WO2019004518A1 - 발광소자 패키지 및 광원 장치 - Google Patents
발광소자 패키지 및 광원 장치 Download PDFInfo
- Publication number
- WO2019004518A1 WO2019004518A1 PCT/KR2017/011082 KR2017011082W WO2019004518A1 WO 2019004518 A1 WO2019004518 A1 WO 2019004518A1 KR 2017011082 W KR2017011082 W KR 2017011082W WO 2019004518 A1 WO2019004518 A1 WO 2019004518A1
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- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- emitting device
- electrode
- frame
- opening
- Prior art date
Links
- 239000000853 adhesive Substances 0.000 claims abstract description 164
- 229920005989 resin Polymers 0.000 claims description 231
- 239000011347 resin Substances 0.000 claims description 231
- 230000001070 adhesive effect Effects 0.000 claims description 162
- 239000000463 material Substances 0.000 claims description 142
- 238000000034 method Methods 0.000 claims description 93
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 692
- 239000004065 semiconductor Substances 0.000 description 167
- 230000008569 process Effects 0.000 description 73
- 238000004519 manufacturing process Methods 0.000 description 65
- 238000000465 moulding Methods 0.000 description 39
- 238000002844 melting Methods 0.000 description 35
- 239000000758 substrate Substances 0.000 description 29
- 239000004593 Epoxy Substances 0.000 description 24
- 238000000605 extraction Methods 0.000 description 24
- 239000002210 silicon-based material Substances 0.000 description 24
- 229910052709 silver Inorganic materials 0.000 description 24
- 229920006375 polyphtalamide Polymers 0.000 description 22
- 229920006336 epoxy molding compound Polymers 0.000 description 19
- 230000008018 melting Effects 0.000 description 19
- 229920001123 polycyclohexylenedimethylene terephthalate Polymers 0.000 description 19
- 229920001296 polysiloxane Polymers 0.000 description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 17
- 239000011241 protective layer Substances 0.000 description 17
- 239000004332 silver Substances 0.000 description 17
- 239000004954 Polyphthalamide Substances 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 13
- 229910052737 gold Inorganic materials 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 12
- 239000000956 alloy Substances 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 11
- 230000008901 benefit Effects 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 229910010413 TiO 2 Inorganic materials 0.000 description 9
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 9
- 229910052697 platinum Inorganic materials 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 229920000106 Liquid crystal polymer Polymers 0.000 description 6
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 6
- 229910019897 RuOx Inorganic materials 0.000 description 6
- 239000006089 photosensitive glass Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 230000007480 spreading Effects 0.000 description 6
- 238000003892 spreading Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229920006128 poly(nonamethylene terephthalamide) Polymers 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910052789 astatine Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- -1 Ta 2 O 5 Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000004887 air purification Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/003—Arrangement of electric circuit elements in or on lighting devices the elements being electronics drivers or controllers for operating the light source, e.g. for a LED array
- F21V23/007—Arrangement of electric circuit elements in or on lighting devices the elements being electronics drivers or controllers for operating the light source, e.g. for a LED array enclosed in a casing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/16257—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the bump connector connecting to a bonding area disposed in a recess of the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
- H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/26175—Flow barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Definitions
- the embodiments relate to a semiconductor device package, a method of manufacturing a semiconductor device package, and a light source device.
- Semiconductor devices including compounds such as GaN and AlGaN have many merits such as wide and easy bandgap energy, and can be used variously as light emitting devices, light receiving devices, and various diodes.
- a light emitting device such as a light emitting diode or a laser diode using a Group III-V or Group II-VI compound semiconductor material can be used for a variety of applications such as red, Blue and ultraviolet rays can be realized.
- a light emitting device such as a light emitting diode or a laser diode using a Group III-V or Group-VI-VI compound semiconductor material can realize a white light source having high efficiency by using a fluorescent material or combining colors.
- Such a light emitting device has advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environment friendliness compared with conventional light sources such as fluorescent lamps and incandescent lamps.
- a light-receiving element such as a photodetector or a solar cell
- a Group III-V or Group-VI-VI compound semiconducting material development of a device material absorbs light of various wavelength regions to generate a photocurrent , It is possible to use light in various wavelength ranges from the gamma ray to the radio wave region. Further, such a light receiving element has advantages of fast response speed, safety, environmental friendliness and easy control of element materials, and can be easily used for power control or microwave circuit or communication module.
- the semiconductor device can be replaced with a transmission module of an optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, White light emitting diode (LED) lighting devices, automotive headlights, traffic lights, and gas and fire sensors.
- CCFL cold cathode fluorescent lamp
- LED White light emitting diode
- semiconductor devices can be applied to high frequency application circuits, other power control devices, and communication modules.
- the light emitting device can be provided as a pn junction diode having a characteristic in which electric energy is converted into light energy by using a group III-V element or a group II-VI element in the periodic table, Various wavelengths can be realized by adjusting the composition ratio.
- nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy.
- a blue light emitting element, a green light emitting element, an ultraviolet (UV) light emitting element, and a red (RED) light emitting element using a nitride semiconductor are commercially available and widely used.
- an ultraviolet light emitting device it is a light emitting diode that generates light distributed in a wavelength range of 200 nm to 400 nm. It is used for sterilizing and purifying in the wavelength band, short wavelength, Can be used.
- UV-A 315nm ⁇ 400nm
- UV-B 280nm ⁇ 315nm
- UV-C 200nm ⁇ 280nm
- UV-A 315nm ⁇ 400nm
- UV-B 280nm ⁇ 315nm
- UV-C 200nm ⁇ 280nm
- studies are being made on a method for improving the light extraction efficiency of a semiconductor device and improving the light intensity at a package end in a semiconductor device package.
- studies have been made on a method for improving the bonding strength between a package electrode and a semiconductor device in a semiconductor device package.
- Embodiments can provide a semiconductor device package, a method of manufacturing a semiconductor device package, and a light source device capable of improving light extraction efficiency and electrical characteristics.
- Embodiments can provide a semiconductor device package, a method of manufacturing a semiconductor device package, and a light source device, which can improve the process efficiency and provide a new package structure to reduce the manufacturing cost and improve the manufacturing yield.
- Embodiments can provide a semiconductor device package and a method of manufacturing a semiconductor device package that can prevent a re-melting phenomenon from occurring in a bonding region of a semiconductor device package in a process of re-bonding the semiconductor device package to a substrate or the like have.
- a light emitting device package includes first and second frames spaced apart from each other; A body disposed between the first and second frames; A light emitting element including first and second electrodes; And an adhesive disposed between the body and the light emitting device, wherein each of the first and second frames includes first and second openings penetrating the upper surface and the lower surface, and the body is concave Wherein the adhesive is disposed in the recess, the first electrode is disposed on the first opening, and the second electrode is disposed on the second opening.
- the adhesive may be disposed in direct contact with the upper surface of the body and the lower surface of the light emitting device.
- the light emitting device package may include a first conductive layer provided in the first opening and disposed in direct contact with a lower surface of the first electrode, a second conductive layer provided in the second opening, And a second conductive layer disposed on the second conductive layer.
- the first conductive layer includes a first upper conductive layer provided in an upper region of the first opening and a first lower conductive layer provided in a lower region of the first opening, And the first lower conductive layer may include different materials.
- the first frame and the second frame may be provided as a conductive frame.
- the first frame and the second frame may be provided as an insulating frame.
- the light emitting device package may include a first resin part provided in the first upper recess and a second resin part provided in the second upper recess, wherein the first resin part and the second resin part White silicon.
- a light emitting device package may include a first lower recess provided on a lower surface of the first frame and spaced apart from the first opening and a second lower recess provided on a lower surface of the second frame, And a second bottom recess that is recessed.
- the light emitting device package may include a first resin part provided in the first lower recess and a second resin part provided in the second lower recess, wherein the first resin part and the second resin part And may include materials such as the body.
- the first and second lower recesses may be provided with a material such as the first and second conductive layers and / or a material such as the body.
- the light extraction efficiency, electrical characteristics and reliability can be improved.
- the process efficiency is improved and a new package structure is presented, which is advantageous in that the manufacturing cost can be reduced and the manufacturing yield can be improved.
- the semiconductor device package according to the embodiment has an advantage that the reflector can be prevented from being discolored by providing the body with high reflectance, thereby improving the reliability of the semiconductor device package.
- the semiconductor device package and the method for manufacturing a semiconductor device it is possible to prevent the re-melting phenomenon from occurring in the bonding area of the semiconductor device package in the process of re-bonding the semiconductor device package to the substrate .
- FIG. 1 is a plan view of a light emitting device package according to an embodiment of the present invention.
- FIG. 2 is a bottom view of the light emitting device package shown in FIG.
- FIG. 3 is a cross-sectional view taken along line D-D of the light emitting device package shown in FIG.
- FIGS. 4 to 8 are views illustrating a method of manufacturing a light emitting device package according to an embodiment of the present invention.
- 9 to 11 are views for explaining a modification of the body applied to the light emitting device package shown in FIG.
- FIG. 12 to 14 are views for explaining another modification of the body applied to the light emitting device package shown in FIG.
- FIG. 18 is a view showing another example of the light emitting device package according to the embodiment of the present invention.
- FIG. 19 is a view for explaining the arrangement relationship of the first frame, the second frame, and the body applied to the light emitting device package shown in FIG. 18;
- 20 is a view showing another example of the light emitting device package according to the embodiment of the present invention.
- 21 is a view showing another example of the light emitting device package according to the embodiment of the present invention.
- 22 is a view showing another example of the light emitting device package according to the embodiment of the present invention.
- FIG. 23 is a view showing another example of the light emitting device package according to the embodiment of the present invention.
- 24 is a view showing another example of the light emitting device package according to the embodiment of the present invention.
- 25 to 27 are views for explaining a modified example of the opening portion applied to the light emitting device package according to the embodiment of the present invention.
- FIG. 28 is a plan view showing an example of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.
- FIG. 29 is another cross-sectional view taken along the line A-A of the light emitting device shown in Fig.
- FIGS. 30A and 30B are views illustrating a step of forming a semiconductor layer according to a method of manufacturing a light emitting device according to an embodiment of the present invention.
- FIGS. 31A and 31B are views illustrating a step of forming an ohmic contact layer according to a method of manufacturing a light emitting device according to an embodiment of the present invention.
- 32A and 32B are views illustrating a step of forming a reflective layer according to a method of manufacturing a light emitting device according to an embodiment of the present invention.
- FIGS. 33A and 33B are views for explaining steps of forming a first sub-electrode and a second sub-electrode according to a method of manufacturing a light emitting device according to an embodiment of the present invention.
- FIGS. 34A and 34B are views illustrating a step of forming a protective layer by a method of manufacturing a light emitting device according to an embodiment of the present invention.
- FIGS. 35A and 35B are views illustrating a step of forming a first electrode and a second electrode according to a method of manufacturing a light emitting device according to an embodiment of the present invention.
- each layer (film), area, pattern or structure may be referred to as being “on” or “under” the substrate, each layer Quot; on “ and “ under “ are intended to include both “directly” or “indirectly” do.
- the criteria for the top, bottom, or bottom of each layer will be described with reference to drawings, but the embodiment is not limited thereto.
- FIGS. 1 to 3 a light emitting device package according to an embodiment of the present invention will be described.
- FIG. 1 is a plan view of a light emitting device package according to an embodiment of the present invention
- FIG. 2 is a bottom view of a light emitting device package according to an embodiment of the present invention
- the light emitting device package 100 may include a package body 110 and a light emitting device 120, as shown in FIGS.
- the package body 110 may include a first frame 111 and a second frame 112.
- the first frame 111 and the second frame 112 may be spaced apart from each other.
- the package body 110 may include a body 113.
- the body 113 may be disposed between the first frame 111 and the second frame 112.
- the body 113 may function as an electrode separation line.
- the body 113 may be referred to as an insulating member.
- the body 113 may be disposed on the first frame 111. In addition, the body 113 may be disposed on the second frame 112.
- the body 113 may provide an inclined surface disposed on the first frame 111 and the second frame 112.
- a cavity C may be provided on the first frame 111 and the second frame 112 by an inclined surface of the body 113.
- the package body 110 may be provided with a cavity C, or may be provided with a flat upper surface without a cavity C.
- the body 113 may be formed of a material selected from the group consisting of polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide 9T, silicone, epoxy molding compound, And may be formed of at least one selected from the group including silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al 2 O 3 ), and the like.
- the body 113 may include a high refractive index filler such as TiO 2 and SiO 2 .
- the first frame 111 and the second frame 112 may be provided as an insulating frame.
- the first frame 111 and the second frame 112 can stably provide the structural strength of the package body 110.
- first frame 111 and the second frame 112 may be provided as a conductive frame.
- the first frame 111 and the second frame 112 can stably provide the structural strength of the package body 110 and can be electrically connected to the light emitting device 120.
- first frame 111 and the second frame 112 are formed of an insulating frame and the case of forming a conductive frame will be described later.
- the light emitting device 120 may include a first electrode 121, a second electrode 122, and a semiconductor layer 123.
- the semiconductor layer 123 may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer.
- the first electrode 121 may be electrically connected to the first conductive semiconductor layer.
- the second electrode 122 may be electrically connected to the second conductive semiconductor layer.
- the light emitting device 120 may be disposed on the package body 110.
- the light emitting device 120 may be disposed on the first frame 111 and the second frame 112.
- the light emitting device 120 may be disposed in the cavity C provided by the package body 110.
- the first electrode 121 may be disposed on the lower surface of the light emitting device 120.
- the second electrode 122 may be disposed on the lower surface of the light emitting device 120.
- the first electrode 121 and the second electrode 122 may be spaced apart from each other on the lower surface of the light emitting device 120.
- the first electrode 121 may be disposed on the first frame 111.
- the second electrode 122 may be disposed on the second frame 112.
- the first electrode 121 may be disposed between the semiconductor layer 123 and the first frame 111.
- the second electrode 122 may be disposed between the semiconductor layer 123 and the second frame 112.
- the first electrode 121 and the second electrode 122 may be formed of a metal such as Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Layer or multi-layered using at least one material or alloy selected from the group consisting of Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / .
- a metal such as Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Layer or multi-layered using at least one material or alloy selected from the group consisting of Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / .
- the light emitting device package 100 may include a first opening portion TH1 and a second opening portion TH2, as shown in FIGS.
- the first frame 111 may include the first opening TH1.
- the second frame 112 may include the second opening TH2.
- the first opening (TH1) may be provided in the first frame (111).
- the first opening (TH1) may be provided through the first frame (111).
- the first opening TH1 may be provided through the upper surface and the lower surface of the first frame 111 in a first direction.
- the first opening TH1 may be disposed under the first electrode 121 of the light emitting device 120. [ The first opening TH1 may be provided so as to overlap with the first electrode 121 of the light emitting device 120. [ The first opening TH1 may be provided in a superimposed manner with the first electrode 121 of the light emitting device 120 in a first direction toward the lower surface from the upper surface of the first frame 111. [
- the second opening (TH2) may be provided in the second frame (112).
- the second opening (TH2) may be provided through the second frame (112).
- the second opening portion TH2 may be provided through the upper surface and the lower surface of the second frame 112 in a first direction.
- the second opening TH2 may be disposed under the second electrode 122 of the light emitting device 120.
- the second opening TH2 may be provided in a superimposed manner with the second electrode 122 of the light emitting device 120.
- the second opening portion TH2 may be provided in a manner overlapping with the second electrode 122 of the light emitting device 120 in a first direction toward the bottom surface from the top surface of the second frame 112.
- the width W1 of the upper region of the first opening TH1 may be less than or equal to the width of the first electrode 121.
- the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the second electrode 122.
- the first electrode 121 of the light emitting device 120 and the first frame 111 can be more firmly attached.
- the second electrode 122 of the light emitting device 120 and the second frame 112 can be more firmly attached.
- the distance W6 from the upper region of the second opening TH2 to the side end of the second electrode 122 may be several tens of micrometers.
- the distance W6 from the upper area of the second opening TH2 to the side end of the second electrode 122 may be 40 to 60 micrometers.
- the distance W6 is 40 micrometers or more. Also, when the distance W6 is 60 micrometers or less, the area of the second electrode 122 exposed to the second opening portion TH2 can be secured, and the area exposed by the second opening portion TH2 The resistance of the second electrode 122 can be lowered and current injection into the second electrode 122 exposed by the second opening portion TH2 can be smoothly performed.
- the width W1 of the upper region of the first opening TH1 may be less than or equal to the width W2 of the lower region of the first opening TH1.
- the width of the upper area of the second opening TH2 may be smaller than or equal to the width of the lower area of the second opening TH2.
- the first opening TH1 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region.
- the second opening portion TH2 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region.
- the inclined surfaces between the upper and lower regions of the first and second openings TH1 and TH2 may have a plurality of inclined surfaces having different slopes and the inclined surfaces may be arranged with a curvature .
- the width W3 between the first opening TH1 and the second opening TH2 in the lower surface region of the first frame 111 and the second frame 112 may be several hundred micrometers.
- the width W3 between the first opening portion TH1 and the second opening portion TH2 in the lower surface region of the first frame 111 and the second frame portion 112 is set to be, for example, 100 micrometers to 150 micrometers Lt; / RTI >
- the width W3 between the first opening portion TH1 and the second opening portion TH2 in the lower surface region of the first frame 111 and the second frame 112 is set to be larger than the width W3 of the light emitting device package 100 may be selected to be provided over a certain distance in order to prevent electric short between the pads when they are mounted on a circuit board, a submount, or the like.
- the light emitting device package 100 may include an adhesive 130.
- the adhesive 130 may be disposed between the body 113 and the light emitting device 120.
- the adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120.
- the light emitting device package 100 may include a recess R, as shown in FIGS.
- the recesses R may be provided in the body 113.
- the recess R may be provided between the first opening TH1 and the second opening TH2.
- the recess (R) may be recessed in a downward direction from an upper surface of the body (113).
- the recess R may be disposed below the light emitting device 120.
- the recess R may be provided to overlap with the light emitting device 120 in the first direction.
- the adhesive 130 may be disposed in the recess R.
- the adhesive 130 may be disposed between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed between the first electrode 121 and the second electrode 122.
- the adhesive 130 may be disposed in contact with a side surface of the first electrode 121 and a side surface of the second electrode 122.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed, for example, in direct contact with the upper surface of the body 113.
- the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120.
- the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material . Also, as an example, if the adhesive 130 comprises a reflective function, the adhesive may comprise a white silicone.
- the adhesive 130 may provide a stable clamping force between the body 113 and the light emitting device 120. When the light is emitted to the lower surface of the light emitting device 120, It is possible to provide a light diffusion function between the bodies 113. [ When the light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the adhesive 130 may improve the light extraction efficiency of the light emitting device package 100 by providing a light diffusion function. In addition, the adhesive 130 may reflect light emitted from the light emitting device 120. When the adhesive 130 includes a reflection function, the adhesive 130 may be composed of a material including TiO 2, Silicone, and the like.
