WO2018037724A1 - ファブリペロー干渉フィルタ - Google Patents
ファブリペロー干渉フィルタ Download PDFInfo
- Publication number
- WO2018037724A1 WO2018037724A1 PCT/JP2017/024645 JP2017024645W WO2018037724A1 WO 2018037724 A1 WO2018037724 A1 WO 2018037724A1 JP 2017024645 W JP2017024645 W JP 2017024645W WO 2018037724 A1 WO2018037724 A1 WO 2018037724A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- intermediate layer
- substrate
- fabry
- stacked body
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 116
- 239000011800 void material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 320
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 44
- 229920005591 polysilicon Polymers 0.000 description 44
- 229910052581 Si3N4 Inorganic materials 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 24
- 238000013459 approach Methods 0.000 description 19
- 230000005540 biological transmission Effects 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 18
- 238000005530 etching Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 239000012535 impurity Substances 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/284—Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
Definitions
- One embodiment of the present invention relates to a Fabry-Perot interference filter.
- a Fabry-Perot interferometer described in Patent Document 1 includes a substrate, a first mirror structure having a lower fixed mirror disposed on the substrate, and an upper movable mirror facing the lower fixed mirror through a space. And a sacrificial layer that defines a space between the first mirror structure and the second mirror structure.
- the outer surface of the sacrificial layer is exposed.
- the outer surface of the sacrificial layer has a planar shape, is orthogonal to the surface of the sacrificial layer opposite to the first mirror structure, and is flush with the outer surface of the second mirror structure.
- the Fabry-Perot interferometer since the outer surface of the sacrificial layer is exposed, light enters from the outer surface of the sacrificial layer. Even if such light has a wavelength different from the wavelength according to the distance between the lower fixed mirror and the upper movable mirror, the light passes through the lower fixed mirror and is output from the Fabry-Perot interferometer. May be included in light. In this case, noise increases in the output light, and the characteristics of the Fabry-Perot interferometer deteriorate.
- the upper movable mirror moves to the lower fixed mirror side by electrostatic force in a state where the second mirror structure is supported by the sacrificial layer. For this reason, when the upper movable mirror moves to the lower fixed mirror, a force acts on the region supported by the sacrificial layer in the second mirror structure toward the upper movable mirror. Then, due to the reaction of the force, a stress acts on a region that supports the upper movable mirror in the sacrificial layer.
- the outer surface of the sacrificial layer has a planar shape, is orthogonal to the surface of the sacrificial layer opposite to the first mirror structure, and the outer surface of the second mirror structure. It is the same. For this reason, stress tends to concentrate on the corners on the second mirror structure side on the outer surface of the sacrificial layer. As a result, damage such as cracks may occur at the corners.
- an object of one embodiment of the present invention is to provide a Fabry-Perot interference filter that can obtain high reliability.
- a Fabry-Perot interference filter includes a substrate having a first surface, a first layer having a first mirror portion disposed on the first surface, and a side opposite to the substrate with respect to the first mirror portion.
- a second layer having a second mirror part facing the first mirror part via a gap, and an intermediate layer defining a gap between the first layer and the second layer, the outer surface of the intermediate layer Is curved so that the edge of the intermediate layer on the substrate side is located on the outer side in the direction parallel to the first surface than the edge of the intermediate layer opposite to the substrate, and the second layer is The outer surface of the intermediate layer is covered.
- the second layer covers the outer surface of the intermediate layer. For this reason, it is possible to suppress an increase in noise in the output light from the Fabry-Perot interference filter due to light entering from the outer surface of the intermediate layer. Therefore, it is possible to suppress the deterioration of the characteristics of the Fabry-Perot interference filter.
- the second layer covers the outer surface of the intermediate layer, when the second mirror part moves to the first mirror part side, the second layer is outside the intermediate layer. A force is applied to the region covering the side surface so as to be directed toward the second mirror portion. Therefore, stress tends to concentrate on the corners on the second layer side on the outer surface of the intermediate layer.
- the outer surface of the intermediate layer is outside in the direction in which the edge of the intermediate layer on the substrate side is parallel to the first surface than the edge of the intermediate layer opposite to the substrate. It is curved to be located in For this reason, stress can be dispersed at the corners on the second layer side on the outer surface of the intermediate layer. Therefore, the occurrence of damage such as cracks at the corners can be suppressed. As described above, according to the Fabry-Perot interference filter, high reliability can be obtained.
- the outer surface of the intermediate layer has a direction in which the edge of the intermediate layer on the substrate side is parallel to the first surface than the edge of the intermediate layer on the side opposite to the substrate It may be curved in a concave shape on the gap side so as to be located outside.
- the angle of the outer surface of the intermediate layer with respect to the first surface becomes smaller in the portion close to the substrate in the outer surface of the intermediate layer as it approaches the substrate in the direction perpendicular to the first surface. Thereby, it can suppress that a 2nd layer peels from the part close
- the outer surface of the intermediate layer is curved such that the closer to the substrate in the direction perpendicular to the first surface, the farther from the gap in the direction parallel to the first surface. Also good.
- the outer surface of the intermediate layer as a whole moves away from the gap in a direction parallel to the first surface as it approaches the substrate in a direction perpendicular to the first surface.
- the stress can be further dispersed at the corners on the second layer side on the outer surface of the intermediate layer.
- the outer surface of the first layer is located more outward than the outer surface of the intermediate layer in the direction parallel to the first surface, and the second layer includes the first layer
- the outer surface of the layer may be coated.
- the second layer covers the outer surface of the first layer beyond the outer surface of the intermediate layer, and is fixed to the outer surface of the first layer. Therefore, it can suppress that a 2nd layer peels from the part close
- the substrate has an outer edge portion located outside the outer edge of the first layer when viewed from a direction perpendicular to the first surface, and the second layer has the outer edge.
- the part may be covered.
- the second layer covers the outer edge of the substrate beyond the outer edge of the first layer, thereby fixing the first layer to the substrate side. Therefore, it can suppress that a 1st layer peels from a board
- the outer surface of the first layer is curved such that the closer to the substrate in the direction perpendicular to the first surface, the farther from the gap in the direction parallel to the first surface. May be.
- the second layer is more firmly fixed to the outer surface of the first layer. Therefore, it can suppress more reliably that a 2nd layer peels from the part close
- the Fabry-Perot interference filter according to one aspect of the present invention may further include a third layer disposed on a second surface of the substrate facing the first surface.
- the stress due to the mismatch of the layer configuration between the first surface side and the second surface side of the substrate can be reduced, so that the stress concentration in the intermediate layer can be further suppressed.
- FIG. 1 is a plan view of a Fabry-Perot interference filter according to an embodiment of the present invention.
- FIG. 2 is a bottom view of the Fabry-Perot interference filter of FIG.
- FIG. 3 is a cross-sectional view of the Fabry-Perot interference filter taken along line III-III in FIG.
- FIG. 4 is an enlarged cross-sectional view of a first terminal portion of the Fabry-Perot interference filter of FIG.
- FIG. 5 is an enlarged cross-sectional view of a second terminal portion of the Fabry-Perot interference filter of FIG.
- FIG. 6 is an enlarged cross-sectional view of an outer edge portion of the Fabry-Perot interference filter of FIG.
- FIG. 1 is a plan view of a Fabry-Perot interference filter according to an embodiment of the present invention.
- FIG. 2 is a bottom view of the Fabry-Perot interference filter of FIG.
- FIG. 3 is a cross-sectional
- FIG. 7 is a diagram for explaining a manufacturing method of the Fabry-Perot interference filter of FIG.
- FIG. 8 is a diagram for explaining a method of manufacturing the Fabry-Perot interference filter of FIG.
- FIG. 9 is a diagram for explaining a method of manufacturing the Fabry-Perot interference filter of FIG.
- FIG. 10 is a diagram for explaining a method of manufacturing the Fabry-Perot interference filter of FIG.
- FIG. 13 is a diagram for explaining a manufacturing method of a Fabry-Perot interference filter according to a modification.
- FIG. 13 is a diagram for explaining a manufacturing method of a Fabry-Perot interference filter according to a modification.
- FIG. 14 is a diagram for explaining a manufacturing method of a Fabry-Perot interference filter according to a modification.
