WO2014162974A1 - アンダーフィル用接着フィルム、裏面研削用テープ一体型アンダーフィル用接着フィルム、ダイシングテープ一体型アンダーフィル用接着フィルム及び半導体装置 - Google Patents
アンダーフィル用接着フィルム、裏面研削用テープ一体型アンダーフィル用接着フィルム、ダイシングテープ一体型アンダーフィル用接着フィルム及び半導体装置 Download PDFInfo
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- WO2014162974A1 WO2014162974A1 PCT/JP2014/058851 JP2014058851W WO2014162974A1 WO 2014162974 A1 WO2014162974 A1 WO 2014162974A1 JP 2014058851 W JP2014058851 W JP 2014058851W WO 2014162974 A1 WO2014162974 A1 WO 2014162974A1
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- adhesive film
- underfill
- tape
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- underfill adhesive
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- C—CHEMISTRY; METALLURGY
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- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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Definitions
- the present invention relates to an underfill adhesive film, a back-grinding tape-integrated underfill adhesive film, a dicing tape-integrated underfill adhesive film, and a semiconductor device.
- a liquid underfill material may be filled in a space between the semiconductor chip and the substrate after the semiconductor chip and the substrate are electrically connected (Patent Document 1).
- Patent Document 2 a technique for filling a space between a semiconductor chip and a substrate using a sheet-like underfill material has been proposed.
- the sheet-like underfill material is required to have flexibility, but if it is attempted to increase the flexibility, the glass transition temperature is lowered and the thermal reliability is lowered. On the other hand, if it is attempted to increase the thermal reliability of the underfill adhesive film, the flexibility is lowered, and the workability is lowered.
- the present invention has been made in view of the above problems, and an object thereof is to provide an adhesive film for underfill that can obtain high thermal reliability without impairing flexibility.
- the present invention includes an epoxy resin having a number average molecular weight of 600 or less, a phenol resin having a number average molecular weight exceeding 500, and a resin component including an elastomer, and the content of the epoxy resin in the resin component is 5 to 50% by weight.
- the content of the phenol resin is 5 to 50% by weight.
- the glass transition temperature can be increased, and an epoxy resin having a number average molecular weight of 600 or less (relatively low). Since a specific amount of a molecular weight epoxy resin) is blended, good flexibility is obtained. Furthermore, by blending an elastomer, it is possible to maintain viscosity while maintaining flexibility.
- the hydroxyl equivalent of the phenol resin is 200 g / eq or more.
- it is 200 g / eq or more, the distance between the crosslinking points is increased, shrinkage due to thermosetting is suppressed, and the thermal reliability of the semiconductor element can be improved.
- the phenol resin includes a skeleton represented by the formula (I). (In the formula, n represents an integer.) Thereby, since the glass transition point can be maintained, the thermal reliability can be further improved.
- the epoxy resin is a bisphenol A type epoxy resin or a bisphenol F type epoxy resin. Thereby, it is possible to obtain good thermal reliability while improving flexibility.
- the content of the elastomer in the resin component is preferably 10 to 40% by weight. When the content of the elastomer is within the above range, high thermal reliability can be obtained while maintaining flexibility.
- the elastomer is an acrylic resin. Thereby, heat resistance and flexibility can be improved while maintaining electrical reliability.
- the viscosity of the adhesive film for underfill is measured at 40 to 100 ° C.
- the unevenness of the adherend can be filled without a gap.
- the minimum viscosity at 100 to 200 ° C. is preferably 100 Pa ⁇ s or more.
- production of the void by the outgas from an adhesive film can be suppressed as it is 100 Pa * s or more.
- the adhesive film for underfill contains 30 to 70% by weight of an inorganic filler.
- the content of the inorganic filler is 30% by weight or more, the properties of the thermoset can be improved and the thermal reliability can be improved.
- corrugation of a bump formation surface can be embedded favorably.
- the present invention also relates to a backgrinding tape-integrated underfill adhesive film comprising the underfill adhesive film and a backgrinding tape, wherein the underfill adhesive film is provided on the backgrinding tape. Manufacturing efficiency can be improved by integrally using the underfill adhesive film and the back grinding tape.
- the present invention also relates to a dicing tape-integrated underfill adhesive film comprising the underfill adhesive film and a dicing tape, wherein the underfill adhesive film is provided on the dicing tape. Manufacturing efficiency can be improved by using the underfill adhesive film and the dicing tape integrally.
- the present invention also relates to a semiconductor device manufactured using the underfill adhesive film.
- the present invention also relates to a semiconductor device fabricated using the above-mentioned back-grinding tape-integrated underfill adhesive film.
- the present invention also relates to a semiconductor device fabricated using a dicing tape-integrated underfill adhesive film.
- the underfill adhesive film of the present invention includes a resin component including an epoxy resin having a number average molecular weight of 600 or less, a phenol resin having a number average molecular weight exceeding 500, and an elastomer.
- the glass transition temperature can be increased, and an epoxy resin having a number average molecular weight of 600 or less (relatively low). Since a specific amount of a molecular weight epoxy resin) is blended, good flexibility is obtained. Furthermore, by blending an elastomer, it is possible to maintain viscosity while maintaining flexibility.
- the number average molecular weight of the epoxy resin is 600 or less, preferably 500 or less, and more preferably 400 or less. Since it is 600 or less, good flexibility is obtained.
- the minimum of the number average molecular weight of an epoxy resin is not specifically limited, For example, it is 300 or more.
- the number average molecular weight is obtained by standard polystyrene conversion based on the measured value by gel permeation chromatography (GPC).
- GPC gel permeation chromatography uses four columns of TSK G2000H HR, G3000H HR, G4000H HR, and GMH-H HR (all manufactured by Tosoh Corporation) in series. Tetrahydrofuran is used as the solution.
- the sample is used under the conditions of a flow rate of 1 ml / min, a temperature of 40 ° C., a sample concentration of 0.1 wt% tetrahydrofuran solution and a sample injection amount of 500 ⁇ l, and a differential refractometer is used as a detector.
- the epoxy equivalent of the epoxy resin having a number average molecular weight of 600 or less is not particularly limited, but is preferably 100 g / eq or more, and more preferably 150 g / eq or more. If it is less than 100 g / eq, there is a possibility that thermal reliability cannot be obtained due to curing shrinkage due to the dense crosslinking points.
- the upper limit of the epoxy equivalent is preferably 500 g / eq or less, and more preferably 300 g / eq or less. When it exceeds 1000 g / eq, there is a possibility that sufficient thermal reliability cannot be obtained due to sparse crosslinking points.
- epoxy resins having a number average molecular weight of 600 or less include bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene type, and fluorene type. , Phenol novolak type, orthocresol novolak type, trishydroxyphenylmethane type, tetraphenylolethane type and other bifunctional epoxy resins and polyfunctional epoxy resins, or hydantoin type, trisglycidyl isocyanurate type and glycidylamine type epoxy resins Is used. These can be used alone or in combination of two or more. Of these, bisphenol A type epoxy resins and bisphenol F type epoxy resins are preferred because of their low viscosity at normal temperature and good handleability.
- the content of an epoxy resin having a number average molecular weight of 600 or less in the resin component is 5% by weight or more, preferably 6% by weight or more. Since it is 5% by weight or more, good flexibility is obtained.
- the content of the epoxy resin having a number average molecular weight of 600 or less in the resin component is 50% by weight or less, preferably 20% by weight or less, more preferably 10% by weight or less. Since it is 50 weight% or less, the tack of a sheet
- the adhesive film for underfill of the present invention contains a phenol resin having a number average molecular weight exceeding 500.
- the number average molecular weight of the phenol resin is preferably 1000 or more, and more preferably 1200 or more.
- the upper limit of the number average molecular weight of the phenol resin is not particularly limited, but is preferably 10,000 or less. When it is 10,000 or less, solubility in an organic solvent is improved, and productivity can be improved.
