WO2018059019A1 - 坩埚、蒸镀装置及蒸镀系统 - Google Patents

坩埚、蒸镀装置及蒸镀系统 Download PDF

Info

Publication number
WO2018059019A1
WO2018059019A1 PCT/CN2017/089355 CN2017089355W WO2018059019A1 WO 2018059019 A1 WO2018059019 A1 WO 2018059019A1 CN 2017089355 W CN2017089355 W CN 2017089355W WO 2018059019 A1 WO2018059019 A1 WO 2018059019A1
Authority
WO
WIPO (PCT)
Prior art keywords
crucible
shape
heating
heating portion
top surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2017/089355
Other languages
English (en)
French (fr)
Chinese (zh)
Inventor
张永峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to US15/580,123 priority Critical patent/US20180298487A1/en
Priority to JP2017563294A priority patent/JP2019534937A/ja
Publication of WO2018059019A1 publication Critical patent/WO2018059019A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material

Definitions

  • the present disclosure relates to the field of evaporation.
  • it relates to a crucible, a vapor deposition apparatus, and an evaporation system.
  • the evaporation process is widely used in the coating production of electronic devices. It provides for placing the raw material in a device such as a crucible, heating the raw material to a certain temperature by a heating source, causing the raw material to evaporate or sublimate, and then depositing on the surface of the substrate to be film-formed to complete the coating.
  • a reactive metal such as Mg or Al having a low work function
  • a mixture of Mg and Ag (9:1) is commonly used to balance various aspects of performance.
  • the Mg metal is very active, it is inevitable to react with the residual O 2 and N 2 in the vapor deposition chamber during the long-term vapor deposition to form a sheet-like "magnesium ash" impurity. As time goes by, more and more, some impurities move with the vapor-deposited Mg radicals to the surface of the glass substrate and attach to the substrate, thereby causing display defects.
  • Embodiments of the present disclosure provide a crucible, an evaporation device, and an evaporation system capable of solving the problem that impurities generated in the evaporation process may contaminate the evaporation chamber and impurities may move to the vapor-deposited substrate along with the vapor-deposited material. The problem.
  • a first aspect of the present disclosure provides a flaw.
  • Said ⁇ includes for accommodating a containment chamber of thermal material, wherein the crucible further includes a collector located in the accommodation chamber, and an opening of the collector faces a top of the accommodation chamber.
  • the crucible further includes a flip cover disposed on the receiving chamber, the flip cover having at least one hole, wherein an area of the top surface of the hole on a side away from the receiving chamber An area smaller than a bottom surface of the hole on a side facing the accommodation chamber.
  • the top surface and the bottom surface have a circular shape, and wherein the top surface has a diameter ranging from 0.5 to 2 mm and the bottom surface has a diameter ranging from 2 to 4 mm.
  • the cross-sectional shape of the aperture in a plane perpendicular to the top surface is an isosceles trapezoidal shape.
  • the crucible further includes a thermally conductive plate disposed at a bottom of the containment chamber.
  • the heat conducting plate is configured to have a honeycomb shape in a cross-sectional shape on a plane parallel to the top surface.
  • the shape of the collector comprises a funnel shape, an ellipsoidal shape or a plate shape.
  • Another object of the present disclosure is to provide an evaporation apparatus.
  • a second aspect of the present disclosure provides an evaporation apparatus comprising a heating source and a crucible as described above, wherein the heating source is for heating the crucible.
  • the heating source is disposed on a side of the crucible, and the heating source includes a first heating portion and a second heating portion disposed along a direction from the bottom of the crucible to the lid, wherein The second heating portion is located above the first heating portion, and wherein the second heating portion is for providing a second heating temperature that is higher than a first heating temperature provided by the first heating portion.
  • Still another object of the present disclosure is to provide an evaporation system.
  • a third aspect of the present disclosure provides an evaporation system comprising the evaporation apparatus as described above.
  • FIG. 1 is a schematic illustration of a crucible in accordance with an embodiment of the present disclosure
