WO2018047631A1 - 樹脂マスク剥離用洗浄剤組成物 - Google Patents
樹脂マスク剥離用洗浄剤組成物 Download PDFInfo
- Publication number
- WO2018047631A1 WO2018047631A1 PCT/JP2017/030352 JP2017030352W WO2018047631A1 WO 2018047631 A1 WO2018047631 A1 WO 2018047631A1 JP 2017030352 W JP2017030352 W JP 2017030352W WO 2018047631 A1 WO2018047631 A1 WO 2018047631A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- component
- cleaning composition
- mass
- resin mask
- composition according
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 219
- 239000011347 resin Substances 0.000 title claims abstract description 123
- 229920005989 resin Polymers 0.000 title claims abstract description 123
- 239000012459 cleaning agent Substances 0.000 title abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000003960 organic solvent Substances 0.000 claims abstract description 17
- 239000003513 alkali Substances 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims description 217
- 238000000034 method Methods 0.000 claims description 52
- 238000004519 manufacturing process Methods 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 18
- -1 nitrogen-containing compound Chemical class 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- 238000011161 development Methods 0.000 claims description 9
- 238000009835 boiling Methods 0.000 claims description 4
- 238000004065 wastewater treatment Methods 0.000 abstract description 18
- 239000012141 concentrate Substances 0.000 description 30
- 239000003599 detergent Substances 0.000 description 23
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 19
- 239000007788 liquid Substances 0.000 description 17
- 238000007747 plating Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- 238000012360 testing method Methods 0.000 description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- CUZKCNWZBXLAJX-UHFFFAOYSA-N 2-phenylmethoxyethanol Chemical compound OCCOCC1=CC=CC=C1 CUZKCNWZBXLAJX-UHFFFAOYSA-N 0.000 description 9
- 238000007654 immersion Methods 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- IBLKWZIFZMJLFL-UHFFFAOYSA-N 1-phenoxypropan-2-ol Chemical compound CC(O)COC1=CC=CC=C1 IBLKWZIFZMJLFL-UHFFFAOYSA-N 0.000 description 7
- MQWCXKGKQLNYQG-UHFFFAOYSA-N 4-methylcyclohexan-1-ol Chemical compound CC1CCC(O)CC1 MQWCXKGKQLNYQG-UHFFFAOYSA-N 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- RNDNSYIPLPAXAZ-UHFFFAOYSA-N 2-Phenyl-1-propanol Chemical compound OCC(C)C1=CC=CC=C1 RNDNSYIPLPAXAZ-UHFFFAOYSA-N 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 230000007103 stamina Effects 0.000 description 6
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000012851 eutrophication Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- VTBOTOBFGSVRMA-UHFFFAOYSA-N 1-Methylcyclohexanol Chemical compound CC1(O)CCCCC1 VTBOTOBFGSVRMA-UHFFFAOYSA-N 0.000 description 4
- HTSABYAWKQAHBT-UHFFFAOYSA-N 3-methylcyclohexanol Chemical group CC1CCCC(O)C1 HTSABYAWKQAHBT-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- DYUQAZSOFZSPHD-UHFFFAOYSA-N Phenylpropanol Chemical compound CCC(O)C1=CC=CC=C1 DYUQAZSOFZSPHD-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 150000003863 ammonium salts Chemical class 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- LHGVFZTZFXWLCP-UHFFFAOYSA-N guaiacol Chemical compound COC1=CC=CC=C1O LHGVFZTZFXWLCP-UHFFFAOYSA-N 0.000 description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 3
- 239000000543 intermediate Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- 241000282994 Cervidae Species 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000004480 active ingredient Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- MZQZXSHFWDHNOW-UHFFFAOYSA-N 1-phenylpropane-1,2-diol Chemical compound CC(O)C(O)C1=CC=CC=C1 MZQZXSHFWDHNOW-UHFFFAOYSA-N 0.000 description 1
- OHJYHAOODFPJOD-UHFFFAOYSA-N 2-(2-ethylhexoxy)ethanol Chemical compound CCCCC(CC)COCCO OHJYHAOODFPJOD-UHFFFAOYSA-N 0.000 description 1
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- CCTFMNIEFHGTDU-UHFFFAOYSA-N 3-methoxypropyl acetate Chemical compound COCCCOC(C)=O CCTFMNIEFHGTDU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004111 Potassium silicate Substances 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 150000001414 amino alcohols Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000003242 anti bacterial agent Substances 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 229940064004 antiseptic throat preparations Drugs 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229960001867 guaiacol Drugs 0.000 description 1
- VUVZASHBYYMLRC-UHFFFAOYSA-N heptane-2,3-diol Chemical compound CCCCC(O)C(C)O VUVZASHBYYMLRC-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/08—Liquid soap, e.g. for dispensers; capsuled
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Definitions
- the present disclosure relates to a resin mask peeling cleaning composition, a resin mask removing method using the cleaning composition, and an electronic component manufacturing method.
