WO2019102657A1 - リフトピン及び真空処理装置 - Google Patents
リフトピン及び真空処理装置 Download PDFInfo
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- WO2019102657A1 WO2019102657A1 PCT/JP2018/029408 JP2018029408W WO2019102657A1 WO 2019102657 A1 WO2019102657 A1 WO 2019102657A1 JP 2018029408 W JP2018029408 W JP 2018029408W WO 2019102657 A1 WO2019102657 A1 WO 2019102657A1
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- substrate
- lift pin
- lift
- surrounding
- central
- Prior art date
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- 238000009489 vacuum treatment Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 166
- 230000003746 surface roughness Effects 0.000 claims abstract description 38
- 230000002093 peripheral effect Effects 0.000 claims abstract description 32
- 238000012545 processing Methods 0.000 claims description 25
- 238000010292 electrical insulation Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 49
- 238000012986 modification Methods 0.000 description 38
- 230000004048 modification Effects 0.000 description 38
- 239000000463 material Substances 0.000 description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 28
- 229910052782 aluminium Inorganic materials 0.000 description 28
- 238000011156 evaluation Methods 0.000 description 28
- 239000000919 ceramic Substances 0.000 description 26
- 238000009826 distribution Methods 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- IUVCFHHAEHNCFT-INIZCTEOSA-N 2-[(1s)-1-[4-amino-3-(3-fluoro-4-propan-2-yloxyphenyl)pyrazolo[3,4-d]pyrimidin-1-yl]ethyl]-6-fluoro-3-(3-fluorophenyl)chromen-4-one Chemical compound C1=C(F)C(OC(C)C)=CC=C1C(C1=C(N)N=CN=C11)=NN1[C@@H](C)C1=C(C=2C=C(F)C=CC=2)C(=O)C2=CC(F)=CC=C2O1 IUVCFHHAEHNCFT-INIZCTEOSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 206010052428 Wound Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
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- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Definitions
- the present invention relates to a lift pin and a vacuum processing apparatus.
- Priority is claimed on Japanese Patent Application No. 2017-223792, filed Nov. 21, 2017, the content of which is incorporated herein by reference.
- lift pins which transfer a substrate between a transfer arm and a substrate holder when transporting a substrate to be processed in a vacuum processing apparatus.
- the lift pins are provided inside the substrate holder on which the substrate is mounted, and deliver the substrate by protruding from the surface of the substrate holder.
- a lift pin in which the corner portion of the lift pin is rounded is proposed (see Patent Document 1).
- a ceramic is generally used by the point of intensity
- the substrate holder includes a substrate mounting surface on which the substrate is mounted, and a plurality of opening holes opened in the substrate mounting surface.
- the number and position of the plurality of opening holes correspond to the number and position of the lift pins.
- the lift pins move up and down relatively inside the opening so as to penetrate the substrate holder to lift the substrate or place the substrate on the upper surface of the substrate holder.
- the electric lines of force and the temperature in the region where the opening hole is formed are locally different compared to the region where the opening hole is not formed. Due to this, there is a problem that the plasma generated on the surface of the substrate placed on the substrate placement surface becomes nonuniform.
- the plasma becomes nonuniform, the film thickness distribution on the substrate subjected to the process such as film formation or etching becomes nonuniform, or the etching uniformity deteriorates. As a result, failure of a device provided with a TFT (Thin Film Transistor) or the like formed on a substrate is caused.
- TFT Thin Film Transistor
- the present invention has been made in consideration of such circumstances, and is provided with a lift pin capable of suppressing generation of a scratch on the back surface of the substrate and achieving uniformity of plasma generated on the surface of the substrate, and the lift pin. It aims at providing a vacuum processing device.
- the inventors of the present invention have found that, in the case of the lift pin disclosed in Patent Document 1, the occurrence of scratches on the back surface of the substrate is suppressed by the R processing, but the R processed portion It was found that the gap between the lift pins and the substrate became large at the point where the plasma became nonuniform. Furthermore, the present inventors have conceived that it is difficult to perform film formation having a uniform film thickness distribution or to perform uniform etching due to non-uniform plasma.
- a lift pin has a first surface having a first surface roughness and an electrical insulating portion, and a main body which is a conductive member, and a central member facing a substrate, the first surface A second surface having a second surface roughness smaller than the roughness and an electrical insulation, surrounding the center member and facing the substrate.
- the surrounding member may be an electrical insulating member.
- the surrounding member may be a conductive member.
- the central member and the peripheral member may be an integral part formed of a conductive member.
- the central position of the central member on the first surface is located outside the end position of the peripheral member on the second surface in the extending direction of the lift pin.
- the first and second surfaces may have curved surfaces.
- the corner located between the outer surface of the peripheral member and the second surface of the peripheral member may have a curved surface.
- the first surface and the second surface may be capable of contacting the substrate.
- a vacuum processing apparatus includes a vacuum chamber, a substrate mounting surface on which a substrate is mounted, and an opening hole opened to the substrate mounting surface, and is disposed in the vacuum chamber. And a lift pin according to the first aspect described above, which is provided at a position corresponding to the opening hole and can be vertically moved up and down inside the opening hole, and generates plasma in the vacuum chamber A high frequency power supply and an elevating mechanism for moving the lift pin up and down relative to the substrate holder.
- FIG. 1 is a cross-sectional view partially showing a vacuum processing apparatus according to an embodiment of the present invention. It is a top view which shows the board
- FIGS. 1 to 5 A lift pin and a vacuum processing apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 to 5.
- the scale of each member is appropriately changed in order to make each member have a recognizable size.
- the vacuum processing apparatus 100 includes a vacuum chamber 10, a heater 20 (substrate holder), a high frequency power source 30, an elevating mechanism 40, a lift pin 50, and a vacuum pump 60. , Gas supply unit 70, and a door valve 80.
- the vacuum chamber 10 comprises a lower chamber 11, an upper chamber 12, and an electrode flange 13 sandwiched between the lower chamber 11 and the upper chamber 12.
- the heater 20 is disposed in the vacuum chamber 10 and is formed of aluminum which is a conductive member.
- the heater 20 has a substrate mounting surface 21 on which the substrate S is mounted, and a plurality of opening holes 22 penetrating the heater 20 and opening in the substrate mounting surface 21.
- a heater base 23 is provided on the back surface of the heater 20 located opposite to the substrate mounting surface 21.