- FIG. 15 is a diagram for explaining a manufacturing method of a Fabry-Perot interference filter according to a modification.
- FIG. 16 is a diagram for explaining a manufacturing method of a Fabry-Perot interference filter according to a modification.
- FIG. 17 is a diagram for explaining a manufacturing method of a Fabry-Perot interference filter according to a modification.
- FIG. 18 is a diagram for explaining a manufacturing method of a Fabry-Perot interference filter according to a modification.
- FIG. 19 is a diagram for explaining a manufacturing method of a Fabry-Perot interference filter according to a modification.
- FIG. 15 is a diagram for explaining a manufacturing method of a Fabry-Perot interference filter according to a modification.
- FIG. 16 is a diagram for explaining a manufacturing method of a Fabry-Perot
- FIG. 20 is a diagram for explaining a manufacturing method of a Fabry-Perot interference filter according to a modification.
- FIG. 21 is an enlarged cross-sectional view of an outer edge portion of a modified Fabry-Perot interference filter.
- FIG. 22 is an enlarged cross-sectional view of an outer edge portion of a modified Fabry-Perot interference filter.
- FIG. 23 is an enlarged cross-sectional view of an outer edge portion of a modified Fabry-Perot interference filter.
- FIG. 24 is an enlarged cross-sectional view of an outer edge portion of a modified Fabry-Perot interference filter.
- the Fabry-Perot interference filter 1 includes a substrate 11.
- the substrate 11 has a first surface 11a and a second surface 11b facing the first surface 11a.
- an antireflection layer 21 On the first surface 11a, an antireflection layer 21, a first laminated body (first layer) 22, an intermediate layer 23, and a second laminated body (second layer) 24 are laminated in this order.
- a gap (air gap) S is defined between the first stacked body 22 and the second stacked body 24 by a frame-shaped intermediate layer 23.
- a first terminal 15 and a second terminal 16 are provided on the first surface 11 a side of the Fabry-Perot interference filter 1.
- the direction from the opposite side of the gap S to the gap S side with respect to the frame-shaped intermediate layer 23 is referred to as “inside”.
- a direction from the gap S side toward the opposite side of the gap S with respect to the frame-shaped intermediate layer 23 is referred to as “outside”.
- the shape and positional relationship of each part when viewed from a direction perpendicular to the first surface 11a are as follows.
- the outer edge of the substrate 11 has a rectangular shape, for example.
- the outer edge of the substrate 11 and the outer edge of the second stacked body 24 coincide with each other.
- the outer edge of the antireflection layer 21 and the outer edge of the first stacked body 22 coincide with each other.
- the outer edge of the antireflection layer 21 and the outer edge of the first stacked body 22 are located on the outer side with respect to the central portion of the gap S than the outer edge of the intermediate layer 23.
- the substrate 11 has an outer edge portion 11 c located outside the outer edge of the first stacked body 22.
- the outer edge portion 11c has, for example, a frame shape and surrounds the first stacked body 22 when viewed from a direction perpendicular to the first surface 11a.
- the Fabry-Perot interference filter 1 transmits light having a predetermined wavelength in a light transmission region 1a defined at the center thereof.
- the light transmission region 1a is, for example, a cylindrical region.
- the substrate 11 is made of, for example, silicon, quartz, or glass.
- the antireflection layer 21 and the intermediate layer 23 are made of, for example, silicon oxide.
- the thickness of the intermediate layer 23 is, for example, several tens nm to several tens ⁇ m.
- the portion corresponding to the light transmission region 1 a in the first stacked body 22 functions as the first mirror unit 31.
- the first mirror part 31 is disposed on the first surface 11 a via the antireflection layer 21.
- the first stacked body 22 is configured by alternately stacking a plurality of polysilicon layers 25 and a plurality of silicon nitride layers 26 one by one.
- the polysilicon layer 25a, the silicon nitride layer 26a, the polysilicon layer 25b, the silicon nitride layer 26b, and the polysilicon layer 25c are laminated on the antireflection layer 21 in this order.
- the optical thicknesses of the polysilicon layer 25 and the silicon nitride layer 26 constituting the first mirror part 31 are preferably an integral multiple of 1/4 of the central transmission wavelength.
- the 1st mirror part 31 may be arrange
- the portion of the second stacked body 24 corresponding to the light transmission region 1 a functions as the second mirror unit 32.
- the second mirror part 32 faces the first mirror part 31 with a gap S on the side opposite to the substrate 11 with respect to the first mirror part 31.
- the second mirror portion 32 is disposed on the first surface 11 a via the antireflection layer 21, the first stacked body 22, and the intermediate layer 23.
- the second stacked body 24 is configured by alternately stacking a plurality of polysilicon layers 27 and a plurality of silicon nitride layers 28 one by one.
- the polysilicon layer 27a, the silicon nitride layer 28a, the polysilicon layer 27b, the silicon nitride layer 28b, and the polysilicon layer 27c are stacked on the intermediate layer 23 in this order.
- the optical thicknesses of the polysilicon layer 27 and the silicon nitride layer 28 constituting the second mirror part 32 are preferably an integral multiple of 1/4 of the central transmission wavelength.
- a silicon oxide layer may be used instead of the silicon nitride layer.
- the material of each layer constituting the first laminate 22 and the second laminate 24 includes titanium oxide, tantalum oxide, zirconium oxide, magnesium fluoride, aluminum oxide, calcium fluoride, silicon, germanium, zinc sulfide, and the like. May be used.
- a plurality of through holes 24 b extending from the surface 24 a on the side opposite to the intermediate layer 23 of the second laminate 24 to the gap S are formed in the portion corresponding to the gap S in the second laminate 24.
- the plurality of through holes 24b are formed to such an extent that the function of the second mirror portion 32 is not substantially affected.
- the plurality of through-holes 24b are used to form a void S by removing a part of the intermediate layer 23 by etching.
- the first laminate 22 is provided with the first electrode 12. More specifically, the first electrode 12 is formed on the first mirror portion 31 so as to surround the light transmission region 1a. The first electrode 12 is formed by doping the polysilicon layer 25c with impurities to reduce the resistance. A second electrode 13 is formed on the first mirror portion 31 so as to include the light transmission region 1a. The second electrode 13 is formed by doping the polysilicon layer 25c with impurities to reduce the resistance. The size of the second electrode 13 is preferably a size including the entire light transmission region 1a, but may be substantially the same as the size of the light transmission region 1a.
- the third electrode 14 is provided. More specifically, the third electrode 14 is formed on the second mirror portion 32. The third electrode 14 is opposed to the first electrode 12 and the second electrode 13 with the gap S therebetween. The third electrode 14 is formed by doping the polysilicon layer 27a with an impurity to reduce the resistance.
- first terminals 15 are provided so as to face each other with the light transmission region 1a interposed therebetween.
- Each first terminal 15 is disposed in a through hole extending from the surface 24 a of the second stacked body 24 to the first stacked body 22.
- Each first terminal 15 is electrically connected to the first electrode 12 via a wiring 12a.
- the first terminal 15 is formed of, for example, a metal film such as aluminum or an alloy thereof.
- a pair of second terminals 16 are provided so as to face each other with the light transmission region 1a interposed therebetween.
- Each second terminal 16 is disposed in a through hole extending from the surface 24 a of the second stacked body 24 to the first stacked body 22.
- Each second terminal 16 is electrically connected to the second electrode 13 via the wiring 13a and is also electrically connected to the third electrode 14 via the wiring 14a.
- the second terminal 16 is formed of, for example, a metal film such as aluminum or an alloy thereof. The direction in which the pair of first terminals 15 opposes and the direction in which the pair of second terminals 16 oppose each other.
- a trench 18 is provided on the surface 22 b of the first stacked body 22.
- the trench 18 extends in a ring shape along the inner edge of the first electrode 12.
- the trench 18 electrically insulates the first electrode 12 and a region inside the first electrode 12 (second electrode 13).
- the region in the trench 18 may be an insulating material or a void.
- a trench 19 is provided in the second stacked body 24.
- the trench 19 extends in an annular shape so as to surround the first terminal 15.
- the trench 19 electrically insulates the first terminal 15 and the third electrode 14.
