WO2019075813A1 - 微型led显示面板及微型led显示器 - Google Patents

微型led显示面板及微型led显示器 Download PDF

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Publication number
WO2019075813A1
WO2019075813A1 PCT/CN2017/111253 CN2017111253W WO2019075813A1 WO 2019075813 A1 WO2019075813 A1 WO 2019075813A1 CN 2017111253 W CN2017111253 W CN 2017111253W WO 2019075813 A1 WO2019075813 A1 WO 2019075813A1
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Prior art keywords
substrate
disposed
signal line
electrically connected
led display
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PCT/CN2017/111253
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English (en)
French (fr)
Inventor
黎蔚
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深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US15/737,285 priority Critical patent/US10461121B2/en
Priority to JP2020535282A priority patent/JP6902168B2/ja
Priority to EP17929205.7A priority patent/EP3699959A4/en
Priority to KR1020207014092A priority patent/KR102284757B1/ko
Publication of WO2019075813A1 publication Critical patent/WO2019075813A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes

Definitions

  • the present invention relates to the field of LED display, and in particular to a miniature LED display panel and a miniature LED display.
  • Micro LED technology namely LED miniaturization and matrixing technology.
  • Micro LED Display is the underlying LED display driver circuit made with normal CMOS integrated circuit manufacturing process. The LED array is then fabricated on the integrated circuit using a MOCVD machine.
  • the display panel based on the LED miniaturization technology is not provided in the prior art, and the wiring and structure of the display panel based on the LED miniaturization technology are in a blind zone.
  • the invention provides a miniature LED display panel comprising:
  • a second substrate having a cathode driving circuit disposed on a side thereof facing the first substrate;
  • N row signal lines which are disposed on the first substrate
  • An insulating layer disposed on the first substrate and the row signal control line;
  • each LED light-emitting component remote from the first substrate is connected to the second substrate and electrically connected to the cathode driving circuit;
  • Each of the LED lighting components includes:
  • the first thin film transistor is disposed on the first substrate, the source thereof is electrically connected to the corresponding column signal line, and the gate thereof is electrically connected to the row signal line of the corresponding row;
  • the second thin film transistor is disposed on the first substrate, the source thereof is connected to the compensation signal line of the corresponding column, and the gate thereof is electrically connected to the drain of the first thin film transistor;
  • connection metal layer is disposed on the first substrate and electrically connected to the row of signal lines;
  • the second connecting metal layer is disposed on the insulating layer, the first connecting metal layer and the second connecting metal layer are partially opposite each other to form a storage capacitor;
  • a light emitting unit one end of the light emitting unit is electrically connected to the cathode driving circuit, and the other end is electrically connected to the second connecting metal layer and the drain of the second thin film transistor;
  • the insulating layer is a silicon nitride layer or a silicon dioxide layer
  • the first substrate and the second substrate are both glass substrates
  • the light emitting unit is an inorganic LED.
  • the light emitting unit is disposed on the first substrate by a screen printing process, a spraying process or a silver glue dot printing process.
  • the row signal line, the column signal line, and the compensation signal line are all formed by a yellow light process.
  • the invention also provides a miniature LED display panel comprising:
  • a second substrate having a cathode driving circuit disposed on a side thereof facing the first substrate;
  • N row signal lines which are disposed on the first substrate
  • An insulating layer disposed on the first substrate and the row signal control line;
  • each LED light-emitting component remote from the first substrate is connected to the second substrate and electrically connected to the cathode driving circuit.
  • each of the LED lighting components comprises:
  • the first thin film transistor is disposed on the first substrate, the source thereof is electrically connected to the corresponding column signal line, and the gate thereof is electrically connected to the row signal line of the corresponding row;
  • the second thin film transistor is disposed on the first substrate, the source thereof is connected to the compensation signal line of the corresponding column, and the gate thereof is electrically connected to the drain of the first thin film transistor;
  • connection metal layer is disposed on the first substrate and electrically connected to the row of signal lines;
  • the second connecting metal layer is disposed on the insulating layer, the first connecting metal layer and the second connecting metal layer are partially opposite each other to form a storage capacitor;
  • the light emitting unit has one end electrically connected to the cathode driving circuit and the other end electrically connected to the second connecting metal layer and the drain of the second thin film transistor.
  • the insulating layer is a silicon nitride layer or a silicon dioxide layer.
  • the first substrate and the second substrate are both glass substrates.
