WO2017195549A1 - 塗布膜形成装置、塗布膜形成方法及び記憶媒体 - Google Patents

塗布膜形成装置、塗布膜形成方法及び記憶媒体 Download PDF

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Publication number
WO2017195549A1
WO2017195549A1 PCT/JP2017/015718 JP2017015718W WO2017195549A1 WO 2017195549 A1 WO2017195549 A1 WO 2017195549A1 JP 2017015718 W JP2017015718 W JP 2017015718W WO 2017195549 A1 WO2017195549 A1 WO 2017195549A1
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WIPO (PCT)
Prior art keywords
liquid
substrate
wafer
coating
resist
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PCT/JP2017/015718
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English (en)
French (fr)
Japanese (ja)
Inventor
柴田　直樹
真一 畠山
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東京エレクトロン株式会社
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Priority to JP2018516913A priority Critical patent/JPWO2017195549A1/ja
Publication of WO2017195549A1 publication Critical patent/WO2017195549A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to a technical field of forming a coating film by supplying a coating solution to a substrate.
  • various coating liquids are supplied to the surface of a semiconductor wafer (hereinafter referred to as a wafer), which is a substrate, to form a coating film.
  • the coating film is formed by so-called spin coating in which the coating solution supplied to the center of the wafer is spread on the peripheral edge of the wafer by centrifugal force generated by the rotation of the wafer.
  • the coating liquid include a resist.
  • a resist having a relatively high viscosity may be used.
  • a coating liquid is supplied to the central portion of a wafer, and then a diluent is supplied to the central portion of the wafer to form a mixed liquid. Describes forming a coating film by forming a state in which a mixed solution having a low concentration of the coating solution exists in the center of the wafer and then uniformizing the concentration of the coating solution on the wafer surface by rotating the wafer. Has been. However, in this patent document 1, the dilution liquid is supplied so that the whole liquid reservoir of a coating liquid may be covered. In such a method, since the viscosity of the coating solution is excessively reduced, it is difficult to control the film thickness of the coating film, and in particular, it is considered difficult to relatively increase the film thickness of the coating film.
  • Patent Document 2 when a resist film is formed on a square substrate, a solvent mist or a solvent vapor is supplied to the substrate at the time of applying the resist to adjust the concentration of the solvent in the airflow on the corner of the substrate. Is described. This solvent is supplied only to the corners of the rectangular substrate, and when applying the resist to the substrate by spin coating, there is no focus on the above-mentioned problem of bubbles generated at the peripheral edge of the substrate, and the problem is solved. It is not possible.
  • the present invention has been made to solve such a problem, and an object of the present invention is to provide a technique capable of suppressing the mixing of bubbles in the coating film when the coating film is formed on the substrate.
  • the coating film forming apparatus of the present invention is A substrate holder for horizontally holding the substrate; A rotation mechanism for rotating the substrate held by the substrate holding unit; A coating liquid supply nozzle for supplying a coating liquid for forming a coating film on the surface of the substrate to the center of the substrate; A diluent for reducing the viscosity of the coating solution is supplied to the substrate, and a diluent supply nozzle for forming a mixed solution in which the coating solution is diluted; A first step of supplying the coating liquid to the substrate to form a local liquid pool in the central portion of the substrate; and then supplying a dilute solution to the peripheral edge of the liquid pool in a limited manner.
  • the coating film forming method of the present invention comprises: A step of horizontally holding the substrate by the substrate holding portion; Next, a step of supplying a coating liquid for forming a coating film on the surface of the substrate by the coating liquid supply nozzle to the substrate to form a local liquid pool in the center of the substrate; Thereafter, a dilution liquid supply nozzle is used to supply a dilution liquid for reducing the viscosity of the coating liquid to the peripheral edge of the liquid reservoir to form a mixed liquid in which the coating liquid is diluted; Thereafter, the substrate is rotated by a rotating mechanism that rotates the substrate through the substrate holding unit, and the mixed liquid is spread toward the peripheral portion of the substrate by centrifugal force, and the peripheral portion of the substrate is mixed. Coating with a liquid, and extending the liquid pool toward the peripheral edge of the substrate coated with the mixed liquid to form the coating film; and It is characterized by including.
  • the storage medium of the present invention is a storage medium for storing a computer program used in a coating film forming apparatus for forming a coating film on a substrate,
  • the computer program includes a group of steps for carrying out the above-described coating film forming method.
