WO2018207670A1 - 鎖伸長剤,ポリウレタンとその改質方法,研磨層,研磨パッド及び研磨方法 - Google Patents
鎖伸長剤,ポリウレタンとその改質方法,研磨層,研磨パッド及び研磨方法 Download PDFInfo
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- WO2018207670A1 WO2018207670A1 PCT/JP2018/017200 JP2018017200W WO2018207670A1 WO 2018207670 A1 WO2018207670 A1 WO 2018207670A1 JP 2018017200 W JP2018017200 W JP 2018017200W WO 2018207670 A1 WO2018207670 A1 WO 2018207670A1
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- polishing
- polyurethane
- schiff base
- chain extender
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- C08G18/66—Compounds of groups C08G18/42, C08G18/48, or C08G18/52
- C08G18/6666—Compounds of group C08G18/48 or C08G18/52
- C08G18/667—Compounds of group C08G18/48 or C08G18/52 with compounds of group C08G18/32 or polyamines of C08G18/38
- C08G18/6674—Compounds of group C08G18/48 or C08G18/52 with compounds of group C08G18/32 or polyamines of C08G18/38 with compounds of group C08G18/3203
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/72—Polyisocyanates or polyisothiocyanates
- C08G18/74—Polyisocyanates or polyisothiocyanates cyclic
- C08G18/76—Polyisocyanates or polyisothiocyanates cyclic aromatic
- C08G18/7657—Polyisocyanates or polyisothiocyanates cyclic aromatic containing two or more aromatic rings
- C08G18/7664—Polyisocyanates or polyisothiocyanates cyclic aromatic containing two or more aromatic rings containing alkylene polyphenyl groups
- C08G18/7671—Polyisocyanates or polyisothiocyanates cyclic aromatic containing two or more aromatic rings containing alkylene polyphenyl groups containing only one alkylene bisphenyl group
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/83—Chemically modified polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
Definitions
- the present invention relates to a novel chain extender used as a raw material for producing polyurethane, a novel polyurethane and a modification method thereof, a polishing layer, a polishing pad, and a polishing method.
- Polyurethane is produced by reacting a raw material containing a chain extender, a polymer diol, and an organic diisocyanate.
- a chain extender composed of an amide group-containing diol, which is used as a raw material component of a polyurethane resin that can produce a thermoplastic polyurethane resin having excellent mechanical strength and excellent thermal stability.
- CMP is a method of polishing an object to be polished with high accuracy with a polishing pad while supplying a slurry containing abrasive grains and a reaction liquid to the surface of the object to be polished.
- Polyurethane is used as a material for a polishing layer of a polishing pad used in CMP.
- Patent Document 2 listed below is a preparation process (break-in) in which a polishing pad is attached to a polishing apparatus, and the polishing pad surface is sharpened by a dressing process in the initial stage of use when the polishing apparatus is started up. A polishing pad that shortens the time required for) is disclosed.
- a polishing pad having a polishing surface pressed against an object to be polished and having a waviness of the polishing surface having a period of 5 mm to 200 mm and a maximum amplitude of 40 ⁇ m or less is disclosed.
- Patent Document 2 discloses that when the zeta potential of the polishing surface of the polishing pad is ⁇ 50 mV or more and less than 0 mv, the repulsion between the polishing surface and the negative abrasive grains in the slurry is suppressed. It is disclosed that the familiarity between the polished surface and the abrasive grains is improved and the break-in time is shortened.
- Patent Document 3 described below reduces the generation of scratches and defects on the surface of an object to be polished by suppressing the adhesion of polishing debris to the surface of the polishing pad, thereby improving the yield of the product, and achieving high flatness and an appropriate level.
- a polishing pad that provides a high polishing rate. Specifically, a polishing pad is disclosed in which the zeta potential of the polishing surface opposite to the object to be polished is less than ⁇ 55 mV and greater than ⁇ 100 mv.
- Patent Document 4 discloses a polishing pad used for polishing by being fixed to a surface plate and capable of polishing without causing a defect in an insulating layer at a low load in CMP.
- the surface of the polishing pad that is in contact with the object to be polished has a tensile elastic modulus at room temperature of 0.2 GPa or more and a pH range of the slurry supplied between the object to be polished and the polishing pad.
- a polishing pad using a material having a zeta potential of +0.1 to +30 mV is disclosed.
- a polishing pad having a zeta potential of ⁇ 8.5 mV when CMP is performed using an acidic slurry having a pH of 3 to 5 is disclosed.
- JP 2011-213866 A International Publication No. 2008-029725 Pamphlet JP 2013-018056 A JP 2005-294661 A
- the present invention relates to a novel chain extender used as a raw material for producing polyurethane, a process for producing the same, a novel polyurethane obtained using the chain extender, a polishing layer using the polyurethane, a polishing pad, and An object is to provide a polishing method used.
- One aspect of the present invention is a chain extender that is a chain extender used as a raw material for producing polyurethane and that is a diol having a Schiff base, a diamine having a Schiff base, or a derivative thereof. According to such a Schiff base-containing chain extender, it is possible to produce a polyurethane containing a Schiff base, which has not been conventionally used.
- R1-N C-R2 (1)
- R1 is an alkyl group, an alkenyl group, a hydroxyphenyl group, an aminophenyl group, a hydroxybenzylimino group, an aminobenzylimino group, or a group containing them
- R2 is a group in which R1 is an alkyl group or A group containing a dihydroxyphenyl group when the group contains alkenyl, a group containing a hydroxyphenyl group when R1 is a group containing a hydroxyphenyl group or an aminophenyl group, and R1 is a hydroxybenzylimino group or an aminobenzylimino group
- a Schiff base-containing diol represented by the following formula: R1 and R2 may each have a substituent.
- Specific examples thereof include, for example, 2,4-dihydroxybenzene-1-iminobutane, 2,4-dihydroxybenzene-1-iminopropane, N, N′-bissalicylideneethylenediamine, 2-salicylideneamino Phenol, 4-[(3-dimethylamino-propylimino) -methyl] -benzene-1,3-diol and 3-[ ⁇ 4-[(3-hydroxy-propylimino) -methyl] -benzylidene ⁇ -amino] -Propan-1-ol and the like.
- Another aspect of the present invention is a polyurethane having a Schiff base.
- a polyurethane can be modified to have an aldehyde group, a carboxylic acid group, a hydroxyl group, an amino group, or the like starting from a Schiff base.
- Polyurethanes are derived from units derived from Schiff base-containing chain extenders, units derived from non-Schiff base-containing chain extenders other than Schiff base-containing chain extenders, units derived from high molecular diols, and derived from organic diisocyanates. It is preferable that the polyurethane contains at least a unit to be used. In addition, thermoplastic polyurethane is particularly preferable because it can be continuously produced by continuous melt polymerization and is excellent in sheet formability.
- an aldehyde group, a carboxylic acid group, a hydroxyl group, and an amino group are prepared by a step of preparing a polyurethane having a Schiff base and a post-treatment such as an acid treatment, an oxidation treatment, or a hydration treatment. And a step of performing a post-treatment for retaining at least one functional group selected from the group consisting of: According to such a method for modifying a polyurethane, the surface characteristics can be modified after molding of the polyurethane.
- another aspect of the present invention is a polishing layer containing a polyurethane having at least one functional group selected from an aldehyde group, a carboxylic acid group, a hydroxyl group, and an amino group.
- the polishing layer has a carboxylic acid group, and a zeta potential at pH 3.0 of ⁇ 1.0 mV or less has a high affinity for abrasive grains not only in an alkaline slurry but also in an acidic slurry. It is preferable from the point which shows.
- the number average molecular weight of the polymer diol unit used in the production of the polyurethane is preferably 450 to 3000 from the viewpoint of satisfying required characteristics such as hydrophilicity.
- the polyurethane used as the material for the polishing layer is a non-foamed material because the polishing characteristics hardly change and stable polishing can be realized.
- the polishing layer may be a molded body type including a polyurethane molded body, or a nonwoven fabric type including a nonwoven fabric and polyurethane impregnated with the nonwoven fabric.
- the polishing layer has a storage elastic modulus at 50 ° C. of 50 to 1200 MPa after saturated swelling with water at 50 ° C. and a contact angle with water of 80 degrees or less. From the point which is excellent also in property.
- Another aspect of the present invention is a polishing pad including any one of the above polishing layers.
- Another aspect of the present invention is a step of fixing a polishing pad having a carboxylic acid group and having a polishing layer having a zeta potential of ⁇ 1.0 mV or less at pH 3.0 on a surface plate of a polishing apparatus; A step of holding the object to be polished by the holder of the polishing apparatus so as to face the polishing surface of the polishing layer, and supplying an acidic slurry between the polishing surface and the object to be polished, And polishing the object to be polished by relatively sliding them. According to such a method, even when CMP is performed using an acidic slurry, a high polishing rate and polishing uniformity can be maintained by increasing the affinity with the abrasive grains in the slurry.
- the chain extender according to the present invention can provide a polyurethane having a Schiff base. Moreover, various functional groups can be held in the polyurethane starting from such a Schiff base of polyurethane. When such a polyurethane is used as the polishing layer, the polishing characteristics can be improved by modifying the surface characteristics.
- FIG. 1 is an explanatory diagram for explaining a process of modifying a polyurethane containing a unit derived from 2,4-dihydroxybenzene-1-iminobutane into a polyurethane having a carboxylic acid group.
- FIG. 2 is an explanatory view for explaining dissociation of a carboxylic acid group introduced into polyurethane.
- FIG. 3 is an explanatory diagram for explaining a process of hydrating an aldehyde group introduced into polyurethane to reform it into a polyurethane having a hydroxyl group.
- FIG. 4 is an explanatory diagram for explaining a process of retaining an amino group in polyurethane by hydrolyzing the Schiff base retained in the polyurethane by acid treatment.
- FIG. 5 is an explanatory diagram for explaining a polishing method using the polishing pad of the embodiment.
- the Schiff base-containing chain extender used as the polyurethane production raw material of this embodiment is a diol or diamine having a Schiff base, or a derivative thereof.
- R1-N C-R2 (1)
- R1 is an alkyl group, an alkenyl group, a hydroxyphenyl group, an aminophenyl group, a hydroxybenzylimino group, an aminobenzylimino group, or a group containing them
- R2 is a group in which R1 is an alkyl group or A group containing a dihydroxyphenyl group when the group contains alkenyl, a group containing a hydroxyphenyl group when R1 is a group containing a hydroxyphenyl group or an aminophenyl group
- R1 is a hydroxybenzylimino group or an aminobenzylimino group A group containing a hydroxyphenyl group, R1 and
- Examples of the alkyl group represented by R1 in the general formula (1) include methyl, ethyl, propyl, iso-propyl, n-butyl, iso-butyl, sec-butyl, tert-butyl, pentyl, iso-pentyl, sec-pentyl, and hexyl. , Heptyl, n-octyl, isooctyl, 2-ethylhexyl, nonyl, decyl, isodecyl, dodecyl, tetradecyl, hexadecyl, octadecyl, and the like.
