Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/42—Stripping or agents therefor
  • G03F7/422—Stripping or agents therefor using liquids only
  • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B08—CLEANING
  • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
  • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
  • B08B3/04—Cleaning involving contact with liquid
  • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
  • C11D17/08—Liquid soap, e.g. for dispensers; capsuled
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
  • C11D7/02—Inorganic compounds
  • C11D7/04—Water-soluble compounds
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
  • C11D7/22—Organic compounds
  • C11D7/26—Organic compounds containing oxygen
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
  • C11D7/50—Solvents
  • C11D7/5004—Organic solvents
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/42—Stripping or agents therefor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
  • C11D2111/10—Objects to be cleaned
  • C11D2111/14—Hard surfaces
  • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

• the present disclosure relates to a resin mask peeling cleaning composition, a resin mask removing method using the cleaning composition, and an electronic component manufacturing method.
• Patent Document 1 contains 0.5 to 3.0 parts by mass of quaternary ammonium hydroxide in 100 parts by mass of the cleaning composition, Containing 3.0 parts by weight or more and 10.0 parts by weight or less of an acidic amine, 0.3 parts by weight or more and 2.5 parts by weight or less of an acid or an ammonium salt thereof, and 50.0 parts by weight or more and 95.0 parts by weight of water.
• the cleaning composition for resin mask layers used for manufacture of the circuit board containing below mass part is described.
• Patent Document 2 discloses that about 2 to 55% by weight of the total weight of the composition of at least one alkanolamine, at least one morpholine, or a mixture thereof and about 20 to 94% by weight of at least one organic.
• a composition for removing a film resist comprising a solvent and about 0.5-60% by weight water is described.
• Patent Document 3 discloses that (a) a fluorine compound, (b) an intramolecular molecule used for removal of residues generated after etching and ashing (ashing) in the manufacture of semiconductor elements such as IC and LSI and liquid crystal panel elements. Describes a resist stripping solution containing a divalent alcohol compound having an ether bond, (c) an organic acid compound, and (d) water.
• Patent Document 4 is a stripping solution for stripping an unexposed portion of an epoxy resin photosolder resist as a so-called resist developing solution, and is characterized in that an additive of propylene glycol ether is added to an alkaline solution. A stripping solution is described.
• Patent Document 5 a) inorganic alkali compound 0 for removing the resist of unnecessary film components formed on the edge of the resist film coated on the substrate or on the rear surface of the substrate and preventing the corrosion of the equipment. 1 to 5% by weight, b) 0.1 to 5% by weight of organic amine, c) 0.1 to 30% by weight of organic solvent, d) 1: 5 to 25 of anionic surfactant and nonionic surfactant.
• a thinner composition for resist removal characterized by containing 0.01 to 5% by weight of a surfactant in a weight ratio of e) and 60 to 99% by weight of water.
• the resin mask is formed using a resist whose physical properties such as solubility in a developing solution are changed by light, electron beam, or the like. Resists are roughly classified into negative types and positive types according to the method of reaction with light or electron beams. A negative resist has a characteristic that the solubility in a developing solution is lowered when exposed. A layer containing a negative resist (hereinafter also referred to as a “negative resist layer”) has an exposed portion after exposure and development processing. Used as a resin mask.
• a positive resist has a property of increasing the solubility in a developer when exposed to light.
• a layer containing a positive resist (hereinafter also referred to as a “positive resist layer”) has an exposed portion after exposure and development processing. The unexposed part is removed and used as a resin mask.
• a resin mask having such characteristics, it is possible to form fine connection portions of a circuit board such as metal wiring, metal pillars, and solder bumps.
• the characteristics of the resin mask change due to the plating process or the heat treatment used when these connection parts are formed, and it becomes difficult to remove the resin mask in the next cleaning process.
• negative resists have the property of being cured by reaction with light or electron beams
• resin masks formed using negative resists can be obtained by plating or heat treatment used at the time of forming connection parts. Curing progresses more than necessary and cannot be completely removed in the cleaning process, or the time required for removal becomes very long, thereby damaging the substrate and the metal surface. Since the resin mask that has been plated and / or heat-treated in this manner is difficult to peel off, the cleaning composition is required to have high resin mask removability. On the other hand, digitization has progressed in various fields, and the production volume of printed circuit boards and the like has increased.
