WO2019073797A1 - 成膜方法 - Google Patents

成膜方法 Download PDF

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Publication number
WO2019073797A1
WO2019073797A1 PCT/JP2018/035652 JP2018035652W WO2019073797A1 WO 2019073797 A1 WO2019073797 A1 WO 2019073797A1 JP 2018035652 W JP2018035652 W JP 2018035652W WO 2019073797 A1 WO2019073797 A1 WO 2019073797A1
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WO
WIPO (PCT)
Prior art keywords
high frequency
gas
film
film forming
power
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Application number
PCT/JP2018/035652
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English (en)
French (fr)
Japanese (ja)
Inventor
伸也 岩下
剛 守屋
Original Assignee
東京エレクトロン株式会社
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Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to KR1020207012315A priority Critical patent/KR102390523B1/ko
Priority to CN201880064563.3A priority patent/CN111164235B/zh
Publication of WO2019073797A1 publication Critical patent/WO2019073797A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • Embodiments of the present disclosure relate to a film forming method.
  • a deposition process is performed to form a film on a substrate.
  • a film is formed by the reaction of a precursor and a reactive gas.
  • plasma of reactive gas is used to enhance the reaction.
  • the film formation process is required to control the stress of the film.
  • the film formation process capable of controlling the stress of the film is described in Patent Documents 1 to 3.
  • a capacitive coupling type plasma processing apparatus is used.
  • the capacitively coupled plasma processing apparatus has parallel plate electrodes, that is, upper and lower electrodes.
  • the high frequency power supplied to the lower electrode is adjusted with respect to the high frequency power supplied to the upper electrode.
  • the film forming process described in Patent Documents 1 to 3 controls the stress of a film to be formed by adjusting the power of high frequency.
  • the stress of the film is an important factor related to the film quality, but in addition to the stress of the film, setting the film density, ie, forming a film having a high film density or a film having a low film density It is required to form.
  • a deposition method performed using a plasma processing apparatus includes a chamber body, a gas supply unit, a support, an upper electrode, a high frequency supply unit, and a phase adjustment circuit.
  • An internal space is provided in the chamber body.
  • the gas supply unit is configured to supply the gas to the internal space.
  • the support includes a lower electrode.
  • the support is provided in the interior space and is configured to support a substrate mounted thereon.
  • the upper electrode is provided above the support.
  • the high frequency supply unit generates a first high frequency supplied to the upper electrode and a second high frequency having the same frequency as the first high frequency and supplied to the lower electrode, and the first high frequency The ratio of the power of the second high frequency to the power is adjustable.
  • the phase adjustment circuit is configured to adjust the phase of the voltage of the lower electrode relative to the phase of the voltage of the upper electrode.
  • the film forming method according to the first aspect is performed in a state where the substrate is placed on the support table.
  • This film forming method includes the steps of: supplying a precursor gas containing a precursor from the gas supply unit to the inner space; supplying a reactive gas from the gas supply unit to the inner space; and a precursor and a reactive gas Generating a plasma of reactive gas to enhance the reaction with the reaction.
  • the ratio of the power of the second high frequency power to the power of the first high frequency power is adjusted, and the self bias potential of the lower electrode is zero or has a positive value.
  • the phase adjustment circuit adjusts the phase of the voltage of the lower electrode relative to the phase of the voltage of the upper electrode.
  • the phase adjustment circuit adjusts the phase of the voltage of the lower electrode relative to the phase of the voltage of the upper electrode such that the self-bias potential of the lower electrode is zero or has a positive value.
  • the self bias potential of the lower electrode is zero or has a positive value, the energy of ions colliding with the substrate is reduced. Therefore, the film density of the film formed on the substrate is increased.
  • a film forming method performed using a plasma processing apparatus includes a chamber body, a gas supply unit, a support, an upper electrode, a high frequency supply unit, and a phase adjustment circuit.
  • An internal space is provided in the chamber body.
  • the gas supply unit is configured to supply the gas to the internal space.
  • the support includes a lower electrode.
  • the support is provided in the interior space and is configured to support a substrate mounted thereon.
  • the upper electrode is provided above the support.
  • the high frequency supply unit generates a first high frequency supplied to the upper electrode and a second high frequency having the same frequency as the first high frequency and supplied to the lower electrode, and the first high frequency The ratio of the power of the second high frequency to the power is adjustable.
  • the phase adjustment circuit is configured to adjust the phase of the voltage of the lower electrode relative to the phase of the voltage of the upper electrode.
  • the film forming method according to the second aspect is performed in a state where the substrate is placed on the support table.
  • This film forming method includes the steps of: supplying a precursor gas containing a precursor from the gas supply unit to the inner space; supplying a reactive gas from the gas supply unit to the inner space; and a precursor and a reactive gas Generating a plasma of reactive gas to enhance the reaction with the reaction.
  • the ratio of the power of the second high frequency to the power of the first high frequency is adjusted, and the lower part of the phase adjustment circuit is made so that the self bias potential of the lower electrode has a negative value.
  • the phase of the voltage of the electrode is adjusted relative to the phase of the voltage of the upper electrode.
  • the phase adjustment circuit adjusts the phase of the voltage of the lower electrode relative to the phase of the voltage of the upper electrode such that the self bias potential of the lower electrode has a negative value.
  • the self bias potential of the lower electrode has a negative value, the energy of ions colliding with the substrate is high. Therefore, the film density of the film formed on the substrate is lowered.
  • the high frequency supply comprises a high frequency power supply and a transformer.
  • the transformer has a primary coil, a first secondary coil, and a second secondary coil.
  • the primary coil is electrically connected to the high frequency power supply.
  • the first secondary coil is electromagnetically coupled to the primary coil and electrically connected to the upper electrode.
  • the second secondary coil is electromagnetically coupled to the primary coil and electrically connected to the lower electrode.
