WO2018205455A1 - 采用csp芯片和倒装蓝光led芯片封装的白光led cob的结构及制备方法 - Google Patents

采用csp芯片和倒装蓝光led芯片封装的白光led cob的结构及制备方法 Download PDF

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Publication number
WO2018205455A1
WO2018205455A1 PCT/CN2017/099439 CN2017099439W WO2018205455A1 WO 2018205455 A1 WO2018205455 A1 WO 2018205455A1 CN 2017099439 W CN2017099439 W CN 2017099439W WO 2018205455 A1 WO2018205455 A1 WO 2018205455A1
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chip
color temperature
blue led
flip
cob
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PCT/CN2017/099439
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English (en)
French (fr)
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孙国喜
申崇渝
石建青
刘国旭
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易美芯光（北京）科技有限公司
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Publication of WO2018205455A1 publication Critical patent/WO2018205455A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the invention belongs to the field of illumination, and in particular relates to a structure and a preparation method of a white LED COB packaged by using a CSP chip and a flip-chip blue LED chip.
  • the so-called CSP light source refers to a type of LED device, the core part of which is a flip-chip blue chip of sapphire substrate, except for one side of the soldering leg with positive and negative electrodes, part of its surface is covered by a phosphor film.
  • the positive and negative solder fillets are connected to the applied circuit substrate by soldering. Since the CSP light source only uses the phosphor silica gel film to cover the structure of the flip chip, most of the packaging steps and structures of the conventional LED light source are eliminated, so that the package size is small, and the package volume is not larger than the volume of the flip chip. %.
  • the CSP light source is energized, the phosphors in the blue and silica gels are combined by other colors of light emitted by the blue light to form different color temperatures and indicative white light.
  • CSP light sources there are three main types: as shown in Fig. 1a - Fig. 1c, the surrounding and upper surfaces of the structure 1, the chip are completely covered with silica gel mixed with phosphor, and only the bottom electrode of the chip is exposed, and the patch passes directly through the patch.
  • Solder is mounted on the PCB.
  • Structure 2 the white wall around the chip is four, the height of the white wall is the same as the height of the chip.
  • the surface of the chip and the white wall is covered with a layer of silica gel mixed with phosphor, and only the bottom electrode of the chip is exposed.
  • Structure 3 a thin phosphor film wraps the whole chip, and the surface of the phosphor film is covered with a thick transparent silica gel.
  • the entire chip only leaks out of the bottom electrode, and the patch is directly soldered on the PCB. .
  • the commonly used flip-chip sapphire substrate GaN blue LED is shown in Figure 3.
  • the technique used is to invert the chip.
  • the P-type electrode uses a high-reflection film or metal covering the entire Mesa, so that light is emitted from the sapphire substrate.
  • the upper surface is free of electrode metal shielding, and the light extraction efficiency is improved; the current distribution is uniform, resulting in voltage reduction and light efficiency improvement; LI has better
  • the 2.4-gauge GaN, the combination of sapphire and silica gel and phosphor, and the total reflection critical angle of GaN and silica gel and phosphor combination are 51.1-70.8 degrees and 6.7-45.1 degrees, respectively, in the package structure by sapphire
  • the light emitted from the stone surface passes through the critical angle of total reflection of the silica gel and the phosphor interface layer, and the total reflection loss of the light is greatly reduced.
  • the light extraction efficiency is improved; the surface temperature of the sapphire directly contacting the phosphor is low, the efficiency of the phosphor is improved, the light extraction efficiency is high, and the reliability is increased; the chip junction is close to the package substrate, the junction temperature is low, the thermal resistance is lowered, the light extraction efficiency is improved, and the chip is reliable. Increase in sex.
  • LED COB refers to the assembly of array LED chips on a substrate such as PCB or ceramic.
  • the dam is surrounded by a circular and other shaped light-emitting surface or LES, and the silica gel mixed with phosphor is covered on the chip. Lighting the array LED chip causes the entire LES to emit a white light source.
  • Method 1 As shown in Fig. 5a, the blue chip is directly packaged on the substrate.
  • the periphery of the chip has a circular or other shaped dam.
  • the surface of the chip in the dam is covered with silica gel mixed with phosphor.
  • Method 2 As shown in Figure 5b, using the same kind of blue chip, different color temperature fluorescent glue, using the dam glue or cup, etc., the area is distributed with different color temperature phosphor silica gel to achieve adjustable color temperature.
  • Method 3 As shown in Fig. 5c, firstly surround the dam and then place a cool color temperature phosphor silica gel inside the dam, then place a warm color temperature phosphor silica gel on top of some chips to adjust the chip current under different warm color temperatures.
  • the color temperature is adjustable.
  • Method 4 As shown in Fig. 5d, in the form of CSP COB, CSPs of different color temperatures, usually warm colors and cool colors, are directly attached to the COB substrate by SMT method to form a light-emitting surface (LES), and CSPs of different color temperatures are uniformly or symmetrically distributed.
  • LES light-emitting surface
  • the current COB board structure has the following problems: the current strip color COB has a large variation in the near-field color temperature, and the color space distribution is uneven.
  • the existing pure CSP light source can be used to condense COB with uneven color space distribution, uneven brightness, and easy entry of ash into the CSP light source.
  • the object of the present invention is to provide a structure and a preparation method of a white LED COB packaged by using a CSP chip and a flip-chip blue LED chip package, which can solve the problems of difficulty and complexity of the color COB process, and realize simple and efficient customization of the condensable COB. Production.