- an alkyl group having 2 to 8 carbon atoms is preferable from the viewpoint of maintaining reactivity and crystallinity.
- alkenyl group for R1 examples include vinyl, allyl, methallyl, isopropenyl, 1-propenyl, 2-propenyl, 2-methyl-1-propenyl, butenyl, pentenyl, hexenyl, heptynyl, octenyl, nonenyl, decenyl, Examples thereof include alkenyl groups having 2 to 18 carbon atoms such as undecenyl, dodecenyl, tetradecenyl, hexadecenyl, octadecenyl and the like.
- R2 is a group selected according to the type of R1, specifically, when R1 is a group containing an alkyl group or alkenyl, a group containing a dihydroxyphenyl group, and R1 is a hydroxyphenyl group or an aminophenyl group.
- R1 is a group containing a hydroxyphenyl group, it is a group containing a hydroxyphenyl group.
- R1 is a group containing a hydroxybenzylimino group or an aminobenzylimino group, it is a group containing a hydroxyphenyl group.
- Examples of such a Schiff base-containing diol include 2,4-dihydroxybenzene-1-iminobutane represented by the following formula (2) and 2,4-dihydroxybenzene-1-iminopropane represented by the following formula (3).
- N N′-bissalicylideneethylenediamine represented by the following formula (4), 2-salicylideneaminophenol represented by the following formula (5), 4-[(3- Dimethylamino-propylimino) -methyl] -benzene-1,3-diol, 3-[ ⁇ 4-[(3-hydroxy- propylimino) -methyl] -benzylidene ⁇ -amino] represented by the following formula (7) -Propan-1-ol and the like.
- Such a chain extender can be obtained, for example, by reaction of monohydroxybenzaldehyde or dihydroxybenzaldehyde with N-alkyleneamine, or reaction of N-aminoalkylene alcohol with monobenzaldehyde or phthaldialdehyde.
- monohydroxybenzaldehyde examples include 3-hydroxybenzaldehyde.
- dihydroxybenzaldehyde examples include 2,4-dihydroxybenzaldehyde and 3,4-dihydroxybenzaldehyde.
- N-alkyleneamines include N-butylamine, N-propylamine, and N-amylamine.
- a specific example of N-aminoalkylene alcohol is 3-amino-1-propanol.
- monobenzaldehyde examples include benzaldehyde and 3-phenylpropionaldehyde.
- phthaldialdehyde is terephthalaldehyde.
- N-alkyleneamine with monohydroxybenzaldehyde or dihydroxybenzaldehyde
- synthesis of 2,4-dihydroxybenzene-1-iminobutane by the reaction of 2,4-dihydroxybenzaldehyde and N-butylamine.
- the reaction scheme shown in Formula (8) is mentioned.
- N-alkyleneamine and monohydroxybenzaldehyde or dihydroxybenzaldehyde
- a reaction between 2,4-dihydroxybenzaldehyde and N, N-dimethyl-1,3-propanediamine is, for example, a reaction between 2,4-dihydroxybenzaldehyde and N, N-dimethyl-1,3-propanediamine.
- a reaction scheme shown in the following formula (9) for synthesizing [(3-dimethylamino-polopyrimino) -methyl] -benzene-1,3-diol can be mentioned.
- each said reaction is performed as follows, for example. N-alkyleneamine and monohydroxybenzaldehyde or dihydroxybenzaldehyde or N-aminoalkylene alcohol and monobenzaldehyde or phthaldialdehyde are dissolved in a predetermined solvent, and a base catalyst such as triethylamine is further added. Then, while stirring the solution at a predetermined temperature, the reaction is allowed to proceed by holding for a predetermined time until the reaction is completed.
- a base catalyst such as triethylamine
- the solvent is not particularly limited as long as it dissolves N-alkyleneamine and monohydroxybenzaldehyde or dihydroxybenzaldehyde, or N-aminoalkylene alcohol and monobenzaldehyde or phthaldialdehyde. Specifically, for example, And ethyl acetate and dichloromethane.
- a solvent may be used independently or may be used in combination of 2 or more type.
- specific examples of the base catalyst include triethylamine and pyridine.
- the reaction temperature is not particularly limited as long as the reaction proceeds promptly and the target product can be obtained with a high yield.
- the reaction is preferably performed at about 25 to 50 ° C.
- the reaction temperature may be a constant temperature or may be raised or lowered stepwise or continuously.
- reaction product is precipitated from the reaction solution obtained by the reaction, separated by crystallization treatment such as recrystallization, and collected by suction filtration as a crude crystal. Then, the recovered crude crystals are washed with an appropriate solvent and then dried, whereby the target product is taken out.
- the thus obtained Schiff base-containing diol has a melting point by differential scanning calorimetry (DSC) measurement of, for example, about ⁇ 30 to 200 ° C., more preferably about ⁇ 20 to 190 ° C., which is suitable for the production of polyurethane. This is preferable.
- DSC differential scanning calorimetry
- the melting point of 2,4-dihydroxybenzene-1-iminobutane is 151 ° C.
- the melting point of 4-[(3-dimethylamino-propylopyrimino) -methyl] -benzene-1,3-diol is 146 ° C.
- 3-[ ⁇ 4-[(3-hydroxy- propylimino) -methyl] -benzylidene ⁇ -amino] -propan-1-ol has a melting point of 155 ° C.
- N, N′-bissalicylidene ethylenediamine has a melting point of 127 ° C.
- 2- The melting point of salicylideneaminophenol is 185 ° C.
- the temperature increase rate of the Schiff base-containing diol thus obtained is 10 ° C./min
- the 5% thermogravimetric decrease temperature by thermogravimetric analysis under a nitrogen stream is 80 ° C. or higher, more preferably 90 ° C. or higher.
- the 5% thermogravimetric decrease temperature by thermogravimetric analysis under a nitrogen stream is 80 ° C. or higher, more preferably 90 ° C. or higher.
- 2,4-dihydroxybenzene-1-iminobutane has a 5% thermogravimetric decrease temperature of 163 ° C.
- 5-[(3-dimethylamino-poropyrimino) -methyl] -benzene-1,3-diol has a 5% thermogravimetric temperature.
- Decrease temperature is 169 ° C
- N N'-bissalicylideneethylenediamine
- thermogravimetric decrease temperature is 233 ° C
- the 5% thermal weight loss temperature of -propan-1-ol is 228 ° C.
- the Schiff base-containing chain extender is preferably used as a chain extender that is a raw material for producing various polyurethanes.
- the polyurethane may be a thermoplastic polyurethane or a thermosetting polyurethane. When used as a polishing layer of a polishing pad, thermoplastic polyurethane is preferable from the viewpoint of sheet formability.
- the polyurethane obtained using the Schiff base-containing chain extender is subjected to post-treatment such as acid treatment, oxidation treatment, or hydration treatment so that various functional groups can be converted into the polyurethane starting from the Schiff base. Can be retained.
- Such polyurethane is preferably used for various uses of polyurethanes that require modification of hydrophilicity and electrical characteristics.
- thermoplastic polyurethane As an example of a polyurethane having a Schiff base produced using a Schiff base-containing chain extender as a production raw material, a thermoplastic polyurethane will be described in detail as a representative example.
- thermoplastic polyurethane of this embodiment is obtained by polymerizing a raw material containing at least a chain extender containing a Schiff base-containing chain extender, a high molecular diol, and an organic diisocyanate.
- the Schiff base-containing chain extender examples include those described above, for example, 2,4-dihydroxybenzene-1-iminobutane, 2,4-dihydroxybenzene-1-iminopropane, N, N′-bissalicylideneethylenediamine.
- 2,4-dihydroxybenzene-1-iminobutane is particularly preferable from the viewpoint of easily maintaining the reactivity, the characteristics of the free substance, and the crystallinity.
- a chain extender containing no Schiff base may be used in combination with a chain extender containing no Schiff base.
- a chain extender that does not contain a Schiff base a low molecular compound having no Schiff base having a molecular weight of 300 or less and having two or more active hydrogen atoms capable of reacting with an isocyanate group in the molecule is used. Can be mentioned.
- ethylene glycol diethylene glycol, 1,2-propanediol, 1,3-propanediol, 2,2-diethyl-1,3-propanediol, 1,2-butanediol, 1,3 -Butanediol, 2,3-butanediol, 1,4-butanediol, 1,5-pentanediol, neopentyl glycol, 1,6-hexanediol, 3-methyl-1,5-pentanediol, 1,4 -Bis ( ⁇ -hydroxyethoxy) benzene, 1,4-cyclohexanediol, cyclohexanedimethanol (1,4-cyclohexanedimethanol, etc.), bis ( ⁇ -hydroxyethyl) terephthalate, 1,9-nonanediol, m-xyl Diols such as lenglycol,
- n-bis (4-aminophenoxy) alkane (n is 3 to 10), 1,2-bis [2- (4-aminophenoxy) ethoxy] ethane, 9,9-bis (4-aminophenyl) fluorene, 4 Diamines such as 4,4'-diaminobenzanilide. These may be used alone or in combination of two or more. Of these, 1,4-butanediol is preferred.
- the ratio (mol%) of the Schiff base-containing chain extender to the total amount of the Schiff base-containing chain extender and the Schiff base-free chain extender when using a Schiff base-free chain extender is appropriately selected according to the purpose. Is done. Specifically, for example, it is preferably 5 to 95 mol%, more preferably 10 to 90 mol%. When the content ratio of the Schiff base-containing chain extender is too low, the modification effect described later tends to be small.
- polymer diol examples include polyether diol, polyester diol, polycarbonate diol, and the like. These may be used alone or in combination of two or more. In these, polyether diol and polyester diol are preferable.
- the number average molecular weight of the polymer diol is 450 to 3000, more preferably 500 to 2700, and particularly 500 to 2400, and it is easy to obtain a polishing layer that maintains required properties such as rigidity, hardness, and hydrophilicity. It is preferable from the point.
- the number average molecular weight of polymer diol means the number average molecular weight calculated based on the hydroxyl value measured based on JISK1557.
- polyether diol examples include, for example, polyethylene glycol, polypropylene glycol, polytetramethylene glycol, poly (methyltetramethylene glycol), glycerin-based polyalkylene ether glycol and the like. These may be used alone or in combination of two or more. Among these, polyethylene glycol and polytetramethylene glycol, particularly polytetramethylene glycol are preferable.
- the polyester diol can be obtained, for example, by directly esterifying or transesterifying an ester-forming derivative such as dicarboxylic acid or its ester or anhydride with a low molecular diol.