• the present disclosure provides a resin mask peeling cleaning composition having excellent resin mask removability and a small wastewater treatment load, a resin mask removing method and a substrate manufacturing method using the cleaning composition.
• the present disclosure contains an inorganic alkali (component A), an organic solvent (component B), and water (component C).
• component A an organic solvent
• component B an organic solvent
• component C water
• the content of Component C when using the cleaning composition is 85% by mass or more, It is related with the cleaning composition for resin mask peeling whose mass ratio (A / B) of component A with respect to component B is 1 or more and 60 or less.
• the present disclosure in one aspect, relates to a method for removing a resin mask, including a step of cleaning an object to be cleaned to which the resin mask is attached with the cleaning composition according to the present disclosure.
• the present disclosure in one aspect, relates to a method for manufacturing an electronic component including a step of cleaning an object to be cleaned to which a resin mask is attached with the cleaning composition according to the present disclosure.
• the present disclosure in one aspect, relates to the use of the cleaning composition according to the present disclosure for the manufacture of electronic components.
• the present disclosure it is possible to provide a resin mask peeling cleaning composition having excellent resin mask removability and a small wastewater treatment load. And by using the cleaning composition according to the present disclosure, a high-quality electronic component can be obtained with a high yield. Furthermore, an electronic component having a fine wiring pattern can be efficiently manufactured by using the cleaning composition according to the present disclosure.
• the present disclosure includes an inorganic alkali (component A), an organic solvent (component B) having a specific Hansen solubility parameter, and water (component C), the content of component C, and the mass ratio of component A and component B Is based on the knowledge that the resin mask, in particular, the plating mask and / or the heat-treated resin mask can be efficiently removed even with a low wastewater treatment load. Moreover, it is based on the knowledge that eutrophication of a lake can be suppressed by not including a nitrogen-containing compound and a phosphorus-containing compound in a cleaning composition.
• the present invention relates to a resin mask peeling cleaning composition (hereinafter, also referred to as “cleaning composition according to the present disclosure”) in which the mass ratio (A / B) of component A to B is 1 or more and 60 or less.
• the cleaning composition according to the present disclosure can efficiently remove a resin mask, in particular, a plating mask and / or a heat-treated resin mask, even at a low wastewater treatment load. And by using the cleaning composition according to the present disclosure, a high-quality electronic component can be obtained with a high yield. Furthermore, an electronic component having a fine wiring pattern can be efficiently manufactured by using the cleaning composition according to the present disclosure.
• the peeling of the resin mask is caused by interfacial stress due to the components of the cleaning composition penetrating into the resin mask and swelling of the resin mask.
• component A inorganic alkali
• component C water
• penetrate into the resin mask thereby promoting dissociation of the alkali-soluble resin blended in the resin mask and further charge repulsion. This promotes the peeling of the resin mask.
• the component B organic solvent having a specific Hansen solubility parameter acts between the substrate surface and the resin mask, so that the adhesion between the substrate and the resin is reduced, and further the peeling of the resin mask is promoted. It is estimated that the resin mask removability is remarkably improved.
• the content of the water of component C at the time of use of the cleaning composition according to the present disclosure is as high as 85% by mass or more, the content of organic matter in the cleaning composition can be reduced, and the wastewater treatment load is increased. It is estimated that it can be suppressed. Thereby, it is considered that a fine circuit (wiring pattern) can be formed on the substrate efficiently and with high cleanliness.
• the present disclosure is not limited to this mechanism.
• the resin mask is a mask for protecting a material surface from processing such as etching, plating, and heating, that is, a mask that functions as a protective film.
• the resin mask in one or a plurality of embodiments, the resist layer after the exposure or development step, and at least one treatment of exposure and development (hereinafter, also referred to as “exposure and / or development treatment”) are performed.
• a resist layer or a cured resist layer may be mentioned.
• a resin material for forming the resin mask in one or a plurality of embodiments, a film-like photosensitive resin or a resist film may be used.
• a general-purpose resist film can be used.
• composition according to the present disclosure includes an inorganic alkali (component A).
• Component A can be used alone or in combination of two or more.