- the region in the trench 19 is a void in the present embodiment, but may be an insulating material.
- a trench 20 is provided on the surface 22 b of the first stacked body 22.
- the trench 20 extends in an annular shape so as to surround the second terminal 16.
- the trench 20 electrically insulates the second terminal 16 and the first electrode 12.
- the trench 20 is configured by the intermediate layer 23 entering the groove 25d formed toward the substrate 11 by removing a part of the polysilicon layer 25c constituting the first stacked body 22. .
- the intermediate layer 23 enters the groove 25d, so that the surface 23a of the intermediate layer 23 forms a groove 23c toward the substrate 11 in a region corresponding to the groove 25d.
- the surface 24a of the 2nd laminated body 24 forms the groove part 24c toward the board
- the 2nd laminated body 24 is fixed with respect to the surface 23a of the intermediate
- middle layer 23 is suppressed.
- the trench 20 is formed in a groove formed toward the substrate 11 by removing a part of the silicon nitride layer 26b in addition to a part of the polysilicon layer 25c constituting the first stacked body 22.
- the layer 23 may be formed by entering.
- the intermediate layer 23 includes a first inner side surface 23 d formed so as to surround the first terminal 15 and a second inner side surface 23 e formed so as to surround the second terminal 16. And an outer surface 23b that constitutes the outer edge of the intermediate layer 23.
- the first inner side surface 23 d is such that the edge 23 g of the intermediate layer 23 on the substrate 11 side is closer to the first surface 11 a than the edge 23 f of the intermediate layer 23 on the side opposite to the substrate 11. It is curved so as to be positioned on the first terminal 15 side in the parallel direction (that is, a continuous curved surface is formed). That is, when viewed from a direction perpendicular to the first surface 11a, the edge 23f surrounds the edge 23g. More specifically, the first inner side surface 23d is concavely curved on the side opposite to the first terminal 15 in a cross section perpendicular to the first surface 11a.
- the end of the first inner surface 23 d on the first stacked body 22 side is smoothly connected to the surface 22 b of the first stacked body 22.
- the first inner surface 23d shown in FIG. 4 is closer to the first terminal 15 in a direction parallel to the first surface 11a as it gets closer to the substrate 11 in the direction perpendicular to the first surface 11a. 15 is concavely curved on the opposite side. In other words, in the first inner side surface 23d shown in FIG. 4, the angle of the first inner side surface 23d with respect to the first surface 11a becomes smaller as it approaches the substrate 11 in the direction perpendicular to the first surface 11a.
- the second inner side surface 23e is such that the edge 23i of the intermediate layer 23 on the substrate 11 side is closer to the first surface 11a than the edge 23h of the intermediate layer 23 opposite to the substrate 11 is. It is curved so as to be positioned on the second terminal 16 side in the parallel direction (that is, a continuous curved surface is formed). That is, when viewed from a direction perpendicular to the first surface 11a, the edge 23h surrounds the edge 23i. More specifically, the second inner side surface 23e is curved in a concave shape on the opposite side to the second terminal 16 in a cross section perpendicular to the first surface 11a.
- the end of the second inner surface 23 e on the first stacked body 22 side is smoothly connected to the surface 22 b of the first stacked body 22.
- the second inner side surface 23e shown in FIG. 5 approaches the second terminal 16 so that the closer to the substrate 11 in the direction perpendicular to the first surface 11a, the closer to the second terminal 16 in the direction parallel to the first surface 11a. 16 is concavely curved on the opposite side.
- the angle of the second inner side surface 23e with respect to the first surface 11a becomes smaller as it approaches the substrate 11 in the direction perpendicular to the first surface 11a.
- the outer surface 23 b is such that the edge 23 k of the intermediate layer 23 on the substrate 11 side is parallel to the first surface 11 a than the edge 23 j of the intermediate layer 23 on the side opposite to the substrate 11. It is curved so as to be located outside in the direction (that is, a continuous curved surface is formed). That is, when viewed from a direction perpendicular to the first surface 11a, the edge 23k surrounds the edge 23j. More specifically, the outer surface 23b is concavely curved toward the space S in a cross section perpendicular to the first surface 11a. The end of the outer side surface 23b on the first stacked body 22 side is smoothly connected to the surface 22b or the outer surface 22a of the first stacked body 22.
- the outer side surface 23b shown in FIG. 6 is concavely curved toward the gap S so that the closer to the substrate 11 in the direction perpendicular to the first surface 11a, the farther from the gap S in the direction parallel to the first surface 11a. is doing.
- the angle of the outer side surface 23b with respect to the first surface 11a becomes smaller as it approaches the substrate 11 in the direction perpendicular to the first surface 11a.
- the first stacked body 22 has an outer surface 22 a that constitutes the outer edge of the first stacked body 22.
- the outer side surface 22a of the first stacked body 22 is located outside the outer side surface 23b of the intermediate layer 23 in the direction parallel to the first surface 11a with respect to the central portion of the gap S.
- the outer side surface 22a of the first stacked body 22 is curved so as to move away from the gap S in a direction parallel to the first surface 11a as it approaches the substrate 11 in a direction perpendicular to the first surface 11a (that is, continuous).
- a curved surface). More specifically, the outer side surface 22a of the first stacked body 22 is curved in a convex shape on the side opposite to the gap S in a direction parallel to the first surface 11a.
- the angle of the outer surface 22a of the first stacked body 22 with respect to the first surface 11a increases as the distance from the substrate 11 approaches the substrate 11 in the direction perpendicular to the first surface 11a.
- the second stacked body 24 further includes a first covering portion 33a and a first inner bottom portion 35a.
- the first covering portion 33a and the first inner bottom portion 35a have the same laminated structure as the second mirror portion 32 (see FIG. 3) and are integrally formed so as to be continuous with each other.
- the first covering portion 33 a covers the surface 23 a opposite to the substrate 11 of the intermediate layer 23 and the first inner side surface 23 d and reaches the first stacked body 22.
- the first inner bottom portion 35a is formed on the first stacked body 22 in a region surrounded by the first inner side surface 23d when viewed from a direction perpendicular to the first surface 11a.
- the second stacked body 24 further includes a second covering portion 33b and a second inner bottom portion 35b.
- the second covering portion 33b and the second inner bottom portion 35b have the same layer structure as a part of the laminated structure of the second mirror portion 32 (see FIG. 3) and are integrally formed so as to be continuous with each other. .
- the second covering portion 33 b covers the surface 23 a on the opposite side of the intermediate layer 23 from the substrate 11 and the second inner side surface 23 e, and reaches the first stacked body 22.
- the second inner bottom portion 35b is formed on the first stacked body 22 in a region surrounded by the second inner side surface 23e when viewed from a direction perpendicular to the first surface 11a.
- the second stacked body 24 further includes a third covering portion 33 c and a peripheral edge portion 34.
- the third covering portion 33c and the peripheral edge portion 34 are integrally formed so as to have the same laminated structure as the second mirror portion 32 (see FIG. 3) and to be continuous with each other.
- the third covering portion 33c surrounds the second mirror portion 32 when viewed from a direction perpendicular to the first surface 11a.
- the third covering portion 33c covers the surface 23a of the intermediate layer 23 opposite to the substrate 11, the outer surface 23b of the intermediate layer 23, the outer surface 22a of the first stacked body 22, and the side surface 21a of the antireflection layer 21. And reaches the first surface 11a. That is, the third covering portion 33 c covers the outer edge of the intermediate layer 23, the outer edge of the first stacked body 22, and the outer edge of the antireflection layer 21.
- the peripheral edge portion 34 surrounds the third covering portion 33c when viewed from a direction perpendicular to the first surface 11a.
- the peripheral edge portion 34 is located on the first surface 11a in the outer edge portion 11c. That is, the peripheral edge portion 34 covers the outer edge portion 11c.
- the outer edge of the peripheral edge 34 coincides with the outer edge of the substrate 11 when viewed from the direction perpendicular to the first surface 11a.
- the peripheral edge portion 34 is thinned along the outer edge of the outer edge portion 11c. That is, the part along the outer edge of the outer edge part 11c in the peripheral part 34 is thinner than the other parts other than the part along the outer edge in the peripheral part 34.
