WO2017199468A1 - 内部応力制御膜の形成方法 - Google Patents
内部応力制御膜の形成方法 Download PDFInfo
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- WO2017199468A1 WO2017199468A1 PCT/JP2017/002484 JP2017002484W WO2017199468A1 WO 2017199468 A1 WO2017199468 A1 WO 2017199468A1 JP 2017002484 W JP2017002484 W JP 2017002484W WO 2017199468 A1 WO2017199468 A1 WO 2017199468A1
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- film
- internal stress
- control film
- stress control
- pressure
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- 238000000034 method Methods 0.000 title claims abstract description 79
- 238000004544 sputter deposition Methods 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims description 85
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 72
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 51
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 32
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 229910052786 argon Inorganic materials 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 description 262
- 239000010409 thin film Substances 0.000 description 28
- 238000004519 manufacturing process Methods 0.000 description 19
- 239000012528 membrane Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000006835 compression Effects 0.000 description 12
- 238000007906 compression Methods 0.000 description 12
- 238000012545 processing Methods 0.000 description 11
- 238000003384 imaging method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/54—Controlling or regulating the coating process
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Definitions
- the present invention relates to a method for forming an internal stress control film capable of separately creating a thin film having a desired film stress from the compression side to the tension side while maintaining a high film density.
- the thin film material, thin film thickness, production conditions such as pressure and temperature when forming the thin film, or the thin film and the underlying of the thin film are configured.
- an internal stress is generated in the thin film.
- Such internal stress includes compressive stress in which atoms are compressed from the reference state and the interatomic distance is extended, and atoms are pulled from the reference state.
- Patent Documents 1 and 2 a technique for separately forming a thin film having two types of internal stresses (compressive stress and tensile stress) has not been realized only by changing the production conditions when forming the thin film.
- the range of the interlayer insulating film to be etched is limited when dry etching the interlayer insulating film, which is the object to be processed, in order to obtain a predetermined wiring pattern.
- a hard mask is used.
- the hard mask for example, a titanium nitride (TiN) film is preferably used, but since resistance to etching is required, it is required to have a high density. Further, when the internal stress of the titanium nitride film is high, the wiring pattern may be deformed, and therefore it is desirable that the internal stress is low (the absolute value is small).
- the base film formed before the hard mask is manufactured may have internal stresses generated in various directions such as compressive stress and tensile stress. In such a case, it is necessary to reduce the stress acting on the entire film including the hard mask (a laminate of the base film and the hard mask).
- the base film formed before forming the hard mask has a high compressive stress
- a hard mask made of a titanium nitride film having a high stress (tensile stress) is formed on the tensile side, and the entire film is formed. It is important to balance stress.
- the stress of the titanium nitride film itself in order to offset the stress generated before the hard mask is formed, the stress is applied from a high compressive stress to a high tensile stress (in terms of numerical values, about ⁇ 2 GPa to +2 GPa). Development of control technology was expected.
- the titanium nitride film has a high compressive stress (compression stress).
- compression stress compressive stress
- the film density decreases as shown in FIG. While maintaining the high density of the titanium nitride film, reduce the stress on the compression side, or change the stress on the compression side to the stress on the compression side, and further change the stress on the compression side to the stress on the high tension side.
- FIG. 12A to 12D are diagrams showing the relationship between the structure of the titanium nitride film and the film stress.
- FIG. 12A is a schematic diagram showing a cross section of the film, and shows a state in which Tensile Stress is generated so that the film (titanium nitride film) contracts with respect to the substrate (object to be processed).
- FIG. 12B is an enlarged view of FIG. 12A and shows a state in which the titanium nitride film has a columnar structure and a gap exists between adjacent columnar structures.
- FIG. 12C is a STEM photograph showing a cross section of the titanium nitride film, and the state shown in FIG.
- the present invention has been devised in view of such a conventional situation, and it is possible to have a large stress and a high density on the Tensile side only by selecting a manufacturing condition when forming a thin film.
- Another object of the present invention is to provide a method for forming an internal stress control film.
- a method for forming an internal stress control film according to the first aspect of the present invention is a method for forming an internal stress control film on one surface of an object to be processed by a sputtering method, and a process for forming the internal stress control film.
- the pressure of the gas is selected from a pressure region higher than the threshold value 5 (Pa), and the stress of the object to be processed when bias is applied to the object to be processed is closer to the Tensile side than the stress when bias is not applied. Large stress and high density.
- the stress before applying Bias has a Tensile Stress.
- a method for forming an internal stress control film according to a second aspect of the present invention is a method of forming an internal stress control film on one surface of an object to be processed by a sputtering method, wherein the bias BS applied to the object to be processed is 0.
- the power density of the bias BS is in the range of 1/150 or less of the power density of the bias BT applied to the target, and the pressure of the process gas when forming the internal stress control film is a threshold value 5 ( Pa) is selected from a higher pressure region.
- a method for forming an internal stress control film according to a third aspect of the present invention is a method for forming an internal stress control film on one surface of an object to be processed by a sputtering method, and a process for forming the internal stress control film.
- the pressure of the gas is selected from a pressure region higher than a threshold value 5 (Pa)
- the internal stress control film is made of titanium nitride, a target made of titanium, and a gas containing nitrogen as the process gas is used.
