WO2017187738A1 - Élément de prise de vues, endoscope et système endoscopique - Google Patents

Élément de prise de vues, endoscope et système endoscopique Download PDF

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Publication number
WO2017187738A1
WO2017187738A1 PCT/JP2017/006604 JP2017006604W WO2017187738A1 WO 2017187738 A1 WO2017187738 A1 WO 2017187738A1 JP 2017006604 W JP2017006604 W JP 2017006604W WO 2017187738 A1 WO2017187738 A1 WO 2017187738A1
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Prior art keywords
chip
unit
imaging
signal
pixel
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PCT/JP2017/006604
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English (en)
Japanese (ja)
Inventor
田中　孝典
匡史 齋藤
考俊 五十嵐
理 足立
克己 細貝
奈々 赤羽
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オリンパス株式会社
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Priority to CN201780022469.7A priority Critical patent/CN108886043B/zh
Priority to DE112017002162.6T priority patent/DE112017002162T5/de
Priority to JP2018508251A priority patent/JP6439076B2/ja
Publication of WO2017187738A1 publication Critical patent/WO2017187738A1/fr
Priority to US16/152,629 priority patent/US10542226B2/en

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/00002—Operational features of endoscopes
    • A61B1/00004—Operational features of endoscopes characterised by electronic signal processing
    • A61B1/00009—Operational features of endoscopes characterised by electronic signal processing of image signals during a use of endoscope
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
    • A61B1/045—Control thereof
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
    • A61B1/05—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances characterised by the image sensor, e.g. camera, being in the distal end portion
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B23/00—Telescopes, e.g. binoculars; Periscopes; Instruments for viewing the inside of hollow bodies; Viewfinders; Optical aiming or sighting devices
    • G02B23/24—Instruments or systems for viewing the inside of hollow bodies, e.g. fibrescopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H04N25/441—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array by reading contiguous pixels from selected rows or columns of the array, e.g. interlaced scanning
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Definitions

  • the present invention relates to an imaging device, an endoscope, and an endoscope system that capture an image of a subject and generate image data of the subject.
  • an imaging signal captured by an imaging device provided at the distal end of an insertion portion to be inserted into a body cavity needs to be cable transmitted to an image processing apparatus.
  • the imaging signal is transmitted as a cable with an analog signal, the pixel rate is limited, and it is difficult to improve the image quality by increasing the number of pixels of the imaging element.
  • an imaging device for an endoscope needs to include an A / D conversion circuit that digitally A / D converts an analog imaging signal.
  • Patent Document 1 discloses a column parallel AD conversion circuit in which peripheral circuits are arranged on separate chips in order to reduce the chip area. According to this technique, a chip having a pixel region and a chip having a peripheral circuit are stacked, and the chips are connected by a TSV (Through-Silicon Via: Si through electrode) or the like.
  • TSV Through-Silicon Via: Si through electrode
  • the present invention has been made in view of the above, and an object thereof is to provide an imaging device, an endoscope, and an endoscope system that can realize further miniaturization.
  • an imaging device includes a light receiving unit in which a plurality of pixels that generate and output an imaging signal corresponding to the amount of received light are arranged in a two-dimensional matrix.
  • a light receiving unit in which a plurality of pixels that generate and output an imaging signal corresponding to the amount of received light are arranged in a two-dimensional matrix.
  • a plurality of units for performing a predetermined function.
  • Each of the first chip, the second chip, and the capacitor chip has a connection part that electrically connects the chips, and the connection part is a part of the light receiving part.
  • Direction perpendicular to the light receiving surface Characterized by comprising been arranged to overlap as viewed al.
  • the image pickup device in the above invention, is stacked and connected along a direction orthogonal to the light receiving surface of the pixel portion, and at least a transmission portion that transmits the image pickup signal to a transmission cable is disposed.
  • a reading unit that sequentially selects a predetermined pixel from the plurality of pixels, and reads the imaging signal output from the selected pixel; and the reading unit
  • a timing control unit that controls timing for reading out the imaging signal output from the selected pixel, and A / D conversion that performs A / D conversion on the analog imaging signal output from the first chip It is characterized by including a part.
  • the third chip is stacked and connected to a back surface side of the stacked surface of the second chip, and the capacitor chip is stacked of the third chip. It is characterized by being laminated and connected to the back side of the surface.
  • the capacitor chip is stacked and connected between the first chip and the second chip or between the second chip and the third chip. It is characterized by.
  • a plurality of the capacitor chips are stacked and connected along a direction orthogonal to a surface on which the first chip and the second chip are stacked. It is characterized by.
  • the image pickup device is characterized in that, in the above-described invention, further provided is a probing pad for contacting an inspection probe so as to overlap the connection portion.
  • the probing pad is formed on the first chip so as to overlap the connection portion when viewed from the light receiving surface side of the pixel portion. .
  • the image pickup device further includes a cover glass laminated on the surface of the first chip including the position of the probing pad along a direction orthogonal to the light receiving surface of the pixel unit. It is characterized by that.
  • the probing pad is formed so as to overlap the connection portion on the back surface side of the light receiving surface of the pixel portion when viewed from the light receiving surface side of the pixel portion. It is characterized by that.
  • the plurality of function execution units sequentially select predetermined pixels from the plurality of pixels, and read out the imaging signals output from the selected pixels.
  • a timing control unit that controls timing at which the readout unit reads out the imaging signal output from the selected pixel, and amplifies the analog imaging signal output from the first chip and transmits it to a transmission cable Including a transmission unit.
  • the transmission unit transmits a driver for transmitting the imaging signal to the transmission cable by a differential method
  • a clock signal input from the outside is the A / D conversion unit.
  • a multiplier that outputs a high-speed clock signal multiplied according to the number of bits
  • the A / D converter converts the imaging signal read from the read unit into a multi-bit digital signal And converting the parallel digital signal into a serial digital signal based on the high-speed clock signal output from the multiplier, and converting the serial digital signal through the driver.
  • a serializer for transmitting to the transmission cable.
  • the imaging device is the imaging device according to the first aspect, wherein the timing control unit generates a control signal for driving a vertical selection unit that reads the imaging signal from the pixel unit to a vertical transfer line; A second timing control unit that generates a control signal for driving another function execution unit, and the first timing control unit is arranged in the third chip, and the second timing control unit , Arranged on the second chip.
  • an endoscope according to the present invention is characterized in that the above-described imaging device is provided on the distal end side of an insertion portion that can be inserted into a subject.
  • an endoscope system includes the endoscope described above and an image processing device that converts the imaging signal into an image signal.
  • FIG. 1 is a schematic diagram schematically showing an overall configuration of an endoscope system according to Embodiment 1 of the present invention.
  • FIG. 2 is a block diagram showing functions of main parts of the endoscope system according to Embodiment 1 of the present invention.
  • FIG. 3 is a top view of the image sensor according to Embodiment 1 of the present invention.
  • FIG. 4 is a perspective view of the image sensor according to Embodiment 1 of the present invention.
  • 5 is a cross-sectional view taken along line AA in FIG. 6A is a cross-sectional view taken along line BB in FIG. 6B is a cross-sectional view taken along the line CC of FIG. 6C is a cross-sectional view taken along the line DD of FIG.
  • FIG. 6D is a cross-sectional view taken along line EE of FIG.
  • FIG. 7 is a flowchart showing an overview of a method of manufacturing the image sensor according to Embodiment 1 of the present invention.
  • FIG. 8A is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 7.
  • FIG. 8B is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 7.
  • FIG. 8C is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 7.
  • FIG. 8D is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 7.
  • FIG. 8E is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 7.
