WO2017175481A1 - 三次元集積積層回路製造用シートおよび三次元集積積層回路の製造方法 - Google Patents

三次元集積積層回路製造用シートおよび三次元集積積層回路の製造方法 Download PDF

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WO2017175481A1
WO2017175481A1 PCT/JP2017/005142 JP2017005142W WO2017175481A1 WO 2017175481 A1 WO2017175481 A1 WO 2017175481A1 JP 2017005142 W JP2017005142 W JP 2017005142W WO 2017175481 A1 WO2017175481 A1 WO 2017175481A1
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Prior art keywords
adhesive layer
sheet
dimensional integrated
manufacturing
laminated circuit
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PCT/JP2017/005142
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English (en)
French (fr)
Japanese (ja)
Inventor
裕介 根津
貴志 杉野
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リンテック株式会社
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Priority to KR1020187021490A priority Critical patent/KR102625368B1/ko
Priority to JP2017528977A priority patent/JP6174293B1/ja
Priority to CN201780004484.9A priority patent/CN108463527B/zh
Publication of WO2017175481A1 publication Critical patent/WO2017175481A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

Definitions

  • the present invention relates to a sheet suitable for manufacturing a three-dimensional integrated multilayer circuit, and a method for manufacturing a three-dimensional integrated multilayer circuit using the sheet.
  • laminated circuit In recent years, development of a three-dimensional integrated stacked circuit (hereinafter sometimes referred to as “laminated circuit”) in which a plurality of semiconductor chips are three-dimensionally stacked is progressing from the viewpoint of increasing the capacity and functionality of electronic circuits.
  • a semiconductor chip having a through electrode (TSV) penetrating from the circuit formation surface to the opposite surface is used for miniaturization and high functionality.
  • the stacked semiconductor chips are electrically connected to each other through contact between through electrodes (or bumps provided at end portions of the through electrodes) provided in the respective semiconductor chips.
  • Patent Document 1 proposes a method in which semiconductor chips are bonded to each other by interposing a film-like adhesive generally called NCF (Non-Conductive Film) between the semiconductor chips.
  • NCF Non-Conductive Film
  • the laminated circuit described above since a plurality of semiconductor chips are laminated, it is very easy to generate heat when a current is passed through the electric circuit. Heat generation of the laminated circuit causes a reduction in arithmetic processing capability and malfunction, and causes a reduction in performance of the laminated circuit. Further, when the laminated circuit generates excessive heat, the laminated circuit may be deformed, resulting in damage or failure. For this reason, the laminated circuit described above is required to have high heat dissipation in order to ensure reliability.
  • the present invention has been made in view of such a situation, and an object of the present invention is to provide a sheet for manufacturing a three-dimensional integrated circuit that can manufacture a three-dimensional integrated circuit having excellent heat dissipation. . Another object of the present invention is to provide a method for manufacturing such a three-dimensional integrated laminated circuit.
  • the present invention is interposed between a plurality of semiconductor chips having through electrodes, and is used to bond the plurality of semiconductor chips to each other to form a three-dimensional integrated stacked circuit.
  • a sheet for manufacturing a three-dimensional integrated multilayer circuit wherein the sheet for manufacturing a three-dimensional integrated multilayer circuit includes at least a curable adhesive layer, and the adhesive layer includes a heat conductive filler, and the adhesive
  • a standard deviation of layer thickness (T2) is 2.0 ⁇ m or less, and a sheet for producing a three-dimensional integrated laminated circuit is provided (Invention 1).
  • the adhesive layer includes a thermally conductive filler having high thermal conductivity, and the standard deviation of the thickness (T2) of the adhesive layer is within the above range. Therefore, the laminated circuit manufactured using the sheet has excellent heat dissipation. Therefore, a highly reliable multilayer circuit can be manufactured by using the sheet for manufacturing a three-dimensional integrated multilayer circuit according to the invention (Invention 1).
  • the thermally conductive filler is preferably made of a material selected from metal oxide, silicon carbide, carbide, nitride, and metal hydroxide (Invention 2).
  • the content of the thermally conductive filler in the adhesive layer is preferably 35% by mass or more and 95% by mass or less (Invention 3).
  • the thermal conductive filler preferably has a thermal conductivity at 23 of 10 W / m ⁇ K or more (Invention 4).
  • the heat conductive filler preferably has an average particle size of 0.01 ⁇ m or more and 20 ⁇ m or less (Invention 5).
  • the thermal conductivity of the adhesive layer after curing is 0.5 W / m ⁇ K or more and 8.0 W / m ⁇ K or less (Invention 6).
  • the material constituting the adhesive layer preferably contains a thermosetting component, a high molecular weight component and a curing catalyst (Invention 7).
  • the glass transition temperature of the high molecular weight component is preferably 50 ° C. or higher (Invention 8).
  • the material constituting the adhesive layer preferably contains a flux component (Invention 9).
  • the thickness of the adhesive layer is preferably 2 ⁇ m or more and 500 ⁇ m or less (Invention 10).
  • the sheet for manufacturing a three-dimensional integrated laminated circuit is opposite to the adhesive layer laminated on one side of the adhesive layer and the adhesive layer in the adhesive layer. It is preferable to further include a base material laminated on the surface side (Invention 11).
  • the thickness of the substrate is preferably 10 ⁇ m or more and 500 ⁇ m or less (Invention 12).
  • ratio (T2 / T1) of the thickness (T2) of the said adhesive bond layer with respect to the thickness (T1) of the said base material is 0.01 or more and 5.0 or less.
  • the storage elastic modulus at 23 ° C. of the pressure-sensitive adhesive layer is preferably 1 ⁇ 10 3 Pa or more and 1 ⁇ 10 9 Pa or less (Invention 14).
  • the base material preferably has a tensile elastic modulus at 23 ° C. of 100 MPa or more and 5000 MPa or less (Invention 15).
  • the present invention relates to one side of the adhesive layer of the sheet for manufacturing a three-dimensional integrated circuit (Invention 1 to 10) or the adhesive layer of the sheet for manufacturing a three-dimensional integrated circuit (Invention 11 to 15). Bonding the surface opposite to the pressure-sensitive adhesive layer and at least one surface of a semiconductor wafer provided with through electrodes, and bonding the semiconductor wafer to the adhesive layer of the sheet for producing a three-dimensional integrated multilayer circuit And dicing together into a semiconductor chip with an adhesive layer, and dividing the plurality of semiconductor chips with an adhesive layer into electrical connection between the through electrodes and the adhesive layer and the semiconductor chip A step of obtaining a semiconductor chip laminate by laminating a plurality of semiconductor chips so as to be alternately arranged, and curing the adhesive layer in the semiconductor chip laminate, To provide a method of manufacturing a three-dimensional integrated multilayer circuit, characterized in that it comprises a step of bonding the semiconductor chips to formed (invention 16).
  • a three-dimensional integrated circuit having excellent heat dissipation can be manufactured.
  • a three-dimensional integrated laminated circuit can be manufactured.
  • FIG. 1 shows a cross-sectional view of a sheet 1 for manufacturing a three-dimensional integrated laminated circuit according to the first embodiment.
  • a sheet 1 for manufacturing a three-dimensional integrated laminated circuit according to the present embodiment (hereinafter sometimes referred to as “manufacturing sheet 1”) includes an adhesive layer 13 and at least the adhesive layer 13. And a release sheet 14 laminated on one surface. Note that the release sheet 14 may be omitted.
  • FIG. 2 is a cross-sectional view of the sheet 2 for manufacturing a three-dimensional integrated multilayer circuit according to the second embodiment.
  • the sheet 2 for manufacturing a three-dimensional integrated laminated circuit according to the present embodiment includes a base material 11 and at least one surface of the base material 11.
  • stacked on the surface side on the opposite side to the base material 11 in the adhesive layer 12 are provided.
  • a release sheet 14 may be laminated on the surface of the adhesive layer 13 opposite to the pressure-sensitive adhesive layer 12.
  • the adhesive layer 13 includes a thermally conductive filler having a high thermal conductivity. Moreover, in the sheet
  • a laminated circuit is formed by laminating a plurality of semiconductor chips, it has a structure that includes a large number of circuits serving as a heat source and hardly dissipates heat. Therefore, when a current is passed through the laminated circuit, the laminated circuit easily generates heat, and the generated heat is difficult to escape to the outside.
  • the semiconductor chip is provided by the adhesive layer 13 that includes the heat conductive filler and has excellent heat dissipation. Since they are bonded together, heat is easily released from the end of the adhesive layer 13.