- ester-forming derivatives such as dicarboxylic acids or their esters and anhydrides for producing polyester diols include the following compounds. Oxalic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, dodecanedicarboxylic acid, 2-methylsuccinic acid, 2-methyladipic acid, 3-methyladipic acid, 3-methylpentane C2-C12 aliphatic dicarboxylic acids such as acids, 2-methyloctanedioic acid, 3,8-dimethyldecanedioic acid, 3,7-dimethyldecanedioic acid; unsaturated fatty acids obtained by fractionation of triglycerides Aliphatic dicarboxylic acids such as dimerized aliphatic dicarboxylic acids having 14 to 48 carbon atoms (dimer acids) and hydrogenated products thereof (hydrogenated dimer acids); alicyclics such as 1,
- dimer acid and hydrogenated dimer acid include trade names “Pripol 1004”, “Plipol 1006”, “Plipol 1009”, and “Plipol 1013” manufactured by Unikema Corporation. These may be used alone or in combination of two or more.
- low molecular diol for producing the polyester diol include the following compounds. Ethylene glycol, 1,3-propanediol, 1,2-propanediol, 2-methyl-1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl- 1,5-pentanediol, 1,6-hexanediol, 1,7-heptanediol, 1,8-octanediol, 2-methyl-1,8-octanediol, 1,9-nonanediol, 1,10- Aliphatic diols such as decanediol; cycloaliphatic diols such as cyclohexanedimethanol and cyclohexanediol, and the like. These may be used alone or in combination of two or more. Among these, di
- Examples of the polycarbonate diol include those obtained by a reaction between a low molecular diol and a carbonate compound such as dialkyl carbonate, alkylene carbonate, and diaryl carbonate.
- Examples of the low molecular diol for producing the polycarbonate diol include the low molecular diols exemplified above.
- Examples of the dialkyl carbonate include dimethyl carbonate and diethyl carbonate.
- ethylene carbonate etc. are mentioned as alkylene carbonate.
- Examples of the diaryl carbonate include diphenyl carbonate.
- the organic diisocyanate is not particularly limited as long as it is an organic diisocyanate conventionally used in the production of polyurethane. Specific examples thereof include, for example, ethylene diisocyanate, tetramethylene diisocyanate, pentamethylene diisocyanate, hexamethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, 2,4,4-trimethylhexamethylene diisocyanate, dodecamethylene diisocyanate, isophorone.
- Diisocyanate isopropylidenebis (4-cyclohexylisocyanate), cyclohexylmethane diisocyanate, methylcyclohexane diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, lysine diisocyanate, 2,6-diisocyanatomethylcaproate, bis (2-isocyanatoethyl) ) Fumarate, bis (2-isocyanatoethyl) carbonate, 2-isocyanatoethyl-2,6-diisocyanatohexano , Cyclohexylene diisocyanate, methylcyclohexylene diisocyanate, bis (2-isocyanatoethyl) -4-cyclohexene and other aliphatic or alicyclic diisocyanates; 2,4'-diphenylmethane diisocyanate, 4,4'-diphenylme
- Thermoplastic polyurethane is a urethanation reaction using a known prepolymer method or one-shot method using a raw material containing at least a chain extender containing the above-mentioned Schiff base-containing chain extender, a polymer diol, and an organic diisocyanate. Is obtained. Preferably, it is obtained by a method in which the above-mentioned components are blended at a predetermined ratio in a substantial absence of a solvent and continuously melt polymerized while being melt-mixed using a single-screw or multi-screw extruder.
- the blending ratio of each component is appropriately adjusted according to the target characteristics.
- the isocyanate group contained in the organic diisocyanate is 0.95 to 1.3 mol, more preferably 0.96 to 1.10 mol, In particular, it is preferably blended at a ratio of 0.97 to 1.05 mol.
- the ratio of the isocyanate group contained in the organic diisocyanate is too low, the mechanical strength and wear resistance of the thermoplastic polyurethane are lowered, and the life of the polishing layer tends to be shortened.
- productivity and storage stability of a thermoplastic polyurethane will fall, and there exists a tendency for manufacture of a polishing layer to become difficult.
- thermoplastic polyurethane obtained by continuous melt polymerization is pelletized and then formed into a sheet-like molded body by various molding methods such as extrusion molding, injection molding, blow molding, and calendar molding. Molded.
- extrusion molding using a T die is preferable because a sheet-like molded body having a uniform thickness can be obtained.
- thermoplastic polyurethanes can be used as needed, including crosslinking agents, fillers, crosslinking accelerators, crosslinking aids, softeners, tackifiers, anti-aging agents, foaming agents, processing aids, adhesion promoters, and inorganic additives.
- additives such as an agent, antioxidant, and a conductive agent.
- the content of the thermoplastic polyurethane additive is not particularly limited, but is preferably 50% by mass or less, more preferably 20% by mass or less, and particularly preferably 5% by mass or less.
- the polyurethane of this embodiment is a polyurethane having a Schiff base.
- the polyurethane can be modified to have a variety of characteristics.
- a polyurethane having a Schiff base has an aldehyde group, a carboxylic acid group, a hydroxyl group, and an amino group starting from the Schiff base by modification treatment by post-treatment such as acid treatment, oxidation treatment, or hydration treatment. These functional groups can also be further converted.
- surface modification with a variety of surface electrical characteristics and hydrophilicity becomes possible. Next, this reforming process will be described in detail.
- the Schiff base introduced into the polyurethane is treated under acidic conditions, the Schiff base on the surface of the polyurethane is hydrolyzed to decompose into an aldehyde and an amine.
- the type of the Schiff base-containing chain extender even if the aldehyde group is left on the surface of the polyurethane and the amino compound is liberated, the amino group is left on the surface of the polyurethane and the aldehyde compound is removed. It may be liberated.
- the acid treatment conditions for decomposing the Schiff base into amino groups and aldehyde groups are not particularly limited. Specific examples thereof include hydrochloric acid, acetic acid, sulfuric acid, dilute sulfuric acid, nitric acid, and acidic solutions thereof. The conditions which make it contact with an acidic solution are mentioned. In these, it is preferable to use hydrochloric acid or dilute sulfuric acid from the point which suppresses decomposition
- a polyurethane having an aldehyde group is obtained by the modification treatment by hydrolysis. And the polyurethane which has a carboxylic acid group is obtained by oxidizing the polyurethane which has an aldehyde group in the solution which added the oxidizing agent.
- the oxidizing agent include potassium nitrate, hypochlorous acid, halogen, permanganate, cerium ammonium nitrate, chromic acid, hydrogen peroxide, and other peroxides, TEMPO reagent, ruthenium acid, and the like. It is done.
- hydrogen peroxide is particularly preferable from the viewpoint of stable oxidizing power at about 25 to 50 ° C. and suppressing deterioration of polyurethane.
- the carboxylic acid group of polyurethane dissociates into —COO 2 — and H + when it comes into contact with an aqueous solution containing an acidic region and having a pH at which the carboxylic acid group is ionized. Then, -COO the surface - by imparting a negative potential to the surface of the polyurethane. Such a negative potential lowers the zeta potential in the acidic region and improves the affinity with the abrasive grains in the acidic slurry in the use as a polishing layer of the polishing pad described later.
- a method of retaining an aldehyde group by using water as a solvent of an acidic solution used for acid treatment, and then hydrating by contacting with water, or reducing an aldehyde group The method of reducing to a hydroxyl group with an agent is mentioned.
- the hydroxyl group of the polyurethane having a hydroxyl group improves the wettability by increasing the hydrophilicity of the polyurethane surface.
- the polyurethane which has a carboxylic acid group is obtained by oxidizing the hydroxyl group of the polyurethane which has a hydroxyl group.
- Specific examples of the oxidizing agent for oxidizing the hydroxyl group of the polyurethane having a hydroxyl group include, for example, peroxidation of potassium nitrate, hypochlorous acid, halogen, permanganate, cerium ammonium nitrate, chromic acid, hydrogen peroxide water, etc. Products, TEMPO reagents, ruthenic acid, and the like. Of these, hydrogen peroxide is particularly preferable from the viewpoint of stable oxidizing power at about 25 to 50 ° C. and suppressing deterioration of polyurethane.
- 3-[ ⁇ 4-[(3-hydroxy- propylimino) -methyl] -benzylidene ⁇ -amino] -propan-1-ol is converted to a Schiff base-containing chain extender.
- the Schiff base is hydrolyzed to hydrolyze the primary base retained in the side chain of the polyurethane and to liberate terephthalaldehyde. Is done.
- a polyurethane having an amino group is obtained.
- the amino group of the polyurethane having an amino group is used for imparting a positive potential or generating a crosslinking point.
- the polyurethane of the present embodiment as described above is a non-foamed or foamed non-foamed or foamed polyurethane pad as a polishing layer, or a non-woven fabric type in which polyurethane is contained in the internal voids of the non-woven fabric. It is used as a polyurethane material for various types of polishing layers, such as polishing layers and polishing layers mainly composed of polyurethane foam produced by cast foam curing.
- the polyurethane may be thermoplastic polyurethane or thermosetting polyurethane.
- the slurry used for CMP includes an acidic slurry and an alkaline slurry.
- the acidic slurry and the alkaline slurry are selected according to the purpose of polishing, or are used in combination when performing a multistage polishing process.
- Abrasive grains contained in an alkaline slurry usually have a negative zeta potential.
- the zeta potential of the polishing layer can be kept negative, thereby making it difficult for polishing debris to adhere to the polishing layer. It seems that the effect of reducing the occurrence of defects appears.
- the zeta potential is often positive when an acidic slurry is used.
- abrasive grains in acidic slurry have a positive zeta potential.
- the zeta potential on the surface of a silicon wafer is usually negative in acidity. In this case, since the negative charge on the surface of the silicon wafer and the positive charge of the abrasive grains in the acidic slurry are attracted, it seems that the mutual affinity is high.
- the zeta potential of general polyurethane is positive in the acidic region, particularly in the pH region lower than pH 3, approaches the zero at the isoelectric point near pH 3, and negative in the alkaline region where pH is high. Tend to be.
- the inventors of the present invention have a slurry exhibiting a positive zeta potential interposed between a substrate exhibiting a negative zeta potential and a polishing layer exhibiting a negative zeta potential. It was considered that the polishing rate was improved by the high affinity of the grains to both the substrate and the polishing layer.
- the polyurethane of the first example used as the material for the polishing layer of the present embodiment is a polyurethane having a carboxylic acid group.
- a polishing layer using a polyurethane having a carboxylic acid group on the surface as a material has a surface zeta potential of ⁇ 1 at pH 3.0 due to dissociation of the carboxylic acid group on the surface into —COO ⁇ when contacting with an acidic slurry. It is possible to realize a polishing layer that is 0.0 mV or less. When the zeta potential at pH 3.0 is ⁇ 1.0 mV or less, it shows high affinity with abrasive grains showing a positive zeta potential in the acidic region.