- a method for forming an internal stress control film according to a fourth aspect of the present invention is a method for forming an internal stress control film on one surface of an object to be processed by a sputtering method, and a process for forming the internal stress control film.
- the pressure of the gas is selected from a pressure region higher than a threshold value 5 (Pa)
- the internal stress control film is made of titanium nitride, a target made of titanium, and a gas containing nitrogen as the process gas is used.
- the gas containing nitrogen constituting the process gas is composed of argon gas and nitrogen gas, and occupies the gas containing nitrogen.
- the flow rate ratio of nitrogen gas is 50 (%) or more.
- the gas containing nitrogen constituting the process gas is composed of argon gas and nitrogen gas, and occupies the gas containing nitrogen.
- the flow rate ratio of nitrogen gas is 70 (%) or more.
- a weak bias BS is applied to the object to be processed when the internal stress control film is formed on one surface of the object to be processed by sputtering.
- the internal stress control film is formed on the object to be processed with the bias BS applied.
- a strong Tensile Stress film can be obtained by applying weak Bias at a process gas pressure (pressure at which a thin film is formed, discharge pressure) of a threshold value 5 (Pa) or more.
- Pa threshold value 5
- the titanium nitride film is manufactured so as to satisfy the above index, the film density is 4.6 (g / cm 3 ) or more, or 5.0 (g / cm 3 ) or more, and the film stress is tensile (Tensile).
- the titanium nitride film having the film stress on the () side can be stably produced.
- STEM Sccanning Transmission Electron Microscope
- 5 is a graph showing the relationship between Pw-Ratio (sub./target) and film density based on Table 2. It is a graph (graph G1) which shows the relationship between the pressure at the time of forming a thin film, and Pw-Ratio (sub./target). It is a graph (graph G2) which shows the relationship between the pressure at the time of forming a thin film, and Ratio (sub./Rate). It is a graph which shows the relationship between Bias Power and film
- the substrate W constituting the object to be processed is a silicon wafer and titanium nitride is formed on the substrate W as an internal stress control film will be described in detail.
- FIG. 1 is a schematic configuration diagram showing an example of a sputtering apparatus SM that can carry out a method of manufacturing an internal stress control film according to an embodiment of the present invention.
- the sputtering apparatus SM is a magnetron type sputtering apparatus and includes a vacuum chamber 1 that defines a vacuum processing chamber 1a.
- a cathode unit C is attached to the ceiling of the vacuum chamber 1.
- the direction facing the ceiling side of the vacuum chamber 1 is referred to as “up”, and the direction facing the bottom side of the vacuum chamber 1 is described as “down”.
- the cathode unit C includes a target 2 that is a base material of an internal stress control film, and a magnet unit 3 that is disposed above the target 2.
- the target 2 is made of titanium (for example, a target containing titanium and an unavoidable element), and is formed in a circular shape in plan view by a known method according to the outline of the substrate W constituting the object to be processed.
- a backing plate 21 that cools the target 2 during film formation by sputtering is attached, and the sputtering surface 2a is located on the lower side (not shown). It is attached to the vacuum chamber 1 through an insulator.
- An output from a sputtering power source E1 such as a DC power source is connected to the target 2.
- a sputtering power source E1 such as a DC power source
- direct current power (30 kW or less) having a negative potential is applied to the target 2. It is configured.
- the magnet unit 3 disposed above the target 2 generates a magnetic field in a space below the sputtering surface 2 a of the target 2.
- the magnet unit 3 has a known structure that efficiently ionizes sputtered particles scattered from the target 2 by supplementing electrons etc. ionized below the sputtering surface 2a during sputtering. Detailed description of the magnet unit 3 is omitted.
- a stage 4 is disposed at the bottom of the vacuum chamber 1 so as to face the sputtering surface 2 a of the target 2.
- the substrate W placed on the stage 4 is positioned and held so that the film formation surface of the substrate W faces upward.
- the distance between the target 2 and the substrate W may be set to 20 to 800 mm in consideration of productivity, the number of scattering, and the like, preferably 40 to 450 mm, and more preferably 40 to 100 mm.
- an output from a bias power source E2 such as an RF power source is connected to the stage 4 so that AC power can be input to the substrate W when a thin film is formed.
- the stage 4 has a built-in temperature control device H (temperature control means), and is configured to control the temperature of the substrate W when forming a thin film as necessary.
- a first gas pipe 5a for introducing a sputtering gas which is a rare gas such as argon and a second gas pipe 5b for introducing a nitrogen-containing gas are connected to the side wall of the vacuum chamber 1.
- Mass flow controllers 51a and 51b are interposed in the first gas pipe 5a and the second gas pipe 5b, respectively, and communicate with a gas source (not shown).
- a gas source not shown.
- the sputter gas and the reaction gas whose flow rates are controlled are introduced into the vacuum processing chamber 1a that is evacuated at a constant evacuation speed by an evacuation apparatus (evacuation means) described later. Therefore, the pressure (total pressure) in the vacuum processing chamber 1a is kept substantially constant during film formation.
