JP6502396B2 - Magnetic chucking of mask by Halbach array - Google Patents

Description

  Embodiments of the present disclosure generally relate to chucking of a mask on a substrate. More particularly, embodiments relate to magnetic chucking of a mask on a substrate using a Halbach array.

  Masks are often placed on semiconductor substrates to control which areas of the substrate are processed. The substrate as well as the mask are often held on the substrate support using mechanical force. Conventional mechanical contacts used to hold the substrate and mask during processing can often result in damage to the substrate due to the application of high mechanical forces. Additional mechanical force is applied to hold the mask in place during processing. Conventional mechanical carriers generally hold the substrate at the edge, thus providing a very concentrated physical contact with the edge of the substrate, which is sufficient to reliably pick up the substrate. Secure the applied clamping force. This mechanical contact concentrated at the edge of the substrate necessarily produces contact contamination or physical damage to the substrate.

  Newer processing systems incorporate alternative mechanisms for chucking the substrate to avoid such damage, such as holding the substrate in place using electrostatic forces. The electrostatic force can effectively hold the substrate in place during processing while minimizing contact between the metal parts of the system and the substrate. However, the electrostatic force used to chuck the substrate can not effectively chuck the mask in place as well.

  Thus, there is a need for a method and apparatus for positioning and chucking a mask in a processing system independently of substrate positioning and chucking.

  In one embodiment, a processing system is provided for chucking a mask to a substrate. The processing system includes a processing chamber and a magnetic chuck disposed within the processing chamber. The magnetic chuck includes a chucking surface and a plurality of magnets oriented in one or more Halbach arrangements relative to the chucking surface. Each magnet has a north pole oriented in one of four directions. One or more rotation mechanisms are coupled to change the direction of at least one N pole of the magnet.

  In another embodiment, a substrate carrier is provided for use in a processing chamber. The substrate carrier includes a support base, an electrode assembly, a substrate support surface, and a magnetic chuck. The support base is operable to move the substrate carrier in and out of the processing chamber. An electrode assembly is disposed on the support base to electrostatically chuck the substrate to the substrate support surface. The substrate support surface is disposed on the electrode assembly. The magnetic chuck is integrated with the support base. The magnetic chuck includes one or more rotation mechanisms and a plurality of magnets oriented in one or more Halbach arrays relative to the substrate support surface. Each magnet has a north pole oriented in one of four directions. One or more rotation mechanisms are coupled to change the direction of at least one N pole of the magnets

  In another embodiment, a method is provided for chucking a mask to a substrate in a processing chamber. The method comprises the steps of transporting a substrate disposed on a substrate support surface of a substrate carrier into a processing chamber, chucking a mask to the substrate, depositing a layer on the substrate through the mask, a substrate carrier Moving at least some of the plurality of magnets disposed in the one or more Halbach arrays within the magnetic chuck proximate the substrate support surface to dechuck the mask from the substrate disposed thereon And.

In order to be able to understand the above configuration of the embodiments disclosed above in detail, a more specific description briefly summarized above will be made with reference to the following embodiments. Some of the embodiments are illustrated in the attached drawings. However, it should be noted that the attached drawings only show typical embodiments, and therefore should not be construed as limiting the scope and excluding other equally effective embodiments. is there.
~ FIG. 7 shows a schematic top view illustrating an evaporation source for organic material used with a magnetic chucking assembly according to embodiments described herein. FIG. 6 shows a schematic top view of a deposition apparatus having a magnetic chucking assembly according to embodiments described herein. FIG. 1 shows an exploded view of an embodiment of a substrate carrier having an integrated electrostatic chuck according to an embodiment. FIG. 8 illustrates a chucking assembly having a magnetic chuck that includes a plurality of Halbach arrays, according to one embodiment. ~ FIG. 1A shows a front schematic view of a magnetic chuck including a Halbach arrangement, according to one embodiment. ~ FIG. 1 shows a front schematic view of a magnetic chuck that includes multiple Halbach arrays, according to one embodiment. FIG. 1 shows a schematic plan view of a magnetic chuck including a Halbach arrangement, according to one embodiment. FIG. 3 is a process flow diagram according to one embodiment.

  Wherever possible, the same reference numbers are used throughout the drawings to refer to the same elements that are common to the figures, in order to facilitate understanding. It is understood that elements disclosed in one embodiment may be beneficially utilized in other embodiments without specific description.

Detailed description

  The present disclosure relates generally to an apparatus for chucking a mask on a substrate, and methods of use thereof. A magnetic chuck having one or more Halbach arrangements can be integrated into a processing chamber or substrate carrier for use in a processing chamber. By incorporating a series of magnets arranged in the Halbach array, the mask can be chucked in place on the substrate in a controlled manner by moving at least some of the Halbach array magnets.

  1A-1D illustrate top views of the evaporation source 100 at various locations 11-14 in the processing chamber 110 relative to the first mask 132a and the second mask 132b, according to embodiments described herein. . Processing chamber 110 may be a vacuum processing chamber. According to an exemplary embodiment, the masks 132a, 132b are provided in the mask frames 131a, 131b, respectively, to hold the masks 132a, 132b in place. The movement between the different positions of the evaporation source 100 is indicated by arrows 101B, 101C and 101D. 1A-1D show an evaporation source 100 having an evaporation crucible 104 and a distribution pipe 106. The distribution pipe 106 is supported by a support 102. Furthermore, according to some embodiments, the evaporation crucible 104 can also be supported by the support 102.

  In the processing chamber 110, a first substrate 121a and a second substrate 121b are provided. The first substrate 121a and the second substrate 121b are supported and chucked by the first substrate carrier 150a and the second substrate carrier 150b, respectively. Carriers 150a, 150b are described in further detail with reference to FIG. 3 below. A first mask 132a and a second mask 132b are provided between the respective substrates 121a, 121b and the evaporation source 100. The first mask 132a and the second mask 132b are chucked by the first magnetic chuck 151a and the second magnetic chuck 151b, respectively. The mask chucking assembly 151a, 151b can minimize and reduce the contact force between each substrate 121a, 121b and the mask 132a, 132b during display manufacturing as compared to conventional mechanical mask clamps . In some embodiments, each magnetic chuck 151a, 151b can be a component of a respective substrate carrier 150a, 150b. In other embodiments, each magnetic chuck 151a, 151b can be a separate device for each substrate carrier 150a, 150b. The mask chucking assemblies 151a, 151b are described in more detail with reference to FIGS. 4-7 below.

  As shown in FIGS. 1A-1D, the organic material is evaporated from the distribution pipe 106 to deposit a layer on the substrates 121a, 121b. The spray path 10 indicates the direction in which the evaporation source 100 sprays the deposited material as the evaporation source deposits material on the substrate 121a (see FIGS. 1B and 1C) and the substrate 121b (see FIG. 1D). The first mask 132a and the second mask 132b can mask the area of each substrate 121a, 121b at the time of deposition.

  In FIG. 1A, the evaporation source 100 is shown in a first position 11 with the first substrate carrier 150a, 150b, the first substrate carrier 150a, 150b being in the position where the deposition process is to start. Hold. Since the deposition process has not yet begun, the masks 132a, 132b are not chucked and thus are illustrated spaced from the respective substrates 121a, 121b.

  In FIG. 1B, the first magnetic chuck 151a chucks the first mask 132a at a position in contact with the substrate 121a. Although the mask 132a is shown as uniformly chucked to the first substrate 121a, certain areas of the mask can be chucked with greater pressure than other areas. For example, the portion of the first mask 132a on the area of the first substrate 121a currently receiving deposition material from the evaporation source 100 can be chucked at a higher pressure than the other portions of the first mask 132a . With the first mask 132a in place, with the arrow 101B moving from the first position 11 of FIG. 1A to the second position 12 of FIG. 1B and then to the third position 13 of FIG. 1C. As shown, the translational movement of the evaporation source 100 can deposit a layer of organic material on the first substrate 121a. While the first substrate 121a is deposited with a layer of organic material through the first mask 132a, the second substrate 121b can be replaced with a new substrate. FIG. 1B shows a second transport track 124b to help replace the second substrate 121b. Because the second substrate 121b is not in place in FIG. 1B, the second substrate carrier 150b and the second magnetic chuck 151b are not activated for chucking, and the mask 132a has the substrate 121b on the second transport track 124b. It is shown spaced from the engaged position.

