WO2019090838A1 - 一种oled器件、oled显示面板及制备方法 - Google Patents

一种oled器件、oled显示面板及制备方法 Download PDF

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Publication number
WO2019090838A1
WO2019090838A1 PCT/CN2017/112587 CN2017112587W WO2019090838A1 WO 2019090838 A1 WO2019090838 A1 WO 2019090838A1 CN 2017112587 W CN2017112587 W CN 2017112587W WO 2019090838 A1 WO2019090838 A1 WO 2019090838A1
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Prior art keywords
layer
oled
auxiliary
opening
disposed
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PCT/CN2017/112587
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English (en)
French (fr)
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韩佰祥
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2019090838A1 publication Critical patent/WO2019090838A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED device, an OLED display panel, and a method of fabricating the same.
  • OLED (Organic Light-Emitting) Diode (Organic Light Emitting Diode) displays have become the most promising displays in recent years due to their self-illumination, all solid state and high contrast.
  • OLED displays In the application of large-size OLED displays, most of the current use of bottom-emitting OLED displays, the cathode of which uses a thicker metal layer.
  • the aperture ratio it is difficult to achieve high resolution for the bottom emission type OLED display. Therefore, it is desirable to achieve higher resolution through a top emission type OLED display.
  • the inventors of the present application have found in long-term development that the cathode of the top emission type OLED display uses a thin transparent metal.
  • the transparent cathode of the top emission type OLED display has a thin thickness, resulting in poor conductivity.
  • the center of the screen is far from the electrode interface, and the long-distance current transmission causes the driving voltage to rise greatly, resulting in a large difference in driving voltage between the edge of the screen and the OLED device at the center of the screen, that is, the voltage drop. (IR Drop) problem, making the screen display uneven.
  • the invention provides an OLED device, an OLED display panel and a preparation method thereof, so as to solve the technical problem that the driving voltage difference between the screen edge and the screen center of the large-size OLED display in the prior art is large, and the screen display is uneven.
  • an OLED device including:
  • a thin film transistor disposed on the substrate
  • a cathode layer is disposed on the OLED layer and the auxiliary anode layer, and is electrically connected to the auxiliary cathode layer through the auxiliary anode layer.
  • an OLED display panel including a plurality of light emitting units, each of the light emitting units including at least one OLED device, wherein at least one OLED device is an OLED as described above Device.
  • another technical solution adopted by the present invention is to provide a method for preparing an OLED display panel, including:
  • anode layer and an auxiliary anode layer on the auxiliary cathode layer, wherein the anode layer is connected to the thin film transistor through the first via hole, and the auxiliary anode layer passes through the second via hole and the auxiliary cathode Layer connection
  • the invention increases the driving voltage difference of the OLED device at the edge of the screen and the center of the screen by adding the auxiliary cathode layer and the auxiliary anode layer in the OLED device, and electrically connecting the cathode layer and the auxiliary cathode layer, so that the screen display is more uniform and displayed. Better results.
  • FIG. 1 is a schematic structural view of an embodiment of an OLED device of the present invention.
  • FIG. 2 is a schematic structural view of an embodiment of an OLED display panel of the present invention.
  • FIG. 3 is a schematic structural view of another embodiment of an OLED display panel of the present invention.
  • FIG. 4 is a schematic flow chart of an embodiment of a method for fabricating an OLED display panel of the present invention
  • 5a-5j are schematic diagrams showing a process flow of an embodiment of a method for fabricating an OLED display panel of the present invention.
  • FIG. 6 is a schematic structural view of a mask layer according to an embodiment of a method for fabricating an OLED display panel of the present invention.
  • FIG. 7 is a schematic structural view of a mask layer of another embodiment of a method for fabricating an OLED display panel of the present invention.
  • FIGS. 8a-8e are schematic diagrams showing a process flow of another embodiment of a method for fabricating an OLED display panel of the present invention.
  • FIG. 9 is a schematic structural view of a mask layer of another embodiment of a method for fabricating an OLED display panel of the present invention.