- the sputtering apparatus SM includes a known control device (control means) including a microcomputer, a sequencer, and the like. This control device is configured to comprehensively manage the operation of the power sources E1 and E2, the operation of the mass flow controllers 51a and 51b, the operation of the vacuum exhaust device, and the like.
- a substrate W for example, a silicon wafer
- the vacuum exhaust device is operated to evacuate the vacuum processing chamber 1a to a predetermined degree of vacuum (for example, 1 ⁇ 10 ⁇ 5 Pa).
- the mass flow controllers 51a and 51b are controlled to introduce argon gas and nitrogen gas into the vacuum processing chamber 1a at desired flow rates.
- the gas obtained by adding nitrogen gas to argon gas is the “gas containing nitrogen” in the present invention.
- the argon gas and the nitrogen gas are each controlled to a desired flow rate so that the inside of the vacuum processing chamber 1a has a predetermined pressure (total pressure) in the range of 0.5 to 40 Pa.
- the target made from titanium is a target which has titanium as a main component, and a main component points out that titanium is 50% or more of weight ratio. It is preferable to use a target made of titanium and inevitable impurities.
- a strong Tensile Stress film can be obtained by applying a weak bias of about 5 (W), for example. Furthermore, by increasing the value of Bias to be applied, the stress can be changed from the Tensile side to the Compressive side while maintaining a high film density.
- the bias BS applied to the object to be processed is greater than 0, and the power density of the bias BS is within a range of 1/150 or less of the power density of the bias BT applied to the target.
- the method of manufacturing an internal stress control film according to the embodiment of the present invention is applied to a titanium nitride film that grows in a columnar shape on a target object in a film forming atmosphere at a high pressure and a large amount of nitrogen.
- Film formation is performed while applying a weak bias BS. Therefore, according to the embodiment of the present invention, the object to be processed is tensioned from the compressive side without causing abrupt damage to the columnar structure of the titanium nitride film while maintaining a high film density.
- a film having a desired film stress up to the side can be formed separately. Therefore, the present invention provides a manufacturing method capable of forming a titanium nitride film having a necessary film stress while maintaining a high density state.
- the internal stress control film when the internal stress control film is titanium nitride, the internal stress control film has a high film density of 5.0 (g / cm 3 ) or more and a compression of about ⁇ 2 GPa against the object to be processed
- a film having a desired film stress from the (Compressive) side to the Tensile side of about +2 GPa can be formed.
- the film stress on the tensile side is about ⁇ 500 MPa, or the film is compressed on the side of the tensile side of about +500 MPa.
- the film stress on the (Compressive) side can be selected.
- a membrane stress on the tensile side from the compression side of about ⁇ 100 MPa, or a membrane stress on the compression side from the tensile side of about +100 MPa.
- the film stress of the internal stress control film should be reduced by approximately ⁇ A selection can be made between the 2GPa compressive side and the approximately + 2GPa Tensile side.
- the pressure of the process gas when forming the internal stress control film is selected from a pressure region higher than the threshold value 5 (Pa), 5.0 (g / cm) according to the embodiment of the present invention. 3 ) It was possible to form an internal stress control film having a tensile-side film stress while maintaining the above high film density.
- the internal stress control film is made of titanium nitride
- the pressure P of the process gas is shown on the horizontal axis
- the bias BS applied to the object to be processed is set as the bias BS.
- the ratio R1 ( BS / BT), which is a numerical value divided by the bias BT applied to the target, is shown on the vertical axis.
- the internal stress control film is made of titanium nitride
- the pressure P of the process gas is shown on the horizontal axis
- the film formation rate DR of the internal stress control film is shown.
- a ratio R2 ( DR / BS), which is a numerical value divided by the bias BS applied to the object to be processed, is shown on the vertical axis.
- a combination of argon gas and nitrogen gas is suitably used as the nitrogen-containing gas.
- the flow rate ratio of the nitrogen gas in the nitrogen-containing gas is 50 (%) or more
- the inside of the vacuum processing chamber 1a where the internal stress control film is formed is at a high pressure and a large amount of nitrogen exists.
- the film forming atmosphere can be made. Thereby, the combination of the production conditions shown in the graph G1 and the graph G2 described above is obtained.
- the flow rate ratio of the nitrogen gas occupying the gas containing nitrogen is 70% or more, the inside of the vacuum processing chamber 1a can be formed into a film formation atmosphere in which more nitrogen exists.
- the pressure of the process gas when forming the internal stress control film is 5 (Pa) or more.
- the pressure region is selected from the following pressure regions.
- Example 1 In this embodiment, the sputtering apparatus SM of FIG. 1 is used, and the pressure (discharge pressure) when forming a thin film on the object to be processed (substrate W made of a silicon wafer) is changed between 0.35 and 25 Pa. Then, a titanium nitride film (thickness: 20 nm) was formed. At that time, the bias BS dependency was examined by changing the bias BS applied to the substrate W (3 conditions: 0 W, 5 W, and 50 W). This result is shown in FIG. 2 and is a graph showing the relationship between the pressure (discharge pressure) and the film stress when forming a thin film.
- the film stress changes from the compressive film stress to the tensile film stress as the discharge pressure increases. I understood that. The change from compression to tension occurs near the threshold value of 5 Pa.