  • the transformer is configured to be able to adjust the ratio of the power of the second high frequency power output from the second secondary coil to the power of the first high frequency power output from the first secondary coil .
  • the transformer adjusts the ratio of the second high frequency power to the first high frequency power.
  • the steps of providing a precursor gas, providing a reactive gas, and generating a plasma of the reactive gas are performed simultaneously.
  • the film is formed by plasma-enhanced chemical vapor deposition (CVD).
  • the step of supplying the precursor gas and the step of generating a plasma of the reactive gas are alternately performed.
  • the film is formed by plasma enhanced atomic layer deposition (ALD).
  • the precursor gas is a titanium containing gas and the reactive gas is an oxygen containing gas.
  • the titanium-containing gas is a titanium halide gas.
  • the titanium halide gas is titanium tetrachloride gas.
  • the oxygen containing gas is oxygen gas.
  • a film forming method performed using a plasma processing apparatus includes a chamber body, a gas supply unit, a support, an upper electrode, a high frequency supply unit, and a phase adjustment circuit.
  • An internal space is provided in the chamber body.
  • the gas supply unit is configured to supply the gas to the internal space.
  • the support includes a lower electrode.
  • the support is provided in the interior space and is configured to support a substrate mounted thereon.
  • the upper electrode is provided above the support.
  • the high frequency supply unit generates a first high frequency supplied to the upper electrode and a second high frequency having the same frequency as the first high frequency and supplied to the lower electrode, and the first high frequency The ratio of the power of the second high frequency to the power is adjustable.
  • the phase adjustment circuit is configured to adjust the phase of the voltage of the lower electrode relative to the phase of the voltage of the upper electrode.
  • the film forming method comprises the steps of: (i) performing a film forming process under initial conditions in order to form a first film on a first substrate placed on a support table
  • the film forming process includes (a) supplying a precursor gas containing a precursor from the gas supply unit to the inner space, and (b) supplying a reactive gas from the gas supply unit to the inner space And (c) generating a plasma of the reactive gas to enhance the reaction between the precursor and the reactive gas, wherein the initial condition is a process of generating the plasma of the reactive gas, And (ii) an initial value of an initial value of the ratio of the power of the second high frequency power to the power of the first high frequency power and an initial value of the phase difference of the voltage of the lower electrode to the voltage of the upper electrode; Evaluating the at least one film, wherein an evaluation result including at least a stress of the first film is generated.
  • the processing conditions include the ratio of the power of the second high frequency to the power of the first high frequency and the phase difference of the voltage of the lower electrode to the voltage of the upper electrode in the step of generating the plasma of the reactive gas. In the process of determining the processing conditions, the ratio in the processing conditions is set based on the evaluation result.
  • the film density of the film to be formed can be set by setting the phase difference of the voltage of the lower electrode to the voltage of the upper electrode. Further, based on the stress of the first film formed by the film forming process under the initial conditions, the ratio of the power of the second high frequency to the power of the first high frequency at the time of forming the second film is adjusted. Therefore, it is possible to bring the stress of the second film close to the desired stress.
  • the polarity of the self-bias potential of the lower electrode when the film formation process is performed under the processing conditions is the polarity of the self-bias potential of the lower electrode when the film formation process is performed under the initial conditions. It is the same.
  • the ratio included in the processing conditions is increased. Included in the processing conditions for the initial value of the ratio included in the initial conditions to reduce the tensile stress of the second film relative to the stress of the first film or to increase the compressive stress of the second film Ratio is reduced.
  • the film density can be set in addition to the stress of the film.
  • FIG. 3 is a partially broken perspective view showing a transformer that can be used as a transformer of the plasma processing apparatus shown in FIG. 2;
  • Fig. 4 schematically illustrates the three coils of the transformer shown in Fig. 3;
  • (A) of FIG. 5 is a diagram showing the time change of the voltage of the upper electrode and the voltage of the lower electrode when the phase difference ⁇ is substantially zero, and (b) of FIG.
  • FIG. 5 shows that the phase difference ⁇ is substantially zero It is a figure which shows the time change of the electric potential of plasma in the case of being, and the electric potential of a board
  • (A) of FIG. 6 is a diagram showing temporal changes of the voltage of the upper electrode and the voltage of the lower electrode when the phase difference ⁇ is not zero, and (b) of FIG. 6 is a case when the phase difference ⁇ is not zero It is a figure which shows the time change of the electric potential of plasma, and the electric potential of a board
  • FIG. 3 schematically shows another transformer that can be used as a transformer of the plasma processing apparatus shown in FIG. 2; It is a timing chart relevant to the film-forming method shown in FIG. FIG.
  • FIG. 9 is a flowchart showing a film forming method according to another embodiment. It is a flowchart which shows the film-forming method which concerns on another embodiment. It is a graph which shows the result of the 1st experiment. It is a graph which shows the result of the 2nd experiment. It is a graph which shows the result of the 3rd experiment.
  • FIG. 1 is a flow chart showing a film forming method according to an embodiment.
  • the film forming method shown in FIG. 1 (hereinafter referred to as “method MT1”) is a method of forming a film on a substrate.
  • a plasma processing apparatus is used.
  • FIG. 2 is a view showing a plasma processing apparatus according to an embodiment that can be used to execute a film forming method according to various embodiments.
  • the plasma processing apparatus 10 shown in FIG. 2 is a capacitively coupled plasma processing apparatus.
  • the plasma processing apparatus 10 includes a chamber body 12.
  • the chamber body 12 has a substantially cylindrical shape and extends in the vertical direction.
  • the chamber body 12 has a substantially cylindrical side wall portion and a bottom portion continuous with the lower end of the side wall portion.
  • the chamber body 12 provides an internal space 12s.
  • the chamber body 12 is formed of a metal such as aluminum.
  • a coating having plasma resistance is formed on the inner wall surface of the chamber body 12.