- the hydroxyl equivalent of the phenol resin having a number average molecular weight exceeding 500 is not particularly limited, but is preferably 200 g / eq or more. When it is 200 g / eq or more, the distance between the crosslinking points is increased, shrinkage due to thermosetting is suppressed, and the thermal reliability of the semiconductor element can be improved.
- the upper limit of the hydroxyl equivalent is not particularly limited, but is preferably 500 g / eq or less.
- phenol resin having a number average molecular weight exceeding 500 examples include, for example, phenol novolak resins, phenol aralkyl resins, cresol novolak resins, tert-butylphenol novolak resins, nonylphenol novolak resins, and the like, resol type phenol resins, and polyparaoxystyrene. And polyoxystyrene. These can be used alone or in combination of two or more. Of these, phenol aralkyl resins are preferable from the viewpoint of thermal reliability, and those containing a skeleton represented by the formula (I) are more preferable. Yes. (In the formula, n represents an integer.)
- the content of the phenol resin having a number average molecular weight exceeding 500 in the resin component is 5% by weight or more, preferably 10% by weight or more, and more preferably 20% by weight or more. Since it is 5 weight% or more, high thermal reliability is acquired.
- the content of the phenol resin having a number average molecular weight exceeding 500 in the resin component is 50% by weight or less, preferably 40% by weight or less. Since it is 50% by weight or less, good flexibility is obtained.
- the elastomer is not particularly limited, but an acrylic resin is preferable from the viewpoint of electrical reliability and heat resistance.
- the acrylic resin is not particularly limited, and one or more of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms, is used as a component. And the like.
- alkyl group examples include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2 -Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group, dodecyl group and the like.
- the other monomer forming the polymer is not particularly limited, and for example, a cyano group-containing monomer such as acrylonitrile, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic Carboxyl group-containing monomers such as acid, fumaric acid or crotonic acid, acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxy (meth) acrylic acid Propyl, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxy (meth) acrylate
- Lauril young Is a hydroxyl group-containing monomer such as (4-hydroxymethylcyclohexyl) -methyl acrylate, styren
- the weight average molecular weight of the elastomer is not particularly limited, but is preferably 100,000 or more, more preferably 300,000 or more. When it is 100,000 or more, good flexibility can be imparted. On the other hand, the weight average molecular weight of the elastomer is preferably 800,000 or less, more preferably 500,000 or less.
- the content of the elastomer in the resin component is preferably 10% by weight or more, more preferably 15% by weight or more. When it is 10% by weight or more, good flexibility is obtained. On the other hand, the content of the elastomer in the resin component is preferably 50% by weight or less, more preferably 40% by weight or less, and further preferably 35% by weight or less. Good thermal reliability is acquired as it is 40 weight% or less.
- the epoxy resin having a number average molecular weight of 600 or less the phenol resin having a number average molecular weight exceeding 500, and an elastomer
- other resin components may be blended.
- other resin components include an epoxy resin having a number average molecular weight exceeding 600, a phenol resin having a number average molecular weight of 500 or less, and the like.
- the epoxy resin whose number average molecular weight is 1000 or more is preferable.
- the epoxy resin having a number average molecular weight of 1000 or more an epoxy resin having a number average molecular weight of 1500 or more is preferable.
- the upper limit of the number average molecular weight is not particularly limited, but is preferably 10,000 or less. When it is 10,000 or less, solubility in an organic solvent is improved, and productivity can be improved.
- an epoxy resin of the type exemplified as an epoxy resin having a number average molecular weight of 600 or less can be used.
- the content of the epoxy resin having a number average molecular weight of 1000 or more in the resin component is preferably 10% by weight or more, more preferably 20% by weight or more. Since it is 10 weight% or more, hardened
- the content of the epoxy resin having a number average molecular weight of 1000 or more in the resin component is preferably 40% by weight or less, more preferably 30% by weight or less. Since it is 40% by weight or less, flexibility can be maintained.
- the adhesive film for underfill of the present invention preferably contains a curing accelerating catalyst. Accordingly, epoxy resin (epoxy resin having a number average molecular weight of 600 or less, epoxy resin having a number average molecular weight of more than 600) and phenol resin (phenol resin having a number average molecular weight of more than 500, phenol resin having a number average molecular weight of 500 or less) Etc.) can be accelerated.
- the curing accelerating catalyst is not particularly limited and can be appropriately selected from known curing accelerating catalysts.
- an amine curing accelerator for example, an amine curing accelerator, a phosphorus curing accelerator, an imidazole curing accelerator, a boron curing accelerator, a phosphorus-boron curing accelerator, or the like can be used.
- imidazole curing accelerators are preferable, and 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole are more preferable.
- the content of the curing accelerating catalyst is preferably 0.1 parts by weight or more with respect to 100 parts by weight of the total content of the epoxy resin and the phenol resin. When it is 0.1 part by weight or more, the curing time by the heat treatment is shortened, and the productivity can be improved.
- the content of the thermosetting acceleration catalyst is preferably 5 parts by weight or less. The preservability of a thermosetting resin can be improved as it is 5 weight part or less.
- the adhesive film for underfill of the present invention preferably contains an inorganic filler.
- an inorganic filler include quartz glass, talc, silica (such as fused silica and crystalline silica), alumina, aluminum nitride, silicon nitride, and boron nitride powder.
- silica is preferable and fused silica is more preferable in terms of excellent insulating properties and a low coefficient of thermal expansion.
- the average particle size of the inorganic filler is preferably 0.01 ⁇ m or more, more preferably 0.05 ⁇ m or more, and further preferably 0.5 ⁇ m or more.
- the influence on the flexibility by the surface area of a filler can be suppressed as it is 0.01 micrometer or more.
- the average particle diameter of the inorganic filler is preferably 10 ⁇ m or less, more preferably 1 ⁇ m or less. When it is 10 ⁇ m or less, the gap between the semiconductor element and the substrate can be satisfactorily filled.
- the average particle diameter is a value obtained by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).
- the content of the inorganic filler in the underfill adhesive film is preferably 30% by weight or more, and more preferably 35% by weight or more. When it is 30% by weight or more, the film viscosity at a high temperature can be adjusted to a favorable range.
- the content of the inorganic filler in the underfill adhesive film is preferably 70% by weight or less, more preferably 50% by weight or less. When it is 70% by weight or less, good flexibility can be obtained, and unevenness on the bump forming surface can be embedded well.
- a flux may be added in order to remove the oxide film on the surface of the solder bump and facilitate mounting of the semiconductor element.
- the flux is not particularly limited, and a conventionally known compound having a flux action can be used.
- the underfill adhesive film of the present invention may be colored as necessary. Although it does not restrict
- a polyfunctional compound that reacts with a functional group at the molecular chain end of the polymer may be added as a crosslinking agent during production.
- the crosslinking agent include polyisocyanate compounds such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyhydric alcohol and diisocyanate.
- additives can be appropriately blended in the underfill adhesive film of the present invention as necessary.
- other additives include flame retardants, silane coupling agents, and ion trapping agents.
- flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin.
- silane coupling agent include ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, and the like.
- the ion trapping agent include hydrotalcites and bismuth hydroxide.
- the underfill adhesive film of the present invention is produced, for example, as follows. First, the above-mentioned components, which are materials for forming an underfill adhesive film, are blended and dissolved or dispersed in a solvent (for example, methyl ethyl ketone, ethyl acetate, etc.) to prepare a coating solution. Next, after applying the prepared coating liquid on the base separator so as to have a predetermined thickness to form a coating film, the coating film is dried to form an underfill adhesive film.
- a solvent for example, methyl ethyl ketone, ethyl acetate, etc.
- the thickness of the underfill adhesive film of the present invention may be appropriately set in consideration of the gap between the semiconductor element and the adherend and the height of the connecting member.
- the thickness is preferably 10 to 100 ⁇ m.
- the adhesive film for underfill of the present invention has a temperature of 20000 Pa ⁇ s or less when the viscosity is measured at 40 to 100 ° C.
