WO2018182168A1 - 마그네트론 스퍼터링 장치의 자석 제어 시스템 - Google Patents

마그네트론 스퍼터링 장치의 자석 제어 시스템 Download PDF

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Publication number
WO2018182168A1
WO2018182168A1 PCT/KR2018/001673 KR2018001673W WO2018182168A1 WO 2018182168 A1 WO2018182168 A1 WO 2018182168A1 KR 2018001673 W KR2018001673 W KR 2018001673W WO 2018182168 A1 WO2018182168 A1 WO 2018182168A1
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WIPO (PCT)
Prior art keywords
magnet
magnetic
magnetron sputtering
unit
control system
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PCT/KR2018/001673
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English (en)
French (fr)
Korean (ko)
Inventor
김정건
소병호
전명우
고무석
이구현
Original Assignee
한국알박(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 한국알박(주) filed Critical 한국알박(주)
Priority to CN201880005024.2A priority Critical patent/CN110140191B/zh
Priority to JP2019536061A priority patent/JP7084931B2/ja
Publication of WO2018182168A1 publication Critical patent/WO2018182168A1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Definitions

  • the present invention relates to a system for controlling magnets that can be used in a magnetron sputtering apparatus, and the like, and more particularly, to a magnet control system of a magnetron sputtering apparatus for controlling a connection between a plurality of magnet structures.
  • Sputtering apparatus is a device for depositing a thin film on a substrate in the manufacture of semiconductors, FPD (LCD, OLED, etc.) or solar cells.
  • the sputtering apparatus may also be used in a roll to roll apparatus.
  • the magnetron sputtering device injects gas into a vacuum chamber to generate a plasma, collides with the target material to be deposited, and then collides with the target material to be deposited.
  • Techniques for depositing sputtered particles on a substrate are used.
  • the magnet unit is disposed on the rear surface of the target so as to form a magnetic force line on the target. That is, the substrate is provided on the front surface of the target, and a magnet unit is formed on the rear of the target.
  • Such a magnetron sputtering apparatus is widely used because of the advantages of being able to manufacture a thin film at a relatively low temperature, the ions accelerated by the electric field are densely deposited on the substrate, and the deposition rate is high.
  • inline or cluster systems are used to deposit thin films on large area substrates.
  • In-line and cluster systems are provided with a plurality of processing chambers between the load chamber and the unload chamber so that the substrate loaded into the load chamber passes through the plurality of processing chambers and proceeds in a continuous process.
  • the sputtering apparatus is provided in at least one processing chamber, and magnet units are installed at regular intervals.
  • the erosion of the target surface is determined by the plasma density by the electric field and the magnetic field.
  • the magnet unit since the magnet unit has a ground potential applied to an edge, that is, at least one end in the longitudinal direction, the plasma density of the edge of the substrate is larger than that of other regions, and thus the sputtering speed of the target is faster than that of other regions. Therefore, the thickness distribution of the thin film deposited on the substrate is not uniform, causing a problem of deterioration of the film quality distribution, and a problem of decreasing the target efficiency due to excessive erosion of the target specific portion due to the plasma density difference.
  • Another way to solve the problem is to adjust the strength of the magnetic field on the target surface using a shunt or the like, adjust the distance using a liner at the edge of the magnet, or use a Z-axis motor at the edge of the magnet. How to add it.
  • all of these methods increase manufacturing costs, require manual adjustment of the strength of the magnetic field, and require several repetitive operations because the adjustment of the magnetic field strength is not performed locally. There is.
  • the magnet control system of the magnetron sputtering apparatus of the present invention includes a drive power supply unit; A magnetic generator comprising a plurality of magnet assemblies; And a magnetic controller including a switch controllable to selectively connect one or more of the plurality of magnet assemblies to the driving power supply unit.
  • the driving power supply unit is connected to an external power source, the power supply unit for converting AC into direct current; And a polarity switching unit for switching the polarity of the power applied in connection with the power supply unit.
  • the magnetic control unit may be included in the driving power supply unit. According to an embodiment of the present invention, the magnetic control unit may control the opening and closing of the switch so that at least one region of the magnetic generating unit may have an intensity of a magnetic field different from that of other regions.
  • the magnetic control unit may control the at least one region of the magnetic generating unit to have a strength of a magnetic field different from that of other regions by adjusting at least one of a voltage and a current supplied from the driving power supply unit.
  • the magnetic control unit may control a series connection, a parallel connection, or both of the connections between the plurality of magnet assemblies.
  • each of the magnet assemblies includes one or more magnet structures, and in the case of a plurality of magnet structures, the magnet assemblies may be connected in series, in parallel, or both.
