WO2019033802A1 - 阵列基板及其制备方法、显示面板 - Google Patents

阵列基板及其制备方法、显示面板 Download PDF

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Publication number
WO2019033802A1
WO2019033802A1 PCT/CN2018/086872 CN2018086872W WO2019033802A1 WO 2019033802 A1 WO2019033802 A1 WO 2019033802A1 CN 2018086872 W CN2018086872 W CN 2018086872W WO 2019033802 A1 WO2019033802 A1 WO 2019033802A1
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Prior art keywords
transparent substrate
light reflecting
array substrate
present disclosure
protective layer
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PCT/CN2018/086872
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English (en)
French (fr)
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操彬彬
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京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Priority to EP18846203.0A priority Critical patent/EP3671331A4/en
Priority to US16/331,285 priority patent/US20190355757A1/en
Publication of WO2019033802A1 publication Critical patent/WO2019033802A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/13356—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements
    • G02F1/133565—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements inside the LC elements, i.e. between the cell substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/02—Function characteristic reflective
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/03—Function characteristic scattering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits

Definitions

  • Embodiments of the present disclosure relate to the field of display technologies, and in particular, to an array substrate, a method for fabricating the same, and a display panel.
  • Embodiments of the present disclosure provide an array substrate, a method of fabricating the same, and a display panel.
  • an array substrate comprising: a transparent substrate, wherein the transparent substrate has a first side surface and a second side surface opposite to the first side surface; a light reflecting structure on the first side surface of the transparent substrate, wherein the second side surface of the transparent substrate has a rough region, and the rough region and the light reflecting structure are on the transparent substrate
  • the orthographic projections on the top coincide.
  • the rough region is a portion of a surface of a base material of the transparent substrate.
  • the light reflecting structure includes a black matrix and a conductive structure.
  • the conductive structure includes at least one of a data line, a data lead, a gate line, and a gate lead formed on the transparent substrate.
  • the base material of the transparent substrate is glass.
  • a display panel including the array substrate described in the first aspect of the embodiment of the present disclosure.
  • a method of fabricating an array substrate comprising: providing a transparent substrate, wherein the transparent substrate has a first side surface and a second side opposite the first side surface a surface, a light reflecting structure is disposed on the first side surface of the transparent substrate; and roughening the second side surface of the transparent substrate to form a rough region, wherein the rough region and the light
  • the orthographic projections of the reflective structures on the transparent substrate coincide.
  • the rough region is a portion of a surface of a base material of the transparent substrate.
  • the roughening includes: forming a protective layer on the second side surface of the transparent substrate; patterning the protective layer to form a patterned protective layer, wherein The patterned protective layer has an opening that coincides with an orthographic projection of the light reflecting structure on the transparent substrate; roughening a portion of the second side surface of the transparent substrate exposed by the opening to Forming the roughened region; and removing the patterned protective layer.
  • the material of the protective layer is a negative photoresist
  • the patterning includes exposing the negative photoresist using the light reflecting structure as a mask.
  • roughening the portion of the second side surface of the transparent substrate exposed by the opening to form the rough region includes wet or dry etching.
  • the base material of the transparent substrate is glass.
  • the wet etching uses an etchant including frosting powder, hydrofluoric acid, and hydrochloric acid.
  • the dry etching uses a plasma of at least one of He, CF 4 , H 2 , and O 2 .
  • the light reflecting structure includes a black matrix and a conductive structure.
  • the conductive structure includes at least one of a data line, a data lead, a gate line, and a gate lead formed on the transparent substrate.