- the depth T1 of the recess R may be smaller than the depth T2 of the first opening TH1 or the depth T2 of the second opening TH2.
- the depth T1 of the recess R may be determined in consideration of the adhesive force of the adhesive 130.
- the depth T1 of the recess R may be determined by taking into consideration the stable strength of the body 113 and / or by applying heat to the light emitting device package 100 by heat emitted from the light emitting device 120. [ Can be determined not to occur.
- the recess R may provide a suitable space under which an under-fill process may be performed under the light emitting device 120.
- the underfilling process may be a process of mounting the light emitting device 120 on the package body 110 and disposing the adhesive 130 under the light emitting device 120, 120 may be arranged in the recess R to be mounted on the package body 110 through the adhesive 130 after the adhesive 130 is mounted on the package body 110, have.
- the recess R may be provided at a depth greater than the first depth so that the adhesive 130 may be sufficiently provided between the lower surface of the light emitting device 120 and the upper surface of the body 113.
- the recesses R may be provided at a second depth or less to provide stable strength of the body 113.
- the depth (T1) and the width (W4) of the recess (R) can affect the forming position and fixing force of the adhesive (130).
- the depth T1 and the width W4 of the recess R may be determined so that a sufficient fixing force can be provided by the adhesive 130 disposed between the body 113 and the light emitting device 120 .
- the depth (T1) of the recess (R) may be provided by several tens of micrometers.
- the depth (T1) of the recess (R) may be provided from 40 micrometers to 60 micrometers.
- the width W4 of the recess R may be several tens of micrometers to several hundreds of micrometers.
- the width W4 of the recess R may be provided in the major axis direction of the light emitting device 120.
- the width W 4 of the recess R may be narrower than the gap between the first electrode 121 and the second electrode 122.
- the width W4 of the recess R may be provided in the range of 140 micrometers to 160 micrometers.
- the width W4 of the recess R may be provided at 150 micrometers.
- the depth T2 of the first opening TH1 may be provided corresponding to the thickness of the first frame 111. [ The depth T2 of the first opening TH1 may be provided to a thickness sufficient to maintain a stable strength of the first frame 111. [
- the depth T2 of the second opening portion TH2 may be provided corresponding to the thickness of the second frame 112. [ The depth T2 of the second opening portion TH2 may be provided to a thickness that can maintain stable strength of the second frame 112.
- the depth T2 of the first opening TH1 and the depth T2 of the second opening TH2 may be provided corresponding to the thickness of the body 113. [ The depth T2 of the first opening portion TH1 and the depth T2 of the second opening portion TH2 may be provided to maintain a stable strength of the body 113. [
- the depth T2 of the first opening TH1 may be several hundred micrometers.
- the depth T2 of the first opening TH1 may be 180 to 220 micrometers.
- the depth T2 of the first opening TH1 may be 200 micrometers.
- the thickness of (T2-T1) may be selected to be at least 100 micrometers or more. This is in consideration of the thickness of the injection process capable of providing crack free of the body 113.
- the ratio of the T1 thickness to the T2 thickness may be 2 to 10.
- the thickness of T2 may be provided from 20 micrometers to 100 micrometers.
- the light emitting device package 100 may include a molding part 140, as shown in FIGS.
- the molding part 140 may be provided on the light emitting device 120.
- the molding part 140 may be disposed on the first frame 111 and the second frame 112.
- the molding part 140 may be disposed in the cavity C provided by the package body 110.
- the molding part 140 may include an insulating material.
- the molding unit 140 may include wavelength conversion means for receiving light emitted from the light emitting device 120 and providing wavelength-converted light.
- the molding unit 140 may include at least one selected from the group including phosphors, quantum dots, and the like.
- the light emitting device package 100 may include a first conductive layer 321 and a second conductive layer 322.
- the first conductive layer 321 may be spaced apart from the second conductive layer 322.
- the first conductive layer 321 may be provided in the first opening TH1.
- the first conductive layer 321 may be disposed below the first electrode 121.
- the width of the first conductive layer 321 may be smaller than the width of the first electrode 121.
- the first electrode 121 may have a width in a second direction perpendicular to the first direction in which the first opening portion TH1 is formed.
- the width of the first electrode 121 may be greater than the width of the first opening TH1 in the second direction.
- the first conductive layer 321 may be disposed in direct contact with the lower surface of the first electrode 121.
- the first conductive layer 321 may be electrically connected to the first electrode 121.
- the first conductive layer 321 may be surrounded by the first frame 111.
- the second conductive layer 322 may be provided in the second opening TH2.
- the second conductive layer 322 may be disposed under the second electrode 122.
- the width of the second conductive layer 322 may be smaller than the width of the second electrode 122.
- the second electrode 122 may have a width in a second direction perpendicular to the first direction in which the second opening portion TH2 is formed.
- the width of the second electrode 122 may be greater than the width of the second opening TH2 in the second direction.
- the second conductive layer 322 may be disposed in direct contact with the lower surface of the second electrode 122.
- the second conductive layer 322 may be electrically connected to the second electrode 122.
- the second conductive layer 322 may be surrounded by the second frame 112.
- the first conductive layer 321 and the second conductive layer 322 may include one selected from the group consisting of Ag, Au, Pt, and the like, or an alloy thereof. However, the present invention is not limited thereto, and the first conductive layer 321 and the second conductive layer 322 may be formed of a material capable of ensuring a conductive function.
- the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste.
- the conductive paste may include a solder paste, a silver paste, or the like, and may be composed of a multi-layer or an alloy composed of different materials or a single layer.
- the light emitting device package 100 may include a first lower recess R10 and a second lower recess R20.
- the first lower recess R10 and the second lower recess R20 may be spaced apart from each other.
- the first lower recess (R10) may be provided on the lower surface of the first frame (111).
- the first lower recess R10 may be concave in the upper surface direction on the lower surface of the first frame 111.
- the first lower recess R10 may be spaced apart from the first opening TH1.
- the first lower recess R10 may be provided in a width of several micrometers to several tens of micrometers.
- a resin part may be provided in the first lower recess R10.
- the resin portion filled in the first lower recess R10 may be provided with the same material as the body 113, for example.
- a resin part filled in the first lower recess R10 may be provided in the process of forming the first frame 111, the second frame 112, and the body 113 through an injection process or the like .
- the resin part filled in the first lower recess R10 may be disposed around the lower surface area of the first frame 111 providing the first opening TH1.
- the lower surface of the first frame 111 providing the first opening TH1 may be disposed in a shape of an island in a state separated from a lower surface of the first frame 111 surrounding the first frame 111.
- the lower surface of the first frame 111 providing the first opening TH1 is divided into a resin portion filled in the first lower recess R10 and a lower portion of the body 113
- the second frame 111 may be isolated from the surrounding first frame 111.
- the resin part may be formed of a material having poor adhesion to the first and second conductive layers 321 and 322, a poor wettability, or a material having a low surface tension between the resin part and the first and second conductive layers 321 and 322
- the first conductive layer 321 provided in the first opening TH1 is displaced from the first opening TH1 and the resin part filled in the first lower recess R10 or the body 113, Can be prevented from spreading beyond.
- the material of the first conductive layer 321 may be selected to have a good adhesion property with the first frame 111.
- the material of the first conductive layer 321 may be selected to have poor adhesion properties with the resin and the body 113.
- the first conductive layer 321 may flow over the first opening TH1 in the direction of the region where the resin or the body 113 is provided so that the resin or the body 113 And the first conductive layer 321 can be stably disposed in the region provided with the first opening TH1.
- the first conductive layer 321 disposed in the first opening TH1 overflows, the first conductive layer 321 is electrically connected to the outer region of the first lower recess R10 provided with the resin or the body 113, The conductive layer 321 can be prevented from expanding.
- the first conductive layer 321 can be stably connected to the lower surface of the first electrode 121 in the first opening TH1.
- the first conductive layer 321 and the second conductive layer 322 can be prevented from being in contact with each other to be short-circuited, and the first and second conductive layers 321 and 322 can be controlled, the amount of the first and second conductive layers 321 and 322 can be very easily controlled.
- the first conductive layer 321 may extend from the first opening TH1 to the first lower recess R10. Therefore, the first conductive layer 321 and / or the resin portion may be disposed in the first lower recess R10.
- the second lower recess R20 may be provided on a lower surface of the second frame 112.
- the second lower recess R20 may be concave on the lower surface of the second frame 112 in the upper surface direction.
- the second lower recess R20 may be spaced apart from the second opening TH2.
- the second lower recess R20 may be provided with a width of several micrometers to several tens of micrometers.
- a resin part may be provided in the second lower recess R20.
- the resin portion filled in the second lower recess R20 may be provided with the same material as the body 113, for example.
- the present invention is not limited thereto, and the resin part may be selected from materials having poor adhesive force and wettability with the first and second conductive layers 321 and 322.
- the resin portion may be selected and provided from a material having a low surface tension with respect to the first and second conductive layers 321 and 322.
- a resin part filled in the second lower recess R20 may be provided in the process of forming the first frame 111, the second frame 112, and the body 113 through an injection process or the like .
- the resin portion filled in the second lower recess R20 may be disposed around the lower surface area of the second frame 112 that provides the second opening TH2.
- the lower surface of the second frame 112 providing the second opening TH2 may be disposed in a form of an island in a shape separated from the lower surface of the second frame 112 surrounding the second frame 112.
- the lower surface of the second frame 112, which provides the second opening TH2 has a resin portion filled in the second lower recess R20 and a lower portion of the body 113 May be isolated from the second frame 112 in the vicinity.
- the resin part may be formed of a material having poor adhesion to the first and second conductive layers 321 and 322, a poor wettability, or a material having a low surface tension between the resin part and the first and second conductive layers 321 and 322
- the second conductive layer 322 provided in the second opening TH2 may be displaced from the second opening TH2 so that the resin portion or the body 113 filled in the second lower recess R20, Can be prevented from spreading beyond.
- the material of the second conductive layer 322 may be selected to have good adhesion properties with the second frame 112.
- the material constituting the second conductive layer 322 may be selected to have poor adhesion properties with the resin part and the body 113.
- the second conductive layer 322 overflows from the second opening TH2 in the direction of the region where the resin or the body 113 is provided so that the resin or the body 113 And the second conductive layer 322 can be stably disposed in the region where the second opening portion TH2 is provided.
- the second conductive layer 322 disposed in the second opening TH2 overflows, the second conductive layer 322 is electrically connected to the outside region of the second lower recess R20 provided with the resin or the body 113, The conductive layer 322 can be prevented from expanding.
- the second conductive layer 322 can be stably connected to the lower surface of the second electrode 122 in the second opening portion TH2.
- the first conductive layer 321 and the second conductive layer 322 can be prevented from being in contact with each other to be short-circuited, and the first and second conductive layers 321 and 322 can be controlled, the amount of the first and second conductive layers 321 and 322 can be very easily controlled.
- the second conductive layer 322 may extend from the second opening TH2 to the second lower recess R20. Therefore, the second conductive layer 321 and / or the resin portion may be disposed in the second lower recess R20.
- the light emitting device package 100 may include the resin part 135 as shown in FIG.
- the resin part 135 and the molding part 135 are formed in a manner so that the arrangement relationship of the first frame 111, the second frame 112, (140) are not shown.
- the resin part 135 may be disposed between the first frame 111 and the light emitting device 120.
- the resin part 135 may be disposed between the second frame 112 and the light emitting device 120.
- the resin part 135 may be provided on the bottom surface of the cavity C provided in the package body 110.
- the resin part 135 may be disposed on a side surface of the first electrode 121.
- the resin part 135 may be disposed on a side surface of the second electrode 122.
- the resin part 135 may be disposed under the semiconductor layer 123.
- the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicone-based material have.
- the resin part 135 may be a reflecting part that reflects light emitted from the light emitting device 120, and may be a resin including a reflective material such as TiO 2 or a white silicone. .
- the resin part 135 may be disposed below the light emitting device 120 to perform a sealing function. In addition, the resin part 135 can improve adhesion between the light emitting device 120 and the first frame 111. The resin part 135 can improve the adhesion between the light emitting device 120 and the second frame 112.
- the resin part 135 may seal the periphery of the first electrode 121 and the second electrode 122.
- the resin part 135 may be formed on the light emitting device 120 such that the first conductive layer 321 and the second conductive layer 322 are out of the first opening area TH1 and the second opening area TH2, And can be prevented from being diffused and moved outwardly.
- the first and second conductive layers 321 and 322 are diffused and moved in the outer surface direction of the light emitting device 120, the first and second conductive layers 321 and 322 are electrically connected to the active layer of the light emitting device 120 Which can lead to failure due to a short circuit. Accordingly, when the resin part 135 is disposed, the first and second conductive layers 321 and 322 and the active layer can be prevented from being short-circuited, thereby improving the reliability of the light emitting device package according to the embodiment.
- the resin part 135 may reflect light emitted from the light emitting element 120 toward the upper part of the package body 110 The light extraction efficiency of the light emitting device package 100 can be improved.
- the resin part 135 is not provided separately, and the molding part 140 is formed between the first frame 111 and the second frame 112, respectively.
- the semiconductor layer 123 may be provided as a compound semiconductor.
- the semiconductor layer 123 may be formed of, for example, a Group 2-VI-VI or Group III-V compound semiconductor.
- the semiconductor layer 123 may include at least two elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As) .
- the semiconductor layer 123 may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.
- the first and second conductivity type semiconductor layers may be formed of at least one of Group III-V-Vs or Group V-VIs compound semiconductors.
- the first and second conductivity type semiconductor layers are formed of a semiconductor material having a composition formula of In x Al y Ga 1-xy N (0? X? 1, 0? Y? 1, 0? X + y? .
- the first and second conductive semiconductor layers may include at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, .
- the first conductive semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se or Te.
- the second conductive semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr or Ba.
- the active layer may be formed of a compound semiconductor.
- the active layer may be implemented, for example, in at least one of Group 3-Group-5 or Group-6-Group compound semiconductors.
- the active layer may include a plurality of alternately arranged well layers and a plurality of barrier layers. In x Al y Ga 1-xy N (0? X? 1, 0 1, 0? X + y? 1).
- the active layer may be selected from the group consisting of InGaN / GaN, GaN / AlGaN, AlGaN / AlGaN, InGaN / InGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, And may include at least one.
- the light emitting device package 100 is connected to the first electrode 121 through the first opening TH1 and the second electrode 122 through the second opening TH2, ) May be connected to the power source.
- a high temperature process such as a reflow process can be applied.
- a re-melting phenomenon occurs in the bonding region between the lead frame and the light emitting device provided in the light emitting device package, so that the stability of electrical connection and physical coupling can be weakened.
- the first electrode and the second electrode of the light emitting device according to the embodiment can receive driving power through the conductive layer disposed in the opening.
- the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material.
- the selection range for the material constituting the body 113 can be widened.
- the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.
- the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.
- PPA PolyPhtalAmide
- PCT PolyCyclohexylenedimethylene Terephthalate
- EMC Epoxy Molding Compound
- FIGS. 4 to 8 a method of manufacturing a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3.
- FIG. 4 to 8 a method of manufacturing a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3.
- FIG. 4 to 8 a method of manufacturing a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3.
- a method of fabricating a light emitting device package may include providing a package body 110.
- the package body 110 may include a first frame 111 and a second frame 112.
- the first frame 111 and the second frame 112 may be spaced apart from each other.
- the body 113 may be disposed on the first frame 111. In addition, the body 113 may be disposed on the second frame 112.
- the body 113 may provide an inclined surface disposed on the first frame 111 and the second frame 112.
- a cavity C may be provided on the first frame 111 and the second frame 112 by an inclined surface of the body 113.
- first frame 111 may include a first opening TH1.
- second frame 112 may include a second opening TH2.
- the first opening (TH1) may be provided in the first frame (111).
- the first opening (TH1) may be provided through the first frame (111).
- the first opening TH1 may be provided through the upper surface and the lower surface of the first frame 111 in a first direction.
- the second opening (TH2) may be provided in the second frame (112).
- the second opening (TH2) may be provided through the second frame (112).
- the second opening portion TH2 may be provided through the upper surface and the lower surface of the second frame 112 in a first direction.
- the package body 110 may include a recess R provided in the body 113.
- the recesses R may be provided in the body 113.
- the recess R may be provided between the first opening TH1 and the second opening TH2.
- the recess (R) may be recessed in a downward direction from an upper surface of the body (113).
- the adhesive 130 may be provided to the recess region through a dotting method or the like.
- the adhesive 130 may be provided in a region where the recess R is formed, and may be provided to overflow the recess R.
- the length L2 of the recess R may be larger than the length L1 of the second opening TH2 as shown in FIG.
- the length L1 of the second opening TH2 may be smaller than the length of the light emitting device 120 in the minor axis direction.
- the length L2 of the recess R may be larger than the length of the light emitting device 120 in the minor axis direction.
- the adhesive 130 provided under the light emitting device 120 may contact the light emitting device 120 120, the overflowing portion can be moved in the direction of the length L2 of the recess R. Accordingly, even when the amount of the adhesive 130 is greater than that of the design, the light emitting device 120 can be stably fixed without lifting from the body 113.
- the light emitting device 120 may be provided on the package body 110.
- the light emitting device 120 may be provided on the package body 110.
- the recess R may be used as an align key in the process of disposing the light emitting device 120 on the package body 110.
- the light emitting device 120 may be fixed to the body 113 by the adhesive 130. A part of the adhesive 130 provided in the recess R may be moved in the direction of the first electrode 121 and the second electrode 122 of the light emitting device 120 to be cured.
- the adhesive 130 may be provided over a wide area between the lower surface of the light emitting device 120 and the upper surface of the body 113, and the fixing force between the light emitting device 120 and the body 113 .
- the first opening TH1 may be disposed under the first electrode 121 of the light emitting device 120.
- the first opening TH1 may be provided so as to overlap with the first electrode 121 of the light emitting device 120.
- the first opening TH1 may be provided in a superimposed manner with the first electrode 121 of the light emitting device 120 in a first direction toward the lower surface from the upper surface of the first frame 111.
- a first conductive layer 321 and a second conductive layer 322 may be formed. Referring to FIG. 6
- the lower surface of the first electrode 121 may be exposed through the first opening portion TH1.
- the lower surface of the second electrode 122 may be exposed through the second opening TH2.
- the first conductive layer 321 may be formed in the first opening TH1.
- the second conductive layer 322 may be formed in the second opening portion TH2.
- the first conductive layer 321 may be provided in the first opening TH1.
