WO2019101319A1 - Substrate carrier for supporting a substrate, mask chucking apparatus, vacuum processing system, and method of operating a substrate carrier - Google Patents

Substrate carrier for supporting a substrate, mask chucking apparatus, vacuum processing system, and method of operating a substrate carrier Download PDF

Info

Publication number
WO2019101319A1
WO2019101319A1 PCT/EP2017/080238 EP2017080238W WO2019101319A1 WO 2019101319 A1 WO2019101319 A1 WO 2019101319A1 EP 2017080238 W EP2017080238 W EP 2017080238W WO 2019101319 A1 WO2019101319 A1 WO 2019101319A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
mask
magnet
substrate carrier
carrier
Prior art date
Application number
PCT/EP2017/080238
Other languages
French (fr)
Inventor
Andreas Sauer
Michael Rainer SCHULTHEIS
Wolfgang Buschbeck
Andreas Lopp
Matthias HEYMANNS
Sebastian Gunther ZANG
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR1020197005082A priority Critical patent/KR20190062380A/en
Priority to CN201780051374.8A priority patent/CN110073481A/en
Priority to PCT/EP2017/080238 priority patent/WO2019101319A1/en
Priority to JP2019504983A priority patent/JP2020503663A/en
Publication of WO2019101319A1 publication Critical patent/WO2019101319A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • Embodiments of the present disclosure relate to apparatuses and methods for fixing and supporting a mask on a substrate carrier.
  • embodiments of the present disclosure relate to apparatuses and methods for fixing and supporting a mask on a substrate carrier in a processing system having a vacuum process chamber, particularly for OLED manufacturing.
  • OLEDs organic light-emitting diodes
  • OLEDs are a special type of light-emitting diode in which the emissive layer comprises a thin-film of certain organic compounds.
  • Organic light emitting diodes (OLEDs) are used in the manufacture of television screens, computer monitors, mobile phones, other hand-held devices, etc., for displaying information.
  • OLEDs can also be used for general space illumination.
  • the range of colors, brightness and viewing angles possible with OLED displays is greater than that of traditional LCD displays because OLED pixels directly emit light and do not involve a back light. Therefore, the energy consumption of OLED displays is considerably less than that of traditional LCD displays. Further, the fact that OLEDs can be manufactured onto flexible substrates results in further applications.
  • the functionality of an OLED depends on the coating thickness of the organic material. This thickness has to be within a predetermined range.
  • OLEDs there are technical challenges with respect to the deposition of evaporated materials in order to achieve high resolution OLED devices.
  • accurate and smooth transportation of substrate carriers and masks through a processing system remains challenging.
  • accurately fixing and supporting a mask on a substrate carrier for achieving high quality processing results remains challenging, e.g. for production of high resolution OLED devices.
  • a substrate carrier for supporting a substrate and a mask in a vacuum chamber.
  • the substrate carrier comprises an electropermanent magnet element, wherein the electropermanent magnet element is configured for applying a magnetic holding force to the mask.
  • a vacuum processing system comprises a vacuum processing chamber having at least a substrate carrier according to other aspects of the present disclosure.
  • a method for operating a substrate carrier for supporting a substrate and a mask carrier, the substrate carrier including an electropermanent magnet element includes providing a mask carrier over a surface of the substrate being supported by the substrate carrier, switching the electropermanent magnet element from a non- magnetized state to a magnetized state by applying an electrical current of an electromagnet, and removing the electrical current.
  • Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner.
  • embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus.
  • FIG. la shows a schematic side view of a substrate carrier according to embodiments described herein;
  • FIG. lb shows a schematic side view of a substrate carrier according to further embodiments described herein;
  • FIG. 2a shows a schematic side view of an electropermanent magnet assembly of a substrate carrier according to embodiments described herein;
  • FIG. 2b shows a schematic side view of an electropermanent magnet assembly of a substrate carrier according to embodiments described herein;
  • FIG. 3 shows a schematic side view of an electropermanent magnet assembly of a substrate carrier according to embodiments described herein
  • FIG. 4 shows a schematic side view of a vacuum processing system according to embodiments described herein
  • FIG. 5 shows a flow chart illustrating a method for operating a substrate carrier and a mask carrier according to embodiments described herein.
  • Figs la and lb show schematic side views of a substrate carrier 100 according to embodiments described herein.
  • the substrate carrier 100 is configured for supporting a substrate 101 and a mask 401 in a vacuum chamber, comprising an electropermanent magnet element 200.
  • the electropermanent magnet element 200 is configured for applying a magnetic holding force to the mask 401.
  • Electropermanent magnet element 200 is shown in an unmagnetized state in Fig. la wherein no magnetic holding force is applied to mask 401, and in a magnetized state in Fig. lb wherein a magnetic holding force is applied to mask 401.
  • a“substrate carrier” is to be understood as a carrier which is configured for holding a substrate as described herein, particularly a large area substrate.
  • the substrate held or supported by the substrate carrier includes a front surface and a back surface, wherein the front surface is a surface of the substrate being processed, for example on which a material layer is to be deposited.
  • the term“substrate” as used herein may particularly embrace substantially inflexible substrates, e.g., glass plates and metal plates. However, the present disclosure is not limited thereto and the term“substrate” can also embrace flexible substrates such as a web or a foil.
  • the term“substantially inflexible” is understood to distinguish over“flexible”. Specifically, a substantially inflexible substrate can have a certain degree of flexibility, e.g. a glass plate having a thickness of 0.9 mm or below, such as 0.5 or below, wherein the flexibility of the substantially inflexible substrate is small in comparison to the flexible substrates.
  • the substrate may be made of any material suitable for material deposition.
  • the substrate may be made of a material selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials, carbon fiber materials or any other material or combination of materials which can be coated by a deposition process.
  • glass for instance soda-lime glass, borosilicate glass etc.
  • metal for instance soda-lime glass, borosilicate glass etc.
  • polymer for instance polysilicate glass, metal, polymer, ceramic, compound materials, carbon fiber materials or any other material or combination of materials which can be coated by a deposition process.
  • the substrate can be a “large area substrate” and may be used for display manufacturing.
  • a“large area substrate” can have a main surface with an area of 0.5 m 2 or larger, particularly of 1 m 2 or larger.
  • a large area substrate can be GEN 4.5, which corresponds to about 0.67 m 2 of substrate (0.73x0.92m), GEN 5, which corresponds to about 1.4 m 2 of substrate (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m 2 of substrate (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7 m 2 of substrate (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m 2 of substrate (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
  • Electropermanent magnet element 200 is configured for applying a magnetic holding force to mask 401.
  • the magnetic holding force acting on mask 401 causes mask 401 to be drawn towards the surface of the substrate 101 such that mask 401 may make contact with the surface of the substrate 101 as shown in Fig. lb.
  • the magnetic holding force may be sufficient enough such that mask 401 is held in a fixed position relative to the substrate 101. Holding mask 401 in a fixed position allows for an improvement in quality of the layers deposited on the substrate 101 during processing, as any movement of mask 401 during processing stages, between processing stages or during transport of substrate carrier 100 is suppressed.
  • materials deposition with a pattern mask such as a fine metal mask (FMM) can be provided on large area substrates. Accordingly, the size of the area on which material is to be deposited is e.g. 1 m 2 or above.
  • a pattern mask e.g. for pixel generation of a display, provides a pattern in the micron range. Positioning tolerance of openings of the pattern mask in the micron range can be challenging over large areas. This is particularly true for vertically or essentially vertically oriented substrates. Even the gravity acting on the pattern mask and/or a respective frame of the pattern mask may deteriorate positioning accuracy of the pattern mask.
  • an improved chucking arrangement for chucking the pattern mask to the substrate is particularly beneficial for vertical (essentially vertical) substrate processing.
  • Substrate carrier 100 is configured for supporting substrate 101 and mask 401 in a vacuum chamber.
  • a vacuum chamber may be any closed chamber wherein the interior of the vacuum chamber is maintained at a lower pressure than the ambient pressure outside the vacuum chamber.
  • the vacuum chamber may be a processing chamber wherein substrate 101 is processed. Such a processing operation may comprise deposition of a material onto the surface of substrate 101, etching of a material layer of substrate 101, application of heat to substrate 101 or cooling of substrate 101.
  • the vacuum chamber may alternatively be a transport chamber or transfer chamber, wherein substrate 101 is transported or transferred from one vacuum chamber to another.
  • the vacuum chamber may alternatively be a load lock chamber capable of transferring substrate 101 between one vacuum chamber maintained at a pressure and another vacuum chamber maintained at a different pressure.
  • Substrate carrier 100 is configured for supporting mask 401.
  • Mask 401 is provided on the surface of substrate 101.
  • Mask 401 may include a plurality of apertures which define a masking pattern for selective deposition of a material on the surface of substrate 101.
  • Mask 401 may include any structure which allows for providing a plurality of apertures to define a masking pattern.
  • mask 401 may include a flat plate element having apertures created therein through an etching process or a machining process.
  • Mask 401 may be a fine metal mask (FMM).
  • Mask 401 may include at least an element including a magnetically attractable material, e.g. a metal, allowing for a magnetic holding force to be applied to mask 401 by electropermanent magnet element 200, which has the effect of holding mask 401 in a fixed position on the surface of substrate 101.
  • the structural elements of mask 401 may all include magnetically attractable material, or only some of the structural elements of mask 401 may include magnetically attractable material.
  • Mask 401 may be an edge exclusion mask or a shadow mask.
  • An edge exclusion mask is a mask which is configured for masking one or more edge regions of the substrate, such that no material is deposited on the one or more edge regions during the coating of substrate 101.
  • a shadow mask is a mask configured for masking a plurality of features which are to be deposited on substrate 101.
  • the shadow mask can include a plurality of small openings, e.g. a grid of small openings.
  • the plurality of small openings can correspond to pixels of a display.
  • Mask 401 may be mounted on a mask carrier 400.
  • a“mask carrier” is to be understood as a carrier which is configured for holding a mask.
  • Mask 401 may comprise a thin plate element having a plurality of apertures which define the masking pattern for selective deposition. As such, mask 401 may have insufficient rigidity to be effectively mounted and demounted to substrate carrier 100.
  • Mask carrier 400 including mask carrier frame 402, may surround and hold mask 401 at a circumferential edge of mask 401, and may provide sufficient rigidity allowing for mask 401 to be mounted and demounted from substrate carrier 100.
  • Mask carrier 400 may include a magnetically attractable material, e.g. a metal, so that mask carrier 400 may also be attracted towards substrate support surface 304 via a magnetic holding force generated by electropermanent magnet element 200.
  • Electropermanent magnet element 200 and electrostatic chuck 300 may be integrated into a common carrier body of substrate carrier 100.
  • electrostatic chuck 300 may be embedded in a first inner volume of the carrier body, and electropermanent magnet element 200 may be embedded in a second inner volume of the carrier body.
  • electrostatic chuck 300 and electropermanent magnet element 200 may be firmly connected to the same carrier body, e.g. by attaching or fixing both electrostatic chuck 300 and electropermanent magnet element 200 to the same carrier body, so that electrostatic chuck 300 and electropermanent magnet element 200 can be transported and moved as a single unit.
  • the carrier body may be formed as a unitary plate structure in which both electrostatic chuck 300 and electropermanent magnet element 200 are arranged.
  • the electrostatic chuck 300 and electropermanent magnet element 200 may be integrated with each other.
  • Electrostatic chuck 300 may be arranged between electropermanent magnet element 200 and substrate 101, as exemplarily shown in Figs la and lb.
  • electropermanent magnet element 200 may be arranged between electrostatic chuck 300 and substrate 101.
  • FIGS la and lb exemplarily show the electropermanent magnet element
  • the electropermanent magnet element 200 may be a separate unit provided adjacent to a substrate carrier, e.g. in a position at which the mask is pulled towards a substrate.
  • a mask chucking apparatus in a vacuum chamber can be provided.
  • the apparatus includes an electropermanent magnet element having a first permanent magnet, at least a second permanent magnet; and a controlling magnet assembly having at least one controlling magnet and an electromagnet adjacent to the at least one controlling magnet.
  • the mask chucking apparatus can be provided in the vacuum chamber at a position to have the mask attracted to a substrate on a substrate carrier.
  • Substrate carrier 100 may be configured for supporting substrate 101 and mask 401 in a non-horizontal orientation, particularly in an essentially vertical orientation.
  • An“essentially vertical orientation” as used herein may be understood as an orientation wherein an angle between a main surface of substrate carrier 100 and the gravity vector is between +10° and -10°, particularly between 5° and -5°.
  • the orientation of substrate carrier 100 may not be (exactly) vertical during transport and/or during deposition, but slightly inclined with respect to the vertical axis, e.g. by an inclination angle between 0° and -5°, particularly between -1° and -5°.
  • a negative angle refers to an orientation of substrate carrier 100 wherein substrate carrier 100 is inclined downward, i.e.
  • the substrate surface to be processed is facing downward.
  • a deviation from the gravity vector of orientations of mask 401 and substrate 101 during the deposition may be beneficial and may result in a more stable deposition process, or a down-facing orientation might be suitable for reducing particles on the substrate during deposition.
  • a down-facing orientation might be suitable for reducing particles on the substrate during deposition.