  • FIG. 1 is a schematic cross-sectional view showing a frameless display panel
  • FIG. 2 is a schematic cross-sectional view schematically showing an array substrate according to an embodiment of the present disclosure
  • FIG. 3 is a schematic structural view schematically showing a display panel according to an embodiment of the present disclosure
  • FIG. 4 is a flow chart schematically showing a method of preparing an array substrate according to an embodiment of the present disclosure
  • FIG. 5 is a schematic cross-sectional view schematically showing formation of a protective layer according to an embodiment of the present disclosure
  • FIG. 6 is a schematic cross-sectional view schematically showing formation of a patterned protective layer in accordance with an embodiment of the present disclosure
  • FIG. 7 is a schematic cross-sectional view schematically showing formation of a rough region according to an embodiment of the present disclosure
  • FIG. 8 is a view schematically showing a reflected light path when ambient light is incident on an array substrate according to an embodiment of the present disclosure
  • FIG. 9 is a schematic cross-sectional view schematically showing an array substrate according to an embodiment of the present disclosure.
  • an element or layer when an element or layer is referred to as being “on” another element or layer, it may be directly on the other element or layer, or an element or layer may be present; likewise, when the element or layer is When the other element or layer is "under”, it may be directly under the other element or layer, or there may be at least one intermediate element or layer; when the element or layer is referred to as being between two or two layers It may be a single element or layer between two or two layers, or more than one intermediate element or layer may be present.
  • FIG. 1 shows a frameless display panel, wherein a backlight module and an array substrate are respectively disposed on opposite sides of the color filter substrate, and the array substrate serves as a display side.
  • the array substrate When the ambient light is strong, the array substrate has a strong reflection of light, which causes the reflection to be relatively obvious, thereby affecting the display effect of the display device.
  • an array substrate is provided.
  • the surface of the transparent substrate of the array substrate has a rough region, which can reduce the reflection of ambient light by an undesired reflective structure (for example, a black matrix and a conductive structure) on the transparent substrate, thereby improving the display effect of the display device.
  • an undesired reflective structure for example, a black matrix and a conductive structure
  • the array substrate 10 includes: a transparent substrate 1 having a first side surface 11 and a second side surface 12 opposite to the first side surface 11; and a first side surface of the transparent substrate 1 A plurality of light reflecting structures 2 on 11.
  • the second side surface 12 of the transparent substrate 1 has a plurality of rough regions 13 which coincide with the orthographic projection of the light reflecting structure 2 on the transparent substrate 1.
  • the rough region 13 is a part of the surface of the base material of the transparent substrate 1.
  • the base material of the transparent substrate 1 may be glass.
  • the light reflecting structure 2 may include a black matrix and a conductive structure.
  • the conductive structure may include at least one of a data line, a data lead, a gate line, and a gate lead formed on the transparent substrate 1.
  • the light reflecting structure 2 may be made of a metal material.
  • the transparent substrate 1 of the array substrate 10 when ambient light is incident on the transparent substrate 1 of the array substrate 10, since the transparent substrate 1 has the rough region 13, the light incident on the rough region 13 generates diffuse reflection, thereby weakening the light reflecting structure 2 The reflection of ambient light in a certain direction can thereby enhance the display effect of the display device.
  • FIG. 3 is a schematic structural view schematically showing a display panel according to an embodiment of the present disclosure.
  • the display panel 100 includes the array substrate 10 as shown in FIG. 1, so that the display effect of the display panel 100 can be improved.
  • a method of preparing an array substrate is provided. It is possible to prepare an array substrate having a rough region on the surface of the base material of the transparent substrate, thereby improving the display effect of the display device.
  • FIG. 4 is a flow chart schematically showing a method of preparing an array substrate according to an embodiment of the present disclosure.
  • a transparent substrate is provided; and in step S402, a protective layer is formed on the surface of the transparent substrate.
  • FIG. 5 is a schematic cross-sectional view schematically showing preparation of a protective layer according to an embodiment of the present disclosure.
  • a transparent substrate 1 having a first side surface 11 and a second side surface 12 opposite to the first side surface 11 is provided, and is disposed on the first side surface 11 of the transparent substrate 1.
  • a protective layer 4 is formed on the second side surface 12 of the transparent substrate 1.
  • FIG. 6 is a schematic cross-sectional view schematically showing formation of a patterned protective layer in accordance with an embodiment of the present disclosure.
  • the protective layer 4 is patterned to form a patterned protective layer 41.