  • FIG. 2(a) is a schematic illustration of a crucible in accordance with an embodiment of the present disclosure
  • FIG. 2(b) is a partial enlarged view of a flip cover according to an embodiment of the present disclosure
  • FIG. 3 is a schematic illustration of a crucible in accordance with an embodiment of the present disclosure.
  • FIG. 4 is a top plan view of a thermally conductive plate in accordance with an embodiment of the present disclosure
  • Figure 5 (a) is a schematic illustration of a crucible in accordance with one embodiment of the present disclosure
  • Figure 5 (b) is a schematic illustration of a crucible in accordance with another embodiment of the present disclosure.
  • FIG. 6 is a schematic view of an evaporation device in accordance with an embodiment of the present disclosure.
  • FIG. 7 is a schematic diagram of an evaporation apparatus in accordance with an embodiment of the present disclosure.
  • the terms “upper”, “lower”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom” and The derivative should refer to the public text.
  • the terms “overlay”, “on top of”, “positioned on” or “positioned on top of” mean that a first element, such as a first structure, exists in a second element, such as a second structure. Above, wherein an intermediate element such as an interface structure may exist between the first element and the second element.
  • Terminology “Touch” means connecting a first element such as a first structure and a second element such as a second structure, with or without other elements at the interface of the two elements.
  • FIG. 1 is a schematic illustration of a crucible in accordance with an embodiment of the present disclosure.
  • the crucible includes a housing chamber 1 for accommodating the material to be heated.
  • the crucible also includes a collector 2 located in the containment chamber 1 with the opening 21 of the collector 2 facing the top of the containment chamber 1.
  • the crucible also includes a support device 3 for supporting the collector 2.
  • the support device 3 can be a card slot.
  • the support device 3 is exemplified as a component independent of the collector 2. It will be appreciated that the collector 2 can be supported by itself in the crucible without the need for a special support device 3.
  • the size and specific location of the collector can be set according to actual needs, and the disclosure does not limit this.
  • impurities generated during the evaporation process can be collected by the collector, reducing the accommodation for a vacuum evaporation chamber, for example.
  • the contamination of the chamber and the probability of depositing impurities onto the substrate are reduced, thereby significantly reducing the probability of impurities being deposited on the substrate causing anomalies.
  • the crucible further includes a flip cover 4 disposed on the receiving chamber, and the flip cover has at least one hole 5.
  • the surface of the hole on the side away from the accommodation chamber is defined as a "top surface”
  • the surface of the hole on the side facing the accommodation chamber is defined as a "bottom surface”. It can be seen that the area of the top surface of the aperture 5 is smaller than the area of the bottom surface of the aperture.
  • the hole 5 is an opening having a thin upper portion and a thick lower portion.
  • FIG. 2(b) is a partial enlarged view of a flip cover in accordance with an embodiment of the present disclosure. As can be more clearly seen from Fig. 2(b), the area of the top surface S1 of the hole 5 is smaller than the area of the bottom surface S2 of the hole.
  • the vapor flow and the moving direction of the vapor-deposited material can be stabilized, so that the vapor-deposited material (for example, Mg) can escape more and can restrict impurities.
  • the pores may be set to have a specific size in order to better limit the escape of impurities and promote the escape of the vapor-deposited material in consideration of the size of the impurities and the material to be vapor-deposited.
  • the top and bottom surfaces of the hole may be arranged to have a circular shape and the top surface may be straight
  • the range of the diameter is set to be about 0.5 to 2 mm, and the range of the diameter of the bottom surface is set to about 2-4 mm.
  • the cross-sectional shape of the aperture in a plane perpendicular to the top surface is an isosceles trapezoidal shape.
  • the holes can be conical holes.
  • Such an opening design can limit the undesired material (for example, flake magnesia) from escaping, and can correct the desired direction of movement of the vapor-deposited material (eg, Mg radicals) to cause vaporized material molecules.
