WO2018051620A1 - 基板処理方法、基板処理装置 - Google Patents

基板処理方法、基板処理装置 Download PDF

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Publication number
WO2018051620A1
WO2018051620A1 PCT/JP2017/025229 JP2017025229W WO2018051620A1 WO 2018051620 A1 WO2018051620 A1 WO 2018051620A1 JP 2017025229 W JP2017025229 W JP 2017025229W WO 2018051620 A1 WO2018051620 A1 WO 2018051620A1
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Prior art keywords
substrate
speed
liquid
movable member
cover plate
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PCT/JP2017/025229
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English (en)
French (fr)
Japanese (ja)
Inventor
仁司 中井
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Priority to CN201780057069.XA priority Critical patent/CN109791883B/zh
Priority to KR1020197004931A priority patent/KR102150813B1/ko
Publication of WO2018051620A1 publication Critical patent/WO2018051620A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Definitions

  • the present invention relates to a substrate processing technique for executing a process of supplying a liquid to an upper surface of a substrate.
  • Patent Document 1 a dam member arranged along the peripheral edge of the lower surface of the substrate prevents the liquid from flowing from the upper surface to the lower surface of the substrate, thereby preventing the liquid from adhering to the lower surface of the substrate.
  • Patent Documents 2 and 3 a movable member (vertical moving member, protective disk) that is close to or away from the lower surface of the substrate is provided. And while a liquid is supplied to the upper surface of a board
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a technique that makes it possible to remove a liquid adhering to a movable member that is close to or away from the lower surface of a substrate by executing paddle processing.
  • the substrate processing method provides a movable member that is movable between a proximity position that is close to the bottom surface of the substrate and a separation position that is farther from the bottom surface of the substrate than the proximity position.
  • the first step of supplying the first liquid to the upper surface of the substrate that rotates at the first speed in a state of being positioned at A second step of supplying the first liquid to the upper surface of the substrate; and a third step of rotating the movable member at a third speed higher than the second speed in a state where the movable member is positioned at the separation position.
  • a substrate processing apparatus has a movable member provided on the lower surface side of the substrate, a first drive unit for rotating the substrate or the movable member, and a proximity position close to the lower surface of the substrate.
  • a second drive unit that drives the movable member between a separation position farther from the lower surface of the substrate than the proximity position, a liquid supply unit that supplies liquid to the upper surface of the substrate, a first drive unit, and a second drive unit
  • a control unit that controls the liquid supply unit, and the control unit supplies the liquid to the upper surface of the substrate that rotates at the first speed with the movable member positioned at the close position, and less than the first speed.
  • the second speed is less than the first speed and zero or more.
  • a liquid is supplied to the upper surface of the substrate while the rotational speed of the substrate is reduced (paddle processing). Therefore, a large amount of liquid can adhere to the movable member by executing the paddle process.
  • the movable member is rotated at a third speed higher than the second speed in a state where the movable member is positioned at the separation position.
  • the liquid can be shaken off and removed from the movable member.
  • the present invention it is possible to remove the liquid adhering to the movable member that is close to or away from the lower surface of the substrate by executing the paddle process.
  • a plurality of constituent elements of each aspect of the present invention described above are not essential, and some or all of the effects described in the present specification are to be solved to solve part or all of the above-described problems.
  • technical features included in one embodiment of the present invention described above A part or all of the technical features included in the above-described other aspects of the present invention may be combined to form an independent form of the present invention.
  • FIG. 2 is a partial cross-sectional view schematically showing an example of a cleaning processing unit provided in the substrate processing apparatus of FIG. 1.
  • FIG. 2 is a partial cross-sectional view schematically showing an example of a cleaning processing unit provided in the substrate processing apparatus of FIG. 1.
  • the block diagram which shows a part of electrical structure with which the substrate processing apparatus of FIG. 1 is provided.
  • the fragmentary sectional view which shows typically an example of the raising / lowering operation
  • the flowchart which shows an example of the substrate processing method which the substrate processing apparatus of FIG. 1 performs using the washing
  • FIG. 7 is a timing chart showing an example of an operation executed according to the substrate processing method of FIG. 6.
  • FIG. The side view which shows typically the mode of the substrate processing performed with respect to a board
  • the flowchart which shows the modification of the substrate processing method which the substrate processing apparatus of FIG. 1 performs using the washing
  • FIG. 1 is a plan view schematically showing an example of a substrate processing apparatus according to an embodiment of the present invention.
  • the substrate processing apparatus 1 in FIG. 1 is a single-wafer type apparatus that executes various types of substrate processing such as cleaning processing and heat treatment on a substrate W one by one.
  • the substrate W to be processed include a glass substrate for a liquid crystal display device, a semiconductor substrate, a glass substrate for a PDP, a glass substrate for a photomask, a substrate for a color filter, a substrate for a recording disk, a substrate for a solar cell, and an electronic paper
  • Examples include substrates for precision electronic devices such as substrates, rectangular glass substrates, flexible substrates for film liquid crystals, and organic EL substrates.
  • the substrate W has a circular shape with a predetermined diameter of 100 mm to 400 mm, and has a concavo-convex surface Wf (FIG. 2) on which a fine pattern Wp (FIG. 8) is formed and a flat back surface Wb. (The surface on the opposite side of the surface Wf).
  • the configuration of the substrate including the shape and dimensions is not limited to this example.
