WO2017166337A1 - 薄膜晶体管、薄膜晶体管的制备方法及液晶显示面板 - Google Patents

薄膜晶体管、薄膜晶体管的制备方法及液晶显示面板 Download PDF

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WO2017166337A1
WO2017166337A1 PCT/CN2016/079272 CN2016079272W WO2017166337A1 WO 2017166337 A1 WO2017166337 A1 WO 2017166337A1 CN 2016079272 W CN2016079272 W CN 2016079272W WO 2017166337 A1 WO2017166337 A1 WO 2017166337A1
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layer
conductive portion
end surface
disposed
region
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PCT/CN2016/079272
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English (en)
French (fr)
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赵书力
卢马才
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深圳市华星光电技术有限公司
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Priority to US15/101,006 priority Critical patent/US20180081215A1/en
Publication of WO2017166337A1 publication Critical patent/WO2017166337A1/zh

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    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
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    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/1259—Multistep manufacturing methods
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78639—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a drain or source connected to a bulk conducting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/426—Bombardment with radiation with high-energy radiation producing ion implantation using masks

Definitions

  • the present invention claims the priority of the prior art application entitled “Thin-film transistor, method of fabricating a thin film transistor, and liquid crystal display panel”, which is filed on March 28, 2016. The content of the above-mentioned prior application is incorporated by reference. Into this text.
  • the present invention relates to the field of display, and in particular, to a thin film transistor, a method of fabricating the thin film transistor, and a liquid crystal display panel.
  • a liquid crystal display device for example, a liquid crystal display (LCD) is a commonly used electronic device, which is favored by users because of its low power consumption, small size, and light weight.
  • a liquid crystal display usually includes an array substrate, and the array substrate includes a plurality of thin film transistors (TFTs) distributed in a display shape.
  • TFTs thin film transistors
  • the quality of the thin film transistor directly affects the quality of the liquid crystal display panel.
  • the conventional thin film transistor is usually prepared by using six masks, and the six masks required for the preparation of the thin film transistors are described below.
  • a sixth photomask forms a pixel electrode, and the pixel electrode is electrically connected to the drain region through the contact hole.
  • the invention provides a thin film transistor, the thin film transistor comprising:
  • a gate region disposed on a surface of the substrate
  • a second conductive portion disposed on a surface of the insulating layer away from the gate region, and the second conductive The portion is spaced apart from the first conductive portion;
  • a source region disposed on a surface of the first conductive portion away from the insulating layer
  • drain region disposed on a surface of the second conductive portion away from the insulating layer
  • An active layer disposed on a surface of the insulating layer away from the gate region, and opposite ends of the active layer are electrically connected to the source region and the drain region, respectively;
  • a passivation layer covering the source region, the drain region, and the active layer.
  • the thin film transistor further includes: a pixel electrode disposed on a surface of the second conductive portion away from the insulating layer, the pixel electrode being disposed in the same layer as the drain region, and the pixel electrode and the drain District electrical connection.
  • the pixel electrode and the drain region are integrated.
  • the active layer is a metal oxide semiconductor layer.
  • the active layer is disposed in the same layer as the first conductive portion and the second conductive portion.
  • the gate region includes a first end surface, a second end surface, and a third end surface, wherein the first end surface is in contact with the substrate, the second end surface is opposite to the third end surface, and the second end surface and The third end surface is intersected with the first end surface, the second end surface is disposed adjacent to the source region than the third end surface, and the third end surface is adjacent to the second end surface.
  • the drain region is disposed, the second end surface is coplanar with an end surface of the active layer facing the source region, and the third end surface is coplanar with an end surface of the active layer facing the drain region.
  • the invention also provides a method for preparing a thin film transistor, the method for preparing the thin film transistor comprises:
  • the substrate comprising opposite first and second surfaces
  • a transparent oxide semiconductor film layer covered by the first photoresist pattern is an active layer
  • a passivation layer covering the source region, the drain region, and the active layer is formed.
  • step of “patterning the second photoresist layer to define a source region disposed on a surface of the first conductive portion away from the insulating layer, and being disposed in the second conductive portion Moving away from the drain region on the surface of the insulating layer and stripping the second photoresist layer” includes:
  • the ion implantation is hydrogen ion implantation.
  • the present invention also provides a liquid crystal display panel, wherein the liquid crystal display panel comprises the thin film transistor according to any of the foregoing embodiments.
  • a thin film transistor is prepared by using two photomask processes, thereby reducing the number of times of using the photomask and simplifying the process of the thin film transistor.