  • an embodiment of an OLED device of the present invention includes:
  • the substrate 101 may be a glass substrate, a PI (Polyimide) substrate, or the like.
  • the thin film transistor 102 is disposed on the substrate 101;
  • the thin film transistor 102 includes a gate layer 1021, a gate protection layer 1022, an active layer 1023, an etch stop layer 1024, a source layer 1025, and a drain layer 1026.
  • the etch stop layer 1024 is provided with a via hole.
  • the source layer 1025 and the drain layer 1026 are connected to the active layer 1023 through via holes.
  • the gate protection layer 1022 is extended on the substrate 101, and the etch barrier layer 1024 is extended on the gate protection layer 1022.
  • the auxiliary cathode layer 1031 is disposed on the etch barrier layer 1024;
  • the auxiliary cathode layer 1031 is not in contact with the source layer 1025 or the drain layer 1026.
  • the first flat layer 1071 is disposed on the thin film transistor 102 and the auxiliary cathode layer 1031, and the first flat layer 1071 is respectively provided with a first via hole 1071a and a second via hole 1071b corresponding to the thin film transistor 102 and the auxiliary cathode layer 1031;
  • the anode layer 104 is disposed on the first planar layer 1071, at least a portion of the anode layer 104 is received in the first via hole 1071a, and the anode layer 104 is connected to the thin film transistor 102 through the first via hole 1071a;
  • the auxiliary anode layer 1032 is disposed on the first flat layer 1071, at least a portion of the auxiliary anode layer 1032 is received in the second through hole 1071b, and the auxiliary anode layer 1032 is connected to the auxiliary cathode layer 1031 through the second through hole 1071b;
  • a second flat layer 1072 disposed on the first flat layer 1071 and covering the anode layer 104 and the auxiliary anode layer 1032, and corresponding to the anode layer 104 and the auxiliary anode layer 1032 respectively provided with a first opening 1072a and a second opening 1072b;
  • the OLED layer 105 is disposed on the second flat layer 1072, and the OLED layer 105 covers the first opening 1072a to be connected to the anode layer 104; the OLED layer 105 is provided with a third opening 105a corresponding to the second opening 1072b;
  • the OLED layer 105 may include a red light emitting material, a green light emitting material, a blue light emitting material, or a white light emitting material.
  • the cathode layer 106 is disposed on the OLED layer 105 and the auxiliary anode layer 1032.
  • the cathode layer 106 covers the second opening 1072b and the third opening 105a such that the cathode layer 106 passes through the second opening 1072b and the third opening 105a and the auxiliary anode layer 1032.
  • auxiliary cathode layer 1031 and the auxiliary anode layer 1032 are made of a conductive material.
  • the invention increases the driving voltage difference of the OLED device at the edge of the screen and the center of the screen by adding the auxiliary cathode layer and the auxiliary anode layer in the OLED device, and electrically connecting the cathode layer and the auxiliary cathode layer, so that the screen display is more uniform and displayed. Better results.
  • an embodiment of the OLED display panel of the present invention includes a plurality of light emitting units 20, each of which includes at least one OLED device, wherein at least one OLED device 204 is an OLED device in an OLED device embodiment as described above.
  • the light emitting unit 20 includes a red OLED device 201, a green OLED device 202, a blue OLED device 203, and a white OLED device 204, wherein the white OLED device 204 includes an auxiliary cathode layer 2041, and a cathode layer of the OLED display panel.
  • the auxiliary cathode layer 2041 is electrically connected to reduce the voltage drop problem of the OLED display panel.
  • the OLED device 204 can also be a red OLED device, a green OLED device, or a blue OLED device.
  • another embodiment of the OLED display panel of the present invention includes a plurality of light emitting units 30, each of which includes at least one OLED device, wherein at least one OLED device 304 is an OLED device in an OLED device embodiment as described above.
  • the light emitting unit 30 includes a red OLED device 301, a green OLED device 302, a blue OLED device 303, and a white OLED device 304, wherein each OLED device includes an auxiliary cathode such as in the white OLED device 304.
