WO2018103763A1 - 一种低氧含量半导体芯复合材料光纤预制棒的制备方法 - Google Patents

一种低氧含量半导体芯复合材料光纤预制棒的制备方法 Download PDF

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WO2018103763A1
WO2018103763A1 PCT/CN2017/119615 CN2017119615W WO2018103763A1 WO 2018103763 A1 WO2018103763 A1 WO 2018103763A1 CN 2017119615 W CN2017119615 W CN 2017119615W WO 2018103763 A1 WO2018103763 A1 WO 2018103763A1
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semiconductor core
oxygen content
glass tube
core composite
low oxygen
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PCT/CN2017/119615
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French (fr)
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杨中民
钱奇
孙敏
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华南理工大学
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Priority to US16/468,287 priority Critical patent/US20190345054A1/en
Publication of WO2018103763A1 publication Critical patent/WO2018103763A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/0128—Manufacture of preforms for drawing fibres or filaments starting from pulverulent glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/01205—Manufacture of preforms for drawing fibres or filaments starting from tubes, rods, fibres or filaments
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/012—Manufacture of preforms for drawing fibres or filaments
    • C03B37/01205—Manufacture of preforms for drawing fibres or filaments starting from tubes, rods, fibres or filaments
    • C03B37/01225—Means for changing or stabilising the shape, e.g. diameter, of tubes or rods in general, e.g. collapsing
    • C03B37/01251—Reshaping the ends
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B37/00—Manufacture or treatment of flakes, fibres, or filaments from softened glass, minerals, or slags
    • C03B37/01—Manufacture of glass fibres or filaments
    • C03B37/02—Manufacture of glass fibres or filaments by drawing or extruding, e.g. direct drawing of molten glass from nozzles; Cooling fins therefor
    • C03B37/025—Manufacture of glass fibres or filaments by drawing or extruding, e.g. direct drawing of molten glass from nozzles; Cooling fins therefor from reheated softened tubes, rods, fibres or filaments, e.g. drawing fibres from preforms
    • C03B37/027—Fibres composed of different sorts of glass, e.g. glass optical fibres
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G02B6/02295—Microstructured optical fibre
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G02B6/036—Optical fibres with cladding with or without a coating core or cladding comprising multiple layers

Definitions

  • the invention belongs to the technical field of composite structure optical fiber materials, and particularly relates to a preparation method of an optical fiber preform with a low oxygen content semiconductor core composite material. .
  • Semiconductor core composite fiber is a new type of fiber that combines the excellent optical properties of glass fiber with the rich optical, electrical and thermal properties of semiconductor materials in nonlinear optics, sensing, photodetection, and infrared power transmission.
  • the fields of biomedicine and so on have great application prospects, and are the development direction of optical fiber that has been widely concerned by countries all over the world in recent years.
  • the semiconductor core composite fiber is prepared by first preparing an optical fiber preform, and then placing the optical fiber preform into an optical fiber drawing furnace to form an optical fiber.
  • the existing preparation methods include a tube powder method, a tube stick method, a tube melt method, and a film rolling method.
  • the semiconductor optical fiber preform is prepared by the prior art method, and the semiconductor in the optical fiber preform is easy to adsorb oxygen, resulting in oxidation of part of the semiconductor in the drawn fiber core. Even if there is inert atmosphere protection during the drawing process to control the oxidation of oxygen to the fiber-semiconductor core during the drawing process, since the semiconductor material in the fiber preform has adsorbed a large amount of oxygen, the resulting fiber core will still be oxygenated.
  • the present invention provides a method for efficiently preparing a low oxygen content semiconductor core composite optical fiber preform by vacuuming and sealing.
  • the vacuum-packed semiconductor core material was taken out and filled into a cladding glass tube that had been heat-sealed at one end.
  • the vacuum tube is used to evacuate the cladding tube.
  • the unsealed end of the hot-clad cladding tube is sealed in the cladding tube to form an optical fiber preform.
  • the preform is placed in a fiber drawing furnace for heating and drawing by means of glass fiber drawing.
  • the method can be used for preparing a low-oxygen semiconductor core composite optical fiber preform, and effectively solves the problem that the core material of the conventional semiconductor core glass cladding preform adsorbs oxygen, the sealing property of the filler is poor, the oxygen content of the drawn core is high, and the infrared transmission of the optical fiber is high. Problems such as poor performance, wide applicability, controllable size, and high efficiency in fiber preparation.