  • the source region in the thin film transistor of the present invention is in contact with the active layer through the first conductive portion, which reduces contact resistance between the source region and the active layer, and improves contact characteristics between the source region and the active layer;
  • the drain region in the thin film transistor of the present invention is in contact with the active layer through the second conductive portion, which reduces contact resistance between the drain region and the active layer, and improves contact characteristics between the drain region and the active layer.
  • FIG. 1 is a schematic cross-sectional view showing a thin film transistor according to a preferred embodiment of the present invention.
  • FIG. 2 is a schematic structural view of a liquid crystal display panel according to a preferred embodiment of the present invention.
  • FIG. 3 is a flow chart of a method of fabricating a thin film transistor according to a preferred embodiment of the present invention.
  • FIG. 1 is a cross-sectional structural diagram of a thin film transistor according to a preferred embodiment of the present invention.
  • the thin film transistor 10 includes a substrate 110 and a gate region 120 disposed on the same side of the substrate 110, an insulating layer 130, a first conductive portion 141, a second conductive portion 142, a source region 150, a drain region 160, and an active layer 170. And a passivation layer 180.
  • the gate region 120 is disposed on a surface of the substrate 110; the insulating layer 130 covers the gate region 120; the first conductive portion 141 is disposed on a surface of the insulating layer 130 away from the gate region 120; The second conductive portion 142 is disposed on a surface of the insulating layer 130 away from the gate region 120, and the second conductive portion 142 is spaced apart from the first conductive portion 141; the source region 150 is disposed at The first conductive portion 141 is away from the surface of the insulating layer 130; the drain region 160 is disposed on a surface of the second conductive portion 142 away from the insulating layer 130; the active layer 170 is disposed at the surface The insulating layer 130 is away from the surface of the gate region 120, and opposite ends of the active layer 170 are electrically connected to the source region 150 and the drain region 160, respectively; the passivation layer 180 covers the a source region 150, the drain region 160, and the active layer 170.
  • the substrate 110 is an insulating substrate having a light transmittance exceeding the preset light transmittance.
  • the preset light transmittance may be, but not limited to, 90%.
  • the material of the substrate 110 includes any one or more of electrical insulating materials such as quartz, mica, alumina or transparent plastic.
  • the substrate 110 is an insulating layer substrate capable of reducing high frequency loss of the substrate 110.
  • the gate region 120 includes a first end surface 121, a second end surface 122, and a third end surface 123.
  • the first end surface 121 is in contact with the substrate 110, and the second end surface 122 is opposite to the third end surface 123.
  • the second end surface 122 and the third end surface 123 intersect with the first end surface 121.
  • the second end surface 122 is disposed adjacent to the source region 150 compared to the third end surface 123
  • the third end surface 123 is disposed adjacent to the drain region 160 compared to the second end surface 122 .
  • the second end surface 122 is coplanar with the end surface of the active layer 170 facing the source region 150
  • the third end surface 123 is coplanar with the end surface of the active layer 170 facing the drain region 160 .
  • the third end surface 123 of the gate region 120 faces the active layer 170
  • the end faces of the drain region 160 are coplanar. Therefore, there is no insulating layer dielectric sidewall between the gate region 120 and the source region 150, and there is no insulating medium spacer between the gate region 120 and the drain region 160, thereby suppressing the film.
  • a parasitic resistance effect that may exist in transistor 10.
  • the second end surface 122 of the gate region 120 is coplanar with the end surface of the active layer 170 facing the source region 150, the third end surface 123 of the gate region 120 and the active layer The end faces of the drain region 160 are coplanar, the gate region 120 and the source region 150 are not overlapped, and the gate region 120 and the drain region 160 are not overlapped.
  • the parasitic capacitance between the gate region 120 and the source region 150 is small, and the parasitic capacitance between the gate region 120 and the drain region 160 is small.
  • the gate region 120, the source region 150, and the drain region 160 in the thin film transistor 10 of the present invention may be made thicker without significantly increasing the gate region 120 and the gate region.
  • the thicker gate region 120, the thicker source region 150, and the thicker floor security 160 can reduce the resistance of these electrode regions themselves, as well as the parasitic resistance generated by these electrode regions.
  • the gate region 120 has a thickness of 1500 to 6000 angstroms
  • the source region 150 has a thickness of 2000 to 5000 angstroms
  • the drain region 160 has a thickness of 2000 to 5000 angstroms.
  • the gate region 120 may block ultraviolet light passing through the substrate 110 such that ultraviolet light passing through the substrate 110 cannot pass through the gate region 120. It can be understood that when the transmittance of ultraviolet light passing through the substrate 110 through the gate region 120 is less than a predetermined threshold (for example, 5%), it can also be considered to pass through the substrate 110. Ultraviolet light cannot pass through the gate region 120.