  • Layer 3041, the cathode layer of the OLED display panel is electrically connected to the auxiliary cathode layer in each OLED device to reduce the voltage drop problem of the OLED display panel.
  • the invention increases the driving voltage difference of the OLED device at the edge of the screen and the center of the screen by adding the auxiliary cathode layer and the auxiliary anode layer in the OLED device, and electrically connecting the cathode layer and the auxiliary cathode layer, so that the screen display is more uniform and displayed. Better results.
  • an embodiment of a method for fabricating an OLED display panel of the present invention includes:
  • a gate layer 1021, a gate protection layer 1022, an active layer 1023, and an etch barrier layer 1024 are sequentially formed on the substrate 101, via holes are formed on the etch barrier layer 1024, and a source is prepared in the etch barrier layer 1024.
  • the pole layer 1025 and the drain layer 1026 are such that the source layer 1025 and the drain layer 1026 are connected to the active layer 1023 through via holes, respectively.
  • the gate layer 1021, the gate protective layer 1022, the active layer 1023, the etch stop layer 1024, the source layer 1025, and the drain layer 1026 constitute the thin film transistor 102.
  • the gate protection layer 1022 of the plurality of thin film transistors 102 is extended on the substrate 101, and the etch barrier layer 1024 of the plurality of thin film transistors 102 is extended on the gate protection layer 1022.
  • the auxiliary cathode layer 1031 is not in contact with the source layer 1025 or the drain layer 1026.
  • the first via hole 1071a and the second via hole 1071b are prepared in the first planarization layer 1071.
  • At least a portion of the anode layer 104 is received in the first via hole 1071a, and the anode layer 104 is connected to the thin film transistor 102 through the first via hole 1071a.
  • the auxiliary anode layer 1032 is disposed in the same layer as the anode layer 104 and is not in contact with each other. At least a portion of the auxiliary anode layer 1032 is received in the second through hole 1071b, and the auxiliary anode layer 1032 is connected to the auxiliary cathode layer 1031 through the second through hole 1071b;
  • the mask layer 108 covers only the region 1081 of the second planar layer 1072 corresponding to the auxiliary anode layer, and the other regions corresponding to the display panel are hollowed out.
  • the mask layer 108 is prepared by a yellow light process.
  • each of the thin film transistors is provided with an auxiliary cathode layer and an auxiliary anode layer.
  • the mask layer 108 is disposed to cover the region 1082 of the second planar layer corresponding to each of the auxiliary anode layers. The other areas corresponding to the display panel are hollowed out.
  • the OLED layer 105 covers the first opening 1072a to be connected to the anode layer 104.
  • the mask layer 108 is removed, and the cathode layer 106 is prepared on the OLED layer 105 such that the cathode layer 106 is electrically connected to the auxiliary cathode layer 1031.
  • the OLED layer 105 forms a third opening 105a under the action of the mask layer 108.
  • the cathode layer 106 covers the second opening 1072b and the third opening 105a such that the cathode layer 106 is connected to the auxiliary anode layer 1032 through the second opening 1072b and the third opening 105a, and is electrically connected to the auxiliary cathode layer 1031 through the auxiliary anode layer 1032. .
  • the mask layer 108 is attached with a release film (not shown) and removed together with the mask layer 108 after the OLED layer 105 is prepared, so that the OLED display panel is not damaged.
  • another embodiment of a method for fabricating an OLED display panel of the present invention includes:
  • steps S101 to S105 in an embodiment of the method for fabricating the OLED display panel, and details are not described herein again.
  • a mask layer 408 is attached, and the mask layer 408 is provided with an opening corresponding to the anode layer 404.
  • the mask layer 408 covers the entire OLED display panel, and the corresponding anode layer 404 is provided with an opening.
  • mask layer 408 is prepared by a yellow light process.
  • the OLED layer 405 covers the first opening 4072a to be connected to the anode layer 404.
  • the OLED layer 405 covers only the first opening 4072a.
