photoresist 12 to be removed.
  • FIG. 6c shows the to-be-removed part 12a of the first photoresist 12 formed after development
  • FIG. 6d shows the first photoresist 12 after development.
  • the parameters in the exposure process and the development process can be adjusted at the same time to realize the control of the groove shape. For example, the light intensity in the exposure process is stronger, and the development time in the development process is longer. Then the inner cut angle formed by the sidewall of the first photoresist 12 and the plane parallel to the base substrate 10 will be Bigger.
  • the specific sputtering process can be used, and the thickness of the conductive material film 13' at the bottom of the slot is about The thickness of the conductive material film 13' on the sidewall of the slot is about In some embodiments, the material of the conductive material film 13' is aluminum.
  • the inscribed angle formed by the sidewall of the slot and the plane parallel to the base substrate 10 should not be designed to be too small. If it is too small, it is difficult to form the conductive material film 13' at the corner of the slot.
  • the bottom conductive portion 131 and the side conductive portion 132 of the clamping electrode can be formed at the same time, and the inscribed angle formed by the side conductive portion 132 and the bottom conductive portion 131 is an acute angle.
  • the bottom conductive portion 131 and the side conductive portion 132 are integrally formed.
  • the method further includes: removing the remaining first photoresist 12. In this way, it is convenient for the side conductive portion 132 to be more easily pressed by the aforementioned second electrode portion 212.
  • the step S204 of removing the conductive material film 13' on the side of the first photoresist 12 facing away from the base substrate 10 includes: step S2041 and step S2042, see FIGS. 6f-6h.
  • a plasma etching process (for example, an oxygen plasma etching process) is used to remove the second photoresist 14 with a predetermined thickness.
  • this step can also be replaced by the method of exposing and developing to remove the conductive material film 13' on the side of the first photoresist 12 facing away from the base substrate 10.
  • the remaining first photoresist 12 and the remaining second photoresist 14 can be removed at the same time.
  • the remaining first photoresist 12 and the remaining second photoresist 14 are removed by a combination of oxygen plasma etching and cleaning.
  • the embodiments of the present disclosure also provide a backplane, including the receiving substrate provided in the foregoing embodiments.
  • the backplane further includes: at least one micro light-emitting device provided in the foregoing embodiments, and at least one electrode pin 21 of the micro light-emitting device is clamped and fixed by a clamping electrode.
  • the micro light-emitting device includes: a light-emitting device body 20 and electrode pins 21.
  • the electrode pins 21 include: a first electrode portion 211 and a second electrode portion 212 that are stacked, and the second electrode The portion 212 is electrically connected to the body of the light emitting device through the first electrode portion 211; the hardness of the second electrode portion 212 is less than the hardness of the first electrode portion 211.
  • the hardness of the second electrode part 212 is less than the hardness of the clamping electrode.
  • the clamping electrode includes a side conductive portion 132, which abuts against the first electrode portion 211 but not the second electrode portion 212. Covered part.
  • the backplane with micro-light-emitting devices can be used as a display substrate, and all micro-light-emitting devices include micro-light-emitting devices capable of emitting different colors for image display.
  • the backplane with micro light-emitting devices can be used as a light source assembly (for example, a backlight, an illuminating lamp) to provide light.
  • a light source assembly for example, a backlight, an illuminating lamp
  • the embodiment of the present disclosure also provides a binding method of the micro light-emitting device, which is based on the receiving substrate and the micro light-emitting device provided in the foregoing embodiment.
  • the second electrode portion 212 of the micro light-emitting device is aligned with the opening area formed by the clamping electrode, and the top surface of the side conductive portion 132 is aligned with the second electrode portion on the first electrode portion 211
  • the non-overlapping area of 212 is opposite.
  • the micro light-emitting device and the receiving substrate are then pressed against each other to expand the end surface of the second electrode part 212 and press the first electrode part 211 and the side conductive part 132 against each other.
  • the duration of the pressing process needs to be relatively short, so that the second electrode portion 212 can be compressed and deformed significantly.
  • the specific process parameters can be determined through experiments. Since the side conductive portion 132 is relatively inclined, under the squeezing action of the first electrode portion 211, the degree of inclination of the side conductive portion 132 will increase, thereby further clamping the second electrode portion 212.
  • the side conductive part 132 is similar to a "clamp", and the first electrode part 211 makes it clamped.
  • the hardness of the first electrode part 211 is equal to or less than the hardness of the side conductive part 132.
  • the first electrode portion 211 can press down the inclined side conductive portion 132, and the side conductive portion 132 is relatively thin.
  • the first electrode portion 211 Should not be too hard. Even if the first electrode portion 211 is relatively soft, the side conductive portion 132 is inserted into the first electrode portion 211 obliquely, and it is not easy to penetrate the first electrode portion 211.
  • the hardness of the first electrode part 211 may also be slightly greater than the hardness of the side conductive part 132.
  • the technical solution of the present disclosure does not specifically limit the materials of the first electrode portion 211 and the second electrode portion 212, as long as the hardness thereof meets the hardness required by each embodiment of the present invention.
  • the size of the cathode N and the anode P of the horizontal micro-light emitting diode are the same, and the cross section of the first electrode part 211 is a rectangle of 11um ⁇ 6um, and the adjacent cathode N
  • the horizontal distance between the anode P and the anode P is 9 um
  • the overall cross-section of the micro light emitting diode body 20 is a rectangle of 25 um ⁇ 15 um
  • the short side of the first electrode portion 211 is opposite to the boundary of the micro light emitting diode body 20 by 2 um.
  • the dihedral angle (that is, the inscribed angle) a formed between the bottom conductive portion 131 and the side conductive portion 132 satisfies 60° ⁇ a ⁇ 70°;
  • the top opening of the side conductive portion 132 is circular,