  • the dilution liquid is supplied to the peripheral portion of the liquid pool to form the mixed liquid, and then the centrifugal force of the rotation of the substrate
  • the peripheral edge of the substrate is coated with the mixed solution, and further coating the peripheral edge of the substrate supplied with the mixed liquid with the coating liquid, a coating film is formed.
  • the coating liquid spreads around the peripheral edge of the substrate while mixing with the mixed liquid previously supplied to the peripheral edge of the substrate, so that drying of the coating liquid can be suppressed, and as a result, the coating property of the coating liquid on the substrate Therefore, it is possible to prevent bubbles from being mixed into the coating film.
  • FIG. 1 is a perspective view of a resist film forming apparatus according to an embodiment of the present invention. It is a top view of the said resist film forming apparatus. It is a top view which shows an example of the wafer processed with the said resist film formation apparatus. It is a vertical side view of the wafer. It is a schematic perspective view which shows the process in which a resist film is formed in the said wafer. It is a schematic perspective view which shows the process in which a resist film is formed in the said wafer. It is a schematic perspective view which shows the process in which a resist film is formed in the said wafer. It is a schematic perspective view which shows the process in which a resist film is formed in the said wafer. It is a schematic perspective view which shows the process in which a resist film is formed in the said wafer. It is a schematic perspective view which shows the process in which a resist film is formed in the said wafer.
  • a resist film forming apparatus 1 according to an embodiment of a coating film forming apparatus of the present invention will be described with reference to a perspective view of FIG. 1 and a longitudinal side view of FIG.
  • the resist film forming apparatus 1 supplies a resist as a coating liquid to the surface of a wafer W that is a substrate, and forms a resist film as a coating film.
  • reference numeral 11 denotes a spin chuck that is a substrate holding unit, which adsorbs the center of the back surface of the wafer W and holds the wafer W horizontally.
  • reference numeral 12 denotes a rotation mechanism, which is connected to the spin chuck 11 via a shaft portion 13. The rotation mechanism 12 rotates the spin chuck 11 so that the wafer W held by the spin chuck 11 rotates about its central axis.
  • 14 is a horizontal circular plate, and is provided on the lower side of the spin chuck 11 so as to surround the shaft portion 13.
  • reference numeral 15 denotes lifting pins provided so as to penetrate the circular plate 14, and three are provided so as to support the wafer W (only two are shown in FIG. 2).
  • These elevating pins 15 are configured to be movable up and down by an elevating mechanism 16, and the wafer W is transferred between the conveyance mechanism outside the resist film forming apparatus 1 and the spin chuck 11 by the elevating and lowering.
  • the cup 2 is a cup, which is provided so as to surround the spin chuck 11.
  • the cup 2 has a role of receiving the drained liquid that is scattered or spilled from the rotating wafer W and discharges the drained liquid to the outside of the resist film forming apparatus 1.
  • the cup 2 includes a mountain-shaped guide portion 21 having a mountain-shaped cross-section provided around the circular plate 14 and extending downward from the outer peripheral end of the mountain-shaped guide portion 21.
  • a wall 22 is provided.
  • the chevron guide portion 21 guides the liquid spilled from the wafer W to the lower side outside the wafer W.
  • a vertical cylindrical portion 23 is provided so as to surround the outer side of the mountain-shaped guide portion 21, and an intermediate guide portion 24 that extends obliquely from the upper edge of the cylindrical portion 23 toward the upper inside.
  • the intermediate guide portion 24 is provided with a plurality of openings 25 in the circumferential direction.
  • a cylindrical portion 26 is provided so as to extend upward from the base end side peripheral edge of the intermediate guide portion 24, and an inclined wall 27 is provided so as to extend inward and upward from the upper edge of the cylindrical portion 26.
  • the lower side of the cylindrical portion 23 is formed as a ring-shaped liquid receiving portion 31 having a concave section in the cross section below the mountain-shaped guide portion 21 and the vertical wall 22.
  • a drainage path 32 is connected to the outer peripheral side, and the liquid splashed by the rotation of the wafer W is received by the inclined wall 27, the intermediate guide portion 24, and the cylindrical portion 23 to be drained. It is introduced into the path 32.
  • an exhaust pipe 33 is provided on the inner peripheral side of the drainage passage 32 so as to protrude from below, and the inside of the cup 2 is exhausted during the processing of the wafer W.