  • the protective layer 4 is exposed using radiation such as ultraviolet rays using the light reflecting structure 2 as a mask.
  • the material of the protective layer 4 is a negative photoresist.
  • the patterned protective layer 41 has a plurality of openings 42 wherein the openings 42 coincide with the orthographic projection of the light reflecting structure 2 on the transparent substrate 1.
  • the light reflecting structure 2 may include a black matrix and a conductive structure.
  • the conductive structure may include at least one of a data line, a data lead, a gate line, and a gate lead formed on the transparent substrate 1.
  • the light reflecting structure 2 may be made of a metal material.
  • FIG. 7 is a schematic cross-sectional view schematically showing formation of a rough region according to an embodiment of the present disclosure.
  • the second side surface 12 of the transparent substrate 1 is roughened to form a rough region 13.
  • the portion of the second side surface 12 of the transparent substrate 1 exposed by the opening 42 is roughened to form a rough region 13.
  • the rough region 13 is a part of the surface of the base material of the transparent substrate 1.
  • the base material of the transparent substrate 1 is glass.
  • the above roughening may include wet or dry etching.
  • wet etching uses an etchant including frosting powder, hydrofluoric acid, and hydrochloric acid.
  • a frosting powder, hydrofluoric acid, and hydrochloric acid are mixed to prepare an etchant, and the etchant is applied (for example, sprayed) to at least a portion of the second side surface 12 of the transparent substrate 1 exposed by the opening 42 to This portion is sufficiently reacted with the etchant to form the rough region 13.
  • the dry etching uses a plasma of at least one of He, CF 4 , H 2 , and O 2 .
  • a portion of the second side surface 12 of the transparent substrate 1 exposed by the opening 42 is physically bombarded using a plasma of at least one of He, CF 4 , H 2 , and O 2 in a dry etching apparatus to form Rough area 13.
  • step S405 the patterned protective layer is removed. Specifically, the patterned protective layer 41 is removed, thereby preparing the array substrate 10 as shown in FIG. 2.
  • FIG. 8 is a view schematically showing a reflected light path when ambient light is incident on an array substrate according to an embodiment of the present disclosure.
  • FIG. 8 when ambient light is incident on the array substrate 10, light incident on the rough region 13 is diffusely reflected so that ambient light is reflected in a plurality of directions, thereby reducing reflection of ambient light in a certain direction. This improves the display effect of the display device.
  • FIG. 9 shows a schematic cross-sectional view of the array substrate when the conductive structures are gate lines and gate leads.
  • the array substrate 20 includes: a transparent substrate 1 having a first side surface 11 and a second side surface 12 opposite to the first side surface 11; a second surface located on the transparent substrate 1 a rough region 13 on the side surface 12; a gate line 21 and a gate lead 22 on the first side surface 11 of the transparent substrate 1, wherein the material of the gate line 21 and the gate lead 22 is metal; a first side surface 11, a gate insulating layer 3 on the gate line 21 and the gate lead 22, an active layer 6 and a source/drain electrode layer 7 on the gate insulating layer 3, and a gate insulating layer 3.
  • the ambient light is irradiated onto the transparent substrate 1, the light is diffusely reflected on the rough region 13, and the reflection of the ambient light in a certain direction by the gate line 21 and the gate lead 22 made of metal can be reduced, thereby enhancing the inclusion.
  • the surface of the base material of the transparent substrate of the array substrate has a rough region, which can reduce black matrix, gate lines, gate leads, data lines, and data leads on the transparent substrate to ambient light. Reflection in one direction, thereby improving the display effect of the display device.

