WO2018173421A1 - 基板の研磨装置および研磨方法 - Google Patents

基板の研磨装置および研磨方法 Download PDF

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Publication number
WO2018173421A1
WO2018173421A1 PCT/JP2018/000233 JP2018000233W WO2018173421A1 WO 2018173421 A1 WO2018173421 A1 WO 2018173421A1 JP 2018000233 W JP2018000233 W JP 2018000233W WO 2018173421 A1 WO2018173421 A1 WO 2018173421A1
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WO
WIPO (PCT)
Prior art keywords
polishing
substrate
conditioning
polishing pad
partial
Prior art date
Application number
PCT/JP2018/000233
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English (en)
French (fr)
Japanese (ja)
Inventor
安田　穂積
小畠　厳貴
高橋　信行
卓 作川
Original Assignee
株式会社 荏原製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社 荏原製作所 filed Critical 株式会社 荏原製作所
Priority to US16/495,010 priority Critical patent/US20200269383A1/en
Priority to CN201880018928.9A priority patent/CN110461542A/zh
Priority to KR1020197028236A priority patent/KR102482181B1/ko
Priority to SG11201908381R priority patent/SG11201908381RA/en
Publication of WO2018173421A1 publication Critical patent/WO2018173421A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/06—Dust extraction equipment on grinding or polishing machines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a substrate polishing apparatus and a polishing method.
  • a processing apparatus has been used to perform various types of processing on a processing target (for example, a substrate such as a semiconductor substrate or various films formed on the surface of the substrate).
  • a processing target for example, a substrate such as a semiconductor substrate or various films formed on the surface of the substrate.
  • CMP Chemical Mechanical Polishing
  • the CMP apparatus includes a polishing unit for performing a polishing process on a processing target, a cleaning unit for performing a cleaning process and a drying process on the processing target, and a processing unit that delivers the processing target to the polishing unit and performs a cleaning process by the cleaning unit. And a load / unload unit that receives the dried processed object.
  • the CMP apparatus also includes a transport mechanism that transports the processing object in the polishing unit, the cleaning unit, and the load / unload unit. The CMP apparatus sequentially performs various processes such as polishing, cleaning, and drying while conveying a processing object by a conveyance mechanism.
  • the required accuracy of each process in the manufacture of semiconductor devices has already reached the order of several nanometers, and CMP is no exception.
  • the polishing and cleaning conditions are optimized in CMP.
  • the semiconductor substrate that is the object of processing also has variations, for example, there is a variation in the film thickness and device shape of the film formed on the object to be processed before CMP.
  • Such variation occurs in the form of crossing between chips or between chips within the substrate surface, and also occurs between substrates or lots.
  • the polishing conditions for the substrate being polished and the substrate before polishing are controlled so that these variations are within a certain threshold. And / or reworking (re-polishing) the substrate that has exceeded the threshold.
  • the effect of suppressing variation due to the polishing conditions as described above appears mainly in the radial direction of the substrate, it is difficult to adjust the variation in the circumferential direction of the substrate.
  • the local polishing amount distribution may vary within the substrate surface depending on the processing conditions during CMP and the state of the lower layer of the film polished by CMP.
  • the device region in the substrate surface has been expanded from the viewpoint of recent yield improvement, and it is necessary to adjust the polishing distribution to the edge portion of the substrate. ing.
  • polishing conditions and cleaning conditions and rework are basically performed by a polishing unit that performs CMP.
  • the polishing pad is almost entirely in contact with the substrate surface, and even when a part is in contact, from the viewpoint of maintaining the processing speed, the contact area between the polishing pad and the substrate is It must be taken big.
  • FIG. 15 is a diagram showing a schematic configuration of an example of a partial polishing apparatus 1000 for performing polishing using a polishing pad having a diameter smaller than that of the object to be processed.
  • a polishing pad 502 having a diameter smaller than that of the substrate Wf that is a processing target is used.
  • the partial polishing apparatus 1000 includes a stage 400 on which a substrate Wf is installed, a polishing head 500 to which a polishing pad 502 for performing processing on a processing surface of the substrate Wf is attached, and a polishing head 500.
  • a holding arm 600, a processing liquid supply system 700 for supplying a processing liquid, and a conditioning unit 800 for conditioning the polishing pad 502 are provided.
  • the overall operation of the partial polishing apparatus 1000 is controlled by the control device 900.
  • the partial polishing apparatus shown in FIG. 15 supplies DIW (pure water), cleaning chemical liquid, and polishing liquid such as slurry from the processing liquid supply system 700 to the substrate and presses the substrate while rotating the polishing pad 502. By doing so, the substrate can be partially polished.
  • DIW pure water
  • cleaning chemical liquid cleaning chemical liquid
  • polishing liquid such as slurry
  • the polishing pad 502 has a size smaller than that of the substrate Wf.
  • the diameter ⁇ of the polishing pad 502 is equal to or smaller than the variation area of the film thickness and shape to be processed.
  • the diameter ⁇ of the polishing pad 502 is 50 mm or less, or ⁇ 10-30 mm.
  • the accuracy of polishing for a desired processing region conversely, the accuracy improves as the diameter of the polishing pad decreases. This is because the unit processing area decreases as the diameter of the polishing pad decreases.
  • the polishing pad 502 when the substrate Wf is partially polished, the polishing pad 502 is pressed against the substrate Wf while rotating the polishing pad 502 about the rotation shaft 502A. At this time, the arm 600 may be swung in the radial direction of the substrate Wf. Further, the stage 400 may be rotated about the rotation axis 400A.
  • the conditioning unit 800 includes a dress stage 810 that holds a dresser 820. The dress stage 810 can rotate around the rotation shaft 810A. In the partial polishing apparatus 1000 of FIG. 15, the polishing pad 502 can be conditioned by pressing the polishing pad 502 against the dresser 820 and rotating the polishing pad 502 and the dresser 820.
  • the control apparatus 900 controls the rotation speed of the stage 400, the rotation speed of the polishing pad 502, the pressing force of the polishing pad 502, the swing speed of the arm 600, and the processing liquid supply system 700.
  • An arbitrary region on the substrate Wf can be partially polished by controlling the supply of the processing liquid, the processing time, and the like.
  • conditioning is performed as described above. Conditioning may be performed after the polishing of one substrate is completed and before the next substrate is polished.
  • One object of the present application is to provide a polishing apparatus capable of maintaining the state of the polishing member well during polishing.
