WO2018051907A1 - 上層膜形成組成物及び相分離パターン製造方法 - Google Patents
上層膜形成組成物及び相分離パターン製造方法 Download PDFInfo
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- WO2018051907A1 WO2018051907A1 PCT/JP2017/032434 JP2017032434W WO2018051907A1 WO 2018051907 A1 WO2018051907 A1 WO 2018051907A1 JP 2017032434 W JP2017032434 W JP 2017032434W WO 2018051907 A1 WO2018051907 A1 WO 2018051907A1
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- block copolymer
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Definitions
- the present invention relates to an upper layer film forming composition and a phase separation pattern manufacturing method.
- an upper layer film is provided on the block copolymer layer and thermal annealing, etc.
- a technique for performing control and controlling to a desired lithographic pattern is well known.
- the conventional upper layer film dissolves quickly in hydrophilic solvents such as water, methanol, and isopropanol, but does not exhibit high solubility in hydrophobic solvents such as diisoamyl ether.
- an upper layer that can cause a vertical alignment of the block copolymer without dissolving or swelling the layer containing the block copolymer formed on the substrate, and provides an upper layer film that exhibits good solubility in a hydrophobic solvent. Development of a film-forming composition is awaited.
- the present invention includes the following.
- the unit structure derived from the maleimide structure has the formula (1): (In formula (1), R 1 represents a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms which may be substituted with a halogen atom.
- R 1 represents a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms which may be substituted with a halogen atom.
- the composition according to [1] represented by: [3]
- the unit structure derived from the styrene structure is represented by the formula (2): (In the formula (2), R 2 to R 4 , R 7 and R 8 are each independently a hydrogen atom, an alkoxy group having 1 to 5 carbon atoms, or a carbon atom 1 which may be substituted with a halogen atom.
- the copolymer (A) further includes (b) a unit structure derived from a (meth) acryl group.
- the unit structure derived from the (meth) acryl group has the formula (3): (In Formula (3), R 5 and R 6 are each independently a hydrogen atom, an alkoxy group having 1 to 5 carbon atoms, or a straight chain having 1 to 10 carbon atoms which may be substituted with a halogen atom, Represents a branched or cyclic alkyl group.)
- R 2 to R 4 , R 7 and R 8 are each independently a hydrogen atom, an alkoxy group having 1 to 5 carbon atoms, or a carbon atom 1 which may be substituted with a halogen atom.
- composition according to any one of [1] to [5], comprising a copolymer (A) obtained by copolymerizing a monomer mixture containing a compound represented by the formula: [7] (1) A step of forming a block copolymer layer on a substrate, (2) forming an upper film on the block copolymer layer using the composition according to any one of [1] to [6], and (3) a block formed on the substrate. Phase-separating the copolymer layer; A method for forming a phase separation pattern of a block copolymer.
- [8] A step of forming a block copolymer layer on a substrate, (2) forming an upper layer film on the block copolymer layer using the composition according to any one of [1] to [6]; (3) phase-separating the block copolymer layer formed on the substrate; and (4) etching the phase-separated block copolymer layer.
- a pattern manufacturing method including: [9] (1) A step of forming a block copolymer layer on a substrate, (2) forming an upper layer film on the block copolymer layer using the composition according to any one of [1] to [6]; (3) a step of phase-separating the block copolymer layer formed on the substrate; (4) etching the phase-separated block copolymer layer; and (5) etching the substrate.
- a method for manufacturing a semiconductor device comprising: [10] An upper layer film used for phase-separating a layer containing a block copolymer formed on a substrate, (A) (a) An upper layer film comprising a copolymer comprising a unit structure derived from a maleimide structure and a unit structure derived from a styrene structure. [11] a layer containing a block copolymer formed on a substrate; (A) (a) A laminate comprising an upper film layer comprising a unit structure derived from a maleimide structure and a copolymer comprising a unit structure derived from a styrene structure.
- the upper layer film produced using the upper layer film-forming composition of the present invention exhibits good solubility in a hydrophobic solvent that does not dissolve the block copolymer, and can cause vertical alignment of the block copolymer.
- the upper film forming composition according to the present invention is an upper film forming composition used for phase-separating a layer containing a block copolymer formed on a substrate, (A) (a) a copolymer comprising a unit structure derived from a maleimide structure and a unit structure derived from a styrene structure; (B) An upper layer film-forming composition containing an ether compound having 8 to 16 carbon atoms as a solvent.
- the present composition can be used as an upper layer film-forming composition that is formed on a block copolymer thin film and then removed after the orientation of the block copolymer is controlled by heating. Even with a block copolymer layer that cannot be oriented only by heating, orientation can be achieved by using an upper layer film formed of the present composition.
- maleimide structure and “styrene structure” refer to chemical structures having maleimide and styrene as skeletons, respectively.
- “Derived unit structure” refers to a repeating unit that is derived from the compound having the maleimide structure or the styrene structure while maintaining the skeleton thereof and forms the main chain of the copolymer.
- the unit structure derived from the maleimide structure has the formula (1): (In formula (1), R 1 represents a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms which may be substituted with a halogen atom. Represented).
- the unit structure derived from the styrene structure has the formula (2): (In the formula (2), R 2 to R 4 , R 7 and R 8 are each independently a hydrogen atom, an alkoxy group having 1 to 5 carbon atoms, or a carbon atom 1 which may be substituted with a halogen atom. Represents a linear, branched or cyclic alkyl group of ⁇ 10). R 7 and R 8 are preferably a hydrogen atom.
- the molar ratio of the unit structure represented by Formula (1) and Formula (2) to the entire copolymer (A) is based on the entire copolymer (A).
- Structural unit of formula (1) 30 to 70 mol%
- Structural unit of formula (2) 20 to 50 mol% It is desirable that
- the copolymer (A) can contain a unit structure derived from (b) (meth) acrylic group in addition to the formulas (1) and (2).
- the (meth) acryl group means both an acrylic group and a methacryl group.
- a (meth) acrylate compound means both an acrylate compound and a methacrylate compound.
- (meth) acrylic acid means acrylic acid and methacrylic acid.
- the unit structure derived from the (meth) acryl group has the formula (3):
- R 5 and R 6 are each independently a hydrogen atom, an alkoxy group having 1 to 5 carbon atoms, or a straight chain having 1 to 10 carbon atoms which may be substituted with a halogen atom, Represents a branched or cyclic alkyl group).