  • the cathode layer 406 covers the second opening 4072b such that the cathode layer 406 is connected to the auxiliary anode layer 4032 through the second opening 4072b and electrically connected to the auxiliary cathode layer 4031 through the auxiliary anode layer 4032.
  • the mask layer 48 is attached with a release film (not shown) and removed together with the mask layer 408 after the OLED layer 405 is prepared, so that the OLED display panel is not damaged.
  • the invention increases the driving voltage difference of the OLED device at the edge of the screen and the center of the screen by adding the auxiliary cathode layer and the auxiliary anode layer in the OLED device, and electrically connecting the cathode layer and the auxiliary cathode layer, so that the screen display is more uniform and displayed. Better results.

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Abstract

提供一种OLED器件、OLED显示面板及制备方法，OLED器件包括依次设置的基板（101）、栅极保护层（1022）、刻蚀阻挡层（1024）、辅助阴极层（1031）、辅助阳极层（1032）；依次设置于基板上的薄膜晶体管（102）、阳极层（104）和OLED层（105）；设置于OLED层和辅助阳极层上的阴极层（106）；其中，阴极层与辅助阴极层电性连接。通过在OLED器件中增加辅助阴极层和辅助阳极层，并使得阴极层与辅助阴极层电性连接，可以减小屏幕边缘和屏幕中心的OLED器件的驱动电压差距，使屏幕显示更均匀，显示效果更好。

Description

一种OLED器件、OLED显示面板及制备方法
【技术领域】
本发明涉及显示技术领域，特别涉及一种OLED器件、OLED显示面板及制备方法。
【背景技术】
OLED（Organic Light-Emitting Diode，有机发光二极管）显示器以其自发光、全固态、高对比度等优点，成为近年来最具潜力的显示器。在大尺寸OLED显示器应用方面，目前大多采用底发射型OLED显示器，其阴极采用较厚的金属层。但是受到开口率的限制，使得底发射型OLED显示器难以实现高分辨率。因此，人们希望通过顶发射型OLED显示器实现更高的分辨率。
本申请的发明人在长期的研发中发现，顶发射型OLED显示器的阴极使用较薄的透明金属。为了兼顾透光率，顶发射型OLED显示器的透明阴极厚度较薄，导致导电能力差。特别是在大尺寸OLED显示器中，屏幕中心区离电极接口较远，长距离的电流传输会使得驱动电压上升较大，造成屏幕边缘和屏幕中心的OLED器件的驱动电压差距较大，即压降（IR drop）问题，使得屏幕显示不均匀。
【发明内容】
本发明提供一种OLED器件、OLED显示面板及制备方法，以解决现有技术中大尺寸OLED显示器的屏幕边缘和屏幕中心的OLED器件的驱动电压差距较大，使得屏幕显示不均匀的技术问题。
为解决上述技术问题，本发明采用的一个技术方案是提供一种OLED器件，包括：