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

一种承接基板,包括:衬底基板(10)和设置在所述衬底基板(10)上的多个连接电极(11),至少一个所述连接电极(11)背向所述衬底基板(10)的一侧设置有夹持电极(13b),所述夹持电极(13b)与对应的所述连接电极(11)电连接,所述夹持电极(13b)配置为能够夹持固定微发光器件的电极引脚(21a)。还提供了一种承接基板的制备方法和背板。

Description

承接背板及其制备方法、背板 技术领域
本公开涉及一种承接基板、一种承接基板的制备方法和一种背板。
背景技术
微发光二极管(MicroLED)是一种尺寸在几微米到几百微米之间的器件。在使用时,需先在供给基板上生长出微发光二极管,然后通过微转印技术将微发光二极管转移到有电路图案的承接基板上并进行绑定(Bonding)固定。
发明内容
本公开提供一种承接基板、一种承接基板的制备方法和一种背板。
第一方面,本公开实施例提供一种承接基板,其中,包括:衬底基板和设置在所述衬底基板上的多个连接电极,至少一个所述连接电极背向所述衬底基板的一侧设置有夹持电极,所述夹持电极与对应的所述连接电极电连接,所述夹持电极配置为能够夹持固定微发光器件的电极引脚。
在一些实施例中,所述夹持电极包括:侧面导电部,所述侧面导电部朝远离所述衬底基板的方向延伸,且所述侧面导电部与平行于所述衬底基板的平面所构成的内切角为锐角。
在一些实施例中,所述内切角的范围包括:[60°,70°]。
在一些实施例中,所述夹持电极还包括:底面导电部,所述底面导电部位于所述侧面导电部和所述连接电极之间;
所述侧面导电部朝向所述衬底基板的端面与所述底面导电部连接。
在一些实施例中,所述侧面导电部与所述底面导电部为一体成型结构。
在一些实施例中,所述侧面导电部在所述衬底基板的正投影呈环形。
在一些实施例中,所述侧面导电部在所述衬底基板的正投影为具有至少一个缺口的环形,所述缺口贯穿环的内边界和外边界。
在一些实施例中,每个所述连接电极背向所述衬底基板的一侧均设置有所述夹持电极。
在一些实施例中,所述夹持电极的材料包括:铝。
第二方面,本公开实施例还提供一种承接基板的制备方法,其中,包括:
在衬底基板上形成多个连接电极;
在至少一个所述连接电极背向所述衬底基板的一侧形成夹持电极,所述夹持电极与对应的所述连接电极电连接,所述夹持电极配置为能够夹持固定微发光器件的电极引脚。
在一些实施例中,形成夹持电极的步骤包括:
在所述衬底基板上以及所述连接电极背向所述衬底基板的一侧涂覆第一光刻胶,所述第一光刻胶为负性光刻胶;
对所述第一光刻胶进行曝光和显影以在待形成所述夹持电极的区域处形成开槽,所述第一光刻胶上围成所述开槽的侧壁与平行于所述衬底基板的平面所构成的内切角为锐角;
在所述第一光刻胶背向所述衬底基板的一侧以及所述开槽内形成导电材料薄膜;
去除所述导电材料薄膜位于第一光刻胶背向所述衬底基板的一侧的部分,所述导电材料薄膜位于所述开槽内的部分作为所述夹持电极。
在一些实施例中,在所述去除所述导电材料薄膜位于第一光刻胶背向所述衬底基板的一侧的部分的步骤之后还包括:
去除残留的所述第一光刻胶。
在一些实施例中,所述去除所述导电材料薄膜位于第一光刻胶背向所述衬底基板的一侧的部分的步骤包括:
在所述导电材料薄膜背向所述衬底基板一侧和所述开槽内涂覆第二光刻胶;
去除预定厚度的第二光刻胶,以暴露所述导电材料薄膜位于第一光 刻胶背向所述衬底基板的一侧的部分;
通过刻蚀工艺去除所述导电材料薄膜位于第一光刻胶背向所述衬底基板的一侧的部分。
在一些实施例中,采用等离子体刻蚀工艺去除预定厚度的所述第二光刻胶。
第三方面,本公开实施例还提供了一种背板,包括:本公开第一方面的承接基板。
在一些实施例中,还包括:至少一个微发光器件,所述微发光器件包括微发光器件本体和与所述微发光器件本体电连接的多个电极引脚,所述微发光器件的至少一个电极引脚由所述夹持电极夹持固定。
在一些实施例中,所述微发光器件包括:被所述夹持电极夹持固定的电极引脚包括:叠置的第一电极部和第二电极部,所述第二电极部通过所述第一电极部与所述微发光器件本体电连接;所述第二电极部的硬度小于所述第一电极部的硬度。
在一些实施例中,所述夹持电极夹持固定对应的第二电极部。
在一些实施例中,所述微发光器件包括:Micro-LED或Mini-LED。
在一些实施例中,所述背板为显示基板或光源组件。
附图说明
图1为相关技术中涉及的一种具有微发光器件的显示基板的结构示意图。
图2是本公开实施例提供的一种承接基板的结构示意图。
图3是本公开实施例提供的一种微发光器件的结构示意图。
图4是本公开实施例提供的一种承接基板的制备方法的流程图。