- the molar ratio of the unit structure of the formula (3) to the entire copolymer (A) is 0.1 to 50 mol%, more preferably 0.1 to 30 mol%, still more preferably relative to the entire copolymer (A). Is from 0.1 to 20 mol%, most preferably from 0.1 to 10 mol%.
- examples of the linear, branched or cyclic alkyl group having 1 to 10 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, Cyclopropyl group, n-butyl group, i-butyl group, s-butyl group, t-butyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, n-pentyl group, 1- Methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2 -Dimethyl-n-propyl group, 1-ethyl-n-propyl group, 1,1-diethyl-n-propyl group, cyclopentyl group,
- examples of the aryl group having 6 to 10 carbon atoms include a phenyl group, a benzyl group and a naphthyl group.
- examples of the alkoxy group having 1 to 5 carbon atoms include methoxy group, ethoxy group, n-propoxy group, i-propoxy group, cyclopropoxy group, n- Butoxy, i-butoxy, s-butoxy, t-butoxy, cyclobutoxy, 1-methyl-cyclopropoxy, 2-methyl-cyclopropoxy, n-pentoxy, 1-methyl-n-butoxy Group, 2-methyl-n-butoxy group, 3-methyl-n-butoxy group, 1,1-dimethyl-n-propoxy group, 1,2-dimethyl-n-propoxy group, 2,2-dimethyl-n- Propoxy group, 1-ethyl-n-propoxy group, 1,1-diethyl-n-propoxy group, cyclopentoxy group, 1-methyl-cyclobutoxy group, 2-methyl-cyclobutoxy group 3-methyl - cyclobutoxy group, 1,2-dimethyl - cyclopropoxy group, 2,3-d
- halogen atoms include F, Cl, Br, and I.
- the distribution of the unit structure represented by the formulas (1), (2), and (3) in the copolymer (A) is not particularly limited. That is, in the copolymer (A), the unit structures represented by the formulas (1) and (2) may be alternately copolymerized or randomly copolymerized. When the unit structure represented by the formula (3) coexists, the unit structures represented by the formulas (1), (2), and (3) in the copolymer (A) each constitute a block. Or may be combined randomly.
- the repeating number of the unit structures represented by the formulas (1), (2) and (3) in the copolymer (A) is within the range of mol% of each unit structure described above, and
- the weight average molecular weight Mw of the union (A) can be appropriately selected within the range of 5,000 to 500,000, preferably 10,000 to 100,000.
- the method for producing the copolymer (A) used in the present invention has the formula (4):
- R 1 represents a hydrogen atom, a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms which may be substituted with a halogen atom.
- a compound represented by formula (5): (In the formula (5), R 2 to R 4 , R 7 and R 8 are each independently a hydrogen atom, an alkoxy group having 1 to 5 carbon atoms, or a carbon atom 1 which may be substituted with a halogen atom. Represents 10 to 10 linear, branched or cyclic alkyl groups.)
- R 7 and R 8 are preferably a hydrogen atom.
- the monomer mixture optionally includes formula (6): (In Formula (6), R 5 and R 6 are each independently a hydrogen atom, an alkoxy group having 1 to 5 carbon atoms, or a straight chain having 1 to 10 carbon atoms which may be substituted with a halogen atom, Represents a branched or cyclic alkyl group.)
- the compound represented by these can be mix
- the “straight chain, branched or cyclic alkyl group having 1 to 10 carbon atoms”, “aryl group having 6 to 10 carbon atoms”, “alkoxy group having 1 to 5 carbon atoms”, and “halogen atom” are described above. It is as follows.
- the monomer mixture is The compound represented by Formula (4) and Formula (5) is used with respect to the entire copolymer (A).
- the monomer mixture is based on the entire copolymer (A).
- the copolymer (A) can be obtained by a known polymerization method.
- Known polymerization methods include radical polymerization, anionic polymerization, and cationic polymerization.
- Various known techniques such as solution polymerization, suspension polymerization, emulsion polymerization, and bulk polymerization can be used.
- 2,2′-azobis isobutyronitrile
- 1,1′-azobis 1,1′-azobis (cyclohexane-1-carbonitrile), 1-[(1-cyano-1-methylethyl) azo] formamide
- 2,2′- Azobis 2,2′- Azobis (2 Methylpropionamidine) dihydrochloride and the
- Solvents used during polymerization include dioxane, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monomethyl ether Acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, cyclopentanone, cyclohexanone, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate, ethyl hydroxyacetate, 2-hydroxy-3-methylbutane Methyl acid, 3-meth Use of methyl cypropionate, ethyl 3-methoxypropionate, ethyl 3-e
- the reaction conditions are 50 ° C. to 200 ° C., and a stirring reaction is performed for 1 hour to 48 hours, whereby the copolymer (A) used in the present invention is obtained.
- the solution containing the copolymer (A) thus obtained can be used as it is for the preparation of the upper layer film-forming composition.
- the copolymer (A) can also be recovered by precipitation by precipitation in a poor solvent such as methanol, ethanol, isopropanol, water, or a mixed solvent thereof.
- the copolymer (A) After isolating the copolymer (A), it may be used by re-dissolving in the ether compound having 8 to 16 carbon atoms as described below, or after drying. Desirable drying conditions are 30 to 100 ° C. for 6 to 48 hours in an oven or the like. After the copolymer (A) is recovered, it can be redissolved in an ether compound having 8 to 16 carbon atoms described below to prepare as a composition of the present invention, and can be used as an upper layer film-forming composition.
- the weight average molecular weight of the copolymer (A) used in the present invention varies depending on the coating solvent used, the solution viscosity, etc., but is, for example, 5 in terms of polystyrene. 1,000 to 500,000, preferably 10,000 to 100,000.
- the solvent used in the composition of the present invention is an ether compound having 8 to 16 carbon atoms. More specifically, an ether compound having 8 to 16 carbon atoms (hereinafter sometimes referred to as “ether solvent”) used as a solvent in the composition of the present application is represented by the following formula (6).
- ether solvent an ether compound having 8 to 16 carbon atoms (hereinafter sometimes referred to as “ether solvent”) used as a solvent in the composition of the present application is represented by the following formula (6).
- a 1 and A 2 each independently represent a linear, branched or cyclic saturated alkyl group having 1 to 15 carbon atoms which may be substituted.