- the peripheral edge portion 34 is thinned by removing a part of the polysilicon layer 27 and the silicon nitride layer 28 constituting the second stacked body 24.
- the peripheral portion 34 includes a non-thinned portion 34a that is continuous with the third covering portion 33c, and a thinned portion 34b that surrounds the non-thinned portion 34a. In the thinned portion 34b, the polysilicon layer 27 and the silicon nitride layer 28 other than the polysilicon layer 27a provided directly on the first surface 11a are removed.
- the height of the surface 34c of the non-thinned portion 34a opposite to the substrate 11 from the first surface 11a is lower than the height of the surface 23a of the intermediate layer 23 from the first surface 11a.
- the height of the surface 34c of the non-thinned portion 34a from the first surface 11a is, for example, 100 nm to 5000 nm.
- the height of the surface 23a of the intermediate layer 23 from the first surface 11a is, for example, 500 nm to 20000 nm, and is higher than the height of the surface 34c of the non-thinned portion 34a from the first surface 11a.
- the width of the thinned portion 34 b (the distance between the outer edge of the non-thinned portion 34 a and the outer edge of the outer edge portion 11 c) is 0.01 times or more the thickness of the substrate 11.
- the width of the thinned portion 34b is, for example, 5 ⁇ m to 400 ⁇ m.
- the thickness of the substrate 11 is, for example, 500 ⁇ m to 800 ⁇ m.
- an antireflection layer 41, a third laminated body (third layer) 42, an intermediate layer (third layer) 43, and a fourth laminated body (third layer) 44 are arranged in this order.
- the antireflection layer 41 and the intermediate layer 43 have the same configuration as the antireflection layer 21 and the intermediate layer 23, respectively.
- the third stacked body 42 and the fourth stacked body 44 have a symmetric stacked structure with the first stacked body 22 and the second stacked body 24, respectively, with respect to the substrate 11.
- the antireflection layer 41, the third stacked body 42, the intermediate layer 43, and the fourth stacked body 44 have a function of suppressing the warpage of the substrate 11.
- the third laminated body 42, the intermediate layer 43, and the fourth laminated body 44 are thinned along the outer edge of the outer edge portion 11c. That is, a portion along the outer edge of the outer edge portion 11c in the third stacked body 42, the intermediate layer 43, and the fourth stacked body 44 is a portion along the outer edge of the third stacked body 42, the intermediate layer 43, and the fourth stacked body 44. Thinner than other parts except.
- the third stacked body 42, the intermediate layer 43, and the fourth stacked body 44 are configured such that the third stacked body 42, the intermediate stacked body 42, and the intermediate stacked layer overlap with the thinned portion 34b when viewed from the direction perpendicular to the first surface 11a. It is thinned by removing all of the layer 43 and the fourth stacked body 44.
- the third stacked body 42, the intermediate layer 43, and the fourth stacked body 44 are provided with an opening 40a so as to include the light transmission region 1a.
- the opening 40a has a diameter substantially the same as the size of the light transmission region 1a.
- the opening 40 a is opened on the light emitting side, and the bottom surface of the opening 40 a reaches the antireflection layer 41.
- a light shielding layer 45 is formed on the light emitting surface of the fourth laminate 44.
- the light shielding layer 45 is made of, for example, aluminum.
- a protective layer 46 is formed on the surface of the light shielding layer 45 and the inner surface of the opening 40a.
- the protective layer 46 covers the outer edges of the third stacked body 42, the intermediate layer 43, the fourth stacked body 44, and the light shielding layer 45, and also covers the antireflection layer 41 on the outer edge portion 11c.
- the protective layer 46 is made of, for example, aluminum oxide. Note that the optical influence of the protective layer 46 can be ignored by setting the thickness of the protective layer 46 to 1 to 100 nm (preferably about 30 nm).
- the Fabry-Perot interference filter 1 configured as described above, when a voltage is applied between the first electrode 12 and the third electrode 14 via the first terminal 15 and the second terminal 16, the voltage is applied. A corresponding electrostatic force is generated between the first electrode 12 and the third electrode 14. Due to the electrostatic force, the second mirror part 32 is attracted to the first mirror part 31 fixed to the substrate 11, and the distance between the first mirror part 31 and the second mirror part 32 is adjusted. Thus, in the Fabry-Perot interference filter 1, the distance between the first mirror unit 31 and the second mirror unit 32 is variable.
- the wavelength of light transmitted through the Fabry-Perot interference filter 1 depends on the distance between the first mirror part 31 and the second mirror part 32 in the light transmission region 1a. Therefore, by adjusting the voltage applied between the first electrode 12 and the third electrode 14, the wavelength of the transmitted light can be appropriately selected.
- the second electrode 13 is at the same potential as the third electrode 14. Therefore, the second electrode 13 functions as a compensation electrode for keeping the first mirror part 31 and the second mirror part 32 flat in the light transmission region 1a.
- the voltage applied to the Fabry-Perot interference filter 1 is changed (that is, the distance between the first mirror unit 31 and the second mirror unit 32 is changed in the Fabry-Perot interference filter 1).
- a photodetector By detecting the light (output light) transmitted through the Fabry-Perot interference filter 1 with a photodetector, a spectral spectrum can be obtained.
- the third covering portion 33c of the second stacked body 24 covers the outer surface 23b of the intermediate layer 23. For this reason, it is possible to suppress an increase in noise in the output light from the Fabry-Perot interference filter 1 due to the incidence of light from the outer surface 23 b of the intermediate layer 23. Therefore, it is possible to suppress the deterioration of the characteristics of the Fabry-Perot interference filter 1.
- the outer surface 23 b of the intermediate layer 23 has the edge 23 k on the substrate 11 side of the intermediate layer 23 more than the edge 23 j on the side opposite to the substrate 11 of the intermediate layer 23.
- the contact area between the outer surface 23b of the intermediate layer 23 and the second stacked body 24 is increased as compared with the case where the outer surface 23b of the intermediate layer 23 is not curved. For this reason, the 2nd laminated body 24 can be firmly fixed with respect to the outer surface 23b of the intermediate
- the outer surface 23b of the intermediate layer 23 is curved so as to move away from the gap S in a direction parallel to the first surface 11a as it approaches the substrate 11 in a direction perpendicular to the first surface 11a. For this reason, the thickness (coverage) which the 3rd coating
- the outer surface 23b of the intermediate layer 23 is such that the edge 23k of the intermediate layer 23 on the substrate 11 side is first than the edge 23j on the opposite side of the intermediate layer 23 from the substrate 11. It is concavely curved toward the space S so as to be located outside in the direction parallel to the surface 11a. For this reason, as the angle of the outer surface 23b of the intermediate layer 23 with respect to the first surface 11a approaches the substrate 11 in the direction perpendicular to the first surface 11a in the portion of the outer surface 23b of the intermediate layer 23 close to the substrate 11, Get smaller. Thereby, it can suppress that the 2nd laminated body 24 peels from the part close
- the outer surface 23b of the intermediate layer 23 is curved such that the closer to the substrate 11 in the direction perpendicular to the first surface 11a, the farther from the gap S in the direction parallel to the first surface 11a. is doing. For this reason, the outer side surface 23b of the intermediate layer 23 moves away from the gap S in the direction parallel to the first surface 11a as it approaches the substrate 11 in the direction perpendicular to the first surface 11a. Thereby, stress can be further dispersed at the corners on the second laminate 24 side of the outer side surface 23b of the intermediate layer 23.
- the outer surface 22a of the first stacked body 22 is more outward than the outer surface 23b of the intermediate layer 23 in the direction parallel to the first surface 11a with respect to the central portion of the gap S.
- the third covering portion 33 c of the second stacked body 24 covers the outer surface 22 a of the first stacked body 22. Therefore, the third covering portion 33 c of the second stacked body 24 covers the outer surface 22 a of the first stacked body 22 beyond the outer surface 23 b of the intermediate layer 23, and the outer surface 22 a of the first stacked body 22 is covered. Fixed. Therefore, it can suppress that the 2nd laminated body 24 peels from the part close
- the substrate 11 has an outer edge portion 11c positioned outside the outer edge of the first stacked body 22 when viewed from a direction perpendicular to the first surface 11a, and the second stacked body 24 covers the outer edge portion 11c.