- Patent Document 1 contains 0.5 to 3.0 parts by mass of quaternary ammonium hydroxide in 100 parts by mass of the cleaning composition, Containing 3.0 parts by weight or more and 10.0 parts by weight or less of an acidic amine, 0.3 parts by weight or more and 2.5 parts by weight or less of an acid or an ammonium salt thereof, and 50.0 parts by weight or more and 95.0 parts by weight of water.
- the cleaning composition for resin mask layers used for manufacture of the circuit board containing below mass part is described.
- Patent Document 2 discloses that about 2 to 55% by weight of the total weight of the composition of at least one alkanolamine, at least one morpholine, or a mixture thereof and about 20 to 94% by weight of at least one organic.
- a composition for removing a film resist comprising a solvent and about 0.5-60% by weight water is described.
- Patent Document 3 discloses that (a) a fluorine compound, (b) an intramolecular molecule used for removal of residues generated after etching and ashing (ashing) in the manufacture of semiconductor elements such as IC and LSI and liquid crystal panel elements. Describes a resist stripping solution containing a divalent alcohol compound having an ether bond, (c) an organic acid compound, and (d) water.
- Patent Document 4 is a stripping solution for stripping an unexposed portion of an epoxy resin photosolder resist as a so-called resist developing solution, and is characterized in that an additive of propylene glycol ether is added to an alkaline solution. A stripping solution is described.
- Patent Document 5 a) inorganic alkali compound 0 for removing the resist of unnecessary film components formed on the edge of the resist film coated on the substrate or on the rear surface of the substrate and preventing the corrosion of the equipment. 1 to 5% by weight, b) 0.1 to 5% by weight of organic amine, c) 0.1 to 30% by weight of organic solvent, d) 1: 5 to 25 of anionic surfactant and nonionic surfactant.
- a thinner composition for resist removal characterized by containing 0.01 to 5% by weight of a surfactant in a weight ratio of e) and 60 to 99% by weight of water.
- the resin mask is formed using a resist whose physical properties such as solubility in a developing solution are changed by light, electron beam, or the like. Resists are roughly classified into negative types and positive types according to the method of reaction with light or electron beams. A negative resist has a characteristic that the solubility in a developing solution is lowered when exposed. A layer containing a negative resist (hereinafter also referred to as a “negative resist layer”) has an exposed portion after exposure and development processing. Used as a resin mask.
- a positive resist has a property of increasing the solubility in a developer when exposed to light.
- a layer containing a positive resist (hereinafter also referred to as a “positive resist layer”) has an exposed portion after exposure and development processing. The unexposed part is removed and used as a resin mask.
- a resin mask having such characteristics, it is possible to form fine connection portions of a circuit board such as metal wiring, metal pillars, and solder bumps.
- the characteristics of the resin mask change due to the plating process or the heat treatment used when these connection parts are formed, and it becomes difficult to remove the resin mask in the next cleaning process.
- negative resists have the property of being cured by reaction with light or electron beams
- resin masks formed using negative resists can be obtained by plating or heat treatment used at the time of forming connection parts. Curing progresses more than necessary and cannot be completely removed in the cleaning process, or the time required for removal becomes very long, thereby damaging the substrate and the metal surface. Since the resin mask that has been plated and / or heat-treated in this manner is difficult to peel off, the cleaning composition is required to have high resin mask removability. On the other hand, digitization has progressed in various fields, and the production volume of printed circuit boards and the like has increased.
- the present disclosure provides a resin mask peeling cleaning composition having excellent resin mask removability and a small wastewater treatment load, a resin mask removing method and a substrate manufacturing method using the cleaning composition.
- the present disclosure contains an inorganic alkali (component A), an organic solvent (component B), and water (component C).
- component A an organic solvent
- component B an organic solvent
- component C water
- the content of Component C when using the cleaning composition is 85% by mass or more, It is related with the cleaning composition for resin mask peeling whose mass ratio (A / B) of component A with respect to component B is 1 or more and 60 or less.
- the present disclosure in one aspect, relates to a method for removing a resin mask, including a step of cleaning an object to be cleaned to which the resin mask is attached with the cleaning composition according to the present disclosure.
- the present disclosure in one aspect, relates to a method for manufacturing an electronic component including a step of cleaning an object to be cleaned to which a resin mask is attached with the cleaning composition according to the present disclosure.
- the present disclosure in one aspect, relates to the use of the cleaning composition according to the present disclosure for the manufacture of electronic components.
- the present disclosure it is possible to provide a resin mask peeling cleaning composition having excellent resin mask removability and a small wastewater treatment load. And by using the cleaning composition according to the present disclosure, a high-quality electronic component can be obtained with a high yield. Furthermore, an electronic component having a fine wiring pattern can be efficiently manufactured by using the cleaning composition according to the present disclosure.
