WO2018233347A1 - 显示面板及其制造方法和控制方法 - Google Patents

显示面板及其制造方法和控制方法 Download PDF

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Publication number
WO2018233347A1
WO2018233347A1 PCT/CN2018/082187 CN2018082187W WO2018233347A1 WO 2018233347 A1 WO2018233347 A1 WO 2018233347A1 CN 2018082187 W CN2018082187 W CN 2018082187W WO 2018233347 A1 WO2018233347 A1 WO 2018233347A1
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Prior art keywords
layer
flexible
hardness
variable material
display panel
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PCT/CN2018/082187
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English (en)
French (fr)
Inventor
徐元杰
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Priority to US16/099,422 priority Critical patent/US11239450B2/en
Publication of WO2018233347A1 publication Critical patent/WO2018233347A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10128—Display
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Definitions

  • Embodiments of the present disclosure relate to the field of display technologies, and in particular, to a display panel, a manufacturing method thereof, and a control method.
  • an anisotropic conductive film is generally used to bond an integrated circuit (IC) chip to a substrate of a display panel.
  • ACF anisotropic conductive film
  • Embodiments of the present disclosure provide a display panel, a method of manufacturing the same, and a control method.
  • a method of fabricating a display panel includes providing a layer of a variable hardness material and a flexible layer on the layer of hardness variable material; and bonding a chip to the flexible layer.
  • the hardness variable material layer is set to a hard state before the chip is bonded on the flexible layer.
  • the hardness variable material layer is peeled off after the chip is bonded on the flexible layer.
  • the hardness variable material layer is set to a flexible state before peeling off the hardness variable material layer.
  • the hardness variable material layer is a composite material including a wax and a polyurethane foam.
  • the hardness variable material layer is changed to a flexible state by heating.
  • the heating is performed by a wire embedded in the layer of hardness variable material.
  • providing the hardness variable material layer and the flexible layer on the hardness variable material layer include sequentially forming the hardness variable material layer and the substrate on a hard substrate a flexible layer; setting the hardness variable material layer to a flexible state; and peeling the hard substrate.
  • providing the hardness variable material layer and the flexible layer on the hardness variable material layer further includes: setting between the hardness variable material layer and the flexible layer heat insulation.
  • the method further includes bonding a flexible printed circuit board to the flexible layer after bonding the chip to the flexible layer.
  • the flexible layer includes a base layer and a display layer.
  • the base layer comprises a polyimide film.
  • the joining is performed at a temperature greater than 180 ° C and a pressure greater than 60 MPa.
  • a display panel includes a layer of a variable hardness material.
  • the display panel further includes: a flexible layer on the layer of the variable hardness material; and a chip on the flexible layer.
  • the hardness variable material layer is a composite material including a wax and a polyurethane foam.
  • the hardness variable material layer further includes a wire embedded in the hardness variable material layer.
  • a method for controlling a display panel described in the second aspect of the present disclosure includes: setting a hardness variable material layer to a hard state to set the display panel as a hard display panel; or setting the hardness variable material layer to a flexible state, thereby displaying the display The panel is set to a flexible display panel.
  • FIG. 1 is a flow chart of a method of manufacturing a display panel in accordance with an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of forming an optional thermal barrier layer of a method of fabricating a display panel in accordance with an embodiment of the present disclosure
  • FIG. 3 is a schematic structural view of a layer of a variable hardness material in a display panel according to an embodiment of the present disclosure
  • FIG. 4 is a schematic view of forming a flexible layer of a method of manufacturing a display panel according to an embodiment of the present disclosure
  • FIG. 5 is a schematic diagram of a bonding chip and a flexible printed circuit board of a method of manufacturing a display panel according to an embodiment of the present disclosure
  • FIG. 6 is a schematic view of a peeling hardness variable material layer and an optional heat insulating layer of a method of manufacturing a display panel according to an embodiment of the present disclosure
  • FIG. 7 is a flowchart of a method of manufacturing a display panel according to another embodiment of the present disclosure.
  • FIG. 8 is a schematic diagram of forming a hardness variable material layer, an optional heat insulating layer, and a flexible layer in a method of manufacturing a display panel according to another embodiment of the present disclosure
  • FIG. 9 is a schematic view of a peel-off hard substrate of a method of manufacturing a display panel according to another embodiment of the present disclosure.