  • the method adopts a vacuuming and sealing tube synchronization method, that is, a composite optical fiber preform having a low oxygen content semiconductor core is efficiently prepared by means of a vacuum sealing tube in a glove box.
  • a method for preparing a low-oxygen semiconductor core composite material optical fiber preform the steps are as follows:
  • the semiconductor core raw material powder is closely filled with a central hole of the cladding glass tube sealed at one end;
  • the semiconductor core material comprises Al, Ga, In, Si, Ge, Sn One or more of Pb, P, As, Sb, Bi, S, Se, and Te.
  • the semiconductor core raw material powder is stored in a vacuum package before use.
  • the cladding glass tube is any oxide glass, including a borosilicate glass tube.
  • the one-side sealed cladding glass tube is obtained by the following processing: softening and heat-drawing one end of the cladding glass tube with butane flame heating, and then sequentially using 10 vol% of diluted hydrochloric acid and absolute ethanol for ultrasonication. Cleaning 10 minutes.
  • the ultrasound has a frequency of 80 Hz and a power of 300 watts.
  • the glass softening temperature of the cladding glass tube is higher than the melting temperature of the semiconductor core raw material powder.
  • the evacuation is evacuation to a pressure of 10 -6 to 100 Pa.
  • the prepared low-oxygen semiconductor core composite optical fiber preform is drawn to obtain a low-oxygen semiconductor core composite fiber.
  • the oxygen content of the obtained low-oxygen semiconductor core composite fiber is less than 5 wt%.
  • the present invention has the following advantages and benefits:
  • the invention solves the preparation method of the traditional composite optical fiber preform, wherein the core material adsorbs oxygen and the internal oxygen of the cladding is not removed, so that the core of the optical fiber has high oxygen content, the oxidation product destroys the microstructure, and the sealing property of the filler is poor.
  • optical fiber preform (2) a low-oxygen semiconductor core composite material prepared by the method of the present invention
  • the optical fiber preform has wide applicability, controllable size, high preparation efficiency and low cost
  • Optical fiber preforms can be used to pull high-transmission properties of composite materials with low oxygen content semiconductor cores under conditions without atmosphere protection.
  • Optical fiber which is expected to be used in micro-devices or wearable devices for multi-function optical fibers such as infrared light transmission, nonlinear optics, metamaterials, solar cells, and thermoelectric conversion.
  • Example 1 is an In-Se powder raw material and a general In-Se semiconductor core composite material in Example 1. X-ray diffraction comparison of fiber powder and low oxygen content In-Se semiconductor core composite fiber powder;
  • 2b is an elemental line scan of the polished end face of the low-oxygen content In-Se semiconductor core composite material in Example 1;
  • Figure 3 is a low oxygen content In-Se semiconductor core composite material in Example 1. Electron probe spectrometer scan of the fiber polished end face.
  • step (3) The assembled ordinary optical fiber preform and low oxygen content optical fiber preform are placed on the commercial drawing tower in turn; in the case of argon atmosphere protection, the middle of the ordinary optical fiber preform is heated for drawing, and the drawing temperature is 900 °C. In the absence of atmospheric protection, the low-oxygen fiber preform is directly heated for drawing, and the drawing temperature is 900 °C.
  • the ordinary In-Se semiconductor core composite fiber contains a large amount of InSe compound and a small amount of In elemental crystal
  • the low-oxygen content of In-Se semiconductor core composite fiber contains a large amount of In 4 Se 3 and a small amount of InSe compound crystal.
  • the chemical reaction between In and Se is more complete.
  • Figure 2a and Figure 2b show the common In-Se semiconductor core composite fiber and low-oxygen In-Se, respectively.
  • Semiconductor core composite material The element line scan of the fiber polished end face, as shown in Figure 2a and Figure 2b, the low oxygen content of the In-Se semiconductor core composite fiber has an oxygen content of less than 5 wt%. The element distribution is relatively normal. In-Se semiconductor core composite material is stable.
  • Figure 3 is an electron probe spectrometer scan of the low-oxygen In-Se semiconductor core composite fiber polished end face (O, Si, In, Se) , as shown in Figure 3, the low-oxygen content of In-Se semiconductor core composite fiber exists in In A small amount of segregation of the elements, but no core cracks, and good circularity, indicates that a continuous low-oxygen In-Se core composite fiber is obtained.
