WO2018180417A1 - スクライブ加工方法及びスクライブ加工装置 - Google Patents

スクライブ加工方法及びスクライブ加工装置 Download PDF

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Publication number
WO2018180417A1
WO2018180417A1 PCT/JP2018/009450 JP2018009450W WO2018180417A1 WO 2018180417 A1 WO2018180417 A1 WO 2018180417A1 JP 2018009450 W JP2018009450 W JP 2018009450W WO 2018180417 A1 WO2018180417 A1 WO 2018180417A1
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WO
WIPO (PCT)
Prior art keywords
scribe line
glass substrate
line
laser
forming step
Prior art date
Application number
PCT/JP2018/009450
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
弘義 林
郁祥 中谷
Original Assignee
三星ダイヤモンド工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三星ダイヤモンド工業株式会社 filed Critical 三星ダイヤモンド工業株式会社
Priority to JP2019509179A priority Critical patent/JP7456604B2/ja
Priority to CN201880022170.6A priority patent/CN110475754B/zh
Priority to KR1020197029366A priority patent/KR20190129914A/ko
Publication of WO2018180417A1 publication Critical patent/WO2018180417A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/033—Apparatus for opening score lines in glass sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam

Definitions

  • the present invention relates to a scribing method and a scribing apparatus, and more particularly, to a method and apparatus for forming a scribe line by intermittently performing internal processing of a glass substrate by a pulse using a laser device in a plane direction.
  • Laser processing is known as a method for scribing a glass substrate.
  • laser processing for example, an infrared picosecond laser is used.
  • a method of forming a scribe line by forming a plurality of laser filaments by intermittently performing internal processing with a pulse in a plane direction by a laser is known (see, for example, Patent Document 1).
  • the focused laser beam is composed of pulses having energy and pulse duration selected to create a filament in the substrate.
  • a scribe line for cleaving the substrate is formed by the plurality of filaments.
  • An object of the present invention is to form a scribe line on a glass substrate by laser processing so as to facilitate later separation.
  • a scribing method is a method of scribing a glass substrate, and includes the following steps. ⁇ Scribe line formation process to form scribe lines by intermittently processing the glass substrate by pulses using a laser device in the plane direction ⁇ After the scribe line formation process, the inside of the glass substrate by pulses using a laser device Break line forming step of forming a break line along the scribe line by intermittently performing processing in the plane direction.
  • the break line when the break line is formed, inside the glass substrate, the processed portion The structure collapses and an impact acts on the scribe line. Due to this impact, a crack is generated or propagates in the scribe line. As a result, the scribe line can be easily separated.
  • the break line may be formed at a position different from the scribe line in plan view. In this method, by setting so that the collapse of the structure does not reach the scribe line, the impact on the scribe line can be sufficiently increased.
  • the break line may be formed substantially parallel to the scribe line. In this method, it is possible to apply an impact to the scribe line as a whole.
  • the condensing state may be different between the scribe line forming step and the break line forming step.
  • the break line can be formed in a light-collecting state that can give a sufficient impact to the scribe line in the break line forming step.
  • the light collection state may be changed by lens operation.
  • the manufacturing cost is reduced.
  • the light collection state may be changed by spatial light modulation.
  • the scribe line and the break line can be processed with one laser device, the manufacturing cost is reduced.
  • a scribing apparatus includes a laser apparatus and a control unit that causes the laser apparatus to execute the scribing method.
  • a scribe line when a scribe line is formed on a glass substrate by laser processing, it can be processed so as to facilitate later separation.
  • the schematic diagram of the laser processing apparatus of 1st Embodiment of this invention The top view of the glass substrate of 1st Embodiment.
  • the cross-sectional photograph along the scribe line of the Example The cross-sectional photograph along the scribe line of the Example.
  • FIG. 1 shows an overall configuration of a laser processing apparatus 1 for cutting a glass substrate according to an embodiment of the present invention.
  • FIG. 1 is a schematic diagram of a laser processing apparatus according to a first embodiment of the present invention.
  • the laser processing apparatus 1 is an apparatus for fully cutting the glass substrate G.
  • the glass substrate G is soda glass and has a thickness of, for example, 1.8 mm and is in a range of 1.1 to 3 mm.
  • the laser processing apparatus 1 includes a laser apparatus 3.
  • the laser device 3 includes a laser oscillator 15 for irradiating the glass substrate G with laser light, and a laser control unit 17.
  • the laser oscillator 15 is, for example, a picosecond laser having a wavelength of 340 to 1100 nm.
  • the laser control unit 17 can control the driving of the laser oscillator 15 and the laser power.
  • the laser device 3 includes a transmission optical system 5 that transmits laser light to a mechanical drive system described later.
  • the transmission optical system 5 includes, for example, a condenser lens 19, a plurality of mirrors (not shown), a prism (not shown), and the like.
  • the laser processing apparatus 1 has a drive mechanism 11 that changes the condensing angle of laser light by moving the position of the lens in the optical axis direction.
  • the laser processing apparatus 1 has a processing table 7 on which a glass substrate G is placed.