- linear, branched or cyclic saturated alkyl group having 1 to 15 carbon atoms include, for example, methyl group, ethyl group, n-propyl group, i-propyl group, cyclopropyl group, n-butyl group, i-butyl group, s-butyl group, t-butyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n -Nonyl group, n-decanyl group, n-undecanyl group, n-dodecanyl group, n-tridecanyl group, n-tetradecanyl group, n-pentadecanyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group Group
- preferred solvents include dibutyl ether, diisobutyl ether, di-tert-butyl ether, dipentyl ether, diisoamyl ether, dihexyl, which have a good balance between the solubility of copolymer (A) and the insolubility of the block copolymer of the present application.
- examples include ether, dioctyl ether, and cyclopentyl methyl ether, and more preferable solvents are dibutyl ether, diisobutyl ether, and diisoamyl ether, and particularly preferable is diisoamyl ether.
- These ether solvents can be used alone or as a mixture.
- the following organic solvent may be mixed with the ether solvent.
- the solvent include those mentioned in the section of the production method for the copolymer (A).
- the solvent other than the ether solvent may be present in a ratio of 0.01 to 13% by mass with respect to the ether solvent.
- the upper layer film-forming composition according to the present invention may further contain additives such as a surfactant and a rheology modifier.
- rheology modifiers can be added to the upper layer film-forming composition of the present invention as necessary.
- the rheology modifier is added mainly for the purpose of improving the fluidity of the composition of the present invention.
- phthalic acid derivatives such as dimethyl phthalate, diethyl phthalate, diisobutyl phthalate, dihexyl phthalate, and butyl isodecyl phthalate; Mention may be made of maleic acid derivatives such as normal butyl maleate, diethyl maleate and dinonyl maleate, oleic acid derivatives such as methyl oleate, butyl oleate and tetrahydrofurfuryl oleate, or stearic acid derivatives such as normal butyl stearate and glyceryl stearate. it can.
- These rheology modifiers are usually blended at a ratio of less than 30% by mass with respect to 100% by mass of the entire composition of the present invention.
- a surfactant can be blended in order to further improve the applicability to surface unevenness.
- the surfactant include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene alkyl ethers such as polyoxyethylene oleyl ether, polyoxyethylene octylphenol ether, polyoxyethylene nonyl Polyoxyethylene alkyl aryl ethers such as phenol ether, polyoxyethylene / polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate Sorbitan fatty acid esters such as rate, polyoxyethylene sorbitan monolaurate, polyoxyethylene Nonionic surfactants such as polyoxyethylene sorbitan
- the content of the copolymer (A) in the solid content in the composition is preferably 20% by mass or more, for example, 20 to 100% by mass, or 30 to 100% by mass.
- the solid content of the composition of the present invention is preferably 0.1 to 50% by mass, more preferably 0.3 to 30% by mass.
- the solid content is obtained by removing the solvent component from the upper layer film-forming composition.
- the copolymer (A), an ether compound having 8 to 16 carbon atoms as a solvent, and, if necessary, the above additives are mixed according to the above composition, for example, stirred at room temperature to 40 ° C.
- An upper layer film-forming composition can be produced.
- composition for forming an upper layer film according to the present invention is used for phase separation of a layer containing a block copolymer formed on a substrate.
- the method for forming a phase separation pattern of a block copolymer according to the present invention includes: (1) forming a block copolymer layer on a substrate; (2) a step of forming an upper layer film on the block copolymer layer using the upper layer film-forming composition, and (3) a step of phase-separating the block copolymer layer formed on the substrate, including.
- the block copolymer is a combination of a plurality of types of polymers (blocks) that are chemically different and covalently bonded to each other.
- block copolymers many applications have been proposed based on their ability to form nanometer scale patterns.
- the self-assembly pattern of a block copolymer can be used as a nanolithographic mask or template for further synthesis of inorganic or organic structures. This can be realized by utilizing the fact that the etching rate is different between the respective blocks.
- the block copolymer used in the present invention comprises an organic polymer chain (A) containing an organic monomer (a) as a unit structure and a monomer (b) different from the organic monomer (a) as a unit structure. And a polymer chain (B) bonded to.
- the self-assembled film-forming composition may have a solid content of 0.1 to 10% by mass, or 0.1 to 5% by mass, or 0.1 to 3% by mass. Solid content is the remaining ratio which remove
- the proportion of the block copolymer in the solid content can be 30 to 100% by mass, or 50 to 100% by mass, or 50 to 90% by mass, or 50 to 80% by mass.
- the type of block present in the block copolymer can be 2 or 3 or more.
- the number of blocks present in the block copolymer can be 2 or 3 or more.
- the adjacent polymer chain (C) containing the monomer (c) as a unit structure can be used.
- the block polymer include combinations of AB, ABAB, ABA, ABC and the like.
- the polymerization process consists only of an initiation reaction and a growth reaction, and can be obtained by living radical polymerization or living cation polymerization without a side reaction that deactivates the growth terminal. The growth terminal can continue to maintain a growth active reaction during the polymerization reaction. By eliminating chain transfer, a polymer (A) having a uniform length can be obtained.
- polymerization proceeds under the monomer (b) to form a block copolymer (AB).
- a block copolymer for example, when there are two types of blocks, A and B, the polymer chain (A) and the polymer chain (B) have a molar ratio of 1: 9 to 9: 1, preferably 3: 7 to 7: 3. be able to.
- the volume ratio of the block copolymer of the present application is, for example, 30:70 to 70:30.
- Homopolymer A or B is a polymerizable compound having at least one reactive group capable of radical polymerization (vinyl group or vinyl group-containing organic group).
- the weight average molecular weight Mw of the block copolymer used in the present invention is preferably 1,000 to 100,000, or 5,000 to 100,000. If it is less than 1000, the applicability to the base substrate may be poor, and if it is 100,000 or more, the solubility in a solvent may be poor.
- the polydispersity (Mw / Mn) of the block copolymer of the present application is preferably 1.00 to 1.50, particularly preferably 1.00 to 1.20.
- Specific examples of the block copolymer include a combination of an aromatic polymer chain and an acrylic resin polymer chain.
- a combination of a poly (vinylpyridine) derivative polymer and a polyacrylate derivative polymer such as poly (4-vinylpyridine) and polymethyl methacrylate, a polyacrylic acid derivative polymer and a polystyrene derivative polymer, Or a combination of a poly (hydroxystyrene) derivative polymer and a polyacrylate derivative polymer.