  • the light emitting unit is an inorganic LED.
  • the light emitting unit is disposed on the first substrate by a screen printing process.
  • the light emitting unit is disposed on the first substrate by a spraying process.
  • the light emitting unit is disposed on the first substrate by a silver paste printing process.
  • the row signal line, the column signal line, and the compensation signal line are all formed by a yellow light process.
  • the present invention also provides a miniature LED display comprising a miniature LED display panel, the micro LED display panel comprising:
  • a second substrate having a cathode driving circuit disposed on a side thereof facing the first substrate;
  • N row signal lines which are disposed on the first substrate
  • An insulating layer disposed on the first substrate and the row signal control line;
  • each LED light-emitting component remote from the first substrate is connected to the second substrate and electrically connected to the cathode driving circuit.
  • each of the LED lighting assemblies includes:
  • the first thin film transistor is disposed on the first substrate, the source thereof is electrically connected to the corresponding column signal line, and the gate thereof is electrically connected to the row signal line of the corresponding row;
  • the second thin film transistor is disposed on the first substrate, the source thereof is connected to the compensation signal line of the corresponding column, and the gate thereof is electrically connected to the drain of the first thin film transistor;
  • connection metal layer is disposed on the first substrate and electrically connected to the row of signal lines;
  • the second connecting metal layer is disposed on the insulating layer, the first connecting metal layer and the second connecting metal layer are partially opposite each other to form a storage capacitor;
  • the light emitting unit has one end electrically connected to the cathode driving circuit and the other end electrically connected to the second connecting metal layer and the drain of the second thin film transistor.
  • the insulating layer is a silicon nitride layer or a silicon dioxide layer.
  • the first substrate and the second substrate are both glass substrates.
  • the light emitting unit is an inorganic LED.
  • the light emitting unit is disposed on the first substrate by a screen printing process, a spraying process or a silver glue printing process.
  • the row signal line, the column signal line, and the compensation signal line are all formed by a yellow light process.
  • the present invention provides a function of a micro LED display panel and a micro LED display by disposing a cathode driving circuit on a first substrate, and providing a row signal line, a column signal line, and a compensation signal on the second substrate, and
  • the illumination switch control and the luminous flux control of the light-emitting component can be realized by the row signal line, the column signal line, and the compensation signal.
  • FIG. 1 is a schematic plan view showing a micro LED display panel of the present invention.
  • FIG. 2 is a schematic cross-sectional structural view of a micro LED display panel of the present invention.
  • FIG. 3 is a partial circuit schematic diagram of a micro LED display panel of the present invention.
  • the micro LED display panel includes a first substrate 10 , a second substrate 20 , N row signal lines 30 , an insulating layer 40 , M column signal lines 50 , and M compensation signal lines. 60 and a plurality of LED lighting assemblies 70.
  • the plurality of LED lighting assemblies 70 are distributed in an array.
  • the first substrate 10 is a glass substrate.
  • the second substrate 20 is a glass substrate.
  • a cathode driving circuit 21 is provided on one surface of the second substrate 20 facing the first substrate 10.
  • the cathode driving circuit 21 can be formed on the second substrate 20 by a yellow light process.
  • the N row signal lines 30 are all disposed on the first substrate 10 . Each row signal line 30 is used to provide a first electrical signal to the LED lighting assembly 70 of the corresponding row.
  • the insulating layer 40 is disposed on the first substrate 10 and the row signal control line 30.
  • the insulating layer 40 may be a silicon nitride layer or a silicon dioxide layer and formed by chemical vapor deposition.
  • the M column signal lines 50 are all disposed on the insulating layer 40, and each column of signal lines is used to provide a second electrical signal to the LED lighting assembly 70 of the corresponding column.
  • the M compensation signal lines 60 are disposed on the insulating layer 40, and each compensation signal line is used to provide a compensation signal to the LED lighting assembly 70 of the corresponding column.
  • the plurality of LED light-emitting components 70 are arranged on the first substrate 10 in an array of M rows and N columns, and one end of each of the LED light-emitting components 70 remote from the first substrate 10 is connected to the second substrate 20 and is connected to the cathode driving circuit. 21 is electrically connected, and each of the LED lighting assemblies 70 is electrically connected to the row signal line 30 of the corresponding row, the compensation signal line 60 of the corresponding column, and the column signal line 50 of the corresponding column.
