WO2017181478A1 - 蚀刻设备及蚀刻方法 - Google Patents

蚀刻设备及蚀刻方法 Download PDF

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Publication number
WO2017181478A1
WO2017181478A1 PCT/CN2016/083293 CN2016083293W WO2017181478A1 WO 2017181478 A1 WO2017181478 A1 WO 2017181478A1 CN 2016083293 W CN2016083293 W CN 2016083293W WO 2017181478 A1 WO2017181478 A1 WO 2017181478A1
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Prior art keywords
etching
transport
bin
tank
compartment
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English (en)
French (fr)
Inventor
叶江波
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/102,868 priority Critical patent/US20180094354A1/en
Publication of WO2017181478A1 publication Critical patent/WO2017181478A1/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45212—Etching, engraving, sculpturing, carving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular, to an etching apparatus for patterning an array substrate.
  • LTPS Low Temperature Poly-silicon array substrate process of low temperature polysilicon technology
  • LTPS Low Temperature Poly-silicon array substrate process of low temperature polysilicon technology
  • the dry etching equipment is obviously superior to the wet etching equipment in terms of on-line width control, so it plays an important role in the LTPS process.
  • the film thickness difference between the two is often large, and it is impossible to control the etching according to the actual line width requirement.
  • the gate is pure Mo metal, and the common electrode or the pixel electrode is mainly AL metal, the etching rate of MO is significantly higher than the etching rate of AL at the same temperature, so the same device cannot be used for processing, thus increasing the working hours and equipment. , resulting in increased costs.
  • the present application provides an etching apparatus for an etching process of an array substrate, comprising: a control unit, a conveying portion, a feeding portion, a conveying belt, a net silo disposed at intervals, a first etching groove, a second etching groove, and a a third etching groove, the conveying portion is located on a side of the cleaning bin away from the first etching groove, the feeding portion is located outside the drying chamber, and the conveying belt is connected between the conveying portion and the feeding portion, Etching equipment also includes The fourth transport bin, the first transport bin, the second transport bin and the third transport bin, the first transport bin is located at one side of the first etching slot and can communicate with the first etching slot, the second transport The second storage tank is located on a side of the second etching tank, and the third transportation tank is located on a side of the third etching tank, and the fourth transportation tank is located in the third etching tank. On the side of the bin, the fourth transport bin, the
  • a switchable barrier door is provided between the three etching tanks and the washing tank and between the washing tank and the drying chamber.
  • cleaning devices are arranged on both sides of the barrier door of the net silo.
  • the fourth transport bin, the first transport bin, the second transport bin and the third transport bin are located in a row, the net silo, the first etching trough, the second etching trough, the third etching trough, the washing tank and
  • the drying chambers are located in a row and are parallel to the columns of the fourth, first, second and third shipping bays.
  • the feeding portion comprises a chamber and a lifting mechanism disposed in the chamber, wherein the lifting mechanism is configured to move the array substrate to be etched and place it in the net silo.
  • the fourth transport warehouse, the first transport warehouse, the second transport warehouse and the third transport warehouse each include a warehouse and a transport belt disposed in the warehouse.
  • the conveying direction between the first transport bin and the first etching groove is perpendicular to the conveying direction of the transport belt of the first transport bin, and the conveying device between the fourth transport bin and the net silo is connected
  • the conveying direction belt is perpendicular to the conveying direction of the conveyor belt of the fourth transport bin.
  • the etching device includes a water washing tank and a drying chamber, and the water washing tank and the drying chamber are sequentially disposed on a side of the third etching groove away from the second etching groove.
  • the present application provides an array substrate etching method, the method comprising:
  • the control unit is provided with a plurality of preset etching paths, wherein the preset etching path includes a path from the net silo to the fourth transport bin, the first transport bin, and then into the second etching slot and the third etching slot;
  • the conveying portion transports the array substrate to be etched to the transport belt, and is transported by the transport belt to the feeding portion;
  • the feeding portion puts the array substrate to be etched into the net silo
  • the control unit selects to open a corresponding preset path according to the etching amount of the metal layer etched by the array substrate to be etched, and etches the array substrate to be etched;
  • the etched array substrate is washed into a water washing tank and then dried.