- a lift pin 50 which will be described later, is disposed (stored) inside the opening 22.
- the lift pin 50 can move up and down in the opening 22.
- a bushing (not shown) that promotes smooth vertical movement of the lift pin 50 and a bushing bolt that fixes the bushing to the aperture 22 are provided inside the aperture 22.
- the opening hole 22 has an upper opening 22U opened to the substrate mounting surface 21 and a lower opening 22L located below the upper opening 22U.
- the diameter of the upper opening 22U is slightly larger than the diameter of the peripheral member 52 of the lift pin 50, for example, 10.5 mm.
- the diameter of the lower opening 22L is slightly larger than the diameter of the cylindrical member 54 of the lift pin 50, for example, 7.5 mm.
- the depth 22D of the upper opening 22U is slightly larger than the length of the peripheral member 52 of the lift pin 50 and the ring member 53, for example, 6.5 mm.
- FIG. 2 shows a substrate S mounted on the substrate mounting surface 21 of the heater 20 and positions P of a plurality of lift pins 50 for moving the substrate S up and down. Since the lift pin 50 is disposed in the opening hole 22, the position (center position) of the opening hole 22 corresponds to the position P.
- the substrate S includes ten lift pins 50 (position PL) near the long side SL of the substrate S, six lift pins 50 (position PS) near the short side SS of the substrate S, and the approximate center of the substrate S It can be raised and lowered by two positioned lift pins 50 (position PC), that is, a total of 18 lift pins 50.
- the position PL of the lift pin 50 closest to the long side SL of the substrate S is separated from the end of the long side SL of the substrate S by a distance D1.
- the position PS of the lift pin 50 closest to the short side SS of the substrate S is separated from the end of the short side SS of the substrate S by a distance D2.
- the distances D1 and D2 are, for example, about 10 mm to 14 mm.
- the number of lift pins 50 in the present embodiment is 18, the number of lift pins 50 is not limited, and may be 19 or more, or 17 or less in consideration of the deflection of the substrate S and the like. It may be
- the high frequency power source 30 is provided outside the vacuum chamber 10, and is electrically connected to a cathode electrode provided in the vacuum chamber 10 through a matching box and wiring (not shown). The high frequency power source 30 is activated, and the matched and matched high frequency power (RF) is supplied to the cathode electrode to generate plasma in the vacuum chamber 10.
- RF high frequency power
- the lifting mechanism 40 moves the lift pin 50 relative to the heater 20 up and down. Specifically, the elevating mechanism 40 can change the position of the heater 20 in the vertical direction (gravity direction), and the lift pin 50 contacts the lift pin base 45 by moving the heater 20 downward, so that the lift pin is lifted. 50 project from the substrate mounting surface 21. At this time, when the substrate S is mounted on the substrate mounting surface 21, the lift pins 50 lift the substrate S.
- the elevating mechanism 40 can change the position of the heater 20 in the vertical direction (gravity direction), and the lift pin 50 contacts the lift pin base 45 by moving the heater 20 downward, so that the lift pin is lifted. 50 project from the substrate mounting surface 21. At this time, when the substrate S is mounted on the substrate mounting surface 21, the lift pins 50 lift the substrate S.
- the vacuum pump 60 is connected to an exhaust port formed in the vacuum chamber 10 via a pressure control valve and piping (not shown). By driving the vacuum pump 60, the inside of the vacuum chamber 10 can be maintained in a vacuum state, and the gas remaining in the vacuum chamber 10 can be removed after the process is completed. Further, by driving the vacuum pump 60 and the pressure control valve while the process gas is supplied into the vacuum chamber 10, it is possible to adjust the pressure in the vacuum chamber 10 according to the process conditions.
- the gas supply unit 70 is connected to a gas supply port formed in the vacuum chamber 10 via a mass flow controller and piping (not shown).
- the type of gas supplied from the gas supply unit 70 can be appropriately selected according to the type of process in the vacuum chamber 10, for example, a film forming process, an etching process, an ashing process, and the like.
- the gas supplied from the gas supply unit 70 is supplied to the vacuum chamber 10 and then supplied toward the substrate S through the shower plate 75.
- the door valve 80 includes an open / close drive mechanism (not shown). By opening the door valve 80, a transfer arm (not shown) can load the substrate S into the vacuum processing apparatus 100 or unload the substrate S from the vacuum processing apparatus 100. By closing the door valve 80, the vacuum chamber 10 is sealed, and the substrate S can be processed in the vacuum chamber 10.
- the vacuum processing apparatus 100 may include a cleaning device that cleans the surface of the member in the vacuum chamber 10 by supplying a gas such as NF 3 to the discharge space in the vacuum chamber 10.
- a cleaning apparatus an apparatus using remote plasma can be mentioned.
- each of the plurality of lift pins 50 has a central member 51, a surrounding member 52, a ring member 53, and a cylindrical member 54.
- the central member 51 has a main body 51M which is a conductive member, and a first surface 51T which is an upper surface of the main body 51M.
- the main body 51M has a T-shaped shape in a cross-sectional view, and includes a head portion 51H and a rod portion 51R.
- As a material of the main body 51M for example, aluminum is adopted.
- On the first surface 51T an alumite film (electrical insulating portion) in which aluminum is anodized is formed.
- the surface roughness (first surface roughness) of the alumite film formed on the first surface 51T can be appropriately changed according to the conditions of the anodizing treatment, and, for example, surface roughness Ra1 to 2 ⁇ m can be mentioned.
- the rod portion 51R is electrically connected to the heater 20, the same potential is maintained at the rod portion 51R and the heater 20.
- the diameter of the head portion 51H of the central member 51 is, for example, 6.4 mm.
- the first surface 51T is a flat surface, but the present invention is not limited to this structure.
- the center position 51C of the center member 51 on the first surface 51T is positioned outside the end position 52E of the peripheral member 52 on the second surface 52T in the direction in which the lift pins 50 extend (Z direction).
- the one surface 51T and the second surface 52T may have a curved surface.
- the shape of the curved surface may be, for example, a spherical surface or an aspheric surface such as a gentle paraboloid or a semi-elliptic surface.
- the curved surface is preferably spherical in view of easy processing and determination of the optimum value.
- the back surface SB of the substrate S and the first surface 51T smoothly contact, and the generation of a scratch on the back surface SB of the substrate S is suppressed Be done.
