WO2018196048A1 - 一种阵列基板及显示装置 - Google Patents

一种阵列基板及显示装置 Download PDF

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WO2018196048A1
WO2018196048A1 PCT/CN2017/084536 CN2017084536W WO2018196048A1 WO 2018196048 A1 WO2018196048 A1 WO 2018196048A1 CN 2017084536 W CN2017084536 W CN 2017084536W WO 2018196048 A1 WO2018196048 A1 WO 2018196048A1
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Prior art keywords
gate line
array substrate
output
drain
source
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English (en)
French (fr)
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赵凯祥
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate and a display device.
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • the gate line is a metal line, and there is a certain resistance of the metal line.
  • the expression of the gate line drop in the existing liquid crystal display panel is:
  • ⁇ Vp represents the voltage drop value
  • C gs represents the capacitance between the gate line and the source/drain of the switching element
  • C lc represents the liquid crystal capacitance
  • C s represents the storage capacitance
  • V ghl represents the ideal input voltage and the actual input voltage.
  • the direction from the near end of the gate line to the far end of the output ie, from the near and far direction of the scanning signal driving circuit
  • the actual input voltage of the gate line gradually decreases, and the ideal input voltage does not change, so V ghl gradually increases. That is, the voltage drop value gradually increases in the direction from the proximal end of the gate line output to the far end of the output.
  • the change of ⁇ Vp on the liquid crystal panel will cause the picture near the input end of the gate line to be brighter, and the picture away from the input end of the gate line is darker, which affects the uniformity of the panel display.
  • the present invention provides an array substrate and a display device, and the array substrate and the display of the present invention are compared with the prior art.
  • the display uniformity of the device is good.
  • the present invention provides an array substrate comprising a glass substrate disposed on a bottom layer, wherein a gate line is disposed on the glass substrate, and a plurality of pairs of source/drain electrodes are further disposed on the array substrate, the source/ Between the drain and the gate line, at least one insulating layer is disposed, wherein a direction of the source/drain and the gate line gradually increases along a direction from an output proximal end of the gate line to an output distal end Reduced.
  • the facing area of the source/drain and the gate line is gradually reduced, so that ⁇ Vp is relatively uniform over the entire panel, and the display uniformity of the panel is ensured.
  • an active layer is further included, the active layer includes a conductive channel, and the source and the drain are connected through the conductive channel, viewed from a direction of the vertical array substrate
  • the facing area of the source/drain and the gate line is a facing area between the conductive channel and the gate line.
  • the active layer, the first insulating layer, the gate line, the second insulating layer and the second conductive layer are sequentially disposed on the glass substrate, and the second conductive layer includes the source/drain .
  • a via hole is disposed on the first insulating layer and the second insulating layer, and the source/drain is connected to the conductive channel through different via holes.
  • the active layer further includes a source region and a drain region on both sides of the conductive channel, the source region is connected to the source, and the drain region is connected to the drain .
  • the gate line width is gradually decreased along the direction from the output proximal end of the gate line to the output distal end.
  • the width of the gate line is stepwise reduced.
  • the gate lines are symmetrical about a center line along the transmission direction, and the gate lines are stepped structures on both sides of the center line.
  • the width of the gate line By changing the width of the gate line, the facing area of the source and drain and the gate line is gradually reduced, and the method is simple and practical.
  • the width of the conductive channel gradually decreases along the transport direction.
  • a display device comprising the array substrate described above.
  • the invention improves the uniformity of the display of the panel by changing the facing area of the source/drain and the gate line such that the voltage drop across the gate line is equal.
  • 1 is a schematic diagram of wiring of an array substrate in the prior art
  • FIG. 2 is a schematic structural view of an array substrate in an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of wiring of an array substrate in an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of wiring of an array substrate in an embodiment of the present invention.
  • the facing area of the gate line and the source/drain is gradually reduced, so that the voltage drop ⁇ Vp is along the output end of the gate line to the far end.