- a temperature of 20000 Pa ⁇ s or less When there is a temperature of 20000 Pa ⁇ s or less, the burying property with respect to the semiconductor element and the adherend is improved, and a semiconductor element without voids can be obtained.
- the temperature of 20000 Pa ⁇ s or less is the content of an epoxy resin having a number average molecular weight of 600 or less, the content of a phenol resin having a number average molecular weight exceeding 500, the type of elastomer, the content of the elastomer, the molecular weight of the elastomer, and the inorganic filling It can be controlled by the content of the agent.
- the minimum viscosity at 100 to 200 ° C. is preferably 100 Pa ⁇ s or more, and more preferably 500 Pa ⁇ s or more.
- production of the void by the outgas of a film can be suppressed as it is 100 Pa * s or more.
- the upper limit of the minimum viscosity at 100 to 200 ° C. is not particularly limited, but is preferably 10,000 Pa ⁇ s or less.
- corrugation of a to-be-adhered body improves that it is 10,000 Pa * s or less.
- the minimum viscosity at 100 to 200 ° C. can be controlled by the content of an epoxy resin having a number average molecular weight of 600 or less, the content of a phenol resin having a number average molecular weight exceeding 500, the content of an elastomer, the content of an inorganic filler, etc. .
- the minimum viscosity at 100 to 200 ° C. can be increased by increasing the elastomer content and increasing the inorganic filler content.
- the viscosity can be measured using a rheometer. Specifically, it can be measured by the method described in the examples.
- the adhesive film for underfill of the present invention is preferably protected by a separator.
- the separator has a function as a protective material that protects the underfill adhesive film until it is practically used.
- the separator is peeled off when the semiconductor element is stuck on the underfill adhesive film.
- As the separator it is also possible to use polyethylene terephthalate (PET), polyethylene, polypropylene, a plastic film or paper whose surface is coated with a release agent such as a fluorine release agent or a long-chain alkyl acrylate release agent.
- the semiconductor element include a semiconductor wafer, a semiconductor chip, and a semiconductor package.
- the adherend include a printed circuit board, a flexible substrate, an interposer, a semiconductor wafer, and a semiconductor element.
- solders such as tin-lead metal materials, tin-silver metal materials, tin-silver-copper metal materials, tin-zinc metal materials, tin-zinc-bismuth metal materials (Alloys), gold-based metal materials, copper-based metal materials, and the like.
- the material of the conductive material is not particularly limited as long as it is conductive, and examples thereof include copper.
- the underfill adhesive film of the present invention can be integrated with a back grinding tape or a dicing tape. Thereby, a semiconductor device can be manufactured efficiently.
- the back grinding tape-integrated underfill adhesive film of the present invention comprises a back grinding tape and the above-described underfill adhesive film.
- FIG. 1 is a schematic cross-sectional view of a back-grinding tape-integrated underfill adhesive film 10.
- the back-grinding tape-integrated underfill adhesive film 10 includes a back-grinding tape 1 and an underfill adhesive film 2.
- the back grinding tape 1 includes a substrate 1a and an adhesive layer 1b, and the adhesive layer 1b is provided on the substrate 1a.
- the underfill film 2 is provided on the pressure-sensitive adhesive layer 1b.
- the underfill adhesive film 2 does not have to be laminated on the entire surface of the back surface grinding tape 1 as shown in FIG. 1, and has a size sufficient for bonding to the semiconductor wafer 3 (see FIG. 2A). What is necessary is just to be provided.
- the back grinding tape 1 includes a substrate 1a and an adhesive layer 1b laminated on the substrate 1a.
- the base material 1a is a strength matrix of the back-grinding tape-integrated underfill adhesive film 10.
- polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolyprolene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenyls Fuido, aramid (paper), glass, glass cloth,
- the base material 1a can be used by appropriately selecting the same type or different types, and a blend of several types can be used as necessary. Conventional surface treatment can be applied to the surface of the substrate 1a. In order to impart antistatic ability to the base material 1a, a conductive material vapor deposition layer having a thickness of about 30 to 500 mm and made of metal, alloy, oxides thereof, or the like is provided on the base material 1a. it can.
- the substrate 1a may be a single layer or a multilayer of two or more.
- the thickness of the substrate 1a can be appropriately determined, and is generally about 5 ⁇ m to 200 ⁇ m, preferably 35 ⁇ m to 120 ⁇ m.
- the base material 1a may contain various additives (for example, a colorant, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, a flame retardant, etc.).
- additives for example, a colorant, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, a flame retardant, etc.
- the pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 1b is not particularly limited as long as it can hold the semiconductor wafer during the backside grinding of the semiconductor wafer and can be peeled off from the semiconductor wafer after the backside grinding.
- a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used.
- the pressure-sensitive adhesive is an acrylic pressure-sensitive adhesive based on an acrylic polymer from the standpoint of cleanability of semiconductor components such as semiconductor wafers and glass with organic solvents such as ultrapure water and alcohol. Is preferred.
- acrylic polymer examples include those using acrylic acid ester as a main monomer component.
- acrylic esters include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl
- the acrylic polymer includes units corresponding to the other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance, and the like. You may go out.
- Such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate;
- the Sulfonic acid groups such as lensulfonic acid, allylsulfonic acid, 2- (meth)
- a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary.
- polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) Examples include acrylates. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight
- the acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization.
- the polymerization can be carried out by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. From the viewpoint of preventing contamination of a clean adherend, it is preferable that the content of the low molecular weight substance is small. From this point, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3 million.
- an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer as a base polymer.
- the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent is added and reacted.
- a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent is added and reacted.
- the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. Generally, about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, is preferably added to 100 parts by weight of the base polymer.
- additives such as various conventionally known tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive, if necessary
- the pressure-sensitive adhesive layer 1b can be formed of a radiation curable pressure-sensitive adhesive.
- the radiation curable pressure-sensitive adhesive can increase the degree of cross-linking by irradiation with radiation such as ultraviolet rays, and can easily reduce its adhesive strength, and can be easily picked up. Examples of radiation include X-rays, ultraviolet rays, electron beams, ⁇ rays, ⁇ rays, and neutron rays.
- radiation curable pressure-sensitive adhesive those having a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation.
- radiation curable adhesives include additive radiation curable adhesives in which radiation curable monomer components and oligomer components are blended with general pressure sensitive adhesives such as the above acrylic adhesives and rubber adhesives. An agent can be illustrated.
- Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol.
- Examples thereof include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate and the like.
- the radiation curable oligomer component examples include urethane, polyether, polyester, polycarbonate, and polybutadiene oligomers, and those having a weight average molecular weight in the range of about 100 to 30000 are suitable.
- the compounding amount of the radiation curable monomer component or oligomer component can be appropriately determined in such an amount that the adhesive force of the pressure-sensitive adhesive layer can be reduced depending on the type of the pressure-sensitive adhesive layer. In general, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of a base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.
- the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond as a base polymer in the polymer side chain or main chain or at the main chain terminal.
- Intrinsic radiation curable adhesives using Intrinsic radiation-curable pressure-sensitive adhesives do not need to contain oligomer components, which are low-molecular components, or do not contain many, so the oligomer components do not move through the adhesive over time and are stable. This is preferable because an adhesive layer having a layered structure can be formed.
- the base polymer having a carbon-carbon double bond those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation.
- an acrylic polymer having a basic skeleton is preferable.
- the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.
- the method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted.
- the carbon-carbon double bond can be easily introduced into the polymer side chain for easy molecular design.
- a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation-curable carbon-carbon double bond. Examples of the method include condensation or addition reaction while maintaining the above.
- combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups.
- a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction.
- the functional group may be on either side of the acrylic polymer and the above compound as long as the acrylic polymer having the carbon-carbon double bond is generated by the combination of these functional groups. In the above preferred combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group.
- examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, and the like.
- acrylic polymer those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.
- a base polymer having a carbon-carbon double bond can be used alone, but the radiation-curable monomer does not deteriorate the characteristics.