- the surrounding member 52 surrounds the periphery of the central member 51, and in particular, encloses the side surface of the head 51H and the connecting portion of the head 51H and the rod 51R.
- the surrounding member 52 includes a main body 52M, which is an electrical insulating member, and a second surface 52T, which is an upper surface of the main body 52M.
- the second surface 52T is a curved surface and constitutes an electrical insulating portion.
- insulating ceramics such as alumina, zirconia, aluminum nitride, silicon nitride, silicon carbide, are adopted, for example.
- the surface roughness (second surface roughness) of the second surface 52T is smaller than the surface roughness of the first surface 51T, and may be, for example, a surface roughness of 0.2 ⁇ m.
- the diameter of the surrounding member 52 is, for example, 9.5 mm.
- the corner located between the outer surface 52S of the surrounding member 52 and the second surface 52T of the surrounding member 52 has a curved surface CV2.
- the corner located between the outer side surface 52S and the second surface 52T is chamfered.
- the ring member 53 is located below the surrounding member 52 and surrounds the rod portion 51R of the central member 51.
- a material of the ring member 53 for example, aluminum is adopted.
- the cylindrical member 54 is located below the ring member 53 and surrounds the rod portion 51R of the central member 51.
- an insulating ceramic is employed as a material of the cylindrical member 54.
- the lift mechanism 50 is driven, and the lift pins 50 are lifted above the substrate mounting surface 21, whereby the lift pins 50 can receive the substrate S.
- the transfer arm transfers the substrate S to the space above the substrate mounting surface 21, and the transfer arm transfers the substrate S to the lift pins 50.
- the first surface 51T of the lift pin 50 contacts the back surface SB of the substrate S, and the lift pin 50 receives the substrate S from the transfer arm.
- the substrate S may vibrate, and the substrate S may also contact the second surface 52T due to the vibration.
- the surface roughness of the second surface 52T is smaller than that of the first surface 51T, the generation of scratches on the back surface SB of the substrate S resulting from the contact between the second surface 52T and the substrate S is suppressed.
- the curved surface CV2 is formed at the corner of the lift pin 50, that is, the second surface 52T, the back surface SB of the substrate S and the second surface 52T smoothly contact, and a scratch on the back surface SB of the substrate S Occurrence is suppressed. In other words, since the curved surface CV2 is formed at the corner of the lift pin 50, the sharp corner does not contact the back surface SB of the substrate S.
- the lift pins 50 holding the substrate S are lowered, the substrate S is mounted on the substrate mounting surface 21, and the lift pins 50 are heaters 20 as shown in FIG. 5. Is stored in the opening 22 of the In this state, the central member 51 and the surrounding member 52 face the back surface SB of the substrate S at the position P shown in FIG.
- the central member 51 of the lift pin 50 is formed of the same conductive member as the heater 20 and is electrically connected to the heater 20, and the potentials of the central member 51 and the heater 20 are the same. Therefore, the state of plasma generated on the substrate S corresponding to the position P of the lift pins 50 is the same as the state of plasma generated on the substrate S located on the substrate mounting surface 21 on which the lift pins 50 are not formed. As a result, plasma is uniformly generated, and a film having a uniform film thickness distribution is formed on the substrate S.
- the lift pins 50 are lifted above the substrate mounting surface 21 by driving the lift mechanism 40, and as shown in FIG. 4, the lift pins 50 lift the substrate S, and the transport arm is the substrate S. Receive When such transport is performed, the substrate S may vibrate as in the above-described transport. Also in this case, since the surface roughness of the second surface 52T is smaller than that of the first surface 51T, the back surface SB of the substrate S resulting from the contact between the second surface 52T and the substrate S resulting from the vibration of the substrate S The occurrence of wounds is suppressed.
- the curved surface CV2 is formed at the corner of the lift pin 50, that is, the second surface 52T, the back surface SB of the substrate S and the second surface 52T smoothly contact, and a scratch on the back surface SB of the substrate S Occurrence is suppressed.
- the curved surface CV2 is formed at the corner of the lift pin 50, the sharp corner does not contact the back surface SB of the substrate S.
- the transfer arm that has received the substrate S removes the substrate S from the vacuum chamber 10.
- the surface roughness of the second surface 52T is smaller than that of the first surface 51T, so the contact is caused between the second surface 52T and the substrate S. It is possible to suppress the occurrence of scratches on the back surface SB of the substrate S.
- the central member 51 is formed of a conductive member and is electrically connected to the heater 20, and the potentials of the central member 51 and the heater 20 are the same. For this reason, even when the lift pins 50 are accommodated in the plurality of opening holes 22, the plasma generated on the substrate S does not become nonuniform, and the uniform film thickness distribution on the substrate S is achieved by the uniform plasma. A film can be formed.
- the plasma tends to be uneven, but
- plasma can be generated uniformly at the positions PL and PS, and a film having a uniform film thickness distribution can be formed.
- FIG. 6 is a cross-sectional view showing the main part of the structure of the lift pin according to the first modification of the embodiment of the present invention.
- the same members as those of the embodiment described above are denoted by the same reference numerals, and the description thereof will be omitted or simplified.
- the present modification 1 differs from the above-described embodiment in that the central member and the peripheral member are an integral part formed of a conductive member.
- the lift pin 150 has a central region 151 (central member) and a peripheral region 152 (peripheral member), and is an integral part formed of aluminum (conductive member). That is, no boundary is formed between the central region 151 and the surrounding region 152.
- the first surface 151T of the central region 151 and the second surface 152T of the peripheral region 152 are formed with an alumite film (electrical insulating portion) anodized by aluminum, but the surface roughness of the first surface 151T is It differs from the second surface 152T, and the surface roughness (second surface roughness) of the second surface 152T is smaller than the surface roughness of the first surface 151T.
- the surface roughness of the first surface 151T may be, for example, a surface roughness Ra of 1 to 2 ⁇ m.
- the surface roughness of the second surface 152T may be, for example, a surface roughness of 0.2 ⁇ m Ra.
- the first surface 151T is a flat surface, but the present invention is not limited to this structure.
- the center position 151C of the central region 151 on the first surface 151T is positioned outside the end position 152E of the peripheral region 152 on the second surface 152T in the direction in which the lift pins 150 extend (Z direction).