- the abrasive grains showing a positive zeta potential are interposed, so that the abrasive grains become the base material and A high polishing rate can be achieved to show a high affinity for both polishing layers.
- the zeta potential at pH 3.0 of the polishing layer using polyurethane having a carboxylic acid group as a raw material is ⁇ 1.0 to ⁇ 40 mV, further ⁇ 2.0 to ⁇ 30 mV, particularly ⁇ 3.0 to ⁇ 27 mV. Is preferably ⁇ 5.0 to ⁇ 20 mV.
- the zeta potential of the polishing layer at pH 3.0 is too high, the affinity becomes low because the polishing slurry and the polishing layer repel each other electrically.
- the zeta potential at pH 3.0 is too low, the amount of slurry held on the polishing surface becomes too large, and scratches on the surface to be polished may easily increase.
- the zeta potential is a potential generated on the surface of the electric double layer (sliding surface) by a counter ion according to the surface charge of the substance when the substance is in contact with the liquid.
- the zeta potential is measured by using an electrophoretic light scattering device (ELS-Z, manufactured by Otsuka Electronics Co., Ltd.) and monitoring latex dispersed in 10 mM NaCl aqueous solution adjusted to pH 3.0 with HCl aqueous solution ( Zeta potential measured using Otsuka Electronics Co., Ltd.
- the zeta potential at pH 4.0 of the polishing layer using polyurethane having a carboxylic acid group as a material is ⁇ 1.0 mV or less, further ⁇ 5.5 to ⁇ 40 mV, particularly ⁇ 7.5 to ⁇ 30 mV, In particular, ⁇ 10.0 to ⁇ 30 mV is preferable because a polishing layer having a zeta potential of ⁇ 1.0 mV or less at pH 3.0 is easily obtained.
- the slurry used for CMP is usually an aqueous dispersion using an aqueous medium such as water. Therefore, the higher the hydrophilicity of the surface of the polishing layer that contacts the slurry of the polishing pad used in CMP, the higher the affinity with the slurry.
- the polishing layer using polyurethane having a hydroxyl group on the surface of the present embodiment as a raw material can realize a high polishing rate by increasing the hydrophilicity of the hydroxyl group on the surface when in contact with the slurry which is an aqueous dispersion. it can.
- Each of the polyurethanes exemplified as described above preferably has a storage elastic modulus at 50 ° C. after saturation swelling with water at 50 ° C., 50 to 1200 MPa, more preferably 100 to 1100 MPa, and particularly preferably 200 to 1000 MPa. . If the storage elastic modulus at 50 ° C. after saturation swell of polyurethane with 50 ° C. water is too low, the polishing layer becomes too soft and the polishing rate decreases, and if it is too high, the surface to be polished of the object to be polished There is a tendency for scratches to increase.
- the content of nitrogen atoms derived from isocyanate groups is 4.5 to 7.6% by mass, further 5.0 to 7.4% by mass, and particularly 5.2 to 7.
- the content of 3% by mass is preferable from the viewpoint of easily obtaining a thermoplastic polyurethane having a storage elastic modulus at 50 ° C. of 50 to 1200 MPa after saturated swelling with water at 50 ° C.
- each polyurethane has a contact angle with water of 80 degrees or less, more preferably 78 degrees or less, particularly 76 degrees or less, and particularly preferably 74 degrees or less.
- the contact angle of polyurethane with water is too large, scratches tend to increase due to a decrease in hydrophilicity of the polishing surface of the polishing layer.
- the polyurethane of the present embodiment is manufactured by polishing pad with a non-foamed or foamed polyurethane molded body as a polishing layer, a non-woven polishing layer in which polyurethane is contained in the internal voids of the non-woven fabric, and cast foam curing. It is used as a polyurethane material for various types of polishing layers such as a polishing layer mainly composed of polyurethane foam.
- the polyurethane may be thermoplastic polyurethane or thermosetting polyurethane. Among these, a polishing layer of a thermoplastic polyurethane molded body is preferable from the viewpoint that it can be continuously produced by continuous melt polymerization and is excellent in sheet formability.
- a polishing layer of a non-foamed thermoplastic polyurethane molded body is particularly preferable from the viewpoint that the polishing characteristics hardly change and stable polishing can be realized.
- polishing characteristics such as flatness and planarization efficiency tend to fluctuate due to variation in the foam structure. Also, it is difficult to increase the hardness for improving the flatness.
- a polyurethane molded body it may be a foam or a non-foam, but it is a non-foam because it has a high rigidity and homogeneity of the material, so that the polishing characteristics hardly change and stable polishing can be realized. It is preferable.
- the foaming structure varies, so that the polishing characteristics such as flatness and planarization efficiency tend to fluctuate. Further, it tends to be difficult to increase the hardness for improving the flatness.
- a thermoplastic polyurethane molded body is particularly preferable because it can be continuously produced by continuous melt polymerization and is excellent in sheet moldability.
- the density of the molded product is preferably 1.0 g / cm 3 or more, more preferably 1.1 g / cm 3 or more, and particularly preferably 1.2 g / cm 3 or more.
- the polishing layer becomes too soft and local flatness tends to decrease.
- a non-woven fabric type polishing layer is obtained by impregnating a non-woven fabric with a polyurethane solution produced by solution polymerization or a polyurethane solution prepared by dissolving a polyurethane produced by melt polymerization in an organic solvent such as dimethylformamide (DMF). Or it manufactures by the method of making polyurethane contain in the internal space
- DMF dimethylformamide
- nonwoven fabric used for the production of the nonwoven fabric type polishing layer those conventionally used for the nonwoven fabric type polishing layer can be used without any particular limitation.
- a nonwoven fabric of fibers mainly composed of a polyester resin having a fineness of 1 to 10 dtex is used.
- the density is preferably 0.30 g / cm 3 or more, more preferably 0.40 g / cm 3 or more.
- the polyurethane content is preferably about 10 to 50% by mass.
- the polishing layer is finished into a polishing layer by adjusting the size, shape, thickness, etc. of a polyurethane sheet-like molded body or a nonwoven fabric type molded body by cutting, slicing, punching, or the like.
- the thickness of the polishing layer is not particularly limited, but is 0.3 to 5 mm, more preferably 1.7 to 2.8 mm, and particularly 2.0 to 2.5 mm, which is easy to produce and handle, and polishing performance. From the viewpoint of stability, it is preferable.
- the hardness of each polishing layer is preferably 60 or more, more preferably 65 or more in terms of JIS-D hardness.
- JIS-D hardness is too low, the followability of the polishing pad to the surface to be polished becomes high and local flatness tends to be lowered.
- recesses such as grooves and holes are formed on the polishing surface of each polishing layer in a predetermined concentric pattern by grinding or laser processing.
- a concave portion supplies the slurry uniformly and sufficiently to the polishing surface, and serves to prevent polishing damage that causes scratches and to prevent damage to the wafer due to adsorption of the polishing layer.
- the distance between the grooves is preferably about 1.0 to 50 mm, more preferably about 1.5 to 30 mm, and particularly preferably about 2.0 to 15 mm.
- the groove width is preferably about 0.1 to 3.0 mm, more preferably about 0.2 to 2.0 mm.
- the depth of the groove is preferably about 0.2 to 1.8 mm, more preferably about 0.4 to 1.5 mm.
- a cross-sectional shape of the groove for example, a shape such as a rectangle, a trapezoid, a triangle, a semicircle, and the like is appropriately selected according to the purpose.
- the polishing pad may be composed of only the above-mentioned polishing layer made of polyurethane, or may be a laminate in which a cushion layer is laminated on the surface of the polishing layer that is not the polishing surface, if necessary.
- the cushion layer is preferably a layer having a hardness lower than that of the polishing layer. When the hardness of the cushion layer is lower than the hardness of the polishing layer, the hard polishing layer follows the local unevenness of the surface to be polished, and the cushion layer does not warp or swell the entire substrate to be polished. In order to follow, polishing with excellent balance between global flatness and local flatness becomes possible.
- the material used as the cushion layer include a composite in which a nonwoven fabric is impregnated with polyurethane (for example, “Suba400” (manufactured by Nitta Haas Co., Ltd.)); natural rubber, nitrile rubber, polybutadiene rubber, silicone rubber, etc. Rubbers; polyester-based thermoplastic elastomers, polyamide-based thermoplastic elastomers, thermoplastic elastomers such as fluorine-based thermoplastic elastomers; foamed plastics; polyurethanes and the like.
- polyurethane having a foamed structure is particularly preferable from the viewpoint that flexibility preferable as a cushion layer can be easily obtained.
- the thickness of the cushion layer is not particularly limited, but is preferably about 0.5 to 5 mm, for example.
- the cushion layer is too thin, the follow-up effect on the warp and undulation of the entire surface to be polished tends to decrease and global flatness tends to decrease.
- the cushion layer is too thick, the entire polishing pad tends to be soft and stable polishing becomes difficult.
- the thickness of the polishing pad is preferably about 0.3 to 5 mm.
- a CMP apparatus 10 including a circular rotary surface plate 2, a slurry supply nozzle 3, a carrier 4, and a pad conditioner 6 shown in FIG. 5 is used.
- the polishing pad 1 having the above-described polishing layer is attached to the surface of the rotating surface plate 2 with a double-sided tape or the like. Further, the carrier 4 supports the workpiece 5.
- the rotating surface plate 2 is rotated in a direction indicated by an arrow by a motor (not shown).
- the carrier 4 is rotated in the direction indicated by the arrow, for example, by a motor (not shown) within the surface of the rotating surface plate 2.
- the pad conditioner 6 is also rotated in the direction of the arrow, for example, by a motor (not shown) in the plane of the rotating surface plate 2.
- a CMP pad conditioner 6 in which diamond particles are fixed to the surface of the carrier by nickel electrodeposition or the like is pressed. Then, the polishing surface of the polishing pad 1 is conditioned. By conditioning, the polished surface is adjusted to a surface roughness suitable for polishing the surface to be polished.
- the slurry 7 is supplied from the slurry supply nozzle 3 to the polishing surface of the rotating polishing pad 1. Moreover, when performing CMP, you may use lubricating oil, a coolant, etc. together with a slurry as needed.
- the slurry is, for example, a liquid medium such as water or oil; abrasive grains such as silica, alumina, cerium oxide, zirconium oxide, and silicon carbide; an oxidizing agent such as base, acid, surfactant, hydrogen peroxide solution,
- An acidic slurry used for CMP containing a reducing agent, a chelating agent and the like is preferably used.
- the slurry includes an acidic slurry, an alkaline slurry, and a slurry in the vicinity of neutrality.