  • a polishing apparatus for locally polishing a substrate conditions a polishing member having a processing surface smaller than the substrate in contact with the substrate, and the polishing member. And a first pressing mechanism for pressing the conditioning member against the polishing member during polishing of the substrate, and a control device for controlling the operation of the polishing apparatus. Is configured to control the first pressing mechanism when the substrate is locally polished by the polishing member. According to the polishing member of aspect 1, the polishing member can be conditioned at the same time when the substrate is being polished by the polishing member. Therefore, the state of the polishing member can be maintained well during polishing.
  • Mode 2 in the polishing apparatus according to mode 1, a pressing mechanism for pressing the polishing member against the substrate, and the polishing member is moved in a first movement direction parallel to the surface of the substrate.
  • a first drive mechanism in the polishing apparatus according to mode 1, a pressing mechanism for pressing the polishing member against the substrate, and the polishing member is moved in a first movement direction parallel to the surface of the substrate.
  • Mode 3 in the polishing apparatus of mode 2, the conditioning member is moved so as to have a component in a second movement direction that is perpendicular to the first movement direction and parallel to the surface of the substrate.
  • the second drive mechanism is configured to give a linear motion and / or a rotational motion to the conditioning member.
  • the controller presses the first press so as to execute conditioning at a predetermined cycle during polishing of the substrate. It is configured to control the mechanism.
  • the polishing apparatus according to any one of Embodiments 1 to 6 includes the recovery device for recovering the waste generated from the polishing member during conditioning.
  • the recovery device in the polishing apparatus of Embodiment 7, has a suction section for sucking and removing debris generated from the polishing member generated during conditioning.
  • the recovery device has a scraper or a wiper for collecting debris generated from the polishing member generated during conditioning.
  • the recovery device in the polishing apparatus according to any one of Embodiments 7 to 9, includes a liquid supply mechanism for cleaning the polishing member after conditioning, and the polishing member. A liquid recovery mechanism for recovering the liquid after washing.
  • the polishing member is (1) disc-shaped or cylindrical, and the disc-shaped or cylindrical
  • the central axis of the shape is parallel to the surface of the substrate
  • (2) is a disc shape, and the central axis of the disc shape is inclined from a direction perpendicular to the surface of the substrate, and (3) a conical shape or a cut A conical shape, the central axis 4 of the conical shape or the truncated conical shape being parallel to the surface of the substrate
  • It is a spherical shape or a shape having a part of a spherical shape, and (5) has a belt member.
  • Mode 12 there is provided a method for polishing a substrate, the step of pressing a polishing member having a processed surface that contacts the substrate smaller than the substrate against the substrate, and using the polishing member as a substrate.
  • the step of polishing the substrate by relatively moving the polishing member and the substrate while pressing, and while the substrate is being polished, the conditioning member is brought into contact with the polishing member to move the polishing member Conditioning.
  • the polishing member can be conditioned at the same time when the substrate is being polished with the polishing member. Therefore, the state of the polishing member can be maintained well during polishing.
  • the polishing method of embodiment 12 includes the step of applying a linear motion and / or a rotational motion to the conditioning member.
  • FIG. 6 is a schematic diagram illustrating a mechanism for holding a polishing 502 of a polishing head, according to one embodiment. It is a perspective view showing roughly an example of the 2nd conditioner which can be used for a partial polisher by one embodiment. It is a perspective view showing roughly an example of the 2nd conditioner which can be used for a partial polisher by one embodiment. It is a side view showing roughly an example of a polish head and the 2nd conditioner which can be used for a partial polish device by one embodiment. It is a side view showing roughly an example of a polish head and the 2nd conditioner which can be used for a partial polish device by one embodiment.
  • FIG. 3 is a side view schematically illustrating a collection device according to one embodiment.
  • FIG. 3 is a side view schematically illustrating a collection device according to one embodiment.
  • FIG. 3 is a side view schematically illustrating a collection device according to one embodiment.
  • FIG. 3 is a side view schematically illustrating a collection device according to one embodiment.
  • 3 illustrates an example of a control circuit for processing information related to a film thickness, unevenness, and height of a substrate according to an embodiment.
  • FIG. 1 is a schematic diagram illustrating a substrate processing system equipped with a partial polishing apparatus according to an embodiment. It is a figure which shows schematic structure of an example of the partial polishing apparatus for grind
  • FIG. 1 is a schematic diagram showing a configuration of a partial polishing apparatus 1000 according to an embodiment.
  • the partial polishing apparatus 1000 is configured on the base surface 1002.
  • the partial polishing apparatus 1000 may be configured as an independent apparatus, and a module of a part of the substrate processing system 1100 including the large diameter polishing apparatus 1200 that uses a large diameter polishing pad together with the partial polishing apparatus 1000. (See FIG. 14).
  • the partial polishing apparatus 1000 is installed in a housing (not shown).
  • the casing includes an exhaust mechanism (not shown) and is configured so that a polishing liquid or the like is not exposed to the outside of the casing during the polishing process.
  • the partial polishing apparatus 1000 includes a stage 400 that holds the substrate Wf upward.
  • the substrate Wf can be placed on the stage 400 by a transfer device (not shown).
  • the illustrated partial polishing apparatus 1000 includes four lift pins 402 that can move up and down around the stage 400. When the lift pins 402 are raised, the substrate Wf is transferred from the transfer device onto the four lift pins 402. Can receive. After the substrate Wf is placed on the lift pins 402, the lift pins 402 are lowered to the substrate delivery position to the stage 400, whereby the substrate Wf is temporarily placed on the stage. Therefore, it is possible to position the substrate Wf within a region limited to the inside of the four lift pins 402.
  • the substrate Wf may be positioned at a predetermined position on the stage 400 by the positioning mechanism 404 separately.
  • the substrate Wf can be positioned by positioning pins (not shown) and positioning pads 406.
  • the positioning mechanism 404 includes a positioning pad 406 that can move in a direction within the plane of the substrate Wf, and includes a plurality of positioning pins (not shown) on the opposite side of the positioning pad 406 across the stage 400. In a state where the substrate Wf is placed on the lift pins 402, the positioning pad 406 can be pressed against the substrate Wf, and the substrate Wf can be positioned by the positioning pad 406 and the positioning pins.
  • the partial polishing apparatus 1000 includes a detection unit 408.