- the present disclosure includes an inorganic alkali (component A), an organic solvent (component B) having a specific Hansen solubility parameter, and water (component C), the content of component C, and the mass ratio of component A and component B Is based on the knowledge that the resin mask, in particular, the plating mask and / or the heat-treated resin mask can be efficiently removed even with a low wastewater treatment load. Moreover, it is based on the knowledge that eutrophication of a lake can be suppressed by not including a nitrogen-containing compound and a phosphorus-containing compound in a cleaning composition.
- the present invention relates to a resin mask peeling cleaning composition (hereinafter, also referred to as “cleaning composition according to the present disclosure”) in which the mass ratio (A / B) of component A to B is 1 or more and 60 or less.
- the cleaning composition according to the present disclosure can efficiently remove a resin mask, in particular, a plating mask and / or a heat-treated resin mask, even at a low wastewater treatment load. And by using the cleaning composition according to the present disclosure, a high-quality electronic component can be obtained with a high yield. Furthermore, an electronic component having a fine wiring pattern can be efficiently manufactured by using the cleaning composition according to the present disclosure.
- the peeling of the resin mask is caused by interfacial stress due to the components of the cleaning composition penetrating into the resin mask and swelling of the resin mask.
- component A inorganic alkali
- component C water
- penetrate into the resin mask thereby promoting dissociation of the alkali-soluble resin blended in the resin mask and further charge repulsion. This promotes the peeling of the resin mask.
- the component B organic solvent having a specific Hansen solubility parameter acts between the substrate surface and the resin mask, so that the adhesion between the substrate and the resin is reduced, and further the peeling of the resin mask is promoted. It is estimated that the resin mask removability is remarkably improved.
- the content of the water of component C at the time of use of the cleaning composition according to the present disclosure is as high as 85% by mass or more, the content of organic matter in the cleaning composition can be reduced, and the wastewater treatment load is increased. It is estimated that it can be suppressed. Thereby, it is considered that a fine circuit (wiring pattern) can be formed on the substrate efficiently and with high cleanliness.
- the present disclosure is not limited to this mechanism.
- the resin mask is a mask for protecting a material surface from processing such as etching, plating, and heating, that is, a mask that functions as a protective film.
- the resin mask in one or a plurality of embodiments, the resist layer after the exposure or development step, and at least one treatment of exposure and development (hereinafter, also referred to as “exposure and / or development treatment”) are performed.
- a resist layer or a cured resist layer may be mentioned.
- a resin material for forming the resin mask in one or a plurality of embodiments, a film-like photosensitive resin or a resist film may be used.
- a general-purpose resist film can be used.
- composition according to the present disclosure includes an inorganic alkali (component A).
- Component A can be used alone or in combination of two or more.
- Component A includes, for example, one or a combination of two or more selected from sodium hydroxide, potassium hydroxide, lithium hydroxide, calcium hydroxide, sodium carbonate, potassium carbonate, sodium silicate and potassium silicate, and resin. From the viewpoint of improving mask removability, one or a combination of two or more selected from sodium hydroxide, potassium hydroxide, sodium carbonate and potassium carbonate is preferable, and at least one of sodium hydroxide and potassium hydroxide is more preferable.
- the content of Component A during use of the cleaning composition according to the present disclosure is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, from the viewpoint of improving resin mask removability. More preferably 1% by weight or more, still more preferably 1% by weight or more, still more preferably 2% by weight or more, and preferably 15% by weight or less from the viewpoint of improving resin mask removability and suppressing metal corrosion. The following is more preferable, 7% by mass or less is further preferable, and 5% by mass or less is more preferable.
- component A is composed of two or more inorganic alkalis
- the content of component A refers to the total content thereof.
- the “content of each component when using the cleaning composition” refers to the content of each component at the time of cleaning, that is, when the cleaning composition is used for cleaning.
- Component B Organic solvent
- the cleaning composition according to the present disclosure includes an organic solvent (component B).
- Component B can be used alone or in combination of two or more.
- the cleaning composition according to the present disclosure contains two or more kinds of organic solvents (hereinafter also referred to as “mixed organic solvents”), the Hansen solubility parameter of the entire mixed organic solvent may not be within the above range. If the solvent contains at least one organic solvent having a Hansen solubility parameter within the above range, the effects of the present disclosure can be exhibited.
- HSP Hansen solubility parameter
- the component B is not particularly limited as long as the distance between the HSP coordinates of the component B and the component coordinates X satisfies the above formula.
- propylene glycol phenyl ether (distance: 0.32 MPa 0.5 )
- Glycol ethers such as ethylene glycol monobenzyl ether (distance: 1.18 MPa 0.5 ) and ethylene glycol mono n-hexyl ether (distance: 1.50 MPa 0.5 ); 1-methylcyclohexanol (distance: 1.19 MPa 0.5 ), 3 Monoalkyl alcohols such as methylcyclohexanol (distance: 1.08 MPa 0.5 ) and 4-methylcyclohexanol (distance: 0.59 MPa 0.5 ); 1-phenyl-1-propanol (distance: 1.39 MPa 0.5 ), 2- Phenyl-1-propanol (distance: 1.37 MPa 0.5 ), etc.
