WO2019003815A1 - Dispositif de traitement de substrat - Google Patents

Dispositif de traitement de substrat Download PDF

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Publication number
WO2019003815A1
WO2019003815A1 PCT/JP2018/021417 JP2018021417W WO2019003815A1 WO 2019003815 A1 WO2019003815 A1 WO 2019003815A1 JP 2018021417 W JP2018021417 W JP 2018021417W WO 2019003815 A1 WO2019003815 A1 WO 2019003815A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
facing portion
gap
processing apparatus
substrate processing
Prior art date
Application number
PCT/JP2018/021417
Other languages
English (en)
Japanese (ja)
Inventor
吉田　武司
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Publication of WO2019003815A1 publication Critical patent/WO2019003815A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

L'invention concerne un dispositif de traitement de substrat (1) dans lequel une partie opposée inférieure (37) est disposée sous une partie opposée au substrat (35) et fait face à la partie opposée au substrat (35) dans une direction haut-bas avec un espace inférieur (381) entre celles-ci. Dans l'espace inférieur (381), un écoulement d'air d'espace depuis un côté radialement intérieur vers un côté radialement extérieur est formé. La partie opposée inférieure (37) est pourvue d'une surface périphérique externe (376) s'étendant vers le bas et radialement vers l'extérieur à partir de la périphérie externe de l'espace inférieur (381). Dans le dispositif de traitement de substrat (1), le flux d'air qui s'est écoulé hors de l'espace inférieur (381) s'écoule, en raison de l'effet Coanda, le long de la surface périphérique externe (376) de la partie opposée inférieure (37) vers le bas et radialement vers l'extérieur. Le gaz autour du flux d'air est induit par l'effet Coanda et accéléré vers le bas. De cette manière, il est possible de former de préférence un flux d'air vers le bas entre un substrat (9) et une partie coupelle (4). Par conséquent, il devient possible d'empêcher les gouttelettes et analogues de liquide de traitement qui ont été renvoyés par la partie coupelle (4) de se refixer au substrat (9).
PCT/JP2018/021417 2017-06-30 2018-06-04 Dispositif de traitement de substrat WO2019003815A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-128692 2017-06-30
JP2017128692A JP6925185B2 (ja) 2017-06-30 2017-06-30 基板処理装置

Publications (1)

Publication Number Publication Date
WO2019003815A1 true WO2019003815A1 (fr) 2019-01-03

Family

ID=64741563

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/021417 WO2019003815A1 (fr) 2017-06-30 2018-06-04 Dispositif de traitement de substrat

Country Status (3)

Country Link
JP (1) JP6925185B2 (fr)
TW (1) TWI720321B (fr)
WO (1) WO2019003815A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7242392B2 (ja) * 2019-04-16 2023-03-20 東京エレクトロン株式会社 基板処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009117794A (ja) * 2007-10-17 2009-05-28 Ebara Corp 基板洗浄装置
JP2014175532A (ja) * 2013-03-11 2014-09-22 Tokyo Electron Ltd 基板処理装置及び基板処理方法
KR101485579B1 (ko) * 2013-10-02 2015-01-22 주식회사 케이씨텍 기판세정장치
JP2015216224A (ja) * 2014-05-09 2015-12-03 東京エレクトロン株式会社 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体
JP2016143790A (ja) * 2015-02-03 2016-08-08 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9895711B2 (en) * 2015-02-03 2018-02-20 Tokyo Electron Limited Substrate liquid processing apparatus, substrate liquid processing method and substrate processing apparatus
TWI582886B (zh) * 2016-01-12 2017-05-11 弘塑科技股份有限公司 單晶圓溼式處理裝置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009117794A (ja) * 2007-10-17 2009-05-28 Ebara Corp 基板洗浄装置
JP2014175532A (ja) * 2013-03-11 2014-09-22 Tokyo Electron Ltd 基板処理装置及び基板処理方法
KR101485579B1 (ko) * 2013-10-02 2015-01-22 주식회사 케이씨텍 기판세정장치
JP2015216224A (ja) * 2014-05-09 2015-12-03 東京エレクトロン株式会社 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体
JP2016143790A (ja) * 2015-02-03 2016-08-08 東京エレクトロン株式会社 基板液処理装置及び基板液処理方法

Also Published As

Publication number Publication date
JP6925185B2 (ja) 2021-08-25
TW201906671A (zh) 2019-02-16
TWI720321B (zh) 2021-03-01
JP2019012768A (ja) 2019-01-24

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