JP6222941B2 - アンダーフィルシート、裏面研削用テープ一体型アンダーフィルシート、ダイシングテープ一体型アンダーフィルシート及び半導体装置の製造方法 - Google Patents
アンダーフィルシート、裏面研削用テープ一体型アンダーフィルシート、ダイシングテープ一体型アンダーフィルシート及び半導体装置の製造方法 Download PDFInfo
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Description
E’×α<250000[Pa/K] ・・・(1)
10000<E’×α<250000[Pa/K] ・・・(2)
本発明のアンダーフィルシートは、150℃、0.05〜0.20回転/分における粘度が1000Pa・s以上であり、好ましくは2000Pa・s以上である。1000Pa・s以上であるので、加圧の際にはみ出した樹脂による加圧装置の汚染を防止できる。
E’×α<250000[Pa/K] ・・・(1)
10000<E’×α<250000[Pa/K] ・・・(2)
なお、平均粒子径は、光度式の粒度分布計(HORIBA製、装置名;LA−910)により求めた値である。
本発明の裏面研削用テープ一体型アンダーフィルシートは、裏面研削用テープと、前述のアンダーフィルシートとを備える。
裏面研削用テープ1は、基材1aと、基材1a上に積層された粘着剤層1bとを備えている。なお、アンダーフィルシート2は、粘着剤層1b上に積層されている。
裏面研削用テープ一体型アンダーフィルシート10は、例えば裏面研削用テープ1及びアンダーフィルシート2を別々に作製しておき、最後にこれらを貼り合わせることにより作成することができる。
次に、裏面研削用テープ一体型アンダーフィルシート10を用いる半導体装置の製造方法について説明する。図2は、裏面研削用テープ一体型アンダーフィルシート10を用いる半導体装置の製造方法の各工程を示す図である。
具体的には、当該半導体装置の製造方法は、半導体ウェハ3の接続部材4が形成された回路面3aと裏面研削用テープ一体型アンダーフィルシート10のアンダーフィルシート2とを貼り合わせる貼合せ工程、半導体ウェハ3の裏面3bを研削する研削工程、半導体ウェハ3の裏面3bにダイシングテープ11を貼りつけるウェハ固定工程、裏面研削用テープ1を剥離する剥離工程、半導体ウェハ3をダイシングしてアンダーフィルシート2付きの半導体チップ5を形成するダイシング工程、及びアンダーフィルシート2付きの半導体チップ5をダイシングテープ11から剥離するピックアップ工程、被着体6と半導体チップ5の間の空間をアンダーフィルシート2で充填しつつ接続部材4を介して半導体チップ5と被着体6とを電気的に接続する接続工程、及びアンダーフィルシート2を硬化させる硬化工程を含む。
貼合せ工程では、半導体ウェハ3の接続部材4が形成された回路面3aと裏面研削用テープ一体型アンダーフィルシート10のアンダーフィルシート2とを貼り合わせる(図2A参照)。
0.5≦Y/X≦2
研削工程では、半導体ウェハ3の回路面3aとは反対側の面(すなわち、裏面)3bを研削する(図2B参照)。半導体ウェハ3の裏面研削に用いる薄型加工機としては特に限定されず、例えば研削機(バックグラインダー)、研磨パッド等を例示できる。また、エッチング等の化学的方法にて裏面研削を行ってもよい。裏面研削は、半導体ウェハ3が所望の厚さ(例えば、700〜25μm)になるまで行われる。
研削工程後、半導体ウェハ3の裏面3bにダイシングテープ11を貼りつける(図2C参照)。なお、ダイシングテープ11は、基材11a上に粘着剤層11bが積層された構造を有する。基材11a及び粘着剤層11bとしては、裏面研削用テープ1の基材1a及び粘着剤層1bの項で示した成分及び製法を用いて好適に作製することができる。
次いで、裏面研削用テープ1を剥離する(図2D参照)。これにより、アンダーフィルシート2が露出した状態となる。
ダイシング工程では、図2Eに示すように半導体ウェハ3及びアンダーフィルシート2をダイシングしてダイシングされたアンダーフィルシート2付きの半導体チップ5を形成する。ダイシングは、半導体ウェハ3のアンダーフィルシート2を貼り合わせた回路面3aから常法に従い行われる。例えば、ダイシングテープ11まで切込みを行うフルカットと呼ばれる切断方式等を採用できる。本工程で用いるダイシング装置としては特に限定されず、従来公知のものを用いることができる。
ダイシングテープ11に接着固定された半導体チップ5を回収するために、図2Fに示すように、アンダーフィルシート2付きの半導体チップ5のピックアップを行って、半導体チップ5とアンダーフィルシート2の積層体20をダイシングテープ11より剥離する。