  • the direction of motion is as vertical as possible.
  • the crucible further includes a heat conducting plate 6 disposed at the bottom of the containing chamber 1.
  • a heat conducting plate By providing a heat conducting plate, the contact area of the vapor-deposited material such as magnesium and the crucible is increased, so that the vapor-deposited material can be more uniformly heated, and the evaporation rate of the vapor-deposited material can be stabilized, thereby achieving a better vapor deposition effect.
  • the heat conducting plate can also be integrated with the bottom of the crucible.
  • the heat conducting plate in the crucible is configured to have a honeycomb shape in a sectional shape on a plane parallel to the top surface.
  • the honeycomb shape of the heat conducting plate in FIG. 4 includes a plurality of hexagons only for exemplary purposes, and is not intended to limit the honeycomb shape of the heat conducting plate.
  • the honeycomb shape of the heat conducting plate can be set according to actual needs.
  • the honeycomb shape may also include a plurality of circles, quadrangles, pentagons, heptagons, and the like.
  • the shape of the collector is not limited to the funnel shape shown in the above figures, and may include an ellipsoidal shape, a plate shape, and the like, which is not limited in the present disclosure.
  • the shape of the collector can be set to any desired shape as needed.
  • Figure 5 (a) is a schematic illustration of a file in accordance with one embodiment of the present disclosure.
  • Fig. 5(a) is exemplified by the shape of the collector 2 being an ellipsoidal shape. It will be appreciated that the support means 3 for supporting the collector 2 in the crucible is not necessary. The collector can be placed in the crucible without the need for a special support device.
  • FIG. 5(b) is a schematic diagram of a crucible in accordance with another embodiment of the present disclosure.
  • Fig. 5(b) is exemplified by the shape of the collector 2 being a plate shape.
  • the shape of the plate in Fig. 5(b) is merely exemplary, and is not limited to a flat plate shape, and the groove-like structure having an opening also belongs to the "plate shape" herein.
  • Another aspect of the present disclosure also provides an evaporation apparatus comprising the crucible as described above and a heating source for heating the crucible.
  • FIG. 6 is a schematic illustration of an evaporation apparatus in accordance with an embodiment of the present disclosure.
  • the vapor deposition apparatus includes a heat source 7 and a crucible as described above, wherein the heat source is used to heat the crucible.
  • FIG. 7 is a schematic diagram of an evaporation apparatus in accordance with an embodiment of the present disclosure.
  • the heat source of the vapor deposition device is disposed on the side of the crucible, and the heating source includes a first heating portion 71 and a second heating portion 72 disposed along the bottom of the crucible to the lid, wherein the second heating The portion 72 is located above the first heating portion 71.
  • the second heating portion is for providing a second heating temperature that is higher than a first heating temperature provided by the first heating portion.
  • the first heating portion and the second heating portion thus disposed, it is possible to prevent the vapor-deposited material molecules (for example, Mg radicals) from being subjected to a temperature which is slightly lower in temperature, and deposition occurs, resulting in a hole in the lid. Blocked.
  • the vapor-deposited material molecules for example, Mg radicals
  • the heating temperature of the second heating portion may be set to be higher than the heating temperature of the first heating portion, and the difference between the two ranges from about 50 to 100 ° C to better enable evaporation.
  • the material escapes from the containment chamber.
  • the heating temperature range of the first heating portion may be set to about 450 to 500 ° C
  • the heating temperature range of the second heating portion may be set to about 500 to 550 °C.
  • Yet another aspect of the present disclosure also provides an evaporation system including the evaporation apparatus as described above.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
PCT/CN2017/089355 2016-09-27 2017-06-21 坩埚、蒸镀装置及蒸镀系统 Ceased WO2018059019A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US15/580,123 US20180298487A1 (en) 2016-09-27 2017-06-21 Crucible, evaporation device and evaporation apparatus
JP2017563294A JP2019534937A (ja) 2016-09-27 2017-06-21 坩堝、蒸着装置及び蒸着システム

