WO2017183474A1 - 貫通孔の封止構造及び封止方法、並びに、貫通孔を封止するための転写基板 - Google Patents
貫通孔の封止構造及び封止方法、並びに、貫通孔を封止するための転写基板 Download PDFInfo
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- WO2017183474A1 WO2017183474A1 PCT/JP2017/014413 JP2017014413W WO2017183474A1 WO 2017183474 A1 WO2017183474 A1 WO 2017183474A1 JP 2017014413 W JP2017014413 W JP 2017014413W WO 2017183474 A1 WO2017183474 A1 WO 2017183474A1
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- Prior art keywords
- sealing
- hole
- metal film
- metal
- base
- Prior art date
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4817—Conductive parts for containers, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
Definitions
- the present invention relates to a sealing structure applied to a package member requiring hermetic sealing such as a MEMS device or a semiconductor device. Specifically, the present invention relates to a structure for sealing a sealing space by closing the through hole with respect to a base material provided with a through hole communicating with the sealing space on which the element is mounted.
- MEMS Micro Electro Mechanical Systems
- pressure sensors and acceleration sensors and various semiconductor devices are used in a state of being enclosed in a package in order to prevent oxidation and deterioration of elements due to moisture and oxygen in the air.
- a cap serving as a lid is overlapped on a base to which an element is fixed, and both are joined and hermetically sealed.
- the cap is preliminarily fused with a brazing material, and the internal sealing space can be formed by melting the brazing material again and joining it to the base.
- the degree of vacuum and cleanliness inside the space may change due to the release of gas components contained in a trace amount when the brazing material is melted.
- the degree of vacuum and cleanness of the internal space of the hermetically sealed package are set at a level corresponding to the applied element. Depending on the type of element, there may be a case where even a trace amount of gas component remains in the sealed space.
- a sealing structure for making it possible to adjust the degree of vacuum and cleanliness inside after forming the sealing space there is a cap or base in which a through hole is set in advance.
- a structure is known in which the inside of the sealing space is evacuated to a vacuum and the through hole is filled with a brazing material to seal the through hole (Patent Document 1). ).
- JP 2007-165494 A Japanese Patent No. 5065718
- brazing materials tend to have higher working temperatures, depending on their type.
- a brazing material for package sealing an Au—Sn brazing material having good reliability and corrosion resistance is generally used.
- the melting point of the AuSn brazing material is about 280 ° C., and the sealing operation temperature is often set to 300 ° C. or higher. From the viewpoint of protecting the elements in the package, it is preferable to heat the package at a low temperature.
- the present invention has been made based on the background as described above.
- An object is to provide a sealing structure that can be achieved by the above. Also, a method capable of efficiently sealing a plurality of sealing spaces such as a wafer level package will be clarified.
- the present invention that solves the above-described problems includes a set of base materials that form a sealed space, at least one through hole that is formed in at least one of the set of base materials and communicates with the sealed space, And a sealing member that seals the through hole, on the surface of the base material on which the through hole is formed, in a bulk shape made of at least one of gold, silver, palladium, and platinum Comprising a base metal film made of metal and formed so as to surround at least the periphery of the through-hole, the sealing member sealing the through-hole while bonding to the base metal film,
- the sealing member includes a sealing material composed of a compact of one or more metal powders selected from gold, silver, palladium, and platinum having a purity of 99.9% by mass or more, which is bonded to the base metal film, and the sealing material.
- a lid-like metal film made of a bulk metal composed of at least one of the above, and the sealing material is a densified region on the outer peripheral side in contact with the base metal film, and a porous on the center side in contact with the through-hole
- the densified region is a sealing structure in which the void ratio in an arbitrary cross section is 10% or less in terms of area ratio.
- a compression body of a predetermined metal powder is applied as a sealing member for sealing the through hole.
- this metal powder compressed body uses a metal powder sintered body produced by applying and baking a metal paste composed of a metal powder having a predetermined purity and particle size and a solvent as a precursor. . And pressurization of the metal powder sintered compact which is this precursor WHEREIN: Densification arises and a metal powder compression body is formed.
- the densification mechanism of the sintered compact by pressurization proceeds by the cooperation of physical changes such as plastic deformation and bonding of metal powder and metallographic changes such as recrystallization caused by thermal energy.
- the metal powder compact thus formed can be expected to exhibit high airtightness, suggesting the possibility of using the through hole as a sealing member.
- the present inventors examined a structure that reliably hermetically seals the through-hole while using a metal powder sintered body.
- a metal powder sintered body is introduced after arranging two metal films, a base metal film and a lid-like metal film, on the upper and lower sides of the metal powder sintered body, and the metal powder compressed body from the metal powder sintered body. It has been found that by forming, a sealing member with extremely high airtightness can be obtained.