• Component A includes, for example, one or a combination of two or more selected from sodium hydroxide, potassium hydroxide, lithium hydroxide, calcium hydroxide, sodium carbonate, potassium carbonate, sodium silicate and potassium silicate, and resin. From the viewpoint of improving mask removability, one or a combination of two or more selected from sodium hydroxide, potassium hydroxide, sodium carbonate and potassium carbonate is preferable, and at least one of sodium hydroxide and potassium hydroxide is more preferable.
• the content of Component A during use of the cleaning composition according to the present disclosure is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, from the viewpoint of improving resin mask removability. More preferably 1% by weight or more, still more preferably 1% by weight or more, still more preferably 2% by weight or more, and preferably 15% by weight or less from the viewpoint of improving resin mask removability and suppressing metal corrosion. The following is more preferable, 7% by mass or less is further preferable, and 5% by mass or less is more preferable.
• component A is composed of two or more inorganic alkalis
• the content of component A refers to the total content thereof.
• the “content of each component when using the cleaning composition” refers to the content of each component at the time of cleaning, that is, when the cleaning composition is used for cleaning.
• Component B Organic solvent
• the cleaning composition according to the present disclosure includes an organic solvent (component B).
• Component B can be used alone or in combination of two or more.
• the cleaning composition according to the present disclosure contains two or more kinds of organic solvents (hereinafter also referred to as “mixed organic solvents”), the Hansen solubility parameter of the entire mixed organic solvent may not be within the above range. If the solvent contains at least one organic solvent having a Hansen solubility parameter within the above range, the effects of the present disclosure can be exhibited.
• HSP Hansen solubility parameter
• the component B is not particularly limited as long as the distance between the HSP coordinates of the component B and the component coordinates X satisfies the above formula.
• propylene glycol phenyl ether (distance: 0.32 MPa 0.5 )
• Glycol ethers such as ethylene glycol monobenzyl ether (distance: 1.18 MPa 0.5 ) and ethylene glycol mono n-hexyl ether (distance: 1.50 MPa 0.5 ); 1-methylcyclohexanol (distance: 1.19 MPa 0.5 ), 3 Monoalkyl alcohols such as methylcyclohexanol (distance: 1.08 MPa 0.5 ) and 4-methylcyclohexanol (distance: 0.59 MPa 0.5 ); 1-phenyl-1-propanol (distance: 1.39 MPa 0.5 ), 2- Phenyl-1-propanol (distance: 1.37 MPa 0.5 ), etc.
• Examples thereof include one or a combination of two or more selected from aromatic alcohols and the like.
• one or more selected from propylene glycol phenyl ether, ethylene glycol monobenzyl ether, ethylene glycol mono n-hexyl ether, 1-phenyl-1-propanol and 2-phenyl-1-propanol The combination of these is preferable, and at least one of propylene glycol phenyl ether and ethylene glycol monobenzyl ether is more preferable.
• ethylene glycol monobenzyl ether ethylene glycol mono n-hexyl ether, 1-methylcyclohexanol, 2-phenyl-1-propanol and 1-phenyl-1-
• propanol are preferable, and one or more combinations selected from ethylene glycol monobenzyl ether, 2-phenyl-1-propanol and 1-phenyl-1-propanol are more preferable.
• the numerical value in parentheses indicates the distance (unit: MPa 0.5 ) between the HSP coordinate of component B and the component coordinate X.
• stamina means that good cleaning properties are ensured even when the cleaning composition is used for a long time (recycle cleaning).
• Component B in the present disclosure preferably has a high boiling point from the viewpoint of fire risk reduction due to ignition and stamina properties.
• the boiling point of Component B is preferably 160 ° C. or higher, more preferably 250 ° C. or higher.
• component B preferably has high water solubility from the viewpoint of concentration.
• the solubility of component B in 100 mL of water is preferably 0.3 g or more.
• the content of Component B when using the cleaning composition according to the present disclosure is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, from the viewpoint of improving the resin mask removability. 1% by mass or more is more preferable, from the viewpoint of stamina, 0.2% by mass or more is more preferable, and from the viewpoint of reducing wastewater treatment load, 3% by mass or less is preferable, and 2% by mass or less is more preferable. Preferably, 1 mass% or less is still more preferable, and 0.5 mass% or less is still more preferable.