  • the standard deviation of the thickness (T2) of the adhesive layer 13 is in the above range, the thickness of the adhesive layer 13 constituting the laminated circuit becomes uniform, and the thickness of the laminated circuit itself becomes uniform. As a result, the heat conduction in the laminated circuit is excellent.
  • the entire laminated circuit is excellent in heat dissipation, and an excessively high temperature is suppressed even when a current is passed. As a result, a highly reliable laminated circuit can be manufactured.
  • the standard deviation of the thickness (T2) of the adhesive layer 13 is in the above range, so that the desired thickness of the adhesive layer 13 Deviation from the thickness of the laminated circuit is suppressed, whereby the laminated circuit can be manufactured to a uniform thickness.
  • the standard deviation of the thickness (T2) of the adhesive layer 13 is within the above range, generation of voids when embedding the through electrodes or bumps of the semiconductor wafer in the adhesive layer 13 is suppressed, and satisfactory embedding is achieved. This also makes it possible to manufacture a laminated circuit with a uniform thickness.
  • the three-dimensional integrated multilayer circuit manufacturing sheets 1 and 2 according to the present embodiment are interposed between a plurality of semiconductor chips having through electrodes, and are bonded to each other to form a three-dimensional integrated multilayer circuit. It is used for this purpose.
  • One or both ends of the through electrode may protrude from the surface of the semiconductor chip.
  • the semiconductor chip may further include a bump, and in this case, the bump may be provided at one end or both ends of the through electrode.
  • the adhesive layer 13 has curability.
  • having the curability means that the adhesive layer 13 can be cured by heating or the like. That is, the adhesive layer 13 is uncured in the state where the manufacturing sheets 1 and 2 are configured.
  • the adhesive layer 13 may be thermosetting or energy ray curable.
  • the adhesive layer 13 is preferably thermosetting from the viewpoint that curing can be satisfactorily performed when the production sheets 1 and 2 are used in a method for producing a laminated circuit. Specifically, when the manufacturing sheets 1 and 2 are used in a method for manufacturing a laminated circuit, the adhesive layer 13 is separated into pieces in a state of being attached to a semiconductor wafer, as will be described later.
  • the laminated body of the semiconductor chip and the adhesive layer 13 separated into pieces is obtained.
  • the adhesive layer 13 side surface is stuck on the laminated body of the semiconductor chips, and the adhesive layer 13 is cured in this state.
  • a semiconductor chip often does not have a permeability to energy rays or has a very low permeability. Even in such a case, the adhesive layer 13 has a thermosetting property. In this case, the adhesive layer 13 can be quickly cured.
  • Adhesive Layer (1) Material
  • the material constituting the adhesive layer 13 contains a heat conductive filler. Further, the material preferably further contains a thermosetting component, a curing agent, a curing catalyst, a high molecular weight component, a component having a flux function, and the like.
  • Thermally conductive filler The material constituting the adhesive layer 13 contains a thermally conductive filler.
  • the thermally conductive filler refers to a filler having a high thermal conductivity, for example, a filler having a thermal conductivity of 10 W / m ⁇ K or higher at 25 ° C., preferably a filler having a thermal conductivity of 20 W / m ⁇ K or higher. And particularly preferably a filler of 30 W / m ⁇ K or more.
  • the upper limit of the heat conductivity in 25 degreeC of a heat conductive filler is not limited, Usually, it is 300 W / m * K or less.
  • the adhesive layer 13 exhibits excellent heat dissipation due to the interaction between the adhesive layer 13 containing the thermally conductive filler and the laminated circuit having a uniform thickness.
  • the adhesive layer 13 contains the thermally conductive filler, in the obtained laminated circuit, the rigidity becomes high and the dimensional change according to the environmental change hardly occurs.
  • thermally conductive filler examples include metal oxides such as zinc oxide, magnesium oxide, alumina, titanium oxide, and iron oxide, carbides such as silicon carbide and calcium carbonate, nitrides such as boron nitride and aluminum nitride, magnesium hydroxide, and the like. It is preferable to use a filler made of a material selected from metal hydroxides and talc. Among these, metal oxides such as zinc oxide, magnesium oxide, alumina, titanium oxide, and iron oxide, carbides such as silicon carbide and calcium carbonate, boron nitride, aluminum nitride, etc.
  • a filler made of a material selected from a metal hydroxide such as a nitride and magnesium hydroxide.
  • the powder may be used as a filler, a sphere-shaped bead may be used as a filler, or the single crystal fiber may be used as a filler.
  • the heat conductive filler obtained from the said material can be used individually by 1 type or in combination of 2 or more types. Moreover, it is preferable that a heat conductive filler does not have electroconductivity.
  • the shape of the heat conductive filler is not particularly limited, and for example, it may have at least one shape selected from a granular shape, a needle shape, a plate shape, and an indeterminate shape. Among these, it is preferable to use a granular heat conductive filler. Since the heat conductive filler is granular, the filling rate of the heat conductive filler in the adhesive layer 13 is improved, and an efficient heat conduction path is formed in the adhesive layer 13. As a result, the adhesive layer 13 is It has better heat dissipation.
  • the average particle diameter thereof is preferably 0.01 ⁇ m or more as a lower limit, more preferably 0.05 ⁇ m or more, and particularly preferably 0.1 ⁇ m or more. .
  • the average particle diameter of the heat conductive filler is preferably 20 ⁇ m or less, more preferably 5 ⁇ m or less, and particularly preferably 1 ⁇ m or less.
  • the average particle diameter of the heat conductive filler in this specification is the particle diameter calculated as an arithmetic average value by measuring the major axis diameter of 20 heat conductive fillers randomly selected with an electron microscope. Say.
  • the maximum particle size of the thermally conductive filler is preferably 50 ⁇ m or less, and more preferably 25 ⁇ m or less.
  • the maximum particle size of the thermally conductive filler is 50 ⁇ m or less, it becomes easy to fill the adhesive layer 13 with the thermally conductive filler, and as a result, the adhesive layer 13 has better heat dissipation.
  • the maximum particle size of the inorganic filler is 50 ⁇ m or less, the through electrodes (or bumps provided at the end portions of the through electrodes) in the laminated circuit can be easily electrically connected to each other, and the laminated layer has high reliability. A circuit can be effectively manufactured.
  • the particle size distribution (CV value) of the thermally conductive filler is preferably 15% or more, and particularly preferably 30% or more.
  • the particle size distribution (CV value) is preferably 80% or less, and particularly preferably 60% or less.
  • the particle size distribution (CV value) of the thermally conductive filler is obtained by observing the thermally conductive filler with an electron microscope, measuring the major axis diameter of 200 or more particles, and obtaining the standard deviation of the major axis diameter. It can be obtained as a value obtained by dividing the standard deviation by the average particle diameter.
  • the average axial length (average axial length in the major axis direction) of the thermal conductive filler is preferably 0.01 ⁇ m or more, and particularly 0.05 ⁇ m or more. It is preferable that the thickness is 0.1 ⁇ m or more.
  • the average axial length is preferably 10 ⁇ m or less, particularly preferably 5 ⁇ m or less, and further preferably 1 ⁇ m or less.
  • the aspect ratio of the thermally conductive filler is preferably 1 or more, and particularly preferably 5 or more.
  • the aspect ratio is preferably 20 or less, and particularly preferably 15 or less.
  • the aspect ratio can be obtained as a value obtained by dividing the minor axis average diameter of the thermally conductive filler by the major axis average diameter.
  • the minor axis number average diameter and the major axis number average diameter are measured by measuring the minor axis diameters and major axis diameters of 20 thermally conductive fillers randomly selected from transmission electron micrographs, and calculating the respective arithmetic average values. The number average particle diameter is calculated.
  • the specific gravity of the thermally conductive filler is preferably 1 g / cm 3 or more, and particularly preferably 3 g / cm 3 or more.
  • the specific gravity is preferably 10 g / cm 3 or less, and particularly preferably 6 g / cm 3 or less. When the specific gravity is within the above range, the heat dissipation of the adhesive layer 13 becomes more excellent.
  • content of the heat conductive filler in the adhesive bond layer 13 is 35 mass% or more in a lower limit on the basis of the total amount of the material which comprises the adhesive bond layer 13, and is 40 mass% or more. Is more preferable, and it is especially preferable that it is 50 mass% or more.
  • the upper limit of the content of the heat conductive filler is preferably 95% by mass or less, and more preferably 90% by mass or less. In the material constituting the adhesive layer 13, the content of the heat conductive filler is 35% by mass or more, so that the adhesive layer 13 has better heat dissipation, and the three-dimensional integration according to the present embodiment.