  • the coating having plasma resistance may be a ceramic film such as an alumite film or a yttrium oxide film.
  • the chamber body 12 is grounded.
  • a passage 12 p is formed in the side wall of the chamber body 12.
  • the substrate W passes through the passage 12 p when being transferred from the outside of the chamber body 12 to the internal space 12 s and when being transferred from the inside space 12 s to the outside of the chamber body 12.
  • the passage 12p can be opened and closed by a gate valve 12g.
  • the gate valve 12 g is provided along the side wall of the chamber body 12.
  • a support 14 is provided in the internal space 12s of the chamber body.
  • the support 14 is configured to support a substrate W placed thereon.
  • the support 14 is supported by a support 15.
  • the support 15 is insulative and extends upward from the bottom of the chamber body 12.
  • the support 14 includes a lower electrode 16.
  • the lower electrode 16 has a substantially disk shape.
  • the lower electrode 16 is formed of a conductive material such as aluminum.
  • the support 14 further includes an electrostatic chuck 18.
  • the electrostatic chuck 18 is provided on the lower electrode 16.
  • the substrate W is placed on the electrostatic chuck 18.
  • the electrostatic chuck 18 includes a dielectric film and an electrode embedded in the dielectric film.
  • the electrode of the electrostatic chuck 18 may be a film having conductivity.
  • a power supply is connected to the electrode of the electrostatic chuck 18 via a switch. By applying a voltage from the power source to the electrode of the electrostatic chuck 18, electrostatic attraction is generated between the electrostatic chuck 18 and the substrate W.
  • the substrate W is attracted to the electrostatic chuck 18 and held by the electrostatic chuck 18 by the generated electrostatic attractive force.
  • An upper electrode 20 is provided above the support 14. A portion of the internal space 12s is interposed between the upper electrode 20 and the support 14. In one embodiment, the upper end of the chamber body 12 is open. The upper electrode 20 is supported at the upper end of the chamber body 12 via a member 21. The member 21 has an insulating property. The upper electrode 20, together with the member 21, closes the opening at the upper end of the chamber body 12.
  • the upper electrode 20 is formed of one or more parts having conductivity.
  • One or more components that constitute the upper electrode 20 may be formed of a material such as aluminum or silicon.
  • the upper electrode 20 may be formed of one or more parts having conductivity and one or more parts having insulation.
  • a plasma resistant film may be formed on the surface of the upper electrode 20.
  • a plurality of gas discharge holes 20a and gas diffusion chambers 20b are formed in the upper electrode 20, a plurality of gas discharge holes 20a and gas diffusion chambers 20b are formed.
  • the plurality of gas discharge holes 20a extend downward from the gas diffusion space 20b to the lower surface of the upper electrode 20 on the inner space 12s side.
  • a gas supply unit 22 is connected to the gas diffusion space 20b.
  • the gas supply unit 22 is configured to supply a gas to the internal space 12s.
  • the gas supply unit 22 includes, for example, a plurality of gas sources, a plurality of flow rate controllers such as mass flow controllers, and a plurality of valves.
  • Each of the plurality of gas sources is connected to the gas diffusion space 20b via the corresponding flow rate controller among the plurality of flow rate controllers and the corresponding valve among the plurality of valves.
  • the gas supply unit 22 adjusts the flow rate of the gas from the selected gas source among the plurality of gas sources, and supplies the gas to the gas diffusion space 20b.
  • the gas supplied to the gas diffusion space 20b is supplied to the internal space 12s from the plurality of gas discharge holes 20a.
  • An exhaust device 24 is connected to the bottom of the chamber body 12.
  • the exhaust device 24 is provided in communication with the internal space 12s.
  • the exhaust device 24 has a pressure control device such as a pressure control valve, and a vacuum pump such as a turbo molecular pump or a dry pump.
  • a pressure control device such as a pressure control valve
  • a vacuum pump such as a turbo molecular pump or a dry pump.
  • the plasma processing apparatus 10 further includes a high frequency supply unit 26, a phase adjustment circuit 281, a phase adjustment circuit 282, and a control unit 30.
  • the high frequency supply unit 26 generates a first high frequency and a second high frequency.
  • the first high frequency is a high frequency supplied to the upper electrode 20.
  • the second high frequency is a high frequency supplied to the lower electrode 16 and has the same frequency as the first high frequency.
  • the high frequency supply unit 26 is configured to be able to adjust the ratio R (i.e., P2 / P1) of the power of the second high frequency to the power of the first high frequency.
  • P1 is the power of the first high frequency
  • P2 is the power of the second high frequency.
  • the control unit 30 may be a computer device, and may include a processor, a storage device such as a memory, an input device such as a keyboard, a mouse, and a touch panel, a display device, an input / output interface of signals, and the like.
  • the storage device of the control unit 30 stores a control program and recipe data.
  • the processor of the control unit 30 executes a control program to control each unit of the plasma processing apparatus 10 according to the recipe data.
  • the method MT ⁇ b> 1 and the film forming method according to various embodiments described later are executed by the control unit 30 controlling each part of the plasma processing apparatus 10.
  • the high frequency supply unit 26 includes a high frequency power supply 261 and a transformer 100.
  • the high frequency power supply 261 is configured to generate a high frequency.
  • the high frequency power from the high frequency power supply 261 is supplied to the primary coil of the transformer 100.
  • FIG. 3 is a partially cutaway perspective view showing a transformer that can be used as a transformer of the plasma processing apparatus shown in FIG.
  • FIG. 4 schematically illustrates the three coils of the transformer shown in FIG.
  • the transformer 100A shown in FIGS. 3 and 4 can be used as the transformer 100 of the plasma processing apparatus 10.
  • the transformer 100A includes a rotating shaft 112, a primary coil 101A, a first secondary coil 102A, and a second secondary coil 103A.
