WO2017221772A1 - Adhésif à teneur en polydiméthylsiloxane - Google Patents

Adhésif à teneur en polydiméthylsiloxane Download PDF

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Publication number
WO2017221772A1
WO2017221772A1 PCT/JP2017/021834 JP2017021834W WO2017221772A1 WO 2017221772 A1 WO2017221772 A1 WO 2017221772A1 JP 2017021834 W JP2017021834 W JP 2017021834W WO 2017221772 A1 WO2017221772 A1 WO 2017221772A1
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WIPO (PCT)
Prior art keywords
adhesive
substrate
wafer
component
adhesive layer
Prior art date
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PCT/JP2017/021834
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English (en)
Japanese (ja)
Inventor
浩司 荻野
榎本　智之
徹也 新城
和宏 澤田
俊介 森谷
Original Assignee
日産化学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日産化学工業株式会社 filed Critical 日産化学工業株式会社
Priority to EP17815241.9A priority Critical patent/EP3477685A4/fr
Priority to US16/313,370 priority patent/US11183415B2/en
Priority to KR1020187035661A priority patent/KR102272726B1/ko
Priority to SG11201811340VA priority patent/SG11201811340VA/en
Priority to CN201780038781.5A priority patent/CN109417026B/zh
Priority to JP2018523935A priority patent/JP6916470B2/ja
Publication of WO2017221772A1 publication Critical patent/WO2017221772A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

Definitions

  • the present invention relates to an adhesive for fixing a wafer to a support during polishing of the back surface of the wafer and a laminate using the adhesive.
  • semiconductor wafers that have been integrated in a two-dimensional plane direction are required to have a semiconductor integration technique in which planes are further integrated (laminated) in a three-dimensional direction for the purpose of further integration.
  • This three-dimensional stacking is a technique in which multiple layers are integrated while being connected by a through silicon via (TSV).
  • TSV through silicon via
  • the semiconductor wafer before thinning (herein simply referred to as a wafer) is bonded to a support for polishing with a polishing apparatus.
  • the adhesion at that time is called temporary adhesion because it must be easily peeled off after polishing.
  • temporary adhesion When a large force is applied to the removal, the thinned semiconductor wafer may be cut or deformed. To prevent this, temporary bonding is required to be easily removed.
  • the semiconductor wafer is detached or displaced from the support due to polishing stress when the back surface of the semiconductor wafer is polished. Therefore, the performance required for temporary bonding is to withstand stress during polishing and to be easily removed after polishing. For example, the performance is required to have a high stress (strong adhesion) in the planar direction during polishing and a low stress (weak adhesion) in the longitudinal direction during removal.
  • an adhesion layer and a separation layer there are an adhesion layer and a separation layer, the separation layer is formed by plasma polymerization of dimethylsiloxane and mechanically separated after polishing (see Patent Document 1 and Patent Document 2), a support substrate and a semiconductor wafer Are bonded with an adhesive composition, the back surface of the semiconductor wafer is polished and then the adhesive is removed with an etching solution (see Patent Document 3), and the adhesive layer that bonds the support to the semiconductor wafer contains an alkenyl group
  • a method for forming a processed wafer by combining a polymer layer obtained by polymerizing an organopolysiloxane and a hydrosilyl group-containing organopolysiloxane with a platinum catalyst and a polymer layer comprising a thermosetting polysiloxane see Patent Document 4, Patent Document 5, Patent Document 6 and Patent Document 7) are disclosed.
  • the present invention relates to an adhesive that forms an adhesive layer between a support (support substrate) and a wafer, and the adhesive comprises a polyorganosiloxane component that is cured by a hydrosilylation reaction and a non-reactive polyorganosiloxane component.
  • an adhesive that can withstand stress during polishing of the back surface of a wafer, can be easily removed after polishing, and allows the peel surface to be selected depending on the heating direction during heat curing.
  • the present invention provides, as a first aspect, an adhesive for releasably bonding between a support and a circuit surface of a wafer to process the back surface of the wafer, and heating from the support side or the wafer when the adhesive is cured
  • the above-mentioned adhesive that makes it possible to control the peeling surface at the time of peeling by heating from the side
  • a second aspect is an adhesive for bonding the support surface to the circuit surface of the wafer surface, and can be temporarily bonded to process the back surface of the wafer, and can be peeled off by heat curing from the support side or the wafer side.
  • component (A) siloxane units (Q units) represented by SiO 2, siloxane units (M units) represented by R 1 R 2 R 3 SiO 1/2 , R 4 R 5 SiO Polysiloxane (A1) selected from the group consisting of siloxane units represented by 2/2 (D units), siloxane units represented by R 6 SiO 3/2 (T units), and combinations thereof
  • R 1 To R 6 each independently represents an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a monovalent chemical group that is a hydrogen atom, provided that each is a Si—C bond or Si—H bond.
  • the polysiloxane (A1) is a polyorganosiloxane (a1) (the polyorganosiloxane ( 1) siloxane units represented by SiO 2 (Q units), R 1 'R 2' R 3 ' siloxane units represented by SiO 1/2 (M' units), R 4 'R 5' SiO 2 / Selected from the group consisting of a siloxane unit represented by 2 (D ′ unit), a siloxane unit represented by R 6 ′ SiO 3/2 (T ′ unit), and combinations thereof, and R 1 ′ to R 6 ′.
  • a1 the polyorganosiloxane ( 1) siloxane units represented by SiO 2 (Q units), R 1 'R 2' R 3 ' siloxane units represented by SiO 1/2 (M' units), R 4 'R 5' SiO 2 / Selected from the group consisting of a siloxane unit represented by 2 (D ′ unit), a siloxane unit represented by R 6
  • the component (B) is adhesive according to the second aspect or the third aspect is a polydimethylsiloxane having a viscosity of 1100 mm 2 / s or 2000000mm 2 / s
  • component (B) adhesive according to the second aspect or the third aspect is a polydimethylsiloxane having a viscosity of 10000 mm 2 / s or 1000000mm
  • the adhesive according to any one of the second to sixth aspects further including an inhibitor (A3), As an eighth aspect, the adhesive according to any one of the first aspect to the seventh aspect, wherein the processing is polishing of the back surface of the wafer, As a ninth aspect, a first step of forming an adhesive layer by applying the adhesive according to any one of the first aspect to the eighth aspect on the surface of the first substrate, A method for forming a laminate including a second step of bonding the surface of a second substrate to the adhesive layer and a third step of heating from the first substrate side to cure the adhesive layer.