  After the first substrate 121a is deposited with a layer of organic material, the distribution pipe 106 of the evaporation source 100 is indicated by the arrow 101C of FIG. 1C from the third position of FIG. 1C to the fourth position 14 of FIG. 1D. To rotate. Thereafter, while depositing the organic material on the first substrate 121a, the second substrate 121b is chucked to the second substrate carrier 150b. Next, the second mask 132b is positioned and aligned with respect to the second substrate 121b, and then chucks the second mask 132b on the second magnetic chuck 151b on the second substrate 121b. Thus, after rotation of arrow 101C in FIG. 1C, the second substrate 121b can be coated with a layer of organic material through the second mask 132b, as shown by arrow 101D in FIG. 1D. While the second substrate 121b is coated with an organic material, the first mask 132a can be removed (unchucked) from the first magnetic chuck 151a. As a result, the first mask 132a is shown spaced from the first transport track 124a used to help replace the first substrate 121a with a new substrate. With the first mask 132a not chucked, the first substrate 121a can then be removed from the chamber 110.

  According to the embodiments described herein, the first substrate 121a and the second substrate 121b are coated with an organic material at a substantially vertical position. As mentioned above, FIGS. 1A-1D are top views of the processing chamber 110 and corresponding devices within the processing chamber 110 (eg, the evaporation source 100). The distribution pipe 106 can be a vapor distribution showerhead, and in some embodiments, the distribution pipe 106 can be a linear vapor distribution showerhead. This allows the distribution pipe 106 to provide an essentially vertically extending source. According to the embodiments described herein, "essentially vertically" refers primarily to the orientation of the substrate, allowing for deviations from the vertical of 10 degrees or less. This offset recognizes that in some embodiments, substrate carriers that are somewhat offset from the vertical direction can result in more stable substrate position. Furthermore, "essentially vertical" is considered to be different from the horizontal substrate orientation. The surface of the substrate (e.g., the first substrate 121a) is mainly the vertical dimension of the substrate (as shown by the evaporation source 100 moving from the first position 11 to the second position 12 and the third position 13) That is, it can be coated by the evaporation source 100 along the Y direction and the translational movement along the horizontal direction (ie, the X direction). However, although described in reference to an essentially vertical position for an exemplary vertical (vertical) processing chamber, this configuration and / or chamber is not intended to be limiting. Embodiments described herein are equally applicable to horizontal (horizontal) chambers or chambers capable of processing more or fewer substrates.

Although the embodiments described herein specifically relate to the deposition of organic materials (eg, deposits for manufacturing organic light emitting diode (OLED) displays and deposits on large area substrates), embodiments are other processes. May also be useful. According to some embodiments, the large area substrate can have a size of at least 0.174 m ² . The carrier can support a substrate of about 1.4 m ² to about 9 m ² (eg, about 2 m ² to about 8 m ² , or up to 12 m ² in some embodiments). The rectangular area of the carrier on which the substrate is supported, for which the embodiments described herein are provided, is about the same as or slightly larger than the size of the large area substrate. In some embodiments, the thickness of the substrate can be 0.1 to 1.8 mm. However, in some embodiments, the thickness of the substrate can be about 0.9 mm or less (e.g., 0.5 mm or 0.3 mm), and the holding device and device conform to the thickness of such substrate It can be done. The substrate can be made of any material suitable for deposition of material. For example, the substrate can be glass (eg, soda lime glass, borosilicate glass, etc.), metal, polymer, ceramic, composite, carbon fiber material, or any other material or combination of materials that can be coated by a deposition process It can be made of a material selected from the group consisting of

  In some embodiments, the first magnetic chuck 151a and the second magnetic chuck 151b may independently chuck and unchuck the masks 132a, 132b without affecting chucking of the respective substrates 121a, 121b. A permanent magnet can be used which enables the king. In other embodiments, electromagnets can be used for the magnets in the mask chucking assemblies 151a, 151b. In yet another embodiment, permanent magnets and electromagnets can be mixed and used for the magnets in the mask chucking assemblies 151a, 151b.

  In any of the embodiments described herein, magnets (permanent magnets, electromagnets, or a combination of both) can be arranged in a Halbach array. As used herein, a Halbach array refers to an arrangement of magnets that enhances the magnetic field on one side of the array and reduces or cancels the magnetic field on the other side to near zero. In some embodiments, the reduced magnetic field is only partially reduced, not nearly zero. Employing an embodiment having magnets arranged in a Halbach array has the advantage of concentrating the magnetic field on one side of the array, so that all of the magnets are arranged in the same direction (e.g. all of the magnets) Of the poles of the same (or alternating north / south configuration), which results in a stronger magnetic field on that side. The magnets in the Halbach array can be oriented such that each magnet is π / 2 out of phase with each adjacent magnet in the array. 4-7 provide additional details of an embodiment of a mask chucking assembly using a Halbach array.

  FIG. 2 shows a plan view of a deposition apparatus 200 for depositing an organic material in a processing chamber 240 including substrate carriers 150a, 150b and mask chucking assemblies 151a, 151b, according to one embodiment. Processing chamber 240 may be a vacuum processing chamber. An evaporation source 230 is provided in the processing chamber 240 on the track or linear guide 224. The linear guide 224 is configured for translational movement of the evaporation source 230. According to different embodiments that can be combined with other embodiments described herein, the drive for translational motion is in the evaporation source 230, in the track or linear guide 224, in the processing chamber 240, or It can be provided in their combination. FIG. 2 shows a valve 205 (eg, a gate valve). The valve 205 enables vacuum sealing to an adjacent processing chamber (not shown in FIG. 2). The valve 205 can be opened to transport one or more substrates (eg, substrates 121 a and 121 b) or one or more masks (eg, masks 132 a and 132 b) into and out of the processing chamber 240.

  In some embodiments, a maintenance processing chamber 210 is provided adjacent to the processing chamber 240. The processing chamber 240 and the maintenance processing chamber 210 can be connected to the valve 207. Valve 207 is configured to open and close a vacuum seal between process chamber 240 and maintenance process chamber 210. The evaporation source 230 can be transferred to the maintenance processing chamber 210 with the valve 207 open. Thereafter, the valve 207 can be closed to provide a vacuum seal between the processing chamber 240 and the maintenance processing chamber 210. When the valve 207 is closed, the maintenance processing chamber 210 can be vented and opened for maintenance of the evaporation source 230 without breaking the vacuum in the processing chamber 240.

  Two substrates 121 a, 121 b may be supported on respective transport tracks in the processing chamber 240. In addition, two tracks can be provided to provide the masks 132a, 132b on top. Thereby, the coating of the substrates 121a, 121b can be masked by the respective masks 132a, 132b. According to an exemplary embodiment, the masks 132a, 132b are provided in mask frames 131a, 131b for holding the masks 132a, 132b in place. The masks 132a, 132b are chucked in place on the substrates 121a, 121b using the respective chucking assemblies 151a, 151b. In some embodiments, the chucking assembly 151a, 151b chucks the substrates 121a, 121b and the masks 132a, 132b independently without affecting the positioning of the substrates 121a, 121b, and the mask 121a, 121b, The masks 132a, 132b can be disposed on the respective substrates 121a, 121b without mechanically controlling the 121b. For example, in some embodiments, each chucking assembly 151a, 151b includes an electrostatic chuck for chucking the respective substrate 121a, 121b and a magnetic chuck for chucking the respective mask 132a, 132b. be able to.

  According to some embodiments, the substrates 121a, 121b may be supported by substrate carriers 150a, 150b, which may be connected to the respective alignment units 212a, 212b. The alignment units 212a, 212b adjust the position of the substrates 121a, 121b relative to the respective masks 132a, 132b to provide proper alignment between the substrates 121a, 121b and the respective masks 132a, 132b. Can be an actuator. This proper alignment is important during deposition of organic materials and other forms of display manufacturing. In some embodiments, the masks 132a, 132b and / or the mask frames 131a, 131b can be connected to respective alignment units 212a, 212b. Thereby, the alignment units 212a, 212b can position the masks 132a, 132b relative to the respective substrates 121a, 121b, or position the masks 132a, 132b and the respective substrates 121a, 121b relative to each other. it can.