  • the first secondary coil 102 ⁇ / b> A and the second secondary coil 103 ⁇ / b> A constitute a secondary coil pair 106.
  • transformer 100A includes support member 122, support member 124, support column 126, support member 128, support member 130, support member 132, support member 134, terminal 101a, terminal 101b, terminal 102a, terminal 102b, terminal It further comprises a terminal 103a and a terminal 103b.
  • the rotating shaft 112 has a substantially cylindrical shape.
  • the rotation axis 112 is rotatably provided about its central axis RX.
  • the rotation shaft 112 is rotatably supported by the support member 122 and the support member 124.
  • the support member 122 and the support member 124 are plate-like members, and have a substantially rectangular planar shape.
  • the support member 122 and the support member 124 are formed of an insulator.
  • the support member 122 and the support member 124 are provided so as to intersect or be substantially orthogonal to the central axis RX, and are arranged along the direction RD such that the thickness direction thereof substantially coincides with the direction RD in which the central axis RX extends. It is done.
  • One end of a support 126 is fixed to the corner of the support member 122, and the other end of the support 126 is fixed to the corner of the support member 124.
  • One end of the rotation shaft 112 penetrates the support member 122 and protrudes from the support member 122.
  • One end of the rotating shaft 112 is connected to a drive mechanism (for example, a motor).
  • the support member 128 and the support member 130 are substantially disk-shaped members, and are formed of an insulator.
  • the support member 128 and the support member 130 are provided so as to intersect or be substantially orthogonal to the central axis RX between the support member 122 and the support member 124 so that the plate thickness direction thereof substantially coincides with the direction RD. It is arranged along the direction RD.
  • the support member 132 and the support member 134 are substantially disk-shaped members, and are formed of an insulator.
  • the support member 132 and the support member 134 are provided so as to intersect or be substantially orthogonal to the central axis RX between the support member 128 and the support member 130 so that the plate thickness direction thereof substantially coincides with the direction RD. It is arranged along the direction RD.
  • the rotation shaft 112 passes through the centers of the support member 128, the support member 130, the support member 132, and the support member 134.
  • the support member 128, the support member 130, the support member 132, and the support member 134
  • the primary coil 101A extends around a first axis AX1 orthogonal to the central axis RX.
  • the first axis AX1 is orthogonal to the central axis RX at a midpoint between the support member 122 and the support member 124.
  • the primary coil 101A is wound around the first axis AX1 so as to alternately pass through the outside of the support member 122 and the outside of the support member 124.
  • the terminal 101a is provided on one surface 122a of the support member 122 (a surface facing the outside of the transformer 100A).
  • the other end of the primary coil 101A is connected to the terminal 101b.
  • the terminal 101b is provided on one surface 124a of the support member 124 (the surface facing the outside of the transformer 100A).
  • the first secondary coil 102A extends around a second axis AX2.
  • the second axis AX2 is orthogonal to the central axis RX in a region surrounded by the primary coil 101A.
  • the second axis AX2 is orthogonal to the central axis RX at a midpoint between the support member 128 and the support member 130.
  • the first secondary coil 102A is wound around the second axis AX2 so as to alternately pass through the outside of the support member 128 and the outside of the support member 130.
  • the first secondary coil 102 ⁇ / b> A is supported by the rotation shaft 112 via the support member 128 and the support member 130.
  • the rotating shaft 112 includes a first conductor and a second conductor provided coaxially, and one end of the first secondary coil 102A is connected to the first conductor, and the first secondary The other end of the coil 102A is connected to the second conductor.
  • the first conductor is connected to the terminal 102 a via a slip ring in the rotary connector 140.
  • the second conductor is connected to the terminal 102 b through another slip ring in the rotary connector 140.
  • the second secondary coil 103A extends around a third axis AX3.
  • the third axis AX3 is orthogonal to the central axis RX in a region surrounded by the primary coil 101A.
  • the third axis AX3 intersects the second axis AX2.
  • the third axis AX3 and the second axis AX2 form a predetermined angle ⁇ p between each other.
  • the angle ⁇ p is not limited, but is, for example, 90 degrees.
  • the third axis AX3 is orthogonal to the central axis RX at the middle of the support member 132 and the support member 134.
  • the second secondary coil 103A is wound around the third axis AX3 so as to alternately pass through the outside of the support member 132 and the outside of the support member 134.
  • the second secondary coil 103 ⁇ / b> A is supported by the rotation shaft 112 via the support member 132 and the support member 134.
  • An insulation distance is secured between the second secondary coil 103A and the first secondary coil 102A.
  • the rotating shaft 112 includes a third conductor and a fourth conductor provided coaxially, one end of the second secondary coil 103A is connected to the third conductor, and the second secondary The other end of the coil 103A is connected to the fourth conductor.
  • the third conductor is connected to the terminal 103 a via the slip ring of another rotary connector provided in the vicinity of the support member 124.
  • the fourth conductor is connected to the terminal 103b via another slip ring in the other rotary connector.
  • terminals 101a and 101b are electrically connected to high frequency power supply 261 as shown in FIG. Also, the terminal 101b is electrically grounded.
  • the terminal 102 a is electrically connected to the upper electrode 20 via the phase adjustment circuit 281.
  • the terminal 103 a is electrically connected to the lower electrode 16 via the phase adjustment circuit 282.
  • the terminal 102 b and the terminal 103 b are electrically grounded.
  • the phase adjustment circuit 281 and the phase adjustment circuit 282 are configured to adjust the phase of the voltage of the lower electrode 16 relatively to the phase of the voltage of the upper electrode 20.
  • the phase adjustment circuit 281 is electrically connected to the upper electrode 20.
  • the phase adjustment circuit 281 includes a capacitor 281a and a variable inductor 281b.
  • the capacitor 281a and the variable inductor 281b are connected in series between the upper electrode 20 and the terminal 102a.