  • the bonding method according to the ninth aspect in which the first substrate is a support, the second substrate is a wafer, and the circuit surface of the wafer faces the first substrate in the second step.
  • the eleventh aspect is the bonding method according to the ninth aspect, in which the first base is a wafer, the second base is a support, and the circuit surface of the wafer faces the second base in the second step.
  • the joining method according to any one of the ninth aspect to the eleventh aspect in which heating is performed at 120 to 260 ° C.
  • the peeling method according to the thirteenth aspect in which the first substrate is a support, the second substrate is a wafer, and the circuit surface of the wafer faces the first substrate in the second step,
  • the temperature of the first substrate is 120 to
  • the peeling method described As a seventeenth aspect, the peeling method according to any one of the thirteenth to sixteenth aspects, wherein the processing in the fourth step is polishing of the back surface of the first base or the second base, As an eighteenth aspect, the peeling method according to any one of the thirteenth to seventeenth aspects, in which the second base and the adhesive layer are further separated after being peeled between the first base and the adhesive layer, As a nineteenth aspect, separation of the second substrate and the adhesive layer causes the tape to adhere to the adhesive surface, and the second substrate and the adhesive layer are separated by peeling at an angle of 60 to 180 degrees with respect to the second substrate surface.
  • an adhesive is applied to the surface of the first substrate by any one of the ninth to twelfth aspects to form an adhesive layer. After the surfaces of the two substrates are bonded to the adhesive layer and the back surface of the first substrate or the second substrate is polished, between the first substrate and the adhesive layer by the method according to any one of the thirteenth to nineteenth aspects It is the processing method of the laminated body which peels.
  • the adhesive charged between the support and the circuit surface of the wafer comprises a component (A) that crosslinks and cures by a hydrosilylation reaction, and a component (B) that contains non-crosslinkable polydimethylsiloxane.
  • a laminate for processing the back side of the wafer opposite to the circuit surface of the wafer is formed, and by combining polysiloxane of a specific component, the circuit surface of the wafer and the spin coat property to the support are achieved.
  • the adhesive of the present invention can be used in the direction of heating when the adhesive layer formed by applying the adhesive is cured when the wafer and the support are peeled off after processing the back surface (opposite side of the circuit surface) of the wafer. It can be selectively peeled off.
  • the adhesive of the present invention has an effect that the release surface can be selected at the time of peeling by heating from the support side or heating from the wafer side when the adhesive layer formed by applying the adhesive is cured.
  • the adhesive contains two types of polyorganosiloxane, that is, the component (A) that cures by hydrosilylation reaction and the component (B) that contains polydimethylsiloxane, the distribution of each component in the adhesive layer By causing the difference, the peeled surface can be controlled. It is also possible to form an adhesive containing component (A), component (B), and other polyorganosiloxane.
  • the wafer is thinned by polishing. Thereafter, a through silicon via (TSV) or the like is formed, and then the thinned wafer is peeled off from the support to form a laminated body of wafers, which is three-dimensionally mounted.
  • TSV through silicon via
  • a wafer back electrode and the like are also formed before and after that. Heat of 250 to 350 ° C. is applied to the wafer thinning and TSV process while being bonded to the support, and the laminate using the adhesive of the present invention has such heat resistance.
  • the present invention is an adhesive for releasably bonding between a support and a circuit surface of a wafer to process the back surface of the wafer, and the component (A) and polydimethylsiloxane that the adhesive is cured by a hydrosilylation reaction It is the adhesive agent containing the component (B) containing.
  • the present invention is an adhesive for releasably bonding between the support and the circuit surface of the wafer to process the back surface of the wafer.
  • the adhesive is cured, the adhesive is heated from the support side or from the wafer side. It is an adhesive that can select a peeling surface at the time of peeling by heating.
  • peeling surface at the time of peeling becomes selectable (controllable), in a laminate composed of a wafer, an adhesive layer, and a support, when the adhesive layer is heated and cured from the wafer side, the peeling is separated from the wafer. It can be peeled preferentially between the adhesive layers, and when heated from the support side, it can be peeled preferentially between the support and the adhesive layer. That is, the fact that the separation surface at the time of separation can be selected means that separation is possible at the interface between the heated side (support or wafer) and the adhesive layer.
  • peelable means that the peel strength is lower than the other peeled portions, and the peelable material is easy to peel.
  • the wafer back side is placed on the coater, adhesive is applied to the circuit surface by spin coating to form an adhesive layer, a support is placed on it, and the wafer back side is heated with a hot plate. After the adhesive layer is cured to form a laminate, the back surface of the wafer is processed (polished). After that, when the wafer is removed from the laminate, the force required for peeling between the wafer and the adhesive layer is smaller than the force required for peeling between the support and the adhesive layer, giving priority to the wafer and the adhesive layer. Can be peeled off.
  • the said adhesive agent is an adhesive agent containing the component (A) hardened
  • the thickness of the wafer can be reduced by temporarily bonding the support and the wafer with the adhesive and processing the back surface opposite to the circuit surface of the wafer by polishing or the like.
  • the temporary bonding is performed when the back surface of the wafer is polished, and the support and the thinned wafer can be separated after polishing the back surface of the wafer.
  • the adhesive layer is formed of an adhesive.
  • the adhesive contains component (A) and component (B), and can further contain other additives.
  • the polysiloxane (A1) contains a polyorganosiloxane (a1) and a polyorganosiloxane (a2).
  • the polyorganosiloxane (a1) is made of a siloxane unit having an alkyl group having 1 to 10 carbon atoms and an alkenyl group having 2 to 10 carbon atoms as substituents, and the polyorganosiloxane (a2) has 1 to 1 carbon atoms. It consists of siloxane units with 10 alkyl groups and hydrogen atoms as substituents.
  • the alkenyl group and the Si—H group form a crosslinked structure by a hydrosilylation reaction with the platinum group metal catalyst (A2), and the adhesive is cured.
  • Polyorganosiloxanes (a1) siloxane units (Q units) represented by SiO 2 is, R 1 'R 2' R 3 ' siloxane units represented by SiO 1/2 (M' units), R 4 'R 5 It is selected from the group consisting of a siloxane unit represented by 'SiO 2/2 (D' unit), a siloxane unit represented by R 6 'SiO 3/2 (T' unit), and combinations thereof.
  • a combination of (Q unit and M ′ unit) and (D ′ unit and M ′ unit), a combination of (T ′ unit and M ′ unit) and (D ′ unit and M ′ unit), (Q unit and A polyorganosiloxane (a1) is obtained by combining a combination of (T ′ unit and M ′ unit) and (T ′ unit and M ′ unit), a combination of (T ′ unit and M ′ unit), and a combination of (Q unit and M ′ unit). ) Is possible.