  • the substrate processing apparatus 1 includes a plurality of load ports 2 that accommodate a substrate W, a plurality of cleaning processing units 3 that perform a cleaning process on the substrate W, and a plurality of heat treatment units 4 that perform a heat treatment on the substrate W.
  • the substrate processing apparatus 1 includes an indexer robot IR and a center robot CR in order to transport the substrate W within the apparatus. Among these, the indexer robot IR transports the substrate W on the path between the load port 2 and the center robot CR, and the center robot CR transmits the substrate on the path between the indexer robot IR and each processing unit 3, 4. Transport W.
  • the substrate processing apparatus 1 includes a controller 9 configured by a computer, and the substrate processing described below is performed on the substrate W by the controller 9 controlling each part of the apparatus according to a predetermined program.
  • the load port 2 holds a carrier C that accommodates a plurality of substrates W stacked in the vertical direction.
  • each substrate W is accommodated with its front surface Wf facing upward (that is, its back surface Wb facing downward).
  • the indexer robot IR takes out the unprocessed substrate W from the carrier C of the load port 2
  • the indexer robot IR delivers the substrate W to the center robot CR.
  • the center robot CR passes the substrate W received from the indexer robot IR to the cleaning processing unit 3. Carry in.
  • the cleaning unit 3 cleans the loaded substrate W (cleaning process), and then covers the surface Wf of the substrate W including the space between the patterns Wp with a liquid film of the filler solution (coating process).
  • the filler solution is a solution containing a filler that is a solute.
  • the cleaning processing unit 3 is a substrate processing unit that executes not only cleaning processing but also other substrate processing such as coating processing. The configuration and operation of the cleaning processing unit 3 will be described in detail later.
  • the center robot CR When each substrate processing in the cleaning processing unit 3 is completed, the center robot CR unloads the substrate W from the cleaning processing unit 3 and loads the substrate W into the heat treatment unit 4.
  • the heat treatment unit 4 has a hot plate, and heats the substrate W carried by the center robot CR by the hot plate (heat treatment). By this heat treatment, the solvent evaporates from the liquid film of the filler solution covering the surface Wf of the substrate W, and the solute of the filler solution, that is, the filler is solidified between the adjacent patterns Wp.
  • the heating method of the substrate W is not limited to this, and the substrate W may be heated by, for example, irradiating the substrate W with infrared rays or applying warm air to the substrate W.
  • the center robot CR delivers the substrate W unloaded from the heat treatment unit 4 to the indexer robot IR, and the indexer robot IR accommodates the received substrate W in the carrier C of the load port 2.
  • the substrate W that has been subjected to each substrate processing in the substrate processing apparatus 1 is transported to an external filler removing device.
  • This filler removing apparatus removes the filler from the surface Wf of the substrate W including the space between the patterns Wp by dry etching.
  • the method for removing the filler is not limited to this.
  • the filler may be removed by sublimation of the filler as disclosed in JP2013-258272A or plasma treatment as disclosed in JP2011-124313A. Also good.
  • FIG. 2 and 3 are partial cross-sectional views schematically showing an example of a cleaning processing unit provided in the substrate processing apparatus of FIG. 1, and FIG. 4 is a block diagram showing a part of an electrical configuration provided in the substrate processing apparatus of FIG. FIG. 2 and 3 differ in the height of a cover plate 35 and a nozzle unit 36 which will be described later. Moreover, in FIG. 2, FIG. 3, and the following figures, the vertical direction Z is shown suitably.
  • the cleaning processing unit 3 includes a spin chuck 31 that holds the substrate W carried by the center robot CR, and a suction unit 32 that supplies a negative pressure to the spin chuck 31.
  • the spin chuck 31 has a shape in which a cylindrical shaft protrudes downward from the central portion of the lower surface of the disk, and is substantially rotationally symmetric with respect to a center line A parallel to the vertical direction Z.
  • a plurality of suction holes are opened on the upper surface of the spin chuck 31, and the substrate W is placed horizontally on the upper surface of the spin chuck 31.
  • the spin chuck 31 contacts the center portion of the back surface Wb of the substrate W from below with the front surface Wf of the substrate W facing upward.
  • the controller 9 outputs a suction command to the suction unit 32
  • the suction unit 32 supplies a negative pressure to the suction hole of the spin chuck 31, and the substrate W is attracted and held by the spin chuck 31.
  • the cleaning processing unit 3 includes a rotation shaft 33 that holds the spin chuck 31 and a rotation drive unit 34 that is configured by, for example, a motor and rotates the rotation shaft 33.
  • the rotating shaft 33 has a shape in which a cylindrical portion 332 having a smaller diameter than the cylindrical portion 331 protrudes upward from the central portion of the upper surface of the cylindrical portion 331, and the cylindrical portions 331 and 332 are substantially rotationally symmetric with respect to the center line A.
  • the rotating shaft 33 has an engaging protrusion 333 that protrudes upward on the upper surface of the cylindrical portion 331 and on the side of the cylindrical portion 332.
  • the rotation drive unit 34 applies a rotation drive force (torque) to the rotation shaft 33, and the rotation shaft 33 is centered on the center line A integrally with the spin chuck 31. Rotate to. As a result, the substrate W held on the spin chuck 31 also rotates about the center line A.
  • the cleaning processing unit 3 has a cover plate 35 positioned below the substrate W held by the spin chuck 31.
  • the cover plate 35 has a substantially circular outer shape centered on the center line A.
  • a circular center hole 351 is opened at the center of the cover plate 35, and at the side of the center hole 351 of the cover plate 35.
