WO2018025655A1 - シリコンウェーハ粗研磨用組成物の濃縮液 - Google Patents
シリコンウェーハ粗研磨用組成物の濃縮液 Download PDFInfo
- Publication number
- WO2018025655A1 WO2018025655A1 PCT/JP2017/026405 JP2017026405W WO2018025655A1 WO 2018025655 A1 WO2018025655 A1 WO 2018025655A1 JP 2017026405 W JP2017026405 W JP 2017026405W WO 2018025655 A1 WO2018025655 A1 WO 2018025655A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- water
- less
- weight
- soluble polymer
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 190
- 239000000203 mixture Substances 0.000 title claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- 235000012431 wafers Nutrition 0.000 title claims abstract description 38
- 235000014666 liquid concentrate Nutrition 0.000 title abstract 3
- 229920003169 water-soluble polymer Polymers 0.000 claims abstract description 98
- 150000007514 bases Chemical class 0.000 claims abstract description 27
- 239000006061 abrasive grain Substances 0.000 claims description 93
- 239000007788 liquid Substances 0.000 claims description 86
- 239000012141 concentrate Substances 0.000 claims description 62
- 239000002245 particle Substances 0.000 abstract description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 37
- 238000000034 method Methods 0.000 description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 27
- 238000010790 dilution Methods 0.000 description 24
- 239000012895 dilution Substances 0.000 description 24
- 239000000243 solution Substances 0.000 description 21
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 18
- 229920000642 polymer Polymers 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- 239000002253 acid Substances 0.000 description 15
- 238000007517 polishing process Methods 0.000 description 14
- 239000002002 slurry Substances 0.000 description 14
- 229920002678 cellulose Polymers 0.000 description 13
- 239000001913 cellulose Substances 0.000 description 13
- 150000003839 salts Chemical class 0.000 description 13
- 239000002738 chelating agent Substances 0.000 description 12
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 11
- 239000011164 primary particle Substances 0.000 description 11
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 10
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 10
- 239000003125 aqueous solvent Substances 0.000 description 10
- 238000004140 cleaning Methods 0.000 description 10
- 239000008119 colloidal silica Substances 0.000 description 10
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 9
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 9
- 230000005484 gravity Effects 0.000 description 9
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 125000004433 nitrogen atom Chemical group N* 0.000 description 9
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 229920000881 Modified starch Polymers 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 235000019426 modified starch Nutrition 0.000 description 6
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 5
- 239000007853 buffer solution Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229920001519 homopolymer Polymers 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 229920002451 polyvinyl alcohol Polymers 0.000 description 5
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 4
- 235000017060 Arachis glabrata Nutrition 0.000 description 4
- 241001553178 Arachis glabrata Species 0.000 description 4
- 235000010777 Arachis hypogaea Nutrition 0.000 description 4
- 235000018262 Arachis monticola Nutrition 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 150000001450 anions Chemical class 0.000 description 4
- 229920001400 block copolymer Polymers 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- -1 for example Chemical compound 0.000 description 4
- 238000005342 ion exchange Methods 0.000 description 4
- 235000020232 peanut Nutrition 0.000 description 4
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical class OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000010954 inorganic particle Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000011736 potassium bicarbonate Substances 0.000 description 3
- 235000015497 potassium bicarbonate Nutrition 0.000 description 3
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 3
- 229910000027 potassium carbonate Inorganic materials 0.000 description 3
- 235000011181 potassium carbonates Nutrition 0.000 description 3
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 235000017550 sodium carbonate Nutrition 0.000 description 3
- 239000006228 supernatant Substances 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- QQVDJLLNRSOCEL-UHFFFAOYSA-N (2-aminoethyl)phosphonic acid Chemical compound [NH3+]CCP(O)([O-])=O QQVDJLLNRSOCEL-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 2
- 238000004438 BET method Methods 0.000 description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 229920000463 Poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol) Polymers 0.000 description 2
- 239000004373 Pullulan Substances 0.000 description 2
- 229920001218 Pullulan Polymers 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 239000001099 ammonium carbonate Substances 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 239000011146 organic particle Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 125000005702 oxyalkylene group Chemical group 0.000 description 2
- 229960003330 pentetic acid Drugs 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- 235000019353 potassium silicate Nutrition 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 235000019423 pullulan Nutrition 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 150000004023 quaternary phosphonium compounds Chemical class 0.000 description 2
- 229920005604 random copolymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- SFRLSTJPMFGBDP-UHFFFAOYSA-N 1,2-diphosphonoethylphosphonic acid Chemical compound OP(O)(=O)CC(P(O)(O)=O)P(O)(O)=O SFRLSTJPMFGBDP-UHFFFAOYSA-N 0.000 description 1
- OQZAQBGJENJMHT-UHFFFAOYSA-N 1,3-dibromo-5-methoxybenzene Chemical compound COC1=CC(Br)=CC(Br)=C1 OQZAQBGJENJMHT-UHFFFAOYSA-N 0.000 description 1
- OTIXUSNHAKOJBX-UHFFFAOYSA-N 1-(aziridin-1-yl)ethanone Chemical compound CC(=O)N1CC1 OTIXUSNHAKOJBX-UHFFFAOYSA-N 0.000 description 1
- PVOAHINGSUIXLS-UHFFFAOYSA-N 1-Methylpiperazine Chemical compound CN1CCNCC1 PVOAHINGSUIXLS-UHFFFAOYSA-N 0.000 description 1
- MXYOPVWZZKEAGX-UHFFFAOYSA-N 1-phosphonoethylphosphonic acid Chemical compound OP(=O)(O)C(C)P(O)(O)=O MXYOPVWZZKEAGX-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 1
- KHJWSKNOMFJTDN-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KHJWSKNOMFJTDN-UHFFFAOYSA-N 0.000 description 1
- WKVMOQXBMPYPGK-UHFFFAOYSA-N 2-[bis(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].OC(=O)CN(CC(O)=O)CC(O)=O WKVMOQXBMPYPGK-UHFFFAOYSA-N 0.000 description 1
- OOOLSJAKRPYLSA-UHFFFAOYSA-N 2-ethyl-2-phosphonobutanedioic acid Chemical compound CCC(P(O)(O)=O)(C(O)=O)CC(O)=O OOOLSJAKRPYLSA-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- MYWGVBFSIIZBHJ-UHFFFAOYSA-N 4-phosphonobutane-1,2,3-tricarboxylic acid Chemical compound OC(=O)CC(C(O)=O)C(C(O)=O)CP(O)(O)=O MYWGVBFSIIZBHJ-UHFFFAOYSA-N 0.000 description 1
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- BCZXFFBUYPCTSJ-UHFFFAOYSA-L Calcium propionate Chemical compound [Ca+2].CCC([O-])=O.CCC([O-])=O BCZXFFBUYPCTSJ-UHFFFAOYSA-L 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229910020366 ClO 4 Inorganic materials 0.000 description 1
- 229920000858 Cyclodextrin Polymers 0.000 description 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 229920000896 Ethulose Polymers 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001859 Ethyl hydroxyethyl cellulose Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229920001479 Hydroxyethyl methyl cellulose Polymers 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- MVCMTOJZXPCZNM-UHFFFAOYSA-I [Na+].[Na+].[Na+].[Na+].[Na+].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.NCCNCCN Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.NCCNCCN MVCMTOJZXPCZNM-UHFFFAOYSA-I 0.000 description 1
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 1
- RUSUZAGBORAKPY-UHFFFAOYSA-N acetic acid;n'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCNCCN RUSUZAGBORAKPY-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 1
- WQZGKKKJIJFFOK-DVKNGEFBSA-N alpha-D-glucose Chemical group OC[C@H]1O[C@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-DVKNGEFBSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- IMUDHTPIFIBORV-UHFFFAOYSA-N aminoethylpiperazine Chemical compound NCCN1CCNCC1 IMUDHTPIFIBORV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000012538 ammonium bicarbonate Nutrition 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003429 antifungal agent Substances 0.000 description 1
