CN114914330A - 一种hjt异质结太阳能电池薄膜生产设备及工艺 - Google Patents

一种hjt异质结太阳能电池薄膜生产设备及工艺 Download PDF

Info

Publication number
CN114914330A
CN114914330A CN202210535015.2A CN202210535015A CN114914330A CN 114914330 A CN114914330 A CN 114914330A CN 202210535015 A CN202210535015 A CN 202210535015A CN 114914330 A CN114914330 A CN 114914330A
Authority
CN
China
Prior art keywords
cavity
solar cell
layer
reverse side
transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210535015.2A
Other languages
English (en)
Inventor
马世猛
代智杰
周广福
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Changhuo Microelectronics Technology Co ltd
Original Assignee
Suzhou Changming Microelectronics Technology Partnership LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Changming Microelectronics Technology Partnership LP filed Critical Suzhou Changming Microelectronics Technology Partnership LP
Priority to CN202210535015.2A priority Critical patent/CN114914330A/zh
Publication of CN114914330A publication Critical patent/CN114914330A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种HJT异质结太阳能电池薄膜生产设备及工艺,包括正面设备组件,所述正面设备组件包括正面进出口腔与正面传输腔,所述正面传输腔侧面设置有正面i层腔与正面P层腔;反面设备组件,所述反面设备组件包括反面进出口腔与反面传输腔,所述反面传输腔侧面设置有反面i层腔与反面N层腔;翻转腔,所述翻转腔将正面传输腔与反面传输腔连接,所述翻转腔内对太阳能电池片进行翻片。本发明能够根据对太阳能电池片的异质结薄膜制备工艺要求,合理配置正面i层腔、正面P层腔、反面i层腔以及反面N层腔的数量,能够使太阳能电池片在镀膜过程中,匹配度更好更高。

