WO2018008070A1 - Dispositif et procédé d'inspection - Google Patents

Dispositif et procédé d'inspection Download PDF

Info

Publication number
WO2018008070A1
WO2018008070A1 PCT/JP2016/069816 JP2016069816W WO2018008070A1 WO 2018008070 A1 WO2018008070 A1 WO 2018008070A1 JP 2016069816 W JP2016069816 W JP 2016069816W WO 2018008070 A1 WO2018008070 A1 WO 2018008070A1
Authority
WO
WIPO (PCT)
Prior art keywords
electromagnetic wave
unit
bias voltage
detection unit
terahertz wave
Prior art date
Application number
PCT/JP2016/069816
Other languages
English (en)
Japanese (ja)
Inventor
田中　博之
Original Assignee
パイオニア株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パイオニア株式会社 filed Critical パイオニア株式会社
Priority to JP2018525846A priority Critical patent/JP6761471B2/ja
Priority to PCT/JP2016/069816 priority patent/WO2018008070A1/fr
Publication of WO2018008070A1 publication Critical patent/WO2018008070A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation

Definitions

  • the present invention relates to a technical field of an inspection apparatus and method for inspecting a subject using electromagnetic waves.
  • this type of device for example, it has asymmetric forward and reverse current-voltage characteristics, operates as an oscillating element at a first operating point that exhibits negative differential resistance, and exhibits nonlinear characteristics that are not in the negative resistance region.
  • An apparatus including an oscillation detection element that operates as a detection element at two operating points has been proposed (see Patent Document 1).
  • Patent Document 1 has temperature dependence and has some individual differences. For this reason, unless the bias voltage applied to the element is appropriately set according to the use environment of the element, it may be difficult to maintain the stability of the detection operation. However, Patent Document 1 does not disclose how to set the bias voltage.
  • the present invention has been made in view of the above problems, for example, and an object of the present invention is to provide an inspection apparatus and method capable of realizing a stable detection operation.
  • the inspection apparatus of the present invention irradiates a subject with an electromagnetic wave generation unit, an electromagnetic wave detection unit, a reflection unit that can reflect an electromagnetic wave, and an electromagnetic wave generated from the electromagnetic wave generation unit During a part of the inspection period, the electromagnetic wave is incident on the electromagnetic wave detection unit without passing through the subject by the reflection unit, and is applied to the electromagnetic wave detection unit based on the detection sensitivity of the electromagnetic wave detection unit Adjusting means for adjusting the bias voltage to be applied.
  • an inspection method of the present invention is an inspection method in an inspection apparatus including an electromagnetic wave generation unit, an electromagnetic wave detection unit, and a reflection unit capable of reflecting an electromagnetic wave, from the electromagnetic wave generation unit
  • the electromagnetic wave is incident on the electromagnetic wave detection unit by the reflection unit without passing through the test object during a part of the examination period in which the generated electromagnetic wave is irradiated on the test object, and the electromagnetic wave detection unit detects the electromagnetic wave.
  • An adjustment step of adjusting a bias voltage applied to the electromagnetic wave detection unit based on sensitivity is provided.
  • the inspection apparatus includes an electromagnetic wave generation unit, an electromagnetic wave detection unit, and an adjustment unit that adjusts a bias voltage applied to the electromagnetic wave detection unit.
  • the adjusting means includes: a reflection part capable of reflecting electromagnetic waves; and a part of the examination period in which the electromagnetic wave generated from the electromagnetic wave generation part is irradiated on the subject without causing the reflection part to pass through the subject. Then, the light is incident on the electromagnetic wave detection unit, and the bias voltage is adjusted based on the detection sensitivity of the electromagnetic wave detection unit.
  • An example of the electromagnetic wave is a terahertz wave.
  • the bias voltage is adjusted based on the detection sensitivity of the electromagnetic wave detection unit during a part of the inspection period (that is, during the inspection period). For example, even when the optimum value of the bias voltage changes due to a temperature change during the inspection period, the inspection apparatus can apply the optimum bias voltage to the electromagnetic wave detection unit. Therefore, according to the inspection apparatus, a stable detection operation can be realized.
  • the reflection unit is provided at least at a part of the periphery of the placement unit on which the subject is placed.
  • the inspection apparatus further includes a scanning unit that moves the electromagnetic wave generation unit and the electromagnetic wave detection unit integrally so that the subject and the reflection unit are irradiated with the electromagnetic wave during the inspection period.