  • an exactly vertical orientation (+/-l°) of the mask device during transport and/or during deposition is possible.
  • a larger angle between the gravity vector and substrate carrier 100 during transport and/or during deposition is also possible.
  • An angle between 0° and +/-30° may be understood as a“non-horizontal orientation” as used herein. Transporting substrate carrier 100 in a non-horizontal orientation may save space and allow for smaller vacuum chambers.
  • Substrate carrier 100 may further include power supply element 104 configured for providing power to electropermanent magnet element 200.
  • Power supply element 104 may be an external power supply that is not attached to or integrated into substrate carrier 100. Alternatively, power supply element 104 may be attached to or integrated into substrate carrier 100.
  • Power supply element 104 may generate one or more electric pulses, e.g. one or more current pulses, which may be suitable for switching electropermanent magnet element 200 between a magnetized state and a non-magnetized state, as exemplarily described in more detail with respect to Figs. 2a and 2b. For example, 10 or more pulses can be provided.
  • the magnetization of the at least one controlling magnet 204 can be varied and/or adjusted. The magnetization influences the magnetic holding force acting on the mask.
  • the magnetic force can be adjusted to be zero in the plane of the substrate and/or the mask. Magnetic forces of the various elements cancel out each other or the magnetic flux lines are guided away from the substrate or the mask.
  • power supply element 104 may have the advantage of only being able to supply power to electropermanent magnet element 200 at designated points in a vacuum processing system due to the bistable properties of electropermanent magnet element 200.
  • power supply element 104 may be provided at a mask mounting station in a vacuum processing system, such that power may only be provided to electropermanent magnet element 200 by power supply element 104 at the mask mounting station.
  • substrate carrier 100 further comprises an electrostatic chuck 300 comprising a substrate support surface 304.
  • Electrostatic chuck 300 includes insulating layers 301, 303 and electrode layer 302. A surface of insulating layers 301, 303 may form substrate support surface 304.
  • Electrostatic chuck 300 (also referred to herein as“e-chuck”) may be used to attract the substrate 101 to substrate support surface 304 of substrate carrier 100 during substrate processing.
  • substrate 101 may include a material, e.g. a dielectric material that can be pulled toward substrate support surface 304 by electrostatic forces such that substrate 101 can be pulled into direct contact with substrate support surface 304. Holding of substrate 101 can also be enabled during high-temperature processes, coating processes and plasma processes also in a vacuum environment.
  • Electrostatic chuck 300 includes insulating layers 301, 303.
  • Insulating layers 301, 303 may be fabricated from a dielectric material, e.g. a high thermal conductivity dielectric material such as pyrolytic boron nitride, aluminum nitride, silicon nitride, alumina or an equivalent material, e.g. a thermally resistant polymer based material such as a polyimide based material or other organic materials.
  • the electrodes of the electrostatic chuck may be connected to a power supply, e.g. a voltage source, respectively, which may apply a predetermined voltage to the electrodes to generate a predetermined electrostatic grip force.
  • Electrostatic chuck 300 includes electrode layer 302 including a plurality of electrodes.
  • the plurality of electrodes may be connected to power supply element 105, e.g. a voltage source, which may apply a predetermined voltage to the electrodes to generate a predetermined electrostatic charge at substrate support surface 304, which may be adjustable.
  • Substrate carrier 100 may further include substrate support surface 304.
  • Substrate support surface 304 may be a surface of electrostatic chuck 300, or may be a surface of another element provided over electrostatic chuck 300. Particularly, substrate support surface 304 may be a surface of one of insulating layers 301, 303.
  • Substrate support surface 304 is configured for supporting substrate 101, and comprises a surface which supports substrate 101 over the entire surface of substrate 101. Substrate support surface 304 may have an area the same or greater than the area of substrate 101.
  • Substrate support surface 304 may be electrostatically charged by electrostatic chuck 300.
  • Electrostatically charging substrate support surface 304 has the effect of attracting substrate 101 to substrate support surface 304 such that substrate 101 is electrostatically chucked to substrate carrier 100.
  • Substrate support surface 304 may be a flat surface such that substrate support surface 304 supports substrate 101 over its entire area. Alternatively, substrate support surface 304 may have a non-flat surface. Particularly, substrate support surface 304 may have a surface shaped to conform to the shape of substrate 101.
  • Substrate carrier 100 may further include power supply element 105 configured for providing power to electrostatic chuck 300.
  • Power supply element 105 may be an external power supply that is not attached to or integrated into substrate carrier 100. Alternatively, power supply element 105 may be attached to or integrated into substrate carrier 100. Power supply element 105 may generate an electric pulse, e.g. a current pulse, which may be suitable for switching electropermanent magnet element 200 between a magnetized state and a non-magnetized state.
  • Power supply element 105 may be the same element as power supply element 104, which provides power to electropermanent magnet element 200, such that a single power supply element separately and independently provides power to both electropermanent magnet element 200 and electrostatic chuck 300. Such a consolidated single power supply element may be integrated into substrate carrier 100, or may be located external to substrate carrier 100.
  • Electrostatic chuck 300 may be configured as a monopolar chuck, as a bipolar chuck or as a multi-pole chuck.
  • A“monopolar chuck” may be understood as an electrostatic chuck including one or more electrodes connectable to a power supply, e.g. a high voltage source.
  • Power supply element 104 is configured to provide an electric voltage of a single polarity to plurality of electrodes. For example, a positive voltage may be applied to the plurality of electrodes of electrostatic chuck 300 such that a negative charge is induced on substrate support surface 304 of substrate carrier 100. Alternatively, a negative voltage may be applied to the plurality of electrodes such that a positive charge is induced on substrate support surface 304 of substrate carrier 100.
  • A“bipolar chuck assembly” as used herein may be understood as an electrostatic chuck including at least one first electrode and at least one second electrode connectable to the power supply, e.g. a high voltage source.
  • Power supply element 104 is configured to provide an electric voltage of a first polarity to the first electrodes and an electric voltage of a second polarity to the second electrodes. For example, a negative voltage may be applied to the first electrodes, and a positive voltage may be applied to the second electrodes, or vice versa. Accordingly, corresponding negatively charged regions and corresponding positively charged regions may be generated at substrate support surface 304 by electrostatic induction.
  • a plurality of electrodes may be provided which may be independently controllable.
  • Electrostatic chuck 300 may include at least one first electrode and at least one second electrode, wherein a positive voltage (+) is applied to the first electrode and a negative voltage (-) is applied to the second electrode via power supply element 104, e.g. a high voltage source.
  • the at least one first electrode may be interleaved with the at least one second electrode, in order to increase the grip force provided by electrostatic chuck 300.
  • first electrodes and second electrodes may be alternately arranged.
  • electrostatic chuck 300 may include a plurality of wires which are positively and negatively charged in an alternate way.
  • the electropermanent magnet element 200 is switchable between a magnetized state and a non-magnetized state by applying an electrical current.
  • a power supply element 104 can be provided for supplying an electrical current to the electropermanent magnet element 200. Applying an electrical current causes the magnetic field of the electropermanent magnet element 200 to be reconfigured, subsequently altering the magnetic force applied to mask carrier 400.
  • electropermanent magnet element 200 comprises a first permanent magnet 201, at least a second permanent magnet 202, and a controlling magnet assembly having at least one controlling magnet 204, and an electromagnet 205 adjacent to the at least one controlling magnet 204.
  • Electropermanent magnet element 200 as shown in Fig. 2a is in a non-magnetized state
  • electropermanent magnet element 200 as shown in Fig. 2b is in a magnetized state, enabling electropermanent magnet element 200 to apply a magnetic force to mask 401, accurately fixing mask 401 in place on substrate 101.
  • Electropermanent magnet element 200 includes a first permanent magnet
  • First permanent magnet 201 having a first polarity 20 la and a second polarity 20 lb, and at least a second permanent magnet 202 having a first polarity 202a and a second polarity 202b.
  • First permanent magnet 201 and the at least a second permanent magnet 202 are arranged such their adjacent polarities are the same.
  • adjacent second polarities 20 lb, 202b of first permanent magnet 201 and the at least a second permanent magnet 202 may both be configured as north polarity.
  • the clamping magnet assembly of electropermanent magnet element 200 is configured to generate the magnetic field required to apply a magnetic holding force to mask 401, in a sense“clamping” mask 401 to substrate 101.
  • the controlling magnet assembly includes at least one controlling magnet 204 having a first polarity 204a and a second polarity 204b.
  • the at least one controlling magnet 204 may generate a magnetic field sufficient to control the state of the electropermanent magnet element 200.
  • the magnetic field generated by the at least one controlling magnet 204 configures the electropermanent magnet element 200 to be in a non-magnetized state, as exemplarily shown in Fig. 2a.
  • the magnetic field generated by the at least one controlling magnet 204 configures the electropermanent magnet element 200 to be in a magnetized state such that a magnetic holding force is applied to mask 401, as exemplarily shown in Fig. 2b.
  • Electromagnet 205 may be positioned adjacent to controlling magnet 204. Electromagnet 205 may substantially enclose the at least one controlling magnet 204. Electromagnet 205 is configured to switch the polarity of the at least one controlling magnet 204. Electromagnet 205 may include at least one coil, or at least one winding of an electrically conductive wire. Inducing an electrical current in the at least one coil of electromagnet 205 generates a magnetic field, e.g., a reversing magnetic field, within the electromagnet 205.
  • a magnetic field e.g., a reversing magnetic field
  • the reversing magnetic field within electromagnet 205 exceeds the intrinsic coercivity, or resistance to being demagnetized, of the at least one controlling magnet 204, the reversing magnetic field causes the polarity of the at least one controlling magnet 204 to switch from a first polarity to a second polarity.
  • Applying a first electrical current causes the electropermanent magnet element 200 to switch from a non-magnetized state to a magnetized state, while applying a second electrical current different to the first electrical current causes the electropermanent magnet element 200 to switch from a magnetized state to a non- magnetized state.
  • the first electrical current may be applied in a forward direction, and the second electrical current may be applied in a reverse direction.
  • the electrical current applied to switch the electropermanent magnet element 200 between a non-magnetized state to a magnetized state may be provided, wherein a power of 1 kW or more, such as 8 kW or more is provided.
  • the electrical current may be applied for a duration of less than 3 seconds, particularly less than 1 second, more particularly between 0.3 seconds and 1 second.
  • the electropermanent magnet element 200 is configured to remain in a magnetized state or a non-magnetized state after removal of the electrical current. After applying an electrical current to the electropermanent magnet element 200 and subsequently removing the electrical current, the configuration of the magnetic field generated by electropermanent magnet element 200 remains stable.
  • the electropermanent magnet element 200 exhibits bistable behavior, with a stable non-magnetized state and a stable magnetized state. Configuring the electropermanent magnet element 200 to be bistable allows for a mask carrier 400 to remain fixed to substrate carrier 100 even in an unpowered state, enabling the substrate carrier 100 to accurately fix mask carrier 400 in place.
  • the at least two permanent magnets 201, 202 and the at least one controlling magnet 204 include specific magnetic alloys to obtain the desired magnetic properties.
  • the material of first permanent magnet 201 and the at least a second permanent magnet 202 is to be suitable for generating high magnetic fields to effectively fix mask 401 in place. Additionally or alternatively, the intrinsic coercivity of first permanent magnet 201 and the at least a second permanent magnet 202 is higher than the magnetic field generated by the at least one controlling magnet 204.
  • the at least one controlling magnet 204 does not generate a strong magnetic field to switch the polarity of the at least two permanent magnets 201, 202. In this sense, the at least two permanent magnets 201, 202 can be referred to as“hard” magnets, while the at least one controlling magnet 204 can be referred to as a“soft” magnet.
  • electropermanent magnet element 200 further includes at least one core element 203 disposed between the first permanent magnet 201 and the at least one second permanent magnet 202, wherein the at least one core element 203 comprises a ferromagnetic material.
  • the at least one core element 203 may comprise a ferrous material.
  • the at least one core element 203 may comprise carbon steel, ferritic stainless steel or martensitic stainless steel.
  • the strength of the magnetic field generated by the electropermanent magnet element 200 is enhanced.
  • An enhanced magnetic holding force is applied to mask 401 to hold mask 401 in a fixed position on the surface of substrate 101.
  • the at least one core element 203 comprises a ferromagnetic material
  • the magnetic field generated by the electropermanent magnet element 200 is more evenly distributed across the entire surface of the electropermanent magnet element 200, allowing the magnetic holding force to be applied to mask 401 more evenly.
  • electropermanent magnet element 200 may include a plurality of permanent magnet elements 201, 202, a plurality of controlling magnets 204, a plurality of core elements 203 and a plurality of electromagnets 205.
  • Permanent magnet elements 201, 202 are arranged such that the polarity of one permanent magnet element 201, 202 facing a surface of an adjacent core element 203 is the same as the polarity of the next permanent magnet element 201, 202 facing another surface of the same adjacent core element 203.
  • the electropermanent magnet element 200 shown in Fig. 3 is in a magnetized state wherein a magnetic holding force is applied to mask 401.