  • the direction is gradually decreasing.
  • FIG. 1 is a schematic diagram of an array substrate wiring in the prior art; the present invention is based on changing the capacitance between a gate line and a source/drain.
  • a general source and The drain is connected by a conductive channel, and the conductive channel is generally disposed corresponding to the gate line. Therefore, the object of the present invention can be achieved by changing the capacitance between the conductive channel and the gate line.
  • the conductive channel is generally located on the active layer. In order to facilitate the description of the technical problem to be solved by the present invention and the technical means adopted, only the gate line and the active layer are illustrated in FIG.
  • a plurality of conductive channels 12 are disposed on the gate lines 10 along the output direction of the gate lines.
  • the conductive layer 12 is the opposite position of the active layer and the gate lines as shown in FIG.
  • the gate line 10 is along the direction from the output near end of the gate line to the output end.
  • the facing area of the conductive channel 12 is constant, that is, the facing area of the gate line 10 and the source/drain are constant.
  • the present invention is mainly for the purpose of changing the capacitance between the gate line and the source/drain layer, in order to For the purpose of explaining the technical problems to be solved by the present invention and the technical means to be used, only necessary parts are explained in the present invention, and other parts required for the array substrate are not described in the present invention as the prior art.
  • FIG. 2 is a schematic structural view of an array substrate, the array substrate includes a glass substrate 21 disposed on the bottom layer, and the grid substrate 10 is disposed on the glass substrate 21, and the array is substantially Further, a plurality of pairs of source S/drain D are disposed, and at least one insulating layer is disposed between the source S/drain D and the gate line 10; along the output proximal end of the gate line to the output distal end The facing area of the source/drain and the gate line is gradually reduced.
  • the array substrate in this embodiment includes an active layer 22, a first insulating layer 23, the gate line 10, a second insulating layer 24, and a second conductive layer 25 in this order from the glass substrate 21.
  • the second conductive layer 25 includes the source S/drain D.
  • the active layer 22 is disposed on the glass substrate, and the active layer 22 includes a plurality of conductive channels 221; a first insulating layer 23 is disposed on the upper side of the active layer 22, and the first insulating layer 23 includes an insulation composed of SiOx.
  • the second insulating layer 24 includes an insulating layer 241 composed of SiNx and an insulating layer 242 composed of SiOx; a first via hole 26 and a second via hole 27 are disposed through the first insulating layer 23 and a portion of the second insulating layer 24,
  • the source S is connected to the source region on the active layer through the first via 26 to realize the connection of the source S and the conductive channel 221; the drain D is connected to the active layer through the second via 26 The drain region on 22, thereby achieving the connection of drain D to conductive channel 221.
  • a corresponding light-shielding layer 28 is disposed on the glass substrate 21 for preventing the backlight from illuminating the conductive channel 221, thereby affecting the performance of the switching device.
  • a third insulating layer 29 is disposed between the light shielding layer 28 and the active layer 22, and the third insulating layer 29 includes an insulating layer 291 composed of SiNx and an insulating layer 292 composed of SiOx.
  • the active layer 22 is made of a low temperature polysilicon material, including an ion heavily doped region N+ disposed between the conductive channel 221 and a conductive channel 221 between the ion heavily doped regions, ions.
  • the heavily doped region N+ includes a drain region connecting the drain of the switching element and a source region connecting the source of the switching element.
  • an ion lightly doped region is disposed between the conductive channel 221 and the ion heavily doped region.
  • an ion lightly doped region N- is disposed between the channel and the ion heavily doped region N+ for reducing the influence on the on-state current of the device.
  • the second conductive layer of the array substrate is further provided with, for example, a flat layer, a common electrode layer, and the like, and details are not described herein.
  • an embodiment of the invention from the change of the conductive channel wherein the width of the gate line 10 is constant, which is W0, and is conductive in the direction from the output proximal end of the gate line to the output distal end.