  • the material of the gate region 120 includes, but is not limited to, one or more of metal materials such as Al, Mo, Cu, Ag, Cr, Ti, AlNi, MoTi.
  • the gate region 120 has a thickness of 1500 to 6000 angstroms.
  • the insulating layer 130 includes a first sub-insulating layer 131 and a second sub-insulating layer 132.
  • the first child The insulating layer 131 covers the gate region 120, and the second sub-insulating layer 132 covers the first sub-insulating layer 131.
  • the first sub-insulating layer 131 comprises a silicon nitride (SiNx) material
  • the second sub-insulating layer 132 comprises a silicon oxide (SiOx) material.
  • the first sub-insulating layer 131 is made of a silicon nitride material, and can generate hydrogen element (H) for repairing the active layer 180 for improving the electric energy of the active layer 180 when preparing a silicon nitride material. performance.
  • the second sub-insulating layer 132 can improve the stress of the first conductive portion 141, the second conductive portion 142, and the active layer 180 disposed on the second sub-insulating layer 132 to prevent the first conductive The portion 141, the second conductive portion 142, and the active layer 180 are detached.
  • the insulating layer 130 may have a thickness of 1500 to 4000 angstroms.
  • the first conductive portion 141 and the second conductive portion 142 may be obtained by performing ultraviolet light irradiation or ion implantation treatment on the transparent oxide semiconductor film layer.
  • the ion implantation may be hydrogen ion implantation.
  • the transparent oxide semiconductor film layer may include, but is not limited to, one or more of the following materials: a ZnO-based transparent oxide semiconductor material, a SnO 2 -based transparent oxide semiconductor material, and an In 2 O 3 -based transparent oxide semiconductor material. Wait.
  • the transparent oxide semiconductor film layer may be Indium Gallium Zinc Oxide (IGZO).
  • the first conductive portion 141 may improve contact characteristics between the source region 150 and the active layer 170.
  • the second conductive portion 142 may improve contact characteristics between the drain region 160 and the active layer 170.
  • the material of the source region 150 and the drain region 160 may be a transparent conductive oxide film layer, including but not limited to Indium Tin Oxide (ITO), indium zinc oxide. (Indium Zinc Oxide, IZO), fluorine-doped tin oxide (SnO2: F, FTO), aluminum-doped zinc oxide (ZnO: Al, AZO).
  • ITO Indium Tin Oxide
  • IZO Indium Zinc Oxide
  • SnO2 F, FTO
  • ZnO Al, AZO
  • the active layer 170 is also referred to as a channel layer.
  • the active layer 170 is a metal oxide semiconductor layer, and the metal oxide semiconductor layer may include, but is not limited to, one or more of the following materials. : ZnO-based transparent oxide semiconductor material, SnO 2 -based transparent oxide semiconductor material, In 2 O 3 -based transparent oxide semiconductor material, and the like.
  • the active layer 170 may be Indium Gallium Zinc Oxide (IGZO).
  • the active layer 170 is disposed in the same layer as the first conductive portion 141 and the second conductive portion 142.
  • the passivation layer 180 has a thickness of 1500 to 4000 angstroms.
  • the passivation layer 180 can be, but is not limited to It is a silicon nitride (SiNx) material, a silicon oxide (SiOx) material, or a composite layer of a silicon oxide material and a silicon nitride material.
  • the thin film transistor 10 further includes a pixel electrode 190 disposed on a surface of the second conductive portion 142 away from the insulating layer 130.
  • the pixel electrode 190 is disposed in the same layer as the drain region 160 and the pixel electrode 190 is electrically connected to the drain region 160.
  • the pixel electrode 190 and the drain region 160 are of a unitary structure.
  • the pixel electrode 190 has a thickness of 300 to 1000 angstroms.
  • the pixel electrode 190 may be, but not limited to, Indium Tin Oxide (ITO).
  • FIG. 2 is a schematic structural diagram of a liquid crystal display panel according to a preferred embodiment of the present invention.
  • the liquid crystal display panel 1 of the present invention includes an array substrate 2, a color filter substrate 3, and a liquid crystal layer 4.
  • the array substrate 2 is disposed opposite to and spaced apart from the color filter substrate 3, and the liquid crystal layer 4 is interposed between the array substrate 2 and the color filter substrate 3.
  • the array substrate 2 includes a plurality of thin film transistors 10 distributed in an array. For the thin film transistor 10, refer to the foregoing description, and details are not described herein again.