- 229940121375 antifungal agent Drugs 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- QRTCASNUSVDIEL-UHFFFAOYSA-N azane;2-[bis(carboxymethyl)amino]acetic acid Chemical compound N.OC(=O)CN(CC(O)=O)CC(O)=O QRTCASNUSVDIEL-UHFFFAOYSA-N 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical group OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- VSGNNIFQASZAOI-UHFFFAOYSA-L calcium acetate Chemical compound [Ca+2].CC([O-])=O.CC([O-])=O VSGNNIFQASZAOI-UHFFFAOYSA-L 0.000 description 1
- 239000001639 calcium acetate Substances 0.000 description 1
- 235000011092 calcium acetate Nutrition 0.000 description 1
- 229960005147 calcium acetate Drugs 0.000 description 1
- NKWPZUCBCARRDP-UHFFFAOYSA-L calcium bicarbonate Chemical compound [Ca+2].OC([O-])=O.OC([O-])=O NKWPZUCBCARRDP-UHFFFAOYSA-L 0.000 description 1
- 229910000020 calcium bicarbonate Inorganic materials 0.000 description 1
- 235000010216 calcium carbonate Nutrition 0.000 description 1
- 239000004330 calcium propionate Substances 0.000 description 1
- 235000010331 calcium propionate Nutrition 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 229940011182 cobalt acetate Drugs 0.000 description 1
- QAHREYKOYSIQPH-UHFFFAOYSA-L cobalt(II) acetate Chemical compound [Co+2].CC([O-])=O.CC([O-])=O QAHREYKOYSIQPH-UHFFFAOYSA-L 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- CEJLBZWIKQJOAT-UHFFFAOYSA-N dichloroisocyanuric acid Chemical compound ClN1C(=O)NC(=O)N(Cl)C1=O CEJLBZWIKQJOAT-UHFFFAOYSA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 235000019326 ethyl hydroxyethyl cellulose Nutrition 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- WPPVJSFNBNUTHQ-UHFFFAOYSA-H hexasodium N'-[2-(2-aminoethylamino)ethyl]ethane-1,2-diamine hexaacetate Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[Na+].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O.NCCNCCNCCN WPPVJSFNBNUTHQ-UHFFFAOYSA-H 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- GTTBQSNGUYHPNK-UHFFFAOYSA-N hydroxymethylphosphonic acid Chemical compound OCP(O)(O)=O GTTBQSNGUYHPNK-UHFFFAOYSA-N 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 description 1
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 description 1
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 description 1
- UFVKGYZPFZQRLF-UHFFFAOYSA-N hydroxypropyl methyl cellulose Chemical compound OC1C(O)C(OC)OC(CO)C1OC1C(O)C(O)C(OC2C(C(O)C(OC3C(C(O)C(O)C(CO)O3)O)C(CO)O2)O)C(CO)O1 UFVKGYZPFZQRLF-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 1
- 239000011654 magnesium acetate Substances 0.000 description 1
- 235000011285 magnesium acetate Nutrition 0.000 description 1
- 229940069446 magnesium acetate Drugs 0.000 description 1
- CQQJGTPWCKCEOQ-UHFFFAOYSA-L magnesium dipropionate Chemical compound [Mg+2].CCC([O-])=O.CCC([O-])=O CQQJGTPWCKCEOQ-UHFFFAOYSA-L 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229940071125 manganese acetate Drugs 0.000 description 1
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- DJFBJKSMACBYBD-UHFFFAOYSA-N phosphane;hydrate Chemical group O.P DJFBJKSMACBYBD-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229960005141 piperazine Drugs 0.000 description 1
- 229960003506 piperazine hexahydrate Drugs 0.000 description 1
- AVRVZRUEXIEGMP-UHFFFAOYSA-N piperazine;hexahydrate Chemical compound O.O.O.O.O.O.C1CNCCN1 AVRVZRUEXIEGMP-UHFFFAOYSA-N 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- BWILYWWHXDGKQA-UHFFFAOYSA-M potassium propanoate Chemical compound [K+].CCC([O-])=O BWILYWWHXDGKQA-UHFFFAOYSA-M 0.000 description 1
- 239000004331 potassium propionate Substances 0.000 description 1
- 235000010332 potassium propionate Nutrition 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007127 saponification reaction Methods 0.000 description 1
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- JXKPEJDQGNYQSM-UHFFFAOYSA-M sodium propionate Chemical compound [Na+].CCC([O-])=O JXKPEJDQGNYQSM-UHFFFAOYSA-M 0.000 description 1
- 239000004324 sodium propionate Substances 0.000 description 1
- 235000010334 sodium propionate Nutrition 0.000 description 1
- 229960003212 sodium propionate Drugs 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000005621 tetraalkylammonium salts Chemical class 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- ZOMVKCHODRHQEV-UHFFFAOYSA-M tetraethylphosphanium;hydroxide Chemical compound [OH-].CC[P+](CC)(CC)CC ZOMVKCHODRHQEV-UHFFFAOYSA-M 0.000 description 1
- CRUVUWATNULHFA-UHFFFAOYSA-M tetramethylphosphanium;hydroxide Chemical compound [OH-].C[P+](C)(C)C CRUVUWATNULHFA-UHFFFAOYSA-M 0.000 description 1
- JVOPCCBEQRRLOJ-UHFFFAOYSA-M tetrapentylazanium;hydroxide Chemical compound [OH-].CCCCC[N+](CCCCC)(CCCCC)CCCCC JVOPCCBEQRRLOJ-UHFFFAOYSA-M 0.000 description 1
- RLQWHDODQVOVKU-UHFFFAOYSA-N tetrapotassium;silicate Chemical compound [K+].[K+].[K+].[K+].[O-][Si]([O-])([O-])[O-] RLQWHDODQVOVKU-UHFFFAOYSA-N 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- POWFTOSLLWLEBN-UHFFFAOYSA-N tetrasodium;silicate Chemical compound [Na+].[Na+].[Na+].[Na+].[O-][Si]([O-])([O-])[O-] POWFTOSLLWLEBN-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- USIPWJRLUGPSJM-UHFFFAOYSA-K trisodium 2-(2-aminoethylamino)ethanol triacetate Chemical compound [Na+].[Na+].[Na+].CC([O-])=O.CC([O-])=O.CC([O-])=O.NCCNCCO USIPWJRLUGPSJM-UHFFFAOYSA-K 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- XDWXRAYGALQIFG-UHFFFAOYSA-L zinc;propanoate Chemical compound [Zn+2].CCC([O-])=O.CCC([O-])=O XDWXRAYGALQIFG-UHFFFAOYSA-L 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a concentrate of a composition for rough polishing of silicon wafers.
- the surface of a silicon substrate used for manufacturing a semiconductor product is finished to a high-quality mirror surface through a lapping process and a polishing process.
- the polishing process typically includes a preliminary polishing process and a finishing polishing process.
- the preliminary polishing process is also called a rough polishing process.
- the finish polishing process is also called a finish polishing process.
- This type of polishing composition may be in a concentrated form before being supplied to the object to be polished, from the viewpoint of convenience in manufacturing, distribution, storage, etc. and cost reduction. That is, the polishing composition may be in the form of a concentrated concentrate of polishing liquid.
- the prepared concentrated liquid is diluted with water and used for polishing.
- Patent document 1 is mentioned as a literature which discloses this kind of prior art.
- Patent Document 2 is a document disclosing the radius of inertia of hydroxycellulose used in the polishing composition.
- the present inventors have obtained knowledge that the polishing performance is improved as the water-soluble polymer is added and the inertia radius is larger. .
- the polishing performance here is typically flatness, for example, GBIR (Global Backside Ideal Range).
- GBIR Global Backside Ideal Range
- the inertial radius of the water-soluble polymer is too large, the stability at the stage of the concentrate tends to decrease.
- the concentrated liquid contains components such as abrasive grains and water-soluble polymers at a higher concentration than when used, there is a risk that good stability such as separation and aggregation of the contained components may not be obtained. is there.
- Even in the form of a concentrated solution of high concentration if a polishing composition that is excellent in stability and can exhibit good polishing performance after dilution is provided, it is advantageous in terms of convenience and cost reduction, There are great practical advantages.
- the present invention has been made in view of the above circumstances, and provides a concentrated liquid of a composition for rough polishing of silicon wafers that can exhibit good polishing performance after dilution and has excellent stability.
- the purpose is to do.
- a concentrated liquid for a silicon wafer rough polishing composition comprising abrasive grains, a basic compound and a water-soluble polymer.
- the ratio [rg / d] of the radius of inertia rg [nm] of the water-soluble polymer to the interparticle distance d [nm] of the abrasive grains in the concentrated liquid is 4.7 or less.
- the concentrated liquid having such a configuration exhibits excellent stability and can exhibit good polishing performance after dilution.
- the polishing performance is typically a flatness improving effect.