依次层叠设置的基板、栅极保护层、刻蚀阻挡层、辅助阴极层、辅助阳极层；
薄膜晶体管，设置于所述基板上；
阳极层，设置于所述薄膜晶体管上；OLED层，设置于所述阳极层上；
阴极层，设置于所述OLED层和所述辅助阳极层上，且通过所述辅助阳极层与所述辅助阴极层电性连接。
为解决上述技术问题，本发明采用的另一个技术方案是提供一种OLED显示面板，包括多个发光单元，每个所述发光单元包括至少一个OLED器件，其中至少一个OLED器件为如上述的OLED器件。
为解决上述技术问题，本发明采用的又一个技术方案是提供一种OLED显示面板的制备方法，包括：
依次制备基板、多个薄膜晶体管，其中，所述多个薄膜晶体管的栅极保护层延伸覆盖所述基板，所述多个薄膜晶体管的刻蚀阻挡层延伸覆盖所述栅极保护层，且至少一个薄膜晶体管构成一个发光单元；
在所述刻蚀保护层上对应所述发光单元中的至少一个薄膜晶体管制备辅助阴极层；
在所述薄膜晶体管和辅助阴极层上依次制备第一平坦层并在所述第一平坦层中设置第一通孔和第二通孔；
在所述辅助阴极层上制备阳极层、辅助阳极层，所述阳极层通过所述第一通孔与所述薄膜晶体管连接，所述辅助阳极层通过所述第二通孔与所述辅助阴极层连接；
在所述阳极层和所述辅助阳极层上制备第二平坦层并在所述第二平坦层中设置对应所述阳极层的第一开口和对应所述辅助阳极层的第二开口；
贴附掩膜层，所述掩膜层覆盖所述第二开口；
在所述第二平坦层和所述掩膜层上制备OLED层；
去除所述掩膜层，在所述OLED层上制备阴极层，所述阴极层覆盖所述第二开口并通过所述辅助阳极层与所述辅助阴极层电性连接。
本发明通过在OLED器件中增加辅助阴极层和辅助阳极层，并使得阴极层与辅助阴极层电性连接，减小屏幕边缘和屏幕中心的OLED器件的驱动电压差距，使屏幕显示更均匀，显示效果更好。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，其中：
图1是本发明OLED器件实施例的结构示意图；
图2是本发明OLED显示面板一实施例的结构示意图；
图3是本发明OLED显示面板另一实施例的结构示意图；
图4是本发明OLED显示面板的制备方法一实施例的流程示意图；
图5a-图5j是本发明OLED显示面板的制备方法一实施例的工艺流程示意图；
图6是本发明OLED显示面板的制备方法一实施例的掩膜层的结构示意图；
图7是本发明OLED显示面板的制备方法其他实施例的掩膜层的结构示意图；
图8a-图8e是本发明OLED显示面板的制备方法另一实施例的工艺流程示意图；
图9是本发明OLED显示面板的制备方法另一实施例的掩膜层的结构示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，均属于本发明保护的范围。
参见图1，本发明OLED器件实施例包括：
基板101；
可选的，基板101可以为玻璃基板、PI（Polyimide，聚酰亚胺）基板等。
薄膜晶体管102，设置于基板101上；
其中，薄膜晶体管102包括栅极层1021、栅极保护层1022、有源层1023、刻蚀阻挡层1024、源极层1025和漏极层1026，其中，刻蚀阻挡层1024上设有过孔，源极层1025和漏极层1026通过过孔与有源层1023连接。
其中，栅极保护层1022延伸设置于基板101上，刻蚀阻挡层1024延伸设置于栅极保护层1022上。
辅助阴极层1031，设置于刻蚀阻挡层1024上；
可选的，辅助阴极层1031不与源极层1025或漏极层1026接触。
第一平坦层1071，覆盖设置于薄膜晶体管102和辅助阴极层1031上，第一平坦层1071分别对应薄膜晶体管102和辅助阴极层1031设有第一通孔1071a和第二通孔1071b；
阳极层104，设置于第一平坦层1071上，阳极层104的至少一部分容置于第一通孔1071a，阳极层104通过第一通孔1071a与薄膜晶体管102连接；
辅助阳极层1032，设置于第一平坦层1071上，辅助阳极层1032的至少一部分容置于第二通孔1071b，辅助阳极层1032通过第二通孔1071b与辅助阴极层1031连接；