  • a laminated circuit having excellent heat dissipation can be effectively produced. Moreover, content of components other than a heat conductive filler in the material which comprises the adhesive bond layer 13 becomes relatively high because the said content is 95 mass% or less, and the adhesive bond layer 13 is more favorable. Can exhibit excellent adhesiveness.
  • the material constituting the adhesive layer 13 preferably contains a thermosetting component.
  • the thermosetting component is not particularly limited as long as it is an adhesive component usually used for connecting semiconductor chips. Specific examples include epoxy resins, phenol resins, melamine resins, urea resins, polyester resins, urethane resins, acrylic resins, polyimide resins, benzoxazine resins, phenoxy resins, and the like. A combination of the above can be used. Among these, from the viewpoint of adhesiveness and the like, an epoxy resin and a phenol resin are preferable, and an epoxy resin is particularly preferable.
  • Epoxy resin has the property of forming a three-dimensional network upon heating and forming a hardened product.
  • various conventionally known epoxy resins are used. Specifically, glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenyl novolac, cresol novolac; butanediol, Glycidyl ether of alcohols such as polyethylene glycol and polypropylene glycol; Glycidyl ether of carboxylic acid such as phthalic acid, isophthalic acid and tetrahydrophthalic acid; Glycidyl type in which active hydrogen bonded to nitrogen atom such as aniline isocyanurate is substituted with glycidyl group Or an alkyl glycidyl type epoxy resin; vinylcyclohexane diepoxide, 3,4-epoxycyclohexylmethyl-3,4-dicyclohexanecarboxylate, 2- (3,4- Poxy
  • an epoxy resin having a biphenyl skeleton, a dicyclohexadiene skeleton, a naphthalene skeleton, or the like can also be used. These epoxy resins can be used alone or in combination of two or more.
  • the content of the thermosetting component in the material constituting the adhesive layer 13 is preferably a lower limit of 5% by mass or more, based on the total amount of the materials constituting the adhesive layer 13, and 10% by mass. More preferably, it is the above.
  • the upper limit of the content of the thermosetting component is preferably 75% by mass or less, and more preferably 55% by mass or less. When the content of the thermosetting component is within the above range, the above-described heat generation start temperature and heat generation peak temperature can be easily adjusted to the above range.
  • the material constituting the adhesive layer 13 contains the thermosetting component described above, the material preferably further contains a curing agent and a curing catalyst.
  • thermosetting component Although it does not specifically limit as a hardening
  • phenols are preferable from the viewpoint of reactivity with the epoxy resin.
  • phenols include bisphenol A, tetramethyl bisphenol A, diallyl bisphenol A, biphenol, bisphenol F, diallyl bisphenol F, triphenylmethane type phenol, tetrakisphenol, novolac type phenol, cresol novolac resin, and the like. Can be used singly or in combination of two or more.
  • the curing catalyst is not particularly limited, and examples thereof include imidazole-based, phosphorus-based, and amine-based, and can be appropriately selected according to the type of the thermosetting component described above.
  • the latent curing catalyst is preferably used as a microencapsulated latent curing catalyst.
  • an imidazole-based curing catalyst when using an epoxy resin as a curable component, use an imidazole-based curing catalyst as a curing catalyst from the viewpoint of reactivity with the epoxy resin, storage stability, physical properties of the cured product, curing speed, etc. Is preferred.
  • a known catalyst can be used as the imidazole-based curing catalyst, but an imidazole catalyst having a triazine skeleton is preferable from the viewpoint of excellent curability, storage stability, and connection reliability. These may be used alone or in combination of two or more. These may be used as a microencapsulated latent curing catalyst.
  • the melting point of the imidazole-based curing catalyst is preferably 200 ° C. or higher, particularly preferably 250 ° C. or higher, from the viewpoint of excellent curability, storage stability, and connection reliability.
  • the lower limit of the content of the curing catalyst in the material constituting the adhesive layer 13 is preferably 0.1% by mass or more based on the total amount of the materials constituting the adhesive layer 13.
  • the content is more preferably 0.2% by mass or more, and particularly preferably 0.4% by mass or more.
  • the upper limit of the content of the curing catalyst is preferably 10% by mass or less, more preferably 5% by mass or less, and particularly preferably 3% by mass or less. If the content of the curing catalyst in the material constituting the adhesive layer 13 is equal to or higher than the lower limit, the thermosetting component can be sufficiently cured. On the other hand, when the content of the curing catalyst is not more than the above upper limit value, the storage stability of the adhesive layer 13 becomes good.
  • the material constituting the adhesive layer 13 preferably contains a high molecular weight component other than the thermosetting component described above.
  • a high molecular weight component other than the thermosetting component described above.
  • high molecular weight component examples include (meth) acrylic resin, phenoxy resin, polyester resin, polyurethane resin, polyimide resin, polyamideimide resin, siloxane-modified polyimide resin, polybutadiene resin, polypropylene resin, and styrene-butadiene-styrene copolymer.
  • Styrene-ethylene-butylene-styrene copolymer polyacetal resin, polyvinyl acetal resin including polyvinyl butyral resin, butyl rubber, chloroprene rubber, polyamide resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-acrylic acid copolymer , Acrylonitrile-butadiene-styrene copolymer, polyvinyl acetate, nylon, etc., can be used alone or in combination of two or more.
  • (meth) acrylic acid in this specification means both acrylic acid and methacrylic acid.
  • (meth) acrylic resin in this specification means both acrylic acid and methacrylic acid.
  • the high molecular weight components described above it is preferable to use one or more selected from the group consisting of polyvinyl acetal resins, polyester resins, and phenoxy resins.
  • the material constituting the production sheet contains these high molecular weight components, so that the 90 ° C. melt viscosity and the average linear expansion coefficient are both low, and as a result, these values are within the numerical range described later. It becomes easy.
  • the polyvinyl acetal resin is obtained by acetalizing polyvinyl alcohol obtained by saponifying polyvinyl acetate with aldehyde.
  • aldehyde used for acetalization include n-butyraldehyde, n-hexyl aldehyde, n-valeraldehyde and the like.
  • the polyvinyl acetal resin it is also preferable to use a polyvinyl butyral resin acetalized with n-butyraldehyde.
  • polyester resins include polyester resins obtained by polycondensation of dicarboxylic acid components and diol components such as polyethylene terephthalate resin, polybutylene terephthalate resin, and polyethylene oxalate resin; urethane modification obtained by reacting these with a polyisocyanate compound
  • modified polyester resins such as polyester resins; polyester resins grafted with acrylic resins and / or vinyl resins, and the like can be used alone or in combination of two or more.
  • the material constituting the adhesive layer 13 contains a polyvinyl acetal resin or a polyester resin as the high molecular weight component, it is particularly preferable to further contain a phenoxy resin.
  • the material constituting the adhesive layer 13 is more likely to satisfy the numerical range described later in terms of 90 ° C. melt viscosity and average linear expansion coefficient.
  • the phenoxy resin is not particularly limited, and examples thereof include bisphenol A type, bisphenol F type, bisphenol A / bisphenol F copolymer type, biphenol type, and biphenyl type.
  • the lower limit value of the softening point of the high molecular weight component is preferably 50 ° C. or higher, more preferably 100 ° C. or higher, and particularly preferably 120 ° C. or higher.
  • the upper limit value of the softening point of the high molecular weight component is preferably 200 ° C. or less, more preferably 180 ° C. or less, and particularly preferably 150 ° C. or less.
  • the lower limit of the glass transition temperature of the high molecular weight component is preferably 50 ° C. or higher, more preferably 60 ° C. or higher, and particularly preferably 80 ° C. or higher.
  • the high molecular weight component preferably has an upper limit of glass transition temperature of 250 ° C. or lower, more preferably 200 ° C. or lower, and particularly preferably 180 ° C. or lower.
  • the high molecular weight component preferably has a weight average molecular weight of 10,000 or more, more preferably 30,000 or more, and particularly preferably 50,000 or more.
  • the upper limit is preferably 1,000,000 or less, more preferably 700,000 or less, and particularly preferably 500,000 or less. It is preferable for the weight average molecular weight to be not less than the above lower limit value, since the film viscosity can be maintained and the melt viscosity can be lowered.
  • a compatibility with low molecular weight components, such as a thermosetting component improves that a weight average molecular weight is below the said upper limit, it is preferable.
  • the weight average molecular weight in this specification is the value of standard polystyrene conversion measured by the gel permeation chromatography (GPC) method.