  • Preparation method and example 1 Preparation of low-oxygen content In-Se semiconductor core composite material
  • the fiber is the same, the difference is: the semiconductor core powder is tin powder (Sn, 4N, melting point 118.7 °C) and selenium powder (Se, 4N, melting point 221 °C);
  • the resulting low oxygen content Sn-Se semiconductor core composite fiber has a diameter of 200 microns.
  • the synthesis reaction of Sn and Se in the low-oxygen Sn-Se semiconductor core composite fiber is relatively complete.
  • the oxygen content of the low-oxygen Sn-Se semiconductor core composite fiber is less than 5 wt%, and the core is a mixture of SnSe and SnSe 2 . It has a good high temperature thermal effect and is expected to be applied to temperature sensing.
  • the fiber is the same, the difference is: the semiconductor core material powder is selected from the commercial P-type Bi-Te alloy rod, and is machined into a 10 cm-thick alloy rod with a diameter of 3 mm.
  • the melting point of the alloy rod is about 585 °C;
  • the borosilicate glass tube sealed to the lower end has a length of 15 cm, an inner diameter of 3 mm, and an outer diameter of 8 mm; the machined alloy thin rod is tightly packed into the center hole of the cladding glass tube.
  • Low oxygen content The Bi-Te semiconductor core composite fiber has a diameter of 200 microns.
  • the Bi-Te semiconductor core composite fiber-optic fiber has a relatively complete chemical reaction of Bi and Te, low oxygen content.
  • the Bi-Te semiconductor core composite fiber has an oxygen content of less than 5 wt% and a stable element distribution.
  • the core has good low-temperature thermoelectric properties and is expected to be applied to wearable low-temperature thermoelectric material power generation devices.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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  • Manufacture, Treatment Of Glass Fibers (AREA)