- a porous body called a metal powder sintered body When a porous body called a metal powder sintered body is compressed while contacting a bulk metal film, not only a compacted compact is formed, but also present at the contact interface with the metal film before compression. The adhesion is improved by crushing the minute gaps. Therefore, the sealing property in the vicinity of the contact interface between the metal powder compact and the substrate is ensured.
- the bulk metal film (lid metal film) in close contact with it has a tight lid that is airtight. To do.
- the present invention has two bulk metal films (underlying metal film and lid-like metal film) above and below the metal powder sintered body, and the metal powder compressed body formed between them is the main component. It is the sealing structure characterized by doing.
- the set of base materials forming the sealed space is to form a plurality of hermetic sealed packages at the same time in addition to an independent package combining a base and a cap constituting the hermetic sealed package.
- the concept includes a combination of substrates in which a plurality of sealing spaces are set. This is because the present invention can be applied to a wafer level package.
- a set of base materials means the combination of two or more base materials.
- the present invention also relates to a sealing structure for closing and sealing a through hole communicating with a sealing space, and is premised on the presence of a through hole formed in a base material. It is sufficient that at least one through hole is set in the sealing space, and the position, size, and shape thereof are not limited. Furthermore, it is not limited to which base material is set for a set of base materials forming the sealed space.
- the sealing structure according to the present invention includes a base metal film provided so as to surround the through-hole, a sealing material made of a compressed body of a predetermined metal powder, and a lid-like metal film bonded to the sealing material. It is comprised by the sealing member which becomes.
- the base metal film is installed in order to secure the adhesion of the sealing material to the base material and to improve the airtightness at the bonding interface with the base material.
- This base metal film is made of at least one of gold, silver, palladium, and platinum. These metals are applied in order to cause the metal powder as the sealing material to thermally diffuse with each other to develop a close contact state.
- the purity of the underlying metal film is preferably high purity, but may not be as high as that of a metal powder compact.
- the base metal film is made of the same material as that of the metal powder constituting the through electrode.
- the base metal film is preferably made of a bulk metal and formed by plating (electrolytic plating, electroless plating), sputtering, vapor deposition, CVD, or the like.
- a bulk body means the state for distinguishing the metal powder compression body of this invention, and the metal powder sintered compact which is the precursor, and is what is called a bulk (lump) metal. It is a metal manufactured by melting / casting, precipitation, or the like, and is intended to be a dense metal that is 0.97 times or more the density of the metal.
- the base metal film only needs to surround at least the periphery of the through hole, and may be in a frame-like or ring-like state along the outer edge of the through-hole.
- the width of the base metal film is preferably equal to or greater than the width of the sealing material to be bonded.
- the base metal film may be formed on the entire surface of the base material.
- the thickness of the base metal film is preferably 0.01 ⁇ m or more and 10 ⁇ m or less. It is the range which shows the minimum thickness for ensuring the adhesiveness to a base material, and the upper limit corresponding to size reduction of a device.
- the base metal film may be formed directly on the surface of the base material, but may be formed through another metal film.
- the other metal film is a metal film for improving the bondability of the base metal film to the base material.
- the other metal film is preferably made of titanium, chromium, tungsten, titanium-tungsten alloy, nickel, platinum, or palladium. These other metal films are also preferably formed by plating, sputtering, vapor deposition, CVD, or the like, and preferably have a thickness of 0.005 ⁇ m to 10 ⁇ m.
- the sealing member bonded to the base metal film described above is composed of a sealing material and a lid-like metal film.
- the sealing material is made of a compressed body of one or more metal powders selected from gold, silver, palladium, and platinum having a purity of 99.9% by mass or more.
- This metal powder compressed body compresses a sintered body formed by sintering at least one metal powder selected from gold, silver, palladium and platinum having an average particle diameter of 0.01 ⁇ m or more and 1.0 ⁇ m or less. What is formed by is preferable.
- the cross-sectional area is naturally larger than the cross-sectional area of the through-hole.
- the area of the cross section of the sealing material is preferably 1.2 to 6 times the area of the cross section of the through hole.
- the thickness of the sealing material is preferably 0.1 ⁇ m or more and 10 ⁇ m or less.
- the cross-sectional area here is an area of the radial direction of a through-hole.
- a lid-like metal film made of a bulk metal made of at least one of gold, silver, palladium, and platinum is bonded to the sealing material. Airtightness above the sealing material is ensured by the lid-like metal film. As described above, the sealing material remains in a porous structure in the central portion communicating with the through hole even after compression.
- the lid-like metal film is a member (lid) for completing the sealing of the through hole by sealing one end of the porous portion.
- the lid-like metal film a metal made of at least one of gold, silver, palladium, and platinum is applied in order to develop a good adhesion state with the metal powder as the sealing material.
- the purity is preferably high purity, but may not be as high as the metal powder compact.
- the preferred purity is 99% by mass or more.