- Examples thereof include one or a combination of two or more selected from aromatic alcohols and the like.
- one or more selected from propylene glycol phenyl ether, ethylene glycol monobenzyl ether, ethylene glycol mono n-hexyl ether, 1-phenyl-1-propanol and 2-phenyl-1-propanol The combination of these is preferable, and at least one of propylene glycol phenyl ether and ethylene glycol monobenzyl ether is more preferable.
- ethylene glycol monobenzyl ether ethylene glycol mono n-hexyl ether, 1-methylcyclohexanol, 2-phenyl-1-propanol and 1-phenyl-1-
- propanol are preferable, and one or more combinations selected from ethylene glycol monobenzyl ether, 2-phenyl-1-propanol and 1-phenyl-1-propanol are more preferable.
- the numerical value in parentheses indicates the distance (unit: MPa 0.5 ) between the HSP coordinate of component B and the component coordinate X.
- stamina means that good cleaning properties are ensured even when the cleaning composition is used for a long time (recycle cleaning).
- Component B in the present disclosure preferably has a high boiling point from the viewpoint of fire risk reduction due to ignition and stamina properties.
- the boiling point of Component B is preferably 160 ° C. or higher, more preferably 250 ° C. or higher.
- component B preferably has high water solubility from the viewpoint of concentration.
- the solubility of component B in 100 mL of water is preferably 0.3 g or more.
- the content of Component B when using the cleaning composition according to the present disclosure is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, from the viewpoint of improving the resin mask removability. 1% by mass or more is more preferable, from the viewpoint of stamina, 0.2% by mass or more is more preferable, and from the viewpoint of reducing wastewater treatment load, 3% by mass or less is preferable, and 2% by mass or less is more preferable. Preferably, 1 mass% or less is still more preferable, and 0.5 mass% or less is still more preferable.
- component B consists of two or more organic solvents
- the content of component B refers to the total content thereof.
- the mass ratio (A / B) of component A to component B in the cleaning composition according to the present disclosure is 1 or more and 60 or less, preferably 1.1 or more from the viewpoint of improving the resin mask removability. 2 or more is more preferable, 1.5 or more is still more preferable, 2 or more is more preferable, 3 or more is more preferable, 5 or more is still more preferable, 10 or more is still more preferable, 15 or more is still more preferable, and From the viewpoint of reducing storage stability and wastewater treatment load, it is preferably 50 or less, more preferably 40 or less, still more preferably 30 or less, and even more preferably 20 or less.
- the cleaning composition according to the present disclosure includes water (component C).
- water of component C ion exchange water, RO water, distilled water, pure water, and ultrapure water can be used. What is necessary is just to set content of water suitably according to the usage condition of the cleaning composition which concerns on this indication.
- Content of the component C at the time of use of the cleaning composition which concerns on this indication is 85 mass% or more, and 90 mass% or more is preferable from a viewpoint of a resin mask removability improvement, and 95 mass% or more is more preferable. And from the same viewpoint, 99 mass% or less is preferable, 98 mass% or less is more preferable, 97 mass% or less is still more preferable.
- the cleaning composition according to the present disclosure may contain an optional component as necessary in addition to the components A to C.
- optional components include components that can be used in ordinary cleaning agents, such as chelating agents, thickeners, dispersants, rust inhibitors, basic substances, surfactants, polymer compounds, and solubilization. Agents, antioxidants, antiseptics, antifoaming agents, antibacterial agents and the like.
- the total content of optional components during use of the cleaning composition according to the present disclosure is preferably 0% by mass or more and 2.0% by mass or less, more preferably 0% by mass or more and 1.5% by mass or less, and 0% by mass. The content is more preferably 1.3% by mass or less and still more preferably 0% by mass or more and 1.0% by mass or less.
- the total content of Component B and the organic matter derived from the optional component in the cleaning composition according to the present disclosure is preferably 3% by mass or less, more preferably 2% by mass or less. % Or less is more preferable, 0.5% by mass or less is more preferable, and from the viewpoint of improving resin mask removability, 0.01% by mass or more is preferable, 0.05% by mass or more is more preferable, and 0.1% More preferably, it is more than mass%.
- the cleaning composition according to the present disclosure preferably contains substantially no nitrogen-containing compound and phosphorus-containing compound from the viewpoint of reducing wastewater treatment load and suppressing eutrophication of the drainage area.
- substantially free means that the total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning composition according to the present disclosure is less than 0.1 mass%.
- the total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning composition according to the present disclosure is preferably 0.05% by mass or less from the viewpoint of reducing wastewater treatment load and suppressing eutrophication of the drainage area. 0.01 mass% or less is more preferable, and 0 mass% is still more preferable.