Abstract

一种低氧含量半导体芯复合材料光纤预制棒的制备方法：(1)在氮气气氛手套箱中，将半导体芯原料粉紧密填充满一端封口的包层玻璃管的中心孔；(2)对填充半导体芯原料粉的包层玻璃管进行抽真空，同时，热拉玻璃管的另一端封口，将半导体芯原料粉真空密封于包层玻璃管中，得到低氧含量半导体芯复合材料光纤预制棒。该方法解决了传统光纤预制棒的制备方法中填料密封性差、所拉制纤芯含氧量高以及制备的光纤传输性能差等问题，且制备的低氧含量半导体芯复合材料光纤预制棒适用性广，尺寸可控，并且制备效率高，成本低。

Description

一种低氧含量半导体芯复合材料光纤预制棒的制备方法
技术领域
本发明属于复合结构光纤材料技术领域，具体涉及一种 具有低氧含量 半导体芯复合 材料 光纤预制棒的制备 方法 。
背景技术
半导体芯复合材料光纤是一种新型光纤，可以将玻璃光纤优异的光学性能和半导体材料丰富的光、电、热等性能完美的结合起来，在非线性光学、传感、光电探测、红外功率传输、生物医疗等领域有着巨大的应用前景，是近年世界各国普遍关注的光纤发展方向。
此种半导体芯复合材料光纤的制备是先制备光纤预制棒，再将光纤预制棒放在光纤拉丝炉中拉制成光纤。目前已有的制备方法包括管粉法、管棒法、管抽熔体法和薄膜滚压法。但是，使用目前已有方法制备半导体光纤预制棒，光纤预制棒中半导体易吸附氧气，导致拉制的光纤纤芯中部分半导体被氧化。即使在拉丝过程中有惰性气氛保护来控制拉丝过程中氧气对光纤半导体纤芯的氧化，但是由于光纤预制棒中半导体材料已吸附了大量氧气，仍会导致最终拉制出的光纤纤芯含氧量高，即半导体芯被氧化，形成氧化产物破坏了纤芯的微观结构，导致光纤红外光传输损耗大、光电性能劣化等问题。针对传统管粉法和管棒法，本发明提供一种抽真空和封管同步的高效制备低氧含量半导体芯复合材料光纤预制棒的方法。在氮气手套箱中，取出真空包装的半导体芯料，将其填充入已经一端热拉封口的包层玻璃管。采用真空泵对包层管抽真空，与此同时，热拉包层管的未封口端，将芯料密封于包层管内，制成光纤预制棒。借助玻璃光纤拉丝的方法，将预制棒置于光纤拉丝炉中加热和拉丝。本方法可用于制备低氧含量半导体芯复合材料光纤预制棒，高效解决了传统半导体芯玻璃包层预制棒的芯料吸附氧、填料密封性差、所拉制纤芯含氧量高、光纤红外传输性能差等问题，其适用性广，尺寸可控，光纤制备效率高。
发明内容
本发明的目的在于提供一种低氧含量半导体芯复合 材料 光纤预制棒 的制备方法。该方法采用抽真空和封管同步法，即借助手套箱中真空封管的方法，高效制备具有低氧含量半导体芯的复合 材料 光纤 预制棒。
本发明的目的通过如下技术方案实现。
一种 低氧含量 半导体芯复合 材料 光纤 预制棒的制备方法 ，步骤如下：
（ 1 ）在氮气气氛手套箱中，将半导体芯原料粉紧密填充满一端封口的包层玻璃管的中心孔；
（ 2 ）对填充满半导体芯原料粉的包层玻璃管进行抽真空，同时，热拉玻璃管的另一端封口，将半导体芯原料粉真空密封于包层玻璃管中，得到所述低氧含量半导体芯复合材料光纤预制棒。
进一步地，步骤（ 1 ）中，所述半导体芯原料包括 Al 、 Ga 、 In 、 Si 、 Ge 、 Sn 、 Pb 、 P 、 As 、 Sb 、 Bi 、 S 、 Se 和 Te 中的一种以上。
更进一步地，步骤（ 1 ）中，所述半导体芯原料粉在使用前采用真空包装存放。
进一步地，步骤（ 1 ）中，所述包层玻璃管为任一种氧化物玻璃，包括硼硅酸盐玻璃管。
进一步地，步骤（ 1 ）中，所述一端封口的包层玻璃管通过如下加工处理得到：使用丁烷火焰加热软化并热拉包层玻璃管的一端封口，再依次用为 10 vol% 的稀盐酸和无水乙醇超声清洗 10 分钟。
更进一步地，所述超声的频率为 80 赫兹 ，功率为 300 瓦 。
进一步地，步骤（ 1 ）中，所述包层玻璃管的玻璃软化温度高于半导体芯原料粉的熔融温度。
进一步地，步骤（ 2 ）中，所述抽真空是抽真空至压力为 10-6 至 100 Pa 。