- the pH is 2.0 to 7.0, particularly Is preferable in that high affinity with the slurry can be maintained even when CMP is performed using an acidic slurry having a pH of 3.0 to 6.0.
- an oxidizing agent is contained in the slurry, even a polishing layer having an aldehyde group or a hydroxyl group on the surface before polishing is oxidized to a carboxylic acid group by the oxidizing agent in the slurry. At the time of polishing, the zeta potential on the surface of the polishing layer can be negative.
- the object 5 to be polished which is fixed to the carrier 4 and rotates, is pressed against the polishing pad 1 where the slurry 7 has spread evenly over the polishing surface of the polishing layer. Then, the polishing process is continued until a predetermined flatness is obtained. By adjusting the pressing force applied during polishing and the speed of relative movement between the rotating surface plate 2 and the carrier 4, the finished quality is affected.
- the polishing conditions are not particularly limited, but for efficient polishing, the rotation speed of each of the rotating platen and the carrier is preferably low rotation of 300 rpm or less, and the pressure applied to the object to be polished causes scratches after polishing. It is preferable to set it to 150 kPa or less so as not to occur.
- the slurry is preferably continuously supplied to the polishing surface with a pump or the like.
- the supply amount of the slurry is not particularly limited, but it is preferable to supply the slurry so that the polishing surface is always covered with the slurry.
- the object to be polished is thoroughly washed with running water, and then water droplets adhering to the object to be polished are removed by using a spin dryer or the like and dried.
- a spin dryer or the like water droplets adhering to the object to be polished are removed by using a spin dryer or the like and dried.
- Such CMP of this embodiment is preferably used for polishing in manufacturing processes of various semiconductor devices, MEMS (Micro Electro Mechanical Systems) and the like.
- objects to be polished include an insulating film such as an oxide film formed on a semiconductor substrate, a metal film for wiring such as copper, aluminum, and tungsten; a barrier metal film such as tantalum, titanium, tantalum nitride, and titanium nitride; In particular, it is preferably used for polishing an insulating film such as an oxide film. It is also possible to polish a metal film on which a pattern such as a wiring pattern or a dummy pattern is formed. The pitch between lines in the pattern varies depending on the product, but is usually about 50 nm to 100 ⁇ m.
- the progress of the reaction was monitored by tracing the change of the spot at each Rf value by thin layer chromatography (TLC) using ethyl acetate as a developing solvent.
- Spots with an Rf value of 0 with no UV absorption and purple with the ninhydrin reagent show butylamine, UV absorption, spots with an Rf value of 0.50 with yellow color with the ninhydrin reagent show DBIB, UV absorption, and show with the ninhydrin reagent
- Unstained spots with an Rf value of 0.68 indicate 2,4-dihydroxybenzaldehyde, respectively.
- the thermal decomposition temperature of the obtained crystal was set to 30 ° C. at a rate of temperature increase of 10 ° C./min in a nitrogen atmosphere using a differential thermobalance (trade name: TG8120, manufactured by Rigaku). To 500 ° C. The thermal decomposition temperature was 163 ° C.
- the thermal decomposition temperature of the obtained crystal was set to 30 ° C. at a temperature increase rate of 10 ° C./min in a nitrogen atmosphere using a differential thermobalance (trade name: TG8120, manufactured by Rigaku). To 500 ° C. The thermal decomposition temperature was 169 ° C.
- Example 1 Polytetramethylene glycol (PTG850) having a number average molecular weight of 850, DBIB obtained in Production Example 1, 1,5-pentanediol (PD), and 4,4′-diphenylmethane diisocyanate (MDI) were mixed with PTG850: DBIB: PD. : MDI mass ratio of 23.6: 7.2: 15.5: 53.6 (DBIB to PD molar ratio 20/80) A thermoplastic polyurethane having a Schiff base was produced by continuously feeding to a machine and performing continuous melt polymerization.
- PTG850 Polytetramethylene glycol
- DBIB 1,5-pentanediol
- MDI 4,4′-diphenylmethane diisocyanate
- thermoplastic polyurethane melt was continuously extruded into water in a strand form, then chopped into pellets with a pelletizer, and the resulting pellets were dehumidified and dried at 80 ° C. for 20 hours to obtain a thermoplastic polyurethane (PU1) was produced.
- Diluted sulfuric acid neutralized with butylamine liberated by cleavage of the Schiff base was neutralized with a 0.05 M aqueous KOH solution and quantified. Further, in order to correct the concentration change due to evaporation of the dilute sulfuric acid aqueous solution, only the dilute sulfuric acid aqueous solution under the same conditions was similarly subjected to neutralization titration as the background (BG). And the cutting
- the molded sheet which has a carboxylic acid group was obtained by oxidizing the aldehyde group hold
- 5.0 wt% aqueous hydrogen peroxide adjusted to pH 9.0 with 2M NaOH aqueous solution is also used as the background (BG).
- the residual amount of hydrogen peroxide was calculated
- concentration of the hydrogen peroxide reduced by oxidation was calculated
- the oxidation rate of aldehyde groups on the surface layer of the molded sheet was about 90%.
- Residual H 2 O 2 [g] (Amount of H 2 O 2 reacting with 1 mL of 0.02M KMnO 4 ) [g / mL] ⁇ (Titration A) [mL] ⁇ (factor of 0.02M KMnO 4 ) ⁇ (dilution Rate) [wt%] x (collected amount) [wt%] (13)
- the properties of the molded sheet of polyurethane having a carboxylic acid group were evaluated as follows.
- the measurement was performed using a monitor latex dispersed in a 10 mM NaCl aqueous solution adjusted to pH 8.0 with a NaOH aqueous solution.
- the zeta potential of the molded sheet when the acid treatment process and the oxidation process were omitted was also measured for the molded sheet of PU1 of Example 1.
- the molded sheet of polyurethane having a carboxylic acid group was evaluated for affinity with a slurry using an intermolecular interaction measuring apparatus QCM-D manufactured by Q-Sense.
- the sample used was a Micasa spin coater MS-A100 coated with a polyurethane resin on a gold sensor.
- the slope at the beginning of adsorption was calculated and used as an index of affinity between the slurry and the sample.
- a film of PU1 having a thickness of 300 ⁇ m was produced by a hot press method. And the film of the polyurethane which has a carboxylic acid group was obtained by carrying out the modification process as mentioned above. The obtained film was allowed to stand for 3 days under the conditions of 20 ° C. and 65% RH, and the contact angle with water was measured using a DropMaster 500 manufactured by Kyowa Interface Science Co., Ltd.
- Table 2 also shows the zeta potential at each pH after acid treatment and oxidation of the molded sheet of PU1 of Example 1 and after acid treatment and oxidation.
- Polytetramethylene glycol (PTG650), DBIB, PD, and MDI having a number average molecular weight of 650 have a mass ratio of PTG650: DBIB: PD: MDI of 20.9: 14.1: 11.4: 53.6 (with DBIB).
- PD Using the PD at a ratio of 40/60), it was continuously supplied to a twin-screw extruder rotating coaxially by a metering pump, and continuous melt polymerization was carried out to produce a thermoplastic polyurethane.
- thermoplastic polyurethane melt was continuously extruded into water in a strand form, then chopped into pellets with a pelletizer, and the resulting pellets were dehumidified and dried at 80 ° C. for 20 hours to obtain a thermoplastic polyurethane (PU2) was produced. And it evaluated similarly except having used PU2 instead of PU1. The results are shown in Table 1.
- PTG850, N, N′-bissalicylideneethylenediamine (BSED), BD, and MDI have a mass ratio of PTG850: BSED: BD: MDI of 10.4: 17.7: 13.9: 58.1 (BSED And a BD molar ratio of 30/70), and continuously supplied to a twin-screw extruder rotating coaxially by a metering pump, to perform continuous melt polymerization to produce a thermoplastic polyurethane.
- the resulting thermoplastic polyurethane melt was continuously extruded into water in a strand form, then chopped into pellets with a pelletizer, and the resulting pellets were dehumidified and dried at 80 ° C. for 20 hours to obtain a thermoplastic polyurethane (PU4) was produced. And it evaluated similarly except having used PU4 instead of PU1. The results are shown in Table 1.
- thermoplastic melt was produced by continuous melt polymerization.
- the resulting thermoplastic polyurethane melt was continuously extruded into water in a strand form, then chopped into pellets with a pelletizer, and the resulting pellets were dehumidified and dried at 80 ° C. for 20 hours to obtain a thermoplastic polyurethane ( PU12) was produced. And it evaluated similarly except having used PU12 instead of PU1. In addition, since PU12 does not have a Schiff base, it is not modified even if it is subjected to an acid treatment or an oxidation treatment. The results are shown in Table 1.
- thermoplastic polyurethane (PU13) was produced. And it evaluated similarly except having used PU13 instead of PU1. In addition, since PU13 does not have a Schiff base, it is not modified even if it is subjected to an acid treatment or an oxidation treatment. The results are shown in Table 1.
- thermoplastic polyurethane (PU14) was produced. And it evaluated similarly except having used PU14 instead of PU1. In addition, since PU14 does not have a Schiff base, it is not modified even if it is subjected to an acid treatment or an oxidation treatment. The results are shown in Table 1.
- thermoplastic polyurethane was produced by continuously supplying to a twin screw extruder and performing continuous melt polymerization. The resulting thermoplastic polyurethane melt was continuously extruded into water in a strand form, then chopped into pellets with a pelletizer, and the resulting pellets were dehumidified and dried at 80 ° C. for 20 hours to obtain a thermoplastic polyurethane ( PU15) was produced. And it evaluated similarly except having used PU15 instead of PU1. In addition, since PU15 does not have a Schiff base, it is not modified even if it is subjected to an acid treatment or an oxidation treatment. The results are shown in Table 1.
- thermoplastic polyurethane was produced by continuously supplying to a twin screw extruder and performing continuous melt polymerization. The resulting thermoplastic polyurethane melt was continuously extruded into water in a strand form, then chopped into pellets with a pelletizer, and the resulting pellets were dehumidified and dried at 80 ° C. for 20 hours to obtain a thermoplastic polyurethane ( Manufactured as PU16). And it evaluated similarly except having used PU16 instead of PU1. In addition, since PU16 does not have a Schiff base, it is not modified even if it is subjected to an acid treatment or an oxidation treatment. The results are shown in Table 1.
- Polishing layers were produced using the polyurethanes PU1 to PU4 and PU11 to PU16 obtained in Examples 1 to 4 and Comparative Examples 1 to 6, and polishing pads composed of these polishing layers were evaluated.
- polishing pad was attached to a polishing apparatus “MAT-BC15” manufactured by MT Corporation. Then, using a diamond dresser (# 100-coverage 80%, diameter 19 cm, mass 1 kg) manufactured by Allied Material Co., Ltd., while flowing distilled water at a rate of 150 mL / min, the dresser rotational speed 140 rpm, the platen rotational speed 100 rpm The pad surface was conditioned for 1 hour. Next, a slurry having a pH of 4.0 was prepared by diluting the slurry stock solution twice.