图5是本公开实施例提供的一种形成夹持电极的方法的流程图。
图6a-图6h是本公开实施例的承接基板在制造的不同阶段的结构示意图。
图7a和图7b是本公开实施例中进行微发光器件绑定工艺在不同阶段的结构示意图。
图8a和图8b是图7a所示状态下显示基板的部分结构的透视图。
附图标记为:10、衬底基板;11、连接电极;12、第一光刻胶;12a、待形成夹持电极的区域;13a、圆柱形电极;13'、导电材料薄膜;131、底面导电部;132、侧面导电部;100a、掩模版的非透光区;100b、掩模版的透光区;14、第二光刻胶;N、阴极;P、阳极;20、微发光器件本体;21a、现有微发光二极管的电极引脚;21、本公开中的微发光器件的电极引脚;211、第一电极部;212、第二电极部。
具体实施方式
为使本领域的技术人员更好地理解本公开的技术方案,下面结合附图对本公开提供的一种承接背板及其制备方法、背板进行详细描述。
在下文中将参考附图更充分地描述示例实施例,但是所述示例实施例可以以不同形式来体现且不应当被解释为限于本文阐述的实施例。反之,提供这些实施例的目的在于使本公开透彻和完整,并将使本领域技术人员充分理解本公开的范围。
本公开所使用的术语仅用于描述特定实施例,且不意欲限制本公开。如本文所使用的,单数形式“一个”和“该”也意欲包括复数形式,除非上下文另外清楚指出。还将理解的是,当本说明书中使用术语“包括”和/或“由……制成”时,指定存在所述特征、整体、步骤、操作、元件和/或组件,但不排除存在或添加一个或多个其他特征、整体、步骤、操作、元件、组件和/或其群组。
将理解的是,虽然本文可以使用术语第一、第二等来描述各种元件/部件/结构,但这些元件/部件/结构不应当受限于这些术语。这些术语仅用于区分一个元件/部件/结构和另一元件/部件/结构。
除非另外限定,否则本文所用的所有术语(包括技术和科学术语)的含义与本领域普通技术人员通常理解的含义相同。还将理解,诸如那些在常用字典中限定的那些术语应当被解释为具有与其在相关技术以及本公开的背景下的含义一致的含义,且将不解释为具有理想化或过度形式 上的含义,除非本文明确如此限定。
本公开中涉及的微发光器件是指小尺寸的发光器件,例如Micro-LED或Mini-LED,Micro-LED的整体尺寸通常在50um以下,Mini-LED的整体尺寸通常在100um-200um之间,本公开中将以Micro-LED为例进行示例性描述。
相关技术中的微发光二极管绑定固定采用插接方式。具体地,在承接基板中的连接电极上设置由硬质金属材料构成的微管电极,在微发光二极管上设置由软质金属材料构成的电极引脚(与微发光二极管上的阴极或阳极连接),在进行绑定工艺时将微管电极插入至电极引脚内,以实现连接电极与微发光二极管的电连接。然而在实际应用中发现,在将微管电极插入至电极引脚时,微管电极容易穿透电极引脚,从而损伤微发光二极管。
参见图1,相关技术所涉及的显示基板包括微发光器件和承接基板。其中,微发光器件由微发光器件本体20以及电极引脚21a(一般为2个,分别与微发光器件本体20的阴极和阳极连接)组成,微发光器件本体20内设置诸如PN结或PIN结的发光结构以及外围的封装材料等;电极引脚21a通常采用较软的金属构成,例如铝。
承接基板中的衬底基板10上设置有信号走线(未示出)、驱动电路(未示出)、连接电极11等结构,在连接电极11之上设置有具备顶面开口的圆柱形电极13a(即微管电极),圆柱形电极13a采用硬质的金属形成;在绑定微发光器件时,需将硬质的圆柱形电极13a插入软质的电极引脚21a中。
其中,连接电极11可以为信号走线的端部的部分,也可以是一个额外设置且与信号走线电连接的部分。
在绑定过程中,由于所施加的压力以及圆柱形电极13a插入至电极引脚21a的深度难以控制,因而容易出现圆柱形电极13a穿透电极引脚21a,进而损伤微发光器件本体。
为解决上述技术问题,本公开实施例提供了一种承接基板。参见图2,承接基板包括:衬底基板10和设置在衬底基板10上的多个连接电极11,至少一个连接电极11背向衬底基板10的一侧设置有夹持电极13b, 夹持电极13b与对应的连接电极11电连接,夹持电极配置为能够夹持固定微发光器件的电极引脚。
本公开实施例涉及的承接基板用于承接微发光器件;其中,微发光器件可以是横向微发光二极管或者是纵向微发光二极管。图3示出的是横向微发光二极管的结构,其包括微发光器件本体20和两个电极引脚21(即阴极和阳极),两个电极引脚21位于微发光器件本体20的同一侧。对于纵向微发光二极管,其两个电极引脚21位于微发光器件本体20的相对侧。
