JP2019175975A - ボロン系膜の成膜方法および成膜装置 - Google Patents
ボロン系膜の成膜方法および成膜装置 Download PDFInfo
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- JP2019175975A JP2019175975A JP2018061664A JP2018061664A JP2019175975A JP 2019175975 A JP2019175975 A JP 2019175975A JP 2018061664 A JP2018061664 A JP 2018061664A JP 2018061664 A JP2018061664 A JP 2018061664A JP 2019175975 A JP2019175975 A JP 2019175975A
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- boron
- film
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- 229910052796 boron Inorganic materials 0.000 title claims abstract description 145
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 238000000151 deposition Methods 0.000 title claims abstract description 18
- 230000008021 deposition Effects 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims abstract description 14
- 238000012545 processing Methods 0.000 claims description 19
- 239000012528 membrane Substances 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000006870 function Effects 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 195
- 239000007789 gas Substances 0.000 description 133
- 238000009792 diffusion process Methods 0.000 description 19
- 230000003746 surface roughness Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 230000007423 decrease Effects 0.000 description 8
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000010790 dilution Methods 0.000 description 7
- 239000012895 dilution Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
最初に、本開示のボロン系膜の成膜方法に至った経緯について説明する。
ボロン系膜はドライエッチングによるパターニング工程におけるハードマスクとして有望視されており、従来、CVDにより成膜されている。ボロン系膜の中でも、特に、ボロン単独のボロン膜がハードマスクとして優れた特性を有することがわかっている。
図1は、一実施形態に係るボロン系膜の成膜方法を実施するための成膜装置の一例を示す断面図である。本例の成膜装置100は、ボロン膜を成膜する容量結合プラズマCVD装置として構成される。
次に、以上のように構成される成膜装置100において実施されるボロン系膜としてのボロン膜の成膜方法について図2のフローチャートを参照して説明する。
図4は、図1に示す容量結合プラズマCVD装置として構成される成膜装置によりRFパワーを変化させてボロン膜を成膜した際のRFパワーと膜応力との関係を示す図であり、図5は、横軸のRFパワーを対数表示したものである。他のプロセス条件は、温度:300℃、圧力:500mTorr(66.7Pa)、B2H6ガス(B2H6濃度:15vol%inHeガス)流量:200sccm(B2H6ガス正味:30sccm、Heガス:170sccm)、Arガス流量:100sccm、Heガス流量:100sccm、電極間ギャップ20mmとした。なお、応力は負の方向が圧縮方向である。
以上、実施形態について説明したが、今回開示された実施形態は、全ての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の特許請求の範囲およびその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。
20;載置台
30;ガスシャワーヘッド
40;ガス供給機構
50;高周波電力供給装置