  • the structure of white LED COB packaged by CSP chip and flip-chip blue LED chip includes: flip-chip blue LED chip, low color temperature CSP light source, high color temperature phosphor powder silica gel;
  • a plurality of the inverted blue LED chips are connected in parallel, and the plurality of low color temperature CSP light sources are connected in parallel; the inverted blue LED chips connected in parallel are connected to a positive electrode and a negative electrode to form a plurality of inverted blue LED chip circuits.
  • the plurality of strings of the low color temperature CSP light sources are connected in common to one positive electrode and one negative electrode to form a plurality of strings of low color temperature CSP light source circuits; the plurality of strings of inverted blue LED chip circuits and the plurality of strings of low color temperature CSP light source circuits are formed Dual circuit structure;
  • the plurality of series-connected flip-chip blue LED chips and the plurality of parallel connected low color temperature CSP light sources are connected in parallel to be connected to one positive electrode and one negative electrode to form a plurality of strings of inverted blue LED chips and a plurality of strings of low color temperature CSP light sources.
  • the dual circuit structure or the single circuit structure is respectively soldered by reflow soldering and uniformly distributed on the COB substrate, and connected to corresponding electrodes through lines on the COB substrate;
  • a surrounding dam formed by a white dam glue is disposed in a surrounding area of the double circuit structure or the single circuit structure, and the blank area in the dam is filled with the high color temperature phosphor silica gel to form the white light.
  • LED COB structure LED COB structure.
  • a resistor or a triode is connected in series on the bus of the flip-chip blue LED chip connected in parallel, or a plurality of series-connected low-color temperature CSP light sources are connected in series with a resistor or A triode or two buses are connected in series with a resistor or a triode.
  • the flip-chip blue LED chip and the low color temperature CSP light source are evenly distributed on the COB substrate or arranged according to requirements.
  • the color temperature range of the low color temperature CSP light source ranges from 1500K to 7500K
  • the color temperature range of the COB substrate ranges from 1200K to 7000K.
  • the low color temperature CSP light source has a structure in which a surface of the flip-chip blue LED chip is covered with a silica gel film mixed with phosphor, and the periphery and the bottom thereof are leaked.
  • the phosphor film-mixed silica film coated on the surface of the low color temperature CSP light source has a thickness ranging from 0.05 mm to 0.3 mm.
  • the flip-chip blue LED chip is a flip-chip GaN blue LED chip having a dominant wavelength of 450-460 nm.
  • the invention also provides a preparation method for preparing the white LED COB structure, comprising the following steps:
  • Step 1) respectively connecting a plurality of the inverted blue LED chips and the plurality of low color temperature CSP light sources in parallel, and then respectively connected to one positive electrode and one negative electrode to form the dual circuit structure; or the plurality of strings connected in parallel
  • the blue LED chip is connected in parallel with the plurality of serially connected low color temperature CSP light sources, and then connected together to a positive electrode and a negative electrode to form the single circuit structure;
  • Step 2 soldering the dual circuit structure or single circuit structure on the COB substrate by reflow soldering
  • Step 3) connecting the positive electrode and the negative electrode to a line on the COB substrate in series or in parallel, and then respectively connected to corresponding electrodes;
  • Step 5 To achieve color adjustment of the light source on the COB substrate by performing current adjustment on the flip-chip blue LED chip and the low color temperature CSP light source.
  • the method when the single circuit structure is formed, the method further includes:
  • a resistor or a triode is connected in series on the bus of the flip-chip blue LED chip connected in parallel, or the resistor or the triode is connected in series on the bus of the low color temperature CSP light source connected in parallel; or serially connected in series on the two buses Said resistor or triode.
  • step 5 performing current adjustment on the flip-chip blue LED chip and the low color temperature CSP light source specifically includes:
  • Adjusting the dual circuit structure specifically includes: when the current of the flip-chip blue LED chip increases, when the current of the low color temperature CSP light source decreases, the COB substrate gradually changes from a cool color temperature to a warm color temperature; when the low color temperature CSP light source is turned off, The COB substrate reaches a maximum color temperature. Conversely, the COB substrate gradually changes from a cool color temperature to a warm color temperature; when the flip-chip blue LED chip is turned off, the COB substrate reaches a minimum color temperature.
  • Adjusting the single circuit structure specifically includes: when the current in the circuit is adjusted to be small, the voltage on the resistor or the triode is small, and the proportion of the current distributed on the warm color temperature line where the flip-chip blue LED chip is located is large, and the warm color temperature is emitted. Light; when the current regulation in the circuit is increased, the voltage on the resistor or the triode increases, and the proportion of the current distributed on the cold color temperature line where the low color temperature CSP source is located is large, and more cold color temperature light is emitted.
  • the invention provides a structure and a preparation method of a white LED COB packaged by using a CSP chip and a flip-chip blue LED chip package, wherein the low color temperature CSP light source adopts better heat dissipation performance, high lumen density, and in the case of the same luminous flux, the light source Smaller, or the same device volume can provide more optical power. At the same time, the wire-making process is also eliminated, and the reliability of the product is improved. High packing density. SMT surface mount, simplifying the substrate. Effectively reduce the package size, small, thin and light, to meet the current trend of miniaturization of LED lighting applications, design applications are more flexible, breaking the limitations of traditional light source size design.