- the film stress (MPa) in this case can be changed in the range of ⁇ 1000 to +600.
- the film density was approximately 4.15 (g / cm 3 ) (see FIG. 4 at a later stage).
- FIG. 3A is a graph showing the relationship between the bias BS applied to the object to be processed and the film stress.
- 3B to 3E are STEM (Scanning Transmission Electron Microscope (STEM)) photographs showing the cross section. 3B to 3E show the cases where the bias BS is 0 W, 5 W, 15 W, and 20 W in order.
- FIG. 4A is a graph showing the relationship between the bias power applied to the object to be processed and the film density.
- 4B to 4E are STEM photographs showing cross sections. 4B to 4E show the cases where the bias BS is 0 W, 5 W, 15 W, and 20 W in order.
- the roughness (arithmetic mean roughness Ra) of the film surface was measured using an atomic force microscope (AFM).
- AFM atomic force microscope
- the roughness of the surface of the film produced under only high pressure conditions when the bias BS was 0 W
- the roughness of the film surface produced under high pressure and weak bias conditions when the bias BS is 5 W
- the evaluation result regarding the roughness of the film surface supports the above estimation (the separation portion of the columnar structure is narrowed and the separation portion is closed to change to a dense structure).
- Example 2 In this example, the film stress and film density of the titanium nitride film were examined under four pressure conditions (10.0, 17.0, 25.0, 37.0 (Pa)). At that time, the direct-current power (having a negative potential) applied to the target 2 was changed by a maximum of 5 conditions (3.5, 7, 10.5, 14, 17.5, 21 (kW)). Further, the bias BS applied to the object to be processed was changed in a maximum of 8 conditions (0, 2, 5, 10, 15, 20, 25, 30 (W)).
- Tables 1 to 3 show cases where the pressure P of the process gas is 10.0 (Pa), Table 1 shows film stress, Table 2 shows film density, and Table 3 shows film formation speed.
- Tables 4 to 6 show cases where the pressure P of the process gas is 17.0 (Pa), Table 4 shows film stress, Table 5 shows film density, and Table 6 shows film formation speed.
- Tables 7 to 9 show cases where the pressure P of the process gas is 25.0 (Pa), Table 7 shows film stress, Table 8 shows film density, and Table 9 shows film formation speed.
- Tables 10 to 12 show cases where the pressure P of the process gas is 37.0 (Pa), Table 10 shows film stress, Table 11 shows film density, and Table 12 shows film formation speed.
- the indication “7.6E-03” means “7.6 ⁇ 10 ⁇ 3 ”.
- the sign “-” means that there is no corresponding data.
- FIG. 5 is a graph showing the relationship between Pw-Ratio (sub./target) and membrane stress based on Table 4.
- FIG. 6 is a graph showing the relationship between Pw-Ratio (sub./target) and membrane stress based on Table 7. From FIG. 5, it was found that under the pressure condition (17 Pa) in Table 4, the film stress becomes the film stress on the tensile side over the whole area of the measured Pw-Ratio (sub./target). In the case of 7 kW (symbol ⁇ ), the maximum film stress was obtained over the entire area of the measured Pw-Ratio (sub./target). From FIG.
- FIG. 7 is a graph showing the relationship between Pw-Ratio (sub./target) and film density based on Table 2. From FIG. 7, it was found that the film density showed an increasing tendency as the Pw-Ratio (sub./target) increased over the entire measured Pw-Ratio (sub./target). When Pw-Ratio (sub./target) was approximately 0.0016, the film density was 4.6. Further, when Pw-Ratio (sub./target) was approximately 0.00241, the film density was 5.0. Therefore, from the result of FIG. 7, in order to set the film density to 4.6 (5.0) or more, the setting of Pw-Ratio (sub./target) should be 0.0016 or more (0.00241 or more). It became clear that it would be good.
- Tables 13 to 15 shown below are three conditions (7, 10.5, 14 (kW)) of DC power applied to the target 2 (having a negative potential) based on the data of Tables 1 to 12. Recalculated for each. In each table, the results (film stress, film density) of the conditions in which the bias BS applied to the object to be processed is increased are listed in order from the top to the bottom.
- FIG. 8 is a graph showing the relationship between the pressure when forming a thin film and Pw-Ratio (sub./target).
- FIG. 9 is a graph showing the relationship between the pressure when forming a thin film and Ratio (sub./Rate).
- the “pressure when forming the thin film” is “the pressure P of the process gas”.
- “Ratio (sub./Rate)” means “ratio R2 which is a numerical value of bias BS applied to the object to be processed with respect to the deposition rate of the internal stress control film of 10 nm / min”.
- the horizontal axis represents the pressure P of the process gas
- the upper right of the curve ⁇ passing through three plots, a1 (10.0, 0.0016), a2 (17.0, 0.00059), and a3 (25.0, 0.0001) By selecting a combination of the pressure P and the ratio R1, a titanium nitride film having a film density of 4.6 (g / cm 3 ) or more can be obtained.
- the manufactured titanium nitride film has a film density of 5.0 (g / cm 3 ) or more.
- the film density may take a curve like a contour line. I understood. As the film density increased, the tendency to occupy the upper right region in the graph 2 was confirmed.