  • the width of the channel in the transport direction is gradually reduced, as shown in the figure, L1 > L2 > L3.
  • the transmission direction in the present invention refers to the transmission direction of the signal on the gate line.
  • the signal is transmitted on the gate line from the output near end of the gate line to the output end of the gate line.
  • the width of the gate line 10 is gradually reduced along the direction from the output proximal end of the gate line to the output distal end, for example, the gate line can be set to a trapezoidal shape, and the output end of the trapezoidal longer bottom side gate line is tapered. The shorter base of the trapezoid is the output distal end of the grid line.
  • the width of the gate line 10 is stepwise reduced along the direction from the output near end of the gate line to the output end, and the output of the gate line is near.
  • the end is set to the widest step, and the output end of the gate line is set to the narrowest step.
  • the gate lines 10 are symmetrical along the center line of the transmission direction, and the gate lines are stepped on both sides of the center line.
  • the bottom side widths of the stepped structures are W1, W2, and W3, respectively, where W1 > W2 > W3.
  • the direction between the conductive channel and the gate line is gradually reduced along the direction from the output proximal end of the gate line to the output distal end, i.e., the source
  • the facing area of the pole/drain and the gate line is gradually reduced.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

一种阵列基板，阵列基板包括设置于底层的玻璃基板（21），在玻璃基板（21）上设置有栅线（10），阵列基板上还设置有多对源极（S）/漏极（D），源极（S）/漏极（D）与栅线（10）之间设置有至少一个绝缘层，其中，沿栅线（10）的输出近端至输出远端的方向，源极（S）/漏极（D）与栅线（10）的正对面积逐渐减小。

Description

一种阵列基板及显示装置
相关申请的交叉引用