- the 2nd laminated body 24 fixes the 1st laminated body 22 with respect to the board
- the outer surface 22a of the first stacked body 22 becomes farther from the gap S in the direction parallel to the first surface 11a as it approaches the substrate 11 in the direction perpendicular to the first surface 11a. Is curved. For this reason, the 3rd coating
- the Fabry-Perot interference filter 1 further includes a third stacked body 42 disposed on the second surface 11b of the substrate 11 facing the first surface 11a. For this reason, since the stress resulting from the mismatch of the layer configuration between the first surface 11a side and the second surface 11b side of the substrate 11 can be reduced, the stress concentration in the intermediate layer 23 is further suppressed. Can do.
- FIGS. 7 and 10 to 12 the outer surface 22 a of the first stacked body 22, the outer surface 23 b of the intermediate layer 23, and the third covering portion 33 c of the second stacked body 24 are simplified. Yes.
- a wafer 10 including a plurality of portions R corresponding to the substrate 11 is prepared, and the first stacked body 22 having the first mirror portion 31 corresponds to the substrate 11 of the wafer 10.
- Each portion R to be formed is formed (first step).
- the wafer 10 is, for example, a silicon wafer.
- the portions R are arranged in a grid so as to be adjacent to each other, for example.
- a dicing line L is set on the boundary between the portions R.
- the antireflection layer 21 is formed on the first surface 11a of the portion R, and at the same time, the antireflection layer 41 is formed on the second surface 11b of the portion R.
- the polysilicon layer 25a, the silicon nitride layer 26a, the polysilicon layer 25b, the silicon nitride layer 26b, and the polysilicon layer 25c constituting the first stacked body 22 are stacked on the antireflection layer 21 in this order.
- the polysilicon layer and the silicon nitride layer constituting the third stacked body 42 are stacked on the antireflection layer 41.
- the polysilicon layer 25 and the silicon nitride layer 26 are stacked over the first surface 11a, and then the polysilicon layer 25 and the silicon nitride layer 26 are perpendicular to the first surface 11a.
- the portion located on the outer edge portion 11c is removed by etching.
- the polysilicon layers 25 b and 25 c are partially reduced in resistance by impurity doping to form the first electrode 12 and the second electrode 13. Subsequently, a trench 18 is formed by etching.
- the intermediate layer 23 having the removal scheduled portion 50 corresponding to the gap S is formed for each portion R (second step).
- the intermediate layer 23 is formed over the first surface 11 a of the portion R so that the first stacked body 22 is covered with the intermediate layer 23.
- the intermediate layer 43 is formed on the third stacked body 42.
- a portion of the intermediate layer 23 located on the outer edge portion 11c when viewed from a direction perpendicular to the first surface 11a is removed by etching.
- the portion of the antireflection layer 21 located on the outer edge portion 11c when removed from the direction perpendicular to the first surface 11a is removed. Further, during this etching, the first terminal 15, the first covering portion 33a and the first inner bottom portion 35a of FIG. 4, and the second terminal 16, the second covering portion 33b and the second inner bottom portion 35b of FIG. A gap is formed in the corresponding part.
- the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b are curved. More specifically, the first inner surface 23d is closer to the first terminal 15 in the direction parallel to the first surface 11a as it approaches the substrate 11 in the direction perpendicular to the first surface 11a.
- the shape is concavely curved on the opposite side.
- the second inner side surface 23e is opposite to the second terminal 16 so that the closer to the substrate 11 in the direction perpendicular to the first surface 11a, the closer to the second terminal 16 in the direction parallel to the first surface 11a.
- the shape is curved in a concave shape.
- the outer side surface 23b has a shape that is concavely curved toward the gap S so as to move away from the gap S in a direction parallel to the first surface 11a as it approaches the substrate 11 in a direction perpendicular to the first surface 11a.
- FIG. 8A An example of a manufacturing method for forming the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b into a concavely curved shape as described above will be described.
- a resist M is applied over the intermediate layer 23.
- FIG. 8B the resist M in a region corresponding to the region of the intermediate layer 23 to be removed is removed by resist patterning.
- FIG. 9A the intermediate layer 23 is removed by etching (wet etching). At this time, the intermediate layer 23 is removed up to the portion covered with the resist M and has a concave curved shape.
- the antireflection layer 21 and the first stacked body 22 are formed in stages while repeating film formation and etching, and the outer surface 23b of the intermediate layer 23 is continuously (smoothly) formed on the outer surface 22a of the first stacked body 22. ) Etching of the intermediate layer 23 is performed so as to be connected. Thereby, as shown in FIG. 6, the outer surface 23 b of the intermediate layer 23, the outer surface 22 a of the first stacked body 22, and the side surface 21 a of the antireflection layer 21 are continuously curved. Next, as shown in FIG. 9B, the resist M remaining on the intermediate layer 23 is peeled off, whereby the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b having the above-described shapes are formed. Obtainable.
- a first part having a covering part 33a, a second covering part 33b, a third covering part 33c, a peripheral edge part 34 thinned along the outer edge of the outer edge part 11c, and a first inner bottom part 35a and a second inner bottom part 35b.
- Two laminated bodies 24 are formed for each portion R (third step).
- the polysilicon layer 27a, the silicon nitride layer 28a, the polysilicon layer 27b, the silicon nitride layer 28b, and the polysilicon layer 27c constituting the second stacked body 24 are stacked in this order on the intermediate layer 23.
- the second laminate 24 causes the surface 23a, the outer surface 23b, the first inner side surface 23d and the second inner side surface 23e of the intermediate layer 23, and the first laminate.
- the second stacked body 24 is stacked over the first surface 11a of the portion R so that the outer surface 22a of 22 and the side surface 21a of the antireflection layer 21 are covered.
- the polysilicon layer and the silicon nitride layer constituting the fourth stacked body 44 are stacked on the intermediate layer 43. Subsequently, as shown in FIG. 10B, a portion corresponding to the thinned portion 34b of the polysilicon layer 27 and the silicon nitride layer 28 other than the polysilicon layer 27a is removed by etching, whereby the outer edge portion 11c. A thinned peripheral edge 34 is formed along the outer edge. In parallel with the stacking of the second stacked body 24, the polysilicon layer 27a is partially reduced in resistance by impurity doping, and the third electrode 14 is formed. Subsequently, the first terminal 15 and the second terminal 16 are formed.
- the second stacked body 24 is partially etched to form a through hole 24 b extending from the surface 24 a of the second mirror portion 32 to the portion to be removed 50.
- a light shielding layer 45 is formed on the fourth stacked body 44.
- the third stacked body 42, the intermediate layer 43, the fourth stacked body 44, and the light shielding layer 45 are removed by etching so that the portion overlapping the thinned portion 34 b when viewed from the vertical direction is etched.
- the body 42, the intermediate layer 43, and the fourth stacked body 44 are thinned along the outer edge of the outer edge portion 11c.
- an opening 40 a is formed in the third stacked body 42, the intermediate layer 43, the fourth stacked body 44, and the light shielding layer 45 during this etching. Subsequently, a protective layer 46 is formed on the surface of the light shielding layer 45 and the inner surface of the opening 40a.
- the space between the first mirror portion 31 and the second mirror portion 32 is removed by removing the portion to be removed 50 by etching through the through hole 24 b.
- S is formed for each portion R (fourth step).
- the portion to be removed 50 is removed by vapor phase etching through the through hole 24b.
- hydrofluoric acid gas is used for this vapor phase etching.
- the wafer 10 is cut along the outer edge of the outer edge portion 11c in the dicing line L to obtain the Fabry-Perot interference filter 1 (fifth step).
- a modified region is formed inside the wafer 10 along the outer edge of the outer edge portion 11c by irradiation of laser light from the first surface 11a side, and the thickness of the wafer 10 from the modified region is increased. By extending a crack in the direction, the wafer 10 is cut along the outer edge of the outer edge portion 11c.
- the present invention is not limited to the above embodiment.
- the materials and shapes of each component are not limited to the materials and shapes described above, and various materials and shapes can be employed.