  • the polyorganosiloxane (a2) is a siloxane unit represented by SiO 2 (Q unit), a siloxane unit represented by R 1 ′′ R 2 ′′ R 3 ′′ SiO 1/2 (M ′′ unit), and R ′′ R 5 ′′. It is selected from the group consisting of siloxane units represented by SiO 2/2 (D ′′ units), siloxane units represented by R 6 ′′ SiO 3/2 (T ′′ units), and combinations thereof.
  • the polyorganosiloxane (a2) can be produced by a combination of units and D ′′ units, a combination of (Q units and M ′′ units), or a combination of (Q units, T ′′ units and M ′′ units).
  • alkenyl group having 2 to 10 carbon atoms examples include ethenyl group, 1-propenyl group, 2-propenyl group, 1-methyl-1-ethenyl group, 1-butenyl group, 2-butenyl group, 3-butenyl group, 2-methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl-1-propenyl group, 1-methyl-2-propenyl group, 1-pentenyl group, 2-pentenyl group 3-pentenyl group, 4-pentenyl group, 1-n-propylethenyl group, 1-methyl-1-butenyl group, 1-methyl-2-butenyl group, 1-methyl-3-butenyl group, 2-ethyl -2-propenyl group, 2-methyl-1-butenyl group, 2-methyl-2-butenyl group, 2-methyl-3-butenyl group, 3-methyl-1-butenyl group, 3-methyl-2-butenyl group 3-methyl-3methyl
  • an ethenyl group that is, a vinyl group
  • a 2-propenyl group that is, an allyl group
  • the alkyl group having 1 to 10 carbon atoms is, for example, methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, t-butyl group, n -Pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n- Propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, n-hexyl group, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, 3-methyl- n-pentyl group
  • the polyorganosiloxane (a1) is composed of siloxane units having an alkyl group having 1 to 10 carbon atoms and an alkenyl group having 2 to 10 carbon atoms as substituents, and the alkyl group having 1 to 10 carbon atoms is a methyl group.
  • the alkenyl group having 2 to 10 carbon atoms is an ethenyl group, that is, a vinyl group, and the ratio of the alkenyl group to all substituents represented by R 1 ′ to R 6 ′ is 0.1 mol% to 50. It can be 0 mol%, preferably 0.5 mol% to 30.0 mol%, and the remaining R 1 ′ to R 6 ′ can be alkyl groups.
  • the polyorganosiloxane (a2) is composed of an alkyl group having 1 to 10 carbon atoms and a siloxane unit having a hydrogen atom as a substituent, the alkyl group having 1 to 10 carbon atoms is a methyl group, A Si—H structure is formed.
  • the proportion of hydrogen atoms, that is, Si—H groups in the total substituents represented by R 1 ′′ to R 6 ′′ is 0.1 mol% to 50.0 mol%, preferably 10.0 mol% to 40.0 mol. %, And the remaining R 1 ′′ to R 6 ′′ can be alkyl groups.
  • the polyorganosiloxane (a1) and the polyorganosiloxane (a2) have a molar ratio of hydrogen atoms represented by alkenyl groups and Si—H groups of 2.0: 1.0, preferably 1.5: 1.0. It can be contained in the range.
  • the polyorganosiloxane (a1) and the polyorganosiloxane (a2) can be used in a weight average molecular weight range of 500 to 1000000 or 5000 to 50000, respectively. These molecular weights are molecular weights obtained in terms of polystyrene by GPC analysis.
  • the polyorganosiloxane (a1) and the polyorganosiloxane (a2) have a viscosity in the range of 10 mPa ⁇ s to 1,000,000 mPa ⁇ s, preferably 10 mPa ⁇ s to 100,000 mPa ⁇ s, more preferably 10 mPa ⁇ s to 10,000 mPa ⁇ s. Can be used. These viscosities can be determined by measuring at 25 ° C. with an E-type rotational viscometer.
  • Component (A) contains a platinum group metal catalyst (A2).
  • a platinum-based metal catalyst is a catalyst for promoting the hydrosilylation addition reaction between an alkenyl group and a Si—H group, and is a reaction of platinum black, platinous chloride, chloroplatinic acid, chloroplatinic acid and a monohydric alcohol. Products, complexes of chloroplatinic acid and olefins, platinum bisacetoacetate, and the like. Examples of the complex of platinum and olefins include a complex of divinyltetramethyldisiloxane and platinum.
  • the platinum catalyst is added in an amount of 1.0 to 500.0 ppm, preferably 1.0 to 50.0 ppm as platinum metal with respect to the total amount of polyorganosiloxane (a1) and polyorganosiloxane (a2). can do.
  • Component (A) can further contain alkynyl alcohol as an inhibitor (A3) that suppresses the progress of the hydrosilylation reaction.
  • alkynyl alcohol as an inhibitor (A3) that suppresses the progress of the hydrosilylation reaction.
  • the inhibitor include 1-ethynyl-1-cyclohexanol. These inhibitors can be added in the range of 500.0 to 10,0000.0 ppm, preferably 1000.0 to 10000.0 ppm, based on the total amount of polyorganosiloxane (a1) and polyorganosiloxane (a2).
  • the polyorganosiloxane used in the component (B) of the present invention contains a siloxane unit (D unit) represented by RRSiO 2/2 (wherein R is bonded to a silicon atom through a Si—C bond).
  • R is an alkyl group having 1 to 10 carbon atoms, and the above-mentioned examples can be given.
  • R is a methyl group
  • Polydimethylsiloxane can be mentioned.
  • the polysiloxane used for component (B) contains siloxane units (D units), but may contain Q units, M units, and T units.
  • D units siloxane units
  • Q units Q units
  • M units M units
  • T units T units
  • Component (B) is 1100 mm 2 / s or 2000000mm 2 / s, preferably be a polydimethylsiloxane having a viscosity of 10000 mm 2 / s or 1000000mm 2 / s.
  • Component (B) is a dimethyl silicone oil made of polydimethylsiloxane.
  • the kinematic viscosity can be measured with a kinematic viscometer. It can also be determined by dividing the viscosity (mPa ⁇ s) by the density (g / cm 3 ).
  • the ratio of the component (A) and the component (B) in the adhesive can be used at an arbitrary ratio.
  • the ratio of the component (A) and the component (B) in the adhesive can be set to an arbitrary ratio.