• component B consists of two or more organic solvents
• the content of component B refers to the total content thereof.
• the mass ratio (A / B) of component A to component B in the cleaning composition according to the present disclosure is 1 or more and 60 or less, preferably 1.1 or more from the viewpoint of improving the resin mask removability. 2 or more is more preferable, 1.5 or more is still more preferable, 2 or more is more preferable, 3 or more is more preferable, 5 or more is still more preferable, 10 or more is still more preferable, 15 or more is still more preferable, and From the viewpoint of reducing storage stability and wastewater treatment load, it is preferably 50 or less, more preferably 40 or less, still more preferably 30 or less, and even more preferably 20 or less.
• the cleaning composition according to the present disclosure includes water (component C).
• water of component C ion exchange water, RO water, distilled water, pure water, and ultrapure water can be used. What is necessary is just to set content of water suitably according to the usage condition of the cleaning composition which concerns on this indication.
• Content of the component C at the time of use of the cleaning composition which concerns on this indication is 85 mass% or more, and 90 mass% or more is preferable from a viewpoint of a resin mask removability improvement, and 95 mass% or more is more preferable. And from the same viewpoint, 99 mass% or less is preferable, 98 mass% or less is more preferable, 97 mass% or less is still more preferable.
• the cleaning composition according to the present disclosure may contain an optional component as necessary in addition to the components A to C.
• optional components include components that can be used in ordinary cleaning agents, such as chelating agents, thickeners, dispersants, rust inhibitors, basic substances, surfactants, polymer compounds, and solubilization. Agents, antioxidants, antiseptics, antifoaming agents, antibacterial agents and the like.
• the total content of optional components during use of the cleaning composition according to the present disclosure is preferably 0% by mass or more and 2.0% by mass or less, more preferably 0% by mass or more and 1.5% by mass or less, and 0% by mass. The content is more preferably 1.3% by mass or less and still more preferably 0% by mass or more and 1.0% by mass or less.
• the total content of Component B and the organic matter derived from the optional component in the cleaning composition according to the present disclosure is preferably 3% by mass or less, more preferably 2% by mass or less. % Or less is more preferable, 0.5% by mass or less is more preferable, and from the viewpoint of improving resin mask removability, 0.01% by mass or more is preferable, 0.05% by mass or more is more preferable, and 0.1% More preferably, it is more than mass%.
• the cleaning composition according to the present disclosure preferably contains substantially no nitrogen-containing compound and phosphorus-containing compound from the viewpoint of reducing wastewater treatment load and suppressing eutrophication of the drainage area.
• substantially free means that the total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning composition according to the present disclosure is less than 0.1 mass%.
• the total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning composition according to the present disclosure is preferably 0.05% by mass or less from the viewpoint of reducing wastewater treatment load and suppressing eutrophication of the drainage area. 0.01 mass% or less is more preferable, and 0 mass% is still more preferable.
• nitrogen-containing compound examples include nitrogen-containing compounds that have been widely used as a cleaning composition, and examples thereof include at least one or a combination of two or more selected from amines and salts thereof, ammonia, and ammonium salts.
• amine examples include amino alcohols such as monoethanolamine and diethanolamine.
• ammonium salt examples include quaternary ammonium salts such as tetramethylammonium hydroxide (TMAH).
• phosphorus-containing compounds include phosphorus-containing compounds that have been widely used in the past as cleaning compositions, such as phosphoric acid and salts thereof, condensed phosphoric acid such as pyrophosphoric acid, polyphosphoric acid, and metaphosphoric acid, and salts thereof. Inorganic phosphoric acid, organic phosphoric acid, and a combination of two or more selected from phosphoric esters.
• the cleaning composition according to the present disclosure can be produced by blending the components A to C and, if necessary, the above-mentioned optional components by a known method.
• the cleaning composition according to the present disclosure can be formed by blending at least the components A to C.
• the present disclosure relates to a method for producing a cleaning composition comprising a step of blending at least the components A to C.
• “compounding” includes mixing the components A to C and other components as necessary at the same time or in any order.
• the preferable blending amount of each component may be the same as the preferable content of each component of the cleaning composition according to the present disclosure described above.