  • the structure of the COB provided by the present invention has a small near-field color temperature change and a uniform color space distribution, and even if a pure CSP light source is used, the color space of the structure of the COB provided by the present invention is evenly distributed, the brightness is also uniform, and the CSP light source is spaced apart. It is not easy to enter dust. Moreover, the preparation process and structure are simple, and the customized color COB plate can be easily and efficiently produced.
  • FIG. 1a is a schematic structural view of a commonly used CSP light source
  • FIG. 1b is another schematic structural diagram of a commonly used CSP light source
  • Figure 1c is a third structural schematic diagram of a commonly used CSP light source
  • FIG. 2 is a schematic diagram of a new CSP structure provided by the present invention.
  • 3 is a schematic structural view of a flip-chip sapphire substrate GaN LED chip
  • FIG. 4 is a schematic structural view of a GaN blue LED chip of a horizontal structure sapphire substrate
  • Figure 5a is a top view of a conventional LED COB
  • Figure 5b is a top view of the chromatic COB achieved by different color temperatures in the existing sub-areas
  • Figure 5c is a top view of the color temperature adjustable COB of the existing COB surface point warm color temperature fluorescent powder silica gel belt;
  • Figure 5d is a schematic diagram of COB composed of different color temperature CSPs at present
  • Figure 6 is a top view of a COB of the dimmable color adjustment using CSP provided by the present invention.
  • Figure 6a is a warm color temperature CSP array circuit within the COB provided in Figure 6;
  • Figure 6b is a flip-chip blue chip array circuit in the COB provided in Figure 6;
  • Figure 7 is a top view of another COB of the dimmable color adjustment using CSP provided by the present invention.
  • 7a is a circuit formed by the flip-chip blue LED chip array and the low color temperature CSP array provided in FIG. 7;
  • FIG. 8 is a physical top view of an LED COB using a dual circuit scheme according to the present invention.
  • FIG. 9 is a physical top view of an LED COB using a single circuit scheme according to the present invention.
  • Embodiment 1 Dual circuit scheme:
  • the structure of the white LED COB packaged by the CSP chip and the flip-chip blue LED chip comprises a square COB substrate, and the middle portion of the COB substrate is soldered with a flip-chip blue LED chip array and a low color temperature CSP light source by reflow soldering.
  • Array two arrays are arranged in order according to needs.
  • a positive electrode 1 and a negative electrode 1 for controlling a low color temperature CSP circuit are respectively disposed at four corners of the COB substrate, and the positive electrode 2 and the negative electrode 2 of the flip-chip blue LED chip circuit are controlled, and a circuit layer and a resistor are provided in a peripheral region of the array. Solder layer.
  • the low color temperature CSP circuit and the flip-chip blue LED chip circuit are respectively connected to the corresponding electrodes after being serially connected through the circuits on the COB substrate.
  • a white dam glue is used to flip the blue LED chip and the low color temperature CSP light source area dam, and then the high color temperature phosphor silica gel is filled in the dam area.
  • the low color temperature CSP light source chip array is connected in series and shares one positive and negative electrode.
  • the flip-chip blue LED chips are connected in series and share one positive and negative electrode.
  • the low color temperature CSP circuit and the flip-chip blue LED chip circuit can each be independently regulated by an independent circuit.
  • the prepared COB board realizes the color grading of the COB light source by adjusting the current of the flip-chip blue LED chip and the low color temperature CSP light source, respectively.
  • the current of the flip-chip blue LED chip increases, and the low color temperature CSP source current decreases, the color on the COB panel gradually changes from the cool color temperature to the warm color temperature.
  • the color temperature CSP light source is turned off, the color on the COB board reaches the highest color temperature.
  • the color on the COB board gradually changes from the warm color temperature to the cool color temperature.
  • the flip-chip blue LED chip is turned off, the color on the COB board reaches the minimum color temperature.
  • the physical map of the scheme is shown in Fig. 8.
  • the inner diameter of the dam is 9 ⁇ 0.2mm, the outer diameter is 10 ⁇ 0.2mm, and the height is 0.5 ⁇ 0.1mm.
  • Embodiment 2 Single circuit scheme:
  • the structure of the white LED COB packaged by the CSP chip and the flip-chip blue LED chip comprises a square COB substrate, and the middle portion of the COB substrate is soldered with a flip-chip blue LED chip array and a low color temperature CSP light source array by reflow soldering.
  • the two arrays are arranged in an orderly manner as needed.
  • a positive electrode and a negative electrode for simultaneously controlling the low color temperature CSP circuit and the flip chip blue LED chip circuit are provided at two corners of the diagonal of the COB substrate, and a circuit layer and a solder resist layer are provided in a peripheral region of the array.
  • the low color temperature CSP circuit and the flip-chip blue LED chip circuit are respectively connected to the corresponding electrodes after being serially connected through the circuits on the COB substrate.
  • a white dam glue is used to flip the blue LED chip and the low color temperature CSP light source area dam, and then the high color temperature phosphor silica gel is filled in the dam area.
  • a plurality of parallel-connected flip-chip blue LED chip arrays are connected in parallel with a plurality of parallel low-temperature CSP light source arrays to be connected to the same positive electrode and the same negative electrode.
  • the color temperature of different power devices can be adjusted by performing current regulation by series resistors or transistors on the bus of a plurality of series of low color temperature CSP light source arrays.
  • the principle is that through the action of the resistor and the triode, the cooling and heating parallel circuit can realize different distribution of the current of the warm color temperature circuit and the cold color temperature circuit with the input current under the same voltage, thereby realizing the adjustable color temperature.