  • the reflection unit is disposed on the optical path of the electromagnetic wave connecting the electromagnetic wave generation unit and the subject.
  • the inspection apparatus reflects the reflection part so that the electromagnetic wave is incident on the electromagnetic wave detection part without passing through the subject during a part of the inspection period, and the subject is irradiated with the electromagnetic wave in the other part of the inspection period.
  • Angle changing means for changing the angle of the surface with respect to the electromagnetic wave is further provided.
  • the bias voltage can be adjusted relatively easily during a part of the inspection period.
  • the electromagnetic wave detection unit includes an electromagnetic wave detection element having nonlinearity in current-voltage characteristics.
  • the adjustment means sequentially changes the voltage value of the bias voltage applied to the electromagnetic wave detection unit (that is, applied to the electromagnetic wave detection element) during a part of the inspection period, so that the detection sensitivity of the electromagnetic wave detection unit is maximized.
  • the bias voltage is adjusted to a voltage value lower than the specified voltage value by a predetermined value.
  • the electromagnetic wave detection element may be a resonant tunnel diode. According to this aspect, it is possible to suitably detect a terahertz wave as an example of an electromagnetic wave.
  • the inspection method is an inspection method in an inspection apparatus including an electromagnetic wave generation unit, an electromagnetic wave detection unit, and a reflection unit capable of reflecting electromagnetic waves.
  • the electromagnetic wave is incident on the electromagnetic wave detection unit without passing through the subject by the reflection unit during a part of the inspection period in which the electromagnetic wave generated from the electromagnetic wave generation unit is irradiated on the subject.
  • An adjustment step of adjusting a bias voltage applied to the electromagnetic wave detection unit based on the detection sensitivity of the electromagnetic wave detection unit is provided.
  • a stable detection operation can be realized as in the inspection apparatus according to the above-described embodiment.
  • various aspects similar to the various aspects of the inspection apparatus according to the embodiment described above can be employed.
  • a terahertz wave measuring apparatus is taken as an example of an inspection apparatus according to the present invention.
  • a terahertz wave is mentioned as an example of the electromagnetic wave which concerns on this invention.
  • FIG. 1 is a schematic configuration diagram illustrating the configuration of the terahertz wave measuring apparatus according to the first embodiment.
  • FIG. 2 is a conceptual diagram illustrating a measurement operation of the terahertz wave measuring apparatus according to the first embodiment.
  • the terahertz wave measuring apparatus 1 includes an imaging head unit 10, a signal processing / control unit 20, a bias voltage generation unit 21, a signal amplifier 22, and a scanning mechanism 23.
  • the terahertz wave measuring device 1 is a so-called flat bed type device (see FIG. 2A).
  • the terahertz wave measuring apparatus 1 includes a sample stage 32 made of, for example, a fluororesin for placing the measurement object 90 and a scanner cover 33 that covers the measurement object 90.
  • the imaging head unit 10 includes a generation unit 11, a collimating lens 12, a beam splitter 13, an objective lens 14, a condenser lens 15, and a detection unit 16.
  • the generating unit 11 includes a terahertz wave generating element 11a and a horn antenna 11b.
  • the detection unit 16 includes a terahertz wave detection element 16a and a horn antenna 16b.
  • a bias voltage generated by the bias voltage generation unit 21 is applied to each of the terahertz wave generating element 11a and the terahertz wave detecting element 16a.
  • a bias voltage modulated based on a predetermined reference signal is applied to the terahertz wave generating element 11a.
  • the terahertz wave modulated at a constant frequency is emitted from the generation unit 11.
  • the terahertz wave emitted from the generator 11 is applied to the measurement object 90 through the collimator lens 12, the beam splitter 13, the objective lens 14, and the sample stage 32.
  • the terahertz wave reflected by the measurement object 90 enters the detection unit 16 via the sample stage 32, the objective lens 14, the beam splitter 13, and the condenser lens 15. From the detection unit 16, a reception signal corresponding to the incident terahertz wave is output.
  • the scanning mechanism 23 drives the imaging head unit 10 based on the drive signal from the signal processing / control unit 20. Specifically, as shown in FIG. 2B, a so-called raster scan is performed by the scan mechanism 23. The scanning mechanism 23 further generates an imaging position signal for monitoring the irradiation position of the terahertz wave emitted from the imaging head unit 10.