  • the engagement hole 352 is opened, and the peripheral hole 353 is opened at the peripheral edge of the cover plate 35.
  • the cylindrical portion 332 of the rotating shaft 33 is inserted inside the center hole 351 of the cover plate 35, and the cover plate 35 faces the back surface Wb of the substrate W from the lower side outside the cylindrical portion 332 of the rotating shaft 33.
  • the cover plate 35 can be moved up and down in the vertical direction Z, and a proximity position Pc (FIG. 2) that is close to the back surface Wb of the substrate W, and a separation position Pd that is farther downward from the back surface Wb of the substrate W than the proximity position Pc ( 3) and can be selectively located.
  • a proximity position Pc FOG. 2
  • a separation position Pd that is farther downward from the back surface Wb of the substrate W than the proximity position Pc ( 3) and can be selectively located.
  • the engagement protrusion 333 of the rotary shaft 33 engages with the engagement hole 352 of the cover plate 35.
  • the cover plate 35 can be rotated with the rotation of the rotation shaft 33 by engaging with the rotation shaft 33 in this way.
  • the cover plate 35 in the proximity state in which the cover plate 35 is located at the proximity position Pc, the cover plate 35 is close to the back surface Wb of the substrate W with a clearance of, for example, about 1 mm to 10 mm, and at least the peripheral portion of the back surface Wb of the substrate W is downward. Cover from. Further, in this proximity state, the engagement hole 352 of the cover plate 35 is detached from the engagement protrusion 333 of the rotary shaft 33, and the cover plate 35 is stationary regardless of the rotation of the rotary shaft 33.
  • the cleaning processing unit 3 includes a nozzle unit 36 that can be freely engaged and disengaged from below in the peripheral hole 353 of the cover plate 35, and a lifting drive unit 37 that lifts and lowers the nozzle unit 36. And the raising / lowering drive part 37 raises / lowers the cover plate 35 with the raising / lowering of the nozzle unit 36.
  • FIG. 5 is a partial cross-sectional view schematically showing an example of the raising / lowering operation of the nozzle unit and the cover plate.
  • Each column of “nozzle unit lowered position”, “nozzle unit intermediate position” and “nozzle unit raised position” in FIG. 5 indicates a state where the nozzle unit 36 is located at the lowered position, the middle position and the raised position, respectively. Subsequently, FIG. 5 is added to FIGS. 2 to 4 to describe the cleaning unit 3.
  • the nozzle unit 36 includes a base portion 361 and two lower nozzles Na and Nb attached to the upper surface of the base portion 361.
  • the base portion 361 has a protrusion 362 at the bottom thereof that protrudes sideways.
  • the two lower nozzles Na and Nb are arranged in the radial direction of the substrate W held by the spin chuck 31, and the lower nozzle Na on the peripheral edge side in the radial direction is inclined upward and inclined outward as it goes upward.
  • the processing liquid is discharged, and the lower nozzle Nb on the center side in the radial direction discharges the processing liquid in parallel to the vertical direction Z.
  • the raising / lowering drive part 37 is comprised, for example with an actuator, and raises / lowers the nozzle unit 36 between a lowered position (FIG. 3) and a raised position (FIG. 2) higher than a lowered position according to the command from the controller 9.
  • a lowered position FOG. 3
  • a raised position FOG. 2
  • the nozzle unit 36 in the lowering position is lower than the cover plate 35 positioned in the separation position Pd.
  • the upper surface of the base portion 361 and the upper surface of the cover plate 35 are aligned, and the lower nozzles Na and Nb are formed on the substrate W held by the spin chuck 31. Proximity to the back surface Wb.
  • the lower nozzle Na can discharge the processing liquid to the peripheral edge of the back surface Wb, and the lower nozzle Nb can discharge the processing liquid to the back surface Wb inside the lower nozzle Na.
  • each operation is executed in the reverse order to the above. That is, the cover plate 35 is lowered from the proximity position Pc to the separation position Pd as the nozzle unit 36 is lowered. When the cover plate 35 reaches the separation position Pd, the cover plate 35 engages with the rotating shaft 33 and stops descending. As the nozzle unit 36 further descends, it disengages downward from the peripheral hole 353 of the cover plate 35 and reaches the lowered position.
  • the cleaning processing unit 3 includes a cup 38 that surrounds the substrate W and the cover plate 35 held by the spin chuck 31 from the side and from below. Therefore, the processing liquid scattered or dropped from the substrate W or the cover plate 35 is collected in the cup 38.
  • the cup 38 is moved up and down between a raised position in FIG. 3 and a lowered position below the raised position by a lifting mechanism (not shown). Then, the substrate W is attached to and detached from the spin chuck 31 with the cup 38 positioned at the lowered position, and various substrate processes are performed on the substrate W mounted on the spin chuck 31 with the cup 38 positioned at the raised position. Is executed.
  • the cleaning processing unit 3 includes an inert gas supply source Sg for supplying an inert gas such as nitrogen gas.
  • the gas supply port 334 opened on the upper part of the cylindrical part 332 of the rotating shaft 33 is connected to the inert gas supply source Sg via the valve V1. Therefore, when the controller 9 opens the valve V ⁇ b> 1, the inert gas is supplied from the inert gas supply source Sg between the back surface Wb of the substrate W held by the spin chuck 31 and the upper surface of the cover plate 35. As a result, between the back surface Wb of the substrate W and the cover plate 35, the inert gas flows in the direction from the center of the substrate W toward the periphery. On the other hand, when the controller 9 closes the valve V1, the supply of gas from the inert gas supply source Sg is stopped.