  • the current in the circuit is adjusted to be small, the voltage on the resistor or the triode is small, and the proportion of the current distributed on the warm color temperature line where the flip-chip blue LED chip is located is large, and the light of warm color temperature is emitted; when the current regulation in the circuit is increased The voltage on the resistor or the triode increases, and the proportion of the current distributed on the cool color temperature line where the low color temperature CSP source is located is large, and more cool color temperature light is emitted.
  • the physical map of the scheme is shown in Fig. 9.
  • the welding positioning hole is provided in the lower right corner of the COB board.
  • the structure of white LED COB packaged by CSP chip and flip-chip blue LED chip includes: flip-chip blue LED chip, low color temperature CSP light source, high color temperature phosphor powder silica gel;
  • a plurality of the inverted blue LED chips are connected in parallel, and the plurality of low color temperature CSP light sources are connected in parallel; the inverted blue LED chips connected in parallel are connected to a positive electrode and a negative electrode to form a plurality of inverted blue LED chip circuits.
  • the plurality of strings of the low color temperature CSP light sources are connected in common to one positive electrode and one negative electrode to form a plurality of strings of low color temperature CSP light source circuits; the plurality of strings of inverted blue LED chip circuits and the plurality of strings of low color temperature CSP light source circuits are formed Dual circuit structure;
  • the plurality of series-connected flip-chip blue LED chips and the plurality of parallel connected low color temperature CSP light sources are connected in parallel to be connected to one positive electrode and one negative electrode to form a plurality of strings of inverted blue LED chips and a plurality of strings of low color temperature CSP light sources.
  • the dual circuit structure or the single circuit structure is respectively soldered by reflow soldering and uniformly distributed on the COB substrate, and connected to corresponding electrodes through lines on the COB substrate;
  • a surrounding dam formed by a white dam glue is disposed in a surrounding area of the double circuit structure or the single circuit structure, and the blank area in the dam is filled with the high color temperature phosphor silica gel to form the white light.
  • LED COB structure LED COB structure.
  • the preparation method of the white LED COB structure comprises the following steps:
  • Step 1) respectively connecting a plurality of the inverted blue LED chips and the plurality of low color temperature CSP light sources in parallel, and then respectively connected to one positive electrode and one negative electrode to form the dual circuit structure; or the plurality of strings connected in parallel