  • FIG. 10 is a schematic view of a cross section of a display panel according to an embodiment of the present disclosure.
  • an element or layer when an element or layer is referred to as being “on” another element or layer, it may be directly on the other element or layer, or an element or layer may be present; likewise, when the element or layer is When the other element or layer is "under”, it may be directly under the other element or layer, or there may be at least one intermediate element or layer; when the element or layer is referred to as being between two or two layers It may be a single element or layer between two or two layers, or more than one intermediate element or layer may be present.
  • a method of bonding an IC chip on a flexible layer includes: forming a flexible layer on a hard substrate such as a glass substrate; peeling the flexible layer from the hard substrate; and an IC chip and a flexible printed circuit board (Flexible Printed Circuit, Referred to as FPC), it is bonded to the flexible layer.
  • FPC Flexible Printed Circuit
  • the IC chip may sink into the flexible layer, causing the flexible layer to sink and warp, thereby resulting in flexibility.
  • the pad at the corresponding position of the layer is broken, thereby affecting the electrical connection of the IC chip to the pad.
  • the sinking and warpage of the flexible layer due to the bonding of the IC chip may adversely affect the bonding of the FPC.
  • a method for manufacturing a display panel in which a layer of a variable hardness material is employed as a substrate forming each functional layer. Since the hardness variable material layer can be switched between a hard state and a flexible state, the method according to an embodiment of the present disclosure can prevent warping and sinking of the flexible layer caused when the IC chip is bonded, when manufacturing the flexible display panel.
  • FIG. 1 is a flow chart of a method of manufacturing a display panel in accordance with an embodiment of the present disclosure.
  • the embodiment of the present disclosure may provide an optional step S101 in which an optional heat insulating layer is formed on the hardness variable material layer.
  • Figure 2 further shows a schematic representation of the formation of an optional insulating layer 2.
  • the optional heat insulating layer 2 can prevent not only heat generated when the layer of the variable hardness material is heated from being transferred to the subsequently formed flexible layer (which will be described later) but also can be prevented from being generated when the IC chip is bonded to the flexible layer.
  • the optional insulating layer 2 may be flexible. It should be understood that this optional insulating layer 2 is not required in accordance with embodiments of the present disclosure, and the optional insulating layer 2 may be omitted.
  • FIG. 3 is a schematic structural view of an exemplary hardness-variable material layer 1 in accordance with an embodiment of the present disclosure.
  • the hardness variable material layer 1 has a lattice structure including a composite material of a grid-forming polyurethane foam 31 and a wax 32 of a polyurethane foam 31 covering the grid.
  • the hardness variable material layer 1 further includes a wire 33 embedded therein.
  • the wire 33 may also be formed in a lattice structure and nested with a lattice structure of a layer of a variable hardness material.
  • the wire 33 may be copper or aluminum.
  • the hardness variable material layer may be formed by immersing a common polyurethane foam into a molten wax to form a mixture; forming the above mixture into a grid structure by a 3D printing technique; and on a grid structure Form a copper wire.
  • the hardness variable material layer 1 can be changed from a hard state to a flexible state by heating the wire 33, and the hardness variable material layer 1 can be changed from a flexible state to a hard state by cooling. It should be understood that the present disclosure is not limited to the specific composition of the hardness-variable material and the mechanism for changing the hardness, and any suitable hardness-variable material can be used in the present disclosure.
  • a flexible layer is formed on the layer of hardness variable material or on an optional insulating layer (when present).
  • FIG. 4 further illustrates a schematic diagram of forming a flexible layer 34.
  • a flexible layer 34 is formed on the optional insulating layer 2.
  • the flexible layer 34 may include a base layer 3 and a display layer 4.
  • the base layer 3 may include a polyimide film.
  • the display layer 4 may be an OLED display layer or an LCD display layer, which is not limited by the embodiments of the present disclosure.
  • step S103 the IC chip and the FPC are bonded to the flexible layer.
  • FIG. 5 further shows a schematic diagram of bonding an IC chip and an FPC.
  • the IC chip and the FPC are bonded to the flexible layer 34, respectively.