  • the detection unit 408 is for detecting the position of the substrate Wf disposed on the stage 400. For example, it is possible to detect the position of the substrate Wf on the stage 400 by detecting notches, orientation flats and the outer periphery of the substrate formed in the substrate Wf. By using the position of the notch or the orientation flat as a reference, it is possible to specify an arbitrary point on the substrate Wf, thereby enabling partial polishing of a desired region.
  • the control device 900 moves the polishing pad 502 based on this information.
  • the position may be corrected.
  • the lift pin 402 is moved to the substrate receiving position from the stage 400, and then the vacuum suction of the stage 400 is released.
  • the transfer device (not shown) can receive the substrate Wf on the lift pins 402. The substrate Wf can then be transported to any location for subsequent processing by the transport device.
  • the stage 400 of the partial polishing apparatus 1000 includes a rotation drive mechanism 410 and is configured to be rotatable and / or rotatable about the rotation shaft 400A.
  • rotation means continuous rotation in a certain direction
  • angle rotation means movement in the circumferential direction within a predetermined angle range (including reciprocation). ) Means to do.
  • the stage 400 may include a moving mechanism that applies a linear motion to the held substrate Wf.
  • linear motion means movement in a predetermined linear direction, and includes linear reciprocation.
  • FIG. 1 includes a polishing head 500.
  • the polishing head 500 holds the polishing pad 502.
  • FIG. 2 is a schematic view showing a mechanism for holding the polishing pad 502 of the polishing head 500.
  • the polishing head 500 includes a first holding member 504 and a second holding member 506.
  • the polishing pad 502 is held between the first holding member 504 and the second holding member 506.
  • the first holding member 504, the polishing pad 502, and the second holding member 506 are all disk-shaped.
  • the diameters of the first holding member 504 and the second holding member 506 are smaller than the diameter of the polishing pad 502.
  • the polishing pad 502 is exposed from the edges of the first holding member 504 and the second holding member 506 in a state where the polishing pad 502 is held by the first holding member 504 and the second holding member 506.
  • the first holding member 504, the polishing pad 502, and the second holding member 506 all have an opening at the center, and the rotating shaft 510 is inserted into the opening.
  • One or more guide pins 508 projecting toward the polishing pad 502 are provided on the surface of the first holding member 504 on the polishing pad 502 side.
  • a through hole is provided at a position corresponding to the guide pin 508 in the polishing pad 502, and a recess for receiving the guide pin 508 is formed on the surface of the second holding member 506 on the polishing pad 502 side. Therefore, when the first holding member 504 and the second holding member 506 are rotated by the rotating shaft 510, the polishing pad 502 can rotate integrally with the holding members 504 and 506 without slipping.
  • the polishing pad 502 is made of a material such as a commercially available CMP pad.
  • a partial polishing apparatus 1000 shown in FIG. 1 includes a holding arm 600 that holds a polishing head 500.
  • the holding arm 600 includes a first drive mechanism for giving the polishing pad 502 movement in the first movement direction with respect to the substrate Wf.
  • the “first movement direction” here is the movement of the polishing pad 502 for polishing the substrate Wf, and is the rotational movement of the polishing pad 502 in the partial polishing apparatus 1000 of FIG.
  • the first drive mechanism can be composed of, for example, a general motor.
  • the polishing pad 502 moves in parallel to the surface of the substrate Wf (the tangential direction of the polishing pad 502; the y direction in FIG. 1). Even so, the “first motion direction” can be considered to be a constant linear direction.
  • the polishing pad 502 has a disk shape, and the rotation axis is perpendicular to the surface of the substrate Wf. Therefore, as described above, a linear velocity distribution is generated in the radial direction of the polishing pad 502, and a polishing velocity distribution is generated in the radial direction of the polishing pad 502. Therefore, in the partial polishing apparatus 1000 shown in FIG. 15, the variation of the unit processing trace shape corresponding to the contact area of the polishing pad 502 with the substrate Wf increases with respect to the predetermined shape. However, in the partial polishing apparatus 1000 shown in FIG.
  • the rotation axis of the polishing pad 502 is parallel to the surface of the substrate Wf, and the linear velocity is constant in the contact area of the polishing pad 502 with the substrate Wf. Therefore, in the partial polishing apparatus 1000 according to the embodiment of FIG. 1, the variation in the polishing speed resulting from the linear velocity distribution in the contact area of the polishing pad 502 with the substrate Wf is more than that of the partial polishing apparatus 1000 shown in FIG. Is also small. Therefore, in the partial polishing apparatus 1000 of FIG. 1, the variation of the unit processing trace shape with respect to the predetermined shape is reduced. Further, in the partial polishing apparatus 1000 shown in FIG.
  • the polishing pad 502 is different from the case of the partial polishing apparatus 1000 shown in FIG.
  • the contact area with the substrate Wf can be easily miniaturized. Since the contact area between the polishing pad 502 and the substrate Wf can be miniaturized, for example, by increasing the diameter of the polishing pad 502, the relative linear velocity between the polishing pad 502 and the substrate Wf can be increased. Therefore, it is possible to increase the polishing rate.
  • the contact area between the polishing pad 502 and the substrate Wf is determined by the diameter and thickness of the polishing pad 502.
  • the polishing pad 502 may have a diameter ⁇ of about 50 mm to about 300 mm, and the polishing pad 502 may have a thickness of about 1 mm to about 10 mm.
  • the first drive mechanism can change the rotational speed of the polishing pad 502 during polishing. By changing the rotation speed, the polishing speed can be adjusted. Therefore, even when the required polishing amount in the region to be processed on the substrate Wf is large, the polishing can be efficiently performed. Further, for example, even when the polishing pad 502 is greatly worn during polishing and the diameter of the polishing pad 502 changes, the polishing speed can be maintained by adjusting the rotation speed.
  • the first drive mechanism gives a rotational motion to the disc-shaped polishing pad 502, but in other embodiments, the shape of the polishing pad 502 is other than that. The shape can also be utilized, and the first drive mechanism can be configured to provide linear motion to the polishing pad 502.
  • the linear motion includes linear reciprocating motion.
  • the partial polishing apparatus 1000 shown in FIG. 1 includes a vertical drive mechanism 602 for moving the holding arm 600 in a direction perpendicular to the surface of the substrate Wf (z direction in FIG. 1).
  • the vertical drive mechanism 602 enables the polishing head 500 and the polishing pad 502 to move together with the holding arm 600 in a direction perpendicular to the surface of the substrate Wf.