  • the blue LED chip is connected in parallel with the plurality of serially connected low color temperature CSP light sources, and then connected together to a positive electrode and a negative electrode to form the single circuit structure;
  • Step 2 soldering the dual circuit structure or single circuit structure on the COB substrate by reflow soldering
  • Step 3) connecting the positive electrode and the negative electrode to a line on the COB substrate in series or in parallel, and then respectively connected to corresponding electrodes;
  • Step 5 To achieve color adjustment of the light source on the COB substrate by performing current adjustment on the flip-chip blue LED chip and the low color temperature CSP light source.
  • the invention provides a structure and a preparation method of a white LED COB packaged by using a CSP chip and a flip-chip blue LED chip package, wherein the low color temperature CSP light source adopts better heat dissipation performance, high lumen density, and in the case of the same luminous flux, the light source Smaller, or the same device volume can provide more optical power. At the same time, the wire-making process is also eliminated, and the reliability of the product is improved. High packing density. SMT surface mount, simplifying the substrate. Effectively reduce the package size, small, thin and light, to meet the current trend of miniaturization of LED lighting applications, design applications are more flexible, breaking the limitations of traditional light source size design.
  • the structure of the COB provided by the present invention has a small near-field color temperature change and a uniform color space distribution, and even if a pure CSP light source is used, the color space of the structure of the COB provided by the present invention is evenly distributed, the brightness is also uniform, and the CSP light source is spaced apart. It is not easy to enter dust. Moreover, the preparation process and structure are simple, and the customized color COB plate can be easily and efficiently produced.

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  • Led Device Packages (AREA)

Abstract

一种采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构及制备方法，能够解决调色COB工艺难度大复杂等问题实现定制化可调色COB简单高效的生产。包括倒装蓝光LED芯片、低色温CSP光源、高色温荧光粉硅胶；多串并联的倒装蓝光LED芯片和多串并联的低色温CSP光源分别共同连接至一个正极和一个负极，形成双电路结构；或者多串并联的倒装蓝光LED芯片和多串并联的低色温CSP光源并联后共同连接至一个正极和一个负极，形成单电路结构；两种电路结构分别焊接并均匀分布在COB基板上，并经过COB基板上的线路分别与对应的电极相连；在两种电路结构的周围区域设有由白色围坝胶构成的围坝，围坝内的空白区域内填充有高色温荧光粉硅胶，形成白光LED COB结构。

Description

采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构及制备方法 技术领域
本发明属于照明领域，具体涉及一种采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构及制备方法。
背景技术
在LED应用中，所谓CSP光源是指一类LED器件，其核心部分为蓝宝石衬底的倒装蓝光芯片，除带有正负电极的焊脚一面外，其部分表面被荧光粉胶膜覆盖。其中，正负焊脚通过焊锡连接到应用的线路基板上。由于CSP光源只是采用荧光粉硅胶膜包覆住倒装芯片的结构，因此免除了传统LED光源的大部分封装步骤和结构，使得封装体尺寸小，达到封装体体积不大于倒装芯片体积的20％。当CSP光源被通电后，蓝光和硅胶中荧光粉被蓝光激发所发出的其他颜色的光组合作用，形成不同色温和显指的白光。