  • FIG. 3 is a flowchart of a method for fabricating a thin film transistor according to a preferred embodiment of the present invention.
  • the method of preparing the thin film transistor includes, but is not limited to, the following steps.
  • a substrate 110 is provided, and the substrate 110 includes a first surface 111 and a second surface 112 disposed opposite to each other.
  • the substrate 110 is an insulating substrate having a light transmittance exceeding the preset light transmittance.
  • the preset light transmittance may be, but not limited to, 90%.
  • the material of the substrate 110 includes any one or more of electrical insulating materials such as quartz, mica, alumina or transparent plastic.
  • the substrate 110 is an insulating layer substrate capable of reducing high frequency loss of the substrate 110.
  • a first metal layer is deposited on the first surface 111 of the substrate 110, and the gate region 120 is formed by etching through the first mask.
  • the first metal layer may block ultraviolet light passing through the substrate 110 such that ultraviolet light passing through the substrate 110 cannot pass through the gate region 120. It can be understood that when the transmittance of ultraviolet light passing through the substrate 110 through the gate region 120 is less than a predetermined threshold (for example, 5%), it can also be considered to pass through the substrate 110. Ultraviolet light cannot pass through the gate region 120.
  • the material of the first metal layer includes, but is not limited to, one or more of metal materials such as Al, Mo, Cu, Ag, Cr, Ti, AlNi, MoTi. S103, An insulating layer 130 covering the gate region 120 is formed on the gate region 120.
  • the insulating layer 130 includes, but is not limited to, a silicon nitride (SiNx) material, a silicon oxide (SiOx) material, or the like.
  • the transparent oxide semiconductor film layer may include, but is not limited to, one or more of the following materials: a ZnO-based transparent oxide semiconductor material, a SnO 2 -based transparent oxide semiconductor material, and an In 2 O 3 -based transparent oxide semiconductor material. Wait.
  • the transparent oxide semiconductor film layer may be Indium Gallium Zinc Oxide (IGZO).
  • the second conductive portion 142 is a transparent oxide semiconductor film layer covered by the first photoresist pattern as the active layer 170.
  • the ion implantation is hydrogen ion implantation.
  • the transparent oxide material film layer is irradiated with ultraviolet light at different times, and its conductivity changes significantly.
  • the mobility and carrier concentration increase with the irradiation time of the ultraviolet light, that is, it has good Conductive properties.
  • the transparent oxide material film layer as IGZO as an example, it has been tested that the resistivity of the irradiated transparent oxide material film layer is 4.6*10 -3 after being irradiated by ultraviolet light for 4 hours.
  • the hall mobility is 14.6 cm 2 /V
  • the carrier concentration is 1.6*10 12 cm 2
  • the aging test after a period of time (4 weeks in this test) is transparent oxidation by ultraviolet radiation.
  • the conductivity, mobility, and carrier concentration of the material layer were hardly changed.
  • the step S110 includes: patterning the second photoresist layer to define a setting in the first A conductive portion 141 is away from the source region 150 on the surface of the insulating layer 130, is disposed on the drain region 160 on the surface of the second conductive portion 142 away from the insulating layer 130, and is disposed away from the second conductive portion 142 A pixel electrode 190 disposed on the surface of the insulating layer 130 in the same layer as the drain region 160 and electrically connected to the drain region 160.
  • the process of preparing the source region 150, the drain region 160 (and the pixel electrode 190) uses a second mask.
  • a thin film transistor is prepared by using two photomask processes, thereby reducing the number of times of using the photomask and simplifying the process of the thin film transistor.
  • the source region 150 in the thin film transistor 10 of the present invention is in contact with the active layer 170 through the first conductive portion 141, which reduces the contact resistance between the source region 150 and the active layer 170, and enhances the source region 150 and the active region.
  • the contact characteristics between the layers 170; in addition, the drain region 160 in the thin film transistor 10 of the present invention is in contact with the active layer 170 through the second conductive portion 142, reducing the contact resistance between the drain region 160 and the active layer 170.