  • FIG. 8A is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 7.
  • FIG. 8B is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process
  • FIG. 8F is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 7.
  • FIG. 8G is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 7.
  • FIG. 8H is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 7.
  • FIG. 8I is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG.
  • FIG. 8J is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 7.
  • FIG. 8K is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 7.
  • FIG. 8L is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 7.
  • FIG. 8M is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 7.
  • FIG. 8N is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 7.
  • FIG. 9 is a timing chart showing the operation of the image sensor according to Embodiment 1 of the present invention.
  • FIG. 10A is a plan view schematically showing a first chip forming an image sensor according to a modification of Embodiment 1 of the present invention.
  • FIG. 10B is a plan view schematically showing a second chip forming the imaging element according to the modification of Embodiment 1 of the present invention.
  • FIG. 10C is a plan view schematically showing a third chip forming the imaging element according to the modification of Embodiment 1 of the present invention.
  • FIG. 10A is a plan view schematically showing a first chip forming an image sensor according to a modification of Embodiment 1 of the present invention.
  • FIG. 10B is a plan view schematically showing
  • FIG. 10D is a plan view schematically showing a fourth chip forming the imaging element according to the modification of Embodiment 1 of the present invention.
  • FIG. 11A is a plan view schematically showing a first chip forming another imaging device according to the modification of Embodiment 1 of the present invention.
  • FIG. 11B is a plan view schematically showing a second chip forming another imaging device according to the modification of Embodiment 1 of the present invention.
  • FIG. 11C is a plan view schematically showing a third chip forming another imaging device according to the modification of Embodiment 1 of the present invention.
  • FIG. 11D is a plan view schematically showing a fourth chip forming another imaging device according to the modification of Embodiment 1 of the present invention.
  • FIG. 11A is a plan view schematically showing a first chip forming another imaging device according to the modification of Embodiment 1 of the present invention.
  • FIG. 11B is a plan view schematically showing a second chip forming another imaging device according to the modification of
  • FIG. 12 is a block diagram illustrating functions of main parts of the endoscope system according to Embodiment 2 of the present invention.
  • FIG. 13A is a plan view schematically showing a first chip forming an imaging element according to Embodiment 2 of the present invention.
  • FIG. 13B is a plan view schematically showing the second chip forming the imaging element according to Embodiment 2 of the present invention.
  • FIG. 13C is a plan view schematically showing a third chip forming the imaging element according to Embodiment 2 of the present invention.
  • FIG. 13D is a plan view schematically showing a fourth chip forming the imaging element according to Embodiment 2 of the present invention.
  • FIG. 14 is a timing chart showing the operation of the image sensor according to Embodiment 2 of the present invention.
  • FIG. 15 is a block diagram showing functions of main parts of the endoscope system according to Embodiment 3 of the present invention.
  • FIG. 16A is a plan view of the first chip of the imaging element according to Embodiment 4 of the present invention.
  • FIG. 16B is a plan view of the second chip of the image sensor according to Embodiment 4 of the present invention.
  • FIG. 16C is a plan view of the third chip of the imaging element according to Embodiment 4 of the present invention.
  • FIG. 17 is a top view of an image sensor according to Embodiment 5 of the present invention.
  • 18 is a cross-sectional view taken along line FF in FIG.
  • FIG. 19A is a plan view of the first chip of the imaging element according to Embodiment 5 of the present invention.
  • FIG. 19B is a plan view of the second chip of the imaging element according to Embodiment 5 of the present invention.
  • FIG. 19C is a plan view of the third chip of the imaging element according to Embodiment 5 of the present invention.
  • FIG. 20 is a flowchart showing an outline of a method of manufacturing an image sensor according to Embodiment 5 of the present invention.
  • FIG. 21A is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 20.
  • FIG. 21B is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 20.
  • FIG. 21C is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 20.
  • FIG. 21A is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 20.
  • FIG. 21B is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 20.
  • FIG. 21C is a
  • FIG. 21D is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 20.
  • FIG. 21E is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 20.
  • FIG. 21F is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 20.
  • FIG. 21G is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 20.
  • FIG. 21H is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 20.
  • FIG. 21I is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 20.
  • FIG. 21J is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG.
  • FIG. 22 is a flowchart showing an overview of a method of manufacturing an image sensor according to Modification 1 of Embodiment 5 of the present invention.
  • FIG. 23A is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG.
  • FIG. 23B is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 22.
  • FIG. 23C is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 22.
  • FIG. 23D is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 22.
  • FIG. 23E is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 22.
  • FIG. 23A is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG.
  • FIG. 23B is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 22.
  • FIG. 23C is a schematic diagram
  • FIG. 23F is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 22.
  • FIG. 23G is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 22.
  • FIG. 23H is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 22.
  • FIG. 23I is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG.
  • FIG. 23J is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 22.
  • FIG. 23K is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG.
  • FIG. 23L is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 22.
  • FIG. 23G is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 22.
  • FIG. 23H is a schematic diagram illustrating a cross section of the imaging
  • FIG. 24 is a schematic diagram illustrating a cross section of an imaging element according to Modification 2 of Embodiment 5 of the present invention.
  • FIG. 25 is a flowchart showing an overview of a method of manufacturing an image sensor according to Modification 2 of Embodiment 5 of the present invention.
  • FIG. 26A is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 25.
  • FIG. 26B is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 25.
  • FIG. 26C is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 25.
  • FIG. 26D is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 25.
  • FIG. 26A is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 25.
  • FIG. 26B is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 25.
  • FIG. 26E is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 25.
  • FIG. 26F is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 25.
  • FIG. 26G is a schematic diagram illustrating a cross section of the image sensor in the manufacturing process of FIG. 25.
  • FIG. 26H is a schematic diagram illustrating a cross section of the imaging element in the manufacturing process of FIG. 25.
  • FIG. 26I is a schematic diagram illustrating a cross section of the imaging device in the manufacturing process of FIG. 25.
  • FIG. 27A is a plan view of the first chip of the imaging element according to Modification 3 of Embodiment 5 of the present invention.
  • FIG. 27B is a plan view of the second chip of the imaging element according to Modification 3 of Embodiment 5 of the present invention.
  • FIG. 27C is a plan view of the third chip of the imaging element according to Modification 3 of Embodiment 5 of the present invention.
  • an endoscope system including an endoscope provided with an imaging element at a distal end of an insertion portion to be inserted into a subject will be described. To do. Further, the present invention is not limited by this embodiment. Further, in the description of the drawings, the same portions will be described with the same reference numerals. Furthermore, the drawings are schematic, and it should be noted that the relationship between the thickness and width of each member, the ratio of each member, and the like are different from the actual ones. Moreover, the part from which a mutual dimension and ratio differ also in between drawings.
  • FIG. 1 is a schematic diagram schematically showing an overall configuration of an endoscope system according to Embodiment 1 of the present invention.
  • An endoscope system 1 shown in FIG. 1 includes an endoscope 2, a transmission cable 3, a connector unit 5, a processor 6 (image processing device), a display device 7, and a light source device 8.
  • the endoscope 2 images the inside of the subject and outputs an imaging signal (image data) to the processor 6 by inserting the insertion portion 100 which is a part of the transmission cable 3 into the body cavity of the subject.
  • the endoscope 2 is provided on one end side of the transmission cable 3 and on the distal end 101 side of the insertion portion 100 to be inserted into the body cavity of the subject. Yes. Further, the endoscope 2 is provided with an operation unit 4 on the proximal end 102 side of the insertion unit 100 for receiving various operations on the endoscope 2.
  • An image pickup signal of an image picked up by the image pickup device 20 passes through the transmission cable 3 having a length of several meters, for example, and is output to the connector unit 5.