第二平坦层1072，设置于第一平坦层1071上且覆盖阳极层104和辅助阳极层1032，且分别对应阳极层104和辅助阳极层1032设有第一开口1072a和第二开口1072b；
OLED层105，设置于第二平坦层1072上，且OLED层105覆盖第一开口1072a，以与阳极层104连接；OLED层105对应第二开口1072b设有第三开口105a；
可选的，OLED层105可以包括红光发光材料、绿光发光材料、蓝光发光材料或白光发光材料。
阴极层106，设置于OLED层105和辅助阳极层1032上，阴极层106覆盖第二开口1072b和第三开口105a，以使得阴极层106通过第二开口1072b和第三开口105a与辅助阳极层1032连接，并通过辅助阳极层1032与辅助阴极层1031电性连接。
可选的，辅助阴极层1031和辅助阳极层1032由导电材料制成。
本发明通过在OLED器件中增加辅助阴极层和辅助阳极层，并使得阴极层与辅助阴极层电性连接，减小屏幕边缘和屏幕中心的OLED器件的驱动电压差距，使屏幕显示更均匀，显示效果更好。
参见图2，本发明OLED显示面板一实施例包括多个发光单元20，每个发光单元20包括至少一个OLED器件，其中至少一个OLED器件204为如上述的OLED器件实施例中的OLED器件。
在本实施例中，发光单元20包括红光OLED器件201、绿光OLED器件202、蓝光OLED器件203和白光OLED器件204，其中，白光OLED器件204包括辅助阴极层2041，OLED显示面板的阴极层与辅助阴极层2041电性连接，以减小OLED显示面板的压降问题。
可选的，OLED器件204也可以是红光OLED器件、绿光OLED器件或蓝光OLED器件。
参见图3，本发明OLED显示面板另一实施例包括多个发光单元30，每个发光单元30包括至少一个OLED器件，其中至少一个OLED器件304为如上述的OLED器件实施例中的OLED器件。
在本实施例中，发光单元30包括红光OLED器件301、绿光OLED器件302、蓝光OLED器件303和白光OLED器件304，其中，每个OLED器件中都包括如白光OLED器件304中的辅助阴极层3041，OLED显示面板的阴极层与每个OLED器件中的辅助阴极层电性连接，以减小OLED显示面板的压降问题。
本发明通过在OLED器件中增加辅助阴极层和辅助阳极层，并使得阴极层与辅助阴极层电性连接，减小屏幕边缘和屏幕中心的OLED器件的驱动电压差距，使屏幕显示更均匀，显示效果更好。
参考图4至图6，本发明OLED显示面板的制备方法一实施例包括：
S101、依次制备基板101、多个薄膜晶体管102，其中，至少一个薄膜晶体管102构成一个发光单元10；
具体的，在基板101上依次制备栅极层1021、栅极保护层1022、有源层1023、刻蚀阻挡层1024，在刻蚀阻挡层1024上制备过孔，在刻蚀阻挡层1024制备源极层1025和漏极层1026，并使得源极层1025和漏极层1026分别通过过孔与有源层1023连接。栅极层1021、栅极保护层1022、有源层1023、刻蚀阻挡层1024、源极层1025和漏极层1026构成薄膜晶体管102。
其中，多个薄膜晶体管102的栅极保护层1022延伸设置于基板101上，多个薄膜晶体管102的刻蚀阻挡层1024延伸设置于栅极保护层1022上。
S102、在刻蚀保护层1024上对应发光单元10中的至少一个薄膜晶体管102制备辅助阴极层1031；
可选的，辅助阴极层1031不与源极层1025或漏极层1026接触。
S103、在薄膜晶体管102和辅助阴极层1031上制备第一平坦层1071；
其中，制备第一平坦层1071后，在第一平坦层1071制备第一通孔1071a和第二通孔1071b。
S104、在第一平坦层1071上制备阳极层104、辅助阳极层1032；
其中，阳极层104的至少一部分容置于第一通孔1071a，阳极层104通过第一通孔1071a与薄膜晶体管102连接。辅助阳极层1032与阳极层104同层设置且不相互接触。辅助阳极层1032的至少一部分容置于第二通孔1071b，辅助阳极层1032通过第二通孔1071b与辅助阴极层1031连接；