- the lid-like metal film is also preferably made of the same material as the metal powder metal constituting the sealing material, and is made of a bulk metal and formed by plating (electrolytic plating, electroless plating), sputtering, vapor deposition, CVD, or the like. The ones made are preferred.
- the thickness of the lid-like metal film is preferably 0.01 ⁇ m or more and 10 ⁇ m or less.
- the sealing material made of the metal powder compact has different denseness between the outer peripheral region in contact with the base metal film and the central region in contact with the through hole. Yes. That is, the sealing material has a double structure of a cylindrical body having a cross-sectional shape substantially equal to the through hole and a cylindrical body covering the outer peripheral side surface.
- the former is called a porous region and the latter is called a densified region.
- the porous region a relatively large amount of voids contained in the sintered metal powder that is the precursor of the compressed body remain.
- the densified region has a dense structure in which most of the voids have disappeared.
- This difference in denseness occurs because, in the process of forming the sealing material, the densified region on the outer peripheral side is pressurized while being sandwiched between both the base metal film and the lid-like metal film. It is.
- the metal powder in the upper and lower portions in contact with the bulk metal film is pressed from the upper and lower directions and uniformly plastically deformed and recrystallized to increase the denseness.
- the portion located above the through hole is formed by receiving only the pressure from the upper lid-like metal film, so that the voids of the sintered body remain.
- the ratio (void ratio) of the void in the densified region which is one region is defined.
- the sealing action is exhibited.
- a densified region having a porosity of 10% or less in area ratio exhibits a sufficient sealing action.
- the ratio does not necessarily have to be 0% or close to it.
- the allowable porosity from the viewpoint of maintaining the sealing characteristics is 10% at the maximum in area ratio. If it exceeds that, the connection of the gaps cannot be reliably suppressed, and the function as a sealing material is deteriorated.
- the porosity is more preferably 5% or less.
- the lower limit of the porosity is naturally preferably 0%, but the lower limit may be set to 0.1% from the viewpoint of the efficiency of the sealing process and a practical viewpoint.
- the porosity of the porous region is often 20% or more and 30% or less.
- the porosity of the metal powder sintered body as a precursor is 30% or more and 40% or less, it can be said that a certain degree of densification occurs even in this porous region.
- void ratio measurement For the above void ratio measurement, cross-sectional observation is performed for each region, and the void ratio may be appropriately measured based on the structure photograph.
- the cross-sectional observation in this case may be observed from an arbitrary direction at an arbitrary site.
- computer software such as image analysis software may be used.
- a base metal film is formed on a substrate on which a through hole is formed, a sealing member having a two-layer structure (sealing material / lid metal film) is bonded, and the through hole is closed and sealed.
- the stop space is hermetically sealed.
- the sealing material which is a central element of the sealing member is formed by compressing a metal powder sintered body.
- the metal powder sintered compact which is a precursor of sealing material can be formed by sintering the metal paste which disperse
- the sealing metal structure is formed by pressurizing after forming the base metal film in the through hole of the base material, applying and sintering the metal paste, and further forming the lid-like metal film. Can do. However, when a plurality of sealing spaces are formed on a single substrate such as a wafer level package, it cannot be said that it is efficient to form a sealing structure in each through-hole sequentially.
- the present inventors have found a method capable of simultaneously sealing a plurality of through holes by making use of the characteristics of a metal powder sintered body that is a precursor of a sealing material. That is, in the sealing method according to the present invention, the lid-like metal film and the purity are 99.9% by mass or more and the average particle size is 0 at the position corresponding to the position of the through hole of the base material forming the sealing region.
- a substrate which is a member different from the base material to be hermetically sealed is prepared, and a metal powder sintered body serving as a precursor of the sealing material is prepared here. Is formed in advance. And the sealing material formed, compressing a metal powder sintered compact, is transcribe
- the sealing method using this transfer substrate is a process utilizing the fact that when the metal powder sintered body is compressed, a strong bonding force is generated with respect to the base metal film formed on the base material to be sealed. is there.
- the transfer substrate prepared in the sealing method is formed on the substrate, at a position corresponding to the position of the through hole of the base material forming the sealing region, at least on the protrusion, and is formed of gold, silver
- a lid-like metal film made of a bulk metal made of at least one of palladium, platinum, and a lid-like metal film, and having a purity of 99.9% by mass or more and an average particle diameter of 0.01 ⁇ m or more
- a sealing material made of a sintered body obtained by sintering one or more metal powders selected from gold, silver, palladium, and platinum that are 1.0 ⁇ m or less.
- the transfer substrate used in the present invention is provided with a transfer film including an oxide film between the projection of the substrate and the lid-like metal film in addition to the lid-like metal film and the metal powder sintered body. Is also preferable.
- This transfer film is a metal film for adjusting the bonding force between the substrate and the lid-like metal film to be transferred from the base material.