- a 4 inch silicon wafer was polished for 60 seconds. Then, after polishing for 60 seconds, the polishing pad was conditioned for 30 seconds. Then, another silicon wafer was polished again and further conditioned for 30 seconds. In this way, 10 silicon wafers were polished.
- the film thickness of the silicon oxide film before and after polishing the 10th wafer was measured at 49 points on the wafer surface to determine the polishing rate at each point. Specifically, the average value of 49 polishing rates was defined as the polishing rate.
- a spot with an Rf value of 0 which is purple with the ninhydrin reagent without UV absorption is 3-amino-1-propanol
- a spot with an Rf value of 0.20 which is UV-absorbed and is reddish with the ninhydrin reagent is 3-[ ⁇ 4 -[(3-Hydroxy- ⁇ ⁇ propylimino) -methyl] -benzylidene ⁇ -amino] -propan-1-ol
- UV absorption, spot with Rf value 0.63 which was not colored with ninhydrin reagent is terephthalaldehyde, Respectively.
- the thermal decomposition temperature of the obtained crystal was set to 30 ° C. at a rate of temperature increase of 10 ° C./min in a nitrogen atmosphere using a differential thermobalance (trade name: TG8120, manufactured by Rigaku). To 500 ° C. The thermal decomposition temperature was 228 ° C.
- PTG850 Polytetramethylene glycol having a number average molecular weight of 850, 3-[ ⁇ 4-[(3-hydroxy-propylimino) -methyl] -benzylidene ⁇ -amino] -propan-1-ol obtained in Production Example 3 1,4-butanediol (BD), and 4,4′-diphenylmethane diisocyanate (MDI) are converted into PTG850: 3-[ ⁇ 4-[(3-hydroxy-propylimino) -methyl] -benzylidene ⁇ -amino].
- BD 1,4-butanediol
- MDI 4,4′-diphenylmethane diisocyanate
- thermoplastic polyurethane (PU5) was produced.
- a molded sheet having a thickness of 0.3 to 0.5 mm was formed by pressing and molding pellets (5 to 14 g) sandwiched between Teflon sheets at 200 to 230 ° C. using a heat press. . Then, the resulting molded sheet is immersed in an aqueous solution of dilute sulfuric acid (10% by mass) at 50 ° C. having a pH of 1.75 for 2 days to cut the Schiff base on the surface of the molded sheet as shown in FIG. By releasing terephthalaldehyde, a polyurethane molded sheet having an amino group was obtained.
- polyurethane having an amino group can be obtained by acid treatment of PU5.
- the polyurethane having such an amino group has a high zeta potential at each pH.
- a polishing layer containing a polyurethane having an amino group on the surface is used, a polishing layer having a positive zeta potential and a high affinity for abrasive grains having a negative zeta potential is obtained even in the basic region. It is preferable from the point of being.
- Example 2 Production of nonwoven sheet containing polyurethane having Schiff base and surface modification of nonwoven sheet
- a pellet PU1 produced in the same manner as in Example 1 was prepared. And the pellet of PU1 was produced by implementing the surface modification process similar to Example 1 to the pellet PU1. This pellet was dissolved in DMF to prepare a polyurethane solution (concentration: 13% by mass). And the nonwoven fabric sheet containing the polyurethane which has a Schiff base was manufactured by impregnating and giving a polyurethane solution by carrying out the dip nip process to a nonwoven fabric, and making it coagulate
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Abstract
Description
R1-N=C-R2・・・(1)
(式(1)中、R1はアルキル基,アルケニル基,ヒドロキシフェニル基,アミノフェニル基,ヒドロキシベンジルイミノ基、アミノベンジルイミノ基、またはそれらを含有する基であり、R2は、R1がアルキル基またはアルケニルを含有する基のときにはジヒドロキシフェニル基を含有する基、R1がヒドロキシフェニル基またはアミノフェニル基を含有する基であるときにはヒドロキシフェニル基を含有する基,R1がヒドロキシベンジルイミノ基またはアミノベンジルイミノ基を含有する基であるときにはヒドロキシフェニル基を含有する基であり、R1及びR2はそれぞれ置換基を有してもよい)で表されるシッフ塩基含有ジオールが挙げられる。また、その具体例としては、例えば、2,4-ジヒドロキシベンゼン-1-イミノブタン,2,4-ジヒドロキシベンゼン-1-イミノプロパン,N,N’-ビスサリチリデンエチレンジアミン, 2-サリチリデンアミノフェノール,4-[(3-ジメチルアミノ-プロピルイミノ)-メチル]-ベンゼン-1,3-ジオール及び3-〔{4-[(3-ヒドロキシ- プロピルイミノ)-メチル]-ベンジリデン}-アミノ〕-プロパン-1-オール等が挙げられる。
本実施形態のポリウレタン製造原料として用いられるシッフ塩基含有鎖伸長剤は、シッフ塩基を有するジオールまたはジアミンまたはそれらの誘導体である。具体的には、例えば、下記一般式(1):
R1-N=C-R2・・・(1)
(式(1)中、R1はアルキル基,アルケニル基,ヒドロキシフェニル基,アミノフェニル基,ヒドロキシベンジルイミノ基、アミノベンジルイミノ基、またはそれらを含有する基であり、R2は、R1がアルキル基またはアルケニルを含有する基のときにはジヒドロキシフェニル基を含有する基、R1がヒドロキシフェニル基またはアミノフェニル基を含有する基であるときにはヒドロキシフェニル基を含有する基,R1がヒドロキシベンジルイミノ基またはアミノベンジルイミノ基を含有する基であるときにはヒドロキシフェニル基を含有する基であり、R1及びR2はそれぞれ置換基を有してもよい)
で表されるシッフ塩基を含有する少なくとも2つ以上の水酸基を有するシッフ塩基含有ジオール、少なくとも2つ以上のアミノ基を有するシッフ塩基含有ジアミン、またはそれらの誘導体を例示することができる。なお、誘導体としては、例えば、水酸基を酸化させてカルボキシル基化した化合物が挙げられる。
以下、シッフ塩基含有鎖伸長剤を製造原料として用いて製造される、シッフ塩基を有するポリウレタンの一例として、熱可塑性ポリウレタンについて代表例として詳しく説明する。
上述したような本実施形態のポリウレタンは、上述した特性を活かして、非発泡体または発泡体のポリウレタン成形体を研磨層として備える研磨パッドや、不織布の内部空隙にポリウレタンを含ませた不織布タイプの研磨層、注型発泡硬化することによって製造されるポリウレタン発泡体を主体とする研磨層等、種々のタイプの研磨層のポリウレタン材料として用いられる。また、ポリウレタンとしては熱可塑性ポリウレタンでも熱硬化性ポリウレタンであってもよい。以下、本実施形態のポリウレタンを用いた、研磨パッドの特性や形態について詳しく説明する。
例えば、CMPに用いられるスラリーとしては、酸性のスラリーやアルカリ性のスラリーがある。酸性のスラリーとアルカリ性のスラリーとは、研磨の目的に応じて選択されたり、多段の研磨プロセスを行う場合にそれらを併用したりして用いられる。アルカリ性のスラリーに含まれる砥粒は、通常、負のゼータ電位を有する。アルカリ性のスラリーを使用した場合にゼータ電位が負になる研磨層を用いた場合、研磨層のゼータ電位を負に保つことができ、それにより、研磨層に研磨屑が付着しにくくなってスクラッチやディフェクトの発生が低減する効果が発現されると思われる。しかしながら、アルカリ性においてゼータ電位が負になる研磨層の場合、酸性のスラリーを用いた場合には、ゼータ電位が正になることが多かった。
CMPに用いられるスラリーは、通常、水等の水系媒体を用いた水系の分散液である。そのために、CMPに用いられる研磨パッドのスラリーに接触する研磨層の表面の親水性が高ければ高いほど、スラリーとの親和性も高くなる。