  • the transmission cable 3 connects the endoscope 2 and the connector unit 5, and connects the endoscope 2 and the light source device 8. In addition, the transmission cable 3 propagates the imaging signal generated by the imaging element 20 to the connector unit 5.
  • the transmission cable 3 is configured using a cable, an optical fiber, or the like.
  • the connector unit 5 is connected to the endoscope 2, the processor 6, and the light source device 8, performs predetermined signal processing on the imaging signal output from the connected endoscope 2, and outputs the signal to the processor 6.
  • the processor 6 performs predetermined image processing on the imaging signal input from the connector unit 5 and outputs the processed image signal to the display device 7.
  • the processor 6 comprehensively controls the entire endoscope system 1. For example, the processor 6 performs control to switch the illumination light emitted from the light source device 8 or switch the imaging mode of the endoscope 2.
  • the display device 7 displays an image corresponding to the imaging signal that has been subjected to image processing by the processor 6.
  • the display device 7 displays various information related to the endoscope system 1.
  • the display device 7 is configured using a display panel such as liquid crystal or organic EL (Electro Luminescence).
  • the light source device 8 irradiates illumination light toward the subject from the distal end 101 side of the insertion portion 100 of the endoscope 2 via the connector portion 5 and the transmission cable 3.
  • the light source device 8 is configured using a white LED (Light Emitting Diode) that emits white light, an LED that emits special light of narrow band light having a wavelength band narrower than the wavelength band of white light, and the like.
  • the light source device 8 irradiates the subject with white light or narrow-band light through the endoscope 2 under the control of the processor 6.
  • the light source device 8 is described as a simultaneous type, but it may be a surface sequential type that sequentially irradiates red, green, and blue light.
  • FIG. 2 is a block diagram showing functions of a main part of the endoscope system 1. With reference to FIG. 2, the detail of each part structure of the endoscope system 1 and the path
  • the endoscope 2 includes an image sensor 20, a transmission cable 3, and a connector unit 5.
  • the imaging element 20 includes a first chip 21, a second chip 22, a third chip 23, and a fourth chip 24.
  • the first chip 21, the second chip 22, the third chip 23, and the fourth chip 24 are stacked and connected to each other. Further, the image pickup device 20 receives the power supply voltage VDD generated by the power supply voltage generation unit 54 of the connector unit 5 described later, together with the ground GND, via the transmission cable 3.
  • the first chip 21 is realized by using a CIS (CMOS (Complementary Metal Oxide Semiconductor) Image Sensor) chip. Specifically, the first chip 21 is arranged in a two-dimensional matrix, and is provided with a plurality of pixels 211 a that receive light from the outside and generate and output an imaging signal corresponding to the amount of received light. It has a pixel portion 211 (light receiving portion).
  • CIS Complementary Metal Oxide Semiconductor
  • the pixel unit 211 is realized using a photoelectric conversion element (photodiode), a transfer transistor, a charge-voltage conversion transistor, a pixel output transistor, and the like.
  • a photoelectric conversion element photodiode
  • a transfer transistor a transfer transistor
  • a charge-voltage conversion transistor a charge-voltage conversion transistor
  • a pixel output transistor a pixel output transistor
  • the present invention is not limited to this.
  • four pixels 211a are read with one vertical transfer line. It may be one that shares four pixels, one that shares eight pixels that reads eight pixels 211a with one vertical transfer line, or one that reads one pixel 211a with one vertical transfer line.
  • the second chip 22 is realized by using an ADC (Analog-to-Digital Converter) chip.
  • the second chip 22 includes a column reading unit 221, a timing control unit 222, and an A / D conversion unit 223.
  • the column readout unit 221 sequentially selects a predetermined pixel from the plurality of pixels 211a in the pixel unit 211 based on a signal input from the timing control unit 222, reads out an imaging signal from the selected pixel, and performs an A / D conversion unit. To 223.
  • the timing control unit 222 generates a timing signal based on the reference clock signal and the synchronization signal input from the connector unit 5, and outputs the timing signal to the column reading unit 221.
  • the A / D conversion unit 223 converts the analog imaging signal input from the column reading unit 221 into a digital imaging signal and outputs the digital imaging signal to the transmission unit 231 of the third chip 23 described later.
  • the third chip 23 is realized using an IF (interface) chip.
  • the third chip 23 drives the transmission unit 231 and a transmission unit 231 that performs parallel-serial conversion on the multi-bit digital imaging signal input from the A / D conversion unit 223 and transmits the signal to the transmission cable 3 in a differential manner.
  • the fourth chip 24 is realized using a capacity chip.
  • the fourth chip 24 is provided between the power supply voltage VDD supplied to the image sensor 20 and the ground GND, and includes a power supply stabilization bypass capacitor 241.
  • the fourth chip functions as a capacitor chip.
  • the connector unit 5 includes a reception unit 51, an imaging signal processing unit 52, a synchronization signal generation unit 53, and a power supply voltage generation unit 54.
  • the receiving unit 51 receives the differential imaging signal transmitted from the imaging device 20, performs serial-parallel conversion, and outputs it to the imaging signal processing unit 52.
  • the imaging signal processing unit 52 is configured by, for example, an FPGA (Field Programmable Gate Array), and performs processing such as noise removal and format conversion processing on the digital imaging signal input from the reception unit 51 and outputs the processed signal to the processor 6. To do.
  • FPGA Field Programmable Gate Array
  • the synchronization signal generation unit 53 is supplied from the processor 6 and is a synchronization that represents the start position of each frame based on a reference clock signal (for example, a 27 MHz clock signal) that serves as a reference for the operation of each component of the endoscope 2.
  • a signal is generated and output to the timing controller 222 of the image sensor 20 via the transmission cable 3 together with the reference clock signal.
  • the synchronization signal generated by the synchronization signal generation unit 53 includes a horizontal synchronization signal and a vertical synchronization signal.
  • the power supply voltage generation unit 54 generates a power supply voltage necessary for driving each of the first chip 21, the second chip 22, the third chip 23, and the fourth chip 24 from the power supplied from the processor 6.
  • the data is output to the first chip 21, the second chip 22, the third chip 23, and the fourth chip 24.
  • the power supply voltage generation unit 54 generates a power supply voltage necessary for driving the first chip 21, the second chip 22, the third chip 23, and the fourth chip 24 using a regulator or the like.
  • the processor 6 is a control device that comprehensively controls the entire endoscope system 1.
  • the processor 6 includes an image processing unit 61, a recording unit 62, an input unit 63, a clock generation unit 64, a power supply unit 65, and a processor control unit 66.
  • the image processing unit 61 performs synchronization processing, white balance (WB) adjustment processing, gain adjustment processing, gamma correction processing, digital analog (D) on the digital imaging signal that has been subjected to signal processing by the imaging signal processing unit 52.
  • WB white balance
  • D digital analog
  • Image processing such as conversion processing and format conversion processing is performed to convert it into an image signal, and this imaging signal is output to the display device 7 (display unit).
  • the recording unit 62 records various information related to the endoscope system 1, data being processed, and the like.
  • the recording unit 62 is configured using a recording medium such as a flash memory or a RAM (Random Access Memory).
  • the input unit 63 receives input of various operations related to the endoscope system 1. For example, the input unit 63 receives an input of an instruction signal for switching the type of illumination light emitted from the light source device 8.
  • the input unit 63 is configured using, for example, a cross switch or a push button.
  • the clock generation unit 64 generates a reference clock signal that serves as a reference for the operation of each component of the endoscope system 1, and outputs this reference clock signal to the synchronization signal generation unit 53.