- a titanium nitride film having a film density of 4.6 (g / cm 3 ) or more can be obtained by selecting a combination of the pressure P and the ratio R2 so as to be included in the upper right region.
- the manufactured titanium nitride film has a film density of 5.0 (g / cm 3 ) or more.
- the results shown in FIGS. 8 and 9 provide an important index for managing the process of manufacturing a titanium nitride film having a high film density and having a film stress on the tensile side as a film stress. Yes. That is, if the titanium nitride film is manufactured so as to satisfy the indices of FIGS. 8 and 9, the film density is 4.6 (g / cm 3 ) or more, or 5.0 (g / cm 3 ) or more. It is possible to construct a process suitable for mass production, which can stably produce a titanium nitride film having a film stress on the tensile side as a film stress.
- FIG. 10 is a graph showing the relationship between Bias Power and film stress.
- the symbol ⁇ indicates that the nitrogen gas is 100%
- the symbol ⁇ indicates that the argon gas is 10%
- the nitrogen gas is 90%
- the symbol ⁇ indicates that the argon gas is 30%
- the nitrogen gas is 70%.
- the symbol ⁇ represents the case where the argon gas is 50% and the nitrogen gas is 50%.
- the gas containing nitrogen constituting the process gas is composed of argon gas and nitrogen gas, and the flow rate ratio of the nitrogen gas to the gas containing nitrogen is 50 (%) or more. It was revealed that an internal stress control film having a (Tensile) side film stress can be obtained stably.
- the method of manufacturing the internal stress control film according to the embodiment of the present invention has been described above, it should be understood that these are exemplary of the present invention and should not be considered as limiting. is there. Additions, omissions, substitutions, and other changes can be made without departing from the scope of the invention. Accordingly, the invention is not to be seen as limited by the foregoing description, but is limited by the scope of the claims.
- the case where the internal stress control film is titanium nitride has been described in detail.
- the present invention is not limited to titanium nitride (TiN), and a material formed using a gas containing nitrogen is used. Widely applicable. That is, examples of the internal stress control film to which the present invention is applied include aluminum nitride (AlN) and silicon nitride (SiN) in addition to titanium nitride (TiN).
- the substrate W made of a silicon wafer is described as an example of the object to be processed.
- the present invention is also applicable to the case where the substrate W is formed on the surface of the interlayer insulating film or the outermost surface of the multilayer structure. It is possible to apply.
