WO2019085850A1 - Igbt功率器件 - Google Patents

Igbt功率器件 Download PDF

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Publication number
WO2019085850A1
WO2019085850A1 PCT/CN2018/112338 CN2018112338W WO2019085850A1 WO 2019085850 A1 WO2019085850 A1 WO 2019085850A1 CN 2018112338 W CN2018112338 W CN 2018112338W WO 2019085850 A1 WO2019085850 A1 WO 2019085850A1
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Prior art keywords
region
type
gate
power device
igbt power
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PCT/CN2018/112338
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English (en)
French (fr)
Inventor
刘伟
袁愿林
刘磊
王睿
龚轶
Original Assignee
苏州东微半导体有限公司
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Priority claimed from CN201711058074.0A external-priority patent/CN109755304B/zh
Priority claimed from CN201711058063.2A external-priority patent/CN109755303B/zh
Priority claimed from CN201711058787.7A external-priority patent/CN109755298B/zh
Application filed by 苏州东微半导体有限公司 filed Critical 苏州东微半导体有限公司
Priority to JP2020509053A priority Critical patent/JP6947915B6/ja
Priority to KR1020207004879A priority patent/KR102292410B1/ko
Priority to US16/627,675 priority patent/US11081574B2/en
Publication of WO2019085850A1 publication Critical patent/WO2019085850A1/zh

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    • H—ELECTRICITY
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
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    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
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    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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    • H01L29/42356—Disposition, e.g. buried gate electrode
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    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Definitions

  • the present disclosure relates to the field of semiconductor power device technology, for example, to an IGBT power device.
  • Insulated Gate Bipolar Transistor (IGBT) power device is a device composed of a metal oxide semiconductor (MOS) transistor and a bipolar transistor.
  • MOS metal oxide semiconductor
  • the input of the IGBT power device is extremely MOS.
  • Transistor, the output is extremely PNP type transistor, which combines the advantages of these two transistor devices. It has the advantages of small driving power and fast switching speed of MOS transistor, and has the advantages of reduced saturation voltage and large capacity of bipolar transistor.
  • Power electronics technology has been used more and more widely, especially in the high-frequency tube and medium power tube applications occupying a higher frequency.
  • FIG. 1 A cross-sectional structural diagram of a related art IGBT power device is shown in FIG. 1, and includes a p-type collector region 31 and an n-type collector region 3 which are spaced apart at the bottom, and a p-type collector region 31 and an n-type collector region 3 pass through a set.
  • the electrode metal contact layer 70 is connected to the collector voltage.
  • the IGBT power device further includes an n-type field stop region 32 over the p-type collector region 31 and the n-type collector region 3, and an n-type drift region 30 over the n-type field stop region 32, in the n-type drift
  • At least two p-type body regions 33 are provided in the region 30, and a body diode structure parasitic in the IGBT power device is formed between the p-type body region 33 and the n-type drift region 30.
  • a p-type body contact region 38 and an n-type source region 34 are provided in the p-type body region 33, and the n-type source region 34 and the p-type body region contact region 38 are connected to the emitter voltage through the emitter metal contact layer 47.
  • the doping concentration of the p-type body contact region 38 is higher than the maximum peak of the doping concentration of the p-type body region 33, so that an ohmic contact structure is formed between the p-type body region contact region 38 and the emitter metal contact layer 47.
  • the IGBT power device also includes a gate dielectric layer 35 and a gate 36 over the current channel of the device.
  • the insulating dielectric layer 50 is an interlayer insulating dielectric layer.
  • the turn-on and turn-off of the IGBT power device is controlled by the gate-emitter voltage.
  • the gate-emitter voltage is greater than the threshold voltage Vth of the MOS transistor, a current channel is formed inside the MOS transistor and a base is provided for the bipolar transistor. The current causes the IGBT power device to conduct.
  • the gate-emitter voltage is less than the threshold voltage Vth of the MOS transistor, the current channel in the MOS transistor is turned off, the base current of the bipolar transistor is cut off, and the IGBT power device is turned off.
  • the parasitic body diode in the IGBT power device When the IGBT power device is turned off, when the collector-emitter voltage is less than 0V, the parasitic body diode in the IGBT power device is in a positive bias state, and the reverse current flows from the emitter through the body diode to the collector. The current of the diode is injected into the minority carrier phenomenon, and these minority carriers are reversely restored when the IGBT power device is turned on again, resulting in a large reverse recovery current of the IGBT power device and a long reverse recovery time.
  • the present disclosure provides an IGBT power device having a fast reverse recovery function to solve the problem of a long reverse recovery time caused by a sub-carrier injection problem of the related art IGBT power device.
  • An IGBT power device comprising a bipolar transistor, a first MOS transistor, a second MOS transistor, a body diode and a body contact diode, wherein an anode of the body contact diode is connected to an anode of the body diode;
  • a drain of a MOS transistor is connected to a base of the bipolar transistor, a drain of the second MOS transistor, a cathode of the body diode, and an emitter of the bipolar transistor are connected and connected to the IGBT power device a collector voltage; a first gate of the first MOS transistor externally connected to a gate voltage of the IGBT power device; a collector of the bipolar transistor, a source of the first MOS transistor, and a source of the second MOS transistor The second gate of the second MOS transistor and the cathode of the body contact diode are connected and connected to the emitter voltage of the IGBT power device.
  • the collector of the bipolar transistor is coupled to the anode of the body diode.
  • a threshold voltage of the first MOS transistor is greater than a threshold voltage of the second MOS transistor.
  • An IGBT power device comprising a bipolar transistor, a first MOS transistor, a second MOS transistor, a body diode and a body contact diode, the anode of the body contact diode, the anode of the body diode, and a set of bipolar transistors
  • the electrodes are connected to each other; the drain of the first MOS transistor is connected to the base of the bipolar transistor, the drain of the second MOS transistor, the cathode of the body diode, and the emitter of the bipolar transistor Interphase connected and connected to the collector voltage of the IGBT power device;
  • the first gate of the first MOS transistor is externally connected to the gate voltage of the IGBT power device;
  • the source of the first MOS transistor and the source of the second MOS transistor The second gate of the pole, the second MOS transistor and the cathode of the body contact diode are connected and connected to the emitter voltage of the IGBT power device.
  • a threshold voltage of the first MOS transistor is greater than a threshold voltage of the second MOS transistor.
  • An IGBT power device comprising: a p-type collector region and an n-type collector region disposed at intervals, wherein the p-type collector region and the n-type collector region are connected to a collector voltage; and the p-type set is located An electrode region and an n-type field stop region above the n-type collector region, an n-type drift region above the n-type field stop region, at least two sequentially arranged in the n-type drift region a p-type body region, a first n-type source region, a second n-type source region, and a p-type body region contact region in the p-type body region; a conductive layer located above the p-type body region contact region, The conductive layer and the p-type body region contact region form a body region contact diode structure, wherein the conductive layer is a cathode of the body region contacting diode, and the p-type body region contact region is an anode of the body region contact dio
  • the conductive layer is an emitter metal contact layer over the p-type body region, and a doping concentration of the p-type body region contact region is lower than a doping of the p-type body region
  • the maximum peak concentration, the p-type body region contact region and the emitter metal contact layer form a Schottky barrier diode structure.
  • the second gate, the first n-type source region, and the second n-type source region each illuminate an emitter voltage through the emitter metal contact layer.
  • the conductive layer is an n-type polysilicon layer over the p-type body region, and the n-type polysilicon layer and the p-type body region contact region form a silicon-based body region contact diode structure.
  • the n-type polysilicon layer is in contact with the second gate, the first n-type source region, and the second n-type source region, and the n-type polysilicon layer is externally emitted through the emitter metal contact layer. Extreme voltage.
  • the n-type polysilicon layer is in contact with the first n-type source region and the second n-type source region, and the second gate and the n-type polysilicon layer are both externally connected through the emitter metal contact layer. Emitter voltage.
  • the conductive layer is an n-type doped region located in the p-type body region, and the n-type doped region and the p-type body region contact region form a silicon-based body region contact diode structure.