• the pH at the time of use of the cleaning composition according to the present disclosure is preferably 10.0 or more, more preferably 10.5 or more from the viewpoint of improving the resin mask removability, and 14 or less from the viewpoint of suppressing metal corrosion. Is preferable, 13.9 or less is more preferable, and 13.7 or less is still more preferable.
• the pH is the pH of the cleaning composition at 25 ° C., and can be measured using, for example, a pH meter (A Denki Kogyo Co., Ltd., HM-30G).
• the pH is adjusted with inorganic acids such as nitric acid and sulfuric acid; organic acids such as oxycarboxylic acid, polyvalent carboxylic acid, aminopolycarboxylic acid and amino acid; and metal salts, ammonium salts, ammonia, amines and the like thereof. It can adjust by mix
• the cleaning composition according to the present disclosure may be prepared as a concentrate in which the amount of water of component C is reduced within a range that does not impair storage stability by causing separation or precipitation.
• the concentrate of the cleaning composition is preferably a concentrate having a dilution ratio of 3 times or more from the viewpoint of transportation and storage, and is preferably a concentrate having a dilution ratio of 10 times or less from the viewpoint of storage stability. .
• the concentrate of the cleaning composition can be used by diluting with water so that the components A to C have the above-described content (that is, the content at the time of cleaning) at the time of use.
• the concentrate of a cleaning composition can also be used by adding each component separately at the time of use.
• “when using” or “when cleaning” the cleaning composition of the concentrated solution refers to a state in which the concentrate of the cleaning composition is diluted.
• the content of the component A in the cleaning composition concentrate is preferably 1% by mass or more from the viewpoint of improving the resin mask removability, and is 2% by mass.
• the above is more preferable, 5% by mass or more is further preferable, 10% by mass or more is more preferable, and 40% by mass or less is preferable, and 30% by mass or less is more preferable from the viewpoint of metal corrosion inhibition and storage stability. 20 mass% or less is still more preferable, and 10 mass% or less is still more preferable.
• the content of Component B in the cleaning composition concentrate is preferably 0.1% by mass or more from the viewpoint of improving resin mask removability. .2% by mass or more is more preferable, 0.5% by mass or more is more preferable, 1% by mass or more is more preferable, and 10% by mass or less is preferable from the viewpoint of reducing storage stability and wastewater treatment load. 5 mass% or less is more preferable, 2 mass% or less is still more preferable, and 1.5 mass% or less is still more preferable.
• the content of the component C in the cleaning composition concentrate is 50 mass from the viewpoint of improving the resin mask removability and stabilizing the cleaning composition.
• % Or more preferably 60% by weight or more, more preferably 70% by weight or more, and from the same viewpoint, 95% by weight or less is preferable, 90% by weight or less is more preferable, and 85% by weight or less is more preferable.
• the pH of the concentrate of the cleaning composition according to the present disclosure is preferably 10.0 or more, more preferably 10.5 or more, from the viewpoint of improving the removability of the resin mask after dilution, and during storage and handling. From the viewpoint of safety, 14 or less is preferable.
• the cleaning composition according to the present disclosure can be used for cleaning an object to be cleaned to which a resin mask is attached.
• the objects to be cleaned include electronic components and production intermediates thereof.
• the electronic component include at least one component selected from metal plates such as a printed board, a wafer, a copper plate, and an aluminum plate.
• the said manufacturing intermediate is an intermediate product in the manufacturing process of an electronic component, Comprising: The intermediate product after a resin mask process is included.
• the object to be cleaned to which the resin mask is attached for example, by performing a process such as soldering using a resin mask or a plating process (copper plating, aluminum plating, nickel plating, etc.), wiring or Examples thereof include an electronic component having a connection terminal or the like formed on the surface of the substrate.
• the cleaning composition according to the present disclosure is suitable for cleaning an object to be cleaned to which a resin mask or a plating and / or heat-treated resin mask is attached in terms of cleaning effect.
• the resin mask may be, for example, a negative type resin mask or a positive type resin mask, and a negative type resin mask is preferable from the viewpoint that the effects of the present disclosure are easily exhibited.
• the negative type resin mask include negative dry film resists that have been exposed and / or developed.
• the negative type resin mask is formed using a negative type resist, and examples thereof include a negative type resist layer that has been exposed and / or developed.