  • one end of capacitor 281a is connected to terminal 102a.
  • the other end of the capacitor 281a is connected to one end of the variable inductor 281b.
  • the other end of the variable inductor 281 b is electrically connected to the upper electrode 20.
  • the phase adjustment circuit 282 is electrically connected to the lower electrode 16.
  • the phase adjustment circuit 282 includes a capacitor 282a and a variable inductor 282b.
  • the capacitor 282a and the variable inductor 282b are connected in series between the lower electrode 16 and the terminal 103a.
  • one end of capacitor 282a is connected to terminal 103a.
  • the other end of the capacitor 282a is connected to one end of the variable inductor 282b.
  • the other end of the variable inductor 282 b is electrically connected to the lower electrode 16.
  • the primary coil 101A When the transformer 100A is used as the transformer 100 of the plasma processing apparatus 10, when the high frequency power from the high frequency power supply 261 is supplied to the primary coil 101A, the primary coil 101A is substantially parallel to the direction in which the first axis AX1 extends. Generates magnetic flux in the direction. Further, by adjusting the rotation angle of the secondary coil pair 106, the amount of magnetic flux passing through the first secondary coil 102A and the amount of magnetic flux passing through the second secondary coil 103A are adjusted. An induced electromotive force is generated in the first secondary coil 102A according to the amount of magnetic flux passing therethrough, and a first high frequency is output from the first secondary coil 102A.
  • an induced electromotive force is generated in the second secondary coil 103A according to the amount of magnetic flux passing through it, and a second high frequency is output from the second secondary coil 103A. Therefore, according to transformer 100A, the ratio of the power of the second high frequency to the power of the first high frequency can be adjusted.
  • the phase of the voltage of the lower electrode 16 relative to the phase of the voltage of the upper electrode 20 Is adjusted. That is, the phase difference ⁇ of the voltage of the lower electrode 16 with respect to the voltage of the upper electrode 20 is determined by the inductance of the variable inductor of at least one phase adjustment circuit.
  • (A) of FIG. 5 is a diagram showing the time change of the voltage of the upper electrode and the voltage of the lower electrode when the phase difference ⁇ is substantially zero, and (b) of FIG. 5 shows that the phase difference ⁇ is substantially zero It is a figure which shows the time change of the electric potential of plasma in the case of being, and the electric potential of a board
  • (A) of FIG. 6 is a diagram showing temporal changes of the voltage of the upper electrode and the voltage of the lower electrode when the phase difference ⁇ is not zero, and (b) of FIG. 6 is a case when the phase difference ⁇ is not zero It is a figure which shows the time change of the electric potential of plasma, and the electric potential of a board
  • the self-bias potential Vdc DC self-bias potential
  • the self-bias potential Vdc of the lower electrode 16 has a negative value.
  • phase difference ⁇ is substantially zero as shown in (a) of FIG. 5, that is, when the phase of the voltage of the upper electrode 20 and the phase of the voltage of the lower electrode 16 are substantially aligned.
  • the difference between the potential of plasma and the potential of the substrate W is small, and the self-bias potential Vdc becomes zero or a positive value.
  • the difference between the potential of the plasma and the potential of the substrate W is small and the self-bias potential Vdc is zero or a positive value, ions in the plasma collide with the substrate with relatively small energy.
  • phase difference ⁇ is not zero as shown in (a) of FIG. 6, that is, if the phase of the voltage of the upper electrode 20 and the phase of the voltage of the lower electrode 16 are not in phase
  • FIG. As shown, a large difference occurs between the potential of the plasma and the potential of the substrate W, and the self-bias potential Vdc becomes a negative value.
  • the difference between the potential of the plasma and the potential of the substrate W is large and the self bias potential Vdc is a negative value, ions in the plasma collide with the substrate with a large amount of energy.
  • the phase of the voltage of the lower electrode 16 is adjusted relative to the phase of the voltage of the upper electrode 20 by at least one of the phase adjustment circuit 281 and the phase adjustment circuit 282, thereby the potential of the plasma And the potential of the substrate W, and the self-bias potential Vdc can be adjusted, and hence the energy of ions colliding with the substrate W can be adjusted.
  • FIG. 7 schematically shows another transformer that can be used as a transformer of the plasma processing apparatus shown in FIG.
  • Transformer 100B shown in FIG. 7 can be used as transformer 100 of plasma processing apparatus 10 shown in FIG.
  • the transformer 100B includes a primary coil 101B, a first secondary coil 102B, and a second secondary coil 103B.
  • One end of the primary coil 101B is a terminal 101a, and the other end is a terminal 101b.
  • the terminal 101 a and the terminal 101 b are connected to the high frequency power supply 261.
  • the terminal 101b is electrically grounded.
  • the first secondary coil 102B and the second secondary coil 103B are electromagnetically coupled to the primary coil 101B.
  • One end of the first secondary coil 102B is a terminal 102a.
  • the terminal 102 a is electrically connected to the upper electrode 20 via the phase adjustment circuit 281.
  • one end of the second secondary coil 103B is a terminal 103a.
  • the terminal 103 a is electrically connected to the lower electrode 16 via the phase adjustment circuit 282.
  • the first secondary coil 102B and the second secondary coil 103B are formed from a single coil.
  • the secondary side of the transformer 100B has a single coil
  • the single coil has a plurality of taps 100t.
  • the plurality of taps 100t are configured to be selectively connected to the ground.
  • one side of the single coil becomes the first secondary coil 102B and the other side becomes the second secondary coil 103B with respect to the tap selected to be connected to the ground.
  • the ratio of the second high frequency power output from the second secondary coil 103B to the first high frequency power output from the first secondary coil 102B is adjusted It can be done.
  • FIG. 8 is a timing chart related to the film forming method shown in FIG.
  • the horizontal axis indicates time.