  When the substrates 121a, 121b are held on the substrate carriers 150a, 150b, the substrates 121a, 121b have horizontal dimensions 125, thickness dimensions 126, and vertical dimensions (not shown in the plan view of FIG. 2) It can be described. The X direction may be essentially parallel to the horizontal dimension 125. The Y direction can be essentially parallel to the vertical dimension. The Z direction may be essentially parallel to the thickness dimension 126. The surface of each substrate 121a, 121b forms a plane in the XY plane. Each alignment unit 212a, 212b can provide relative alignment of the respective mask 132a, 132b and / or the substrate 121a, 121b in at least the X and Y directions. Each mask 132a, 132b may have a masking surface in an XY plane essentially parallel to the surface of each substrate 121a, 121b to be processed.

  In some embodiments, alignment units 212a, 212b may also provide alignment of substrates 121a, 121b and / or masks 132a, 132b in the Z-direction. In one embodiment, each mask 132a, 132b may be held stationary within the processing chamber 240, and each alignment unit 212a, 212b may be configured to mask each of the substrates 121a, 121b in the X, Y, and Z directions. It can be aligned to 132a, 132b.

  As shown in FIG. 2, the linear guide 224 can provide a fixed translational movement of the evaporation source 230 along the X direction, the evaporation source translating along the horizontal dimension 125 of the substrate 121a, 121b. While, the evaporation source allows material to be deposited in the vertical dimension of the substrates 121a, 121b. In some embodiments, the evaporation source 230 deposits material on only one of the substrates 121a, 121b at a time, but in other embodiments, the evaporation source simultaneously deposits material on both substrates 121a, 121b. be able to.

  The deposition apparatus 200 can include respective substrate transport tracks (not shown) for transport of each of the substrates 121a, 121b. Each transport track can extend along an X direction parallel to the horizontal dimension of each substrate 121a, 121b. In some embodiments, each substrate transport track can move the respective substrate carrier 150 a, 150 b into and out of the processing chamber 240. In another embodiment, the transport track enables the substrates 121a, 121b to be transported on a fixed substrate support in the processing chamber 240.

  In some embodiments, mask support tracks (not shown) are provided to support the mask frames 131a, 131b and thereby the masks 132a, 132b. The mask support track can facilitate transfer of the masks 132a, 132b into and out of the processing chamber 240 for various reasons, such as when a new mask is needed or when an existing mask needs to be cleaned. . The masks 132a, 132b may remain attached to the mask frame 131a, 131b during transport, or in some embodiments, the masks 132a, 132b and mask frames 131a, 131b separate during transport. Can. Some embodiments can include two transport tracks for each of the substrates 121a, 121b and the two mask support tracks in the processing chamber 240.

  In other embodiments, the masks 132a, 132b and their respective mask frames 131a, 131b move onto transport tracks of the substrates 121a, 121b to facilitate transport of the masks 132a, 132b into and out of the processing chamber 240. It can be done. If substrates 121a and 121b, masks 132a and 132b, and mask frames 131a and 131b can all be transported in and out of processing chamber 240 using the same two tracks (eg, transport tracks for substrates 121a and 121b) For example, the cost of ownership of the deposition apparatus 200 can be reduced. One or more actuators or robotic devices can be used to facilitate transfer of the masks 132a, 132b and mask frames 131a, 131b onto the transport track.

  Once the masks 132a, 132b and their respective substrates 121a, 121b are aligned with one another, the substrate carriers 150a, 150b can bring the substrates 121a, 121b into proximity with the masks 132a, 132b. During the deposition process, organic material is propelled from the evaporation source 230 onto the substrates 121a, 121b. This organic material is deposited on the substrates 121a, 121b through the openings in the masks 132a, 132b. The openings provide a subsequent pattern of deposition material on the substrates 121a, 121b. If the masks 132a, 132b are located too far from their respective substrates 121a, 121b, the organic material is incorrectly deposited through the openings in the masks 132a, 132b, leading to poor resolution or failure of the final product there is a possibility. The masks 132a, 132b can cause physical damage to the substrates 121a, 121b if the masks 132a, 132b make excessive or uncontrolled contact with the respective substrates 121a, 121b. This physical damage can be exacerbated by multiple alignment processes between the substrates 121a, 121b and the masks 132a, 132b. By using substrate carriers 150a, 150b as described herein, the three-dimensional position of the mask can be more finely controlled, resulting in better deposition with minimal risk of substrate damage during processing. Becomes possible.

  FIG. 2 shows an exemplary embodiment of the evaporation source 230. The evaporation source 230 includes the support 102. The support 102 is configured to translate along the linear guide 224. The support 102 supports the evaporation crucible 104 and a distribution pipe 208 provided on the evaporation crucible 104. Thereby, the vapor generated in the evaporation crucible 104 can move upward from one or more outlets of the distribution pipe 208. According to embodiments described herein, distribution pipe 208 can also be considered as a vapor distribution showerhead (eg, a linear vapor distribution showerhead).

  FIG. 2 further shows a shield assembly having at least one shield 202. Typically, as shown in FIG. 2, the embodiment can include two side shields 202. This allows the spray from the distribution pipe 208 to be confined and directed to the substrate. Spray from the distribution pipe 208 in a direction perpendicular to the normal spray direction is avoided or can only be used in the idle mode. In light of the fact that it can be easier to shut off the organic material vapor beam as compared to switching off the organic material vapor beam, the evaporation source 230 can be used during an operating mode where vapor emission is undesirable. The distribution pipe 208 may also be rotated towards one of the side shields 202 to avoid steam leaving the.

  FIG. 3 shows an exploded view of one embodiment of a substrate carrier 300. The substrate carrier 300 can be a component of the substrate carriers 150a, 150b described above. The substrate carrier 300 includes a support base 304, an electrode assembly 306 disposed on or in the support base 304, and a sealing member 302 disposed on the electrode assembly 306 and together forming the body 311 of the substrate carrier 300. Including. The support base 304 defines the bottom surface 312 of the substrate carrier 300, while the sealing member 302 defines the substrate support surface 313 of the substrate carrier 300. Although not shown, the body 311 can include lift pin holes extending therethrough. The support base 304 can be operable to move the substrate carrier 300 into and out of the processing chamber (eg, processing chamber 240). For example, the support base 304 can include guide rails (not shown) to help transport the substrate carrier 300. The guide rails can be configured to interface with a transport mechanism or drive system within the processing chamber. In other embodiments, the support base can interface with a conveyor or track, such as the second transport track 124b of FIG. 1B.

  In the embodiment of FIG. 3, the support base 304 is rectangular with a perimeter (defined by the sides 314) that substantially conforms to the shape and size of the electrode assembly 306, the sealing member 302, and the substrates 121a, 121b. It has a shape. The support base 304, the electrode assembly 306, and the sealing member 302 may be any other shape or geometry selected as needed to accommodate the geometry of the workpiece (e.g., the substrates 121a, 121b). It should be noted that it may have For example, although the substrate carrier 300 is shown in a rectangular shape, the shape of the substrate carrier 300 may alternatively be other geometric shapes for accommodating different substrates (eg, circular for accommodating circular substrates) The geometric shape of

In one embodiment, the support base 304 can be made of an insulating material (eg, a dielectric material or a ceramic material). The support base 304 can have a rigid structure. Preferred examples of ceramic materials or dielectric materials are polymers (eg, polyimide), silicon oxide (eg, quartz or glass), aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), yttrium-containing material, yttrium oxide (Y ₂ O ₃ ), yttrium-aluminum-garnet (YAG), titanium oxide (TiO), titanium nitride (TiN), silicon carbide (SiC) and the like. Optionally, support base 304 can be a metal or metal body having a dielectric layer disposed on the surface of support base 304 opposite electrode assembly 306.