- the antireflection layer 21 may be formed in a region outside the outer edge of the first stacked body 22.
- the antireflection layer 21 may be formed without being removed even in a portion corresponding to the peripheral edge portion 34 of the second stacked body 24 (that is, a portion located on the outer edge portion 11c). In that case, the outer edge of the antireflection layer 21 and the outer edge of the substrate 11 may coincide with each other.
- the substrate 11 may not have the outer edge portion 11c.
- the outer surface 22a of the first stacked body 22 may coincide with the outer edge of the substrate 11 when viewed from the direction perpendicular to the first surface 11a.
- the side surface 21 a of the antireflection layer 21 may coincide with the outer edge of the substrate 11 when viewed from a direction perpendicular to the first surface 11 a.
- peripheral part 34 does not need to have the thinned part 34b. That is, the peripheral edge 34 may be formed to have a constant thickness over the entire peripheral edge 34.
- the second laminated body 24 may not have the peripheral edge 34. That is, the 2nd laminated body 24 does not need to be located on the 1st surface 11a.
- the first electrode 12 may not be formed as a part of the first mirror part 31.
- the first electrode 12 may not be formed by doping the polysilicon layer 25c with impurities to reduce the resistance.
- the first electrode 12 may be formed in a region other than the first mirror portion 31 in the first stacked body 22, and in this case, the first electrode 12 may be made of a metal such as aluminum. .
- the second electrode 13 may not be formed as a part of the first mirror part 31.
- the second electrode 13 may not be formed by doping the polysilicon layer 25c with impurities to reduce the resistance.
- the second electrode 13 may be formed in a region other than the first mirror portion 31 in the first stacked body 22, and in this case, the second electrode 13 may be made of a metal such as aluminum. .
- the third electrode 14 may not be formed as a part of the second mirror part 32.
- the third electrode 14 may not be formed by doping the polysilicon layer 27a with an impurity to reduce the resistance.
- the third electrode 14 may be formed in a region other than the second mirror portion 32 in the second stacked body 24.
- the third electrode 14 may be made of a metal such as aluminum. .
- the second inner side surface 23e has a second edge 23i on the substrate 11 side of the intermediate layer 23 in the direction parallel to the first surface 11a than the edge 23h on the opposite side to the substrate 11 of the intermediate layer 23. It may not be curved so as to be located on the terminal 16 side.
- first inner side surface 23d, the second inner side surface 23e, or the outer side surface 23b may not be curved in a concave shape.
- the 2nd laminated body 24 does not need to have the 1st inner bottom part 35a or the 2nd inner bottom part 35b, and does not need to coat
- the manufacturing method for forming the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b into a concavely curved shape is not limited to the above-described method, and the following manufacturing method is used. It may be adopted.
- a resist M is applied over the intermediate layer 23.
- the resist M is exposed and developed using a 3D mask.
- the resist M in the region corresponding to the region of the intermediate layer 23 to be removed is removed, and the side surface of the resist M is curved in a concave shape.
- the intermediate layer 23 is removed by dry etching.
- the concavely curved shape of the side surface of the resist M is transferred to the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b, and becomes a concavely curved shape.
- the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b having the above-described shape are removed by removing the resist M remaining on the intermediate layer 23. Obtainable.
- the following manufacturing method may be adopted.
- a resist M is applied over the intermediate layer 23.
- photolithography is performed on the resist M to remove the resist M in a region corresponding to the region of the intermediate layer 23 to be removed, and the side surface of the resist M. Is a concavely curved shape.
- the conditions of the resist M are adjusted by adjusting the conditions of the resist M (for example, materials) and the photolithography conditions (for example, exposure conditions, development conditions, baking conditions, etc.).
- the side surface can be formed into a concavely curved shape.
- the intermediate layer 23 is removed by dry etching. Thereby, the concavely curved shape of the side surface of the resist M is transferred to the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b, and becomes a concavely curved shape.
- the resist M remaining on the intermediate layer 23 is peeled off, whereby the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b having the above-described shapes are formed. Obtainable.
- the first inner side surface 23d may be curved in a convex shape toward the first terminal 15 side.
- the angle of the first inner side surface 23d with respect to the first surface 11a may increase as it approaches the substrate 11 in a direction perpendicular to the first surface 11a.
- the outer shape of the cross section is an obtuse angle at the corner of the first inner side surface 23d opposite to the first laminate 22. Therefore, the stress acting on the corner of the first inner side surface 23d opposite to the first laminate 22 is further dispersed to further suppress the occurrence of damage such as cracks at the corner. it can.
- the second inner surface 23e may be curved in a convex shape toward the second terminal 16 side.
- the angle of the second inner side surface 23e with respect to the first surface 11a may increase as it approaches the substrate 11 in a direction perpendicular to the first surface 11a.
- the outer shape of the cross section of the second inner side surface 23e is obtuse at the corner opposite to the first stacked body 22. Therefore, the stress acting on the corner of the second inner surface 23e opposite to the first stacked body 22 is further dispersed to further suppress the occurrence of damage such as cracks at the corner. it can.
- the outer surface 23b may be curved in a convex shape on the side opposite to the gap S.
- the angle of the outer side surface 23b with respect to the first surface 11a may increase as it approaches the substrate 11 in a direction perpendicular to the first surface 11a.
- the outer shape of the cross section is an obtuse angle at the corner of the outer surface 23b opposite to the first laminate 22. Therefore, the stress acting on the corner of the outer surface 23b opposite to the first laminate 22 is further dispersed, so that the occurrence of damage such as cracks at the corner can be further suppressed.
- the second step in this case an example of a manufacturing method for making the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b curved into a convex shape as described above will be described.
- a resist M is applied over the intermediate layer 23.
- the resist M in a region corresponding to the region of the intermediate layer 23 to be removed is removed by resist patterning.
- the resist M is cured. Thereby, the side surface of the resist M is formed into a convexly curved shape.
- the intermediate layer 23 is removed by dry etching.
- the intermediate layer 23 is removed to the vicinity of the portion covered with the resist M, and the convex curved shape of the side surface of the resist M is transferred to the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b.
- the shape is curved in a convex shape.
- the resist M remaining on the intermediate layer 23 is peeled off, whereby the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b having the above-described shapes are formed. Obtainable.
- the following manufacturing method may be adopted.
- a resist M is applied over the intermediate layer 23.
- the resist M is exposed and developed using a 3D mask.
- the resist M in the region corresponding to the region of the intermediate layer 23 to be removed is removed, and the side surface of the resist M has a curved shape.
- the intermediate layer 23 is removed by dry etching.
- the intermediate layer 23 is removed up to the portion covered with the resist M, and the convex curved shape of the side surface of the resist M is transferred to the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b.
- the shape is curved in a convex shape.
- the first inner side surface 23d, the second inner side surface 23e, and the outer side surface 23b having the above-described shape are removed by removing the resist M remaining on the intermediate layer 23. Obtainable.
- the outer edge of the antireflection layer 21 and the outer edge of the first laminate 22 do not have to coincide with each other.
- the outer side surface 22a of the 1st laminated body 22 may be comprised by the intermittent surface instead of the continuous surface.
- the side surface 21 a of the antireflection layer 21 may be located on the inner side (light transmission region 1 a side) than the outer surface 22 a of the first stacked body 22.
- the polysilicon layer of the second stacked body 24 is formed in the groove formed by the side surface 21 a of the antireflection layer 21, the surface 22 c of the first stacked body 22 on the substrate 11 side, and the first surface 11 a of the substrate 11. Part of 27a has entered. Thereby, it can suppress that the 2nd laminated body 24 peels.
- the outer edge of the polysilicon layer 25 c of the first stacked body 22 is at least the outer surface of the layer other than the polysilicon layer 25 c among the layers constituting the first stacked body 22. Some may be covered.
- the outer edges of the layers constituting the first stacked body 22 other than the polysilicon layer 25c may have an intermittent shape (for example, a step shape).
- the outer edge of the polysilicon layer 25b and the outer edge of the silicon nitride layer 26b may not coincide with each other.
- the outer surface of the polysilicon layer 25b may be located on the outer side (opposite to the light transmission region 1a) than the outer surface of the silicon nitride layer 26b.
