JP7018288B2 - 成膜方法 - Google Patents

成膜方法 Download PDF

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Publication number
JP7018288B2
JP7018288B2 JP2017196629A JP2017196629A JP7018288B2 JP 7018288 B2 JP7018288 B2 JP 7018288B2 JP 2017196629 A JP2017196629 A JP 2017196629A JP 2017196629 A JP2017196629 A JP 2017196629A JP 7018288 B2 JP7018288 B2 JP 7018288B2
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JP
Japan
Prior art keywords
gas
high frequency
film
lower electrode
film forming
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Active
Application number
JP2017196629A
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English (en)
Japanese (ja)
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JP2019070182A (ja
Inventor
伸也 岩下
剛 守屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2017196629A priority Critical patent/JP7018288B2/ja
Priority to KR1020207012315A priority patent/KR102390523B1/ko
Priority to CN201880064563.3A priority patent/CN111164235B/zh
Priority to TW107133773A priority patent/TW201928111A/zh
Priority to PCT/JP2018/035652 priority patent/WO2019073797A1/ja
Publication of JP2019070182A publication Critical patent/JP2019070182A/ja
Application granted granted Critical
Publication of JP7018288B2 publication Critical patent/JP7018288B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2017196629A 2017-10-10 2017-10-10 成膜方法 Active JP7018288B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017196629A JP7018288B2 (ja) 2017-10-10 2017-10-10 成膜方法
KR1020207012315A KR102390523B1 (ko) 2017-10-10 2018-09-26 성막 방법
CN201880064563.3A CN111164235B (zh) 2017-10-10 2018-09-26 成膜方法
TW107133773A TW201928111A (zh) 2017-10-10 2018-09-26 成膜方法
PCT/JP2018/035652 WO2019073797A1 (ja) 2017-10-10 2018-09-26 成膜方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017196629A JP7018288B2 (ja) 2017-10-10 2017-10-10 成膜方法

Publications (2)

Publication Number Publication Date
JP2019070182A JP2019070182A (ja) 2019-05-09
JP7018288B2 true JP7018288B2 (ja) 2022-02-10

Family

ID=66100612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017196629A Active JP7018288B2 (ja) 2017-10-10 2017-10-10 成膜方法

Country Status (5)

Country Link
JP (1) JP7018288B2 (zh)
KR (1) KR102390523B1 (zh)
CN (1) CN111164235B (zh)
TW (1) TW201928111A (zh)
WO (1) WO2019073797A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023112387A1 (zh) * 2021-12-15 2023-06-22

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244103A (ja) 2007-03-27 2008-10-09 Tokyo Electron Ltd プラズマ処理装置
JP2010242180A (ja) 2009-04-07 2010-10-28 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2016161629A (ja) 2015-02-27 2016-09-05 株式会社昭和真空 多層膜被覆樹脂基板およびその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3016821B2 (ja) * 1990-06-15 2000-03-06 東京エレクトロン株式会社 プラズマ処理方法
KR100291108B1 (ko) * 1993-03-17 2001-06-01 히가시 데쓰로 플라즈마 처리 시스템
JPH09298193A (ja) * 1996-05-08 1997-11-18 Fuji Film Micro Device Kk パッシベーション膜の製造方法
TW478158B (en) * 1999-12-13 2002-03-01 Lg Philips Lcd Co Ltd Silicon oxide film forming method and manufacturing method of thin-film transistor
JP3776856B2 (ja) * 2002-09-13 2006-05-17 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
JP2007302923A (ja) * 2006-05-09 2007-11-22 Brother Ind Ltd 成膜方法
JP2008047620A (ja) 2006-08-11 2008-02-28 Mitsubishi Heavy Ind Ltd プラズマ処理方法、及び、プラズマ処理装置
EP2249372B1 (en) * 2008-03-20 2013-01-02 Ruhr-Universität Bochum Method for controlling ion energy in radio frequency plasmas
JP2011023718A (ja) 2009-07-15 2011-02-03 Asm Japan Kk ＰＥＡＬＤによってＳｉ−Ｎ結合を有するストレス調節された誘電体膜を形成する方法
CN103327723A (zh) * 2012-03-23 2013-09-25 中微半导体设备(上海)有限公司 一种电容耦合等离子反应器及其控制方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008244103A (ja) 2007-03-27 2008-10-09 Tokyo Electron Ltd プラズマ処理装置
JP2010242180A (ja) 2009-04-07 2010-10-28 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2016161629A (ja) 2015-02-27 2016-09-05 株式会社昭和真空 多層膜被覆樹脂基板およびその製造方法

Also Published As

Publication number Publication date
WO2019073797A1 (ja) 2019-04-18
CN111164235A (zh) 2020-05-15
CN111164235B (zh) 2022-03-18
KR20200060473A (ko) 2020-05-29
KR102390523B1 (ko) 2022-04-25
JP2019070182A (ja) 2019-05-09
TW201928111A (zh) 2019-07-16

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