  • the power supply unit 65 generates the power supply voltage VDD, and supplies the generated power supply voltage VDD to the power supply voltage generation unit 54 of the connector unit 5 together with the ground GND.
  • the processor control unit 66 comprehensively controls each unit constituting the endoscope system 1.
  • the processor control unit 66 is configured using a CPU (Central Processing Unit) or the like.
  • the processor control unit 66 switches the illumination light emitted from the light source device 8 according to the instruction signal input from the input unit 63.
  • FIG. 3 is a top view of the image sensor 20.
  • FIG. 4 is a perspective view of the image sensor 20.
  • 5 is a cross-sectional view taken along line AA in FIG. 6A is a cross-sectional view taken along line BB in FIG. 6B is a cross-sectional view taken along the line CC of FIG. 6C is a cross-sectional view taken along the line DD of FIG. 6D is a cross-sectional view taken along line EE of FIG.
  • the image pickup device 20 has the fourth chip along the direction (vertical direction in FIG. 5) perpendicular to the surface of the pixel unit 211 in the first chip 21. 24, fourth multilayer wiring layer 28, third chip 23, third multilayer wiring layer 27, second chip 22, second multilayer wiring layer 26, first multilayer wiring layer 25, first chip 21 and cover glass 30 (cover Glass wafers) are laminated in this order.
  • the imaging element 20 is formed with TSVs 32 and 34 that electrically connect the layers. Further, the imaging element 20 is provided with a probing pad 213a for contacting an inspection probe for performing an image inspection on the light receiving surface side of the first chip 21. Furthermore, the imaging element 20 is formed with electrodes 31, 33, and 35 that electrically connect the layers.
  • the first chip 21 is provided with a rectangular pixel portion 211 and both left and right ends of the pixel portion 211, and sequentially selects image pickup signals from each pixel 211a in the pixel portion 211 in units of rows.
  • a vertical selection unit 212 vertical selection circuit
  • a connection unit 213 that is arranged on the upper end side of the pixel unit 211 and that connects to the second chip 22, and a connection unit And a probing pad 213a provided on 213.
  • the probing pad 213 a is formed on the first chip 21 so as to overlap with the connection portion 213 when viewed from the light receiving surface side of the pixel portion 211.
  • the second chip 22 selects the column readout unit 221 (column readout circuit), the timing control unit 222, the A / D conversion unit 223, and the column readout unit 221 and transfers the imaging signal.
  • a horizontal selection unit 224 horizontal selection circuit
  • the connection unit 225 is disposed on the upper end side of the column readout unit 221.
  • the third chip 23 includes a transmission unit 231 (cable transmission circuit), a power supply unit 232, and a connection unit 233.
  • the connection unit 233 is disposed on the upper end side of the power supply unit 232.
  • the fourth chip 24 includes a bypass capacitor 241 and a connection portion 242.
  • the connection part 242 is disposed on the upper end side of the bypass capacitor 241.
  • the imaging device 20 configured in this way is arranged on each chip so that each of the connection portion 213, the connection portion 225, the connection portion 233, and the connection portion 242 overlaps when viewed from the direction orthogonal to the light receiving surface of the pixel portion 211. It becomes. Thereby, since the area of each chip can be reduced, the image sensor 20 can be reduced in size.
  • FIG. 7 is a flowchart showing an outline of a method for manufacturing the image sensor 20.
  • 8A to 8N are schematic views showing cross sections of the image sensor 20 in each manufacturing process of FIG.
  • the imaging device 20 is manufactured using a known semiconductor manufacturing apparatus, and thus the description of the configuration of the semiconductor manufacturing apparatus is omitted.
  • a semiconductor manufacturing apparatus forms a semiconductor integrated circuit and a capacitor element on a Si wafer using a known semiconductor integrated circuit process, so that a CIS wafer, an ADC wafer, an IF wafer, and a capacitor wafer are formed. Is manufactured (step S101).
  • the semiconductor manufacturing apparatus forms a multilayer wiring layer including an insulating layer and a conductive layer on each wafer. For example, as shown in FIG. 8A, the semiconductor manufacturing apparatus forms a first multilayer wiring layer 25 on the first chip 21.
  • the semiconductor manufacturing apparatus stacks and connects the CIS wafer and the ADC wafer (step S102). Specifically, as shown in FIG. 8B, the semiconductor manufacturing apparatus planarizes the first multilayer wiring layer 25 of the first chip 21 and the second multilayer wiring layer 26 of the second chip 22, thereby The outermost surface of the first chip and the outermost surface of the conductive layer are made substantially the same height, and then the first multilayer wiring layer 25 of the first chip 21 and the second multilayer of the second chip 22 are formed by the electrode 31 formed of the conductive layer. The wiring layer 26 is bonded. As a result, the insulating layer and the conductive layer are bonded together (hybrid bonding).
  • the semiconductor manufacturing apparatus thins the ADC wafer (step S103). Specifically, as shown in FIG. 8C, the semiconductor manufacturing apparatus thins the second chip 22 from about 3 ⁇ m to 50 ⁇ m from the state of FIG. 8B. In this case, since the first chip 21 functions as a support wafer, it is not necessary to use a separate support wafer for handling when the second chip 22 is thinned.
  • the semiconductor manufacturing apparatus stacks and connects the ADC wafer and the IF wafer (step S104). Specifically, as illustrated in FIG. 8D, the semiconductor manufacturing apparatus joins the insulating film formed on the thinned surface of the second chip 22 and the insulating film of the third multilayer wiring layer 27 of the third chip 23. Laminate by.
  • the semiconductor manufacturing apparatus thins the IF wafer (step S105). Specifically, as shown in FIG. 8E, the semiconductor manufacturing apparatus thins the third chip 23.
  • the semiconductor manufacturing apparatus performs TSV formation on each of the ADC wafer and the IF wafer (step S106). Specifically, as shown in FIG. 8F, the semiconductor manufacturing apparatus forms TSVs 32 for the second chip 22 and the third chip 23, and the second multilayer wiring layer 26 of the second chip 22 and the third chip. 23 third multilayer wiring layers 27 are connected. In this case, the semiconductor manufacturing apparatus connects the second multilayer wiring layer 26 of the second chip 22 and the third multilayer wiring layer 27 of the third chip 23 by, for example, a known twin contact or shared contact.
  • the semiconductor manufacturing apparatus stacks and connects the IF wafer and the capacity wafer (step S107). Specifically, as shown in FIG. 8G, the semiconductor manufacturing apparatus hybrid-bonds or bumps the electrode 33 formed on the back surface of the third chip 23 and connected to the TSV 32 and the fourth multilayer wiring layer 28 of the fourth chip 24. The connection is made by laminating by connecting via the like.
  • the semiconductor manufacturing apparatus thins the capacity wafer (step S108). Specifically, as shown in FIG. 8H, the semiconductor manufacturing apparatus thins the fourth chip 24 to about 3 ⁇ m to 50 ⁇ m.
  • the semiconductor manufacturing apparatus forms a TSV on the capacitive wafer (step S109). Specifically, as shown in FIG. 8I, the semiconductor manufacturing apparatus forms a TSV 34 connected to the fourth multilayer wiring layer 28 of the fourth chip 24.
  • the semiconductor manufacturing apparatus bonds the support wafer to the capacity wafer (step S110), and the semiconductor manufacturing apparatus thins the CIS wafer (step S111). Specifically, as illustrated in FIG. 8J, the semiconductor manufacturing apparatus thins the first chip 21 after temporarily attaching the support wafer 36 to the back surface of the fourth chip 24.