• the positive resin mask is formed using a positive resist, and examples thereof include a positive resist layer that has been exposed and / or developed.
• the present disclosure relates to a method for removing a resin mask, which includes contacting an object to be cleaned to which the resin mask is attached with the cleaning composition according to the present disclosure (hereinafter, also referred to as a removal method according to the present disclosure).
• the removal method according to the present disclosure includes a step of cleaning an object to be cleaned to which a resin mask is attached with the cleaning composition according to the present disclosure. Examples of the objects to be cleaned include the objects to be cleaned described above.
• Examples of a method of bringing the cleaning composition according to the present disclosure into contact with an object to be cleaned or a method of cleaning the object to be cleaned with the cleaning composition according to the present disclosure include, for example, in a cleaning bath containing the cleaning composition Examples include a method of contacting by dipping, a method of injecting a cleaning composition into a spray form (shower method), an ultrasonic cleaning method of irradiating ultrasonically during immersion, and the like.
• the cleaning composition according to the present disclosure can be used for cleaning as it is without being diluted.
• the removal method according to the present disclosure preferably includes a step of bringing a cleaning object into contact with the cleaning composition, rinsing with water, and drying.
• the removal method according to the present disclosure it is possible to efficiently remove a resin mask, particularly a resin mask that has been subjected to plating treatment and / or heat treatment.
• the ultrasonic wave has a relatively high frequency.
• the ultrasonic irradiation conditions are preferably 26 to 72 kHz and 80 to 1500 W, and more preferably 36 to 72 kHz and 80 to 1500 W.
• the manufacturing method of the electronic component which concerns on this indication includes the process of wash
• the objects to be cleaned include the objects to be cleaned described above.
• the method for manufacturing an electronic component according to the present disclosure can effectively remove the resin mask attached to the electronic component while performing the cleaning using the cleaning composition according to the present disclosure while suppressing corrosion of the metal. This makes it possible to manufacture highly reliable electronic components. Furthermore, by performing the removal method according to the present disclosure, it becomes easy to remove the resin mask attached to the electronic component, so that the cleaning time can be shortened and the manufacturing efficiency of the electronic component can be improved.
• the present disclosure is a kit for use in any one of the removal method according to the present disclosure and the method for manufacturing an electronic component according to the present disclosure, and includes the components A to C constituting the cleaning composition according to the present disclosure.
• the present invention relates to a kit containing at least one of the components in a state where it is not mixed with other components. According to the kit according to the present disclosure, it is possible to obtain a cleaning composition having excellent resin mask removability and a small wastewater treatment load.
• the kit according to the present disclosure includes, for example, a solution containing the component A (first liquid) and a solution containing the component B (second liquid) in a state where they are not mixed with each other. At least one of the two liquids further contains a component C, and a kit (two-component detergent composition) in which the first liquid and the second liquid are mixed at the time of use can be mentioned.
• a kit two-component detergent composition in which the first liquid and the second liquid are mixed at the time of use can be mentioned.
• Each of the first liquid and the second liquid may contain the above-described optional components as necessary.
• the present disclosure further relates to the following detergent composition, removal method, and production method.
• ⁇ 1> Contains an inorganic alkali (component A), an organic solvent (component B) and water (component C),
• the content of Component C when using the cleaning composition is 85% by mass or more,
• the cleaning composition for resin mask peeling whose mass ratio (A / B) of the component A with respect to the component B is 1-60.
• Component B is propylene glycol phenyl ether, ethylene glycol monobenzyl ether, ethylene glycol mono n-hexyl ether, 1-methylcyclohexanol, 3-methylcyclohexanol, 4-methylcyclohexanol, 1-phenyl-1-
• the cleaning composition according to ⁇ 1> which is one or a combination of two or more selected from propanol and 2-phenyl-1-propanol.
• the content of the component A at the time of use of the cleaning composition is 0.1% by mass or more and 15% by mass or less
• the cleaning composition according to ⁇ 1> or ⁇ 2>, wherein the content of component B when the cleaning composition is used is 0.01% by mass or more and 3% by mass or less.
• the content of component A when using the cleaning composition is preferably 0.1% by mass or more, more preferably 0.3% by mass or more, still more preferably 0.5% by mass or more, and 1% by mass.