衬底基板10的材料例如是玻璃。衬底基板10上设置的连接电极11用于与后续绑定在该承接基板上的微发光器件的电极引脚21电连接,从而为这些电极引脚21提供驱动信号,本公开对连接电极11的具体结构不做限定。
衬底基板10上的驱动电路(未示出)可以采用有源驱动结构或者是无源驱动结构,通过驱动电路可以为连接电极11提供驱动信号,以驱动微发光器件。有源驱动结构和无源驱动结构均为现有结构,此处不进行详细描述。
本公开的技术方案通过对承接基板的结构进行设计,以使得承接基板采用夹持固定的方式与微发光器件实现绑定;具体地,采用夹持电极以夹持固定的方式绑定微发光器件的电极引脚21,即夹持电极将微发光器件的电极引脚21“夹住”。,相较于相关技术中插接绑定的方式,本公开的技术方案可大大降低绑定工艺过程中对微发光器件造成损伤的风险,从而能提升工艺良品率。
在一些实施例中,夹持电极13b包括:侧面导电部132,侧面导电部132朝远离衬底基板10的方向延伸,且侧面导电部132与平行于衬底基板10的平面所构成的内切角为锐角。
继续参见图2,夹持电极13b形成一上部开口小而底部开口大的收纳空间。参见图7a和图7b,在后续绑定微发光器件的电极引脚21时,将微发光器件的电极引脚21对准夹持电极13b顶部的开口,随后将该电极引脚21插入该收纳空间,以使得夹持电极13b的上部开口能够对电极引脚21进行夹持固定。
继续参见图7a和图7b,在一些实施例中,可将挤压该电极引脚21的长度设置的相对较长一些(电极引脚21的长度大于侧面导电部132的高度),使得电极引脚21能够触及夹持电极13b的底部。在将电极引脚21插入该收纳空间过程中,当电极引脚21接触夹持电极13b的底部时,夹持电极13b的底部以及微发光器件本体会挤压电极引脚21,使得电极引脚21在与衬底基板10所处平面平行的方向(附图7a和7b中的水平方向)上发生膨胀变形,此时可提升夹持电极13b对电极引脚21夹持固定的牢固程度。与此同时,当侧面导电部132受到来自于微发光器件向下的压力时,侧面导电部132的上部开口也会向收纳空间内侧运动,从而进一步挤压其内收纳的电极引脚21,进一步提升对对电极引脚21夹持固定的牢固程度。
在对内切角进行设计、调整过程中发现:如该内切角过小,则侧面导电部132占用的面积过大,极大降低承接基板的分辨率;如该内切角过大,则侧面导电部132容易插入微发光器件本体20,对微发光器件本体20造成损伤,且侧面导电部132形成的收纳空间过大,微发光器件的电极引脚21需要的形变量过大,工艺实现难度过大。另一方面,还需要考虑待夹持固定的电极引脚21的尺寸参数。例如待夹持固定的电极引脚21的高度比较高,横截面积比较小,则上述内切角设置的比较大。考虑到上述因素,在一些实施例中,内切角的范围包括:[60°,70°]。
在一些实施例中,夹持电极13b还包括:底面导电部131,底面导电部131位于侧面导电部132和连接电极11之间;侧面导电部132朝向衬底基板10的端面与底面导电部131连接。
即可以在连接电极11之上形成底面导电部131和与底面导电部131相连的侧面导电部132。当然,也可以仅在连接电极11之上形成侧面导电部132。
在一些实施例中,侧面导电部132与底面导电部131为一体成型结构。如此,侧面电导电部132和底面导电部131可通过同一材料层形成,简化承载基板的制备工艺。
在一些实施例中,参见图8a,侧面导电部132在衬底基板10的正投影呈环形。即侧面导电部132限定的收纳空间呈圆台状。
在一些实施例中,参见8b,侧面导电部132在衬底基板10的正投影为具有至少一个缺口的环形,缺口贯穿环的内边界和外边界。侧面导电部132并非将其形成的收纳空间的侧面完全包裹,只要侧面导电部132能够夹住微发光器件的电极引脚21即可。
在一些实施例中,每个连接电极11背向衬底基板10的一侧均设置有夹持电极13b。
本公开实施例还提供一种微发光器件。参见图3,该微发光器件包括微发光器件本体20以及与微发光器件本体20相连的多个电极引脚21,在一些实施例中,电极引脚21的数量为两个,该微发光器件的电极引脚21可被前述的夹持电极13b所夹持固定。
在一些实施例中,电极引脚21为叠层状结构;具体地,叠层状的电极引脚21包括:叠置的第一电极部211和第二电极部212,第二电极部212通过第一电极部211与微发光器件本体20电连接,第二电极部212的硬度小于第一电极部211的硬度。
在一些实施例中,第二电极部212的材料包括铝,第一电极部211的材料包括镍和钼中至少一者。
在绑定过程中,第二电极部212用于供电极引脚21进行夹持固定。通过在第二电极部212之间设置相对较硬的第一电极部211,可有效避免在夹持第二电极部212的过程中电极引脚21与微发光器件本体20相接触,从而更好的保护微发光器件本体20。与此同时,由于第一电极部211比第二电极部212更硬,因此在垂直于衬底基板10的方向上挤压该电极引脚21时,第二电极部212更容易发生挤压形变,第一电极部211仍能保持原有形状,即相当于为第二电极部211的挤压提供了一个“后座”。