  • the order of bonding the IC chip and the FPC is not specifically limited.
  • an electrical connection can be made between the IC chip and the FPC according to actual functional needs.
  • an IC chip and FPC bonding are performed using a hot pressing process.
  • the joining process conditions are: a temperature greater than 180 ° C and a pressure greater than 60 MPa.
  • the hardness variable material layer 1 and the optional heat insulating layer 2 may not be peeled off after bonding the IC chip and the FPC.
  • the hardness variable material layer 1 is not heated to facilitate detection, assembly, transportation, and the like of the display panel.
  • the hardness variable material layer 1 may be heated to make the hardness variable material layer 1 into a flexible state, thereby facilitating bending or winding of the display panel. Therefore, since the display panel manufactured by the steps S101 to S103 shown in FIG. 1 includes the hardness variable material layer, the display panel is a display panel that can be switched between a hard state and a flexible state.
  • the hardness variable material layer 1 and the optional heat insulating layer 2 may be peeled off after bonding the IC chip and the FPC.
  • step S104 and step S105 in the broken line frame are steps of peeling off the hardness variable material layer 1 and the optional heat insulating layer 2.
  • step S104 and step S105 are optional steps.
  • the hardness variable material layer is set to a flexible state.
  • the hard variable material layer can be changed from a hard state to a flexible state by heating.
  • step S105 the layer of hardness variable material and the optional insulating layer are peeled off.
  • Figure 6 further illustrates a schematic of a layer of peeling hardness variable material and an optional insulating layer. Since the hardness variable material layer is in a flexible state, the hardness variable material layer and the optional heat insulating layer can be easily peeled off, thereby obtaining a display panel which can be only in a flexible state.
  • FIG. 7 is a flowchart of a method of manufacturing a display panel according to another embodiment of the present disclosure. As shown in FIG. 7, in step S701, a layer of a variable hardness material, an optional heat insulating layer, and a flexible layer are sequentially formed on the hard substrate.
  • FIG. 8 further shows a schematic view of sequentially forming the variable hardness material layer 1, the optional heat insulating layer 2, and the flexible layer 34 on the hard substrate 10.
  • the hard substrate 10 may be a rigid substrate such as glass to support the hard variable material layer 1, the optional heat insulating layer 2, and the flexible layer 34 formed thereon, thereby Guarantee film quality.
  • the description of the variable hardness material layer 1, the optional heat insulating layer 2, and the flexible layer 34 is as described above, and will not be described herein.
  • the hardness variable material layer is set to a flexible state.
  • the hardness variable material layer 1 can be made into a flexible state by heating the wire embedded in the hardness variable material layer 1.
  • step S703 the hard substrate is peeled off.
  • Figure 9 further shows a schematic of the peeling of the hard substrate.
  • the hardness variable material layer is in a flexible state
  • the hardness variable material layer, the optional heat insulating layer, and the flexible layer can be easily peeled off from the hard substrate, in other words, the hard lining is provided. Bottom peeling. This is because if the hard substrate is peeled off after bonding the IC chip and the FPC, the connection between the display panel IC chip and the FPC and the flexible layer is affected, thereby affecting the display effect of the flexible display panel.
  • step S704 the hardness variable material layer is set to a hard state.
  • the hardness variable material layer 1 can be cooled to be converted into a hard state.
  • the hard variable material layer 1 is placed in a hard state, and the flexible layer 34 can be effectively supported when the IC chip and the FPC are bonded to the flexible layer 34, so that the flexible layer caused by bonding the IC chip and the FPC can be prevented. Warping and sinking.
  • step S705 the IC chip and the FPC are bonded to the flexible layer.
  • Step S705 in FIG. 7 is similar to step S103 in FIG. 1, and details are not described herein again.
  • step S706 and step S707 in the broken line frame are steps of peeling off the hardness variable material layer 1 and the optional heat insulating layer 2. It should be noted that step S706 and step S707 are optional steps. Steps S706 and S707 in FIG. 7 are similar to steps S104 and S105 in FIG. 1, and are not described herein again.
  • a display panel is also provided.
  • the display panel includes a layer of variable hardness material to enable the display panel to transition between a hard state and a flexible state.