- silicon, glass, ceramics, etc. can be applied as the substrate material of the transfer substrate, but noble metal thin films such as gold, silver, palladium, platinum, etc., which are lid-like metal films, have a weak binding force with the constituent materials of these substrates. Too much. Therefore, when a lid-like metal film is directly formed on the substrate, there is a possibility that it will be easily peeled off.
- a thin film of chromium, titanium, tungsten, and an alloy of these metals having good bondability to both the substrate and the noble metal thin film is formed to suppress peeling of the lid-like metal film.
- metal thin films such as chromium and titanium have too high adhesion to the noble metal thin film, if they are brought into direct contact with each other, the function as a transfer substrate is impaired. This is because the lid-like metal film and the sealing material must be moved (transferred) to the side of the base material having a through hole during the sealing operation. Therefore, in order to adjust the adhesiveness with the lid-like metal film, the transfer film was formed with an oxide film formed on the surface of a metal film such as chromium.
- the transfer substrate described above can be manufactured by forming a protrusion at an arbitrary position on the substrate and sequentially laminating a transfer film, a lid-like metal film, and a metal powder sintered body on the protrusion.
- the substrate of the transfer substrate is a plate material made of silicon, glass, ceramics, or the like.
- substrate has a projection part in the position corresponding to the through-hole position of the base material used as sealing object.
- the protrusion has a cross-sectional area that is 1.2 to 6 times the cross-sectional area of the corresponding through hole. This is because the protrusion is a structural member for transferring the sealing material to the through hole and has substantially the same dimensions as the sealing material. Moreover, it is preferable that the height of the protrusion is 1 ⁇ m or more and 20 ⁇ m or less.
- the protrusions may be formed on the substrate by plating or the like, but the substrate may be etched (dry etching, wet etching) or grinding to make the protrusions integral with the substrate.
- the transfer film is a thin film made of chromium, titanium, tungsten, and alloys of these metals, and can be formed by plating (electrolytic plating, electroless plating), sputtering, vapor deposition, CVD, or the like. Then, after forming a metal film such as chromium, the substrate is once exposed to an oxidizing atmosphere in the air or an oxygen atmosphere to form an oxide film on the surface.
- the oxidation conditions are preferably atmospheric exposure from room temperature to 200 ° C. for about 1 to 24 hours.
- the transfer film preferably has a thickness of 0.001 ⁇ m or more and 0.1 ⁇ m or less. Of these, the thickness of the oxide film is preferably 0.0001 ⁇ m or more and 0.01 ⁇ m or less.
- the lid-like metal film is made of a bulk metal of gold, silver, palladium, or platinum having a purity of 99.9% by mass or more. It is preferably formed by plating (electrolytic plating, electroless plating), sputtering, vapor deposition, CVD method or the like.
- the thickness of the lid-like metal film is preferably 0.01 ⁇ m or more and 10 ⁇ m or less.
- the metal powder sintered body was sintered with one or more metal powders selected from gold, silver, palladium and platinum having a purity of 99.9% by mass or more and an average particle size of 0.01 ⁇ m or more and 1.0 ⁇ m or less. Is.
- This metal powder sintered body is formed by firing a metal paste composed of a metal powder having the above purity and particle size and an organic solvent.
- the ratio of the metal powder to the density of the bulk metal (sintered body / bulk metal) is a porous body of about 0.6 to 0.7.
- the reason why the purity of the metal powder is 99.9% or more is that the plastic deformation and recrystallization of the metal particles are promoted when the sintered body and the compressed body are formed.
- the average particle size of the metal powder is 0.01 ⁇ m or more and 1.0 ⁇ m or less because when the particle size is less than 0.01 ⁇ m, the metal powder tends to aggregate in the metal paste and uniform application becomes difficult. This is because a metal powder having a particle size exceeding 1.0 ⁇ m makes it difficult to form a dense compressed body necessary for hermetic sealing.
- Examples of the organic solvent used in the metal paste include ester alcohol, terpineol, pine oil, butyl carbitol acetate, butyl carbitol, carbitol, and isobornylcyclohexanol (product names include Tersolve MTPH: manufactured by Nippon Terpene Chemical Co., Ltd.) ), 2,4-diethyl-1,5-pentanediol (product name is Nissha MARS: manufactured by Sakai Nippon Kayaku Co., Ltd.), dihydro terpineol (product name is Nisaka MHD: manufactured by Sakai Nippon Kayaku Kagaku Co., Ltd.) Etc.) are preferred.
- the metal paste may contain an additive.
- the additive includes one or more selected from acrylic resins, cellulose resins, and alkyd resins.
- methyl methacrylate polymer can be cited as the acrylic resin
- ethyl cellulose can be cited as the cellulose resin
- phthalic anhydride resin can be cited as the alkyd resin.