本申请要求享有于2017年4月27日提交的名称为“一种阵列基板及显示装置”的中国专利申请CN201710285719.8的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明涉及显示技术领域，具体涉及一种阵列基板及显示装置。
背景技术
膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)是一种常见的显示方式。在TFT-LCD进行图像显示时，每一帧图像的切换是通过栅线扫描的方式实现。栅线为金属线，有金属线存在一定的电阻，随着传输距离的增大，扫描线上的电压会降低，这种现象称之为压降(Feedthrough)。现有液晶显示面板中的栅线压降(Feedthrough)的表达式为：
Figure PCTCN2017084536-appb-000001
其中，△Vp表示压降值，Cgs表示栅线与开关元件的源极/漏极之间的电容，Clc表示液晶电容，Cs表示存储电容，Vghl表示理想输入电压与实际输入电压的差值。沿栅线输出近端至输出远端的方向(即距离扫描信号驱动电路由近及远方向)，栅线实际输入电压逐渐降低，理想输入电压不变，因此Vghl逐渐增大。即压降值沿栅线输出近端至输出远端的方向逐渐增大。在液晶面板上△Vp的变化，会造成靠近栅线输入端的画面较亮，远离栅线输入端的画面较暗，影响面板显示均一性。
发明内容
为了解决现有技术中，由于压降的变化导致的面板显示不均匀的问题，本发明提供一种阵列基板及显示装置，相对于现有技术，本发明中的阵列基板及显示 装置的显示均一性较好。
本发明提供一种阵列基板，所述阵列基板包括设置于底层的玻璃基板，在所述玻璃基板上设置有栅线，阵列基板上还设置有多对源极/漏极，所述源极/漏极与所述栅线之间设置至少一个绝缘层，其中，沿所述栅线的输出近端至输出远端的方向，所述源极/漏极与所述栅线的正对面积逐渐减小。
本发明中的所述源极/漏极与所述栅线的正对面积逐渐减小，从而使得△Vp在整个面板上较为均一，保证了面板的显示均一性。
作为对本发明的进一步改进，还包括有源层，所述有源层包括导电沟道，所述源极与所述漏极通过所述导电沟道进行连接，从垂直阵列基板的方向看，所述源极/漏极与所述栅线的正对面积为所述导电沟道与所述栅线之间的正对面积。
进一步的，所述玻璃基板上依次设置所述有源层、第一绝缘层、所述栅线、第二绝缘层和第二导电层，所述第二导电层包括所述源极/漏极。
进一步的，所述第一绝缘层和所述第二绝缘层上设置有过孔，所述源极/漏极通过不同的过孔与所述导电沟道连接。
进一步的，所述有源层还包括位于所述导电沟道两侧的源极区和漏极区，所述源极区与所述源极连接，所述漏极区与所述漏极连接。
进一步的，沿所述栅线的输出近端至输出远端的方向，所述栅线宽度逐渐减小。
进一步的，所述栅线的宽度阶梯性减小。
进一步的，所述栅线关于沿传输方向的中心线对称，所述栅线在所述中心线的两侧均为阶梯结构。
通过改变栅极线的宽度的方式，使得所述源极和漏极与所述栅线的正对面积逐渐减小，该方法简便实用。
进一步的，沿所述栅线的输出近端至输出远端的方向，所述导电沟道沿传输方向的宽度逐渐减小。
本发明的另一方面，还提供一种显示装置，其中，包括以上所述的阵列基板。
本发明通过改变所述源极/漏极与所述栅线的正对面积，使得栅线上各处的压降相等，从而提升面板显示的均一性。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1是现有技术中的一种阵列基板布线示意图；
图2是本发明实施例中的阵列基板结构示意图。
图3是本发明一个实施例中的阵列基板布线示意图；
图4是本发明一个实施例中的阵列基板布线示意图；
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
下面将结合附图对本发明作进一步说明。
压降公式中的Cgs表示的为栅线与开关元件的源极/漏极之间的电容。即将栅线与源极/漏极等效为一个电容，其电容Cgs＝介电常数*电极间面积/电极间距离。其中的介电常数为常数，电极之间的距离取决于栅线与源极/漏极之间的距离；本领域技术人员可知，电极间面积指的是在栅线与源极/漏极的正对面积。因此，沿栅线的输出端近端至远端的方向，栅线与源极/漏极的正对面积逐渐减小，可以使得压降△Vp沿栅线的输出端近端至远端的方向逐渐降低。这样，通过调整栅线与源极/漏极的正对面积可以使得栅线的输出近端至输出远端的△Vp趋于一致，使得面板各处输出的电压均匀，提升面板显示的均一性。