  • FIG. 10 is a schematic diagram of a cross section of a display panel 100 in accordance with an embodiment of the present disclosure.
  • the display panel 100 includes a layer of hardness-variable material 1, an optional insulating layer 2 on the layer of hardness-variable material 1, a flexible layer 34 on the optional insulating layer 2, and a bonding layer to IC chip and FPC on flexible layer 34.
  • the hardness variable material layer 1 can be switched between a hard state and a flexible state. Specifically, the hardness variable material layer 1 can be changed from a hard state to a flexible state by heating. Further, the hardness variable material layer 1 can be changed from a flexible state to a hard state by cooling.
  • the flexible layer 34 may include a base layer 3 and a display layer 4. As an example, the base layer 3 may include a polyimide film.
  • the display layer 4 may be an OLED display layer or an LCD display layer, which is not specifically limited herein. It should be noted that other descriptions regarding the hardness variable material layer 1, the optional heat insulating layer 2, the flexible layer 34, and the IC chip and the FPC are similar to the above embodiments, and are not described herein again.
  • a method of controlling the above display panel includes setting the hardness variable material layer to a hard state to set the display panel as a hard display panel, or setting the hardness variable material layer to a flexible state, thereby setting the display panel as a flexible display panel.
  • the layer of the variable hardness material can be converted into a flexible state by heating it.
  • the flexible display panel when the flexible display panel is manufactured, by providing the hardness variable material layer, warping and sinking of the flexible layer caused by bonding the IC chip are avoided when the IC chip is bonded onto the flexible layer To ensure the quality of the product. Further, the method of preparing the variable hardness material layer is simple, and the variable hardness material can be reused, saving cost.

