WO2018214023A1 - Photopile à hétérojonction à contact arrière et émetteur associé, et procédé de préparation de photopile - Google Patents
Photopile à hétérojonction à contact arrière et émetteur associé, et procédé de préparation de photopile Download PDFInfo
- Publication number
- WO2018214023A1 WO2018214023A1 PCT/CN2017/085484 CN2017085484W WO2018214023A1 WO 2018214023 A1 WO2018214023 A1 WO 2018214023A1 CN 2017085484 W CN2017085484 W CN 2017085484W WO 2018214023 A1 WO2018214023 A1 WO 2018214023A1
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- WO
- WIPO (PCT)
- Prior art keywords
- film
- solar cell
- emitter
- cro
- passivation layer
- Prior art date
Links
- 238000002360 preparation method Methods 0.000 title abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 32
- 229910019923 CrOx Inorganic materials 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 140
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 56
- 238000002161 passivation Methods 0.000 claims description 56
- 229910052710 silicon Inorganic materials 0.000 claims description 56
- 239000010703 silicon Substances 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 41
- 238000000151 deposition Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 230000006798 recombination Effects 0.000 description 14
- 238000005215 recombination Methods 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000002131 composite material Substances 0.000 description 5
- 210000000746 body region Anatomy 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- 239000002360 explosive Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- -1 that is Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
La présente invention se rapporte au domaine technique des photopiles, et concerne un émetteur (4) d'une photopile à hétérojonction à contact arrière, et la photopile à hétérojonction à contact arrière utilisant l'émetteur (4) et son procédé de préparation. L'émetteur (4) comprend au moins une couche de film mince de CrOx de haut en bas. La structure peut améliorer considérablement l'efficacité de la photopile.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE112017007581.5T DE112017007581T5 (de) | 2017-05-23 | 2017-05-23 | Rückkontakt-Heteroübergangssolarzelle und deren Emitter sowie Verfahren zum Herstellen einer Solarzelle |
| PCT/CN2017/085484 WO2018214023A1 (fr) | 2017-05-23 | 2017-05-23 | Photopile à hétérojonction à contact arrière et émetteur associé, et procédé de préparation de photopile |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/085484 WO2018214023A1 (fr) | 2017-05-23 | 2017-05-23 | Photopile à hétérojonction à contact arrière et émetteur associé, et procédé de préparation de photopile |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2018214023A1 true WO2018214023A1 (fr) | 2018-11-29 |
Family
ID=64396122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2017/085484 WO2018214023A1 (fr) | 2017-05-23 | 2017-05-23 | Photopile à hétérojonction à contact arrière et émetteur associé, et procédé de préparation de photopile |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE112017007581T5 (fr) |
| WO (1) | WO2018214023A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114914330A (zh) * | 2022-05-17 | 2022-08-16 | 苏州昶明微电子科技合伙企业(有限合伙) | 一种hjt异质结太阳能电池薄膜生产设备及工艺 |
| CN115207134A (zh) * | 2022-07-01 | 2022-10-18 | 中国华能集团清洁能源技术研究院有限公司 | 背接触异质结电池片、光伏组件及其制作方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931243A (zh) * | 2011-08-10 | 2013-02-13 | 无锡尚德太阳能电力有限公司 | 碲化镉薄膜太阳电池及其制备方法 |
| KR20150067782A (ko) * | 2013-12-09 | 2015-06-19 | 주성엔지니어링(주) | 시인성이 향상된 태양 전지 및 그의 제조 방법 |
| CN104916709A (zh) * | 2015-05-29 | 2015-09-16 | 中山大学 | 一种结构为氧化物-金属多层膜/硅基太阳电池 |
| CN104993006A (zh) * | 2015-05-22 | 2015-10-21 | 暨南大学 | 一种过渡金属氧化物-硅异质结太阳能电池及其制备方法 |
| CN105789342A (zh) * | 2016-03-07 | 2016-07-20 | 中山大学 | 一种氧化物-金属多层膜背接触晶体硅太阳电池及其制备方法 |
| CN106024927A (zh) * | 2016-05-26 | 2016-10-12 | 中国科学院宁波材料技术与工程研究所 | 硅基太阳能电池及其制备方法 |
-
2017
- 2017-05-23 DE DE112017007581.5T patent/DE112017007581T5/de active Pending
- 2017-05-23 WO PCT/CN2017/085484 patent/WO2018214023A1/fr active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931243A (zh) * | 2011-08-10 | 2013-02-13 | 无锡尚德太阳能电力有限公司 | 碲化镉薄膜太阳电池及其制备方法 |
| KR20150067782A (ko) * | 2013-12-09 | 2015-06-19 | 주성엔지니어링(주) | 시인성이 향상된 태양 전지 및 그의 제조 방법 |
| CN104993006A (zh) * | 2015-05-22 | 2015-10-21 | 暨南大学 | 一种过渡金属氧化物-硅异质结太阳能电池及其制备方法 |
| CN104916709A (zh) * | 2015-05-29 | 2015-09-16 | 中山大学 | 一种结构为氧化物-金属多层膜/硅基太阳电池 |
| CN105789342A (zh) * | 2016-03-07 | 2016-07-20 | 中山大学 | 一种氧化物-金属多层膜背接触晶体硅太阳电池及其制备方法 |
| CN106024927A (zh) * | 2016-05-26 | 2016-10-12 | 中国科学院宁波材料技术与工程研究所 | 硅基太阳能电池及其制备方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114914330A (zh) * | 2022-05-17 | 2022-08-16 | 苏州昶明微电子科技合伙企业(有限合伙) | 一种hjt异质结太阳能电池薄膜生产设备及工艺 |
| CN115207134A (zh) * | 2022-07-01 | 2022-10-18 | 中国华能集团清洁能源技术研究院有限公司 | 背接触异质结电池片、光伏组件及其制作方法 |
| CN115207134B (zh) * | 2022-07-01 | 2024-01-26 | 中国华能集团清洁能源技术研究院有限公司 | 背接触异质结电池片、光伏组件及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE112017007581T5 (de) | 2020-03-05 |
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