- the concentrate of the polishing composition disclosed herein contains abrasive grains and a water-soluble polymer.
- the concentrated liquid of the polishing composition may be simply abbreviated as “concentrated liquid”.
- Such a concentrated liquid is characterized by a ratio [rg / d] of the inertia radius rg [nm] of the water-soluble polymer to the interparticle distance d [nm] of the abrasive grains being 4.7 or less.
- a concentrated solution satisfying the above characteristics exhibits excellent stability.
- the reason for this is not particularly limited, but when the ratio [rg / d] is satisfied, the water-soluble polymer is stably present between the abrasive grains in the concentrate. This is presumably because the abrasive particles and the water-soluble polymer, which are the main components of the concentrate, can be stably dispersed in the concentrate. Further, when the concentrated liquid is diluted and used as a polishing liquid, the polishing performance can be exhibited with respect to the substrate to be polished, that is, the silicon wafer, by including the water-soluble polymer. Specifically, the polishing performance is an effect of improving flatness.
- the ratio [rg / d] is preferably 3.8 or less, more preferably 2.8 or less, still more preferably 2.5 or less, and particularly preferably 1.9 or less, from the viewpoint of improving stability.
- the ratio [rg / d] is typically 1.0 or less.
- the lower limit of the above ratio [rg / d] is not particularly limited, and can usually be about 0.3 or more, for example, 0.6 or more, from the viewpoint of the concentration efficiency of the concentrate, polishing performance, and the like.
- the interparticle distance d [nm] of the abrasive grains and the inertial radius rg [nm] of the water-soluble polymer are measured by the method described later.
- the abrasive grains disclosed herein are contained in the concentrated liquid in such a content that the inter-particle distance d [nm] of the abrasive grains satisfies the above ratio [rg / d].
- the interparticle distance d of the abrasive grains is 200 nm or less. According to the technique disclosed here, the inter-particle distance d of the abrasive grains is not more than a predetermined value as described above, and excellent stability can be achieved even when the abrasive grains are relatively close to each other in the concentrated liquid. Can be realized.
- the interparticle distance d is more preferably 150 nm or less, further preferably 100 nm or less, and particularly preferably 80 nm or less from the viewpoint of the concentration efficiency of the concentrate. In a particularly preferred embodiment, the interparticle distance d is typically 70 nm or less. Further, the inter-particle distance d may be, for example, 60 nm or less, further 40 nm or less, within a range that satisfies the ratio [rg / d].
- the inter-particle distance d [nm] of the abrasive grains is assumed to be the closest packed ratio [74%] of the spheres assuming that the abrasive grains contained in the concentrate are uniformly dispersed.
- d [nm] R S ⁇ 2-D1 It is a theoretical value obtained from
- R S is the radius [nm] of a sphere that is centered on one abrasive grain and circumscribes the corresponding sphere of the adjacent abrasive grain
- D1 is the average primary particle diameter [nm] of the abrasive grain. It is.
- the number of abrasive grains contained in a unit volume of concentrated liquid is obtained by dividing the weight [g / L] of abrasive grains per concentrated volume of unit volume, for example, 1 L, by the weight [g] per abrasive grain. Is required.
- the weight of the abrasive grains per unit volume of the concentrate is determined from the content and specific gravity of the abrasive grains in the concentrate and the content and specific gravity of components other than the abrasive grains contained in the concentrate.
- the specific gravity of the abrasive grains is, for example, 2.2 g / cm 3 in the case of silica abrasive grains.
- Components other than the abrasive grains contained in the concentrated liquid usually have an aqueous solvent as a main component.
- the weight [g] per abrasive grain particle is determined from the average primary particle diameter [nm] of the abrasive grain particle and the specific volume of the abrasive grain particle when the primary particle is regarded as a true sphere.
- the material and properties of the abrasive grains contained in the concentrated liquid and the polishing composition diluted with the concentrated liquid are not particularly limited, and can be appropriately selected according to the purpose of use, usage mode, and the like. it can.
- the abrasive grains include inorganic particles, organic particles, and organic-inorganic composite particles.
- the inorganic particles include silica particles, alumina particles, cerium oxide particles, chromium oxide particles, titanium dioxide particles, zirconium oxide particles, magnesium oxide particles, manganese dioxide particles, zinc oxide particles, oxide particles such as bengara particles; Examples thereof include nitride particles such as silicon nitride particles and boron nitride particles; carbide particles such as silicon carbide particles and boron carbide particles; diamond particles; carbonates such as calcium carbonate and barium carbonate.
- the organic particles include polymethyl methacrylate (PMMA) particles, poly (meth) acrylic acid particles, and polyacrylonitrile particles. Such an abrasive grain may be used individually by 1 type, and may be used in combination of 2 or more type.
- (meth) acrylic acid is the meaning which points out acrylic acid and methacrylic acid comprehensively.
- a particularly preferable abrasive grain in the technology disclosed herein includes silica particles.
- the technique disclosed here can be preferably implemented, for example, in a mode in which the abrasive grains are substantially composed of silica particles.
- substantially means that 95% by weight or more, preferably 98% by weight or more, more preferably 99% by weight or more of the particles constituting the abrasive grains are silica particles. 100% by weight of the particles may be silica particles.
- the silica particles include colloidal silica, fumed silica, precipitated silica and the like.
- Silica particles can be used alone or in combination of two or more.
- Colloidal silica is particularly preferable because scratches are hardly generated on the surface of the object to be polished and good polishing performance can be exhibited.
- good polishing performance refers to performance that reduces surface roughness.
- colloidal silica for example, colloidal silica produced using water glass as a raw material by an ion exchange method or alkoxide colloidal silica can be preferably used. Water glass is also called Na silicate.
- the alkoxide colloidal silica refers to colloidal silica produced by hydrolysis condensation reaction of alkoxysilane. Colloidal silica can be used alone or in combination of two or more.
- the true specific gravity of silica constituting the silica particles is preferably 1.5 or more, more preferably 1.6 or more, and even more preferably 1.7 or more. As the true specific gravity of silica increases, the polishing rate tends to increase. From this viewpoint, silica particles having a true specific gravity of 2.0 or more are particularly preferable. In a particularly preferred embodiment, the true specific gravity is, for example, 2.1 or more. The upper limit of the true specific gravity of silica is not particularly limited, but is typically 2.3 or less, for example, 2.2 or less. As the true specific gravity of silica, a measured value by a liquid substitution method using ethanol as a substitution liquid can be adopted.
- the average primary particle diameter of the abrasive grains disclosed herein is not particularly limited.
- the abrasive grains are typically silica particles.
- the average primary particle size is suitably 5 nm or more, preferably 10 nm or more, more preferably 30 nm or more, still more preferably 40 nm or more, and particularly preferably 45 nm or more.
- the average primary particle diameter is, for example, 50 nm or more.
- the average primary particle diameter of the abrasive grains is suitably about 200 nm or less, preferably 100 nm or less, more preferably 80 nm or less, and even more preferably 70 nm or less.
- the average primary particle size of the abrasive grains can be 60 nm or less, for example 55 nm or less.
- the specific surface area measured by the BET method is referred to as a BET value.
- the specific surface area can be measured using, for example, a surface area measuring device manufactured by Micromeritex Corporation, a trade name “Flow Sorb II 2300”.
- the shape of the abrasive grains may be spherical or non-spherical.
- the said shape is an external shape.
- Specific examples of the non-spherical particles include a peanut shape, a bowl shape, a confetti shape, and a rugby ball shape.
- the peanut shape is the shape of a peanut shell.
- abrasive grains in which many of the particles have a peanut shape can be preferably used.
- the average value of the major axis / minor axis ratio of the abrasive grains is theoretically 1.0 or more, preferably 1.05 or more, and more preferably 1.1 or more.
- the average value of the major axis / minor axis ratio of the abrasive grains is also referred to as an average aspect ratio. By increasing the average aspect ratio, a higher polishing rate can be achieved.
- the average aspect ratio of the abrasive grains is preferably 3.0 or less, more preferably 2.0 or less, and still more preferably 1.5 or less, from the viewpoint of reducing scratches.
- the shape (outer shape) and average aspect ratio of the abrasive grains can be grasped by, for example, observation with an electron microscope.
- an electron microscope As a specific procedure for grasping the average aspect ratio, for example, with a scanning electron microscope (SEM), for a predetermined number of silica particles capable of recognizing the shape of independent particles, the minimum circumscribing each particle image is performed.