- the first conductive layer 321 may be disposed below the first electrode 121.
- the width of the first conductive layer 321 may be smaller than the width of the first electrode 121.
- the first conductive layer 321 may be disposed in direct contact with the lower surface of the first electrode 121.
- the first conductive layer 321 may be electrically connected to the first electrode 121.
- the first conductive layer 321 may be surrounded by the first frame 111.
- the second conductive layer 322 may be provided in the second opening TH2.
- the second conductive layer 322 may be disposed under the second electrode 122.
- the width of the second conductive layer 322 may be smaller than the width of the second electrode 122.
- the second conductive layer 322 may be disposed in direct contact with the lower surface of the second electrode 122.
- the second conductive layer 322 may be electrically connected to the second electrode 122.
- the second conductive layer 322 may be surrounded by the second frame 112.
- first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste.
- the first conductive layer 321 and the second conductive layer 322 may be formed of solder paste or silver paste.
- a resin part 135 can be formed.
- the resin part 135 may be disposed between the first frame 111 and the light emitting device 120, as described with reference to FIG.
- the resin part 135 may be disposed between the second frame 112 and the light emitting device 120.
- the resin part 135 may be disposed on a side surface of the first electrode 121.
- the resin part 135 may be disposed on a side surface of the second electrode 122.
- the resin part 135 may be disposed under the semiconductor layer 123.
- the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicone-based material have.
- the resin part 135 may be a reflection part that reflects light emitted from the light emitting device 120, and may be a resin including a reflective material such as TiO 2 .
- the resin part 135 may include white silicone.
- the resin part 135 may be disposed below the light emitting device 120 to perform a sealing function. In addition, the resin part 135 can improve adhesion between the light emitting device 120 and the first frame 111. The resin part 135 can improve the adhesion between the light emitting device 120 and the second frame 112.
- the resin part 135 may reflect light emitted from the light emitting element 120 toward the upper part of the package body 110 The light extraction efficiency of the light emitting device package 100 can be improved.
- a molding part 140 may be provided on the light emitting device 120 as shown in FIG.
- the molding part 140 may be provided on the light emitting device 120.
- the molding part 140 may be disposed on the first frame 111 and the second frame 112.
- the molding part 140 may be disposed in the cavity C provided by the package body 110.
- the molding part 140 may be disposed on the resin part 135.
- the molding part 140 may include an insulating material.
- the molding unit 140 may include wavelength conversion means for receiving light emitted from the light emitting device 120 and providing wavelength-converted light.
- the molding unit 140 may include at least one selected from the group including phosphors, quantum dots, and the like.
- the first conductive layer 321 and the second conductive layer 322 are formed first, as shown in FIG. 6, and the resin part 135 ) And the molding part 140 are formed on the substrate.
- the resin part 135 and the molding part 140 are formed first, and the first conductive layer 321 and the second conductive layer 322 may be formed behind.
- only the molding part 140 may be formed in the cavity of the package body 110 without forming the resin part 135.
- the light emitting device package 100 is connected to the first electrode 121 through the first opening TH1 and the second electrode 122 through the second opening TH2, ) May be connected to the power source.
- the light emitting device 120 can be driven by the driving power supplied through the first electrode 121 and the second electrode 122.
- the light emitted from the light emitting device 120 may be provided in an upward direction of the package body 110.
- the light emitting device package 100 may be mounted on a submount, a circuit board, or the like.
- a high temperature process such as a reflow process can be applied.
- re-melting phenomenon occurs in the bonding region between the frame and the light emitting device provided in the light emitting device package, so that the stability of electrical connection and physical coupling can be weakened, And the optical and electrical characteristics and reliability of the light emitting device package may be deteriorated.
- the first electrode and the second electrode of the light emitting device according to the embodiment can receive driving power through the conductive layer disposed in the opening.
- the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material.
- the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.
- the selection range for the material constituting the body 113 can be widened.
- the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.
- the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.
- PPA PolyPhtalAmide
- PCT PolyCyclohexylenedimethylene Terephthalate
- EMC Epoxy Molding Compound
- 9 to 11 are views for explaining a modification of the body applied to the light emitting device package shown in FIG.
- the body 113 may include at least two recesses provided on the upper surface.
- the body 113 may include a first recess R11 disposed on the first frame 111 side from a top surface central region.
- the first recess R11 may be provided in contact with the end of the first frame 111.
- the body 113 may include a second recess R12 disposed on the second frame 112 side from the upper center region.
- the second recess R12 may be provided in contact with the end of the second frame 112.
- the first recess R11 may be concave downward from the upper surface of the body 113 and the upper surface of the first frame 111.
- the second recess R12 may be recessed downward from the upper surface of the body 113 and the upper surface of the second frame 112.
- the first recess R11 and the second recess R12 may be formed between the lower surface of the light emitting device 120 and the upper surface of the body 113 so that the adhesive 130 may be sufficiently provided. Or more.
- the first recess R11 and the second recess R12 may be provided at a second depth or less to provide a stable strength of the body 113.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed, for example, in direct contact with the upper surface of the body 113.
- the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120.
- the first recess R11 and the adhesive 130 may prevent the first conductive layer 321 provided in the first opening TH1 from moving to a region under the light emitting device 120 have.
- the second recess R12 and the adhesive 130 may prevent the second conductive layer 322 provided in the second opening TH2 from moving to a region below the light emitting device 120 have. Accordingly, it is possible to prevent the light emitting device 120 from being electrically short-circuited or deteriorated by the movement of the first conductive layer 321 or the movement of the second conductive layer 322.
- FIG. 9 is a cross-sectional view of a body 113 applied to a light emitting device package according to an embodiment
- FIGS. 10 and 11 are plan views of the body 113 shown in FIG.
- the first recess R11 and the second recess R12 may be spaced apart from each other with a central region of the body 113 interposed therebetween.
- the first recess R11 and the second recess R12 may be disposed parallel to each other with a central region of the body 113 interposed therebetween.
- the first recess R11 and the second recess R12 may be spaced apart from each other with a central region of the body 113 interposed therebetween.
- the first recess R11 and the second recess R12 may be arranged in a closed loop around the central region of the body 113.
- FIG. 12 to 14 are views for explaining another modification of the body applied to the light emitting device package shown in FIG.
- the body 113 may include at least three recesses provided on the upper surface.
- the body 113 may include a first recess R21 disposed on the first frame 111 side from a top center region.
- the first recess R21 may be recessed from the upper surface of the body 113 in a downward direction.
- the body 113 may include a third recess R23 disposed on the second frame 112 side from the upper center region.
- the third recess R23 may be recessed from the upper surface of the body 113 in a downward direction.
- the body 113 may include a second recess R22 disposed in a central region of the upper surface.
- the second recess R22 may be recessed from the upper surface of the body 113 in a downward direction.
- the second recess R22 may be disposed between the first recess R21 and the third recess R23.
- the adhesive 130 may be provided to the first recess R21, the second recess R22, and the third recess R23.
- the adhesive 130 may be disposed between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed between the first electrode 121 and the second electrode 122.
- the adhesive 130 may be disposed in contact with a side surface of the first electrode 121 and a side surface of the second electrode 122.
- the first recess R21, the second recess R22 and the third recess R23 may be formed on the lower surface of the light emitting device 120 to attach the light emitting device 120 to the package body. It is possible to provide a proper space in which the under fill process can be performed.
- the first recess R21, the second recess R22 and the third recess R23 are formed between the lower surface of the light emitting device 120 and the upper surface of the body 113, May be provided at a first depth or more so that a sufficient depth can be provided.
- the first recess R21, the second recess R22 and the third recess R23 may be provided at a second depth or less to provide a stable strength of the body 113 .
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed, for example, in direct contact with the upper surface of the body 113.
- the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120.
- the first recess R21 and the adhesive 130 may prevent the first conductive layer 321 provided in the first opening TH1 from being moved to a region below the light emitting device 120 have.
- the third recess R23 and the adhesive 130 may prevent the second conductive layer 322 provided in the second opening TH2 from being moved to a region below the light emitting device 120 have. Accordingly, it is possible to prevent the light emitting device 120 from being electrically short-circuited or deteriorated by the movement of the first conductive layer 321 or the movement of the second conductive layer 322.
- FIG. 12 is a cross-sectional view of a body 113 applied to a light emitting device package according to an embodiment
- FIGS. 13 and 14 are plan views of the body 113 shown in FIG.
- the first recess R21, the second recess R22, and the third recess R23 are spaced apart from each other on the upper surface of the body 113, As shown in Fig.
- the first recess R21, the second recess R22 and the third recess R23 may extend in one direction on the upper surface of the body 113.
- the first recess R21 and the third recess R23 may be spaced apart from each other with a central region of the body 113 interposed therebetween.
- the first recess R21 and the third recess R23 may be disposed in a closed loop around the central region of the body 113.
- the second recess R22 may be disposed in a central region of the body 113.
- the second recess R22 may be disposed in a space surrounded by the first recess R21 and the third recess R23.
- 15 to 17 are views for explaining another modification of the body applied to the light emitting device package shown in FIG.
- the body 113 may include a first recess R31 disposed on the first frame 111 side from a top surface center region.
- the first recess R31 may be recessed from the upper surface of the body 113 in a downward direction.
- the first recess R31 may be spaced apart from the end of the first frame 111.
- the body 113 may include a second recess R32 disposed on the second frame 112 side from the upper center region.
- the second recess R32 may be recessed from the upper surface of the body 113 in a downward direction.
- the second recess R32 may be spaced apart from the end of the second frame 112.
- the adhesive 130 can be provided to the first recess R31 and the second recess R32.
- the adhesive 130 may be disposed between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed between the first electrode 121 and the second electrode 122.
- the adhesive 130 may be disposed in contact with a side surface of the first electrode 121 and a side surface of the second electrode 122.
- the first recess R31 and the second recess R32 may provide a proper space in which an underfill process may be performed under the light emitting device 120.
- the first recess R31 and the second recess R32 may be formed between the lower surface of the light emitting device 120 and the upper surface of the body 113 so that the adhesive 130 may be sufficiently provided, Or more.
- the first recess R31 and the second recess R32 may be provided at a second depth or less to provide a stable strength of the body 113.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed, for example, in direct contact with the upper surface of the body 113.
- the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120.
- the first recess R31 and the adhesive 130 may prevent the first conductive layer 321 provided in the first opening TH1 from being moved to a region below the light emitting device 120 have.
- the second recess R32 and the adhesive 130 may prevent the second conductive layer 322 provided in the second opening TH2 from being moved to a region below the light emitting device 120 have. Accordingly, it is possible to prevent the light emitting device 120 from being electrically short-circuited or deteriorated by the movement of the first conductive layer 321 or the movement of the second conductive layer 322.
- FIG. 15 is a cross-sectional view of a body 113 applied to a light emitting device package according to an embodiment
- FIGS. 16 and 17 are plan views of the body 113 shown in FIG.
- first recess R31 and the second recess R32 may be spaced apart from each other on the upper surface of the body 113 and disposed in parallel in one direction.
- the first recess R31 and the second recess R32 may extend from the upper surface of the body 113 in one direction.
- the first recess R31 and the second recess R32 may be spaced apart from each other with a central region of the body 113 interposed therebetween.
- the first recess R31 and the second recess R32 may be disposed in a closed loop around the central region of the body 113.
- FIG. 18 Another example of the light emitting device package according to the embodiment of the present invention will be described with reference to FIGS. 18 and 19.
- FIG. 18 Another example of the light emitting device package according to the embodiment of the present invention will be described with reference to FIGS. 18 and 19.
- FIG. 18 is a view showing another example of the light emitting device package according to the embodiment of the present invention
- FIG. 19 is a view for explaining the arrangement relationship of the first frame, the second frame, and the body applied to the light emitting device package shown in FIG. to be.
- FIGS. 18 and 19 a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 17.
- FIG. 18
- the light emitting device package may include a package body 110 and a light emitting device 120, as shown in FIGS. 18 and 19.
- the package body 110 may include a first frame 111 and a second frame 112.
- the first frame 111 and the second frame 112 may be spaced apart from each other.
- the package body 110 may include a body 113.
- the body 113 may be disposed between the first frame 111 and the second frame 112.
- the body 113 may function as an electrode separation line.
- the first frame 111 and the second frame 112 may be provided as an insulating frame.
- the first frame 111 and the second frame 112 can stably provide the structural strength of the package body 110.
- first frame 111 and the second frame 112 may be provided as a conductive frame.
- the first frame 111 and the second frame 112 can stably provide the structural strength of the package body 110 and can be electrically connected to the light emitting device 120.
- first frame 111 and the second frame 112 are formed of an insulating frame and the case of forming a conductive frame will be described later.
- the body 113 may be formed of a material selected from the group consisting of polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide 9T, silicone, epoxy molding compound, And may be formed of at least one selected from the group including silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al 2 O 3 ), and the like.
- the body 113 may include a high refractive index filler such as TiO 2 and SiO 2 .
- the light emitting device 120 may include a first electrode 121, a second electrode 122, and a semiconductor layer 123.
- the light emitting device 120 may be disposed on the package body 110.
- the light emitting device 120 may be disposed on the first frame 111 and the second frame 112.
- the light emitting device 120 may be disposed in the cavity C provided by the package body 110.
- the first electrode 121 may be disposed on the lower surface of the light emitting device 120.
- the second electrode 122 may be disposed on the lower surface of the light emitting device 120.
- the first electrode 121 and the second electrode 122 may be spaced apart from each other on the lower surface of the light emitting device 120.
- the first electrode 121 may be disposed on the first frame 111.
- the second electrode 122 may be disposed on the second frame 112.
- the first electrode 121 may be disposed between the semiconductor layer 123 and the first frame 111.
- the second electrode 122 may be disposed between the semiconductor layer 123 and the second frame 112.
- the light emitting device package according to the embodiment may include a first opening portion TH1 and a second opening portion TH2, as shown in FIGS. 18 and 19.
- the first frame 111 may include the first opening TH1.
- the second frame 112 may include the second opening TH2.
- the first opening (TH1) may be provided in the first frame (111).
- the first opening (TH1) may be provided through the first frame (111).
- the first opening TH1 may be provided through the upper surface and the lower surface of the first frame 111 in a first direction.
- the first opening TH1 may be disposed under the first electrode 121 of the light emitting device 120. [ The first opening TH1 may be provided so as to overlap with the first electrode 121 of the light emitting device 120. [ The first opening TH1 may be provided in a superimposed manner with the first electrode 121 of the light emitting device 120 in a first direction toward the lower surface from the upper surface of the first frame 111. [
- the second opening (TH2) may be provided in the second frame (112).
- the second opening (TH2) may be provided through the second frame (112).
- the second opening portion TH2 may be provided through the upper surface and the lower surface of the second frame 112 in a first direction.
- the second opening TH2 may be disposed under the second electrode 122 of the light emitting device 120.
- the second opening TH2 may be provided in a superimposed manner with the second electrode 122 of the light emitting device 120.
- the second opening portion TH2 may be provided in a manner overlapping with the second electrode 122 of the light emitting device 120 in a first direction toward the bottom surface from the top surface of the second frame 112.
- the first opening TH1 and the second opening TH2 may be spaced apart from each other.
- the first opening portion TH1 and the second opening portion TH2 may be spaced apart from each other below the lower surface of the light emitting device 120.
- the light emitting device package according to the embodiment may include an adhesive 130.
- the adhesive 130 may be disposed between the body 113 and the light emitting device 120.
- the adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120.
- the light emitting device package according to the embodiment may include a recess (R) as shown in FIGS. 18 and 19.
- the recesses R may be provided in the body 113.
- the recess R may be provided between the first opening TH1 and the second opening TH2.
- the recess (R) may be recessed in a downward direction from an upper surface of the body (113).
- the recess R may be disposed below the light emitting device 120.
- the recess R may be provided to overlap with the light emitting device 120 in the first direction.
- the adhesive 130 may be disposed in the recess R.
- the adhesive 130 may be disposed between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed between the first electrode 121 and the second electrode 122.
- the adhesive 130 may be disposed in contact with a side surface of the first electrode 121 and a side surface of the second electrode 122.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed, for example, in direct contact with the upper surface of the body 113.
- the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120.
- the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material .
- the adhesive 130 may comprise white silicone.
- the adhesive 130 may provide a stable clamping force between the body 113 and the light emitting device 120. When the light is emitted to the lower surface of the light emitting device 120, It is possible to provide a light diffusion function between the bodies 113. [ When the light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the adhesive 130 may improve the light extraction efficiency of the light emitting device package 100 by providing a light diffusion function.
- the recess R may provide a suitable space under which an under-fill process may be performed under the light emitting device 120.
- the recess R may be provided at a depth greater than the first depth so that the adhesive 130 may be sufficiently provided between the lower surface of the light emitting device 120 and the upper surface of the body 113.
- the recesses R may be provided at a second depth or less to provide stable strength of the body 113.
- the light emitting device package according to the embodiment may include a first conductive layer 321 and a second conductive layer 322.
- the first conductive layer 321 may be spaced apart from the second conductive layer 322.
- the first conductive layer 321 may be provided in the first opening TH1.
- the first conductive layer 321 may be disposed below the first electrode 121.
- the width of the first conductive layer 321 may be smaller than the width of the first electrode 121.
- the first electrode 121 may have a width in a second direction perpendicular to the first direction in which the first opening portion TH1 is formed.
- the width of the first electrode 121 may be greater than the width of the first opening TH1 in the second direction.
- the first conductive layer 321 may be disposed in direct contact with the lower surface of the first electrode 121.
- the first conductive layer 321 may be electrically connected to the first electrode 121.
- the first conductive layer 321 may be surrounded by the first frame 111.
- the second conductive layer 322 may be provided in the second opening TH2.
- the second conductive layer 322 may be disposed under the second electrode 122.
- the width of the second conductive layer 322 may be smaller than the width of the second electrode 122.
- the second electrode 122 may have a width in a second direction perpendicular to the first direction in which the second opening portion TH2 is formed.
- the width of the second electrode 122 may be greater than the width of the second opening TH2 in the second direction.
- the second conductive layer 322 may be disposed in direct contact with the lower surface of the second electrode 122.
- the second conductive layer 322 may be electrically connected to the second electrode 122.
- the second conductive layer 322 may be surrounded by the second frame 112.
- the first conductive layer 321 and the second conductive layer 322 may include one selected from the group consisting of Ag, Au, Pt, and the like, or an alloy thereof. However, the present invention is not limited thereto, and the first conductive layer 321 and the second conductive layer 322 may be formed of a material capable of ensuring a conductive function.
- the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste.
- the conductive paste may include a solder paste, a silver paste, and the like.
- the light emitting device package according to the embodiment may include a first lower recess R10 and a second lower recess R20, as shown in Figs. 18 and 19.