  • the signal processing / control unit 20 receives the reception signal output from the detection unit 16 via the signal amplifier 22.
  • the signal processing / control unit 20 uses the terahertz wave reception data signal generated from the reception signal output from the detection unit 16 and the scan mechanism 23.
  • a mapped terahertz wave image is generated based on the generated imaging position signal. It should be noted that various existing aspects can be applied to the method for generating a terahertz wave image image, and therefore, detailed description thereof is omitted.
  • the terahertz wave measuring apparatus 1 includes a terahertz wave for reflecting the terahertz wave emitted from the generating unit 11 around the sample stage 32 and inside the housing 31 (that is, on the imaging head unit 10 side).
  • a reflector 34 is provided.
  • the imaging head unit 10 and the terahertz wave reflecting unit 34 are overlapped when viewed in plan from above the terahertz wave measuring apparatus 1.
  • the imaging head unit 10 is driven.
  • the imaging head unit 10 and the terahertz wave reflection unit 34 overlap that is, when the imaging head 10 is positioned below the terahertz wave reflection unit 34
  • the terahertz wave emitted from the generation unit 11 is the measurement object 90. Without being irradiated, is reflected by the terahertz wave reflection unit 34 and enters the detection unit 16.
  • a resonant tunnel diode (Resonant Tunneling Diode: RTD) is used as the terahertz wave detecting element 16a.
  • RTD Resonant Tunneling Diode
  • the resonant tunnel diode as the terahertz wave detecting element 16a will be described with reference to FIG.
  • the resonant tunneling diode has a differential negative resistance region showing differential negative resistance characteristics in the current-voltage characteristics of its operating region (see the range from point B to point C in FIG. 3).
  • the resonant tunneling diode further has a non-linear region exhibiting strong non-linear characteristics in the vicinity of the differential negative resistance region (see the range from point A to point B in FIG. 3).
  • the resonant tunneling diode functions as a terahertz wave generating element when a bias voltage corresponding to the differential negative resistance region is applied.
  • the resonant tunneling diode functions as a terahertz detecting element when a bias voltage corresponding to the nonlinear region is applied.
  • the non-linear region is limited to a relatively narrow voltage range
  • the resonant tunneling diode in order for the resonant tunneling diode to operate stably as a terahertz wave detecting element, it is necessary to control the bias voltage with high accuracy. For this reason, if the bias voltage changes, or if the optimum bias voltage of the resonant tunneling diode changes due to, for example, a temperature change, the detection sensitivity may be significantly reduced (details will be described later).
  • the bias voltage of the terahertz wave detecting element 16a is set (or calibrated).
  • the setting process of the bias voltage of the terahertz wave detection element 16a will be described with reference mainly to the flowchart of FIG.
  • the signal processing / control unit 20 determines whether the imaging head unit 10 is located below the terahertz wave reflection unit 34 based on the imaging position signal generated by the scanning mechanism 23. (Step S101). In this determination, when it is determined that the imaging head unit 10 is not located below the terahertz wave reflection unit 34 (step S101: No), the signal processing / control unit 20 performs the process of step S101 again. That is, the imaging head unit 10 is in a standby state until it is positioned below the terahertz wave reflection unit 34.
  • step S101 when it is determined in step S101 that the imaging head unit 10 is located below the terahertz wave reflection unit 34 (step S101: Yes), the signal processing / control unit 20 applies the terahertz wave detection element 16a.
  • the bias voltage generation unit 21 is controlled so as to initialize the bias voltage to be executed (step S102).
  • the signal processing / control unit 20 controls the bias voltage generation unit 21 so that the bias voltage applied to the terahertz wave detection element 16a is increased by a predetermined value ⁇ V1 from the current value (step S103).
  • the signal processing / control unit 20 detects the signal amplitude of the reception signal output from the detection unit 16 (that is, the terahertz wave detection element 16a) (step S104).
  • the signal processing / control unit 20 compares the signal amplitude detected last time with the signal amplitude detected this time, and determines whether or not the signal amplitude has decreased (step S105).
  • the signal amplitude corresponds to the detection sensitivity of the terahertz wave detection element 16a.