  • the vertical drive mechanism 602 also functions as a pressing mechanism for pressing the polishing pad 502 against the substrate Wf when the substrate Wf is partially polished.
  • the vertical drive mechanism 602 is a mechanism using a motor and a ball screw.
  • a pneumatic or hydraulic drive mechanism or a drive mechanism using a spring may be used.
  • Examples include constant pressure control using a combination of air cylinder and precision regulator, constant pressure control using a combination of air cylinder and elastic body (spring, etc.), open loop control using a combination of air cylinder and electropneumatic regulator, and air cylinder and electropneumatic regulator. Closed loop control using pressure value from external pressure sensor for combination, closed loop control using load value from load cell for combination of air cylinder and electro-pneumatic regulator, load value from load cell for combination of servo motor and ball screw The closed loop control used, etc. are mentioned. In one embodiment, different drive mechanisms may be used for the coarse movement and the fine movement as the vertical drive mechanism 602 for the polishing head 500.
  • the driving mechanism for coarse movement may be a driving mechanism using a motor
  • the driving mechanism for fine movement for pressing the polishing pad 502 against the substrate Wf may be a driving mechanism using an air cylinder.
  • the pressing force of the polishing pad 502 against the substrate Wf can be controlled by adjusting the air pressure in the air cylinder while monitoring the pressing force of the polishing pad 502.
  • an air cylinder may be used as a drive mechanism for coarse movement
  • a motor may be used as a drive mechanism for fine movement.
  • the pressing force of the polishing pad 502 against the substrate Wf can be controlled by controlling the motor while monitoring the torque of the motor for fine movement.
  • a piezo element may be used as another driving mechanism, and the movement amount can be adjusted by a voltage applied to the piezo element.
  • the fine movement drive mechanism is provided at a position where the polishing pad 502 of the holding arm 600 is held, that is, at the tip of the arm 600 in the example of FIG. You may do it.
  • the partial polishing apparatus 1000 shown in FIG. 1 includes a lateral drive mechanism 620 for moving the holding arm 600 in the lateral direction (x direction in FIG. 1).
  • the lateral driving mechanism 620 can move the polishing head 500 and the polishing pad 502 in the lateral direction together with the arm 600.
  • the lateral direction (x direction) is a second movement direction that is perpendicular to the first movement direction described above and parallel to the surface of the substrate. Therefore, the partial polishing apparatus 1000 moves the polishing pad 502 in the first movement direction (y direction) to polish the substrate Wf and simultaneously moves the polishing pad 502 in the second movement direction (x direction) orthogonal to each other.
  • the linear velocity is constant in the contact region of the polishing pad 502 with the substrate Wf.
  • the processing trace shape of the substrate Wf particularly the substrate Wf of the polishing pad 502
  • the polishing speed varies in a direction perpendicular to the first movement direction on the contact surface.
  • the vertical drive mechanism 602 is a mechanism using a motor and a ball screw.
  • the lateral drive mechanism 620 is configured to move the holding arm 600 together with the vertical drive mechanism 602.
  • the effect of making the machining trace shape uniform can be exhibited. it can.
  • the partial polishing apparatus 1000 according to the embodiment shown in FIG. 1 includes a polishing liquid supply nozzle 702.
  • the polishing liquid supply nozzle 702 is fluidly connected to a supply source 710 (see FIG. 15) of polishing liquid, for example, slurry.
  • the polishing liquid supply nozzle 702 is held by the holding arm 600. Therefore, the polishing liquid can be efficiently supplied only to the polishing region on the substrate Wf through the polishing liquid supply nozzle 702.
  • the partial polishing apparatus 1000 includes a cleaning mechanism 200 for cleaning the substrate Wf.
  • the cleaning mechanism 200 includes a cleaning head 202, a cleaning member 204, a cleaning head holding arm 206, and a rinse nozzle 208.
  • the cleaning member 204 is a member for cleaning the substrate Wf after partial polishing by contacting the substrate Wf while rotating.
  • the cleaning member 204 can be formed from a PVA sponge in one embodiment.
  • the cleaning member 204 may include a cleaning nozzle for realizing megasonic cleaning, high-pressure water cleaning, and two-fluid cleaning instead of or in addition to the PVA sponge.
  • the cleaning member 204 is held by the cleaning head 202.
  • the cleaning head 202 is held by the cleaning head holding arm 206.
  • the cleaning head holding arm 206 includes a drive mechanism for rotating the cleaning head 202 and the cleaning member 204.
  • a drive mechanism can be composed of, for example, a motor.
  • the cleaning head holding arm 206 includes a swing mechanism for swinging in the plane of the substrate Wf.
  • the cleaning mechanism 200 includes a rinse nozzle 208.
  • the rinse nozzle 208 is connected to a cleaning liquid supply source (not shown).
  • the cleaning liquid can be, for example, pure water or chemical liquid.
  • the rinse nozzle 208 may be attached to the cleaning head holding arm 206.
  • the rinse nozzle 208 includes a swing mechanism for swinging in the plane of Wf.
  • the partial polishing apparatus 1000 includes a conditioning unit 800 for conditioning the polishing pad 502.
  • the conditioning unit 800 is disposed outside the stage 400.
  • the conditioning unit 800 includes a dress stage 810 that holds a dresser 820.
  • the dress stage 810 is rotatable about a rotation axis 810A.
  • the polishing pad 502 is conditioned by pressing the polishing surface of the polishing pad 502 (the surface in contact with the substrate Wf) against the dresser 820 and rotating the polishing pad 502 and the dresser 820.
  • the dress stage 810 may be configured to perform a linear motion (including a reciprocating motion) instead of a rotational motion.
  • the conditioning unit 800 mainly finishes the partial polishing at a certain point of the substrate Wf and conditions the polishing pad 502 before performing the next point or the partial polishing of the next substrate. Use for. Further, during the partial polishing of the substrate Wf, the polishing pad 502 may be temporarily retracted to the conditioning unit 800 to perform the conditioning.
  • the dresser 820 includes, for example, (1) a diamond dresser in which diamond particles are electrodeposited and fixed on the surface, and (2) a diamond dresser in which diamond abrasive grains are disposed on the entire contact surface with the polishing pad, And (3) a brush dresser in which resin brush bristles are arranged on the entire surface or a part of the contact surface with the polishing pad, (4) any one of these, or any combination thereof can be formed. .