- These additives have an action of suppressing aggregation of the metal powder in the metal paste, and make the metal paste homogeneous.
- the amount of the additive added is preferably 2% by mass or less with respect to the metal paste.
- the metal powder content can be within a range sufficient for filling the through holes while maintaining a stable aggregation suppressing effect.
- blend a metal powder as 80 to 99 mass% and an organic solvent as 1 to 20 mass%.
- the metal powder sintered body is formed by applying a metal paste to the substrate on which the lid-like metal film is formed and baking it.
- the coating thickness of the metal paste is preferably 1 ⁇ m or more and 20 ⁇ m or less in consideration of subsequent sintering and densification by pressing, although it depends on the blending ratio of the metal powder.
- the heating temperature for generating the metal powder sintered body is preferably 150 ° C. or more and 300 ° C. or less. If the temperature is lower than 150 ° C., the metal powder cannot be sufficiently sintered. If the temperature exceeds 300 ° C., the sintering proceeds excessively and becomes too hard due to the progress of necking between the metal powders.
- an inert gas nitrogen, argon, helium
- an inert gas mixed with 1% or more and 5% or less of hydrogen, or the like is selected.
- the firing time is preferably from 30 minutes to 8 hours.
- the sintered metal powder sintered body is a porous body having a density of 0.6 to 0.7 times that of the bulk metal. Then, a transfer substrate for forming and transferring the lid-like metal film and the sealing material is obtained by the steps described above.
- the release film, the lid-like metal film, and the metal powder sintered body may be formed on at least the protrusions of the substrate. This is because the sealing material or the like to be transferred should be at least on the protrusion.
- a metal powder sintered body or the like may be formed on the substrate surface around the protrusion. As will be described later, the range in which the metal powder sintered body becomes dense and becomes a compact is limited to the tip end region of the protrusion between the lid-like metal film and the base metal film. There is no problem even if there is a powder compact.
- a sealing space is appropriately formed for the base material to be sealed.
- the substrate may be a single package including a base and a cap, or a combination of wafers having a plurality of sealing spaces.
- the sealing space is formed by combining the base materials, and the inside thereof is evacuated.
- examples of the bonding method of the base material for forming the sealed space include, but are not limited to, brazing, anodic bonding, glass fusion, and metal paste bonding.
- the degree of vacuum and cleanliness are not limited at all. The degree of vacuum in the sealed space depends on the performance and required accuracy of the internal elements.
- the base metal film is made of a bulk metal made of at least one of gold, silver, palladium, and platinum.
- the base metal film is preferably formed by plating (electrolytic plating, electroless plating), sputtering, vapor deposition, CVD, or the like.
- the thickness of the base metal film is preferably 0.01 ⁇ m or more and 10 ⁇ m or less.
- the base metal film may be formed entirely on the substrate having through holes, or may be formed in a frame shape or a ring shape only on the periphery of the through holes by performing appropriate masking.
- the base metal film may be formed before forming the sealing space on the base material.
- the above-mentioned transfer substrate is pressed against the base material on which the sealed space and the base metal film have been formed, and the pressure is applied to the base metal film on the base material from the metal powder compact.
- the sealing material and the lid-like metal are joined and transferred to form the sealing structure of the present invention.
- the metal powder sintered body sandwiched between the base metal film and the lid-like metal film is compressed and densified in close contact with the two bulk metal films.
- the metal powder sintered body is densified and strongly bonded to the underlying metal film.
- the pressure condition of the transfer substrate is preferably 80 MPa or more and 200 MPa or less.
- the pressurization for transferring the sealing material is performed by heating at least one of the transfer substrate and the base material. This is because the recrystallization of the metal powder is promoted and a dense sealing material is rapidly formed.
- the heating temperature is preferably 80 ° C. or higher and 300 ° C. or lower. Sealing at a relatively low temperature of 300 ° C. or lower is possible in addition to applying a sealing material that can be densified at low temperatures, such as a metal powder sintered body, as well as a base metal film and a lid-like metal film This is because the bulk metal film was appropriately disposed.
- the transfer substrate After transferring the sealing material, the transfer substrate is removed to form the sealing structure according to the present invention, and the hermetic sealing of the sealing space is completed.
- the gas component organic solvent
- the sealing space is not contaminated during the transfer of the sealing material. The degree of vacuum immediately before sealing can be maintained.
- the used transfer substrate may have metal powder remaining on the substrate. This used transfer substrate can be reused by appropriately cleaning it and again forming a lid-like metal film or the like.
- the sealing structure according to the present invention can seal the through hole at a relatively low temperature without contaminating the sealing space.
- the transfer substrate according to the present invention can efficiently form this sealing structure, and can cope with an object in which a plurality of sealing spaces are set on one base material such as a wafer level package.
- the figure explaining the manufacturing process of the transfer substrate in 1st Embodiment The figure explaining the formation process of the base material (sealing space) in 1st Embodiment.