- the first lower recess R10 and the second lower recess R20 may be spaced apart from each other.
- the first lower recess (R10) may be provided on the lower surface of the first frame (111).
- the first lower recess R10 may be concave in the upper surface direction on the lower surface of the first frame 111.
- the first lower recess R10 may be spaced apart from the first opening TH1.
- the first lower recess R10 may be provided in a width of several micrometers to several tens of micrometers.
- a resin part may be provided in the first lower recess R10.
- the resin portion filled in the first lower recess R10 may be provided with the same material as the body 113, for example.
- a resin part filled in the first lower recess R10 may be provided in the process of forming the first frame 111, the second frame 112, and the body 113 through an injection process or the like .
- the resin part filled in the first lower recess R10 may be disposed around the lower surface area of the first frame 111 providing the first opening TH1 as described with reference to FIG. have.
- the lower surface of the first frame 111 providing the first opening TH1 may be disposed in a shape of an island in a state separated from a lower surface of the first frame 111 surrounding the first frame 111.
- the lower surface of the first frame 111 providing the first opening TH1 is divided into a resin portion filled in the first lower recess R10, May be isolated from the first frame (111) in the vicinity by the first frame (113).
- the first conductive layer 321 provided in the first opening TH1 is separated from the first opening TH1 and the resin part or the body 113 filled in the first lower recess R10 It can be prevented from spreading over.
- the first conductive layer 321 is prevented from flowing over the region provided with the resin or the body 113 and the first conductive layer 321 is prevented from flowing over the area provided with the first opening TH1 As shown in Fig.
- the first conductive layer 321 can be stably connected to the lower surface of the first electrode 121 in the first opening TH1.
- the second lower recess R20 may be provided on a lower surface of the second frame 112.
- the second lower recess R20 may be concave on the lower surface of the second frame 112 in the upper surface direction.
- the second lower recess R20 may be spaced apart from the second opening TH2.
- the second lower recess R20 may be provided with a width of several micrometers to several tens of micrometers.
- a resin part may be provided in the second lower recess R20.
- the resin portion filled in the second lower recess R20 may be provided with the same material as the body 113, for example.
- a resin part filled in the second lower recess R20 may be provided in the process of forming the first frame 111, the second frame 112, and the body 113 through an injection process or the like .
- the resin part filled in the second lower recess R20 can be disposed around the lower area of the second frame 112 providing the second opening TH2 as described with reference to Fig. have.
- the lower surface of the second frame 112 providing the second opening TH2 may be disposed in a form of an island in a shape separated from the lower surface of the second frame 112 surrounding the second frame 112.
- the lower surface region of the second frame 112 providing the second opening portion TH2 includes a resin portion filled in the second lower recess R20, May be isolated from the second frame (112) around the first frame (113).
- the second conductive layer 322 provided in the second opening TH2 is moved away from the second opening TH2 and the resin part or the body 113 filled in the second lower recess R20 It can be prevented from spreading over.
- the second conductive layer 322 is prevented from flowing over the region provided with the resin or the body 113 and the second conductive layer 322 is prevented from flowing over the area provided with the second opening TH2, As shown in Fig. In addition, the second conductive layer 322 can be stably connected to the lower surface of the second electrode 122 in the second opening portion TH2.
- the light emitting device package according to the embodiment may include a first upper recess R3 and a second upper recess R4, as shown in Figs. 18 and 19.
- the first upper recess R3 may be provided on the upper surface of the first frame 111. [ The first upper recess R3 may be recessed from the upper surface of the first frame 111 in a downward direction. The first upper recess R3 may be spaced apart from the first opening TH1.
- the first upper recess R3 may be provided adjacent to three sides of the first electrode 121 as viewed in the upper direction, as shown in Fig.
- the first upper recess R3 may be provided in the shape of " ["
- the first upper recess R 3 may be provided so as not to overlap with the first lower recess R 10 in a direction perpendicular to the first lower recess R 10.
- the first upper recesses R3 and the first lower recesses R10 are overlapped with each other in the vertical direction and the thickness of the first frame 111 disposed therebetween is too thin, The strength of one frame 111 can be weakened.
- the first upper recess R 3 and the first lower recess R 10 are provided so as to be overlapped with each other in the vertical direction It is possible.
- the second upper recess R4 may be provided on the upper surface of the second frame 112. [ The second upper recess R4 may be recessed in a downward direction from the upper surface of the second frame 112. [ The second upper recess R4 may be spaced apart from the second opening TH2.
- the second upper recess R4 may be provided so as not to overlap with the second lower recess R20 in a direction perpendicular to the second lower recess R20.
- the second upper recess R4 and the second lower recess R20 are overlapped with each other in the vertical direction and the thickness of the second frame 112 disposed therebetween is too thin, The strength of the two frames 112 can be weakened.
- the second upper recess R4 and the second lower recess R20 are provided so as to be overlapped with each other in the vertical direction It is possible.
- the second upper recess R4 may be provided adjacent to three sides of the second electrode 122 when viewed from the top, as shown in Fig.
- the second upper recess R4 may be provided in the shape of "] " around the second electrode 122.
- first upper recess R3 and the second upper recess R4 may be provided with a width of several tens of micrometers to several hundreds of micrometers.
- the light emitting device package according to the embodiment may include a resin part 135 as shown in FIG.
- the resin part 135 may be provided to the first upper recess R3 and the second upper recess R4.
- the resin part 135 may be disposed on a side surface of the first electrode 121.
- the resin part 135 may be provided to the first upper recess R3 and extended to a region where the first electrode 121 is disposed.
- the resin part 135 may be disposed under the semiconductor layer 123.
- the distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 may be several hundred micrometers or less.
- the distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 may be equal to or less than 200 micrometers.
- the distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 is set to a value equal to the distance L11 between the end of the first upper recess R3 and the tip of the light emitting element 120, .
- the distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 is set such that the resin portion 135 applied to the first upper recess R3 May be selected as a distance that can be extended to a region where one electrode 121 is disposed.
- the resin part 135 may be disposed on a side surface of the second electrode 122.
- the resin part 135 may be provided to the second upper recess R4 and extended to a region where the second electrode 122 is disposed.
- the resin part 135 may be disposed under the semiconductor layer 123.
- the resin part 135 may be provided on the side surface of the semiconductor layer 123. It is possible to effectively prevent the first and second conductive layers 321 and 322 from moving to the side surface of the semiconductor layer 123 by disposing the resin part 135 on the side surface of the semiconductor layer 123. [ When the resin part 135 is disposed on the side surface of the semiconductor layer 123, the resin part 135 can be disposed under the active layer of the semiconductor layer 123, Can be improved.
- the first upper recess R3 and the second upper recess R4 may provide sufficient space for the resin part 135 to be provided.
- the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicone-based material have.
- the resin part 135 may include a reflective material and may include, for example, white silicone including TiO2 and / or Silicone.
- the resin part 135 may be disposed below the light emitting device 120 to perform a sealing function. In addition, the resin part 135 can improve adhesion between the light emitting device 120 and the first frame 111. The resin part 135 can improve the adhesion between the light emitting device 120 and the second frame 112.
- the resin part 135 may seal the periphery of the first electrode 121 and the second electrode 122.
- the resin part 135 may be formed on the light emitting device 120 such that the first conductive layer 321 and the second conductive layer 322 are out of the first opening area TH1 and the second opening area TH2, And can be prevented from being moved.
- the resin part 135 may reflect light emitted from the light emitting element 120 toward the upper part of the package body 110 The light extraction efficiency of the light emitting device package 100 can be improved.
- the light emitting device package according to the embodiment may include a molding part 140.
- the molding part 140 may be provided on the light emitting device 120.
- the molding part 140 may be disposed on the first frame 111 and the second frame 112.
- the molding part 140 may be disposed in the cavity C provided by the package body 110.
- the molding part 140 may be disposed on the resin part 135.
- the light emitting device package 100 is connected to the first electrode 121 through the first opening TH1 and the second electrode 122 through the second opening TH2, ) May be connected to the power source.
- the light emitting device 120 can be driven by the driving power supplied through the first electrode 121 and the second electrode 122.
- the light emitted from the light emitting device 120 may be provided in an upward direction of the package body 110.
- the light emitting device package 100 may be mounted on a submount, a circuit board, or the like.
- a high temperature process such as a reflow process can be applied.
- a re-melting phenomenon occurs in the bonding region between the lead frame and the light emitting device provided in the light emitting device package, so that the stability of electrical connection and physical coupling can be weakened.
- the first electrode and the second electrode of the light emitting device according to the embodiment can receive driving power through the conductive layer disposed in the opening.
- the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material.
- the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.
- the selection range for the material constituting the body 113 can be widened.
- the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.
- the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.
- PPA PolyPhtalAmide
- PCT PolyCyclohexylenedimethylene Terephthalate
- EMC Epoxy Molding Compound
- FIG. 20 a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 19.
- FIG. 20 a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 19.
- FIG. 20 a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 19.
- FIG. 20 a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 19.
- the light emitting device package may include a package body 110 and a light emitting device 120, as shown in FIG.
- the package body 110 may include a first frame 111 and a second frame 112.
- the first frame 111 and the second frame 112 may be spaced apart from each other.
- the package body 110 may include a body 113.
- the body 113 may be disposed between the first frame 111 and the second frame 112.
- the body 113 may function as an electrode separation line.
- first frame 111 and the second frame 112 may be provided as a conductive frame.
- the first frame 111 and the second frame 112 can stably provide the structural strength of the package body 110 and can be electrically connected to the light emitting device 120.
- first frame 111 and the second frame 112 are formed of an insulating frame and the case of forming a conductive frame will be described later.
- the body 113 may be formed of a material selected from the group consisting of polyphthalamide (PPA), polychloro tri phenyl (PCT), liquid crystal polymer (LCP), polyamide 9T, silicone, epoxy molding compound, And may be formed of at least one selected from the group including silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), sapphire (Al 2 O 3 ), and the like.
- the body 113 may include a high refractive index filler such as TiO 2 and SiO 2 .
- the light emitting device 120 may include a first electrode 121, a second electrode 122, and a semiconductor layer 123.
- the light emitting device 120 may be disposed on the package body 110.
- the light emitting device 120 may be disposed on the first frame 111 and the second frame 112.
- the light emitting device 120 may be disposed in the cavity C provided by the package body 110.
- the first electrode 121 may be disposed on the lower surface of the light emitting device 120.
- the second electrode 122 may be disposed on the lower surface of the light emitting device 120.
- the first electrode 121 and the second electrode 122 may be spaced apart from each other on the lower surface of the light emitting device 120.
- the first electrode 121 may be disposed between the semiconductor layer 123 and the first frame 111.
- the second electrode 122 may be disposed between the semiconductor layer 123 and the second frame 112.
- the light emitting device package according to the embodiment may include a first opening portion TH1 and a second opening portion TH2, as shown in FIG.
- the first frame 111 may include the first opening TH1.
- the second frame 112 may include the second opening TH2.
- the first opening (TH1) may be provided in the first frame (111).
- the first opening (TH1) may be provided through the first frame (111).
- the first opening TH1 may be provided through the upper surface and the lower surface of the first frame 111 in a first direction.
- the first opening TH1 may be disposed under the first electrode 121 of the light emitting device 120. [ The first opening TH1 may be provided so as to overlap with the first electrode 121 of the light emitting device 120. [ The first opening TH1 may be provided in a superimposed manner with the first electrode 121 of the light emitting device 120 in a first direction toward the lower surface from the upper surface of the first frame 111. [
- the second opening (TH2) may be provided in the second frame (112).
- the second opening (TH2) may be provided through the second frame (112).
- the second opening portion TH2 may be provided through the upper surface and the lower surface of the second frame 112 in a first direction.
- the second opening TH2 may be disposed under the second electrode 122 of the light emitting device 120.
- the second opening TH2 may be provided in a superimposed manner with the second electrode 122 of the light emitting device 120.
- the second opening portion TH2 may be provided in a manner overlapping with the second electrode 122 of the light emitting device 120 in a first direction toward the bottom surface from the top surface of the second frame 112.
- the first opening TH1 and the second opening TH2 may be spaced apart from each other.
- the first opening portion TH1 and the second opening portion TH2 may be spaced apart from each other below the lower surface of the light emitting device 120.
- the light emitting device package according to the embodiment may include an adhesive 130.
- the adhesive 130 may be disposed between the body 113 and the light emitting device 120.
- the adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120.
- the recesses R may be provided in the body 113.
- the recess R may be provided between the first opening TH1 and the second opening TH2.
- the recess (R) may be recessed in a downward direction from an upper surface of the body (113).
- the recess R may be disposed below the light emitting device 120.
- the recess R may be provided to overlap with the light emitting device 120 in the first direction.
- the adhesive 130 may be disposed in the recess R.
- the adhesive 130 may be disposed between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed between the first electrode 121 and the second electrode 122.
- the adhesive 130 may be disposed in contact with a side surface of the first electrode 121 and a side surface of the second electrode 122.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed, for example, in direct contact with the upper surface of the body 113.
- the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120.
- the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material .
- the adhesive 130 may comprise white silicone.
- the adhesive 130 may provide a stable clamping force between the body 113 and the light emitting device 120. When the light is emitted to the lower surface of the light emitting device 120, It is possible to provide a light diffusion function between the bodies 113. [ When the light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the adhesive 130 may improve the light extraction efficiency of the light emitting device package 100 by providing a light diffusion function.
- the recess R may provide a suitable space under which an under-fill process may be performed under the light emitting device 120.
- the recess R may be provided at a depth greater than the first depth so that the adhesive 130 may be sufficiently provided between the lower surface of the light emitting device 120 and the upper surface of the body 113.
- the recesses R may be provided at a second depth or less to provide stable strength of the body 113.
- the light emitting device package according to the embodiment may include a first conductive layer 321 and a second conductive layer 322.
- the first conductive layer 321 may be spaced apart from the second conductive layer 322.
- the first conductive layer 321 may be provided in the first opening TH1.
- the first conductive layer 321 may be disposed below the first electrode 121.
- the width of the first conductive layer 321 may be smaller than the width of the first electrode 121.
- the first electrode 121 may have a width in a second direction perpendicular to the first direction in which the first opening portion TH1 is formed.
- the width of the first electrode 121 may be greater than the width of the first opening TH1 in the second direction.
- the first conductive layer 321 may be disposed in direct contact with the lower surface of the first electrode 121.
- the first conductive layer 321 may be electrically connected to the first electrode 121.
- the first conductive layer 321 may be surrounded by the first frame 111.
- the second conductive layer 322 may be provided in the second opening TH2.
- the second conductive layer 322 may be disposed under the second electrode 122.
- the width of the second conductive layer 322 may be smaller than the width of the second electrode 122.
- the second electrode 122 may have a width in a second direction perpendicular to the first direction in which the second opening portion TH2 is formed.
- the width of the second electrode 122 may be greater than the width of the second opening TH2 in the second direction.
- the first conductive layer 321 and the second conductive layer 322 may include one selected from the group consisting of Ag, Au, Pt, and the like, or an alloy thereof. However, the present invention is not limited thereto, and the first conductive layer 321 and the second conductive layer 322 may be formed of a material capable of ensuring a conductive function.
- the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste.
- the conductive paste may be at least one selected from the group consisting of solder paste, silver paste, and the like.
- the light emitting device package according to the embodiment may include a first upper recess R3 and a second upper recess R4 as shown in FIG.
- the first upper recess R3 may be provided on the upper surface of the first frame 111. [ The first upper recess R3 may be recessed from the upper surface of the first frame 111 in a downward direction. The first upper recess R3 may be spaced apart from the first opening TH1.
- the first upper recess R3 may be provided adjacent to three sides of the first electrode 121 as viewed in the upper direction, as shown in Fig.
- the first upper recess R3 may be provided in the shape of " ["
- the second upper recess R4 may be provided on the upper surface of the second frame 112. [ The second upper recess R4 may be recessed in a downward direction from the upper surface of the second frame 112. [ The second upper recess R4 may be spaced apart from the second opening TH2.
- the second upper recess R4 may be provided adjacent to three sides of the second electrode 122 when viewed from the top, as shown in Fig.
- the second upper recess R4 may be provided in the shape of "] " around the second electrode 122.
- first upper recess R3 and the second upper recess R4 may be provided with a width of several tens of micrometers to several hundreds of micrometers.
- the light emitting device package according to the embodiment may include a resin part 135 as shown in FIG.
- the resin part 135 may be provided to the first upper recess R3 and the second upper recess R4.
- the resin part 135 may be disposed on a side surface of the first electrode 121.
- the resin part 135 may be provided to the first upper recess R3 and extended to a region where the first electrode 121 is disposed.
- the resin part 135 may be disposed under the semiconductor layer 123.
- the distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 may be several hundred micrometers or less.
- the distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 may be equal to or less than 200 micrometers.
- the distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 is set to a value equal to the distance L11 between the end of the first upper recess R3 and the tip of the light emitting element 120, .
- the distance L11 from the end of the first upper recess R3 to the adjacent end of the light emitting device 120 is set such that the resin portion 135 applied to the first upper recess R3 May be selected as a distance that can be extended to a region where one electrode 121 is disposed.
- the resin part 135 may be disposed on a side surface of the second electrode 122.
- the resin part 135 may be provided to the second upper recess R4 and extended to a region where the second electrode 122 is disposed.
- the resin part 135 may be disposed under the semiconductor layer 123.
- the resin part 135 may be provided on the side surface of the semiconductor layer 123. It is possible to effectively prevent the first and second conductive layers 321 and 322 from moving to the side surface of the semiconductor layer 123 by disposing the resin part 135 on the side surface of the semiconductor layer 123. [ When the resin part 135 is disposed on the side surface of the semiconductor layer 123, the resin part 135 can be disposed under the active layer of the semiconductor layer 123, Can be improved.
- the first upper recess R3 and the second upper recess R4 may provide sufficient space for the resin part 135 to be provided.
- the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicone-based material have.
- the resin part 135 may include a reflective material and may include, for example, white silicone including TiO2 and / or Silicone.
- the resin part 135 may be disposed below the light emitting device 120 to perform a sealing function. In addition, the resin part 135 can improve adhesion between the light emitting device 120 and the first frame 111. The resin part 135 can improve the adhesion between the light emitting device 120 and the second frame 112.
- the resin part 135 may seal the periphery of the first electrode 121 and the second electrode 122.
- the resin part 135 may be formed on the light emitting device 120 such that the first conductive layer 321 and the second conductive layer 322 are out of the first opening area TH1 and the second opening area TH2, And can be prevented from being moved.
- the light emitting device package according to the embodiment may include a molding part 140.
- the molding part 140 may be provided on the light emitting device 120.
- the molding part 140 may be disposed on the first frame 111 and the second frame 112.