- nitrogen-containing compound examples include nitrogen-containing compounds that have been widely used as a cleaning composition, and examples thereof include at least one or a combination of two or more selected from amines and salts thereof, ammonia, and ammonium salts.
- amine examples include amino alcohols such as monoethanolamine and diethanolamine.
- ammonium salt examples include quaternary ammonium salts such as tetramethylammonium hydroxide (TMAH).
- phosphorus-containing compounds include phosphorus-containing compounds that have been widely used in the past as cleaning compositions, such as phosphoric acid and salts thereof, condensed phosphoric acid such as pyrophosphoric acid, polyphosphoric acid, and metaphosphoric acid, and salts thereof. Inorganic phosphoric acid, organic phosphoric acid, and a combination of two or more selected from phosphoric esters.
- the cleaning composition according to the present disclosure can be produced by blending the components A to C and, if necessary, the above-mentioned optional components by a known method.
- the cleaning composition according to the present disclosure can be formed by blending at least the components A to C.
- the present disclosure relates to a method for producing a cleaning composition comprising a step of blending at least the components A to C.
- “compounding” includes mixing the components A to C and other components as necessary at the same time or in any order.
- the preferable blending amount of each component may be the same as the preferable content of each component of the cleaning composition according to the present disclosure described above.
- the pH at the time of use of the cleaning composition according to the present disclosure is preferably 10.0 or more, more preferably 10.5 or more from the viewpoint of improving the resin mask removability, and 14 or less from the viewpoint of suppressing metal corrosion. Is preferable, 13.9 or less is more preferable, and 13.7 or less is still more preferable.
- the pH is the pH of the cleaning composition at 25 ° C., and can be measured using, for example, a pH meter (A Denki Kogyo Co., Ltd., HM-30G).
- the pH is adjusted with inorganic acids such as nitric acid and sulfuric acid; organic acids such as oxycarboxylic acid, polyvalent carboxylic acid, aminopolycarboxylic acid and amino acid; and metal salts, ammonium salts, ammonia, amines and the like thereof. It can adjust by mix
- the cleaning composition according to the present disclosure may be prepared as a concentrate in which the amount of water of component C is reduced within a range that does not impair storage stability by causing separation or precipitation.
- the concentrate of the cleaning composition is preferably a concentrate having a dilution ratio of 3 times or more from the viewpoint of transportation and storage, and is preferably a concentrate having a dilution ratio of 10 times or less from the viewpoint of storage stability. .
- the concentrate of the cleaning composition can be used by diluting with water so that the components A to C have the above-described content (that is, the content at the time of cleaning) at the time of use.
- the concentrate of a cleaning composition can also be used by adding each component separately at the time of use.
- “when using” or “when cleaning” the cleaning composition of the concentrated solution refers to a state in which the concentrate of the cleaning composition is diluted.
- the content of the component A in the cleaning composition concentrate is preferably 1% by mass or more from the viewpoint of improving the resin mask removability, and is 2% by mass.
- the above is more preferable, 5% by mass or more is further preferable, 10% by mass or more is more preferable, and 40% by mass or less is preferable, and 30% by mass or less is more preferable from the viewpoint of metal corrosion inhibition and storage stability. 20 mass% or less is still more preferable, and 10 mass% or less is still more preferable.
- the content of Component B in the cleaning composition concentrate is preferably 0.1% by mass or more from the viewpoint of improving resin mask removability. .2% by mass or more is more preferable, 0.5% by mass or more is more preferable, 1% by mass or more is more preferable, and 10% by mass or less is preferable from the viewpoint of reducing storage stability and wastewater treatment load. 5 mass% or less is more preferable, 2 mass% or less is still more preferable, and 1.5 mass% or less is still more preferable.
- the content of the component C in the cleaning composition concentrate is 50 mass from the viewpoint of improving the resin mask removability and stabilizing the cleaning composition.
- % Or more preferably 60% by weight or more, more preferably 70% by weight or more, and from the same viewpoint, 95% by weight or less is preferable, 90% by weight or less is more preferable, and 85% by weight or less is more preferable.
- the pH of the concentrate of the cleaning composition according to the present disclosure is preferably 10.0 or more, more preferably 10.5 or more, from the viewpoint of improving the removability of the resin mask after dilution, and during storage and handling. From the viewpoint of safety, 14 or less is preferable.
- the cleaning composition according to the present disclosure can be used for cleaning an object to be cleaned to which a resin mask is attached.
- the objects to be cleaned include electronic components and production intermediates thereof.
- the electronic component include at least one component selected from metal plates such as a printed board, a wafer, a copper plate, and an aluminum plate.
- the said manufacturing intermediate is an intermediate product in the manufacturing process of an electronic component, Comprising: The intermediate product after a resin mask process is included.
- the object to be cleaned to which the resin mask is attached for example, by performing a process such as soldering using a resin mask or a plating process (copper plating, aluminum plating, nickel plating, etc.), wiring or Examples thereof include an electronic component having a connection terminal or the like formed on the surface of the substrate.