  • the content of the high molecular weight component in the material constituting the adhesive layer 13 is preferably a lower limit of 3% by mass or more, preferably 5% by mass or more, based on the total amount of the materials constituting the adhesive layer 13. More preferably, it is particularly preferably 7% by mass or more.
  • the upper limit of the content of the high molecular weight component is preferably 95% by mass or less, more preferably 90% by mass or less, and particularly preferably 80% by mass or less.
  • the content of the high molecular weight component is equal to or higher than the lower limit, the 90 ° C. melt viscosity of the material constituting the adhesive layer 13 can be further reduced, and the above numerical range is easily satisfied.
  • the content of the high molecular weight component is not more than the above upper limit value, the average linear expansion coefficient of the material constituting the adhesive layer 13 can be further reduced, and the numerical range described later is easily satisfied.
  • the material constituting the adhesive layer 13 is a component having a flux function (hereinafter referred to as “flux component”). It is preferable that it contains.
  • the flux component has an action of removing the metal oxide film formed on the electrode surface, makes the electrical connection between the electrodes by solder more reliable, and can improve the connection reliability at the solder joint. .
  • a flux component it does not specifically limit as a flux component, It is preferable that it is a component which has a phenolic hydroxyl group and / or a carboxyl group, and it is especially preferable that it is a component which has a carboxyl group.
  • the component having a carboxyl group has a flux function and also has a function as a curing agent when an epoxy resin described later is used as a thermosetting component. For this reason, the component having a carboxyl group reacts and is consumed as a curing agent after the solder bonding is completed, so that it is possible to suppress problems caused by excessive flux components.
  • Specific flux components include, for example, glutaric acid, 2-methylglutaric acid, orthoanisic acid, diphenolic acid, adipic acid, acetylsalicylic acid, benzoic acid, benzylic acid, azelaic acid, benzylbenzoic acid, malonic acid, 2, 2-bis (hydroxymethyl) propionic acid, salicylic acid, o-methoxybenzoic acid, m-hydroxybenzoic acid, succinic acid, 2,6-dimethoxymethylparacresol, benzoic hydrazide, carbohydrazide, malonic dihydrazide, succinic dihydrazide , Glutaric acid dihydrazide, salicylic acid hydrazide, iminodiacetic acid dihydrazide, itaconic acid dihydrazide, citric acid trihydrazide, thiocarbohydrazide, benzophenone hydrazone, 4,4'-oxybisbenzenesulfonyl
  • rosin derivatives examples include gum rosin, tall rosin, wood rosin, polymerized rosin, hydrogenated rosin, formylated rosin, rosin ester, rosin modified maleic resin, rosin modified phenolic resin, rosin modified alkyd resin, and the like.
  • At least one selected from 2-methylglutaric acid, adipic acid and rosin derivatives is particularly preferable to use at least one selected from 2-methylglutaric acid, adipic acid and rosin derivatives. Since 2-methylglutaric acid and adipic acid have two carboxyl groups in the molecule in the material constituting the adhesive layer 13 even though the molecular weight is relatively small, the flux function is excellent even when added in a small amount. In this embodiment, it can be particularly preferably used. Since the rosin derivative has a high softening point and can impart a flux property while maintaining a low linear expansion coefficient, it can be used particularly suitably in this embodiment.
  • At least one of the melting point and softening point of the flux component is preferably 80 ° C. or higher, more preferably 110 ° C. or higher, and further preferably 130 ° C. or higher. It is preferable that at least one of the melting point and the softening point of the flux component is in the above range because a more excellent flux function can be obtained and outgas can be reduced.
  • fusing point and softening point of a flux component is not specifically limited, What is necessary is just to be below melting
  • the content of the flux component in the material constituting the adhesive layer 13 is preferably such that the lower limit is 0.1% by mass or more based on the total amount of the materials constituting the adhesive layer 13.
  • the content is more preferably 0.2% by mass or more, and particularly preferably 0.3% by mass or more.
  • the upper limit of the content of the flux component is preferably 20% by mass or less, more preferably 15% by mass or less, and particularly preferably 10% by mass or less.
  • the content of the flux component in the material constituting the adhesive layer 13 is not less than the above lower limit value, the electrical connection between the electrodes by solder is made more reliable, and the connection reliability at the solder joint is further improved. Can do.
  • the content of the flux component is not more than the above upper limit value, it is possible to prevent problems such as ion migration due to an excessive flux component.
  • the adhesive layer 13 is further composed of a plasticizer, a stabilizer, a tackifier, a colorant, a coupling agent, an antistatic agent, an antioxidant as a material constituting the adhesive layer 13.
  • You may contain an inorganic filler other than an agent, electroconductive particle, the heat conductive filler mentioned above, etc.
  • the embodiment complements the solder joint.
  • the semiconductor chips can be electrically bonded to each other in a mode different from solder bonding.
  • the thermal conductivity after curing of the adhesive layer 13 is 0.5 W / m ⁇ K.
  • it is preferably 0.7 W / m ⁇ K or more, and more preferably 1.0 W / m ⁇ K or more.
  • the thermal conductivity is preferably 8.0 W / m ⁇ K or less, particularly 4.0 W / m ⁇ K or less, and more preferably 3.0 W / m ⁇ K or less. Is preferred.
  • the thermal conductivity is 0.5 W / m ⁇ K or more
  • the adhesive layer 13 easily exhibits good heat dissipation, and the sheets 1 and 2 for manufacturing a three-dimensional integrated multilayer circuit according to the present embodiment are used.
  • a highly reliable laminated circuit can be effectively manufactured.
  • the thermal conductivity is 8.0 W / m ⁇ K or less
  • the content of the thermally conductive filler in the adhesive layer 13 is not excessively increased, and as a result, good heat dissipation in the adhesive layer 13 is achieved.
  • the adhesiveness of the adhesive layer 13 and the sheet processability are easily compatible.
  • the measuring method of the heat conductivity of the adhesive bond layer 13 is as showing in the test example mentioned later.
  • the material constituting the adhesive layer 13 is a melt viscosity at 90 ° C. before curing (hereinafter, “90 ° C. ) Is preferably 5.0 ⁇ 10 5 Pa ⁇ s or less as an upper limit, particularly preferably 1.0 ⁇ 10 5 Pa ⁇ s or less, and more preferably 5 It is preferably 0.0 ⁇ 10 4 Pa ⁇ s or less.
  • 90 ° C. a melt viscosity at 90 ° C. before curing
  • melt viscosity is less than or equal to the above upper limit, when the adhesive layer 13 is interposed between the electrodes, the semiconductor chip adheres well to the unevenness caused by the through electrodes or bumps on the surface of the semiconductor chip. Generation of voids at the interface with the agent layer 13 can be prevented.
  • the 90 ° C. melt viscosity is preferably 1.0 ⁇ 10 0 Pa ⁇ s or more as a lower limit, particularly preferably 1.0 ⁇ 10 1 Pa ⁇ s or more, and more preferably 1.0 ⁇ It is preferably 10 2 Pa ⁇ s or more.
  • melt viscosity is not less than the above lower limit value, the material constituting the adhesive layer 13 does not flow excessively, and contamination of the apparatus can be prevented when the adhesive layer 13 is stuck or when semiconductor chips are stacked. it can. Therefore, the sheets 1 and 2 for manufacturing a three-dimensional integrated multilayer circuit according to the present embodiment have high reliability when the constituent material has a 90 ° C. melt viscosity in the above range.
  • the 90 ° C. melt viscosity of the material constituting the adhesive layer 13 can be measured using a flow tester. Specifically, for the adhesive layer 13 having a thickness of 15 mm, a flow tester (manufactured by Shimadzu Corporation, CFT-100D) is used under the conditions of a load of 50 kgf, a temperature range of 50 to 120 ° C., and a heating rate of 10 ° C./min. The melt viscosity can be measured.
  • the material constituting the adhesive layer 13 may be an average linear expansion coefficient at 0 to 130 ° C. of the cured product (hereinafter simply referred to as “average linear expansion coefficient”). )) Is preferably 45 ppm or less as an upper limit, particularly preferably 35 ppm or less, and more preferably 25 ppm or less.
  • the average linear expansion coefficient is not more than the above upper limit value, the difference in linear expansion coefficient between the adhesive layer 13 made of a cured product and the semiconductor chip becomes small, and the adhesive layer 13 and the semiconductor chip are based on the difference. The stress that can be generated can be reduced.
  • the sheets 1 and 2 for manufacturing a three-dimensional integrated circuit according to the present embodiment can have high connection reliability between semiconductor chips, and particularly high connection reliability in the temperature cycle test shown in the examples. Will be shown.