- Components and oligomer components can also be blended.
- the radiation-curable oligomer component is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.
- the radiation curable pressure-sensitive adhesive preferably contains a photopolymerization initiator when cured by ultraviolet rays or the like.
- the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, ⁇ -hydroxy- ⁇ , ⁇ ′-dimethylacetophenone, 2-methyl-2-hydroxypropio ⁇ -ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthal
- oxygen air
- examples thereof include a method of coating the surface of the pressure-sensitive adhesive layer 1b with a separator, and a method of irradiating radiation such as ultraviolet rays in a nitrogen gas atmosphere.
- the pressure-sensitive adhesive layer 1b has various additives (for example, colorants, thickeners, extenders, fillers, tackifiers, plasticizers, anti-aging agents, antioxidants, surfactants, cross-linking agents, etc. ) May be included.
- additives for example, colorants, thickeners, extenders, fillers, tackifiers, plasticizers, anti-aging agents, antioxidants, surfactants, cross-linking agents, etc.
- the thickness of the pressure-sensitive adhesive layer 1b is not particularly limited, but is preferably about 1 to 50 ⁇ m from the viewpoint of preventing chipping on the chip cut surface and compatibility of fixing and holding the adhesive film 2 for underfill.
- the thickness is preferably 2 to 30 ⁇ m, more preferably 5 to 25 ⁇ m.
- the back grinding tape-integrated underfill adhesive film 10 can be produced, for example, by separately producing the back grinding tape 1 and the underfill adhesive film 2 and finally bonding them together.
- FIG. 2 is a diagram showing each step of a method of manufacturing a semiconductor device using the back-grinding tape-integrated underfill adhesive film 10. Specifically, in the manufacturing method of the semiconductor device, the circuit surface 3a on which the connection member 4 of the semiconductor wafer 3 is formed and the underfill adhesive film 2 of the backgrinding tape-integrated underfill adhesive film 10 are attached.
- Bonding process grinding process for grinding the back surface 3b of the semiconductor wafer 3, wafer fixing process for attaching the dicing tape 11 to the back surface 3b of the semiconductor wafer 3, peeling process for peeling the back surface grinding tape 1, dicing the semiconductor wafer 3
- a dicing step for forming the semiconductor chip 5 with the underfill adhesive film 2 a pickup step for peeling the semiconductor chip 5 with the underfill adhesive film 2 from the dicing tape 11, and the gap between the adherend 6 and the semiconductor chip 5.
- connection members 4 are formed on the circuit surface 3a of the semiconductor wafer 3 (see FIG. 2A).
- the height of the connecting member 4 is determined according to the application and is generally about 15 to 100 ⁇ m. Of course, the height of each connection member 4 in the semiconductor wafer 3 may be the same or different.
- the height X ( ⁇ m) of the connection member 4 formed on the surface of the semiconductor wafer 3 and the thickness Y ( ⁇ m) of the underfill adhesive film 2 satisfy the following relationship. 0.5 ⁇ Y / X ⁇ 2
- the height X ( ⁇ m) of the connection member 4 and the thickness Y ( ⁇ m) of the underfill adhesive film 2 satisfy the above relationship, the space between the semiconductor chip 5 and the adherend 6 is sufficiently filled. In addition, it is possible to prevent excessive protrusion of the underfill adhesive film 2 from the space, and to prevent contamination of the semiconductor chip 5 by the underfill adhesive film 2. In addition, when the height of each connection member 4 differs, the height of the highest connection member 4 is used as a reference.
- the separator arbitrarily provided on the underfill adhesive film 2 of the back-grinding tape-integrated underfill adhesive film 10 is appropriately peeled off, and as shown in FIG.
- the formed circuit surface 3a and the underfill adhesive film 2 are opposed to each other, and the underfill adhesive film 2 and the semiconductor wafer 3 are bonded together (mount).
- the method of bonding is not particularly limited, but a method by pressure bonding is preferable.
- the pressure for pressure bonding is preferably 0.1 MPa or more, more preferably 0.2 MPa or more. When the pressure is 0.1 MPa or more, the unevenness of the circuit surface 3a of the semiconductor wafer 3 can be satisfactorily embedded.
- the upper limit of the pressure for pressure bonding is not particularly limited, but is preferably 1 MPa or less, more preferably 0.5 MPa or less.
- the bonding temperature is preferably 60 ° C. or higher, more preferably 70 ° C. or higher. When the temperature is 60 ° C. or higher, the viscosity of the underfill adhesive film 2 is reduced, and the unevenness of the semiconductor wafer 3 can be filled without a gap. Further, the bonding temperature is preferably 100 ° C. or lower, more preferably 80 ° C. or lower. When it is 100 ° C. or lower, bonding can be performed while suppressing the curing reaction of the underfill adhesive film 2.
- Bonding is preferably performed under reduced pressure, for example, 1000 Pa or less, preferably 500 Pa or less.
- a minimum is not specifically limited, For example, it is 1 Pa or more.
- the surface (that is, the back surface) 3b opposite to the circuit surface 3a of the semiconductor wafer 3 is ground (see FIG. 2B).
- the thin processing machine used for back surface grinding of the semiconductor wafer 3 is not particularly limited, and examples thereof include a grinding machine (back grinder) and a polishing pad. Further, the back surface grinding may be performed by a chemical method such as etching. The back surface grinding is performed until the semiconductor wafer 3 has a desired thickness (for example, 700 to 25 ⁇ m).
- the dicing tape 11 is attached to the back surface 3b of the semiconductor wafer 3 (see FIG. 2C).
- the dicing tape 11 has a structure in which an adhesive layer 11b is laminated on a substrate 11a.
- the base material 11a and the pressure-sensitive adhesive layer 11b can be suitably prepared by using the components and the production methods shown in the paragraphs of the base material 1a and the pressure-sensitive adhesive layer 1b of the back grinding tape 1.
- the pressure sensitive adhesive layer 1b When the back surface grinding tape 1 is peeled off, if the pressure sensitive adhesive layer 1b has radiation curability, the pressure sensitive adhesive layer 1b is irradiated with radiation to harden the pressure sensitive adhesive layer 1b, so that the peeling is easily performed. Can do.
- the radiation dose may be set as appropriate in consideration of the type of radiation used and the degree of curing of the pressure-sensitive adhesive layer.
- ⁇ Dicing process> In the dicing process, as shown in FIG. 2E, the semiconductor wafer 5 and the underfill adhesive film 2 are diced to form the diced semiconductor chip 5 with the underfill adhesive film 2. Dicing is performed according to a conventional method from the circuit surface 3a to which the underfill adhesive film 2 of the semiconductor wafer 3 is bonded. For example, a cutting method called full cut that cuts up to the dicing tape 11 can be adopted. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used.
- the expansion can be performed using a conventionally known expanding apparatus.
- the semiconductor chip 5 with the underfill adhesive film 2 is peeled from the dicing tape 11 (the semiconductor chip 5 with the underfill adhesive film 2 is picked up).
- the pickup method is not particularly limited, and various conventionally known methods can be employed.
- the adhesive layer 11b of the dicing tape 11 is an ultraviolet curable type
- the pickup is performed after the adhesive layer 11b is irradiated with ultraviolet rays.
- the adhesive force with respect to the semiconductor chip 5 of the adhesive layer 11b falls, and peeling of the semiconductor chip 5 becomes easy.
- connection step the semiconductor chip 5 and the adherend 6 are electrically connected via the connection member 4 while filling the space between the adherend 6 and the semiconductor chip 5 with the underfill adhesive film 2 (FIG. 2G). Specifically, the conductive member 7 is melted while being pressed by bringing the connecting member 4 formed on the semiconductor chip 5 into contact with the conductive member 7 for bonding attached to the connection pad of the adherend 6. Thus, the semiconductor chip 5 and the adherend 6 are electrically connected. Since the underfill adhesive film 2 is attached to the circuit surface 3 a of the semiconductor chip 5, the electrical connection between the semiconductor chip 5 and the adherend 6 and at the same time between the semiconductor chip 5 and the adherend 6 are performed. Is filled with the underfill adhesive film 2.