  • reference numeral 41 denotes a vertical cylindrical resist supply nozzle, which discharges the resist vertically downward.
  • reference numeral 42 denotes a resist supply unit.
  • the resist supply unit 42 includes, for example, a tank for storing resist, a pump, a filter, a valve, and the like, and can supply the resist to the resist supply nozzle 41 from the tank at a predetermined flow rate.
  • the viscosity of the resist supplied from the resist supply unit 42 to the resist supply nozzle 41 and discharged onto the wafer W is, for example, 500 cP to 5000 cP.
  • reference numeral 43 denotes an arm that supports the resist supply nozzle 41 on the distal end side, and the proximal end side of the arm 43 is connected to the moving mechanism 44.
  • the moving mechanism 44 is configured to move the arm 43 up and down and to move in the horizontal direction along the guide rail 45.
  • reference numeral 46 denotes a standby unit that waits for the resist supply nozzle 41 when the wafer W is not processed.
  • 51 is a vertical cylindrical thinner supply nozzle, which discharges the thinner, which is the solvent of the resist, vertically downward.
  • 52 is a thinner supply unit.
  • the thinner supply unit 52 includes, for example, a tank for storing the thinner, a pump, a filter, a valve, and the like.
  • the thinner can be supplied from the tank to the thinner supply nozzle 51 at a predetermined flow rate.
  • This thinner is, for example, a solvent contained in the resist, and serves as a diluent for diluting the resist and a processing solution for improving the wettability (prewetting) of the resist and the diluted resist on the wafer W surface. Used as
  • reference numeral 53 denotes an arm that supports the thinner supply nozzle 51 at the distal end side, and the proximal end side of the arm 53 is connected to the moving mechanism 54.
  • the moving mechanism 54 is configured to move the arm 53 up and down and to move in the horizontal direction along the guide rail 55. By the horizontal movement of the moving mechanism 54, the position at which the thinner is discharged on the diameter of the wafer W surface can be moved along the radial direction of the wafer W.
  • reference numeral 56 denotes a standby unit that waits the thinner supply nozzle 51 when the wafer W is not processed. In FIG. 1, the intervals at which the cup 2 and the standby units 46 and 56 are arranged are exaggerated.
  • the resist film forming apparatus 1 is provided with a control unit 10 which is a computer.
  • a program stored in a storage medium such as a flexible disk, a compact disk, a hard disk, an MO (magneto-optical disk), and a memory card is installed in the control unit 10.
  • the installed program includes a command (each step) to transmit a control signal to each part of the resist film forming apparatus 1 and control its operation.
  • the rotation speed of the wafer W is changed by the rotation mechanism 12
  • the resist supply nozzle 41 and the thinner supply nozzle 51 are moved by the moving mechanisms 44 and 54, and the resist is supplied from the resist supply unit 42 to the resist supply nozzle 41.
  • the operation of the thinner supply unit 52 to the thinner supply nozzle 51 is controlled by the program.
  • the wafer W is a circular substrate having a diameter of 300 mm, for example.
  • a large number of grooves 61 are formed in a lattice pattern on the surface of the wafer W.
  • FIG. 4 is a longitudinal side view of the wafer W.
  • the depth of the groove 61 indicated by H1 is, for example, 5 ⁇ m to 100 ⁇ m
  • the width of the groove 61 indicated by L0 is, for example, 50 ⁇ m to 500 ⁇ m.
  • FIG. 5 to FIG. 10 are schematic perspective views showing the state of the surface of the wafer W and the operation of the nozzles 41 and 51 in the processing step of forming a resist film on the wafer W by the resist film forming apparatus 1.
  • the description will be given with reference.
  • FIGS. 11 to 14 are schematic views of the longitudinal side surface of the wafer W as appropriate.
  • the wafer W described with reference to FIG. 3 is transferred to the resist film forming apparatus 1 by the transfer mechanism, and the center of the back surface of the wafer W is attracted and held by the spin chuck 11 via the lift pins 15. Then, the wafer W is rotated at, for example, 100 rpm, and the thinner 50 is discharged from the thinner supply nozzle 51 located on the central portion of the wafer W to the central portion of the wafer W. Then, the number of rotations of the wafer W is increased to, for example, 1000 rpm, and the thinner 50 is expanded to the peripheral edge of the wafer W by centrifugal force, and pre-wetting is performed (FIG. 5).