  • the n-type doped region, the second gate, the first n-type source region, and the second n-type source region each illuminate an emitter voltage through an emitter metal contact layer.
  • the turn-on voltage of the first current channel is greater than the turn-on voltage of the second current channel.
  • the IGBT power device further includes a gate trench, the gate trench being located between two adjacent p-type body regions and recessed in the n-type drift region, A gate dielectric layer, the first gate, and the second gate are both disposed in the gate trench.
  • the IGBT power device further includes a shield gate trench recessed in the n-type drift region, an opening of the shield gate trench being located at a bottom of the gate trench, the shield gate a third gate is disposed in the trench, and the third gate is separated from the n-type drift region, the first gate, and the second gate by an insulating dielectric layer, the third gate, The first n-type source region, the second n-type source region, the second gate, and the conductive layer are electrically connected and uniformly connected to an emitter voltage.
  • the third gate extends upward into the gate trench.
  • the IGBT power device provided by the present disclosure When the IGBT power device provided by the present disclosure is turned off, when the emitter-collector voltage is greater than 0V, the body contact diode is in a negative bias state, thereby greatly reducing the reverse current flowing through the body diode, thereby being substantially reduced.
  • the minority carrier in the body diode can reduce the reverse recovery charge and reverse recovery time of the IGBT power device, enabling the IGBT power device to achieve fast reverse recovery function; meanwhile, when the emitter-collector voltage reaches the first When the threshold voltage of the second MOS transistor (ie, the turn-on voltage of the second current channel controlled by the second gate) is turned on, the second MOS transistor is turned on, and the reverse current flows from the emitter through the second current channel to collector.
  • the threshold voltage of the second MOS transistor ie, the turn-on voltage of the second current channel controlled by the second gate
  • FIG. 1 is a schematic cross-sectional structural view of an IGBT power device of the related art
  • FIG. 2 is a schematic diagram of an equivalent circuit of an IGBT power device according to an embodiment
  • FIG. 3 is a schematic diagram of an equivalent circuit of another IGBT power device according to an embodiment
  • FIG. 4 is a schematic diagram of an equivalent circuit of another IGBT power device according to an embodiment
  • FIG. 5 is a cross-sectional structural diagram of an IGBT power device according to an embodiment
  • FIG. 6 is a schematic cross-sectional structural view of another IGBT power device according to an embodiment
  • FIG. 7 is a schematic cross-sectional structural view of another IGBT power device according to an embodiment
  • FIG. 8 is a cross-sectional structural diagram of another IGBT power device according to an embodiment.
  • FIG. 9 is a cross-sectional structural diagram of another IGBT power device according to an embodiment.
  • the IGBT power device includes a cell region and a termination region, wherein the cell region is used to obtain a low on-resistance, and the termination region is used to increase the withstand voltage of the most marginal cell in the cell region.
  • the terminal area is a general structure in the IGBT power device, and has different design structures according to the requirements of different products. The structure of the terminal area of the IGBT power device is not shown or described in this embodiment.
  • the IGBT power device described in this embodiment refers to the structure of the cell region in the IGBT power device.
  • the IGBT power device provided in this embodiment includes: a bipolar transistor 400 (a PNP transistor in this embodiment), a first MOS transistor 501, a second MOS transistor 502, a body diode 305, and a body region.
  • Contact diode 304, the anode of body contact diode 304 is coupled to the anode of body diode 305.
  • the drain of the first MOS transistor 501 is connected to the base of the bipolar transistor 400, the drain of the second MOS transistor 502, the cathode of the body diode 305, and the emitter of the bipolar transistor 400 are connected and connected to the IGBT.
  • the collector 302 of the power device such that the drain of the second MOS transistor 502, the cathode of the body diode 305, and the emitter of the bipolar transistor 400 are both connected to the collector voltage of the IGBT power device.
  • the first gate 303a of the first MOS transistor 501 is the gate 303a of the IGBT power device, so that the first gate 303a of the first MOS transistor 501 is connected to the gate voltage of the IGBT power device, and the first of the first MOS transistor 501
  • the gate 303a controls the turning on and off of the first MOS transistor 501 by the gate voltage of the IGBT power device.
  • the collector of the bipolar transistor 400, the source of the first MOS transistor 501, the source of the second MOS transistor 502, the second gate 303b of the second MOS transistor 502, and the cathode of the body contact diode 304 are connected. And connected to the emitter 301 of the IGBT power device, so that the collector of the bipolar transistor 400, the source of the first MOS transistor 501, the source of the second MOS transistor 502, and the second gate 303b of the second MOS transistor 502
  • the cathode of the body contact diode 304 is connected to the emitter voltage of the IGBT power device, and the second gate 303b of the second MOS transistor 502 controls the turn-on and turn-off of the second MOS transistor 502 by the emitter voltage of the IGBT power device.
  • the threshold voltage of the first MOS transistor 501 is greater than the threshold voltage of the second MOS transistor 502.
  • the collector of the bipolar transistor 400 can also be connected to the anode of the body diode 305 at the same time, and the equivalent circuit diagram is shown in FIG. 3, which is not described in FIG. 3 in this embodiment.
  • the IGBT power device provided in this embodiment includes: a bipolar transistor 400 (a PNP transistor in this embodiment), a first MOS transistor 501, a second MOS transistor 502, a body diode 305, and a body region.
  • the contact diode 304, the anode of the body contact diode 304, the anode of the body diode 305, and the collector of the bipolar transistor 400 are connected.
  • the drain of the first MOS transistor 501 is connected to the base of the bipolar transistor 400, the drain of the second MOS transistor 502, the cathode of the body diode 305, and the emitter of the bipolar transistor 400 are connected and connected to the IGBT.
  • the collector 302 of the power device such that the drain of the second MOS transistor 502, the cathode of the body diode 305, and the emitter of the bipolar transistor 400 are both connected to the collector voltage of the IGBT power device.
  • the first gate 303a of the first MOS transistor 501 is the gate 303a of the IGBT power device, so that the first gate 303a of the first MOS transistor 501 is connected to the gate voltage of the IGBT power device, and the first of the first MOS transistor 501
  • the gate 303a controls the turning on and off of the first MOS transistor 501 by the gate voltage of the IGBT power device.
  • the source of the first MOS transistor 501, the source of the second MOS transistor 502, the second gate 303b of the second MOS transistor 502, and the cathode of the body contact diode 304 are connected and connected to the emitter of the IGBT power device. 301, such that the source of the first MOS transistor 501, the source of the second MOS transistor 502, the second gate 303b of the second MOS transistor 502, and the cathode of the body contact diode 304 are both connected to the emitter voltage of the IGBT power device.
  • the second gate 303b of the second MOS transistor 502 controls the turn-on and turn-off of the second MOS transistor 502 by the emitter voltage of the IGBT power device.
  • the working mechanism of the IGBT power device shown in FIG. 2 to FIG. 4 is: 1) when the gate-emitter voltage of the IGBT power device reaches the threshold voltage of the first MOS transistor 501, the first current inside the first MOS transistor 501 The channel is turned on and provides a base current for the bipolar transistor 400 to turn on the IGBT power device; 2) when the gate-emitter voltage of the IGBT power device is less than the threshold voltage of the first MOS transistor 501, the first MOS transistor The first current channel inside 501 is turned off, and the base current of the bipolar transistor 400 is cut off, so that the IGBT power device is turned off.
  • the IGBT power device provided in this embodiment is turned off: when the emitter voltage is greater than the collector voltage, the body contact diode is in a negative bias state, so that the reverse current flowing through the body diode can be greatly reduced, thereby enabling a large Lowering the minority carrier in the body diode, which can greatly reduce the reverse recovery charge and reverse recovery time of the IGBT power device, enabling the IGBT power device to achieve fast reverse recovery function; meanwhile, when the emitter-collector voltage When the threshold voltage of the second MOS transistor is reached, the second current channel inside the second MOS transistor is turned on, and the reverse current flows from the emitter to the collector through the second current channel inside the second MOS transistor.