在一些实施例中,第二电极部212在第一电极部211的正投影位于第一电极部211内,并且第二电极部212在第一电极部211的正投影与第一电极部211具有非交叠区域。在绑定过程中,当侧面导电部132的上部开口与第二电极部212相接触且微发光器件仍继续下压时,受到来自于第一电极部211向下的压力时,侧面导电部132的上部开口也会向收纳空间内侧运动,从而进一步挤压其内收纳的电极引脚21,进一步提 升对对电极引脚21夹持固定的牢固程度。
由此可见,在绑定过程中,即便施加至微发光器件的压力过大或微发光器件下移距离过大,夹持电极13也不会与微发光器件本体20相接触,可有效防止微发光器件本体20被损伤。
在一些实施例中,第二电极部212在第一电极部211的正投影呈圆形。即第二电极部212呈圆柱形。当然,第二电极部212在第一电极部211的正投影也可是三角形、矩形等其他形状。
参见图4,本公开的实施例还提供一种承接基板的制备方法,其中,包括:下述步骤S100和步骤200。
S100、在衬底基板10上形成多个连接电极11;
S200、在至少一个连接电极11背向衬底基板10的一侧形成夹持电极,夹持电极与对应的连接电极11电连接,夹持电极配置为能够夹持固定微发光器件的电极引脚21。
如此方法制得的承接基板可通过夹持固定的方式固定微发光器件的电极引脚21,从而避免了对微发光器件的损伤。
在一些实施例中,参见图5,形成夹持电极的步骤S200包括以下步骤S201~S204。
S201、在衬底基板10上以及连接电极11背向衬底基板10的一侧涂覆第一光刻胶12,第一光刻胶12为负性光刻胶。
参见图6a和图6b,图6a示出的是未涂覆负性光刻胶前的承接基板,图6b示出的是S201完成后的承接基板。
S202、对第一光刻胶12进行曝光和显影以在待形成夹持电极的区域12a处形成开槽,第一光刻胶12上围成开槽的侧壁与平行于衬底基板10的平面所构成的内切角为锐角。
参见图6c和图6d,掩模版的透光区100b对应的第一光刻胶12后续经曝光和显影后会被保留下来。
由于采用负性光刻胶,被光照的区域负性光刻胶发生固化反应,越远离负性光刻胶的表面射入的光越弱,故越远离光刻胶的表面发生固化反应的负性光刻胶的面积越小,未发生固化反应的负性光刻胶(后续会被显影工艺去除)的面积越大,造成了显影后保留部分的第一光刻胶12 的上表面面积比其下表面面积更大。掩模版的非透光区100a对应待去除的第一光刻胶12,自然被显影去除的第一光刻胶12的部分上表面面积比其下表面面积更小,从而形成槽口比槽底更小的开槽。图6c中示出了显影后形成的第一光刻胶12的待去除部分12a,图6d示出的是显影后的第一光刻胶12。
可以同时调整曝光工艺和显影工艺中的参数实现对开槽形状的控制。例如在曝光工艺中的光强更强,显影工艺中显影时间更长,则第一光刻胶12上围成开槽的侧壁与平行于衬底基板10的平面所构成的内切角会更大。
S203、在第一光刻胶12背向衬底基板10的一侧以及开槽内形成导电材料薄膜13'。
参见图6e,具体可采用溅射的工艺,位于开槽底部的导电材料薄膜13'厚度约为
Figure PCTCN2019114767-appb-000001
位于开槽侧壁上的导电材料薄膜13'厚度约为
Figure PCTCN2019114767-appb-000002
在一些实施例中,导电材料薄膜13'的材料是铝。当然,开槽的侧壁与平行于衬底基板10的平面所构成的内切角不宜设计地太小,太小则开槽角落处不易形成导电材料薄膜13'。
S204、去除导电材料薄膜13'位于第一光刻胶12背向衬底基板10的一侧的部分,导电材料薄膜13'位于开槽内的部分作为夹持电极。
基于步骤S204可同时形成了夹持电极的底面导电部131和侧面导电部132,并且侧面导电部132与底面导电部131形成的内切角为锐角。其中,底面导电部131和侧面导电部132为一体成型结构。
在一些实施例中,在去除导电材料薄膜13'位于第一光刻胶12背向衬底基板10的一侧的部分的步骤之后还包括:去除残留的第一光刻胶12。如此,便于侧面导电部132更容易被前述的第二电极部212按压。
在一些实施例中,去除导电材料薄膜13'位于第一光刻胶12背向衬底基板10的一侧的部分的步骤S204包括:步骤S2041和步骤S2042,参见图6f~6h。
S2041、在导电材料薄膜13'背向衬底基板10一侧和开槽内涂覆第二光刻胶14。