  • the lower limit value of the average linear expansion coefficient is not particularly limited, but is preferably 5 ppm or more and more preferably 10 ppm or more from the viewpoint of film formability.
  • the average linear expansion coefficient of the material constituting the adhesive layer 13 can be measured using a thermomechanical analyzer. Specifically, for a cured product obtained by curing the adhesive layer 13 by forming the adhesive layer 13 having a thickness of 45 ⁇ m on the substrate and then treating it at 160 ° C. for 1 hour, a thermomechanical analyzer (The Bruker Ax, TMA4030SA) is used to measure the linear expansion coefficient under the conditions of a load of 2 g, a temperature range of 0 to 300 ° C., and a heating rate of 5 ° C./min. From the measurement results, the average linear expansion coefficient at 0 to 130 ° C. can be calculated.
  • a thermomechanical analyzer The Bruker Ax, TMA4030SA
  • the material constituting the adhesive layer 13 is preferably such that the glass transition temperature (Tg) of the cured product is 150 ° C. or higher as the lower limit, and is 200 ° C. or higher. More preferably, it is particularly preferably 240 ° C. or higher. It is preferable for the glass transition temperature of the cured product to be equal to or higher than the above lower limit value because the cured product is not deformed during the temperature cycle test and stress is hardly generated.
  • the upper limit value of the glass transition temperature of the cured product is not particularly limited, but is preferably 350 ° C. or less and more preferably 300 ° C. or less from the viewpoint of suppressing embrittlement of the cured product.
  • the glass transition temperature of the cured material of the material constituting the adhesive layer 13 was measured using a dynamic viscoelasticity measuring instrument (manufactured by TA Instruments, DMA Q800), with a frequency of 11 Hz, an amplitude of 10 ⁇ m, and an increase. This is the temperature at the maximum point of tan ⁇ (loss elastic modulus / storage elastic modulus) when the viscoelasticity in the tensile mode is measured by raising the temperature from 0 ° C. to 300 ° C. at a temperature rate of 3 ° C./min.
  • the cured product of the material constituting the adhesive layer 13 is a 5% mass reduction temperature by thermogravimetry. However, it is preferable that it is 350 degreeC or more, and it is especially preferable that it is 360 degreeC or more.
  • the 5% mass reduction temperature is 350 ° C. or higher, the cured product of the adhesive layer 13 has excellent resistance to high temperatures. Therefore, even when the cured product is exposed to a high temperature in the production of a laminated circuit, the generation of volatile components accompanying the decomposition of the components contained in the cured product is suppressed, and the performance of the laminated circuit is improved. Maintained.
  • decrease temperature is 500 degrees C or less normally.
  • the 5% mass reduction temperature can be measured using a differential thermal and thermogravimetric simultaneous measurement device.
  • the inflow gas is nitrogen
  • the gas inflow rate is 100 ml / min
  • the temperature rise rate is 20 ° C./min
  • 40 ° C. The temperature is raised to 550 ° C. and thermogravimetric measurement is performed. Based on the obtained thermogravimetric curve, a temperature at which the mass is reduced by 5% relative to the mass at a temperature of 100 ° C. (5% mass reduction temperature) is obtained.
  • the storage elastic modulus at 23 ° C. after the adhesive layer 13 is cured is 1.0 ⁇ 10 2 MPa or more. It is preferable that it is 1.0 * 10 ⁇ 3 > MPa or more especially. Further, the storage elastic modulus is preferably 1.0 ⁇ 10 5 MPa or less, and particularly preferably 1.0 ⁇ 10 4 MPa or less.
  • the storage elastic modulus is in the above range, when a laminated circuit is manufactured, a laminated body in which semiconductor chips and separated adhesive layers 13 are alternately laminated has good strength. Become. As a result, even when semiconductor chips are further laminated or when the laminated body is handled, the laminated state can be maintained well, and a laminated circuit having excellent quality can be manufactured.
  • the storage elastic modulus at 23 ° C. after the adhesive layer 13 is cured can be measured using a dynamic viscoelasticity measuring device. Specifically, after forming an adhesive layer 13 having a thickness of 45 ⁇ m on a substrate, the cured product obtained by curing the adhesive layer 13 by treating at 160 ° C. for 1 hour is used for dynamic viscoelasticity. Depends on the tensile mode when the temperature is raised from 0 ° C to 300 ° C at a frequency of 11 Hz, an amplitude of 10 ⁇ m, and a temperature increase rate of 3 ° C / min, using a measuring instrument (manufactured by TA Instruments, DMA Q800) Measure viscoelasticity. From the measurement result, the storage elastic modulus (MPa) at 23 ° C. after the adhesive layer is cured can be read.
  • MPa storage elastic modulus
  • the exothermic onset temperature (TS) measured at a rate of temperature increase of 10 ° C./min by the DSC method is preferably in the range of 70 ° C. to 150 ° C., particularly in the range of 100 ° C. to 150 ° C. More preferably, it is in the range of 120 ° C to 150 ° C.
  • the adhesive layer 13 can be cured at an unintended stage, for example, when receiving heat generated when a semiconductor wafer is diced by a dicing blade. In addition to being suppressed, the storage stability of the production sheets 1 and 2 is excellent. In particular, when a plurality of adhesive layers 13 existing between semiconductor chips are cured at once after a plurality of semiconductor chips are stacked in order to produce a stacked circuit, an unintended stage before the completion of stacking of semiconductor chips is completed. It can suppress that the adhesive bond layer 13 hardens.
  • the adhesive layer 13 before curing is an exothermic peak temperature measured at a heating rate of 10 ° C./min by a differential scanning calorimetry (DSC) method.
  • TP is preferably exothermic onset temperature (TS) +5 to 60 ° C., particularly preferably TS + 5 to 50 ° C., and more preferably TS + 10 to 40 ° C.
  • TS exothermic onset temperature
  • the tact time in the production of the laminated circuit is often defined by the time for curing the adhesive. Therefore, the time until the adhesive layer 13 is cured is short as described above, so that the tact time can be effectively shortened.
  • the exothermic peak temperature (TP) is in the above-mentioned range, it exists between the semiconductor chips stacked at the beginning of the process in an unintended stage such as before the stacking of the semiconductor chips is completed. Curing of the adhesive layer 13 to be performed can be suppressed.
  • the exothermic start temperature and the exothermic peak temperature can be measured using a differential scanning calorimeter.
  • the adhesive layer 13 having a thickness of 15 mm was heated from room temperature to 300 ° C. at a rate of temperature increase of 10 ° C./min using a differential scanning calorimeter (TA Instruments, Q2000). From the DSC curve obtained by the above, the temperature at which heat generation starts (heat generation start temperature) (TS) and the heat generation peak temperature (TP) can be obtained.
  • TS heat generation start temperature
  • TP heat generation peak temperature
  • the thickness (T2) of the adhesive layer 13 is preferably 2 ⁇ m or more, In particular, it is preferably 5 ⁇ m or more, more preferably 10 ⁇ m or more.
  • the thickness (T2) is preferably 500 ⁇ m or less, particularly preferably 300 ⁇ m or less, and more preferably 100 ⁇ m or less.
  • the thickness (T2) of the adhesive layer 13 is 2 ⁇ m or more, it is possible to satisfactorily embed through electrodes or bumps existing in the semiconductor chip in the adhesive layer 13.
  • the thickness (T2) of the adhesive layer 13 is 500 ⁇ m or less, when the semiconductor chip having the through electrode is bonded via the adhesive layer 13, the adhesive layer 13 oozes out to the side surface. Therefore, a highly reliable semiconductor device can be manufactured.
  • the thickness (T2) of the adhesive bond layer 13 be an average value at the time of measuring a total of 100 points
  • the standard deviation of the thickness (T2) of the adhesive layer 13 is 2.0 ⁇ m or less, preferably 1.8 ⁇ m or less, In particular, it is preferably 1.6 ⁇ m or less.
  • the standard deviation exceeds 2.0 ⁇ m, voids are easily generated when the through electrodes or bumps of the semiconductor wafer are embedded in the adhesive layer 13 using the manufacturing sheets 1 and 2, and a laminated circuit is configured. As a result, it becomes difficult to make the thickness of the adhesive layer 13 and the thickness of the laminated circuit itself uniform, resulting in insufficient heat dissipation of the laminated circuit.
  • the laminated circuit is obtained by laminating a plurality of semiconductor chips and the adhesive layer 13, when the standard deviation of the thickness (T2) of the adhesive layer 13 exceeds 2.0 ⁇ m, the obtained laminated circuit is obtained.