  • the partial polishing apparatus 1000 according to the embodiment shown in FIG.
  • the second conditioner 850 is for conditioning the polishing surface of the polishing pad 502 (the surface in contact with the substrate Wf) while the substrate Wf is being polished by the polishing pad 502. Therefore, the second conditioner 850 can also be called an in-situ conditioner.
  • the second conditioner 850 is held by the holding arm 600 in the vicinity of the polishing pad 502.
  • the second conditioner 850 includes a moving mechanism 854 (see FIG. 3-9) for moving the conditioning member 852 in a direction in which the conditioning member 852 is pressed against the polishing pad 502.
  • the conditioning member 852 includes, for example, (1) a diamond dresser in which diamond particles are electrodeposited and fixed on the surface, and (2) a diamond dresser in which diamond abrasive grains are arranged on the entire contact surface with the polishing pad. And (3) a brush dresser in which resin brush bristles are disposed on the entire surface or a part of the contact surface with the polishing pad, and (4) any one of these or any combination thereof may be formed. it can.
  • the conditioning member 852 is held in the vicinity of the polishing pad 502 and separated from the polishing pad 502 in the y direction, and the conditioning member 852 can be moved in the y direction by the moving mechanism 854. ing.
  • the moving mechanism 854 has a function as a pressing mechanism that presses the conditioning member 852 against the polishing pad 502.
  • the moving mechanism 854 may be a mechanism using a motor and a ball screw, a pneumatic or hydraulic driving mechanism, a driving mechanism using a spring, or a combination thereof.
  • Examples include constant pressure control by combining air cylinders and precision regulators, constant pressure control by combining air cylinders and elastic bodies (springs, etc.), open loop control by combining air cylinders and electropneumatic regulators, air cylinders and electropneumatic regulators Closed loop control using pressure value from external pressure sensor for combination, closed loop control using load value from load cell for combination of air cylinder and electro-pneumatic regulator, load value from load cell for combination of servo motor and ball screw Closed-loop control using the.
  • the conditioning member 852 may be configured to be capable of rotational movement and / or linear movement by a driving mechanism (not shown).
  • the polishing pad 502 can be conditioned during the polishing of the substrate Wf by pressing the conditioning member 852 against the polishing pad 502 while rotating it. Details of the second conditioner 850 will be described later.
  • the partial polishing apparatus 1000 includes a control device 900.
  • Various drive mechanisms of the partial polishing apparatus 1000 are connected to the control device 900, and the control device 900 can control the operation of the partial polishing apparatus 1000.
  • the control device includes an arithmetic unit that calculates a target polishing amount in the region to be polished of the substrate Wf.
  • the control device 900 is configured to control the polishing device according to the target polishing amount calculated by the calculation unit.
  • the control device 900 can be configured by installing a predetermined program in a general computer including a storage device, a CPU, an input / output mechanism, and the like.
  • the partial polishing apparatus 1000 may include a state detection unit 420 (FIG. 13A, FIG. 13B, etc.) for detecting the state of the surface to be polished of the substrate Wf, although not shown in FIG. Good.
  • the state detection unit may be a Wet-ITM (In-line Thickness Monitor) 420 as an example.
  • Wet-ITM In-line Thickness Monitor
  • the detection head exists in a non-contact state on the substrate Wf, and the film thickness distribution (or information related to the film thickness) of the film formed on the substrate Wf by moving the entire surface of the substrate Wf. Can be detected (measured).
  • a detector other than the Wet-ITM can be used as the state detection unit 420.
  • a known non-contact detection method such as an eddy current method or an optical method can be employed, or a contact detection method may be employed.
  • a contact-type detection method for example, a detection head including a probe that can be energized is prepared, and the surface of the substrate Wf is scanned in a state where the probe is brought into contact with the substrate Wf and energized, whereby the distribution of film resistance can be determined. It is possible to employ electric resistance type detection.
  • step detection is performed by scanning the surface of the substrate Wf while the probe is in contact with the surface of the substrate Wf, and detecting the unevenness distribution of the surface by monitoring the vertical movement of the probe. A method can also be adopted.
  • the detected output is a film thickness or a signal corresponding to the film thickness.
  • the film thickness difference may be recognized based on the color tone difference on the surface of the substrate Wf.
  • the notch or orientation flat position detected by the detection unit 408 as a reference, it is possible to associate data such as film thickness with not only the radial position but also the circumferential position. As a result, it is possible to obtain the film thickness and level difference on the substrate Wf or the distribution of signals related to them. Further, when performing partial polishing, it is possible to control the operations of the stage 400 and the holding arm 600 based on the position data.
  • the state detection unit 420 described above is connected to the control device 900, and the signal detected by the state detection unit 420 is processed by the control device 900.
  • the control device 900 for the detector of the state detection unit 420 may use the same hardware as the control device 900 that controls the operation of the stage 400, the polishing head 500, and the holding arm 600. May be used.
  • the polishing process of the substrate Wf and the surface state of the substrate Wf Hardware resources used for detection and subsequent signal processing can be distributed, and the overall processing speed can be increased.
  • the detection timing by the state detection unit 420 can be before, during and / or after polishing the substrate Wf.
  • the state detection unit 420 is mounted independently, it does not interfere with the operation of the holding arm 600 as long as it is a polishing processing interval even before polishing, after polishing, or during polishing.
  • the film thickness in the processing of the substrate Wf or a signal related to the film thickness is not delayed as much as possible.
  • the state detection unit 420 is scanned.
  • the state detection unit 420 is mounted in the partial polishing apparatus 1000 for detecting the state of the surface of the substrate Wf.
  • this detection unit may be arranged outside the partial polishing apparatus 1000 as a detection unit.
  • Wet-ITM is effective for measurement during processing, but other than that, it is installed in the partial polishing apparatus 1000 for obtaining a film thickness before or after processing or a signal corresponding to the film thickness. It does not necessarily have to be.
  • An ITM may be mounted outside the partial polishing module, and measurement may be performed when the substrate Wf is taken in and out of the partial polishing apparatus 1000. Further, the polishing end point of each region to be polished of the substrate Wf may be determined based on the film thickness acquired by the state detection unit 420 or a signal related to the film thickness or unevenness / height.
  • FIG. 3 is a perspective view schematically showing an example of the second conditioner 850 that can be used in the partial polishing apparatus 1000 shown in FIG.