60;制御部
100;成膜装置
W;半導体ウエハ(被処理基板)
Claims (21)
- 基板上にボロンを主体とするボロン系膜を形成するボロン系膜の成膜方法であって、
容量結合プラズマを用いたプラズマCVDによりボロン系膜を成膜する成膜装置のチャンバ内に基板を搬入する第1工程と、
前記チャンバ内にボロン含有ガスを含む処理ガスを供給する第2工程と、
容量結合プラズマを生成するための高周波電力を印加する第3工程と、
前記高周波電力により前記処理ガスのプラズマを生成して基板上に前記ボロン系膜を成膜する第4工程と
を含み、
前記第3工程の高周波電力のパワーにより前記ボロン系膜の膜応力を調整する、ボロン系膜の成膜方法。 - 前記第3工程は、500W以下のパワーの高周波電力を印加する、請求項1に記載のボロン系膜の成膜方法。
- 前記第3工程は、100W以下のパワーの高周波電力を印加する、請求項2に記載のボロン系膜の成膜方法。
- 前記第4工程の際の前記チャンバ内の圧力により前記ボロン系膜の膜応力を調整する、請求項1から請求項3のいずれか1項に記載のボロン系膜の成膜方法。
- 前記チャンバ内の圧力は、300mTorr(40Pa)〜3Torr(400Pa)の範囲である、請求項4に記載のボロン系膜の成膜方法。
- 前記チャンバ内の圧力は、500mTorr(66.7Pa)〜1Torr(133.3Pa)の範囲である、請求項5に記載のボロン系膜の成膜方法。
- 前記処理ガスは、ボロン含有ガスと希ガスとを含む、請求項1から請求項6のいずれか1項に記載のボロン系膜の成膜方法。
- 前記希ガスはHeガスおよび/またはArガスからなり、HeガスとArガスの比率により前記ボロン系膜の膜応力を調整する、請求項7に記載のボロン系膜の成膜方法。
- 前記第4工程は、前記基板を載置する載置台に印加する高周波電力によるバイアス電圧によりプラズマからの前記載置台へのイオンの引き込みを制御して前記ボロン系膜の膜応力を調整する、請求項1から請求項8のいずれか1項に記載のボロン系膜の成膜方法。
- 前記第4工程は、前記基板を載置する載置台のインピーダンスにより前記載置台上の基板へのプラズマからのイオンの作用を制御して前記ボロン系膜の膜応力を調整する、請求項1から請求項8のいずれか1項に記載のボロン系膜の成膜方法。
- 前記第4工程は、前記基板を載置する載置台のインピーダンスをプラズマ中のイオンが載置台上の基板から反発するように調整して前記ボロン系膜の膜応力を調整する、請求項10に記載のボロン系膜の成膜方法。
- 前記ボロン系膜は、ボロンと不可避的不純物とからなるボロン膜である、請求項1から請求項11のいずれか1項に記載のボロン系膜の成膜方法。
- 前記ボロン含有ガスとしてB2H6ガスを用いる、請求項1から請求項12のいずれか1項に記載のボロン系膜の成膜方法。
- 基板上にボロンを主体とするボロン系膜を成膜する成膜装置であって、
基板を収容するチャンバと、
前記チャンバ内で基板を支持する載置台として機能する下部電極と、
前記載置台と対向して設けられた上部電極と、
前記チャンバ内にボロン含有ガスを含む処理ガスを供給するガス供給機構と、
前記下部電極と前記上部電極との間に高周波電界を形成する高周波電力印加手段と、
前記高周波電力印加手段からの高周波電力のパワーを制御して前記ボロン系膜の膜応力を調整する制御部と
を有し、
前記下部電極と前記上部電極との間の高周波電界により生成された前記処理ガスのプラズマによりボロン系膜を成膜する、ボロン系膜の成膜装置。 - 前記制御部は、前記高周波電力印加手段からの高周波電力のパワーを500W以下に制御する、請求項14に記載のボロン系膜の成膜装置。
- 前記制御部は、前記高周波電力印加手段からの高周波電力のパワーを100W以下に制御する、請求項15に記載のボロン系膜の成膜装置。
- 前記制御部は、前記チャンバ内の圧力を制御して前記ボロン系膜の膜応力を調整する、請求項14から請求項16のいずれか1項に記載のボロン系膜の成膜装置。
- 前記ガス供給機構は、前記ボロン含有ガスとしてB2H6ガスを供給する、請求項14から請求項17のいずれか1項に記載のボロン系膜の成膜装置。
- 前記ガス供給機構は、前記ボロン含有ガスと、希ガスであるHeガスおよび/またはArガスとを供給し、前記制御部は、HeガスとArガスの比率を制御して前記ボロン系膜の膜応力を調整する、請求項14から請求項18のいずれか1項に記載のボロン系膜の成膜装置。
- 前記載置台に高周波電力を印加し、前記載置台上の前記基板にバイアス電圧を印加するバイアス電圧印加用高周波電源をさらに有し、
前記制御部は、前記バイアス電圧によりプラズマからの前記載置台へのイオンの引き込みを制御して前記ボロン系膜の膜応力を調整する、請求項14から請求項19のいずれか1項に記載のボロン系膜の成膜装置。 - 前記載置台のインピーダンスを調整するインピーダンス調整手段をさらに有し、
前記制御部は、載置台のインピーダンスにより前記載置台上の基板へのプラズマからのイオンの作用を制御して前記ボロン系膜の膜応力を調整する、請求項14から請求項20のいずれか1項に記載のボロン系膜の成膜装置。
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