  • the cleaning processing unit 3 includes three upper nozzles Nc, Nd, and Ne that discharge the processing liquid onto the surface Wf of the substrate W held by the spin chuck 31.
  • the cleaning processing unit 3 includes the upper nozzle Nc between a facing position that faces the center of the surface Wf of the substrate W held by the spin chuck 31 and a retreat position that retreats horizontally from the surface Wf of the substrate W.
  • the nozzle drive part 39 which moves is provided.
  • the cleaning processing unit 3 includes the same nozzle drive unit 39 for each of the upper nozzles Nd and Ne. Then, in response to a command from the controller 9, each nozzle drive unit 39 moves the upper nozzles Nc, Nd, and Ne, respectively.
  • the cleaning processing unit 3 includes the lower nozzles Na and Nb for discharging the processing liquid to the back surface Wb of the substrate W and the upper nozzles Nc, Nd and Ne for supplying the processing liquid to the front surface Wf of the substrate W. It has been.
  • the cleaning processing unit 3 includes various supply sources Sc, Sr, Ss, and Sf that supply the processing liquid to the nozzles Na to Ne.
  • the chemical solution supply source Sc supplies, for example, a cleaning solution containing dilute hydrofluoric acid (DHF) or aqueous ammonia as a chemical solution.
  • the chemical solution supply source Sc is connected to the upper nozzle Nc via valves V2 and V3 connected in series. Therefore, when the controller 9 opens the valve V2 and the valve V3, the chemical liquid supplied from the chemical liquid supply source Sc is discharged from the upper nozzle Nc, and when the controller 9 closes either the valve V2 or the valve V3, the chemical liquid from the upper nozzle Nc. Discharge stops.
  • the rinse liquid supply source Sr supplies pure water such as DIW (De-ionized Water), carbonated water, ozone water or hydrogen water as a rinse liquid.
  • the rinse liquid supply source Sr is connected to the upper nozzle Nc via a valve V4 and a valve V3 connected in series. Therefore, when the controller 9 opens the valve V4 and the valve V3, the rinse liquid supplied from the rinse liquid supply source Sr is discharged from the upper nozzle Nc, and when the controller 9 closes either the valve V4 or the valve V3, the upper nozzle Nc Discharge of the rinsing liquid stops.
  • the rinse liquid supply source Sr is connected to the lower nozzle Nb (FIG. 5) via the valve V5.
  • the controller 9 opens the valve V5, the rinse liquid supplied from the rinse liquid supply source Sr is discharged from the lower nozzle Nb, and when the controller 9 closes the valve V5, the discharge of the rinse liquid from the lower nozzle Nb is stopped. To do.
  • the solvent supply source Ss supplies, for example, IPA (Isopropyl® Alcohol) as a solvent.
  • the solvent supply source Ss is connected to the lower nozzle Na through a valve V6. Therefore, when the controller 9 opens the valve V6, the solvent supplied from the solvent supply source Ss is discharged from the lower nozzle Na, and when the controller 9 closes the valve V6, the discharge of the solvent from the lower nozzle Na is stopped.
  • the solvent supply source Ss is connected to the upper nozzle Nd via the valve V7. Therefore, when the controller 9 opens the valve V7, the solvent supplied from the solvent supply source Ss is discharged from the upper nozzle Nd, and when the controller 9 closes the valve V7, the discharge of the solvent from the upper nozzle Nd stops.
  • the filler solution supply source Sf supplies a solution obtained by dissolving a filler, which is a polymer such as an acrylic resin, in water as a filler solution.
  • This filler solution supply source Sf is connected to the upper nozzle Ne via a valve V8. Therefore, when the controller 9 opens the valve V8, the filler solution supplied from the filler solution supply source Sf is discharged from the upper nozzle Ne, and when the controller 9 closes the valve V8, the filler solution is discharged from the upper nozzle Ne. Stop.
  • FIG. 6 is a flowchart showing an example of a substrate processing method executed by the substrate processing apparatus of FIG. 1 using the cleaning processing unit of FIGS.
  • FIG. 7 is a timing chart showing an example of operations executed in accordance with the substrate processing method of FIG.
  • FIG. 8 is a side view schematically showing the state of the substrate processing performed on the substrate by the substrate processing method of FIG. This flowchart is executed under the control of the controller 9. Note that nitrogen gas is continuously supplied from the gas supply port 334 between the substrate W and the cover plate 35 throughout the execution period of the flowchart of FIG. 6.
  • step S101 When the unprocessed substrate W is carried onto the upper surface of the spin chuck 31 of the cleaning processing unit 3 by the center robot CR (step S101), the spin chuck 31 attracts and holds the substrate W (step S102). Then, during the execution of steps S101 and S102, the cover plate 35 located at the separation position Pd rises to the proximity position Pc (step S103).
  • step S104 the spin chuck 31 starts rotating, and the rotation speed of the substrate W is accelerated from zero to the speed v1. Subsequently, with the cover plate 35 positioned at the proximity position Pc, the cleaning process including the chemical process in step S105 and the rinse process in step S106 is started.
  • the upper nozzle Nc facing the center of the substrate W moves the DHF (chemical solution) to the surface Wf of the substrate W while the substrate W rotates at a constant speed v1 (for example, 800 rpm).
  • Supply is started (time t1).