  • An electropermanent magnet element 200 having multiple permanent magnet elements 201, 202 and a plurality of core elements 203 allows for the magnetic field generated by electropermanent magnet element 200 to be more evenly distributed over the substrate support surface 304. Further, the magnetic field generated may have a higher strength than an arrangement comprising only one each of permanent magnet elements 201, 202 and core element 203.
  • the area defined by first permanent magnet 201, at least one second permanent magnet 202 and at least one core element 203 is at least 80% of the area of substrate 101.
  • the area defined by first permanent magnet 201, at least one second permanent magnet 202 and at least one core element 203 may be called the effective area of electropermanent magnet element 200.
  • the effective area of electropermanent magnet element 200 is the area in which the magnetic field is generated by electropermanent magnet element 200, and hence the area in which the magnetic holding force is applied to mask 401.
  • the effective area of electropermanent magnet element 200 may be smaller than the area of substrate 101. For example, the effective area may be at least 80% of the area of substrate 101. When the effective area is smaller than the area of substrate 101, electropermanent magnet element 200 applies a magnetic holding force to mask 401 in a smaller area than substrate 101. This feature has the effect of preventing mask 401 from being pulled around the edges of substrate 101, which can prevent damage to mask 401 or the edges of substrate 101.
  • the effective area of electropermanent magnet element 200 may be larger than the area of substrate 101.
  • the effective area may be up to 110% of the area of substrate 101, particularly up to 130% of the area of substrate 101.
  • the magnetic field generated by electropermanent magnet element 200 may also apply a magnetic holding force to elements of mask 401 outside of the area of substrate 101.
  • electropermanent magnet element 200 may also apply a magnetic holding force to mask carrier 400, which may have the effect of chucking mask carrier 400 to substrate carrier 100 without employing an additional chucking apparatus.
  • first permanent magnet 201 and the at least one second permanent magnet 202 include a rare-earth metal.
  • first permanent magnet 201 and the at least one second permanent magnet 202 may include a neodymium alloy.
  • Permanent magnets 201, 202 comprising neodymium alloy can be magnetized to generate a high magnetic field and have a high coercivity, or resistance to demagnetization. Having a high coercivity allows the at least two permanent magnets 201, 202 to resist being demagnetized by the at least one controlling magnet 204.
  • the at least one controlling magnet 204 includes an aluminium nickel cobalt (AlNiCo) alloy.
  • AlNiCo aluminium nickel cobalt
  • the at least one controlling magnet 204 can be magnetized to generate a strong magnetic field to switch electropermanent magnet element 200 between a non-magnetized state and a magnetized state.
  • AlNiCo magnets have a high coercivity, or resistance to demagnetization.
  • AlNiCo magnets have a coercivity that is lower than that of the neodymium alloy included in permanent magnets 201, 202.
  • a current may be applied to electromagnet 205 to generate a reversing magnetic field to switch the polarity of the at least one controlling magnet 204 including AlNiCo alloy.
  • FIG. 4 shows a schematic side view of a vacuum processing system 500 according to a further aspect described herein.
  • vacuum processing system 500 comprises vacuum processing chamber 501 having at least a substrate carrier 100 according to the embodiments described herein.
  • Vacuum processing chamber 501 may include one or more processing apparatus 502 arranged therein.
  • the one or more processing apparatus 502 may be operated to perform one or more processing operations within vacuum processing chamber 501.
  • the one or more processing apparatus 502 may include a deposition apparatus, a heat treatment apparatus, a cooling apparatus or any other apparatus which performs a processing operation.
  • the deposition apparatus may be an evaporation device including a crucible for housing a material that is to be evaporated and at least one distribution pipe for guiding the evaporated material toward a plurality of openings in the distribution pipe, which are directed towards substrate 101.
  • Processing apparatus 502 may be provided on a moveable support so that the processing apparatus 502 may be moved past the substrate 101 during a processing operation.
  • the deposition apparatus may be moved past the substrate 101 such that the deposited material is distributed across the entire surface of substrate 101.
  • Vacuum processing system 500 includes at least a substrate carrier 100 according to embodiments described herein.
  • Substrate carrier 100 may be transported into, out of or through vacuum processing system 500.
  • Substrate carrier 100 may be arranged such that an angle between the vertical direction and substrate 101 is between 0° and -10° when substrate 101 is held on substrate support surface 304 of substrate carrier 100.
  • substrate 101 may be arranged such that the surface to be coated is slightly facing downward during deposition. Such an arrangement has the effect of reducing the amount of particles which settle on the surface of substrate 101, thereby improving the quality of the layers of deposited material.
  • processing apparatus may be arranged parallel to substrate 101.
  • Substrate 101 is attracted to substrate support surface 304 of substrate carrier 100 with electrostatic chuck 300, and mask 401 is attracted toward substrate support surface 304 and the surface of substrate 101 with electropermanent magnet element 200.
  • Vacuum processing system 500 may include further vacuum processing chambers 501 such that vacuum processing system 500 includes a plurality of vacuum processing chambers 501.
  • the plurality of vacuum processing chambers 501 may be arranged sequentially such that a first processing operation is performed in a first processing chamber, substrate carrier 100 is transported to a second processing chamber, a second processing operation is performed in the second processing chamber, and so on in subsequent processing chambers.
  • the plurality of vacuum processing chambers 501 may be connected such that the vacuum environment is common to all or some vacuum processing chambers, or vacuum processing chambers 501 may include locking devices to maintain different vacuum environments from one vacuum processing chamber to the next.
  • Vacuum processing system 500 may further include a track configured for contactless transportation.
  • a “track configured for contactless transportation” is to be understood as a track which is configured for contactless transportation of a carrier, particularly a substrate carrier or a mask carrier.
  • the term“contactless” can be understood in the sense that the weight of the carrier, e.g. of the substrate carrier or mask carrier, is not held by a mechanical contact or mechanical forces, but is held by a magnetic force.
  • the carrier can be held in a levitating or floating state using magnetic forces instead of mechanical forces. For example, in some implementations, there can be no mechanical contact between the carrier and the transportation track, particularly during levitation, movement and positioning of the substrate carrier and/or mask carrier.
  • the contactless transport system may include substrate carrier support rail 505 and mask carrier support rail 506 configured for lifting at least a part of the weight of substrate carrier 100 and mask carrier 400, respectively, using attractive magnetic forces.
  • the contactless transport system may further include substrate carrier driving rail 503 and mask carrier driving rail 504.
  • the substrate carrier driving rail 503 and the mask carrier driving rail 504 may be configured a translational movement of substrate carrier 100 and mask carrier 400, respectively, using magnetic forces.
  • Support rails 505, 506 and driving rails 503, 504 are arranged and configured for supporting and/or transporting substrate carrier 100 and mask carrier 400 in a vertical or essentially vertical orientation.
  • Substrate carrier driving rail 503 and mask carrier driving rail 504 may include linear actuating elements configured for magnetically transporting mask carrier 400 and substrate carrier 100, respectively.
  • the linear actuating elements may be a linear motor.
  • Driving rails 503, 504 allow for contactless transport of substrate carrier 100 and mask carrier 400 into, out of or through vacuum processing system 500.
  • a contactless transport system has the advantage of zero friction transport of substrate carrier 100 and mask carrier 400, which reduces particle generation. A reduction in generated particles through transport of substrate carrier 100 and mask carrier 400 results in improved quality of material layers deposited on the surface of substrate 101.
  • Vacuum processing system 500 may further include at least a load lock chamber.
  • the load lock chamber allows for substrate carrier 100 to be transported from an ambient environment (e.g. from a non-vacuum) to a vacuum environment in a vacuum processing chamber 501.
  • the load lock chamber may include a vacuum pump for generating a vacuum inside the load lock chamber, and may further include at least a valve for venting the load lock chamber to the ambient environment.
  • Vacuum processing system 500 may further include a mask alignment apparatus. During mounting of mask carrier 400 supporting mask 401 to substrate carrier 100, the proper alignment of mask 401 with respect to substrate 101 may be performed.
  • the mask alignment apparatus may include any apparatus configured for translating or rotating mask carrier 400 in at least a direction with respect to substrate 101.
  • the mask alignment apparatus may be provided in a vacuum processing chamber 501, or may be provided in a separate vacuum chamber specifically for mounting and aligning mask carrier 400 supporting mask 401.
  • substrate carrier 100 is a magnetic chuck for chucking a mask 401 to a substrate 101, wherein the magnetic chuck comprises a chucking surface 304 and the electropermanent magnet element 200 is provided behind the chucking surface 304.
  • Fig. 5 is a flow diagram for illustrating a method for operating a substrate carrier according to a further aspect described herein.
  • the method 600 beginning at block 601, comprises providing a mask carrier over a surface of the substrate being supported by the substrate carrier in block 602, switching the electropermanent magnet element from a non-magnetized state to a magnetized state by applying an electrical current of an electromagnet in block 603, and removing the electrical current in block 604, the method concluding in box 605.
  • a mask carrier is provided over a surface of substrate 101 being supported by substrate carrier 100.
  • Substrate 101 may be attracted to substrate support surface 304 by electrostatic force generated by electrostatic chuck 300 such that substrate 101 is held in a fixed position.
  • a mask carrier is then provided over the surface of substrate 101 such that mask 401 having a plurality of apertures defines a plurality of deposition areas for depositing one or more layers of material thereon.
  • electropermanent magnet element 200 is switched from a non-magnetized state to a magnetized state.
  • the application of an electrical current of electromagnet 205 generates a magnetic field in electromagnet 205 which has the effect of switching the polarity of the at least one controlling magnet 204.
  • Switching the polarity of the at least one controlling magnet 204 causes electropermanent magnet element 200 to switch from a non-magnetized state to a magnetized state.
  • the magnetic field generated by permanent magnets 201, 202 apply a magnetic holding force to mask 401 such that mask 401 is attracted to substrate support surface 304 and the surface of substrate 101, fixing mask 401 in place.
  • the electrical current of electromagnet 205 is removed.
  • electropermanent magnet element 200 Due to the bistable properties of electropermanent magnet element 200, the removal of the electrical current allows the polarity of the at least one controlling magnet 204 to remain in the switched polarity, subsequently allowing electropermanent magnet element 200 to remain in a magnetized state. [0086] After removing the electrical current of electromagnet 205, the mask carrier is magnetically fixed in place on the surface of substrate 101, and substrate carrier 100 may be transported through a vacuum processing system for processing. Electropermanent magnet element 200, having bistable properties, remains in a magnetized state and will continue to apply a magnetic holding force to mask 401, fixing mask 401 in place. Movement of mask 401 with respect to substrate 101 is hence suppressed, even during transport of substrate carrier 100, which leads to higher quality and reliability of deposited layers.
  • Method 600 may be performed in the order specified above for mounting a mask carrier to substrate carrier 100.
  • the applied electrical current of electromagnet 205 may be applied in a forward direction such that electropermanent magnet element 200 is switched from a non-magnetized state to a magnetized state, applying a magnetic holding force to fix mask 401 in place.
  • method 600 may also be performed in the reverse order for unmounting a mask carrier from substrate carrier 100.
  • the applied electrical current of electromagnet 205 may be applied in a reverse direction such that electropermanent magnet element 200 is switched from a magnetized state to a non-magnetized state, releasing the magnetic holding force applied to mask 401 allowing the mask carrier to be unmounted.
  • method 600 further includes aligning the mask carrier relative to the substrate carrier prior to switching the electropermanent magnet element in block 602a.
  • Aligning the mask carrier may include operating a mask alignment apparatus such that the mask carrier is translated and/or rotated into a predetermined position with respect to the substrate carrier 100 and/or the substrate 101. Precise alignment of the mask carrier increases the reliability and quality of deposited layers on the surface of substrate 101.
  • the alignment of the mask carrier may include a first rough alignment and a subsequent fine alignment to ensure that the mask deviates from the substrate in an up-down direction and/or in a left-right direction by 10 pm or less, particularly 3 pm or less, respectively.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present disclosure provides a substrate carrier for supporting a substrate in a vacuum chamber, a mask chucking apparatus, a vacuum processing system and a method for operating an electropermanent magnet element according to the independent claims are provided. According to an aspect of the present disclosure, a substrate carrier for supporting a substrate in a vacuum chamber is provided. The substrate carrier comprises an electropermanent magnet element, wherein the electropermanent magnet element is configured for applying a magnetic holding force to a mask. According to another aspect of the present disclosure, a vacuum processing system is provided. The vacuum processing system comprises a vacuum processing chamber having at least a substrate carrier or a mask chucking apparatus according to other aspects of the present disclosure. According to a further aspect of the present disclosure, a method for operating an electropermanent magnet element in a system including the electropermanent magnet element is provided. The method includes providing a mask carrier over a surface of a substrate being supported by the substrate carrier, switching the electropermanent magnet element from a non-magnetized state to a magnetized state by applying an electrical current of an electromagnet, and removing the electrical current.