  • the vertical axis indicates the flow rate of the carrier gas, the flow rate of the reactive gas, the flow rate of the precursor gas, and the power of the high frequency (first high frequency and second high frequency). Note that, in step ST3, when the ratio R is zero, it is to be noted that the power of the second high frequency is zero.
  • the method MT1 is performed in a state where the substrate W is mounted on the support 14 of the plasma processing apparatus 10.
  • a film forming process DP1 is performed.
  • a film is formed by plasma enhanced atomic layer deposition (PEALD).
  • PEALD plasma enhanced atomic layer deposition
  • the film forming process DP1 includes a process ST1, a process ST2, and a process ST3.
  • the pressure in the internal space 12s is reduced by the exhaust device 24 to a designated pressure.
  • the reactive gas is supplied to the internal space 12s.
  • the reactive gas is supplied to the internal space 12s from the start time to the end time. Therefore, the process ST1 is continued over the execution period of the film forming process DP1.
  • the reactive gas is a gas that reacts with a precursor described later.
  • the reactive gas is an oxygen-containing gas.
  • the oxygen-containing gas may include one or more of oxygen gas (O 2 gas), CO gas, CO 2 gas, and the like.
  • the carrier gas may be supplied to the internal space 12s over the execution period of the film forming process DP1.
  • the carrier gas is an inert gas.
  • the carrier gas may include one or more noble gases such as He gas, Ne gas, Ar gas, Kr gas, and Xe gas.
  • the process ST2 and the process ST3 are alternately performed.
  • the precursor gas is supplied to the inner space 12s.
  • the precursor gas is a gas containing a precursor, and the precursor contains an element that constitutes a film to be formed on the substrate W.
  • the precursor gas is a titanium-containing gas.
  • the titanium containing gas may be a halogenated titanium gas.
  • the halogenated titanium gas is, for example, titanium tetrachloride gas (TiCl 4 gas).
  • the supply of the first high frequency and the second high frequency is stopped. That is, in the process ST2, plasma is not generated in the inner space 12s.
  • the precursor is adsorbed to the substrate W.
  • a period PA between the execution period of step ST2 and the execution period of step ST3 the supply of precursor gas to the inner space 12s is stopped.
  • a purge for discharging the precursor gas from the inner space 12s is performed.
  • the supply of the first high frequency and the second high frequency is stopped. That is, in the period PA, no plasma is generated in the inner space 12s.
  • step ST3 a plasma of a reactive gas is generated to enhance the reaction between the precursor and the reactive gas.
  • the first high frequency is supplied to the upper electrode 20, and the second high frequency is supplied to the lower electrode 16.
  • the power of the second high frequency is zero, and the second high frequency is not supplied to the lower electrode 16.
  • step ST3 a plasma of a reactive gas is generated in the internal space 12s.
  • a film is formed on the substrate by reacting ions and / or radicals in the plasma of the reactive gas with precursors on the substrate.
  • step ST3 of one embodiment the phase of the voltage of the lower electrode 16 is adjusted by the phase adjustment circuit 281 and / or the phase adjustment circuit 282 so that the ratio R is adjusted and the self bias potential Vdc is zero or has a positive value. It is adjusted relative to the phase of the voltage of the upper electrode 20.
  • the ratio R is adjusted so that the stress of the film formed on the substrate W is a desired pressure.
  • the larger the ratio R the smaller the compressive stress of the film or the larger the tensile stress of the film.
  • the smaller the ratio R the smaller the tensile stress of the film or the larger the compressive stress of the film.
  • the self bias potential Vdc is adjusted such that a film having a desired film density is formed on the substrate W.
  • the self bias potential Vdc When the self bias potential Vdc is zero or has a positive value, the energy of ions colliding with the substrate W (or a precursor on the substrate W) is reduced. Therefore, the film density of the film formed on the substrate W is increased. That is, the film density of the film becomes higher as the positive polarity self bias potential Vdc is larger.
  • the phase adjustment circuit 281 and / or the phase adjustment circuit 282 causes the voltage phase of the lower electrode 16 to be adjusted by the phase adjustment circuit 281 and / or the phase adjustment circuit 282 so that the ratio R is adjusted and the self bias potential Vdc has a negative value. It is adjusted relative to the phase of the voltage.
  • the ratio R is adjusted so that the stress of the film formed on the substrate W is a desired pressure.
  • the larger the ratio R the smaller the compressive stress of the film or the larger the tensile stress of the film.
  • the smaller the ratio R the smaller the tensile stress of the film or the larger the compressive stress of the film.
  • the self bias potential Vdc is adjusted such that a film having a desired film density is formed on the substrate W.
  • the self bias potential Vdc has a negative value
  • the energy of ions colliding with the substrate W (or a precursor on the substrate W) is increased. Therefore, the film density of the film formed on the substrate W becomes low. That is, the film density of the film is lower as the self bias potential Vdc is lower.
  • the larger the absolute value of the negative self-bias potential Vdc the lower the film density of the film.
  • step ST4 is performed.
  • step ST4 it is determined whether the stop condition is satisfied.
  • the stop condition is determined to be satisfied when the number of executions of the cycle including step ST2 and step ST3 has reached a predetermined number. The predetermined number of times is one or more. If it is determined in step ST4 that the stop condition is not satisfied, step ST2 is executed again. On the other hand, when it is determined in step ST4 that the stop condition is satisfied, the film forming process DP1 ends, and the execution of the method MT1 ends.
  • FIG. 9 is a flowchart showing a film forming method according to another embodiment.
  • the film forming method hereinafter, referred to as “method MT2”
  • FIG. 9 will be described by taking the case where the plasma processing apparatus 10 is used as an example.
  • other plasma processing apparatus may be used in the implementation of method MT2.
  • the method MT2 is performed in a state where the substrate W is mounted on the support 14 of the plasma processing apparatus 10.