  • FIG. 3 shows the vicinity of the polishing head 500 at the tip of the holding arm 600.
  • the polishing head 500 holds a rotatable disc-shaped polishing pad 502.
  • the polishing pad 502 is movable in the y direction that is the first movement direction with respect to the substrate Wf by rotation.
  • the second conditioner 850 is attached to the holding arm 600.
  • the second conditioner 850 includes a conditioning member 852 for conditioning the polishing pad 502.
  • the conditioning member 852 is held by the moving mechanism 854 in the vicinity of the polishing pad 502 and separated from the polishing pad 502 in the y direction.
  • the conditioning mechanism 854 is configured to be able to move the conditioning member 852 in the y direction.
  • the moving mechanism 854 has a function as a pressing mechanism that presses the conditioning member 852 against the polishing pad 502. Therefore, the second conditioner 850 can condition the polishing pad 502 during polishing by pressing the conditioning member 852 against the polishing pad 502 during polishing.
  • the moving mechanism 854 can be constituted by a motor or the like, or a hydraulic or pneumatic moving mechanism may be employed.
  • FIG. 4 is a perspective view schematically showing an example of a second conditioner 850 that can be used in the partial polishing apparatus 1000 shown in FIG. FIG. 4 shows the vicinity of the polishing head 500 at the tip of the holding arm 600.
  • the second conditioner 850 shown in FIG. 4 has a swing mechanism 856 added to the second conditioner 850 shown in FIG.
  • the swing mechanism 856 is perpendicular to the first motion direction that is the motion direction of the polishing pad 502 and has a component in the second motion direction parallel to the surface of the substrate Wf.
  • Conditioning member 852 can be moved.
  • FIG. 4 is a perspective view schematically showing an example of a second conditioner 850 that can be used in the partial polishing apparatus 1000 shown in FIG. FIG. 4 shows the vicinity of the polishing head 500 at the tip of the holding arm 600.
  • the second conditioner 850 shown in FIG. 4 has a swing mechanism 856 added to the second conditioner 850 shown in FIG.
  • the swing mechanism 856 is perpendicular to the first motion direction that is the motion
  • the swing mechanism 856 moves the moving mechanism 854 and the conditioning member 852 in the x direction that is perpendicular to the first movement direction (y direction) of the polishing pad 502 and parallel to the substrate W. Can be moved. Therefore, the position where the conditioning member 852 contacts the polishing pad 502 can be changed during the conditioning of the polishing pad 502.
  • the swing mechanism 856 can be constituted by a motor or the like, or a hydraulic or pneumatic moving mechanism may be employed.
  • an example of a swing motion is described as a mechanism for providing the second motion direction component.
  • a rotational motion or a translational rotational motion (a motion combining a linear motion and a rotational motion) is used. It may be a motion mechanism having a second motion direction component, and this is the same in other embodiments described later.
  • the shape of the conditioning member 852 is a flat plate in this embodiment, but can be appropriately changed depending on the shape of the polishing pad 502 and the type of the second motion mechanism, and this is the same in other embodiments described later. .
  • the conditioning member 852 may have a disk shape.
  • the contact surface of the conditioning member 852 with the polishing pad 502 may have a curved surface shape that follows the surface. Efficient conditioning of the polishing pad 502 is possible. Further, the end portion of the conditioning member 852 may be chamfered to suppress load concentration during conditioning.
  • FIG. 5 is a side view schematically showing an example of a polishing head 500 and a second conditioner 850 that can be used in the partial polishing apparatus 1000 according to an embodiment.
  • the polishing pad 502 is disk-shaped.
  • a disc-shaped polishing pad 502 is held by a rotatable polishing head 500.
  • the rotating shaft 502A of the polishing head 500 is inclined from a direction perpendicular to the surface of the substrate Wf. In other words, the surface of the disc-shaped polishing pad 502 is non-parallel to the substrate Wf.
  • the second conditioner 850 of the partial polishing apparatus 1000 shown in Fig. 5 includes a conditioning member 852.
  • Conditioning member 852 is coupled to moving mechanism 854.
  • the moving mechanism 854 can move the conditioning member 852 in the direction of the polishing pad 502 and can also press the polishing pad 502.
  • the moving mechanism 854 is coupled to the swing mechanism 856.
  • the swing mechanism 856 can move the moving mechanism 854 and the conditioning member 852 in a direction having a component in a direction perpendicular to the rotation axis 502A of the polishing pad 502.
  • the moving mechanism 854 and the swinging mechanism 856 are held by the support member 858.
  • the support member 858 is fixed to the holding arm 600. As shown in FIG.
  • the edge portion in a certain direction of the polishing pad 502 can be pressed against the substrate Wf to polish the substrate Wf, and at the same time, the edge portion in the opposite direction of the polishing pad 502 is separated from the substrate Wf. ing. Therefore, the conditioning member 852 is pressed against the edge portion in the opposite direction, and the polishing pad 502 can be conditioned during the polishing of the substrate Wf.
  • the second conditioner 850 can include a rotation mechanism or a translational rotation motion mechanism that rotates the conditioning member 852 shown in FIG. 5 about the rotation shaft 852A. However, such a rotation mechanism may not be provided.
  • the moving mechanism 854 and the swing mechanism 856 can be configured by a motor or the like, or a hydraulic or pneumatic moving mechanism may be employed.
  • FIG. 6 is a side view schematically showing an example of a polishing head 500 and a second conditioner 850 that can be used in the partial polishing apparatus 1000 according to an embodiment.
  • the polishing pad 502 is frustoconical. Or you may employ
  • a frustoconical polishing pad 502 is held by a rotatable polishing head 500.
  • the rotation axis 502A of the polishing head 500 is parallel to the surface of the substrate Wf and coincides with the center of the truncated cone shape. In this state, only the edge portion of the polishing pad 502 is in contact with the substrate Wf, so that a minute region can be polished.
  • the second conditioner 850 of the partial polishing apparatus 1000 shown in Fig. 6 includes a conditioning member 852.
  • the conditioning member 852 is disposed so as to be in contact with the side surface of the frustoconical polishing pad 502.
  • Conditioning member 852 is coupled to moving mechanism 854.
  • the moving mechanism 854 can move the conditioning member 852 toward the side surface of the frustoconical polishing pad 502 and can press the conditioning member 852 against the side surface of the frustoconical polishing pad 502.
  • the moving mechanism 854 is coupled to the swing mechanism 856.