- Silicon-containing polymer chains and non-silicon-containing polymers such as polysilanes such as polydihexylsilane, polysiloxanes such as polydimethylsiloxane, silylated polystyrene derivatives such as poly (trimethylsilylstyrene) and poly (pentamethyldisilylstyrene)
- silylated polystyrene derivatives such as poly (trimethylsilylstyrene) and poly (pentamethyldisilylstyrene)
- a combination with a chain is also preferable because, for example, a difference in dry etching rate can be increased.
- the silylated polystyrene derivative is preferably poly (4-trimethylsilylstyrene) or poly (4-pentamethyldisilylstyrene) having a substituent at the 4-position.
- a combination of a silylated polystyrene derivative and a polystyrene derivative polymer, a combination of two different polystyrene derivative polymers, or a combination of a silylated polystyrene derivative polymer and a polylactide is preferable.
- a combination of a silylated polystyrene derivative having a substituent at the 4-position and a polystyrene derivative polymer having a substituent at the 4-position a combination of two different types of polystyrene derivative polymers having a substituent at the 4-position, or substitution
- a combination of a silylated polystyrene derivative polymer having a group at the 4-position and polylactide is preferred.
- block copolymer More preferable specific examples of the block copolymer include a combination of poly (trimethylsilylstyrene) and polymethoxystyrene, a combination of polystyrene and poly (tert-butylstyrene), a combination of polystyrene and poly (trimethylsilylstyrene), and poly (trimethylsilyl).
- block copolymer examples include a combination of poly (4-trimethylsilylstyrene) and poly (4-methoxystyrene), a combination of polystyrene and poly (4-tert-butylstyrene), polystyrene and poly (4- And a combination of poly (4-trimethylsilylstyrene) and poly (D, L-lactide).
- the substrate is made of silicon, silicon oxide, glass, surface-modified glass, plastic, ceramic, transparent substrate, flexible substrate, and substrate (or a combination thereof) used in roll-to-roll processing. Selected from. A silicon wafer, quartz, glass, or plastic is preferable, and a silicon wafer is more preferable.
- the base material may be provided with a lower layer film for neutralizing the surface energy if necessary.
- the lower layer film is applied on the substrate by a conventional means such as spin coating so as to have a predetermined film thickness, and then heated, immersed, or the like as necessary.
- the block copolymer is applied on the base material or the lower layer film so as to have a predetermined film thickness by a conventional means such as spin coating.
- the upper layer film forming composition is as described above.
- the upper layer film-forming composition thus prepared is applied onto the block copolymer layer by a conventional means such as spin coating to form an upper layer film.
- the thickness of the upper film is not particularly limited, but is generally 3 nm to 100 nm, preferably 10 to 70 nm, and particularly preferably 20 to 60 nm. If it is 3 nm or less, a desired uniform block copolymer phase separation pattern cannot be formed. If it is 100 nm or more, it takes too much time during etching, which is not preferable.
- the upper layer film-forming composition according to the present invention is very advantageous because it is dissolved in a solvent or solvent mixture that does not damage, dissolve, or substantially swell the block copolymer.
- phase separation of the block copolymer layer is a process that causes rearrangement of the block copolymer material in the presence of the upper layer film, for example, ultrasonic treatment, solvent treatment. , Thermal annealing or the like. In many applications it is desirable to achieve phase separation of the block copolymer layer simply by heating or so-called thermal annealing. Thermal annealing can be performed under atmospheric pressure, reduced pressure, or pressurized conditions in the air or in an inert gas.
- a block copolymer domain oriented substantially perpendicular to the substrate or lower layer film surface is formed.
- the form of the domain is, for example, lamellar, spherical or cylindrical.
- the domain interval is, for example, 50 nm or less. According to the method of the present invention, it is possible to form a structure having a desired size, shape, orientation and periodicity.
- the upper layer film can be peeled after phase separation of the block copolymer layer. Peeling can be performed using, for example, a solvent or a mixture of solvents (peeling solvent) that does not damage, dissolve, or substantially swell the block copolymer.
- peeling solvent a solvent or a mixture of solvents (peeling solvent) that does not damage, dissolve, or substantially swell the block copolymer.
- the peeled upper layer film composition can be isolated and reused. Isolation can be carried out by a conventional means such as precipitation or distillation.
- the pattern manufacturing method includes: (1) forming a block copolymer layer on a substrate; (2) A step of forming an upper layer film on the block copolymer layer using the upper layer film forming composition, (3) phase-separating the block copolymer layer formed on the substrate; and (4) etching the phase-separated block copolymer layer. including.
- the block copolymer layer phase-separated by the above method can be further subjected to a step of etching it. Usually, a part of the phase-separated block copolymer is removed before etching. Etching can be performed by known means. This method can be used for the manufacture of semiconductor substrates.
- a method for manufacturing a semiconductor device includes: (1) forming a block copolymer layer on a substrate; (2) A step of forming an upper layer film on the block copolymer layer using the upper layer film forming composition, (3) a step of phase-separating the block copolymer layer formed on the substrate; (4) etching the phase-separated block copolymer layer; and (5) etching the substrate. including.
- Etching includes, for example, tetrafluoromethane (CF 4 ), perfluorocyclobutane (C 4 F 8 ), perfluoropropane (C 3 F 8 ), trifluoromethane, carbon monoxide, argon, oxygen, nitrogen, sulfur hexafluoride Gases such as difluoromethane, nitrogen trifluoride and chlorine trifluoride, chlorine, trichloroborane and dichloroborane can be used. A halogen-based gas is preferably used, more preferably a fluorine-based gas.
- fluorine-based gas examples include tetrafluoromethane (CF 4 ), perfluorocyclobutane (C 4 F 8 ), and perfluoropropane (C 3 F 8), trifluoromethane, and difluoromethane (CH 2 F 2), and the like.
- phase-separated block copolymer layer pattern formed using the upper layer film-forming composition according to the present invention a desired shape is imparted to the substrate to be processed by etching, and a suitable semiconductor device is manufactured. Is possible.
- the weight average molecular weight (Mw) of the polymer (A) shown in the following synthesis example is a measurement result by a gel permeation chromatography (GPC) method.
- GPC gel permeation chromatography
- a GPC apparatus manufactured by Tosoh Corporation is used, and the measurement conditions are as follows.