  The electrode assembly 306 is disposed on or in the support base 304 and includes at least two dispersive electrodes 308, 310. Each electrode 308, 310 can be charged with a different polarity to generate an electrostatic force when a chucking voltage is applied. The electrodes 308, 310 are configured to distribute the electrostatic force along a distance that is at least twice the width of the substrate carrier 300. Each electrode 308, 310 may have a plurality of geometric shapes interleaved or inserted between other electrodes of multiple similar or different geometric shapes. As shown in FIG. 3, the plurality of electrode fingers 320 of the electrode 308 are interleaved with the plurality of electrode fingers 322 of the electrode 310. The interleaved fingers 320, 322 of the distributed electrodes 308, 310 provide localized electrostatics distributed over a large area of the substrate carrier 300 providing high chucking forces while using less chucking power in the assembly. Provide gravity. The electrode fingers 320, 322 can be formed to have different shapes, lengths, and geometric shapes. In one example, one or both of the electrode fingers 320, 322 may be formed from interconnected electrode islands 324. The interconnects 326 between the electrode islands 324 may be in the plane of the electrodes 308, 310 as shown in FIG. 3, or even out of plane (eg, in the form of jumpers and / or vias) Good. In one embodiment, each electrode finger 320, 322 has a width 316 of about 0.25 mm to about 10 mm.

  In one embodiment, the electrode assembly 306 can be manufactured from a metallic material (eg, an aluminum silicon alloy) having a thermal expansion coefficient similar to the adjacent sealing member 302 and the support base 304. In one embodiment, the thermal expansion coefficient of the electrode assembly 306 is between about 4 μm / (m · K) and about 6 μm / (m · K), and generally about the thermal expansion coefficient of the sealing member 302 It is within 20%.

  A space 328 is defined between each of the electrode fingers 320 of the first electrode 308 to receive the electrode finger 322 of the second electrode 310. Space 328 may be an air gap, may be filled with a dielectric spacer material, or may be filled with at least one of support base 304 or sealing member 302.

  Vias 332, 334 can be formed through the support base 304 to couple the first and second electrodes 308, 310 to a chucking power supply (not shown). In some embodiments, an optional battery 330 is disposed in the support base 304 and connected to the first and second electrodes 308, 310 to provide power for chucking the substrates 121a, 121b. Can. Battery 330 may be a lithium ion battery and may have terminal connections (not shown) external to support base 304 to recharge battery 330 without removing it from support base 304.

  The sealing member 302 is disposed on the support base 304 sandwiching the electrode assembly 306 and forms the main body 311 of the substrate carrier 300 as an integral structure. A sealing member 302 is disposed on the electrode assembly 306 and provides an insulating surface on which the substrates 121a, 121b are chucked. Sealing member 302 can be fabricated from a material having thermal characteristics (eg, a coefficient of thermal expansion) that substantially match the thermal characteristics of the underlying electrode assembly 306. In some embodiments, the material used to manufacture the sealing member 302 can also be used to manufacture the support base 304.

After laminating the sealing member 302, the electrode assembly 306 and the support base 304 together, bonding (for example, annealing) is performed to fuse the sealing material 302, the electrode assembly 306 and the support base 304 together, and the substrate A laminated structure is formed that forms the main body 311 of the carrier 300. Because the sealing member 302, the electrode assembly 306, and the support base 304 can operate in a high temperature environment (e.g., greater than 300.degree. C.), the materials used to manufacture these components are heat resistant The material can be selected from, for example, ceramic or glass materials capable of maintaining high heat treatment during the annealing process. In one embodiment, the sealing member 302 and the support base 304 may be manufactured from a ceramic material, a glass material, or a composite of ceramic and metal material that provides good strength and durability and good heat transfer properties. . The material selected to make the sealing member 302 and the support base 304 has a thermal expansion coefficient substantially matching that of the intermediate electrode assembly 306 to provide stress or high thermal load. Thermal expansion inconsistencies that can cause failure can be reduced. In one embodiment, the thermal expansion coefficient of the sealing member 302 is between about 2 μm / (m · K) and about 8 μm / (m · K). Ceramic materials suitable for producing the sealing member 302 and the support base 304 include silicon carbide, aluminum nitride, aluminum oxide, yttrium-containing material, yttrium oxide (Y ₂ O ₃ ), yttrium-aluminum-garnet (YAG), It can include, but is not limited to, titanium oxide (TiO) or titanium nitride (TiN). In another embodiment, the sealing member 302 and the support base 304 can be made of a composite material that includes different compositions of ceramic and metal (e.g., a metal in which ceramic particles are dispersed).

  In operation, charge can be applied to the first electrode 308 and opposite charge can be applied to the second electrode 310, thereby generating an electrostatic force. During chucking of the substrate, the electrostatic force generated by the electrodes 308 310 firmly holds the substrate (eg, the substrates 121 a 121 b) to the substrate support surface 313 of the sealing member 302. When the power supplied from the chucking power supply is turned off, the charge present at the interface 318 between the electrodes 308, 310 can be maintained for an extended period of time, thus the substrates 121a and 121b after the power is removed. Can remain chucked to the substrate carrier 300. In order to release the substrate held on the substrate carrier 300, short pulses of power of opposite polarity are supplied to the electrodes 308, 310, thereby removing the charge present at the interface 318.

  FIG. 4 shows a chucking assembly 400 according to one embodiment. The chucking assembly 400 includes a substrate carrier 402 and a magnetic chuck 404. The magnetic chuck 404 can be utilized in the processing chamber 110 in place of the magnetic chucks 151a, 151b. The substrate carrier 402 can be configured to attach and detach the substrate 420. In one embodiment, the substrate carrier 402 is substantially similar to the substrate carrier 300 described with reference to FIG. The magnetic chuck 404 can be coupled to a support base of the substrate carrier 402 (eg, the support base 304 of the substrate carrier 300). The magnetic chuck 404 is shown here as rectangular in shape. However, the magnetic chuck 404 can be of any shape that can send the magnetic field of the magnet into the magnetic chuck 404 to clamp the mask 430 onto the substrate 420 held by the substrate carrier 402. .

  The magnetic chuck 404 can include a plurality of magnets arranged in one or more Halbach arrays shown as Halbach arrays 406a-406j housed within the chuck body 408. Further details regarding the arrangement of magnets in one or more Halbach arrangements are provided with reference to FIGS. 5A-7. The chuck body 408 can completely surround the Halbach arrays 406a-406j. The chuck body 408 can further include an optional actuator 410 and a chucking surface 412. In operation, the strong side of the magnetic field generated by the Halbach arrangement is on the chucking surface side of the chuck body 408. An optional actuator 410 is operable to move the chuck body 408 and thus control the distance between the chucking surface 412 of the magnetic chuck 404 and the substrate carrier 402. In some embodiments, the optional actuator 410 can bring the magnetic chuck 404 closer to the mask 430. The chucking surface 412 is the surface through which the magnetic chucking force is applied, and can attract the mask 430 to the substrate 420 disposed on the substrate carrier 402. The chucking surface 412 can be a flat surface as shown in FIG.

  The substrate 420 has a support surface 421 chucked to the substrate carrier 402 and a processing surface 422 on which material is deposited during processing. The substrate carrier 402 can chuck the support surface 421 of the substrate 420 using electrostatic force as described above with reference to FIG. The mask 430 is positioned in front of and aligned with the processing surface 422 of the substrate 420. The magnetic field of the magnetic chuck 404 can then be magnetically connected to the mask 430. As used herein, magnetic connection refers to the location or arrangement of magnets in one or more Halbach arrangements that cause the mask 430 to attract the magnetic field of the magnetic chuck 404.

  In some embodiments, the magnetic connection between the magnetic chuck 404 and the mask 430 is achieved by increasing or decreasing the distance between the chucking surface 412 of the magnetic chuck 404 and the mask 430. These changes in distance can be achieved by moving the magnetic chuck 404 and / or the mask 430. In embodiments where the magnetic chuck is integrated with the substrate carrier 402, the carrier 402 can have one or more actuators that reposition the magnetic chuck 404 in the carrier 430 closer to the mask 430. In some embodiments, the Halbach arrays 406 a-406 j magnets can be repositioned within the chuck body 408. In some embodiments, some or all of the Halbach arrays 406a-406j magnets may be electromagnets, where the current applied to the electromagnets is reversed to change the direction of the magnetic field. Can. In some embodiments that use electromagnets, the current can be increased or decreased to control the strength of the magnetic field.