  • the row signal line 30 includes a first sub-line signal 30a and a second sub-line signal line 30b.
  • the LED lighting assembly 70 includes a light emitting unit 71, a first connection metal layer 72, a second connection metal layer 73, a first thin film transistor 75, and a second thin film transistor 74.
  • the light emitting unit 71 is an inorganic LED.
  • the light emitting unit 71 may be disposed on the first substrate 10 by a spraying process.
  • the light emitting unit 71 may be disposed on the first substrate 10 by a silver paste printing process.
  • the light emitting unit 71 is disposed on the first substrate 10 by a screen printing process.
  • the first thin film transistor 75 is disposed on the first substrate 10, the source thereof is electrically connected to the corresponding column signal line 50, and the gate thereof is electrically connected to the second sub-line signal line 30b of the row signal line 30 of the corresponding row. Its drain is electrically connected to the gate of the second thin film transistor 74.
  • the second thin film transistor 74 is disposed on the first substrate 10, and the source thereof is electrically connected to the compensation signal line 60 of the corresponding column.
  • the first connection metal layer 72 is disposed on the first substrate 10, and is located in the same layer as the row signal line 30.
  • the first connection metal layer 72 is electrically connected to the first sub-line signal line 30a of the row signal line 30.
  • a metal layer is formed on the first substrate 10, and then the metal layer is patterned to form the plurality of row signal lines 30 and the first connection metal layer 72, respectively.
  • the second connection metal layer 73 is disposed on the first substrate 10. Specifically, the second connection metal layer 73 is disposed on the insulating layer 40. The first connecting metal layer 72 and the second connecting metal layer 73 are partially opposite each other to form a storage capacitor C. The second connection metal layer 73 is located on the same layer as the column signal line 50 and the compensation signal line 60.
  • the anode of the light emitting unit 71 is connected to the second connection metal layer 73 and the drain of the second thin film transistor 74.