  • the upper nozzle Nc supplies DHF to the surface Wf of the substrate W at a supply speed F1.
  • the supply rate (mL / min) is the supply amount (mL) per unit time (min).
  • DHF continuously supplied to the center of the surface Wf of the substrate W receives the centrifugal force generated by the rotation of the substrate W and spreads to the periphery of the surface Wf of the substrate W. Spatter from the periphery.
  • the upper nozzle Nc stops supplying DHF and the rinsing processing (step S106) starts.
  • the rotation speed of the substrate W is kept constant at the speed v1 throughout the period from the time t2 to the time t3, and then decelerated from the speed v1 to the speed v2 over the period from the time t3 to the time t4.
  • the speed v2 is a speed less than the speed v1 and equal to or greater than zero.
  • the speed v2 is zero in this example.
  • the upper nozzle Nc facing the center of the substrate W continuously supplies DIW (rinse liquid) to the surface Wf of the substrate W through a period from time t2 to time t4. At this time, the upper nozzle Nc supplies DIW to the surface Wf of the substrate W at a supply speed F2 that is faster than the supply speed F1.
  • DIW supplied to the center of the surface Wf of the substrate W receives a centrifugal force and immediately receives the peripheral edge of the surface Wf of the substrate W. It spreads to and spreads from this periphery. Further, DHF supplied to the surface Wf of the substrate W in the previous chemical liquid processing is replaced with DIW.
  • the rotational speed of the substrate W decreases over the period from time t3 to time t4
  • the thickness of the DIW liquid film formed on the surface Wf of the substrate W increases.
  • the surface Wf of the substrate W is covered with a DIW liquid film after being cleaned with DHF.
  • the back surface Wb of the substrate W is covered with the cover plate 35 located at the proximity position Pc, and adhesion of DHF and DIW to the back surface Wb of the substrate W is suppressed.
  • the nitrogen gas flowing from the rotation center of the substrate W toward the periphery of the substrate W An air flow is generated on the lower surface side of the substrate W. In this way, it is possible to more reliably suppress the wraparound of DHF and DIW from the front surface Wf of the substrate W to the back surface Wb by the nitrogen gas flow.
  • the paddle process starts. That is, at the time t4, the rotation speed of the substrate W becomes the speed v2, that is, zero. (Step S107).
  • the controller 9 controls the rotational position at which the spin chuck 31 stops based on the output of the encoder of the motor constituting the rotation drive unit 34. As a result, the spin chuck 31 stops at a rotational position where the engagement protrusion 333 of the spin chuck 31 faces the engagement hole 352 of the cover plate 35 in the vertical direction Z.
  • the cover plate 35 is lowered from the proximity position Pc to the separation position Pd and engaged with the spin chuck 31 (step S108).
  • the upper nozzle Nc continues to supply DIW to the surface Wf of the substrate W even after the rinsing process is completed, and the paddle process is executed.
  • the DIW supply speed in this paddle process is the same speed F2 as that in the rinse process.
  • the upper nozzle Nc stops supplying DIW (step S109). That is, in the paddle process, DIW is continuously supplied to the surface Wf of the substrate W whose rotational speed is decelerated from the speed v1 throughout the period from time t4 to time t5.
  • step S110 the spin chuck 31 starts rotating (step S110), and the coating process including the IPA replacement in step S111 and the polymer coating in step S112 is started.
  • the cover plate 35 is engaged with the spin chuck 31, so that the cover plate 35 also rotates as the substrate W rotates.
  • step S111 after the rotation speed of the substrate W is accelerated from zero (speed v2) to the speed v3, it is maintained at the speed v3 until time t6.
  • the speed v3 is 300 rpm.
  • the speed v3 is a speed higher than the speed v2, and in the example here, the speed v3 is less than the speed v1.
  • the upper nozzle Nd facing the center of the substrate W continuously supplies IPA (solvent) to the surface Wf of the substrate W at the supply speed F3.
  • the supply speed F3 is slower than the supply speed F1 and the supply speed F2.
  • the supply speed F3 is less than half of the supply speed F1 and the supply speed F2.
  • the IPA continuously supplied to the center of the surface Wf of the substrate W receives the centrifugal force and spreads to the periphery of the surface Wf of the substrate W, and removes DIW from the surface Wf of the substrate W.
  • DIW that covers the surface Wf of the substrate W is replaced with the IPA 51, and a plurality of patterns Wp formed on the surface Wf of the substrate W are between. Filled with IPA51.
  • the upper nozzle Nd stops supplying the IPA, and the filling material application (step S112) starts.
  • the rotation speed of the substrate W is rapidly accelerated from the speed v3 to the speed v4, and then maintained at the speed v4 until the time t7.
  • the speed v4 is a speed higher than the speed v3.
  • the speed v4 is equal to or higher than the speed v1 (for example, 1500 rpm to 2000 rpm).
  • the upper nozzle Ne facing the center of the substrate W supplies the filler solution to the surface Wf of the substrate W at the supply speed F4.
  • the supply speed F4 is slower than the supply speed F1 and the supply speed F2.
  • the supply speed F4 is less than half of the supply speed F1 and the supply speed F2.
  • the supply of the filler solution is executed by the upper nozzle Ne discharging the filler solution one shot at a time.
  • the filler solution supplied to the center of the surface Wf of the substrate W receives the centrifugal force and spreads on the IPA liquid film.
  • the liquid film of the filler solution 52 is laminated on the liquid film of the IPA 51 on the surface Wf of the substrate W as shown in the column “After applying the filler” in FIG.