  • the etching apparatus of the present application mainly selects etching by using one or more etching grooves according to different etching rates, and then the same etching can be used whether it is necessary to use one etching groove or a processing array substrate using a plurality of etching grooves.
  • FIG. 1 is a schematic view of an etching apparatus according to an embodiment of the present invention.
  • FIG. 2 is a flow chart of an etching method in accordance with an embodiment of the present invention.
  • a preferred embodiment of the present invention provides an etching apparatus for etching an LTPS (Low Temperature Poly-silicon) array substrate.
  • the gate and the common electrode of the array substrate are taken as an example for description.
  • the gate is pure Mo metal
  • the common electrode is AL metal.
  • the materials and line widths of the two metal layers on the same substrate are different, which makes it impossible to use during etching.
  • Processing with an etch rate etch device requires at least two etch equipment replacements or manual etch etch etch on an etch device, which adds manpower time, while the etch equipment described herein includes control Unit (not shown), conveying unit 10, feeding unit 15, conveyor belt 20, net silo 31 arranged at intervals, first etching tank 32, second etching tank 33, third etching tank 34, washing tank 35 And drying chamber 36.
  • the conveying portion 10 is located on a side of the cleaning bin 31 away from the first etching groove 32, the feeding portion 15 is located outside the drying bin 36, and the conveying belt 20 is connected to the conveying portion 10 and the feeding portion 15 between.
  • the etching apparatus further includes a fourth transport compartment 41, a first transport compartment 42, a second transport compartment 43, and a third transport compartment 44, the first transport compartment 42 being located on one side of the first etching tank 32 and being connectable
  • the first etching tank 32 is located on the side of the second etching tank 33 and can communicate with the second etching tank 33.
  • the third transportation chamber 44 is located on the side of the third etching tank 34.
  • the third etch tank 34 is connected, and the fourth transport bin 41 is located at the side of the net silo 31, and the fourth transport silo 41, the first transport silo 42, the second transport silo 43, and the third transport silo 44 Can be connected.
  • the water washing tank 35 and the drying chamber 36 are sequentially disposed on a side of the third etching tank 34 away from the second etching tank 33.
  • the conveying portion 10 and the feeding portion 15 are both lifting devices, and the feeding portion 15 includes a chamber and a lifting mechanism disposed in the chamber, wherein the lifting mechanism is configured to move the array substrate to be etched and Placed in the net silo 31.
  • the conveyor belt 20 is connected between the conveying portion 10 and the feeding portion 15, and an ultraviolet cleaning device is disposed above the conveyor belt 20 for removing the organic matter remaining on the surface of the array substrate during transportation due to the previous step.
  • a switchable barrier door (not shown) is disposed between the etching grooves 34, the third etching groove 42 and the water washing tank 35, and the water washing tank 35 and the drying chamber 36.
  • the partition door is used for taking time.
  • the cleaning device 31 is provided with cleaning devices on both sides of the barrier door, such as an air gun, which is mainly used to prevent the first etching groove 32 when the array substrate enters when the barrier door of the cleaning bin 31 is opened.
  • the acid gas in the etching bath 32 corrodes the feeding portion 15 of the array substrate.
  • the fourth transport bin 41, the first transport bin 42, the second transport bin 43, and the third transport bin 44 each include a bin and a transport belt 45 disposed in the bin.
  • the fourth transport compartment 41, the first transport compartment 42, the second transport compartment 43, and the third transport compartment 44 are located in a row, the net silo 31, the first etching tank 32.
  • the second etching groove 33, the third etching groove 34, the washing tank 35 and the drying chamber 36 are located in a row and are connected to the fourth transportation compartment 41, the first transportation compartment 42, the second transportation compartment 43, and the third transportation compartment 44.
  • the columns are parallel.
  • the third transport bin 44 and the third etching trench 34 A transfer device is disposed between the fourth transport bin 41 and the net bin 31, and a transfer device between the first transport bin 42 and the first etching slot 32 is used to place the first transport bin 42
  • the array substrate is fed into the first etching groove 32 through the barrier door.