  • FIG. 5 is a cross-sectional structural diagram of an IGBT power device according to the embodiment.
  • the IGBT power device of the embodiment includes a p-type collector region 31 and an n-type collector region 3, and a p-type collector.
  • the region 31 and the n-type collector region 3 are connected to the collector voltage through the collector metal contact layer 70; the n-type field stop region 32 located above the p-type collector region 31 and the n-type collector region 3 is located in the n-type field.
  • the n-type drift region 30 above the cut-off region 32, the p-type body region 33 formed in the n-type drift region 30, and the number of p-type body regions 33 can be set according to actual product requirements, in this embodiment only The structure of the two p-type body regions 33 is exemplarily shown.
  • the p-type body region 33 is provided with a p-type body region contact region 38, a first n-type source region 34a and a second n-type source region 34b, and the p-type body region contact region 38 is generally disposed in the first n-type source region 34a and Between the second n-type source regions 34b.
  • a parasitic body diode structure in the IGBT power device is formed between the p-type body region 33 and the n-type drift region 30, wherein the p-type body region 33 is the anode of the body diode, and the n-type drift region 30 is the cathode of the body diode.
  • the IGBT power device provided in this embodiment further includes a first current channel located in the p-type body region 33 and interposed between the first n-type source region 34a and the n-type drift region 30, covering the first current channel.
  • the gate dielectric layer 35 and the first gate 36a, the first gate 36a is externally connected to the gate voltage and controls the opening and closing of the first current channel by the gate voltage.
  • the IGBT power device provided in this embodiment further includes a second current channel located in the p-type body region 33 and interposed between the second n-type source region 34b and the n-type drift region 30, covering the second current channel.
  • the turn-on voltage of the first current channel is greater than the turn-on voltage of the second current channel
  • the current channel is an accumulation layer formed on the surface of the semiconductor when the gate voltage is applied in the MOS transistor structure and The type layer, in the drawing of the embodiment, the first current channel and the second current channel in the IGBT power device are not shown.
  • the IGBT power device provided in this embodiment further includes a conductive layer 37 on the p-type body region contact region 38.
  • the conductive layer 37 and the p-type body region contact region 38 form a body region contact diode structure, wherein the conductive layer 37 is the body.
  • the region contacts the cathode of the diode, and the p-type body contact region 38 is the anode of the body contact diode, such that the anode of the body contact diode is connected to the anode of the body diode.
  • the conductive layer 37 may be an n-type polysilicon layer or a metal layer over the p-type body region 33, so that the body region contact diode may be a silicon-based body region contact diode structure or Schottky. Barrier diode structure.
  • the second gate 36b, the first n-type source region 34a, the second n-type source region 34b and the conductive layer 37 are electrically connected and connected to an emitter voltage, whereby the cathode of the body contact diode is connected to the emitter. And the second gate 36b controls the opening and closing of the second current channel by the emitter voltage.
  • the conductive layer 37 is directly in contact with the first n-type source region 34a and the second n-type source region 34b, so that the conductive layer 37 and the second gate 36b need to be further disposed. Electrical connection.
  • FIG. 6 is a schematic cross-sectional structural view of another IGBT power device according to the embodiment, and FIG. 6 corresponds to an IGBT power device provided by the present disclosure, based on the embodiment of the IGBT power device shown in FIG.
  • the area contact diode employs an embodiment of a Schottky barrier diode structure.
  • an emitter metal contact layer 47 is formed over the p-type body region 33, and the emitter metal contact layer 47 is a conductive layer over the p-type body region contact region 38.
  • the doping concentration of the body contact region 38 needs to be lower than the maximum peak of the doping concentration of the p-type body region 33, whereby the p-type body region contact region 38 and the emitter metal contact layer 47 form a Schottky barrier diode structure.
  • the emitter metal contact layer 47 is the cathode of the Schottky barrier diode, and the p-type body region contact region 38 is the anode of the Schottky barrier diode.
  • the emitter metal contact layer 47 is directly connected to the second gate 36b, the first n-type source region 34a, and the second n-type source region 34b, and the emitter metal contact layer 47 is externally connected to the emitter voltage, whereby the second gate 36b passes The emitter voltage controls the opening and closing of the second current channel.
  • the first gate electrode 36a externally connects the gate voltage through the gate metal contact layer (the gate metal contact layer structure is not shown in FIG. 6 based on the positional relationship of the cross-sectional structure), whereby the first gate electrode 36a passes the gate voltage Controlling the opening and closing of the first current channel.
  • the emitter metal contact layer 47 and the gate metal contact layer are separated by an interlayer insulating layer 50.
  • the interlayer insulating layer 50 is usually a material such as silicon glass, borophosphosilicate glass or phosphosilicate glass.
  • the Schottky barrier diode structure can wait for The effect is an ohmic contact structure, which can reduce the reverse current flowing through the body diode to a certain extent when the IGBT power device is turned off, thereby reducing the minority carrier in the body diode, thereby reducing the reverse of the IGBT power device. Restore charge and reverse recovery time, enabling IGBT power devices to achieve fast reverse recovery.
  • the reverse recovery speed of IGBT power devices is slower than the reverse recovery speed when using body contact diodes with high contact barriers. , but faster than the reverse recovery speed of conventional IGBT power devices without body contact diode structures.
  • FIG. 7 is a schematic cross-sectional structural view of another IGBT power device according to the embodiment, and FIG. 7 corresponds to an IGBT power device provided by the present disclosure, based on the embodiment of the IGBT power device shown in FIG.
  • the contact diode employs an embodiment of a silicon-based body contact diode. As shown in FIG.
  • an n-type polysilicon layer 57 is formed over the p-type body region 33, and the n-type polysilicon layer 57 is a conductive layer located above the p-type body region contact region 38, whereby the p-type body region contacts
  • the region 38 and the n-type polysilicon layer 57 form a silicon-based body contact diode structure in which the n-type polysilicon layer 57 is the cathode of the body contact diode and the p-body contact region 38 is the anode of the body contact diode.
  • the n-type polysilicon layer 57 can be directly in contact with the second gate 36b, the first n-type source region 34a, and the second n-type source region 34b, and then the n-type polysilicon layer 57 is externally connected to the emitter voltage through the emitter metal contact layer 47. As shown in Figure 7.
  • the n-type polysilicon layer 57 may also be in direct contact connection with the first n-type source region 34a and the second n-type source region 34b, and then the second gate 36b and the n-type polysilicon layer 57 are both externally connected to the emitter through the emitter metal contact layer 47. Voltage.
  • the n-type polysilicon layer 57 is in direct contact connection with the second gate 36b, the first n-type source region 34a, and the second n-type source region 34b, and then the n-type polysilicon layer 57 passes through the emitter metal contact layer 47.
  • the emitter voltage is externally connected, whereby the second gate 36b controls the opening and closing of the second current channel by the emitter voltage.
  • the first gate electrode 36a externally connects the gate voltage through the gate metal contact layer (based on the positional relationship of the cross section, the gate metal contact layer structure is not shown in FIG. 7), whereby the first gate electrode 36a is controlled by the gate voltage.
  • the first current channel is turned on and off.
  • the emitter metal contact layer 47 and the gate metal contact layer are separated by an interlayer insulating layer 50.
  • FIG. 8 is a schematic cross-sectional structural view of another IGBT power device according to the embodiment, and FIG. 8 corresponds to another embodiment of the body contact diode structure of the IGBT power device provided by the present disclosure, which uses a silicon-based body contact diode.
  • the IGBT power device of the present embodiment includes a p-type collector region 31 and an n-type collector region 3, and the p-type collector region 31 and the n-type collector region 3 are both connected through the collector metal contact layer 70. Collector voltage.
  • the IGBT power device provided in this embodiment further includes an n-type field stop region 32 located above the p-type collector region 31 and the n-type collector region 3, and an n-type drift region 30 located above the n-type field stop region 32, A p-type body region 33 is formed in the n-type drift region 30, and the p-type body region 33 is provided with a p-type body region contact region 38, an n-type doping region 39, a first n-type source region 34a, and a second n-type.
