DE112017007581T5 - Rückkontakt-Heteroübergangssolarzelle und deren Emitter sowie Verfahren zum Herstellen einer Solarzelle - Google Patents
Rückkontakt-Heteroübergangssolarzelle und deren Emitter sowie Verfahren zum Herstellen einer Solarzelle Download PDFInfo
- Publication number
- DE112017007581T5 DE112017007581T5 DE112017007581.5T DE112017007581T DE112017007581T5 DE 112017007581 T5 DE112017007581 T5 DE 112017007581T5 DE 112017007581 T DE112017007581 T DE 112017007581T DE 112017007581 T5 DE112017007581 T5 DE 112017007581T5
- Authority
- DE
- Germany
- Prior art keywords
- film
- solar cell
- emitter
- back contact
- heterojunction solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/085484 WO2018214023A1 (fr) | 2017-05-23 | 2017-05-23 | Photopile à hétérojonction à contact arrière et émetteur associé, et procédé de préparation de photopile |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112017007581T5 true DE112017007581T5 (de) | 2020-03-05 |
Family
ID=64396122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112017007581.5T Pending DE112017007581T5 (de) | 2017-05-23 | 2017-05-23 | Rückkontakt-Heteroübergangssolarzelle und deren Emitter sowie Verfahren zum Herstellen einer Solarzelle |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE112017007581T5 (fr) |
| WO (1) | WO2018214023A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114914330A (zh) * | 2022-05-17 | 2022-08-16 | 苏州昶明微电子科技合伙企业(有限合伙) | 一种hjt异质结太阳能电池薄膜生产设备及工艺 |
| CN115207134B (zh) * | 2022-07-01 | 2024-01-26 | 中国华能集团清洁能源技术研究院有限公司 | 背接触异质结电池片、光伏组件及其制作方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102931243A (zh) * | 2011-08-10 | 2013-02-13 | 无锡尚德太阳能电力有限公司 | 碲化镉薄膜太阳电池及其制备方法 |
| KR20150067782A (ko) * | 2013-12-09 | 2015-06-19 | 주성엔지니어링(주) | 시인성이 향상된 태양 전지 및 그의 제조 방법 |
| CN104993006B (zh) * | 2015-05-22 | 2017-07-04 | 暨南大学 | 一种过渡金属氧化物‑硅异质结太阳能电池及其制备方法 |
| CN104916709B (zh) * | 2015-05-29 | 2017-08-08 | 中山大学 | 一种结构为氧化物‑金属多层膜/硅基太阳电池 |
| CN105789342B (zh) * | 2016-03-07 | 2018-01-23 | 中山大学 | 一种氧化物‑金属多层膜背接触晶体硅太阳电池及其制备方法 |
| CN106024927B (zh) * | 2016-05-26 | 2018-09-04 | 中国科学院宁波材料技术与工程研究所 | 硅基太阳能电池及其制备方法 |
-
2017
- 2017-05-23 WO PCT/CN2017/085484 patent/WO2018214023A1/fr active Application Filing
- 2017-05-23 DE DE112017007581.5T patent/DE112017007581T5/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018214023A1 (fr) | 2018-11-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed | ||
| R016 | Response to examination communication |