  • the functions of the conveyors in other transport compartments are the same as those of the conveyors described above, which may be conveyor belts or conveyor rollers.
  • the conveying direction between the first transport bin 42 and the first etching groove 32 is perpendicular to the conveying direction of the transport belt of the first transport bin 32, and between the fourth transport bin 41 and the net silo 31
  • the conveying means communicates with the conveying direction of the conveying belt perpendicular to the conveying belt of the fourth transport compartment 41.
  • the conveying direction between the second transport compartment 43 and the second etching tank 33, between the third transport compartment 44 and the third etching tank 34 is perpendicular to the conveying direction of the corresponding conveyor belt.
  • the transport belts of the fourth transport bin 41, the first transport bin 42, the second transport bin 43, and the third transport bin 44 constitute a straight transport direction, and the first transport bin 42 and the first etching Between the grooves 32, between the second transport compartment 43 and the second etching tank 33, between the third transport compartment 44 and the third etching tank 34, and between the fourth transport compartment 41 and the net silo 31
  • the conveying directions of the conveyors are both perpendicular to the straight conveying direction of the conveyor belt.
  • the etching path can be selected, and the control unit sets a preset etching path, that is, when the array substrate enters the etching path, and the corresponding barrier door is opened.
  • the preset etching path includes the paths from the second silo 31 to the fourth transport silo 41, the first transport silo 42, and then into the second etching trough 33 and the third etching trough 34.
  • the paths from the net silos 31 to the fourth transport silos 41, the first transport silos 42 and the second transport silos 43 are then entered into the third etching tank 34.
  • the net silo 31 directly enters the path of the first etching bath 32, the second etching bath 33, and the third etching bath 34.
  • the etched array substrate is etched using the etching apparatus, and the specific steps are as follows.
  • step S1 the control unit sets a plurality of preset etching paths.
  • Step S2 the transport unit 10 transports the array substrate to be etched to the transport belt 20, and the transport The belt 20 is transported to the feeding portion 15.
  • Step S3 the feeding portion 15 puts the array substrate to be etched into the net silo 31;
  • Step S4 according to the etching amount of the metal layer etched by the array substrate to be etched, the control unit selects to open the corresponding preset path to etch the array substrate to be etched; taking the gate as an example, the gate is pure Mo metal etch rate is faster. Therefore, in this embodiment, the paths from the net silos 31 to the fourth transport silos 41, the first transport silos 42 and the second transport silos 43 are selected and then enter the third etching tank 34.
  • the array substrate to be etched is placed in the net silo, enters the fourth transport bin 41 through the conveying device, enters the first transport bin 42 in the direction of 90 in the fourth transport bin 41, and then travels straight into the second transport bin 43 after Rotating in the 90 direction enters the third etching bath 34.
  • the etching of the array substrate to be etched is performed only through the etching of the third etching trench 34.
  • step S5 the etched array substrate is washed into the washing tank 35, and then dried. It is not necessary to manually take out the etched array substrate and then wash and dry it, which greatly shortens the process time.
  • the etching apparatus of the present application mainly selects etching by using one or more etching grooves according to different etching rates, and then the same etching can be used whether it is necessary to use one etching groove or a processing array substrate using a plurality of etching grooves.