  • the source region 34b, the p-type body region contact region 38 and the n-type doping region 39 are both located between the first n-type source region 34a and the second n-type source region 34b, and the n-type doping region 39 is located in the p-type body region contact.
  • the n-doped region 39 is the conductive layer over the p-type body region contact region 38.
  • the n-type doping region 39 and the p-type body region contact region 39 form a silicon-based body region contact diode structure, wherein the n-type doping region 39 is the cathode of the body region contact diode, and the p-type body region contact region 38 is the anode of the body contact diode.
  • a parasitic body diode structure in the IGBT power device is formed between the p-type body region 33 and the n-type drift region 30, wherein the p-type body region 33 is the anode of the body diode, and the n-type drift region 30 is the cathode of the body diode, thereby The anode of the body contact diode is connected to the anode of the body diode.
  • the IGBT power device provided in this embodiment further includes a first current channel located in the p-type body region 33 and interposed between the first n-type source region 34a and the n-type drift region 30, covering the first current channel.
  • the gate dielectric layer 35 and the first gate 36a, the first gate 36a controls the opening and closing of the first current channel by the gate voltage.
  • the IGBT power device provided in this embodiment further includes a second current channel located in the p-type body region 33 and interposed between the second n-type source region 34b and the n-type drift region, covering the gate of the second current channel The dielectric layer 35 and the second gate 36b.
  • the second gate 36b, the first n-type source region 34a, the second n-type source region 34b and the n-type doping region 39 are connected by an emitter metal contact layer 47, and the emitter metal contact layer 47 is externally connected to an emitter voltage. Thereby the second gate 36b controls the opening and closing of the second current channel by the emitter voltage.
  • the first gate electrode 36a externally connects the gate voltage through the gate metal contact layer (the gate metal contact layer structure is not shown in FIG. 8 based on the positional relationship of the cross section), whereby the first gate electrode 36a is controlled by the gate voltage.
  • the first current channel is turned on and off.
  • the emitter metal contact layer 47 and the gate metal contact layer are separated by an interlayer insulating layer 50.
  • the interlayer insulating layer 50 is usually a material such as silicon glass, borophosphosilicate glass or phosphosilicate glass.
  • FIG. 9 is a schematic cross-sectional structural view of another IGBT power device according to the embodiment.
  • the IGBT power device of the embodiment includes: a p-type collector region 20a and an n-type collector region 20b, and a p-type Both the collector region 20a and the n-type collector region 20b are externally connected to the collector voltage through the collector metal contact layer 70.
  • the IGBT power device provided in this embodiment further includes an n-type field stop region 21 located above the p-type collector region 20a and the n-type collector region 20b, and an n-type drift region 22 located above the n-type field stop region 21. .
  • the IGBT power device provided in this embodiment further includes at least two p-type body regions 27 arranged in the n-type drift region 22, and only six p-type body regions 27 are exemplarily shown in FIG.
  • the body region 27 is provided with a p-type body contact region 29, a first n-type source region 28 and a second n-type source region 98.
  • the p-type body region contact region 29 is provided in the first n-type source region 28 and Between the two n-type source regions 98.
  • a parasitic body diode structure in the IGBT power device is formed between the p-type body region 27 and the n-type drift region 22, wherein the p-type body region 27 is the anode of the body diode, and the n-type drift region 22 is the cathode of the body diode.
  • the IGBT power device provided in this embodiment further includes a gate trench recessed in the n-type drift region 22 between the adjacent p-type body regions 27, and a shield trench recessed in the n-type drift region 22. a slot, wherein the opening of the shield gate trench is located at the bottom of the gate trench.
  • the opening width of the shielding gate trench may be the same as the opening width of the gate trench, or may be larger or smaller than the opening width of the gate trench.
  • the depth of the p-type body region 27 may be the same as the depth of the gate trench in the n-type drift region 22, or may be greater or smaller than the depth of the gate trench, and only the depth of the p-type body region 27 in FIG. An example is smaller than the depth of the gate trench.
  • the IGBT power device provided in this embodiment further includes a conductive layer 99 on the p-type body region contact region 29, and the conductive layer 99 and the p-type body region contact region 29 form a body region contact diode structure, wherein the conductive layer 99 is the body The region contacts the cathode of the diode, and the p-type body contact region 29 is the anode of the body contact diode. Thereby, the anode of the body contact diode is connected to the anode of the body diode.
  • the conductive layer 99 may be an n-type polysilicon layer or a metal layer, whereby the body region contact diode structure may be a Schottky barrier diode structure or a silicon-based body region contact diode structure.
  • the IGBT power device provided in this embodiment further includes a first current channel located in the p-type body region 27 between the first n-type source region 28 and the n-type drift region 22; located in the gate trench And covering the gate dielectric layer 23 and the first gate 24a of the sidewall of the gate trench near the side of the first n-type source region 28, the first gate 24a is externally connected with a gate voltage, and the first gate 24a
  • the opening and closing of the first current channel between the first n-type source region 28 and the n-type drift region 22 is controlled by the gate voltage.
  • the IGBT power device provided in this embodiment further includes a second current channel located in the p-type body region 27 between the second n-type source region 98 and the n-type drift region 22; located in the gate trench And covering the gate dielectric layer 23 and the second gate 24b of the gate trench near the sidewall surface of the second n-type source region 98 side.
  • the IGBT power device provided in this embodiment further includes a third gate 26 located in the shield gate trench, and the third gate 26 passes through the field oxide layer 25 and the n-type drift region 22, the first gate 24a, and the second The gate 24b is isolated.
  • the third gate 26 in the shield gate trench extends upward into the gate trench, and in the gate trench region, the third gate 26 directly passes through the field oxide layer. 25 is isolated from the first gate 24a and the second gate 24b.
  • the first n-type source region 28, the second n-type source region 98, the second gate 24b, the third gate 26 and the conductive layer 99 are electrically connected and uniformly connected to an emitter voltage, whereby the second gate 24b
  • the opening and closing of the second current channel between the second n-type source region 98 and the n-type drift region 22 is controlled by the emitter voltage
  • the third gate 26 is a shield gate
  • the third gate 26 is emitted.
  • the pole voltage forms a transverse electric field in the n-type drift region 22, which serves to lower the on-resistance and improve the withstand voltage.
  • the turn-on voltage of the first current channel controlled by the first gate 24a is greater than the turn-on voltage of the second current channel controlled by the second gate 24b.
  • the current channel in the IGBT power device is an accumulation layer and an inversion layer formed in the p-type body region when a voltage is applied to the gate, and in the drawing of the embodiment, the first gate in the IGBT power device Both the first current channel controlled by 24a and the second current channel controlled by the second gate 24b are not shown.
  • the conductive layer 99 is directly in contact with the first n-type source region 28 and the second n-type source region 98. Therefore, the conductive layer 99 needs to be electrically connected to the second gate 24b and the third gate 26.