  • a film forming process DP2 is performed.
  • the film forming process DP2 includes a process ST21, a process ST22, and a process ST23.
  • the pressure in the internal space 12s is reduced by the exhaust device 24 to a designated pressure.
  • the carrier gas may be supplied to the internal space 12s over the execution period of the film forming process DP2.
  • the carrier gas is an inert gas.
  • the carrier gas may include one or more noble gases such as He gas, Ne gas, Ar gas, Kr gas, and Xe gas.
  • precursor gas is supplied to internal space 12s.
  • the precursor gas used in step ST21 may be the same gas as the precursor gas used in step ST2.
  • the reactive gas is supplied to the internal space 12s.
  • the reactive gas used in step ST22 may be the same gas as the reactive gas used in step ST1.
  • a plasma of a reactive gas is generated to enhance the reaction between the precursor and the reactive gas. Specifically, in step ST23, the first high frequency is supplied to the upper electrode 20, and the second high frequency is supplied to the lower electrode 16.
  • step ST23 the ratio R is adjusted, and the self-bias potential Vdc is adjusted by the phase adjustment circuit 281 and / or the phase adjustment circuit 282. Adjustment of the ratio R and the self-bias potential Vdc in step ST23 is performed in the same manner as step ST3 of method MT1. In step ST23, when the ratio R is zero, the power of the second high frequency is zero, and the second high frequency is not supplied to the lower electrode 16.
  • the process ST21, the process ST22, and the process ST23 are simultaneously performed. Therefore, in the film forming process DP2, film formation is performed by plasma-enhanced chemical vapor deposition (PECVD).
  • PECVD plasma-enhanced chemical vapor deposition
  • FIG. 10 is a flow chart showing a film forming method according to still another embodiment.
  • method MT3 the film forming method illustrated in FIG. 10 will be described by taking the case where the plasma processing apparatus 10 is used as an example. However, other plasma processing apparatus may be used in the implementation of method MT3.
  • the process ST31 is performed.
  • the process ST31 is performed in a state where the first substrate is mounted on the support base 14.
  • a film forming process is performed under initial conditions.
  • the film forming process is the film forming process DP1 or the film forming process DP2 described above.
  • the initial conditions are the initial value Ri of the ratio R and the initial value ⁇ of the phase difference ⁇ of the voltage of the lower electrode 16 with respect to the voltage of the upper electrode 20 in the step of generating plasma of reactive gas (step ST3 or step ST23). including i .
  • step ST3 When the film forming process DP1 is performed in step ST31, in step ST3, the ratio R is set to an initial value Ri, the phase difference [Delta] [phi is set to an initial value [Delta] [phi i.
  • step ST31 When the film forming process DP2 is performed in step ST31, the ratio R is set to the initial value Ri and the phase difference ⁇ is set to the initial value ⁇ i in step ST23.
  • a first film is formed on the first substrate.
  • the first film is evaluated.
  • the evaluation result obtained in step ST32 includes at least the stress of the first film.
  • the stress of the first film can be measured by using a stress measuring device.
  • the stress measurement device can be determined, for example, from the radius of curvature of the substrate before and after the formation of the first film.
  • the evaluation result obtained in step ST32 may include a parameter reflecting the density of the first film.
  • the parameter reflecting the density of the first film may be, for example, the wet etching rate of the first film.
  • the wet etching rate of the first film can be obtained, for example, by etching the first film using dilute hydrofluoric acid. If the wet etching rate of the first film is high, the film density of the first film is low. If the wet etching rate of the first film is low, the film density of the first film is high.
  • step ST34 the processing conditions of the film forming process are determined based on the evaluation result obtained in the process ST32.
  • the following step ST34 is performed in a state where the second substrate is mounted on the support base 14.
  • a film forming process is performed to form a second film on the second substrate.
  • the film forming process performed in the process ST34 is the film forming process DP1 or the film forming process DP2, and is the same film forming process as the film forming process performed in the process ST31.
  • the processing conditions include at least the ratio R in the step (step ST3 or step ST23) of generating the plasma of the reactive gas.
  • the processing conditions may further include a phase difference ⁇ of the voltage of the lower electrode 16 with respect to the voltage of the upper electrode 20.
  • the polarity of the self-bias potential Vdc at the time of execution of step ST3 or step ST23 included in the film formation process at step ST34 is the same as that at step ST3 or step ST23 included in the film formation process in step ST31. It is identical to the polarity of the bias potential Vdc.
  • the phase difference ⁇ in the processing conditions is set to the same phase difference as the initial value ⁇ i of the phase difference in the initial conditions.
  • the ratio R in the processing conditions is set to reduce the difference between the stress of the first film and the desired stress.
  • step ST33 the initial value Ri of the ratio included in the initial conditions is set to reduce the compressive stress of the second film with respect to the stress of the first film or to increase the tensile stress of the second film.
  • the ratio R included in the processing conditions is increased.
  • step ST3 or step ST23 executed in step ST34 the power of the first high frequency power and the power of the second high frequency power are set based on the ratio R included in the processing conditions.
  • step ST33 in addition to the ratio R of the processing conditions, the phase difference ⁇ of the processing conditions is also set based on the evaluation result of the step ST32.
  • the processing condition phase difference ⁇ is determined based on the parameter reflecting the density of the first film. If it is determined from this parameter that the film density of the second film should be increased, then ⁇ is reduced. On the other hand, if it is determined from this parameter that the film density of the second film should be reduced, ⁇ is increased.
  • the method MT3 it is possible to set the film density of the second film by setting the phase difference ⁇ . Further, by adjusting the ratio R at the time of forming the second film based on the stress of the first film, it is possible to bring the stress of the second film closer to a desired stress.
  • the plasma processing apparatus 10 may not have one of the phase adjustment circuit 281 and the phase adjustment circuit 282.