- Measuring device HLC-8020GPC [trade name] (manufactured by Tosoh Corporation)
- GPC column TSKgel G2000HXL; 2, G3000HXL: 1, G4000HXL; 1 [trade name] (all manufactured by Tosoh Corporation)
- Column temperature 40 ° C
- Solvent tetrahydrofuran (THF)
- Flow rate 1.0 ml / min
- Standard sample Polystyrene (manufactured by Tosoh Corporation)
- Example 1 (Preparation of upper layer film composition) 0.25 g of the resin obtained in Synthesis Example 1 was dissolved in 9.75 g of diisoamyl ether to obtain a 2.5% by mass solution. Thereafter, the solution was filtered using a polyethylene microfilter having a pore size of 0.2 ⁇ m to prepare a solution of the upper film-forming composition of the self-assembled film.
- underlayer film forming composition 0.1 g of poly (styrene-co-4-tert-butylstyrene) having a hydroxyl group is dissolved in 19.9 g of propylene glycol monomethyl ether acetate to form a 0.5% by mass solution, and then polyethylene having a pore size of 0.02 ⁇ m It filtered using the micro filter made from, and the solution of the lower film
- the underlayer film forming composition of the self-assembled film obtained above is applied onto a silicon wafer, heated on a hot plate at 240 ° C. for 1 minute, and then immersed in propylene glycol monomethyl ether acetate for 1 minute to form an underlayer film ( A layer) was obtained.
- a self-assembled film-forming composition comprising a block copolymer was applied thereon with a spin coater and heated on a hot plate at 100 ° C. for 1 minute to form a self-assembled film (B layer) having a thickness of 40 nm.
- the upper layer film-forming composition was applied thereon by a spinner, and then heated on a hot plate at 210 ° C. for 5 minutes to induce a microphase separation structure of the block copolymer.
- FIG. 1 shows the arrangement of each layer.
- the silicon wafer in which the micro phase separation structure is induced is etched for 30 seconds using an etching apparatus (Lam 2300 Versys Kiyo45) manufactured by Lam Research Co., using O 2 gas as an etching gas, thereby removing the upper layer film.
- the polymethoxystyrene region was preferentially etched, and then the shape was observed with an electron microscope (S-4800) (FIG. 2).
- Example 2 to 5 A sample was prepared and a microphase-separated structure of a block copolymer was formed in the same manner as in Example 1 except that polymers 2 to 5 were used instead of polymer 1.
- the topcoat made using the upper film-forming composition of the present invention exhibits good solubility in a hydrophobic solvent that does not dissolve the block copolymer, causing vertical alignment of the block copolymer. It becomes possible.
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Abstract
Description
[1] 基板上に形成したブロックコポリマーを含む層を相分離させるために用いられる上層膜形成組成物であって、
(A)(a)マレイミド構造に由来する単位構造及びスチレン構造に由来する単位構造を含む共重合体と、
(B)溶剤として、炭素原子数8乃至16のエーテル化合物
とを含む、上層膜形成組成物。
[2] 前記マレイミド構造に由来する単位構造が、式(1):
で表される、[1]に記載の組成物。
[3] 上記スチレン構造に由来する単位構造が、式(2):
で表される、[1]又は[2]に記載の組成物。
[4] 前記(A)共重合体が、さらに
(b)(メタ)アクリル基に由来する単位構造を含む、
[1]~[3]の何れか1項に記載の組成物。
[5] 前記(メタ)アクリル基に由来する単位構造が、式(3):
で表される、[4]に記載の組成物。