Description

一种HJT异质结太阳能电池薄膜生产设备及工艺
技术领域
本发明属于太阳能电池薄膜生产技术领域,尤其涉及一种HJT异质结太阳能电池薄膜生产设备及工艺。
背景技术
HJT异质结太阳能电池的基本原理是在N型硅片基底上采用非晶硅沉积的方式形成异质结并作为钝化层,这种结构的电池开路电压更高,效率也会相应的比较高。而HJT异质结太阳能电池薄膜制备过程复杂,需要多种工艺及相关设备的配合。
目前对于HJT异质结太阳能电池薄膜的制备,电池正面i层及P层镀膜时间较短,而反面i层、N层镀膜时间较长,因在实际生产中电池正反面为分开镀膜,而工艺腔在镀膜时各膜层工艺腔不能通用,导致工艺匹配度不好。
另外电池片正反面分开镀膜,正面镀膜完成后,须返回大气,翻片完成后,再进入设备中进行反面镀膜,导致电池片有一定污染,降低了电池片的光电转换效率。
发明内容
本发明克服了现有技术的不足,提供一种HJT异质结太阳能电池薄膜生产设备及工艺,以解决现有技术中存在的问题。
为达到上述目的,本发明采用的技术方案为:一种HJT异质结太阳能电池薄膜生产设备,包括
正面设备组件,所述正面设备组件包括正面进出口腔与正面传输腔,所述正面传输腔侧面设置有正面i层腔与正面P层腔,所述正面i层腔对太阳能电池片正面进行i层镀膜,所述正面P层腔对太阳能电池片正面进行p层镀膜;
反面设备组件,所述反面设备组件包括反面进出口腔与反面传输腔,所述反面传输腔侧面设置有反面i层腔与反面N层腔,所述反面i层腔对太阳能电池片反面进行i层镀膜,所述反面N层腔对太阳能电池片反面进行N层镀膜;
翻转腔,所述翻转腔将正面传输腔与反面传输腔连接,所述翻转腔内对太阳能电池片进行翻片。
本发明一个较佳实施例中,所述正面进出口腔与所述正面传输腔内部相连通,太阳能电池片经正面进出口腔进入正面传输腔内。
本发明一个较佳实施例中,所述反面进出口腔与所述反面传输腔内部连通,太阳能电池片经反面进出口腔进入反面传输腔内。
本发明一个较佳实施例中,所述正面传输腔与所述反面传输腔内均设置有真空传输手臂,所述真空传输手臂对太阳能电池片进行抓取传输。
本发明一个较佳实施例中,所述正面设备组件、反面设备组件以及翻转腔内均为真空环境。
本发明还公开了一种HJT异质结太阳能电池薄膜生产工艺,包括以下步骤:
S1、将太阳能电池片送入正面进出口腔内,等候加工;
S2、对正面设备组件、反面设备组件以及翻转腔进行全线抽真空,保证各腔室内处于真空状态;
S3、正面传输腔内的真空传输手臂将太阳能电池片依次送入正面i层腔与正面P层腔,对太阳能电池片的正面进行镀膜;
S4、正面传输腔内的真空传输手臂将正面镀膜后的太阳能电池片送入翻转腔内,将处于正面的太阳能电池片翻转为反面;
S5、反面传输腔内的真空传输手臂将处于反面的太阳能电池片依次送入反面i层腔与反面N层腔内,对太阳能电池片的反面进行镀膜;
S6、太阳能电池片反面镀膜完成后,反面传输腔内的真空传输手臂将太阳能电池片传输至反面进出口腔,破真空将太阳能电池片取出即可。
本发明解决了背景技术中存在的缺陷,本发明具备以下有益效果:
(1)本发明能够根据对太阳能电池片的异质结薄膜制备工艺要求,合理配置正面i层腔、正面P层腔、反面i层腔以及反面N层腔的数量,能够使太阳能电池片在镀膜过程中,匹配度更好更高;
(2)在正面设备组件与反面设备组件之间增设翻转腔,并且在操作过程中始终处于真空状态下进行,并未暴露在大气中,能够避免太阳能电池片在翻转过程中受到污染,提高太阳能电池片的光电转换效率。
附图说明
下面结合附图和实施例对本发明进一步说明;
图1为本发明优选实施例的整体结构示意图;
图2为本发明优选实施例的流程图;
具体实施方式
以下将以图式揭露本发明的多个实施方式,为明确说明起见,许多实务上的细节将在以下叙述中一并说明。然而,应了解到,这些实务上的细节不应用以限制本发明。也就是说,在本发明的部分实施方式中,这些实务上的细节是非必要的。此外,为简化图式起见,一些习知惯用的结构与组件在图式中将以简单的示意的方式绘示之。
另外,在本发明中如涉及“第一”、“第二”等的描述仅用于描述目的,并非特别指称次序或顺位的意思,亦非用以限定本发明,其仅仅是为了区别以相同技术用语描述的组件或操作而已,而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外,各个实施例之间的技术方案可以相互结合,但是必须是以本领域普通技术人员能够实现为基础,当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在,也不在本发明要求的保护范围之内。
如图1所示,一种HJT异质结太阳能电池薄膜生产设备,包括
正面设备组件,正面设备组件包括正面进出口腔与正面传输腔,正面传输腔侧面设置有正面i层腔与正面P层腔,正面i层腔对太阳能电池片正面进行i层镀膜,正面P层腔对太阳能电池片正面进行p层镀膜,正面i层腔与正面P层腔的数量可根据异质结薄膜制备工艺要求进行合理配置,加强对太阳能电池片的匹配度。
具体地,正面进出口腔与正面传输腔内部相连通,太阳能电池片经正面进出口腔进入正面传输腔内。
反面设备组件,反面设备组件包括反面进出口腔与反面传输腔,反面传输腔侧面设置有反面i层腔与反面N层腔,反面i层腔对太阳能电池片反面进行i层镀膜,反面N层腔对太阳能电池片反面进行N层镀膜,反面i层腔与反面N层腔的数量可根据异质结薄膜制备工艺要求进行合理配置,加强对太阳能电池片的匹配度。
具体地,反面进出口腔与反面传输腔内部连通,太阳能电池片经反面进出口腔进入反面传输腔内。
翻转腔,翻转腔将正面传输腔与反面传输腔连接,翻转腔内对太阳能电池片进行翻片。
进一步地,在本实施例中,正面传输腔与反面传输腔内均设置有真空传输手臂,真空传输手臂对太阳能电池片进行抓取传输。
在本实施例中,正面设备组件、反面设备组件以及翻转腔内均为真空环境,使太阳能电池片在操作过程中始终处于真空状态下进行,并未暴露在大气中,能够避免太阳能电池片在翻转过程中受到污染,提高太阳能电池片的光电转换效率。
如图2所示,一种HJT异质结太阳能电池薄膜生产工艺,包括以下步骤:
S1、将太阳能电池片送入正面进出口腔内,等候加工;
S2、对正面设备组件、反面设备组件以及翻转腔进行全线抽真空,保证各腔室内处于真空状态;
S3、正面传输腔内的真空传输手臂将太阳能电池片依次送入正面i层腔与正面P层腔,对太阳能电池片的正面进行镀膜;
S4、正面传输腔内的真空传输手臂将正面镀膜后的太阳能电池片送入翻转腔内,将处于正面的太阳能电池片翻转为反面;
S5、反面传输腔内的真空传输手臂将处于反面的太阳能电池片依次送入反面i层腔与反面N层腔内,对太阳能电池片的反面进行镀膜;
S6、太阳能电池片反面镀膜完成后,反面传输腔内的真空传输手臂将太阳能电池片传输至反面进出口腔,破真空将太阳能电池片取出即可。
总而言之,本发明能够根据对太阳能电池片的异质结薄膜制备工艺要求,合理配置正面i层腔、正面P层腔、反面i层腔以及反面N层腔的数量,能够使太阳能电池片在镀膜过程中,匹配度更好更高,而在正面设备组件与反面设备组件之间增设翻转腔,并且在操作过程中始终处于真空状态下进行,并未暴露在大气中,能够避免太阳能电池片在翻转过程中受到污染,提高太阳能电池片的光电转换效率。
以上依据本发明的理想实施例为启示,通过上述的说明内容,相关人员完全可以在不偏离本项发明技术思想的范围内,进行多样的变更以及修改。本项发明的技术性范围并不局限于说明书上的内容,必须要根据权利要求范围来确定技术性范围。