- the heating conditions in the connecting step are not particularly limited, but usually the heating conditions are 100 to 300 ° C., and the pressurizing conditions are 0.5 to 500 N.
- thermocompression-bonding process in a connection process in multistep.
- thermocompression treatment in multiple stages, the resin between the connection member 4 and the conductive material 7 can be efficiently removed, and a better metal-to-metal bond can be obtained.
- the underfill adhesive film 2 is cured by heating. Thereby, the connection reliability between the semiconductor chip 5 and the adherend 6 can be ensured.
- the heating temperature for curing the underfill adhesive film 2 is not particularly limited, and is, for example, 150 to 200 ° C. for 10 to 120 minutes.
- the underfill adhesive film may be cured by heat treatment in the connection step.
- a sealing process may be performed to protect the entire semiconductor device 30 including the mounted semiconductor chip 5.
- the sealing step is performed using a sealing resin.
- the sealing conditions at this time are not particularly limited.
- the sealing resin is thermally cured by heating at 175 ° C. for 60 seconds to 90 seconds, but the present invention is not limited to this. For example, it can be cured at 165 ° C. to 185 ° C. for several minutes.
- an insulating resin (insulating resin) is preferable, and it can be appropriately selected from known sealing resins.
- the semiconductor chip 5 and the adherend 6 are electrically connected via a connection member 4 formed on the semiconductor chip 5 and a conductive material 7 provided on the adherend 6. .
- An underfill adhesive film 2 is disposed between the semiconductor chip 5 and the adherend 6 so as to fill the space.
- the dicing tape-integrated underfill adhesive film of the present invention includes a dicing tape and the above-described underfill adhesive film.
- FIG. 3 is a schematic cross-sectional view of the dicing tape-integrated underfill adhesive film 50.
- the dicing tape-integrated underfill adhesive film 50 includes a dicing tape 41 and an underfill adhesive film 42.
- the dicing tape 41 includes a base material 41a and an adhesive layer 41b, and the adhesive layer 41b is provided on the base material 41a.
- the underfill film 42 is provided on the adhesive layer 41b.
- the underfill adhesive film 42 does not have to be laminated on the entire surface of the dicing tape 41 as shown in FIG. 3 and is provided in a size sufficient for bonding to the semiconductor wafer 43 (see FIG. 4A). It only has to be.
- the dicing tape 41 includes a base material 41a and an adhesive layer 41b laminated on the base material 41a.
- the substrate 41a those exemplified for the substrate 1a can be used.
- the adhesive layer 41b those exemplified for the adhesive layer 1b can be used.
- FIG. 4 is a diagram showing each step of a method of manufacturing a semiconductor device using the dicing tape-integrated underfill adhesive film 50. Specifically, in the method for manufacturing the semiconductor device, the semiconductor wafer 43 on which both circuit surfaces having the connection members 44 are formed and the underfill adhesive film 42 of the dicing tape-integrated underfill adhesive film 50 are attached.
- a curing step of curing the film 42 is included.
- the semiconductor wafer 43 having the circuit surface having the connection member 44 formed on both sides and the underfill adhesive film 42 of the dicing tape-integrated underfill adhesive film 50 are bonded together.
- the semiconductor wafer 43 since the strength of the semiconductor wafer 43 is weak, the semiconductor wafer 43 may be fixed to a support such as support glass for reinforcement (not shown). In this case, after bonding the semiconductor wafer 43 and the underfill adhesive film 42, a step of peeling the support may be included. Which circuit surface of the semiconductor wafer 43 and the underfill adhesive film 42 are bonded together may be changed according to the structure of the target semiconductor device.
- connection members 44 on both surfaces of the semiconductor wafer 43 may be electrically connected or may not be connected. Examples of the electrical connection between the connection members 44 include a connection through a via called a TSV format.
- the bonding conditions the conditions exemplified in the bonding process of the back-grinding tape-integrated underfill adhesive film 10 can be employed.
- the semiconductor wafer 43 and the underfill adhesive film 42 are diced to form semiconductor chips 45 with the underfill adhesive film 42 (see FIG. 4B).
- the dicing conditions the conditions exemplified in the dicing process of the back-grinding tape-integrated underfill adhesive film 10 can be employed.
- the semiconductor chip 45 with the underfill adhesive film 42 is peeled from the dicing tape 41 (FIG. 4C).
- the pickup conditions the conditions exemplified in the pickup process of the back-grinding tape-integrated underfill adhesive film 10 can be employed.
- connection step the semiconductor chip 45 and the adherend 46 are electrically connected via the connecting member 44 while the space between the adherend 46 and the semiconductor chip 45 is filled with the underfill adhesive film 42 (FIG. 4D).
- the specific connection method is the same as that described in the connection step of the back-grinding tape-integrated underfill adhesive film 10.
- the heating conditions for the connecting step the conditions exemplified for the back-grinding tape-integrated underfill adhesive film 10 can be employed.
- the curing process and the sealing process are the same as those described in the curing process and the sealing process of the back-grinding tape-integrated underfill adhesive film 10. Thereby, the semiconductor device 60 can be manufactured.
- Acrylic resin Paraclone W-197CM manufactured by Negami Kogyo Co., Ltd. (acrylate polymer based on ethyl acrylate-methyl methacrylate, Mw: 400,000)
- Epoxy resin 1 jER1004 manufactured by Mitsubishi Chemical Corporation (bisphenol A type epoxy resin, Mn: 1650, epoxy equivalent: 875 to 975 g / eq)
- Epoxy resin 2 jER828 manufactured by Mitsubishi Chemical Corporation (bisphenol A type epoxy resin, Mn: 370, epoxy equivalent: 184 to 194 g / eq)
- Phenol resin 1 MEH-7851SS manufactured by Meiwa Kasei Co., Ltd.
- Phenol resin 2 MEH-7851-4H manufactured by Meiwa Kasei Co., Ltd.
- Phenol resin 3 MEH-7500 manufactured by Meiwa Kasei Co., Ltd.
- silica (trade name “SO-25R”, average particle size: 500 nm (0.5 ⁇ m), manufactured by Admatechs Co., Ltd.)
- Organic acid Orthoanisic acid manufactured by Tokyo Chemical Industry Co., Ltd.
- Imidazole catalyst 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Kasei Co., Ltd.
- the adhesive composition solution was applied on a release film made of a polyethylene terephthalate film having a thickness of 50 ⁇ m after silicone release treatment, and then dried at 130 ° C. for 2 minutes, whereby an adhesive film having a thickness of 45 ⁇ m was obtained.
- a release film made of a polyethylene terephthalate film having a thickness of 50 ⁇ m after silicone release treatment was then dried at 130 ° C. for 2 minutes, whereby an adhesive film having a thickness of 45 ⁇ m was obtained.
- the adhesive film is thermally cured by heat treatment at 175 ° C. for 1 hour, and then cut into a strip shape having a thickness of 200 ⁇ m, a length of 40 mm (measurement length), and a width of 10 mm with a cutter knife, and a solid viscoelasticity measuring apparatus (RSAIII , Manufactured by Rheometric Scientific Co., Ltd.), the storage elastic modulus and loss elastic modulus at ⁇ 50 to 300 ° C. were measured.
- the measurement conditions were a frequency of 1 Hz and a heating rate of 10 ° C./min.
- the glass transition temperature was obtained by calculating the value of tan ⁇ (G ′′ (loss elastic modulus) / G ′ (storage elastic modulus)).
- the measurement of the minimum melt viscosity of the adhesive film is a value measured by a parallel plate method using a rheometer (manufactured by HAAKE, RS-1). More specifically, the melt viscosity is measured in the range of 40 ° C. to 200 ° C. under the conditions of a gap of 100 ⁇ m, a rotating plate diameter of 20 mm, a rotating speed of 5 s ⁇ 1 and a heating rate of 10 ° C./min.