  • the ratio of the component (A) and the component (B) in the adhesive can be 80:20 to 20:80 in mass%.
  • it is preferable that the ratio of the component (A) and component (B) in an adhesive agent is 80:20 thru
  • the first step of forming the adhesive layer by applying the adhesive to the surface of the first substrate examples include a second step of bonding the surface of the second substrate to the adhesive layer and a third step of heating from the first substrate side to cure the adhesive layer.
  • the adhesive is cured by heating.
  • substrate is a support body, and the circuit surface of a wafer faces a 2nd base
  • An example of the wafer is a silicon wafer having a diameter of 300 mm and a thickness of about 770 ⁇ m.
  • Examples of the support (carrier) include a glass wafer and a silicon wafer having a diameter of about 300 mm and a thickness of about 700 mm.
  • Adhesive is adhered to the surface of the support using, for example, a spin coater, an adhesive layer is formed, and the adhesive is sandwiched between the support surface and the circuit surface of the wafer surface, and heated at a temperature of 120 to 260 ° C. Then, the adhesive can be cured to form a laminate.
  • an adhesive is attached to the circuit surface of the wafer surface with the spin coater on the back side of the wafer to form an adhesive layer, and the support is bonded so as to sandwich the adhesive, and heated at a temperature of 120 to 260 ° C. Then, the adhesive can be cured to form a laminate.
  • the heating temperature begins to cure from about 120 ° C., and can be set to a temperature of 260 ° C. or higher. However, from the viewpoint of heat resistance of the circuit surface (device surface) of the wafer, 260 ° C. or lower is preferable, and 150 ° C.
  • the temperature is more preferably about 230 ° C., more preferably about 190 ° C. to 200 ° C.
  • the heating time is preferably 1 minute to 30 minutes, 3 minutes or more from the viewpoint of the degree of curing of the adhesive, and 10 minutes or less from the viewpoint of throughput.
  • a solvent can be added to the adhesive to adjust the viscosity.
  • the solvent include hydrocarbon solvents such as isoparaffin, p-menthane, hexane, and undecane, aromatic hydrocarbons such as toluene, mesitylene, and p-cymene, ester solvents such as butyl acetate, and halogen solvents such as chloroform. Can be mentioned.
  • the addition amount can be contained in an arbitrary ratio with respect to the adhesive.
  • Heating can be performed from either the first substrate side or the second substrate side using a hot plate.
  • the support and the wafer formed so as to sandwich the adhesive layer can be combined with each other under reduced pressure (for example, in a reduced pressure state of 10 Pa to 10000 Pa) to form a laminate.
  • reduced pressure for example, in a reduced pressure state of 10 Pa to 10000 Pa
  • the support and the wafer can be combined by heating only the lower surface under reduced pressure, and the heating can be performed at 120 ° C. to 260 ° C., for example. This heating cures the adhesive layer.
  • a peeling method includes a fourth step of processing the laminate, and a fifth step of peeling between the first substrate and the cured adhesive layer. Examples include the above-described peeling method in which the first substrate is a support, the second substrate is a wafer, and the circuit surface of the wafer faces the first substrate in the second step. In addition, the above-described peeling method is exemplified in which the first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the second substrate in the second step.
  • the thickness of the adhesive layer formed by applying the above adhesive can be 5 to 500 ⁇ m, preferably 10 to 200 ⁇ m, more preferably 20 to 150 ⁇ m, still more preferably 30 to 120 ⁇ m, and particularly preferably 30 to 70 ⁇ m. .
  • the heating is performed from the first substrate side using a hot plate, the temperature of the first substrate is 120 to 260 ° C., and the temperature difference between the first substrate and the second substrate Can be set to 2 to 20 ° C., preferably 2 to 10 ° C., more preferably 3 to 8 ° C. Since the first substrate is in contact with the hot plate surface, the temperature on the hot plate is considered to be the temperature of the first substrate.
  • the second substrate has a temperature lower than that of the first substrate in the above temperature difference range.
  • the cause of the temperature difference is that heating from the first substrate side causes a temperature difference due to heat conduction during curing of the adhesive in the laminate composed of the first substrate, the adhesive, and the second substrate. It is considered that this temperature difference causes an uneven distribution of components, and the separation surface can be selected at the time of separation.
  • the hot plate is a contact heating device using a heater or the like, and various heating devices having such a function can be used.
  • the processing on the opposite side of the circuit surface of the wafer includes thinning of the wafer by polishing. Thereafter, a through silicon via (TSV) or the like is formed, and then the thinned wafer is peeled off from the support to form a laminated body of wafers, which is three-dimensionally mounted. In addition, a wafer back electrode and the like are also formed before and after that. Heat of 250 to 350 ° C. is applied to the wafer thinning and TSV process while being bonded to the support. However, the laminate comprising the wafer, the adhesive layer and the support of the present invention has heat resistance. is doing.
  • a wafer having a diameter of about 300 mm and a thickness of about 770 ⁇ m can be thinned to a thickness of about 80 ⁇ m to 4 ⁇ m by polishing the back surface opposite to the circuit surface. After bonding and processing the back surface (polishing), the support and the wafer are peeled off.
  • the peeling method include solvent peeling, laser peeling, mechanical peeling with equipment having sharp parts, peeling that peels off between the support and the wafer, and the like.
  • the first substrate surface can be cleaned with a cleaner such as a solvent.
  • a cleaner solution containing a fluoride salt such as quaternary ammonium fluoride, an organic base such as diazabicycloundecene, and an organic solvent can be used.
  • the adhesive remains on the second substrate side, but the second substrate and the adhesive are separated in order to regenerate the second substrate. If the second substrate is a support, the adhesive is separated to regenerate the support.
  • a solvent separation, a tape peeling method or the like is used for the separation of the adhesive.
  • the separation of the second substrate and the adhesive is performed by, for example, attaching a commercially available tape to the adhesive surface on the second substrate, and peeling the second substrate and the adhesive at an angle of 60 degrees to 180 degrees with respect to the second substrate surface.
  • a tape peeling method can be used.
  • the present invention is a method for processing a laminate that is bonded by the above method, and after the back surface of the wafer is polished, is peeled by the above method.
  • Adhesive Component (A) 22.49 kg of a base polymer (made by Wacker Chemi) comprising a vinyl group-containing linear polydimethylsiloxane having a viscosity of 200 mPa ⁇ s and a vinyl group-containing MQ resin as the polysiloxane (a1).