  • each of the magnet structures may include an electromagnet, a combination of a permanent magnet and an electromagnet, or both.
  • At least some of the plurality of magnet assemblies may include: a first magnet group having a magnetic pole selected from an N pole and an S pole; And a second magnet group having a magnetic pole different from that of the first magnet group among the N pole or the S pole.
  • the second magnet group may be disposed outside the first magnet group.
  • the magnetron sputtering apparatus of the present invention includes a substrate seating portion on which the substrate is mounted; A magnetic generating unit spaced apart from the substrate seating unit at a predetermined interval and including a plurality of magnet assemblies; A driving power supply unit connected to the magnetic generator to supply power to the magnetic generator; A magnetic control unit including a switch for selectively connecting at least one of the driving power supply unit and the plurality of magnet assemblies; And at least one target portion provided between the substrate seating portion and the magnetic generating portion.
  • Magnetron sputtering method of the present invention the step of confirming the degree of surface erosion according to the position of the target; And adjusting the intensity of the magnetic field of the magnet structure according to the distribution of the surface erosion degree of the target to perform sputtering.
  • the step of performing the sputtering may be by a magnet control system of the magnetron sputtering apparatus according to an example of the present invention.
  • the intensity control of the magnetic field controls one or more of a current applied to the magnet structure and a voltage applied to the magnet structure, or when there are a plurality of magnet structures, between the magnet structures. It can be done by controlling the connection, or by controlling both.
  • the magnet control system of the magnetron sputtering apparatus provided in the embodiment of the present invention, it is possible to prevent the local transient erosion of the target in the magnetron sputtering apparatus by placing a plurality of magnets in series, parallel or both combinations And there is an effect that can improve the in-plane distribution.
  • the magnet control system of the magnetron sputtering apparatus provided in the embodiment of the present invention, it is possible to adjust the strength of the magnetic field using the voltage and current applied to the wound wire of the magnet structure.
  • the intensity of the magnetic field of the magnet may be locally adjusted or the intensity of the magnetic field of the entire region of the magnet structure may be adjusted. That is, while maintaining the vacuum inside the sputtering device has an effect that can adjust the strength of the magnetic field in a simple manner outside the device.
  • FIG. 1 is a schematic diagram showing the overall configuration of an electromagnet control system of a magnetron sputtering apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram illustrating an example of a state in which all switches are closed between the driving power supply unit and all the magnet assemblies by the magnetic control unit in the electromagnet control system according to the exemplary embodiment of the present invention.
  • FIG. 3A is a schematic diagram (only a switch in a closed state) showing an example in which a parallel connection is formed between magnet assemblies by selectively forming only a part of switches in the electromagnet control system shown in FIG. 2;
  • FIG. 3B is a schematic diagram (only a switch in the closed state) showing an example in which a series connection is formed between the magnet assemblies by selectively forming only a part of switches in the electromagnet control system shown in FIG. 2.
  • FIG. 4 is a diagram showing a winding direction of a wire connecting each magnet of the magnet assembly and a direction of a current formed in each magnet assembly in the magnet unit of the embodiment of the present invention.
  • 5A and 5B are plan views schematically showing the structure of a magnet unit according to an embodiment of the present invention.
  • FIG. 6 is a cross-sectional view schematically showing the structure of a sputtering apparatus according to an embodiment of the present invention.
  • FIG. 7A to 7D illustrate, as an embodiment of the present invention, a magnetic unit including a plurality of magnet structures as shown in FIG. 5A, and a part or all of the magnet assemblies are connected to a driving power supply unit using a switch, and then connected.
  • FIG. 7A is a diagram illustrating the arrangement of the magnetic units configured to measure the magnetic field strength and the positions at which the magnetic field strengths are measured.
  • 7B is a comparative example, which is a diagram showing a state in which a state is blocked so that no current flows in all the magnet assemblies.
  • 7C is a diagram illustrating a state in which a current flows only in a magnet assembly disposed at the center as an embodiment.
  • FIG. 7D is a diagram illustrating another state in which a current is connected to all three magnet assemblies in parallel.
  • the magnet control system described below is for use in a magnetron sputtering apparatus and relates to a magnet control system capable of controlling the local magnetic field strength in an effective manner.
  • FIG. 1 is a schematic diagram showing the overall configuration of an electromagnet control system of a magnetron sputtering apparatus according to an embodiment of the present invention.
  • FIG. 1 each structure of the electromagnet control system of the magnetron sputtering apparatus of this invention is demonstrated in detail.