接続工程では、被着体6と半導体チップ5の間の空間をアンダーフィルシート2で充填しつつ接続部材4を介して半導体チップ5と被着体6とを電気的に接続する(図2G参照)。具体的には、積層体20の半導体チップ5を、半導体チップ5の回路面3aが被着体6と対向する形態で、被着体6に常法に従い固定させる。例えば、半導体チップ5に形成されている接続部材4を、被着体6の接続パッドに被着された接合用の導電材7に接触させて押圧しながら導電材7を溶融させることにより、半導体チップ5と被着体6との電気的接続を確保し、半導体チップ5を被着体6に固定させることができる。半導体チップ5の回路面3aにはアンダーフィルシート2が貼り付けられているので、半導体チップ5と被着体6との電気的接続と同時に、半導体チップ5と被着体6との間の空間がアンダーフィルシート2により充填されることになる。
アンダーフィルシート2は前述の粘度特性を有するため、上記加熱条件下において、流動性が最適範囲となり、半導体素子表面の凹凸を良好に埋め込みでき、端子間を良好に接続できる。また、アウトガスによるボイドの発生も低減できる。なお、上記加熱条件下では、接続部材4及び導電材7の一方又は両方を溶融できる。
半導体素子5と被着体6との電気的接続を行った後は、アンダーフィルシート2を加熱により硬化させる。これにより、半導体素子5の表面を保護することができるとともに、半導体素子5と被着体6との間の接続信頼性を確保することができる。アンダーフィルシート2の硬化のための加熱温度としては特に限定されず、例えば、150〜200℃で10〜120分間である。なお、接続工程における加熱処理によりアンダーフィルシートを硬化させてもよい。
次に、実装された半導体チップ5を備える半導体装置30全体を保護するために封止工程を行ってもよい。封止工程は、封止樹脂を用いて行われる。このときの封止条件としては特に限定されないが、通常、175℃で60秒間〜90秒間の加熱を行うことにより、封止樹脂の熱硬化が行われるが、本発明はこれに限定されず、例えば165℃〜185℃で、数分間キュアすることができる。
半導体装置30では、半導体チップ5と被着体6とが、半導体チップ5上に形成された接続部材4及び被着体6上に設けられた導電材7を介して電気的に接続されている。また、半導体素子5と被着体6との間には、その空間を充填するようにアンダーフィルシート2が配置されている。
本発明のダイシングテープ一体型アンダーフィルシートは、ダイシングテープと、前述のアンダーフィルシートとを備える。
次に、ダイシングテープ一体型アンダーフィルシート50を用いる半導体装置の製造方法について説明する。図4は、ダイシングテープ一体型アンダーフィルシート50を用いる半導体装置の製造方法の各工程を示す図である。具体的には、当該半導体装置の製造方法は、接続部材44を有する回路面が両面に形成された半導体ウェハ43とダイシングテープ一体型アンダーフィルシート50のアンダーフィルシート42とを貼り合わせる貼合せ工程、半導体ウェハ43をダイシングしてアンダーフィルシート42付きの半導体チップ45を形成するダイシング工程、アンダーフィルシート42付きの半導体チップ45をダイシングテープ41から剥離するピックアップ工程、被着体46と半導体チップ45の間の空間をアンダーフィルシート42で充填しつつ接続部材44を介して半導体チップ45と被着体46とを電気的に接続する接続工程、及びアンダーフィルシート42を硬化させる硬化工程を含む。
貼合せ工程では、図4Aに示すように、接続部材44を有する回路面が両面に形成された半導体ウェハ43とダイシングテープ一体型アンダーフィルシート50のアンダーフィルシート42とを貼り合わせる。なお、通常、半導体ウェハ43の強度は弱いことから、補強のために半導体ウェハをサポートガラス等の支持体に固定することがある(図示せず)。この場合は、半導体ウェハ43とアンダーフィルシート42との貼り合わせ後に、支持体を剥離する工程を含んでいてもよい。半導体ウェハ43のいずれの回路面とアンダーフィルシート42とを貼り合わせるかは、目的とする半導体装置の構造に応じて変更すればよい。
ダイシング工程では、半導体ウェハ43及びアンダーフィルシート42をダイシングしてアンダーフィルシート42付きの半導体チップ45を形成する(図4B参照)。
ダイシング条件としては、裏面研削用テープ一体型アンダーフィルシートのダイシング工程で例示した条件を採用できる。