- the minimum melt viscosity in the range of 40 ° C. to 100 ° C. and in the range of 100 ° C. to 200 ° C. was defined as the minimum melt viscosity in each temperature range.
- Dicing machine Product name “DFD-6361” manufactured by Disco Corporation Dicing ring: “2-8-1” (manufactured by Disco Corporation) Dicing speed: 30mm / sec Dicing blade: Z1; "203O-SE 27HCDD” manufactured by DISCO Z2: “203O-SE 27HCBB” manufactured by Disco Corporation Dicing blade rotation speed: Z1; 40,000 rpm Z2; 45,000 rpm Cut method: Step cut Wafer chip size: 7.3mm square
- the laminated body (semiconductor chip with an adhesive film) of an adhesive film and a semiconductor chip with a single-sided bump was picked up by a push-up method using a needle from the substrate side of the dicing tape.
- the semiconductor chip was mounted on the BGA substrate by thermocompression bonding.
- the mounting conditions are as follows. The processing was performed under mounting conditions 1 and then the processing was performed under mounting conditions 2. As a result, a semiconductor package in which the semiconductor chip was mounted on the BGA substrate was obtained.
Abstract
Description
本発明はまた、前記裏面研削用テープ一体型アンダーフィル用接着フィルムを用いて作製した半導体装置に関する。
本発明はまた、ダイシングテープ一体型アンダーフィル用接着フィルムを用いて作製した半導体装置に関する。
本発明のアンダーフィル用接着フィルムは、数平均分子量が600以下のエポキシ樹脂、数平均分子量が500を超えるフェノール樹脂、及びエラストマーを含む樹脂成分を含む。
い。
(式中、nは整数を表す。)
なお、平均粒子径は、光度式の粒度分布計(HORIBA製、装置名;LA-910)により求めた値である。
本発明の裏面研削用テープ一体型アンダーフィル用接着フィルムは、裏面研削用テープと、前述のアンダーフィル用接着フィルムとを備える。
なお、アンダーフィル用接着フィルム2は、図1に示したように裏面研削用テープ1の全面に積層されていなくてもよく、半導体ウェハ3(図2A参照)との貼り合わせに十分なサイズで設けられていればよい。
裏面研削用テープ1は、基材1aと、基材1a上に積層された粘着剤層1bとを備えている。
裏面研削用テープ一体型アンダーフィル用接着フィルム10は、例えば裏面研削用テープ1及びアンダーフィル用接着フィルム2を別々に作製しておき、最後にこれらを貼り合わせることにより作成することができる。
次に、裏面研削用テープ一体型アンダーフィル用接着フィルム10を用いる半導体装置の製造方法について説明する。図2は、裏面研削用テープ一体型アンダーフィル用接着フィルム10を用いる半導体装置の製造方法の各工程を示す図である。
具体的には、当該半導体装置の製造方法は、半導体ウェハ3の接続部材4が形成された回路面3aと裏面研削用テープ一体型アンダーフィル用接着フィルム10のアンダーフィル用接着フィルム2とを貼り合わせる貼合せ工程、半導体ウェハ3の裏面3bを研削する研削工程、半導体ウェハ3の裏面3bにダイシングテープ11を貼りつけるウェハ固定工程、裏面研削用テープ1を剥離する剥離工程、半導体ウェハ3をダイシングしてアンダーフィル用接着フィルム2付き半導体チップ5を形成するダイシング工程、及びアンダーフィル用接着フィルム2付き半導体チップ5をダイシングテープ11から剥離するピックアップ工程、被着体6と半導体チップ5の間の空間をアンダーフィル用接着フィルム2で充填しつつ接続部材4を介して半導体チップ5と被着体6とを電気的に接続する接続工程、及びアンダーフィル用接着フィルム2を硬化させる硬化工程を含む。
貼合せ工程では、半導体ウェハ3の接続部材4が形成された回路面3aと裏面研削用テープ一体型アンダーフィル用接着フィルム10のアンダーフィル用接着フィルム2とを貼り合わせる(図2A参照)。
0.5≦Y/X≦2
研削工程では、半導体ウェハ3の回路面3aとは反対側の面(すなわち、裏面)3bを研削する(図2B参照)。半導体ウェハ3の裏面研削に用いる薄型加工機としては特に限定されず、例えば研削機(バックグラインダー)、研磨パッドなどを例示できる。また、エッチングなどの化学的方法にて裏面研削を行ってもよい。裏面研削は、半導体ウェハ3が所望の厚さ(例えば、700~25μm)になるまで行われる。
研削工程後、半導体ウェハ3の裏面3bにダイシングテープ11を貼りつける(図2C参照)。なお、ダイシングテープ11は、基材11a上に粘着剤層11bが積層された構造を有する。基材11a及び粘着剤層11bとしては、裏面研削用テープ1の基材1a及び粘着剤層1bの項で示した成分及び製法を用いて好適に作製することができる。
次いで、裏面研削用テープ1を剥離する(図2D参照)。これにより、アンダーフィル用接着フィルム2が露出した状態となる。
ダイシング工程では、図2Eに示すように半導体ウェハ3及びアンダーフィル用接着フィルム2をダイシングしてダイシングされたアンダーフィル用接着フィルム2付き半導体チップ5を形成する。ダイシングは、半導体ウェハ3のアンダーフィル用接着フィルム2を貼り合わせた回路面3aから常法に従い行われる。例えば、ダイシングテープ11まで切込みを行うフルカットと呼ばれる切断方式などを採用できる。本工程で用いるダイシング装置としては特に限定されず、従来公知のものを用いることができる。
図2Fに示すように、アンダーフィル用接着フィルム2付き半導体チップ5をダイシングテープ11から剥離する(アンダーフィル用接着フィルム2付き半導体チップ5をピックアップする)。ピックアップの方法としては特に限定されず、従来公知の種々の方法を採用できる。
接続工程では、被着体6と半導体チップ5の間の空間をアンダーフィル用接着フィルム2で充填しつつ接続部材4を介して半導体チップ5と被着体6とを電気的に接続する(図2G参照)。具体的には、半導体チップ5に形成されている接続部材4を、被着体6の接続パッドに被着された接合用の導電材7に接触させて押圧しながら導電材7を溶融させることにより、半導体チップ5と被着体6とを電気的に接続する。半導体チップ5の回路面3aにはアンダーフィル用接着フィルム2が貼り付けられているので、半導体チップ5と被着体6との電気的接続と同時に、半導体チップ5と被着体6との間の空間がアンダーフィル用接着フィルム2により充填されることになる。
半導体チップ5と被着体6との電気的接続を行った後は、アンダーフィル用接着フィルム2を加熱により硬化させる。これにより、半導体チップ5と被着体6との間の接続信頼性を確保できる。アンダーフィル用接着フィルム2の硬化のための加熱温度としては特に限定されず、例えば、150~200℃で10~120分間である。なお、接続工程における加熱処理によりアンダーフィル用接着フィルムを硬化させてもよい。
次に、実装された半導体チップ5を備える半導体装置30全体を保護するために封止工程を行ってもよい。封止工程は、封止樹脂を用いて行われる。このときの封止条件としては特に限定されないが、通常、175℃で60秒間~90秒間の加熱を行うことにより、封止樹脂の熱硬化が行われるが、本発明はこれに限定されず、例えば165℃~185℃で、数分間キュアすることができる。
半導体装置30では、半導体チップ5と被着体6とが、半導体チップ5上に形成された接続部材4及び被着体6上に設けられた導電材7を介して電気的に接続されている。また、半導体チップ5と被着体6との間には、その空間を充填するようにアンダーフィル用接着フィルム2が配置されている。
本発明のダイシングテープ一体型アンダーフィル用接着フィルムは、ダイシングテープと、前述のアンダーフィル用接着フィルムとを備える。
ダイシングテープ41は基材41a及び粘着剤層41bを備え、粘着剤層41bは基材41a上に設けられている。アンダーフィルフィルム42は粘着剤層41b上に設けられている。