- the one surface 151T and the second surface 152T may have a curved surface.
- the first surface 151T and the second surface 152T forming the curved surface may be spherical, or may be an aspheric surface such as a gentle paraboloid or a semi-elliptic surface.
- the corner located between the outer surface 152S of the lift pin 150 and the second surface 152T of the surrounding area 152 has a curved surface CV2. In other words, the corner located between the outer side surface 152S and the second surface 152T is chamfered.
- the surface roughness of the second surface 152T is smaller than the surface roughness of the first surface 151T.
- the generation of scratches on the back surface SB of the substrate S resulting from the contact between the second surface 152T and the substrate S can be suppressed.
- the formation of the curved surface CV2 can suppress the generation of a scratch on the back surface SB of the substrate S by the above-described operation.
- the lift pin 150 is electrically connected to the heater 20, and the potentials of the lift pin 150 and the heater 20 are the same. For this reason, even when the lift pins 150 are stored in the plurality of opening holes 22, the plasma generated on the substrate S does not become nonuniform, and the uniform film thickness distribution on the substrate S is achieved by the uniform plasma. A film can be formed.
- FIG. 7 is a cross-sectional view showing the main part of the structure of the lift pin according to the second modification of the embodiment of the present invention.
- the same members as those in the embodiment and the first modification described above are denoted by the same reference numerals, and the description thereof will be omitted or simplified.
- the second modification differs from the above-described embodiment in that the surrounding member is a conductive member.
- the lift pin 250 includes the central member 51 described above and a surrounding member 252 formed of aluminum (conductive member). That is, in the second modification, a surrounding member 252 made of aluminum is employed in place of the surrounding member 52 made of insulating ceramic.
- the second surface 252T of the peripheral member 252 is provided with an alumite film (electrical insulating portion) anodized by aluminum, but the surface roughness of the first surface 51T is different from that of the second surface 252T.
- the surface roughness (second surface roughness) of the second surface 252T is smaller than the surface roughness of the first surface 51T.
- the surface roughness of the first surface 51T may be, for example, a surface roughness Ra of 1 to 2 ⁇ m.
- the surface roughness of the second surface 252T may be, for example, a surface roughness of 0.2 ⁇ m Ra.
- the upper surface of the central member 51 is a flat surface, but the present invention is not limited to this structure.
- the first surface 51T and the second surface 252T have curved surfaces such that the central position 51C is located outside the end position 252E of the surrounding member 252 in the second surface 252T in the direction (Z direction) in which the lift pin 250 extends. May be included.
- the first surface 51T and the second surface 252T forming the curved surface may be spherical, or may be an aspheric surface such as a gentle paraboloid or a semi-elliptic surface.
- the corner located between the outer surface 252S of the surrounding member 252 and the second surface 252T of the surrounding member 252 has a curved surface CV2. In other words, the corner located between the outer side surface 252S and the second surface 252T is chamfered.
- the surface roughness of the second surface 252T is made larger than the surface roughness of the first surface 51T.
- the formation of the curved surface CV2 can suppress the generation of a scratch on the back surface SB of the substrate S by the above-described operation.
- the central member 51 is electrically connected to the heater 20, and the potentials of the central member 51 and the heater 20 are the same. For this reason, even when the lift pins 250 are accommodated in the plurality of opening holes 22, the plasma generated on the substrate S does not become nonuniform, and the uniform film thickness distribution on the substrate S is achieved by the uniform plasma. A film can be formed.
- FIG. 8 is a cross-sectional view showing the main part of the structure of the lift pin according to the third modification of the embodiment of the present invention.
- the same members as those in the embodiment and the first and second modifications described above are given the same reference numerals, and the description thereof will be omitted or simplified.
- the central member 51 and the periphery are in contact with the end of the first surface 51T and the end of the second surface 52T.
- the members 52 are adjacent.
- the present invention is not limited to the structures shown in FIGS. 3A, 3B, 6, 7. For example, as shown in FIG.
- the second surface 52T and the first surface 51T may be connected via the step ST.
- a recess 55 is formed between the upper end 52U of the surrounding member 52 and the first surface 51T (flat surface).
- the depth of the recess 55 that is, the distance between the upper end 52U and the first surface 51T in the Z direction is defined by ⁇ t as shown in FIG.
- the central position 51C of the central member 51 on the first surface 51T is lower than the position of the upper end 52U of the surrounding member 52 in the direction (Z direction) in which the lift pins 350 extend.
- FIG. 9 is a cross-sectional view showing the main parts of the structure of the lift pin according to the fourth modification of the embodiment of the present invention.
- the same members as those in the embodiment and the first to third modifications described above are given the same reference numerals, and the description thereof will be omitted or simplified.
- the third modification described above an example in which the recess 55 is formed between the upper end 52U of the surrounding member 52 and the first surface 51T when the first surface 51T is a flat surface has been described.
- the fourth modification is different from the third modification in that a curved surface having a convex shape that bulges in the Z direction is formed on the first surface 51T.
- the depth of the recess 455 at the end 51E of the first surface 51T (the same position as the upper end 52U when viewed from the Z direction), that is, the distance between the upper end 52U and the end 51E in the Z direction is shown in FIG. Is defined by ⁇ t.
- the position of the end 51E of the center member 51 on the first surface 51T is lower than the position of the upper end 52U of the surrounding member 52 in the direction (Z direction) in which the lift pin 450 extends.
- the position of the central position 51C is lower than the position of the upper end 52U of the surrounding member 52.
- the shape of the convex curved surface formed on the first surface 51T may be, for example, a spherical surface, or a gentle paraboloid or a semi-elliptical aspheric surface. .
- FIG. 10 is a cross-sectional view showing the main part of the structure of the lift pin according to the fifth modification of the embodiment of the present invention.
- the same members as those in the embodiment and the first to fourth modifications described above are given the same reference numerals, and the description thereof will be omitted or simplified.
- the fourth modification described above when the first surface 51T is formed with a curved surface having a convex shape that bulges in the Z direction, the concave portion is formed between the upper end 52U of the surrounding member 52 and the first surface 51T. An example in which 455 is formed has been described.
- the present modification 5 is different from the modification 4 in that a curved surface having a concave shape is formed on the first surface 51T.
- the depth of the recess 555 at the center position 51C of the first surface 51T is defined by ⁇ t as shown in FIG.