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Abstract

一种薄膜晶体管（10）、液晶显示面板及薄膜晶体管（10）的制备方法。薄膜晶体管（10）包括：基板（110）；栅区（120），设置在基板（110）的表面；绝缘层（130），覆盖栅区（120）；第一导电部（141），设置在绝缘层（130）远离栅区（120）的表面上；第二导电部（142），设置在绝缘层（130）远离栅区（120）的表面上，且第二导电部（142）与第一导电部（141）间隔设置；源区（150），设置在第一导电部（141）远离绝缘层（130）的表面上；漏区（160），设置在第二导电部（142）远离绝缘层（130）的表面上；有源层（170），设置在绝缘层（130）远离栅区（120）的表面上，且有源层（170）相对的两端分别与源区（150）及漏区（160）电连接；及钝化层（180），覆盖源区（150）、漏区（160）及有源层（170）。

Description

薄膜晶体管、薄膜晶体管的制备方法及液晶显示面板
本发明要求2016年3月28日递交的发明名称为“薄膜晶体管、薄膜晶体管的制备方法及液晶显示面板”的申请号201610182408.4的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及显示领域，尤其涉及一种薄膜晶体管、薄膜晶体管的制备方法及液晶显示面板。
背景技术
液晶显示装置，比如，液晶显示器(Liquid Crystal Display,LCD)是一种常用的电子设备，由于其具有功耗低、体积小、重量轻等特点，因此备受用户的青睐。液晶显示器中通常包括阵列基板，阵列基板包括呈陈列状分布的多个薄膜晶体管(Thin Film Transistor，TFT)，薄膜晶体管的质量好坏直接影响到液晶显示面板的质量。现有薄膜晶体管的制备方法通常采用六道光罩，薄膜晶体管的制备中需要的六道光罩介绍如下。第一道光罩，形成栅区；第二道光罩，形成有源层；第三道光罩，形成蚀刻阻挡层；第四道光罩，形成源区和漏区；第五道光罩，形成接触孔，以漏出部分漏区；第六道光罩，形成像素电极，像素电极通过接触孔与漏区电连接。由此可见，现有技术中，薄膜晶体管的制备方法中光罩的使用次数较多，制程较为复杂。
发明内容
本发明提供一种薄膜晶体管，所述薄膜晶体管包括：
基板；
栅区，设置在所述基板的表面；
绝缘层，覆盖所述栅区；
第一导电部，设置在所述绝缘层远离所述栅区的表面上；
第二导电部，设置在所述绝缘层远离所述栅区的表面上，且所述第二导电 部与所述第一导电部间隔设置；
源区，设置在所述第一导电部远离所述绝缘层的表面上；
漏区，设置在所述第二导电部远离所述绝缘层的表面上；
有源层，设置在所述绝缘层远离所述栅区的表面上，且所述有源层相对的两端分别与所述源区及所述漏区电连接；及
钝化层，覆盖所述源区、所述漏区及所述有源层。
其中，所述薄膜晶体管还包括：像素电极，设置在所述第二导电部远离所述绝缘层的表面上，所述像素电极与所述漏区同层设置且所述像素电极与所述漏区电连接。
其中，所述像素电极与所述漏区为一体结构。
其中，所述有源层为金属氧化物半导体层。
其中，所述有源层与所述第一导电部及所述第二导电部同层设置。
其中，所述栅区包括第一端面、第二端面及第三端面，所述第一端面与所述基板接触，所述第二端面与所述第三端面相对设置且所述第二端面及所述第三端面均与所述第一端面相交，所述第二端面相较于所述第三端面邻近所述源区设置，所述第三端面相较于所述第二端面邻近所述漏区设置，所述第二端面与有源层面向所述源区的端面共面，所述第三端面与所述有源层面向所述漏区的端面共面。
本发明还提供了一种薄膜晶体管的制备方法，所述薄膜晶体管的制备方法包括：
提供基板，所述基板包括相对设置的第一表面及第二表面；
在所述第一表面沉积第一金属层，并将所述第一金属层进行图案化以形成栅区；
在所述栅区上形成覆盖所述栅区的绝缘层；
在所述绝缘层远离所述栅区的表面上沉积透明氧化物半导体膜层；
形成覆盖所述透明氧化物半导体膜层的第一光阻层；
以所述栅区为掩膜，自所述第二表面对所述第一光阻层进行曝光，移除未被所述栅区遮挡的第一光阻层，保留被所述栅区遮挡的第一光阻层以形成对应所述栅区的第一光阻图案；
以所述第一光阻图案为掩膜，对未被所述第一光阻图案覆盖的透明氧化物半导体膜层进行离子注入或者紫外光照射，以分别得到第一导电部及第二导电部，被所述第一光阻图案覆盖的透明氧化物半导体膜层为有源层；
沉积透明导电氧化物膜层，并剥离所述第一光阻图案；