なお、アンダーフィル用接着フィルム42は、図3に示したようにダイシングテープ41の全面に積層されていなくてもよく、半導体ウェハ43(図4A参照)との貼り合わせに十分なサイズで設けられていればよい。
次に、ダイシングテープ一体型アンダーフィル用接着フィルム50を用いる半導体装置の製造方法について説明する。図4は、ダイシングテープ一体型アンダーフィル用接着フィルム50を用いる半導体装置の製造方法の各工程を示す図である。具体的には、当該半導体装置の製造方法は、接続部材44を有する回路面が両面に形成された半導体ウェハ43とダイシングテープ一体型アンダーフィル用接着フィルム50のアンダーフィル用接着フィルム42とを貼り合わせる貼合せ工程、半導体ウェハ43をダイシングしてアンダーフィル用接着フィルム42付き半導体チップ45を形成するダイシング工程、アンダーフィル用接着フィルム42付き半導体チップ45をダイシングテープ41から剥離するピックアップ工程、被着体46と半導体チップ45の間の空間をアンダーフィル用接着フィルム42で充填しつつ接続部材44を介して半導体チップ45と被着体46とを電気的に接続する接続工程、及びアンダーフィル用接着フィルム42を硬化させる硬化工程を含む。
貼合せ工程では、図4Aに示すように、接続部材44を有する回路面が両面に形成された半導体ウェハ43とダイシングテープ一体型アンダーフィル用接着フィルム50のアンダーフィル用接着フィルム42とを貼り合わせる。なお、通常、半導体ウェハ43の強度は弱いことから、補強のために半導体ウェハ43をサポートガラスなどの支持体に固定することがある(図示せず)。この場合は、半導体ウェハ43とアンダーフィル用接着フィルム42との貼り合わせ後に、支持体を剥離する工程を含んでいてもよい。半導体ウェハ43のいずれの回路面とアンダーフィル用接着フィルム42とを貼り合わせるかは、目的とする半導体装置の構造に応じて変更すればよい。
ダイシング工程では、半導体ウェハ43及びアンダーフィル用接着フィルム42をダイシングしてアンダーフィル用接着フィルム42付き半導体チップ45を形成する(図4B参照)。ダイシング条件としては、裏面研削用テープ一体型アンダーフィル用接着フィルム10のダイシング工程で例示した条件を採用できる。
ピックアップ工程では、アンダーフィル用接着フィルム42付き半導体チップ45をダイシングテープ41から剥離する(図4C)。
ピックアップ条件としては、裏面研削用テープ一体型アンダーフィル用接着フィルム10のピックアップ工程で例示した条件を採用できる。
接続工程では、被着体46と半導体チップ45の間の空間をアンダーフィル用接着フィルム42で充填しつつ接続部材44を介して半導体チップ45と被着体46とを電気的に接続する(図4D参照)。具体的な接続方法は、裏面研削用テープ一体型アンダーフィル用接着フィルム10の接続工程で説明した内容と同様である。接続工程の加熱条件としては、裏面研削用テープ一体型アンダーフィル用接着フィルム10で例示した条件を採用できる。
硬化工程及び封止工程は、裏面研削用テープ一体型アンダーフィル用接着フィルム10の硬化工程及び封止工程で説明した内容と同様である。これにより、半導体装置60を製造することができる。
アクリル樹脂:根上工業株式会社製のパラクロンW-197CM(アクリル酸エチル-メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー、Mw:400000)
エポキシ樹脂1:三菱化学株式会社製のjER1004(ビスフェノールA型エポキシ樹脂、Mn:1650、エポキシ当量:875~975g/eq)
エポキシ樹脂2:三菱化学株式会社製のjER828(ビスフェノールA型エポキシ樹脂、Mn:370、エポキシ当量:184~194g/eq)
フェノール樹脂1:明和化成株式会社製のMEH-7851SS(式(I)で表される骨格を含む樹脂、Mn:550、水酸基当量:202g/eq)
フェノール樹脂2:明和化成株式会社製のMEH-7851-4H(式(I)で表される骨格を含む樹脂、Mn:1230、水酸基当量:242g/eq)
フェノール樹脂3:明和化成株式会社製のMEH-7500(トリフェニルメタン型フェノール樹脂、Mn:490、水酸基当量:97g/eq)
シリカフィラー:球状シリカ(商品名「SO-25R」、平均粒子径:500nm(0.5μm)、株式会社アドマテックス製)
有機酸:東京化成株式会社製のオルトアニス酸
イミダゾール触媒:四国化成株式会社製の2PHZ-PW(2-フェニル-4,5-ジヒドロキシメチルイミダゾール)
表1に示す配合比に従い、各成分をメチルエチルケトンに溶解して、固形分濃度が23.6重量%となる接着剤組成物の溶液を調製した。
厚さ45μmの接着フィルムを長さ3m、幅330mmにスリットし、3インチ径のポリプロピレン製の巻き芯に巻きつけたときに、接着フィルムに割れが生じない場合を○と評価し、割れが生じた場合を×と評価した。
まず、接着フィルムを175℃で1時間の加熱処理により熱硬化させ、その後厚さ200μm、長さ40mm(測定長さ)、幅10mmの短冊状にカッターナイフで切り出し、固体粘弾性測定装置(RSAIII、レオメトリックサイエンティフィック(株)製)を用いて、-50~300℃における貯蔵弾性率及び損失弾性率を測定した。測定条件は、周波数1Hz、昇温速度10℃/minとした。さらに、tanδ(G’’(損失弾性率)/G’(貯蔵弾性率))の値を算出することによりガラス転移温度を得た。
接着フィルムの最低溶融粘度の測定は、レオメーター(HAAKE社製、RS-1)を用いて、パラレルプレート法により測定した値である。より詳細には、ギャップ100μm、回転プレート直径20mm、回転速度5s-1、昇温速度10℃/分の条件にて、40℃から200℃の範囲で溶融粘度を測定し、その際に得られる40℃~100℃の範囲、及び100℃~200℃の範囲での溶融粘度の最低値をそれぞれの温度範囲での最低溶融粘度とした。
(1)ダイシングテープ一体型接着フィルムの作製
接着フィルムを、ダイシングテープ(商品名「V-8-T」日東電工株式会社製)の粘着剤層上に、ハンドローラーを用いて貼り合せ、ダイシングテープ一体型接着フィルムを作製した。
(2)半導体パッケージの作製
片面にバンプが形成されている片面バンプ付き半導体ウェハを用意し、この片面バンプ付き半導体ウェハのバンプ形成面に、ダイシングテープ一体型接着フィルムを貼り付けた。片面バンプ付き半導体ウェハとしては、以下のものを用いた。また、貼り付け条件は以下の通りである。アンダーフィル材の厚さY(=45μm)の接続部材の高さX(=45μm)に対する比(Y/X)は、1であった。
半導体ウェハの直径:8インチ
半導体ウェハの厚さ:0.2mm(研削装置「DFG-8560 ディスコ株式会社製」を用いて0.7mmから0.2mmに裏面研削したもの)
バンプの高さ:45μm
バンプのピッチ:50μm
・貼り付け条件
貼り付け装置:商品名「DSA840-WS」日東精機株式会社製
貼り付け速度:5mm/min
貼り付け圧力:0.25MPa
貼り付け時のステージ温度:80℃
貼り付け時の真空度:150Pa
・ダイシング条件
ダイシング装置:商品名「DFD-6361」ディスコ社製
ダイシングリング:「2-8-1」(ディスコ社製)
ダイシング速度:30mm/sec
ダイシングブレード:
Z1;ディスコ社製「203O-SE 27HCDD」
Z2;ディスコ社製「203O-SE 27HCBB」
ダイシングブレード回転数:
Z1;40,000rpm
Z2;45,000rpm
カット方式:ステップカット
ウェハチップサイズ:7.3mm角
次いで、半導体チップのバンプ形成面とBGA基板とを対向させた状態で、半導体チップをBGA基板に熱圧着して半導体チップの実装を行った。なお、実装条件は以下の通りであり、実装条件1で処理した後、実装条件2で処理した。これにより、半導体チップがBGA基板に実装された半導体パッケージを得た。
熱圧着装置:商品名「FCB-3」パナソニック製
加熱温度:150℃
荷重:10kg
保持時間:10秒
・実装条件2
熱圧着装置:商品名「FCB-3」パナソニック製
加熱温度:260℃
荷重:10kg
保持時間:10秒
以上の方法により、実施例及び比較例に係る半導体パッケージを各10サンプル作成し、-55℃~125℃を30分で1サイクルする熱サイクルを500サイクル繰り返した後、半導体パッケージを包埋用エポキシ樹脂で包埋した。次いで、半導体パッケージをはんだ接合部が露出するように基板に垂直な方向で切断し、露出したはんだ接合部の断面を研磨した。その後、研磨したはんだ接合部の断面を光学顕微鏡(倍率:1000倍)により観察し、はんだ接合部が破断していない場合を「○」、はんだ接合部が1サンプルでも破断していた場合を「×」として評価した。結果を表1に示す。
一方、エポキシ樹脂2を配合しなかった比較例2(実施例1のエポキシ樹脂2に代えてエポキシ樹脂1を配合した例)では、熱的信頼性が良好であったものの、可とう性が劣っていた。また、分子量が小さいフェノール樹脂3を配合した比較例1では、可とう性が良好であるものの、熱的信頼性が劣っていた。
1a 基材
1b 粘着剤層