本実施形態の表面にアミノ基を有するポリウレタンを素材として用いた研磨層によれば、塩基性領域においてもゼータ電位が正になる研磨層を提供することが出来る。正のゼータ電位を示す研磨層と、負のゼータ電位を示すスラリーの間に高い親和性が発現することにより、研磨速度が向上すると考えられる点から、塩基性領域でゼータ電位がより正になる研磨層を用いることが好ましいと思われる。
上述のように例示された各ポリウレタンとしては、50℃の水で飽和膨潤させた後の50℃における貯蔵弾性率が50~1200MPa、さらには100~1100MPa、とくには200~1000MPaであることが好ましい。ポリウレタンの50℃の水で飽和膨潤させた後の50℃における貯蔵弾性率が低すぎる場合には研磨層が柔らかくなりすぎて研磨速度が低下し、高すぎる場合には被研磨物の被研磨面にスクラッチが増加する傾向がある。
本実施形態のポリウレタンは、非発泡体または発泡体のポリウレタン成形体を研磨層として備える研磨パッド,不織布の内部空隙にポリウレタンを含ませた不織布タイプの研磨層、注型発泡硬化することによって製造されるポリウレタン発泡体を主体とする研磨層等、種々のタイプの研磨層のポリウレタン材料として用いられる。また、ポリウレタンとしては熱可塑性ポリウレタンでも熱硬化性ポリウレタンであってもよい。これらの中では、連続溶融重合により連続生産可能であり、シート成形性にも優れる点からは、熱可塑性ポリウレタン成形体の研磨層が好ましい。また、研磨特性が変動しにくく安定した研磨が実現できる点から非発泡体の熱可塑性ポリウレタン成形体の研磨層がとくに好ましい。例えば、注型発泡硬化することによって製造されるポリウレタン発泡体を用いた研磨層の場合には、発泡構造がばらつくことにより、平坦性や平坦化効率等の研磨特性が変動しやすくなる傾向があり、また、平坦性を向上させるための高硬度化が難しくなる傾向がある。
研磨層は、例えば、ポリウレタンのシート状の成形体や不織布タイプの成形体を切削,スライス,打ち抜き加工等により寸法、形状、厚さ等を調整することにより研磨層に仕上げられる。研磨層の厚さは特に限定されないが、0.3~5mm、さらには1.7~2.8mm、とくには2.0~2.5mmであることが生産や取り扱いのしやすさ、研磨性能の安定性から好ましい。
次に、上述したような研磨パッドを用いたCMPの一実施形態について説明する。
また、キャリア4は被研磨物5を支持する。
(2,4 -ジヒドロキシベンゼン-1-イミノブタンの合成)
シッフ塩基含有鎖伸長剤として用いられるシッフ塩基含有ジオールとして、2,4 -ジヒドロキシベンゼン-1-イミノブタン(DBIB)の合成について説明する。
(4-[(3-ジメチルアミノ-プロピルイミノ)-メチル]-ベンゼン-1,3-ジオールの合成)
シッフ塩基含有鎖伸長剤として用いられるシッフ塩基含有ジオールとして、4-[(3-ジメチルアミノ-プロピルイミノ)-メチル]-ベンゼン-1,3-ジオールの合成について説明する。
数平均分子量850のポリテトラメチレングリコール(PTG850)、製造例1で得られたDBIB、1,5-ペンタンジオール(PD)、および4,4'-ジフェニルメタンジイソシアネート(MDI)を、PTG850:DBIB:PD:MDIの質量比が23.6:7.2:15.5:53.6(DBIBとPDのモル比が20/80)となる割合で用いて、定量ポンプにより同軸で回転する2軸押出機に連続的に供給して、連続溶融重合を行ってシッフ塩基を有する熱可塑性ポリウレタンを製造した。生成した熱可塑性ポリウレタンの溶融物をストランド状に水中に連続的に押出した後、ペレタイザーでペレット状に細断し、得られたペレットを80℃で20時間除湿乾燥することにより、熱可塑性ポリウレタン(PU1)を製造した。
熱プレス機を用いて、テフロン(登録商標)シートに挟んだPU1のペレット(5~14g)を200~230℃でプレスして成形することにより厚さ0.3~0.5mmのシッフ塩基を有するポリウレタンの成形シートを成形した。そして、シッフ塩基を有するポリウレタンの成形シートをpH1.75の40℃の希硫酸(10質量%)水溶液中に4日間浸漬して酸処理することにより、図1に示すように成形シートのポリウレタンに保持されたシッフ塩基を切断してブチルアミンを遊離させて、成形シートにアルデヒド基を保持させた。なお、アルデヒド基を有するポリウレタンの成形シートのシッフ塩基の切断率は次のようにして確認した。
遊離アミン量[mol]= 減少希硫酸量(=(BG-sample入り))×2・・・(12)
30mm×60mmに切り出したカルボン酸基を有するポリウレタンの成形シートの表面を洗浄した。そして、電気泳動光散乱装置(ELS-Z、大塚電子(株)製)を使用し、平板測定用セルにサンプルを取り付け、pH3.0、及びpH4.0にHCl水溶液で調整した10mM NaCl水溶液中に分散したモニターラテックス(大塚電子(株)製)を用いて測定した。同様に、pH8.0にNaOH水溶液で調整した10mM NaCl水溶液中に分散したモニターラテックスを用いても測定を行った。なお、代表例として実施例1のPU1の成形シートについて、酸処理の工程と酸化の工程とを省略したときの成形シートのゼータ電位も測定した。
カルボン酸基を有するポリウレタンの成形シートについてQ-Sense社製の分子間相互作用測定装置QCM-Dを用いて、スラリーとの親和性を評価した。サンプルはMicasa社製スピンコーターMS-A100を用いて、金センサー上にポリウレタン樹脂をコートしたものを使用した。pH=3.0, 3.5, 5.5, 9.0の条件で流速50μl/min、スラリー濃度1wt%(水溶液)、測定温度30℃の条件下で測定を行った。吸着時間と吸着量の関係を示すグラフにおいて吸着開始初期の傾きを算出し、スラリーとサンプルとの間における親和性の指標とした。
熱プレス法により厚さ300μmのPU1のフィルムを作製した。そして、上述のように改質処理することにより、カルボン酸基を有するポリウレタンのフィルムを得た。
そして得られたフィルムを20℃、65%RHの条件下に3日間放置した後、協和界面科学(株)製DropMaster500を用いて水に対する接触角を測定した。
幅5mm、長さ30mm、厚さ2mmのPU-1の射出成形シートを作製した。そして、上述のように改質処理することにより、カルボン酸基を有するポリウレタンの成形体を得た。そして、射出成形シートを50℃の水に3日間浸漬した。そして水から取り出した射出成形シートの表面の水を拭いた後、動的粘弾性測定装置(「DVEレオスペクトラー」、(株)レオロジー製)を使用して、50℃における動的粘弾性率を周波数11Hzで測定することにより、貯蔵弾性率を求めた。
数平均分子量650のポリテトラメチレングリコール(PTG650)、DBIB、PD、およびMDIを、PTG650:DBIB:PD:MDIの質量比が20.9:14.1:11.4:53.6(DBIBとPDのモル比が40/60)になる割合で用いて、定量ポンプにより同軸で回転する2軸押出機に連続的に供給して、連続溶融重合を行って熱可塑性ポリウレタンを製造した。生成した熱可塑性ポリウレタンの溶融物をストランド状に水中に連続的に押出した後、ペレタイザーでペレット状に細断し、得られたペレットを80℃で20時間除湿乾燥することにより、熱可塑性ポリウレタン(PU2)を製造した。そして、PU1の代わりにPU2を用いた以外は同様にして評価した。結果を表1に示す。
PTG850、DBIB、1,4-ブタンジオール(BD)、およびMDIを、PTG850:DBIB:BD:MDIの質量比が26.0:7.1:13.2:53.6(DBIBとBDのモル比が20/80)となる割合で用いて、定量ポンプにより同軸で回転する2軸押出機に連続的に供給して、連続溶融重合を行って熱可塑性ポリウレタンを製造した。生成した熱可塑性ポリウレタンの溶融物をストランド状に水中に連続的に押出した後、ペレタイザーでペレット状に細断し、得られたペレットを80℃で20時間除湿乾燥することにより、熱可塑性ポリウレタン(PU3)を製造した。そして、PU1の代わりにPU3を用いた以外は同様にして評価した。結果を表1に示す。
PTG850、N,N’-ビスサリチリデンエチレンジアミン(BSED)、BD、およびMDIを、PTG850:BSED:BD:MDIの質量比が10.4:17.7:13.9:58.1(BSEDとBDのモル比が30/70)となる割合で用いて、定量ポンプにより同軸で回転する2軸押出機に連続的に供給して、連続溶融重合を行って熱可塑性ポリウレタンを製造した。生成した熱可塑性ポリウレタンの溶融物をストランド状に水中に連続的に押出した後、ペレタイザーでペレット状に細断し、得られたペレットを80℃で20時間除湿乾燥することにより、熱可塑性ポリウレタン(PU4)を製造した。そして、PU1の代わりにPU4を用いた以外は同様にして評価した。結果を表1に示す。
PTG850、BD、メチルペンタンジオール(MPD)、およびMDIを、PTG850:BD:MPD:MDIの質量比が19.0:14.7:6.4:59.9となる割合で用いて、定量ポンプにより同軸で回転する2軸押出機に連続的に供給して、連続溶融重合を行って熱可塑性ポリウレタンを製造した。生成した熱可塑性ポリウレタンの溶融物をストランド状に水中に連続的に押出した後、ペレタイザーでペレット状に細断し、得られたペレットを80℃で20時間除湿乾燥することにより、熱可塑性ポリウレタン(PU11)を製造した。そして、PU1の代わりにPU11を用いた以外は同様にして評価した。なお、PU11はシッフ塩基を有しないために、酸性下での処理や酸化処理をしても改質されない。結果を表1に示す。
PTG850、BD、およびMDIを、PTG850:BD:MDIの質量比が46.7:7.4:45.9となる割合で用いて、定量ポンプにより同軸で回転する2軸押出機に連続的に供給して、連続溶融重合を行って熱可塑性ポリウレタンを製造した。生成した熱可塑性ポリウレタンの溶融物をストランド状に水中に連続的に押出した後、ペレタイザーでペレット状に細断し、得られたペレットを80℃で20時間除湿乾燥することにより、熱可塑性ポリウレタン(PU12)を製造した。そして、PU1の代わりにPU12を用いた以外は同様にして評価した。なお、PU12はシッフ塩基を有しないために、酸性下での処理や酸化処理をしても改質されない。結果を表1に示す。
数平均分子量600のポリエチレングリコール(PEG600)、PTG850、BD、およびMDIを、PEG600:PTG850:BD:MDIの質量比が17.4:16.4:14.3:51.9となる割合で用いて、定量ポンプにより同軸で回転する2軸押出機に連続的に供給して、連続溶融重合を行って熱可塑性ポリウレタンを製造した。生成した熱可塑性ポリウレタンの溶融物をストランド状に水中に連続的に押出した後、ペレタイザーでペレット状に細断し、得られたペレットを80℃で20時間除湿乾燥することにより、熱可塑性ポリウレタン(PU13)を製造した。そして、PU1の代わりにPU13を用いた以外は同様にして評価した。なお、PU13はシッフ塩基を有しないために、酸性下での処理や酸化処理をしても改質されない。結果を表1に示す。
数平均分子量2000のポリカーボネートジオール(PCD2000)、BD、PD、およびMDIを、PCD2000:BD:PD:MDIの質量比が19.5:5.0:17.4:58.1となる割合で用いて、定量ポンプにより同軸で回転する2軸押出機に連続的に供給して、連続溶融重合を行って熱可塑性ポリウレタンを製造した。生成した熱可塑性ポリウレタンの溶融物をストランド状に水中に連続的に押出した後、ペレタイザーでペレット状に細断し、得られたペレットを80℃で20時間除湿乾燥することにより、熱可塑性ポリウレタン(PU14)を製造した。そして、PU1の代わりにPU14を用いた以外は同様にして評価した。なお、PU14はシッフ塩基を有しないために、酸性下での処理や酸化処理をしても改質されない。結果を表1に示す。