- the internal stress control film formed by the manufacturing method of the present invention has an advantage that it can be applied flexibly without depending on the underlying material and structure on which the internal stress control film is provided.
- the substrate W that is the object to be processed is not heat-treated, but the present invention is not limited to this.
- the object to be processed may be controlled to a desired temperature as appropriate.
- the temperature control of the object to be processed can be performed by arranging the temperature control device H for controlling the temperature of the object to be processed inside the stage 4 on which the object to be processed (substrate W) is placed in FIG. .
- the present invention is widely applicable to a method for producing an internal stress control film.
- Such an internal stress control film is used not only for a hard mask in a manufacturing process of a semiconductor device, but also for various other devices.
- E1 sputtering power supply E2 bias power supply, SM sputtering device, W substrate (object to be processed), 1a vacuum processing chamber, 2 targets, 4 stages, 51 mass flow controller.
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Abstract
Description
本願は、2016年5月16日に日本に出願された特願2016-98158号に基づき優先権を主張し、その内容をここに援用する。
従来、圧縮応力が生じている薄膜において、膜ストレスを低減する方法が提案されている(特許文献1、特許文献2)。しかしながら、薄膜を成膜する時の作製条件を変更するだけで、この2種類(圧縮応力及び引張応力)の内部応力を有する薄膜を作り分ける技術は実現されていなかった。
図12A~図12Dは、窒化チタン膜の構造と膜ストレスとの関係を示す図である。図12Aは膜の断面を示す模式図であり、基板(被処理体)に対して膜(窒化チタン膜)が縮むように働くTensile Stressが発生している状態を表している。図12Bは図12Aの拡大図であり、窒化チタン膜が柱状構造を有し、隣接する柱状構造の間に隙間が存在している様子を表している。図12Cは窒化チタン膜の断面を示すSTEM写真であり、この写真から図12Dに示す状態が確認された。
そこで、本発明者らは、図12Dに示すように、隣接する柱状構造を密着させて、隙間を低減することができれば、高い膜密度を保ちつつ、圧縮側から引張側まで所望の膜ストレスを有する薄膜を作り分けることが可能ではないかと考察し、本発明を開発するに至った。
本発明の第1態様に係る内部応力制御膜の形成方法において、前記Biasを印加する前のStressがTensile Stressを有する。
本発明の第3態様に係る内部応力制御膜の形成方法において、前記グラフG1において、3つのプロット、b1(10.0、0.00241)、b2(17.0、0.0012)、およびb3(25.0、0.0004)を通過する曲線βより、右上の領域に含まれるように、前記圧力Pと前記比率R1の組み合わせを選択する。
本発明の第4態様に係る内部応力制御膜の形成方法において、前記グラフG2において、3つのプロット、d1(10.0、0.008)、d2(17.0、0.0034)、およびd3(25.0、0.002)を通過する曲線δより、右上の領域に含まれるように、前記圧力Pと前記比率R2の組み合わせを選択する。
本発明の第1態様~第4態様に係る内部応力制御膜の形成方法において、前記プロセスガスを構成する窒素を含むガスが、アルゴンガスと窒素ガスから構成され、前記窒素を含むガスに占める前記窒素ガスの流量比が70(%)以上である。
また、プロセスガスの圧力Pを横軸、前記被処理体に印加するバイアスBSを前記ターゲットに印加するバイアスBTにより除した数値である比率R1(=BS/BT)を縦軸としたグラフG1、あるいは、前記プロセスガスの圧力Pを横軸、前記内部応力制御膜の成膜速度10nm/minに対する前記被処理体に印加するバイアスBSの数値である比率R2を縦軸としたグラフG2において、特定の指標を満たすように窒化チタン膜を製造するならば、膜密度が4.6(g/cm3)以上、あるいは5.0(g/cm3)以上であって、膜ストレスとして引張(Tensile)側の膜ストレスを有する窒化チタン膜を、安定して製造できる。
ターゲット2の上面(スパッタリング面2aとは反対側の面)には、スパッタリングによる成膜中、ターゲット2を冷却するバッキングプレート21が装着され、スパッタリング面2aが下側に位置するように、不図示の絶縁体を介して真空チャンバ1に取り付けられている。
また、ステージ4には、RF電源等のバイアス電源E2からの出力が接続されており、薄膜を成膜する時には、基板Wに対して、交流電力の投入が可能なように構成されている。さらに、ステージ4は、温度制御装置H(温度制御手段)を内蔵しており、必要に応じて、薄膜を成膜する時の基板Wの温度をコントロールするように構成されている。
まず、チタン製のターゲット2が装着された真空チャンバ1内のステージ4に基板W(例えば、シリコンウェハ)を載置する。真空排気装置を作動させて、真空処理室1a内を所定の真空度(例えば、1×10-5Pa)まで真空引きする。真空処理室1a内が所定圧力に達した後、マスフローコントローラ51a、51bを各々制御して、アルゴンガスと窒素ガスとを所望の流量にて、真空処理室1a内に導入する。ここで、アルゴンガスに窒素ガスを加えたガスが、本発明における「窒素を含むガス」である。例えば、真空処理室1aの内部が0.5~40Paの範囲の所定圧力(全圧)となるように、アルゴンガスと窒素ガスは各々、所望の流量に制御される。ここで、チタン製のターゲットとは、チタンを主成分とするターゲットであり、主成分とはチタンが重量比50%以上であることを指す。なお、チタン及び不可避不純物からなるターゲットを用いることが好ましい。