目前CSP光源主要有三种结构类型:如图1a-图1c所示，结构1、芯片四周及上表面完全被混有荧光粉的硅胶所包覆，仅有芯片底部电极露出，贴片时直接通过焊锡贴装于PCB板上。结构2、芯片四周围白墙，白墙高度与芯片高度一致，在芯片及白墙上表面覆盖一层混有荧光粉的硅胶，仅有芯片底部电极露出。贴装时直接通过焊锡贴装于PCB板上。结构3、一层薄薄的荧光粉膜包裹住整个芯片，在整个荧光粉膜表面再覆盖一层厚的透明硅胶，整个芯片仅底部电极漏出，贴片时直接通过焊锡贴装于PCB板上。
目前常用的倒装蓝宝石衬底的GaN蓝光LED如图3所示，采用的技术是将其芯片进行倒置，P型电极采用覆盖整个Mesa的高反射膜或金属，从而光从蓝宝石衬底出射。相比于如图4所示的传统的采用水平结构蓝宝石衬底的GaN蓝光LED芯片，其上表面无电极金属遮挡，出光效率提高；电流分布均匀导致电压降低，光效提高；L-I有更好的线性关系，对比同等水平结构芯片，当应用功率增加时，光效下降速度缓慢，从而使得高功率应用中芯片的性价比高；抗静电能力高，可靠性增加；蓝宝石衬底的折射率1.7比GaN的2.4小，蓝宝石和硅胶及荧光粉的组合，以及GaN和硅胶及荧光粉的组合的全反射临界角分别为51.1-70.8度和6.7-45.1度，在封装结构中由蓝宝 石表面射出的光经由硅胶和荧光粉界面层的全反射临界角更大，光线全反射损失大大降低。从而出光效率提高；荧光粉直接接触的蓝宝石上表面温度低，荧光粉效率提高，出光效率高，可靠性增加；芯片结点靠近封装基板，结温低，热阻下降，出光效率提高，芯片可靠性增加。
LED COB是指将阵列LED芯片装配在PCB或者陶瓷等基板上，用围坝胶围成一个圆形和其他形状的发光面或称LES，并在芯片上方覆盖混有荧光粉的硅胶。点亮阵列LED芯片使整个LES发出白光的面光源。
已有可调色LED集成封装形式，包括COB在内的技术特点如下：
方式一：如图5a所示，蓝光芯片直接封装在基板上，芯片外围有圆形或者其它形状的围坝，围坝内芯片表面覆盖混有荧光粉的硅胶。
缺点：无法实现色温可调节
方式二：如图5b所示，采用同种蓝光芯片，不同色温荧光胶，用围坝胶或者碗杯等方式，区域分布不同色温荧光粉硅胶，实现色温的可调。
缺点：1)混色效果不佳，特别是距离靠近LED的近场CCT分布不均匀。2)光的明暗分布不均匀，特别是在近场明显。3)由于隔离围坝占据面积，芯片密度无法提高，小尺寸发光面的可调色温。
方式三：如图5c所示，先围坝然后在围坝内点上冷色温的荧光粉硅胶，之后在部分芯片上方点上一条暖色温的荧光粉硅胶带，通过调节不同暖色温下方芯片电流实现色温可调。
缺点：1)工艺控制较难，CIE集中度不高。2)混色效果不佳，特别是距离靠近LED的近场CCT分布不均匀。
方式四：如图5d所示，CSP COB形式，将不同色温，通常暖色和冷色两种的CSP通过SMT方式直接贴于COB基板上形成发光面(LES)，不同色温CSP成均匀或对称分布。
缺点：1)由于冷色，暖色CSP的荧光粉胶不是一体的，无法直接进行胶体内的光传输。所以导致当某一色温点亮而另一种色温没有点亮的时候，LES的明暗不均匀，在色温点的芯片明暗不一致，反映出COB的混色，亮度不均匀，2)CSP易遭触碰而损坏，3)CSP之间易进入灰尘，出现光衰和发黑。
所以，目前的COB板结构存在以下问题：现有条状调色COB的近场色温变化大，色空间分布不均匀。现有纯CSP光源可调色COB的色空间分布不均匀，亮度不均匀，CSP光源间隔内易进灰等。
发明内容
本发明的目的在于提供一种采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构及制备方法，能够解决调色COB工艺难度大、复杂等问题，实现定制化可调色COB简单高效的生产。
为了达到上述目的，本发明的具体技术方案如下：
采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构，包括：倒装蓝光LED芯片、低色温CSP光源、高色温荧光粉硅胶；
多串所述倒装蓝光LED芯片并联，多串所述低色温CSP光源并联；多串并联的所述倒装蓝光LED芯片共同连接至一个正极和一个负极，形成多串倒装蓝光LED芯片电路；多串并联的所述低色温CSP光源共同连接至一个正极和一个负极，形成多串低色温CSP光源电路；所述多串倒装蓝光LED芯片电路和所述多串低色温CSP光源电路形成双电路结构；
或者多串并联的所述倒装蓝光LED芯片和多串并联的所述低色温CSP光源并联后共同连接至一个正极和一个负极，形成由多串倒装蓝光LED芯片和多串低色温CSP光源构成的单电路结构；
所述双电路结构或所述单电路结构分别通过回流焊焊接并均匀分布在COB基板上，并经过所述COB基板上的线路分别与对应的电极相连；
在所述双电路结构或所述单电路结构的周围区域设有由白色围坝胶构成的围坝，所述围坝内的空白区域内填充有所述高色温荧光粉硅胶，形成所述白光LED COB结构。
进一步地，当形成所述单电路结构时，多串并联的所述倒装蓝光LED芯片的总线上串联有电阻或者三极管，或者多串并联的所述低色温CSP光源的总线上串联有电阻或者三极管，或者二条总线上同时串联有电阻或者三极管。
进一步地，所述倒装蓝光LED芯片及低色温CSP光源在所述COB基板上均匀分布或者根据需求排布。
进一步地，所述低色温CSP光源的色温范围为1500K-7500K，所述COB基板的可调色色温范围为1200K-7000K。
进一步地，所述低色温CSP光源的结构是在所述倒装蓝光LED芯片表面覆盖一层混有荧光粉的硅胶膜，其四周及底部漏出。
进一步地，所述低色温CSP光源表面涂覆的混有荧光粉的硅胶膜的厚度范围为0.05mm-0.3mm。
进一步地，所述倒装蓝光LED芯片为倒装GaN蓝光LED芯片，其主波长为450-460nm。
本发明还提供了制备所述白光LED COB结构的制备方法，包括以下步骤：
步骤1)将多串所述倒装蓝光LED芯片和多串述低色温CSP光源分别并联，之后分别连接至一个正极和一个负极，形成所述双电路结构；或者将多串并联的所述倒装蓝光LED芯片和多串并联的所述低色温CSP光源并联后，再共同连接至一个正极和一个负极，形成所述单电路结构；
步骤2)将所述双电路结构或者单电路结构通过回流焊焊接在所述COB基板上；
步骤3)将所述正极和负极与所述COB基板上的线路串联或者并联，之后分别与对应的电极相连；
步骤4)采用白色围坝胶将所述双电路结构区域或单电路结构区域围坝，之后在所述围坝区域内填充高色温荧光粉硅胶；
步骤5)通过对所述倒装蓝光LED芯片和低色温CSP光源进行电流调节，实现所述COB基板上的光源调色。
进一步地，步骤1)中，形成所述单电路结构时，还包括：
在多串并联的所述倒装蓝光LED芯片的总线上串联电阻或者三极管，或者在多串并联的所述低色温CSP光源的总线上串联所述电阻或者三极管，或者在二条总线上同时串联所述电阻或者三极管。
进一步地，步骤5)中，对所述倒装蓝光LED芯片和低色温CSP光源进行电流调节具体包括：