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Abstract

一种IGBT功率器件，包括双极型晶体管（400）、第一MOS晶体管（501）、第二MOS晶体管（502）、体二极管（305）和体区接触二极管（304），体区接触二极管的阳极与体二极管的阳极连接双极型晶体管；第一MOS晶体管的第一栅极（303a）外接IGBT功率器件的栅极电压，第一MOS晶体管的第一栅极通过IGBT功率器件的栅极电压来控制第一MOS晶体管的开启和关断，第二MOS晶体管的第二栅极（303b）与IGBT功率器件的发射极（301）电压连接，第二MOS晶体管的第二栅极通过IGBT功率器件的发射极电压来控制第二MOS晶体管的开启和关断。

Description

IGBT功率器件
本公开要求申请日为2017年11月1日、申请号为201711058063.2，申请日为2017年11月1日、申请号为201711058074.0以及申请日为2017年11月1日、申请号201711058787.7的中国专利申请的优先权，上述申请的全部内容通过引用结合在本公开中。
技术领域
本公开涉及半导体功率器件技术领域，例如涉及一种IGBT功率器件。
背景技术
绝缘栅双极型晶体管(Insulated Gate Bipolar Translator，IGBT)功率器件是由金属氧化物半导体(Metal Oxide Semiconductor，MOS)晶体管和双极型晶体管复合而成的一种器件，IGBT功率器件的输入极为MOS晶体管，输出极为PNP型晶体管，它融合了这两种晶体管器件的优点，既具有MOS晶体管驱动功率小和开关速度快的优点，又具有双极型晶体管饱和压降低和容量大的优点，在现代电力电子技术中得到了越来越广泛的应用，特别是占据了较高频率的大功率管和中功率管应用的主导地位。
相关技术的IGBT功率器件的剖面结构示意图如图1所示，包括底部间隔设置的p型集电极区31和n型集电极区3，p型集电极区31和n型集电极区3通过集电极金属接触层70接集电极电压。IGBT功率器件还包括：在p型集电极区31和n型集电极区3之上的n型场截止区32，在n型场截止区32之上的n型漂移区30，在n型漂移区30内设有至少两个p型体区33，p型体区33和n 型漂移区30之间形成IGBT功率器件中寄生的体二极管结构。在p型体区33内设有p型体区接触区38和n型源区34，n型源区34和p型体区接触区38通过发射极金属接触层47接发射极电压。通常，p型体区接触区38的掺杂浓度要高于p型体区33的掺杂浓度的最大峰值，从而p型体区接触区38与发射极金属接触层47之间形成欧姆接触结构。IGBT功率器件还包括：位于器件的电流沟道之上的栅介质层35和栅极36。绝缘介质层50为层间绝缘介质层。
IGBT功率器件的导通和关断由栅极-发射极电压控制，当栅极-发射极电压大于MOS晶体管的阈值电压Vth时，MOS晶体管内部形成电流沟道并为双极型晶体管提供基极电流，使得IGBT功率器件导通。当栅极-发射极电压小于MOS晶体管的阈值电压Vth时，MOS晶体管内的电流沟道会被关断，双极型晶体管的基极电流被切断，从而IGBT功率器件被关断。IGBT功率器件在关断时，当集电极-发射极电压小于0V时，IGBT功率器件中寄生的体二极管处于正偏压状态，反向电流从发射极经体二极管流至集电极，此时体二极管的电流存在注入少子载流子现象，而这些少子载流子在IGBT功率器件再一次开启时进行反向恢复，导致IGBT功率器件有较大的反向恢复电流，反向恢复时间长。
发明内容
本公开提供一种具有快速反向恢复功能的IGBT功率器件，以解决相关技术的IGBT功率器件因少子载流子注入问题造成的反向恢复时间较长的问题。
一种IGBT功率器件，包括双极型晶体管、第一MOS晶体管、第二MOS晶体管、体二极管和体区接触二极管，所述体区接触二极管的阳极与所述体二极管的阳极连接；所述第一MOS晶体管的漏极与所述双极型晶体管的基极连接，所述第二MOS晶体管的漏极、体二极管的阴极和双极型晶体管的发射极之间相 连接并均接IGBT功率器件的集电极电压；所述第一MOS晶体管的第一栅极外接IGBT功率器件的栅极电压；所述双极型晶体管的集电极、第一MOS晶体管的源极、第二MOS晶体管的源极、第二MOS晶体管的第二栅极和体区接触二极管的阴极之间相连接并均接IGBT功率器件的发射极电压。
在一实施例中，所述双极型晶体管的集电极与所述体二极管的阳极连接。
在一实施例中，所述第一MOS晶体管的阈值电压大于所述第二MOS晶体管的阈值电压。
一种IGBT功率器件，包括双极型晶体管、第一MOS晶体管、第二MOS晶体管、体二极管和体区接触二极管，所述体区接触二极管的阳极、体二极管的阳极和双极型晶体管的集电极之间相连接；所述第一MOS晶体管的漏极与所述双极型晶体管的基极连接，所述第二MOS晶体管的漏极、体二极管的阴极和双极型晶体管的发射极之间相连接并均接IGBT功率器件的集电极电压；所述第一MOS晶体管的第一栅极外接IGBT功率器件的栅极电压；所述第一MOS晶体管的源极、第二MOS晶体管的源极、第二MOS晶体管的第二栅极和体区接触二极管的阴极之间相连接并均接IGBT功率器件的发射极电压。
在一实施例中，所述第一MOS晶体管的阈值电压大于所述第二MOS晶体管的阈值电压。
一种IGBT功率器件，包括：间隔设置的p型集电极区和n型集电极区，所述p型集电极区和所述n型集电极区均接集电极电压；位于所述p型集电极区和所述n型集电极区之上的n型场截止区，位于所述n型场截止区之上的n型漂移区，位于所述n型漂移区内的至少两个依次排列的p型体区，位于所述p型体区内的第一n型源区、第二n型源区和p型体区接触区；位于所述p型体区接触区之上的导电层，所述导电层与所述p型体区接触区形成体区接触二极 管结构，其中所述导电层为该体区接触二极管的阴极，所述p型体区接触区为该体区接触二极管的阳极；位于所述p型体区内且介于所述第一n型源区和所述n型漂移区之间的第一电流沟道，覆盖所述第一电流沟道的栅介质层和第一栅极，所述第一栅极外接栅极电压；位于所述p型体区内且介于所述第二n型源区和所述n型漂移区之间的第二电流沟道，覆盖所述第二电流沟道的栅介质层和第二栅极，所述第二栅极、第一n型源区、第二n型源区和导电层之间电性连接并均接发射极电压。
在一实施例中，所述导电层为位于所述p型体区之上的发射极金属接触层，所述p型体区接触区的掺杂浓度低于所述p型体区的掺杂浓度的最大峰值，所述p型体区接触区与所述发射极金属接触层形成肖特基势垒二极管结构。
在一实施例中，所述第二栅极、第一n型源区和第二n型源区均通过所述发射极金属接触层外接发射极电压。
在一实施例中，所述导电层为位于所述p型体区之上的n型多晶硅层，所述n型多晶硅层与所述p型体区接触区形成硅基的体区接触二极管结构。
在一实施例中，所述n型多晶硅层与所述第二栅极、第一n型源区和第二n型源区接触连接，所述n型多晶硅层通过发射极金属接触层外接发射极电压。
在一实施例中，所述n型多晶硅层与所述第一n型源区、第二n型源区接触连接，所述第二栅极和n型多晶硅层均通过发射极金属接触层外接发射极电压。
在一实施例中，所述导电层为位于所述p型体区内的n型掺杂区，所述n型掺杂区与所述p型体区接触区形成硅基的体区接触二极管结构。
在一实施例中，所述n型掺杂区、第二栅极、第一n型源区和第二n型源区均通过发射极金属接触层外接发射极电压。
在一实施例中，所述第一电流沟道的开启电压大于所述第二电流沟道的开启电压。
在一实施例中，所述IGBT功率器件还包括栅极沟槽，所述栅极沟槽位于相邻两个所述p型体区之间且凹陷在所述n型漂移区内，所述栅介质层、所述第一栅极和所述第二栅极均设于所述栅极沟槽内。