- the cleaning composition according to the present disclosure is suitable for cleaning an object to be cleaned to which a resin mask or a plating and / or heat-treated resin mask is attached in terms of cleaning effect.
- the resin mask may be, for example, a negative type resin mask or a positive type resin mask, and a negative type resin mask is preferable from the viewpoint that the effects of the present disclosure are easily exhibited.
- the negative type resin mask include negative dry film resists that have been exposed and / or developed.
- the negative type resin mask is formed using a negative type resist, and examples thereof include a negative type resist layer that has been exposed and / or developed.
- the positive resin mask is formed using a positive resist, and examples thereof include a positive resist layer that has been exposed and / or developed.
- the present disclosure relates to a method for removing a resin mask, which includes contacting an object to be cleaned to which the resin mask is attached with the cleaning composition according to the present disclosure (hereinafter, also referred to as a removal method according to the present disclosure).
- the removal method according to the present disclosure includes a step of cleaning an object to be cleaned to which a resin mask is attached with the cleaning composition according to the present disclosure. Examples of the objects to be cleaned include the objects to be cleaned described above.
- Examples of a method of bringing the cleaning composition according to the present disclosure into contact with an object to be cleaned or a method of cleaning the object to be cleaned with the cleaning composition according to the present disclosure include, for example, in a cleaning bath containing the cleaning composition Examples include a method of contacting by dipping, a method of injecting a cleaning composition into a spray form (shower method), an ultrasonic cleaning method of irradiating ultrasonically during immersion, and the like.
- the cleaning composition according to the present disclosure can be used for cleaning as it is without being diluted.
- the removal method according to the present disclosure preferably includes a step of bringing a cleaning object into contact with the cleaning composition, rinsing with water, and drying.
- the removal method according to the present disclosure it is possible to efficiently remove a resin mask, particularly a resin mask that has been subjected to plating treatment and / or heat treatment.
- the ultrasonic wave has a relatively high frequency.
- the ultrasonic irradiation conditions are preferably 26 to 72 kHz and 80 to 1500 W, and more preferably 36 to 72 kHz and 80 to 1500 W.
- the manufacturing method of the electronic component which concerns on this indication includes the process of wash
- the objects to be cleaned include the objects to be cleaned described above.
- the method for manufacturing an electronic component according to the present disclosure can effectively remove the resin mask attached to the electronic component while performing the cleaning using the cleaning composition according to the present disclosure while suppressing corrosion of the metal. This makes it possible to manufacture highly reliable electronic components. Furthermore, by performing the removal method according to the present disclosure, it becomes easy to remove the resin mask attached to the electronic component, so that the cleaning time can be shortened and the manufacturing efficiency of the electronic component can be improved.
- the present disclosure is a kit for use in any one of the removal method according to the present disclosure and the method for manufacturing an electronic component according to the present disclosure, and includes the components A to C constituting the cleaning composition according to the present disclosure.
- the present invention relates to a kit containing at least one of the components in a state where it is not mixed with other components. According to the kit according to the present disclosure, it is possible to obtain a cleaning composition having excellent resin mask removability and a small wastewater treatment load.
- the kit according to the present disclosure includes, for example, a solution containing the component A (first liquid) and a solution containing the component B (second liquid) in a state where they are not mixed with each other. At least one of the two liquids further contains a component C, and a kit (two-component detergent composition) in which the first liquid and the second liquid are mixed at the time of use can be mentioned.
- a kit two-component detergent composition in which the first liquid and the second liquid are mixed at the time of use can be mentioned.
- Each of the first liquid and the second liquid may contain the above-described optional components as necessary.
- the present disclosure further relates to the following detergent composition, removal method, and production method.
- ⁇ 1> Contains an inorganic alkali (component A), an organic solvent (component B) and water (component C),
- the content of Component C when using the cleaning composition is 85% by mass or more,
- the cleaning composition for resin mask peeling whose mass ratio (A / B) of the component A with respect to the component B is 1-60.
- Component B is propylene glycol phenyl ether, ethylene glycol monobenzyl ether, ethylene glycol mono n-hexyl ether, 1-methylcyclohexanol, 3-methylcyclohexanol, 4-methylcyclohexanol, 1-phenyl-1-
- the cleaning composition according to ⁇ 1> which is one or a combination of two or more selected from propanol and 2-phenyl-1-propanol.
- the content of the component A at the time of use of the cleaning composition is 0.1% by mass or more and 15% by mass or less
- the cleaning composition according to ⁇ 1> or ⁇ 2>, wherein the content of component B when the cleaning composition is used is 0.01% by mass or more and 3% by mass or less.
- the content of component A when using the cleaning composition is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, still more preferably 0.5% by mass or more, and 1% by mass.
- the content of component A when using the cleaning composition is preferably 15% by mass or less, more preferably 10% by mass or less, further preferably 7% by mass or less, and further more preferably 5% by mass or less.