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Abstract

一种蚀刻设备，用于阵列基板的蚀刻工艺，其中包括控制单元、输送部(10)、进料部(15)、运送带(20)、依次间隔设置的净料仓(31)、第一蚀刻槽(32)、第二蚀刻槽(33)和第三蚀刻槽(34)，进料部(15)位于净料仓(31)远离第一蚀刻槽(32)的一侧，输送部(10)位于干燥仓(36)外侧，运送带(20)连接于输送部(10)与进料部(15)之间，蚀刻设备还包括第四运输仓(41)、第一运输仓(42)、第二运输仓(43)及第三运输仓(44)，第一运输仓(42)位于第一蚀刻槽(32)的一侧并可以连通第一蚀刻槽(32)，第二运输仓(43)位于第二蚀刻槽(33)一侧可以连通第二蚀刻槽(33)，第三运输仓(44)位于第三蚀刻槽(34)一侧可以连通第三蚀刻槽(34)，第四运输仓 (41)位于净料仓(31)一侧，第四运输仓(41)、第一运输仓(42)、第二运输仓(43)及第三运输仓(44)之间可以连通。以及一种阵列基板蚀刻方法。

Description

蚀刻设备及蚀刻方法
本发明要求2016年4月18日递交的发明名称为“蚀刻设备及蚀刻方法”的申请号201610238916.X的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及液晶显示技术领域，特别涉及一种阵列基板图案化的蚀刻装置。
背景技术
低温多晶硅技术LTPS(Low Temperature Poly-silicon)阵列基板工艺因光罩数量较多，设备投入成本较传统的薄膜晶体管基板要多；其中限于产品的精细化以及高解析度限制，在蚀刻工艺中多数采用干蚀刻设备进行达成；干蚀刻设备在线宽控制方面明显优于湿蚀刻设备，因此在LTPS工艺中有着举足轻重的地位。实际在使用过程中，若LTPS阵列基板中的栅极及公共电极或者像素电极需要共用一台湿法设备，而往往因为二者之间膜厚差异较大，无法控制根据实际线宽要求控制蚀刻程度；同时因栅极为纯Mo金属，而公共电极或者像素电极主要为AL金属，MO的蚀刻速率在同一温度下明显高于AL的蚀刻速率，因此无法使用同一设备进行加工，因此增加工时及设备，造成成本提高。
发明内容
本发明的目的在于提供一种蚀刻设备，可以同时蚀刻LTPS阵列基板中不同蚀刻速率的金属层。
本申请提供一种蚀刻设备，用于阵列基板的蚀刻工艺，其包括控制单元、输送部、进料部、运送带、依次间隔设置的净料仓、第一蚀刻槽、第二蚀刻槽、第三蚀刻槽，所述输送部位于所述净料仓远离第一蚀刻槽的一侧，所述进料部位于干燥仓外侧，所述运送带连接于输送部与进料部之间，所述蚀刻设备还包 括第四运输仓、第一运输仓、第二运输仓及第三运输仓，所述第一运输仓位于第一蚀刻槽的一侧并可以连通所述第一蚀刻槽，所述第二运输仓位于第二蚀刻槽一侧可以连通所述第二蚀刻槽，所述第三运输仓位于所述第三蚀刻槽一侧可以连通所述第三蚀刻槽，所述第四运输仓位于净料仓一侧，所述第四运输仓、第一运输仓、第二运输仓及第三运输仓之间可以连通。
其中，所述净料仓与所述第一蚀刻槽之间、所述第一蚀刻槽与所述第二蚀刻槽之间、所述第二蚀刻槽与所述第三蚀刻槽之间、第三蚀刻槽与水洗槽及水洗槽与干燥仓之间均设有可开关的隔挡门。
其中，所述净料仓的隔挡门两侧设有清洁装置。
其中，所述第四运输仓、第一运输仓、第二运输仓及第三运输仓位于一列，所述净料仓、第一蚀刻槽、第二蚀刻槽、第三蚀刻槽、水洗槽及干燥仓位于一列并与所述第四、第一、第二及第三运输仓所在列平行。
其中，所述第一运输仓与第一蚀刻槽之间、所述第二运输仓与第二蚀刻槽之间、所述第三运输仓与第三蚀刻槽之间以及所述第四运输仓与净料仓之间均设置有传送装置。