  • the magnet control system of the magnetron sputtering apparatus of the present invention includes a driving power supply unit 100; A magnetic generator 300 including a plurality of magnet assemblies; And a magnetic controller 200 including a switch controllable to selectively connect one or more of the plurality of magnet assemblies to the driving power supply unit.
  • the driving power supply unit of the present invention obtains a current from an external power source to allow a current to flow through the magnetic control unit to the magnetic generating unit.
  • the driving power source may be an AC current flowing from the external power source.
  • the current flowing through the driving power supply unit may be controlled by a magnetic controller to be described below to transmit current to the magnet assembly of some or all of the magnetic generating units.
  • a magnetic generating unit which will be described later, including a combination of magnet assemblies, receives a current from a magnet assembly selected by the magnetic controller to generate a magnetic field.
  • the driving power supply unit is connected to an external power source, the power supply unit for converting AC into direct current; And a polarity switching unit for switching the polarity of the power applied in connection with the power supply unit.
  • the power supply unit 110 of the present invention may serve to convert the AC current introduced from the outside into a DC current.
  • the power supply unit may be for supplying a constant voltage and current by converting AC into direct current.
  • the polarity switching unit 120 of the present invention may play a role of supplying a current having a predetermined polarity by converting the polarity in a predetermined direction irrespective of the polarity of the DC current supplied through the power supply unit in any direction.
  • the magnetic control unit to be described later may be included in the driving power supply unit.
  • the magnetic controller to be described later may be provided as a configuration included in the driving power supply unit.
  • the magnet control system of the present invention when configured as a magnet control device, it may seem that only the driving power source and the magnetic generator are provided in appearance, which is also within the scope of the present invention.
  • the magnetic control unit of the present invention is formed to include at least one switch, and may control the opening and closing of the formed switch to selectively flow a current to a part or all of the magnet assembly included in the magnetic generating unit. .
  • the magnetic control unit may control the opening and closing of the switch so that at least one region of the magnetic generating unit may have an intensity of a magnetic field different from that of other regions.
  • the magnetic control unit may adjust the current to flow only in the wire of the selective magnet assembly of the magnetic generating unit, and may also adjust the strength of the voltage or current applied to the selective magnet assembly.
  • the electromagnet control system of the present invention can locally control the intensity of the magnetic field in the magnetron sputtering device, and prevent the local excessive erosion of the target and improve the distribution of in-plane sputtering.
  • the magnetic control unit may control the at least one region of the magnetic generating unit to have a strength of a magnetic field different from that of other regions by adjusting at least one of a voltage and a current supplied from the driving power supply unit.
  • the magnetic control unit may control a series connection, a parallel connection, or both of the connections between the plurality of magnet assemblies.
  • the plurality of magnet assemblies may be connected by variously formed circuits.
  • the structure of the circuit is not particularly limited as long as the current flowing through each magnet assembly can be controlled by opening and closing the switch according to the user's intention.
  • the controller of the present invention may be a concept including a switch, a circuit connecting respective magnet assemblies, a circuit connecting a driving power supply unit and a magnetic generator, and a device capable of controlling a current flowing through each circuit.
  • the magnetic generator is formed to include a plurality of magnet assemblies.
  • the concept of the magnet unit and the magnet structure is additionally used in addition to the magnet assembly.
  • Each magnet assembly includes a plurality of magnet structures.
  • Each of the magnetic structures may be a structure connected to each other by a wire.
  • the magnetic generator is formed to include a plurality of magnet assemblies.
  • the magnet unit described in the present invention is a concept including one or more magnet assemblies.
  • the magnet assembly is used as a concept to refer to a structure formed by connecting one or more magnet structures in series, in parallel, or both by wires.
  • each magnet structure includes an electromagnet, a permanent magnet including an electromagnet, or both.
  • a magnetic generating unit formed of a combination of a magnetic structure, which is a small concept, is sequentially described.
  • each of the magnet assembly, one or more magnet plural structures may be connected in series, in parallel or both by a wire.
  • each of the magnet structures may include an electromagnet, a combination of permanent magnets and electromagnets, or both.
  • each of the magnet structures may be a structure in which an electromagnet is added to a permanent magnet.
  • each of the magnet structures may be a structure wound with a wire such as an electromagnet on a permanent magnet.
  • the magnetic field may change depending on the number of times the wire is wound.
  • the magnetic structure of the present invention may be able to adjust the magnetic field of each magnetic structure by adjusting the voltage, current flowing through the wire.
  • the strength of the magnetic field implemented according to the shape of the magnetic structure, the material of the magnetic structure, the number of windings of the coil, and the material of the coil may be changed.