对所述双电路结构进行调节具体包括：当倒装蓝光LED芯片电流增大时，低色温CSP光源的电流减小时，COB基板由冷色温逐渐变成暖色温；当低色温CSP光源关闭时，所述COB基板达到最高色温，反之，所述COB基板由冷色温逐渐变成暖色温；当所述倒装蓝光LED芯片关闭时，所述COB基板达到最低色温。
对所述单电路结构进行调节具体包括：将电路中电流调节至较小时，电阻或三极管上电压较小，倒装蓝光LED芯片所在的暖色温线路上分配到的电流比例大，发出暖色温的光；当将电路中电流调节增大时，电阻或三极管上电压增大，低色温CSP光源所在的冷色温线路上分配到的电流比例大，发出更多冷色温的光。
本发明提供的采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构及制备方法，其中采用的低色温CSP光源其散热表现更佳，高的流明密度，在同样光通量的情况下，光源体积更小，或同样器件体积下可以提供更大光功率。同时还免除打线制程，产品可靠度提升。封装密度高。SMT表面贴装，简化基板。有效缩减封装体积，小、薄而轻，迎合了目前LED照明应用微小型化的趋势，设计应用更加灵活，打破了传统光源尺寸给设计带来的限制。
通过本发明提供的COB的结构，其近场色温变化小，色空间分布均匀，即使是采用纯CSP光源本发明提供的COB的结构的色空间依然分布均匀，亮度同样均匀，而且CSP光源间隔内不易进入灰尘。而且制备工艺及结构均简单，可实现定制化可调色COB板简单高效的生产。
附图说明
图1a为目前常用的CSP光源的一种结构示意图；
图1b为目前常用的CSP光源的另一种结构示意图；
图1c为目前常用的CSP光源的第三种结构示意图；
图2为本发明提供的一款新的CSP结构示意图；
图3为倒装蓝宝石衬底GaN LED芯片的结构示意图；
图4为水平结构蓝宝石衬底的GaN蓝光LED芯片结构示意图；
图5a为传统LED COB的顶视图；
图5b为现有的分区域不同色温实现可调色COB的顶视图；
图5c为现有的COB表面点暖色温荧光粉硅胶带实现色温可调COB顶视图；
图5d为目前不同色温CSP构成的COB示意图；
图6为本发明提供的采用CSP的可调光调色的一种COB顶视图；
图6a为图6中提供的COB内的暖色温CSP阵列电路；
图6b为图6中提供的COB内的倒装蓝光芯片阵列电路；
图7为本发明提供的采用CSP的可调光调色的另一种COB顶视图；
图7a为图7中提供的倒装蓝光LED芯片阵列和低色温CSP阵列共同构成的电路；
图8为本发明提供的采用双电路方案的LED COB的实物俯视图；
图9为本发明提供的采用单电路方案的LED COB的实物俯视图。
本发明的较佳实施方式
实施例1.双电路方案：
如图6所示，采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构，包括方形的COB基板，该COB基板的中部通过回流焊焊接有倒装蓝光LED芯片阵列和低色温CSP光源阵列，两个阵列根据需要有序排布。在COB基板的四个角上分别对应设有控制低色温CSP电路的正极1和负极1，控制倒装蓝光LED芯片电路的正极2和负极2，同时在阵列的外围区域设有电路层和阻焊层。低色温CSP电路和倒装蓝光LED芯片电路分别经过COB基板上电路的串并连接之后分别与对应的电极相连。在两个阵列的周围设有由白色围坝胶将倒装蓝光LED芯片及低色温CSP光源区域围坝，之后在围坝区域内填充高色温荧光粉硅胶。
如图6a所示，低色温CSP光源芯片阵列多串并接，共享一个正极和负极。如图6b所示，倒装蓝光LED芯片多串并接，共享一个正极和负极。
也就是说，低色温CSP电路和倒装蓝光LED芯片电路均分别能够通过独立的电路进行自主调控。
制备完成的COB板通过分别对倒装蓝光LED芯片和低色温CSP光源的电流调节，实现COB光源的调色。当倒装蓝光LED芯片的电流增大，低色温CSP光源电流减小时，COB板上的颜色由冷色温逐渐变成暖色温。当低 色温CSP光源关闭时，COB板上的颜色达到最高色温，反之，COB板上的颜色由暖色温逐渐变成冷色温。当倒装蓝光LED芯片关闭时，COB板上的颜色达到最低色温。
该方案的实物图如图8所示，围坝的内径为9±0.2mm，外径为10±0.2mm，高度为0.5±0.1mm。
实施例2.单电路方案：
如图7所示，采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构，包括方形COB基板，该COB基板的中部通过回流焊焊接有倒装蓝光LED芯片阵列和低色温CSP光源阵列，两个阵列根据需要有序排布。在COB基板的对角线的两个角上对应设有同时控制低色温CSP电路和倒装蓝光LED芯片电路的正极和负极，同时在阵列的外围区域设有电路层和阻焊层。低色温CSP电路和倒装蓝光LED芯片电路分别经过COB基板上电路的串并连接之后与对应的电极相连。在两个阵列的周围设有由白色围坝胶将倒装蓝光LED芯片及低色温CSP光源区域围坝，之后在围坝区域内填充高色温荧光粉硅胶。
如图7a所示，多串并联的倒装蓝光LED芯片阵列与多串并联的低色温CSP光源阵列并联后共同连接至同一正极和同一负极。通过在多串并联的低色温CSP光源阵列的总线上串联电阻或者三极管进行电流调节，从而实现不同的功率器件的色温可调节。
其原理是通过电阻和三极管的作用，使得冷暖并联电路在保证相同电压下，暖色温电路和冷色温电路的电流随输入电流变化而出现不同分配，从而实现色温可调。将电路中电流调节至较小时，电阻或三极管上电压较小，倒装蓝光LED芯片所在的暖色温线路上分配到的电流比例大，发出暖色温的光；当将电路中电流调节增大时，电阻或三极管上电压增大，低色温CSP光源所在的冷色温线路上分配到的电流比例大，发出更多冷色温的光。该方案的实物图如图9所示，COB板的右下角设有焊接定位孔。
也可以通过在多串并联的倒装蓝光LED芯片阵列的总线上串联电阻或者三极管，或者二条总线上同时串联电阻或者三极管进行调节。
工业实用性
采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构，包括：倒装蓝光LED芯片、低色温CSP光源、高色温荧光粉硅胶；
多串所述倒装蓝光LED芯片并联，多串所述低色温CSP光源并联；多串并联的所述倒装蓝光LED芯片共同连接至一个正极和一个负极，形成多串倒装蓝光LED芯片电路；多串并联的所述低色温CSP光源共同连接至一个正极和一个负极，形成多串低色温CSP光源电路；所述多串倒装蓝光LED芯片电路和所述多串低色温CSP光源电路形成双电路结构；
或者多串并联的所述倒装蓝光LED芯片和多串并联的所述低色温CSP光源并联后共同连接至一个正极和一个负极，形成由多串倒装蓝光LED芯片和多串低色温CSP光源构成的单电路结构；
所述双电路结构或所述单电路结构分别通过回流焊焊接并均匀分布在COB基板上，并经过所述COB基板上的线路分别与对应的电极相连；
在所述双电路结构或所述单电路结构的周围区域设有由白色围坝胶构成的围坝，所述围坝内的空白区域内填充有所述高色温荧光粉硅胶，形成所述白光LED COB结构。