  • the discharge of the thinner 50 from the thinner supply nozzle 51 is stopped, the thinner supply nozzle 51 moves closer to the peripheral edge of the wafer W, and the resist supply nozzle 41 is disposed on the center of the wafer W.
  • the wafer W rotates at, for example, 10 rpm, and the resist 40 is discharged from the resist supply nozzle 41 onto the center of the wafer W.
  • the resist 40 causes a circular liquid reservoir A1 in a plan view to locally reach the center of the wafer W. (FIG. 6).
  • the discharge of the resist 40 from the supply nozzle 41 is stopped, and the rotation speed of the wafer W is increased to, for example, 200 rpm, and the surface of the liquid pool A1 is flattened by the centrifugal force (FIGS.
  • the distance L1 from the center of the wafer W shown in FIG. 11 to the peripheral edge of the liquid reservoir A1 is, for example, 50 mm. Further, the resist 40 constituting the liquid pool A1 is mixed with the thinner 50 supplied by the prewetting into the groove 61 below the liquid pool A1, and enters the groove 61.
  • the rotational speed of the wafer W is lowered to, for example, 60 rpm, and the thinner 50 is supplied from the thinner supply nozzle 51 to the peripheral portion of the liquid reservoir A1. Since the wafer W is rotating, the thinner 50 does not flow from the position supplied to the liquid reservoir A1 to the central portion side of the wafer W due to the action of centrifugal force, but flows from the supplied position to the peripheral edge side of the wafer W. . Thereby, the resist 40 constituting the peripheral edge of the liquid reservoir A1 is limitedly diluted by the thinner 50, so that the viscosity is lower than that of the resist 40 and the fluidity is high. This diluted resist 40 is shown as a mixed solution A2.
  • the mixed liquid A2 exists around the liquid pool A1 of the resist 40 (FIGS. 8 and 12).
  • the distance L2 from the center of the wafer W shown in FIG. 12 to the position where the thinner 50 is supplied is, for example, 40 mm.
  • the position where the thinner 50 is supplied is a projection area on the wafer W in the discharge direction of the thinner with respect to the discharge port provided in the thinner supply nozzle 51.
  • the thinner 50 supplied to the peripheral edge of the wafer W by prewetting is omitted in order to avoid complication of the drawings.
  • the discharge of the thinner 50 is stopped, and the rotation speed of the wafer W is increased to, for example, 1800 rpm.
  • the liquid mixture A2 has a lower viscosity than the resist 40 constituting the liquid reservoir A1
  • the peripheral portion of the wafer W covered with the prewetting thinner 50 is increased by an increase in centrifugal force due to the increase in the rotational speed.
  • the wafer W is spread quickly toward the peripheral edge of the wafer W.
  • the liquid mixture A2 has a relatively low viscosity, and therefore does not cause fingering, that is, branching spread, and spreads with high uniformity when viewed in the circumferential direction of the wafer W. Furthermore, the formation of a pattern called striation is also suppressed.
  • the mixed liquid A2 enters the groove 61 which is a recess, and the groove 61 is filled with the mixed liquid A2. More specifically, the mixed liquid A2 enters the groove 61 by being mixed with the thinner 50 that has entered the groove 61 by prewetting.
  • the spread of the mixed liquid A2 proceeds, and the entire periphery of the wafer W is covered with the mixed liquid A2 (FIGS. 9 and 13).
  • the liquid pool A1 constituted by the resist 40 is also spread toward the peripheral edge of the wafer W. Since the viscosity of the resist 40 is higher than the viscosity of the liquid mixture A2, the speed at which the outer edge of the liquid pool A1 moves is slower than the speed at which the liquid mixture A2 moves. Accordingly, since the resist 40 extends the peripheral edge of the wafer W already covered with the mixed liquid A2, the outer edge of the liquid reservoir A1 moves toward the peripheral edge of the wafer W while being mixed with the mixed liquid A2.
  • the resist 40 constituting the liquid pool A1 located on the groove 61 mixes with the mixed liquid A2 in the groove 61, and enters the groove 61.
  • the processing of the comparative example after the formation of the liquid pool A1 of the resist 40, the liquid pool A1 is formed.
  • a process for forming a resist film without supplying the thinner 50 to the peripheral edge of the resist will be described with reference to FIGS. 15 and 16 showing the state of the resist 40.