S2042、去除预定厚度的第二光刻胶14,以暴露导电材料薄膜13' 位于第一光刻胶12背向衬底基板10的一侧的部分。
在一些实施例中,采用等离子体刻蚀工艺(例如氧气等离子体刻蚀工艺)去除预定厚度的第二光刻胶14。当然,该步骤也可以是替换为采用曝光显影的方式去除第一光刻胶12背向衬底基板10一侧的导电材料薄膜13'。
S2042、通过刻蚀工艺去除导电材料薄膜13'位于第一光刻胶12背向衬底基板10的一侧的部分。
可以同时去除残留的第一光刻胶12和残留的第二光刻胶14。例如是通过氧气等离子体刻蚀结合清洗的步骤将残留的第一光刻胶12和残留的第二光刻胶14去除。
本公开实施例还提供提供了一种背板,包括:前述实施例提供的承接基板。
在一些实施例中,背板还包括:至少一个前述实施例提供的微发光器件,微发光器件的至少一个电极引脚21由夹持电极夹持固定。
在一些实施例中,继续参见图7b,微发光器件包括:发光器件本体20和电极引脚21,电极引脚21包括:叠置的第一电极部211和第二电极部212,第二电极部212通过第一电极部211与发光器件本体电连接;第二电极部212的硬度小于第一电极部211的硬度。
在一些实施例中,第二电极部212的硬度小于夹持电极的硬度。
在一些实施例中,第二电极部212与第一电极部211存在非交叠区域,夹持电极包括侧面导电部132,侧面导电部132抵在第一电极部211未被第二电极部212覆盖的部分。
在一些实施例中,具有微发光器件的背板可作为显示基板,全部微发光器件包括能够发出不同颜色的微发光器件,用于进行画面显示。
在一些实施例中,具有微发光器件的背板可作为光源组件(例如背光源、照明灯),用于提供光线。
本公开实施例还提供一种微发光器件的绑定方法,该绑定方法基于前述实施例提供的承接基板和微发光器件。
如图7a所示,首先,将微发光器件的第二电极部212对准夹持电极形成的开口区域,且使侧面导电部132的顶面与第一电极部211上的和 第二电极部212的非交叠区域相对。
如图7b所示,然后,相互挤压微发光器件与承接基板以使第二电极部212的端面膨胀且使第一电极部211与侧面导电部132相互挤压。
挤压过程持续的时间需要相对较短,从而使得第二电极部212能够受压而发生明显的形变。具体的工艺参数可通过实验确定。由于侧面导电部132是相对倾斜的,在第一电极部211的挤压作用下,侧面导电部132的倾斜程度会增大,从而进一步夹紧第二电极部212。侧面导电部132类似于一个“夹子”,第一电极部211使其变得夹紧。
在一些实施例中,第一电极部211的硬度等于或小于侧面导电部132的硬度。在绑定过程中,第一电极部211可对倾斜的侧面导电部132下压,而侧面导电部132相对较薄,为防止绑定过程中侧面导电部132变形或破裂,第一电极部211不宜过硬。即使第一电极部211相对较软,侧面导电部132也是倾斜地插入第一电极部211,也不容易出现穿透第一电极部211的状况。当然,在一些实施例中,第一电极部211的硬度也可以稍大于侧面导电部132的硬度。
本公开的技术方案对于第一电极部211和第二电极部212的材料不做特别限定,只要其硬度符合本发明各实施例所要求的硬度即可。
在一个具体实例中,继续参见如图7a至图8b,水平型的微发光二极管的阴极N和阳极P的尺寸相同,其中第一电极部211的截面为11um×6um的矩形,相邻阴极N和阳极P之间的水平间距为9um,微发光二极管本体20整体截面为25um×15um的矩形,第一电极部211的短边距离相对的微发光二极管本体20的边界2um。第二电极部212的截面呈圆形,直径d1=3um,第二电极部212的厚度h1=2.5um。在绑定前,底面导电部131和侧面导电部132二者之间形成的二面角(即内切角)a满足60°≤a≤70°;侧面导电部132的顶端开口呈圆形,顶端开口直径d2=4um,侧面导电部132距离底面导电部131的垂直距离h2=2um,侧面导电部132的底部也呈圆形,直径为d3,其中
Figure PCTCN2019114767-appb-000003
当微发光二极管对侧面导电部132施加下压力F时,则在垂直于侧面导电部132的方向上的 分力F'=F*cosa,在该分力F'的作用下侧面导电部132发生形变,二面角a会略有减小。采用该绑定方法,侧面导电部132能够夹紧第二电极部212,且不容易刺穿第一电极部211,提高工艺的良率。
可以理解的是,以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式,然而本公开并不局限于此。对于本领域内的普通技术人员而言,在不脱离本公开的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本公开的保护范围。