制备所述白光LED COB结构的制备方法，包括以下步骤：
步骤1)将多串所述倒装蓝光LED芯片和多串述低色温CSP光源分别并联，之后分别连接至一个正极和一个负极，形成所述双电路结构；或者将多串并联的所述倒装蓝光LED芯片和多串并联的所述低色温CSP光源并联后，再共同连接至一个正极和一个负极，形成所述单电路结构；
步骤2)将所述双电路结构或者单电路结构通过回流焊焊接在所述COB基板上；
步骤3)将所述正极和负极与所述COB基板上的线路串联或者并联，之后分别与对应的电极相连；
步骤4)采用白色围坝胶将所述双电路结构区域或单电路结构区域围坝，之后在所述围坝区域内填充高色温荧光粉硅胶；
步骤5)通过对所述倒装蓝光LED芯片和低色温CSP光源进行电流调节，实现所述COB基板上的光源调色。
本发明提供的采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构及制备方法，其中采用的低色温CSP光源其散热表现更佳，高的流明密度，在同样光通量的情况下，光源体积更小，或同样器件体积下可以提供更大光功率。同时还免除打线制程，产品可靠度提升。封装密度高。SMT表面贴装，简化基板。有效缩减封装体积，小、薄而轻，迎合了目前LED照明应用微小型化的趋势，设计应用更加灵活，打破了传统光源尺寸给设计带来的限制。
通过本发明提供的COB的结构，其近场色温变化小，色空间分布均匀，即使是采用纯CSP光源本发明提供的COB的结构的色空间依然分布均匀，亮度同样均匀，而且CSP光源间隔内不易进入灰尘。而且制备工艺及结构均简单，可实现定制化可调色COB板简单高效的生产。

Claims (10)

  1. 采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构，其特征在于，包括：倒装蓝光LED芯片、低色温CSP光源、高色温荧光粉硅胶；
    多串所述倒装蓝光LED芯片并联，多串所述低色温CSP光源并联；多串并联的所述倒装蓝光LED芯片共同连接至一个正极和一个负极，形成多串倒装蓝光LED芯片电路；多串并联的所述低色温CSP光源共同连接至一个正极和一个负极，形成多串低色温CSP光源电路；所述多串倒装蓝光LED芯片电路和所述多串低色温CSP光源电路形成双电路结构；
    或者多串并联的所述倒装蓝光LED芯片和多串并联的所述低色温CSP光源并联后共同连接至一个正极和一个负极，形成由多串倒装蓝光LED芯片和多串低色温CSP光源构成的单电路结构；
    所述双电路结构或所述单电路结构分别通过回流焊焊接并均匀分布在COB基板上，并经过所述COB基板上的线路分别与对应的电极相连；
    在所述双电路结构或所述单电路结构的周围区域设有由白色围坝胶构成的围坝，所述围坝内的空白区域内填充有所述高色温荧光粉硅胶，形成所述白光LED COB结构。
  2. 根据权利要求1所述的采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构，其特征在于，
    当形成所述单电路结构时，多串并联的所述倒装蓝光LED芯片的总线上串联有电阻或者三极管，或者多串并联的所述低色温CSP光源的总线上串联有电阻或者三极管，或者二条总线上同时串联有电阻或者三极管。
  3. 根据权利要求1所述的采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构，其特征在于，
    所述倒装蓝光LED芯片及低色温CSP光源在所述COB基板上均匀分布或者根据需求排布。
  4. 根据权利要求1所述的采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构，其特征在于，所述低色温CSP光源的色温范围为1500K-7500K，所述COB基板的可调色色温范围为1200K-7000K。
  5. 根据权利要求1所述的采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构，其特征在于，所述低色温CSP光源的结构是在所述倒装蓝光LED芯片表面覆盖一层混有荧光粉的硅胶膜，其四周及底部漏出。
  6. 根据权利要求1所述的采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构，其特征在于，所述低色温CSP光源表面涂覆的混有荧光粉的硅胶膜的厚度范围为0.05mm-0.3mm。
  7. 根据权利要求1所述的采用CSP芯片和倒装蓝光LED芯片封装的白光LED COB的结构，其特征在于，所述倒装蓝光LED芯片为倒装GaN蓝光LED芯片，其主波长为450-460nm。
  8. 如权利要求1-7任一项所述的白光LED COB结构的制备方法，其特征在于，包括以下步骤：
    步骤1)将多串所述倒装蓝光LED芯片和多串述低色温CSP光源分别并联，之后分别连接至一个正极和一个负极，形成所述双电路结构；或者将多串并联的所述倒装蓝光LED芯片和多串并联的所述低色温CSP光源并联后，再共同连接至一个正极和一个负极，形成所述单电路结构；
    步骤2)将所述双电路结构或者单电路结构通过回流焊焊接在所述COB基板上；
    步骤3)将所述正极和负极与所述COB基板上的线路串联或者并联，之后分别与对应的电极相连；
    步骤4)采用白色围坝胶将所述双电路结构区域或单电路结构区域围坝，之后在所述围坝区域内填充高色温荧光粉硅胶；
    步骤5)通过对所述倒装蓝光LED芯片和低色温CSP光源进行电流调节，实现所述COB基板上的光源调色。
  9. 根据权利要6所述的制备方法，其特征在于，步骤1)中，形成所述单电路结构时，还包括：
    在多串并联的所述倒装蓝光LED芯片的总线上串联电阻或者三极管，或者在多串并联的所述低色温CSP光源的总线上串联所述电阻或者三极管，或者在二条总线上同时串联所述电阻或者三极管。
  10. 根据权利要求7所述的制备方法，其特征在于，步骤5)中，对所述倒装蓝光LED芯片和低色温CSP光源进行电流调节具体包括：
    对所述双电路结构进行调节具体包括：当倒装蓝光LED芯片电流增大时，低色温CSP光源的电流减小时，COB基板由冷色温逐渐变成暖色温；当低色温CSP光源关闭时，所述COB基板达到最高色温，反之，所述COB基板由冷色温逐渐变成暖色温；当所述倒装蓝光LED芯片关闭时，所述COB基板达到最低色温。
    对所述单电路结构进行调节具体包括：将电路中电流调节至较小时，电阻或三极管上电压较小，倒装蓝光LED芯片所在的暖色温线路上分配到的电流比例大，发出暖色温的光；当将电路中电流调节增大时，电阻或三极管上电压增大，低色温CSP光源所在的冷色温线路上分配到的电流比例大，发出更多冷色温的光。
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