  • Adhesive 1 Component (A) 99% by mass of polyorganosiloxane (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK1000000, viscosity 1000000 mm 2 / S) 1 part by mass (ratio of component (B) in component (A) and component (B)) to 100 parts by mass of an isoparaffinic solvent (trade name Isoper-E, Ando Parachemy Co., Ltd.) Then, 1.5 parts by mass were added and mixed for 5 minutes with a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.) to produce an adhesive 1.
  • a rotating / revolving mixer trade name ARE-500, manufactured by Shinky Co., Ltd.
  • Adhesive 2 Component (A) 90% by mass of polyorganosiloxane (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK1000000, viscosity 1000000 mm 2 / S) 15 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent is added to 100 parts by mass of a mixture composed of 10% by mass (the ratio of the (A) component and the (B) component in the (B) component). Then, the mixture was mixed for 5 minutes using a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.) to produce an adhesive 2.
  • Adhesive 3 Component (A) polyorganosiloxane 85% by mass (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK1000000, viscosity 1000000 mm 2 / S) 15 parts by mass (ratio of the component (B) in the component (A) and the component (B)) to 100 parts by mass of the mixture, 22.5 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent Was added and mixed for 5 minutes with a rotation / revolution mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.) to produce an adhesive 3.
  • a rotation / revolution mixer trade name ARE-500, manufactured by Shinky Co., Ltd.
  • Adhesive 4 Component (A) polyorganosiloxane 80% by mass (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK1000000, viscosity 1000000 mm 2 / S) 30 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent is added to 100 parts by mass of a mixture composed of 20% by mass (the ratio of the (A) component and the (B) component in the (B) component). Then, an adhesive 4 was produced by mixing for 5 minutes using a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Corporation).
  • Adhesive 5 Component (A) 70% by mass of polyorganosiloxane (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK1000000, viscosity 1000000 mm 2 / S) 45 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent is added to 100 parts by mass of a mixture consisting of 30% by mass (the ratio of the (A) component and the (B) component in the (B) component). Then, an adhesive 5 was produced by mixing for 5 minutes with a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.).
  • Adhesive 6 Component (A) 60% by mass of polyorganosiloxane (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK1000000, viscosity 1000000 mm 2 / S) 60 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent is added to 100 parts by mass of a mixture composed of 40% by mass (the ratio of the (A) component and the (B) component in the (B) component). Then, an adhesive 6 was produced by mixing for 5 minutes with a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.).
  • Adhesive 7 Component (A) polyorganosiloxane 50 mass% (the ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK1000000, viscosity 1000000 mm 2 / S) Addition of 75 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent to 100 parts by mass of a mixture comprising 50% by mass (the ratio of the (A) component and the (B) component in the (B) component) Then, the mixture was mixed for 5 minutes with a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.) to produce an adhesive 7.
  • a rotating / revolving mixer trade name ARE-500, manufactured by Shinky Co., Ltd.
  • Adhesive 9 Component (A) Polyorganosiloxane 30% by mass (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK1000000, viscosity 1000000 mm 2 / S) Addition of 105 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent to 100 parts by mass of a mixture composed of 70% by mass (the ratio of the component (B) in the component (A) and the component (B)) Then, an adhesive 9 was produced by mixing for 5 minutes with a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Corporation).
  • Adhesive 10 Component (A) 20% by mass of polyorganosiloxane (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK1000000, viscosity 1000000 mm 2 / S) Addition of 120 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent to 100 parts by mass of a mixture composed of 80% by mass (the ratio of the (A) component and the (B) component in the (B) component) Then, the mixture was mixed for 5 minutes with a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.) to produce an adhesive 10.
  • a rotating / revolving mixer trade name ARE-500, manufactured by Shinky Co., Ltd.
  • Adhesive 11 Component (A) 10% by mass of polyorganosiloxane (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK1000000, viscosity 1000000 mm 2 / S) Addition of 135 parts by weight of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent to 100 parts by weight of a mixture consisting of 90 parts by weight (the ratio of the (A) component and the (B) component in the (B) component) Then, the mixture was mixed for 5 minutes with a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.) to produce an adhesive 11.
  • a rotating / revolving mixer trade name ARE-500, manufactured by Shinky Co., Ltd.
  • (Adhesive 12) Component (A) polyorganosiloxane 70 mass% (the ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK300000, viscosity 300000 mm 2 / S) 45 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent is added to 100 parts by mass of a mixture consisting of 30% by mass (the ratio of the (A) component and the (B) component in the (B) component). Then, the mixture was mixed for 5 minutes using a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.) to produce an adhesive 12.
  • (Adhesive 13) Component (A) 70% by mass of polyorganosiloxane (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK100000, viscosity 100000 mm 2 / S) 45 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent is added to 100 parts by mass of a mixture consisting of 30% by mass (the ratio of the (A) component and the (B) component in the (B) component). Then, the mixture was mixed for 5 minutes with a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.) to produce an adhesive 13.
  • a rotating / revolving mixer trade name ARE-500, manufactured by Shinky Co., Ltd.
  • Adhesive 14 Component (A) 70% by mass of polyorganosiloxane (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK60000, viscosity 60000 mm 2) / S) 45 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent is added to 100 parts by mass of a mixture consisting of 30% by mass (the ratio of the (A) component and the (B) component in the (B) component). Then, the mixture was mixed for 5 minutes with a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.) to produce an adhesive 14.
  • a rotating / revolving mixer trade name ARE-500, manufactured by Shinky Co., Ltd.
  • Adhesive 15 Component (A) 70% by mass of polyorganosiloxane (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK10000, viscosity 10000 mm 2 / S) 45 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent is added to 100 parts by mass of a mixture consisting of 30% by mass (the ratio of the (A) component and the (B) component in the (B) component). Then, the mixture was mixed for 5 minutes with a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.) to produce an adhesive 15.
  • a rotating / revolving mixer trade name ARE-500, manufactured by Shinky Co., Ltd.
  • Adhesive 16 Component (A) 70% by mass of polyorganosiloxane (ratio of component (A) in component (A) and component (B)) and component (B) polyorganosiloxane (manufactured by Wacker Chemi, trade name AK1000, viscosity 1000 mm 2 / S) 45 parts by mass of Isoper-E (Ando Parachemy Co., Ltd.) as a solvent is added to 100 parts by mass of a mixture consisting of 30% by mass (the ratio of the (A) component and the (B) component in the (B) component). Then, the mixture was mixed for 5 minutes with a rotating / revolving mixer (trade name ARE-500, manufactured by Shinky Co., Ltd.) to produce an adhesive 16.