S105、在阳极层104和辅助阳极层1032上制备第二平坦层1072；
其中，制备第二平坦层1072后，在第二平坦层1072，制备第一开口1072a和第二开口1072b；
S106、贴附掩膜层108，掩膜层108覆盖第二开口1072b；
具体的，如图6所示，掩膜层108仅覆盖第二平坦层1072对应辅助阳极层的区域1081，对应显示面板的其他区域镂空。
可选的，掩膜层108通过黄光工艺制备。
在其他实施例中，每个薄膜晶体管都对应设置有辅助阴极层和辅助阳极层，则如图7所示，掩膜层108设置为覆盖第二平坦层对应每个辅助阳极层的区域1082，对应显示面板的其他区域镂空。
S107、在第二平坦层1072和掩膜层108上制备OLED层105；
其中，OLED层105覆盖第一开口1072a，以与阳极层104连接。
S108、去除掩膜层108，在OLED层105上制备阴极层106，使得阴极层106与辅助阴极层1031电性连接。
其中，OLED层105在掩膜层108的作用下形成第三开口105a。阴极层106覆盖第二开口1072b和第三开口105a，以使得阴极层106通过第二开口1072b和第三开口105a与辅助阳极层1032连接，并通过辅助阳极层1032与辅助阴极层1031电性连接。
可选的，贴附掩膜层108前贴附离型膜（图中未示出），并在制备OLED层105后与掩膜层108一同去除，使得OLED显示面板不被损伤。
参考图8a至图9，本发明OLED显示面板的制备方法另一实施例包括：
S201、依次制备基板401、多个薄膜晶体管402、辅助阴极层4031、第一平坦层4071、阳极层404、辅助阳极层4032、第二平坦层4072；
具体的，制备过程参见上述OLED显示面板的制备方法一实施例中的步骤S101至S105，在此不再赘述。
S202、贴附掩膜层408，掩膜层408对应阳极层404设有开孔。
具体的，如图9所示，掩膜层408覆盖整个OLED显示面板，对应阳极层404设有开孔。
可选的，掩膜层408通过黄光工艺制备。
S203、在掩膜层408上制备OLED层405；
其中，OLED层405覆盖第一开口4072a，以与阳极层404连接。
S204、去除掩膜层408，在OLED层405上制备阴极层406，使得阴极层406与辅助阴极层4031电性连接。
其中，OLED层405仅覆盖第一开口4072a。阴极层406覆盖第二开口4072b，以使得阴极层406通过第二开口4072b与辅助阳极层4032连接，并通过辅助阳极层4032与辅助阴极层4031电性连接。
可选的，贴附掩膜层48前贴附离型膜（图中未示出），并在制备OLED层405后与掩膜层408一同去除，使得OLED显示面板不被损伤。
本发明通过在OLED器件中增加辅助阴极层和辅助阳极层，并使得阴极层与辅助阴极层电性连接，减小屏幕边缘和屏幕中心的OLED器件的驱动电压差距，使屏幕显示更均匀，显示效果更好。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (16)

  1. 一种OLED显示面板，其中，包括多个发光单元，每个所述发光单元包括至少一个OLED器件，其中至少一个OLED器件包括：
    依次层叠设置的基板、栅极保护层、刻蚀阻挡层、辅助阴极层、辅助阳极层；
    薄膜晶体管，设置于所述基板上；
    第一平坦层，覆盖设置于所述薄膜晶体管和所述辅助阴极层上，且分别对应所述薄膜晶体管和所述辅助阴极层设有第一通孔和第二通孔，所述第一通孔用于容置阳极层，所述第二通孔用于容置所述辅助阳极层；
    阳极层，设置于所述薄膜晶体管上；
    第二平坦层，设置于所述第一平坦层上且覆盖所述阳极层和所述辅助阳极层，且分别对应所述阳极层和所述辅助阳极层设有第一开口和第二开口，所述第一开口用于容置OLED层和阴极层，所述第二开口用于容置所述阴极层；
    OLED层，设置于所述阳极层和所述第二平坦层上，且覆盖所述第一开口；
    阴极层，设置于所述OLED层和所述辅助阳极层上，且通过所述辅助阳极层与所述辅助阴极层电性连接。