- ⁇ 6> The cleaning composition according to any one of ⁇ 1> to ⁇ 5>, wherein the boiling point of component B is preferably 160 ° C. or higher, and more preferably 250 ° C. or higher.
- ⁇ 7> The cleaning composition according to any one of ⁇ 1> to ⁇ 6>, wherein the solubility of Component B in 100 mL of water is 0.3 g or more.
- the content of Component B during use of the cleaning composition is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, still more preferably 0.1% by mass or more, and 0.2%
- the content of Component B during use of the cleaning composition is preferably 3% by mass or less, more preferably 2% by mass or less, still more preferably 1% by mass or less, and even more preferably 0.5% by mass or less.
- the cleaning composition according to any one of ⁇ 1> to ⁇ 8> is 0.01% by mass or more, more preferably 0.05% by mass or more, still more preferably 0.1% by mass or more, and 0.2%
- the cleaning composition according to any one of ⁇ 1> to ⁇ 8> is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, still more preferably 0.1% by mass or more, and 0.2%
- the mass ratio (A / B) of component A to component B in the cleaning composition is 1 or more and 60 or less, preferably 1.1 or more, more preferably 1.2 or more, and 1.5 or more. Is more preferably, 2 or more is still more preferable, 3 or more is more preferable, 5 or more is still more preferable, 10 or more is still more preferable, and 15 or more is still more preferable, ⁇ 1> to ⁇ 9>
- the mass ratio (A / B) of component A to component B in the cleaning composition is preferably 50 or less, more preferably 40 or less, still more preferably 30 or less, and even more preferably 20 or less, ⁇ 1> To ⁇ 10>.
- the content of Component C during use of the cleaning composition is preferably 99% by mass or less, more preferably 98% by mass or less, and even more preferably 97% by mass or less, any one of ⁇ 1> to ⁇ 12>
- the total content of optional components during use of the cleaning composition is preferably 0% by mass or more and 2.0% by mass or less, more preferably 0% by mass or more and 1.5% by mass or less, and more preferably 0% by mass or more.
- the cleaning composition according to any one of ⁇ 1> to ⁇ 13> which is more preferably 1.3% by mass or less, and still more preferably 0% by mass or more and 1.0% by mass or less.
- the total content of organic substances in the cleaning composition is preferably 3% by mass or less, more preferably 2% by mass or less, still more preferably 1% by mass or less, and even more preferably 0.5% by mass or less.
- the total content of organic substances in the cleaning composition is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and further preferably 0.1% by mass or more, from ⁇ 1> to ⁇
- the cleaning composition according to any one of 15> is more preferably 1.3% by mass or less, and still more preferably 0% by mass or more and 1.0% by mass or less.
- the total content of organic substances in the cleaning composition is preferably 3% by mass or less, more preferably 2% by mass or less, still more preferably
- the cleaning composition according to any one of ⁇ 1> to ⁇ 16> which is substantially free of a nitrogen-containing compound and a phosphorus-containing compound.
- the total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning composition is less than 0.1 mass%, preferably 0.05 mass% or less, more preferably 0.01 mass% or less,
- the cleaning composition according to any one of ⁇ 1> to ⁇ 18>, wherein the pH during use of the cleaning composition is preferably 10.0 or more, and more preferably 10.5 or more.
- the pH in use of the cleaning composition is preferably 14 or less, more preferably 13.9 or less, and even more preferably 13.7 or less, the cleaning agent according to any one of ⁇ 1> to ⁇ 19> Composition.
- the content of component A in the concentrate of the detergent composition is preferably 1% by mass or more, more preferably 2% by mass or more, and more preferably 5% by mass or more.
- the content of component A in the concentrate of the detergent composition is preferably 40% by mass or less, more preferably 30% by mass or less, and 20% by mass or less.
- the content of Component B in the concentrate of the detergent composition is preferably 0.1% by mass or more, more preferably 0.2% by mass or more, and 0
- the content of component B in the concentrate of the detergent composition is preferably 10% by mass or less, more preferably 5% by mass or less, and more preferably 2% by mass or less.
- the content of component C in the concentrate of the detergent composition is preferably 50% by mass or more, more preferably 60% by mass or more, and 70% by mass or more.
- the content of component C in the concentrate of the detergent composition is preferably 95% by mass or less, more preferably 90% by mass or less, and 85% by mass or less.
- the cleaning composition according to any one of ⁇ 1> to ⁇ 25> which is more preferable.
- the pH of the cleaning composition concentrate is preferably 10.0 or more, more preferably 10.5 or more, any one of ⁇ 1> to ⁇ 26> The cleaning composition described in 1.
- the cleaning composition is a concentrate, the cleaning composition according to any one of ⁇ 1> to ⁇ 27>, wherein the pH of the cleaning composition is preferably 14 or less.
- the resin mask is a negative dry film resist subjected to at least one of exposure and development.