在所述透明导电氧化物膜层上沉积第二光阻层；
对所述第二光阻层进行图案化，以定义出设置在所述第一导电部远离所述绝缘层的表面上的源区，以及设置在所述第二导电部远离所述绝缘层的表面上的漏区，并剥离所述第二光阻层；
形成覆盖所述源区、所述漏区及所述有源层的钝化层。
其中，所述步骤“对所述第二光阻层进行图案化，以定义出设置在所述第一导电部远离所述绝缘层的表面上的源区，以及设置在所述第二导电部远离所述绝缘层的表面上的漏区，并剥离所述第二光阻层”包括：
对所述第二光阻层进行图案化，以定义出设置在所述第一导电部远离所述绝缘层的表面上的源区，设置在所述第二导电部远离所述绝缘层的表面上的漏区，以及设置在第二导电部远离所述绝缘层的表面上的与所述漏区同层设置且与所述漏区电连接的像素电极。
其中，所述离子注入为氢离子注入。
本发明还提供了一种液晶显示面板，其中，所述液晶显示面板包括如前述任意实施方式所述的薄膜晶体管。
相较于现有技术，本发明的薄膜晶体管的制备方法中采用两道光罩工艺制备出了薄膜晶体管，从而减小了光罩的使用次数，简化了薄膜晶体管的制程。且本发明的薄膜晶体管中的源区通过第一导电部与有源层接触，减小了源区与有源层之间的接触电阻，提升了源区与有源层之间的接触特性；另外，本发明的薄膜晶体管中的漏区通过第二导电部与有源层接触，减小了漏区与有源层之间的接触电阻，提升了漏区与有源层之间的接触特性。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述 中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一较佳实施方式的薄膜晶体管的剖面结构示意图。
图2为本发明一较佳实施方式的液晶显示面板的结构示意图。
图3为本发明一较佳实施方式的薄膜晶体管的制备方法的流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1，图1为本发明一较佳实施方式的薄膜晶体管的剖面结构示意图。所述薄膜晶体管10包括基板110及设置在所述基板110同侧的栅区120、绝缘层130、第一导电部141、第二导电部142、源区150、漏区160、有源层170及钝化层180。所述栅区120设置在所述基板110的表面；所述绝缘层130覆盖所述栅区120；所述第一导电部141设置在所述绝缘层130远离所述栅区120的表面上；所述第二导电部142设置在所述绝缘层130远离所述栅区120的表面上，且所述第二导电部142与所述第一导电部141间隔设置；所述源区150设置在所述第一导电部141远离所述绝缘层130的表面上；所述漏区160设置在所述第二导电部142远离所述绝缘层130的表面上；所述有源层170设置在所述绝缘层130远离所述栅区120的表面上，且所述有源层170相对的两端分别与所述源区150及所述漏区160电连接；所述钝化层180覆盖所述源区150、所述漏区160及所述有源层170。
在本实施方式中，所述基板110为对外光的透光率超过预设透光率的绝缘衬底。所述预设透光率可以为但不仅限于为90％。所述基板110的材料包括石英、云母、氧化铝或者透明塑料等电绝缘材料中的任意一种或者多种。所述基板110为绝缘层衬底能够减小所述基板110的高频损耗。
所述栅区120包括第一端面121、第二端面122及第三端面123。所述第一端面121与所述基板110接触，所述第二端面122与所述第三端面123相对 设置，且所述第二端面122与所述第三端面123均与所述第一端面121相交。所述第二端面122相较于所述第三端面123邻近所述源区150设置，所述第三端面123相较于所述第二端面122邻近所述漏区160设置。所述第二端面122与有源层170面向所述源区150的端面共面，所述第三端面123与所述有源层170面向所述漏区160的端面共面。
由于所述栅区120的所述第二端面122与有源层170面向所述源区150的端面共面，所述栅区120的所述第三端面123与所述有源层170面向所述漏区160的端面共面。因此，所述栅区120与所述源区150之间不存在绝缘层介质侧墙且所述栅区120与所述漏区160之间不存在绝缘介质侧墙了，从而抑制了所述薄膜晶体管10中可能存在的寄生电阻效应。进一步地，由于所述栅区120的所述第二端面122与有源层170面向所述源区150的端面共面，所述栅区120的所述第三端面123与所述有源层170面向所述漏区160的端面共面，所述栅区120与所述源区150之间没有交叠，所述栅区120与所述漏区160之间没有交叠，因此，所述栅区120与所述源区150之间的寄生电容较小，所述栅区120与所述漏区160之间的寄生电容较小。