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610850525.3 2016-09-27
CN201610850525.3A CN106191785B (zh) 2016-09-27 2016-09-27 坩埚、蒸镀装置及蒸镀系统

Publications (1)

Publication Number Publication Date
WO2018059019A1 true WO2018059019A1 (zh) 2018-04-05

Family

ID=57520791

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/089355 Ceased WO2018059019A1 (zh) 2016-09-27 2017-06-21 坩埚、蒸镀装置及蒸镀系统

Country Status (4)

Country Link
US (1) US20180298487A1 (enExample)
JP (1) JP2019534937A (enExample)
CN (1) CN106191785B (enExample)
WO (1) WO2018059019A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106191785B (zh) * 2016-09-27 2018-09-18 京东方科技集团股份有限公司 坩埚、蒸镀装置及蒸镀系统
CN109722633B (zh) * 2017-10-31 2021-07-06 上海和辉光电股份有限公司 一种坩埚及蒸镀装置
CN109355628B (zh) * 2018-12-05 2020-01-21 深圳市华星光电技术有限公司 蒸镀坩埚

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990012485A2 (en) * 1989-04-21 1990-11-01 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Multiple source evaporation for alloy production
CN102605194A (zh) * 2012-03-16 2012-07-25 葫芦岛锌业股份有限公司 一种真空蒸馏制备高纯锌的方法
CN203451609U (zh) * 2013-09-26 2014-02-26 京东方科技集团股份有限公司 一种蒸镀坩埚
CN203582959U (zh) * 2013-12-06 2014-05-07 京东方科技集团股份有限公司 一种蒸镀装置
CN104018122A (zh) * 2014-06-10 2014-09-03 京东方科技集团股份有限公司 一种收集装置
WO2015129091A1 (ja) * 2014-02-27 2015-09-03 日立アロカメディカル株式会社 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法
CN105755432A (zh) * 2016-04-13 2016-07-13 京东方科技集团股份有限公司 一种蒸镀罩和蒸镀设备
CN106191785A (zh) * 2016-09-27 2016-12-07 京东方科技集团股份有限公司 坩埚、蒸镀装置及蒸镀系统

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6237529B1 (en) * 2000-03-03 2001-05-29 Eastman Kodak Company Source for thermal physical vapor deposition of organic electroluminescent layers

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990012485A2 (en) * 1989-04-21 1990-11-01 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Multiple source evaporation for alloy production
CN102605194A (zh) * 2012-03-16 2012-07-25 葫芦岛锌业股份有限公司 一种真空蒸馏制备高纯锌的方法
CN203451609U (zh) * 2013-09-26 2014-02-26 京东方科技集团股份有限公司 一种蒸镀坩埚
CN203582959U (zh) * 2013-12-06 2014-05-07 京东方科技集团股份有限公司 一种蒸镀装置
WO2015129091A1 (ja) * 2014-02-27 2015-09-03 日立アロカメディカル株式会社 結晶育成用るつぼおよびそれを備えた結晶育成装置ならびに結晶育成方法
CN104018122A (zh) * 2014-06-10 2014-09-03 京东方科技集团股份有限公司 一种收集装置
CN105755432A (zh) * 2016-04-13 2016-07-13 京东方科技集团股份有限公司 一种蒸镀罩和蒸镀设备
CN106191785A (zh) * 2016-09-27 2016-12-07 京东方科技集团股份有限公司 坩埚、蒸镀装置及蒸镀系统

Also Published As

Publication number Publication date
US20180298487A1 (en) 2018-10-18
CN106191785B (zh) 2018-09-18
CN106191785A (zh) 2016-12-07
JP2019534937A (ja) 2019-12-05

Similar Documents

Publication Publication Date Title
US9790588B2 (en) Heating device for evaporation of OLED material
TW201906069A (zh) 基板支撐裝置
WO2018059019A1 (zh) 坩埚、蒸镀装置及蒸镀系统
JP2007284788A (ja) 蒸着源および蒸着装置
WO2019114806A1 (zh) 蒸镀载板及蒸镀装置
JP2016535430A (ja) 炭素繊維リングサセプタ
CN106893982A (zh) 一种冷却板和蒸镀装置
CN101090994A (zh) 掩模保持机构以及成膜装置
CN107190245A (zh) 用于蒸镀装置的载板及其蒸镀装置
JP7376426B2 (ja) 真空蒸着装置用の蒸着源
JP2016509985A (ja) 基板用キャリア
JP6681125B2 (ja) 材料を収容・加熱する坩堝及び坩堝と加熱器セットを含むシステム
TW201221681A (en) Sputtering device
CN102400108A (zh) 薄膜沉积机台及其承载件
CN104934345B (zh) 一种等离子体装置
CN105543784B (zh) 一种蒸镀系统
CN105420675A (zh) 一种减少蒸发镀膜设备中衬底或其上的材料受烘烤升温影响的装置及应用
CN105803425B (zh) 金属有机化合物气相沉积反应装置的反应基座
CN204356396U (zh) 一种新型光学镀膜坩埚
TWI592508B (zh) 多層遮罩
JP2008218995A (ja) 大面積基板処理システムのサセプタ・ヒータアセンブリ
CN223201899U (zh) 加热机构及镀膜设备
CN201751428U (zh) 具有加热罩的真空蒸镀装置
TW201842608A (zh) 於後選擇性蝕刻製程中減少基板上粒子形成之設備及方法
JP2008013850A (ja) 蒸着装置とその輸送システム

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2017563294

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 15580123

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17854473

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17854473

Country of ref document: EP

Kind code of ref document: A1