  In embodiments where the distance between the magnetic chuck 404 and the mask 403 is varied, the proximity of the Halbach arrays 406 a-406 j to the mask 430 controls the magnetic attraction of the magnetic field from the magnet to the mask 430. The magnetic force from the Halbach arrays 406a-406j's magnets in the magnetic chuck 404 brings at least a portion of the mask 430 into position on or in contact with the substrate 420. Thereafter, layer 430 (not shown) is deposited on substrate 420 through mask 430. Once the layer is deposited, the magnet within the magnetic chuck 404 or chuck 404 is then repositioned or, in the case of an electromagnet, the current is reduced so that the magnetic field no longer fixes the mask 430 to the substrate 420 , Allow removal of the mask 430.

  The following letters and symbols are used in FIGS. 5A-7 to indicate the position of the magnetic poles of the magnet. "N" indicates that the magnet is oriented with its north pole pointing out of the figure. "S" indicates that the magnet is oriented with its south pole pointing out of the figure. The arrows indicate the direction in which the north pole of the magnet is oriented with respect to the plane of the two-dimensional view.

  5A-5C illustrate frontal schematic views of a magnetic chuck 504 that includes a Halbach array 510, according to one embodiment. The Halbach arrangement 510 includes a plurality of magnets 511-518. The magnetic chuck 504 includes a chucking surface 522, which may be similar to the chucking surface 412 described with reference to FIG. In some embodiments, the magnets 511-518 can be permanent magnets, each having the shape of a long magnetic rod or tube. Each rod or tube can have a long dimension 528 that covers substantially all one of the dimensions of the chucking surface 522, such as the edge 525.

  Although the chucking surface 522 is shown to be transparent to indicate the orientation of the magnets 511-518 relative to the chucking surface 522, such transparency is not required. The magnets 511-518 can be recessed relative to the chucking surface 522 in a manner similar to that shown where the Halbach arrays 406a-406j are recessed from the chucking surface 412 of FIG.

  In each of FIGS. 5A-5C, at least some of the poles of magnets 511-518 are differently oriented with respect to chucking surface 522. FIG. By arranging the magnets 511-518 in different orientations, an increased magnetic field can be generated relative to the chucking surface 522 to chuck the mask in one orientation (see FIG. 5A), the mask in the other orientation. In order to dechuck, a reduced or offset magnetic field can be generated relative to the chucking surface 522 (see FIGS. 5B and 5C).

FIG. 5A shows magnets 511-518 placed in a chucking state by magnets 511-518 placed in a _first orientation 511 ₁ -5181 of Halbach array 510. Each magnet 511-518 has an N pole oriented in one of four directions with respect to the chucking surface 522. When the magnets 511-518 are arranged in a _first orientation 511 ₁ -518 ₁ , each outwardly directed magnet (eg, magnet 513) having a first pole pointing outward towards the chucking surface 522. ) Are adjacent to one or two other magnets (e.g., magnets 512, 514) having respective first poles facing the outwardly facing magnets. This orientation produces a strong magnetic field directed out of the chucking surface 522 and allows the mask (not shown) to be chucked. The mask can have features similar to the mask described above (eg, mask 132a, 132b, or 430).

  The magnetic chuck 504 can further include a rotation mechanism 530. The rotation mechanism 530 can be an actuator (eg, a pneumatic actuator, a solenoid, a motor, or other suitable mechanism). A rotation mechanism can be used to rotate at least some of the magnets 511-518 to generate an enhanced magnetic field relative to the chucking surface 522, thereby chucking the mask in one direction (See FIG. 5A), a reduced or canceled magnetic field is generated relative to the chucking surface 522, which allows the mask to be dechucked to other orientations (see FIGS. 5B and 5C). The rotation mechanism 530 can be coupled to the magnets 511-518 via a plurality of gears 541-548. The rotation mechanism 530 and the plurality of gearwheels 541 to 548 rotate around the rotation axis (e.g., rotation axis 551) parallel to the end 525, 526 of the chucking surface 522 and the long dimension 528 of the magnets 511 to 518. Can be rotated. In some embodiments, the rotation mechanism 530 is directly connected to the main gear 540 coupled to the plurality of gears 541-548.

  In some embodiments, the gears 541-548 are varied to offset the rotation of the magnets 511-518 from a position on the chucking surface 522 (e.g., the center 524 or one of the ends 525, 526). (E.g., various ovals). In some embodiments, rotation of magnets (e.g., magnets 514, 515) closest to center 524 causes rotation of magnets 513, 516, which causes rotation of magnets 512, 517. It is operable so that it can cause rotation of the magnets 511, 518 at the ends 525, 526. Thus, magnets closer to center 524 (eg, magnets 514, 515) can rotate faster than magnets further away from center 524 (eg, magnets 513, 516). In other embodiments, the order of rotation may be reversed such that the magnets 511, 518 of the ends 525, 526 are rotated before the other magnets and the magnets 514, 515 are rotated after the other magnets. It is possible. Thus, magnets closer to end 525 (eg, magnets 513, 516) can rotate faster than magnets further away from the center (eg, magnets 514, 515).

  In other embodiments, the rotation can be offset from one end to the opposite end. For example, for rotation, the rotation of each magnet is such that the rotation of the magnet is slightly faster than the rotation of the magnet, the rotation of the magnet 511 is the most advanced, and the rotation of the magnet 518 is the most recent. It can be shifted.

  In still other embodiments, the rotation of each magnet 511-518 can be controlled individually and additional rotation sequences can be searched. For example, each magnet 511-518 can be coupled to a separate actuator (eg, a separate servo or a separate pneumatic actuator). In some embodiments, the rotation mechanism 530 and the plurality of gears 541-548 are components of the magnetic chuck 504. In other embodiments, the rotation mechanism 530 and the plurality of gears 541-548 are separate devices and not part of the magnetic chuck 504. In embodiments where a magnetic chuck (eg, magnetic chuck 504) is integrated with a substrate carrier (eg, substrate carrier 300), the rotation mechanism 530 may also be integrated with a substrate carrier (eg, substrate carrier 300) The rotation mechanism 530 can be a separate component within the processing chamber (e.g., the processing chamber 110). In embodiments where the magnetic chuck (eg, magnetic chuck 504) is a separate component from the substrate carrier (eg, substrate carrier 300), the rotation mechanism 530 is configured separately in the processing chamber (eg, processing chamber 110) It can be an element.

  In some embodiments, the rotation mechanism 530 is not coupled to all of the magnets 511-518. In such embodiments, the rotation mechanism 530 has its north pole oriented in two of four directions, at least two of which are coupled to magnets that differ by about 180 degrees. For example, the rotation mechanism 530 can be coupled only to the magnets 512, 514, 516, and 518, each of which has its north pole oriented in the left and right direction in the figure, and left and right different by 180 degrees. FIG. 5C provides additional details for an embodiment in which the rotation mechanism 530 is coupled only to a magnet whose north pole is oriented in two of four directions.

5B shows a magnet 511 to 518 arranged in a dechucking state having a second orientation ₅₁₁ 2-518 magnets 511 to 518 disposed in the _second Halbach array 510. Each magnet 511-518 has an N pole oriented in one of four directions with respect to the chucking surface 522. When the magnets 511-518 are arranged in the second orientation 511 ₂ -518 ₂ , each outward facing having a first pole (eg, the south pole of the magnet 512) facing outwards towards the chucking surface 522. The magnet (e.g., magnet 512) is one or two other magnets having respective opposite pole first poles (n-poles of magnets 511, 513) opposite to the outwardly facing magnets (e.g., magnet 512) Adjacent to (eg, magnets 511, 513). This orientation can result in a reduced or near zero magnetic field directed out of the chucking surface 522 to dechuck the mask.

The rotation mechanism 530 is coupled to all the magnets 511-518 of the Halbach array 510 in order to change the orientation of the magnets 511-518 from the first orientation 511 ₁ -518 ₁ to the second orientation 511 ₂ -518 ₂ . In embodiments using two or more Halbach arrays, one or more rotation mechanisms can couple one or more rotation mechanisms to all of the magnets in each array. Then, the rotating mechanism 530 can rotate the magnets 511 to 518 by about 90 degrees by sequentially changing the rotating direction of the magnets 511 to 518 in the array. When the rotation is observed from the lower end 527 of the chucking surface 522 as an example in which the rotation direction from the _first direction 511 _{1 to} 518 ₁ to the second direction 511 _{2 to 5} 18 ₂ is successively changed, the magnet 511 is anticlockwise. It can rotate around, and when observing the rotation from the lower end 527, the magnet 512 can rotate clockwise. To return the magnets 511-518 to a chucking state, the rotating mechanism 530 (1) reverses the rotation by 90 degrees to return each magnet to its first orientation 511 ₁ -518 ₁ (2) each magnet Continue to rotate 511-518 one after another 90 degrees to create a new chucking orientation, or (3) continue to rotate another 270 degrees sequentially in the same direction with respect to each magnet 511-518 each The magnets 511-518 are returned to their first orientations 511 ₁ -518 ₁ . In some embodiments, fewer than all of the magnets 511-518 are rotated to dechuck the mask.