更进一步地，本发明的薄膜晶体管10中的所述栅区120、所述源区150及所述漏区160可以做得较厚，而不会明显增加所述栅区120与所述栅区150之间的寄生电容以及所述栅区120与所述漏区160之间的寄生电容。且较厚的栅区120、较厚的源区150及较厚的楼安全160能够减小这些电极区域自身的电阻，也能抑制这些电极区域产生的寄生电阻。优选地，所述栅区120的厚度为1500～6000埃，所述源区150的厚度为2000～5000埃，所述漏区160的厚度为2000～5000埃。
所述栅区120可以对穿过所述基板110的紫外光进行遮挡，从而使得穿过所述基板110的紫外光无法穿过所述栅区120。可以理解地，当穿过所述基板110的紫外光穿过所述栅区120的透光率小于一预设阈值(比如，为5％)时，则也可以认为穿过所述基板110的紫外光无法穿过所述栅区120。所述栅区120的材料包括但不仅限于Al，Mo，Cu，Ag、Cr、Ti、AlNi、MoTi等金属材料材料中的一种或者多种。所述栅区120的厚度为1500～6000埃。
所述绝缘层130包括第一子绝缘层131及第二子绝缘层132。所述第一子 绝缘层131覆盖所述栅区120，所述第二子绝缘层132覆盖所述第一子绝缘层131。其中，所述第一子绝缘层131包括氮化硅(SiNx)材料，所述第二子绝缘层132包括氧化硅(SiOx)材料。所述第一子绝缘层131采用氮化硅材料，在制备氮化硅材料的时候能够产生氢元素(H)用来修补所述有源层180，用于提高所述有源层180的电性能。所述第二子绝缘层132可以改善设置在所述第二子绝缘层132上的第一导电部141、第二导电部142及所述有源层180的应力，以防止所述第一导电部141、所述第二导电部142及所述有源层180脱落。所述绝缘层130的厚度可以为1500～4000埃。
所述第一导电部141及所述第二导电部142可以为透明氧化物半导体膜层进行紫外光照射或者离子注入处理得到的。所述离子注入可以为氢离子注入。所述透明氧化物半导体膜层可以包括但不仅限于以下材料中的一种或者多种：ZnO基透明氧化物半导体材料，SnO2基透明氧化物半导体材料，In2O3基透明氧化物半导体材料等。举例而言，所述透明氧化物半导体膜层可以为铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)。
所述第一导电部141可以提高所述源区150和所述有源层170之间的接触特性。所述第二导电部142可以提高所述漏区160和所述有源层170之间的接触特性。
所述源区150和所述漏区160的材料可以为透明导电氧化物膜层，所述透明导电氧化物膜层包括但不仅限于为铟锡氧化物(Indium Tin Oxide，ITO)、氧化铟锌(Indium Zinc Oxide，IZO)、氟掺杂氧化锡(SnO2：F，FTO)、铝掺杂氧化锌(ZnO：Al，AZO)。
所述有源层170也称为沟道层，优选地，所述有源层170为金属氧化物半导体层，所述金属氧化物半导体层可以包括但不仅限于以下材料中的一种或者多种：ZnO基透明氧化物半导体材料，SnO2基透明氧化物半导体材料，In2O3基透明氧化物半导体材料等。举例而言，所述有源层170可以为铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)。
优选地，所述有源层170与所述第一导电部141及所述第二导电部142同层设置。
所述钝化层180的厚度为1500～4000埃。所述钝化层180可以为但不仅限 于为氮化硅(SiNx)材料、氧化硅(SiOx)材料、或者氧化硅材料与氮化硅材料的复合层。
所述薄膜晶体管10还包括像素电极190，所述像素电极190设置在所述第二导电部142远离所述绝缘层130的表面上。所述像素电极190与所述漏区160同层设置且所述像素电极190与所述漏区160电连接。优选地，所述像素电极190与所述漏区160为一体结构。所述像素电极190的厚度为300～1000埃。所述像素电极190可以为但不仅限于为氧化铟锡(Indium Tin Oxide，ITO)。
本发明还提供了一种液晶显示面板，请参阅图2，图2为本发明一较佳实施方式的液晶显示面板的结构示意图。本发明的液晶显示面板1包括阵列基板2、彩膜基板3及液晶层4。所述阵列基板2与所述彩膜基板3相对且间隔设置，所述液晶层4夹设在所述阵列基板2与所述彩膜基板3之间。所述阵列基板2包括呈阵列状分布的多个薄膜晶体管10，所述薄膜晶体管10请参阅前述描述，在此不再赘述。