进一步地，将制备得到的低氧含量 半导体芯复合 材料 光纤预制棒拉丝，得到低氧量半导体芯复合 材料 光纤， 得到的 低氧含量半导体芯复合材料光纤中的氧含量低于 5 wt% 。
与现有技术相比，本发明具有如下优点和有益效果：
（ 1 ）本发明解决了传统复合材料光纤预制棒的制备方法中，未除去芯料吸附氧气和包层内部氧气，导致光纤内部的纤芯含氧量高，氧化产物破坏其微观结构，填料密封性差、所拉制纤芯含氧量高以及制备的光纤传输性能差等问题；
（ 2 ）本发明方法制备的 低氧含量 半导体芯复合 材料 光纤预制棒适用性广，尺寸可控，并且制备效率高，成本低；
（ 3 ）本发明方法制备的 低氧含量 半导体芯复合 材料 光纤预制棒可在无气氛保护的条件下拉丝，制备出高传输性能的具有低氧含量半导体芯的复合 材料 光纤，有望应用于红外光传输、非线性光学、超材料、太阳能电池和热电转换等多功能光纤的微型器件或可穿戴设备。
附图说明
图 1 为实施例 1 中 In-Se 粉末原料、 普通 In-Se 半导体芯复合 材料 光纤粉末和低氧含量的 In-Se 半导体芯复合 材料 光纤粉末的 X 射线衍射对比图；
图 2a 为实施例 1 中普通 In-Se 半导体芯复合 材料 光纤抛光端面的元素线扫描图；
图 2b 为实施例 1 中低氧含量的 In-Se 半导体芯复合 材料 光纤抛光端面的元素线扫描图；
图 3 为实施例 1 中 低氧含量的 In-Se 半导体芯复合 材料 光纤抛光端面的电子探针波谱仪面扫描图。
具体实施方式
为了更好的理解本发明 ， 下面结合实施例进一步阐明本发明的内容，但本发明的实施方式不限于此，对未特别说明的工艺参数，可参照常规技术进行。
实施例 1
具有 In-Se 半导体芯复合 材料 光纤预制棒和光纤的制备 ：
（ 1 ）包层玻璃管的加工与清洗：选用两个内径为 3 毫米，外径为 8 毫米，长为 20 厘米的硼硅酸盐玻璃管，下料头原长 3 厘米，分别使用丁烷火焰枪对准管壁加热两个玻璃管，软化硼硅酸盐玻璃管时热拉下端封口；分别使用 10 vol% 的稀盐酸和高纯无水乙醇，于超声清洗机中对下端封口后的硼硅酸盐玻璃管进行清洗 10 分钟，超声频率为 80 赫兹 ，功率为 300 瓦；
（ 2 ）普通光纤预制棒的组装：在大气环境中，将 In 粉（ 4N ，熔点 156.6 ℃ ）和 Se 粉（ 4N ，熔点 221 ℃ ）原料从真空包装中取出，按照 In:Se=4:3 的原子比将前驱体粉料混合均匀；竖置下端封口的包层玻璃管，开口朝上，将混合粉料紧密填充满经过步骤（ 1 ）清洗的包层玻璃管的中心孔，采用粘土和水玻璃密封包层玻璃管的上开口，并标记为普通光纤预制棒；
（ 3 ）低氧含量光纤预制棒的组装：在氮气气氛的手套箱中，将 In 粉（ 4N ）和 Se 粉（ 4N ）原料从真空包装中取出，按照 In:Se=4:3 的原子比将前驱体粉料混合均匀；竖置包层玻璃管，开口朝上，将混合粉料紧密填充满经过步骤（ 1 ）清洗的包层玻璃管的中心孔；采用机械真空泵（极限真空压力为 10-2 Pa ）的橡胶软管与包层玻璃管对接，在对包层玻璃管抽真空的同时，将丁烷火焰对准玻璃管上端，热拉包层玻璃管的上端，上料头原长 3 厘米 ，将芯料真空密封于包层玻璃管内部，制成光纤预制棒，并标记为低氧含量光纤预制棒；
（ 4 ）光纤拉丝：将步骤（ 3 ）组装好的普通光纤预制棒和低氧含量光纤预制棒依次放在商业拉丝塔上；在氩气气氛保护的情况下，加热普通光纤预制棒中部进行拉丝，拉丝温度为 900 ℃ ；在无气氛保护的情况下，直接加热低氧含量光纤预制棒进行拉丝，拉丝温度为 900 ℃ 。
最终，得到普通 In-Se 半导体芯复合 材料 光纤和低氧含量的 In-Se 半导体芯复合 材料 光纤，光纤直径为 250 微米，连续长度大于 1 米。
图 1 为 In-Se( 原子比 In:Se=4:3) 粉末原料、 普通 In-Se 半导体芯复合 材料 光纤粉末和低氧含量的 In-Se 半导体芯复合 材料 光纤粉末的 X 射线衍射对比图，由图 1 可知，普通 In-Se 半导体芯复合 材料 光纤含有大量 InSe 化合物和少量 In 单质晶体，而低氧含量的 In-Se 半导体芯复合 材料 光纤含有大量 In4Se3 和少量 InSe 化合物晶体，说明低氧含量的 In-Se 半导体芯复合 材料 光纤中， In 与 Se 的化合反应更为完全。