  • the structure of the magnet structure is not particularly limited, and the magnet structure of the present invention is used as a concept including all structures capable of generating a magnetic field in various ways.
  • Magnet structure of the present invention may be a structure that can be formed by connecting a plurality of magnet assembly.
  • the magnetic controller includes a plurality of switches SW1 to SW8.
  • FIG. 3A is a schematic diagram showing an example in which a parallel connection is formed between magnet assemblies by selectively forming only a part of switches in the electromagnet control system shown in FIG. 2 (only switches in the closed state are shown) ego,
  • FIG. 3B is a schematic view showing an example in which a series connection is formed between the magnet assemblies by selectively forming only a part of switches in the electromagnet control system shown in FIG. 2 (only the switches in the closed state are shown) to be.
  • the magnet unit and the magnet assembly of the present invention are both concepts including one or more magnet structures.
  • One or more magnet structures may be included in the magnet assembly, and when there are a plurality of magnet structures, they are connected to each other to form a magnet assembly.
  • One or more magnet assemblies may again be included in the magnet unit, and when there are a plurality of magnet assemblies, they are connected to each other to form a magnet unit.
  • each magnet structure may be a structure formed by connecting wires in series, in parallel, or both by wires.
  • the magnet unit and the magnet assembly may be formed by arranging a plurality of magnet structures on the yoke.
  • each of the magnet structures formed on the yoke may be connected to each other in a structure including a series structure, a parallel structure, or both.
  • the plurality of magnet structures may be variously arranged according to the magnetic field design of the user and installed on the yoke.
  • the magnetic structure may be firmly installed on the yoke by an adhesive.
  • the fixed structure may be secured by fixing between the magnet structure and the yoke using a bolt.
  • the method for fixing the magnet structure on the yoke may use a variety of additional means in addition to using an adhesive or using a bolt.
  • the number of magnet structures included in the magnet unit may be determined according to the size of the sputtering apparatus. If a large area substrate is required for sputtering, a magnet unit containing more magnet structures may be required.
  • the magnet unit is one magnet unit, and the number of magnet assemblies included in the magnet unit may be variously determined according to a user's control design.
  • the magnet units formed may constitute the magnetic generator of the magnetron sputtering device as a single unit, or may be provided in plural and constitute the magnetic generator of the magnetron sputtering device in various arrangements.
  • Magnetic unit according to an embodiment of the present invention by controlling one or more of the voltage and current applied to each of the wires of the magnetic structure is capable of controlling so that at least one region of the magnetic unit has a different strength of the magnetic field than the other region Can be.
  • the strength of the magnetic field is different from one region and the other region of the magnet unit Can be controlled to have.
  • the connection of the circuit is controlled by installing a switch or a relay that can block a current flowing in a wire installed in the magnet structures located in one region and the magnet structures located in another region.
  • one region and the other region of the magnet unit may be controlled to have different strengths of the magnetic field.
  • FIG. 4 is a diagram showing a winding direction of a wire connecting each magnet of the magnet assembly and a direction of a current formed in each magnet assembly in the magnet unit of the embodiment of the present invention.
  • the region shown by the thin solid line in FIG. 4 represents each of the magnet assemblies 310, 320, and 330 provided as an example.
  • Each of the rounded square structures shown in FIG. 4 corresponds to an upper surface of the magnet structure.
  • the magnet structure is not particularly limited in the present invention as long as the wire is a structure that can be wound, for example, a magnet of one of a T-type structure, an I-type structure, an F-type structure, an E-type structure, or a structure of each shape. It may include one magnet of the structure rotated by a predetermined angle.
  • Each magnet formed in FIG. 4 may be formed so that a wire is wound.
  • Each magnet structure may be connected to be formed so that the upper surface abuts.
  • each of the magnet structure is formed so as not to be in contact with each other between the wire winding the respective magnet structure, even if the upper surface is connected to the adjacent magnet structure formed. Since the current flows through the wire, a short may occur when the wire contacts the wire of the adjacent magnet structure.
  • each magnet assembly included in the magnet unit may be identified.
  • 4 shows the configuration of three magnet assemblies 310, 320, 330.
  • Each magnet assembly shown in FIG. 4 is a structure in which each magnet structure is connected with a wire and connected in series with each other. 4, the winding direction (curve arrow) of the wire which connects each magnet structure, and the direction of the electric current (linear arrow) formed in each magnet assembly are shown by the arrow, respectively.