FIG. 5C shows the magnets 511-518 arranged in another de-chucking state, and in the Halbach array 510, all odd numbered magnets are fixed in the first direction 511 ₁ 513 ₁ 515 ₁ 517 ₁ is, all the even-numbered magnets is changed to the third orientation _{512 3,} 514 _3, 516 3, 518 _3. Each magnet 511-518 has an N pole oriented in one of four directions with respect to the chucking surface 522. All odd numbered magnets are arranged in the first direction 511 ₁ , 513 ₁ , 515 ₁ , 517 ₁ and all even numbered magnets are arranged in the third direction 512 ₃ , 514 ₃ , 516 ₃ , 518 ₃ Each outwardly facing magnet (eg, a magnet 513 having a first pole (eg, its N pole facing outward toward chucking surface 522)) is an outward facing magnet (eg, a magnet 513) adjacent to one or two other magnets (eg, magnets 512, 514) having opposite magnetic poles (eg, south poles of magnets 512, 514) facing each other. This orientation can result in a reduced or near zero magnetic field directed out of the chucking surface 522 to dechuck the mask.

Orientation ₅₁₂ 1 faces the first even-numbered _magnets, 514 _1, 516 1, 518 ₁ from the third orientation _{512 3,} 514 _3, 516 3, 518 to change to _3, the even rotation mechanism 530 It may be coupled to only the magnet of. The rotation mechanism 530 can then rotate each even numbered magnet 512, 514, 516, 518 by approximately 180 degrees. In order to return the magnets 511 to 518 to the chucking state, the rotation mechanism 530 reverses the rotation by 180 degrees with respect to the even numbered magnets 512, 514, 516, 518, or further rotates by 180 degrees in the same direction. You can continue. In some embodiments, the odd magnets are rotated and the even magnets remain in the first orientation.

  6A-6B illustrate frontal schematic views of a magnetic chuck 610 including a plurality of Halbach arrays 611-614 arranged in series, according to one embodiment. Each Halbach array 611-614 includes a plurality of magnets 601-608. In some embodiments, each Halbach array 611-614 can extend from a first end 625 of the magnetic chuck 610 to a second end 626 of the magnetic chuck 610. The magnetic chuck 610 includes a chucking surface 622, which may be similar to the chucking surface 412 described with reference to FIG. In some embodiments, magnets 601-608 each have a cylindrical shape, and the height of the cylinder is substantially perpendicular to chucking surface 622, or the height of the cylinder is at chucking surface 622. The permanent magnet may be substantially parallel to one of the ends (e.g., end 625). In some embodiments, the cylinders can be arranged at other orientations with respect to the chucking surface 622 or end (eg, end 625). Other embodiments can have magnets 601-608 in the form of rods, blocks, or tubes (e.g., rectangular tubes).

  Although the chucking surface 622 is shown to be transparent to indicate the orientation of the magnets 601-608 relative to the chucking surface 622, such transparency is not required. The magnets 601-608 can be recessed relative to the chucking surface 622, similar to the Halbach arrays 406a-406j illustrated recessed from the chucking surface 412 of FIG.

Figure 6A shows a first orientation ₆₀₁ 1-608 magnets 601-608 positioned on chucked with a magnet 601 to 608 in each Halbach array 611-614 arranged in _one. This orientation produces a strong magnetic field directed out of the chucking surface 622 to enable the mask to be chucked. The mask can have features similar to the mask described above (eg, mask 132a, 132b, or 430).

  The magnetic chuck 610 can further include one or more rotation mechanisms (not shown) similar to the rotation mechanism 530 shown in FIG. One or more rotational mechanisms can be coupled at least to the magnets in each Halbach array 611-614 having an N-pole oriented in two of the four directions that the N-poles of each magnet 601-608 oppose. . In some embodiments, the magnetic chuck 610 includes one rotation mechanism that rotates the corresponding magnets 601-608 in each Halbach array 611-614 in unison. Connecting rods or other connections can be used to ensure that the corresponding magnets rotate in unison. In other embodiments, a portion of the Halbach array 611-614 is in a chucking state, and a portion of the Halbach array 611-614 is in a de-chucking state or in an intermediate state, each rotation being a separate rotation A mechanism can be used. In embodiments using one rotation mechanism or separate rotation mechanisms for each Halbach array 611-614, rotation of each magnet coupled to the rotation mechanism is the rotation of the rotation discussed with reference to the magnetic chuck 504 above. Similar to the offset, it can be offset from the center to the edge, from the edge to the center or the edge.

  In some embodiments, the rotational axis of the magnet is parallel to one of the ends (e.g., end 625) of the chucking surface 622 and coupled to one or more rotational mechanisms to achieve rotation. Gears similar to the gears 541 to 548 can be used. In another embodiment, the axes of rotation of the magnets 601-608 are perpendicular to the chucking surface 622.

  In yet another embodiment, the rotation of each magnet 601-608 of each Halbach array 611-614 can be individually controlled, and additional rotation sequences can be searched. For example, each magnet 601-608 of each Halbach array 611-614 can be coupled to a separate actuator (e.g., a separate servo or a separate pneumatic actuator).

6B is in each Halbach array 611-614, remains all the odd-numbered magnets of the first orientation _{601 1,} 603 _1, 605 1, 607 _1, all even-numbered magnets of the second indicating the direction _{602 2,} 604 _2, 606 2, 608 ₂ magnets 601-608 positioned on dechucking state changes. Having the first direction of odd numbered magnets and the second direction of even numbered magnets causes the magnetic field directed out of the chucking surface 622 to be canceled or close to zero and to dechuck the mask Can.

To change the even-numbered orientation of the magnet 1 a first orientation _612, 614 _1, 616 1, 618 ₁ from the second orientation _{612 2,} 614 _2, 616 2, 618 to _2, one or more of the rotating mechanism 630 May be coupled to even numbered magnets only. The one or more rotation mechanisms can then rotate each even numbered magnet 612, 614, 616, 618 about 180 degrees. In order to return the magnets 601-608 to chucking, the one or more rotation mechanisms reverse the rotation 180 degrees relative to the even numbered magnets 612, 614, 616, 618, or further rotate in the same direction. It can last 180 degrees. In some embodiments, the odd magnets are rotated and the even magnets remain in the first orientation. The magnetic mask 610, as described with reference to FIG. 5B above, of the magnets 601-608 in one or more of the Halbach arrays 611-614, to change from chucking to de-chucking. It could be equally operable to rotate everything about 90 degrees.

  In contrast to one Halbach sequence, multiple Halbach sequences can be used to provide greater operational flexibility. For example, if separate rotation mechanisms are used for different Halbach arrangements, some Halbach arrangements can be in the chucking state, the dechucking state, or in an intermediate state. Separate control may be provided for each rotation mechanism to allow individual control when each arrangement is switched to chucking, dechucking, or in an intermediate state. Furthermore, multiple Halbach arrangements can enable magnets of varying magnetic strength to be used to clamp different areas of the mask. For example, to clamp the center of the mask with greater force, a stronger magnet can be used for magnets closer to the center of the mask, relative to the strength of the magnets farther from the center of the mask.