• the content of component A when using the cleaning composition is preferably 15% by mass or less, more preferably 10% by mass or less, further preferably 7% by mass or less, and further more preferably 5% by mass or less.
• ⁇ 6> The cleaning composition according to any one of ⁇ 1> to ⁇ 5>, wherein the boiling point of component B is preferably 160 ° C. or higher, and more preferably 250 ° C. or higher.
• ⁇ 7> The cleaning composition according to any one of ⁇ 1> to ⁇ 6>, wherein the solubility of Component B in 100 mL of water is 0.3 g or more.
• the content of Component B during use of the cleaning composition is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, still more preferably 0.1% by mass or more, and 0.2%
• the content of Component B during use of the cleaning composition is preferably 3% by mass or less, more preferably 2% by mass or less, still more preferably 1% by mass or less, and even more preferably 0.5% by mass or less.
• the cleaning composition according to any one of ⁇ 1> to ⁇ 8> is 0.01% by mass or more, more preferably 0.05% by mass or more, still more preferably 0.1% by mass or more, and 0.2%
• the cleaning composition according to any one of ⁇ 1> to ⁇ 8> is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, still more preferably 0.1% by mass or more, and 0.2%
• the mass ratio (A / B) of component A to component B in the cleaning composition is 1 or more and 60 or less, preferably 1.1 or more, more preferably 1.2 or more, and 1.5 or more. Is more preferably, 2 or more is still more preferable, 3 or more is more preferable, 5 or more is still more preferable, 10 or more is still more preferable, and 15 or more is still more preferable, ⁇ 1> to ⁇ 9>
• the mass ratio (A / B) of component A to component B in the cleaning composition is preferably 50 or less, more preferably 40 or less, still more preferably 30 or less, and even more preferably 20 or less, ⁇ 1> To ⁇ 10>.
• the content of Component C during use of the cleaning composition is preferably 99% by mass or less, more preferably 98% by mass or less, and even more preferably 97% by mass or less, any one of ⁇ 1> to ⁇ 12>
• the total content of optional components during use of the cleaning composition is preferably 0% by mass or more and 2.0% by mass or less, more preferably 0% by mass or more and 1.5% by mass or less, and more preferably 0% by mass or more.
• the cleaning composition according to any one of ⁇ 1> to ⁇ 13> which is more preferably 1.3% by mass or less, and still more preferably 0% by mass or more and 1.0% by mass or less.
• the total content of organic substances in the cleaning composition is preferably 3% by mass or less, more preferably 2% by mass or less, still more preferably 1% by mass or less, and even more preferably 0.5% by mass or less.
• the total content of organic substances in the cleaning composition is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and further preferably 0.1% by mass or more, from ⁇ 1> to ⁇
• the cleaning composition according to any one of 15> is more preferably 1.3% by mass or less, and still more preferably 0% by mass or more and 1.0% by mass or less.
• the total content of organic substances in the cleaning composition is preferably 3% by mass or less, more preferably 2% by mass or less, still more preferably
• the cleaning composition according to any one of ⁇ 1> to ⁇ 16> which is substantially free of a nitrogen-containing compound and a phosphorus-containing compound.
• the total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning composition is less than 0.1 mass%, preferably 0.05 mass% or less, more preferably 0.01 mass% or less,
• the cleaning composition according to any one of ⁇ 1> to ⁇ 18>, wherein the pH during use of the cleaning composition is preferably 10.0 or more, and more preferably 10.5 or more.
• the pH in use of the cleaning composition is preferably 14 or less, more preferably 13.9 or less, and even more preferably 13.7 or less, the cleaning agent according to any one of ⁇ 1> to ⁇ 19> Composition.
• the content of component A in the concentrate of the detergent composition is preferably 1% by mass or more, more preferably 2% by mass or more, and more preferably 5% by mass or more.
• the content of component A in the concentrate of the detergent composition is preferably 40% by mass or less, more preferably 30% by mass or less, and 20% by mass or less.
• the content of Component B in the concentrate of the detergent composition is preferably 0.1% by mass or more, more preferably 0.2% by mass or more, and 0
• the content of component B in the concentrate of the detergent composition is preferably 10% by mass or less, more preferably 5% by mass or less, and more preferably 2% by mass or less.