  • the uniformity with respect to the thickness of the laminated circuit is impaired, and good heat dissipation in the laminated circuit cannot be achieved.
  • the measuring method of the standard deviation of the thickness (T2) of the adhesive layer 13 is as shown in a test example described later.
  • the ratio (T2 / T1) of the thickness (T2) of the adhesive layer 13 to the thickness (T1) of the base material 11 Is preferably 0.01 or more, particularly preferably 0.1 or more, and further preferably 0.4 or more.
  • the ratio (T2 / T1) is preferably 1.5 or less, particularly preferably 1.0 or less, and more preferably 0.9 or less.
  • the pasting can be performed satisfactorily, and a laminated circuit having excellent quality can be manufactured.
  • the ratio (T2 / T1) is 0.01 or more, the relative thickness of the base material 11 in the manufacturing sheet 1 is relatively small, and the relative rigidity of the manufacturing sheet 1 is compared. Can be kept low.
  • the through electrodes or bumps present on the semiconductor wafer can be easily embedded in the adhesive layer 13.
  • the ratio (T2 / T1) is 1.5 or less, the relative thickness of the base material 11 in the manufacturing sheet 1 is relatively large, and the relative rigidity of the manufacturing sheet 1 is compared. Highly maintained.
  • the handling property of the manufacturing sheet 1 is excellent, and the manufacturing sheet 1 is easily attached to the semiconductor wafer.
  • the thickness (T1) of the base material 11 be the average value at the time of measuring a total of 100 points at intervals of 50 mm in the manufacturing sheet 1.
  • the pressure-sensitive adhesive layer 12 may be composed of a non-curable pressure-sensitive adhesive, or You may be comprised from a curable adhesive.
  • the adhesive layer 13 is peeled from the laminate of the base material 11 and the pressure-sensitive adhesive layer 12. The Therefore, from the viewpoint of easily performing the peeling, the pressure-sensitive adhesive layer 12 is preferably composed of a curable pressure-sensitive adhesive, and the pressure-sensitive adhesive strength is reduced by curing.
  • the pressure-sensitive adhesive layer 12 When the pressure-sensitive adhesive layer 12 is composed of a curable pressure-sensitive adhesive, the pressure-sensitive adhesive may be an energy ray-curable pressure-sensitive adhesive or a thermosetting pressure-sensitive adhesive.
  • the adhesive layer 12 and the adhesive layer 13 are cured at different stages, when the adhesive layer 13 has thermosetting properties, the adhesive layer 12 is made of an energy ray curable adhesive.
  • the adhesive layer 13 is composed of a thermosetting adhesive when the adhesive layer 13 has energy ray curability.
  • the pressure-sensitive adhesive layer 12 is preferably composed of an energy ray-curable pressure-sensitive adhesive.
  • non-curable pressure-sensitive adhesive those having desired adhesive strength and removability are preferable, for example, acrylic pressure-sensitive adhesive, rubber-based pressure-sensitive adhesive, silicone-based pressure-sensitive adhesive, urethane-based pressure-sensitive adhesive, polyester-based pressure-sensitive adhesive, A polyvinyl ether-based pressure-sensitive adhesive or the like can be used.
  • acrylic pressure-sensitive adhesive is preferable from the viewpoint of effectively suppressing peeling at the interface between the pressure-sensitive adhesive layer 12 and the adhesive layer 13 in an unintended stage such as a dicing process.
  • the energy beam curable pressure-sensitive adhesive may be mainly composed of a polymer having energy beam curable properties, or at least one of a non-energy beam curable polymer (a polymer not having energy beam curable properties).
  • the main component may be a mixture of the monomer and / or oligomer having the above energy ray-curable group. Further, it may be a mixture of a polymer having energy ray curable properties and a non-energy ray curable polymer, a polymer having energy ray curable properties and a monomer having at least one energy ray curable group and / or It may be a mixture with an oligomer or a mixture of these three.
  • the polymer having energy ray curability is preferably a (meth) acrylic acid ester (co) polymer in which a functional group having energy ray curability (energy ray curable group) is introduced into a side chain.
  • This polymer is preferably obtained by reacting an acrylic copolymer having a functional group-containing monomer unit with an unsaturated group-containing compound having a functional group bonded to the functional group.
  • the monomer and / or oligomer having at least one energy ray-curable group for example, an ester of a polyhydric alcohol and (meth) acrylic acid or the like can be used.
  • non-energy ray curable polymer component for example, an acrylic copolymer having the functional group-containing monomer unit described above can be used.
  • the storage elastic modulus at 23 ° C. of the pressure-sensitive adhesive layer 12 is preferably 1 ⁇ 10 3 Pa or more, particularly 1 ⁇ 10. It is preferable that it is 4 Pa or more.
  • the storage elastic modulus is preferably 1 ⁇ 10 9 Pa or less, and particularly preferably 1 ⁇ 10 8 Pa or less.
  • the said storage elastic modulus shall say the storage elastic modulus before hardening, when the adhesive layer 12 is comprised from a curable adhesive. Since the storage elastic modulus at 23 ° C.
  • the storage elastic modulus at 23 ° C. of the pressure-sensitive adhesive layer 12 is, for example, a frequency of 1 Hz, a measurement temperature range of ⁇ 50 to 150 ° C. using a dynamic viscoelasticity measuring apparatus (ARES, manufactured by T.A. Instruments) It can be measured under the condition of a temperature rising rate of 3 ° C./min.
  • the thickness of the pressure-sensitive adhesive layer 12 is not particularly limited, for example, it is preferably 1 ⁇ m or more, and particularly preferably 10 ⁇ m or more.
  • the thickness is preferably, for example, 100 ⁇ m or less, and particularly preferably 50 ⁇ m or less.
  • the thickness of the pressure-sensitive adhesive layer 12 is 1 ⁇ m or more, the pressure-sensitive adhesive layer 12 can exhibit good adhesive force.
  • the said thickness is 100 micrometers or less, it becomes possible to suppress that the adhesive layer 12 becomes unnecessary thickness, and it becomes possible to reduce cost.
  • the material constituting the base material 11 is not particularly limited. However, when the manufacturing sheet 2 is a dicing sheet integrated adhesive sheet (dicing / die bonding sheet), the material constituting the base 11 is a material generally used for the base constituting the dicing sheet. Preferably there is.
  • the material of the base material 11 includes polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polybutylene terephthalate, polyurethane, and ethylene vinyl acetate copolymer.
  • the material constituting the base material 11 is preferably a material generally used for the base material constituting the back grind sheet.
  • a material of such a base material 11 what consists of resin, such as a polyethylene terephthalate, polyethylene, a polypropylene, an ethylene-vinyl acetate copolymer, is mentioned, The mixture of 1 type, or 2 or more types of these is used. Can be used.
  • the surface on the pressure-sensitive adhesive layer 12 side of the substrate 11 may be subjected to surface treatment such as primer treatment, corona treatment, plasma treatment, etc., in order to improve the adhesion with the pressure-sensitive adhesive layer 12.
  • the tensile modulus of elasticity of the substrate 11 at 23 ° C. is preferably 100 MPa or more, particularly preferably 200 MPa or more, Furthermore, it is preferable that it is 300 MPa or more. Further, the tensile elastic modulus is preferably 5000 MPa or less, particularly preferably 1000 MPa or less, and further preferably 400 MPa or less. Since the tensile elastic modulus at 23 ° C. of the base material 11 is within the above range, when the manufacturing sheet 2 is affixed to the semiconductor wafer, the through electrodes or bumps existing on the semiconductor wafer are satisfactorily applied to the adhesive layer 13. It becomes possible to embed.
  • the manufacturing sheet 2 when making the manufacturing sheet 2 into a dicing sheet integrated adhesive sheet, the manufacturing sheet 2 is expanded and the space
  • the thickness (T1) of the base material 11 is not particularly limited, for example, it is preferably 10 ⁇ m or more, and particularly preferably 15 ⁇ m or more. Further, the thickness (T1) is, for example, preferably 500 ⁇ m or less, and particularly preferably 100 ⁇ m or less. Since the thickness (T1) of the base material 11 is within the above range, the value of the ratio (T2 / T1) of the thickness (T2) of the adhesive layer 12 to the thickness (T1) of the base material 11 described above is set. It becomes easy to set the above-mentioned range, and the handling property when sticking the manufacturing sheets 1 and 2 to the semiconductor wafer becomes excellent. As a result, it is possible to effectively manufacture a laminated circuit having excellent quality.