- the outer surface of the layers other than the polysilicon layer 25 c and the side surface 21 a of the antireflection layer 21 among the layers constituting the first stacked body 22 have a planar shape. As it approaches the substrate 11 in the direction perpendicular to the surface 11a, the substrate 11 may be inclined so as to move away from the light transmission region 1a in a direction parallel to the first surface 11a.
- the outer surface of the layer other than the polysilicon layer 25 c and the side surface 21 a of the antireflection layer 21 among the layers constituting the first stacked body 22 have a planar shape. It may be substantially orthogonal to the surface 11a.
- the outer edge of the polysilicon layer 25c may be located inside the outer edge of the silicon nitride layer 26b. Also in this case, since the adhesion area between the third covering portion 33c of the second stacked body 24 and the outer surface 22a of the first stacked body 22 is increased, it is possible to suppress the second stacked body 24 from being peeled off.
- the outer side surface 22a of the first laminated body 22 may be curved in a concave shape toward the space S side.
- the angle of the outer side surface 22a with respect to the first surface 11a may become smaller as it approaches the substrate 11 in the direction perpendicular to the first surface 11a.
- the outer surface 22a may be flat without being curved.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Spectrometry And Color Measurement (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (7)
- 第1表面を有する基板と、
前記第1表面に配置された第1ミラー部を有する第1層と、
前記第1ミラー部に対して前記基板とは反対側において空隙を介して前記第1ミラー部と対向する第2ミラー部を有する第2層と、
前記第1層と前記第2層との間において前記空隙を画定する中間層と、を備え、
前記中間層の外側面は、前記中間層の前記基板側の縁部が、前記中間層の前記基板とは反対側の縁部よりも、前記第1表面に平行な方向において外側に位置するように、湾曲しており、
前記第2層は、前記中間層の前記外側面を被覆している、ファブリペロー干渉フィルタ。 - 前記中間層の前記外側面は、前記中間層の前記基板側の縁部が、前記中間層の前記基板とは反対側の縁部よりも、前記第1表面に平行な方向において外側に位置するように、前記空隙側に凹状に湾曲している、請求項1に記載のファブリペロー干渉フィルタ。
- 前記中間層の外側面は、前記第1表面に垂直な方向において前記基板に近付くほど、前記第1表面に平行な方向において前記空隙から遠ざかるように、湾曲している、請求項1又は2に記載のファブリペロー干渉フィルタ。
- 前記第1層の外側面は、前記中間層の前記外側面よりも、前記第1表面に平行な方向において外側に位置しており、
前記第2層は、前記第1層の前記外側面を被覆している、請求項1~3のいずれか一項に記載のファブリペロー干渉フィルタ。 - 前記基板は、前記第1表面に垂直な方向から見た場合に前記第1層の外縁よりも外側に位置する外縁部を有し、
前記第2層は、前記外縁部を被覆している、請求項4に記載のファブリペロー干渉フィルタ。 - 前記第1層の前記外側面は、前記第1表面に垂直な方向において前記基板に近付くほど、前記第1表面に平行な方向において前記空隙から遠ざかるように、湾曲している、請求項4又は5に記載のファブリペロー干渉フィルタ。
- 前記基板において前記第1表面と対向する第2表面に配置された第3層を更に備える、請求項1~6のいずれか一項に記載のファブリペロー干渉フィルタ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020197004237A KR102508597B1 (ko) | 2016-08-24 | 2017-07-05 | 패브리 페로 간섭 필터 |
JP2018535503A JP6861213B2 (ja) | 2016-08-24 | 2017-07-05 | ファブリペロー干渉フィルタ |
EP17843212.6A EP3505987B1 (en) | 2016-08-24 | 2017-07-05 | Fabry-perot interference filter |
US16/322,170 US10724902B2 (en) | 2016-08-24 | 2017-07-05 | Fabry-Perot interference filter |
CN202410418966.0A CN118091929A (zh) | 2016-08-24 | 2017-07-05 | 法布里-珀罗干涉滤光器 |
CN201780041828.3A CN109477958A (zh) | 2016-08-24 | 2017-07-05 | 法布里-珀罗干涉滤光器 |
FIEP17843212.6T FI3505987T3 (fi) | 2016-08-24 | 2017-07-05 | Fabry-perot-häiriösuodatin |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016-163916 | 2016-08-24 | ||
JP2016163916 | 2016-08-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2018037724A1 true WO2018037724A1 (ja) | 2018-03-01 |
Family
ID=61246602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2017/024645 WO2018037724A1 (ja) | 2016-08-24 | 2017-07-05 | ファブリペロー干渉フィルタ |
Country Status (8)
Country | Link |
---|---|
US (1) | US10724902B2 (ja) |
EP (1) | EP3505987B1 (ja) |
JP (1) | JP6861213B2 (ja) |
KR (1) | KR102508597B1 (ja) |
CN (2) | CN109477958A (ja) |
FI (1) | FI3505987T3 (ja) |
TW (1) | TWI731134B (ja) |
WO (1) | WO2018037724A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6341959B2 (ja) | 2016-05-27 | 2018-06-13 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタの製造方法 |
WO2017204326A1 (ja) | 2016-05-27 | 2017-11-30 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタの製造方法 |
WO2018037724A1 (ja) | 2016-08-24 | 2018-03-01 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタ |
CN113207244A (zh) * | 2020-02-03 | 2021-08-03 | 奥特斯奥地利科技与系统技术有限公司 | 制造部件承载件的方法及部件承载件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007077864A (ja) * | 2005-09-14 | 2007-03-29 | Ricoh Co Ltd | 静電型アクチュエータ、液滴吐出ヘッド、液体カートリッジ、画像形成装置、マイクロポンプ及び光学デバイス |
US20070202628A1 (en) * | 2006-02-24 | 2007-08-30 | Atmel Germany Gmbh | Manufacturing process for integrated piezo elements |
JP2009505162A (ja) * | 2005-08-19 | 2009-02-05 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 応力に起因する変形を最小限に抑えるように構成された支持構造を有するmemsデバイス、およびその製造方法 |
JP2015011311A (ja) * | 2013-07-02 | 2015-01-19 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタ |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1059968A (zh) * | 1990-09-20 | 1992-04-01 | 托木斯克国立库伊比谢瓦大学 | 有选择性的干涉光学滤光系统 |
US5559358A (en) * | 1993-05-25 | 1996-09-24 | Honeywell Inc. | Opto-electro-mechanical device or filter, process for making, and sensors made therefrom |
WO1999034484A2 (en) * | 1997-12-29 | 1999-07-08 | Coretek, Inc. | Microelectromechanically, tunable, confocal, vcsel and fabry-perot filter |
WO2003007049A1 (en) * | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
JP2002174721A (ja) * | 2000-12-06 | 2002-06-21 | Yokogawa Electric Corp | ファブリペローフィルタ |
US6590710B2 (en) * | 2000-02-18 | 2003-07-08 | Yokogawa Electric Corporation | Fabry-Perot filter, wavelength-selective infrared detector and infrared gas analyzer using the filter and detector |
US6436794B1 (en) | 2001-05-21 | 2002-08-20 | Hewlett-Packard Company | Process flow for ARS mover using selenidation wafer bonding before processing a media side of a rotor wafer |
US7429334B2 (en) * | 2004-09-27 | 2008-09-30 | Idc, Llc | Methods of fabricating interferometric modulators by selectively removing a material |
US7405108B2 (en) | 2004-11-20 | 2008-07-29 | International Business Machines Corporation | Methods for forming co-planar wafer-scale chip packages |
JP4587320B2 (ja) * | 2005-06-30 | 2010-11-24 | 株式会社半導体エネルギー研究所 | 微小構造体、マイクロマシン、およびこれらの作製方法 |
US7502401B2 (en) | 2005-07-22 | 2009-03-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | VCSEL system with transverse P/N junction |