Claims (6)

1.一种HJT异质结太阳能电池薄膜生产设备,其特征在于,包括
正面设备组件,所述正面设备组件包括正面进出口腔与正面传输腔,所述正面传输腔侧面设置有正面i层腔与正面P层腔,所述正面i层腔对太阳能电池片正面进行i层镀膜,所述正面P层腔对太阳能电池片正面进行p层镀膜;
反面设备组件,所述反面设备组件包括反面进出口腔与反面传输腔,所述反面传输腔侧面设置有反面i层腔与反面N层腔,所述反面i层腔对太阳能电池片反面进行i层镀膜,所述反面N层腔对太阳能电池片反面进行N层镀膜;
翻转腔,所述翻转腔将正面传输腔与反面传输腔连接,所述翻转腔内对太阳能电池片进行翻片。
2.根据权利要求1所述的HJT异质结太阳能电池薄膜生产设备,其特征在于,所述正面进出口腔与所述正面传输腔内部相连通,太阳能电池片经正面进出口腔进入正面传输腔内。
3.根据权利要求1所述的HJT异质结太阳能电池薄膜生产设备,其特征在于,所述反面进出口腔与所述反面传输腔内部连通,太阳能电池片经反面进出口腔进入反面传输腔内。
4.根据权利要求1所述的HJT异质结太阳能电池薄膜生产设备,其特征在于,所述正面传输腔与所述反面传输腔内均设置有真空传输手臂,所述真空传输手臂对太阳能电池片进行抓取传输。
5.根据权利要求1所述的HJT异质结太阳能电池薄膜生产设备,其特征在于,所述正面设备组件、反面设备组件以及翻转腔内均为真空环境。
6.一种HJT异质结太阳能电池薄膜生产工艺,应用于权利要求1-5任一所述的HJT异质结太阳能电池薄膜生产设备,其特征在于,包括以下步骤:
S1、将太阳能电池片送入正面进出口腔内,等候加工;
S2、对正面设备组件、反面设备组件以及翻转腔进行全线抽真空,保证各腔室内处于真空状态;
S3、正面传输腔内的真空传输手臂将太阳能电池片依次送入正面i层腔与正面P层腔,对太阳能电池片的正面进行镀膜;
S4、正面传输腔内的真空传输手臂将正面镀膜后的太阳能电池片送入翻转腔内,将处于正面的太阳能电池片翻转为反面;
S5、反面传输腔内的真空传输手臂将处于反面的太阳能电池片依次送入反面i层腔与反面N层腔内,对太阳能电池片的反面进行镀膜;
S6、太阳能电池片反面镀膜完成后,反面传输腔内的真空传输手臂将太阳能电池片传输至反面进出口腔,破真空将太阳能电池片取出即可。
CN202210535015.2A 2022-05-17 2022-05-17 一种hjt异质结太阳能电池薄膜生产设备及工艺 Pending CN114914330A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210535015.2A CN114914330A (zh) 2022-05-17 2022-05-17 一种hjt异质结太阳能电池薄膜生产设备及工艺