- the position of the central position 51C of the central member 51 on the first surface 51T is lower than the position of the upper end 52U of the surrounding member 52 in the direction (Z direction) in which the lift pins 550 extend.
- the position of the end 51E is lower than the position of the upper end 52U of the surrounding member 52.
- the shape of the concave surface formed on the first surface 51T may be, for example, a spherical surface, or may be an aspheric surface such as a gentle paraboloid or a semi-elliptic surface. .
- 11A and 11B are formed by forming two types of films on the substrate by changing the material types of the central member 51, the peripheral member 52, the ring member 53, and the cylindrical member 54 according to the embodiment described above. And the results of evaluation of flaws generated on the back surface of the substrate.
- the TEOS film tetraethyl orthosilicate film, tetraethyl orthosilicate
- the SiNx film silicon nitride film
- film deposition distribution evaluation superiority or inferiority of the uniformity of the film thickness distribution formed on the surface of the glass substrate is evaluated. Specifically, the symbol “ ⁇ ” indicates that the film thickness distribution is the best (uniform), the symbol “ ⁇ ” indicates that the film thickness distribution is good, and the symbol “ ⁇ ” indicates It indicates that the film thickness distribution was acceptable, and the sign “x” indicates that the film thickness distribution was unacceptable (non-uniform).
- Ceramic indicates that ceramic is selected as the material constituting the member, and "aluminum” constitutes the member. Indicates that aluminum was selected as the material to be used.
- Al SR selects aluminum as the material constituting the member, and that a curved surface is formed on the surfaces (the first surface 51T and the second surface 52T) of the central member 51 and the peripheral member 52 It shows.
- Al Flat selects aluminum as the material that constitutes the members, and indicates that the surfaces (the first surface 51T and the second surface 52T) of the central member 51 and the peripheral member 52 are flat surfaces.
- aluminum SRorFlat indicates that the surface (first surface 51T) of the central member 51 is a curved surface or a flat surface when aluminum is selected as a material for forming the member. That is, each of the embodiments A1 and B1 described below includes the result when the surface of the central member 51 is a curved surface and the result when the surface of the central member 51 is a flat surface. Moreover, in any of “Aluminum”, “Aluminum SR”, and “Aluminum Flat”, an anodized film is formed on the surface by anodic oxidation.
- ceramic SR selects ceramic as the material that constitutes the members, and that a curved surface is formed on the surfaces (the first surface 51T and the second surface 52T) of the central member 51 and the peripheral member 52 It shows.
- Ceramic Flat selects ceramic as the material of which the members are made, and indicates that the surfaces (the first surface 51T and the second surface 52T) of the central member 51 and the peripheral member 52 are flat surfaces. There is.
- Examples A1 and A2 In the case of Example A1, the results of both of the scratch evaluation and the film formation distribution evaluation were “o (good)”. Further, in the case of Example A2, the result of the flaw evaluation was “ ⁇ (good)”, and the result of the film formation distribution evaluation was “good (good)”. From this, as a combination of the central member 51 and the peripheral member 52, by adopting aluminum SRorFlat as the material of the central member 51 and adopting the ceramic SR as the material of the peripheral member 52, it is possible It became clear that good results were obtained in both evaluations.