  • the processing of this comparative example is the same as the processing of the embodiment of the invention except that the thinner 50 is not supplied to the peripheral edge of the liquid reservoir A1.
  • the rotational speed of the wafer W is increased in order to expand the liquid pool A1 (FIG. 15).
  • the outer edge of the liquid reservoir A1 is dried, and the above-mentioned branching occurs due to the increase in the viscosity of the resist 40.
  • the branches of the resist 40 caused by branching as seen from the peripheral edge of the wafer W toward the center are shown. Air on the surface of the wafer W is entrained when the branches of the resist 40 spread.
  • the thinner 50 is supplied to the peripheral edge of the wafer W by prewetting before the formation of the liquid pool A1, but the mixing of the bubbles 62 is sufficiently suppressed as shown in an evaluation test described later. It has been confirmed that it cannot be done. This is presumably because the volatilization of the thinner 50 proceeds by rotating the wafer W at a relatively high rotational speed when the liquid pool A1 is expanded.
  • the thinner 50 is limited to the peripheral edge of the liquid pool A1.
  • the mixed liquid A2 is formed to cover the peripheral portion of the wafer W with the mixed liquid A2 by the centrifugal force of the rotation of the wafer W, and the resist 40 constituting the central portion of the liquid reservoir A1 is coated with the peripheral edge of the wafer W.
  • the resist film 60 is formed by spreading the portion.
  • the resist 40 constituting the liquid reservoir A1 is spread toward the peripheral edge of the wafer W while being mixed with the mixed liquid A2 previously supplied to the peripheral portion of the wafer W, the viscosity of the resist 40 is increased by drying. Can be suppressed. Therefore, as described with reference to FIGS. 15 and 16, the resist 40 branches off and spreads irregularly, so that air is mixed into the resist 40 or the groove 61 is not sufficiently penetrated. It is possible to prevent a problem that air remains on the surface. As a result, it is possible to prevent bubbles from entering the resist film 60. Further, since the thinner 50 is supplied only to the peripheral edge of the liquid pool A1 of the resist 40, excessive dilution of the resist 40 can be prevented. Therefore, the controllability of the film thickness of the resist film 60 can be increased, and the resist film 60 can be formed to have a relatively large film thickness.
  • the mixed liquid A2 is supplied to the peripheral edge of the wafer W, and after this pre-wetting, as described with reference to FIGS. It is conceivable that the liquid pool A1 is spread on the peripheral edge of the wafer W without supplying the thinner 50 to A1. However, in this case, the thinner 50 in the mixed liquid A2 is volatilized after the mixed liquid A2 is supplied to the wafer W until the resist 40 is discharged onto the wafer W and spread to the peripheral edge of the wafer W. There is a risk that.
  • the liquid mixture A2 is stored in the tank, and the liquid mixture A2 in the tank is discharged from the nozzle onto the wafer W and pre-wetting is performed in this way, the liquid mixture A2 is adjusted before being stored in the tank. Because it is necessary to keep going.
  • the mixed liquid A2 is formed in a state where the resist 40 is already supplied to the wafer W, and then the mixed liquid A2 and the resist 40 are quickly formed.
  • the wafer W can be extended to the peripheral edge.
  • the discharge time of the thinner 50 is appropriately set. For example, the discharge time is 1 to 30 seconds, and in the above processing, the thinner is discharged for 20 seconds.
  • the rotational speed of the wafer W is increased in order to expand the mixed liquid A2 and the resist 40.
  • the thinner 50 may be continuously discharged during the ascent, and the thinner may be supplied to the liquid pool A1 of the resist 40 being expanded.
  • the discharge may be stopped to ensure that the mixed liquid A2 covers the peripheral edge of the wafer W.
  • the rotation speed of the wafer W is set to 200 rpm in order to level the surface of the liquid pool A1 of the resist 40, and then the thinner 50 is supplied to the liquid pool A1 of the resist 40.
  • the wafer W is rotated at 60 rpm. The reason why the rotational speed is reduced in this way is that if the rotational speed of the wafer W at the time of supplying the thinner 50 is too large, drying of the formed mixed liquid A2 proceeds, and the liquid pool A1 of the resist 40 is removed. This is because the viscosity of the liquid pool A1 cannot be sufficiently reduced when the film is stretched.