  • the cover plate 35 is rotated at a high speed (speeds v3 and v4) in parallel with the execution of the coating process.
  • the high speed rotation of the cover plate 35 is executed in order to remove DIW dropped from the substrate W onto the cover plate 35 during the paddle process from the cover plate 35 by centrifugal force.
  • step S113 to S115 the filler subsidence process
  • the controller 9 controls the rotational position at which the spin chuck 31 stops based on the output of the encoder of the motor constituting the rotation drive unit 34.
  • the spin chuck 31 stops at a rotational position where the peripheral hole 353 of the cover plate 35 faces the nozzle unit 36 in the vertical direction Z.
  • step S115 the process waits for a predetermined time to elapse after the rotation of the substrate W and the cover plate 35 is stopped.
  • the filler solution 52 stacked on the IPA 51 sinks while the IPA 51 rises.
  • the pattern Wp formed on the surface Wf of the substrate W is covered with the liquid film of the filler solution 52 as shown in the column “After the filler sinking process” in FIG. Is filled with a filler solution 52.
  • the substrate W starts to rotate (step S116), and the rotation speed of the substrate W is accelerated from zero to the speed v5. Then, the substrate W is rotated at a constant speed v5 for a predetermined time until time t9, whereby spin-off for removing IPA and excess filler solution from the surface Wf of the substrate W is executed.
  • the space between the adjacent patterns Wp is filled with the liquid film of the filler solution 52 having a thickness similar to the height of the pattern Wp.
  • the rotation speed of the substrate W is reduced from the speed v5 to the speed v6 and then maintained at the speed v6.
  • the lower nozzle Na and the lower nozzle Nb discharge the processing liquid onto the back surface Wb of the substrate W rotating at a constant speed at a speed v6 (edge rinse).
  • the lower nozzle Na discharges IPA (solvent) toward the periphery of the back surface Wb of the substrate W.
  • the lower nozzle Nb discharges DIW (rinsing liquid) in the vicinity of the periphery of the back surface Wb of the substrate W.
  • DIW cleaning liquid
  • the DIW ejected in this manner flushes particles and the like from the back surface Wb of the substrate W while keeping the back surface Wb of the substrate W toward the periphery by centrifugal force.
  • step S119 control similar to the control of the stop position of the spin chuck 31 described in step S107 is executed, and the cover plate 35 lowered in step S120 is engaged with the spin chuck 31. Then, the spin chuck 31 releases the adsorption of the substrate W, and the center robot CR carries the substrate W out of the cleaning processing unit 3 (step S121).
  • the rotational speed of the substrate W is reduced to a speed v2 that is less than the speed v1 and equal to or higher than zero. Then, DIW is supplied to the surface Wf of the substrate W (paddle processing). Therefore, a large amount of DIW can adhere to the cover plate 35 by performing the paddle process.
  • the cover plate 35 is rotated at a speed v3 that is faster than the speed v2 in a state where the cover plate 35 is positioned at the separation position Pd.
  • the DIW can be shaken off from the cover plate 35 by rotating the cover plate 35 at a high speed while ensuring a wide gap between the back surface Wb of the substrate W and the cover plate 35. In this way, DIW adhering to the cover plate 35 during the paddle process can be efficiently removed.
  • the cover plate 35 is moved from the proximity position Pc to the separation position Pd in parallel with the paddle processing. Therefore, it is possible to quickly shift from the completion of the paddle process to the rotation of the cover plate 35, which is preferable.
  • IPA is applied to the surface Wf of the substrate W while rotating the substrate W at the speed v3 as the cover plate 35 rotates. Therefore, in parallel with the coating process of applying IPA to the surface Wf of the substrate W, the process of shaking off the DIW from the cover plate 35 can be executed efficiently.
  • the speed F3 for supplying IPA in the coating process is slower than the speed F2 for supplying DIW in the rinsing process.
  • the speed F3 for supplying IPA in the coating process is less than half of the speed F2 for supplying DIW in the rinsing process. This can more reliably suppress the IPA from adhering to the back surface Wb of the substrate W.
  • step S112 since the DIW adhering to the cover plate 35 is removed before the filler application (step S112) for supplying the filler solution to the substrate Wf of the substrate W is performed, there are the following advantages. That is, when the humidity rises due to a large amount of DIW adhering to the cover plate 35 by executing the paddle process, the filler in the filler solution supplied to the surface Wf of the substrate W in the subsequent filler application (step S112). May deteriorate, which may hinder the formation of a liquid film of the filler solution or the filling of the pattern Wp with the filler.
  • a pattern Wp is formed on the surface Wf of the substrate W.
  • the DIW supplied to the surface Wf of the substrate W rotating at a high speed (speed v1) spreads between the adjacent patterns Wp as it spreads over the entire surface Wf of the substrate W.
  • speed v1 a high speed
  • the DIW between the patterns Wp evaporates, the pattern Wp may collapse due to the surface tension of the DIW. Therefore, it is necessary to prevent the surface Wf of the substrate W from being dried even after the DIW is spread over the surface Wf of the substrate W.
  • the rotation speed of the substrate W is reduced in order to keep the surface Wf of the substrate W wet.
  • paddle processing for supplying DIW to the surface Wf of the substrate W is executed.
  • a large amount of DIW may adhere to the cover plate 35 by performing the paddle process.