  • a rotating / revolving mixer trade name ARE-500, manufactured by Shinky Co., Ltd.
  • Adhesive 17 The adhesive agent 17 which consists only of component (A) polyorganosiloxane was prepared.
  • Example 1 On the 300 mm silicon wafer (thickness: 770 ⁇ m) as the wafer on the device side, the above adhesives (1) to (11) and (17) are each formed into a film of about 50 ⁇ m by spin coating to form a temporary adhesive layer. A film having a thickness was formed on the circuit surface of the wafer to form adhesive layers (1) to (11) and (17), respectively.
  • the peeling interface was confirmed in the case of confirmation of peelability.
  • “device” occurs at the interface between the carrier-side wafer (support) and the adhesive layer, and the release surface can be selected.
  • “carrier”, “ ⁇ ” indicates that the separation interface could not be selected
  • “ ⁇ ” indicates that cohesive failure occurred in the adhesive layer
  • “ ⁇ ” indicates that the separation could not be performed.
  • Table 1 According to the results of Table 1 relating to the laminate, the adhesive layers (1) to (3) and (17) formed by the adhesives (1) to (3) and (17) have good adhesiveness but are not peeled off. Good results were not obtained.
  • the adhesive layers (4) to (7) formed by the adhesives (4) to (7) showed good results in terms of adhesiveness, peelability, and selectivity of the peel interface.
  • the adhesive layers (8) to (11) formed by the adhesives (8) to (11) were good, but good results were not obtained in the selectivity of the peel interface.
  • Example 2 On the 300 mm silicon wafer (thickness: 770 ⁇ m) as the wafer on the device side, the above adhesive (5) is formed on the circuit surface of the wafer by spin coating to form a temporary adhesive layer in a film thickness of about 50 ⁇ m. Films were formed as adhesive layers (5-1) to (5-2), respectively. A wafer having this adhesive layer and a 300 mm silicon wafer (thickness: 770 ⁇ m) as a carrier-side wafer (support) and a vacuum bonding apparatus (manufactured by SUSS Microtech Co., Ltd., manual) Bonding was performed in a bonder) to prepare a laminate. Thereafter, heat treatment was performed on a hot plate at 190 ° C. for 10 minutes.
  • the device heat-treated with the device side wafer down is denoted as “device” (adhesive layer (5-1)), and the material heat-treated with the carrier side wafer (support) down is “carrier”. (Adhesive layer (5-2)).
  • the force required for peeling was measured with a peeling apparatus (manufactured by SUSS Microtec Co., Ltd., manual debonder). For those that could be peeled off, the force required for peeling was shown as a numerical value as a good result, and those that could not be peeled were indicated as “x” as defective.
  • the peeling interface was confirmed in the case of confirmation of peelability.
  • Example 3 On the 300 mm silicon wafer (thickness: 770 ⁇ m) as the wafer on the device side, the above adhesive (5) is formed on the circuit surface of the wafer by spin coating to form a temporary adhesive layer in a film thickness of about 50 ⁇ m.
  • the adhesive layers (5-3) to (5-4) were formed, respectively.
  • the device heat-treated with the device-side wafer down is referred to as “device” (adhesive layer (5-3)), and the material heat-treated with the carrier-side wafer (support) down is “carrier”. (Adhesive layer (5-4)).
  • the force required for peeling was measured with a peeling apparatus (manufactured by SUSS Microtec Co., Ltd., manual debonder). For those that could be peeled off, the force required for peeling was shown as a numerical value as a good result, and those that could not be peeled were indicated as “x” as defective.
  • the peeling interface was confirmed in the case of confirmation of peelability.
  • peeling occurs at the interface between the device side wafer and the adhesive layer, and the release surface can be selected, it occurs at the interface between the "device” and the carrier side wafer (support) and the adhesive layer.
  • “carrier” was indicated, and “x” was indicated as a failure when the peeling interface could not be selected.
  • Table 3 In the results of Table 3 relating to the laminate, the adhesive layers (5-3) to (5-4) formed with the adhesive (5) showed good results in peelability.
  • the heat treatment is performed in an inert gas oven in which heat is uniformly applied to the laminate when the adhesive is cured, a favorable result is not obtained in the selectivity of the peeling interface.
  • Example 4 On the 300 mm silicon wafer (thickness: 770 ⁇ m) as the wafer on the device side, the above adhesive (5) is formed on the circuit surface of the wafer by spin coating to form a temporary adhesive layer in a film thickness of about 50 ⁇ m. Films were formed as adhesive layers (5-5) to (5-8), respectively. Vacuum bonding apparatus (manufactured by SUSS Microtech Co., Ltd.) with a wafer having this adhesive layer and a 300 mm glass wafer (thickness: 700 ⁇ m) as a carrier-side wafer (support) sandwiching the resin (adhesive) Bonding was performed in a bonder) to prepare a laminate.
  • Vacuum bonding apparatus manufactured by SUSS Microtech Co., Ltd.
  • heat treatment was performed on a hot plate at 190 ° C. for 10 minutes.
  • the device heat-treated with the device side wafer down is denoted as “device” (adhesive layer (5-5)), and the material heat-treated with the carrier side wafer (support) down is “carrier”. (Adhesive layer (5-6)).
  • a heat treatment was performed on a hot plate at 250 ° C. for 1 hour as a heat resistance test.
  • a heat resistance test was performed with the device side wafer down, and those that did not show any defects such as voids were marked as “device” (adhesive layer (5-7)) as a good result.
  • the peeling interface can be selected depending on the heat-treated surface when the adhesive is cured.
  • Example 5 As a wafer on the device side, a 300 mm Cu pillar manufactured by Kiyokawa Plating Co., Ltd. (thickness: 770 ⁇ m, chip size: 10 mm, Cu pillar diameter: 40 ⁇ m, Cu pillar height: 25 ⁇ m, bump pitch: 100 ⁇ m), temporary adhesive layer
  • the above adhesive (5) was formed on the circuit surface of the wafer by spin coating to a thickness of about 50 ⁇ m to form adhesive layers (5-9) to (5-11), respectively.
  • the force required for peeling was shown as a numerical value as a good result, and those that could not be peeled were indicated as “x” as defective.
  • the peeling interface was confirmed in the case of confirmation of peelability. When peeling occurs at the interface between the device side wafer and the adhesive layer and the release surface can be selected well, it occurs at the interface between the device and the carrier side wafer (support) and the adhesive layer. In the case where the release interface was not selected, “carrier” was indicated, and “x” was indicated as a failure when the peeling interface could not be selected. The results are shown in Table 5.