Description

SUBSTRATE CARRIER FOR SUPPORTING A SUBSTRATE, MASK CHUCKING APPARATUS, VACUUM PROCESSING SYSTEM, AND
METHOD OF OPERATING A SUBSTRATE CARRIER
TECHNICAE FIEED [0001] Embodiments of the present disclosure relate to apparatuses and methods for fixing and supporting a mask on a substrate carrier. In particular, embodiments of the present disclosure relate to apparatuses and methods for fixing and supporting a mask on a substrate carrier in a processing system having a vacuum process chamber, particularly for OLED manufacturing. BACKGROUND
[0002] Opto-electronic devices that make use of organic materials, such as organic light-emitting diodes (OLED), are becoming increasingly popular for a number of reasons. OLEDs are a special type of light-emitting diode in which the emissive layer comprises a thin-film of certain organic compounds. Organic light emitting diodes (OLEDs) are used in the manufacture of television screens, computer monitors, mobile phones, other hand-held devices, etc., for displaying information. OLEDs can also be used for general space illumination. The range of colors, brightness and viewing angles possible with OLED displays is greater than that of traditional LCD displays because OLED pixels directly emit light and do not involve a back light. Therefore, the energy consumption of OLED displays is considerably less than that of traditional LCD displays. Further, the fact that OLEDs can be manufactured onto flexible substrates results in further applications.
[0003] The functionality of an OLED depends on the coating thickness of the organic material. This thickness has to be within a predetermined range. In the production of OLEDs, there are technical challenges with respect to the deposition of evaporated materials in order to achieve high resolution OLED devices. In particular, accurate and smooth transportation of substrate carriers and masks through a processing system remains challenging. Further, accurately fixing and supporting a mask on a substrate carrier for achieving high quality processing results remains challenging, e.g. for production of high resolution OLED devices. [0004] Accordingly, there is a continuing demand for providing improved apparatuses and methods for fixing and supporting a mask on a substrate carrier.
SUMMARY
[0005] In light of the above, a substrate carrier for supporting a substrate and a mask in a vacuum chamber, a vacuum processing system and a method for operating a substrate carrier according to the independent claims are provided. Further aspects, benefits, and features of the present disclosure are apparent from the claims, the description, and the accompanying drawings.
[0006] According to an aspect of the present disclosure, a substrate carrier for supporting a substrate and a mask in a vacuum chamber is provided. The substrate carrier comprises an electropermanent magnet element, wherein the electropermanent magnet element is configured for applying a magnetic holding force to the mask.
[0007] According to another aspect of the present disclosure, a vacuum processing system is provided. The vacuum processing system comprises a vacuum processing chamber having at least a substrate carrier according to other aspects of the present disclosure.
[0008] According to a further aspect of the present disclosure, a method for operating a substrate carrier for supporting a substrate and a mask carrier, the substrate carrier including an electropermanent magnet element, is provided. The method includes providing a mask carrier over a surface of the substrate being supported by the substrate carrier, switching the electropermanent magnet element from a non- magnetized state to a magnetized state by applying an electrical current of an electromagnet, and removing the electrical current. [0009] Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing each described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus.
BRIEF DESCRIPTION OF THE DRAWINGS [0010] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the disclosure and are described in the following: FIG. la shows a schematic side view of a substrate carrier according to embodiments described herein;
FIG. lb shows a schematic side view of a substrate carrier according to further embodiments described herein;
FIG. 2a shows a schematic side view of an electropermanent magnet assembly of a substrate carrier according to embodiments described herein;
FIG. 2b shows a schematic side view of an electropermanent magnet assembly of a substrate carrier according to embodiments described herein;
FIG. 3 shows a schematic side view of an electropermanent magnet assembly of a substrate carrier according to embodiments described herein; FIG. 4 shows a schematic side view of a vacuum processing system according to embodiments described herein; and FIG. 5 shows a flow chart illustrating a method for operating a substrate carrier and a mask carrier according to embodiments described herein.
DETAILED DESCRIPTION OF EMBODIMENTS
[0011] Reference will now be made in detail to the various embodiments, one or more examples of which are illustrated in each figure. Each example is provided by way of explanation and is not meant as a limitation. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with any other embodiment to yield yet a further embodiment. It is intended that the present disclosure includes such modifications and variations. [0012] Within the following description of the drawings, the same reference numbers refer to the same or to similar components. Generally, only the differences with respect to the individual embodiments are described. Unless specified otherwise, the description of a part or aspect in one embodiment can apply to a corresponding part or aspect in another embodiment as well. [0013] Before various embodiments of the present disclosure are described in more detail, some aspects with respect to some terms and expressions used herein are explained.
[0014] Figs la and lb show schematic side views of a substrate carrier 100 according to embodiments described herein. In particular, according to embodiments which can be combined with any other embodiment described herein, the substrate carrier 100 is configured for supporting a substrate 101 and a mask 401 in a vacuum chamber, comprising an electropermanent magnet element 200. The electropermanent magnet element 200 is configured for applying a magnetic holding force to the mask 401. Electropermanent magnet element 200 is shown in an unmagnetized state in Fig. la wherein no magnetic holding force is applied to mask 401, and in a magnetized state in Fig. lb wherein a magnetic holding force is applied to mask 401.
[0015] In the present disclosure, a“substrate carrier” is to be understood as a carrier which is configured for holding a substrate as described herein, particularly a large area substrate. Typically, the substrate held or supported by the substrate carrier includes a front surface and a back surface, wherein the front surface is a surface of the substrate being processed, for example on which a material layer is to be deposited.
[0016] The term“substrate” as used herein may particularly embrace substantially inflexible substrates, e.g., glass plates and metal plates. However, the present disclosure is not limited thereto and the term“substrate” can also embrace flexible substrates such as a web or a foil. The term“substantially inflexible” is understood to distinguish over“flexible”. Specifically, a substantially inflexible substrate can have a certain degree of flexibility, e.g. a glass plate having a thickness of 0.9 mm or below, such as 0.5 or below, wherein the flexibility of the substantially inflexible substrate is small in comparison to the flexible substrates. According to embodiments described herein, the substrate may be made of any material suitable for material deposition. For instance, the substrate may be made of a material selected from the group consisting of glass (for instance soda-lime glass, borosilicate glass etc.), metal, polymer, ceramic, compound materials, carbon fiber materials or any other material or combination of materials which can be coated by a deposition process.
[0017] According to some embodiments, the substrate can be a “large area substrate” and may be used for display manufacturing. For instance, a“large area substrate” can have a main surface with an area of 0.5 m2 or larger, particularly of 1 m2 or larger. In some embodiments, a large area substrate can be GEN 4.5, which corresponds to about 0.67 m2 of substrate (0.73x0.92m), GEN 5, which corresponds to about 1.4 m2 of substrate (1.1 m x 1.3 m), GEN 7.5, which corresponds to about 4.29 m2 of substrate (1.95 m x 2.2 m), GEN 8.5, which corresponds to about 5.7 m2 of substrate (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 8.7 m2 of substrate (2.85 m x 3.05 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
[0018] Electropermanent magnet element 200 is configured for applying a magnetic holding force to mask 401. The magnetic holding force acting on mask 401 causes mask 401 to be drawn towards the surface of the substrate 101 such that mask 401 may make contact with the surface of the substrate 101 as shown in Fig. lb. The magnetic holding force may be sufficient enough such that mask 401 is held in a fixed position relative to the substrate 101. Holding mask 401 in a fixed position allows for an improvement in quality of the layers deposited on the substrate 101 during processing, as any movement of mask 401 during processing stages, between processing stages or during transport of substrate carrier 100 is suppressed.
[0019] According to embodiments described herein, materials deposition with a pattern mask, such as a fine metal mask (FMM) can be provided on large area substrates. Accordingly, the size of the area on which material is to be deposited is e.g. 1 m2 or above. Further, a pattern mask, e.g. for pixel generation of a display, provides a pattern in the micron range. Positioning tolerance of openings of the pattern mask in the micron range can be challenging over large areas. This is particularly true for vertically or essentially vertically oriented substrates. Even the gravity acting on the pattern mask and/or a respective frame of the pattern mask may deteriorate positioning accuracy of the pattern mask. Thus, an improved chucking arrangement for chucking the pattern mask to the substrate is particularly beneficial for vertical (essentially vertical) substrate processing.
[0020] Substrate carrier 100 is configured for supporting substrate 101 and mask 401 in a vacuum chamber. A vacuum chamber may be any closed chamber wherein the interior of the vacuum chamber is maintained at a lower pressure than the ambient pressure outside the vacuum chamber. The vacuum chamber may be a processing chamber wherein substrate 101 is processed. Such a processing operation may comprise deposition of a material onto the surface of substrate 101, etching of a material layer of substrate 101, application of heat to substrate 101 or cooling of substrate 101. The vacuum chamber may alternatively be a transport chamber or transfer chamber, wherein substrate 101 is transported or transferred from one vacuum chamber to another. The vacuum chamber may alternatively be a load lock chamber capable of transferring substrate 101 between one vacuum chamber maintained at a pressure and another vacuum chamber maintained at a different pressure.
[0021] Substrate carrier 100 is configured for supporting mask 401. Mask 401 is provided on the surface of substrate 101. Mask 401 may include a plurality of apertures which define a masking pattern for selective deposition of a material on the surface of substrate 101.
[0022] Mask 401 may include any structure which allows for providing a plurality of apertures to define a masking pattern. For example, mask 401 may include a flat plate element having apertures created therein through an etching process or a machining process. Mask 401 may be a fine metal mask (FMM).
[0023] Mask 401 may include at least an element including a magnetically attractable material, e.g. a metal, allowing for a magnetic holding force to be applied to mask 401 by electropermanent magnet element 200, which has the effect of holding mask 401 in a fixed position on the surface of substrate 101. The structural elements of mask 401 may all include magnetically attractable material, or only some of the structural elements of mask 401 may include magnetically attractable material.
[0024] Mask 401 may be an edge exclusion mask or a shadow mask. An edge exclusion mask is a mask which is configured for masking one or more edge regions of the substrate, such that no material is deposited on the one or more edge regions during the coating of substrate 101. A shadow mask is a mask configured for masking a plurality of features which are to be deposited on substrate 101. For instance, the shadow mask can include a plurality of small openings, e.g. a grid of small openings. For example, the plurality of small openings can correspond to pixels of a display.