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Abstract

本公开的实施例涉及一种用于制造显示面板的方法。所述方法包括：提供硬度可变材料层以及位于所述硬度可变材料层上的柔性层；以及将芯片接合在所述柔性层上。在将所述芯片接合在所述柔性层上之前，将所述硬度可变材料层设置为硬质状态。在将所述芯片接合在所述柔性层上之后，剥离所述硬度可变材料层。在剥离所述硬度可变材料层之前，将所述硬度可变材料层设置为柔性状态。

Description

显示面板及其制造方法和控制方法
相关申请的交叉引用
本申请要求于2017年6月21日递交的中国专利申请第201710475919.X号优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及显示技术领域，尤其涉及一种显示面板及其制造方法和控制方法。
背景技术
在制造显示面板时，一般使用各向异性导电膜(Anisotropic Conductive Film，简称ACF)来将集成电路(Integrated Circuit，简称IC)芯片接合在显示面板的基底上。然而，使用ACF技术在柔性显示面板(例如，柔性AMOLED)的基底上进行IC芯片接合与在硬质基底上进行IC芯片接合相比存在很大不同。
发明内容
本公开的实施例提供了一种显示面板及其制造方法和控制方法。
根据本公开的第一方面，提供了一种显示面板的制造方法。所述方法包括：提供硬度可变材料层以及位于所述硬度可变材料层上的柔性层；以及将芯片接合在所述柔性层上。
在本公开的实施例中，在将所述芯片接合在所述柔性层上之前，将所述硬度可变材料层设置为硬质状态。
在本公开的实施例中，在将所述芯片接合在所述柔性层上之后，剥离所述硬度可变材料层。
在本公开的实施例中，在剥离所述硬度可变材料层之前，将所述硬度 可变材料层设置为柔性状态。
在本公开的实施例中，所述硬度可变材料层为包括蜡和聚氨酯泡沫的复合材料。
在本公开的实施例中，通过加热使所述硬度可变材料层变为柔性状态。
在本公开的实施例中，通过嵌入所述硬度可变材料层中的金属丝进行所述加热。
在本公开的实施例中，提供所述硬度可变材料层以及位于所述硬度可变材料层上的所述柔性层包括：在硬质衬底上依次形成所述硬度可变材料层和所述柔性层；将所述硬度可变材料层设置为柔性状态；以及将所述硬质衬底剥离。
在本公开的实施例中，提供所述硬度可变材料层以及位于所述硬度可变材料层上的所述柔性层还包括：在所述硬度可变材料层与所述柔性层之间设置隔热层。
在本公开的实施例中，所述方法还包括：在将所述芯片接合在所述柔性层上之后，将柔性印刷电路板接合在所述柔性层上。
在本公开的实施例中，所述柔性层包括基底层和显示层。
在本公开的实施例中，所述基底层包括聚酰亚胺薄膜。
在本公开的实施例中，在大于180℃的温度和大于60MPa的压力下进行所述接合。
根据本公开的第二方面，提供了一种显示面板。所述显示面板包括硬度可变材料层。
在本公开的实施例中，所述显示面板还包括：位于所述硬度可变材料层上的柔性层；以及位于所述柔性层上的芯片。
在本公开的实施例中，所述硬度可变材料层为包括蜡和聚氨酯泡沫的复合材料。
在本公开的实施例中，所述硬度可变材料层还包括嵌入所述硬度可变材料层中的金属丝。
根据本公开的第三方面，提供了一种用于控制在本公开的第二方面中描述的显示面板的方法。所述控制方法包括：将硬度可变材料层设置为硬质状态，从而将所述显示面板设置为硬质显示面板；或者将所述硬度可变材料层设置为柔性状态，从而将所述显示面板设置为柔性显示面板。
适应性的进一步的方面和范围从本文中提供的描述变得明显。应当理解，本申请的各个方面可以单独或者与一个或多个其他方面组合实施。还应当理解，本文中的描述和特定实施例旨在仅说明的目的并不旨在限制本申请的范围。
附图说明
本文中描述的附图用于仅对所选择的实施例的说明的目的，并不是所有可能的实施方式，并且不旨在限制本申请的范围，其中：
图1是根据本公开实施例的制造显示面板的方法的流程图；
图2是根据本公开实施例的制造显示面板的方法的形成可选的隔热层的示意图；