如图1所示为现有技术中的一种阵列基板布线示意图；本发明是从改变栅线与源极/漏极之间的电容的角度出发的，在现有技术中，一般源极和漏极采用导电沟道进行连接，导电沟道一般与栅线对应设置，因此，只要改变导电沟道与栅线之间的电容即可实现本发明的目的。在现有技术中，导电沟道一般位于有源层上，为了便于说明本发明所要解决的技术问题以及所采用的的技术手段，在图1中仅仅示意出栅线以及有源层，图1为沿垂直于阵列基板的方向观察得到的阵列基板布线示意图，栅线10位于底层，有源层11位于栅线10上侧。本领域技术人员可知，沿栅线的输出方向上，在栅线10上设置有多个导电沟道12，如图1所示有源层与栅线的正对位置即为导电沟道12。如图1所示，在现有技术中，由于栅线的宽度以及导电沟道12的尺寸是均匀不变的，沿所述栅线的输出近端至输出远端的方向，栅线10与导电沟道12的正对面积是不变的，即栅线10与源极/漏极的正对面积是不变的。
本发明主要是对于从改变栅线与源极/漏极层之间的电容的角度出发的，为了 便于说明本发明所要解决的技术问题以及所采用的的技术手段，本发明中仅仅对必要的部分进行说明，阵列基板所需要的其他部分作为现有技术在本发明无需赘述。
在本发明的一个实施例中，一种阵列基板，图2为阵列基板的结构示意图，阵列基板包括设置于底层的玻璃基板21，在所述玻璃基板21上设置有栅线10，阵列基本上还设置有多对源极S/漏极D，所述源极S/漏极D与栅线10之间设置有至少一个绝缘层；沿所述栅线的输出近端至输出远端的方向，所述源极/漏极与所述栅线的正对面积逐渐减小。
如图2所示，本实施例中的阵列基板由玻璃基板21向上，依次包括有源层22、第一绝缘层23、所述栅线10、第二绝缘层24和第二导电层25，所述第二导电层25包括所述源极S/漏极D。其中，有源层22设置与玻璃基板上，有源层22包括多个导电沟道221；在有源层22上侧设置有第一绝缘层23，第一绝缘层23包括由SiOx构成的绝缘层231和由SiNx构成的绝缘层232；在第一绝缘层23上设置有栅线10，栅线10对应于导电沟道221进行设置；在所述栅线10上设置第二绝缘层24，第二绝缘层24包括由SiNx构成的绝缘层241和由SiOx构成的绝缘层242；贯穿第一绝缘层23和部分第二绝缘层24设置有第一过孔26和第二过孔27，所述源极S穿过第一过孔26连接有源层上的源极区，从而实现源极S与导电沟道221的连接；所述漏极D穿过第二过孔26连接有源层22上的漏极区，从而实现漏极D与导电沟道221的连接。
在本发明的一个实施例中，在玻璃基板21上对应导电沟道221设置有遮光层28，用于防止背光照射导电沟道221，影响开关器件性能。在所述遮光层28与所述有源层22之间设置有第三绝缘层29，第三绝缘层29包括由SiNx构成的绝缘层291和由SiOx构成的绝缘层292。
在本发明的一个实施例中，有源层22采用低温多晶硅材料制成，包括设置于导电沟道221两端的离子重掺杂区N+以及离子重掺杂区之间的导电沟道221，离子重掺杂区N+包括连接开关元件的漏极的漏极区和连接开关元件的源极的源极区。
在本发明的一个实施例中，在导电沟道221与离子重掺杂区之间设置有离子轻掺杂区。具体的，如图2所示，在沟道与离子重掺杂区N+之间设置有离子轻掺杂区N-，用于减小对器件开态电流的影响。
在一些实施例中，阵列基板的第二导电层上还设置有例如平坦层、公共电极层等，在此不再赘述。
如图3所示，为发明从对于导电沟道的改变出发的一个实施例，其中的栅线10的宽度不变，为W0，沿栅线的输出近端至输出远端的方向上，导电沟道沿传输方向的宽度逐渐减小，正如图中所示的L1>L2>L3。
本发明中的传输方向指的即为栅线上信号的传输方向，本发明中信号在栅线上由栅线的输出近端向栅线的输出远端传输。
在一个实施例中，沿栅线的输出近端至输出远端的方向，栅线10宽度逐渐减小，例如可栅线可以设置为梯形，梯形的较长的底边栅线的输出近端，梯形的较短的底边为栅线的输出远端。
如图4所示，为发明从对于栅线的改变出发的一个实施例，沿栅线的输出近端至输出远端的方向，栅线10的宽度阶梯性减小，将栅线的输出近端设置为最宽的阶梯，将栅线的输出近端设置为最窄的阶梯。
如图4所示，栅线10沿传输方向的中心线对称，所述栅线在中心线的两侧均为阶梯结构。如图4所示，沿栅线的输出近端至输出远端的方向，阶梯状结构的底边宽度分别为W1、W2和W3，其中W1>W2>W3。