[0025] Mask 401 may be mounted on a mask carrier 400. In the present disclosure, a“mask carrier” is to be understood as a carrier which is configured for holding a mask. Mask 401 may comprise a thin plate element having a plurality of apertures which define the masking pattern for selective deposition. As such, mask 401 may have insufficient rigidity to be effectively mounted and demounted to substrate carrier 100. Mask carrier 400, including mask carrier frame 402, may surround and hold mask 401 at a circumferential edge of mask 401, and may provide sufficient rigidity allowing for mask 401 to be mounted and demounted from substrate carrier 100. Mask carrier 400 may include a magnetically attractable material, e.g. a metal, so that mask carrier 400 may also be attracted towards substrate support surface 304 via a magnetic holding force generated by electropermanent magnet element 200.
[0026] Electropermanent magnet element 200 and electrostatic chuck 300 may be integrated into a common carrier body of substrate carrier 100. For example, electrostatic chuck 300 may be embedded in a first inner volume of the carrier body, and electropermanent magnet element 200 may be embedded in a second inner volume of the carrier body. Alternatively or additionally, electrostatic chuck 300 and electropermanent magnet element 200 may be firmly connected to the same carrier body, e.g. by attaching or fixing both electrostatic chuck 300 and electropermanent magnet element 200 to the same carrier body, so that electrostatic chuck 300 and electropermanent magnet element 200 can be transported and moved as a single unit. For example, the carrier body may be formed as a unitary plate structure in which both electrostatic chuck 300 and electropermanent magnet element 200 are arranged. As a further example, the electrostatic chuck 300 and electropermanent magnet element 200 may be integrated with each other.
[0027] Electrostatic chuck 300 may be arranged between electropermanent magnet element 200 and substrate 101, as exemplarily shown in Figs la and lb. Alternatively, electropermanent magnet element 200 may be arranged between electrostatic chuck 300 and substrate 101. [0028] FIGS la and lb exemplarily show the electropermanent magnet element
200 as a portion of the substrate carrier 100. According to yet further embodiments, which can be combined with other embodiments described herein, the electropermanent magnet element 200 may be a separate unit provided adjacent to a substrate carrier, e.g. in a position at which the mask is pulled towards a substrate. A mask chucking apparatus in a vacuum chamber can be provided. The apparatus includes an electropermanent magnet element having a first permanent magnet, at least a second permanent magnet; and a controlling magnet assembly having at least one controlling magnet and an electromagnet adjacent to the at least one controlling magnet. [0029] The mask chucking apparatus can be provided in the vacuum chamber at a position to have the mask attracted to a substrate on a substrate carrier. Features, details, and aspects of the electropermanent magnet element 200, which are described with respect to other examples having the electropermanent magnet element 200 as a portion of the substrate carrier can be correspondingly utilized.
[0030] Substrate carrier 100 may be configured for supporting substrate 101 and mask 401 in a non-horizontal orientation, particularly in an essentially vertical orientation. An“essentially vertical orientation” as used herein may be understood as an orientation wherein an angle between a main surface of substrate carrier 100 and the gravity vector is between +10° and -10°, particularly between 5° and -5°. In some embodiments, the orientation of substrate carrier 100 may not be (exactly) vertical during transport and/or during deposition, but slightly inclined with respect to the vertical axis, e.g. by an inclination angle between 0° and -5°, particularly between -1° and -5°. A negative angle refers to an orientation of substrate carrier 100 wherein substrate carrier 100 is inclined downward, i.e. the substrate surface to be processed is facing downward. A deviation from the gravity vector of orientations of mask 401 and substrate 101 during the deposition may be beneficial and may result in a more stable deposition process, or a down-facing orientation might be suitable for reducing particles on the substrate during deposition. However, also an exactly vertical orientation (+/-l°) of the mask device during transport and/or during deposition is possible.
[0031] A larger angle between the gravity vector and substrate carrier 100 during transport and/or during deposition is also possible. An angle between 0° and +/-30° may be understood as a“non-horizontal orientation” as used herein. Transporting substrate carrier 100 in a non-horizontal orientation may save space and allow for smaller vacuum chambers.
[0032] Substrate carrier 100 may further include power supply element 104 configured for providing power to electropermanent magnet element 200. Power supply element 104 may be an external power supply that is not attached to or integrated into substrate carrier 100. Alternatively, power supply element 104 may be attached to or integrated into substrate carrier 100. Power supply element 104 may generate one or more electric pulses, e.g. one or more current pulses, which may be suitable for switching electropermanent magnet element 200 between a magnetized state and a non-magnetized state, as exemplarily described in more detail with respect to Figs. 2a and 2b. For example, 10 or more pulses can be provided. Depending on the number of pulses the magnetization of the at least one controlling magnet 204 can be varied and/or adjusted. The magnetization influences the magnetic holding force acting on the mask.
[0033] According to yet further embodiments, which can be combined with other embodiments described herein, the magnetic force can be adjusted to be zero in the plane of the substrate and/or the mask. Magnetic forces of the various elements cancel out each other or the magnetic flux lines are guided away from the substrate or the mask.
[0034] In the case where power supply element 104 is located external to substrate carrier 100, this may have the advantage of only being able to supply power to electropermanent magnet element 200 at designated points in a vacuum processing system due to the bistable properties of electropermanent magnet element 200. For example, power supply element 104 may be provided at a mask mounting station in a vacuum processing system, such that power may only be provided to electropermanent magnet element 200 by power supply element 104 at the mask mounting station. Hence, while substrate carrier 100 is being transported throughout the vacuum processing system, there is no possibility for a malfunction to occur where the electropermanent magnet element 200 is inadvertently switched to a non-magnetized state, leaving mask 401 in a non- fixed position at an undesirable location. [0035] According to embodiments which can be combined with any other embodiments described herein, substrate carrier 100 further comprises an electrostatic chuck 300 comprising a substrate support surface 304. Electrostatic chuck 300 includes insulating layers 301, 303 and electrode layer 302. A surface of insulating layers 301, 303 may form substrate support surface 304. [0036] Electrostatic chuck 300 (also referred to herein as“e-chuck”) may be used to attract the substrate 101 to substrate support surface 304 of substrate carrier 100 during substrate processing. For example, substrate 101 may include a material, e.g. a dielectric material that can be pulled toward substrate support surface 304 by electrostatic forces such that substrate 101 can be pulled into direct contact with substrate support surface 304. Holding of substrate 101 can also be enabled during high-temperature processes, coating processes and plasma processes also in a vacuum environment.
[0037] Electrostatic chuck 300 includes insulating layers 301, 303. Insulating layers 301, 303 may be fabricated from a dielectric material, e.g. a high thermal conductivity dielectric material such as pyrolytic boron nitride, aluminum nitride, silicon nitride, alumina or an equivalent material, e.g. a thermally resistant polymer based material such as a polyimide based material or other organic materials. The electrodes of the electrostatic chuck may be connected to a power supply, e.g. a voltage source, respectively, which may apply a predetermined voltage to the electrodes to generate a predetermined electrostatic grip force.
[0038] Electrostatic chuck 300 includes electrode layer 302 including a plurality of electrodes. The plurality of electrodes may be connected to power supply element 105, e.g. a voltage source, which may apply a predetermined voltage to the electrodes to generate a predetermined electrostatic charge at substrate support surface 304, which may be adjustable.
[0039] Substrate carrier 100 may further include substrate support surface 304. Substrate support surface 304 may be a surface of electrostatic chuck 300, or may be a surface of another element provided over electrostatic chuck 300. Particularly, substrate support surface 304 may be a surface of one of insulating layers 301, 303. Substrate support surface 304 is configured for supporting substrate 101, and comprises a surface which supports substrate 101 over the entire surface of substrate 101. Substrate support surface 304 may have an area the same or greater than the area of substrate 101. [0040] Substrate support surface 304 may be electrostatically charged by electrostatic chuck 300. Electrostatically charging substrate support surface 304 has the effect of attracting substrate 101 to substrate support surface 304 such that substrate 101 is electrostatically chucked to substrate carrier 100. [0041] Substrate support surface 304 may be a flat surface such that substrate support surface 304 supports substrate 101 over its entire area. Alternatively, substrate support surface 304 may have a non-flat surface. Particularly, substrate support surface 304 may have a surface shaped to conform to the shape of substrate 101.
[0042] Substrate carrier 100 may further include power supply element 105 configured for providing power to electrostatic chuck 300. Power supply element 105 may be an external power supply that is not attached to or integrated into substrate carrier 100. Alternatively, power supply element 105 may be attached to or integrated into substrate carrier 100. Power supply element 105 may generate an electric pulse, e.g. a current pulse, which may be suitable for switching electropermanent magnet element 200 between a magnetized state and a non-magnetized state.
[0043] Power supply element 105 may be the same element as power supply element 104, which provides power to electropermanent magnet element 200, such that a single power supply element separately and independently provides power to both electropermanent magnet element 200 and electrostatic chuck 300. Such a consolidated single power supply element may be integrated into substrate carrier 100, or may be located external to substrate carrier 100.
[0044] Electrostatic chuck 300 may be configured as a monopolar chuck, as a bipolar chuck or as a multi-pole chuck. A“monopolar chuck” may be understood as an electrostatic chuck including one or more electrodes connectable to a power supply, e.g. a high voltage source. Power supply element 104 is configured to provide an electric voltage of a single polarity to plurality of electrodes. For example, a positive voltage may be applied to the plurality of electrodes of electrostatic chuck 300 such that a negative charge is induced on substrate support surface 304 of substrate carrier 100. Alternatively, a negative voltage may be applied to the plurality of electrodes such that a positive charge is induced on substrate support surface 304 of substrate carrier 100.
[0045] A“bipolar chuck assembly” as used herein may be understood as an electrostatic chuck including at least one first electrode and at least one second electrode connectable to the power supply, e.g. a high voltage source. Power supply element 104 is configured to provide an electric voltage of a first polarity to the first electrodes and an electric voltage of a second polarity to the second electrodes. For example, a negative voltage may be applied to the first electrodes, and a positive voltage may be applied to the second electrodes, or vice versa. Accordingly, corresponding negatively charged regions and corresponding positively charged regions may be generated at substrate support surface 304 by electrostatic induction.
[0046] In a multi-pole chuck assembly, a plurality of electrodes may be provided which may be independently controllable.