其中，所述进料部包括腔室及设于腔室内的升降机构，所述升降机构用于运动待蚀刻阵列基板并将其放置于所述净料仓。
其中，第四运输仓、第一运输仓、第二运输仓及第三运输仓均包括仓室及设于仓室内的运输带。
其中，所述第一运输仓与第一蚀刻槽之间的传送装置传送方向带垂直于第一运输仓的运输带的运送方向，所述第四运输仓与净料仓之间的传送装置连通传送方向带垂直于所述第四运输仓的运输带的运送方向。
其中，所述蚀刻设备包括水洗槽及干燥仓，所述水洗槽及干燥仓依次设于所述第三蚀刻槽远离第二蚀刻槽的一侧。
本申请提供一种阵列基板蚀刻方法，所述方法包括：
控制单元设有多个预设蚀刻路径，其中，预设设蚀刻路径包括净料仓至第四运输仓、第一运输仓后，再进入第二蚀刻槽及第三蚀刻槽的路径；
净料仓至第四运输仓、第一运输仓及第二运输仓后再进入第三蚀刻槽的路径；
以及，净料仓直接进入第一蚀刻槽、第二蚀刻槽及第三蚀刻槽的路径；
所述输送部运送待蚀刻阵列基板至所述运送带，由所述运送带运送至进料部；
所述进料部将待蚀刻阵列基板放入所述净料仓；
根据待蚀刻阵列基板蚀刻的金属层的蚀刻量，控制单元选择开启对应的预设路径，对所述待蚀刻阵列基板进行蚀刻；
蚀刻后的阵列基板进入水洗槽进行清洗后进行干燥。
本申请的蚀刻设备主要是根据蚀刻速率不同选择使用一个或者多个蚀刻槽进行蚀刻，那么，不管是需要使用一个蚀刻槽还是需要使用多个蚀刻槽的代加工阵列基板，都可以使用同一台蚀刻设备，并且不需要人工操作蚀刻，节省工时及加工成本。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例的蚀刻设备示意图。
图2是本发明实施例的蚀刻方法流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，本发明佳实施方式提供一种蚀刻设备，用于LTPS(Low Temperature Poly-silicon)阵列基板的蚀刻工艺，本实施例中，以阵列基板的栅极及公共电极为例进行说明。栅极为纯Mo金属，而公共电极为AL金属，同一个基板上的两个金属层的材料及线宽等数据不同，导致在蚀刻时不能使用 同蚀刻速率的蚀刻设备进行加工，那么就需要至少两台蚀刻设备更换使用，或者在一台蚀刻设备上人工选择蚀刻槽蚀刻，这些都增加了人力时间，而本申请所述的蚀刻设备包括控制单元(图未示)、输送部10、进料部15、运送带20、依次间隔设置的净料仓31、第一蚀刻槽32、第二蚀刻槽33、第三蚀刻槽34、水洗槽35及干燥仓36。所述输送部10位于所述净料仓31远离第一蚀刻槽32的一侧，所述进料部15位于干燥仓36外侧，所述运送带20连接于输送部10与进料15部之间。所述蚀刻设备还包括第四运输仓41、第一运输仓42、第二运输仓43及第三运输仓44，所述第一运输仓42位于第一蚀刻槽32的一侧并可以连通所述第一蚀刻槽32，所述第二运输仓43位于第二蚀刻槽33一侧可以连通所述第二蚀刻槽33，所述第三运输仓44位于所述第三蚀刻槽34一侧可以连通所述第三蚀刻槽34，所述第四运输仓41位于净料仓31一侧，所述第四运输仓41、第一运输仓42、第二运输仓43及第三运输仓44之间可以连通。所述水洗槽35及干燥仓36依次设于所述第三蚀刻槽34远离第二蚀刻槽33的一侧。
本实施例中，输送部10与进料部15均为升降装置，所述进料部15包括腔室及设于腔室内的升降机构，所述升降机构用于运动待蚀刻阵列基板并将其放置于所述净料仓31。所述运送带20连接于输送部10与进料部15之间，并且位于运送带20上方还设有紫外线净化装置，用于去除运送中的阵列基板表面上因为上一工序残留的有机物。