  2. 根据权利要求1所述的OLED显示面板，其中，
    所述OLED层覆盖设置于所述第二平坦层上，且对应所述第二开口设有第三开口。
  3. 一种OLED器件，其中，包括：
    依次层叠设置的基板、栅极保护层、刻蚀阻挡层、辅助阴极层、辅助阳极层；
    薄膜晶体管，设置于所述基板上；
    阳极层，设置于所述薄膜晶体管上；
    OLED层，设置于所述阳极层上；
    阴极层，设置于所述OLED层和所述辅助阳极层上，且通过所述辅助阳极层与所述辅助阴极层电性连接。
  4. 根据权利要求3所述的OLED器件，其中，还包括：
    第一平坦层，覆盖设置于所述薄膜晶体管和所述辅助阴极层上，且分别对应所述薄膜晶体管和所述辅助阴极层设有第一通孔和第二通孔，所述第一通孔用于容置所述阳极层，所述第二通孔用于容置所述辅助阳极层；
    第二平坦层，设置于所述第一平坦层上且覆盖所述阳极层和所述辅助阳极层，且分别对应所述阳极层和所述辅助阳极层设有第一开口和第二开口，所述第一开口用于容置所述OLED层和所述阴极层，所述第二开口用于容置所述阴极层。
  5. 根据权利要求4所述的OLED器件，其中，
    所述OLED层设置于所述第二平坦层上且覆盖所述第一开口。
  6. 根据权利要求4所述的OLED器件，其中，
    所述OLED层覆盖设置于所述第二平坦层上，且对应所述第二开口设有第三开口。
  7. 根据权利要求3所述的OLED器件，其中，
    所述基板为玻璃基板或PI基板。
  8. 根据权利要求3所述的OLED器件，其中，所述薄膜晶体管包括：
    栅极层、延伸设置于所述基板上的栅极保护层、有源层、延伸设置于所述栅极保护层上的刻蚀阻挡层、源极层和漏极层。
  9. 根据权利要求8所述的OLED器件，其中，
    所述刻蚀阻挡层上设有过孔，所述源极层和漏极层通过所述过孔与所述有源层连接。
  10. 根据权利要求3所述的OLED器件，其中，
    所述OLED层包括红光发光材料、绿光发光材料、蓝光发光材料或白光发光材料。
  11. 一种OLED显示面板的制备方法，其中，包括：
    依次制备基板、多个薄膜晶体管，其中，所述多个薄膜晶体管的栅极保护层延伸设置于所述基板上，所述多个薄膜晶体管的刻蚀阻挡层延伸设置于所述栅极保护层上，且至少一个薄膜晶体管构成一个发光单元；
    在所述刻蚀保护层上对应所述发光单元中的至少一个薄膜晶体管制备辅助阴极层；
    在所述薄膜晶体管和辅助阴极层上制备第一平坦层并在所述第一平坦层中设置第一通孔和第二通孔；
    在所述第一平坦层上制备阳极层、辅助阳极层，所述阳极层通过所述第一通孔与所述薄膜晶体管连接，所述辅助阳极层通过所述第二通孔与所述辅助阴极层连接；
    在所述阳极层和所述辅助阳极层上制备第二平坦层并在所述第二平坦层中设置对应所述阳极层的第一开口和对应所述辅助阳极层的第二开口；
    贴附掩膜层，所述掩膜层覆盖所述第二开口；
    在所述第二平坦层和所述掩膜层上制备OLED层；
    去除所述掩膜层，在所述OLED层上制备阴极层，所述阴极层覆盖所述第二开口并通过所述辅助阳极层与所述辅助阴极层电性连接。
  12. 根据权利要求11所述的制备方法，其中，
    所述OLED层在掩膜层的作用下形成第三开口，所述阴极层覆盖所述第三开口。
  13. 根据权利要求11所述的制备方法，其中，
    所述掩膜层仅覆盖所述第二平坦层对应所述辅助阳极层的区域，对应所述显示面板的其他区域镂空。
  14. 根据权利要求11所述的制备方法，其中，
    所述掩膜层对应所述阳极层设有开孔。
  15. 根据权利要求11所述的制备方法，其中，
    所述掩膜层通过黄光工艺制备。
  16. 根据权利要求11所述的制备方法，其中，
    贴附所述掩膜层前贴附离型膜，并在制备OLED层后与所述掩膜层一同去除，使得所述OLED显示面板不被损伤。
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