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210535015.2A CN114914330A (zh) 2022-05-17 2022-05-17 一种hjt异质结太阳能电池薄膜生产设备及工艺

Publications (1)

Publication Number Publication Date
CN114914330A true CN114914330A (zh) 2022-08-16

Family

ID=82768396

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210535015.2A Pending CN114914330A (zh) 2022-05-17 2022-05-17 一种hjt异质结太阳能电池薄膜生产设备及工艺

Country Status (1)

Country Link
CN (1) CN114914330A (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018214023A1 (zh) * 2017-05-23 2018-11-29 中山大学 背接触异质结太阳电池及其发射极、太阳电池制备方法
CN213388871U (zh) * 2020-08-04 2021-06-08 隆基绿能科技股份有限公司 一种双面镀膜翻片装置及镀膜机
CN114121732A (zh) * 2021-11-26 2022-03-01 苏州昶明微电子科技合伙企业(有限合伙) 一种高效电池生产工艺及设备

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018214023A1 (zh) * 2017-05-23 2018-11-29 中山大学 背接触异质结太阳电池及其发射极、太阳电池制备方法
CN213388871U (zh) * 2020-08-04 2021-06-08 隆基绿能科技股份有限公司 一种双面镀膜翻片装置及镀膜机
CN114121732A (zh) * 2021-11-26 2022-03-01 苏州昶明微电子科技合伙企业(有限合伙) 一种高效电池生产工艺及设备

Similar Documents

Publication Publication Date Title
EP4203081A1 (en) Topcon battery and preparation method therefor, and electrical appliance
AU2006335142B2 (en) Back side contact solar cell structures and fabrication processes
US6500731B1 (en) Process for producing semiconductor device module
CN114678446A (zh) 一种低成本接触钝化全背电极太阳能电池及其制备方法
KR20090011519A (ko) 결정질 실리콘 태양전지와 그 제조방법 및 제조시스템
CN101322251A (zh) 沉积光电元件用的微晶硅层的方法与设备
CN103904155B (zh) 硅基异质结太阳能电池真空处理系统及电池制备方法
CN102482796A (zh) 掺杂的透明导电氧化物
CN113921626A (zh) 一种背接触电池的制作方法
CN115020538B (zh) 一种p型ibc单晶太阳能电池及其制备方法
CN102157585B (zh) 一种均匀浅发射极太阳电池的制备方法
CN111063764A (zh) 一种钝化接触结构的制备方法
EP4379815A1 (en) Solar cell and manufacturing method therefor
CN114823936A (zh) 一种异质结电池及其制备方法
CN114005888A (zh) 一种太阳能电池及其制备方法
EP2884544B1 (en) Solar cell production method
CN115020546A (zh) 双面钝化接触太阳电池及其制备方法
JP4532008B2 (ja) 反射防止膜の成膜方法
CN114914330A (zh) 一种hjt异质结太阳能电池薄膜生产设备及工艺
CN218160392U (zh) 一种太阳能电池
CN115101621B (zh) 一种P-topcon电池及其制备方法
JP2004356397A (ja) 筒状光電変換装置
CN114121732A (zh) 一种高效电池生产工艺及设备
CN115117041A (zh) 金属网格互联层的钙钛矿/晶硅两端机械叠层太阳电池
CN115000057A (zh) 金属网格互联层的钙钛矿/GaAs两端机械叠层太阳电池

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20230703

Address after: 201306 building C, No. 888, Huanhu West 2nd Road, Lingang New District, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai

Applicant after: Shanghai Changhuo Microelectronics Technology Co.,Ltd.

Address before: Room 235, Xingming Building, No. 288, Xingming Street, Suzhou Industrial Park, Suzhou Area, Jiangsu Pilot Free Trade Zone, 215123

Applicant before: Suzhou Changming microelectronics technology partnership (L.P.)

TA01 Transfer of patent application right