进一步的，所述净料仓31与所述第一蚀刻槽32之间、所述第一蚀刻槽32与所述第二蚀刻槽33之间、所述第二蚀刻槽33与所述第三蚀刻槽34之间、第三蚀刻槽42与水洗槽35及水洗槽35与干燥仓36之间均设有可开关的隔挡门(图未示)，所述隔挡门用于带时刻的阵列基板的进出。更进一步的所述净料仓31隔挡门两侧设有清洁装置，如气枪，主要用于在净料仓31隔挡门开启时，阵列基板进入时第一蚀刻槽32时，防止第一蚀刻槽32内的酸气腐蚀运送所述阵列基板的进料部15。
本实施例中，第四运输仓41、第一运输仓42、第二运输仓43及第三运输仓44均包括仓室及设于仓室内的运输带45。所述第四运输仓41、第一运输仓42、第二运输仓43及第三运输仓44位于一列，所述净料仓31、第一蚀刻槽 32、第二蚀刻槽33、第三蚀刻槽34、水洗槽35及干燥仓36位于一列并与所述第四运输仓41、第一运输仓42、第二运输仓43及第三运输仓44所在列平行。
本实施例中，所述第一运输仓42与第一蚀刻槽32之间、所述第二运输仓43与第二蚀刻槽33之间、所述第三运输仓44与第三蚀刻槽34之间以及所述第四运输仓41与净料仓31之间均设置有传送装置，所述第一运输仓42与第一蚀刻槽32之间的传送装置用于将第一运输仓42内的阵列基板穿过隔挡门送入第一蚀刻槽32内。同理，其它运输仓内的传送装置作用均是与上述传送装置作用相同，所述传送装置可以是传送带或者传送滚轮。
所述第一运输仓42与第一蚀刻槽32之间的传送装置传送方向带垂直于第一运输仓32的运输带的运送方向，所述第四运输仓41与净料仓31之间的传送装置连通传送方向带垂直于所述第四运输仓41的运输带的运送方向。同理，所述第二运输仓43与第二蚀刻槽33之间、所述第三运输仓44与第三蚀刻槽34之间的传送装置传送方向带垂直于相应的运输带的运送方向，可以理解为，所述第四运输仓41、第一运输仓42、第二运输仓43及第三运输仓44的运输带构成一个直线运送方向，而所述第一运输仓42与第一蚀刻槽32之间、所述第二运输仓43与第二蚀刻槽33之间、所述第三运输仓44与第三蚀刻槽34之间以及所述第四运输仓41与净料仓31之间的传送装置运送方向均垂直于所述运输带构成的直线运送方向。
根据待蚀刻的阵列基板的设计，可以选择蚀刻路径，控制单元设置预设蚀刻路径，即当阵列基板进入蚀刻路径，并且相应的隔挡门开启。预设蚀刻路径包括净料仓31至第四运输仓41、第一运输仓42后，再进入第二蚀刻槽33及第三蚀刻槽34的路径。净料仓31至第四运输仓41、第一运输仓42及第二运输仓43后再进入第三蚀刻槽34的路径。以及，净料仓31直接进入第一蚀刻槽32、第二蚀刻槽33及第三蚀刻槽34的路径。
请参阅图2，使用所述蚀刻设备蚀刻代加工的阵列基板，具体步骤如下，
步骤S1，控制单元设置多个预设蚀刻路。
步骤S2，所述输送部10运送待蚀刻阵列基板至所述运送带20，由所述运送 带20运送至进料部15。
步骤S3，所述进料部15将待蚀刻阵列基板放入所述净料仓31；
步骤S4，根据待蚀刻阵列基板蚀刻的金属层的蚀刻量，控制单元选择开启对应的预设路径，对所述待蚀刻阵列基板进行蚀刻；以栅极为例，栅极为纯Mo金属蚀刻速率比较快，所以本实施例选择净料仓31至第四运输仓41、第一运输仓42及第二运输仓43后再进入第三蚀刻槽34的路径。待蚀刻阵列基板放入所述净料仓，通过传送装置进入第四运输仓41，在第四运输仓41内转90方向进入第一运输仓42，然后直线行驶进入第二运输仓43后在旋转90方向进入第三蚀刻槽34，如此，待蚀刻阵列基板只经过第三蚀刻槽34的蚀刻即可完成蚀刻加工。
步骤S5，蚀刻后的阵列基板进入水洗槽35进行清洗后进行干燥。无需人工取出蚀刻后的阵列基板再去水洗及干燥，大大缩短此工序时间。