ピックアップ工程では、アンダーフィルシート42付きの半導体チップ45をダイシングテープ41から剥離する(図4C)。
ピックアップ条件としては、裏面研削用テープ一体型アンダーフィルシートのピックアップ工程で例示した条件を採用できる。
接続工程では、被着体46と半導体素子45の間の空間をアンダーフィルシート42で充填しつつ接続部材44を介して半導体素子45と被着体46とを電気的に接続する(図4D参照)。具体的な接続方法は、裏面研削用テープ一体型アンダーフィルシートの接続工程で説明した内容と同様である。接続工程の加熱条件としては、前述のアンダーフィルシートの加熱条件と同様である。
硬化工程及び封止工程は、裏面研削用テープ一体型アンダーフィルシートの硬化工程及び封止工程で説明した内容と同様である。これにより、半導体装置70を製造することができる。
以下の成分を表1に示す割合でメチルエチルケトンに溶解して、固形分濃度が23.6〜60.6重量%となる接着剤組成物の溶液を調製した。
アクリル樹脂2:アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(商品名「パラクロンW−197CM」、根上工業株式会社製)
エポキシ樹脂1:商品名「エピコート828」、JER株式会社製
エポキシ樹脂2:商品名「エピコート1004」、JER株式会社製
フェノール樹脂:商品名「ミレックスXLC−4L」三井化学株式会社製
シリカフィラー1:球状シリカ(商品名「SO−25R」、平均粒子径:500nm(0.5μm)、株式会社アドマテックス製)
シリカフィラー2:球状シリカ(商品名「YC050C−MJF」、平均粒子径:50nm(0.05μm)、株式会社アドマテックス製
有機酸:o−アニス酸(商品名「オルトアニス酸」、東京化成株式会社製)
硬化剤:イミダゾール触媒(商品名「2PHZ−PW」、四国化成株式会社製)
レオメーターを用いて、ギャップを100μmに設定し、回転速度を1分間に0.1回転で150℃一定のまま300秒測定し、測定開始から300秒後の値を150℃における粘度とした。
レオメーターを用いて、ギャップを100μmに設定し、回転速度が1分間に0.5回転となるように設定し、10℃/分の昇温速度で昇温し、硬化反応により粘度を上昇させ、回転できなくなるまで測定を行った。100℃から200℃までの範囲での粘度の最低値を最低粘度とした。
熱膨張率αは、熱機械測定装置(ティーエーインスツルメント社製:形式Q−400EM)を用いて測定した。具体的には、測定試料のサイズを長さ15mm×幅5mm×厚さ200μmとし、測定試料を上記装置のフィルム引張測定用治具にセットした後、−50〜300℃の温度域で、引張荷重2g、昇温速度10℃/minの条件下におき、20℃〜60℃での膨張率から熱膨張係数αを算出した。
貯蔵弾性率の測定は、アンダーフィルシートを175℃で1時間熱硬化処理してから、固体粘弾性測定装置(レオメトリックサイエンティック社製:形式:RSA−III)を用いて測定した。すなわち、サンプルサイズを長さ40mm×幅10mm×厚さ200μmとし、測定試料をフィルム引っ張り測定用治具にセットし−50〜300℃の温度域での引張貯蔵弾性率及び損失弾性率を、周波数1Hz、昇温速度10℃/minの条件下で測定し、25℃での貯蔵弾性率(E’)を読み取ることにより得た。
まず、アンダーフィルシートを175℃で1時間の加熱処理により熱硬化させ、その後厚さ200μm、長さ40mm(測定長さ)、幅10mmの短冊状にカッターナイフで切り出し、固体粘弾性測定装置(RSAIII、レオメトリックサイエンティフィック(株)製)を用いて、−50〜300℃における貯蔵弾性率及び損失弾性率を測定した。測定条件は、周波数1Hz、昇温速度10℃/minとした。さらに、tanδ(G’’(損失弾性率)/G’(貯蔵弾性率))の値を算出することによりガラス転移温度を得た。
アンダーフィルシートを裏面研削用テープ(商品名「UB−2154」、日東電工株式会社製)の粘着剤層上にハンドローラーを用いて貼り合わせ、裏面研削用テープ一体型アンダーフィルシートを作製した。
片面にバンプが形成されている片面バンプ付きシリコンウェハを用意し、この片面バンプ付きシリコンウェハのバンプが形成されている側の面に、作製した裏面研削用テープ一体型アンダーフィルシートを、アンダーフィルシートを貼り合わせ面として貼り合わせた。片面バンプ付きシリコンウェハとしては、以下のものを用いた。また、貼り合わせ条件は以下の通りである。アンダーフィルシートの厚さY(=45μm)のパンブの高さX(=45μm)に対する比(Y/X)は、1であった。
シリコンウェハの直径:8インチ