  • the configuration of the release sheet 14 is arbitrary, and examples thereof include a plastic film such as a polyester film such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and a polyolefin film such as polypropylene and polyethylene. It is preferable that a peeling process is performed on these peeling surfaces (surfaces in contact with the adhesive layer 13).
  • the release agent used for the release treatment include silicone-based, fluorine-based, and long-chain alkyl-based release agents.
  • a sheet 1 for manufacturing a 3D integrated layered circuit according to the first embodiment can be manufactured in the same manner as a sheet for manufacturing a conventional 3D integrated layered circuit.
  • seat 1 for three-dimensional integrated laminated circuit manufacture provided with the peeling sheet 14 it contains the heat conductive filler mentioned above, the material which comprises the other adhesive bond layer 13, and a solvent or a dispersion medium depending on necessity.
  • a coating solution is prepared, and a coating film is formed on the release surface of the release sheet 14 by applying the coating solution with a die coater, a curtain coater, a spray coater, a slit coater, a knife coater, etc.
  • the production sheet 2 can be produced by drying.
  • the properties of the coating liquid are not particularly limited as long as it can be applied, and may contain a component for forming the adhesive layer 13 as a solute or a dispersoid. .
  • the release sheet 14 may be peeled off as a process material, or may protect the adhesive layer 13 until being attached to the semiconductor wafer.
  • a coating liquid is applied on the release surface of the release sheet 14 described above.
  • a coating film is formed and dried to form a laminate composed of the adhesive layer 13 and the release sheet 14, and the other side of the adhesive layer 13 of the laminate opposite to the release sheet 14 is provided as another release sheet. It can affix on the 14 peeling surface, and can obtain the laminated body which consists of peeling sheet 14 / adhesive layer 13 / release sheet 14.
  • the release sheet 14 in this laminate may be peeled off as a process material, or the adhesive layer 13 may be protected until being attached to a semiconductor wafer.
  • the three-dimensional integrated circuit manufacturing sheet 2 according to the second embodiment can be manufactured in the same manner as the conventional three-dimensional integrated circuit manufacturing sheet 2. For example, a laminate of the adhesive layer 13 and the release sheet 14 and a laminate of the pressure-sensitive adhesive layer 12 and the base material 11 are respectively produced, and the lamination is performed so that the adhesive layer 13 and the pressure-sensitive adhesive layer 12 are in contact with each other.
  • seat 2 for manufacture can be obtained by bonding a body.
  • the laminate of the adhesive layer 13 and the release sheet 14 is prepared by preparing the above-described coating liquid for forming the adhesive layer 13 and applying the coating liquid onto the release surface of the release sheet 14 by the application method described above. It can be obtained by forming a film and drying the coating film.
  • the solvent examples include organic solvents such as toluene, ethyl acetate, and methyl ethyl ketone.
  • organic solvents such as toluene, ethyl acetate, and methyl ethyl ketone.
  • the solid content concentration is 5% by mass or more, occurrence of repellency or the like is suppressed when forming a coating film, and the solvent can be easily dried, resulting in variations in the thickness and physical properties of the adhesive layer 13. It becomes easier to suppress. As a result, it becomes easy to adjust the standard deviation of the thickness (T2) of the adhesive layer 13 to the aforementioned range. Moreover, aggregation of the filler in a coating liquid is suppressed because the said solid content concentration is 55 mass% or less, it becomes easy to send a coating liquid, and it generate
  • the viscosity at 25 ° C. of the coating solution measured with a B-type viscometer is preferably 20 mPa ⁇ s or more, and particularly preferably 25 mPa ⁇ s or more.
  • the viscosity is preferably 500 mPa ⁇ s or less, and particularly preferably 100 mPa ⁇ s or less.
  • the laminate of the pressure-sensitive adhesive layer 12 and the base material 11 is prepared by preparing a coating liquid containing a material constituting the pressure-sensitive adhesive layer 12 and, if desired, further a solvent or a dispersion medium. It can be obtained by coating on one side to form a coating film and drying the coating film. Moreover, as another production method of the laminate of the pressure-sensitive adhesive layer 12 and the base material 11, the pressure-sensitive adhesive layer 12 is formed on the release surface of the process release sheet, and then the pressure-sensitive adhesive layer 12 is formed on the base material 11. The laminate of the pressure-sensitive adhesive layer 12 and the substrate 11 may be obtained by transferring to one side and peeling the process release sheet from the pressure-sensitive adhesive layer 12.
  • a three-dimensional integrated multilayer circuit can be manufactured using the sheets 1 and 2 for manufacturing a three-dimensional integrated multilayer circuit according to the present embodiment. Below, the example of the manufacturing method is demonstrated.
  • the sheets 1 and 2 for manufacturing a three-dimensional integrated multilayer circuit according to this embodiment are attached to one side of a semiconductor wafer having through electrodes. Specifically, the surface on the adhesive layer 13 side of the three-dimensional integrated laminated circuit manufacturing sheets 1 and 2 is attached to one side of the semiconductor wafer.
  • a semiconductor wafer having a through electrode may be weak in strength. Therefore, the semiconductor wafer may be reinforced by fixing to a support such as support glass via a temporary fixing material. In this case, the surface of the laminated body on the semiconductor wafer side and the three-dimensional integrated laminated circuit manufacturing sheets 1 and 2 are bonded together, and then the support is peeled off together with the temporary fixing material.
  • a dicing sheet is further laminated.
  • the dicing sheet may be attached to the semiconductor wafer first, and the manufacturing sheet 1 may be attached to the surface of the semiconductor wafer opposite to the dicing sheet.
  • the manufacturing sheet 1 may be attached to the semiconductor wafer first, and the dicing sheet may be attached to the surface of the semiconductor wafer opposite to the manufacturing sheet 1.
  • you may affix a dicing sheet on the surface at the side of the manufacturing sheet 1 of the laminated body obtained by sticking the manufacturing sheet 1 with respect to a semiconductor wafer.
  • the 3D integrated laminated circuit manufacturing sheet 2 according to the second embodiment it is not necessary to further stack the dicing sheet, and the following dicing process can be performed on the manufacturing sheet 2.
  • the semiconductor wafer is cut into individual chips (dicing process).
  • the adhesive layer 13 is also cut together with the semiconductor wafer.
  • the method for cutting the wafer is not particularly limited, and it is performed by various conventionally known dicing methods. For example, there is a method of cutting a semiconductor wafer using a dicing blade. Also, other dicing methods such as laser dicing may be employed.
  • the semiconductor chip After the dicing process, pick up the semiconductor chip. At this time, the semiconductor chip is picked up with the adhesive layer 13 separated into pieces. That is, the semiconductor chip to which the adhesive layer 13 is attached is peeled from the pressure-sensitive adhesive layer of the dicing sheet or the pressure-sensitive adhesive layer 12 of the sheet 2 for manufacturing a three-dimensional integrated laminated circuit.
  • the adhesive layer 12 is comprised from an energy-beam curable adhesive, it is preferable to irradiate an energy ray with respect to the adhesive layer 12 before a pick-up. As a result, the adhesive strength of the pressure-sensitive adhesive is reduced, so that the semiconductor chip can be easily picked up.
  • the interval between the semiconductor chips may be expanded by expanding the dicing sheet or the sheet 2 for manufacturing a three-dimensional integrated laminated circuit before the pickup.
  • the semiconductor chip with an adhesive layer is placed on the circuit board.
  • the semiconductor chip with an adhesive layer is positioned on the circuit board so that the electrodes on the semiconductor chip side and the electrodes on the circuit board face each other.
  • the semiconductor chip with an adhesive layer and the circuit board are heated and pressurized, and then cooled.
  • the semiconductor chip and the circuit board are bonded via the adhesive layer 13, and the electrode of the semiconductor chip and the electrode of the chip mounting portion on the circuit board are electrically connected via the solder bumps formed on the semiconductor chip.
  • the soldering conditions depend on the metal composition to be used. For example, in the case of Sn—Ag, it is preferable to heat at 200 to 300 ° C. for 1 to 30 seconds.
  • the adhesive layer 13 interposed between the semiconductor chip and the circuit board is cured.
  • Curing can be performed, for example, by heating at 100 to 200 ° C. for 1 to 120 minutes. Moreover, you may perform this hardening process on pressurization conditions. Further, such a curing step may be omitted when the curing of the adhesive layer 13 is completed in the above-described solder bonding step.
  • a new semiconductor chip with an adhesive layer is stacked on the semiconductor chip bonded onto the circuit board as described above.