  • the detection sensitivity of the terahertz wave detection element 16a will be described with reference to FIG. Note that points A and B in FIG. 5 correspond to points A and B in FIG. As can be seen from FIG. 5, the detection sensitivity of the resonant tunneling diode as the terahertz wave detection element 16a increases as the bias voltage increases. However, when the bias voltage exceeds the voltage corresponding to point B (that is, the voltage at which the detection sensitivity is maximized), the detection sensitivity of the resonant tunneling diode is rapidly lost. That is, the resonant tunneling diode does not function as a terahertz wave detecting element.
  • step S105 when the signal amplitude is reduced” in the determination in step S105 means a case where the bias voltage applied to the terahertz wave detection element 16a exceeds the voltage at which the detection sensitivity is maximized.
  • step S105: No the signal processing / control unit 20 performs the process of step S103.
  • the initial value of the signal amplitude detected last time may be set to zero, for example.
  • step S105 determines whether the signal amplitude has decreased (step S105: Yes). If it is determined in step S105 that the signal amplitude has decreased (step S105: Yes), the signal processing / control unit 20 performs bias so that the bias voltage is reduced by a predetermined value ⁇ V2 from the current value.
  • the voltage generator 21 is controlled (step S106).
  • the significance of reducing the bias voltage by a predetermined value ⁇ V2 from the current value will be described with reference to FIG.
  • a voltage corresponding to point B in FIG. 5 is applied as a bias voltage to the terahertz wave detection element 16a
  • the detection sensitivity of the terahertz wave detection element 16a can be maximized.
  • the bias voltage fluctuates during measurement of the measurement object 90, for example, the resonant tunnel diode may not function as the terahertz wave detection element 16a.
  • the bias voltage is lower than the voltage at which the detection sensitivity is maximized (the voltage corresponding to the range from point D to point E in FIG. 5) by a predetermined value ⁇ V2.
  • the bias voltage is reduced.
  • the predetermined value ⁇ V1 may be appropriately set in consideration of, for example, the time required for the bias voltage setting process, the voltage error of the bias voltage generation unit 21, and the like.
  • the predetermined value ⁇ V2 may be appropriately set in consideration of, for example, the predetermined value ⁇ V1 and the voltage-detection sensitivity characteristic related to the terahertz wave detection element 16a.
  • the above-described bias voltage setting process is repeated.
  • the bias voltage is reset (or calibrated) every time the imaging head unit 10 is positioned below the terahertz wave reflection unit 34. For this reason, an optimal bias voltage can always be applied to the terahertz wave detecting element 16a, and the stable measurement operation of the terahertz wave measuring apparatus 1 can be realized.
  • the “terahertz wave generating element 11a”, the “terahertz wave detecting element 16a”, the “terahertz wave reflecting unit 34”, the “signal processing / control unit 20”, and the “measurement object 90” according to the present embodiment are each represented by the present invention. Is an example of “electromagnetic wave generation unit”, “electromagnetic wave detection unit”, “reflection unit”, “adjusting means”, and “subject”.
  • the generation unit 11 may include a plurality of terahertz wave generation elements 11a and horn antennas 11b arranged in an array.
  • the detection unit 16 may include a plurality of terahertz wave detection elements 16a and horn antennas 16b arranged in an array.
  • a hemispherical or super hemispherical silicon lens may be used instead of the beam splitter 13, for example, a half mirror, a combination of a polarizer and a quarter wavelength plate, or the like can be applied.
  • FIGS. 6 to 8 A second embodiment of the terahertz wave measuring apparatus will be described with reference to FIGS.
  • the second embodiment is the same as the first embodiment described above except that the configuration of the terahertz wave measuring apparatus and part of the bias voltage setting process are different. Therefore, in the second embodiment, the description overlapping with that of the first embodiment is omitted, and the common portions in the drawing are denoted by the same reference numerals and only FIGS. 6 to 8 are basically different only. The description will be given with reference.
  • FIG. 6 is a schematic configuration diagram illustrating the configuration of the terahertz wave measuring apparatus according to the second embodiment.
  • FIG. 7 is a conceptual diagram showing the measurement operation of the terahertz wave measuring apparatus according to the second embodiment.
  • the terahertz wave measuring apparatus 2 includes an imaging head unit 10 ′, a signal processing / control unit 20, a bias voltage generation unit 21, a signal amplifier 22, a polygon mirror driving unit 24, a polygon mirror 41, and an objective lens 42. It is configured.
  • the polygon mirror 41 when the measurement target 90 is measured, the polygon mirror 41 is rotated by the polygon mirror drive unit 24, so that the terahertz wave emitted from the generation unit 11 scans the measurement target 90 (see FIG. 7).