- the figure explaining the sealing process of the sealing space using the transfer substrate in 1st Embodiment The SEM photograph which shows the cross-sectional structure
- First Embodiment A preferred embodiment of the present invention will be described below.
- a metal powder made of gold having a purity of 99.9% is used as a sealing material, and after a transfer substrate is manufactured and a base material is processed, a test for sealing a through hole of the base material is performed. went.
- FIG. 1 is a diagram for explaining a production process of a transfer substrate in this embodiment.
- a substrate made of a silicon wafer was prepared, and protrusions corresponding to the diameter and position (pitch) of the through holes of the base material to be sealed were formed by dry etching (FIG. 1A).
- the dimensions of the protrusions are cylindrical protrusions having a diameter of 500 ⁇ m and a height of 10 ⁇ m.
- a titanium thin film was formed by sputtering as a transfer film on the top surface of the protruding portion of the substrate (film thickness 0.05 ⁇ m). Next, this was exposed in the atmosphere at 25 ° C. for 24 hours to form an oxide film (thickness: about 0.005 ⁇ m) (FIG. 1B). After forming a transfer film made of titanium and its oxide film, gold was formed as a lid-like metal film by sputtering (film thickness 0.5 ⁇ m, FIG. 1C). The titanium thin film (transfer film) and the gold thin film (lid metal film) were formed on the entire surface of the substrate so that each thin film was reliably formed on the top surface of the protrusion.
- a metal paste was applied to form a metal powder sintered body on the substrate.
- the metal paste was prepared by mixing gold powder (average particle size 0.3 ⁇ m, purity 99.9%) produced by a wet reduction method with an organic solvent isobornylcyclohexanol (Telsolve MTPH). Used (gold powder mixing ratio 80 mass%).
- the metal paste was applied by a printing method by covering the substrate with a metal mask opened so as to surround the protrusions (FIG. 1D). After applying the metal paste, the substrate was heated at 200 ° C. for 2 hours to sinter the metal powder, thereby forming a metal powder sintered body having a thickness of 5 ⁇ m on the top surface of the protrusion, thereby completing the transfer substrate. (FIG. 1 (e)).
- the base material to be sealed in this embodiment is a silicon wafer (upper base material) and a glass wafer (lower base material), and a pair of two forms a sealed space.
- the thickness of each substrate is 0.5 mm.
- a plurality of (72) cavities serving as sealing spaces are formed in the silicon wafer, and through holes communicating with the cavities are formed.
- the glass wafer is a flat plate material.
- the size of the cavity of the silicon wafer is 2 mm square, and the through hole is a hole having a circular cross section with a diameter of 0.1 ⁇ m.
- the sealing space was formed by positioning the silicon wafer and the glass wafer and then bonding them together by anodic bonding as a conventional technique (FIG. 2B).
- a bond aligner (BA8, manufactured by SUSS Microtech) was used, and for anodic bonding, a wafer bonder (SB8e, manufactured by SUSS Microtech) was used.
- the bonding conditions were 400 ° C., ⁇ 800 V, 30 minutes in a vacuum atmosphere (10 Pa), and light pressing.
- gold was deposited as a base metal film around the through hole of the silicon wafer (FIG. 2 (c)).
- a base metal film is formed on the entire surface of the wafer, a titanium / platinum film is formed to ensure adhesion, and then gold is sputtered.
- the gold film thickness is 0.5 ⁇ m.
- the transfer substrate After the transfer substrate reached 200 ° C., it was held for 30 minutes with a load applied (FIG. 3B). Thereafter, the transfer substrate was moved by unloading. When the base material after removing the transfer substrate was observed, it was confirmed that the sealing member and the lid-like metal film of the transfer substrate were joined to the through hole (FIG. 3C). The sealing material was compressed and deformed, and the thickness was 2 ⁇ m.
- FIG. 4 is a cross-sectional photograph of the densified region that is the outer peripheral portion of the metal powder compact that is the sealing material and the porous region that is the central portion of the sealing structure formed in the present embodiment.
- This photograph is a photograph in which the created sealing structure was cross-section processed and polished with a focused ion beam apparatus (FIB), and observed with an SEM (30000 times, inclined 45 °).
- FIG. 4 clearly shows the difference in the degree of densification between the densified region and the porous region. In the porous region, a plurality of voids are continuously connected. On the other hand, although there are minute voids in the densified region, they are in an independent state. Since there is no gap connection, it is expected that the hermetic sealing action is sufficient.
- FIB focused ion beam apparatus
- the porosity was measured for each of the densified region and the porous region.
- the porosity measurement was performed by processing the SEM image of FIG. 4 with image analysis software (trade name “A image kun (ver. 2.50)” manufactured by Asahi Kasei Engineering Corp.).
- image analysis the image was binarized to separate the voids and the metal particles, and the area ratio of the void portion was calculated to obtain the void ratio.