- the predetermined number is, for example, 200.
- the value obtained by dividing the length of the long side (major axis value) by the length of the short side (minor axis value) is the major axis / minor axis ratio (aspect ratio). ).
- An average aspect ratio can be obtained by arithmetically averaging the aspect ratios of the predetermined number of particles.
- the content (concentration) of abrasive grains in the concentrate disclosed herein can be, for example, 50% by weight or less. From the viewpoint of the stability of the concentrate, filterability, and the like, it is usually appropriate that the content of abrasive grains be 45% by weight or less, for example 40% by weight or less, typically 35% by weight or less.
- the content of the abrasive is preferably 30% by weight or less, more preferably 25% by weight or less, and still more preferably 20% by weight or less. In a more preferred embodiment, the content of the abrasive grains is, for example, 15% by weight or less.
- the content of the abrasive grains in the concentrated liquid is usually 1% by weight or more, for example, 3% by weight or more, from the viewpoints of the abrasive grain concentration of the polishing composition after dilution, convenience of production, distribution, storage and the like. Typically, it is suitable to be 5% by weight or more.
- the content of the abrasive is preferably 8% by weight or more. In a preferred embodiment, the content of the abrasive grains is, for example, 10% by weight or more, and further 12% by weight or more.
- Water-soluble polymer As the water-soluble polymer contained in the concentrated liquid disclosed herein, those having a radius of gyration (rg) satisfying a ratio [rg / d] of a predetermined value or less are used.
- the polishing slurry containing such a water-soluble polymer is well wetted and familiar with the substrate to be polished, and as a result, the polishing performance can be improved.
- the polishing performance here is typically flatness.
- the inertia radius rg of the water-soluble polymer is the size of one molecule of the water-soluble polymer in the aqueous solution, which can be mainly determined by the hydrophilicity, molecular weight, etc. of the polymer.
- the upper limit value of the inertia radius rg is a value limited in the relative relationship with the interparticle distance d because the upper limit of the ratio [rg / d] is limited.
- the inertial radius rg of the water-soluble polymer according to one embodiment is about 500 nm or less, and suitably about 300 nm or less. Further, when a water-soluble polymer having an inertia radius rg of 220 nm or less, more preferably 150 nm or less is used, the above ratio [rg / d] can be preferably satisfied. Concentration efficiency also tends to improve.
- the inertia radius rg may be about 100 nm or less, for example 70 nm or less.
- the water-soluble polymer has an inertial radius rg of 30 nm or more, and more preferably 50 nm or more.
- the inertia radius rg is more preferably 80 nm or more, further preferably 100 nm or more, and particularly preferably 120 nm or more.
- the inertia radius rg is, for example, 140 nm or more. According to the technique disclosed herein, even if the inertia radius rg of the water-soluble polymer is equal to or greater than a predetermined value, the concentrated liquid can realize excellent stability.
- polishing liquid containing a water-soluble polymer having an inertia radius rg of a predetermined value or more when used, wettability to the substrate surface is better exhibited and the polishing performance tends to be further improved.
- the polishing performance here is typically flatness.
- the inertial radius rg of the water-soluble polymer in the present specification is measured by the method described in Examples described later.
- the type of the water-soluble polymer contained in the concentrate disclosed herein is not particularly limited, and can be appropriately selected from water-soluble polymer species known in the field of polishing compositions.
- a water-soluble polymer can be used singly or in combination of two or more.
- the water-soluble polymer include cellulose derivatives, starch derivatives, polymers containing oxyalkylene units, polymers containing nitrogen atoms, polyvinyl alcohol and the like. Among these, from the viewpoint of improving flatness, cellulose derivatives and starch derivatives are preferable, and cellulose derivatives are more preferable.
- Cellulose derivatives are polymers containing ⁇ -glucose units as the main repeating unit.
- Specific examples of the cellulose derivative include hydroxyethyl cellulose (HEC), hydroxypropyl cellulose, hydroxyethyl methyl cellulose, hydroxypropyl methyl cellulose, methyl cellulose, ethyl cellulose, ethyl hydroxyethyl cellulose, carboxymethyl cellulose and the like. Of these, HEC is preferable.
- Starch derivatives are polymers that contain ⁇ -glucose units as the main repeating unit. Specific examples of starch derivatives include pregelatinized starch, pullulan, carboxymethyl starch, and cyclodextrin. Of these, pullulan is preferred.
- Polymers containing oxyalkylene units include polyethylene oxide (PEO), block copolymers of ethylene oxide (EO) and propylene oxide (PO) or butylene oxide (BO), and random copolymerization of EO and PO or BO. Examples include coalescence. Among these, a block copolymer of EO and PO or a random copolymer of EO and PO is preferable.
- the block copolymer of EO and PO may be a diblock body, a triblock body or the like including a PEO block and a polypropylene oxide (PPO) block. Examples of the triblock body include a PEO-PPO-PEO type triblock body and a PPO-PEO-PPO type triblock body.
- the molar ratio [EO / PO] of EO and PO constituting the copolymer is from the viewpoint of solubility in water, detergency, and the like. It is preferably larger than 1, more preferably 2 or more, and further preferably 3 or more. In a more preferred embodiment, the molar ratio [EO / PO] is, for example, 5 or more.
- both a polymer containing a nitrogen atom in the main chain and a polymer having a nitrogen atom in a side chain functional group (pendant group) can be used.
- a polymer containing nitrogen atoms By using a polymer containing nitrogen atoms, the surface roughness of the substrate can be improved.
- the polymer containing a nitrogen atom in the main chain include homopolymers and copolymers of N-acylalkylenimine type monomers.
- Specific examples of the N-acylalkyleneimine monomer include N-acetylethyleneimine, N-propionylethyleneimine and the like.
- the polymer having a nitrogen atom in the pendant group include a polymer containing an N-vinyl type monomer unit.
- homopolymers and copolymers of N-vinylpyrrolidone can be employed.
- at least one of a homopolymer and a copolymer of N-vinylpyrrolidone obtained by polymerizing N-vinylpyrrolidone at a ratio of 50 mol% or more (hereinafter also referred to as “PVP”).
- PVP polymerizing N-vinylpyrrolidone at a ratio of 50 mol% or more
- the saponification degree of the polyvinyl alcohol is not particularly limited.
- the molecular weight of the water-soluble polymer can be appropriately set within a range that satisfies a ratio [rg / d] of a predetermined value or less.
- the weight average molecular weight (Mw) of the water-soluble polymer can be about 200 ⁇ 10 4 or less from the viewpoint of stability, concentration efficiency, etc., and is usually 150 ⁇ 10 4 or less, for example, 100 ⁇ 10 4 or less. Is appropriate.
- the Mw for example 50 ⁇ 10 4 or less, or may be 30 ⁇ 10 4 or less.
- Mw is suitably 1 ⁇ 10 4 or more, more preferably 10 ⁇ 10 4 or more, and even more preferably 20 ⁇ 10 4 or more.
- the Mw may be, for example, 50 ⁇ 10 4 or more and 100 ⁇ 10 4 or more.
- the above Mw can be particularly preferably applied to cellulose derivatives. Examples of the cellulose derivative include HEC.
- Mw of the water-soluble polymer a value based on an aqueous gel permeation chromatography (GPC) (aqueous, polyethylene oxide equivalent) can be adopted.
- GPC gel permeation chromatography
- the technique disclosed herein is preferably implemented in a mode in which two or more water-soluble polymers are used in combination.
- one or more water-soluble polymers P1 selected from cellulose derivatives and starch derivatives, and water-soluble polymers other than cellulose derivatives and starch derivatives The combined use with 1 type or 2 types or more of P2 is more preferable.
- the water-soluble polymer P1 is typically a cellulose derivative such as HEC.
- the water-soluble polymer P2 is preferably a polymer containing a nitrogen atom in the main chain, a polymer having a nitrogen atom in the side chain functional group (pendant group), and more preferably a polymer containing an N-vinyl type monomer unit.
- N-vinylpyrrolidone homopolymers and copolymers are particularly preferred.
- the blending ratio of the water-soluble polymer P1 and the water-soluble polymer P2 is not particularly limited.
- the ratio [P2 / P1] of the content of the water-soluble polymer P2 to the content of the water-soluble polymer P1 is suitably 0.1 or more.
- the ratio [P2 / P1] is, for example, 0.25 or more, typically 0.5 or more.
- the ratio [P2 / P1] is suitably about 10 or less.