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Abstract

一种阵列基板（10）及其制备方法、显示面板（100），阵列基板（10）包括：透明基板（1），其中，透明基板（1）具有第一侧表面（11）和与第一侧表面（11）相对的第二侧表面（12）；以及位于透明基板（1）的第一侧表面（11）的光反射结构（2），其中，透明基板（1）的第二侧表面（12）具有粗糙区域（13），粗糙区域（13）与光反射结构（2）在透明基板（1）上的正投影重合。

Description

阵列基板及其制备方法、显示面板
相关申请的交叉引用
本申请要求于2017年8月17日递交的中国专利申请第201710707687.6号优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及显示技术领域，尤其涉及一种阵列基板及其制备方法、显示面板。
背景技术
目前，在不增加电子设备的尺寸的前提下，为了增大显示屏的尺寸，越来越多的生产厂家致力于研究无边框的显示屏。
发明内容
本公开的实施例提供了一种阵列基板及其制备方法、显示面板。
根据本公开的实施例的第一方面，提供一种阵列基板，其包括：透明基板，其中，所述透明基板具有第一侧表面和与所述第一侧表面相对的第二侧表面；以及位于所述透明基板的所述第一侧表面上的光反射结构，其中，所述透明基板的所述第二侧表面具有粗糙区域，所述粗糙区域与所述光反射结构在所述透明基板上的正投影重合。
在本公开的实施例中，所述粗糙区域为所述透明基板的基体材料的表面的一部分。
在本公开的实施例中，所述光反射结构包括黑矩阵和导电结构。
在本公开的实施例中，所述导电结构包括形成在所述透明基板上的数据线、数据引线、栅极线和栅极引线中至少一者。
在本公开的实施例中，所述透明基板的基体材料为玻璃。
根据本公开的实施例的第二方面，提供一种包括在本公开的实施例的第一方面中描述的阵列基板的显示面板。
根据本公开的实施例的第三方面，提供一种制备阵列基板的方法，包括：提供透明基板，其中，所述透明基板具有第一侧表面和与所述第一侧表面相对的第二侧表面，在所述透明基板的所述第一侧表面上设置有光反射结构；以及粗糙化所述透明基板的所述第二侧表面以形成粗糙区域，其中，所述粗糙区域与所述光反射结构在所述透明基板上的正投影重合。
在本公开的实施例中，所述粗糙区域为所述透明基板的基体材料的表面的一部分。
在本公开的实施例中，所述粗糙化包括：在所述透明基板的所述第二侧表面形成保护层；对所述保护层进行构图，以形成图案化的保护层，其中，所述图案化的保护层具有开口，所述开口与所述光反射结构在所述透明基板上的正投影重合；粗糙化所述透明基板的所述第二侧表面的由所述开口暴露的部分以形成所述粗糙区域；以及去除所述图案化的保护层。
在本公开的实施例中，所述保护层的材料为负性光致抗蚀剂，以及所述构图包括使用所述光反射结构为掩模曝光所述负性光致抗蚀剂。
在本公开的实施例中，粗糙化所述透明基板的所述第二侧表面的由所述开口暴露的部分以形成所述粗糙区域包括湿法或干法蚀刻。
在本公开的实施例中，所述透明基板的基体材料为玻璃。
在本公开的实施例中，所述湿法蚀刻使用包括蒙砂粉、氢氟酸和盐酸的蚀刻剂。
在本公开的实施例中，所述干法蚀刻使用He、CF 4、H 2和O 2中至少一者的等离子体。
在本公开的实施例中，所述光反射结构包括黑矩阵和导电结构。
在本公开的实施例中，所述导电结构包括形成在所述透明基板上的数据线、数据引线、栅极线和栅极引线中至少一者。
适应性的进一步的方面和范围从本文中提供的描述变得明显。应当理 解，本申请的各个方面可以单独或者与一个或多个其他方面组合实施。还应当理解，本文中的描述和特定实施例旨在仅说明的目的并不旨在限制本申请的范围。