- the porosity of the densified region of this embodiment was 2.0%, and the porosity of the porous region was 22.5%.
- Second Embodiment Here, for the same base material (sealing space) as in the first embodiment, the effects of the difference in the constituent materials of the sealing material and the presence or absence of the base metal film and the lid-like metal film were examined.
- the transfer substrate was prepared by changing the particle size and type of the metal powder in the same manner as the solvent and metal content of the metal paste.
- a silicon wafer (upper base material) and a glass wafer (lower base material) were joined to form a sealing space, and the through hole was sealed.
- the pressure on the top surface of the protrusion was set to 70 MPa and a low load. Table 1 shows the configurations of various sealing structures prototyped in this embodiment and the results of leak tests.
- the present invention applies a predetermined metal powder compact as a medium for sealing a through hole in a sealing method for a sealing space provided with a through hole.
- the sealing structure according to the present invention can be appropriately formed in the form of a transfer substrate, and the sealing structure can be formed efficiently, so that a plurality of sealing spaces are formed on one base material such as a wafer level package. It can correspond to the target to be set.
- the present invention is effective for hermetic sealing of MEMS devices such as pressure sensors and acceleration sensors and various semiconductor devices.
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Abstract
Description
図1は、本実施形態における転写基板の製造工程を説明する図である。まず、シリコンウエハ製の基板を用意し、封止する基材の貫通孔の径及び位置(ピッチ)に合わせた突起部をドライエッチングにより形成した(図1(a))。突起部の寸法は、直径500μm、高さ10μmの円柱状の突起である。
本実施形態で封止処理を行う基材は、シリコンウエハ(上部基材)とガラスウエハ(下部基材)であって、2枚一組で封止空間を形成する(図2(a))。基材の厚さは、いずれも0.5mmである。シリコンウエハに封止空間となるキャビティが複数(72個)形成されており、このキャビティに連通する貫通孔が形成されている。一方、ガラスウエハは、平坦な板材である。シリコンウエハのキャビティの寸法は2mm角であり、貫通孔は直径0.1μmの断面円形の孔である。
(i)で製造した転写基板を用いて、基材の封止空間の貫通孔を封止した。転写基板と基材の位置あわせには、ボンドアライナー(BA8,ズースマイクロテック社製)を用いて、図3(a)のように、転写基板の突起部が貫通孔に対応するように位置決めした。その後、ウエハボンダー(SB8e,ズースマイクロテック社製)を用いて、真空雰囲気(10Pa)に減圧後、転写基板を基材に押し当てて加圧、転写基板と基材をヒーター付治具で加熱した。このときの転写条件は、突起部頂面の圧力が100MPa、加熱条件は、昇温速度30℃/minで200℃まで加熱した。
Claims (10)
- 封止空間を形成する一組の基材と、前記一組の基材の少なくとも一つに形成され前記封止空間と連通する少なくとも一つの貫通孔と、前記貫通孔を封止する封止部材と、を含む封止構造であって、
前記貫通孔が形成される前記基材の表面上に、金、銀、パラジウム、白金の少なくともいずれかよりなるバルク状金属からなり、少なくとも前記貫通孔の周辺部を包囲するように形成された下地金属膜を備え、
前記封止部材は、前記下地金属膜に接合しつつ前記貫通孔を封止しており、
前記封止部材は、前記下地金属膜に接合される、純度99.9質量%以上の金、銀、パラジウム、白金から選択される一種以上の金属粉末の圧縮体からなる封止材料と、
前記封止材料に接合される、金、銀、パラジウム、白金の少なくともいずれかよりなるバルク状金属からなる蓋状金属膜と、からなり、
前記封止材料は、前記下地金属膜と接する外周側の緻密化領域と、前記貫通孔に接する中心側の多孔質領域からなり、
前記緻密化領域は、任意断面における空隙率が面積率で10%以下である、封止構造。 - 下地金属膜の厚さが、0.01μm以上10μm以下である請求項1記載の封止構造。
- 蓋状金属膜の厚さが、0.01μm以上10μm以下である請求項1又は請求項2記載の封止構造。
- 封止材料の横断面の断面積が、貫通孔の横断面の断面積の1.2倍以上6倍以下である請求項1~請求項3のいずれかに記載の封止構造。