图 2a 和图 2b 分别为普通 In-Se 半导体芯复合 材料 光纤和低氧含量的 In-Se 半导体芯复合 材料 光纤抛光端面的元素线扫描图，由图 2a 和图 2b 可知，低氧含量的 In-Se 半导体芯复合 材料 光纤的含氧量小于 5 wt% ，元素分布相对 普通 In-Se 半导体芯复合 材料 光纤稳定。
图 3 为 低氧含量的 In-Se 半导体芯复合 材料 光纤抛光端面的电子探针波谱仪面扫描图 (O, Si, In, Se) ，由图 3 可知， 低氧含量的 In-Se 半导体芯复合 材料 光纤存在 In 元素的少量偏聚，但没有纤芯裂纹，圆形度也保持较好，表明获得连续且具有低氧含量 In-Se 芯复合 材料 光纤。
实施例 2
低氧含量 Sn-Se 半导体芯复合材料光纤预制棒和光纤的制备 ：
制备方法与实施例 1 制备 低氧含量的 In-Se 半导体芯复合 材料 光纤相同，不同的是：半导体芯原料粉选用锡粉（ Sn, 4N ，熔点 118.7 ℃ ） 和硒粉（ Se, 4N ， 熔点 221 ℃ ） ； 对下端封口的硼硅酸盐玻璃管的长为 15 厘米 ，内径 3 毫米，外径 8 毫米；填充粉末按照 Sn:Se=1:1 原子比混合均匀后，紧密填充到包层玻璃管的中心孔中。
制得的低氧含量 Sn-Se 半导体芯复合材料光纤的直径为 200 微米。
低氧含量 Sn-Se 半导体芯复合材料光纤中的 Sn 与 Se 的化合反应相对完全， 低氧含量 Sn-Se 半导体芯复合材料光纤的含氧量小于 5 wt% ，纤芯为 SnSe 和 SnSe2 混合物，具有良好的高温热敏效应，有望应用于温度传感。
实施例 3
低含氧量 Bi-Te 半导体芯复合材料光纤预制棒和光纤的制备：
制备方法和实施例 1 制备 低氧含量的 In-Se 半导体芯复合 材料 光纤相同，不同的是：半导体芯原料粉选用商业 P 型 Bi-Te 合金棒，机械加工成 10 厘米，直径为 3 毫米的合金细棒，合金棒 熔点约为 585 ℃ ； 对下端封口的硼硅酸盐玻璃管的长为 15 厘米 ，内径 3 毫米，外径 8 毫米 ；将机械加工的合金细棒紧密填充到包层玻璃管的中心孔中。 制得的低含氧量 Bi-Te 半导体芯复合材料光纤的直径为 200 微米。 低含氧量 Bi-Te 半导体芯复合材料光纤光纤中的 Bi 与 Te 的化合反应相对完全， 低含氧量 Bi-Te 半导体芯复合材料光纤的含氧量小于 5 wt% ，元素分布 稳定。 纤芯具有良好的低温热电性能，有望应用于可穿戴低温热电材料发电器件。

Claims (6)

  1. 一种低氧含量半导体芯复合材料光纤预制棒的制备方法，其特征在于，包括如下步骤：
    （ 1 ）在氮气气氛手套箱中，将半导体芯原料粉紧密填充满一端封口的包层玻璃管的中心孔；
    （ 2 ）对填充满半导体芯原料粉的包层玻璃管进行抽真空，同时，热拉玻璃管的另一端封口，将半导体芯原料粉真空密封于包层玻璃管中，得到所述低氧含量半导体芯复合材料光纤预制棒。
  2. 根据权利要求 1 所述的一种低氧含量半导体芯复合材料光纤预制棒的制备方法，其特征在于，步骤（ 1 ）中，所述半导体芯原料包括 Al 、 Ga 、 In 、 Si 、 Ge 、 Sn 、 Pb 、 P 、 As 、 Sb 、 Bi 、 S 、 Se 和 Te 中的一种以上 。
  3. 根据权利要求 1 所述的一种低氧含量半导体芯复合材料光纤预制棒的制备方法，其特征在于，步骤（ 1 ）中，所述包层玻璃管为任一种氧化物玻璃，包括硼硅酸盐玻璃管。
  4. 根据权利要求 1 所述的一种低氧含量半导体芯复合材料光纤预制棒的制备方法，其特征在于，步骤（ 1 ）中，所述包层玻璃管的玻璃软化温度高于半导体芯的熔融温度。
  5. 根据权利要求 1 所述的一种低氧含量半导体芯复合材料光纤预制棒的制备方法，其特征在于，步骤（ 2 ）中，所述抽真空的真空压强为 10-6Pa 至 100kPa 。
  6. 根据权利要求 1 所述的一种低氧含量半导体芯复合材料光纤预制棒的制备方法，其特征在于，将得到的光纤预制棒拉丝，获得低氧量半导体芯复合
    材料光纤， 得到的低氧含量半导体芯复合材料光纤中的氧含量低于5 wt%。
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