  • the cathode of the light emitting unit 71 is electrically connected to the cathode drive circuit 21 on the second substrate 20.
  • a metal layer may be deposited on the insulating layer 40, and then the metal layer is patterned to form the second connecting metal layer 73 and the column signal line 50 and the compensation signal line 60, respectively.
  • the column signal line provides a second electrical signal to the source of the first thin film transistor.
  • the row signal line provides a first electrical signal to the storage capacitor C1 and the gate of the first thin film transistor.
  • the compensation signal line provides a compensation voltage signal to the source of the second thin film transistor.
  • the first electrical signal supplies power to the anode of the light emitting unit through the storage capacitor C1, thereby driving the light emitting unit to emit light.
  • the first electrical signal turns on the first thin film transistor, so that the second electrical signal is transmitted to the gate of the second thin film transistor, thereby turning on the second thin film transistor, and the second thin film transistor is turned on
  • the compensation voltage signal is transmitted to the anode of the light emitting unit, thereby increasing the compensation current to the light emitting unit to adjust its light emitting brightness.
  • Embodiments of the present invention also provide a miniature LED display including the micro LED display panel in the above embodiment.
  • the present invention provides a function of a micro LED display panel and a micro LED display by disposing a cathode driving circuit on a first substrate, and providing a row signal line, a column signal line, and a compensation signal on the second substrate, and
  • the illumination switch control and the luminous flux control of the light-emitting component can be realized by the row signal line, the column signal line, and the compensation signal.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

本发明提供了一种微型LED显示面板及微型LED显示器。微型LED显示面板包括：第一基板；第二基板，其朝向第一基板的一面上设置有阴极驱动电路；N根行信号线，其设置于第一基板上；绝缘层，其设置于第一基板以及行信号控制线上；M根列信号线，其设置于绝缘层上；M根补偿信号线，其设置于绝缘层上；多个LED发光组件，该多个LED发光组件呈M行N列阵列的排布于第一基板上。

Description

微型LED显示面板及微型LED显示器 技术领域
本发明涉及LED显示领域，特别是涉及一种微型LED显示面板及微型LED显示器。
 背景技术
Micro LED技术，即LED微缩化和矩阵化技术。Micro LED display是底层用正常的CMOS集成电路制造工艺制成LED显示驱动电路。然后再用MOCVD机在集成电路上制作LED阵列。
但是，现有技术中并未提供一种基于LED微缩化技术的显示面板，基于LED微缩化技术的显示面板的布线以及结构均处于盲区。