- 封止材料の厚さが、0.1μm以上10μm以下である請求項1~請求項4のいずれかに記載の封止構造。
- 封止材料は、純度が99.9質量%以上であり、平均粒径が0.01μm以上1.0μm以下である金、銀、パラジウム、白金から選択される一種以上の金属粉末の焼結体を圧縮することで形成されたものである請求項1~請求項5のいずれかに記載の封止構造。
- 請求項1~請求項6のいずれかに記載の封止構造を形成する封止方法であって、
封止領域を形成する基材の貫通孔の位置に対応する位置に、蓋状金属膜と純度が99.9質量%以上であり平均粒径が0.01μm以上1.0μm以下である金、銀、パラジウム、白金から選択される一種以上の金属粉末が焼結してなる金属粉末焼結体とを備える転写基板を用意する工程と、
貫通孔が形成された前記基材の表面に、少なくとも貫通孔の周辺部を包囲するように下地金属膜を形成する工程と、
前記金属粉末焼結体が前記下地金属膜に接しつつ、前記貫通孔を封止するように、前記転写基板と前記基材とを対向させて重ねる工程と、
前記転写用基板を押圧し、前記封金属粉末焼結体から封止材料を形成すると共に前記下地金属に接合させる工程と、を含む封止方法。 - 転写基板及び基材の少なくともいずれかを80℃以上300℃以下で加熱しながら押圧する請求項7記載の封止方法。
- 請求項7又は請求項8に記載の封止方法で使用される転写基板であって、
基板と、
前記基板上の基材の貫通孔の位置に対応する位置に形成され突起部と、
少なくとも前記突起部の上に形成され、金、銀、パラジウム、白金の少なくともいずれかよりなるバルク状金属からなる蓋状金属膜と、
前記蓋状金属膜の上に形成され、純度が99.9質量%以上であり平均粒径が0.01μm以上1.0μm以下である金、銀、パラジウム、白金から選択される一種以上の金属粉末が焼結してなる金属粉末焼結体と、を備える転写基板。 - 更に、突起部と蓋状金属膜との間に形成され、クロム、チタン、タングステン、及びこれらの金属の合金からなり、前記蓋状金属膜側の表面に酸化皮膜が形成されている転写膜を備える請求項9記載の転写基板。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007165494A (ja) | 2005-12-13 | 2007-06-28 | Dainippon Printing Co Ltd | センサーパッケージおよびその製造方法 |
JP2008028364A (ja) * | 2006-06-20 | 2008-02-07 | Tanaka Kikinzoku Kogyo Kk | 封止用の金属ペースト及び圧電素子の気密封止方法並びに圧電デバイス |
JP2009278562A (ja) * | 2008-05-16 | 2009-11-26 | Epson Toyocom Corp | 圧電デバイス及びその封止方法 |
JP2015095572A (ja) * | 2013-11-13 | 2015-05-18 | 田中貴金属工業株式会社 | 貫通電極を用いた多層基板の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1053293C (zh) * | 1997-02-05 | 2000-06-07 | 华通电脑股份有限公司 | 球阵式集成电路封装方法及封装件 |
US6528875B1 (en) * | 2001-04-20 | 2003-03-04 | Amkor Technology, Inc. | Vacuum sealed package for semiconductor chip |
US7597933B2 (en) * | 2003-08-21 | 2009-10-06 | Shuhou Co., Ltd. | Method of preparing printed or daubed image and printed or daubed image element by it |
EP2124254B1 (en) | 2007-03-22 | 2018-08-01 | Tanaka Kikinzoku Kogyo Kabushiki Kaisha | Method for hermetical sealing of piezoelectric element |
JP5119866B2 (ja) * | 2007-03-22 | 2013-01-16 | セイコーエプソン株式会社 | 水晶デバイス及びその封止方法 |
JP4665959B2 (ja) * | 2007-11-30 | 2011-04-06 | 日本電気株式会社 | 真空パッケージ |
JP2009182924A (ja) | 2008-02-01 | 2009-08-13 | Epson Toyocom Corp | 圧電デバイス及び圧電デバイスの製造方法 |
JP2014013795A (ja) * | 2012-07-03 | 2014-01-23 | Seiko Epson Corp | ベース基板、電子デバイスおよび電子機器 |
JP6136349B2 (ja) * | 2013-02-22 | 2017-05-31 | セイコーエプソン株式会社 | 電子デバイス、電子機器及び移動体 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007165494A (ja) | 2005-12-13 | 2007-06-28 | Dainippon Printing Co Ltd | センサーパッケージおよびその製造方法 |
JP2008028364A (ja) * | 2006-06-20 | 2008-02-07 | Tanaka Kikinzoku Kogyo Kk | 封止用の金属ペースト及び圧電素子の気密封止方法並びに圧電デバイス |
JP5065718B2 (ja) | 2006-06-20 | 2012-11-07 | 田中貴金属工業株式会社 | 圧電素子の気密封止方法、及び、圧電デバイスの製造方法 |
JP2009278562A (ja) * | 2008-05-16 | 2009-11-26 | Epson Toyocom Corp | 圧電デバイス及びその封止方法 |
JP2015095572A (ja) * | 2013-11-13 | 2015-05-18 | 田中貴金属工業株式会社 | 貫通電極を用いた多層基板の製造方法 |
Non-Patent Citations (1)
Title |
---|
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