  • Figure 4 is shown as an example of the present invention to explain the structure between the magnet unit, the magnet assembly and the magnet structure of the present invention
  • the magnet unit according to the design of the magnetron sputtering apparatus is a magnet structure or a magnet assembly that is variously arranged It can be formed to include.
  • a magnet unit having a shape as shown in FIGS. 5A and 5B may be formed.
  • FIGS. 5A and 5B are plan views schematically showing the structure of a magnet unit according to an embodiment of the present invention.
  • the first magnet group and the second magnet group formed in the magnet unit will be described with reference to FIGS. 5A and 5B.
  • the first magnet group and the second magnet group below are formed by connecting a plurality of magnet structures.
  • the first magnet group and the second magnet group are used in another concept from the magnet assembly.
  • the first magnet group and the second magnet group are for explaining a magnet structure group having magnetic poles included in the magnet unit, and the magnet structures forming the magnet group may be disposed adjacent or at a predetermined distance.
  • At least some of the plurality of magnet assemblies may include: a first magnet group having a magnetic pole selected from an N pole and an S pole; And a second magnet group having a magnetic pole different from that of the first magnet group among the N pole or the S pole.
  • the second magnet group may be disposed outside the first magnet group.
  • a plurality of the magnet structure may be disposed on the yoke to form a magnet unit.
  • Yoke 310 may have a flat or cylindrical shape.
  • the yoke 310 may use, for example, ferritic stainless steel.
  • the first magnet group 20 and the second magnet group 30 may be installed on one surface or the surface of the yoke 310 to form a magnet unit. That is, the first magnet group and the second magnet group may be installed on one surface of the flat yoke 310 or the first magnet group and the second magnet group may be installed on the surface of the cylindrical yoke.
  • the formed magnet unit may include a first magnet group and a second magnet group, and may be disposed as one of the forms of the magnet unit illustrated in FIGS.
  • FIGS. 5A to 5C two or more of the shapes of the magnet unit illustrated in FIGS. 5A to 5C may be arranged to be connected to each other. Meanwhile, the magnet unit may be disposed in a form different from those of the magnet unit illustrated in FIGS. 5A to 5C.
  • the arrangement of the first magnet group and the second magnet group will be described in detail.
  • the first magnet group 20 is fixed to the center of the yoke, and the second magnet group 30 is spaced apart from the first magnet group so as to be spaced apart from the first magnet group. It can be fixed around the outside of the group.
  • the height and width of the first magnet group and the second magnet group may be the same. However, the width and height may vary depending on design needs such that the width of the first magnet group may be wider or narrower than the second magnet group, and the height of the first magnet group may be higher or lower than the height of the second magnet group. It can be modified.
  • the first magnet group is formed at a predetermined height from one surface of the yoke and may be provided in a straight form or a closed loop shape. That is, the first magnet group may be provided in a straight line shape having a predetermined length and width as shown in FIG. 5A, or may be provided in a closed loop shape as shown in FIG. 5B.
  • the straight form that is, the shape may be provided in a substantially bar shape having a predetermined width in the x-axis direction and a predetermined length in the y-axis direction perpendicular to the x-axis direction.
  • the x-axis direction may be the same as the moving direction of the substrate in the magnetron sputtering device. As shown in FIG.
  • the first magnet group 20 in the closed loop form is spaced apart from each other at predetermined intervals and has the same length of the first and second long sides 22a and 22b and the first and second long sides.
  • a first short side portion and a second short side portion 24a and 24b formed to connect between the first long side portion and the second long side portion may be included at an edge of the portion.
  • the first short side portion and the second short side portion may be provided in a straight line to connect edges of the first long side portion and the second long side portion.
  • the first magnet group 20 may be provided such that the long side portion and the short side portion have a rectangular shape.
  • the first magnet group may be provided in various shapes having not only a rectangular shape but also a circular or closed loop shape.
  • the corner portion where the long side portion and the short side portion meet may be formed round.
  • the long side portion of the first magnet group may be provided spaced apart from the central portion of the yoke by a predetermined interval.
  • the second magnet group 30 may be spaced apart from the first magnet group 20 by a predetermined interval, and may be provided outside the first magnet group 20. That is, the second magnet group 30 may be provided outside the group of the first magnet 20 having a linear shape or a closed loop shape.
  • the second magnet group may be provided in the same shape as the first magnet group, and the second magnet group may also be provided in a closed loop shape. That is, it may be provided in a closed loop shape as shown in Figure 5b. As shown in FIG. 5B, the closed loop-shaped second magnet group is spaced apart from the first long side portion and the second long side portions 22a and 22b of the first magnet group by a predetermined distance and longer than the third long side portion and the fourth long side.