つまり、膜ストレスの小さい内部応力制御膜を形成するという観点から、約-500MPaの圧縮(Compressive)側よりも引張(Tensile)側の膜ストレス、又は、約+500MPaの引張(Tensile)側よりも圧縮(Compressive)側の膜ストレスを選択することができる。また、約-100MPaの圧縮(Compressive)側よりも引張(Tensile)側の膜ストレス、又は、約+100MPaの引張(Tensile)側よりも圧縮(Compressive)側の膜ストレスを選択することもできる。あるいは内部応力制御膜を形成する以前に形成される下地膜が高い応力を持っている場合等は、膜全体としてストレスを相殺してバランスをとるために、内部応力制御膜の膜ストレスを約-2GPaの圧縮(Compressive)側から約+2GPaの引張(Tensile)側までの間で選択することができる。
特に、前記内部応力制御膜を成膜する際のプロセスガスの圧力が、閾値5(Pa)より高い圧力領域の中から選択されるならば、本発明の実施形態によって5.0(g/cm3)以上の高い膜密度を保ちつつ、引張側の膜ストレスを有する内部応力制御膜を形成することが可能となった。
ここで、「3つのプロット、a1(10.0、0.0016)、a2(17.0、0.00059)、およびa3(25.0、0.0001)」のことを、特定の指標とも呼ぶ。
ここで、「3つのプロット、b1(10.0、0.00241)、b2(17.0、0.0012)、およびb3(25.0、0.0004)」のことを、特定の指標とも呼ぶ。
ここで、「3つのプロット、c1(10.0、0.0032)、c2(17.0、0.0018)、およびc3(25.0、0.0008)」のことを、特定の指標とも呼ぶ。
ここで、「3つのプロット、d1(10.0、0.008)、d2(17.0、0.0034)、およびd3(25.0、0.002)」のことを、特定の指標とも呼ぶ。
これにより、上述したグラフG1やグラフG2に示す作製条件の組み合わせが得られる。
前記窒素を含むガスに占める前記窒素ガスの流量比を、70%以上とした場合には、真空処理室1aの内部をさらに窒素が多く存在する成膜雰囲気とすることができる。これによって、より大きなTensile側のStressを得ることができるので、より好ましい。また、高い膜密度を備えながらも、引張(Tensile)側の膜ストレスを有する内部応力制御膜を形成するにおいて、前記内部応力制御膜を成膜する際のプロセスガスの圧力が5(Pa)以上の圧力領域の中から選択されることが好ましい。
本実施例では、図1のスパッタリング装置SMを用い、被処理体(シリコンウェハからなる基板W)上に、薄膜を成膜する時の圧力(放電圧力)を0.35~25Paの間で変更して、窒化チタン膜(厚さ:20nm)を形成した。その際、基板Wに対して印加するバイアスBSを変更(3条件:0W、5W、50W)することにより、バイアスBS依存性について調べた。この結果が、図2であり、薄膜を成膜する時の圧力(放電圧力)と膜ストレスとの関係を示すグラフである。
(A1)バイアスBSが50Wの場合は、作製された窒化チタン膜は、放電圧力に依存せず、被処理体に対して圧縮(Compressive)側の膜ストレスを有する。放電圧力が1Paを超えると、圧縮(Compressive)側の膜ストレスが増加傾向を示し、放電圧力が25Paにおいて、最大の膜ストレス(およそ-2800(MPa))が観測された。膜密度は、およそ5.65(g/cm3)であった(後段の図4参照)。
図4Aは、被処理体に印加するバイアスパワーと膜密度との関係を示すグラフである。図4B~図4Eは、断面を示すSTEM写真である。図4B~図4Eは、順に、バイアスBSが、0W、5W、15W、20Wの場合を示している。
(B1)バイアスBSが0Wから5Wに増加すると、膜ストレスは、引張(Tensile)側において増加傾向を示す(+600→+1500(MPa))。その際、膜密度が急激に増加する(4.15→5.35(g/cm3))。
(B2)バイアスBSが5Wを超えると、膜ストレスは、単調に減少する傾向を示す。バイアスBSが20W付近を閾値として、引張(Tensile)側の膜ストレスから圧縮(Compressive)側の膜ストレスへ、膜ストレスが変化する。
(B3)バイアスBSが5Wを超えると、膜密度は5.50~5.75(g/cm3)の範囲で安定する。断面SEM写真より、薄膜を成膜する時に印加するバイアスBSの大きさを増やすにつれて、柱状構造の離間部が狭まり、離間部が閉じて緻密な構造へ変化したことにより、膜密度の大きな窒化チタン膜が得られたと推定した。また、密度の変化が殆どない状態でStressが大きく変化していることから、これらの領域では膜自体のStress特性が変わっていると推測できる。
本実施例では、窒化チタン膜について、4つの圧力条件(10.0、17.0、25.0、37.0(Pa))下における膜ストレスと膜密度を調べた。その際、ターゲット2に印加される(負の電位を有する)直流電力は、最大5条件(3.5、7、10.5、14、17.5、21(kW))変化させた。また、被処理体に印加するバイアスBSは、最大8条件(0、2、5、10、15、20、25、30(W))変化させた。
表4~表6は、プロセスガスの圧力Pが17.0(Pa)の場合であり、表4は膜ストレス、表5は膜密度、表6は成膜速度を表す。
表7~表9は、プロセスガスの圧力Pが25.0(Pa)の場合であり、表7は膜ストレス、表8は膜密度、表9は成膜速度を表す。
表10~表12は、プロセスガスの圧力Pが37.0(Pa)の場合であり、表10は膜ストレス、表11は膜密度、表12は成膜速度を表す。
各表の中で、例えば、「7.6E-03」という表示は、「7.6×10-3」を意味する。
符号「--」は、該当するデータが無いことを意味する。
図5より、表4の圧力条件(17Pa)では、測定したPw-Ratio(sub./target)の全域に亘って、膜ストレスは、引張(Tensile)側の膜ストレスとなることが分かった。7kW(記号◇印)の場合、測定したPw-Ratio(sub./target)の全域に亘って、最大の膜ストレスが得られた。