本申请的蚀刻设备主要是根据蚀刻速率不同选择使用一个或者多个蚀刻槽进行蚀刻，那么，不管是需要使用一个蚀刻槽还是需要使用多个蚀刻槽的代加工阵列基板，都可以使用同一台蚀刻设备，并且不需要人工操作蚀刻，节省工时及加工成本。
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (10)

  1. 一种蚀刻设备，用于阵列基板的蚀刻工艺，其中，包括控制单元、输送部、进料部、运送带、依次间隔设置的净料仓、第一蚀刻槽、第二蚀刻槽、第三蚀刻槽，所述输送部位于所述净料仓远离第一蚀刻槽的一侧，所述进料部位于干燥仓外侧，所述运送带连接于输送部与进料部之间，所述蚀刻设备还包括第四运输仓、第一运输仓、第二运输仓及第三运输仓，所述第一运输仓位于第一蚀刻槽的一侧并可以连通所述第一蚀刻槽，所述第二运输仓位于第二蚀刻槽一侧可以连通所述第二蚀刻槽，所述第三运输仓位于所述第三蚀刻槽一侧可以连通所述第三蚀刻槽，所述第四运输仓位于净料仓一侧，所述第四运输仓、第一运输仓、第二运输仓及第三运输仓之间可以连通。
  2. 如权利要求1所述的蚀刻设备，其中，所述净料仓与所述第一蚀刻槽之间、所述第一蚀刻槽与所述第二蚀刻槽之间、所述第二蚀刻槽与所述第三蚀刻槽之间、第三蚀刻槽与水洗槽及水洗槽与干燥仓之间均设有可开关的隔挡门。
  3. 如权利要求2所述的蚀刻设备，其中，所述净料仓的隔挡门两侧设有清洁装置。
  4. 如权利要求2所述的蚀刻设备，其中，所述第四运输仓、第一运输仓、第二运输仓及第三运输仓位于一列，所述净料仓、第一蚀刻槽、第二蚀刻槽、第三蚀刻槽、水洗槽及干燥仓位于一列并与所述第四、第一、第二及第三运输仓所在列平行。
  5. 如权利要求2所述的蚀刻设备，其中，所述第一运输仓与第一蚀刻槽之间、所述第二运输仓与第二蚀刻槽之间、所述第三运输仓与第三蚀刻槽之间以及所述第四运输仓与净料仓之间均设置有传送装置。
  6. 如权利要求1所述的蚀刻设备，其中，所述进料部包括腔室及设于腔室内的升降机构，所述升降机构用于运动待蚀刻阵列基板并将其放置于所述净料仓。
  7. 如权利要求5所述的蚀刻设备，其中，第四运输仓、第一运输仓、第二运输仓及第三运输仓均包括仓室及设于仓室内的运输带。
  8. 如权利要求7所述的蚀刻设备，其中，所述第一运输仓与第一蚀刻槽之间的传送装置传送方向带垂直于第一运输仓的运输带的运送方向，所述第四运输仓与净料仓之间的传送装置连通传送方向带垂直于所述第四运输仓的运输带的运送方向。
  9. 如权利要求1所述的蚀刻设备，其中，所述蚀刻设备包括水洗槽及干燥仓，所述水洗槽及干燥仓依次设于所述第三蚀刻槽远离第二蚀刻槽的一侧。
  10. 一种阵列基板蚀刻方法，其中，所述方法包括：
    控制单元设置多个预设蚀刻路径，其中，预设设蚀刻路径包括净料仓至第四运输仓、第一运输仓后，再进入第二蚀刻槽及第三蚀刻槽的路径；
    净料仓至第四运输仓、第一运输仓及第二运输仓后再进入第三蚀刻槽的路径；
    以及，净料仓直接进入第一蚀刻槽、第二蚀刻槽及第三蚀刻槽的路径；
    所述输送部运送待蚀刻阵列基板至所述运送带，由所述运送带运送至进料部；
    所述进料部将待蚀刻阵列基板放入所述净料仓；
    根据待蚀刻阵列基板蚀刻的金属层的蚀刻量，控制单元选择开启对应的预设路径，对所述待蚀刻阵列基板进行蚀刻；
    蚀刻后的阵列基板进入水洗槽进行清洗后进行干燥。
PCT/CN2016/083293 2016-04-18 2016-05-25 蚀刻设备及蚀刻方法 Ceased WO2017181478A1 (zh)

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