- the molding part 140 may be disposed in the cavity C provided by the package body 110.
- the molding part 140 may be disposed on the resin part 135.
- the light emitting device package 100 is connected to the first electrode 121 through the first opening TH1 and the second electrode 122 through the second opening TH2, ) May be connected to the power source.
- the light emitting device 120 can be driven by the driving power supplied through the first electrode 121 and the second electrode 122.
- the light emitted from the light emitting device 120 may be provided in an upward direction of the package body 110.
- the light emitting device package 100 may be mounted on a submount, a circuit board, or the like.
- a high temperature process such as a reflow process can be applied.
- a re-melting phenomenon occurs in the bonding region between the lead frame and the light emitting device provided in the light emitting device package, so that the stability of electrical connection and physical coupling can be weakened.
- the first electrode and the second electrode of the light emitting device according to the embodiment can receive driving power through the conductive layer disposed in the opening.
- the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material.
- the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.
- the selection range for the material constituting the body 113 can be widened.
- the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.
- the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.
- PPA PolyPhtalAmide
- PCT PolyCyclohexylenedimethylene Terephthalate
- EMC Epoxy Molding Compound
- FIG. 21 a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 20.
- FIG. 21 a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 20.
- the light emitting device package shown in FIG. 21 differs from the light emitting device package described with reference to FIGS. 18 to 20 in the formation positions of the first upper recess R3 and the second upper recess R4.
- a portion of the first upper recess R3 may be provided so as to be overlapped with the semiconductor layer 123 in the vertical direction when viewed from the upper direction, as shown in FIG. 21 have.
- a lateral region of the first upper recess R3 adjacent to the first electrode 121 may be provided extending below the semiconductor layer 123.
- a part of the second upper recess R4 may overlap with the semiconductor layer 123 in the vertical direction when viewed from the upper direction, as shown in FIG. 21, Can be provided.
- a lateral region of the second upper recess R4 adjacent to the second electrode 122 may be provided extending below the semiconductor layer 123.
- the first upper recess R3 and the second upper recess R4 may provide sufficient space under which the resin 135 may be provided under the light emitting element 120. [ The first upper recess R 3 and the second upper recess R 4 may provide a suitable space under which a kind of underfill process may be performed under the light emitting device 120.
- the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicone-based material have.
- the resin part 135 may be a reflection part that reflects light emitted from the light emitting device 120, and may be a resin including a reflective material such as TiO 2 .
- the resin part 135 may include white silicone.
- the resin part 135 may be disposed below the light emitting device 120 to perform a sealing function. In addition, the resin part 135 can improve adhesion between the light emitting device 120 and the first frame 111. The resin part 135 can improve the adhesion between the light emitting device 120 and the second frame 112.
- the resin part 135 may seal the periphery of the first electrode 121 and the second electrode 122.
- the resin part 135 may be formed on the light emitting device 120 such that the first conductive layer 321 and the second conductive layer 322 are out of the first opening area TH1 and the second opening area TH2, And can be prevented from being moved.
- the resin part 135 may reflect light emitted from the light emitting element 120 toward the upper part of the package body 110 The light extraction efficiency of the light emitting device package 100 can be improved.
- the light emitting device package 100 is connected to the first electrode 121 through the first opening TH1 and the second electrode 122 through the second opening TH2, ) May be connected to the power source.
- the light emitting device package 100 may be mounted on a submount, a circuit board, or the like.
- a high temperature process such as a reflow process can be applied.
- a re-melting phenomenon occurs in the bonding region between the lead frame and the light emitting device provided in the light emitting device package, so that the stability of electrical connection and physical coupling can be weakened.
- the first electrode and the second electrode of the light emitting device according to the embodiment can receive driving power through the conductive layer disposed in the opening.
- the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material.
- the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.
- the selection range for the material constituting the body 113 can be widened.
- the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.
- the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.
- PPA PolyPhtalAmide
- PCT PolyCyclohexylenedimethylene Terephthalate
- EMC Epoxy Molding Compound
- FIG. 22 a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 21.
- FIG. 22 a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 21.
- the package body 110 may include a first frame 111 and a second frame 112.
- the first frame 111 and the second frame 112 may be spaced apart from each other.
- the package body 110 may include a body 113.
- the body 113 may be disposed between the first frame 111 and the second frame 112.
- the body 113 may function as an electrode separation line.
- the first frame 111 and the second frame 112 may be provided as an insulating frame.
- the first frame 111 and the second frame 112 can stably provide the structural strength of the package body 110.
- first frame 111 and the second frame 112 may be provided as a conductive frame.
- the first frame 111 and the second frame 112 can stably provide the structural strength of the package body 110 and can be electrically connected to the light emitting device 120.
- first frame 111 and the second frame 112 are formed of an insulating frame and the case of forming a conductive frame will be described later.
- the light emitting device 120 may include a first electrode 121, a second electrode 122, and a semiconductor layer 123.
- the first electrode 121 may be disposed on the lower surface of the light emitting device 120.
- the second electrode 122 may be disposed on the lower surface of the light emitting device 120.
- the first electrode 121 and the second electrode 122 may be spaced apart from each other on the lower surface of the light emitting device 120.
- the first electrode 121 may be disposed on the first frame 111.
- the second electrode 122 may be disposed on the second frame 112.
- the light emitting device package 100 may include a first opening portion TH1 and a second opening portion TH2, as shown in FIG.
- the first frame 111 may include the first opening TH1.
- the second frame 112 may include the second opening TH2.
- the first opening (TH1) may be provided in the first frame (111).
- the first opening (TH1) may be provided through the first frame (111).
- the first opening TH1 may be provided through the upper surface and the lower surface of the first frame 111 in a first direction.
- the first opening TH1 may be disposed under the first electrode 121 of the light emitting device 120. [ The first opening TH1 may be provided so as to overlap with the first electrode 121 of the light emitting device 120. [ The first opening TH1 may be provided in a superimposed manner with the first electrode 121 of the light emitting device 120 in a first direction toward the lower surface from the upper surface of the first frame 111. [
- the second opening (TH2) may be provided in the second frame (112).
- the second opening (TH2) may be provided through the second frame (112).
- the second opening portion TH2 may be provided through the upper surface and the lower surface of the second frame 112 in a first direction.
- the second opening TH2 may be disposed under the second electrode 122 of the light emitting device 120.
- the second opening TH2 may be provided in a superimposed manner with the second electrode 122 of the light emitting device 120.
- the second opening portion TH2 may be provided in a manner overlapping with the second electrode 122 of the light emitting device 120 in a first direction toward the bottom surface from the top surface of the second frame 112.
- the first opening TH1 and the second opening TH2 may be spaced apart from each other.
- the first opening portion TH1 and the second opening portion TH2 may be spaced apart from each other below the lower surface of the light emitting device 120.
- the width W1 of the upper region of the first opening TH1 may be less than or equal to the width of the first electrode 121.
- the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the second electrode 122.
- the first electrode 121 of the light emitting device 120 and the first frame 111 can be more firmly attached.
- the second electrode 122 of the light emitting device 120 and the second frame 112 can be more firmly attached.
- the light emitting device package 100 may include an adhesive 130, as shown in FIG.
- the adhesive 130 may be disposed between the body 113 and the light emitting device 120.
- the adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120.
- the light emitting device package 100 may include a recess R as shown in FIG.
- the recesses R may be provided in the body 113.
- the recess R may be provided between the first opening TH1 and the second opening TH2.
- the recess (R) may be recessed in a downward direction from an upper surface of the body (113).
- the recess R may be disposed below the light emitting device 120.
- the recess R may be provided to overlap with the light emitting device 120 in the first direction.
- the adhesive 130 may be disposed in the recess R.
- the adhesive 130 may be disposed between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed between the first electrode 121 and the second electrode 122.
- the adhesive 130 may be disposed in contact with a side surface of the first electrode 121 and a side surface of the second electrode 122.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed, for example, in direct contact with the upper surface of the body 113.
- the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120.
- the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material .
- the adhesive 130 may comprise white silicone.
- the adhesive 130 may provide a stable clamping force between the body 113 and the light emitting device 120. When the light is emitted to the lower surface of the light emitting device 120, It is possible to provide a light diffusion function between the bodies 113. [ When the light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the adhesive 130 may improve the light extraction efficiency of the light emitting device package 100 by providing a light diffusion function.
- the recess R may provide a suitable space under which an under-fill process may be performed under the light emitting device 120.
- the recess R may be provided at a depth greater than the first depth so that the adhesive 130 may be sufficiently provided between the lower surface of the light emitting device 120 and the upper surface of the body 113.
- the recesses R may be provided at a second depth or less to provide stable strength of the body 113.
- the light emitting device package 100 may include a first conductive layer 321 and a second conductive layer 322, as shown in FIG.
- the first conductive layer 321 may be spaced apart from the second conductive layer 322.
- the first conductive layer 321 may be provided in the first opening TH1.
- the first conductive layer 321 may be disposed below the first electrode 121.
- the width of the first conductive layer 321 may be smaller than the width of the first electrode 121.
- the first electrode 121 may have a width in a second direction perpendicular to the first direction in which the first opening portion TH1 is formed.
- the width of the first electrode 121 may be greater than the width of the first opening TH1 in the second direction.
- the first conductive layer 321 may be disposed in direct contact with the lower surface of the first electrode 121.
- the first conductive layer 321 may be electrically connected to the first electrode 121.
- the first conductive layer 321 may be surrounded by the first frame 111.
- the second conductive layer 322 may be provided in the second opening TH2.
- the second conductive layer 322 may be disposed under the second electrode 122.
- the width of the second conductive layer 322 may be smaller than the width of the second electrode 122.
- the second electrode 122 may have a width in a second direction perpendicular to the first direction in which the second opening portion TH2 is formed.
- the width of the second electrode 122 may be greater than the width of the second opening TH2 in the second direction.
- the second conductive layer 322 may be disposed in direct contact with the lower surface of the second electrode 122.
- the second conductive layer 322 may be electrically connected to the second electrode 122.
- the second conductive layer 322 may be surrounded by the second frame 112.
- the first conductive layer 321 and the second conductive layer 322 may include one selected from the group consisting of Ag, Au, Pt, and the like, or an alloy thereof. However, the present invention is not limited thereto, and the first conductive layer 321 and the second conductive layer 322 may be formed of a material capable of ensuring a conductive function.
- the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste.
- the conductive paste may include a solder paste, a silver paste, and the like.
- first conductive layer 321 and the second conductive layer 322 may be provided in a plurality of layers as shown in FIG.
- the first conductive layer 321 may include a first upper conductive layer 321a and a first lower conductive layer 321b.
- the first upper conductive layer 321a may be provided in an upper region of the first opening TH1.
- the first lower conductive layer 321b may be provided in a lower region of the first opening TH1.
- the second conductive layer 322 may include a second upper conductive layer 322a and a second lower conductive layer 322b.
- the second upper conductive layer 322a may be provided in an upper region of the second opening portion TH2.
- the second lower conductive layer 322b may be provided in a lower region of the second opening TH2.
- the first upper conductive layer 321a and the first lower conductive layer 321b may include different materials.
- the first upper conductive layer 321a and the first lower conductive layer 321b may have different melting points.
- the melting point of the first upper conductive layer 321a may be selected to be higher than the melting point of the first lower conductive layer 321b.
- the conductive paste for forming the first upper conductive layer 321a and the conductive paste for forming the first lower conductive layer 321b may be provided differently.
- the first upper conductive layer 321a may be formed using silver paste, for example, and the first lower conductive layer 321b may be formed using solder paste, for example.
- the silver paste provided to the first opening portion TH1 is electrically connected to the first electrode 121 and the first frame 111 in the case where the first upper conductive layer 321a is formed of silver paste, And the extent of penetration was found to be weak or absent.
- the first upper conductive layer 321a is formed of silver paste, it is possible to prevent the light emitting device 120 from being electrically short-circuited or deteriorated.
- the manufacturing cost can be reduced.
- the conductive paste forming the second upper conductive layer 322a and the conductive paste forming the second lower conductive layer 322b may be provided differently.
- the second upper conductive layer 322a may be formed using silver paste, for example, and the second lower conductive layer 322b may be formed using solder paste, for example.
- the silver paste provided to the second opening portion TH2 is electrically connected to the second electrode 122 and the second frame 112 in the case where the second upper conductive layer 322a is formed of silver paste, And the extent of penetration was found to be weak or absent.
- the second upper conductive layer 322a is formed of a silver paste, it is possible to prevent the light emitting device 120 from being electrically short-circuited or deteriorated.
- the manufacturing cost can be reduced.
- the light emitting device package 100 may include a first lower recess R10 and a second lower recess R20, as shown in FIG.
- the first lower recess R10 and the second lower recess R20 may be spaced apart from each other.
- the first lower recess (R10) may be provided on the lower surface of the first frame (111).
- the first lower recess R10 may be concave in the upper surface direction on the lower surface of the first frame 111.
- the first lower recess R10 may be spaced apart from the first opening TH1.
- the first lower recess R10 may be provided in a width of several micrometers to several tens of micrometers.
- a resin part may be provided in the first lower recess R10.
- the resin portion filled in the first lower recess R10 may be provided with the same material as the body 113, for example.
- a resin part filled in the first lower recess R10 may be provided in the process of forming the first frame 111, the second frame 112, and the body 113 through an injection process or the like .
- the resin part filled in the first lower recess R10 may be disposed around the lower surface area of the first frame 111 providing the first opening TH1.
- the lower surface of the first frame 111 providing the first opening TH1 may be disposed in a shape of an island in a state separated from a lower surface of the first frame 111 surrounding the first frame 111.
- the lower surface of the first frame 111 providing the first opening TH1 is divided into a resin portion filled in the first lower recess R10 and a lower portion of the body 113
- the second frame 111 may be isolated from the surrounding first frame 111.
- the first conductive layer 321 provided in the first opening TH1 is separated from the first opening TH1 and the resin part or the body 113 filled in the first lower recess R10 It can be prevented from spreading over.
- the first conductive layer 321 is prevented from flowing over the region provided with the resin or the body 113 and the first conductive layer 321 is prevented from flowing over the area provided with the first opening TH1 As shown in Fig.
- the first conductive layer 321 can be stably connected to the lower surface of the first electrode 121 in the first opening TH1.
- the second lower recess R20 may be provided on a lower surface of the second frame 112.
- the second lower recess R20 may be concave on the lower surface of the second frame 112 in the upper surface direction.
- the second lower recess R20 may be spaced apart from the second opening TH2.
- the second lower recess R20 may be provided with a width of several micrometers to several tens of micrometers.
- a resin part may be provided in the second lower recess R20.
- the resin portion filled in the second lower recess R20 may be provided with the same material as the body 113, for example.
- a resin part filled in the second lower recess R20 may be provided in the process of forming the first frame 111, the second frame 112, and the body 113 through an injection process or the like .
- the resin portion filled in the second lower recess R20 may be disposed around the lower surface area of the second frame 112 that provides the second opening TH2.
- the lower surface of the second frame 112 providing the second opening TH2 may be disposed in a form of an island in a shape separated from the lower surface of the second frame 112 surrounding the second frame 112.
- the lower surface of the second frame 112, which provides the second opening TH2 has a resin portion filled in the second lower recess R20 and a lower portion of the body 113 May be isolated from the second frame 112 in the vicinity.
- the second conductive layer 322 provided in the second opening TH2 is moved away from the second opening TH2 and the resin part or the body 113 filled in the second lower recess R20 It can be prevented from spreading over.
- the second conductive layer 322 is prevented from flowing over the region provided with the resin or the body 113 and the second conductive layer 322 is prevented from flowing over the area provided with the second opening TH2, As shown in Fig. In addition, the second conductive layer 322 can be stably connected to the lower surface of the second electrode 122 in the second opening portion TH2.
- the light emitting device package 100 may include a resin part 135 as shown in FIG.
- the resin part 135 may be disposed between the first frame 111 and the light emitting device 120.
- the resin part 135 may be disposed between the second frame 112 and the light emitting device 120.
- the resin part 135 may be provided on the bottom surface of the cavity C provided in the package body 110.
- the resin part 135 may be disposed on a side surface of the first electrode 121.
- the resin part 135 may be disposed on a side surface of the second electrode 122.
- the resin part 135 may be disposed under the semiconductor layer 123.
- the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicone-based material have.
- the resin part 135 may be a reflection part that reflects light emitted from the light emitting device 120, and may be a resin including a reflective material such as TiO 2 .
- the resin part 135 may include white silicone.
- the resin part 135 may be disposed below the light emitting device 120 to perform a sealing function. In addition, the resin part 135 can improve adhesion between the light emitting device 120 and the first frame 111. The resin part 135 can improve the adhesion between the light emitting device 120 and the second frame 112.
- the resin part 135 may seal the periphery of the first electrode 121 and the second electrode 122.
- the resin part 135 may be formed on the light emitting device 120 such that the first conductive layer 321 and the second conductive layer 322 are out of the first opening area TH1 and the second opening area TH2, And can be prevented from being moved.
- the light emitting device package 100 may include a molding part 140, as shown in FIG.
- the molding part 140 may be provided on the light emitting device 120.
- the molding part 140 may be disposed on the first frame 111 and the second frame 112.
- the molding part 140 may be disposed in the cavity C provided by the package body 110.
- the molding part 140 may be disposed on the resin part 135.
- the first frame 111 may include a lower recess provided on the lower surface and an upper recess provided on the upper surface.
- the first frame 111 may include at least one lower recess provided on the underside.
- the first frame 111 may include at least one upper recess provided on the upper surface.
- the first frame 111 may include at least one upper recess provided on the upper surface and at least one lower recess provided on the lower surface.
- the first frame 111 may be provided in a structure in which recesses are not formed on the upper surface and the lower surface.
- the second frame 112 may include at least one lower recess provided on the underside. In addition, the second frame 112 may include at least one upper recess provided on the upper surface. In addition, the second frame 112 may include at least one upper recess provided on the upper surface and at least one lower recess provided on the lower surface. Also, the second frame 112 may be provided in a structure in which recesses are not formed on the top and bottom surfaces.
- the light emitting device package 100 is connected to the first electrode 121 through the first opening TH1 and the second electrode 122 through the second opening TH2, ) May be connected to the power source.
- the light emitting device 120 can be driven by the driving power supplied through the first electrode 121 and the second electrode 122.
- the light emitted from the light emitting device 120 may be provided in an upward direction of the package body 110.
- the light emitting device package 100 may be mounted on a submount, a circuit board, or the like.
- a high temperature process such as a reflow process can be applied.
- a re-melting phenomenon occurs in the bonding region between the lead frame and the light emitting device provided in the light emitting device package, so that the stability of electrical connection and physical coupling can be weakened.