Claims (20)

  1. 一种承接基板,其中,包括:衬底基板和设置在所述衬底基板上的多个连接电极,至少一个所述连接电极背向所述衬底基板的一侧设置有夹持电极,所述夹持电极与对应的所述连接电极电连接,所述夹持电极配置为夹持固定微发光器件的电极引脚。
  2. 根据权利要求1所述的承接基板,其中,所述夹持电极包括:侧面导电部,所述侧面导电部朝远离所述衬底基板的方向延伸,且所述侧面导电部与平行于所述衬底基板的平面所构成的内切角为锐角。
  3. 根据权利要求2所述的承接基板,其中,
    所述内切角的范围包括:[60°,70°]。
  4. 根据权利要求2所述的承接基板,其中,所述夹持电极还包括:底面导电部,所述底面导电部位于所述侧面导电部和所述连接电极之间;
    所述侧面导电部朝向所述衬底基板的端面与所述底面导电部连接。
  5. 根据权利要求4所述的承接基板,其中,所述侧面导电部与所述底面导电部为一体成型结构。
  6. 根据权利要求2所述的承接基板,其中,所述侧面导电部在所述衬底基板的正投影呈环形。
  7. 根据权利要求2所述的承接基板,其中,所述侧面导电部在所述衬底基板的正投影为具有至少一个缺口的环形,所述缺口贯穿环的内边界和外边界。
  8. 根据权利要求1所述的承接基板,其中,每个所述连接电极背向 所述衬底基板的一侧均设置有所述夹持电极。
  9. 根据权利要求1-8中任一所述的承接基板,其中,所述夹持电极的材料包括:铝。
  10. 一种承接基板的制备方法,其中,包括:
    在衬底基板上形成多个连接电极;
    在至少一个所述连接电极背向所述衬底基板的一侧形成夹持电极,所述夹持电极与对应的所述连接电极电连接,所述夹持电极配置为夹持固定微发光器件的电极引脚。
  11. 根据权利要求10所述的制备方法,其中,形成夹持电极的步骤包括:
    在所述衬底基板上以及所述连接电极背向所述衬底基板的一侧涂覆第一光刻胶,所述第一光刻胶为负性光刻胶;
    对所述第一光刻胶进行曝光和显影以在待形成所述夹持电极的区域处形成开槽,所述第一光刻胶上围成所述开槽的侧壁与平行于所述衬底基板的平面所构成的内切角为锐角;
    在所述第一光刻胶背向所述衬底基板的一侧以及所述开槽内形成导电材料薄膜;
    去除所述导电材料薄膜位于第一光刻胶背向所述衬底基板的一侧的部分,所述导电材料薄膜位于所述开槽内的部分作为所述夹持电极。
  12. 根据权利要求11所述的制备方法,其中,在所述去除所述导电材料薄膜位于第一光刻胶背向所述衬底基板的一侧的部分的步骤之后还包括:
    去除残留的所述第一光刻胶。
  13. 根据权利要求11所述的制备方法,其中,所述去除所述导电材料薄膜位于第一光刻胶背向所述衬底基板的一侧的部分的步骤包括:
    在所述导电材料薄膜背向所述衬底基板一侧和所述开槽内涂覆第二光刻胶;
    去除预定厚度的第二光刻胶,以暴露所述导电材料薄膜位于第一光刻胶背向所述衬底基板的一侧的部分;
    通过刻蚀工艺去除所述导电材料薄膜位于第一光刻胶背向所述衬底基板的一侧的部分。
  14. 根据权利要求13所述的制备方法,其中,采用等离子体刻蚀工艺去除预定厚度的所述第二光刻胶。
  15. 一种背板,其中,包括:如权利要求1-9中任意一项所述的承接基板。
  16. 根据权利要求15所述的背板,其中,还包括:至少一个微发光器件,所述微发光器件包括微发光器件本体和与所述微发光器件本体电连接的多个电极引脚,所述微发光器件的至少一个电极引脚由所述夹持电极夹持固定。
  17. 根据权利要求16所述的背板,其中,被所述夹持电极夹持固定的电极引脚包括:叠置的第一电极部和第二电极部,所述第二电极部通过所述第一电极部与所述微发光器件本体电连接;所述第二电极部的硬度小于所述第一电极部的硬度。
  18. 根据权利要求17所述的背板,其中,所述夹持电极夹持固定对应的所述第二电极部。
  19. 根据权利要求16所述的背板,其中,所述微发光器件包括:Micro-LED或Mini-LED。
  20. 根据权利要求16所述的背板,其中,所述背板为显示基板或光 源组件。
PCT/CN2019/114767 2019-10-31 2019-10-31 承接背板及其制备方法、背板 WO2021081906A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US17/043,937 US20230131247A1 (en) 2019-10-31 2019-10-31 Supporting backplane, manufacturing method therefor and backplane
CN201980002236.XA CN113133327B (zh) 2019-10-31 2019-10-31 承接背板及其制备方法、背板
PCT/CN2019/114767 WO2021081906A1 (zh) 2019-10-31 2019-10-31 承接背板及其制备方法、背板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/114767 WO2021081906A1 (zh) 2019-10-31 2019-10-31 承接背板及其制备方法、背板