  • the swing mechanism 856 can move the moving mechanism 854 and the conditioning member 852 in a direction along the side surface of the frustoconical polishing pad 502. As shown in FIG.
  • the moving mechanism 854 and the swinging mechanism 856 are held by the support member 858.
  • the support member 858 is fixed to the holding arm 600.
  • the polishing pad 502 can be conditioned by the second conditioner 850 while the substrate Wf is being polished by the polishing pad 502.
  • the moving mechanism 854 and the swing mechanism 856 can be configured by a motor or the like, or a hydraulic or pneumatic moving mechanism may be employed.
  • FIG. 7 is a side view schematically showing an example of a polishing head 500 and a second conditioner 850 that can be used in the partial polishing apparatus 1000 according to an embodiment.
  • the polishing pad 502 has a shape having a spherical part. Or you may employ
  • the polishing pad 502 is held by a rotatable polishing head 500. As shown in FIG. 7, the rotation axis 502A of the polishing head 500 is parallel to the surface of the substrate Wf.
  • the seventh includes a conditioning member 852.
  • the conditioning member 852 has a disc shape, a square plate shape, or a curved shape along the spherical shape of the polishing pad 502, and is disposed so as to be in contact with the side surface of the polishing pad 502.
  • Conditioning member 852 is coupled to moving mechanism 854.
  • the moving mechanism 854 can move the conditioning member 852 toward the polishing pad 502 and can press the polishing pad 502.
  • the moving mechanism 854 is held by a support member 858.
  • the support member 858 includes a concave portion 860 that is curved. As shown in FIG.
  • the curved surface of the concave portion 860 can be a curved surface having the center of the spherical shape of the polishing pad 502.
  • the moving mechanism 854 is positioned on the curved surface of the concave portion 860 of the support member 858 and is disposed so as to be swingable along the curved surface.
  • the support member 858 is fixed to the holding arm 600.
  • the polishing pad 502 can be conditioned by the second conditioner 850 while the substrate Wf is being polished by the polishing pad 502.
  • the moving mechanism 854 and the swing mechanism 856 can be configured by a motor or the like, or a hydraulic or pneumatic moving mechanism may be employed.
  • FIG. 8 is a side view schematically illustrating an example of a polishing head 500 and a second conditioner 850 that can be used in the partial polishing apparatus 1000 according to an embodiment.
  • the abrasive member has an abrasive belt member 502B.
  • the polishing belt member 502B is supported by the support member 520, and can press the polishing belt member 502B against the substrate Wf.
  • the polishing belt member 502B is movable in the longitudinal direction by the rotation mechanism 522.
  • the polishing belt member 502B is made of a material such as a commercially available CMP pad.
  • the second conditioner 850 has a conditioning member 852.
  • the conditioning member 852 has a disc shape or a square plate shape, and is disposed so as to be in contact with the polishing surface of the polishing belt member 502B. Conditioning member 852 is coupled to moving mechanism 854. The moving mechanism 854 can move the conditioning member 852 toward the polishing belt member 502B. As shown in FIG. 8, the second conditioner 850 includes a belt back surface support member 862 at a position corresponding to the conditioning member 852 inside the polishing belt member 502B. In the embodiment shown in FIG. 8, while the polishing belt member 502B is supported by the belt back surface support member 862, the conditioning member 852 can be pressed against the polishing belt member 502B for conditioning.
  • FIG. 9 is a view as seen from the direction of the arrow 9 in FIG.
  • the second conditioner 850 includes a swing mechanism 856.
  • the swing mechanism 856 can move the moving mechanism 854 and the conditioning member 852 in the width direction of the polishing belt member 502B.
  • the moving mechanism 854 and the swing mechanism 856 can be configured by a motor or the like, or a hydraulic or pneumatic moving mechanism may be employed.
  • the partial polishing apparatus 1000 includes a recovery apparatus 300 for recovering debris generated from the polishing member generated during conditioning of the polishing pad 502.
  • FIG. 10 is a side view schematically illustrating the collection device 300 according to an embodiment. As shown in FIG. 10, the collection device 300 is attached to the holding arm 600.
  • a recovery apparatus 300 shown in FIG. 10 includes a suction unit 302.
  • the suction unit 302 is disposed so as to be close to the surface of the polishing pad 502 that contacts the substrate Wf.
  • the polishing pad 502 is a disc-shaped or cylindrical polishing pad 502, and the suction part 302 is disposed in the vicinity of the side surface of the disc-shaped or cylindrical polishing pad 502. .
  • a suction passage 304 is connected to the suction portion 302, and the suction passage 304 is connected to a vacuum source (not shown).
  • the suction unit 302 is disposed on the downstream side of the movement direction of the polishing pad 502 (the rotation direction in the embodiment of FIG. 10) from the position where the conditioning member 852 contacts the polishing pad 502.
  • the polishing pad 502 rotates clockwise, and the suction portion 302 is disposed on the downstream side from the position where the conditioning member 852 contacts the polishing pad 502.
  • the partial polishing apparatus 1000 can condition the polishing pad 502 with the second conditioner 850 while polishing the substrate Wf with the polishing pad 502. Due to the conditioning, debris is generated from the polishing pad 502.
  • the collection device 300 shown in FIG. 10 can suck and remove debris generated during conditioning. With this recovery device, it is possible to suppress the polishing pad debris generated during conditioning by the second conditioner 850 from reaching the surface of the substrate Wf, and the contamination of the surface of the substrate Wf by the polishing pad debris can be suppressed.
  • FIG. 11 is a side view schematically showing a collection device 300 according to an embodiment.
  • the collection device 300 is attached to the holding arm 600.
  • a recovery apparatus 300 shown in FIG. 11 includes a wiper 306 (or a scraper).
  • the wiper 306 is disposed so as to contact the surface of the polishing pad 502 that contacts the substrate Wf.
  • the polishing pad 502 is a disc-shaped or cylindrical polishing pad 502, and the wiper 306 is disposed so as to contact the side surface of the disc-shaped or cylindrical polishing pad 502. .
  • the wiper 306 is supported by a support member 308, and the support member 308 is connected to the holding arm 600. As shown in FIG.
  • the partial polishing apparatus 1000 can condition the polishing pad 502 with the second conditioner 850 while polishing the substrate Wf with the polishing pad 502. Due to the conditioning, debris is generated from the polishing pad 502.