  • the processing table 7 is moved by the table driving unit 13.
  • the table driving unit 13 has a moving device (not shown) that moves the processing table 7 in the horizontal direction with respect to the bed (not shown).
  • the moving device is a known mechanism having a guide rail, a motor, and the like.
  • the laser processing apparatus 1 includes a control unit 9.
  • the control unit 9 includes a processor (for example, CPU), a storage device (for example, ROM, RAM, HDD, SSD, etc.) and various interfaces (for example, an A / D converter, a D / A converter, a communication interface, etc.). It is a computer system.
  • the control unit 9 performs various control operations by executing a program stored in the storage unit (corresponding to a part or all of the storage area of the storage device).
  • the control unit 9 may be composed of a single processor, but may be composed of a plurality of independent processors for each control.
  • the control unit 9 can control the laser control unit 17.
  • the control unit 9 can control the drive mechanism 11.
  • the control unit 9 can control the table driving unit 13.
  • the control unit 9 is connected to a sensor (not shown) for detecting the size, shape and position of the glass substrate G, sensors and switches for detecting the state of each device, and an information input device.
  • FIG. 2 is a plan view of the glass substrate of the first embodiment.
  • FIG. 3 is a schematic cross-sectional view of a glass substrate.
  • FIG. 4 is a plan view of a glass substrate for explaining the state of pulse processing.
  • FIG. 5 is a schematic plan view of the glass substrate in the scribe line forming step.
  • FIG. 6 is a schematic cross-sectional view of the glass substrate in the break line forming step.
  • the scribing method includes the following steps.
  • a scribe line forming step for forming the scribe line 31 by intermittently performing internal processing of the glass substrate G by the pulse L1 using the laser device 3 in the plane direction (particularly, refer to FIGS. 3 to 5).
  • the break line formation step (forms the break line 33 along the scribe line 31 by intermittently performing internal processing of the glass substrate G with the pulse L2 using the laser device 3 in the plane direction)
  • a processing trace extending along the optical axis is formed inside the glass substrate G in the laser irradiation portion.
  • the processing trace extends between the surfaces of the glass substrate G.
  • a partial processing mark is formed inside the glass substrate G in the laser irradiation portion.
  • the scribe line 31 is formed in an annular shape
  • the break line 33 is formed in an annular shape outside the scribe line 31.
  • the break line may be formed inside the scribe line.
  • the scribe line and the break line may have a shape other than the annular shape.
  • the pitch D1 of the pulse irradiation position S1 constituting the scribe line 31 is in the range of 1 to 6 ⁇ m.
  • the pitch D2 of the pulse irradiation position S2 constituting the break line 33 is shorter than the pitch D1.
  • the pitch D2 is in the range of 0.5 to 3 ⁇ m.
  • the break line 33 is formed at a position different from the scribe line 31 in plan view. Therefore, by setting so that the collapse of the structure does not reach the scribe line 31, the impact on the scribe line 31 can be sufficiently increased by forming the break line 33.
  • the break line 33 is formed substantially parallel to the scribe line 31. Therefore, it is possible to give an impact to the scribe line 31 as a whole by forming the break line. However, a part or all of them may not necessarily be parallel. Moreover, the break line does not need to correspond to all of the scribe lines, and may be formed corresponding to only the necessary portions of the scribe lines.
  • the reason why the scribe line 31 can be easily separated by processing the break line 33 is as follows. That is, when the break line 33 is formed beside the scribe line 31, the structure of the processed part is collapsed and an impact is applied to the scribe part inside the glass substrate G. The impact causes a crack in the scribe portion, and the scribe line 31 can be easily separated.
  • a distance D3 between the scribe line 31 and the break line 33 is, for example, 45 ⁇ m.
  • the distance D3 is preferably in the range of 5 to 70 ⁇ m, more preferably 30 to 60 ⁇ m.
  • the distances D3 may not all be the same, that is, break lines may be formed at a plurality of different distance positions with respect to the scribe line. If the distance is too short, the range to which the impact is applied becomes narrow, and the collapse of the structure reaches the scribe line 31, so that a part of the scribe is collapsed and the impact applied to the scribe line 31 is reduced. Therefore, the separation of the scribe line 31 becomes hard. If the distance is too long, the range of impact is too wide and the impact applied to the scribe line 31 is reduced.
  • the condensing state is different between the scribe line forming step and the break line forming step.
  • the break line 33 can be formed in a condensing state that can give a sufficient impact to the scribe line 31 in the break line forming step.
  • the processing conditions of the scribe line 31 are as follows. 1) Pulse energy: 400 ⁇ J (preferably 200 ⁇ J or more) 2) Processing pitch: 4 ⁇ m (preferably in the range of 1 to 6 ⁇ m)
  • the beam waist of the pulse L1 is inside the glass substrate G.
  • a processing mark extending from the upper surface to the lower surface of the glass substrate G is formed.
  • the processing conditions of the break line 33 are as follows. 1) Pulse energy: 150 ⁇ J (preferably 100 ⁇ J or more) 2) Processing pitch: 1 ⁇ m (preferably in the range of 0.5 to 3 ⁇ m)
  • Pulse energy 150 ⁇ J (preferably 100 ⁇ J or more)
  • Processing pitch 1 ⁇ m (preferably in the range of 0.5 to 3 ⁇ m)