- the ratio [P2 / P1] is, for example, 2.5 or less, typically less than 1.
- the water-soluble polymer P1 is a cellulose derivative such as HEC
- the water-soluble polymer P2 is a polymer containing an N-vinyl type monomer unit such as PVP.
- the molecular weight of the water-soluble polymer P1 can be appropriately set within a range that satisfies a ratio [rg / d] of a predetermined value or less.
- the weight average molecular weight (Mw) of the water-soluble polymer P1 can be about 200 ⁇ 10 4 or less from the viewpoint of stability, concentration efficiency, etc., and is usually 150 ⁇ 10 4 or less, for example, 100 ⁇ 10 4 or less. Is appropriate.
- the Mw may be, for example, 50 ⁇ 10 4 or less and 30 ⁇ 10 4 or less.
- Mw is suitably 1 ⁇ 10 4 or more, more preferably 10 ⁇ 10 4 or more, and even more preferably 20 ⁇ 10 4 or more.
- the Mw for example 50 ⁇ 10 4 or more, may be 100 ⁇ 10 4 or more.
- the above Mw can be particularly preferably applied to cellulose derivatives.
- the cellulose derivative is, for example, HEC.
- the molecular weight of the water-soluble polymer P2 is not particularly limited.
- the weight average molecular weight (Mw) of the water-soluble polymer P2 can be about 300 ⁇ 10 4 or less, and is usually 150 ⁇ 10 4 or less, for example, 50 ⁇ 10 4 or less. From the viewpoint of stability and the like, the Mw may be 30 ⁇ 10 4 or less, for example, 5 ⁇ 10 4 or less. From the viewpoint of the surface protection improvement, typically, Mw is suitably 1 ⁇ 10 4 or more, more preferably 2 ⁇ 10 4 or more, more preferably 3 ⁇ 10 4 or more.
- the above Mw can be particularly preferably applied to homopolymers and copolymers (typically PVP) of N-vinylpyrrolidone.
- the content (concentration) of the water-soluble polymer in the concentrate disclosed herein is not particularly limited, and can be, for example, 0.0001% by weight or more. From the viewpoint of improving polishing performance, the preferable content is 0.001% by weight or more, more preferably 0.0025% by weight or more, for example, 0.005% by weight or more.
- the polishing performance is specifically flatness. Further, from the viewpoint of polishing rate and the like, the content is preferably 1% by weight or less, more preferably 0.2% by weight or less, further preferably 0.1% by weight or less, It is particularly preferable that the content be 0.05% by weight or less. In a particularly preferred embodiment, the content of the water-soluble polymer is, for example, 0.02% by weight or less.
- the content of the water-soluble polymer in the concentrate disclosed herein can also be specified by the relative relationship with the abrasive grains contained in the concentrate.
- the content of the water-soluble polymer is suitably 0.001 part by weight or more with respect to 100 parts by weight of the abrasive grains, and preferably 0.005 weight from the viewpoint of improving the polishing performance.
- Part or more more preferably 0.01 part by weight or more, and still more preferably 0.015 part by weight or more.
- the content of the water-soluble polymer is, for example, 0.03 parts by weight or more with respect to 100 parts by weight of the abrasive grains.
- the polishing performance is specifically flatness.
- the content of the water-soluble polymer is suitably 10 parts by weight or less, preferably 1 part by weight or less, more preferably 100 parts by weight of abrasive grains. Is 0.5 parts by weight or less, more preferably 0.1 parts by weight or less. In a further preferred embodiment, the content of the water-soluble polymer is, for example, 0.05 parts by weight or less with respect to 100 parts by weight of the abrasive grains.
- the concentrate disclosed here contains a basic compound.
- the basic compound refers to a compound having a function of dissolving in water and increasing the pH of an aqueous solution.
- an organic or inorganic basic compound containing nitrogen, an alkali metal hydroxide, an alkaline earth metal hydroxide, various carbonates, bicarbonates, or the like can be used.
- Examples of basic compounds containing nitrogen include quaternary ammonium compounds, quaternary phosphonium compounds, ammonia, amines and the like.
- the amine is preferably a water-soluble amine.
- Such basic compounds can be used singly or in combination of two or more.
- alkali metal hydroxide examples include potassium hydroxide and sodium hydroxide.
- Specific examples of the carbonate or bicarbonate include ammonium bicarbonate, ammonium carbonate, potassium bicarbonate, potassium carbonate, sodium bicarbonate, sodium carbonate and the like.
- amines include methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, N- ( ⁇ -aminoethyl) ethanolamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine, anhydrous piperazine , Piperazine hexahydrate, 1- (2-aminoethyl) piperazine, N-methylpiperazine, guanidine, azoles such as imidazole and triazole, and the like.
- quaternary phosphonium compound include quaternary phosphonium hydroxide such as tetramethylphosphonium hydroxide and tetraethylphosphonium hydroxide.
- quaternary ammonium salt such as a tetraalkylammonium salt or a hydroxyalkyltrialkylammonium salt can be preferably used.
- the quaternary ammonium salt is typically a strong base.
- the anionic component in such a quaternary ammonium salt can be, for example, OH ⁇ , F ⁇ , Cl ⁇ , Br ⁇ , I ⁇ , ClO 4 ⁇ , BH 4 ⁇ and the like.
- the anion is OH - a is a quaternary ammonium salt, i.e., include quaternary ammonium hydroxide.
- quaternary ammonium hydroxide examples include hydroxides such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, and tetrahexylammonium hydroxide.
- tetraalkylammonium hydroxide is preferable, and tetramethylammonium hydroxide (TMAH) is particularly preferable.
- the concentrate disclosed herein may contain a combination of a quaternary ammonium compound and a weak acid salt as described above.
- the quaternary ammonium compound is, for example, a tetraalkylammonium hydroxide such as TMAH.
- TMAH tetraalkylammonium hydroxide
- the weak acid salt one that can be used for polishing using silica particles and can exhibit a desired buffering action in combination with a quaternary ammonium compound can be appropriately selected.
- the weak acid salts can be used alone or in combination of two or more.
- weak acid salts include sodium carbonate, potassium carbonate, sodium bicarbonate, potassium bicarbonate, sodium orthosilicate, potassium orthosilicate, sodium acetate, potassium acetate, sodium propionate, potassium propionate, calcium carbonate, calcium bicarbonate , Calcium acetate, calcium propionate, magnesium acetate, magnesium propionate, zinc propionate, manganese acetate, cobalt acetate and the like.
- Weak acid salts in which the anion component is carbonate ion or hydrogen carbonate ion are preferred, and weak acid salts in which the anion component is carbonate ion are particularly preferred.
- alkali metal ions such as potassium and sodium, are suitable.
- Particularly preferred weak acid salts include sodium carbonate, potassium carbonate, sodium bicarbonate and potassium bicarbonate. Of these, potassium carbonate (K 2 CO 3 ) is preferable.
- the blending ratio of the quaternary ammonium compound and the weak acid salt is not particularly limited.
- the quaternary ammonium compound is, for example, a tetraalkylammonium hydroxide such as TMAH.
- the weak acid salt is, for example, a weak acid salt whose anion component such as K 2 CO 3 is a carbonate ion.
- the content (concentration) of the basic compound in the concentrated liquid disclosed herein is, for example, 0.1% by weight or more from the viewpoint of stability of the concentrated liquid, improvement of the polishing rate by the polishing composition after dilution, and the like. Specifically, the content is suitably 0.3% by weight or more, preferably 0.5% by weight or more, more preferably 0.6% by weight or more, and further preferably 0.8% by weight or more. In a more preferred embodiment, the content of the basic compound is, for example, 1.0% by weight or more, typically 1.2% by weight or more. For example, when the concentrated liquid is used after being diluted at a high magnification, the abrasive concentration after dilution is relatively low, and the processing force by the abrasive may tend to decrease.
- the upper limit of the content of the basic compound in the concentrated solution is suitably 10% by weight or less, preferably 5% by weight or less, from the viewpoints of storage stability and surface quality.
- the content of the basic compound is, for example, 3% by weight or less.
- the content of the basic compound in the concentrate can be specified by the relative relationship with the abrasive grains contained in the concentrate.
- the content of the basic compound in the concentrated solution is suitably 0.1 parts by weight or more with respect to 100 parts by weight of the abrasive grains, and preferably 1 weight from the viewpoint of improving the polishing rate. Part or more, more preferably 3 parts by weight or more, still more preferably 6 parts by weight or more.