在一实施例中，所述IGBT功率器件还包括凹陷在所述n型漂移区中的屏蔽栅沟槽，所述屏蔽栅沟槽的开口位于所述栅极沟槽的底部，所述屏蔽栅沟槽内设有第三栅极，所述第三栅极通过绝缘介质层与所述n型漂移区、所述第一栅极、所述第二栅极隔离，所述第三栅极、第一n型源区、第二n型源区、第二栅极和导电层之间电性连接并均接发射极电压。
在一实施例中，所述第三栅极向上延伸至所述栅极沟槽内。
本公开提供的IGBT功率器件在关断时，当发射极-集电极电压大于0V时，体区接触二极管处于负偏压状态，因此能够大幅降低流经体二极管的反向电流，从而能够大幅减少体二极管内的少子载流子，进而能够减少IGBT功率器件的反向恢复电荷和反向恢复时间，使得IGBT功率器件能够实现快速的反向恢复功能；同时，当发射极-集电极电压达到第二MOS晶管的阈值电压(即第二栅极所控制的第二电流沟道的开启电压)时，第二MOS晶体管开启，此时反向电流会由发射极经第二电流沟道流至集电极。
附图说明
为了说明本公开示例性实施例的技术方案，下面对描述实施例中所需要用到的附图进行介绍。
图1是相关技术的一种IGBT功率器件的剖面结构示意图；
图2是一实施例提供的一种IGBT功率器件的等效电路示意图；
图3是一实施例提供的另一种IGBT功率器件的等效电路示意图；
图4是一实施例提供的另一种IGBT功率器件的等效电路示意图；
图5是一实施例提供的一种IGBT功率器件的剖面结构示意图；
图6是一实施例提供的另一种IGBT功率器件的剖面结构示意图；
图7是一实施例提供的另一种IGBT功率器件的剖面结构示意图；
图8是一实施例提供的另一种IGBT功率器件的剖面结构示意图。
图9是一实施例提供的另一种IGBT功率器件的剖面结构示意图。
具体实施方式
以下将结合本实施例中的附图，通过具体实施方式，描述本公开的技术方案。
本实施例所使用的诸如“具有”、“包含”以及“包括”等术语并不配出一个或多个其它元件或其组合的存在或添加。同时，为说明本公开的具体实施方式，说明书附图中所列示意图，放大了本公开所述的层和区域的厚度，且所列图形大小并不代表实际尺寸；说明书附图是示意性的。说明书中所列实施例不应仅限于说明书附图中所示区域的特定形状，而是包括所得到的形状如制备引起的偏差等。
IGBT功率器件包括元胞区和终端区，其中，元胞区用于获得低导通电阻，终端区用于提高元胞区中最边缘的元胞的耐压。终端区是IGBT功率器件中的通用结构，根据不同产品的要求有不同的设计结构，在本实施例中不再展示和描述IGBT功率器件的终端区的结构。本实施例中所述的IGBT功率器件指的是IGBT功率器件中元胞区的结构。
图2是本实施例提供的一种IGBT功率器件的等效电路示意图。如图2所示，本实施例提供的IGBT功率器件包括：双极型晶体管400(该实施例中为PNP型晶体管)、第一MOS晶体管501、第二MOS晶体管502、体二极管305和体区接触二极管304，体区接触二极管304的阳极与体二极管305的阳极连接。
第一MOS晶体管501的漏极与双极型晶体管400的基极连接，第二MOS晶体管502的漏极、体二极管305的阴极和双极型晶体管400的发射极之间相连接并均接IGBT功率器件的集电极302，从而第二MOS晶体管502的漏极、体二极管305的阴极和双极型晶体管400的发射极均接IGBT功率器件的集电极电压。
第一MOS晶体管501的第一栅极303a即为IGBT功率器件的栅极303a，从而第一MOS晶体管501的第一栅极303a接IGBT功率器件的栅极电压，第一MOS晶体管501的第一栅极303a通过IGBT功率器件的栅极电压来控制第一MOS晶体管501的开启和关断。
双极型晶体管400的集电极、第一MOS晶体管501的源极、第二MOS晶体管502的源极、第二MOS晶体管502的第二栅极303b和体区接触二极管304的阴极之间相连接并均接IGBT功率器件的发射极301，从而双极型晶体管400的集电极、第一MOS晶体管501的源极、第二MOS晶体管502的源极、第二MOS晶体管502的第二栅极303b和体区接触二极管304的阴极均接IGBT功率器件的发射极电压，第二MOS晶体管502的第二栅极303b通过IGBT功率器件的发射极电压来控制第二MOS晶体管502的开启和关断。
在一实施例中，第一MOS晶体管501的阈值电压大于第二MOS晶体管502的阈值电压。
图2所示的IGBT功率器件中，双极型晶体管400的集电极还可以同时与体 二极管305的阳极连接，其等效电路示意图如图3所示，本实施例中不再描述如图3所示的IGBT功率器件的等效电路示意图结构。
图4是本实施例提供的另一种IGBT功率器件的等效电路示意图。如图4所示，本实施例提供的IGBT功率器件包括：双极型晶体管400(该实施例中为PNP型晶体管)、第一MOS晶体管501、第二MOS晶体管502、体二极管305和体区接触二极管304，体区接触二极管304的阳极、体二极管305的阳极和双极型晶体管400的集电极之间相连接。
第一MOS晶体管501的漏极与双极型晶体管400的基极连接，第二MOS晶体管502的漏极、体二极管305的阴极和双极型晶体管400的发射极之间相连接并均接IGBT功率器件的集电极302，从而第二MOS晶体管502的漏极、体二极管305的阴极和双极型晶体管400的发射极均接IGBT功率器件的集电极电压。
第一MOS晶体管501的第一栅极303a即为IGBT功率器件的栅极303a，从而第一MOS晶体管501的第一栅极303a接IGBT功率器件的栅极电压，第一MOS晶体管501的第一栅极303a通过IGBT功率器件的栅极电压来控制第一MOS晶体管501的开启和关断。
第一MOS晶体管501的源极、第二MOS晶体管502的源极、第二MOS晶体管502的第二栅极303b和体区接触二极管304的阴极之间相连接并均接IGBT功率器件的发射极301，从而第一MOS晶体管501的源极、第二MOS晶体管502的源极、第二MOS晶体管502的第二栅极303b和体区接触二极管304的阴极均接IGBT功率器件的发射极电压，第二MOS晶体管502的第二栅极303b通过IGBT功率器件的发射极电压来控制第二MOS晶体管502的开启和关断。
图2至图4所示的IGBT功率器件的工作机理是：1)当IGBT功率器件的 栅极-发射极电压达到第一MOS晶体管501的阈值电压时，第一MOS晶体管501内部的第一电流沟道开启并为双极型晶体管400提供基极电流，使得IGBT功率器件导通；2)当IGBT功率器件的栅极-发射极电压小于第一MOS晶体管501的阈值电压时，第一MOS晶体管501内部的第一电流沟道会被关断，双极型晶体管400的基极电流被切断，从而IGBT功率器件被关断。
本实施例提供的IGBT功率器件在关断时：当发射极电压大于集电极电压时，体区接触二极管处于负偏压状态，因此能够大幅度降低流经体二极管的反向电流，从而能够大幅降低体二极管内的少子载流子，进而能够大幅降低IGBT功率器件的反向恢复电荷和反向恢复时间，使得IGBT功率器件能够实现快速的反向恢复功能；同时，当发射极-集电极电压达到第二MOS晶体管的阈值电压时，第二MOS晶体管内部的第二电流沟道开启，反向电流由发射极经第二MOS晶体管内部的第二电流沟道流至集电极。
图5是本实施例提供的一种IGBT功率器件的剖面结构示意图，如图5所示，本实施例的IGBT功率器件包括p型集电极区31和n型集电极区3，p型集电极区31和n型集电极区3均通过集电极金属接触层70接集电极电压；位于p型集电极区31和n型集电极区3之上的n型场截止区32，位于n型场截止区32之上的n型漂移区30，在n型漂移区30内形成的p型体区33，p型体区33的数量可依据实际产品的要求来设定，在本实施例中仅示例性的示出了两个p型体区33的结构。p型体区33内设有p型体区接触区38、第一n型源区34a和第二n型源区34b，p型体区接触区38通常设置于第一n型源区34a和第二n型源区34b之间。