  • the focal point of the pulse L2 is in the middle in the thickness direction of the glass substrate G, and compared with the processing conditions of the scribe line 31, the pulse energy is small and the condensing angle is large.
  • a partial processing mark is formed in the middle of the glass substrate G in the thickness direction.
  • the condensing state is changed by lens operation by the drive mechanism 11 in the scribe line forming step and the break line forming step. Therefore, since the scribe line 31 and the break line 33 can be processed by one laser device 3, the manufacturing cost is reduced.
  • FIG. 7 is a cross-sectional photograph taken along the scribe line of the reference example.
  • 8 and 11 are cross-sectional views along the scribe line of the comparative example.
  • 9 to 11 are cross-sectional photographs taken along the scribe line of the example.
  • FIG. 7 shows a reference example, in which only a scribe line is formed. That is, the break line is not formed, and therefore, the processing trace resulting from the break line is not seen.
  • FIG. 8 shows a comparative example, in which the distance D3 is 0 ⁇ m. In this case, the collapse of the structure has reached the scribe line, and a part of the scribe line has collapsed. As a result, it is difficult to divide the scribe line.
  • FIG. 9 shows the first embodiment, and the distance D3 is 35 ⁇ m. A processing mark generated by the break line formation appears on the cut surface. The plurality of processing marks extend long in the vertical direction.
  • FIG. 10 shows a second embodiment, in which the distance D3 is 45 ⁇ m. A processing mark generated by the break line formation appears on the cut surface. The plurality of processing marks are shorter in the vertical direction than in the first embodiment.
  • FIG. 11 shows a third embodiment, and the distance D3 is 50 ⁇ m. In this case, the processing trace generated by the break line formation does not appear on the cut surface.
  • FIG. 12 is a schematic diagram of a laser processing apparatus according to the second embodiment.
  • the laser processing apparatus 1 ⁇ / b> A has a spatial light modulator 21 that modulates the laser light emitted from the laser apparatus 3.
  • the spatial light modulator 21 is, for example, a reflection type, and may be a reflection type liquid crystal (LCOS: Liquid Crystal on Silicon) spatial light modulator (SLM: Spatial Light Modulator).
  • LCOS Liquid Crystal on Silicon
  • SLM Spatial Light Modulator
  • the laser processing apparatus 1 ⁇ / b> A has a drive unit 23.
  • the drive unit 23 applies a predetermined voltage to each pixel electrode in the spatial light modulator 21 to display a predetermined modulation pattern on the liquid crystal layer, thereby causing the spatial light modulator 21 to modulate the laser light as desired.
  • the modulation pattern displayed on the liquid crystal layer includes, for example, the position where the processing mark is to be formed, the wavelength of the laser beam to be irradiated, the material of the processing target, and the refractive index of the transmission optical system 5 and the processing target. Is derived in advance based on the above and stored in the control unit 9. In this method, since the scribe line and the break line can be processed with one laser device 3, the manufacturing cost is reduced.
  • the pitch D1 of the pulse irradiation position S1 constituting the scribe line 31 is in the range of 1 to 6 ⁇ m.
  • the pitch D2 of the pulse irradiation position S2 which comprises the break line 33 is the same grade as the pitch D1. Specifically, the pitch D2 is in the range of 1 to 6 ⁇ m.
  • the distance D3 between the scribe line 31 and the break line 33 is in the range of 5 to 300 ⁇ m.
  • the above range is preferably, for example, 30 to 60 ⁇ m or 100 to 190 ⁇ m.
  • the distances D3 may not all be the same, that is, break lines may be formed at a plurality of different distance positions with respect to the scribe line.
  • the processing conditions of the scribe line 31 are as follows. 1) Pulse energy: 667 ⁇ J 2) Processing pitch: 4 ⁇ m (processing speed is 600 mm / s, repetition frequency is 150 kHz) In this case, the beam waist of the pulse L1 is inside the glass substrate G. As a result, a processing mark extending from the upper surface to the lower surface of the glass substrate G is formed.
  • the processing conditions of the break line 33 are as follows. 1) Pulse energy: 667200 ⁇ J 2) Processing pitch: 4 ⁇ m (processing speed is 600 mm / s, repetition frequency is 150 kHz)
  • Pulse energy 667200 ⁇ J 2
  • Processing pitch 4 ⁇ m (processing speed is 600 mm / s, repetition frequency is 150 kHz)
  • the focal point of the pulse L2 is in the middle in the thickness direction of the glass substrate G, and compared with the processing conditions of the scribe line 31, the pulse energy is small and the condensing angle is large.
  • a partial processing mark is formed in the middle of the glass substrate G in the thickness direction.
  • the same effect as that of the first embodiment can be obtained.
  • the scribe line and the break line are formed using the common laser device 3, but a dedicated laser device may be used.
  • a picosecond laser can be used for forming a scribe line
  • a picosecond or nanosecond laser can be used for forming a break line.
  • the scribe line and the break line are formed by irradiating the pulse laser.
  • the pulse laser group oscillated in the burst mode may be irradiated.
  • the present invention can be widely applied to a method and an apparatus for forming a scribe line by intermittently performing internal processing of a glass substrate by a pulse using a laser device in a plane direction.
  • Laser processing device 3 Laser device 5: Transmission optical system 7: Processing table 9: Control unit 11: Drive mechanism 13: Table drive unit 15: Laser oscillator 17: Laser control unit 19: Condensing lens 21: Spatial light modulation Device 23: Drive unit 31: Scribe line 33: Break line