因此，现有技术存在缺陷，急需改进。
 技术问题
本发明的目的在于提供一种微型LED显示面板及微型LED显示器。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种微型LED显示面板，包括：
第一基板；
第二基板，其朝向第一基板的一面上设置有阴极驱动电路；
N根行信号线，其设置于第一基板上；
绝缘层，其设置于第一基板以及行信号控制线上；
M根列信号线，其设置于绝缘层上；
M根补偿信号线，其设置于绝缘层上；
多个LED发光组件，该多个LED发光组件呈M行N列阵列的排布于第一基板上，其中，同一行的LED发光组件与同一行信号线电连接，同一列的LED发光组件与同一补偿信号线以及同一列信号线连接，每一LED发光组件的远离第一基板的一端与第二基板相连且与阴极驱动电路电连接；
其中每一所述LED发光组件包括：
第一薄膜晶体管，该第一薄膜晶体管设置于第一基板上，其源极与对应列信号线电连接，其栅极与对应行的行信号线电连接；
第二薄膜晶体管，该第二薄膜晶体管设置于第一基板上，其源极与对应列的补偿信号线连接，其栅极与第一薄膜晶体管的漏极电连接；
第一连接金属层，该第一连接金属层设置于第一基板且与该行信号线电连接；
第二连接金属层，该第二连接金属层设置绝缘层上，该第一连接金属层与第二连接金属层局部相互正对以形成储能电容；
发光单元，该发光单元的一端与阴极驱动电路电连接，另一端与第二连接金属层以及第二薄膜晶体管的漏极电连接；
所述绝缘层为氮化硅层或二氧化硅层；
所述第一基板以及第二基板均为玻璃基板；
所述发光单元为无机LED。
在本发明所述的微型LED显示面板中，所述发光单元采用网印工艺、喷洒工艺或银胶点印工艺设置于该第一基板上。
在本发明所述的微型LED显示面板中，所述行信号线、列信号线以及补偿信号线均采用黄光制程形成。
本发明还提供一种微型LED显示面板，包括：
第一基板；
第二基板，其朝向第一基板的一面上设置有阴极驱动电路；
N根行信号线，其设置于第一基板上；
绝缘层，其设置于第一基板以及行信号控制线上；
M根列信号线，其设置于绝缘层上；
M根补偿信号线，其设置于绝缘层上；
多个LED发光组件，该多个LED发光组件呈M行N列阵列的排布于第一基板上，其中，同一行的LED发光组件与同一行信号线电连接，同一列的LED发光组件与同一补偿信号线以及同一列信号线连接，每一LED发光组件的远离第一基板的一端与第二基板相连且与阴极驱动电路电连接。
在本发明所述的微型LED显示面板中，每一所述LED发光组件包括：
第一薄膜晶体管，该第一薄膜晶体管设置于第一基板上，其源极与对应列信号线电连接，其栅极与对应行的行信号线电连接；
第二薄膜晶体管，该第二薄膜晶体管设置于第一基板上，其源极与对应列的补偿信号线连接，其栅极与第一薄膜晶体管的漏极电连接；
第一连接金属层，该第一连接金属层设置于第一基板且与该行信号线电连接；
第二连接金属层，该第二连接金属层设置绝缘层上，该第一连接金属层与第二连接金属层局部相互正对以形成储能电容；
发光单元，该发光单元的一端与阴极驱动电路电连接，另一端与第二连接金属层以及第二薄膜晶体管的漏极电连接。
在本发明所述的微型LED显示面板中，所述绝缘层为氮化硅层或二氧化硅层。
在本发明所述的微型LED显示面板中，所述第一基板以及第二基板均为玻璃基板。
在本发明所述的微型LED显示面板中，所述发光单元为无机LED。
在本发明所述的微型LED显示面板中，所述发光单元采用网印工艺设置于该第一基板上。
在本发明所述的微型LED显示面板中，所述发光单元采用喷洒工艺设置于该第一基板上。
在本发明所述的微型LED显示面板中，所述发光单元采用银胶点印工艺设置于该第一基板上。
在本发明所述的微型LED显示面板中，所述行信号线、列信号线以及补偿信号线均采用黄光制程形成。
本发明还提供了一种微型LED显示器，其包括微型LED显示面板，所述微型LED显示面板包括：
第一基板；
第二基板，其朝向第一基板的一面上设置有阴极驱动电路；
N根行信号线，其设置于第一基板上；
绝缘层，其设置于第一基板以及行信号控制线上；
M根列信号线，其设置于绝缘层上；
M根补偿信号线，其设置于绝缘层上；
多个LED发光组件，该多个LED发光组件呈M行N列阵列的排布于第一基板上，其中，同一行的LED发光组件与同一行信号线电连接，同一列的LED发光组件与同一补偿信号线以及同一列信号线连接，每一LED发光组件的远离第一基板的一端与第二基板相连且与阴极驱动电路电连接。
在本发明所述的微型LED显示器中，每一所述LED发光组件包括：
第一薄膜晶体管，该第一薄膜晶体管设置于第一基板上，其源极与对应列信号线电连接，其栅极与对应行的行信号线电连接；
第二薄膜晶体管，该第二薄膜晶体管设置于第一基板上，其源极与对应列的补偿信号线连接，其栅极与第一薄膜晶体管的漏极电连接；
第一连接金属层，该第一连接金属层设置于第一基板且与该行信号线电连接；
第二连接金属层，该第二连接金属层设置绝缘层上，该第一连接金属层与第二连接金属层局部相互正对以形成储能电容；
发光单元，该发光单元的一端与阴极驱动电路电连接，另一端与第二连接金属层以及第二薄膜晶体管的漏极电连接。
在本发明所述的微型LED显示器中，所述绝缘层为氮化硅层或二氧化硅层。
在本发明所述的微型LED显示器中，所述第一基板以及第二基板均为玻璃基板。
在本发明所述的微型LED显示器中，所述发光单元为无机LED。
在本发明所述的微型LED显示器中，所述发光单元采用网印工艺、喷洒工艺或银胶点印工艺设置于该第一基板上。