p型体区33与n型漂移区30之间形成IGBT功率器件中寄生的体二极管结构，其中p型体区33为该体二极管的阳极，n型漂移区30为该体二极管的阴极。
本实施例提供的IGBT功率器件还包括位于p型体区33内且介于第一n型源区34a和n型漂移区30之间的第一电流沟道，覆盖该第一电流沟道的栅介质层35和第一栅极36a，第一栅极36a外接栅极电压并通过栅极电压来控制该第一电流沟道的开启和关断。
本实施例提供的IGBT功率器件还包括位于p型体区33内且介于第二n型源区34b和n型漂移区30之间的第二电流沟道，覆盖该第二电流沟道的栅介质层35和第二栅极36b。
在一实施例中，第一电流沟道的开启电压要大于第二电流沟道的开启电压，同时，电流沟道是MOS晶体管结构中当施加栅极电压时在半导体表面形成的积累层及反型层，在本实施例附图中，IGBT功率器件中的第一电流沟道和第二电流沟道均未示出。
本实施例提供的IGBT功率器件还包括位于p型体区接触区38之上的导电层37，导电层37与p型体区接触区38形成体区接触二极管结构，其中导电层37为该体区接触二极管的阴极，p型体区接触区38为该体区接触二极管的阳极，从而，体区接触二极管的阳极与体二极管的阳极连接。在一实施例中，导电层37可以为位于p型体区33之上的n型多晶硅层或金属层，从而体区接触二极管可以是硅基的体区接触二极管结构，也可以是肖特基势垒二极管结构。
第二栅极36b、第一n型源区34a、第二n型源区34b与导电层37之间电性连接并均接发射极电压，由此，体区接触二极管的阴极与发射极连接，且第二栅极36b通过发射极电压来控制第二电流沟道的开启和关断。
在图5所示的IGBT功率器件的实施例中，导电层37与第一n型源区34a、第二n型源区34b直接接触连接，因此需要再将导电层37与第二栅极36b电性连接。
图6是本实施例提供的另一种IGBT功率器件的剖面结构示意图，图6对应的是本公开提供的一种IGBT功率器件在图5所示的IGBT功率器件的实施例的基础上，体区接触二极管采用肖特基势垒二极管结构的一个实施例。如图6所示，在p型体区33之上形成有发射极金属接触层47，发射极金属接触层47即为位于p型体区接触区38之上的导电层，此时，p型体区接触区38的掺杂浓度需要低于p型体区33的掺杂浓度的最大峰值，由此p型体区接触区38和发射极金属接触层47形成肖特基势垒二极管结构，其中，发射极金属接触层47为该肖特基势垒二极管的阴极，p型体区接触区38为该肖特基势垒二极管的阳极。发射极金属接触层47与第二栅极36b、第一n型源区34a、第二n型源区34b直接连接，发射极金属接触层47外接发射极电压，由此第二栅极36b通过发射极电压来控制第二电流沟道的开启和关断。第一栅极36a通过栅极金属接触层(基于剖面结构的位置关系，栅极金属接触层结构在图6中未示出)外接栅极电压，由此第一栅极36a通过栅极电压来控制第一电流沟道的开启和关断。发射极金属接触层47与栅极金属接触层之间由层间绝缘层50隔离，层间绝缘层50通常为硅玻璃、硼磷硅玻璃或磷硅玻璃等材料。
图6所示的IGBT功率器件，当发射极金属接触层47与p型体区接触区38形成的肖特基势垒二极管结构的接触势垒极低时，肖特基势垒二极管结构可等效为欧姆接触结构，在IGBT功率器件关断时，能够在一定程度上降低流经体二极管的反向电流，从而能够减少体二极管内的少子载流子，进而能够减少IGBT功率器件的反向恢复电荷和反向恢复时间，使得IGBT功率器件能够实现快速的反向恢复功能，此时的IGBT功率器件的反向恢复速度慢于采用高接触势垒的体区接触二极管时的反向恢复速度，但快于没有体区接触二极管结构的传统IGBT功率器件的反向恢复速度。
图7是本实施例提供的另一种IGBT功率器件的剖面结构示意图，图7对应的是本公开提供的一种IGBT功率器件在图5所示IGBT功率器件的实施例的基础上，体区接触二极管采用硅基的体区接触二极管的一个实施例。如图7所示，在p型体区33之上形成有n型多晶硅层57，n型多晶硅层57即为位于p型体区接触区38之上的导电层，由此p型体区接触区38和n型多晶硅层57形成硅基的体区接触二极管结构，其中，n型多晶硅层57为该体区接触二极管的阴极，p型体区接触区38为该体区接触二极管的阳极。n型多晶硅层57可以与第二栅极36b、第一n型源区34a、第二n型源区34b直接接触连接，然后n型多晶硅层57通过发射极金属接触层47外接发射极电压，如图7所示。n型多晶硅层57也可以与第一n型源区34a、第二n型源区34b直接接触连接，然后第二栅极36b与n型多晶硅层57均通过发射极金属接触层47外接发射极电压。在该实施例中，n型多晶硅层57与第二栅极36b、第一n型源区34a、第二n型源区34b直接接触连接，然后n型多晶硅层57通过发射极金属接触层47外接发射极电压，由此第二栅极36b通过发射极电压来控制第二电流沟道的开启和关断。第一栅极36a通过栅极金属接触层(基于剖面的位置关系，栅极金属接触层结构在图7中未示出)外接栅极电压，由此第一栅极36a通过栅极电压来控制第一电流沟道的开启和关断。发射极金属接触层47与栅极金属接触层之间由层间绝缘层50隔离。
图8是本实施例提供的另一种IGBT功率器件的剖面结构示意图，图8对应的是本公开提供的一种IGBT功率器件的体区接触二极管结构采用硅基的体区接触二极管的另一个实施例。如图8所示，本实施例的IGBT功率器件包括p型集电极区31和n型集电极区3，p型集电极区31和n型集电极区3均通过集电极金属接触层70接集电极电压。本实施例提供的IGBT功率器件还包括位于 p型集电极区31和n型集电极区3之上的n型场截止区32，位于n型场截止区32之上的n型漂移区30，在n型漂移区30内形成有p型体区33，p型体区33内设有p型体区接触区38、n型掺杂区39、第一n型源区34a和第二n型源区34b，p型体区接触区38和n型掺杂区39均位于第一n型源区34a和第二n型源区34b之间，n型掺杂区39位于p型体区接触区38之上，n型掺杂区39即为位于p型体区接触区38之上的导电层。由此，n型掺杂区39与p型体区接触区39形成硅基的体区接触二极管结构，其中，n型掺杂区39为该体区接触二极管的阴极，p型体区接触区38为该体区接触二极管的阳极。
p型体区33与n型漂移区30之间形成IGBT功率器件中寄生的体二极管结构，其中p型体区33为该体二极管的阳极，n型漂移区30为该体二极管的阴极，从而，体区接触二极管的阳极与体二极管的阳极连接。
本实施例提供的IGBT功率器件还包括位于p型体区33内且介于第一n型源区34a和n型漂移区30之间的第一电流沟道，覆盖该第一电流沟道的栅介质层35和第一栅极36a，第一栅极36a通过栅极电压来控制第一电流沟道的开启和关断。
本实施例提供的IGBT功率器件还包括位于p型体区33内且介于第二n型源区34b和n型漂移区之间的第二电流沟道，覆盖该第二电流沟道的栅介质层35和第二栅极36b。
第二栅极36b、第一n型源区34a、第二n型源区34b与n型掺杂区39之间由发射极金属接触层47连接，发射极金属接触层47外接发射极电压，由此第二栅极36b通过发射极电压来控制第二电流沟道的开启和关断。第一栅极36a通过栅极金属接触层(基于剖面的位置关系，栅极金属接触层结构在图8中未示出)外接栅极电压，由此第一栅极36a通过栅极电压来控制第一电流沟道的 开启和关断。发射极金属接触层47与栅极金属接触层之间由层间绝缘层50隔离，层间绝缘层50通常为硅玻璃、硼磷硅玻璃或磷硅玻璃等材料。