  • the cover plate 35 is rotated at a high speed (speeds v3 and v4) while ensuring a wide space between the back surface Wb of the substrate W and the cover plate 35, so that the cover plate is subjected to the paddle process.
  • the DIW adhering to 35 can be removed, which is preferable.
  • the substrate processing method shown in the flowchart of FIG. 6 corresponds to an example of the “substrate processing method” of the present invention
  • step S106 corresponds to an example of the “first process” of the present invention
  • steps S107 to S109 correspond to an example of the “second process” of the present invention
  • step S111 corresponds to an example of the “third process” of the present invention
  • step S112 corresponds to an example of the “fourth process” of the present invention.
  • the substrate W corresponds to an example of the “substrate” of the present invention
  • the front surface Wf corresponds to an example of the “upper surface” of the present invention
  • the back surface Wb corresponds to an example of the “lower surface” of the present invention
  • the pattern Wp Corresponds to an example of the “pattern” of the present invention
  • the cover plate 35 corresponds to an example of the “movable member” of the present invention
  • the proximity position Pc corresponds to an example of the “proximity position” of the present invention
  • the separation position Pd is an example of the “proximity position” of the present invention
  • the degree v1 corresponds to an example of the “first speed” of the present invention
  • the speed v2 corresponds to an example of the “second speed” of the present invention
  • the speed v3 corresponds to an example of the “third speed” of the present invention
  • Speed v4 corresponds to an example of “fourth speed” of the present invention
  • DIW corresponds to an example of “first liquid” of the present invention
  • IPA corresponds to an example of “second liquid” of the present invention.
  • the filler solution corresponds to an example of the “second liquid” of the present invention
  • the substrate processing apparatus 1 corresponds to an example of the “substrate processing apparatus” of the present invention
  • the rotation driving unit 34 corresponds to the “first driving unit” of the present invention.
  • the up-and-down drive unit 37 corresponds to an example of the “second drive unit” of the present invention
  • the upper nozzle Nc corresponds to an example of the “liquid supply unit” of the present invention
  • the controller 9 corresponds to the present invention. This corresponds to an example of the “control unit”.
  • the present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention.
  • the cover plate 35 at the separation position Pd is rotated with the rotation of the substrate W.
  • the cleaning processing unit 3 may be configured so that each of the substrate W and the cover plate 35 is provided with a rotation drive unit and can be rotated independently. In this case, the substrate processing method shown in FIG. 9 can be executed.
  • FIG. 9 is a flowchart showing a modification of the substrate processing method executed by the substrate processing apparatus of FIG. 1 using the cleaning processing unit of FIGS. Below, it demonstrates centering around difference with the example of FIG. 6, and a common code
  • the cover plate 35 starts rotating while the substrate W is stationary (step S131). Then, the cover plate 35 rotates at a constant speed v3 for a predetermined period, whereby DIW attached to the cover plate 35 during the paddle process is removed from the cover plate 35. Subsequently, when the rotation of the cover plate 35 stops (step S132), the cover plate 35 rises from the separation position Pd to the proximity position Pc (step S133).
  • step S134 a coating process including IPA replacement (step S112) and filler coating (step S113) is executed in the same manner as described above.
  • step S112 IPA replacement
  • step S113 filler coating
  • the cover plate 35 is rotated at the speed v3 faster than the speed v2 in a state where the cover plate 35 is positioned at the separation position Pd (step S131). That is, the DIW can be shaken off from the cover plate 35 by rotating the cover plate 35 at a high speed while ensuring a wide gap between the back surface Wb of the substrate W and the cover plate 35. In this way, DIW attached to the cover plate 35 during the paddle process can be removed.
  • the timing for raising and lowering the cover plate 35 may be changed as appropriate. That is, in the example of FIG. 6, the cover plate 35 is lowered (step S108) in parallel with the paddle process. However, the cover plate 35 may be lowered after the paddle processing is completed. Further, the cover plate 35 is lifted (step S114) in parallel with the filling material settlement process. However, the cover plate 35 may be raised after the filling material settlement process is completed.
  • the processing liquid when the processing liquid is supplied from the upper nozzles Nc to Ne to the substrate W, the upper nozzles Nc to Ne are stopped at positions facing the center of the substrate W.
  • the processing liquid may be supplied to the substrate W while moving the upper nozzles Nc to Ne in the radial direction of the substrate W.
  • the pattern for changing the rotation speed of the substrate W is not limited to the pattern shown in the timing chart of FIG. Therefore, the value of the rotation speed of the substrate, the change timing, etc. may be changed as appropriate.
  • the specific configuration for engaging the cover plate 35 and the rotary shaft 33 is not limited to the above. Therefore, for example, a protrusion may be provided on the cover plate 35 and an engagement hole may be provided on the spin chuck 31 so that the cover plate 35 and the spin chuck 31 are engaged with each other.
  • the upper surface of the base portion 361 of the nozzle unit 36 and the upper surface of the cover plate 35 are configured to be flush with each other when the substrate W is located at the proximity position Pc.
  • the upper surface of the base portion 361 may be lower or higher than the upper surface of the cover plate 35.
  • processing liquid used in various substrate processing executed in steps S105, S106, S111, S112, etc. may be changed as appropriate.
  • the process of removing the solidified filler from the substrate W has been executed by an external filler removing apparatus different from the substrate processing apparatus 1.
  • the substrate processing apparatus 1 may have a filler removing function.
  • the filler may be removed by sublimation.