WO2007107176A1 (en) * | 2006-03-17 | 2007-09-27 | Freescale Semiconductor, Inc. | Method of reducing risk of delamination of a layer of a semiconductor device |
US7643202B2 (en) * | 2007-05-09 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Microelectromechanical system having a dielectric movable membrane and a mirror |
US20150138642A1 (en) | 2007-08-12 | 2015-05-21 | Toyota Motor Engineering & Manufacturing North America, Inc. | Durable hybrid omnidirectional structural color pigments for exterior applications |
JP2009081428A (ja) | 2007-09-03 | 2009-04-16 | Rohm Co Ltd | 半導体発光素子およびその製造方法 |
US7626707B2 (en) | 2007-10-29 | 2009-12-01 | Symphony Acoustics, Inc. | Dual cavity displacement sensor |
JP5151444B2 (ja) | 2007-12-14 | 2013-02-27 | 株式会社デンソー | 半導体チップ及びその製造方法 |
JP2008103776A (ja) | 2008-01-18 | 2008-05-01 | Seiko Epson Corp | ダイシング方法およびマイクロマシンデバイス |
US20100015782A1 (en) | 2008-07-18 | 2010-01-21 | Chen-Hua Yu | Wafer Dicing Methods |
US9391423B2 (en) | 2008-12-16 | 2016-07-12 | Massachusetts Institute Of Technology | Method and applications of thin-film membrane transfer |
FI125817B (fi) | 2009-01-27 | 2016-02-29 | Teknologian Tutkimuskeskus Vtt Oy | Parannettu sähköisesti säädettävä Fabry-Perot-interferometri, välituote, elektrodijärjestely ja menetelmä sähköisesti säädettävän Fabry-Perot-interferometrin tuottamiseksi |
JP5276035B2 (ja) | 2009-04-13 | 2013-08-28 | 日本電波工業株式会社 | 圧電デバイスの製造方法及び圧電デバイス |
FI124072B (fi) | 2009-05-29 | 2014-03-14 | Valtion Teknillinen | Mikromekaaninen säädettävä Fabry-Perot -interferometri, välituote ja menetelmä niiden valmistamiseksi |
JP5096425B2 (ja) | 2009-07-23 | 2012-12-12 | 日本電波工業株式会社 | 光学フィルタの製造方法 |
FI20095976A0 (fi) | 2009-09-24 | 2009-09-24 | Valtion Teknillinen | Mikromekaanisesti säädettävä Fabry-Perot -interferometri ja menetelmä sen tuottamiseksi |
JP2011181909A (ja) | 2010-02-02 | 2011-09-15 | Mitsubishi Chemicals Corp | 半導体チップ製造方法 |
JP5640549B2 (ja) * | 2010-08-19 | 2014-12-17 | セイコーエプソン株式会社 | 光フィルター、光フィルターの製造方法および光機器 |
FI125897B (fi) | 2011-06-06 | 2016-03-31 | Teknologian Tutkimuskeskus Vtt Oy | Mikromekaanisesti säädettävä Fabry-Perot-interferometri ja menetelmä sen valmistamiseksi |
JP5939752B2 (ja) | 2011-09-01 | 2016-06-22 | 株式会社ディスコ | ウェーハの分割方法 |
JP5966405B2 (ja) * | 2012-02-14 | 2016-08-10 | セイコーエプソン株式会社 | 光学フィルターデバイス、及び光学フィルターデバイスの製造方法 |
US8884725B2 (en) | 2012-04-19 | 2014-11-11 | Qualcomm Mems Technologies, Inc. | In-plane resonator structures for evanescent-mode electromagnetic-wave cavity resonators |
FI125368B (en) | 2012-06-08 | 2015-09-15 | Teknologian Tutkimuskeskus Vtt Oy | Micromechanically tunable Fabry-Perot interferometer system and method for producing this |
JP2014182170A (ja) * | 2013-03-18 | 2014-09-29 | Seiko Epson Corp | 封止構造、干渉フィルター、光学モジュール、及び電子機器 |
JP6211315B2 (ja) | 2013-07-02 | 2017-10-11 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタ |
JP6264810B2 (ja) * | 2013-09-27 | 2018-01-24 | セイコーエプソン株式会社 | 干渉フィルター、光学フィルターデバイス、光学モジュール、及び電子機器 |
JP6196867B2 (ja) * | 2013-10-01 | 2017-09-13 | 浜松ホトニクス株式会社 | 光学モジュール |
US10184832B2 (en) * | 2013-10-31 | 2019-01-22 | Hamamatsu Photonics K.K. | Light-detecting device |
JP6356427B2 (ja) | 2014-02-13 | 2018-07-11 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタ |
JP6353683B2 (ja) | 2014-04-04 | 2018-07-04 | 浜松ホトニクス株式会社 | レーザ加工装置及びレーザ加工方法 |
WO2015195123A1 (en) | 2014-06-18 | 2015-12-23 | Jds Uniphase Corporation | Metal-dielectric optical filter, sensor device, and fabrication method |
JP2016099583A (ja) | 2014-11-26 | 2016-05-30 | セイコーエプソン株式会社 | 干渉フィルター、光学モジュール、電子機器および構造体の製造方法 |
WO2017204326A1 (ja) | 2016-05-27 | 2017-11-30 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタの製造方法 |
US10838195B2 (en) | 2016-08-24 | 2020-11-17 | Hamamatsu Photonics K.K. | Fabry-Perot interference filter |
WO2018037724A1 (ja) | 2016-08-24 | 2018-03-01 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタ |
-
2017
- 2017-07-05 WO PCT/JP2017/024645 patent/WO2018037724A1/ja unknown
- 2017-07-05 JP JP2018535503A patent/JP6861213B2/ja active Active
- 2017-07-05 EP EP17843212.6A patent/EP3505987B1/en active Active
- 2017-07-05 KR KR1020197004237A patent/KR102508597B1/ko active IP Right Grant
- 2017-07-05 FI FIEP17843212.6T patent/FI3505987T3/fi active
- 2017-07-05 CN CN201780041828.3A patent/CN109477958A/zh active Pending
- 2017-07-05 US US16/322,170 patent/US10724902B2/en active Active
- 2017-07-05 CN CN202410418966.0A patent/CN118091929A/zh active Pending
- 2017-08-04 TW TW106126313A patent/TWI731134B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009505162A (ja) * | 2005-08-19 | 2009-02-05 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 応力に起因する変形を最小限に抑えるように構成された支持構造を有するmemsデバイス、およびその製造方法 |
JP2007077864A (ja) * | 2005-09-14 | 2007-03-29 | Ricoh Co Ltd | 静電型アクチュエータ、液滴吐出ヘッド、液体カートリッジ、画像形成装置、マイクロポンプ及び光学デバイス |
US20070202628A1 (en) * | 2006-02-24 | 2007-08-30 | Atmel Germany Gmbh | Manufacturing process for integrated piezo elements |
JP2015011311A (ja) * | 2013-07-02 | 2015-01-19 | 浜松ホトニクス株式会社 | ファブリペロー干渉フィルタ |
Also Published As
Publication number | Publication date |
---|---|
CN118091929A (zh) | 2024-05-28 |
FI3505987T3 (fi) | 2023-12-19 |
TWI731134B (zh) | 2021-06-21 |
KR102508597B1 (ko) | 2023-03-13 |
EP3505987A4 (en) | 2020-04-15 |
CN109477958A (zh) | 2019-03-15 |
EP3505987B1 (en) | 2023-10-11 |
US10724902B2 (en) | 2020-07-28 |
JP6861213B2 (ja) | 2021-04-21 |
KR20190039516A (ko) | 2019-04-12 |
EP3505987A1 (en) | 2019-07-03 |
JPWO2018037724A1 (ja) | 2019-06-20 |
US20190186994A1 (en) | 2019-06-20 |
TW201807439A (zh) | 2018-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2018037725A1 (ja) | ファブリペロー干渉フィルタ | |
WO2018037724A1 (ja) | ファブリペロー干渉フィルタ | |
WO2017204326A1 (ja) | ファブリペロー干渉フィルタの製造方法 | |
JP6368447B1 (ja) | ウェハ構造体 | |
TWI769343B (zh) | 晶圓 | |
JP7374114B2 (ja) | ファブリペロー干渉フィルタ | |
WO2017203947A1 (ja) | ファブリペロー干渉フィルタの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17843212 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2018535503 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20197004237 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 2017843212 Country of ref document: EP Effective date: 20190325 |