[6] 式(4):
で表される化合物と、式(5):
で表される化合物を含むモノマー混合物を共重合させることにより得られる共重合体(A)を含む、[1]~[5]の何れか1項に記載の組成物。
[7] (1)ブロックコポリマー層を基板上に形成する工程、
(2)前記ブロックコポリマー層の上に、[1]~[6]の何れか1項に記載の組成物を用いて上層膜を形成する工程、及び
(3)前記基板上に形成されたブロックコポリマー層を相分離させる工程、
を含む、ブロックコポリマーの相分離パターン形成方法。
[8] (1)ブロックコポリマー層を基板上に形成する工程、
(2)前記ブロックコポリマー層の上に、[1]~[6]の何れか1項に記載の組成物を用いて上層膜を形成する工程、
(3)前記基板上に形成されたブロックコポリマー層を相分離させる工程、及び
(4)前記相分離したブロックコポリマー層をエッチングする工程、
を含む、パターン製造方法。
[9] (1)ブロックコポリマー層を基板上に形成する工程、
(2)前記ブロックコポリマー層の上に、[1]~[6]の何れか1項に記載の組成物を用いて上層膜を形成する工程、
(3)前記基板上に形成されたブロックコポリマー層を相分離させる工程、
(4)前記相分離したブロックコポリマー層をエッチングする工程、及び
(5)前記基板をエッチングする工程、
を含む、半導体装置の製造方法。
[10] 基板上に形成したブロックコポリマーを含む層を相分離させるために用いられる上層膜であって、
(A)(a)マレイミド構造に由来する単位構造及びスチレン構造に由来する単位構造を含む共重合体を含む、上層膜。
[11] 基板上に形成したブロックコポリマーを含む層と、
その上に形成した(A)(a)マレイミド構造に由来する単位構造及びスチレン構造に由来する単位構造を含む共重合体を含む上層膜層からなる、積層体。
本発明に係る上層膜形成組成物は、基板上に形成したブロックコポリマーを含む層を相分離させるために用いられる上層膜形成組成物であって、
(A)(a)マレイミド構造に由来する単位構造及びスチレン構造に由来する単位構造を含む共重合体と、
(B)溶剤として、炭素原子数8乃至16のエーテル化合物
とを含む、上層膜形成組成物である。
本組成物は、ブロックコポリマー薄膜上に製膜し、加熱により上記ブロックコポリマーの配向を制御した後、除去する上層膜形成組成物として使用することができる。加熱するだけでは配向することができないブロックコポリマー層に対しても、本組成物により形成される上層膜を用いれば配向が可能となる。
[(a)マレイミド構造に由来する単位構造及びスチレン構造に由来する単位構造を含む共重合体]
(式(1)中、R1は、水素原子、炭素原子数1~10の直鎖、分岐若しくは環状アルキル基、又はハロゲン原子で置換されていてもよい炭素原子数6~10のアリール基を表す)で表される。
(式(2)中、R2~R4、R7及びR8はそれぞれ独立に、水素原子、炭素原子数1~5のアルコキシ基、又はハロゲン原子で置換されていてもよい炭素原子数1~10の直鎖、分岐若しくは環状アルキル基を表す。)で表される。R7及びR8は好ましくは水素原子である。
式(1)の構造単位:30乃至70モル%
式(2)の構造単位:20乃至50モル%
であることが望ましい。
さらに前記共重合体(A)は、式(1)及び式(2)に加え、(b)(メタ)アクリル基に由来する単位構造を含むことができる。
本発明において、(メタ)アクリル基とは、アクリル基とメタクリル基の両方を意味する。(メタ)アクリレート化合物とは、アクリレート化合物とメタクリレート化合物の両方を意味する。例えば(メタ)アクリル酸は、アクリル酸とメタクリル酸を意味する。
本発明で用いる共重合体(A)の製造方法は、式(4):
(式(4)中、R1は、水素原子、炭素原子数1~10の直鎖、分岐若しくは環状アルキル基、又はハロゲン原子で置換されていてもよい炭素原子数6~10のアリール基を表す)で表される化合物と、式(5):
で表される化合物を含むモノマー混合物を共重合させる工程を含む。R7及びR8は好ましくは水素原子である。
(式(6)中、R5及びR6はそれぞれ独立に、水素原子、炭素原子数1~5のアルコキシ基、又はハロゲン原子で置換されていてもよい炭素原子数1~10の直鎖、分岐若しくは環状アルキル基を表す。)
で表される化合物を配合することができる。
式(4)及び式(5)で表される化合物を、共重合体(A)全体に対し、
式(4)で表される化合物:30乃至70モル%
式(5)で表される化合物:20乃至50モル%
の割合で含むことが好ましい。
式(4)で表される化合物:30乃至70モル%
式(5)で表される化合物:20乃至50モル%
式(6)で表される化合物:0.1乃至40モル%
の割合で含むことが好ましい。
本発明の組成物に使用される溶剤は、炭素原子数8乃至16のエーテル化合物である。より具体的には、本願の組成物に溶剤として使用される炭素原子数8~16のエーテル化合物(以下において、「エーテル系溶剤」と称する場合がある)は以下の式(6)で表される。
式(6)中、A1とA2は各々独立して、置換されていてもよい炭素原子数1~15の直鎖、分岐又は環状飽和アルキル基を表す。
本発明に係る上層膜形成組成物は、更に界面活性剤、レオロジー調整剤などの添加剤を含むことができる。
本発明に係る上層膜形成組成物は、基板上に形成したブロックコポリマーを含む層を相分離させるために用いられる。
(1)ブロックコポリマー層を基板上に形成する工程、
(2)前記ブロックコポリマー層の上に、上記上層膜形成組成物を用いて上層膜を形成する工程、及び
(3)前記基板上に形成されたブロックコポリマー層を相分離させる工程、
を含む。
ブロックコポリマーは、化学的に異なりそして互いに共有結合している複数種類のポリマー(ブロック)が結合したものである。ブロックコポリマーに関しては、ナノメートルスケールパターンを形成する性能に基づいて多くの用途が提案されている。例えばブロックコポリマーの自己組織化パターンは、ナノリソグラフマスクや無機または有機構造のさらなる合成のための鋳型としての利用することができる。これは、それぞれのブロックの間でエッチング速度が異なることを利用することにより実現できる。
本願発明に用いられるブロックコポリマーは、有機モノマー(a)を単位構造として含む有機ポリマー鎖(A)と、有機モノマー(a)とは異なるモノマー(b)を単位構造として含み該有機ポリマー鎖(A)に結合するポリマー鎖(B)とを含む。
自己組織化膜形成組成物は固形分0.1~10質量%、又は0.1~5質量%、又は0.1~3質量%とすることができる。固形分は膜形成組成物中から溶剤を除いた残りの割合である。
固形分中に占めるブロックコポリマーの割合は、30~100質量%、又は50~100質量%、又は50~90質量%、又は50~80質量%にすることができる。
ブロックコポリマー中に存在するブロックの種類が2又は3以上とすることができる。そして、ブロックコポリマー中に存在するブロック数が2又は3以上とすることができる。
ポリマー鎖(B)を変えることにより、例えばモノマー(c)を単位構造として含む隣接するポリマー鎖(C)を用いることが可能である。