在本发明所述的微型LED显示器中，所述行信号线、列信号线以及补偿信号线均采用黄光制程形成。
 有益效果
本发明相对于现有技术，通过在第一基板上设置阴极驱动电路，在第二基板上设置行信号线、列信号线以及补偿信号，从而实现微型LED显示面板及微型LED显示器的功能，且可以通过行信号线、列信号线以及补偿信号来实现对发光组件的发光开关控制以及光通量控制。
 附图说明
图1是本发明的微型LED显示面板的一种平面结构示意图。
图2是本发明的微型LED显示面板的一种剖面结构示意图。
图3是本发明的微型LED显示面板的局部电路原理图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的模块是以相同标号表示。
请参照图1、图2以及图3，该微型LED显示面板包括第一基板10、第二基板20、N根行信号线30、绝缘层40、M根列信号线50、M根补偿信号线60以及多个LED发光组件70。该多个LED发光组件70呈阵列分布。
其中，该第一基板10为玻璃基板。
其中，该第二基板20为玻璃基板。该第二基板20朝向第一基板10的一面上设置有阴极驱动电路21。该阴极驱动电路21可以采用黄光制程工艺形成于该第二基板20上。
其中，该N根行信号线30均设置于该第一基板10上。每一根行信号线30用于给对应行的LED发光组件70提供第一电信号。
其中，该绝缘层40设置于第一基板10以及行信号控制线30上。绝缘层40可以为氮化硅层或者二氧化硅层，采用化学气相沉淀法制成。
其中，该M根列信号线50均设置于绝缘层40上，每一列信号线用于给对应列的LED发光组件70提供第二电信号。
其中，该M根补偿信号线60设置于绝缘层40上，每一补偿信号线用于给对应列的LED发光组件70提供补偿信号。
其中，该多个LED发光组件70呈M行N列阵列的排布于第一基板10上，每一LED发光组件70的远离第一基板10的一端与第二基板20相连且与阴极驱动电路21电连接，每一LED发光组件70与对应行的行信号线30、对应列的补偿信号线60以及对应列的列信号线50电连接。
在实际制作中，行信号线、列信号线以及补偿信号线均采用黄光制程形成。该行信号线30包括第一子行信号30a以及第二子行信号线30b。
该LED发光组件70包括发光单元71、第一连接金属层72、第二连接金属层73、第一薄膜晶体管75以及第二薄膜晶体管74。
其中，该发光单元71为无机LED。发光单元71可以采用喷洒工艺设置于该第一基板10上。或者，该发光单元71可以采用银胶点印工艺设置于该第一基板10上。或者，发光单元71采用网印工艺设置于该第一基板10上。
第一薄膜晶体管75设置于第一基板10上，其源极与对应列信号线50电连接，其栅极与对应行的行信号线30的第二子行信号线30b电连接。其漏极与第二薄膜晶体管74的栅极电连接。第二薄膜晶体管74设置于第一基板10上，其源极与对应列的补偿信号线60连接电连接。
第一连接金属层72设置于第一基板10上，其与该行信号线30位于同一层。且该第一连接金属层72与该行信号线30的第一子行信号线30a电连接。先在该第一基板10形成一金属层，然后对该金属层进行图形化处理，以分别形成该多条行信号线30以及第一连接金属层72。
该第二连接金属层73设置于该第一基板10上。具体地，该第二连接金属层73设置于该绝缘层40上。该第一连接金属层72与第二连接金属层73局部相互正对以形成储能电容C。该第二连接金属层73与列信号线50、补偿信号线60位于同一层。该发光单元71的阳极与该第二连接金属层73以及该第二薄膜晶体管74的漏极连接。该发光单元71的阴极与第二基板20上的阴极驱动电路21电连接。
在实际制作中，可以先在该绝缘层40上沉积一金属层，然后对该金属层进行图形化处理，以分别形成该第二连接金属层73与列信号线50、补偿信号线60。
工作时，该列信号线提供第二电信号给该第一薄膜晶体管的源极。该行信号线提供第一电信号给该储能电容C1以及第一薄膜晶体管的栅极。该补偿信号线提供补偿电压信号给该第二薄膜晶体管的源极。该第一电信号通过该储能电容C1给该发光单元的阳极供电，从而驱动该发光单元发光。该第一电信号将该第一薄膜晶体管打开，使得该第二电信号传递至该第二薄膜晶体管的栅极处，从而将该第二薄膜晶体管导通，该第二薄膜晶体管导通使得该补偿电压信号传递至该发光单元的阳极处，从而提高补偿电流给该发光单元，以调节其发光亮度。
本发明实施例还提供了一种微型LED显示器，其包括上述实施例中的微型LED显示面板。
本发明相对于现有技术，通过在第一基板上设置阴极驱动电路，在第二基板上设置行信号线、列信号线以及补偿信号，从而实现微型LED显示面板及微型LED显示器的功能，且可以通过行信号线、列信号线以及补偿信号来实现对发光组件的发光开关控制以及光通量控制。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (19)

  1. 一种微型LED显示面板，其包括：
    第一基板；
    第二基板，其朝向第一基板的一面上设置有阴极驱动电路；
    N根行信号线，其设置于第一基板上；
    绝缘层，其设置于第一基板以及行信号控制线上；
    M根列信号线，其设置于绝缘层上；
    M根补偿信号线，其设置于绝缘层上；
    多个LED发光组件，该多个LED发光组件呈M行N列阵列的排布于第一基板上，其中，同一行的LED发光组件与同一行信号线电连接，同一列的LED发光组件与同一补偿信号线以及同一列信号线连接，每一LED发光组件的远离第一基板的一端与第二基板相连且与阴极驱动电路电连接；