- Example B1 and B2 In the case of Example B1, the result of the flaw evaluation was “ ⁇ (best)”, and the result of the film formation distribution evaluation was “ ⁇ (good)”. Further, in the case of Example B2, the result of the flaw evaluation was “ ⁇ (good)”, and the result of the film formation distribution evaluation was “good (good)”. From this, as a combination of the central member 51 and the peripheral member 52, aluminum is used as the material of the central member 51, and ceramic is used as the material of the peripheral member 52, thereby evaluating both the flaw evaluation and the film formation distribution evaluation.
- vacuum processing apparatus 100 was applied to the plasma CVD apparatus known as a film-forming apparatus was demonstrated in embodiment and the modification which were mentioned above, this invention is not limited to a plasma CVD apparatus.
- the vacuum processing apparatus according to the embodiment of the present invention is also applicable to an etching apparatus, an ashing apparatus, and the like.
- the present invention is widely applicable to a lift pin capable of suppressing generation of a flaw on the back surface of a substrate and achieving uniformity of plasma generated on the surface of the substrate, and a vacuum processing apparatus provided with the lift pin.
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Abstract
Description
本願は、2017年11月21日に日本に出願された特願2017-223792号に基づき優先権を主張し、その内容をここに援用する。
基板の裏面にリフトピンが接触することに起因する基板の傷の発生を防止する構造として、リフトピンの角部にR加工が施されたリフトピンが提案されている(特許文献1参照)。また、リフトピンを構成する材料として、強度や耐蝕性の点で、セラミックが一般的に用いられている(特許文献2参照)。
リフトピンは、開口穴の内部において、基板保持体を貫通するように相対的に上下に移動し、基板を持ち上げたり、基板を基板保持体の上面に載置したりする。
本発明者らは、上記知見に基づき、上記の課題を解決するため、本発明に至った。
以下に述べる実施形態では、一例として、真空処理装置がプラズマCVD装置(成膜装置)に適用される場合を説明する。
図1に示すように、本実施形態に係る真空処理装置100は、真空チャンバ10と、ヒータ20(基板保持体)と、高周波電源30と、昇降機構40と、リフトピン50と、真空ポンプ60と、ガス供給部70と、ドアバルブ80とを備える。
真空チャンバ10は、下部チャンバ11、上部チャンバ12、及び下部チャンバ11と上部チャンバ12との間に挟まれた電極フランジ13とを備える。
ヒータ20は、真空チャンバ10内に配置されており、導電性部材であるアルミニウムによって形成されている。ヒータ20は、基板Sが載置される基板載置面21と、ヒータ20を貫通して基板載置面21に開口する複数の開口穴22とを有する。基板載置面21とは反対側に位置するヒータ20の裏面には、ヒータベース23が設けられている。
下部開口22Lの直径は、リフトピン50の筒状部材54の直径よりも若干大きく、例えば、7.5mmである。
上部開口22Uの深さ22Dは、リフトピン50の周囲部材52及びリング部材53の長さよりも若干大きく、例えば、6.5mmである。
基板Sは、基板Sの長辺SLの近くにある10本のリフトピン50(位置PL)、基板Sの短辺SSの近くにある6本のリフトピン50(位置PS)、基板Sの略中央に位置する2本のリフトピン50(位置PC)、即ち、合計18本のリフトピン50によって昇降可能である。
なお、本実施形態におけるリフトピン50の本数は18であるが、リフトピン50の本数は限定されておらず、基板Sの撓み等を考慮し、その本数は19以上であってもよいし、17以下であってもよい。
高周波電源30は、真空チャンバ10の外部に設けられており、不図示のマッチングボックス及び配線を通じて真空チャンバ10内に設けられたカソード電極に電気的に接続されている。高周波電源30が起動し、マッチング整合された高周波電力(RF)がカソード電極に供給されることで、真空チャンバ10内にプラズマが発生する。
昇降機構40は、ヒータ20に対してリフトピン50を相対的に上下に移動させる。具体的に、昇降機構40は、ヒータ20の上下方向(重力方向)の位置を変更することが可能であり、ヒータ20を下方へ移動させることで、リフトピン50がリフトピンベース45に接触し、リフトピン50が基板載置面21から突出する。この時、基板載置面21上に基板Sが載置されている場合には、リフトピン50は基板Sを持ち上げる。
真空ポンプ60は、不図示の圧力調整弁及び配管を介して、真空チャンバ10に形成された排気口に接続されている。真空ポンプ60を駆動することで、真空チャンバ10内を真空状態に維持することが可能であり、プロセス終了後に真空チャンバ10内に残存するガスを除去することが可能である。また、プロセスガスが真空チャンバ10内に供給されている状態で真空ポンプ60及び圧力調整弁が駆動することで、プロセス条件に応じて真空チャンバ10内の圧力を調整することが可能である。
ガス供給部70は、不図示のマスフローコントローラ及び配管を介して、真空チャンバ10に形成されたガス供給口に接続されている。ガス供給部70から供給されるガスの種類は、真空チャンバ10内のプロセスの種類、例えば、成膜処理、エッチング処理、アッシング処理等に応じて、適宜、選択可能である。ガス供給部70から供給されたガスは、真空チャンバ10に供給された後、シャワープレート75を通じて、基板Sに向けて供給される。
ドアバルブ80は、不図示の開閉駆動機構を備えている。ドアバルブ80が開くことで、不図示の搬送アームが真空処理装置100内に基板Sを搬入したり、真空処理装置100から基板Sを搬出したりすることが可能となる。ドアバルブ80が閉じることで、真空チャンバ10が密閉状態となり、真空チャンバ10内で基板Sを処理することが可能となる。
リフトピン50は、真空処理装置によって処理が施される被処理面と被処理面とは反対の非処理面とを有する基板Sに接触する構成を有する。基板Sの非処理面は、後述する裏面SBに相当する。