  • the semiconductor manufacturing apparatus opens a probing pad in the CIS wafer (step S112). Specifically, as illustrated in FIG. 8K, the semiconductor manufacturing apparatus exposes the connection portion 213 (connection region) of the first chip 21 so that a part of the first multilayer wiring layer 25 of the first chip 21 is exposed as a pad.
  • the probing pad 213a is formed by etching the Si substrate and the insulating layer in FIG.
  • the semiconductor manufacturing apparatus forms an on-chip filter (OCF) such as a color filter or a micro lens on the CIS wafer (step S113).
  • OCF on-chip filter
  • an inspection apparatus inspects the laminated wafer (step S114). Specifically, the inspection apparatus performs image inspection of the image sensor 20 (laminated wafer) by probing the inspection probe on the probing pad 213a.
  • the semiconductor manufacturing apparatus adheres the cover glass to the CIS wafer (step S115). Specifically, as shown in FIG. 8L, the semiconductor manufacturing apparatus adheres a cover glass 30 (cover glass wafer) onto the OCF of the first chip 21.
  • the semiconductor manufacturing apparatus peels the support wafer (step S116). Specifically, as shown in FIG. 8M, the semiconductor manufacturing apparatus peels off the support wafer 36 on the back surface of the fourth chip 24.
  • the semiconductor manufacturing apparatus forms electrodes on the back surface of the IF wafer (step S117). Specifically, as shown in FIG. 8N, the semiconductor manufacturing apparatus forms an external connection electrode 35 on the back surface of the fourth chip 24. As described above, the semiconductor manufacturing apparatus manufactures the image sensor 20 used in the first embodiment, and ends this process.
  • step S111 the method of thinning the capacitor wafer (step S108) and forming the TSV on the capacitor wafer (step S109) before the thinning of the CIS wafer (step S111) has been described.
  • Thinning of the CIS wafer (step S111) opening of the probing pad to the CIS wafer (step S112), on-chip filter on the CIS wafer (step S108) and TSV formation on the capacity wafer (step S109) OCF) formation (step S113), laminated wafer inspection (step S114), and cover glass adhesion to the CIS wafer (step S115) may be performed.
  • the capacity wafer before the thinning process functions as a support wafer when the CIS wafer is thinned, a process of temporary bonding to the support wafer and a separate process are not required, and the process can be simplified. .
  • FIG. 9 is a timing chart showing the operation of the image sensor 21.
  • the horizontal axis indicates time.
  • 9A shows the readout timing of the horizontal line in the pixel unit 221
  • FIG. 9B shows the AD conversion timing of the second chip 22
  • FIG. 9C shows the third chip 23.
  • the transmission timing by the transmission unit 231 is shown.
  • the N line and the N + 1 line in the pixel portion 211 will be described as an example.
  • the timing control unit 222 starts reading the N line in the pixel unit 211 (time t1), A / D converts the analog imaging signal read from the Odd column, and performs digital imaging.
  • the digital image signal is converted to a signal and transmitted to the transmission cable 3 by the transmission unit 231 (time t2 to time t3).
  • the timing control unit 222 After that, after the horizontal blanking period (time t4), the timing control unit 222 performs A / D conversion on the analog imaging signal read from the Even column to convert it into a digital imaging signal, and this digital imaging signal Is transmitted to the transmission cable 3 by the transmission unit 231 (time t4 to time t5).
  • the timing control unit 222 starts reading the N + 1 line in the pixel unit 211 (time t5).
  • the timing control unit 222 performs A / D conversion on the analog imaging signal read from the Odd column to convert it into a digital imaging signal, and this digital imaging signal Is transmitted to the transmission cable 3 by the transmission unit 231 (time t6 to time t7).
  • the timing control unit 222 performs A / D conversion on the analog imaging signal read from the Even column to convert it into a digital imaging signal, and this digital imaging The signal is transmitted to the transmission cable 3 by the transmission unit 231 (time t8 to time t9).
  • the timing control unit 222 directly transmits the digital imaging signals to the transmission cable 3 in the order of odd columns and even columns for each horizontal line in the pixel unit 211.
  • connection part 213, the connection part 225, and the connection part 242 included in the first chip 21, the second chip 22, and the fourth chip 24 are the pixel part 211. Since it is arranged so as to overlap when viewed from a direction orthogonal to the light receiving surface, further downsizing can be realized.
  • the column readout unit 221, the timing control unit 222, the A / D conversion unit 223, and the horizontal selection unit 224 are arranged on the same second chip 22, thereby Since the timing adjustment circuit for adjusting the variation can be omitted, the image sensor 20 can be further downsized.
  • the pixel unit 211 is disposed on the first chip 21, the A / D conversion unit 223 is disposed on the second chip 22, and the transmission unit 231 is disposed on the third chip 23. Noise from the digital circuit to the pixel portion 211 can be prevented.
  • the probing pad 213a is formed on the first chip 21 so as to overlap with the connection part 213 when viewed from the light receiving surface side of the pixel part 211.
  • the image pickup device 20 can be manufactured while performing image inspection before packaging (before cutting from the wafer or before incorporation into the endoscope 2).
  • a plurality of capacitor chips may be stacked and connected.
  • the imaging element 20a includes a first chip 21, a second chip 22a, a third chip 23a, and a fourth chip 24a, and the chips are stacked. . Further, in the imaging device 20a, a bypass capacitor 241 is formed on the second chip 22a, and a column reading unit 221, a timing control unit 222, an A / D conversion unit 223, and a horizontal selection unit 224 are formed on the third chip 23a. A transmission unit 231 and a power supply unit 232 are formed on the fourth chip 24a.
  • the imaging device 20b includes a first chip 21, a second chip 22b, a third chip 23b, and a fourth chip 24b, and the chips are stacked. ing. Further, in the imaging device 20b, a bypass capacitor 241 is formed on the third chip 23b, and a transmission unit 231 and a power supply unit 232 are formed on the fourth chip 24b.
  • the power supply noise wraps around the pixel unit 211 by stacking the bypass capacitor 241 in the vicinity of the first chip 21 on which the pixel unit 211 is formed. Can be further reduced.
  • the first chip 21 CIS chip
  • the third chip 23a and the second chip 22b ADC chip
  • the fourth chip 24a as the heat source and the fourth chip 24a Since the distance from each of the four chips 24b (IF chips) can be separated, unevenness in the image due to the non-uniformity of the temperature of each pixel 211a can be prevented.
  • a capacitor chip in which a bypass capacitor 241 is disposed between the CIS chip and the ADC chip or between the ADC chip and the IF chip is stacked and connected.
  • capacitive chips may be stacked and connected between the chips.
  • a capacity chip may be provided between the CIS chip and the ADC chip and between the ADC chip and the IF chip.
  • one or more capacitor chips may be stacked and connected to the back surface of the IF chip.
  • FIG. 12 is a block diagram showing functions of main parts of the endoscope system according to Embodiment 2 of the present invention.
  • An endoscope system 1c shown in FIG. 12 includes an endoscope 2c instead of the endoscope 2 of the endoscope system 1 according to Embodiment 1 described above.
  • the endoscope 2c includes an image sensor 20c instead of the image sensor 20 of the endoscope 2 according to the first embodiment described above.
  • the imaging element 20c includes a first chip 21, a second chip 22c, a third chip 23c, and a fourth chip 24c.
  • the second chip 22c includes a column readout unit 221, a first timing control unit 222c (first timing circuit) that generates a drive signal that controls driving of each unit included in the imaging device 20c, an A / D conversion unit 223, and the like. Have.
  • the third chip 23c performs various operations with an odd memory 231a that temporarily records an imaging signal read from the odd column, an even memory 231b that temporarily records an imaging signal read from the even column, and so on. And an arithmetic unit 232c (arithmetic circuit).