附图说明
本文中描述的附图用于仅对所选择的实施例的说明的目的，并不是所有可能的实施方式，并且不旨在限制本申请的范围，其中：
图1是示意性示出一种无边框显示面板的截面示意图；
图2是示意性示出根据本公开实施例的阵列基板的截面示意图；
图3是示意性示出根据本公开实施例的显示面板的结构示意图；
图4是示意性示出根据本公开实施例的制备阵列基板的方法的流程图；
图5是示意性示出根据本公开实施例的形成保护层的截面示意图；
图6是示意性示出根据本公开实施例的形成图案化的保护层的截面示意图；
图7是示意性示出根据本公开实施例的形成粗糙区域的截面示意图；
图8是示意性示出环境光入射到根据本公开实施例的阵列基板时的反射光路图；以及
图9是示意性示出根据本公开实施例的阵列基板的截面示意图。
贯穿这些附图的各个视图，相应的参考编号指示相应的部件或特征。
具体实施方式
首先，需要说明的是，除非上下文中另外明确地指出，否则在本文和所附权利要求中所使用的词语的单数形式包括复数，反之亦然。因而，当提及单数时，通常包括相应术语的复数。相似地，措辞“包含”和“包括”将解释为包含在内而不是独占性地。同样地，术语“包括”和“或”应当解释为包括在内的，除非本文中另有说明。在本文中使用术语“实例”之处，特 别是当其位于一组术语之后时，所述“实例”仅仅是示例性的和阐述性的，且不应当被认为是独占性的或广泛性的。
另外，还需要说明的是，在本公开的描述中，术语“上”、“之上”、“下”、“之下”、“顶”、“底”、“之间”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。此外，当元件或层被称为在另一元件或层“上”时，它可以直接在该另一元件或层上，或者可以存在中间的元件或层；同样，当元件或层被称为在另一元件或层“下”时，它可以直接在该另一元件或层下，或者可以存在至少一个中间的元件或层；当元件或层被称为在两元件或两层“之间”时，其可以为该两元件或两层之间的唯一的元件或层，或者可以存在一个以上的中间元件或层。
本公开中描绘的流程图仅仅是一个例子。在不脱离本公开精神的情况下，可以存在该流程图或其中描述的步骤的很多变型。例如，所述步骤可以以不同的顺序进行，或者可以添加、删除或者修改步骤。这些变型都被认为是所要求保护的方面的一部分。
现将参照附图更全面地描述示例性的实施例。
图1示出一种无边框显示面板，其中，彩膜基板的相对两侧分别设置有背光模组和阵列基板，阵列基板作为显示侧。当环境光较强时，阵列基板对光的反射较强，导致反光比较明显，由此会影响显示装置的显示效果。
在本公开的实施例中，提供了一种阵列基板。该阵列基板的透明基板的表面具有粗糙区域，能够减少透明基板上的不希望的反光结构(例如，黑矩阵和导电结构)对环境光的反射，从而提升显示装置的显示效果。
图2是示意性示出根据本公开实施例的阵列基板的截面示意图。如图2所示，阵列基板10包括：透明基板1，该透明基板1具有第一侧表面11和与第一侧表面11相对的第二侧表面12；以及位于透明基板1的第一侧表面11上的多个光反射结构2。透明基板1的第二侧表面12具有多个粗 糙区域13，该粗糙区域13与光反射结构2在透明基板1上的正投影重合。在本公开的实施例中，粗糙区域13为透明基板1的基体材料的表面的一部分。作为一个示例，透明基板1的基体材料可以为玻璃。在本公开的实施例中，光反射结构2可以包括黑矩阵和导电结构。作为一个示例，导电结构可以包括形成在透明基板1上的数据线、数据引线、栅极线和栅极引线中至少一者。在本公开的实施例中，光反射结构2可以由金属材料制成。
在本公开的实施例中，当环境光入射到阵列基板10的透明基板1上时，由于透明基板1具有粗糙区域13，入射到粗糙区域13的光产生漫反射，从而减弱光反射结构2对环境光在某一方向上的反射，由此能够提升显示装置的显示效果。