- the first electrode and the second electrode of the light emitting device according to the embodiment can receive driving power through the conductive layer disposed in the opening.
- the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material.
- the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.
- the selection range for the material constituting the body 113 can be widened.
- the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.
- the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.
- PPA PolyPhtalAmide
- PCT PolyCyclohexylenedimethylene Terephthalate
- EMC Epoxy Molding Compound
- the light emitting device package 100 may be mounted on a submount, a circuit board, or the like.
- FIG 23 shows an example in which the light emitting device package 100 described with reference to FIGS. 1 to 22 is mounted on the circuit board 310 and is supplied to the light emitting device package 300 according to an embodiment of the present invention .
- the light emitting device package 300 may include a circuit board 310, a package body 110, and a light emitting device 120, as shown in FIG.
- the circuit board 310 may include a first pad 311, a second pad 312, and a substrate 313.
- the substrate 313 may be provided with a power supply circuit for controlling the driving of the light emitting device 120.
- the package body 110 may be disposed on the circuit board 310.
- the first pad 311 and the first electrode 121 may be electrically connected to each other.
- the second pad 312 and the second electrode 122 may be electrically connected to each other.
- the first pad 311 and the second pad 312 may include a conductive material.
- the first pad 311 and the second pad 312 may be formed of a material selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, At least one selected material or alloy thereof.
- the first pad 311 and the second pad 312 may be provided as a single layer or a multilayer.
- the package body 110 may include a first frame 111 and a second frame 112.
- the first frame 111 and the second frame 112 may be spaced apart from each other.
- the package body 110 may include a body 113.
- the body 113 may be disposed between the first frame 111 and the second frame 112.
- the body 113 may function as an electrode separation line.
- the first frame 111 and the second frame 112 may be provided as an insulating frame.
- the first frame 111 and the second frame 112 can stably provide the structural strength of the package body 110.
- first frame 111 and the second frame 112 may be provided as a conductive frame.
- the first frame 111 and the second frame 112 can stably provide the structural strength of the package body 110 and can be electrically connected to the light emitting device 120.
- the package body 110 may include a first opening TH1 and a second opening TH2 extending from the upper surface to the lower surface in a first direction.
- the first frame 111 may include the first opening TH1.
- the second frame 112 may include the second opening TH2.
- the first opening (TH1) may be provided in the first frame (111).
- the first opening (TH1) may be provided through the first frame (111).
- the first opening TH1 may be provided through the upper surface and the lower surface of the first frame 111 in a first direction.
- the first opening TH1 may be disposed under the first electrode 121 of the light emitting device 120. [ The first opening TH1 may be provided so as to overlap with the first electrode 121 of the light emitting device 120. [ The first opening TH1 may be provided in a superimposed manner with the first electrode 121 of the light emitting device 120 in a first direction toward the lower surface from the upper surface of the first frame 111. [
- the second opening (TH2) may be provided in the second frame (112).
- the second opening (TH2) may be provided through the second frame (112).
- the second opening portion TH2 may be provided through the upper surface and the lower surface of the second frame 112 in a first direction.
- the second opening TH2 may be disposed under the second electrode 122 of the light emitting device 120.
- the second opening TH2 may be provided in a superimposed manner with the second electrode 122 of the light emitting device 120.
- the second opening portion TH2 may be provided in a manner overlapping with the second electrode 122 of the light emitting device 120 in a first direction toward the bottom surface from the top surface of the second frame 112.
- the first opening TH1 and the second opening TH2 may be spaced apart from each other.
- the first opening portion TH1 and the second opening portion TH2 may be spaced apart from each other below the lower surface of the light emitting device 120.
- the light emitting device package 300 may include an adhesive 130, as shown in FIG.
- the adhesive 130 may be disposed between the body 113 and the light emitting device 120.
- the adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120.
- the light emitting device package 300 may include a recess R as shown in FIG.
- the recesses R may be provided in the body 113.
- the recess R may be provided between the first opening TH1 and the second opening TH2.
- the recess (R) may be recessed in a downward direction from an upper surface of the body (113).
- the recess R may be disposed below the light emitting device 120.
- the recess R may be provided to overlap with the light emitting device 120 in the first direction.
- the adhesive 130 may be disposed in the recess R.
- the adhesive 130 may be disposed between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed between the first electrode 121 and the second electrode 122.
- the adhesive 130 may be disposed in contact with a side surface of the first electrode 121 and a side surface of the second electrode 122.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110.
- the adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed, for example, in direct contact with the upper surface of the body 113.
- the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120.
- the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material .
- the adhesive 130 may comprise white silicone.
- the adhesive 130 may provide a stable clamping force between the body 113 and the light emitting device 120. When the light is emitted to the lower surface of the light emitting device 120, It is possible to provide a light diffusion function between the bodies 113. [ When the light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the adhesive 130 may improve the light extraction efficiency of the light emitting device package 300 by providing a light diffusion function.
- the light emitting device package 300 may include a first conductive layer 321 and a second conductive layer 322, as shown in FIG.
- the first conductive layer 321 may be spaced apart from the second conductive layer 322.
- the first conductive layer 321 may be provided in the first opening TH1.
- the first conductive layer 321 may be disposed below the first electrode 121.
- the width of the first conductive layer 321 may be smaller than the width of the first electrode 121.
- the first electrode 121 may have a width in a second direction perpendicular to the first direction in which the first opening portion TH1 is formed.
- the width of the first electrode 121 may be greater than the width of the first opening TH1 in the second direction.
- the first conductive layer 321 may be disposed in direct contact with the lower surface of the first electrode 121.
- the first conductive layer 321 may be electrically connected to the first electrode 121.
- the first conductive layer 321 may be surrounded by the first frame 111.
- the second conductive layer 322 may be provided in the second opening TH2.
- the second conductive layer 322 may be disposed under the second electrode 122.
- the width of the second conductive layer 322 may be smaller than the width of the second electrode 122.
- the second electrode 122 may have a width in a second direction perpendicular to the first direction in which the second opening portion TH2 is formed.
- the width of the second electrode 122 may be greater than the width of the second opening TH2 in the second direction.
- the second conductive layer 322 may be disposed in direct contact with the lower surface of the second electrode 122.
- the second conductive layer 322 may be electrically connected to the second electrode 122.
- the second conductive layer 322 may be surrounded by the second frame 112.
- the first conductive layer 321 and the second conductive layer 322 may include one selected from the group consisting of Ag, Au, Pt, and the like, or an alloy thereof. However, the present invention is not limited thereto, and the first conductive layer 321 and the second conductive layer 322 may be formed of a material capable of ensuring a conductive function.
- the first pad 311 of the circuit board 310 and the first conductive layer 321 may be electrically connected.
- the second pad 312 of the circuit board 310 and the second conductive layer 322 may be electrically connected.
- a separate bonding layer may be further provided between the first pad 311 and the first conductive layer 321. Further, a separate bonding layer may be additionally provided between the second pad 312 and the second conductive layer 322.
- the first conductive layer 321 and the second conductive layer 322 may be mounted on the circuit board 310 by eutectic bonding.
- the light emitting device package 300 is configured such that power supplied from the circuit board 310 is supplied to the first conductive layer 321 and the second conductive layer 322 through the first conductive layer 321 and the second conductive layer 322, 1 electrode 121 and the second electrode 122, respectively.
- the first pad 311 of the circuit board 310 and the first conductive layer 321 are in direct contact with each other and the second pad 312 of the circuit board 310 and the second conductive layer 322 are directly contacted.
- the first frame 111 and the second frame 112 may be formed as an insulating frame.
- the first frame 111 and the second frame 112 may be formed as a conductive frame.
- the first electrode and the second electrode of the light emitting device according to the embodiment provide driving power through the conductive layer disposed in the opening portion Can receive.
- the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material.
- the light emitting device package according to the embodiment has advantages such that the electrical connection and the physical bonding force are not deteriorated because the re-melting phenomenon does not occur even when the light emitting device package according to the embodiment is bonded to the main substrate through a reflow process have.
- the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.
- the selection range for the material constituting the body 113 can be widened.
- the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.
- the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.
- PPA PolyPhtalAmide
- PCT PolyCyclohexylenedimethylene Terephthalate
- EMC Epoxy Molding Compound
- the light emitting device package 400 according to the embodiment of the present invention shown in FIG. 24 is different from the light emitting device package 100 according to another example in which the light emitting device package 100 described with reference to FIGS. 1 to 22 is mounted on the circuit board 410 .
- the light emitting device package 400 may include a circuit board 410, a package body 110, and a light emitting device 120, as shown in FIG.
- the circuit board 410 may include a first pad 411, a second pad 412, and a substrate 413.
- the substrate 313 may be provided with a power supply circuit for controlling the driving of the light emitting device 120.
- the package body 110 may be disposed on the circuit board 410.
- the first pad 411 and the first electrode 121 may be electrically connected to each other.
- the second pad 412 and the second electrode 122 may be electrically connected.
- the first pad 411 and the second pad 412 may include a conductive material.
- the first pad 411 and the second pad 412 may be formed of a material selected from the group consisting of Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, At least one selected material or alloy thereof.
- the first pad 411 and the second pad 412 may be provided as a single layer or a multilayer.
- the package body 110 may include a first frame 111 and a second frame 112.
- the first frame 111 and the second frame 112 may be spaced apart from each other.
- the package body 110 may include a body 113.
- the body 113 may be disposed between the first frame 111 and the second frame 112.
- the body 113 may function as an electrode separation line.
- the first frame 111 and the second frame 112 may be provided as a conductive frame.
- the first frame 111 and the second frame 112 can stably provide the structural strength of the package body 110 and can be electrically connected to the light emitting device 120.
- the package body 110 may include a first opening TH1 and a second opening TH2 extending from the upper surface to the lower surface in a first direction.
- the first frame 111 may include the first opening TH1.
- the second frame 112 may include the second opening TH2.
- the first opening (TH1) may be provided in the first frame (111).
- the first opening (TH1) may be provided through the first frame (111).
- the first opening TH1 may be provided through the upper surface and the lower surface of the first frame 111 in a first direction.
- the first opening TH1 may be disposed under the first electrode 121 of the light emitting device 120. [ The first opening TH1 may be provided so as to overlap with the first electrode 121 of the light emitting device 120. [ The first opening TH1 may be provided in a superimposed manner with the first electrode 121 of the light emitting device 120 in a first direction toward the lower surface from the upper surface of the first frame 111. [
- the second opening (TH2) may be provided in the second frame (112).
- the second opening (TH2) may be provided through the second frame (112).
- the second opening portion TH2 may be provided through the upper surface and the lower surface of the second frame 112 in a first direction.
- the second opening TH2 may be disposed under the second electrode 122 of the light emitting device 120.
- the second opening TH2 may be provided in a superimposed manner with the second electrode 122 of the light emitting device 120.
- the second opening portion TH2 may be provided in a manner overlapping with the second electrode 122 of the light emitting device 120 in a first direction toward the bottom surface from the top surface of the second frame 112.
- the first opening TH1 and the second opening TH2 may be spaced apart from each other.
- the first opening portion TH1 and the second opening portion TH2 may be spaced apart from each other below the lower surface of the light emitting device 120.
- the light emitting device package 400 may include an adhesive 130, as shown in FIG.
- the adhesive 130 may be disposed between the body 113 and the light emitting device 120.
- the adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120.
- the light emitting device package 400 may include a recess R as shown in FIG.
- the recesses R may be provided in the body 113.
- the recess R may be provided between the first opening TH1 and the second opening TH2.
- the recess (R) may be recessed in a downward direction from an upper surface of the body (113).
- the recess R may be disposed below the light emitting device 120.
- the recess R may be provided to overlap with the light emitting device 120 in the first direction.
- the adhesive 130 may be disposed in the recess R.
- the adhesive 130 may be disposed between the light emitting device 120 and the body 113.
- the adhesive 130 may be disposed between the first electrode 121 and the second electrode 122.
- the adhesive 130 may be disposed in contact with a side surface of the first electrode 121 and a side surface of the second electrode 122.
- the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, a hybrid material including an epoxy-based material and a silicon-based material .
- the adhesive 130 may comprise white silicone.
- the adhesive 130 may provide a stable clamping force between the body 113 and the light emitting device 120. When the light is emitted to the lower surface of the light emitting device 120, It is possible to provide a light diffusion function between the bodies 113. [ When the light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120, the adhesive 130 may improve the light extraction efficiency of the light emitting device package 300 by providing a light diffusion function.
- the light emitting device package 400 may include a first conductive layer 321 and a second conductive layer 322, as shown in FIG.
- the first conductive layer 321 may be spaced apart from the second conductive layer 322.
- the first conductive layer 321 may be provided in the first opening TH1.
- the first conductive layer 321 may be disposed below the first electrode 121.
- the width of the first conductive layer 321 may be smaller than the width of the first electrode 121.
- the first electrode 121 may have a width in a second direction perpendicular to the first direction in which the first opening portion TH1 is formed.
- the width of the first electrode 121 may be greater than the width of the first opening TH1 in the second direction.
- the first conductive layer 321 may be disposed in direct contact with the lower surface of the first electrode 121.
- the first conductive layer 321 may be electrically connected to the first electrode 121.
- the first conductive layer 321 may be surrounded by the first frame 111.
- the second conductive layer 322 may be provided in the second opening TH2.
- the second conductive layer 322 may be disposed under the second electrode 122.
- the width of the second conductive layer 322 may be smaller than the width of the second electrode 122.
- the second electrode 122 may have a width in a second direction perpendicular to the first direction in which the second opening portion TH2 is formed.
- the width of the second electrode 122 may be greater than the width of the second opening TH2 in the second direction.
- the second conductive layer 322 may be disposed in direct contact with the lower surface of the second electrode 122.
- the second conductive layer 322 may be electrically connected to the second electrode 122.
- the second conductive layer 322 may be surrounded by the second frame 112.
- the first conductive layer 321 and the second conductive layer 322 may include one selected from the group consisting of Ag, Au, Pt, and the like, or an alloy thereof. However, the present invention is not limited thereto, and the first conductive layer 321 and the second conductive layer 322 may be formed of a material capable of ensuring a conductive function.
- the first pad 411 of the circuit board 410 and the first conductive layer 321 may be electrically connected.
- the second pad 412 of the circuit board 410 and the second conductive layer 322 may be electrically connected.
- the first pad 411 may be electrically connected to the first frame 111. Also, the second pad 412 may be electrically connected to the second frame 112.
- a separate bonding layer may be further provided between the first pad 411 and the first frame 111. Further, a separate bonding layer may be additionally provided between the second pad 412 and the second frame 112.
- the light emitting device package 400 is configured such that the power supplied from the circuit board 410 is transmitted through the first conductive layer 321 and the second conductive layer 322, 1 electrode 121 and the second electrode 122, respectively.
- the first pad 411 of the circuit board 410 is in direct contact with the first frame 111 and the second pad 412 of the circuit board 410 and the second frame 112 of the circuit board 410 are in direct contact with each other. Can be directly contacted.
- the first electrode and the second electrode of the light emitting device according to the embodiment provide driving power through the conductive layer disposed in the opening portion Can receive.
- the melting point of the conductive layer disposed in the opening may be selected to have a higher value than the melting point of the common bonding material.
- the light emitting device package according to the embodiment has advantages such that the electrical connection and the physical bonding force are not deteriorated because the re-melting phenomenon does not occur even when the light emitting device package according to the embodiment is bonded to the main substrate through a reflow process have.
- the package body 110 does not need to be exposed to high temperatures in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being exposed to high temperatures to be damaged or discolored.
- the selection range for the material constituting the body 113 can be widened.
- the body 113 may be provided using not only expensive materials such as ceramics but also relatively inexpensive resin materials.
- the body 113 may include at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin and SMC can do.
- PPA PolyPhtalAmide
- PCT PolyCyclohexylenedimethylene Terephthalate
- EMC Epoxy Molding Compound
- each electrode pad In the case of the light emitting device package according to the embodiment described above, one opening is provided below each electrode pad.
- a plurality of openings may be provided under each electrode pad. Further, the plurality of openings may be provided as openings having different widths.
- the shape of the opening according to the embodiment may be provided in various shapes as shown in Figs. 25 to 27. Fig.
- the opening TH3 according to the embodiment may be provided with the same width from the upper region to the lower region.
- the opening TH4 may be provided in the form of a multi-stage structure.
- the opening TH4 may be provided in a shape having a different inclination angle of the two-stage structure.
- the opening portion TH4 may be provided in a shape having three or more different inclination angles.
- the opening portion TH5 may be provided in a shape in which the width changes from the upper region to the lower region.
- the opening TH5 may be provided in a shape having a curvature from the upper region to the lower region.
- the package body 110 includes only the support member 113 having a flat upper surface, and may not be provided with inclined reflection parts.
- the package body 110 may be provided with a structure for providing the cavity C.
- the package body 110 may be provided with a flat upper surface without providing the cavity C.
- the first and second openings TH1 and TH2 may be formed on the first and second frames 111 and 112 of the package body 110.
- the first and second openings TH1 and TH2 may be provided on the body 113 of the package body 110.
- the upper surface of the body 113 along the major axis direction of the light emitting device 120 may be greater than the length of the first electrode 121 and the second electrode 122 of the light emitting device 120.
- the light emitting device package includes the first and second frames 111 and 112 ). ≪ / RTI >
- the light emitting device package described above may be provided with a flip chip light emitting device as an example.
- the flip chip light emitting device may be provided as a transmissive flip chip light emitting device that emits light in six plane directions, or may be provided as a reflective flip chip light emitting device that emits light in five plane directions.
- the reflection type flip chip light emitting device in which light is emitted in the five-sided direction may have a structure in which a reflection layer is disposed in a direction close to the package package body 110.
- the reflective flip chip light emitting device may include an insulating reflective layer (e.g., a Distributed Bragg Reflector, an Omni Directional Reflector, etc.) and / or a conductive reflective layer (e.g., Ag, Al, Ni, Au, etc.).
- the flip chip light emitting device may include a first electrode electrically connected to the first conductivity type semiconductor layer and a second electrode electrically connected to the second conductivity type semiconductor layer, And may be provided as a general horizontal type light emitting device in which light is emitted between one electrode and the second electrode.
- the flip-chip light emitting device in which the light is emitted in the six-sided direction includes a reflective region in which a reflective layer is disposed between the first and second electrode pads, and a transmissive flip chip light emitting device Can be provided.
- the transmissive flip chip light emitting device refers to a device that emits light to the top surface, four side surfaces, and six surfaces of the bottom surface.
- the reflection type flip chip light emitting device means an element that emits light to the upper surface and the four side surfaces.
- FIG. 28 is a plan view showing a light emitting device according to an embodiment of the present invention
- FIG. 29 is a sectional view taken along line A-A of the light emitting device shown in FIG.