  • the fourth chip 24 c includes a transmission unit 231 and a power supply unit 232.
  • FIG. 13A is a plan view schematically showing the first chip 21 forming the imaging element 20c.
  • FIG. 13B is a plan view schematically showing the second chip 22c forming the image sensor 20c.
  • FIG. 13C is a plan view schematically showing the third chip 23c forming the imaging element 20c.
  • FIG. 13D is a plan view schematically showing the fourth chip 24c that forms the imaging device 20c.
  • the second chip 22c includes a column readout unit 221, a first timing control unit 222c, an A / D conversion unit 223, a horizontal selection unit 224, and a connection unit 225.
  • the third chip 23c includes a calculation unit 232c (calculation circuit), a digital memory unit 231c (digital memory circuit) that temporarily records the imaging signal read by the column reading unit 221, and A connection portion 233.
  • the digital memory unit 231c includes the above-described odd memory 231a and even memory 231b.
  • the fourth chip 24 c includes a transmission unit 231, a power supply unit 232, and a connection unit 235.
  • FIG. 14 is a timing chart showing the operation of the image sensor 20c.
  • the horizontal axis indicates time.
  • 14A shows the horizontal line read timing in the pixel unit 211
  • FIG. 14B shows the AD conversion timing of the second chip 22c
  • FIG. 14C shows the read from the Odd column.
  • FIG. 14D shows the writing and reading timings of the output imaging signal to the digital memory unit 231c
  • FIG. 14D shows the writing and reading timings of the imaging signal read from the Even column to the digital memory unit 231c.
  • 14 (e) shows the transmission timing of the transmission unit 231.
  • the N line and the N + 1 line in the pixel portion 211 will be described as an example.
  • the first timing control unit 222c starts reading the N line in the pixel unit 211 (time t11), performs A / D conversion on the analog imaging signal read from the Odd column, and performs digital conversion.
  • the digital imaging signal is written into the digital memory unit 231c (Odd memory 231a) (time t12 to time t13).
  • the first timing control unit 222c reads out the imaging signal of the Odd column written in the digital memory unit 231c (Odd memory 231a) in accordance with the timing of the horizontal blanking period (time t13), and N lines
  • the N-line Odd column transmission for transmitting the imaging signal of the Odd column to the transmission cable 3 by the transmission unit 231 is started (time t13).
  • the first timing control unit 222c performs A / D conversion on the analog imaging signal read from the Even column to convert it into a digital imaging signal,
  • the imaging signal is written into the digital memory unit 231c (Even memory 231b) (time t14 to t15).
  • the first timing control unit 222c starts reading the N + 1 line in the pixel unit 211 (time t15).
  • the first timing control unit 222c reads the imaging signal of the Even column written in the digital memory unit 231c (Even memory 231b) in accordance with the timing of the horizontal blanking period (time t15), and N lines Even N-line Even column transmission for transmitting the imaging signal of the column to the transmission cable 3 by the transmission unit 231 is started (time t15).
  • the first timing control unit 222c performs A / D conversion on the analog imaging signal read from the Odd column and converts the analog imaging signal into a digital imaging signal.
  • the digital memory unit 231c Odd memory 231a
  • the first timing control unit 222c converts the analog imaging signal read from the Even column into a digital imaging signal by performing A / D conversion. Is written in the digital memory unit 231c (Even memory 231b) (time t18 to time t19).
  • the imaging signal of the Even column written in the digital memory unit 231c is read, and the imaging signal of the N + 1 line Even column is transmitted to the transmission cable 3 by the transmission unit 231.
  • the N + 1 line Even column transmission to be transmitted is started (time t19).
  • downsizing can be realized as in the first embodiment.
  • the transmission rate can be reduced by holding the image pickup signal after A / D conversion.
  • the variation of the column circuits constituting the column reading unit 221 can be corrected.
  • the capacitor chip on which the bypass capacitor 241 is formed is connected between the first chip 21 and the second chip 22c, between the second chip 22c and the third chip 23c, and You may laminate
  • one or more capacitor chips may be laminated and connected to the back surface of the fourth chip 24c.
  • the third embodiment is different from the configuration of the endoscope 2 according to the first embodiment described above.
  • the endoscope 2 according to Embodiment 1 described above transmits a parallel signal from the A / D conversion unit 223 to the transmission unit 231, but in the present Embodiment 3, the parallel signal is serially transmitted. It converts into a signal and transmits to a transmission part.
  • the configuration of the endoscope according to the third embodiment will be described.
  • symbol is attached
  • FIG. 15 is a block diagram showing functions of main parts of the endoscope system according to Embodiment 3 of the present invention.
  • An endoscope system 1d shown in FIG. 15 includes an endoscope 2d instead of the endoscope 2 of the endoscope system 1 according to the first embodiment described above.
  • the endoscope 2d includes an imaging element 20d and a connector part 5d instead of the imaging element 20 and the connector part 5 according to the first embodiment described above.
  • the imaging element 20d includes a second chip 22d and a third chip 23d instead of the second chip 22 and the third chip 23 according to the first embodiment.
  • the second chip 22d includes a column reading unit 221, a timing control unit 222, and an A / D conversion unit 223d.
  • the A / D conversion unit 223d converts the analog imaging signal into a digital imaging signal, and converts the parallel imaging signal converted by the conversion unit 226 into a serial imaging signal, thereby converting the third chip.
  • a serializer 227 (Serializer) for transmission to 23d.
  • the serializer 227 converts a parallel imaging signal into a serial imaging signal based on a high-speed clock signal input from a multiplier 237 of the third chip 23d described later, and transmits the serial imaging signal to the third chip 23d.
  • the third chip 23d has a power supply unit 232 and a transmission unit 213d.
  • the transmission unit 213d includes a cable driver 236 and a multiplication unit 237 (multiplication circuit).
  • the cable driver 236 transmits the serial imaging signal input from the serializer 227 to the transmission cable 3 by a differential method (for example, LVDS) based on the high-speed clock signal input from the multiplier 237.
  • a differential method for example, LVDS
  • the multiplier 237 is configured using a PLL (Phase Locked Loop).
  • the multiplier 237 converts the frequency of the reference clock signal input from the connector unit 5d to a predetermined n times (for example, 2 times or 3 times) and outputs the converted signal to the cable driver 236 and the serializer 227. Specifically, the multiplier 237 outputs a high-speed clock signal obtained by multiplying the clock signal based on the number of bits (for example, 8 bits) of the A / D converter 223d.
  • PLL Phase Locked Loop
  • the number of connections of the second chip 22d and the third chip 23d, for example, the TSV 32, can be reduced. Can be reduced.
  • the fourth embodiment is different in configuration from the imaging element 20 according to the first embodiment described above. Specifically, in the imaging device 20 according to the first embodiment described above, a digital imaging signal is transmitted to the transmission cable 3, but in the fourth embodiment, an analog imaging signal is transmitted to the transmission cable 3. To do. The transmitted analog imaging signal is converted into a digital signal in an analog front end unit further provided in the receiving unit 51, and is output to the processor 6 via the imaging signal processing unit 52.
  • the configuration of the image sensor according to the fourth embodiment will be described.
  • symbol is attached
  • FIG. 16A is a plan view of the first chip of the image sensor according to the fourth embodiment.
  • FIG. 16B is a plan view of the second chip of the image sensor according to the fourth embodiment.
  • FIG. 16C is a plan view of the third chip of the image sensor according to the fourth embodiment.
  • the image sensor 20e includes a first chip 21, a second chip 22e, and a third chip 23e.