在本公开的实施例中，提供了一种显示面板。图3是示意性示出根据本公开实施例的显示面板的结构示意图。如图3所示，显示面板100包括如图1所示的阵列基板10，从而能够提升显示面板100的显示效果。
在本公开的实施例中，提供了一种制备阵列基板的方法。能够制备出在透明基板的基体材料的表面具有粗糙区域的阵列基板，从而提升显示装置的显示效果。
图4是示意性示出根据本公开实施例的制备阵列基板的方法的流程图。如图4所示，在步骤S401中，提供透明基板；以及在步骤S402中，在透明基板的表面上形成保护层。图5是示意性示出根据本公开实施例的制备保护层的截面示意图。如图5所示，提供透明基板1，该透明基板1具有第一侧表面11和与该第一侧表面11相对的第二侧表面12，并且在透明基板1的第一侧表面11上设置有多个光反射结构2。接着，在透明基板1的第二侧表面12上形成保护层4。
如图4所示，在步骤S403中，对保护层进行构图。图6是示意性示出根据本公开实施例的形成图案化的保护层的截面示意图。在本公开的实施例中，对保护层4进行构图，以形成图案化的保护层41。具体地，以光反射结构2为掩模，使用例如紫外线的辐射对保护层4进行曝光。在本公开 的实施例中，保护层4的材料为负性光致抗蚀剂。在本公开的实施例中，图案化的保护层41具有多个开口42，其中，开口42与光反射结构2在透明基板1上的正投影重合。
在本公开的实施例中，光反射结构2可以包括黑矩阵和导电结构。作为一个示例，导电结构可以包括形成在透明基板1上的数据线、数据引线、栅极线和栅极引线中至少一者。在本公开的实施例中，光反射结构2可以由金属材料制成。
如图4所示，在步骤S404中，形成粗糙区域。图7是示意性示出根据本公开实施例的形成粗糙区域的截面示意图。在本公开的实施例中，粗糙化透明基板1的第二侧表面12以形成粗糙区域13。具体地，如图7所示，粗糙化透明基板1的第二侧表面12的由开口42暴露的部分以形成粗糙区域13。在本公开的实施例中，粗糙区域13为透明基板1的基体材料的表面的一部分。作为一个示例，透明基板1的基体材料为玻璃。在本公开的实施例中，上述粗糙化可以包括湿法或干法蚀刻。
作为一个示例，湿法蚀刻使用包括蒙砂粉、氢氟酸和盐酸的蚀刻剂。具体地，将蒙砂粉、氢氟酸和盐酸混合以配制蚀刻剂，将该蚀刻剂至少施加(例如，喷淋)到透明基板1的第二侧表面12的由开口42暴露的部分，以使该部分与蚀刻剂充分反应，从而形成粗糙区域13。
作为一个示例，干法蚀刻使用He、CF 4、H 2和O 2中至少一者的等离子体。具体地，在干法蚀刻设备中使用He、CF 4、H 2和O 2中至少一者的等离子体对透明基板1的第二侧表面12的由开口42暴露的部分进行物理轰击，从而形成粗糙区域13。
如图4所示，在步骤S405中，去除图案化的保护层。具体地，去除图案化的保护层41，从而制备出如图2所示的阵列基板10。
图8是示意性示出环境光入射到根据本公开实施例的阵列基板时的反射光路图。如图8所示，当环境光入射到阵列基板10上时，入射到粗糙区域13的光产生漫反射，以使环境光被反射到多个方向，从而减少环境光在 某一方向上的反射，由此提升显示装置显示效果。
图9示出当导电结构为栅极线和栅极引线时的阵列基板的截面示意图。如图9所示，阵列基板20包括：透明基板1，其中，该透明基板1具有第一侧表面11和与该第一侧表面11相对的第二侧表面12；位于透明基板1的第二侧表面12上的粗糙区域13；位于透明基板1的第一侧表面11上的栅极线21和栅极引线22，其中，栅极线21和栅极引线22的材料为金属；位于透明基板1的第一侧表面11、栅极线21和栅极引线22上的栅极绝缘层3；位于栅极绝缘层3上的有源层6和源/漏电极层7；位于栅极绝缘层3、有源层6和源/漏电极层7上的钝化层5；以及通过钝化层5中的过孔连接源/漏电极层7的导电接触8。当环境光照射到透明基板1上时，光在粗糙区域13上产生漫反射，能够减少由金属制成的栅极线21和栅极引线22对环境光在某一方向上的反射，从而提升包括阵列基板20的显示装置的显示效果。