- the content of the basic compound in the concentrated liquid may be, for example, about 12 parts by weight or more and 22 parts by weight or more.
- the content of the basic compound is suitably 50 parts by weight or less, preferably 30 parts by weight or less, with respect to 100 parts by weight of the abrasive grains.
- the content of the basic compound in the concentrate may be, for example, 20 parts by weight or less and 10 parts by weight or less with respect to 100 parts by weight of the abrasive grains.
- the concentrate disclosed herein typically contains water.
- water ion exchange water (deionized water), pure water, ultrapure water, distilled water and the like can be preferably used.
- the water to be used preferably has, for example, a total content of transition metal ions of 100 ppb or less in order to avoid as much as possible the action of other components contained in the concentrate.
- the purity of water can be increased by operations such as removal of impurity ions with an ion exchange resin, removal of foreign matter with a filter, distillation, and the like.
- the concentrate disclosed here may further contain an organic solvent that can be uniformly mixed with water, if necessary.
- the organic solvent is a lower alcohol, a lower ketone or the like.
- aqueous solvent may be used as a general term including the solvent and water.
- the concentrated liquid disclosed herein can contain a chelating agent as an optional component.
- the chelating agent functions to suppress contamination of the object to be polished by metal impurities by forming complex ions with metal impurities that can be contained in the concentrated liquid and capturing them.
- Examples of chelating agents include aminocarboxylic acid chelating agents and organic phosphonic acid chelating agents.
- aminocarboxylic acid-based chelating agents include ethylenediaminetetraacetic acid, ethylenediaminetetraacetic acid sodium, nitrilotriacetic acid, nitrilotriacetic acid sodium, nitrilotriacetic acid ammonium, hydroxyethylethylenediaminetriacetic acid, hydroxyethylethylenediamine sodium triacetate, diethylenetriaminepentaacetic acid Diethylenetriamine sodium pentaacetate, triethylenetetramine hexaacetic acid and sodium triethylenetetramine hexaacetate.
- organic phosphonic acid chelating agents examples include 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri (methylenephosphonic acid), ethylenediaminetetrakis (methylenephosphonic acid), diethylenetriaminepenta (methylenephosphonic).
- ethylenediaminetetrakis methylenephosphonic acid
- diethylenetriaminepenta methylenephosphonic acid
- diethylenetriaminepentaacetic acid are preferable.
- Particularly preferred chelating agents include ethylenediaminetetrakis (methylenephosphonic acid) and diethylenetriaminepenta (methylenephosphonic acid).
- a chelating agent can be used individually by 1 type or in combination of 2 or more types.
- the concentrated liquid disclosed herein is a polishing slurry such as a surfactant, organic acid, organic acid salt, inorganic acid, inorganic acid salt, preservative, antifungal agent, etc., as long as the effect of the present invention is not significantly hindered. You may further contain the well-known additive which may be used for this as needed.
- the surfactant various surfactants such as nonionic, anionic and cationic can be used. Of these, nonionic surfactants are preferred from the viewpoint of preventing precipitation of water-soluble polymers such as polyvinyl alcohol.
- the polishing slurry is typically a polishing slurry used in a silicon substrate polishing process.
- the concentrate disclosed here contains substantially no oxidizing agent. If the concentrate contains an oxidizing agent, the polishing slurry after dilution of the concentrate is supplied to the object to be polished (here, the silicon substrate), so that the surface of the object to be polished is oxidized and oxidized. This is because a film may be formed, which may reduce the polishing rate.
- the oxidizing agent herein include hydrogen peroxide (H 2 O 2 ), sodium persulfate, ammonium persulfate, sodium dichloroisocyanurate, and the like.
- a concentrate does not contain an oxidizing agent substantially means not containing an oxidizing agent at least intentionally.
- the pH of the concentrate disclosed herein is typically 8.0 or higher, preferably 8.5 or higher, more preferably 9.0 or higher, even more preferably 9.5 or higher, such as 10.0 or higher. And particularly preferably 10.5 or more.
- the pH of the concentrate is suitably 12.0 or less and 11.8 or less from the viewpoint of preventing dissolution of the abrasive grains and suppressing the reduction of the mechanical polishing action by the abrasive grains.
- it is 11.5 or less.
- the abrasive grains are, for example, silica particles.
- the pH of the liquid composition is adjusted to 3 using a pH buffer and a standard buffer solution, and then the glass electrode is placed in the composition to be measured. It can be grasped by measuring the value after a minute or more has passed and stabilized.
- the liquid composition may be a polishing slurry, a concentrated liquid thereof, or the like.
- a glass electrode type hydrogen ion concentration indicator (model number F-23) manufactured by HORIBA, Ltd. is used.
- the standard buffer solutions are phthalate pH buffer solution pH: 4.01 (25 ° C.), neutral phosphate pH buffer solution pH: 6.86 (25 ° C.), carbonate pH buffer solution pH: 10. 01 (25 ° C.).
- each component contained in the concentrate may be mixed using a well-known mixing device such as a blade-type stirrer, an ultrasonic disperser, or a homomixer.
- a well-known mixing device such as a blade-type stirrer, an ultrasonic disperser, or a homomixer.
- the aspect which mixes these components is not specifically limited, For example, all the components may be mixed at once and may be mixed in the order set suitably.
- the same mixing method can be appropriately employed before and after dilution of the concentrate.
- the concentrate of the polishing composition disclosed herein is diluted with a magnification larger than 5 times on a volume basis and prepared as a polishing liquid, and then used for rough polishing of a substrate to be polished.
- the substrate to be polished is specifically a silicon wafer.
- the concentrated solution diluted at a predetermined magnification or more tends to have a high concentration of components, so that the components are easily separated and aggregated, and it is difficult to obtain good stability.
- the concentrated solution exhibits excellent stability by preparing the concentrated solution so that the ratio [rg / d] is not more than a predetermined value.
- the concentrated composition exhibits excellent stability when diluted, and the polishing composition after dilution is Good polishing performance can be realized.
- the dilution ratio may be 15 times or more, for example, 25 times or more on a volume basis.
- the upper limit of the dilution ratio is not particularly limited, but may be about 50 times or less, for example, 40 times or less, typically 35 times or less on a volume basis.
- the above dilution can be performed at a desired timing.
- the dilution can be performed by adding the aqueous solvent to the concentrate and mixing.
- the aqueous solvent is typically water.
- As the liquid used for dilution it is preferable to use an aqueous solvent consisting essentially of water from the viewpoints of handleability and workability.
- the water is typically ion exchange water.
- the aqueous solvent is, for example, an aqueous solvent in which 99.5 to 100% by volume is water.
- the aqueous solvent is a mixed solvent, only a part of the components of the aqueous solvent may be added for dilution, and a mixture containing these components in a different ratio from the aqueous solvent.
- a solvent may be added for dilution.
- the polishing composition disclosed herein contains abrasive grains, a water-soluble polymer, and a basic compound contained in the concentrated liquid described above. Moreover, it typically contains water, and may further contain a chelating agent and other components as optional components. Since these specific examples are as described above, description thereof will not be repeated here.
- the polishing composition is also referred to as a polishing liquid or a polishing slurry.
- the content of abrasive grains in the polishing composition obtained by diluting the concentrated liquid disclosed herein can be determined by the abrasive grain concentration and dilution ratio in the concentrated liquid.
- the content is preferably 0.05% by weight or more, more preferably 0.1% by weight or more, and further preferably 0.3% by weight or more. In a more preferred embodiment, the content is, for example, 0.5% by weight or more. Higher polishing rates can be achieved by increasing the abrasive content.
- the content is usually suitably 10% by weight or less, preferably 7% by weight or less, more preferably 5% by weight or less, and further preferably 3% by weight. % Or less. In a more preferred embodiment, the content is, for example, 2% by weight or less.
- the content of the water-soluble polymer in the polishing composition is suitably 1 ⁇ 10 ⁇ 5 wt% or more, for example, 5 ⁇ 10 ⁇ 5 wt% or more, from the viewpoint of improving polishing performance and surface quality. Yes, preferably 1 ⁇ 10 ⁇ 4 wt% or more. In a preferred embodiment, the content of the water-soluble polymer is, for example, 2 ⁇ 10 ⁇ 4 wt% or more.
- the upper limit of the content of the water-soluble polymer in the polishing composition can be, for example, 1% by weight or less.