  • the adhesive layers (5-9) to (5-10) formed by the adhesive (5) have good peelability, and the structure is applied to the surface of the device-side wafer. Even if it has, it has been shown that the peeling interface can be selected by the heat-treated surface when the adhesive is cured. Furthermore, in the adhesive layer (5-11) formed by the adhesive (5), the peelability is good even when heat treatment is performed on the device side wafer and then a heat resistance test is performed using an inert gas oven. It was confirmed that the peeling interface can be selected by the heat-treated surface when the adhesive is cured.
  • Various wafers as device-side wafers for example, 300 mm PI wafer (thickness: 770 ⁇ m, base: SiN + PI, scribe line: width 100 mm, 15 mm pitch) manufactured by Global Net Co., Ltd., 300 mm glass wafer (thickness: 700 ⁇ m) manufactured by Corning Spin to form a temporary adhesive layer on a 300 mm Cu pillar wafer (thickness: 770 ⁇ m, chip size: 25 mm, Cu pillar diameter: 75 ⁇ m, Cu pillar + SnAg capping height: 45 ⁇ m, bump pitch: 150 ⁇ m) manufactured by Waltz, Inc.
  • Each of the above adhesives (5) was formed on the circuit surface of the wafer with a film thickness of about 50 ⁇ m by coating to form adhesive layers (5-12) to (5-14), respectively.
  • a vacuum bonding apparatus manufactured by SUSS Microtech Co., Ltd., manual bonder
  • heat treatment was performed at 190 ° C. for 10 minutes so that the device-side wafer was on the hot plate.
  • the force required for peeling was measured with a peeling apparatus (manufactured by SUSS Microtec Co., Ltd., manual debonder). For those that could be peeled off, the force required for peeling was shown as a numerical value as a good result, and those that could not be peeled were indicated as “x” as defective. Moreover, the peeling interface was confirmed in the case of confirmation of peelability. When peeling occurs at the interface between the device-side wafer and the adhesive layer and the release surface can be selected, "device" occurs at the interface between the carrier-side wafer (support) and the adhesive layer, and the release surface can be selected.
  • Example 7 A circuit surface of the wafer with a film thickness of about 30 or 70 ⁇ m by spin coating to form a temporary adhesive layer on a 300 mm silicon wafer (thickness: 770 ⁇ m) as a device-side wafer.
  • the adhesive layers (5-15) to (5-16) were formed respectively.
  • a vacuum bonding apparatus manufactured by SUSS Microtech Co., Ltd., manual bonder
  • the force required for peeling was measured with a peeling apparatus (manufactured by SUSS Microtec Co., Ltd., manual debonder). For those that could be peeled off, the force required for peeling was shown as a numerical value as a good result, and those that could not be peeled were indicated as “x” as defective. Moreover, the peeling interface was confirmed in the case of confirmation of peelability. When peeling occurs at the interface between the device-side wafer and the adhesive layer and the release surface can be selected, "device" occurs at the interface between the carrier-side wafer (support) and the adhesive layer, and the release surface can be selected.
  • Example 8 On the 300 mm silicon wafer (thickness: 770 ⁇ m) as the device-side wafer, the above adhesive (5) is formed on the circuit surface of the wafer by spin coating to form a temporary adhesive layer with a film thickness of about 50 ⁇ m. Adhesive layers (5-17) to (5-22) were used respectively. Vacuum bonding apparatus (manufactured by SUSS Microtech Co., Ltd., manual bonder) so that the resin (the adhesive) is sandwiched between the wafer having this adhesive layer and a 300 mm silicon wafer (thickness: 770 ⁇ m) as the carrier-side wafer (support). The laminated body was produced by bonding together. Thereafter, heat treatment was performed at 120 to 260 ° C.
  • the temperature of the carrier-side wafer (upper side) was measured with a thermocouple thermometer (As One) 9 minutes after the start of the heat treatment.
  • heat treatment was performed at 190 ° C. for 10 minutes using an inert gas oven.
  • the force required for peeling was measured with a peeling apparatus (manufactured by SUSS Microtec Co., Ltd., manual debonder). For those that could be peeled off, the force required for peeling was shown as a numerical value as a good result, and those that could not be peeled were indicated as “x” as defective.
  • the peeling interface was confirmed in the case of confirmation of peelability.
  • “device” occurs at the interface between the carrier-side wafer (support) and the adhesive layer, and the release surface can be selected.
  • “carrier” and the case where the peeling interface could not be selected were indicated as “x” as defective.
  • Table 8 According to the results of Table 8 relating to the laminate, the adhesive layers (5-17) to (5-22) formed with the adhesive (5) have good peelability regardless of the heat treatment temperature. In the case of heat treatment, it was shown that the peeling interface can be selected.
  • the peeling interface could not be selected. Since there is a temperature difference of 3.1 to 7.3 ° C. between the hot plate and the carrier side wafer (support) during the heat treatment, it is considered that this temperature difference is related to the selectivity of the peeling interface.
  • Example 9 On the 300 mm silicon wafer (thickness: 770 ⁇ m) as the wafer on the device side, the above adhesives (5), (12) to (16) are each formed into a film of about 50 ⁇ m by spin coating to form a temporary adhesive layer. A film was formed with a thickness on the circuit surface of the wafer to form adhesive layers (5-23) and (12) to (16), respectively.
  • Vacuum bonding device manufactured by SUSS Microtech Co., Ltd., manual bonder
  • the laminated body was produced by bonding together.
  • the peeling interface was confirmed in the case of confirmation of peelability.
  • “device” occurs at the interface between the carrier-side wafer (support) and the adhesive layer, and the release surface can be selected.
  • “carrier”, “ ⁇ ” indicates that the separation interface could not be selected
  • “ ⁇ ” indicates that cohesive failure occurred in the adhesive layer
  • “ ⁇ ” indicates that the separation could not be performed.
  • Table 9 As a result of Table 9 relating to the laminate, the adhesive layers (5-23) and (12) to (15) formed by the adhesive (5) have good adhesiveness and peelability, and the adhesive is cured. It was shown that the peeling interface can be selected depending on the heat-treated surface. It was difficult to peel off with the adhesive layer (16).
  • Example 10 On the 300 mm trim silicon wafer (thickness: 770 ⁇ m) as the device side wafer, the above adhesive (5) is formed on the circuit surface of the wafer by spin coating to form a temporary adhesive layer with a film thickness of about 50 ⁇ m. Thus, an adhesive layer (5-24) was obtained.