  • the reflection surface of the polygon mirror 41 faces the imaging head unit 10 ′ during a part of the period, so that the terahertz wave emitted from the generation unit 11 is measured.
  • the object 90 is not irradiated, but is reflected by the polygon mirror 41 and enters the detector 16 (see FIG. 7D).
  • the bias voltage of the terahertz wave detection element 16a is set (or calibrated) based on the reception signal output from the detection unit 16.
  • the setting process of the bias voltage of the terahertz wave detection element 16a will be described with reference to the flowchart of FIG.
  • the signal processing / control unit 20 stores the current bias voltage as the memory 1 (that is, the value of the variable “memory 1” relating to the bias voltage is set as the current bias voltage) (step S201). ).
  • the signal processing / control unit 20 refers to, for example, the drive signal of the polygon mirror drive unit 24 to determine whether or not the polygon mirror 41 faces the imaging head unit 10 ′ (that is, emitted from the generation unit 11). Whether the incident angle of the terahertz wave with respect to the reflection surface of the polygon mirror 41 is 0 degree or not is determined (step S202).
  • step S202 If it is determined in step S202 that the polygon mirror 41 does not face the imaging head unit 10 '(step S202: No), the signal processing / control unit 20 performs the process of step S202 again. During the period until the polygon mirror 41 faces the imaging head unit 10 ′, the measurement object 90 is measured.
  • step S202 when it is determined in step S202 that the polygon mirror 41 is directly facing the imaging head unit 10 '(step S202: Yes), the signal processing / control unit 20 is applied to the terahertz wave detection element 16a.
  • the bias voltage generator 21 is controlled so as to initialize the bias voltage to be initialized (step S203).
  • the signal processing / control unit 20 controls the bias voltage generation unit 21 so that the bias voltage applied to the terahertz wave detection element 16a is increased by a predetermined value ⁇ V1 from the current value (step S204).
  • the signal processing / control unit 20 determines whether or not the polygon mirror 41 is facing the imaging head unit 10 '(step S205). In this determination, when it is determined that the polygon mirror 41 is directly facing the imaging head unit 10 ′ (step S205: Yes), the signal processing / control unit 20 detects the detection unit 16 (that is, the terahertz wave detection element 16a). The signal amplitude of the received signal output from is detected (step S206).
  • the signal processing / control unit 20 compares the signal amplitude detected last time with the signal amplitude detected this time, and determines whether or not the signal amplitude has decreased (step S207). In this determination, when it is determined that the signal amplitude has not decreased (step S207: No), the signal processing / control unit 20 performs the process of step S204.
  • step S207 determines whether the signal amplitude has decreased. If it is determined in step S207 that the signal amplitude has decreased (step S207: Yes), the signal processing / control unit 20 performs bias so that the bias voltage is reduced from the current value by a predetermined value ⁇ V2. The voltage generator 21 is controlled (step S208).
  • step S205 If it is determined in step S205 that the polygon mirror 41 does not face the imaging head unit 10 '(step S205: No), the signal processing / control unit 20 stores the current bias voltage as the memory 2. (That is, the value of the variable “memory 2” relating to the bias voltage is set as the current bias voltage) (step S209).
  • the signal processing / control unit 20 controls the bias voltage generation unit 21 so that the bias voltage returns to the value recorded in the memory 1 (step S210).
  • the terahertz wave emitted from the generation unit 11 is irradiated to the measurement object 90.
  • the measurement of the measurement object 90 is appropriately performed.
  • the signal processing / control unit 20 determines whether or not the polygon mirror 41 is facing the imaging head unit 10 '(step S211). In this determination, when it is determined that the polygon mirror 41 does not face the imaging head unit 10 ′ (step S211: No), the signal processing / control unit 20 performs the process of step S211 again. During the period until the polygon mirror 41 faces the imaging head unit 10 ′, the measurement object 90 is measured.
  • step S211 If it is determined in step S211 that the polygon mirror 41 is directly facing the imaging head unit 10 '(step S211: Yes), the signal processing / control unit 20 has the bias voltage recorded in the memory 2.
  • the bias voltage generation unit 21 is controlled so as to be a value (step S212), and the process of step S206 is performed.
  • the “polygon mirror 41” according to the present embodiment is another example of the “reflecting portion” according to the present invention.
  • the “polygon mirror drive unit 24” according to the present embodiment is an example of the “angle changing unit” according to the present invention.
  • the polygon mirror 41 is not limited to a quadrangle (see FIG. 6).
  • the objective lens 42 for example, an f- ⁇ lens may be used.