图9是本实施例提供的另一种IGBT功率器件的剖面结构示意图，如图9所示，本实施例的IGBT功率器件包括：p型集电极区20a和n型集电极区20b，p型集电极区20a和n型集电极区20b均通过集电极金属接触层70外接集电极电压。
本实施例提供的IGBT功率器件还包括位于p型集电极区20a和n型集电极区20b之上的n型场截止区21，以及位于n型场截止区21之上的n型漂移区22。
本实施例提供的IGBT功率器件还包括位于n型漂移区22内的至少两个依次排列的p型体区27，图9中仅示例性的示出了6个p型体区27结构，p型体区27内设有p型体区接触区29、第一n型源区28和第二n型源区98，通常p型体区接触区29设于第一n型源区28和第二n型源区98之间。
p型体区27与n型漂移区22之间形成IGBT功率器件中寄生的体二极管结构，其中p型体区27为该体二极管的阳极，n型漂移区22为该体二极管的阴极。
本实施例提供的IGBT功率器件还包括凹陷在n型漂移区22内且介于相邻的p型体区27之间的栅极沟槽，以及凹陷在n型漂移区22内的屏蔽栅沟槽，其中屏蔽栅沟槽的开口位于栅极沟槽的底部。屏蔽栅沟槽的开口宽度可以与栅极沟槽的开口宽度相同，也可以大于或者小于栅极沟槽的开口宽度，
p型体区27的深度可以与n型漂移区22中的所述栅极沟槽的深度相同，也可以大于或者小于栅极沟槽的深度，图9中仅以p型体区27的深度小于所述栅极沟槽的深度为例。
本实施例提供的IGBT功率器件还包括位于p型体区接触区29之上的导电 层99，导电层99与p型体区接触区29形成体区接触二极管结构，其中导电层99为该体区接触二极管的阴极，p型体区接触区29为该体区接触二极管的阳极。由此，体区接触二极管的阳极与体二极管的阳极连接。导电层99可以为n型多晶硅层或者金属层，由此体区接触二极管结构可以为肖特基势垒二极管结构也可以是硅基的体区接触二极管结构。
本实施例提供的IGBT功率器件还包括位于p型体区27内且介于第一n型源区28和n型漂移区22之间的第一电流沟道；位于所述栅极沟槽内且覆盖所述栅极沟槽的靠近第一n型源区28一侧的侧壁表面的栅介质层23和第一栅极24a，第一栅极24a外接栅极电压，第一栅极24a通过栅极电压来控制第一n型源区28和n型漂移区22之间的第一电流沟道的开启和关断。
本实施例提供的IGBT功率器件还包括位于p型体区27内且介于第二n型源区98和n型漂移区22之间的第二电流沟道；位于所述栅极沟槽内且覆盖所述栅极沟槽的靠近第二n型源区98一侧的侧壁表面的栅介质层23和第二栅极24b。
本实施例提供的IGBT功率器件还包括位于所述屏蔽栅沟槽内的第三栅极26，第三栅极26通过场氧化层25与n型漂移区22、第一栅极24a、第二栅极24b隔离。在一实施例中，所述屏蔽栅沟槽内的第三栅极26向上延伸至所述栅极沟槽内，在所述栅极沟槽区域内，第三栅极26直接通过场氧化层25与第一栅极24a、第二栅极24b隔离。
第一n型源区28、第二n型源区98、第二栅极24b、第三栅极26和导电层99之间电性连接并均接发射极电压，由此第二栅极24b通过发射极电压来控制第二n型源区98与n型漂移区22之间的第二电流沟道的开启和关断，第三栅极26为屏蔽栅极，第三栅极26通过发射极电压在n型漂移区22内形成横向电 场，起到降低导通电阻和提高耐压的作用。
在一实施例中，第一栅极24a所控制的第一电流沟道的开启电压大于第二栅极24b所控制的第二电流沟道的开启电压。同时，IGBT功率器件中的电流沟道是当对栅极施加电压时在p型体区内形成的积累层及反型层，在本实施例附图中，IGBT功率器件中的第一栅极24a控制的第一电流沟道和第二栅极24b控制的第二电流沟道均未示出。
图9中，导电层99与第一n型源区28、第二n型源区98直接接触连接，因此需要将导电层99与第二栅极24b和第三栅极26电性连接。

Claims (12)

  1. 一种绝缘栅双极型晶体管IGBT功率器件，包括双极型晶体管、第一金属氧化物半导体MOS晶体管、第二MOS晶体管、体二极管和体区接触二极管，所述体区接触二极管的阳极与所述体二极管的阳极连接；
    所述第一MOS晶体管的漏极与所述双极型晶体管的基极连接，所述第二MOS晶体管的漏极、所述体二极管的阴极和所述双极型晶体管的发射极之间相连接并均接所述IGBT功率器件的集电极电压；
    所述第一MOS晶体管的第一栅极外接所述IGBT功率器件的栅极电压；
    所述双极型晶体管的集电极、所述第一MOS晶体管的源极、所述第二MOS晶体管的源极、所述第二MOS晶体管的第二栅极和所述体区接触二极管的阴极之间相连接并均接所述IGBT功率器件的发射极电压。
  2. 如权利要求1所述的IGBT功率器件，其中，所述双极型晶体管的集电极还与所述体二极管的阳极连接。
  3. 如权利要求1所述的IGBT功率器件，其中，所述第一MOS晶体管的阈值电压大于所述第二MOS晶体管的阈值电压。
  4. 一种绝缘栅双极型晶体管IGBT功率器件，包括：
    间隔设置的p型集电极区和n型集电极区，所述p型集电极区和所述n型集电极区均接集电极电压：
    位于所述p型集电极区和所述n型集电极区之上的n型场截止区，位于所述n型场截止区之上的n型漂移区，位于所述n型漂移区内的至少两个依次排列的p型体区，位于所述p型体区内的第一n型源区、第二n型源区和p型体区接触区：
    位于所述p型体区接触区之上的导电层，所述导电层与所述p型体区接触区形成体区接触二极管结构，其中所述导电层为该体区接触二极管的阴极，所 述p型体区接触区为该体区接触二极管的阳极；
    位于所述p型体区内且介于所述第一n型源区和所述n型漂移区之间的第一电流沟道，覆盖所述第一电流沟道的栅介质层和第一栅极，所述第一栅极外接栅极电压：
    位于所述p型体区内且介于所述第二n型源区和所述n型漂移区之间的第二电流沟道，覆盖所述第二电流沟道的栅介质层和第二栅极，所述第二栅极、第一n型源区、第二n型源区和导电层之间电性连接并均接发射极电压。
  5. 如权利要求4所述的IGBT功率器件，其中，所述导电层为位于所述p型体区之上的发射极金属接触层，所述p型体区接触区的掺杂浓度低于所述p型体区的掺杂浓度的最大峰值，所述p型体区接触区与所述发射极金属接触层形成肖特基势垒二极管结构。
  6. 如权利要求5所述的IGBT功率器件，其中，所述第二栅极、所述第一n型源区和所述第二n型源区均通过所述发射极金属接触层外接发射极电压。
  7. 如权利要求4所述的IGBT功率器件，其中，所述导电层为位于所述p型体区内的n型掺杂区，所述n型掺杂区与所述p型体区接触区形成硅基的体区接触二极管结构。
  8. 如权利要求7所述的IGBT功率器件，其中，所述n型掺杂区、所述第二栅极、所述第一n型源区和所述第二n型源区均通过所述发射极金属接触层外接发射极电压。
  9. 如权利要求4所述的IGBT功率器件，其中，所述第一电流沟道的开启电压大于所述第二电流沟道的开启电压。
  10. 如权利要求4所述的IGBT功率器件，还包括栅极沟槽，所述栅极沟槽位于相邻两个所述p型体区之间且凹陷在所述n型漂移区内，所述栅介质层、 所述第一栅极和所述第二栅极均设于所述栅极沟槽内。
  11. 如权利要求10所述的IGBT功率器件，还包括凹陷在所述n型漂移区中的屏蔽栅沟槽，所述屏蔽栅沟槽的开口位于所述栅极沟槽的底部，所述屏蔽栅沟槽内设有第三栅极，所述第三栅极通过绝缘介质层与所述n型漂移区、所述第一栅极、所述第二栅极隔离，所述第三栅极、所述第一n型源区、所述第二n型源区、所述第二栅极和所述导电层之间电性连接并均接发射极电压。
  12. 如权利要求11所述的IGBT功率器件，其中，所述第三栅极向上延伸至所述栅极沟槽内。
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