图3是根据本公开实施例的显示面板中的硬度可变材料层的结构示意图；
图4是根据本公开实施例的制造显示面板的方法的形成柔性层的示意图；
图5是根据本公开实施例的制造显示面板的方法的接合芯片和柔性印刷电路板的示意图；
图6是根据本公开实施例的制造显示面板的方法的剥离硬度可变材料层和可选的隔热层的示意图；
图7是根据本公开另一实施例的制造显示面板的方法的流程图；
图8是根据本公开另一实施例的制造显示面板的方法的形成硬度可变材料层、可选的隔热层以及柔性层的示意图；
图9是根据本公开另一实施例的制造显示面板的方法的剥离硬质衬底 的示意图；以及
图10是根据本公开实施例的显示面板的截面的示意图。
贯穿这些附图的各个视图，相应的参考编号指示相应的部件或特征。
具体实施方式
首先，需要说明的是，除非上下文中另外明确地指出，否则在本文和所附权利要求中所使用的词语的单数形式包括复数，反之亦然。因而，当提及单数时，通常包括相应术语的复数。相似地，措辞“包含”和“包括”将解释为包含在内而不是独占性地。同样地，术语“包括”和“或”应当解释为包括在内的，除非本文中另有说明。在本文中使用术语“实例”之处，特别是当其位于一组术语之后时，所述“实例”仅仅是示例性的和阐述性的，且不应当被认为是独占性的或广泛性的。
另外，还需要说明的是，在本公开的描述中，术语“上”、“之上”、“下”、“之下”、“顶”、“底”、“之间”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。此外，当元件或层被称为在另一元件或层“上”时，它可以直接在该另一元件或层上，或者可以存在中间的元件或层；同样，当元件或层被称为在另一元件或层“下”时，它可以直接在该另一元件或层下，或者可以存在至少一个中间的元件或层；当元件或层被称为在两元件或两层“之间”时，其可以为该两元件或两层之间的唯一的元件或层，或者可以存在一个以上的中间元件或层。
本公开中描绘的流程图仅仅是一个例子。在不脱离本公开精神的情况下，可以存在该流程图或其中描述的步骤的很多变型。例如，所述步骤可以以不同的顺序进行，或者可以添加、删除或者修改步骤。这些变型都被认为是所要求保护的方面的一部分。
现将参照附图更全面地描述示例性的实施例。
目前，在柔性层上接合IC芯片的方法包括：在诸如玻璃基底的硬质基底上制作柔性层；将柔性层从硬质基底上剥离；以及将IC芯片和柔性印刷电路板(Flexible Printed Circuit，简称FPC)接合在柔性层上。然而，由于 IC芯片与柔性层的硬度不同，当采用热压工艺将IC芯片接合到柔性层上时，IC芯片会陷入柔性层中，导致柔性层产生下沉和翘曲，进而导致形成在柔性层相应位置处的衬垫破损，从而影响IC芯片与该衬垫的电连接。此外，在将IC芯片和FPC依次接合到柔性层的情况下，因接合IC芯片导致的柔性层的下沉和翘曲，由此会不利地影响FPC的接合。
在本公开的实施例中，提供了一种用于制造显示面板的方法，其中采用硬度可变材料层作为形成各功能层的基板。由于硬度可变材料层可以在硬质状态与柔性状态之间转换，在制造柔性显示面板时，根据本公开实施例的方法能够防止在接合IC芯片时造成的柔性层的翘曲和下沉。
图1是根据本公开实施例的制造显示面板的方法的流程图。如图1所示，在通过热量来改变硬度可变材料层的硬度的情况下，本公开的实施例可以提供可选的步骤S101，其中在硬度可变材料层上形成可选的隔热层。图2进一步示出了形成可选的隔热层2的示意图。该可选的隔热层2不仅能够防止在加热硬度可变材料层时产生的热量传递到随后形成的柔性层(将在下文中描述)上，而且能够防止在将IC芯片接合到柔性层时产生的热量传递到硬度可变材料层而不利地影响硬度可变材料层的硬度。根据本公开的一个实施例，可选的隔热层2可为柔性的。应理解，根据本公开的实施例，该可选的隔热层2并不是必需的，也可以略去该可选的隔热层2。
图3是根据本公开实施例的一种示例性硬度可变材料层1的结构示意图。如图3所示，该硬度可变材料层1具有栅格结构，其包括形成栅格的聚氨酯泡沫31和覆盖栅格的聚氨酯泡沫31的蜡32的复合材料。此外，硬度可变材料层1还包括嵌入在其中的金属丝33。根据本公开的实施例，金属丝33同样可以形成为栅格结构，并与硬度可变材料层的栅格结构嵌套在一起。根据本公开的实施例，金属丝33可以为铜或铝。示例性地，该硬度可变材料层可以通过以下步骤形成：将普通的聚氨酯泡沫浸入到熔化的蜡中以形成混合物；通过3D打印技术将上述混合物形成为栅格结构；以及在栅格结构上形成铜线。具体地，可以通过对金属丝33进行加热而使硬度 可变材料层1由硬质状态转变为柔性状态，以及通过冷却而使硬度可变材料层1由柔性状态转变为硬质状态。应当理解，本公开对硬度可变材料的具体组成和用于改变硬度的机理并没有限制，任何适宜的硬度可变材料都可以用于本公开。