  • Vacuum bonding device manufactured by SUSS Microtech Co., Ltd., manual bonder
  • heat treatment was performed at 190 ° C.
  • Example 11 Regeneration test of carrier wafer (support) with solvent
  • the above adhesive spin coat
  • Vacuum bonding apparatus manufactured by SUSS MICROTECH Co., Ltd.
  • the adhesive layers (5-25) and (17) remaining on the carrier-side wafer (support) were immersed in Isoper-E (Ando Parachemi Co., Ltd.). Removal by lift-off was performed. The case where the adhesive layer lifted off immediately after immersion in the solvent was evaluated as good and indicated by “ ⁇ ”, and the case where the adhesive layer did not lift off was indicated by “x”. In the results of Table 11 relating to the laminate, the adhesive layer (5-25) formed of the adhesive (5) was removed in the lift-off process and showed good results. On the other hand, lift-off was not confirmed in the adhesive layer (17) formed by the adhesive (17) mentioned as the comparative example.
  • Example 12 Regeneration test by tape peeling of carrier wafer (support)
  • the above-mentioned adhesion was performed by spin coating to form a temporary adhesion layer on a 300 mm trim silicon wafer (thickness: 770 ⁇ m) as a wafer on the device side.
  • the agent (5) was formed on the circuit surface of the wafer with a film thickness of about 50 ⁇ m to form adhesive layers (5-26) to (5-27), respectively.
  • the laminate was prepared by bonding within a manual bonder.
  • the adhesive layers (5-26) to (5-27) and (17-1) to (17-2) remaining on the carrier-side wafer (support) are applied to the terminal portion masking tape during printed circuit board plating.
  • a peeling test of the adhesive was performed by a tape peeling method using Nitto Denko Corporation, trade name N-300, and a peeling tape (Microcontrol electronic, trade name DLO330MA). The tape is affixed to the adhesive surface of the carrier-side wafer (support), and the tape is peeled off at an angle of 60 to 180 ° with respect to the carrier-side wafer (support), and the carrier-side wafer (support) The test was performed to separate the adhesive layers (5-26) to (5-27) and (17-1) to (17-2) from the above.
  • Example 13 Device wafer cleaning test A 300 mm trim silicon wafer (thickness: 770 ⁇ m) as a device side wafer was spin coated to apply the above adhesive (5) to about 50 ⁇ m to form a temporary adhesive layer. A film was formed on the circuit surface of the wafer with a film thickness to form an adhesive layer (5-28). Vacuum bonding apparatus (manufactured by SUSS MICROTECH Co., Ltd., manual bonder) with a wafer having this adhesive layer and a 300 mm silicon wafer (thickness: 770 ⁇ m) as a carrier side wafer (support) sandwiching the resin (adhesive) ) To obtain a laminate. Thereafter, heat treatment was performed at 190 ° C.
  • an adhesive layer between a support (support substrate) and a wafer, and the adhesive forming the adhesive layer comprises a polyorganosiloxane component that is cured by a hydrosilylation reaction and a non-reactive polyorganosiloxane component.
  • an adhesive that can be selected depending on the heating direction during heat curing. Since the separation interface can be selected, the thinning process of the wafer back surface can be performed efficiently.

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

L'invention fournit un adhésif permettant un pelage facile après polissage de la face arrière d'une tranche, résistant à la chaleur, et présentant des propriétés de retrait facile au lavage. Plus précisément, l'invention concerne un adhésif destiné à l'usinage de la face arrière de la tranche par adhésion de manière à autoriser son pelage entre un corps de support et une face circuit de la tranche, qui durcit par chauffage par le côté corps de support ou le côté tranche, et permettant le choix d'une face de pelage lors du pelage d'une couche adhésive. Ledit adhésif contient un composant (A) durci sous l'effet d'une réaction d'hydrosilylation, et un composant (B) contenant un polydiméthylsiloxane. Le composant (B) consiste en un polydiméthylsiloxane de viscosité comprise entre １１００ｍｍ２／ｓ et ２００００００ｍｍ２／ｓ. L'invention concerne en outre un procédé de formation de stratifié selon lequel la surface d'un second corps de base est liée à une couche adhésive constituée par application de l'adhésif à la surface d'un premier corps de base, et un chauffage à partir du côté du premier corps de base est effectué. Enfin, l'invention concerne un procédé de pelage selon lequel la surface du second corps de base est liée à la couche adhésive constituée par application de l'adhésif à la surface du premier corps de base, le stratifié est usiné après sa formation par durcissement par chauffage à partir du côté du premier corps de base, et le pelage se produit entre le premier corps de base et la couche adhésive.
PCT/JP2017/021834 2016-06-22 2017-06-13 Adhésif à teneur en polydiméthylsiloxane WO2017221772A1 (fr)

Priority Applications (6)

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EP17815241.9A EP3477685A4 (fr) 2016-06-22 2017-06-13 Adhésif à teneur en polydiméthylsiloxane
US16/313,370 US11183415B2 (en) 2016-06-22 2017-06-13 Adhesive containing polydimethyl siloxane
KR1020187035661A KR102272726B1 (ko) 2016-06-22 2017-06-13 폴리디메틸실록산을 함유하는 접착제
SG11201811340VA SG11201811340VA (en) 2016-06-22 2017-06-13 Adhesive containing polydimethyl siloxane
CN201780038781.5A CN109417026B (zh) 2016-06-22 2017-06-13 含有聚二甲基硅氧烷的粘接剂
JP2018523935A JP6916470B2 (ja) 2016-06-22 2017-06-13 ポリジメチルシロキサンを含有する接着剤

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WO2022202153A1 (fr) 2021-03-26 2022-09-29 日産化学株式会社 Composition adhésive, produit stratifié, procédé destiné à produire un produit stratifié et procédé destiné à produire un substrat semi-conducteur
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TW201811969A (zh) 2018-04-01
CN109417026B (zh) 2023-06-13
TWI810156B (zh) 2023-08-01
KR102272726B1 (ko) 2021-07-05
SG11201811340VA (en) 2019-01-30
TW202315923A (zh) 2023-04-16
US11183415B2 (en) 2021-11-23
CN109417026A (zh) 2019-03-01
JP6916470B2 (ja) 2021-08-11
US20190164802A1 (en) 2019-05-30
EP3477685A1 (fr) 2019-05-01
EP3477685A4 (fr) 2020-07-01
KR20190019932A (ko) 2019-02-27

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