  • the portions 32a and 32b may be provided, and the third short side portion and the fourth short side portion 34a and 34b are connected to connect the third long side portion and the fourth long side portion at the edges of the third long side portion and the fourth long side portion.
  • the second magnet group 30 may be provided to surround the first magnet group 20 while the long sides 32a and 32b and the short sides 34a and 34b have a rectangular shape.
  • the second magnet group 30 may be provided in various shapes having a closed loop shape as well as a rectangular shape. For example, the corner portion where the long side portion and the short side portion meet may be formed round.
  • the magnet structures forming the first magnet group and the second magnet group may be formed to have different polarities, respectively. That is, if the permanent magnets forming the first magnet group have the N pole, the permanent magnets forming the second magnet group have the S pole, and if the permanent magnets of the first magnet group have the S pole, The permanent magnet may have an N pole.
  • the permanent magnets of the magnet unit may have an array of S-N-S or an array of N-S-N.
  • the permanent magnet of the magnet unit may have an arrangement of S-N-N-S or an arrangement of N-S-S-N.
  • the present invention may include not only a case in which a plurality of magnet units including two magnets having different polarities are provided, but also a case in which a plurality of magnets are arranged in different polarities, so that magnets may be arranged in NS -...- SN. .
  • the magnetron sputtering apparatus of the present invention includes a substrate seating portion on which the substrate is mounted; A magnetic generating unit spaced apart from the substrate seating unit at a predetermined interval and including a plurality of magnet assemblies; A driving power supply unit connected to the magnetic generator to supply power to the magnetic generator; A magnetic controller including a switch controllable to selectively connect one or more of the driving power supply unit and the plurality of magnet assemblies; And at least one target portion provided between the substrate seating portion and the magnetic generating portion.
  • the magnetron sputtering apparatus described in the present invention includes a magnetic generating portion, and the magnetic generating portion is provided with one or more magnet units described above. Below, each part which comprises a magnetron sputtering apparatus and a magnetron sputtering apparatus is demonstrated.
  • FIG. 6 is a cross-sectional view schematically showing the structure of a sputtering apparatus according to an embodiment of the present invention.
  • the sputtering apparatus provided in the present invention includes a magnet unit 630, a backing plate 650, a target 640, and a substrate mounting portion. 620 may include. On the substrate seating portion, a substrate 610 is provided on which a sputtered layer is formed.
  • the magnet unit 630 may include a yoke 310, a first magnet group in the center, and a second magnet group outside the first magnet group. Each magnet group may include a magnet structure composed of a magnet 100 and a wire 200 winding the magnet.
  • the substrate seating portion 620 and the magnet unit 630 may be provided to face each other, that is, a predetermined distance is spaced apart from each other or inclined at a predetermined angle.
  • the substrate seating portion may be provided in the upper side, the lower side or the side in the device, the magnet unit may be provided to face this.
  • the magnet unit may be provided on the upper side
  • the magnet unit may be provided on the lower side.
  • the magnet unit may be provided on the other side facing it.
  • the magnet unit 630 illustrated in FIG. 6 is provided to face the substrate as an example of the present invention, but is not necessarily provided to face the substrate. In another example (not shown) of the present invention, the magnet unit may be provided to be spaced apart from the substrate by a predetermined distance.
  • One example of the magnet unit of the present invention may include a yoke 310, a first magnet group in the center formed on the yoke and a second magnet group provided on the left and right sides of the first magnet group.
  • the first magnet group and the second magnet group include a structure in which a plurality of magnet structures are connected.
  • two or more magnet units may be provided, and the magnet unit may have an x-axis direction, a y-axis direction perpendicular to the x-axis direction, and an x-axis direction. It is also possible to reciprocate in at least one of the z-axis direction orthogonal to both and the y-axis direction.
  • two or more magnet units 630 may be provided.
  • the at least two magnet units may be provided in the same size and the same structure and spaced apart at the same interval.
  • the backing plate 650 is provided between the magnet unit 630 and the substrate seating part 620.
  • the target 640 is fixed to one surface of the backing plate. That is, the target is fixed to one surface of the backing plate facing the substrate 610.
  • the target 640 is fixed to the backing plate 650 and is made of a material to be deposited on the substrate 610.
  • the target 640 may be a metal material or an alloy including the metal material.
  • the target 640 may also be a metal oxide, metal nitride, or dielectric.
  • the target may be an element selected from Mg, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Pd, Pt, Cu, Ag, Au, Zn, Al, In, C, Si, Sn, and the like.
  • the main ingredient may be used.