- a first sub-electrode 1141 which is disposed under the first electrode 1171 and the second electrode 1172 but is electrically connected to the first electrode 1171, And a second sub-electrode 1142 electrically connected to the second electrode 1172 can be seen.
- the light emitting device 1100 may include the light emitting structure 1110 disposed on the substrate 1105, as shown in FIGS. 28 and 29.
- the substrate 1105 may be selected from the group consisting of a sapphire substrate (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge.
- the substrate 1105 may be provided as a patterned sapphire substrate (PSS) having a concavo-convex pattern formed on its upper surface.
- PSS patterned sapphire substrate
- the light emitting structure 1110 may include a first conductive semiconductor layer 1111, an active layer 1112, and a second conductive semiconductor layer 1113.
- the active layer 1112 may be disposed between the first conductive semiconductor layer 1111 and the second conductive semiconductor layer 1113.
- the active layer 1112 may be disposed on the first conductive semiconductor layer 1111, and the second conductive semiconductor layer 1113 may be disposed on the active layer 1112.
- the first conductivity type semiconductor layer 1111 may be provided as an n-type semiconductor layer, and the second conductivity type semiconductor layer 1113 may be provided as a p-type semiconductor layer.
- the first conductivity type semiconductor layer 1111 may be provided as a p-type semiconductor layer, and the second conductivity type semiconductor layer 1113 may be provided as an n-type semiconductor layer.
- the light emitting device 1100 may include an ohmic contact layer 1130 as shown in FIG.
- the ohmic contact layer 1130 can improve current diffusion and increase light output.
- the location and shape of the ohmic contact layer 1130 will be further described with reference to the method of manufacturing the light emitting device according to the embodiment.
- the ohmic contact layer 1130 may include at least one selected from the group consisting of a metal, a metal oxide, and a metal nitride.
- the ohmic contact layer 1130 may include a light-transmitting material.
- the ohmic contact layer 1130 may be formed of a material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx / ITO, Ni / IrOx / / IrOx / Au / ITO, Pt, Ni, Au, Rh, and Pd.
- the light emitting device 1100 may include a reflection layer 1160, as shown in FIGS. 28 and 29.
- the reflective layer 1160 may include a first reflective layer 1161, a second reflective layer 1162, and a third reflective layer 1163.
- the reflective layer 1160 may be disposed on the ohmic contact layer 1130.
- the second reflective layer 1162 may include a first opening h 1 for exposing the ohmic contact layer 1130.
- the second reflective layer 1162 may include a plurality of first openings h1 disposed on the ohmic contact layer 1130.
- the first reflective layer 1161 may include a plurality of second openings h2 exposing the upper surface of the first conductive type semiconductor layer 1111.
- the third reflective layer 1163 may be disposed between the first reflective layer 1161 and the second reflective layer 1162.
- the third reflective layer 1163 may be connected to the first reflective layer 1161.
- the third reflective layer 1163 may be connected to the second reflective layer 1162.
- the third reflective layer 1163 may be physically in direct contact with the first reflective layer 1161 and the second reflective layer 1162.
- the width W5 of the third reflective layer 1163 may be provided to be smaller than the width W4 of the recess R described with reference to FIGS.
- light emitted between the first reflective layer 1161 and the third reflective layer 1163 may be incident on the adhesive 130 disposed in the recessed region.
- the light emitted in the downward direction of the light emitting device can be optically diffused by the adhesive 130 and the light extraction efficiency can be improved.
- Light emitted between the second reflective layer 1162 and the third reflective layer 1163 may be incident on the adhesive 130 disposed in the recessed region.
- the light emitted in the downward direction of the light emitting device can be optically diffused by the adhesive 130 and the light extraction efficiency can be improved.
- the reflective layer 1160 may be in contact with the second conductive type semiconductor layer 1113 through a plurality of contact holes provided in the ohmic contact layer 1130. [ The reflective layer 1160 may be physically contacted with the upper surface of the second conductive type semiconductor layer 1113 through a plurality of contact holes provided in the ohmic contact layer 1130. [
- the shape of the ohmic contact layer 1130 and the shape of the reflective layer 1160 according to the embodiment will be further described with reference to the method of manufacturing the light emitting device according to the embodiment.
- the reflective layer 1160 may be provided as an insulating reflective layer.
- the reflective layer 1160 may be provided as a DBR (Distributed Bragg Reflector) layer.
- the reflective layer 1160 may be provided as an ODR (Omni Directional Reflector) layer.
- the reflective layer 1160 may be provided by stacking a DBR layer and an ODR layer.
- the light emitting device 1100 may include a first sub electrode 1141 and a second sub electrode 1142, as shown in FIGS. 28 and 29.
- the first sub-electrode 1141 may be electrically connected to the first conductivity type semiconductor layer 1111 in the second opening h2.
- the first sub-electrode 1141 may be disposed on the first conductive semiconductor layer 1111.
- the first sub-electrode 1141 penetrates the second conductive type semiconductor layer 1113 and the active layer 1112 to form the first conductive type semiconductor layer 1111.
- the first conductivity type semiconductor layer 1111 may be disposed on the upper surface of the first conductive type semiconductor layer 1111 in the recess.
- the first sub electrode 1141 may be electrically connected to the upper surface of the first conductive type semiconductor layer 1111 through a second opening h2 provided in the first reflective layer 1161.
- the second sub-electrode h1 may be vertically overlapped with the second sub-electrode h1.
- the first sub-electrode 1141 may be formed in a plurality of recessed regions, as shown in Figs. 28 and 29, 1-conductivity type semiconductor layer 1111.
- the second sub-electrode 1142 may be electrically connected to the second conductive type semiconductor layer 1113.
- the second sub-electrode 1142 may be disposed on the second conductive type semiconductor layer 1113.
- the ohmic contact layer 1130 may be disposed between the second sub-electrode 1142 and the second conductivity type semiconductor layer 1113.
- the second sub-electrode 1142 may be electrically connected to the second conductive type semiconductor layer 1113 through a first opening h1 provided in the second reflective layer 1162. [ 28 and 29, the second sub-electrode 1142 is electrically connected to the second conductivity type semiconductor layer 1113 through the ohmic contact layer 1130 in a plurality of P regions .
- the second sub-electrode 1142 is electrically connected to the ohmic contact layer (not shown) through a plurality of first openings h1 provided in the second reflective layer 1162 in a plurality of P regions 1130, < / RTI >
- the first sub-electrode 1141 and the second sub-electrode 1142 may have polarities and may be spaced apart from each other.
- the first sub-electrode 1141 may be provided in a plurality of line shapes as an example.
- the second sub-electrode 1142 may be provided in a plurality of line shapes as an example.
- the first sub-electrode 1141 may be disposed between a plurality of second sub-electrodes 1142 adjacent to each other.
- the second sub-electrode 1142 may be disposed between a plurality of neighboring first sub-electrodes 1141.
- first sub-electrode 1141 and the second sub-electrode 1142 may be arranged in different numbers of electrodes. For example, when the first sub-electrode 1141 is an n-electrode and the second sub-electrode 1142 is a p-electrode, the number of the second sub-electrodes 1142 Can be more.
- the electrical conductivity and / or resistance of the second conductivity type semiconductor layer 1113 and the first conductivity type semiconductor layer 1111 are different from each other, the first sub electrode 1141 and the second sub electrode 1142, The electrons injected into the light emitting structure 1110 can be balanced with the holes and thus the optical characteristics of the light emitting device can be improved.
- the first sub-electrode 1141 and the second sub-electrode 1142 may have a single-layer structure or a multi-layer structure.
- the first sub-electrode 1141 and the second sub-electrode 1142 may be ohmic electrodes.
- the first sub-electrode 1141 and the second sub-electrode 1142 may be formed of a metal such as ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / , At least one of Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf or an alloy of two or more of them.
- a metal such as ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / , At least one of Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf or an alloy of two or more of them.
- the light emitting device 1100 may include a protective layer 1150, as shown in FIGS. 28 and 29.
- the passivation layer 1150 may include a plurality of third openings h3 exposing the second sub-electrode 1142.
- the plurality of third openings h3 may be disposed corresponding to a plurality of PB regions provided in the second sub-
- the protective layer 1150 may include a plurality of fourth openings h4 for exposing the first sub-electrode 1141.
- the plurality of fourth openings h4 may be disposed corresponding to a plurality of NB regions provided in the first sub-
- the protective layer 1150 may be disposed on the reflective layer 1160.
- the protective layer 1150 may be disposed on the first reflective layer 1161, the second reflective layer 1162, and the third reflective layer 1163.
- the protective layer 1150 may be provided as an insulating material.
- the passivation layer 1150 may include at least one of Si x O y , SiO x N y , Si x N y , Al x O y , or the like.
- the light emitting device 1100 may include a first electrode 1171 and a second electrode 1172 disposed on the passivation layer 1150, as shown in FIGS. 28 and 29.
- the first electrode 1171 may be disposed on the first reflective layer 1161.
- the second electrode 1172 may be disposed on the second reflective layer 1162.
- the second electrode 1172 may be spaced apart from the first electrode 1171.
- the first electrode 1171 may be in contact with the upper surface of the first sub-electrode 1141 through a plurality of the fourth openings h4 provided in the protective layer 1150 in a plurality of NB regions.
- the plurality of NB regions may be arranged to be perpendicular to the second opening h2.
- a current injected into the first electrode 1171 can be uniformly distributed in the horizontal direction of the first sub-electrode 1141, A current can be evenly injected in the plurality of NB regions.
- the second electrode 1172 may be in contact with the upper surface of the second sub-electrode 1142 through a plurality of the third openings h3 provided in the protective layer 1150 in a plurality of PB regions .
- a current injected into the second electrode 1172 can be uniformly distributed in the horizontal direction of the second sub- So that current can be evenly injected in the plurality of PB regions.
- the first electrode 1171 and the first sub-electrode 1141 can be in contact with each other in the fourth openings h4.
- the second electrode 1172 and the second sub-electrode 1142 may be in contact with each other in a plurality of regions.
- power can be supplied through a plurality of regions, so that current dispersion effect is generated according to increase of the contact area and dispersion of the contact region, and operation voltage can be reduced.
- the first reflective layer 1161 is disposed under the first sub-electrode 1141 and the second reflective layer 1162 is disposed under the first sub-electrode 1141.
- the first reflective layer 1161 and the second reflective layer 1162 reflect light emitted from the active layer 1112 of the light emitting structure 1110 to form a first sub-electrode 1141 and a second sub- It is possible to minimize the occurrence of light absorption and improve the light intensity Po.
- the first reflective layer 1161 and the second reflective layer 1162 are made of an insulating material.
- a material having a high reflectivity for example, a DBR structure Can be achieved.
- the first reflective layer 1161 and the second reflective layer 1162 may have a DBR structure in which materials having different refractive indexes are repeatedly arranged.
- the first reflective layer 1161 and the second reflective layer 1162 may be disposed in a single layer or a stacked structure including at least one of TiO 2 , SiO 2 , Ta 2 O 5 , and HfO 2 .
- the first reflective layer 1161 and the second reflective layer 1162 may emit light from the active layer 1112 according to the wavelength of the light emitted from the active layer 1112. In other words, And can be freely selected to adjust the reflectivity to light.
- the first reflective layer 1161 and the second reflective layer 1162 may be provided as an ODR layer. According to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided as a hybrid type in which a DBR layer and an ODR layer are stacked.
- the light emitting device according to the embodiment When the light emitting device according to the embodiment is mounted by a flip chip bonding method and is implemented as a light emitting device package, the light provided from the light emitting structure 1110 may be emitted through the substrate 1105. Light emitted from the light emitting structure 1110 may be reflected by the first reflective layer 1161 and the second reflective layer 1162 and may be emitted toward the substrate 1105.
- the light emitted from the light emitting structure 1110 may be emitted in the lateral direction of the light emitting structure 1110.
- the light emitted from the light emitting structure 1110 may be transmitted through the first electrode 1171 and the second electrode 1172 among the surfaces on which the first electrode 1171 and the second electrode 1172 are disposed. Can be released to the outside through the unused area.
- the light emitted from the light emitting structure 1110 is reflected by the first reflective layer 1161 and the second reflective layer 1162 among the surfaces on which the first electrode 1171 and the second electrode 1172 are disposed. ), And may be emitted to the outside through a region where the third reflective layer 1163 is not provided.
- the light emitting device 1100 can emit light in six directions surrounding the light emitting structure 1110, and the light intensity can be remarkably improved.
- the sum of the area of the first electrode 1171 and the area of the second electrode 1172 in the upper direction of the light emitting device 1100 is larger than that of the first electrode 1171 And 60% of the total area of the upper surface of the light emitting device 1100 in which the second electrode 1172 is disposed.
- the total area of the upper surface of the light emitting device 1100 may correspond to an area defined by the lateral length and the longitudinal length of the lower surface of the first conductive semiconductor layer 1111 of the light emitting structure 1110 .
- the total area of the upper surface of the light emitting device 1100 may correspond to the area of the upper surface or the lower surface of the substrate 1105.
- the first electrode 1171 and the second electrode 1172 Since the sum of the areas of the first electrode 1171 and the second electrode 1172 is equal to or smaller than 60% of the total area of the light emitting device 1100, the first electrode 1171 And the amount of light emitted to the surface on which the second electrode 1172 is disposed can be increased. Accordingly, according to the embodiment, since the amount of light emitted toward the six surfaces of the light emitting device 1100 is increased, the light extraction efficiency can be improved and the light intensity Po can be increased.
- the sum of the area of the first electrode 1171 and the area of the second electrode 1172 is equal to or less than 30% of the total area of the light emitting device 1100 when viewed from above the light emitting device Can be provided largely.
- the sum of the areas of the first electrode 1171 and the second electrode 1172 is equal to or greater than 30% of the total area of the light emitting device 1100, And the second electrode 1172, and the electrical characteristics of the light emitting device 1100 can be secured.
- the sum of the areas of the first electrode 1171 and the second electrode 1172 is greater than the sum of the areas of the first electrode 1171 and the second electrode 1172 in consideration of the light extraction efficiency and the stability of bonding, It may be selected to be not less than 30% and not more than 60% of the total area.
- the sum of the areas of the first electrode 1171 and the second electrode 1172 is 30% or more to 100% or less of the total area of the light emitting device 1100, the electrical characteristics of the light emitting device 1100 And the bonding force to be mounted on the light emitting device package is ensured, so that stable mounting can be performed.
- the sum of the areas of the first electrode 1171 and the second electrode 1172 is greater than 0% and less than 60% of the total area of the light emitting device 1100, The amount of light emitted to the surface on which the second electrode 1172 is disposed increases, so that the light extraction efficiency of the light emitting device 1100 is improved and the light intensity Po can be increased.
- the total area of the first electrode 1171 and the second electrode 1172 in order to secure the electrical characteristics of the light emitting device 1100 and the bonding force to be mounted on the light emitting device package Is not less than 30% and not more than 60% of the total area of the light emitting device 1100.
- the third reflective layer 1163 may be disposed between the first electrode 1171 and the second electrode 1172.
- the length W5 of the third reflective layer 1163 along the major axis direction of the light emitting device 1100 may correspond to the distance between the first electrode 1171 and the second electrode 1172 .
- the area of the third reflective layer 1163 may be 10% or more and 25% or less of the entire upper surface of the light emitting device 1100, for example.
- the package body disposed under the light emitting device can be discolored or prevented from cracking, , It is advantageous to secure the light extraction efficiency to emit light to the six surfaces of the light emitting element.
- the area of the third reflective layer 1163 is set to be more than 0% and less than 10% of the entire upper surface of the light emitting device 1100 in order to secure a larger light extraction efficiency. And the area of the third reflective layer 1163 may be set to more than 25% and less than 100% of the entire upper surface of the light emitting device 1100 in order to prevent discoloration or cracking in the package body .
- the light generated by the light emitting structure 1110 may be incident on the second region provided between the first electrode 1171 or the second electrode 1172 adjacent to the long side of the light emitting device 1100. [ Can be transmitted and discharged.
- Light generated in the light emitting structure is transmitted to a third region provided between the first electrode 1171 or the second electrode 1172 adjacent to the side surface of the light emitting device 1100 in the short axis direction Can be released.
- the size of the first reflective layer 1161 may be several micrometers larger than the size of the first electrode 1171.
- the area of the first reflective layer 1161 may be sufficiently large to cover the area of the first electrode 1171.
- the length of one side of the first reflective layer 1161 may be about 4 micrometers to 10 micrometers larger than the length of one side of the first electrode 1171 in consideration of the process error.
- the size of the second reflective layer 1162 may be several micrometers larger than the size of the second electrode 1172.
- the area of the second reflective layer 1162 may be sufficiently large to cover the area of the second electrode 1172.
- the length of one side of the second reflective layer 1162 may be about 4 micrometers to 10 micrometers larger than the length of one side of the second electrode 1172 in consideration of the process error.
- the light emitted from the light emitting structure 1110 may be transmitted to the first electrode 1171 and the second electrode 1172 by the first reflective layer 1161 and the second reflective layer 1162, So that it can be reflected without incidence. Therefore, according to the embodiment, light generated and emitted from the light emitting structure 1110 can be minimized by being incident on the first electrode 1171 and the second electrode 1172 and being lost.
- the third reflective layer 1163 is disposed between the first electrode 1171 and the second electrode 1172 and the first electrode 1171 and the second electrode 1172 are disposed between the first electrode 1171 and the second electrode 1172.
- the amount of light emitted between the second electrodes 1172 can be controlled.
- the light emitting device 1100 may be mounted, for example, in a flip chip bonding manner to provide a light emitting device package.
- the package body on which the light emitting device 1100 is mounted is provided by resin or the like, strong light of a short wavelength emitted from the light emitting device 1100 in the lower region of the light emitting device 1100 causes discoloration Or cracks may occur.
- the amount of light emitted between the regions where the first electrode 1171 and the second electrode 1172 are disposed can be controlled, It is possible to prevent the package body disposed in the lower region from being discolored or cracked.
- the light emitting structure 1100 may be formed in an area of 20% or more of the upper surface of the light emitting device 1100 on which the first electrode 1171, the second electrode 1172, and the third reflective layer 1163 are disposed. 1110 may be transmitted and emitted.
- the light extraction efficiency can be improved and the light intensity Po can be increased.
- the ohmic contact layer 1130 may be provided with a plurality of contact holes C1, C2, and C3.
- the second conductivity type semiconductor layer 1113 and the reflective layer 1160 may be bonded to each other through the plurality of contact holes C1, C2, and C3 provided in the ohmic contact layer 1130.
- the reflective layer 1160 can be in direct contact with the second conductive type semiconductor layer 1113 so that the adhesive force can be improved as compared with the case where the reflective layer 1160 is in contact with the ohmic contact layer 1130.