[0047] Electrostatic chuck 300 may include at least one first electrode and at least one second electrode, wherein a positive voltage (+) is applied to the first electrode and a negative voltage (-) is applied to the second electrode via power supply element 104, e.g. a high voltage source. The at least one first electrode may be interleaved with the at least one second electrode, in order to increase the grip force provided by electrostatic chuck 300. Alternatively or additionally, first electrodes and second electrodes may be alternately arranged. For example, electrostatic chuck 300 may include a plurality of wires which are positively and negatively charged in an alternate way.
[0048] According to embodiments which can be combined with any other embodiments described herein, the electropermanent magnet element 200 is switchable between a magnetized state and a non-magnetized state by applying an electrical current. For example, a power supply element 104 can be provided for supplying an electrical current to the electropermanent magnet element 200. Applying an electrical current causes the magnetic field of the electropermanent magnet element 200 to be reconfigured, subsequently altering the magnetic force applied to mask carrier 400.
[0049] As exemplarily shown in Figs. 2a and 2b, according to embodiments which can be combined with any other embodiments described herein, electropermanent magnet element 200 comprises a first permanent magnet 201, at least a second permanent magnet 202, and a controlling magnet assembly having at least one controlling magnet 204, and an electromagnet 205 adjacent to the at least one controlling magnet 204. Electropermanent magnet element 200 as shown in Fig. 2a is in a non-magnetized state, while electropermanent magnet element 200 as shown in Fig. 2b is in a magnetized state, enabling electropermanent magnet element 200 to apply a magnetic force to mask 401, accurately fixing mask 401 in place on substrate 101.
[0050] Electropermanent magnet element 200 includes a first permanent magnet
201 having a first polarity 20 la and a second polarity 20 lb, and at least a second permanent magnet 202 having a first polarity 202a and a second polarity 202b. First permanent magnet 201 and the at least a second permanent magnet 202 are arranged such their adjacent polarities are the same. For example, in the electropermanent magnet element 200 exemplarily shown in Figs. 2a and 2b, adjacent second polarities 20 lb, 202b of first permanent magnet 201 and the at least a second permanent magnet 202, respectively, may both be configured as north polarity. [0051] First permanent magnet 201 and the at least a second permanent magnet
202 could be designated“clamping magnets”, such that the first permanent magnet 201 and the at least a second permanent magnet 202 form a“clamping magnet assembly”. The clamping magnet assembly of electropermanent magnet element 200 is configured to generate the magnetic field required to apply a magnetic holding force to mask 401, in a sense“clamping” mask 401 to substrate 101.
[0052] The controlling magnet assembly includes at least one controlling magnet 204 having a first polarity 204a and a second polarity 204b. The at least one controlling magnet 204 may generate a magnetic field sufficient to control the state of the electropermanent magnet element 200. When the at least one controlling magnet 204 is polarized in a first polarization, the magnetic field generated by the at least one controlling magnet 204 configures the electropermanent magnet element 200 to be in a non-magnetized state, as exemplarily shown in Fig. 2a. By switching the first and second polarities 204a, 204b of the at least one controlling magnet 204 such that the at least one controlling magnet 204 is polarized in a second polarization, the magnetic field generated by the at least one controlling magnet 204 configures the electropermanent magnet element 200 to be in a magnetized state such that a magnetic holding force is applied to mask 401, as exemplarily shown in Fig. 2b.
[0053] Electromagnet 205 may be positioned adjacent to controlling magnet 204. Electromagnet 205 may substantially enclose the at least one controlling magnet 204. Electromagnet 205 is configured to switch the polarity of the at least one controlling magnet 204. Electromagnet 205 may include at least one coil, or at least one winding of an electrically conductive wire. Inducing an electrical current in the at least one coil of electromagnet 205 generates a magnetic field, e.g., a reversing magnetic field, within the electromagnet 205. When the reversing magnetic field within electromagnet 205 exceeds the intrinsic coercivity, or resistance to being demagnetized, of the at least one controlling magnet 204, the reversing magnetic field causes the polarity of the at least one controlling magnet 204 to switch from a first polarity to a second polarity.
[0054] Applying a first electrical current causes the electropermanent magnet element 200 to switch from a non-magnetized state to a magnetized state, while applying a second electrical current different to the first electrical current causes the electropermanent magnet element 200 to switch from a magnetized state to a non- magnetized state. The first electrical current may be applied in a forward direction, and the second electrical current may be applied in a reverse direction.
[0055] The electrical current applied to switch the electropermanent magnet element 200 between a non-magnetized state to a magnetized state may be provided, wherein a power of 1 kW or more, such as 8 kW or more is provided. The electrical current may be applied for a duration of less than 3 seconds, particularly less than 1 second, more particularly between 0.3 seconds and 1 second. [0056] According to embodiments which can be combined with any other embodiments described herein, the electropermanent magnet element 200 is configured to remain in a magnetized state or a non-magnetized state after removal of the electrical current. After applying an electrical current to the electropermanent magnet element 200 and subsequently removing the electrical current, the configuration of the magnetic field generated by electropermanent magnet element 200 remains stable. Hence, the electropermanent magnet element 200 exhibits bistable behavior, with a stable non-magnetized state and a stable magnetized state. Configuring the electropermanent magnet element 200 to be bistable allows for a mask carrier 400 to remain fixed to substrate carrier 100 even in an unpowered state, enabling the substrate carrier 100 to accurately fix mask carrier 400 in place.
[0057] The at least two permanent magnets 201, 202 and the at least one controlling magnet 204 include specific magnetic alloys to obtain the desired magnetic properties. The material of first permanent magnet 201 and the at least a second permanent magnet 202 is to be suitable for generating high magnetic fields to effectively fix mask 401 in place. Additionally or alternatively, the intrinsic coercivity of first permanent magnet 201 and the at least a second permanent magnet 202 is higher than the magnetic field generated by the at least one controlling magnet 204. The at least one controlling magnet 204 does not generate a strong magnetic field to switch the polarity of the at least two permanent magnets 201, 202. In this sense, the at least two permanent magnets 201, 202 can be referred to as“hard” magnets, while the at least one controlling magnet 204 can be referred to as a“soft” magnet.
[0058] According to embodiments which may be combined with any other embodiments described herein, electropermanent magnet element 200 further includes at least one core element 203 disposed between the first permanent magnet 201 and the at least one second permanent magnet 202, wherein the at least one core element 203 comprises a ferromagnetic material.
[0059] The at least one core element 203 may comprise a ferrous material. Particularly, the at least one core element 203 may comprise carbon steel, ferritic stainless steel or martensitic stainless steel. When the at least one core element 203 comprises a ferromagnetic material, the strength of the magnetic field generated by the electropermanent magnet element 200 is enhanced. An enhanced magnetic holding force is applied to mask 401 to hold mask 401 in a fixed position on the surface of substrate 101. Further, when the at least one core element 203 comprises a ferromagnetic material, the magnetic field generated by the electropermanent magnet element 200 is more evenly distributed across the entire surface of the electropermanent magnet element 200, allowing the magnetic holding force to be applied to mask 401 more evenly.
[0060] As exemplarily shown in Fig. 3, electropermanent magnet element 200 may include a plurality of permanent magnet elements 201, 202, a plurality of controlling magnets 204, a plurality of core elements 203 and a plurality of electromagnets 205. Permanent magnet elements 201, 202 are arranged such that the polarity of one permanent magnet element 201, 202 facing a surface of an adjacent core element 203 is the same as the polarity of the next permanent magnet element 201, 202 facing another surface of the same adjacent core element 203. The electropermanent magnet element 200 shown in Fig. 3 is in a magnetized state wherein a magnetic holding force is applied to mask 401.
[0061] An electropermanent magnet element 200 having multiple permanent magnet elements 201, 202 and a plurality of core elements 203 allows for the magnetic field generated by electropermanent magnet element 200 to be more evenly distributed over the substrate support surface 304. Further, the magnetic field generated may have a higher strength than an arrangement comprising only one each of permanent magnet elements 201, 202 and core element 203.
[0062] According to embodiments which may be combined with other embodiments described herein, the area defined by first permanent magnet 201, at least one second permanent magnet 202 and at least one core element 203 is at least 80% of the area of substrate 101.
[0063] The area defined by first permanent magnet 201, at least one second permanent magnet 202 and at least one core element 203 may be called the effective area of electropermanent magnet element 200. The effective area of electropermanent magnet element 200 is the area in which the magnetic field is generated by electropermanent magnet element 200, and hence the area in which the magnetic holding force is applied to mask 401. [0064] The effective area of electropermanent magnet element 200 may be smaller than the area of substrate 101. For example, the effective area may be at least 80% of the area of substrate 101. When the effective area is smaller than the area of substrate 101, electropermanent magnet element 200 applies a magnetic holding force to mask 401 in a smaller area than substrate 101. This feature has the effect of preventing mask 401 from being pulled around the edges of substrate 101, which can prevent damage to mask 401 or the edges of substrate 101.
[0065] Alternatively, the effective area of electropermanent magnet element 200 may be larger than the area of substrate 101. For example, the effective area may be up to 110% of the area of substrate 101, particularly up to 130% of the area of substrate 101. When the effective area is larger than the area of substrate 101, the magnetic field generated by electropermanent magnet element 200 may also apply a magnetic holding force to elements of mask 401 outside of the area of substrate 101. For example, electropermanent magnet element 200 may also apply a magnetic holding force to mask carrier 400, which may have the effect of chucking mask carrier 400 to substrate carrier 100 without employing an additional chucking apparatus.
[0066] According to embodiments which can be combined with any other embodiments described herein, first permanent magnet 201 and the at least one second permanent magnet 202 include a rare-earth metal. Particularly, first permanent magnet 201 and the at least one second permanent magnet 202 may include a neodymium alloy. Permanent magnets 201, 202 comprising neodymium alloy can be magnetized to generate a high magnetic field and have a high coercivity, or resistance to demagnetization. Having a high coercivity allows the at least two permanent magnets 201, 202 to resist being demagnetized by the at least one controlling magnet 204. [0067] According to embodiments which can be combined with any other embodiments described herein, the at least one controlling magnet 204 includes an aluminium nickel cobalt (AlNiCo) alloy. When the at least one controlling magnet 204 includes AlNiCo alloy, the at least one controlling magnet 204 can be magnetized to generate a strong magnetic field to switch electropermanent magnet element 200 between a non-magnetized state and a magnetized state. AlNiCo magnets have a high coercivity, or resistance to demagnetization. However, AlNiCo magnets have a coercivity that is lower than that of the neodymium alloy included in permanent magnets 201, 202. A current may be applied to electromagnet 205 to generate a reversing magnetic field to switch the polarity of the at least one controlling magnet 204 including AlNiCo alloy.