  • the backing plate 650 and the target 640 may have a total thickness of about 5 mm to 50 mm.
  • the substrate seating part 620 secures the substrate so that the deposition material may be uniformly deposited on the substrate 610.
  • the substrate When the substrate is mounted, the substrate may be fixed to the edge of the substrate by using fixing means, or the substrate may be fixed to the rear surface of the substrate.
  • the substrate seating part may be provided in a substantially rectangular or circular shape having a shape of a substrate to support and fix all of the rear surfaces of the substrate.
  • the substrate seating portion may be provided with four bars having a predetermined length spaced apart from each other at predetermined intervals to fix the edge portion of the substrate, and the edges of the bars contact each other to provide a hollow rectangular frame shape.
  • the substrate mounting portion may move in one direction while the substrate is mounted.
  • the thin film may be deposited on the substrate while progressing in one direction. Therefore, a moving means (not shown) for moving the substrate seating part may be provided on a surface on which the substrate seating part is not seated.
  • the moving means may include a roller for moving in contact with the substrate seating portion, and a magnetic conveying means for moving with magnetic force spaced apart from the substrate seating portion.
  • part of the substrate seating portion may function as a moving means.
  • the substrate seating part 620 may be provided with a lift pin for lifting the substrate 610.
  • the substrate may be a substrate for manufacturing a semiconductor, an FPD (LCD, OLED, etc.), a solar cell, or the like, and may be a silicon wafer, glass, or the like.
  • the substrate may be a film substrate applied to a roll-to-roll. In this embodiment, a large area substrate such as glass is used.
  • one or more of the voltage and current flowing in the unit of the magnet unit included in the magnetron sputtering device may be adjusted.
  • a method of supplying a current flowing through a wire installed in a magnet unit positioned in one region and a magnet unit positioned in another region may be used from a separate power source.
  • an additional device may be provided in the driving power supply unit to control a current or voltage.
  • the adjustment of the voltage and the current may be performed using various means, such as a switch or relay of the magnetic controller or configuring a series or parallel circuit.
  • various means such as a switch or relay of the magnetic controller or configuring a series or parallel circuit.
  • the magnet portion may be provided within 30% of the longitudinal direction from the edge of the target portion.
  • the magnet part may be disposed in an area within 30% of the portion where the erosion of the target is greatest (ie, the longitudinal direction from the edge of the target). That is, the erosion of the target occurs a lot in the edge portion, it is possible to control the strength of the magnetic field by providing a magnetic structure at a position opposite to the portion and by adjusting the voltage, current, etc. applied to the wire. As a result, by controlling the intensity of the magnetic field in the portion where the erosion of the target is excessively formed to form a uniform degree of erosion as a whole, it is possible to prevent the local excessive erosion phenomenon.
  • the magnetic generating unit may further include cooling means provided on at least one side of the magnetic structure.
  • the magnet structure included in the magnet portion of the magnetron sputtering apparatus according to the present invention the magnet structure may be gradually heated when a predetermined current or voltage is applied to the wire. Therefore, cooling means for cooling the magnet structure may be provided on at least one side of the magnet structure.
  • a plurality of magnet structures may be coupled to each other so that at least two magnets may be provided in the horizontal direction, and the cooling means may be provided between the permanent magnets disposed in the horizontal direction.
  • the cooling means may comprise a refrigerant supply for supplying water, air or other refrigerant and a refrigerant circulation path through which they can be circulated.
  • the magnetic generating unit may further include a molding unit unitizing the yoke, the magnet structure, and the cooling means.
  • the magnetron sputtering method of the present invention the step of confirming the degree of surface erosion according to the position of the target; And adjusting the intensity of the magnetic field of the magnet structure according to the distribution of the surface erosion degree of the target to perform sputtering.
  • the intensity of the magnetic field of the magnet structure can be adjusted while maintaining the degree of vacuum around the target without opening the chamber of the magnetron sputtering apparatus. This can prevent local excessive erosion of the target without additional process or manual labor and improve the in-plane distribution.
  • the step of performing the sputtering may be by a magnet control system of the magnetron sputtering apparatus according to an example of the present invention.
  • the intensity control of the magnetic field controls one or more of a current applied to the magnet structure and a voltage applied to the magnet structure, or when there are a plurality of magnet structures, between the magnet structures. It can be done by controlling the connection, or by controlling both.
  • the current and voltage applied to the magnet structure may be performed by using a driving power supply unit of the magnetron sputtering apparatus according to an embodiment of the present invention.
  • the connection between the magnet structures may be performed by using a switch included in a circuit formed between each magnet structure of the magnetron sputtering apparatus according to an embodiment of the present invention.