• the content of component C in the concentrate of the detergent composition is preferably 50% by mass or more, more preferably 60% by mass or more, and 70% by mass or more.
• the content of component C in the concentrate of the detergent composition is preferably 95% by mass or less, more preferably 90% by mass or less, and 85% by mass or less.
• the cleaning composition according to any one of ⁇ 1> to ⁇ 25> which is more preferable.
• the pH of the cleaning composition concentrate is preferably 10.0 or more, more preferably 10.5 or more, any one of ⁇ 1> to ⁇ 26> The cleaning composition described in 1.
• the cleaning composition is a concentrate, the cleaning composition according to any one of ⁇ 1> to ⁇ 27>, wherein the pH of the cleaning composition is preferably 14 or less.
• the resin mask is a negative dry film resist subjected to at least one of exposure and development.
• ⁇ 30> A method for removing a resin mask, comprising a step of cleaning an object to be cleaned to which a resin mask is adhered with the cleaning composition according to any one of ⁇ 1> to ⁇ 29>.
• the removal method according to ⁇ 30>, wherein the object to be cleaned is a manufacturing intermediate for electronic components.
• ⁇ 32> A method for manufacturing an electronic component, comprising a step of cleaning an object to be cleaned to which a resin mask is attached with the cleaning composition according to any one of ⁇ 1> or ⁇ 29>.
• ⁇ 33> Use of the cleaning composition according to any one of ⁇ 1> to ⁇ 29> for manufacturing an electronic component.
• a kit comprising at least one of the components A to C constituting the detergent composition in a state where it is not mixed with other components.
• a solution containing component A (first liquid) and a solution containing component B (second liquid) are included in a state where they are not mixed with each other, and at least one of the first liquid and the second liquid is The kit according to ⁇ 34>, further comprising component C, wherein the first liquid and the second liquid are mixed at the time of use.
• ⁇ 36> Use of the cleaning composition according to any one of ⁇ 1> to ⁇ 29> for removing a resin mask from an object to be cleaned.
• ⁇ 37> Use of the cleaning composition according to any one of ⁇ 1> to ⁇ 29> for cleaning an electronic component.
• a photosensitive film for direct imaging (direct drawing) (manufactured by Hitachi Chemical Co., Ltd., Photec RD-1215, negative dry film resist) is applied to the surface of a glass epoxy multilayer substrate (manufactured by Hitachi Chemical Co., Ltd., MCL-E-679FG) as follows. After laminating under conditions, selectively exposing to cure the exposed area (exposure process), developing to remove the unexposed area (developing process), resist pattern (negative pattern of the following three pattern shapes) A substrate having a resin mask) was obtained. And the test piece (4 cm x 4.5 cm) was obtained by carrying out the copper plating process to the area
• Examples 27 to 29 and Comparative Examples 20 to 22 Add 10 kg of each of the detergent compositions of Examples 27 to 29 and Comparative Examples 20 to 22 to a 10 L stainless beaker, heat to 60 ° C., and spray 1 fluid nozzle (full cone) JJXP030 (manufactured by Ikeuchi Co., Ltd.) The test piece is sprayed for 3 minutes (pressure: 0.2 MPa, spray distance: 8 cm) while circulating at a flow rate of 3 L / min with a box type spray washing machine attached as a nozzle. And after immersing and immersing in the rinse tank which added 100g of water to a 100 mL glass beaker, it dries with a nitrogen blow.
• solid peelability indicates the peelability of the resin mask when the resist pattern is solid
• the cleaning compositions of Examples 1 to 29 are comparative examples 1 to 16, which do not contain a predetermined solvent (component B), inorganic alkalis Compared with Comparative Examples 17 to 22 not containing (Component A), the plated resin mask could be removed efficiently. That is, the cleaning compositions of Examples 1 to 29 were excellent in resin mask removability as compared with Comparative Examples 1 to 22.
• the cleaning composition of the present disclosure is useful as a cleaning composition used in the manufacturing process of an electronic component, shortening the cleaning process of the electronic component to which the resin mask is adhered, and the performance of the manufactured electronic component. Reliability can be improved and productivity of the semiconductor device can be improved.

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• 2016
  • 2016-09-09 JP JP2016176651A patent/JP6860276B2/ja active Active
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