[0068] Fig. 4 shows a schematic side view of a vacuum processing system 500 according to a further aspect described herein. In particular, according to embodiments which may be combined with other embodiments described herein, vacuum processing system 500 comprises vacuum processing chamber 501 having at least a substrate carrier 100 according to the embodiments described herein.
[0069] Vacuum processing chamber 501 may include one or more processing apparatus 502 arranged therein. The one or more processing apparatus 502 may be operated to perform one or more processing operations within vacuum processing chamber 501. The one or more processing apparatus 502 may include a deposition apparatus, a heat treatment apparatus, a cooling apparatus or any other apparatus which performs a processing operation. The deposition apparatus may be an evaporation device including a crucible for housing a material that is to be evaporated and at least one distribution pipe for guiding the evaporated material toward a plurality of openings in the distribution pipe, which are directed towards substrate 101.
[0070] Processing apparatus 502 may be provided on a moveable support so that the processing apparatus 502 may be moved past the substrate 101 during a processing operation. For example, in the case where processing apparatus 502 includes a deposition apparatus, the deposition apparatus may be moved past the substrate 101 such that the deposited material is distributed across the entire surface of substrate 101.
[0071] Vacuum processing system 500 includes at least a substrate carrier 100 according to embodiments described herein. Substrate carrier 100 may be transported into, out of or through vacuum processing system 500. [0072] Substrate carrier 100 may be arranged such that an angle between the vertical direction and substrate 101 is between 0° and -10° when substrate 101 is held on substrate support surface 304 of substrate carrier 100. In particular, substrate 101 may be arranged such that the surface to be coated is slightly facing downward during deposition. Such an arrangement has the effect of reducing the amount of particles which settle on the surface of substrate 101, thereby improving the quality of the layers of deposited material. In the case where substrate 101 is held at an angle, processing apparatus may be arranged parallel to substrate 101.
[0073] Substrate 101 is attracted to substrate support surface 304 of substrate carrier 100 with electrostatic chuck 300, and mask 401 is attracted toward substrate support surface 304 and the surface of substrate 101 with electropermanent magnet element 200.
[0074] Vacuum processing system 500 may include further vacuum processing chambers 501 such that vacuum processing system 500 includes a plurality of vacuum processing chambers 501. The plurality of vacuum processing chambers 501 may be arranged sequentially such that a first processing operation is performed in a first processing chamber, substrate carrier 100 is transported to a second processing chamber, a second processing operation is performed in the second processing chamber, and so on in subsequent processing chambers. The plurality of vacuum processing chambers 501 may be connected such that the vacuum environment is common to all or some vacuum processing chambers, or vacuum processing chambers 501 may include locking devices to maintain different vacuum environments from one vacuum processing chamber to the next.
[0075] Vacuum processing system 500 may further include a track configured for contactless transportation. In the present disclosure, a “track configured for contactless transportation” is to be understood as a track which is configured for contactless transportation of a carrier, particularly a substrate carrier or a mask carrier. The term“contactless” can be understood in the sense that the weight of the carrier, e.g. of the substrate carrier or mask carrier, is not held by a mechanical contact or mechanical forces, but is held by a magnetic force. In particular, the carrier can be held in a levitating or floating state using magnetic forces instead of mechanical forces. For example, in some implementations, there can be no mechanical contact between the carrier and the transportation track, particularly during levitation, movement and positioning of the substrate carrier and/or mask carrier.
[0076] The contactless transport system may include substrate carrier support rail 505 and mask carrier support rail 506 configured for lifting at least a part of the weight of substrate carrier 100 and mask carrier 400, respectively, using attractive magnetic forces. The contactless transport system may further include substrate carrier driving rail 503 and mask carrier driving rail 504. The substrate carrier driving rail 503 and the mask carrier driving rail 504 may be configured a translational movement of substrate carrier 100 and mask carrier 400, respectively, using magnetic forces. Support rails 505, 506 and driving rails 503, 504 are arranged and configured for supporting and/or transporting substrate carrier 100 and mask carrier 400 in a vertical or essentially vertical orientation.
[0077] Substrate carrier driving rail 503 and mask carrier driving rail 504 may include linear actuating elements configured for magnetically transporting mask carrier 400 and substrate carrier 100, respectively. The linear actuating elements may be a linear motor. Driving rails 503, 504 allow for contactless transport of substrate carrier 100 and mask carrier 400 into, out of or through vacuum processing system 500.
[0078] A contactless transport system has the advantage of zero friction transport of substrate carrier 100 and mask carrier 400, which reduces particle generation. A reduction in generated particles through transport of substrate carrier 100 and mask carrier 400 results in improved quality of material layers deposited on the surface of substrate 101.
[0079] Vacuum processing system 500 may further include at least a load lock chamber. The load lock chamber allows for substrate carrier 100 to be transported from an ambient environment (e.g. from a non-vacuum) to a vacuum environment in a vacuum processing chamber 501. The load lock chamber may include a vacuum pump for generating a vacuum inside the load lock chamber, and may further include at least a valve for venting the load lock chamber to the ambient environment.
[0080] Vacuum processing system 500 may further include a mask alignment apparatus. During mounting of mask carrier 400 supporting mask 401 to substrate carrier 100, the proper alignment of mask 401 with respect to substrate 101 may be performed. The mask alignment apparatus may include any apparatus configured for translating or rotating mask carrier 400 in at least a direction with respect to substrate 101. The mask alignment apparatus may be provided in a vacuum processing chamber 501, or may be provided in a separate vacuum chamber specifically for mounting and aligning mask carrier 400 supporting mask 401.
[0081] According to embodiments which may be combined with other embodiments described herein, substrate carrier 100 is a magnetic chuck for chucking a mask 401 to a substrate 101, wherein the magnetic chuck comprises a chucking surface 304 and the electropermanent magnet element 200 is provided behind the chucking surface 304.
[0082] Fig. 5 is a flow diagram for illustrating a method for operating a substrate carrier according to a further aspect described herein. The method 600, beginning at block 601, comprises providing a mask carrier over a surface of the substrate being supported by the substrate carrier in block 602, switching the electropermanent magnet element from a non-magnetized state to a magnetized state by applying an electrical current of an electromagnet in block 603, and removing the electrical current in block 604, the method concluding in box 605.
[0083] In block 602, a mask carrier is provided over a surface of substrate 101 being supported by substrate carrier 100. Substrate 101 may be attracted to substrate support surface 304 by electrostatic force generated by electrostatic chuck 300 such that substrate 101 is held in a fixed position. A mask carrier is then provided over the surface of substrate 101 such that mask 401 having a plurality of apertures defines a plurality of deposition areas for depositing one or more layers of material thereon.
[0084] In block 603, electropermanent magnet element 200 is switched from a non-magnetized state to a magnetized state. The application of an electrical current of electromagnet 205 generates a magnetic field in electromagnet 205 which has the effect of switching the polarity of the at least one controlling magnet 204. Switching the polarity of the at least one controlling magnet 204 causes electropermanent magnet element 200 to switch from a non-magnetized state to a magnetized state. The magnetic field generated by permanent magnets 201, 202 apply a magnetic holding force to mask 401 such that mask 401 is attracted to substrate support surface 304 and the surface of substrate 101, fixing mask 401 in place. [0085] In block 604, the electrical current of electromagnet 205 is removed. Due to the bistable properties of electropermanent magnet element 200, the removal of the electrical current allows the polarity of the at least one controlling magnet 204 to remain in the switched polarity, subsequently allowing electropermanent magnet element 200 to remain in a magnetized state. [0086] After removing the electrical current of electromagnet 205, the mask carrier is magnetically fixed in place on the surface of substrate 101, and substrate carrier 100 may be transported through a vacuum processing system for processing. Electropermanent magnet element 200, having bistable properties, remains in a magnetized state and will continue to apply a magnetic holding force to mask 401, fixing mask 401 in place. Movement of mask 401 with respect to substrate 101 is hence suppressed, even during transport of substrate carrier 100, which leads to higher quality and reliability of deposited layers.
[0087] Method 600 may be performed in the order specified above for mounting a mask carrier to substrate carrier 100. In the case of mounting a mask carrier, the applied electrical current of electromagnet 205 may be applied in a forward direction such that electropermanent magnet element 200 is switched from a non-magnetized state to a magnetized state, applying a magnetic holding force to fix mask 401 in place. [0088] Conversely, method 600 may also be performed in the reverse order for unmounting a mask carrier from substrate carrier 100. In the case of unmounting a mask carrier, the applied electrical current of electromagnet 205 may be applied in a reverse direction such that electropermanent magnet element 200 is switched from a magnetized state to a non-magnetized state, releasing the magnetic holding force applied to mask 401 allowing the mask carrier to be unmounted.
[0089] According to embodiments which may be combined with any other embodiment described herein, method 600 further includes aligning the mask carrier relative to the substrate carrier prior to switching the electropermanent magnet element in block 602a. Aligning the mask carrier may include operating a mask alignment apparatus such that the mask carrier is translated and/or rotated into a predetermined position with respect to the substrate carrier 100 and/or the substrate 101. Precise alignment of the mask carrier increases the reliability and quality of deposited layers on the surface of substrate 101. The alignment of the mask carrier may include a first rough alignment and a subsequent fine alignment to ensure that the mask deviates from the substrate in an up-down direction and/or in a left-right direction by 10 pm or less, particularly 3 pm or less, respectively.
[0090] While the foregoing is directed to embodiments of the disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow. [0091] In particular, this written description uses examples to disclose the disclosure, including the best mode, and also to enable any person skilled in the art to practice the described subject-matter, including making and using any devices or systems and performing any incorporated methods. While various specific embodiments have been disclosed in the foregoing, mutually non-exclusive features of the embodiments described above may be combined with each other. The patentable scope is defined by the claims, and other examples are intended to be within the scope of the claims if the claims have structural elements that do not differ from the literal language of the claims, or if the claims include equivalent structural elements with insubstantial differences from the literal language of the claims.