ブロックポリマーとしてはAB、ABAB、ABA、ABC等の組み合わせがある。
ブロックコポリマーを合成する方法の一つとして、重合過程が開始反応と成長反応のみからなり、成長末端を失活させる副反応を伴わないリビングラジカル重合、リビングカチオン重合によって得られる。成長末端は重合反応中に成長活性反応を保ち続けることができる。連鎖移動を生じなくすることで長さの揃ったポリマー(A)が得られる。このポリマー(A)の成長末端を利用して違うモノマー(b)を添加することにより、このモノマー(b)のもとで重合が進行しブロックコポリマー(AB)を形成することができる。
例えばブロックの種類がAとBの2種類である場合に、ポリマー鎖(A)とポリマー鎖(B)はモル比で1:9~9:1、好ましくは3:7~7:3とすることができる。
本願のブロックコポリマーの体積比率は例えば30:70~70:30である。
ホモポリマーA、又はBは、ラジカル重合可能な反応性基(ビニル基又はビニル基含有有機基)を少なくとも一つ有する重合性化合物である。
本願発明に用いられるブロックコポリマーの重量平均分子量Mwは1000~100000、又は5000~100000であることが好ましい。1000未満では下地基板への塗布性が悪い場合があり、また100000以上では溶媒への溶解性が悪い場合がある。
本願のブロックコポリマーの多分散度(Mw/Mn)は、好ましくは1.00~1.50であり、特に好ましくは1.00~1.20である。
ブロックコポリマーの具体例としては、例えば芳香族系ポリマー鎖とアクリル樹脂系ポリマー鎖との組み合わせが挙げられる。より具体的には、ポリ(4-ビニルピリジン)とポリメチルメタクリレートのような、ポリ(ビニルピリジン)誘導体ポリマーとポリアクリル酸エステル誘導体ポリマーとの組み合わせや、ポリアクリル酸誘導体ポリマーとポリスチレン誘導体ポリマーとの組み合わせ、あるいはポリ(ヒドロキシスチレン)誘導体ポリマーとポリアクリル酸エステル誘導体ポリマーとの組み合わせが挙げられる。
また、ポリジヘキシルシランなどのポリシラン類、ポリジメチルシロキサンなどのポリシロキサン類、ポリ(トリメチルシリルスチレン)、ポリ(ペンタメチルジシリルスチレン)などのシリル化ポリスチレン誘導体などの含ケイ素ポリマー鎖と非含ケイ素ポリマー鎖とを組み合わせた場合にも、例えばドライエッチング速度の差を大きくすることができるため好ましい。
特に、上記シリル化ポリスチレン誘導体は、置換基を4位に有するポリ(4-トリメチルシリルスチレン)、ポリ(4-ペンタメチルジシリルスチレン)が好ましい。
これらの中でも、シリル化ポリスチレン誘導体とポリスチレン誘導体ポリマーとの組み合わせ、異なる2種のポリスチレン誘導体ポリマーの組み合わせ又はシリル化ポリスチレン誘導体ポリマーとポリラクチドの組み合わせが好ましい。
これらの中でも、置換基を4位に有するシリル化ポリスチレン誘導体と置換基を4位に有するポリスチレン誘導体ポリマーとの組み合わせ、異なる2種の、置換基を4位に有するポリスチレン誘導体ポリマーの組み合わせ、又は置換基を4位に有するシリル化ポリスチレン誘導体ポリマーとポリラクチドの組み合わせが好ましい。
ブロックコポリマーのより好ましい具体例としては、ポリ(トリメチルシリルスチレン)とポリメトキシスチレンとの組み合わせ、ポリスチレンとポリ(tert-ブチルスチレン)との組み合わせ、ポリスチレンとポリ(トリメチルシリルスチレン)との組み合わせ、ポリ(トリメチルシリルスチレン)とポリ(D,L-ラクチド)との組み合わせが挙げられる。
ブロックコポリマーのより好ましい具体例としては、ポリ(4-トリメチルシリルスチレン)とポリ(4-メトキシスチレン)との組み合わせ、ポリスチレンとポリ(4-tert-ブチルスチレン)との組み合わせ、ポリスチレンとポリ(4-トリメチルシリルスチレン)との組み合わせ、ポリ(4-トリメチルシリルスチレン)とポリ(D,L-ラクチド)との組み合わせが挙げられる。
上層膜形成組成物については上記したとおりである。かくして準備された上層膜形成組成物は、ブロックコポリマー層の上にスピンコーティング等の慣用の手段により適用され、上層膜が形成される。上層膜の形成膜厚は特に限定されないが、一般的には3nm乃至100nmであり、好ましくは10~70nmであり、特に好ましくは20~60nmである。3nm以下であると、所望の均一なブロックコポリマーの相分離パターンが形成できない。100nm以上であると、エッチング加工時に時間がかかりすぎるため、好ましくない。本発明に係る上層膜形成組成物は、ブロックコポリマーを傷つけず、溶かさず、実質的に膨潤もさせない溶媒または溶媒混合物に溶解されているので、極めて有利である。
ブロックコポリマー層の相分離は、上層膜の存在下に、ブロックコポリマー材料の再配列をもたらす処理、例えば、超音波処理、溶媒処理、熱アニール等によって行うことができる。多くの用途において、単純に加熱またはいわゆる熱アニールによりブロックコポリマー層の相分離を達成することが望ましい。熱アニールは、大気中又は不活性ガス中において、常圧、減圧又は加圧条件下で行うことができる。
(1)ブロックコポリマー層を基板上に形成する工程、
(2)前記ブロックコポリマー層の上に、上記上層膜形成組成物を用いて上層膜を形成する工程、
(3)前記基板上に形成されたブロックコポリマー層を相分離させる工程、及び
(4)前記相分離したブロックコポリマー層をエッチングする工程、
を含む。
(1)ブロックコポリマー層を基板上に形成する工程、
(2)前記ブロックコポリマー層の上に、上記上層膜形成組成物を用いて上層膜を形成する工程、
(3)前記基板上に形成されたブロックコポリマー層を相分離させる工程、
(4)前記相分離したブロックコポリマー層をエッチングする工程、及び
(5)前記基板をエッチングする工程、
を含む。
測定装置:HLC-8020GPC〔商品名〕(東ソー株式会社製)
GPCカラム:TSKgel G2000HXL;2本、 G3000HXL:1本、G4000HXL;1本〔商品名〕(全て東ソー株式会社製)
カラム温度:40°C
溶媒:テトラヒドロフラン(THF)
流量:1.0ml/分
標準試料:ポリスチレン(東ソー株式会社製)
N-シクロヘキシルマレイミド3.20g、4-tert-ブチルスチレン2.00g、tert-ブチルメタクリレート0.76g、2,2’-アゾビスイソブチロニトリル0.05gをプロピレングリコールモノメチルエーテルアセテート24.0gに溶解させた後、この溶液を加熱し、140℃で約2時間撹拌した。この反応液をメタノールに滴下し、析出物を吸引ろ過にて回収した後、60℃で減圧乾燥してポリマー1を回収した。GPCによりポリスチレン換算で測定される重量平均分子量Mwは、28,100であった。
N-シクロヘキシルマレイミド3.14g、4-tert-ブチルスチレン2.24g、イソプロピルメタクリレート0.45g、2,2’-アゾビスイソブチロニトリル0.18gをプロピレングリコールモノメチルエーテルアセテート24.0gに溶解させた後、この溶液を加熱し、140℃で約2時間撹拌した。この反応液をメタノールに滴下し、析出物を吸引ろ過にて回収した後、60℃で減圧乾燥してポリマー2を回収した。GPCによりポリスチレン換算で測定される重量平均分子量Mwは、12,800であった。