図3A及び図3Bに示すように、複数のリフトピン50の各々は、中央部材51と、周囲部材52と、リング部材53と、筒状部材54とを有する。
中央部材51は、導電性部材である本体51Mと、本体51Mの上面である第1面51Tとを有する。本体51Mは、断面視においてT型の形状を有しており、ヘッド部51Hと、ロッド部51Rとを有する。
本体51Mの材料としては、例えば、アルミニウムが採用される。第1面51Tには、アルミニウムが陽極酸化処理されたアルマイト被膜(電気絶縁部)が形成されている。
第1面51Tに形成されているアルマイト被膜の表面粗さ(第1表面粗さ)は、陽極酸化処理の条件によって適宜変更可能であるが、例えば、Ra1~2μmの表面粗さが挙げられる。
また、ロッド部51Rは、ヒータ20と電気的に接続されているため、ロッド部51R及びヒータ20は、同じ電位が維持されている。
中央部材51のヘッド部51Hの直径は、例えば、6.4mmである。
周囲部材52は、中央部材51の周囲を囲っており、特に、ヘッド部51Hの側面と、ヘッド部51H及びロッド部51Rの接続部分とを囲っている。
本実施形態において、周囲部材52は、電気絶縁部材である本体52Mと、本体52Mの上面である第2面52Tとを有する。第2面52Tは、曲面であり、電気絶縁部を構成する。
本体52Mの材料としては、例えば、アルミナ、ジルコニア、窒化アルミニウム、窒化珪素、炭化珪素等の絶縁性セラミックが採用される。第2面52Tの表面粗さ(第2表面粗さ)は、第1面51Tの表面粗さよりも小さく、例えば、Ra0.2μmの表面粗さが挙げられる。
周囲部材52の直径は、例えば、9.5mmである。
筒状部材54は、リング部材53の下方に位置するとともに中央部材51のロッド部51Rの周囲を囲う。筒状部材54の材料としては、例えば、絶縁性セラミックが採用される。
真空処理装置100において、昇降機構40が駆動し、リフトピン50が基板載置面21の上方に向けて上昇することで、リフトピン50は基板Sの受け取りが可能な状態となる。その後、搬送アームが基板載置面21の上方の空間に基板Sを搬送し、搬送アームからリフトピン50に対して基板Sが渡される。このとき、図4に示すようにリフトピン50の第1面51Tが基板Sの裏面SBと接触し、リフトピン50が搬送アームから基板Sを受け取る。このような搬送が行われている際、基板Sが振動する場合があり、この振動により、基板Sは、第2面52Tにも接触することがある。しかしながら、第2面52Tの表面粗さは、第1面51Tよりも小さいため、第2面52Tと基板Sとの接触に起因する基板Sの裏面SBにおける傷の発生が抑制される。さらに、曲面CV2がリフトピン50の角部、即ち、第2面52Tに形成されていることで、基板Sの裏面SBと第2面52Tとが滑らかに接触し、基板Sの裏面SBにおける傷の発生が抑制される。換言すると、曲面CV2がリフトピン50の角部に形成されていることで、尖った角部が基板Sの裏面SBに接触することがない。
さらに、中央部材51は、導電性部材で形成され、ヒータ20に電気的に接続されており、中央部材51及びヒータ20の電位は同じとなっている。このため、複数の開口穴22にリフトピン50が収納されている場合であっても、基板S上に発生するプラズマが不均一にならず、均一なプラズマによって基板S上に均一な膜厚分布を有する膜を形成することができる。
図6は、本発明の実施形態の変形例1に係るリフトピンの構造の要部を示す断面図である。図6において、上述した実施形態と同一部材には同一符号を付して、その説明は省略または簡略化する。
本変形例1は、中央部材及び周囲部材が導電性部材で構成された一体品である点で、上述した実施形態とは異なる。
具体的に、第1面151Tの表面粗さは、例えば、Ra1~2μmの表面粗さが挙げられる。また、第2面152Tの表面粗さは、例えば、Ra0.2μmの表面粗さが挙げられる。
リフトピン150の外側面152Sと周囲領域152の第2面152Tとの間に位置する角部は、曲面CV2を有する。換言すると、外側面152Sと第2面152Tとの間に位置する角部には面取加工が施されている。
図7は、本発明の実施形態の変形例2に係るリフトピンの構造の要部を示す断面図である。図7において、上述した実施形態及び変形例1と同一部材には同一符号を付して、その説明は省略または簡略化する。
本変形例2は、周囲部材が導電性部材である点で、上述した実施形態とは異なる。
具体的に、第1面51Tの表面粗さは、例えば、Ra1~2μmの表面粗さが挙げられる。また、第2面252Tの表面粗さは、例えば、Ra0.2μmの表面粗さが挙げられる。
周囲部材252の外側面252Sと周囲部材252の第2面252Tとの間に位置する角部は、曲面CV2を有する。換言すると、外側面252Sと第2面252Tとの間に位置する角部には面取加工が施されている。
図8は、本発明の実施形態の変形例3に係るリフトピンの構造の要部を示す断面図である。図8において、上述した実施形態及び変形例1、2と同一部材には同一符号を付して、その説明は省略または簡略化する。
上述した実施形態においては、図3A、図3B、図6、図7に示すように、第1面51Tの端部と第2面52Tの端部とが接触するように、中央部材51及び周囲部材52は隣接している。本発明は、図3A、図3B、図6、図7に示す構造に限定されない。例えば、図8に示すように、段差STを介して第2面52Tと第1面51Tとが接続されてもよい。この場合、周囲部材52の上端52Uと第1面51T(平坦面)との間には、凹部55が形成されている。
凹部55の深さ、即ち、Z方向において、上端52Uと第1面51Tとの間の距離は、図8に示すようにΔtで規定されている。
換言すると、リフトピン350が延在する方向(Z方向)において、第1面51T上における中央部材51の中心位置51Cが周囲部材52の上端52Uの位置よりも低い。
このため、第1面51Tの端部(エッジ)が基板Sの裏面SBに接触することに起因して基板Sの裏面SBに傷が発生する可能性が低くなる。
図9は、本発明の実施形態の変形例4に係るリフトピンの構造の要部を示す断面図である。図9において、上述した実施形態及び変形例1~3と同一部材には同一符号を付して、その説明は省略または簡略化する。
上述した変形例3においては、第1面51Tが平坦面である場合に、周囲部材52の上端52Uと第1面51Tとの間に凹部55が形成されている例を説明した。本変形例4は、Z方向に向けて膨出する凸形状を有する曲面が第1面51Tに形成されている点で、変形例3と相違する。
換言すると、リフトピン450が延在する方向(Z方向)において、第1面51T上における中央部材51の端部51Eの位置が周囲部材52の上端52Uの位置よりも低い。
また、中心位置51Cの位置が周囲部材52の上端52Uの位置よりも低い。
なお、本変形例4において、第1面51Tに形成されている凸曲面の形状は、例えば、球面であってもよいし、緩やかな放物面、半楕円等の非球面であってもよい。
図10は、本発明の実施形態の変形例5に係るリフトピンの構造の要部を示す断面図である。図10において、上述した実施形態及び変形例1~4と同一部材には同一符号を付して、その説明は省略または簡略化する。
上述した変形例4においては、Z方向に向けて膨出する凸形状を有する曲面が第1面51Tに形成されている場合に、周囲部材52の上端52Uと第1面51Tとの間に凹部455が形成されている例を説明した。本変形例5は、凹形状を有する曲面が第1面51Tに形成されている点で、変形例4と相違する。
換言すると、リフトピン550が延在する方向(Z方向)において、第1面51T上における中央部材51の中心位置51Cの位置が周囲部材52の上端52Uの位置よりも低い。また、端部51Eの位置が周囲部材52の上端52Uの位置よりも低い。
なお、本変形例5において、第1面51Tに形成されている凹曲面の形状は、例えば、球面であってもよいし、緩やかな放物面、半楕円等の非球面であってもよい。
図11A及び図11Bは、上述した実施形態に係る中央部材51、周囲部材52、リング部材53、及び筒状部材54の材料種類を変えて2種類の膜を基板上に形成し、成膜分布の評価と、基板の裏面に発生する傷の評価を行った結果を示している。
成膜される膜の種類としては、図11Aに示すTEOS膜(オルトケイ酸テトラエチル膜、Tetraethyl orthosilicate)と、図11Bに示すSiNx膜(窒化シリコン膜)を採用した。
「傷評価」では、ガラス基板の裏面に対するリフトピンの傷の与え難さを評価している。