  • the rotational speed of the wafer W when the thinner 50 is supplied is not limited to 60 rpm, but is preferably set to 500 rpm or less from the viewpoint of suppressing the drying of the mixed solution A2.
  • the resist viscosity is 500 cP, it may be 20 rpm, and when it is 5000 cP, it may be 500 rpm.
  • the rotation speed of the wafer W is increased as described above in order to increase the centrifugal force and perform the expansion.
  • the rotational speed (first rotational speed) of the wafer W when discharging the thinner 50 to form the mixed liquid A2 is the rotational speed (second rotational speed) when the mixed liquid A2 and the liquid reservoir A1 are expanded. Lower than the rotation speed).
  • the thinner supply nozzle 51 is stationary when the thinner 50 is discharged to form the mixed liquid A2.
  • the supply nozzle 51 may be moved to move the position at which the thinner 50 is discharged along the radial direction of the wafer W (that is, the radial direction of the liquid pool A1 and the mixed liquid A2).
  • the thinner supply nozzle 51 is placed on the peripheral edge of the liquid reservoir A1.
  • the resist 40 constituting the peripheral edge of the liquid reservoir A1 is further stirred together with the thinner 50, and the viscosity of the liquid mixture A2 formed is formed. Can be reliably reduced. As a result, the entire peripheral edge of the wafer W can be more reliably covered with the mixed liquid A2, and the mixing of bubbles into the resist film 60 can be suppressed.
  • the discharge of the thinner 50 is started outside the liquid reservoir A1 in the vicinity of the liquid reservoir A1, and the thinner supply nozzle 51 moves onto the peripheral edge of the liquid reservoir A1 while discharging the thinner 50.
  • the thinner 50 is supplied to the peripheral edge.
  • the discharge start position of the thinner 50 is set to the outside of the liquid reservoir A1 in this way because the air between the thinner supply nozzle 51 and the wafer W is discharged by the thinner 50 started to discharge from the thinner supply nozzle 51.
  • the purpose is to reliably prevent the liquid from being pushed and mixed into the liquid reservoir A1.
  • the thinner supply nozzle 51 in a state where the thinner 50 is discharged may be moved from the center side of the wafer W to the peripheral end side. That is, the thinner supply nozzle 51 may be moved in the direction opposite to the direction shown in FIG.
  • the thinner 50 can be discharged from the thinner supply nozzle 51 and the thinner supply nozzle 51 can be moved.
  • the operation of the thinner supply nozzle 51 can be controlled as follows. First, as described with reference to FIG. 12, the thinner 50 is discharged to the periphery of the liquid pool A1 of the resist 40 to form a mixed liquid A2. Thereafter, while the thinner 50 is being discharged, the number of rotations of the wafer W is increased in the same manner as in the processing example described above, and the liquid pool A1 is expanded toward the peripheral edge of the wafer W.
  • the thinner supply nozzle 51 is moved so that the position where the thinner 50 is supplied on the wafer W corresponds to the position of the end of the liquid reservoir A1 to be expanded. Specifically, for example, as shown in FIGS. 18 and 19, the thinner supply nozzle 51 is moved toward the peripheral edge side of the wafer W at the same speed as the moving speed of the end of the liquid reservoir A1, and the liquid pool to be expanded is expanded. The thinner 50 is continuously discharged to the end of A1. By moving the thinner supply nozzle 51 in this way, the end of the liquid reservoir A1 moves so as to follow the discharge position of the thinner 50 on the wafer W, and during the expansion of the liquid reservoir A1, the liquid reservoir A1 is moved. As seen from the front, a new mixed liquid A2 continues to be generated in the front. By supplying the thinner 50 in this way, drying of the liquid pool A1 during extension can be more reliably suppressed.
  • the thinner supply nozzle 51 may be discharged until the discharge position of the thinner 50 reaches the peripheral edge of the wafer W, or before reaching the peripheral edge. Alternatively, the discharge of the thinner 50 may be stopped. In order to change the position at which the thinner 50 is discharged along the radial direction of the wafer W in this way, the thinner supply nozzle 51 is not limited to be moved in the lateral direction.
  • An inclination adjusting mechanism for changing the inclination of the thinner supply nozzle 51 may be provided and the inclination of the thinner supply nozzle 51 may be changed.
  • the resist dilution liquid will be described in more detail.