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
PCT/JP2018/009450 2017-03-31 2018-03-12 スクライブ加工方法及びスクライブ加工装置 WO2018180417A1 (ja)

Priority Applications (3)

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JP2019509179A JP7456604B2 (ja) 2017-03-31 2018-03-12 スクライブ加工方法及びスクライブ加工装置
CN201880022170.6A CN110475754B (zh) 2017-03-31 2018-03-12 刻划加工方法和刻划加工装置
KR1020197029366A KR20190129914A (ko) 2017-03-31 2018-03-12 스크라이브 가공 방법 및 스크라이브 가공 장치

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JP2017-071342 2017-03-31
JP2017-072757 2017-03-31
JP2017071342 2017-03-31
JP2017072757 2017-03-31

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KR (1) KR20190129914A (ko)
CN (1) CN110475754B (ko)
TW (1) TW201841840A (ko)
WO (1) WO2018180417A1 (ko)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009072829A (ja) * 2007-09-21 2009-04-09 Icu Research & Industrial Cooperation Group 超短パルスレーザービームを利用した基板切断装置及びその切断方法
JP2015506902A (ja) * 2012-02-01 2015-03-05 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 非金属材料を分離するためのシステム及び方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6420678B1 (en) 1998-12-01 2002-07-16 Brian L. Hoekstra Method for separating non-metallic substrates
JP2007185664A (ja) * 2006-01-11 2007-07-26 Seiko Epson Corp レーザ内部スクライブ方法
WO2010139841A1 (en) * 2009-06-04 2010-12-09 Corelase Oy Method and apparatus for processing substrates
MY184075A (en) 2010-07-12 2021-03-17 Rofin Sinar Tech Inc Method of material processing by laser filamentation
JP5887928B2 (ja) * 2011-12-28 2016-03-16 三星ダイヤモンド工業株式会社 被加工物の分断方法および光学素子パターン付き基板の分断方法
JP5991860B2 (ja) * 2012-06-19 2016-09-14 三星ダイヤモンド工業株式会社 ガラス基板の加工方法
AT13206U1 (de) * 2012-07-17 2013-08-15 Lisec Maschb Gmbh Verfahren und Anordnung zum Teilen von Flachglas
CN102898013A (zh) * 2012-09-07 2013-01-30 东莞光谷茂和激光技术有限公司 一种紫外激光切割玻璃基板的方法
EP2781296B1 (de) * 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
CN103771694B (zh) * 2014-01-08 2017-03-08 合肥鑫晟光电科技有限公司 激光切割方法及激光切割系统
US9776906B2 (en) * 2014-03-28 2017-10-03 Electro Scientific Industries, Inc. Laser machining strengthened glass

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009072829A (ja) * 2007-09-21 2009-04-09 Icu Research & Industrial Cooperation Group 超短パルスレーザービームを利用した基板切断装置及びその切断方法
JP2015506902A (ja) * 2012-02-01 2015-03-05 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 非金属材料を分離するためのシステム及び方法

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JPWO2018180417A1 (ja) 2020-03-05
JP7456604B2 (ja) 2024-03-27
CN110475754B (zh) 2022-07-15
CN110475754A (zh) 2019-11-19
TW201841840A (zh) 2018-12-01
KR20190129914A (ko) 2019-11-20

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