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

La présente invention concerne un dispositif d'inspection (1, 2) qui comprend : une unité de génération d'onde électromagnétique (11a) ; une unité de détection d'onde électromagnétique (16a) ; une partie réfléchissante (34, 41) qui peut réfléchir une onde électromagnétique ; et un moyen de réglage (20) qui entraîne l'introduction d'une onde électromagnétique émise par l'unité de génération d'onde électromagnétique dans l'unité de détection d'onde électromagnétique au moyen de la partie réfléchissante, pas par l'intermédiaire d'un sujet (90), pendant une période partielle dans une période d'inspection pendant laquelle le sujet est irradié avec l'onde électromagnétique et qui ajuste une tension de polarisation appliquée à l'unité de détection d'onde électromagnétique sur la base de la sensibilité de détection de l'unité de détection d'onde électromagnétique.
PCT/JP2016/069816 2016-07-04 2016-07-04 Dispositif et procédé d'inspection WO2018008070A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018525846A JP6761471B2 (ja) 2016-07-04 2016-07-04 検査装置及び方法
PCT/JP2016/069816 WO2018008070A1 (fr) 2016-07-04 2016-07-04 Dispositif et procédé d'inspection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2016/069816 WO2018008070A1 (fr) 2016-07-04 2016-07-04 Dispositif et procédé d'inspection

Publications (1)

Publication Number Publication Date
WO2018008070A1 true WO2018008070A1 (fr) 2018-01-11

Family

ID=60912536

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/069816 WO2018008070A1 (fr) 2016-07-04 2016-07-04 Dispositif et procédé d'inspection

Country Status (2)

Country Link
JP (1) JP6761471B2 (fr)
WO (1) WO2018008070A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020090784A1 (fr) * 2018-10-30 2020-05-07 パイオニア株式会社 Dispositif de détection d'ondes électromagnétiques et système de détection d'ondes électromagnétiques
EP3633333A4 (fr) * 2017-06-02 2021-03-10 Pioneer Corporation Appareil de détection d'onde électromagnétique et procédé de réglage de synchronisation d'acquisition de signal de détection
JPWO2020090783A1 (ja) * 2018-10-30 2021-09-24 パイオニア株式会社 電磁波検出システム
WO2024038784A1 (fr) * 2022-08-19 2024-02-22 国立大学法人大阪大学 Dispositif de détection de signal et procédé de détection de signal