  • This dilution liquid has solubility in chemical components constituting the resist and can be mixed with the resist, and the viscosity of the resist is reduced by mixing. Any liquid can be used.
  • the prewetting processing liquid will be described in detail.
  • the resist 40 supplied to the central portion of the wafer W is improved in wettability on the surface of the wafer W, and the resist can enter the groove 61.
  • a liquid that has solubility in chemical components constituting the resist can be mixed with the resist, and has a property of reducing the viscosity of the resist by being mixed can be used. Therefore, for example, an organic solvent that is not contained in the resist may be used as the diluting solution and the prewetting processing solution.
  • the dilution liquid and the prewetting treatment liquid may be liquids composed of different compounds.
  • the resist film is formed on the surface of the wafer W in which the groove 61 is formed as a recess, but the resist film is formed on the surface of the wafer W in which the recess is not formed. Even in this case, the processing of this embodiment is effective.
  • the thinner supply nozzle 51 is not limited to discharging the liquid flow of the thinner 50 as in the above-described example, and the mist-like thinner 50 or the vapor of the thinner 50 may be discharged. However, in order to dilute the resist quickly and sufficiently, it is preferable to discharge the liquid flow. Further, the thinner is not limited to being supplied continuously, and may be supplied intermittently.
  • the thinner when supplying the thinner to the peripheral edge of the liquid reservoir A1, the thinner may be supplied from a plurality of nozzles arranged along the circumferential direction of the wafer W. Therefore, when the thinner is supplied, the wafer W is kept stationary. You may be in the state.
  • the present invention can also be applied when forming a coating film other than a resist film.
  • the present invention can also be applied to the case where an antireflection film or an insulating film is formed by applying a coating liquid for forming an antireflection film, a coating liquid for forming an insulating film, or the like onto the surface of the substrate. It should be noted that the various embodiments described above can be changed as appropriate or combined with each other.
  • Evaluation test 1-1 a resist film 60 was formed on the wafer W in accordance with the procedure described as the process of the embodiment of the invention described above.
  • evaluation test 1-2 the pre-wetting and the liquid pool A1 of the resist 40 described with reference to FIGS. 5 to 7 are sequentially formed, and then the thinner 50 is supplied to the outside of the liquid pool A1.
  • the resist pool 60 was formed by expanding the liquid pool A1 to the peripheral edge of the wafer W by increasing the rotational speed of the liquid.
  • the liquid reservoir A1 is applied to the peripheral portion of the wafer W in a state where the peripheral portion of the wafer W is covered with the thinner 50 supplied after the formation of the liquid reservoir A1 instead of the liquid mixture A2. Then, the resist film 60 is formed. Further, as evaluation test 1-3, the resist film 60 was formed by performing the process of the comparative example in which the thinner 50 was not supplied to the wafer W after the formation of the liquid pool A1 as described in FIGS.
  • the film thicknesses at many positions along the diameter direction of the wafer W were measured for the resist film 60 formed in the evaluation test 1-1 and the resist film 60 formed in the evaluation test 1-3.
  • the measurement result of the wafer W of the evaluation test 1-1 is indicated by a solid line
  • the measurement result of the wafer W of the evaluation test 1-3 is indicated by a dotted line.
  • the vertical axis of the graph represents the measured film thickness (unit: ⁇ m)
  • the horizontal axis of the graph represents each position of the diameter of the wafer W where the film thickness was measured with a numerical value of 0 to 50. The horizontal axis will be further described.
  • the film thickness non-uniformity was calculated by the following formula 1. The smaller the non-uniformity value of the film thickness, the smaller the film thickness variation in the plane of the wafer W.
  • the film thickness non-uniformity of the resist film formed in Evaluation Test 1-1 is 4.43%, and the film thickness non-uniformity of the resist film formed in Evaluation Test 1-3 is 8.0%. Was smaller than.
  • Film thickness non-uniformity (%) ((maximum value of measured film thickness ⁇ minimum value of film thickness measured) / average value of film thickness measured) ⁇ 100 (1)
  • A1 Liquid pool A2 Liquid mixture W Wafer 1
  • Control unit 11 Spin chuck 12
  • Rotating mechanism 40 Resist 41
  • Resist supply nozzle 51 Thinner supply nozzle

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PCT/JP2017/015718 2016-05-13 2017-04-19 塗布膜形成装置、塗布膜形成方法及び記憶媒体 WO2017195549A1 (ja)

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