具体的に、符号「◎」は「基板に傷が発生しない(最良)」ことを示しており、符号「○」は「基板に傷が僅かに発生する(良好)」ことを示しており、符号「△」は「基板に発生した傷が許容範囲内である(可)」ことを示しており、符号「×」は「基板に発生した傷が許容範囲外である(不可)」ことを示している。
「成膜分布評価」では、ガラス基板の表面に成膜された膜厚分布の均一性の優劣を評価している。
具体的に、符号「◎」は膜厚分布が最良(均一)であったことを示しており、符号「○」は膜厚分布が良好であったことを示しており、符号「△」は膜厚分布が可であったことを示しており、符号「×」は膜厚分布が不可(不均一)であったことを示している。
中央部材51、周囲部材52、リング部材53、及び筒状部材54の材料に関し、「セラミック」は、部材を構成する材料としてセラミックを選択したことを示しており、「アルミニウム」は、部材を構成する材料としてアルミニウムを選択したことを示している。
また、「アルミニウムSR」は、部材を構成する材料としてアルミニウムを選択し、かつ、中央部材51及び周囲部材52の表面(第1面51T及び第2面52T)に曲面が形成されていることを示している。
さらに、「アルミニウムFlat」は、部材を構成する材料としてアルミニウムを選択し、かつ、中央部材51及び周囲部材52の表面(第1面51T及び第2面52T)が平坦面であることを示している。
さらに、「アルミニウムSRorFlat」は、部材を構成する材料としてアルミニウムを選択した場合において、中央部材51の表面(第1面51T)が曲面であること、又は、平坦面であることを示している。即ち、以下に説明する実施例A1、B1の各々は、中央部材51の表面が曲面である場合の結果と、中央部材51の表面が平坦面である場合の結果とを含んでいる。
また、「アルミニウム」、「アルミニウムSR」、及び「アルミニウムFlat」の何れにおいても、その表面には陽極酸化によってアルマイト被膜が形成されている。
さらに、「セラミックFlat」は、部材を構成する材料としてセラミックを選択し、かつ、中央部材51及び周囲部材52の表面(第1面51T及び第2面52T)が平坦面であることを示している。
以下の点が明らかとなった。
傷評価及び成膜分布評価のうち少なくとも一方の結果が「×(不可)」となった。特に、中央部材51の材料としてセラミック(セラミックSR、セラミックFlat)を用いると、成膜分布評価の結果が不良であることが明らかとなった。
この理由は、中央部材51の材料としてセラミックを採用することで、リフトピンに対応する位置におけるプラズマが不均一になり、成膜分布に悪影響を与えたと考えられる。
この理由は、周囲部材52の表面を平坦にすることで、傷が発生し易くなったと考えられる。
実施例A1の場合、傷評価及び成膜分布評価の両方の結果が「○(良好)」となった。また、実施例A2の場合、傷評価の結果が「△(可)」となり、成膜分布評価の結果が「○(良好)」となった。
このことから、中央部材51及び周囲部材52の組合せとしては、中央部材51の材料としてアルミニウムSRorFlatを採用し、周囲部材52の材料としてセラミックSRを採用することで、傷評価及び成膜分布評価の両評価において良好な結果が得られることが明らかとなった。
また、周囲部材52の材料としてセラミックを用いずにアルミニウムを採用する場合であっても、中央部材51及び周囲部材52の材料としてアルミニウムSRを採用することで、基板の裏面に発生した傷が許容範囲内であることが明らかとなった。
以下の点が明らかとなった。
傷評価及び成膜分布評価のうち少なくとも一方の結果が「×(不可)」となった。特に、中央部材51の材料としてセラミック(セラミックSR、セラミックFlat)を用いると、成膜分布評価の結果が不良であることが明らかとなった。
この理由は、中央部材51の材料としてセラミックを採用することで、リフトピンに対応する位置におけるプラズマが不均一になり、成膜分布に悪影響を与えたと考えられる。
この理由は、周囲部材52の表面を平坦にすることで、傷が発生し易くなったと考えられる。
実施例B1の場合、傷評価の結果が「◎(最良)」となり、成膜分布評価の結果が「○(良好)」となった。また、実施例B2の場合、傷評価の結果が「△(可)」となり、成膜分布評価の結果が「○(良好)」となった。
このことから、中央部材51及び周囲部材52の組合せとしては、中央部材51の材料としてアルミニウムを採用し、周囲部材52の材料としてセラミックを採用することで、傷評価及び成膜分布評価の両評価において良好な結果が得られることが明らかとなった。
また、周囲部材52の材料としてセラミックを用いずにアルミニウムを採用する場合であっても、中央部材51及び周囲部材52の材料としてアルミニウムSRを採用することで、基板の裏面に発生した傷が許容範囲内であることが明らかとなった。
Claims (8)
- 処理面及び非処理面を有する基板に接触するリフトピンであって、
第1表面粗さ及び電気絶縁部を有する第1面と、導電性部材である本体とを有し、前記基板の前記非処理面に対向する中央部材と、
前記第1表面粗さよりも小さい第2表面粗さ及び電気絶縁部を有する第2面を有し、前記中央部材の周囲を囲い、前記基板の前記非処理面に対向する周囲部材と、
を備えるリフトピン。 - 前記周囲部材は、電気絶縁部材である
請求項1に記載のリフトピン。 - 前記周囲部材は、導電性部材である
請求項1に記載のリフトピン。 - 前記中央部材及び前記周囲部材は、導電性部材で構成された一体品である
請求項3に記載のリフトピン。 - 前記リフトピンが延在する方向において前記第1面上における前記中央部材の中心位置が前記第2面における前記周囲部材の端部位置よりも外側に位置するように、前記第1面及び前記第2面は曲面を有する
請求項1から請求項4のいずれか一項に記載のリフトピン。 - 前記周囲部材の外側面と前記周囲部材の前記第2面との間に位置する角部は、曲面を有する
請求項1から請求項5のいずれか一項に記載のリフトピン。 - 前記第1面及び前記第2面は、前記基板の前記非処理面に接触可能である
請求項1から請求項6のいずれか一項に記載のリフトピン。 - 真空処理装置であって、
真空チャンバと、
基板が載置される基板載置面と、前記基板載置面に開口する開口穴とを有し、前記真空チャンバ内に配置された基板保持体と、
前記開口穴に対応する位置に設けられ、前記開口穴の内部にて上下に昇降可能な、請求項1から請求項7のいずれか一項に記載のリフトピンと、
前記真空チャンバ内にプラズマを発生させる高周波電源と、
前記基板保持体に対して前記リフトピンを相対的に上下に移動させる昇降機構と、
を備える真空処理装置。
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JP2018565082A JP6652665B2 (ja) | 2017-11-21 | 2018-08-06 | リフトピン及び真空処理装置 |
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JP2003197721A (ja) * | 2001-12-26 | 2003-07-11 | Ulvac Japan Ltd | 基板支持用昇降ピン及びこれを用いた多室型成膜装置 |
JP2007208054A (ja) * | 2006-02-02 | 2007-08-16 | Ulvac Japan Ltd | 静電気除去装置及び静電気除去方法 |
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JP6652665B2 (ja) | 2020-02-26 |
CN110073484A (zh) | 2019-07-30 |
CN110073484B (zh) | 2023-10-17 |
KR20190069390A (ko) | 2019-06-19 |
KR102180158B1 (ko) | 2020-11-18 |
TWI682485B (zh) | 2020-01-11 |
JPWO2019102657A1 (ja) | 2019-11-21 |
US20210343577A1 (en) | 2021-11-04 |
TW201926520A (zh) | 2019-07-01 |
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