  FIG. 7 shows a schematic top view of a magnetic chuck 710 that includes a Halbach array 720, according to one embodiment. In contrast to magnetic chucks 504 and 610, which use rotation to change between chucking and dechucking states, magnetic chuck 710 changes the position of movable magnets 711-719 relative to fixed magnets 721-728. Adjust the strength of the magnetic field. When the movable magnets 71 1 -719 are placed in place between the fixed magnets 721-728, a Halbach array is formed, creating a strong magnetic field directed out of the chucking surface 732 to enable the mask 730 to chuck. To dechuck mask 730, the moveable magnets can be moved away from fixed magnets 721-728 and chucking surface 732. One or more actuators 704 can be used to change the position of the moveable magnets 711-719 individually, in groups, or all of the magnets 711-719 together. In some embodiments, the mask 730 slides the moveable magnets 711-719 away from the fixed magnets 721-729 as well as the chucking surface 732 and then moves each moveable magnet 711-719 to the next fixed magnet 721. Dechucking can be done by repositioning adjacent to 719. For example, the moveable magnets 712 adjacent to the chucked stationary magnets 721, 722 may be repositioned between the de-chucked stationary magnets 722, 723. Repositioning all of the moveable magnets as well as the moveable magnets 712 results in a reduced or near zero magnetic field directed out of the chucking surface 732, making the mask 730 dechuckable.

  In some embodiments, a flexible plate 702 can be used to move the moveable magnets 711-719. The flexible plate 702 is flexible so as to gradually chuck the mask 730 from the center of the mask 730 to the end of the mask 730 while the movable magnets 71 1 to 7 19 are moved to the chucking position. The moveable magnets 711-719 at the center of the plate 702 can be curved inwardly to be closer to the chucking surface 732. The inwardly curved flexible plate also allows the mask 730 to be gradually dechucked in an end-to-center sequence. In other embodiments, the flexible plate 702 can be curved outward so that the moveable magnets 711-719 at the center of the flexible plate 702 are farthest away from the chucking surface 732 and gradually from the end It has the opposite effect of chucking to the center and gradually dechucking from the center to the edge.

  Referring to FIGS. 2, 5A-5C, and 8, a method 800 of chucking a mask to a substrate in a processing chamber is described. Although this method is described with reference to the system of FIGS. 5A-5C, those skilled in the art have disclosed any magnetic chucks configured to perform the steps of the method in any order. It will be understood that it is within the scope of the embodiments. Method 800 is described as being performed within processing chamber 240 using substrate carrier 150a and magnetic chuck 504 in place of first magnetic chuck 151a. Although method 800 is described using magnetic chuck 504 and substrate carrier 150a in processing chamber 240, method 800 may be performed with other magnetic chucks, in conjunction with other substrate carriers, or in other processing chambers You can also For example, the method 800 can also be performed using the magnetic chuck 610 and the substrate carrier 300 in the processing chamber 110.

  At block 802, the first substrate 121a is disposed on the substrate support surface of the substrate carrier 150a and is transported into the processing chamber 240.

  At block 804, the mask is chucked to the substrate. The mask can be chucked according to any of the embodiments described herein. In some embodiments, the mask can be chucked as soon as the substrate is in place in the processing chamber that does not require rotation or movement of the magnets in the Halbach array. In other embodiments, at least some of the magnets in the Halbach array can be rotated with or without chucking to chuck the mask. For example, at least some of the plurality of magnets 511-518 disposed in the Halbach array 510 in the magnetic chuck 504 can be rotated. This rotation can be performed with the magnetic chuck 504 in close proximity to the substrate support surface to chuck the mask 132a to the substrate 121a disposed on the substrate carrier 150a. Alternatively, this rotation may occur with the magnetic chuck 504 further away from the substrate support surface 150a to chuck the mask 132a to the substrate 121a disposed on the substrate carrier 150a, and then the magnetic chuck Can be moved closer to the substrate support surface. In some embodiments, magnets 511-518 are all rotated approximately 90 degrees, as described above with reference to FIG. 5B. In another embodiment, the magnets in the plurality of magnets 511-518 oriented in two of the four directions of the Halbach array 510 may be rotated approximately 180 degrees as described above with reference to FIG. 5C. Can.

  In embodiments having a magnetic chuck (eg, magnetic chuck 610) having a plurality of Halbach arrangements, the magnets in the plurality of Halbach arrangements may then be rotated at block 804. In some embodiments, at least some of the plurality of magnets 511-518 that are magnets closer to the center of the magnetic chuck 504 (e.g., the center 524 of the chucking surface 522) are ends of the magnetic chuck 504 (e.g., , Is rotated faster than the magnet closer to the end 525 of the chucking surface 522). The rotation of the magnet can be offset in a number of ways as described above (e.g., offset from center to end, end to center, or end to end). In embodiments using magnetic chuck 710, moveable magnets 711-719 are placed in place between fixed magnets 721-728 to generate a strong magnetic field directed out of chucking surface 732 and mask 730 onto the substrate Make it possible to chuck. In embodiments using an electromagnet, chucking may be achieved by energizing the electromagnet with a suitable current, so movement or rotation of the magnet may not be required.

  At block 806, a layer is deposited on the substrate 121a through the mask 132a. An evaporation source 230 can be used to deposit a layer on the substrate 121a. The linear guides 224 can provide translational movement of the evaporation source 230 so that layers can be deposited on different areas of the substrate 121a. The one or more Halbach array magnets can be rotated to adjust the chucking force across different areas of the substrate during deposition. It is contemplated that the layer can be deposited through the mask using chemical vapor deposition or other deposition processes.

  At block 808, the mask is dechucked from the substrate. The mask can be dechucked according to any of the embodiments described herein. In some embodiments, at least some of the magnets in the Halbach array can be rotated or unrotated to dechuck the mask. For example, at least some of the plurality of magnets 511-518 disposed in the Halbach array 510 in the magnetic chuck 504 may be rotated to dechuck the mask 132a from the substrate 121a disposed on the substrate carrier 150a. it can. In some embodiments, magnets 511-518 are all rotated approximately 90 degrees, as described above with reference to FIG. 5B. In another embodiment, the magnets in the plurality of magnets 511-518 oriented in two of the four directions in the Halbach array 510 are rotated approximately 180 degrees as described above with reference to FIG. 5C. be able to.

  In embodiments having a magnetic chuck (eg, magnetic chuck 610) having a plurality of Halbach arrangements, the magnets in the plurality of Halbach arrangements can then be rotated at block 806. In some embodiments, at least some of the plurality of magnets 511-518 that are magnets closer to the center of the magnetic chuck 504 (e.g., the center 524 of the chucking surface 522) are ends of the magnetic chuck 504 (e.g., , Is rotated faster than the magnet closer to the end 525 of the chucking surface 522). The rotation of the magnet can be offset in a number of ways as described above (e.g. offset rotation from center to end, end to center, or end to end). In embodiments using a magnetic chuck 710, the moveable magnets 711-719 are removed from the position between the fixed magnets 721-728, resulting in a cancellation or reduced magnetic field directed out of the chucking surface 732 The mask 730 can be dechucked from the substrate. In embodiments using electromagnets, dechucking can be achieved by de-energizing the electromagnets, reducing the current supplied to the electromagnets, or changing the direction of the current applied to at least some of the electromagnets So, movement or rotation of the magnet may not be required.

  After dechucking the mask from the substrate at block 808, the substrate may be removed from the chamber and the process may be repeated for a new substrate. At least some magnets in the Halbach array are located in place in the processing chamber if at least some magnets in the Halbach array are moved to dechuck the mask from the substrate at block 808 Can be moved as described above to regenerate the chucking state.

  Each of the magnetic chucks 404, 504, 610, 710 can include more or less magnets than shown in the figures. Embodiments that show only one Halbach array (eg, magnetic chucks 504, 710) can include additional Halbach arrays. Embodiments that include multiple Halbach arrays (eg, magnetic chucks 404, 610) can include more or less Halbach arrays than the number of arrays shown in the figures.

  Each of the magnetic chucks 404, 504, 610, 710 can be fully functional in each of the processing chambers 110, 240 independently of any substrate carrier (eg, carrier 402), and in all of the chambers It includes the functionality of all of the components (eg, alignment units 212a, 212b, valves 205, 207, masks 132a, 132b, and mask frames 131a, 131b). Alignment units 212a, 212b align each magnetic chuck 404, 504, 610, 710 with each substrate carrier 150a, 150b, 300, 402, as opposed to an embodiment where the magnetic mask chuck is not part of the carrier Align the substrate with the respective mask. Each of the magnetic chucks 404, 504, 610, 710 can be used with each of the substrate carriers 150a, 150b, 300, 402 as a separate device or integrated with each of the carriers. In embodiments where the magnetic chuck is integrated with the substrate carrier, the plurality of magnets in the one or more Halbach arrays may be relative to a chucking surface (eg, chucking surface 412) or a substrate support surface (eg, substrate support) It can be oriented with respect to the surface 313). In some embodiments, the chucking surface and the substrate support surface can be the same surface. Each of the magnetic chucks 404, 504, 610, 710 can also function with a positioning device (e.g., an optional actuator 410). In embodiments where the magnetic chuck is separate from the substrate carrier, the magnetic chuck can remain as a substrate in the processing chamber and / or the substrate carrier is transported in and out of the processing chamber.