  • the imaging element 20e is laminated in the order of the third chip 23e, the second chip 22e, the first chip 21, and the cover glass 30 (not shown) along a direction orthogonal to the surface of the pixel unit 211 in the first chip 21. It becomes.
  • the second chip 22e includes a column readout unit 221, a horizontal selection unit 224, a timing control unit 222, and an analog cable transmission unit 228 (which transmits an analog imaging signal read out by the column readout unit 221 to the transmission cable 3. Analog cable transmission circuit). Further, the second chip 22e has a connection portion 225 that electrically connects the layers.
  • the third chip 23e has a bypass capacitor 241 and a connection part 233.
  • FIG. 17 is a top view of the image sensor according to the fifth embodiment.
  • 18 is a cross-sectional view taken along line FF in FIG.
  • FIG. 19A is a plan view of the first chip of the image sensor according to the fifth embodiment.
  • FIG. 19B is a plan view of the second chip of the image sensor according to the fifth embodiment.
  • FIG. 19C is a plan view of the third chip of the image sensor according to the fifth embodiment.
  • the imaging device 20f includes a first chip 21, a second chip 22, and a third chip 23.
  • the imaging element 20f includes a third chip 23, a third multilayer wiring layer 27, a second chip 22, a second multilayer wiring layer 26, and a first multilayer along a direction orthogonal to the surface of the pixel unit 211 in the first chip 21.
  • the wiring layer 25, the first chip 21 and the cover glass 30 are laminated in this order.
  • FIG. 20 is a flowchart showing an outline of a method for manufacturing the image sensor 20f.
  • 21A to 21J are schematic views showing cross sections of the image sensor 20f in each manufacturing step of FIG. In the following, since the imaging element 20f is manufactured using a known semiconductor manufacturing apparatus, the description of the configuration of the semiconductor manufacturing apparatus is omitted.
  • a semiconductor manufacturing apparatus forms a semiconductor integrated circuit on a Si wafer using a known semiconductor manufacturing process, whereby a CIS wafer (first chip 21), an ADC wafer (second chip). 22) and the IF wafer (third chip 23) are manufactured (step S201).
  • the semiconductor manufacturing apparatus forms a multilayer wiring layer including an insulating layer and a conductive layer on each wafer.
  • the semiconductor manufacturing apparatus forms the first multilayer wiring layer 25 on the first chip 21.
  • the semiconductor manufacturing apparatus stacks and connects the CIS wafer and the ADC wafer (step S202). Specifically, as illustrated in FIG. 21B, the semiconductor manufacturing apparatus planarizes the first multilayer wiring layer 25 of the first chip 21 and the second multilayer wiring layer 26 of the second chip 22, so that the insulating layer The outermost surface of the first chip and the outermost surface of the conductive layer are made substantially the same height, and then the first multilayer wiring layer 25 of the first chip 21 and the second multilayer of the second chip 22 are formed by the electrode 31 formed of the conductive layer. The wiring layer 26 is bonded. As a result, the insulating layer and the conductive layer are bonded together (hybrid bonding).
  • the semiconductor manufacturing apparatus thins the ADC wafer (step S203). Specifically, as shown in FIG. 21C, the semiconductor manufacturing apparatus thins the second chip 22 from about 3 ⁇ m to 50 ⁇ m from the state of FIG. 21B. In this case, since the first chip 21 functions as a support wafer, it is not necessary to use a separate support wafer for handling when the second chip 22 is thinned.
  • the semiconductor manufacturing apparatus forms a TSV on the ADC wafer (step S204). Specifically, as illustrated in FIG. 21D, the semiconductor manufacturing apparatus forms a TSV 32 connected to the second multilayer wiring layer 26 with respect to the second chip 22.
  • the semiconductor manufacturing apparatus stacks and connects the ADC wafer and the IF wafer (step S205). Specifically, as shown in FIG. 21E, the third multilayer wiring layer 27 of the third chip 23 and the electrode 33 formed on the back surface of the second chip 22 and connected to the TSV 32 are connected by hybrid bonding or bumps. .
  • the semiconductor manufacturing apparatus thins the CIS wafer (step S206). Specifically, as illustrated in FIG. 21F, the semiconductor manufacturing apparatus thins the first chip 21.
  • the semiconductor manufacturing apparatus opens a probing pad to the CIS wafer (step S207). As shown in FIG. 21G, the semiconductor manufacturing apparatus exposes the Si substrate in the connection portion 213 (connection region) of the first chip 21 so that a part of the first multilayer wiring layer 25 of the first chip 21 is exposed as a PAD.
  • the probing pad 213a is formed by performing an etching process on the insulating layer.
  • the semiconductor manufacturing apparatus forms an on-chip filter (OCF) such as a color filter or a micro lens on the CIS wafer (step S208).
  • OCF on-chip filter
  • an inspection apparatus (not shown) inspects the laminated wafer (step S209). Specifically, the inspection apparatus performs an image inspection of the laminated wafer by probing the inspection probe on the probing pad 213a.
  • the semiconductor manufacturing apparatus adheres a cover glass to the CIS wafer (step S210). Specifically, as illustrated in FIG. 21H, the semiconductor manufacturing apparatus adheres a cover glass 30 to the first chip 21.
  • the semiconductor manufacturing apparatus thins the IF wafer (step S211). Specifically, as shown in FIG. 21I, the semiconductor manufacturing apparatus thins the third chip 23.
  • the semiconductor manufacturing apparatus forms a TSV on the IF wafer (step S212), and forms an electrode on the back surface of the IF wafer (step S213). Specifically, as illustrated in FIG. 21J, the semiconductor manufacturing apparatus forms the TSV 34 on the third chip 23 and then forms the electrode 35 for external connection on the back surface of the third chip 23. As described above, the semiconductor manufacturing apparatus manufactures the image sensor 20f used in the fifth embodiment, and ends this process.
  • the image sensor 20f can be downsized.
  • FIG. 22 is a flowchart showing an outline of a method for manufacturing the image sensor 20f according to the first modification of the fifth embodiment.
  • 23A to 23L are schematic views showing cross sections of the image sensor 20f in each manufacturing process of FIG. In the following, since the imaging element 20f is manufactured using a known semiconductor manufacturing apparatus, the description of the configuration of the semiconductor manufacturing apparatus is omitted.
  • steps S301 to S303 correspond to steps S201 to S203 of FIG.
  • step S304 the semiconductor manufacturing apparatus stacks and connects the ADC wafer and the IF wafer. Specifically, as shown in FIG. 23D, the semiconductor manufacturing apparatus stacks the third multilayer wiring layer 27 of the third chip 23 on the insulating film formed on the thinned surface of the second chip 22 to connect. Do.
  • the semiconductor manufacturing apparatus thins the IF wafer (step S305). Specifically, as illustrated in FIG. 23E, the semiconductor manufacturing apparatus thins the third chip 23.
  • the semiconductor manufacturing apparatus forms TSVs on the ADC wafer and the IF wafer (step S306). Specifically, as shown in FIG. 23F, the semiconductor manufacturing apparatus forms TSVs 32 for the second chip 22 and the third chip 23, respectively, and the second multilayer wiring layer 26 and the third chip of the second chip 22 are formed. 23 third multilayer wiring layers 27 are connected.
  • the semiconductor manufacturing apparatus bonds the support wafer to the IF wafer (step S307). Specifically, as shown in FIG. 23G, the semiconductor manufacturing apparatus temporarily bonds a support wafer 50 to the back surface of the third chip 23.
  • Steps S308 to S312 correspond to steps S206 to S210 of FIG. 20 described above, respectively.