图3和图4所示的两个实施例，沿着栅线的输出近端至输出远端的方向，导电沟道与所述栅线之间的正对面积逐渐减小，即所述源极/漏极与所述栅线的正对面积逐渐减小。从而使得面板上的压降均一，保证了面板显示均一性。
虽然已经参考优选实施例对本发明进行了描述，但在不脱离本发明的范围的情况下，可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是，只要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本发明并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (20)

  1. 一种阵列基板，所述阵列基板包括设置于底层的玻璃基板，在所述玻璃基板上设置有栅线，阵列基板上还设置有多对源极/漏极，所述源极/漏极与所述栅线之间设置至少一个绝缘层，
    其中，沿所述栅线的输出近端至输出远端的方向，所述源极/漏极与所述栅线的正对面积逐渐减小。
  2. 根据权利要求1所述的阵列基板，其中，还包括有源层，所述有源层包括导电沟道，所述源极与所述漏极通过所述导电沟道进行连接，从垂直阵列基板的方向看，所述源极/漏极与所述栅线的正对面积为所述导电沟道与所述栅线之间的正对面积。
  3. 根据权利要求2所述的阵列基板，其中，所述玻璃基板上依次设置所述有源层、第一绝缘层、所述栅线、第二绝缘层和第二导电层，所述第二导电层包括所述源极/漏极。
  4. 根据权利要求3所述的阵列基板，其中，所述第一绝缘层和所述第二绝缘层设置有多个过孔，所述源极/漏极分别通过不同的过孔与所述导电沟道连接。
  5. 根据权利要求4所述的阵列基板，其中，所述有源层还包括位于所述导电沟道两侧的源极区和漏极区，所述源极区与所述源极连接，所述漏极区与所述漏极连接。
  6. 根据权利要求1所述的阵列基板，其中，沿所述栅线的输出近端至输出远端的方向，所述栅线宽度逐渐减小。
  7. 根据权利要求2所述的阵列基板，其中，沿所述栅线的输出近端至输出远端的方向，所述栅线宽度逐渐减小。
  8. 根据权利要求3所述的阵列基板，其中，沿所述栅线的输出近端至输出远端的方向，所述栅线宽度逐渐减小。
  9. 根据权利要求4所述的阵列基板，其中，沿所述栅线的输出近端至输出远端的方向，所述栅线宽度逐渐减小。
  10. 根据权利要求5所述的阵列基板，其中，沿所述栅线的输出近端至输出远端的方向，所述栅线宽度逐渐减小。
  11. 根据权利要求6所述的阵列基板，其中，所述栅线的宽度阶梯性减小。
  12. 根据权利要求11所述的阵列基板，其中，所述栅线关于传输方向的中心线对称，所述栅线在所述中心线的两侧均为阶梯结构。
  13. 根据权利要求1所述阵列基板，其中，沿所述栅线的输出近端至输出远端的方向，所述导电沟道沿传输方向的宽度逐渐减小。
  14. 根据权利要求2所述阵列基板，其中，沿所述栅线的输出近端至输出远端的方向，所述导电沟道沿传输方向的宽度逐渐减小。
  15. 根据权利要求3所述阵列基板，其中，沿所述栅线的输出近端至输出远端的方向，所述导电沟道沿传输方向的宽度逐渐减小。
  16. 根据权利要求4所述阵列基板，其中，沿所述栅线的输出近端至输出远端的方向，所述导电沟道沿传输方向的宽度逐渐减小。
  17. 根据权利要求5所述阵列基板，其中，沿所述栅线的输出近端至输出远端的方向，所述导电沟道沿传输方向的宽度逐渐减小。
  18. 根据权利要求6所述阵列基板，其中，沿所述栅线的输出近端至输出远端的方向，所述导电沟道沿传输方向的宽度逐渐减小。
  19. 根据权利要求11所述阵列基板，其中，沿所述栅线的输出近端至输出远端的方向，所述导电沟道沿传输方向的宽度逐渐减小。
  20. 一种显示装置，其中，包括一种阵列基板，所述阵列基板包括设置于底层的玻璃基板，在所述玻璃基板上设置有栅线，阵列基板上还设置有多对源极/漏极，所述源极/漏极与所述栅线之间设置至少一个绝缘层，
    其中，沿所述栅线的输出近端至输出远端的方向，所述源极/漏极与所述栅线的正对面积逐渐减小。
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