  • the surface on the adhesive layer 13 side of the new semiconductor chip with an adhesive layer and the surface of the semiconductor chip laminated on the circuit board opposite to the circuit board are in contact with each other, and the two semiconductor chips Lamination is performed so that the through electrodes are electrically connected to each other.
  • solder bonding is performed between the penetrating electrode of the newly stacked semiconductor chip and the penetrating electrode of the semiconductor chip stacked on the circuit board, and an adhesive layer 13 interposed between the semiconductor chips is further formed. Harden.
  • the solder bonding and the curing of the adhesive layer 13 at this time can be performed by the method and conditions described above. Thereby, a laminated body in which two semiconductor chips are laminated on the circuit board is obtained.
  • the adhesive layer 13 contains a thermally conductive filler, and the standard deviation of the thickness (T2) of the adhesive layer 13 is in the above-described range, so that the laminated circuit has excellent heat dissipation. It will be a thing. Therefore, by using the three-dimensional integrated multilayer circuit manufacturing sheets 1 and 2 according to this embodiment, a highly reliable multilayer circuit can be manufactured.
  • each time one semiconductor chip is laminated the solder bonding and the adhesive layer 13 are cured, but a plurality of semiconductor chips are laminated for process efficiency. After that, the solder bonding between these semiconductor chips and the curing of the adhesive layer 13 interposed between these semiconductor chips may be finally performed collectively.
  • Examples 1 to 7, Comparative Example 1 A composition containing the constituent components shown in Table 1 was diluted with methyl ethyl ketone so that the solid content concentration was 40% by mass to obtain a coating solution. It was 50 mPa * s when the viscosity at 25 degrees C of the said coating liquid was measured using the B-type viscosity meter. The coating liquid is applied onto a silicone-treated release film (SP-PET 381031 manufactured by Lintec Corporation), and the resulting coating film is dried in an oven at 100 ° C. for 1 minute, thereby bonding to a thickness of 45 ⁇ m. The 1st laminated body which consists of an agent layer and a peeling film was obtained.
  • SP-PET 381031 silicone-treated release film
  • the pressure-sensitive adhesive composition obtained as described above was applied to one side of an ethylene-methacrylic acid copolymer (EMAA) film (thickness: 100 ⁇ m, tensile modulus: 230 MPa) as a base material to form a coating film did.
  • EVA ethylene-methacrylic acid copolymer
  • seat for three-dimensional integrated laminated circuit manufacture was obtained by bonding the surface by the side of the adhesive layer in a 1st laminated body, and the surface by the side of the adhesive layer in a 2nd laminated body.
  • Example 2 A composition containing the components shown in Table 1 was diluted with methyl ethyl ketone so that the solid content concentration became 55% by mass to obtain a coating solution. It was 150 mPa * s when the viscosity at 25 degrees C of the said coating liquid was measured using the B-type viscosity meter. A sheet for producing a three-dimensional integrated laminated circuit was obtained in the same manner as in Example 1 except that the adhesive layer was formed using the coating solution.
  • High molecular weight component bisphenol A (BPA) / bisphenol F (BPF) copolymerized phenoxy resin: manufactured by Tohto Kasei Co., Ltd., product name “ZX-1356-2”, glass transition temperature 71 ° C., weight average molecular weight 60,000
  • Thermosetting component / Epoxy resin 1 Tris (hydroxyphenyl) methane type solid epoxy resin, manufactured by Japan Epoxy Resin Co., Ltd., product name “E1032H60”, 5% weight loss temperature 350 ° C., solid, melting point 60 ° C.
  • Epoxy resin 2 Bis-F type liquid epoxy resin, manufactured by Japan Epoxy Resin, product name “YL-983U”, epoxy equivalent 184
  • Epoxy resin 3 long-chain Bis-F modified epoxy resin, manufactured by Japan Epoxy Resin, product name “YL-7175”
  • Curing catalyst 2MZA-PW 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)]-ethyl-s-triazine, manufactured by Shikoku Kasei Kogyo Co., Ltd., product name “2MZA-PW”, melting point 250 °C Flux component , rosin derivative: Arakawa Chemical Industries, softening point 124-134 ° C
  • Filler / thermally conductive filler (spherical alumina) spherical alumina, manufactured by Denki Kagaku Kogyo Co., Ltd., product name “DAM-0”, average particle size 3 ⁇ m, thermal conductivity 40 W / m ⁇ K -
  • the storage elastic modulus at 23 ° C. of the pressure-sensitive adhesive layer described above was obtained by laminating a plurality of pressure-sensitive adhesive layers to produce a pressure-sensitive adhesive layer laminate having a diameter of 10 mm.
  • a sample for measurement obtained by punching into a circle is measured using a dynamic viscoelasticity measuring apparatus (manufactured by TA Instruments, ARES) at a frequency of 1 Hz, a measurement temperature range of ⁇ 50 to 150 ° C., and a temperature increase rate of 3
  • the storage elastic modulus (Pa) is measured under the condition of ° C / min.
  • the sample was cured by heating at 130 ° C. for 2 hours, and the thermal conductivity (W / m ⁇ K) was measured using a thermal conductivity measuring device (HC-110, manufactured by EKO). The results are shown in Table 2.
  • the evaluation wafer was diced together with the adhesive layer using a full auto dicing saw (DFD651, manufactured by Disco Corporation), and diced into chips having a size of 7.3 mm ⁇ 7.3 mm in plan view.
  • DMD651 full auto dicing saw
  • the chip was picked up together with the separated adhesive layer, and then flip chip bonded to the substrate. Thereafter, the second-stage chip with the adhesive layer was flip-chip bonded onto the first-stage chip temporarily placed on the substrate. This procedure was repeated to produce a semiconductor device in which a total of five stages of chips were stacked on the substrate.
  • a temperature cycle test was performed in which the obtained semiconductor device was subjected to 1000 cycles in an environment in which ⁇ 55 ° C., 10 minutes and 125 ° C., 10 minutes was one cycle.
  • the connection resistance value between the semiconductor chips was measured with a digital multimeter, and the change rate of the connection resistance value in the semiconductor device after the test with respect to the connection resistance value in the semiconductor device before the test was measured. And heat dissipation was evaluated according to the following evaluation criteria. The results are shown in Table 2.
  • X The change rate of the connection resistance value exceeds 20%.
  • Test Example 4 Evaluation of Embedding A plurality of semiconductor devices were manufactured by the method described in Test Example 3. The four sides of five semiconductor devices randomly selected from these semiconductor devices are observed with a digital microscope to confirm the presence or absence of cracks in the bumps and the state of embedding the bumps in the adhesive layer. The thickness in the stacking direction on the surface was measured. Based on these results, the embedding property of the bumps in the three-dimensional integrated laminated circuit manufacturing sheets obtained in Examples and Comparative Examples was evaluated according to the following evaluation criteria. The results are shown in Table 2. ⁇ : In all the five semiconductor devices, no crack was generated in the bump, the bump was satisfactorily embedded in the adhesive layer, and the thickness in the stacking direction was the same between the four side surfaces. X: Among five semiconductor devices, there are cracks in the bumps, insufficient embedding of the bumps in the adhesive layer, or thicknesses in the stacking direction that are not the same between the four side surfaces .
  • the adhesive layer in the sheet for producing a three-dimensional integrated laminated circuit according to the example has an excellent thermal conductivity of 0.5 W / m ⁇ K or more, and the thickness of the adhesive layer ( The standard deviation of T2) was 2.0 ⁇ m or less.
  • seat for three-dimensional integrated laminated circuit manufacture obtained in the Example is confirmed to be excellent in heat dissipation, the result of the temperature cycle test is good, and the bump The embeddability was also excellent.
  • the adhesive layer in the sheet for manufacturing a three-dimensional integrated laminated circuit according to the comparative example has an insufficient thermal conductivity of 0.3 W / m ⁇ K, and was manufactured using the manufacturing sheet.
  • the heat dissipation of the laminated circuit was also insufficient.
  • the standard deviation of the thickness (T2) of the adhesive layer is 2.5 ⁇ m, the heat dissipation of the laminated circuit is insufficient, and the bump It was inferior in embedding property.
  • the sheet for producing a three-dimensional integrated laminated circuit according to the present invention can be suitably used for producing a laminated circuit having excellent heat dissipation and high reliability.

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  • Engineering & Computer Science (AREA)
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PCT/JP2017/005142 2016-04-05 2017-02-13 三次元集積積層回路製造用シートおよび三次元集積積層回路の製造方法 WO2017175481A1 (ja)

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TW201802973A (zh) 2018-01-16

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