  • the paddle treatment suppresses adhesion of particles to the surface of the substrate as disclosed in Japanese Patent Application Laid-Open No. 2015-076558, or watermarks and spots on the surface of the substrate as described in Japanese Patent Application Laid-Open No. 2009-212408. It can also be executed for the purpose of suppressing the problem. Therefore, when the processing liquid adheres to the movable member such as the cover plate 35 by performing the paddle process, the liquid adhered to the movable member is rotated by rotating the movable member after the paddle process is performed, as in the above embodiment. Can be removed.
  • the present invention can also be applied to an apparatus having a function different from that of the substrate processing apparatus 1 described above.
  • the present invention can function effectively for an apparatus in which processing liquid may adhere to the movable member by executing paddle processing.
  • the substrate processing method in the second step, may be configured to move the movable member from the proximity position to the separation position. Such a configuration is suitable because it can quickly shift from the paddle processing in the second step to the rotation of the movable member in the third step.
  • the substrate processing method may be configured to supply the second liquid to the upper surface of the substrate while rotating the substrate at a third speed together with the movable member.
  • the process of shaking off the liquid from the movable member can be efficiently executed.
  • the substrate processing is performed so that the amount per unit time for supplying the second liquid to the upper surface of the substrate in the third step is smaller than the amount per unit time for supplying the first liquid to the upper surface of the substrate in the first step.
  • a method may be configured. In this way, by suppressing the supply amount of the second liquid per unit time, even when the movable member is separated from the lower surface of the substrate for removing the liquid from the movable member, It can suppress adhering to a lower surface.
  • the amount per unit time for supplying the second liquid to the upper surface of the substrate in the third step is less than half of the amount per unit time for supplying the first liquid to the upper surface of the substrate in the first step.
  • a substrate processing method may be configured. This can more reliably suppress the second liquid from adhering to the lower surface of the substrate.
  • the substrate processing method may be configured so that the second speed is zero.
  • the upper surface of the substrate can be kept sufficiently wet by performing the paddle process in the second step.
  • the present invention when a pattern is formed on the upper surface of the substrate, it is particularly preferable to apply the present invention. That is, when a pattern is formed on the upper surface of the substrate, the liquid supplied to the upper surface of the substrate rotating at a high speed (first speed) spreads between adjacent patterns as it spreads over the entire upper surface of the substrate. At this time, if the liquid between the patterns evaporates, the pattern may collapse due to the surface tension of the liquid. Therefore, it is necessary to prevent drying of the upper surface of the substrate even after the liquid has spread over the upper surface of the substrate. Therefore, even after the liquid supply to the upper surface of the substrate rotating at high speed is completed, the liquid is supplied to the upper surface of the substrate with the rotation speed of the substrate being reduced in order to keep the upper surface of the substrate wet.
  • the present invention can remove the liquid adhering to the movable member during the paddle process by rotating the movable member at a high speed while ensuring a wide interval between the lower surface of the substrate and the movable member. Is preferred.
  • the fourth step of supplying the third liquid containing the filler filled between the adjacent patterns to the upper surface of the substrate while rotating the substrate at a fourth speed higher than the second speed is performed after the third step.
  • a substrate processing method is configured to further include the substrate processing method. This has the following advantages. That is, when the humidity rises due to a large amount of liquid adhering to the movable member due to execution of the paddle process, the filler in the third liquid supplied to the upper surface of the substrate in the subsequent fourth step changes in quality, and the third liquid In some cases, the formation of the liquid film and the filling of the filling material between the patterns may be hindered.
  • the liquid adhering to the movable member is removed during the paddle process by rotating the movable member at a high speed while ensuring a wide space between the lower surface of the substrate and the movable member. . Therefore, formation of the liquid film of the third liquid and filling of the filler between the patterns can be appropriately executed.
  • the substrate processing method is configured such that the first liquid is a rinsing liquid for rinsing the upper surface of the substrate including between the patterns of the substrate, and the filler is filled between the patterns in which the rinsing liquid is replaced. May be.
  • an inert gas is supplied between the lower surface of the substrate and the upper surface of the movable member, and the air flow of the inert gas from the rotation center of the substrate toward the periphery of the substrate is reduced to the lower surface side of the substrate.
  • the substrate processing method may be configured so as to be generated. In such a configuration, the flow of the liquid (first liquid) from the upper surface to the lower surface of the substrate can be more reliably suppressed by the air flow of the inert gas.
  • the present invention can be applied to all substrate processing techniques for executing a process of supplying a liquid to the upper surface of a substrate.
  • Substrate processing apparatus 34 Rotation drive part (1st drive part), 35 ... Cover plate, 37 ... Elevation drive part (2nd drive part), 9 ... Controller (control part), Nc ... Upper nozzle (liquid supply) Part), W ... substrate, Wf ... front surface, Wb ... back surface, Wp ... pattern, Pc ... proximity position, Pd ... separation position, v1 ... speed (first speed), v2 ... speed (second speed), v3 ... speed. (Third speed), v4... Speed (fourth speed)

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Cleaning Or Drying Semiconductors (AREA)
PCT/JP2017/025229 2016-09-16 2017-07-11 基板処理方法、基板処理装置 WO2018051620A1 (ja)

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EP3594748A1 (en) * 2018-07-09 2020-01-15 C&D Semiconductor Services. Inc Optimal exposure of a bottom surface of a substrate material and/or edges thereof for cleaning in a spin coating device

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JP2018046226A (ja) 2018-03-22
KR20190029718A (ko) 2019-03-20
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