在本公开的实施例中，阵列基板的透明基板的基体材料的表面具有粗糙区域，能够减少透明基板上的黑矩阵、栅极线、栅极引线、数据线和数据引线等对环境光在某一方向上的反射，从而提升显示装置的显示效果。
以上为了说明和描述的目的提供了实施例的前述描述。其并不旨在是穷举的或者限制本申请。特定实施例的各个元件或特征通常不限于特定的实施例，但是，在合适的情况下，这些元件和特征是可互换的并且可用在所选择的实施例中，即使没有具体示出或描述。同样也可以以许多方式来改变。这种改变不能被认为脱离了本申请，并且所有这些修改都包含在本申请的范围内。

Claims (16)

  1. 一种阵列基板，包括：
    透明基板，其中，所述透明基板具有第一侧表面和与所述第一侧表面相对的第二侧表面；以及
    位于所述透明基板的所述第一侧表面上的光反射结构，
    其中，所述透明基板的所述第二侧表面具有粗糙区域，所述粗糙区域与所述光反射结构在所述透明基板上的正投影重合。
  2. 根据权利要求1所述的阵列基板，其中，所述粗糙区域为所述透明基板的基体材料的一部分。
  3. 根据权利要求1所述的阵列基板，其中，所述光反射结构包括黑矩阵和导电结构。
  4. 根据权利要求3所述的阵列基板，其中，所述导电结构包括形成在所述透明基板上的数据线、数据引线、栅极线和栅极引线中至少一者。
  5. 根据权利要求2所述的阵列基板，其中，所述透明基板的基体材料为玻璃。
  6. 一种包括权利要求1至5中任一项所述的阵列基板的显示面板。
  7. 一种制备阵列基板的方法，包括：
    提供透明基板，其中，所述透明基板具有第一侧表面和与所述第一侧表面相对的第二侧表面，在所述透明基板的所述第一侧表面上设置有光反射结构；以及
    粗糙化所述透明基板的所述第二侧表面以形成粗糙区域，
    其中，所述粗糙区域与所述光反射结构在所述透明基板上的正投影重合。
  8. 根据权利要求7所述的方法，其中，所述粗糙区域为所述透明基板的基体材料的一部分。
  9. 根据权利要求7所述的方法，其中，所述粗糙化包括：
    在所述透明基板的所述第二侧表面形成保护层；
    对所述保护层进行构图，以形成图案化的保护层，其中，所述图案化的保护层具有开口，所述开口与所述光反射结构在所述透明基板上的正投影重合；
    粗糙化所述透明基板的所述第二侧表面的由所述开口暴露的部分以形成所述粗糙区域；以及
    去除所述图案化的保护层。
  10. 根据权利要求9所述的方法，其中，所述保护层的材料为负性光致抗蚀剂，以及所述构图包括使用所述光反射结构为掩模曝光所述负性光致抗蚀剂。
  11. 根据权利要求9所述的方法，其中，粗糙化所述透明基板的所述第二侧表面的由所述开口暴露的部分以形成所述粗糙区域包括湿法或干法蚀刻。
  12. 根据权利要求11所述的方法，其中，所述透明基板的基体材料为玻璃。
  13. 根据权利要求12所述的方法，其中，所述湿法蚀刻使用包括蒙砂粉、氢氟酸和盐酸的蚀刻剂。
  14. 根据权利要求12所述的方法，其中，所述干法蚀刻使用He、CF 4、H 2和O 2中至少一者的等离子体。
  15. 根据权利要求7所述的方法，其中，所述光反射结构包括黑矩阵和导电结构。
  16. 根据权利要求15所述的方法，其中，所述导电结构包括形成在所述透明基板上的数据线、数据引线、栅极线和栅极引线中至少一者。
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