- the bonding force or adhesion between the reflective layer 1160 and the ohmic contact layer 1130 may be weakened.
- the bonding force or adhesion between the materials may be weakened.
- peeling may occur between the two layers. If the peeling occurs between the reflective layer 1160 and the ohmic contact layer 1130, the characteristics of the light emitting device 1100 may deteriorate and the reliability of the light emitting device 1100 can not be secured.
- the reflective layer 1160 can directly contact the second conductive type semiconductor layer 1113, the reflective layer 1160, the ohmic contact layer 1130, The bonding force and the adhesive force between the layers 1113 can be stably provided.
- the reflective layer 1160 can be peeled from the ohmic contact layer 1130 .
- the bonding force between the reflective layer 1160 and the second conductive type semiconductor layer 1113 can be stably provided, the reliability of the light emitting device 1100 can be improved.
- the ohmic contact layer 1130 may be provided with a plurality of contact holes C1, C2, and C3. Light emitted from the active layer 1112 can be incident on the reflective layer 1160 through the plurality of contact holes C1, C2, and C3 provided in the ohmic contact layer 1130 and can be reflected. Accordingly, the light generated in the active layer 1112 is incident on the ohmic contact layer 1130 to be lost, and the light extraction efficiency can be improved. Accordingly, the luminous intensity of the light emitting device 1100 according to the embodiment can be improved.
- a light emitting structure 1110 may be formed on a substrate 1105, as shown in FIGS. 30A and 30B.
- 30A is a plan view showing the shape of the light emitting structure 1110 formed according to the method of manufacturing the light emitting device according to the embodiment
- FIG. 30B is a sectional view of the process along the line A-A of the light emitting device shown in FIG. 30A.
- the light emitting structure 1110 may be formed on the substrate 1105.
- the first conductive semiconductor layer 1111, the active layer 1112, and the second conductive semiconductor layer 1113 may be formed on the substrate 1105.
- the light emitting structure 1110 may include a plurality of mesa openings M exposing the first conductivity type semiconductor layer 1111 by mesa etching.
- the mesa opening M may be provided in a plurality of circular shapes.
- the mesa opening M may also be referred to as a recess.
- the mesa opening M may be provided in various shapes such as an elliptical shape or a polygonal shape as well as a circular shape.
- FIG. 31A is a plan view showing the shape of the ohmic contact layer 1130 formed according to the method of manufacturing a light emitting device according to the embodiment
- FIG. 31B is a sectional view of the process along the line A-A of the light emitting device shown in FIG. 31A.
- the ohmic contact layer 1130 may be formed on the second conductive type semiconductor layer 1113.
- the ohmic contact layer 1130 may include a plurality of openings Ml provided in a region corresponding to the mesa opening M.
- the opening M1 may be provided in a plurality of circular shapes.
- the opening M1 may be provided in various shapes such as an elliptical shape or a polygonal shape as well as a circular shape.
- the ohmic contact layer 1130 may include a first region R1, a second region R2, and a third region R3.
- the first region R1 and the second region R2 may be spaced apart from each other.
- the third region R3 may be disposed between the first region R1 and the second region R2.
- the first region R 1 may include a plurality of openings M 1 provided in a region corresponding to the mesa opening M of the light emitting structure 1110.
- the first region R1 may include a plurality of first contact holes C1.
- the first contact holes C1 may be provided in plural around the opening M1.
- the second region R2 may include a plurality of openings M1 provided in a region corresponding to the mesa opening M of the light emitting structure 1110. [
- the second region R2 may include a plurality of second contact holes C2.
- the second contact holes C2 may be provided in plural around the opening M1.
- the third region R3 may include a plurality of openings M1 provided in a region corresponding to the mesa opening M of the light emitting structure 1110.
- the first region R1 may include a plurality of first contact holes C1.
- the first contact holes C1 may be provided in plural around the opening M1.
- the first contact hole C1, the second contact hole C2, and the third contact hole C3 may be provided with a diameter of several micrometers to tens of micrometers.
- the first contact hole C1, the second contact hole C2, and the third contact hole C3 may be provided with a diameter of, for example, 7 micrometers to 20 micrometers.
- the first contact hole C1, the second contact hole C2, and the third contact hole C3 may be provided in various shapes such as an elliptical shape or a polygonal shape as well as a circular shape.
- the ohmic contact layer 1130 may be formed on the second conductive semiconductor layer 1130.
- the ohmic contact layer 1130 may be formed by the first contact hole C1, the second contact hole C2, Layer 1113 may be exposed.
- FIG. 32A is a plan view showing the shape of the reflection layer 1160 formed according to the method of manufacturing a light emitting device according to the embodiment
- FIG. 32B is a process sectional view taken along line A-A of the light emitting device shown in FIG. 32A.
- the reflective layer 1160 may include a first reflective layer 1161, a second reflective layer 1162, and a third reflective layer 1163.
- the reflective layer 1160 may be disposed on the ohmic contact layer 1130.
- the reflective layer 1160 may be disposed on the first conductivity type semiconductor layer 1111 and the second conductivity type semiconductor layer 1113.
- the first reflective layer 1161 and the second reflective layer 1162 may be spaced apart from each other.
- the third reflective layer 1163 may be disposed between the first reflective layer 1161 and the second reflective layer 1162.
- the first reflective layer 1161 may be disposed on the first region R 1 of the ohmic contact layer 1130.
- the first reflective layer 1161 may be disposed on the plurality of first contact holes Cl provided in the ohmic contact layer 1130.
- the second reflective layer 1162 may be disposed on the second region R2 of the ohmic contact layer 1130. [ The second reflective layer 1162 may be disposed on the plurality of second contact holes C2 provided in the ohmic contact layer 1130. [
- the third reflective layer 1163 may be disposed on the third region R3 of the ohmic contact layer 1130. [ The third reflective layer 1163 may be disposed on a plurality of third contact holes C3 provided in the ohmic contact layer 1130. [
- the second reflective layer 1162 may include a plurality of openings.
- the second reflective layer 1162 may include a plurality of first openings h1.
- the ohmic contact layer 1130 may be exposed through the plurality of first openings h1.
- the first reflective layer 1161 may include a plurality of second openings h2.
- the upper surface of the first conductive type semiconductor layer 1111 may be exposed through the plurality of second openings h2.
- the plurality of second openings h2 may be provided corresponding to the plurality of mesa opening M regions formed in the light emitting structure 1110. [
- the plurality of second openings h2 may be provided corresponding to a plurality of openings M1 provided in the ohmic contact layer 1130.
- the first reflective layer 1161 may be provided on the first region R 1 of the ohmic contact layer 1130.
- the first reflective layer 1161 may be in contact with the second conductive type semiconductor layer 1113 through the first contact hole C1 provided in the ohmic contact layer 1130.
- the second reflective layer 1162 may be provided on the second region R2 of the ohmic contact layer 1130.
- FIG. The second reflective layer 1162 may be in contact with the second conductive type semiconductor layer 1113 through the second contact hole C2 provided in the ohmic contact layer 1130.
- the third reflective layer 1163 may be provided on the third region R3 of the ohmic contact layer 1130.
- the third reflective layer 1163 may be in contact with the second conductive type semiconductor layer 1113 through the third contact hole C3 provided in the ohmic contact layer 1130.
- the adhesion between the third reflective layer 1163 and the second conductive type semiconductor layer 1113 can be improved and the third reflective layer 1163 can be prevented from being peeled off from the ohmic contact layer 1130 .
- FIGS. 33A and 33B a first sub-electrode 1141 and a second sub-electrode 1142 may be formed.
- 33A is a plan view showing the shapes of the first sub-electrode 1141 and the second sub-electrode 1142 formed according to the method of manufacturing a light-emitting device according to the embodiment
- FIG. 33B is a cross-sectional view taken along the line AA of the light- FIG.
- the first sub-electrode 1141 and the second sub-electrode 1142 may be spaced apart from each other.
- the first sub-electrode 1141 may be electrically connected to the first conductive type semiconductor layer 1111.
- the first sub-electrode 1141 may be disposed on the first conductive semiconductor layer 1111.
- the first sub-electrode 1141 is formed by removing a part of the second conductive type semiconductor layer 1113 and a part of the active layer 1112, 1-conductivity type semiconductor layer 1111.
- the first sub-electrode 1141 may be formed in a linear shape, for example.
- the first sub-electrode 1141 may include an N region having a relatively larger area than other linear regions.
- the N region of the first sub-electrode 1141 may be electrically connected to the first electrode 1171 to be formed later.
- the first sub electrode 1141 may be electrically connected to the upper surface of the first conductive type semiconductor layer 1111 through a second opening h2 provided in the first reflective layer 1161.
- the first sub-electrode 1141 may directly contact the upper surface of the first conductivity type semiconductor layer 1111 in a plurality of N regions.
- the second sub-electrode 1142 may be electrically connected to the second conductive type semiconductor layer 1113.
- the second sub-electrode 1142 may be disposed on the second conductive type semiconductor layer 1113.
- the ohmic contact layer 1130 may be disposed between the second sub-electrode 1142 and the second conductivity type semiconductor layer 1113.
- the second sub-electrode 1142 may be formed in a linear shape, for example.
- the second sub-electrode 1142 may include a P region having a relatively larger area than other linear regions.
- the P region of the second sub-electrode 1142 may be electrically connected to the second electrode 1172 to be formed later.
- the second sub electrode 1142 may be electrically connected to the upper surface of the second conductive type semiconductor layer 1113 through a first opening h1 provided in the second reflective layer 1162.
- the second sub-electrode 1142 may be electrically connected to the second conductive type semiconductor layer 1113 through the ohmic contact layer 1130 in a plurality of P regions.
- the second sub-electrode 1142 may directly contact the upper surface of the ohmic contact layer 1130 in a plurality of P regions.
- FIG. 34A is a plan view showing the shape of the protective layer 1150 formed according to the method of manufacturing a light emitting device according to the embodiment
- FIG. 34B is a process sectional view taken along line A-A of the light emitting device shown in FIG. 34A.
- the protective layer 1150 may be disposed on the first sub-electrode 1141 and the second sub-electrode 1142.
- the protective layer 1150 may be disposed on the reflective layer 1160.
- the passivation layer 1150 may include a fourth opening h4 exposing the upper surface of the first sub-electrode 1141.
- the protective layer 1150 may include a plurality of fourth openings h4 for exposing a plurality of NB regions of the first sub-electrode 1141.
- the fourth opening h4 may be provided on a region where the first reflective layer 1161 is disposed.
- the fourth opening h4 may be provided on the first region R1 of the ohmic contact layer 1130.
- the passivation layer 1150 may include a third opening h3 exposing the upper surface of the second sub electrode 1142.
- the protective layer 1150 may include a plurality of third openings h3 exposing a plurality of PB regions of the second sub-electrode 1142.
- the third opening h3 may be provided on a region where the second reflective layer 1162 is disposed.
- the third opening h3 may be provided on the second region R2 of the ohmic contact layer 1130.
- a first electrode 1171 and a second electrode 1172 may be formed.
- 35A is a plan view showing the shapes of the first electrode 1171 and the second electrode 1172 formed according to the method of manufacturing a light emitting device according to the embodiment, FIG.
- the first electrode 1171 and the second electrode 1172 may be formed in the shape shown in FIG. 35A.
- the first electrode 1171 and the second electrode 1172 may be disposed on the protective layer 1150.
- the first electrode 1171 may be disposed on the first reflective layer 1161.
- the second electrode 1172 may be disposed on the second reflective layer 1162.
- the second electrode 1172 may be spaced apart from the first electrode 1171.
- the first electrode 1171 may be in contact with the upper surface of the first sub-electrode 1141 through the fourth opening h4 provided in the protective layer 1150 in a plurality of NB regions.
- the second electrode 1172 may be in contact with the upper surface of the second sub-electrode 1142 through the third opening h3 provided in the protective layer 1150 in a plurality of PB regions.
- the light emitting structure 1110 when the power is applied to the first electrode 1171 and the second electrode 1172, the light emitting structure 1110 can emit light.
- the first electrode 1171 and the first sub electrode 1141 can be in contact with each other in a plurality of regions.
- the second electrode 1172 and the second sub-electrode 1142 may be in contact with each other in a plurality of regions.
- power can be supplied through a plurality of regions, so that current dispersion effect is generated according to increase of the contact area and dispersion of the contact region, and operation voltage can be reduced.
- the light emitting device package according to the embodiment can be applied to the light source device.
- the light source device may include a display device, a lighting device, a head lamp, and the like depending on an industrial field.
- An example of the light source device includes a bottom cover, a reflector disposed on the bottom cover, a light emitting module that emits light and includes a light emitting element, a light emitting module disposed in front of the reflector,
- An optical sheet including a light guide plate, prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, And may include a color filter disposed in front thereof.
- the bottom cover, the reflection plate, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.
- the display device may have a structure in which light emitting elements emitting red, green, and blue light are disposed, respectively, without including a color filter.
- the head lamp includes a light emitting module including a light emitting device package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, A lens that refracts light forward, and a shade that reflects off a portion of the light that is reflected by the reflector and that is directed to the lens to provide the designer with a desired light distribution pattern.
- a light emitting module including a light emitting device package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, A lens that refracts light forward, and a shade that reflects off a portion of the light that is reflected by the reflector and that is directed to the lens to provide the designer with a desired light distribution pattern.
- the lighting device which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply, an inner case, and a socket. Further, the light source device according to the embodiment may further include at least one of a member and a holder.
- the light source module may include the light emitting device package according to the embodiment.
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Abstract
Description
Claims (12)
- 서로 이격되어 배치된 제1 및 제2 프레임;상기 제1 및 제2 프레임 사이에 배치된 몸체;제1 및 제2 전극을 포함하는 발광소자; 및상기 몸체와 상기 발광소자 사이에 배치되는 접착제;를 포함하고,상기 제1 및 제2 프레임 각각은 상면과 하면을 관통하는 제1 및 제2 개구부를 포함하고,상기 몸체는 상면에서 하면으로 오목한 리세스를 포함하고,상기 접착제는 상기 리세스에 배치되고,상기 제1 전극은 상기 제1 개구부 상에 배치되고,상기 제2 전극은 상기 제2 개구부 상에 배치되는 발광소자 패키지.
- 제1항에 있어서,상기 접착제는 상기 몸체의 상면 및 상기 발광소자의 하면과 직접 접촉되어 배치된 발광소자 패키지.
- 제1항에 있어서,상기 제1 개구부에 제공되며 상기 제1 전극의 하면과 직접 접촉되어 배치된 제1 도전층;상기 제2 개구부에 제공되며 상기 제2 전극의 하면과 직접 접촉되어 배치된 제2 도전층;을 포함하는 발광소자 패키지.
- 제3항에 있어서,상기 제1 도전층은 상기 제1 개구부의 상부 영역에 제공된 제1 상부 도전층과 상기 제1 개구부의 하부 영역에 제공된 제1 하부 도전층을 포함하고,상기 제1 상부 도전층과 상기 제1 하부 도전층은 서로 다른 물질을 포함하는 발광소자 패키지.
- 제1항에 있어서,상기 제1 프레임과 상기 제2 프레임은 도전성 프레임인 발광소자 패키지.
- 제1항에 있어서,상기 제1 프레임과 상기 제2 프레임은 절연성 프레임인 발광소자 패키지.
- 제1항에 있어서,상기 제1 프레임의 상면에 제공되며 상기 제1 개구부로부터 이격되어 배치된 제1 상부 리세스;상기 제2 프레임의 상면에 제공되며 상기 제2 개구부로부터 이격되어 배치된 제2 상부 리세스;를 포함하는 발광소자 패키지.
- 제7항에 있어서,상기 제1 상부 리세스에 제공된 제1 수지부와 상기 제2 상부 리세스에 제공된 제2 수지부를 포함하고,상기 제1 수지부와 상기 제2 수지부는 화이트 실리콘을 포함하는 발광소자 패키지.
- 제1항에 있어서,상기 제1 프레임의 하면에 제공되며 상기 제1 개구부로부터 이격되어 배치된 제1 하부 리세스;상기 제2 프레임의 하면에 제공되며 상기 제2 개구부로부터 이격되어 배치된 제2 하부 리세스;를 포함하는 발광소자 패키지.
- 제9항에 있어서,상기 제1 하부 리세스에 제공된 제1 수지부와 상기 제2 하부 리세스에 제공된 제2 수지부를 포함하고,상기 제1 수지부와 상기 제2 수지부는 상기 몸체와 같은 물질을 포함하는 발광소자 패키지.
- 제3항에 있어서,상기 제1 프레임의 하면에 제공되며 상기 제1 개구부로부터 이격되어 배치된 제1 하부 리세스;상기 제2 프레임의 하면에 제공되며 상기 제2 개구부로부터 이격되어 배치된 제2 하부 리세스;를 포함하는 발광소자 패키지.
- 제11항에 있어서,상기 제1 및 제2 하부 리세스에는 상기 제1 및 제2 도전층과 같은 물질 및/또는 상기 몸체와 같은 물질이 제공된 발광소자 패키지.
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EP17870619.8A EP3444856B1 (en) | 2017-06-26 | 2017-09-29 | Light emitting device package |
US15/766,444 US10672959B2 (en) | 2017-06-26 | 2017-09-29 | Light emitting device package and light source apparatus |
JP2018517389A JP7182782B2 (ja) | 2017-06-26 | 2017-09-29 | 発光素子パッケージ及び光源装置 |
CN201780039734.2A CN109429532B (zh) | 2017-06-26 | 2017-09-29 | 发光器件封装和光源设备 |
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US10672954B2 (en) * | 2017-09-01 | 2020-06-02 | Lg Innotek Co., Ltd. | Light emitting device package |
WO2019045506A1 (ko) * | 2017-09-01 | 2019-03-07 | 엘지이노텍 주식회사 | 발광소자 패키지 및 광원 장치 |
KR102455086B1 (ko) * | 2017-09-12 | 2022-10-17 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지 및 광원장치 |
KR102392013B1 (ko) * | 2017-09-15 | 2022-04-28 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 패키지 |
WO2020003789A1 (ja) * | 2018-06-29 | 2020-01-02 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
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CN109429532A (zh) | 2019-03-05 |
US20190088837A1 (en) | 2019-03-21 |
JP7182782B2 (ja) | 2022-12-05 |
KR102473399B1 (ko) | 2022-12-02 |
EP3444856B1 (en) | 2023-05-10 |
EP3444856A4 (en) | 2019-02-20 |
CN109429532B (zh) | 2023-09-29 |
EP3444856A1 (en) | 2019-02-20 |
JP2020526004A (ja) | 2020-08-27 |
US10672959B2 (en) | 2020-06-02 |
KR20190001188A (ko) | 2019-01-04 |
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