図6より、表7の圧力条件(25Pa)においても、測定したPw-Ratio(sub./target)の全域に亘って、膜ストレスは、引張(Tensile)側の膜ストレスとなることが分かった。7kW(記号◇印)の場合、測定したPw-Ratio(sub./target)の全域に亘って、最大の膜ストレスが得られた。特に、7kW(記号◇印)の測定結果を示す曲線と横軸との交点が、0.0067(1/150)であった。したがって、この交点より、Pw-Ratio(sub./target)の値が小さい条件を満たすとき、膜ストレスは、引張(Tensile)側の膜ストレスとなることが確認された。
図7より、測定したPw-Ratio(sub./target)の全域に亘って、Pw-Ratio(sub./target)が増えるに連れて、膜密度は増加傾向を示すことが分かった。Pw-Ratio(sub./target)がおよそ0.0016の場合に、膜密度は4.6であった。また、Pw-Ratio(sub./target)がおよそ0.00241の場合に、膜密度は5.0であった。
ゆえに、図7の結果より、膜密度を4.6(5.0)以上とするためには、Pw-Ratio(sub./target)の設定を0.0016以上(0.00241以上)とすれば良いことが明らかとなった。
図8は、薄膜を成膜する時の圧力とPw-Ratio(sub./target)との関係を示すグラフである。図9は、薄膜を成膜する時の圧力とRatio(sub./Rate)との関係を示すグラフである。
ここで、「薄膜を成膜する時の圧力」とは、「プロセスガスの圧力P」である。「Pw-Ratio(sub./target)」とは、「被処理体に印加するバイアスBSを前記ターゲットに印加するバイアスBTにより除した数値である比率R1(=BS/BT)」である。「Ratio(sub./Rate)」とは、「内部応力制御膜の成膜速度10nm/minに対する被処理体に印加するバイアスBSの数値である比率R2」を意味する。
つまり、図8及び図9の指標を満たすように窒化チタン膜を製造するならば、膜密度が4.6(g/cm3)以上、あるいは5.0(g/cm3)以上であって、膜ストレスとして引張(Tensile)側の膜ストレスを有する窒化チタン膜を、安定して製造できる、量産に好適な工程を構築することが可能となる。
(C1)バイアスBSを微弱に印加する場合(5W~10W)は、バイアスBSを印加しない場合(0W)に比べて、膜ストレスが引張(Tensile)となり、増大傾向を示す。この増大傾向は、窒素を含むガスに占める窒素ガスの割合が50%以上であるなら、アルゴンガスと窒素ガスの比率に依存しない。
上述した実施形態では、内部応力制御膜が窒化チタンの場合について詳述したが、本発明は窒化チタン(TiN)に限定されるものではなく、窒素を含むガスを用いて成膜される材料に広く適用できる。すなわち、本発明が適用される内部応力制御膜としては、窒化チタン(TiN)の他に、窒化アルミニウム(AlN)、窒化シリコン(SiN)等が挙げられる。
Claims (9)
- スパッタリング法により被処理体の一面に内部応力制御膜を形成する方法であって、
前記内部応力制御膜を成膜する際のプロセスガスの圧力が、閾値5(Pa)より高い圧力領域から選択され、かつ、前記被処理体にBiasを印加した際の被処理体のStressがBiasを印加しない場合のStressに比べてTensile側に大きなStressと、高い密度を有する内部応力制御膜の形成方法。 - 前記Biasを印加する前のStressがTensile Stressを有する請求項1に記載の内部応力制御膜の形成方法。
- スパッタリング法により被処理体の一面に内部応力制御膜を形成する方法であって、
前記被処理体に印加するバイアスBSが0より大きく、前記バイアスBSの電力密度がターゲットに印加するバイアスBTの電力密度の1/150以下の範囲であり、かつ、前記内部応力制御膜を成膜する際のプロセスガスの圧力が、閾値5(Pa)より高い圧力領域から選択される内部応力制御膜の形成方法。 - スパッタリング法により被処理体の一面に内部応力制御膜を形成する方法であって、
前記内部応力制御膜を成膜する際のプロセスガスの圧力が、閾値5(Pa)より高い圧力領域から選択され、
前記内部応力制御膜が窒化チタンからなり、
チタンからなるターゲットと、前記プロセスガスとして窒素を含むガスを用い、
前記プロセスガスの圧力Pを横軸、前記被処理体に印加するバイアスBSを前記ターゲットに印加するバイアスBTにより除した数値である比率R1(=BS/BT)を縦軸としたグラフG1において、
3つのプロット、a1(10.0、0.0016)、a2(17.0、0.00059)、およびa3(25.0、0.0001)を通過する曲線αより、右上の領域に含まれるように、前記圧力Pと前記比率R1の組み合わせを選択する内部応力制御膜の形成方法。 - 前記グラフG1において、
3つのプロット、b1(10.0、0.00241)、b2(17.0、0.0012)、およびb3(25.0、0.0004)を通過する曲線βより、右上の領域に含まれるように、前記圧力Pと前記比率R1の組み合わせを選択する請求項4に記載の内部応力制御膜の形成方法。 - スパッタリング法により被処理体の一面に内部応力制御膜を形成する方法であって、
前記内部応力制御膜を成膜する際のプロセスガスの圧力が、閾値5(Pa)より高い圧力領域から選択され、
前記内部応力制御膜が窒化チタンからなり、
チタンからなるターゲットと、前記プロセスガスとして窒素を含むガスを用い、
前記プロセスガスの圧力Pを横軸、前記内部応力制御膜の成膜速度10nm/minに対する前記被処理体に印加するバイアスBSの数値である比率R2を縦軸としたグラフG2において、
3つのプロット、c1(10.0、0.0032)、c2(17.0、0.0018)、およびc3(25.0、0.0008)を通過する曲線γより、右上の領域に含まれるように、前記圧力Pと前記比率R2の組み合わせを選択する内部応力制御膜の形成方法。 - 前記グラフG2において、
3つのプロット、d1(10.0、0.008)、d2(17.0、0.0034)、およびd3(25.0、0.002)を通過する曲線δより、右上の領域に含まれるように、前記圧力Pと前記比率R2の組み合わせを選択する請求項6に記載の内部応力制御膜の形成方法。 - 前記プロセスガスを構成する窒素を含むガスが、アルゴンガスと窒素ガスから構成され、前記窒素を含むガスに占める前記窒素ガスの流量比が50(%)以上である請求項1から請求項7のいずれか一項に記載の内部応力制御膜の形成方法。
- 前記プロセスガスを構成する窒素を含むガスが、アルゴンガスと窒素ガスから構成され、前記窒素を含むガスに占める前記窒素ガスの流量比が70(%)以上である請求項1から請求項7のいずれか一項に記載の内部応力制御膜の形成方法。
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