PTG850、BD、MPD、およびMDIを、PTG850:BD:MPD:MDIの質量比が10.3:15.7:8.8:65.2となる割合で用いて、定量ポンプにより同軸で回転する2軸押出機に連続的に供給して、連続溶融重合を行って熱可塑性ポリウレタンを製造した。生成した熱可塑性ポリウレタンの溶融物をストランド状に水中に連続的に押出した後、ペレタイザーでペレット状に細断し、得られたペレットを80℃で20時間除湿乾燥することにより、熱可塑性ポリウレタン(PU15)を製造した。そして、PU1の代わりにPU15を用いた以外は同様にして評価した。なお、PU15はシッフ塩基を有しないために、酸性下での処理や酸化処理をしても改質されない。結果を表1に示す。
PEG600、BD、MPD、およびMDIを、PEG600:BD:MPD:MDIの質量比が10.8:15.3:8.6:65.3となる割合で用いて、定量ポンプにより同軸で回転する2軸押出機に連続的に供給して、連続溶融重合を行って熱可塑性ポリウレタンを製造した。生成した熱可塑性ポリウレタンの溶融物をストランド状に水中に連続的に押出した後、ペレタイザーでペレット状に細断し、得られたペレットを80℃で20時間除湿乾燥することにより、熱可塑性ポリウレタン(PU16という)を製造した。そして、PU1の代わりにPU16を用いた以外は同様にして評価した。なお、PU16はシッフ塩基を有しないために、酸性下での処理や酸化処理をしても改質されない。結果を表1に示す。
実施例1~4、及び比較例1~6で得られたポリウレタンPU1~PU4及びPU11~PU16を用いて研磨層を製造し、それらの研磨層からなる研磨パッドを評価した。
PU1~PU4及びPU11~PU16のペレットを単軸押出成形機に供給し、T-ダイより押出すことにより、厚さ2.0mmのシートを成形した。そして、得られたシートの表面を研削して厚さ1.5mmの均一なシートとした後、幅1.0mm、深さ1.0mmの溝を6.5mm間隔で同心円状に形成し、直径が380mmの円形状の研磨パッドを作製した。そして、上述した「シッフ塩基を有するポリウレタンの成形シートの作成及び成形シートの表面改質」で行った処理条件と同様の条件で各研磨パッドを処理した。そして、得られた研磨パッドを(株)エム・エー・ティ製の研磨装置「MAT-BC15」に装着した。そして、(株)アライドマテリアル製のダイヤモンドドレッサー(#100-被覆率80%、直径19cm、質量1kg)を用い、蒸留水を150mL/分の速度で流しながら、ドレッサー回転数140rpm、プラテン回転数100rpm、1時間の条件でパッド表面のコンディショニングを行った。次に、スラリー原液を2倍に希釈して調整したpH4.0のスラリーを準備した。そして、プラテン回転数100rpm、ヘッド回転数99rpm、研磨圧力27.6kPaの条件において、120mL/分の速度でスラリーを研磨パッドの研磨面に供給しながら膜厚1000nmの酸化ケイ素膜を表面に有する直径4インチのシリコンウェハを60秒間研磨した。そして、60秒間の研磨後、研磨パッドのコンディショニングを30秒間行った。そして、別のシリコンウェハを再度研磨し、さらに、30秒間コンディショニングを行った。このようにして10枚のシリコンウェハを研磨した。
(推定値算出方法)
PU11~PU16を含むポリウレタンの親和性初期傾きと砥粒との関係の既知のデータに基づいて、下記式(14)の近似式を算出した。そして、式(14)のXにPU1~PU4の実施例における親和性初期傾きを代入することにより、Y値である研磨速度の推定値を算出した。
Y=0.1658*X+368.36 ・・・(14)
(3-〔{4-[(3-ヒドロキシ- プロピルイミノ)-メチル]-ベンジリデン}-アミノ〕-プロパン-1-オールの合成)
シッフ塩基含有鎖伸長剤として用いられるシッフ塩基含有ジオールとして、3-〔{4-[(3-ヒドロキシ- プロピルイミノ)-メチル]-ベンジリデン}-アミノ〕-プロパン-1-オールの合成について説明する。
数平均分子量850のポリテトラメチレングリコール(PTG850)、製造例3で得られた3-〔{4-[(3-ヒドロキシ- プロピルイミノ)-メチル]-ベンジリデン}-アミノ〕-プロパン-1-オール、1,4-ブタンジオール(BD)、および4,4'-ジフェニルメタンジイソシアネート(MDI)を、PTG850:3-〔{4-[(3-ヒドロキシ- プロピルイミノ)-メチル]-ベンジリデン}-アミノ〕-プロパン-1-オール:BD:MDIの質量比が31.5:7.9:11.5:49.1(3-〔{4-[(3-ヒドロキシ- プロピルイミノ)-メチル]-ベンジリデン}-アミノ〕-プロパン-1-オールとBDのモル比が20/80)となる割合で用いて、定量ポンプにより同軸で回転する2軸押出機に連続的に供給して、連続溶融重合を行ってシッフ塩基を有する熱可塑性ポリウレタンを製造した。生成した熱可塑性ポリウレタンの溶融物をストランド状に水中に連続的に押出した後、ペレタイザーでペレット状に細断し、得られたペレットを80℃で20時間除湿乾燥することにより、熱可塑性ポリウレタン(PU5)を製造した。
PU5を、熱プレス機を用いて、テフロンシートに挟んだペレット(5~14g)を200~230℃にてプレスして成形することにより厚さ0.3~0.5mmの成形シートを成形した。そして、得られた成形シートをpH1.75の50℃の希硫酸(10質量%)水溶液中に2日間浸漬して酸処理することにより、図4に示すように成形シート表層のシッフ塩基を切断してテレフタルアルデヒドを遊離させることにより、アミノ基を有するポリウレタンの成形シートを得た。
(ゼータ電位の測定)
30mm×60mmに切り出した成形シートの表面を洗浄した。そして、電気泳動光散乱装置(ELS-Z、大塚電子(株)製)を使用し、平板測定用セルにサンプルを取り付け、pH3.0にHCl水溶液で調整した10mM NaCl水溶液中に分散したモニターラテックス(大塚電子(株)製)を用いて測定した。同様に、pH5.0にHCl水溶液及びNaOH水溶液で調整した10mM NaCl水溶液中に分散したモニターラテックスを用いても測定を行った。また同様に、pH8.0にNaOH水溶液で調整した10mM NaCl水溶液中に分散したモニターラテックスを用いても測定を行った。なお、比較として、酸処理の工程を省略したときの成形シートのゼータ電位も測定した。
実施例1と同様にして作製したペレットPU1を準備した。そして、ペレットPU1に、実施例1と同様の表面改質処理を実施することにより、カルボン酸を有するポリウレタンのペレットを作製した。このペレットをDMFに溶解させて、ポリウレタン溶液(濃度13質量%)を調製した。そして、ポリウレタン溶液を不織布にディップニップ処理することにより含浸付与し、凝固させることにより、シッフ塩基を有するポリウレタンを含有する不織布シートを製造した。なお、不織布は、ポリエステル系樹脂から成る不織布を用いた。このようにして得られた不織布シートは、ポリウレタンを20質量%含有し、見掛け密度が0.40g/cm3であった。なお、比較のために、表面処理を実施しなかったPU1を用いて、同様にして不織布シートを製造した。
2 回転定盤
3 スラリー供給ノズル
4 キャリア
5 被研磨物
6 パッドコンディショナー
7 スラリー
10 CMP装置
Claims (15)
- ポリウレタン製造原料として用いられる鎖伸長剤であって、シッフ塩基含有ジオール,シッフ塩基含有ジアミンまたはそれらの誘導体であるシッフ塩基含有鎖伸長剤。
- 下記一般式(1):
R1-N=C-R2・・・(1)
(式(1)中、R1はアルキル基,アルケニル基,ヒドロキシフェニル基,アミノフェニル基,ヒドロキシベンジルイミノ基、アミノベンジルイミノ基、またはそれらを含有する基であり、R2は、R1がアルキル基またはアルケニルを含有する基のときにはジヒドロキシフェニル基を含有する基、R1がヒドロキシフェニル基またはアミノフェニル基を含有する基であるときにはヒドロキシフェニル基を含有する基,R1がヒドロキシベンジルイミノ基またはアミノベンジルイミノ基を含有する基であるときにはヒドロキシフェニル基を含有する基であり、R1及びR2はそれぞれ置換基を有してもよい)
で表される請求項1に記載のシッフ塩基含有鎖伸長剤。 - 2,4-ジヒドロキシベンゼン-1-イミノブタン, 2,4-ジヒドロキシベンゼン-1-イミノプロパン,N,N’-ビスサリチリデンエチレンジアミン,2-サリチリデンアミノフェノール,4-[(3-ジメチルアミノ-プロピルイミノ)-メチル]-ベンゼン-1,3-ジオール,または3-〔{4-[(3-ヒドロキシ-プロピルイミノ)-メチル]-ベンジリデン}-アミノ〕-プロパン-1-オールである請求項1または請求項2に記載のシッフ塩基含有鎖伸長剤。
- シッフ塩基を有するポリウレタン。
- シッフ塩基含有鎖伸長剤に由来するモノマー単位を含む請求項4に記載のポリウレタン。
- 前記シッフ塩基含有鎖伸長剤を含む鎖伸長剤に由来するモノマー単位と、高分子ジオールに由来するモノマー単位と、有機ジイソシアネートに由来するモノマー単位とを少なくとも含むポリウレタンである請求項5に記載のポリウレタン。
- 前記シッフ塩基含有鎖伸長剤に由来するモノマー単位が、シッフ塩基,アルデヒド基,カルボン酸基,水酸基,及びアミノ基から選ばれる少なくとも1種の官能基を有する請求項5または請求項6に記載のポリウレタン。
- シッフ塩基を有するポリウレタンを準備する工程と、
アルデヒド基,カルボン酸基,水酸基,及びアミノ基から選ばれる少なくとも1種の官能基を保持させる後処理を行う工程と、を備えるポリウレタンの改質方法。 - アルデヒド基,カルボン酸基,水酸基,及びアミノ基から選ばれる少なくとも1種の官能基を有するポリウレタンを含む研磨層。
- カルボン酸基を有し、pH3.0におけるゼータ電位が-1.0mV以下である請求項9に記載の研磨層。
- 前記ポリウレタンが非発泡体である請求項9または10の何れか1項に記載の研磨層。
- 不織布と、不織布に含浸付与された前記ポリウレタンとを含む請求項9~11の何れか1項に記載の研磨層。
- 50℃の水で飽和膨潤させた後の50℃における貯蔵弾性率が50~1200MPaで、且つ、水との接触角が80度以下である請求項9~12の何れか1項に記載の研磨層。
- 請求項9~13の何れか1項に記載の研磨層を含む研磨パッド。
- カルボン酸基を有し、pH3.0におけるゼータ電位が-1.0mV以下である研磨層を備える研磨パッドを研磨装置の定盤上に固定する工程と、
前記研磨パッドの前記研磨層の研磨面に対面するように被研磨物を研磨装置のホルダに保持させる工程と、前記研磨面と前記被研磨物との間に酸性の研磨スラリーを供給しながら、前記研磨パッドと前記被研磨物とを相対的に摺動させることにより前記被研磨物を研磨する工程と、を備えることを特徴とする研磨方法。
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JP6993513B2 (ja) | 2018-08-11 | 2022-01-13 | 株式会社クラレ | 研磨層用ポリウレタン、研磨層及び研磨パッド |
CN114787225A (zh) * | 2019-12-13 | 2022-07-22 | 株式会社可乐丽 | 聚氨酯、抛光层、抛光垫及抛光方法 |
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CN110573547A (zh) | 2019-12-13 |
IL270416B1 (en) | 2023-07-01 |
US20210087325A1 (en) | 2021-03-25 |
US20200190247A1 (en) | 2020-06-18 |
TW201902969A (zh) | 2019-01-16 |
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US11053339B2 (en) | 2021-07-06 |
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US11787894B2 (en) | 2023-10-17 |
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