  • the step of confirming the degree of surface erosion according to the position of the target may be performed by a method of verifying by a worker, or may be performed by a method of operating a computer automation system.
  • this operation can also be performed by a method determined by the operator directly
  • the method may be performed by operating a computer automation system.
  • FIG. 7A to 7D illustrate, as an embodiment of the present invention, a magnet unit including a plurality of magnet structures as shown in FIG. A schematic diagram showing the structure of the magnetic structures.
  • a plurality of magnet structures each having a T-shaped permanent magnet and a wire wound around the permanent magnet were manufactured.
  • the magnet structures were connected to each other to form a magnet unit as shown in FIG. 5B.
  • a switch was used to selectively apply current to some or all of the magnet assemblies, and the magnetic field strengths at the center points of the first and second magnet groups were measured.
  • FIG. 7A is a diagram illustrating the arrangement of magnetic units configured to measure the magnetic field strength and the positions at which the magnetic field strengths are measured
  • FIG. 7B is a comparative example and shows a state in which a current is cut off from all magnet assemblies.
  • FIG. 7C is a diagram illustrating a state in which current flows only in a magnet assembly disposed at the center as one embodiment (sample 1)
  • FIG. 7D is a diagram illustrating three magnet assemblies as another embodiment (sample 2). The figure shows parallel connection so that current flows in all.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Mechanical Engineering (AREA)
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PCT/KR2018/001673 2017-03-31 2018-02-08 마그네트론 스퍼터링 장치의 자석 제어 시스템 WO2018182168A1 (ko)

Priority Applications (2)

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CN201880005024.2A CN110140191B (zh) 2017-03-31 2018-02-08 磁控管溅射装置的磁铁控制系统
JP2019536061A JP7084931B2 (ja) 2017-03-31 2018-02-08 マグネトロンスパッタリング装置の磁石制御システム

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KR1020170042219A KR101885123B1 (ko) 2017-03-31 2017-03-31 마그네트론 스퍼터링 장치의 자석 제어 시스템
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JPH07233473A (ja) * 1994-02-22 1995-09-05 Hitachi Ltd マグネトロンスパッタ装置
JPH1126230A (ja) * 1997-05-06 1999-01-29 Anelva Corp スパッタリング装置の磁界発生装置
KR20110090133A (ko) * 2010-02-02 2011-08-10 위순임 처리효율이 향상된 스퍼터 장치
KR20110115794A (ko) * 2010-04-16 2011-10-24 김창수 마그네트론 스퍼터링장치

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JPH05311431A (ja) * 1992-05-07 1993-11-22 Hitachi Ltd スパッタリング装置
JPH0881769A (ja) * 1994-09-16 1996-03-26 Fujitsu Ltd スパッタ装置
JP3403550B2 (ja) * 1995-06-29 2003-05-06 松下電器産業株式会社 スパッタリング装置とスパッタリング方法
JP4137198B2 (ja) * 1997-09-06 2008-08-20 キヤノンアネルバ株式会社 スパッタリング装置
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JP2007224343A (ja) * 2006-02-22 2007-09-06 Victor Co Of Japan Ltd マグネトロンスパッタリング装置
DE202009018428U1 (de) * 2008-04-28 2011-09-28 Cemecon Ag Vorrichtung zum Vorbehandeln und Beschichten von Körpern
TW201516167A (zh) * 2013-10-22 2015-05-01 Semiconductor Energy Lab 氧化物半導體膜之製作方法
TWI643969B (zh) * 2013-12-27 2018-12-11 日商半導體能源研究所股份有限公司 氧化物半導體的製造方法
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JPH07173626A (ja) * 1993-12-20 1995-07-11 Casio Comput Co Ltd スパッタ装置
JPH07233473A (ja) * 1994-02-22 1995-09-05 Hitachi Ltd マグネトロンスパッタ装置
JPH1126230A (ja) * 1997-05-06 1999-01-29 Anelva Corp スパッタリング装置の磁界発生装置
KR20110090133A (ko) * 2010-02-02 2011-08-10 위순임 처리효율이 향상된 스퍼터 장치
KR20110115794A (ko) * 2010-04-16 2011-10-24 김창수 마그네트론 스퍼터링장치

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TWI768014B (zh) 2022-06-21
JP2020515709A (ja) 2020-05-28
CN110140191A (zh) 2019-08-16
TW201837954A (zh) 2018-10-16
CN110140191B (zh) 2022-10-14
KR101885123B1 (ko) 2018-08-03

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