如图1所示，在步骤S102中，在硬度可变材料层上或在可选的隔热层(当存在时)上形成柔性层。图4进一步示出了形成柔性层34的示意图。
如图4所示，在可选的隔热层2上形成柔性层34。在本公开的实施例中，柔性层34可以包括基底层3和显示层4。作为一个示例，基底层3可以包括聚酰亚胺膜。显示层4可以为OLED显示层或LCD显示层，本公开的实施例对此不作限制。
如图1所示，在步骤S103中，将IC芯片和FPC接合到柔性层上。图5进一步示出了接合IC芯片和FPC的示意图。
如图5所示，将IC芯片和FPC分别接合到柔性层34上。在本公开的实施例中，对接合IC芯片和FPC的先后顺序不作具体限定。
作为一个示例，可以根据实际功能需要，在IC芯片与FPC之间实现电连接。
在本公开的实施例中，使用热压工艺进行IC芯片和FPC接合。作为一个示例，接合的工艺条件为：温度大于180℃，压力大于60MPa。
一方面，在本公开的实施例中，在接合IC芯片和FPC之后，可以不剥离硬度可变材料层1和可选的隔热层2。当在后续处理工艺中需要硬度可变材料层1处于硬质状态时，不对硬度可变材料层1进行加热，以便于对显示面板进行检测、组装、运输等。当需要硬度可变材料层1处于柔性状态时，可以对硬度可变材料层1进行加热，以使硬度可变材料层1变为柔性状态，从而便于弯曲或卷绕显示面板。因此，由于通过图1所示的步骤S101至步骤S103制造出的显示面板包括硬度可变材料层，所以该显示面板为可在硬质状态与柔性状态之间转换的显示面板。
另一方面，在本公开的实施例中，在接合IC芯片和FPC之后，也可 以将硬度可变材料层1和可选的隔热层2剥离。如图1所示，虚线框中的步骤S104和步骤S105为剥离硬度可变材料层1和可选的隔热层2的步骤。需要说明的是，步骤S104和步骤S105为可选步骤。在步骤S104中，将硬度可变材料层设置为柔性状态。例如，可以通过对硬度可变材料层进行加热而使其从硬质状态转变为柔性状态。在步骤S105中，剥离硬度可变材料层和可选的隔热层。图6进一步示出了剥离硬度可变材料层和可选的隔热层的示意图。由于硬度可变材料层处于柔性状态，所以可以将硬度可变材料层和可选的隔热层容易地剥离，从而获得仅可处于柔性状态的显示面板。
图7是根据本公开另一实施例的制造显示面板的方法的流程图。如图7所示，在步骤S701中，在硬质衬底上依次形成硬度可变材料层、可选的隔热层以及柔性层。图8进一步示出了在硬质衬底10上依次形成硬度可变材料层1、可选的隔热层2以及柔性层34的示意图。
在本公开的实施例中，硬质衬底10可以为诸如玻璃等的硬质基板，以支撑在其上形成的硬度可变材料层1、可选的隔热层2和柔性层34，从而保证成膜质量。对硬度可变材料层1、可选的隔热层2和柔性层34的描述如前所述，在此不再赘述。
如图7所示，在步骤S702中，将硬度可变材料层设置为柔性状态。例如，可以通过对硬度可变材料层1中嵌入的金属丝加热而使硬度可变材料层1变为柔性状态。
如图7所示，在步骤S703中，剥离硬质衬底。图9进一步示出了剥离硬质衬底的示意图。如图9所示，由于硬度可变材料层处于柔性状态，所以可以容易地将硬度可变材料层、可选的隔热层和柔性层从硬质衬底上剥离，换言之，将硬质衬底剥离。这样做是因为，如果在接合IC芯片和FPC之后再剥离硬质衬底会影响显示面板IC芯片和FPC与柔性层的连接，从而影响柔性显示面板的显示效果。
如图7所示，在步骤S704中，将硬度可变材料层设置为硬质状态。如 前所述，可以冷却硬度可变材料层1而使其转变为硬质状态。使硬度可变材料层1处于硬质状态，能够在将IC芯片和FPC接合到柔性层34上时为柔性层34提供有效的支撑，从而可以防止因接合IC芯片和FPC所造成的柔性层的翘曲和下沉。
如图7所示，在步骤S705中，将IC芯片和FPC接合到柔性层上。图7中的步骤S705与图1中的步骤S103类似，在此不再赘述。
与上述实施例类似，在接合IC芯片和FPC之后，可以不剥离硬度可变材料层1和可选的隔热层2，从而得到可在硬质状态与柔性状态之间转换的显示面板。另一方面，在接合IC芯片和FPC之后，也可以将硬度可变材料层1和可选的隔热层2剥离，从而获得仅可处于柔性状态的显示面板。如图7所示，虚线框中的步骤S706和步骤S707为剥离硬度可变材料层1和可选的隔热层2的步骤。需要说明的是，步骤S706和步骤S707为可选步骤。图7中的步骤S706和步骤S707与图1中的步骤S104和S105类似，在此不再赘述。