2 アンダーフィル用接着フィルム
3 半導体ウェハ
3a 半導体ウェハの回路面
3b 半導体ウェハの回路面とは反対側の面
4 接続部材(バンプ)
5 半導体チップ
6 被着体
7 導通材
10 裏面研削用テープ一体型アンダーフィル用接着フィルム
11 ダイシングテープ
11a 基材
11b 粘着剤層
30 半導体装置
41 ダイシングテープ
41a 基材
41b 粘着剤層
42 アンダーフィル用接着フィルム
43 半導体ウェハ
44 接続部材(バンプ)
45 半導体チップ
46 被着体
47 導通材
50 ダイシングテープ一体型アンダーフィル用接着フィルム
60 半導体装置
Claims (13)
- 数平均分子量が600以下のエポキシ樹脂、数平均分子量が500を超えるフェノール樹脂、及びエラストマーを含む樹脂成分を含み、
前記樹脂成分中の前記エポキシ樹脂の含有量が5~50重量%であり、前記フェノール樹脂の含有量が5~50重量%であるアンダーフィル用接着フィルム。 - 前記フェノール樹脂の水酸基当量が200g/eq以上である請求項1に記載のアンダーフィル用接着フィルム。
- 前記エポキシ樹脂が、ビスフェノールA型エポキシ樹脂又はビスフェノールF型エポキシ樹脂である請求項1~3のいずれかに記載のアンダーフィル用接着フィルム。
- 前記樹脂成分中の前記エラストマーの含有量が10~40重量%である請求項1~4のいずれかに記載のアンダーフィル用接着フィルム。
- 前記エラストマーがアクリル樹脂である請求項1~5のいずれかに記載のアンダーフィル用接着フィルム。
- 40~100℃において粘度を測定した場合に、20000Pa・s以下となる温度があり、
100~200℃における最低粘度が100Pa・s以上である請求項1~6のいずれかに記載のアンダーフィル用接着フィルム。 - 前記アンダーフィル用接着フィルム中に無機充填剤を30~70重量%含む請求項1~7のいずれかに記載のアンダーフィル用接着フィルム。
- 請求項1~8のいずれかに記載のアンダーフィル用接着フィルム及び裏面研削用テープを備え、
前記裏面研削用テープ上に前記アンダーフィル用接着フィルムが設けられている裏面研削用テープ一体型アンダーフィル用接着フィルム。 - 請求項1~8のいずれかに記載のアンダーフィル用接着フィルム及びダイシングテープを備え、
前記ダイシングテープ上に前記アンダーフィル用接着フィルムが設けられているダイシングテープ一体型アンダーフィル用接着フィルム。 - 請求項1~8のいずれかに記載のアンダーフィル用接着フィルムを用いて作製した半導体装置。
- 請求項9に記載の裏面研削用テープ一体型アンダーフィル用接着フィルムを用いて作製した半導体装置。
- 請求項10に記載のダイシングテープ一体型アンダーフィル用接着フィルムを用いて作製した半導体装置。
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US14/782,292 US20160040045A1 (en) | 2013-04-04 | 2014-03-27 | Adhesive film for underfill, adhesive film for underfill integrated with tape for grinding rear surface, adhesive film for underfill integrated with dicing tape, and semiconductor device |
KR1020157030387A KR20150140697A (ko) | 2013-04-04 | 2014-03-27 | 언더필용 접착 필름, 이면 연삭용 테이프 일체형 언더필용 접착 필름, 다이싱 테이프 일체형 언더필용 접착 필름 및 반도체 장치 |
CN201480020067.XA CN105103280A (zh) | 2013-04-04 | 2014-03-27 | 底部填充用粘接膜、背面研削用胶带一体型底部填充用粘接膜、切割胶带一体型底部填充用粘接膜以及半导体装置 |
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JP2013078872A JP2014203964A (ja) | 2013-04-04 | 2013-04-04 | アンダーフィル用接着フィルム、裏面研削用テープ一体型アンダーフィル用接着フィルム、ダイシングテープ一体型アンダーフィル用接着フィルム及び半導体装置 |
JP2013-078872 | 2013-04-04 |
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WO2014162974A1 true WO2014162974A1 (ja) | 2014-10-09 |
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PCT/JP2014/058851 WO2014162974A1 (ja) | 2013-04-04 | 2014-03-27 | アンダーフィル用接着フィルム、裏面研削用テープ一体型アンダーフィル用接着フィルム、ダイシングテープ一体型アンダーフィル用接着フィルム及び半導体装置 |
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US (1) | US20160040045A1 (ja) |
JP (1) | JP2014203964A (ja) |
KR (1) | KR20150140697A (ja) |
CN (1) | CN105103280A (ja) |
TW (1) | TW201446923A (ja) |
WO (1) | WO2014162974A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US20160075871A1 (en) * | 2013-04-19 | 2016-03-17 | Nitto Denko Corporation | Thermosetting resin composition and method for producing a semiconductor device |
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KR102335771B1 (ko) * | 2014-12-01 | 2021-12-06 | 삼성전자주식회사 | 열전도 필름을 가진 반도체 패키지 |
KR102213777B1 (ko) * | 2018-02-02 | 2021-02-08 | 주식회사 엘지화학 | 반도체용 접착 필름 |
WO2020013042A1 (ja) * | 2018-07-09 | 2020-01-16 | 井前工業株式会社 | 高温用断熱材及びその三次元成形体の製造方法 |
WO2020262585A1 (ja) | 2019-06-28 | 2020-12-30 | 三菱瓦斯化学株式会社 | 樹脂組成物、樹脂シート、積層体、樹脂組成物層付き半導体ウェハ、樹脂組成物層付き半導体搭載用基板、及び半導体装置 |
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- 2013-04-04 JP JP2013078872A patent/JP2014203964A/ja active Pending
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- 2014-03-27 US US14/782,292 patent/US20160040045A1/en not_active Abandoned
- 2014-03-27 WO PCT/JP2014/058851 patent/WO2014162974A1/ja active Application Filing
- 2014-03-27 KR KR1020157030387A patent/KR20150140697A/ko not_active Application Discontinuation
- 2014-04-03 TW TW103112613A patent/TW201446923A/zh unknown
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Also Published As
Publication number | Publication date |
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CN105103280A (zh) | 2015-11-25 |
US20160040045A1 (en) | 2016-02-11 |
TW201446923A (zh) | 2014-12-16 |
JP2014203964A (ja) | 2014-10-27 |
KR20150140697A (ko) | 2015-12-16 |
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