- ⁇ 30> A method for removing a resin mask, comprising a step of cleaning an object to be cleaned to which a resin mask is adhered with the cleaning composition according to any one of ⁇ 1> to ⁇ 29>.
- the removal method according to ⁇ 30>, wherein the object to be cleaned is a manufacturing intermediate for electronic components.
- ⁇ 32> A method for manufacturing an electronic component, comprising a step of cleaning an object to be cleaned to which a resin mask is attached with the cleaning composition according to any one of ⁇ 1> or ⁇ 29>.
- ⁇ 33> Use of the cleaning composition according to any one of ⁇ 1> to ⁇ 29> for manufacturing an electronic component.
- a kit comprising at least one of the components A to C constituting the detergent composition in a state where it is not mixed with other components.
- a solution containing component A (first liquid) and a solution containing component B (second liquid) are included in a state where they are not mixed with each other, and at least one of the first liquid and the second liquid is The kit according to ⁇ 34>, further comprising component C, wherein the first liquid and the second liquid are mixed at the time of use.
- ⁇ 36> Use of the cleaning composition according to any one of ⁇ 1> to ⁇ 29> for removing a resin mask from an object to be cleaned.
- ⁇ 37> Use of the cleaning composition according to any one of ⁇ 1> to ⁇ 29> for cleaning an electronic component.
- a photosensitive film for direct imaging (direct drawing) (manufactured by Hitachi Chemical Co., Ltd., Photec RD-1215, negative dry film resist) is applied to the surface of a glass epoxy multilayer substrate (manufactured by Hitachi Chemical Co., Ltd., MCL-E-679FG) as follows. After laminating under conditions, selectively exposing to cure the exposed area (exposure process), developing to remove the unexposed area (developing process), resist pattern (negative pattern of the following three pattern shapes) A substrate having a resin mask) was obtained. And the test piece (4 cm x 4.5 cm) was obtained by carrying out the copper plating process to the area
- Examples 27 to 29 and Comparative Examples 20 to 22 Add 10 kg of each of the detergent compositions of Examples 27 to 29 and Comparative Examples 20 to 22 to a 10 L stainless beaker, heat to 60 ° C., and spray 1 fluid nozzle (full cone) JJXP030 (manufactured by Ikeuchi Co., Ltd.) The test piece is sprayed for 3 minutes (pressure: 0.2 MPa, spray distance: 8 cm) while circulating at a flow rate of 3 L / min with a box type spray washing machine attached as a nozzle. And after immersing and immersing in the rinse tank which added 100g of water to a 100 mL glass beaker, it dries with a nitrogen blow.
- solid peelability indicates the peelability of the resin mask when the resist pattern is solid
- the cleaning compositions of Examples 1 to 29 are comparative examples 1 to 16, which do not contain a predetermined solvent (component B), inorganic alkalis Compared with Comparative Examples 17 to 22 not containing (Component A), the plated resin mask could be removed efficiently. That is, the cleaning compositions of Examples 1 to 29 were excellent in resin mask removability as compared with Comparative Examples 1 to 22.
- the cleaning composition of the present disclosure is useful as a cleaning composition used in the manufacturing process of an electronic component, shortening the cleaning process of the electronic component to which the resin mask is adhered, and the performance of the manufactured electronic component. Reliability can be improved and productivity of the semiconductor device can be improved.
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- Computer Hardware Design (AREA)
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KR1020197006640A KR102455657B1 (ko) | 2016-09-09 | 2017-08-24 | 수지 마스크 박리용 세정제 조성물 |
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Cited By (5)
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WO2020022491A1 (ja) * | 2018-07-27 | 2020-01-30 | 花王株式会社 | 洗浄方法 |
WO2020021721A1 (ja) * | 2018-07-27 | 2020-01-30 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
WO2022114110A1 (ja) * | 2020-11-30 | 2022-06-02 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
WO2022270333A1 (ja) * | 2021-06-24 | 2022-12-29 | 日油株式会社 | 回路基板用樹脂膜の剥離剤および回路基板の製造方法 |
EP4249107A4 (en) * | 2020-11-17 | 2024-10-16 | Tokyo Ohka Kogyo Co Ltd | FILM CLEANING SOLUTION AND FILM CLEANING METHOD |
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JPWO2019111479A1 (ja) * | 2017-12-07 | 2020-12-10 | 株式会社Jcu | レジストの剥離液 |
JP7020905B2 (ja) * | 2017-12-27 | 2022-02-16 | 花王株式会社 | 樹脂マスク剥離用洗浄剤組成物 |
US12091040B2 (en) | 2018-03-07 | 2024-09-17 | Koito Manufacturing Co., Ltd. | Vehicle cleaner system |
JP7290194B1 (ja) | 2022-10-19 | 2023-06-13 | Jsr株式会社 | 半導体処理用組成物及び処理方法 |
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TW201817864A (zh) | 2018-05-16 |
KR20190051965A (ko) | 2019-05-15 |
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CN109791377A (zh) | 2019-05-21 |
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