N-シクロヘキシルマレイミド3.06g、4-tert-ブチルスチレン2.19g、シクロヘキシルメタクリレート0.58g、2,2’-アゾビスイソブチロニトリル0.18gをプロピレングリコールモノメチルエーテルアセテート24.0gに溶解させた後、この溶液を加熱し、140℃で約2時間撹拌した。この反応液をメタノールに滴下し、析出物を吸引ろ過にて回収した後、60℃で減圧乾燥してポリマー3を回収した。GPCによりポリスチレン換算で測定される重量平均分子量Mwは、11,700であった。
N-シクロヘキシルマレイミド3.01g、4-tert-ブチルスチレン2.42g、1,1,1,3,3,3-ヘキサフルオロイソプロピルメタクリレート0.40g、2,2’-アゾビスイソブチロニトリル0.18gをプロピレングリコールモノメチルエーテルアセテート24.0gに溶解させた後、この溶液を加熱し、140℃で約2時間撹拌した。この反応液をメタノールに滴下し、析出物を吸引ろ過にて回収した後、60℃で減圧乾燥してポリマー4を回収した。GPCによりポリスチレン換算で測定される重量平均分子量Mwは、14,300であった。
N-シクロヘキシルマレイミド2.13g、4-tert-ブチルスチレン2.64g、2-ビニルナフタレン0.23g、2,2’-アゾビスイソブチロニトリル1.00gをプロピレングリコールモノメチルエーテルアセテート24.0gに溶解させた後、この溶液を加熱し、140℃で約2時間撹拌した。この反応液をメタノールに滴下し、析出物を吸引ろ過にて回収した後、60℃で減圧乾燥してポリマー4を回収した。GPCによりポリスチレン換算で測定される重量平均分子量Mwは、6,000であった。
(上層膜組成物の調製)
合成例1で得た樹脂0.25gをジイソアミルエーテル9.75gに溶解させ、2.5質量%の溶液とした。その後、孔径0.2μmのポリエチレン製ミクロフィルターを用いてろ過し、自己組織化膜の上層膜形成組成物の溶液を調製した。
プロピレングリコールモノメチルエーテルアセテート24.5gにブロックコポリマーであるポリ(4-メトキシスチレン)/ポリ(4-トリメチルシリルスチレン)コポリマー(重量平均分子量Mw=30200、多分散度=1.12、体積比率50:50)0.5gを溶解させ、2質量%溶液とした後、孔径0.02μmのポリエチレン製ミクロフィルターを用いて濾過し、ブロックコポリマーからなる自己組織化膜形成組成物の溶液を調製した。
プロピレングリコールモノメチルエーテルアセテート19.9gにヒドロキシル基末端を持つポリ(スチレン-co-4-tert-ブチルスチレン)0.1gを溶解させ、0.5質量%溶液とした後、孔径0.02μmのポリエチレン製ミクロフィルターを用いて濾過し、ブロックコポリマーからなる自己組織化膜の下層膜形成組成物の溶液を調製した。
上記で得られた自己組織化膜の下層膜形成組成物をシリコンウェハー上に塗布し、ホットプレート上で240℃、1分間加熱した後、プロピレングリコールモノメチルエーテルアセテートに1分間浸漬させ、下層膜(A層)を得た。その上にブロックコポリマーからなる自己組織化膜形成組成物をスピンコーターにより塗布し、ホットプレート上で100℃にて1分間加熱し、膜厚40nmの自己組織化膜(B層)を形成した。その上に上層膜形成組成物をスピナーにより塗布し、続いてホットプレート上で210℃にて5分間加熱し、ブロックコポリマーのミクロ相分離構造を誘起させた。図1に各層の配置を示す。
ミクロ相分離構造を誘起させたシリコンウェハーはラム・リサーチ社製エッチング装置(Lam 2300 Versys Kiyo45)を用い、エッチングガスとしてO2ガスを使用して30秒間エッチングすることで、上層膜を除去するとともにポリメトキシスチレン領域を優先的にエッチングし、続いて電子顕微鏡(S-4800)で形状を観察した(図2)。
ポリマー1の代わりにポリマー2~5を用いた以外は、実施例1と同様の方法により、試料の調製およびブロックコポリマーのミクロ相分離構造の形成を実施した。
(上層膜組成物の調製)
極性溶剤を用いた上層膜に適用されている樹脂である、無水マレイン酸、3,5-ジtert-ブチルスチレン及びスチレンの共重合ポリマーのトリメチルアミン塩0.25gをジイソアミルエーテル4.85gに溶解させ、3質量%の溶液の調製を試みたが、上記共重合ポリマーが析出したため溶液が調製できなかった。
(上層膜組成物の調製)
無水マレイン酸、3,5-ジtert-ブチルスチレン及びスチレンの共重合ポリマー0.25gをジイソアミルエーテル4.85gに溶解させ、3質量%の溶液の調製を試みたが、上記共重合ポリマーが析出したため溶液が調製できなかった。
上記実施例1~5および比較例1、2にて調製した上層膜の溶解性およびブロックコポリマーの配列性について確認した。結果を表1及び図2に示す。
Claims (11)
- 基板上に形成したブロックコポリマーを含む層を相分離させるために用いられる上層膜形成組成物であって、
(A)(a)マレイミド構造に由来する単位構造及びスチレン構造に由来する単位構造を含む共重合体と、
(B)溶剤として、炭素原子数8乃至16のエーテル化合物
とを含む、上層膜形成組成物。 - 前記(A)共重合体が、さらに
(b)(メタ)アクリル基に由来する単位構造を含む、
請求項1~3の何れか1項に記載の組成物。 - (1)ブロックコポリマー層を基板上に形成する工程、
(2)前記ブロックコポリマー層の上に、請求項1~6の何れか1項に記載の組成物を用いて上層膜を形成する工程、及び
(3)前記基板上に形成されたブロックコポリマー層を相分離させる工程、
を含む、ブロックコポリマーの相分離パターン形成方法。 - (1)ブロックコポリマー層を基板上に形成する工程、
(2)前記ブロックコポリマー層の上に、請求項1~6の何れか1項に記載の組成物を用いて上層膜を形成する工程、
(3)前記基板上に形成されたブロックコポリマー層を相分離させる工程、及び
(4)前記相分離したブロックコポリマー層をエッチングする工程、
を含む、パターン製造方法。 - (1)ブロックコポリマー層を基板上に形成する工程、
(2)前記ブロックコポリマー層の上に、請求項1~6の何れか1項に記載の組成物を用いて上層膜を形成する工程、
(3)前記基板上に形成されたブロックコポリマー層を相分離させる工程、及び
(4)前記相分離したブロックコポリマー層をエッチングする工程、
(5)前記基板をエッチングする工程、
を含む、半導体装置の製造方法。 - 基板上に形成したブロックコポリマーを含む層を相分離させるために用いられる上層膜であって、
(A)(a)マレイミド構造に由来する単位構造及びスチレン構造に由来する単位構造を含む共重合体を含む、上層膜。 - 基板上に形成したブロックコポリマーを含む層と、
その上に形成した(A)(a)マレイミド構造に由来する単位構造及びスチレン構造に由来する単位構造を含む共重合体を含む上層膜層からなる、積層体。
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