  • the film formed by the method MT1 and the method MT2, and the first film and the second film formed by the method MT3 may be any film.
  • Such a film may be a silicon oxide film, a silicon nitride film, a tungsten-containing film or the like.
  • the precursor gas and the reactive gas can be appropriately selected according to the type of film to be formed.
  • the energy of ions incident on a substrate mounted on the support 14 was measured.
  • plasma was generated under each of the first to sixth conditions, and the energy of ions (average ion energy) was measured. The conditions of the first experiment are shown below.
  • FIG. 11 shows the result of the first experiment.
  • the horizontal axis indicates the self-bias potential Vdc
  • the vertical axis indicates the average ion energy.
  • a TiO 2 film was formed on each of the six substrates by the film forming process DP1.
  • the first to sixth conditions described above are used.
  • the number of cycles performed in the film forming process DP1 was adjusted to a number between 164 times and 218 times so that the film thickness of the formed TiO 2 film would be 15 nm.
  • the conditions of the film forming process DP1 in the second experiment are shown below.
  • the wet etching rate of each TiO 2 film was determined.
  • the results of the second experiment are shown in FIG.
  • the horizontal axis indicates the self-bias potential Vdc in step ST3
  • the vertical axis indicates the wet etching rate.
  • the wet etching rate had a negative correlation with the self-bias potential Vdc in step ST3. That is, it was confirmed that the wet etching rate becomes lower as the phase difference ⁇ becomes smaller. Therefore, it was confirmed that the film density increases as the phase difference ⁇ decreases.
  • step ST3 of the film forming process DP1 performed on four of the eight substrates the phase difference ⁇ is set to substantially zero and different ratios R are set so that a positive self-bias potential Vdc is generated.
  • step ST3 of the film forming process DP1 performed on the other four substrates the phase difference ⁇ is set so as to generate the self-bias potential Vdc having a negative polarity, and different ratios R are set.
  • the number of cycles performed in the film forming process DP1 was adjusted to a number between 164 times and 218 times such that the film thickness of the formed TiO 2 film was 15 nm.
  • the conditions of the film forming process DP1 in the third experiment are shown below.
  • the stress of the film formed on eight substrates was measured.
  • the results of the third experiment are shown in FIG.
  • the horizontal axis indicates the self-bias potential Vdc in step ST3
  • the vertical axis indicates the stress of the film.
  • the data included in the range where self bias potential Vdc is zero or more is data obtained by setting phase difference ⁇ so that positive polarity self bias potential Vdc is generated in step ST3.
  • the data included in the range where self bias potential Vdc is smaller than zero sets phase difference ⁇ so that negative polarity self bias potential Vdc is generated in step ST3. It is the data acquired by doing.
  • the ratio R and the self-bias potential Vdc have a positive correlation in the range where the self-bias potential Vdc is greater than or equal to zero. That is, as the ratio R increases, the self-bias potential Vdc increases. In the range where the self bias potential Vdc is smaller than zero, the ratio R and the absolute value of the self bias potential Vdc have a positive correlation. That is, as the ratio R increases, the absolute value of the negative self-bias potential Vdc increases. As shown in FIG. 13, when the phase difference ⁇ is set so that a positive polarity self-bias potential Vdc is generated, it is confirmed that the stress of the film increases to the positive side as the ratio R increases. .
  • the phase difference ⁇ was set so as to generate the negative self-bias potential Vdc, it was confirmed that the stress of the film increased to the positive side as the ratio R increased. Whether the film has a positive stress (tensile stress) or a negative stress (compressive stress) depends on the film type.
  • the TiO 2 film formed in the third experiment has negative stress. Therefore, when forming a TiO 2 film, it was confirmed that the compressive stress of the film can be reduced by the increase of the ratio R. In other words, it was confirmed that the reduction of the ratio R can increase the compressive stress of the film. From this result, when the film to be formed is a film having positive stress, it is presumed that the tensile stress of the film can be increased by the increase of the ratio R.

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244103A (ja) * 2007-03-27 2008-10-09 Tokyo Electron Ltd プラズマ処理装置
JP2010242180A (ja) * 2009-04-07 2010-10-28 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2016161629A (ja) * 2015-02-27 2016-09-05 株式会社昭和真空 多層膜被覆樹脂基板およびその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3016821B2 (ja) * 1990-06-15 2000-03-06 東京エレクトロン株式会社 プラズマ処理方法
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JPH09298193A (ja) * 1996-05-08 1997-11-18 Fuji Film Micro Device Kk パッシベーション膜の製造方法
TW478158B (en) * 1999-12-13 2002-03-01 Lg Philips Lcd Co Ltd Silicon oxide film forming method and manufacturing method of thin-film transistor
JP3776856B2 (ja) * 2002-09-13 2006-05-17 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2007302923A (ja) * 2006-05-09 2007-11-22 Brother Ind Ltd 成膜方法
JP2008047620A (ja) 2006-08-11 2008-02-28 Mitsubishi Heavy Ind Ltd プラズマ処理方法、及び、プラズマ処理装置
EP2249372B1 (en) * 2008-03-20 2013-01-02 Ruhr-Universität Bochum Method for controlling ion energy in radio frequency plasmas
JP2011023718A (ja) 2009-07-15 2011-02-03 Asm Japan Kk ＰＥＡＬＤによってＳｉ−Ｎ結合を有するストレス調節された誘電体膜を形成する方法
CN103327723A (zh) * 2012-03-23 2013-09-25 中微半导体设备(上海)有限公司 一种电容耦合等离子反应器及其控制方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244103A (ja) * 2007-03-27 2008-10-09 Tokyo Electron Ltd プラズマ処理装置
JP2010242180A (ja) * 2009-04-07 2010-10-28 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2016161629A (ja) * 2015-02-27 2016-09-05 株式会社昭和真空 多層膜被覆樹脂基板およびその製造方法

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