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014106127A (ja) * 2012-11-28 2014-06-09 Pioneer Electronic Corp テラヘルツ波計測装置及び方法
JP2015087163A (ja) * 2013-10-29 2015-05-07 パイオニア株式会社 テラヘルツ波計測装置
JP2015180047A (ja) * 2014-02-28 2015-10-08 キヤノン株式会社 素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07260684A (ja) * 1994-03-28 1995-10-13 Nippon Telegr & Teleph Corp <Ntt> 高精度反射率測定方法及び測定器
JP3821364B2 (ja) * 2001-10-11 2006-09-13 株式会社島津製作所 光電測光の測定条件設定方法
JP2005321728A (ja) * 2004-05-11 2005-11-17 Olympus Corp 走査型顕微鏡の測定パラメータ決定方法
DE102005045163B4 (de) * 2005-09-21 2007-06-14 Leica Microsystems Cms Gmbh Vorrichtung und Verfahren zur Detektion mit einem Scanmikroskop
US8362430B1 (en) * 2007-09-05 2013-01-29 Jefferson Science Assosiates, LLC Method for large and rapid terahertz imaging
JP6099114B2 (ja) * 2011-06-14 2017-03-22 ローム株式会社 無線伝送装置
JP2015152347A (ja) * 2014-02-12 2015-08-24 住友電気工業株式会社 分光分析装置および分光分析方法
JP6475523B2 (ja) * 2015-03-13 2019-02-27 日本信号株式会社 制御回路及び検出器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014106127A (ja) * 2012-11-28 2014-06-09 Pioneer Electronic Corp テラヘルツ波計測装置及び方法
JP2015087163A (ja) * 2013-10-29 2015-05-07 パイオニア株式会社 テラヘルツ波計測装置
JP2015180047A (ja) * 2014-02-28 2015-10-08 キヤノン株式会社 素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3633333A4 (fr) * 2017-06-02 2021-03-10 Pioneer Corporation Appareil de détection d'onde électromagnétique et procédé de réglage de synchronisation d'acquisition de signal de détection
WO2020090784A1 (fr) * 2018-10-30 2020-05-07 パイオニア株式会社 Dispositif de détection d'ondes électromagnétiques et système de détection d'ondes électromagnétiques
JPWO2020090783A1 (ja) * 2018-10-30 2021-09-24 パイオニア株式会社 電磁波検出システム
WO2024038784A1 (fr) * 2022-08-19 2024-02-22 国立大学法人大阪大学 Dispositif de détection de signal et procédé de détection de signal

Also Published As

Publication number Publication date
JPWO2018008070A1 (ja) 2019-04-11
JP6761471B2 (ja) 2020-09-23

Similar Documents

Publication Publication Date Title
WO2018008070A1 (fr) Dispositif et procédé d&#39;inspection
US11914075B2 (en) Distance measurement apparatus
US8610073B2 (en) Monochromatic wavelength variable terahertz wave generation/detection system and method
US9131877B2 (en) Laser apparatus and photoacoustic apparatus
JP6538198B2 (ja) 測定装置及び方法
JP2016186424A (ja) 情報取得装置及び固定具
US8993967B2 (en) Electromagnetic wave detection device
JP5600374B2 (ja) テラヘルツ分光装置
JP2017020837A (ja) 異物検出装置及び方法
JP5000277B2 (ja) テラヘルツ電磁波発生装置およびテラヘルツ電磁波検出装置
JP2015087158A (ja) テラヘルツ波計測装置
JP4302662B2 (ja) 熱物性測定装置，熱物性測定方法
US20160010978A1 (en) Measurement apparatus and measuring method
JP2015141111A (ja) テラヘルツ波出力装置、テラヘルツ波出力方法、コンピュータプログラム及び記録媒体
JP7407683B2 (ja) 情報取得装置
US20240094595A1 (en) Dynamic correction for an acousto-optic deflector
JP7229828B2 (ja) 検出装置
US10732114B2 (en) System and method for measuring a physical parameter of a medium
JP2010534415A (ja) 波長監視における位置感知検出器
JP4649663B2 (ja) 光波面測定方法および装置
JP2019105649A (ja) 異物検出装置及び方法
JP2008058918A (ja) テラヘルツ電磁波発生方法及び分光・イメージング測定装置
JP6733195B2 (ja) 光走査装置
JP2020127010A (ja) テラヘルツ波出力装置
JP2018170519A (ja) テラヘルツ波出力装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16908114

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2018525846

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16908114

Country of ref document: EP

Kind code of ref document: A1