  • the recovery device 300 shown in FIG. 11 can remove the waste generated during conditioning from the polishing pad 502 by the wiper 306. Although not shown, a recovery device 300 may be further provided for recovering waste generated from the polishing member shown in FIG.
  • FIG. 12 is a side view schematically showing the collection device 300 according to one embodiment.
  • the recovery apparatus 300 shown in FIG. 12 includes a liquid supply mechanism 310 for cleaning the polishing pad 502 after conditioning, and a liquid recovery mechanism 312 for recovering the liquid after cleaning the polishing pad 502.
  • the liquid supply mechanism 310 can be, for example, a nozzle that sprays pure water onto the polishing pad 502.
  • the liquid supply mechanism 310 can be a container that receives pure water sprayed on the polishing pad 502, and the liquid discharge unit 314 can be provided in the container.
  • the partial polishing apparatus 1000 can condition the polishing pad 502 with the second conditioner 850 while polishing the substrate Wf with the polishing pad 502. Due to the conditioning, debris is generated from the polishing pad 502.
  • the recovery apparatus 300 shown in FIG. 12 can remove debris generated during conditioning from the polishing pad 502 by spraying the liquid onto the polishing pad 502.
  • the recovery device 300 has been described with respect to the partial polishing apparatus 1000 including the disk-shaped or columnar polishing pad 502. However, the partial polishing including the polishing member 502 other than the disk-shaped or columnar shape is illustrated. A similar recovery device 300 can be provided in the device 1000. For example, the recovery device 300 can be applied to any polishing pad 502, polishing belt member 502B, or any other polishing member disclosed herein.
  • FIG. 13A shows an example of a control circuit for processing information related to the film thickness, unevenness, and height of the substrate Wf according to one embodiment.
  • the control unit for partial polishing determines a basic partial polishing processing recipe by combining parameters with a polishing processing recipe set by HMI (Human Machine Interface).
  • HMI Human Machine Interface
  • the partial polishing process recipe and parameters downloaded from the HOST to the partial polishing apparatus 1000 may be used.
  • the recipe server combines the basic partial polishing processing recipe and the polishing processing information of the process job, and generates a basic partial polishing processing recipe for each substrate Wf to be processed.
  • the partial polishing recipe server performs partial polishing processing recipes for each substrate Wf to be processed, substrate surface shape data stored in the database for partial polishing, and data such as substrate surface shape after past partial polishing related to similar substrates, and data in advance. Are combined with the polishing rate data for each parameter of the polishing conditions acquired in the above, and a partial polishing processing recipe for each substrate is generated.
  • the substrate surface shape data stored in the partial polishing database may use data of the corresponding substrate Wf measured in the partial polishing apparatus 1000, or may be downloaded in advance from the HOST to the partial polishing apparatus 1000. Data may be used.
  • the partial polishing recipe server transmits the partial polishing processing recipe to the partial polishing apparatus 1000 via the recipe server or directly.
  • the partial polishing apparatus 1000 partially polishes the substrate Wf according to the received partial polishing processing recipe.
  • FIG. 13B shows a circuit diagram when the state detection unit on the substrate surface is divided from the partial polishing control unit shown in FIG. 13A.
  • FIG. 14 is a schematic diagram showing a substrate processing system 1100 equipped with a partial polishing apparatus 1000 according to an embodiment.
  • the substrate processing system 1100 includes a partial polishing apparatus 1000, a large diameter polishing apparatus 1200, a cleaning apparatus 1300, a drying apparatus 1400, a control apparatus 900, and a transport mechanism 1500.
  • the partial polishing apparatus 1000 of the substrate processing system 1100 can be a partial polishing apparatus 1000 having any of the features described above.
  • the large-diameter polishing apparatus 1200 is a polishing apparatus that polishes a substrate using a polishing pad having a larger area than the substrate Wf to be polished.
  • a known CMP apparatus can be used as the large-diameter polishing apparatus 1200.
  • any known device can be adopted as the cleaning device 1300, the drying device 1400, and the transport mechanism 1500.
  • the control device 900 can control not only the partial polishing apparatus 1000 described above but also the overall operation of the substrate processing system 1100.
  • the partial polishing apparatus 1000 and the large diameter polishing apparatus 1200 are incorporated in one substrate processing system 1100. Therefore, various polishing processes can be performed by combining partial polishing by the partial polishing apparatus 1000, overall polishing of the substrate Wf by the large diameter polishing apparatus 1200, and detection of the surface state of the substrate Wf by the state detection unit.
  • the partial polishing by the partial polishing apparatus 1000 only a part of the surface of the substrate Wf can be polished, or the entire surface of the substrate Wf is being polished in the partial polishing apparatus 1000.
  • the polishing can be performed by changing the polishing conditions on a part of the surface of the substrate Wf.
  • the state of the surface of the substrate Wf that is an object to be polished is first detected.
  • the surface state is information (position, size, height, etc.) relating to the film thickness of the film formed on the substrate Wf and the surface roughness, and is detected by the state detection unit 420 described above.
  • a polishing recipe is created according to the detected surface state of the substrate Wf.
  • the polishing recipe is composed of a plurality of processing steps. As parameters in each step, for example, for the partial polishing apparatus 1000, the processing time, the dresser 820 arranged on the substrate Wf of the polishing pad 502 and the dress stage 810.
  • parameters for this determination include, for example, a target value corresponding to a desired film thickness and uneven state, and a polishing rate under the above polishing conditions.
  • the polishing rate may be stored in the control device 900 as a database and automatically calculated when the polishing conditions are set.
  • the polishing rate for each basic parameter may be acquired in advance and stored as a database.
  • the dwell time of the polishing head 500 in the substrate Wf plane can be calculated from these parameters and the acquired information on the film thickness and irregularities in the substrate Wf plane.
  • the transfer routes for these components may be set.
  • the film thickness in the surface of the substrate Wf and the conditions for obtaining the unevenness data may be set.
  • processing conditions such as the number of re-polishing repetitions
  • partial polishing and overall polishing are performed according to the prepared polishing recipe.
  • the cleaning of the substrate Wf can be performed at an arbitrary timing.
  • each of the partial polishing and the total polishing is performed to prevent this.
  • the substrate Wf may be cleaned after the processing.
  • the substrate Wf may be cleaned after performing both partial polishing and overall polishing.

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  • Computer Hardware Design (AREA)
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
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CN110461542A (zh) 2019-11-15
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