Each of the magnetic chucks 404, 504, 610, 710 can have a chuck body (e.g., a chuck body 408) made of an insulating material (e.g., a dielectric material or a ceramic material). Preferred examples of ceramic materials or dielectric materials are polymers (eg, polyimide), silicon oxide materials (eg, quartz or glass), aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), yttrium-containing material, oxidized Examples include yttrium (Y ₂ O ₃ ), yttrium-aluminum-garnet (YAG), titanium oxide (TiO), titanium nitride (TiN), silicon carbide (SiC) and the like. Optionally, each of the chuck bodies may be a metal or a metal body. In some embodiments, the chuck body can be made of ferromagnetic or nonmagnetic material. In some embodiments, the chuck body can also be an electrostatic chuck body.

  Each of the magnetic chucks 404, 504, 610, 710 includes a Halbach array (eg, Halbach array 406a-406j), and all of the magnets in the Halbach array are ferromagnetic materials (eg, aluminum-nickel-cobalt (Alnico) , Rare earths, iron-chromium-cobalt, or a combination thereof). In other embodiments, all of the magnets in the Halbach arrays 406a-406j can be electromagnets. In still other embodiments, some of the magnets in Halbach arrays 406a-406j may be permanent magnets, and some of the magnets in Halbach arrays 406a-406j may be electromagnets.

  In embodiments using an electromagnet, a controller and a power supply can be used to energize the electromagnet. The rotation mechanism can be unnecessary for the electromagnet. In some embodiments, the polarity of the electromagnet can be easily switched by reversing the current flowing through the electromagnet, changing the embodiment using the electromagnet between the chucking state and the dechucking state In order to make the polarity of some of the magnets 180 degrees switchable. An advantage of some embodiments of magnetic chucks that use electromagnets can be the lack of moving parts (e.g., rotating magnets) that can generate dust and cause additional maintenance. Another advantage of the magnetic chuck embodiment using electromagnets is that each electromagnet can be individually energized and de-energized by a controller that allows accurate control of chucking and dechucking across the chucking surface. .

  The magnetic chuck described herein enables the mask to be magnetically clamped to the substrate, which can improve product quality and reduce equipment costs. By magnetically clamping the mask, a lower clamping force can be developed evenly distributed over the target area of the substrate compared to a mechanical clamping system that concentrates higher forces on the position of the mechanical clamp. . This lower evenly distributed clamping force can prevent contact contamination or physical damage to the substrate often caused by the concentration used by mechanical clamping.

  Magnetic chucks using the Halbach arrangement provide additional advantages as compared to other embodiments of magnetic chucks. A Halbach-oriented magnet can generate a higher magnetic force to clamp the mask than the same magnet oriented in other classical configurations (e.g., alternating NS configurations). This can make the magnets contained in the magnetic chuck smaller or smaller, not only reducing the size of the magnetic chuck, but also saving equipment costs.

  Furthermore, as mentioned above, the Halbach-oriented magnets are easily rotated to a chucking state that produces a strong magnetic field for chucking the mask, and then towards the mask that enables the mask to be chucked. It can be rotated into a de-chucking state that results in a directed or reduced or near zero magnetic field. In other embodiments of magnetic chucks that do not use the Halbach arrangement, it is necessary to increase or decrease the distance between the magnet and the mask in order to chuck and dechuck the mask. Increasing or decreasing this distance results in additional equipment costs due to the additional space required in the magnetic chuck or the additional space and equipment in the chamber for moving the mask or magnetic chuck. The rotation of the Halbach magnet can make the footprint of the magnetic chuck smaller, which not only saves the cost of the equipment, but magnetic chucks using the Halbach array are more existing than other magnetic chucks Enable to be used in the processing chamber of Furthermore, in embodiments using permanent magnets, power is used only to rotate some of the magnets by about 180 degrees or all of the magnets by about 90 degrees, so to chuck and dechuck the mask. Power requirements are very low.

  The magnetic chuck 710 does not rotate the magnet to change from chucking to dechucking, but the distance that the magnet must move is much smaller than the distance that the magnet needs to move in the other magnetic chucks . The moving magnet in the magnetic chuck 710 only needs to move far enough to be able to slide past the stationary magnet when the moving magnet is repositioned in the dechucking direction, so the distance Is smaller.

  While the above is directed to exemplary embodiments, other and further embodiments can be made without departing from the basic scope of the present invention, the scope of which is based on the following claims. It will be determined.

Claims (15)

A processing system for chucking a mask to a substrate, wherein
A processing chamber,
A magnetic chuck disposed in the processing chamber, the magnetic chuck being
With the chucking surface,
A plurality of magnets oriented in one or more Halbach orientations with respect to the chucking surface, each magnet having a north pole oriented in one of four directions;
A magnetic chuck comprising: one or more rotation mechanisms coupled to change a direction of at least one N pole of the magnets.   The one or more rotation mechanisms are coupled to the magnet having a north pole oriented in two of the four directions, wherein the two of the four directions differ by about 180 degrees. Processing system.   The processing system of claim 1, wherein the one or more rotation mechanisms are coupled to all of the plurality of magnets in the one or more Halbach arrays.   The processing system according to claim 3, wherein the plurality of magnets comprises magnetic tubes having long dimensions parallel to the rotation axis of the magnets each coupled to one or more rotation mechanisms.   The processing system of claim 1, wherein the one or more rotation mechanisms are operable to cause a first magnet of the plurality of magnets to rotate faster than a second magnet of the plurality of magnets.   6. The processing system of claim 5, wherein the first magnet is closer to the end of the chucking surface than the second magnet.   The processing system of claim 1, wherein the one or more Halbach arrays include a series of Halbach arrays, each array extending from a first end of the magnetic chuck to a second end of the magnetic chuck. A substrate carrier for use in a processing chamber, comprising:
A support base operable to move the substrate carrier into and out of the processing chamber;
An electrode assembly disposed on the support base for electrostatically chucking the substrate to the substrate support surface, the substrate support surface being disposed on the electrode assembly;
A magnetic chuck integrated with the support base, the magnetic chuck being
A plurality of magnets oriented in one or more Halbach orientations relative to the substrate support surface, each magnet having a north pole oriented in one of four directions;
A magnetic chuck comprising: one or more rotation mechanisms coupled to change a direction of at least one N pole of the magnets.   9. The system of claim 8, wherein one or more rotational mechanisms are coupled to the magnet having an N pole oriented in two of the four directions, wherein the two of the four directions differ by about 180 degrees. Substrate carrier.   9. The substrate carrier of claim 8, wherein the plurality of magnets comprises magnetic tubes each having a long dimension parallel to the rotational axis of the magnets coupled to one or more rotational mechanisms.   9. The substrate carrier of claim 8, wherein the one or more rotation mechanisms are operable to rotate a first of the plurality of magnets faster than a second of the plurality of magnets. A method of chucking a mask to a substrate in a processing chamber, comprising:
Transporting the substrate disposed on the substrate support surface of the substrate carrier into the processing chamber;
Chucking the mask onto the substrate;
Depositing a layer on the substrate through the mask;
Moving at least some of the plurality of magnets disposed in the one or more Halbach arrays in the magnetic chuck proximate the substrate support surface to dechuck the mask from the substrate disposed on the substrate carrier How to include it. The step of moving at least some of the plurality of magnets is
13. The method of claim 12, comprising rotating at least some of the magnets in the plurality of magnets about 180 degrees. The step of moving at least some of the plurality of magnets is
The method of claim 12, comprising rotating all of the magnets by about 90 degrees.   The method of claim 12, comprising moving at least some of the plurality of magnets to chuck a mask onto a substrate disposed on a substrate carrier.