Claims

1. A substrate carrier for supporting a substrate in a vacuum chamber, comprising: an electropermanent magnet element configured for applying a magnetic holding force to a mask.
2. The substrate carrier according to claim 1, further comprising an electrostatic chuck and a substrate support surface configured for supporting the substrate.
3. The substrate carrier according to claim 1 or 2, wherein the electropermanent magnet element is switchable between a magnetized state and a non-magnetized state by applying an electrical current.
4. The substrate carrier according to claim 3, wherein the electropermanent magnet element is configured to remain in a magnetized state or a non-magnetized state after removal of the electrical current.
5. The substrate carrier according to any of claims 1 to 4, wherein the electropermanent magnet element comprises: a clamping magnet assembly comprising clamping magnets; and a controlling magnet assembly comprising at least one controlling magnet and at least one coil, wherein the at least one coil substantially encloses the at least one controlling magnet of the controlling magnet assembly and is configured to switch the polarity of the at least one controlling magnet.
6. The substrate carrier according to any of claims 1 to 5, wherein the substrate carrier is configured for supporting the substrate and the mask.
7. A mask chucking apparatus in a vacuum chamber, comprising: an electropermanent magnet element, comprising: a first permanent magnet, at least a second permanent magnet; and a controlling magnet assembly having at least one controlling magnet and an electromagnet adjacent to the at least one controlling magnet.
8. The mask chucking apparatus according claim 7, wherein the electropermanent magnet element further comprises at least one core element disposed between the first permanent magnet and the at least a second permanent magnet, wherein the at least one core element comprises a ferromagnetic material.
9. The mask chucking apparatus according to claim 8, wherein an area defined by the first permanent magnet, the at least one second permanent magnet and the at least one core element is at least 80% of the area of the substrate.
10. The mask chucking apparatus according to any of claims 7 to 9, wherein the first permanent magnet and the at least second permanent magnet comprise a rare- earth metal, particularly a neodymium alloy.
11. The mask chucking apparatus according to any of claims 7 to 10 wherein the at least one controlling magnet comprises an aluminium nickel cobalt (AlNiCo) alloy.
12. A vacuum processing system comprising: a vacuum processing chamber having at least a substrate carrier according to any of claims 1 to 6 or a mask chucking apparatus according to claims 7 to 11.
13. The vacuum processing system according to claim 12, wherein the substrate carrier is a magnetic chuck for chucking a mask to a substrate, the magnetic chuck comprises: a chucking surface and the electropermanent magnet element provided behind the chucking surface.
14. A method for operating an electropermanent magnet element in a system having the electropermanent magnet element, comprising: providing a mask carrier over a surface of a substrate being supported by the substrate carrier; switching the electropermanent magnet element from a non-magnetized state to a magnetized state by applying an electrical current of an electromagnet; and removing the electrical current.
15. The method according to claim 14, further comprising aligning the mask carrier relative to the substrate carrier prior to switching the electropermanent magnet element.
PCT/EP2017/080238 2017-11-23 2017-11-23 Substrate carrier for supporting a substrate, mask chucking apparatus, vacuum processing system, and method of operating a substrate carrier WO2019101319A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020197005082A KR20190062380A (en) 2017-11-23 2017-11-23 A substrate carrier for supporting a substrate, a mask chucking device, a vacuum processing system, and a method of operating a substrate carrier
CN201780051374.8A CN110073481A (en) 2017-11-23 2017-11-23 The method for being used to support the substrate carrier of substrate, mask chucking device, vacuum flush system and operation substrate carrier
PCT/EP2017/080238 WO2019101319A1 (en) 2017-11-23 2017-11-23 Substrate carrier for supporting a substrate, mask chucking apparatus, vacuum processing system, and method of operating a substrate carrier
JP2019504983A JP2020503663A (en) 2017-11-23 2017-11-23 Substrate carrier for supporting a substrate, mask chucking device, vacuum processing system, and method of operating substrate carrier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2017/080238 WO2019101319A1 (en) 2017-11-23 2017-11-23 Substrate carrier for supporting a substrate, mask chucking apparatus, vacuum processing system, and method of operating a substrate carrier

Publications (1)

Publication Number Publication Date
WO2019101319A1 true WO2019101319A1 (en) 2019-05-31

Family

ID=60782169

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2017/080238 WO2019101319A1 (en) 2017-11-23 2017-11-23 Substrate carrier for supporting a substrate, mask chucking apparatus, vacuum processing system, and method of operating a substrate carrier

Country Status (4)

Country Link
JP (1) JP2020503663A (en)
KR (1) KR20190062380A (en)
CN (1) CN110073481A (en)
WO (1) WO2019101319A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10916464B1 (en) 2019-07-26 2021-02-09 Applied Materials, Inc. Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency
US11189516B2 (en) 2019-05-24 2021-11-30 Applied Materials, Inc. Method for mask and substrate alignment
US11196360B2 (en) 2019-07-26 2021-12-07 Applied Materials, Inc. System and method for electrostatically chucking a substrate to a carrier
US11538706B2 (en) 2019-05-24 2022-12-27 Applied Materials, Inc. System and method for aligning a mask with a substrate
US11756816B2 (en) 2019-07-26 2023-09-12 Applied Materials, Inc. Carrier FOUP and a method of placing a carrier

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022146667A1 (en) 2020-12-29 2022-07-07 Mattson Technology, Inc. Electrostatic chuck assembly for plasma processing apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100079742A1 (en) * 2008-09-30 2010-04-01 Canon Anelva Corporation Substrate holding apparatus, mask, substrate processing apparatus, and image display device manufacturing method
EP2397905A1 (en) * 2010-06-15 2011-12-21 Applied Materials, Inc. Magnetic holding device and method for holding a substrate
WO2015171226A1 (en) * 2014-05-09 2015-11-12 Applied Materials, Inc. Substrate carrier system with protective covering

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE502005003731D1 (en) * 2005-04-20 2008-05-29 Applied Materials Gmbh & Co Kg Magnetic mask holder
EP2213761A1 (en) * 2007-11-30 2010-08-04 Canon Anelva Corporation Substrate processing apparatus and substrate processing method
JP2010106359A (en) * 2008-09-30 2010-05-13 Canon Anelva Corp Substrate holding apparatus, substrate processing apparatus, mask and image display manufacturing method
CN106165141B (en) * 2014-05-09 2019-01-15 应用材料公司 Substrate carrier system and the method for using it
US9463543B2 (en) * 2014-06-02 2016-10-11 Applied Materials, Inc. Electromagnetic chuck for OLED mask chucking

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100079742A1 (en) * 2008-09-30 2010-04-01 Canon Anelva Corporation Substrate holding apparatus, mask, substrate processing apparatus, and image display device manufacturing method
EP2397905A1 (en) * 2010-06-15 2011-12-21 Applied Materials, Inc. Magnetic holding device and method for holding a substrate
WO2015171226A1 (en) * 2014-05-09 2015-11-12 Applied Materials, Inc. Substrate carrier system with protective covering

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11189516B2 (en) 2019-05-24 2021-11-30 Applied Materials, Inc. Method for mask and substrate alignment
US11538706B2 (en) 2019-05-24 2022-12-27 Applied Materials, Inc. System and method for aligning a mask with a substrate
US10916464B1 (en) 2019-07-26 2021-02-09 Applied Materials, Inc. Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency
US11183411B2 (en) 2019-07-26 2021-11-23 Applied Materials, Inc. Method of pre aligning carrier, wafer and carrier-wafer combination for throughput efficiency
US11196360B2 (en) 2019-07-26 2021-12-07 Applied Materials, Inc. System and method for electrostatically chucking a substrate to a carrier
US11756816B2 (en) 2019-07-26 2023-09-12 Applied Materials, Inc. Carrier FOUP and a method of placing a carrier

Also Published As

Publication number Publication date
CN110073481A (en) 2019-07-30
JP2020503663A (en) 2020-01-30
KR20190062380A (en) 2019-06-05

Similar Documents

Publication Publication Date Title
WO2019101319A1 (en) Substrate carrier for supporting a substrate, mask chucking apparatus, vacuum processing system, and method of operating a substrate carrier
US9463543B2 (en) Electromagnetic chuck for OLED mask chucking
TWI679081B (en) Carrier, mask device, vacuum system and method of operating a vacuum system
JP6681977B2 (en) Apparatus for vacuuming a substrate, system for vacuuming a substrate, and method for transporting a substrate carrier and a mask carrier in a vacuum chamber
US8686819B2 (en) Magnetic holding device and method for holding a substrate
US8663431B2 (en) Sputtering system for depositing thin film and method for depositing thin film
JP6502396B2 (en) Magnetic chucking of mask by Halbach array
JP2011195907A (en) Mask holding device and thin film forming device
KR20180114888A (en) Positioning arrangement for substrate carrier and mask carrier, transfer system for substrate carrier and mask carrier, and methods therefor
WO2018141366A1 (en) Substrate carrier and method of processing a substrate
US9959961B2 (en) Permanent magnetic chuck for OLED mask chucking
TWI684210B (en) Method of processing a substrate, substrate carrier for holding a substrate and corresponding deposition apparatus
TW202008627A (en) Holding device for holding a carrier or a component in a vacuum chamber and method of producing the same, use of a holding device for holding a carrier or a component in a vacuum chamber, apparatus for handling a carrier in a vacuum chamber, and vacuum deposition system
WO2019238244A1 (en) Apparatus for lifting off a mask from a substrate, substrate carrier, vacuum processing system, and method of operating an electropermanent magnet assembly
US10580986B2 (en) Vapor deposition apparatus with electromagnets generating magnetic field in reverse orientation
WO2020164687A1 (en) Holder for substrate processing in a vacuum chamber, holding arrangement, system and method
TW202004967A (en) Substrate carrier apparatus
KR20190116968A (en) Apparatus for handling carrier in a vacuum chamber, vacuum deposition system, and method of handling carrier in vacuum chamber

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2019504983

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20197005082

Country of ref document: KR

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17818052

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17818052

Country of ref document: EP

Kind code of ref document: A1