  • step S313 the semiconductor manufacturing apparatus peels the support wafer. Specifically, as illustrated in FIG. 23K, the semiconductor manufacturing apparatus peels the support wafer 50 from the back surface of the third chip 23.
  • the semiconductor manufacturing apparatus forms electrodes on the back surface of the IF wafer (step S314). Specifically, as illustrated in FIG. 23L, the semiconductor manufacturing apparatus forms the electrode 35 on the back surface of the third chip 23. As described above, the semiconductor manufacturing apparatus manufactures the imaging element 20f used in the first modification of the fifth embodiment, and ends this process.
  • step S305 the method of thinning the IF wafer (step S305) and forming the TSV on the IF wafer (step S306) before the thinning of the CIS wafer (step S308) has been described.
  • the CIS wafer is thinned (step S 308).
  • Probing pad opening (step S309), on-chip filter (OCF) formation on the CIS wafer (step S310), laminated wafer inspection (step S311), and cover glass adhesion to the CIS wafer (step S312) may be performed. .
  • the capacity wafer before the thinning process functions as a support wafer when the CIS wafer is thinned, a process of temporary bonding to the support wafer and a separate process are not required, and the process can be simplified. .
  • the image sensor 20f can be downsized as in the first embodiment.
  • the second modification of the fifth embodiment is different in configuration from the imaging element 20f according to the fifth embodiment described above.
  • the probing pad 213a is formed in the connection portion 213 of the first chip 21, but according to the second modification of the fifth embodiment.
  • the imaging element is formed by forming a probing pad as an electrode on the back surface of the third chip 23.
  • a method for manufacturing the image sensor according to the second modification of the fifth embodiment will be described.
  • symbol is attached
  • FIG. 24 is a schematic diagram illustrating a cross section of an image sensor according to Modification 2 of Embodiment 5.
  • the imaging element 20g shown in FIG. 24 is formed by forming a probing pad 60 as an electrode on the back surface of the third chip 23.
  • FIG. 25 is a flowchart showing an outline of a method for manufacturing the image sensor 20g according to the second modification of the fifth embodiment.
  • 26A to 26I are schematic views showing cross sections of the image sensor 20g in each manufacturing process of FIG. In the following, since the imaging element 20g is manufactured using a known semiconductor manufacturing apparatus, the description of the configuration of the semiconductor manufacturing apparatus is omitted.
  • steps S401 to S403 correspond to the above-described steps S201 to S203 of FIG.
  • step S404 the semiconductor manufacturing apparatus stacks and connects the ADC wafer and the IF wafer. Specifically, as shown in FIG. 26D, the third multilayer wiring layer 27 of the third chip 23 and the thinned surface of the second chip 22 are connected by direct bonding or the like via an insulating film.
  • the semiconductor manufacturing apparatus thins the CIS wafer (step S405). Specifically, as illustrated in FIG. 26E, the semiconductor manufacturing apparatus thins the first chip 21.
  • the semiconductor manufacturing apparatus forms an on-chip filter (OCF) such as a color filter or a microlens on the CIS wafer (step S406).
  • OCF on-chip filter
  • the semiconductor manufacturing apparatus adheres the cover glass to the CIS wafer (step S407). Specifically, as illustrated in FIG. 26F, the semiconductor manufacturing apparatus adheres a cover glass 30 (cover glass wafer) to the first chip 21.
  • the semiconductor manufacturing apparatus thins the IF wafer (step S408). Specifically, as shown in FIG. 26G, the semiconductor manufacturing apparatus thins the third chip 23.
  • the semiconductor manufacturing apparatus forms TSVs on the ADC wafer and the IF wafer (step S409). Specifically, as shown in FIG. 26H, the semiconductor manufacturing apparatus forms TSVs 32 for the second chip 22 and the third chip 23, respectively, and the second multilayer wiring layer 26 and the third chip of the second chip 22 are formed. 23 third multilayer wiring layers 27 are connected. Thereby, the back surface wiring connected to the TSV 32 functions as a probing pad.
  • an inspection apparatus (not shown) inspects the laminated wafer (step S410). Specifically, as shown in FIG. 26H, the inspection apparatus inspects the image sensor 20g by bringing an inspection probe into contact with the back surface wiring connected to the TSV 32 as a probing pad.
  • the semiconductor manufacturing control apparatus forms electrodes on the back surface of the IF wafer (step S411). Specifically, as shown in FIG. 26I, the semiconductor manufacturing apparatus forms a probing pad 60 as an electrode at the position where the TSV 32 of the third chip 23 is formed. As described above, the semiconductor manufacturing apparatus manufactures the image sensor 20g used in the second modification of the fifth embodiment, and ends this process.
  • the image sensor 20g can be downsized as in the first embodiment.
  • FIG. 27A is a plan view of the first chip of the imaging element according to Modification 3 of Embodiment 5.
  • FIG. 27B is a plan view of the second chip of the imaging element according to Modification 3 of Embodiment 5.
  • FIG. 27C is a plan view of the third chip of the imaging element according to Modification 3 of Embodiment 5.
  • the imaging device 20h includes a first chip 21, a second chip 22c, and a third chip 23h.
  • the third chip 23h includes a transmission unit 231, a power supply unit 232, a second timing control unit 234 (second timing control circuit) that generates a control signal for driving the vertical selection unit 212, and a connection unit 233c. .
  • the drive signal of the vertical selection unit 212 has a long pulse width with respect to the cycle of the reference clock signal (for example, high or low in units of the horizontal scanning period). Since this is a low-speed signal (switching Low), the second timing control unit 234 is provided in the third chip 23h, so that the circuit of the image pickup device 20h can be provided without further providing a circuit for adjusting timing variations caused by signal transmission between the chips.
  • the sensor size can be optimized.
  • the first timing control unit 222c is provided in the second chip 22c and the second timing control unit 234 is provided in the third chip 23h.
  • the unit 222c may be provided in the third chip 23h, and the second timing control unit 234 may be provided in the second chip 22c.
  • the endoscope is inserted into the subject.
  • the present invention can be applied to, for example, a capsule endoscope or an imaging device that images the subject.
  • section module, unit
  • control unit can be read as control means or a control circuit.
  • the present invention can include various embodiments not described herein, and various design changes can be made within the scope of the technical idea specified by the claims. It is.

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Abstract

L'invention concerne un élément de prise de vues permettant d'obtenir une réduction de taille supplémentaire, un endoscope et un système endoscopique. L'élément de prise de vues (20) est pourvu : d'une première puce (21) ; d'une deuxième puce (22) ; et d'une quatrième puce (24), qui est connectée en étant stratifiée dans la direction orthogonale aux surfaces sur lesquelles la première puce (21) et la deuxième puce (22) sont stratifiées l'une sur l'autre, et qui comporte un condensateur qui fait fonction de condensateur de dérivation (241) pour une alimentation électrique. La première puce (21), la deuxième puce (22) et la quatrième puce (24) comportent respectivement des sections de connexion qui connectent électriquement les puces les unes aux autres, et les sections de connexion sont disposées de manière que les sections de connexion se chevauchent lorsqu'elles sont vues dans la direction orthogonale à la surface de réception de lumière d'une section de pixel (211).
PCT/JP2017/006604 2016-04-25 2017-02-22 Élément de prise de vues, endoscope et système endoscopique WO2017187738A1 (fr)

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DE112017002162.6T DE112017002162T5 (de) 2016-04-25 2017-02-22 Bildgebungselement, endoskop und endoskopsystem
JP2018508251A JP6439076B2 (ja) 2016-04-25 2017-02-22 撮像素子、内視鏡および内視鏡システム
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JP6439076B2 (ja) 2018-12-19
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