Publications (1)

Publication Number Publication Date
WO2021081906A1 true WO2021081906A1 (zh) 2021-05-06

Family

ID=75714801

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/114767 WO2021081906A1 (zh) 2019-10-31 2019-10-31 承接背板及其制备方法、背板

Country Status (3)

Country Link
US (1) US20230131247A1 (zh)
CN (1) CN113133327B (zh)
WO (1) WO2021081906A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113725253A (zh) * 2021-08-31 2021-11-30 上海天马微电子有限公司 显示面板和显示装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI731712B (zh) * 2020-06-12 2021-06-21 友達光電股份有限公司 發光裝置及發光裝置的製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150235984A1 (en) * 2012-09-24 2015-08-20 National Institute Of Advanced Industrial Science And Technology Method of Manufacturing Semiconductor Device and Semiconductor Device Manufacturing Apparatus
CN106057771A (zh) * 2015-04-06 2016-10-26 爱思开海力士有限公司 具有插座插头互连结构的半导体封装
US9978710B2 (en) * 2015-12-24 2018-05-22 Imec Vzw Method for self-aligned solder reflow bonding and devices obtained thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5457879A (en) * 1994-01-04 1995-10-17 Motorola, Inc. Method of shaping inter-substrate plug and receptacles interconnects
DE19927749A1 (de) * 1999-06-17 2000-12-28 Siemens Ag Elektronische Anordnung mit flexiblen Kontaktierungsstellen
DE102012201935A1 (de) * 2012-02-09 2013-08-14 Robert Bosch Gmbh Verbindungsanordnung eines elektrischen und/oder elektronischen Bauelements
TWI691104B (zh) * 2018-07-18 2020-04-11 友達光電股份有限公司 發光裝置及其製造方法
CN110190068B (zh) * 2019-05-21 2020-12-08 深圳市华星光电半导体显示技术有限公司 显示面板和显示面板的制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150235984A1 (en) * 2012-09-24 2015-08-20 National Institute Of Advanced Industrial Science And Technology Method of Manufacturing Semiconductor Device and Semiconductor Device Manufacturing Apparatus
CN106057771A (zh) * 2015-04-06 2016-10-26 爱思开海力士有限公司 具有插座插头互连结构的半导体封装
US9978710B2 (en) * 2015-12-24 2018-05-22 Imec Vzw Method for self-aligned solder reflow bonding and devices obtained thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113725253A (zh) * 2021-08-31 2021-11-30 上海天马微电子有限公司 显示面板和显示装置
CN113725253B (zh) * 2021-08-31 2024-05-10 上海天马微电子有限公司 显示面板和显示装置

Also Published As

Publication number Publication date
CN113133327B (zh) 2024-01-26
US20230131247A1 (en) 2023-04-27
CN113133327A (zh) 2021-07-16

Similar Documents

Publication Publication Date Title
US10355166B2 (en) Light-emitting diode structure, transfer assembly, and transfer method using the same
US8368097B2 (en) Light emitting diode package and method of manufacturing the same
TWI520380B (zh) 發光裝置封裝及具有發光裝置封裝的光源單元
WO2021081906A1 (zh) 承接背板及其制备方法、背板
JP2017028328A (ja) Ledモジュールを製造する方法
CN107112385B (zh) 电子器件、光电子器件、器件装置和用于制造电子器件的方法
JP7108203B2 (ja) 発光モジュールの製造方法
JP6912730B2 (ja) 発光モジュールの製造方法
JP6782579B2 (ja) 発光装置
KR101039974B1 (ko) 발광소자, 발광 소자 제조방법 및 발광 소자 패키지
CN113690264A (zh) 驱动背板、显示装置和驱动背板的制作方法
CN114624806A (zh) 发光模块
CN113178411A (zh) 转移基板
KR20160040384A (ko) 발광장치
JP7228130B2 (ja) 保持部材、転写部材、転写部材の製造方法及び発光基板の製造方法
KR100808644B1 (ko) 표면 실장형 발광 다이오드 램프 및 그 제조 방법
JP6963183B2 (ja) 発光モジュールの製造方法
CN108417674B (zh) 制造发光二极管器件的方法及制造的发光二极管器件
US8933474B2 (en) Light emitting diode package and manufacturing method thereof
CN113035913B (zh) 一种显示面板的制备方法、显示面板及显示装置
CN212623467U (zh) 光源透镜及包括该光源透镜的光源模块
JP7223310B2 (ja) 保持部材、転写部材、転写部材の製造方法及び発光基板の製造方法
JP2022014690A (ja) 保持部材、転写部材、転写部材の製造方法及び発光基板の製造方法
EP2405501B1 (en) Molded light emitting device package
CN216354283U (zh) 一种led芯片和led组件

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19950300

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19950300

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 19950300

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 06.02.2023)

122 Ep: pct application non-entry in european phase

Ref document number: 19950300

Country of ref document: EP

Kind code of ref document: A1