シリコンウェハの厚さ:0.7mm(700μm)
バンプの高さ:45μm
バンプのピッチ:50μm
バンプの材質:スズ‐銀共晶はんだ
貼り付け装置:商品名「DSA840−WS」、日東精機株式会社製
貼り付け速度:5mm/min
貼り付け圧力:0.25MPa
貼り付け時のステージ温度:70℃
貼り付け時の減圧度:150Pa
ピックアップ装置:商品名「SPA−300」株式会社新川社製
ニードル本数:9本
ニードル突き上げ量:500μm(0.5mm)
ニードル突き上げ速度:20mm/秒
ピックアップ時間:1秒
エキスパンド量:3mm
熱圧着装置:商品名「FCB−3」パナソニック製
加熱温度:260℃
荷重:30N
保持時間:10秒
得られた半導体装置をチップ面と平行にアンダーフィル樹脂部分まで研磨を行い、アンダーフィルを顕微鏡で観察し、ボイドの有無を調べた。ボイド無しの場合を○と判定し、ボイド有の場合を×と判定した。
半導体装置をはんだ接合部が露出するように垂直面に研磨を行い、その断面が破断していない場合を○(良品)、破断していた場合を×(欠陥品)とした。
半導体装置を各10サンプル作成し、−55℃〜125℃を30分で1サイクルする熱サイクルを500サイクル繰り返した後、半導体装置を包埋用エポキシ樹脂で包埋した。次いで、半導体装置をはんだ接合部が露出するように基板に垂直な方向で切断し、露出したはんだ接合部の断面を研磨した。その後、研磨したはんだ接合部の断面を光学顕微鏡(倍率:1000倍)により観察し、はんだ接合部が破断していない場合を良品、はんだ接合部が破断していた場合を欠陥品として評価した。
1a 基材
1b 粘着剤層
2 アンダーフィルシート
3 半導体ウェハ
3a 半導体ウェハの回路面
3b 半導体ウェハの回路面とは反対側の面
4 接続部材(バンプ)
5 半導体チップ
6 被着体
7 導通材
10 裏面研削用テープ一体型アンダーフィルシート
11 ダイシングテープ
11a 基材
11b 粘着剤層
20 積層体
30 半導体装置
41 ダイシングテープ
41a 基材
41b 粘着剤層
42 アンダーフィルシート
43 半導体ウェハ
44 接続部材(バンプ)
45 半導体チップ
46 被着体
47 導通材
50 ダイシングテープ一体型アンダーフィルシート
60 積層体
70 半導体装置
Claims (10)
- フラックス作用を有する化合物を含み、
150℃、0.05〜0.20回転/分における粘度が1000〜10000Pa・sであり、
100〜200℃、0.3〜0.7回転/分における最低粘度が100Pa・s以上であるアンダーフィルシート。 - 平均粒子径0.01〜10μmのシリカフィラーを15〜70重量%、アクリル樹脂を2〜30重量%含む請求項1に記載のアンダーフィルシート。
- 175℃で1時間熱硬化処理した後の貯蔵弾性率E’[MPa]及び熱膨張係数α[ppm/K]が25℃において下記式(1)を満たす請求項1又は2に記載のアンダーフィルシート。
E’×α<250000[Pa/K] ・・・(1) - 前記貯蔵弾性率E’は100〜10000[MPa]であり、かつ前記熱膨張係数αは10〜200[ppm/K]である請求項3に記載のアンダーフィルシート。
- 前記貯蔵弾性率E’[MPa]と上記熱膨張係数α[ppm/K]とが下記式(2)を満たす請求項3又は4に記載のアンダーフィルシート。
10000<E’×α<250000[Pa/K] ・・・(2) - 熱硬化性樹脂を含む請求項1〜5のいずれか1項に記載のアンダーフィルシート。
- 前記熱硬化性樹脂がエポキシ樹脂とフェノール樹脂とを含む請求項6に記載のアンダーフィルシート。
- 裏面研削用テープと、前記裏面研削用テープ上に積層された請求項1〜7のいずれか1項に記載のアンダーフィルシートとを備える裏面研削用テープ一体型アンダーフィルシート。
- ダイシングテープと、前記ダイシングテープ上に積層された請求項1〜7のいずれか1項に記載のアンダーフィルシートとを備えるダイシングテープ一体型アンダーフィルシート。
- 請求項1〜7のいずれか1項に記載のアンダーフィルシートを介して、半導体素子を被着体に固定する工程を含む半導体装置の製造方法。
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CN113423753B (zh) * | 2019-02-21 | 2024-06-11 | 松下知识产权经营株式会社 | 半导体封装材料和半导体器件 |
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