- the content of the water-soluble polymer is preferably 0.1% by weight or less, more preferably 0.05% by weight or less, and even more preferably 0.02. % By weight or less. In a more preferred embodiment, the content of the water-soluble polymer is, for example, 0.01% by weight or less, typically 0.005% by weight or less.
- the content of the water-soluble polymer in the polishing composition is suitably 0.001 part by weight or more with respect to 100 parts by weight of the abrasive grains. It is 005 weight part or more, More preferably, it is 0.01 weight part or more, More preferably, it is 0.015 weight part or more. In a more preferred embodiment, the content of the water-soluble polymer in the polishing composition is, for example, 0.03 parts by weight or more with respect to 100 parts by weight of the abrasive grains.
- the polishing performance is specifically flatness.
- the content of the water-soluble polymer is suitably 10 parts by weight or less, preferably 1 part by weight or less, more preferably 100 parts by weight of abrasive grains. Is 0.5 parts by weight or less, more preferably 0.1 parts by weight or less. In a more preferred embodiment, the content of the water-soluble polymer is, for example, 0.05 parts by weight or less with respect to 100 parts by weight of the abrasive grains.
- the content of the basic compound in the polishing composition is, for example, 0.001% by weight or more, typically 0.01% by weight or more. From the viewpoint of improvement and the like, it is preferably 0.05% by weight or more, more preferably 0.07% by weight or more, and further preferably 0.09% by weight or more. Stability can also be improved by increasing the content of the basic compound.
- the upper limit of the content of the basic compound is suitably 5% by weight or less, and preferably 1% by weight or less from the viewpoint of surface quality and the like. In a preferred embodiment, the content of the basic compound is, for example, 0.5% by weight or less, typically 0.2% by weight or less.
- the pH of the polishing composition in the technique disclosed herein is preferably 8.0 or more, for example 8.5 or more, more preferably 9.0 or more, and still more preferably 9.5 or more. In a more preferred embodiment, the pH is, for example, 10.0 or more.
- the upper limit of the pH of the polishing liquid is not particularly limited, it is preferably 12.0 or less, for example, 11.5 or less, and more preferably 11.0 or less, from the viewpoint of better polishing the object to be polished. .
- the pH is more preferably 10.8 or less.
- the pH is, for example, 10.6 or less, typically 10.5 or less.
- the improvement in surface quality is typically a reduction in surface roughness.
- the pH can be preferably applied to, for example, a polishing liquid used for polishing a silicon wafer.
- the polishing liquid is, for example, a polishing liquid for rough polishing.
- the technique disclosed herein is preferably applied to polishing using a silicon substrate (particularly a silicon wafer) as an object to be polished.
- a typical example of the silicon wafer here is a silicon single crystal wafer, for example, a silicon single crystal wafer obtained by slicing a silicon single crystal ingot.
- the surface to be polished in the technique disclosed herein is typically a surface made of silicon.
- the silicon substrate is subjected to general treatment that can be applied to the silicon substrate in a process upstream of the rough polishing process, such as lapping and etching, before the polishing process using the polishing liquid disclosed herein. May be.
- a finish polishing step can be performed on the silicon substrate after the polishing step using the polishing liquid.
- the finishing process includes one or more polishing processes, and the final polishing is performed to finish the silicon wafer into a high-quality mirror surface.
- final polishing refers to the final polishing step in the manufacturing process of the object. That is, final polishing refers to a process in which no further polishing is performed after that process.
- the polishing liquid disclosed herein and the concentrated liquid before dilution can be used for polishing a silicon wafer that has undergone lapping. Further, the polishing liquid and the concentrated liquid can be used for rough polishing performed before final polishing of the silicon wafer. Rough polishing is also called preliminary polishing.
- Polishing of the object to be polished can be performed, for example, as follows. That is, the concentrate disclosed here is diluted to prepare a polishing composition (polishing slurry). Next, the polishing slurry (working slurry) is supplied to the object to be polished and polished by a conventional method. In rough polishing of a silicon wafer, typically, an object to be polished (silicon wafer) that has undergone a lapping process is set in a polishing apparatus, and the above-mentioned is performed through a polishing pad fixed to a surface plate (polishing surface plate) of the polishing apparatus. A polishing slurry is supplied to the surface of the object to be polished (surface to be polished).
- the polishing pad is pressed against the surface of the object to be polished, and the two are relatively moved.
- the movement is, for example, a rotational movement.
- the polishing of the object to be polished is completed through this polishing step.
- the polishing pad used in the above polishing process is not particularly limited.
- a polishing pad of foamed polyurethane type, non-woven fabric type, suede type or the like can be used.
- Each polishing pad may include abrasive grains or may not include abrasive grains.
- a double-side polishing apparatus that simultaneously polishes both sides of the object to be polished, or a single-side polishing apparatus that polishes only one side of the object to be polished may be used.
- a double-side polishing apparatus can be preferably employed in the rough polishing step.
- the double-side polishing apparatus is, for example, a batch type double-side polishing apparatus.
- the polishing apparatus may be a single wafer type polishing apparatus configured to polish one polishing object at a time, or a batch type polishing apparatus capable of simultaneously polishing a plurality of polishing objects on the same surface plate. But you can.
- the object to be polished that has finished the rough polishing step is typically cleaned before the finish polishing step is started. This washing can be performed using an appropriate washing solution.
- the cleaning liquid to be used is not particularly limited, and for example, a common SC-1 cleaning liquid, SC-2 cleaning liquid, etc. in the field of semiconductors can be used.
- the SC-1 cleaning liquid is a mixed liquid of ammonium hydroxide (NH 4 OH), hydrogen peroxide (H 2 O 2 ), and water (H 2 O).
- the SC-2 cleaning solution is a mixed solution of HCl, H 2 O 2 and H 2 O.
- the temperature of the cleaning liquid can be, for example, in the range from room temperature to about 90 ° C. Here, room temperature typically means about 15 ° C. to 25 ° C. From the viewpoint of improving the cleaning effect, a cleaning solution of about 50 ° C. to 85 ° C. can be preferably used.
- the polishing object is a silicon substrate, typically a silicon single crystal wafer. Therefore, according to this specification, a method for producing a polished article including the polishing step is provided. Specifically, the manufacturing method is a method for manufacturing a silicon wafer.
- the concentrate of the composition for silicon wafer rough polishing containing an abrasive grain, a basic compound, and water-soluble polymer is provided.
- the ratio [rg / d] of the radius of inertia rg [nm] of the water-soluble polymer to the interparticle distance d [nm] of the abrasive grains in the concentrated liquid is 4.7 or less.
- the concentrated liquid having such a configuration exhibits excellent stability and can exhibit good polishing performance after dilution.
- the polishing performance is typically a flatness improving effect.
- the ratio [rg / d] is 2.5 or less.
- the interparticle distance d of the abrasive grains is 200 nm or less. According to the technology disclosed herein, excellent stability can be realized even when the inter-particle distance d of the abrasive grains is not more than a predetermined value as described above. Further, as described above, the concentrated solution having the interparticle distance d of not more than a predetermined value can be concentrated at a high concentration, which is advantageous in terms of convenience and cost reduction.
- the water-soluble polymer has an inertia radius rg of 30 nm or more. According to the technique disclosed here, even if the inertial radius of the water-soluble polymer is not less than a predetermined value as described above, the concentrated liquid can realize excellent stability. In addition, as described above, a polishing liquid having a water-soluble polymer having an inertial radius of a predetermined value or more can exhibit more excellent polishing performance. The polishing performance is typically a flatness improving effect.
- the concentration of the abrasive grains is 5% by weight or more. According to the technology disclosed herein, excellent stability can be achieved even when the abrasive grain concentration is a predetermined value or more. Further, as described above, a concentrated liquid having an abrasive concentration equal to or higher than a predetermined value can be concentrated at a high concentration, which is advantageous in terms of convenience and cost reduction.
- the concentration of the water-soluble polymer is in the range of 0.001 to 0.05% by weight.
- the concentrated solution is diluted by a factor larger than 10 times on a volume basis and used for rough polishing of a silicon wafer. According to the technique disclosed herein, the concentrated solution is excellent in stability even at a high concentration ratio that is diluted at a predetermined magnification or higher. Moreover, the concentrated liquid concentrated to a predetermined concentration or more as described above is advantageous in terms of convenience and cost reduction.