    其中每一所述LED发光组件包括：
    第一薄膜晶体管，该第一薄膜晶体管设置于第一基板上，其源极与对应列信号线电连接，其栅极与对应行的行信号线电连接；
    第二薄膜晶体管，该第二薄膜晶体管设置于第一基板上，其源极与对应列的补偿信号线连接，其栅极与第一薄膜晶体管的漏极电连接；
    第一连接金属层，该第一连接金属层设置于第一基板且与该行信号线电连接；
    第二连接金属层，该第二连接金属层设置绝缘层上，该第一连接金属层与第二连接金属层局部相互正对以形成储能电容；
    发光单元，该发光单元的一端与阴极驱动电路电连接，另一端与第二连接金属层以及第二薄膜晶体管的漏极电连接；
    所述绝缘层为氮化硅层或二氧化硅层；
    所述第一基板以及第二基板均为玻璃基板；
    所述发光单元为无机LED。
  2. 根据权利要求1所述的微型LED显示面板，其中所述发光单元采用网印工艺、喷洒工艺或银胶点印工艺设置于该第一基板上。
  3. 根据权利要求1所述的微型LED显示面板，其中所述行信号线、列信号线以及补偿信号线均采用黄光制程形成。
  4. 一种微型LED显示面板，其包括：
    第一基板；
    第二基板，其朝向第一基板的一面上设置有阴极驱动电路；
    N根行信号线，其设置于第一基板上；
    绝缘层，其设置于第一基板以及行信号控制线上；
    M根列信号线，其设置于绝缘层上；
    M根补偿信号线，其设置于绝缘层上；
    多个LED发光组件，该多个LED发光组件呈M行N列阵列的排布于第一基板上，其中，同一行的LED发光组件与同一行信号线电连接，同一列的LED发光组件与同一补偿信号线以及同一列信号线连接，每一LED发光组件的远离第一基板的一端与第二基板相连且与阴极驱动电路电连接。
  5. 根据权利要求4所述的微型LED显示面板，其中每一所述LED发光组件包括：
    第一薄膜晶体管，该第一薄膜晶体管设置于第一基板上，其源极与对应列信号线电连接，其栅极与对应行的行信号线电连接；
    第二薄膜晶体管，该第二薄膜晶体管设置于第一基板上，其源极与对应列的补偿信号线连接，其栅极与第一薄膜晶体管的漏极电连接；
    第一连接金属层，该第一连接金属层设置于第一基板且与该行信号线电连接；
    第二连接金属层，该第二连接金属层设置绝缘层上，该第一连接金属层与第二连接金属层局部相互正对以形成储能电容；
    发光单元，该发光单元的一端与阴极驱动电路电连接，另一端与第二连接金属层以及第二薄膜晶体管的漏极电连接。
  6. 根据权利要求5所述的微型LED显示面板，其中所述绝缘层为氮化硅层或二氧化硅层。
  7. 根据权利要求5所述的微型LED显示面板，其中所述第一基板以及第二基板均为玻璃基板。
  8. 根据权利要求5所述的微型LED显示面板，其中所述发光单元为无机LED。
  9. 根据权利要求5所述的微型LED显示面板，其中所述发光单元采用网印工艺设置于该第一基板上。
  10. 根据权利要求5所述的微型LED显示面板，其中所述发光单元采用喷洒工艺设置于该第一基板上。
  11. 根据权利要求5所述的微型LED显示面板，其中所述发光单元采用银胶点印工艺设置于该第一基板上。
  12. 根据权利要求4所述的微型LED显示面板，其中所述行信号线、列信号线以及补偿信号线均采用黄光制程形成。
  13. 一种微型LED显示器，其包括微型LED显示面板，所述微型LED显示面板包括：
    第一基板；
    第二基板，其朝向第一基板的一面上设置有阴极驱动电路；
    N根行信号线，其设置于第一基板上；
    绝缘层，其设置于第一基板以及行信号控制线上；
    M根列信号线，其设置于绝缘层上；
    M根补偿信号线，其设置于绝缘层上；
    多个LED发光组件，该多个LED发光组件呈M行N列阵列的排布于第一基板上，其中，同一行的LED发光组件与同一行信号线电连接，同一列的LED发光组件与同一补偿信号线以及同一列信号线连接，每一LED发光组件的远离第一基板的一端与第二基板相连且与阴极驱动电路电连接。
  14. 根据权利要求13所述的微型LED显示器，其中每一所述LED发光组件包括：
    第一薄膜晶体管，该第一薄膜晶体管设置于第一基板上，其源极与对应列信号线电连接，其栅极与对应行的行信号线电连接；
    第二薄膜晶体管，该第二薄膜晶体管设置于第一基板上，其源极与对应列的补偿信号线连接，其栅极与第一薄膜晶体管的漏极电连接；
    第一连接金属层，该第一连接金属层设置于第一基板且与该行信号线电连接；
    第二连接金属层，该第二连接金属层设置绝缘层上，该第一连接金属层与第二连接金属层局部相互正对以形成储能电容；
    发光单元，该发光单元的一端与阴极驱动电路电连接，另一端与第二连接金属层以及第二薄膜晶体管的漏极电连接。
  15. 根据权利要求14所述的微型LED显示器，其中所述绝缘层为氮化硅层或二氧化硅层。
  16. 根据权利要求14所述的微型LED显示器，其中所述第一基板以及第二基板均为玻璃基板。
  17. 根据权利要求14所述的微型LED显示器，其中所述发光单元为无机LED。
  18. 根据权利要求14所述的微型LED显示器，其中所述发光单元采用网印工艺、喷洒工艺或银胶点印工艺设置于该第一基板上。
  19. 根据权利要求13所述的微型LED显示器，其中所述行信号线、列信号线以及补偿信号线均采用黄光制程形成。
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