TWI720321B - 基板處理裝置 - Google Patents
基板處理裝置 Download PDFInfo
- Publication number
- TWI720321B TWI720321B TW107120977A TW107120977A TWI720321B TW I720321 B TWI720321 B TW I720321B TW 107120977 A TW107120977 A TW 107120977A TW 107120977 A TW107120977 A TW 107120977A TW I720321 B TWI720321 B TW I720321B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- gap
- processing apparatus
- facing
- outer peripheral
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 428
- 230000002093 peripheral effect Effects 0.000 claims abstract description 93
- 239000007788 liquid Substances 0.000 claims abstract description 57
- 230000007246 mechanism Effects 0.000 claims description 45
- 238000002347 injection Methods 0.000 claims description 35
- 239000007924 injection Substances 0.000 claims description 35
- 238000011010 flushing procedure Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 14
- 101150038956 cup-4 gene Proteins 0.000 description 32
- 238000011282 treatment Methods 0.000 description 12
- 239000003595 mist Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-128692 | 2017-06-30 | ||
JP2017128692A JP6925185B2 (ja) | 2017-06-30 | 2017-06-30 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201906671A TW201906671A (zh) | 2019-02-16 |
TWI720321B true TWI720321B (zh) | 2021-03-01 |
Family
ID=64741563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107120977A TWI720321B (zh) | 2017-06-30 | 2018-06-19 | 基板處理裝置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6925185B2 (fr) |
TW (1) | TWI720321B (fr) |
WO (1) | WO2019003815A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7242392B2 (ja) * | 2019-04-16 | 2023-03-20 | 東京エレクトロン株式会社 | 基板処理装置 |
JP7530846B2 (ja) | 2021-02-19 | 2024-08-08 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200922701A (en) * | 2007-10-17 | 2009-06-01 | Ebara Corp | Substrate cleaning apparatus |
US20140251539A1 (en) * | 2013-03-11 | 2014-09-11 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
TW201709261A (zh) * | 2015-02-03 | 2017-03-01 | Tokyo Electron Ltd | 基板液處理裝置及基板液處理方法 |
TWI582886B (zh) * | 2016-01-12 | 2017-05-11 | 弘塑科技股份有限公司 | 單晶圓溼式處理裝置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101485579B1 (ko) * | 2013-10-02 | 2015-01-22 | 주식회사 케이씨텍 | 기판세정장치 |
JP6329428B2 (ja) * | 2014-05-09 | 2018-05-23 | 東京エレクトロン株式会社 | 基板処理装置、基板処理装置の付着物除去方法、及び記憶媒体 |
JP6347752B2 (ja) * | 2015-02-03 | 2018-06-27 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法 |
-
2017
- 2017-06-30 JP JP2017128692A patent/JP6925185B2/ja active Active
-
2018
- 2018-06-04 WO PCT/JP2018/021417 patent/WO2019003815A1/fr active Application Filing
- 2018-06-19 TW TW107120977A patent/TWI720321B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200922701A (en) * | 2007-10-17 | 2009-06-01 | Ebara Corp | Substrate cleaning apparatus |
US20140251539A1 (en) * | 2013-03-11 | 2014-09-11 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
TW201709261A (zh) * | 2015-02-03 | 2017-03-01 | Tokyo Electron Ltd | 基板液處理裝置及基板液處理方法 |
TWI582886B (zh) * | 2016-01-12 | 2017-05-11 | 弘塑科技股份有限公司 | 單晶圓溼式處理裝置 |
Also Published As
Publication number | Publication date |
---|---|
TW201906671A (zh) | 2019-02-16 |
JP2019012768A (ja) | 2019-01-24 |
WO2019003815A1 (fr) | 2019-01-03 |
JP6925185B2 (ja) | 2021-08-25 |
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