- the concentrated solution is used for polishing a lapped silicon wafer. More specifically, the concentrated solution is used for rough polishing performed before final polishing of the silicon wafer. Rough polishing is also called preliminary polishing.
- Example 1-1 ⁇ Examples 1-1 to 1-11 and Comparative Example 1-1> [Preparation of polishing composition concentrate] By mixing colloidal silica (average primary particle size 54 nm) as abrasive grains, water-soluble polymer (HEC, PVP), TMAH, K 2 CO 3 and ion-exchanged water, Example 1-1 Concentrates of the polishing compositions according to ⁇ 1-11 and Comparative Example 1-1 were prepared. The concentration of the abrasive grains and the water soluble polymer in the concentrate in each example are as shown in Table 1, the concentration of TMAH and K 2 CO 3 is 1.62% and 1.05%.
- colloidal silica average primary particle size 54 nm
- HEC water-soluble polymer
- TMAH TMAH
- K 2 CO 3 ion-exchanged water
- the interparticle distance d [nm] of the abrasive grains was determined, and the inertia radius rg [nm] of the water-soluble polymer was measured by the following method.
- the ratio [rg / d] of the inertial radius rg [nm] of the water-soluble polymer to d [nm] was determined.
- Table 1 shows the interparticle distance d [nm] of the abrasive grains, the inertial radius rg [nm] and the ratio [rg / d] of the water-soluble polymer in each example.
- Example 2 ⁇ Experiment 2 ⁇ ⁇ Examples 2-1 to 2-14 and Comparative Examples 2-1 to 2-2> [Preparation of polishing composition concentrate] By mixing colloidal silica (average primary particle diameter 54 nm) as abrasive grains, water-soluble polymer (HEC, PVP, PVA), TMAH, K 2 CO 3 and ion-exchanged water, Example 2 Concentrates of polishing compositions according to -1 to 2-14 and Comparative Examples 2-1 to 2-2 were prepared. The concentrations of the abrasive grains and the water-soluble polymer in the concentrated liquid of each example are as shown in Table 2, and TMAH and K 2 CO 3 are each 0.067% in the polishing composition (polishing liquid) after dilution.
- colloidal silica average primary particle diameter 54 nm
- HEC water-soluble polymer
- TMAH TMAH
- K 2 CO 3 ion-exchanged water
- Example 2-14 polyoxyethylene lauryl ether was added as a nonionic surfactant to a concentration of 0.001%.
- the interparticle distance d [nm] of the abrasive grains was determined, and the inertial radius rg [nm] of the water-soluble polymer was measured by the same method as in Experiment 1. From the obtained value, the particle The ratio [rg / d] of the inertial radius rg [nm] of the water-soluble polymer to the inter-space distance d [nm] was determined. Further, the stability of the concentrate was also evaluated by the same method as in Experiment 1. Table 2 shows the evaluation results of the interparticle distance d [nm], the radius of inertia rg [nm] of the water-soluble polymer, the ratio [rg / d], and the concentrate stability.
- Model “EJ-380IN” Polishing pad Product name “MH S-15A”, manufactured by Nitta Haas Polishing pressure: 26.6 kPa Slurry flow rate: 100 mL / min Plate rotation speed: 50 rpm Head rotation speed: 50 rpm Polishing amount: 8 ⁇ m Work species: Bare Si P - ⁇ 100> Work size: ⁇ 60mm ⁇ 60mm
- the wafer thickness difference was less than 2.5 ⁇ m was evaluated as “A”
- the case where the wafer thickness difference was 2.5 ⁇ m or more and less than 3.0 ⁇ m was evaluated as “B”
- the wafer thickness difference was The case where it was 3.0 ⁇ m or more and 3.2 ⁇ m or less was evaluated as “C”
- the case where the wafer thickness difference was larger than 3.2 ⁇ m was evaluated as “D”.
- a to C were practically acceptable levels, and D was considered unacceptable. The results are shown in Table 2.
- concentration efficiency concentration efficiency
- the ratio [rg / d] of the radius of inertia rg [nm] of the water-soluble polymer to the interparticle distance d [nm] of the abrasive grains was 4.7 or less.
- the concentrated solutions according to Examples 1-1 to 1-11 were evaluated as acceptable.
- the stability evaluation result was A or B, and more excellent stability was obtained.
- the stability of the concentrate was at a reject level.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018531830A JP6916792B2 (ja) | 2016-08-02 | 2017-07-21 | シリコンウェーハ粗研磨用組成物の濃縮液 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016-152324 | 2016-08-02 | ||
JP2016152324 | 2016-08-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2018025655A1 true WO2018025655A1 (ja) | 2018-02-08 |
Family
ID=61073634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2017/026405 WO2018025655A1 (ja) | 2016-08-02 | 2017-07-21 | シリコンウェーハ粗研磨用組成物の濃縮液 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6916792B2 (zh) |
TW (1) | TWI744369B (zh) |
WO (1) | WO2018025655A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019187969A1 (ja) * | 2018-03-30 | 2019-10-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
EP3605589A4 (en) * | 2017-03-30 | 2020-03-18 | Fujimi Incorporated | POLISHING COMPOSITION AND POLISHING METHOD |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001326199A (ja) * | 2000-05-17 | 2001-11-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2007103515A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨方法 |
JP2014130965A (ja) * | 2012-12-28 | 2014-07-10 | Kao Corp | シリコンウェーハ用研磨液組成物 |
WO2015098777A1 (ja) * | 2013-12-25 | 2015-07-02 | ニッタ・ハース株式会社 | 半導体基板用濡れ剤及び研磨用組成物 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5900913B2 (ja) * | 2013-03-19 | 2016-04-06 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物製造方法および研磨用組成物調製用キット |
-
2017
- 2017-07-21 WO PCT/JP2017/026405 patent/WO2018025655A1/ja active Application Filing
- 2017-07-21 JP JP2018531830A patent/JP6916792B2/ja active Active
- 2017-08-02 TW TW106126003A patent/TWI744369B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001326199A (ja) * | 2000-05-17 | 2001-11-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2007103515A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨方法 |
JP2014130965A (ja) * | 2012-12-28 | 2014-07-10 | Kao Corp | シリコンウェーハ用研磨液組成物 |
WO2015098777A1 (ja) * | 2013-12-25 | 2015-07-02 | ニッタ・ハース株式会社 | 半導体基板用濡れ剤及び研磨用組成物 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3605589A4 (en) * | 2017-03-30 | 2020-03-18 | Fujimi Incorporated | POLISHING COMPOSITION AND POLISHING METHOD |
WO2019187969A1 (ja) * | 2018-03-30 | 2019-10-03 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
Also Published As
Publication number | Publication date |
---|---|
TW201811975A (zh) | 2018-04-01 |
TWI744369B (zh) | 2021-11-01 |
JPWO2018025655A1 (ja) | 2019-06-20 |
JP6916792B2 (ja) | 2021-08-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6279593B2 (ja) | 研磨用組成物、研磨用組成物の製造方法およびシリコンウェーハ製造方法 | |
JP6649828B2 (ja) | シリコン基板の研磨方法および研磨用組成物セット | |
WO2017150158A1 (ja) | シリコン基板の研磨方法および研磨用組成物セット | |
TWI781197B (zh) | 基板之研磨方法及研磨用組成物套組 | |
TW202140739A (zh) | 研磨用組成物及研磨方法 | |
JP6691774B2 (ja) | 研磨用組成物およびその製造方法 | |
WO2018150945A1 (ja) | シリコン基板中間研磨用組成物およびシリコン基板研磨用組成物セット | |
JP6377656B2 (ja) | シリコン基板の研磨方法および研磨用組成物セット | |
JP6916792B2 (ja) | シリコンウェーハ粗研磨用組成物の濃縮液 | |
JP7026043B2 (ja) | シリコンウェーハ粗研磨用組成物の製造方法、シリコンウェーハ粗研磨用組成物セット、およびシリコンウェーハの研磨方法 | |
KR101732331B1 (ko) | 실리콘 웨이퍼 연마용 조성물 | |
JP6562605B2 (ja) | 研磨用組成物の製造方法 | |
TWI572703B (zh) | Silicon wafer grinding composition | |
KR20220150962A (ko) | 연마용 조성물 및 연마 방법 | |
WO2021182278A1 (ja) | 研磨用組成物および研磨方法 | |
WO2023181929A1 (ja) | 研磨用組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 17836761 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2018531830 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 17836761 Country of ref document: EP Kind code of ref document: A1 |