在本公开的实施例中，还提供了一种显示面板。该显示面板包括硬度可变材料层，从而使显示面板能够在硬质状态与柔性状态之间转换。
图10根据本公开实施例的显示面板100的截面的示意图。如图10所示，显示面板100包括硬度可变材料层1、位于硬度可变材料层1上的可选的隔热层2、位于可选的隔热层2上的柔性层34以及接合到柔性层34上的IC芯片和FPC。
如上所述，硬度可变材料层1可以在硬质状态与柔性状态之间转换。具体地，可以通过加热而使硬度可变材料层1由硬质状态转变为柔性状态。另外，可以通过冷却而使硬度可变材料层1由柔性状态转变为硬质状态。柔性层34可以包括基底层3和显示层4。作为一个示例，基底层3可以包括聚酰亚胺膜。显示层4可以为OLED显示层或LCD显示层，在此不作具体限定。需要说明的是，关于硬度可变材料层1、可选的隔热层2、柔性层34以及IC芯片和FPC的其他描述与上述实施例类似，在此不再赘述。
在本公开的实施例中，还提供了一种控制上述显示面板的方法。该控制方法包括：将硬度可变材料层设置为硬质状态，从而将显示面板设置为硬质显示面板；或者将硬度可变材料层设置为柔性状态，从而将显示面板设置为柔性显示面板。例如，可以通过对硬度可变材料层进行加热而使其转变为柔性状态。
在本公开的实施例中，在制造柔性显示面板时，通过设置硬度可变材料层，使得在将IC芯片接合到柔性层上时，避免由接合IC芯片导致的柔性层的翘曲和下沉，从而保证产品的质量。此外，制备硬度可变材料层的方法简单，并且硬度可变材料可以重复使用，节约成本。
以上为了说明和描述的目的提供了实施例的前述描述。其并不旨在是穷举的或者限制本申请。特定实施例的各个元件或特征通常不限于特定的实施例，但是，在合适的情况下，这些元件和特征是可互换的并且可用在所选择的实施例中，即使没有具体示出或描述。同样也可以以许多方式来改变。这种改变不能被认为脱离了本申请，并且所有这些修改都包含在本申请的范围内。

Claims (16)

  1. 一种用于制造显示面板的方法，包括：
    提供硬度可变材料层以及位于所述硬度可变材料层上的柔性层；以及
    将芯片接合在所述柔性层上。
  2. 根据权利要求1所述的方法，其中，在将所述芯片接合在所述柔性层上之前，将所述硬度可变材料层设置为硬质状态。
  3. 根据权利要求1所述的方法，还包括：在将所述芯片接合在所述柔性层上之后，剥离所述硬度可变材料层。
  4. 根据权利要求3所述的方法，其中，在剥离所述硬度可变材料层之前，将所述硬度可变材料层设置为柔性状态。
  5. 根据权利要求1-4中任一项所述的方法，其中，所述硬度可变材料层为包括蜡和聚氨酯泡沫的复合材料。
  6. 根据权利要求5所述的方法，其中，通过加热使所述硬度可变材料层变为柔性状态。
  7. 根据权利要求6所述的方法，其中，通过嵌入所述硬度可变材料层中的金属丝进行所述加热。
  8. 根据权利要求1所述的方法，其中，提供所述硬度可变材料层以及位于所述硬度可变材料层上的所述柔性层包括：在硬质衬底上依次形成所述硬度可变材料层和所述柔性层；将所述硬度可变材料层设置为柔性状态；以及将所述硬质衬底剥离。
  9. 根据权利要求1或8所述的方法，其中，提供所述硬度可变材料层以及位于所述硬度可变材料层上的所述柔性层还包括：在所述硬度可变材料层与所述柔性层之间设置隔热层。
  10. 根据权利要求1所述的方法，其中，还包括：在将所述芯片接合在所述柔性层上之后，将柔性印刷电路板接合在所述柔性层上。
  11. 根据权利要求1所述的方法，其中，所述柔性层包括基底层和显示层。
  12. 根据权利要求11所述的方法，其中，所述基底层包括聚酰亚胺膜。
  13. 一种显示面板，包括：
    硬度可变材料层；
    位于所述硬度可变材料层上的柔性层；以及
    位于所述柔性层上的芯片。
  14. 根据权利要求13所述的显示面板，其中，所述硬度可变材料层为包括蜡和聚氨酯泡沫的复合材料。
  15. 根据权利要求14所述的显示面板，其中，所述硬度可变材料层还包括嵌入所述硬度可变材料层中的金属丝。
  16. 根据权利要求13所述的显示面板，其中，所述硬度可变材料层与所述柔性层之间设置有隔热层。
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