下面结合图1及对图1的描述对本发明的薄膜晶体管的制备方法进行介绍。请一并参阅图3，图3为本发明一较佳实施方式的薄膜晶体管的制备方法的流程图。所述薄膜晶体管的制备方法包括但不仅限于以下步骤。
S101，提供基板110，所述基板110包括相对设置的第一表面111及第二表面112。在本实施方式中，所述基板110为对外光的透光率超过预设透光率的绝缘衬底。所述预设透光率可以为但不仅限于为90％。所述基板110的材料包括石英、云母、氧化铝或者透明塑料等电绝缘材料中的任意一种或者多种。所述基板110为绝缘层衬底能够减小所述基板110的高频损耗。
S102，在所述第一表面111沉积第一金属层，并将所述第一金属层进行图案化以形成栅区120。具体地，在所述基板110的第一表面111沉积第一金属层，通过第一道光罩，蚀刻形成所述栅区120。所述第一金属层可以对穿过所述基板110的紫外光进行遮挡，从而使得穿过所述基板110的紫外光无法穿过所述栅区120。可以理解地，当穿过所述基板110的紫外光穿过所述栅区120的透光率小于一预设阈值(比如，为5％)时，则也可以认为穿过所述基板110的紫外光无法穿过所述栅区120。所述第一金属层的材料包括但不仅限于Al，Mo，Cu，Ag、Cr、Ti、AlNi、MoTi等金属材料材料中的一种或者多种。S103， 在所述栅区120上形成覆盖所述栅区120的绝缘层130。所述绝缘层130包括但不仅限于氮化硅(SiNx)材料，氧化硅(SiOx)材料等。
S104，在所述绝缘层130远离所述栅区120的表面上沉积透明氧化物半导体膜层。所述透明氧化物半导体膜层可以包括但不仅限于以下材料中的一种或者多种：ZnO基透明氧化物半导体材料，SnO2基透明氧化物半导体材料，In2O3基透明氧化物半导体材料等。举例而言，所述透明氧化物半导体膜层可以为铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)。
S105，形成覆盖所述透明氧化物半导体膜层的第一光阻层。
S106，以所述栅区120为掩膜，自所述第二表面112对所述第一光阻层进行曝光，移除未被所述栅区120遮挡的第一光阻层，保留被所述栅区遮挡的第一光阻层以形成对应所述栅区的第一光阻图案。
S107，以所述第一光阻图案为掩膜，对未被所述第一光阻图案覆盖的透明氧化物半导体膜层进行离子注入或者紫外光照射，以分别得到第一导电部141及第二导电部142，被所述第一光阻图案覆盖的透明氧化物半导体膜层为有源层170。在本实施方式中，所述离子注入为氢离子注入。
经过测试表明，透明氧化物材料膜层通过不同时间的紫外光照射，其导电性能会发生明显变化，迁移率和载流子的浓度随着紫外光照射时间的延长而增加，即，具备良好的导电性能。以所述透明氧化物材料膜层为IGZO为例，经过测试表明，经过紫外光照射4个小时，经过照射的透明氧化物材料膜层的部分的电阻率(resistivity)为4.6*10-3，迁移率(hall mobility)为14.6cm2/V，载流子浓度(carrier concentration)为1.6*1012cm2，且经过一段时间(本测试采用4周)的老化测试，被紫外线照射的透明氧化物材料膜层的导电性能、迁移率及载流子的浓度几乎没有发生变化。
S108，沉积透明导电氧化物膜层，并剥离所述第一光阻图案。
S109，在所述透明导电氧化物膜层上沉积第二光阻层。
S110，对所述第二光阻层进行图案化，以定义出设置在所述第一导电部141远离所述绝缘层130的表面上的源区150，以及设置在所述第二导电部142远离所述绝缘层130的表面上的漏区160，并剥离所述第二光阻层。具体地，所述步骤S110包括：对所述第二光阻层进行图案化，以定义出设置在所述第 一导电部141远离所述绝缘层130的表面上的源区150，设置在所述第二导电142部远离所述绝缘层130的表面上的漏区160，以及设置在第二导电部142远离所述绝缘层130的表面上的与所述漏区160同层设置且与所述漏区160电连接的像素电极190。制备所述源区150、所述漏区160(及所述像素电极190)的过程使用了第二道光罩。
S111，形成覆盖所述源区150、所述漏区160及所述有源层170的钝化层180。
相较于现有技术，本发明的薄膜晶体管的制备方法中采用两道光罩工艺制备出了薄膜晶体管，从而减小了光罩的使用次数，简化了薄膜晶体管的制程。且本发明的薄膜晶体管10中的源区150通过第一导电部141与有源层170接触，减小了源区150与有源层170之间的接触电阻，提升了源区150与有源层170之间的接触特性；另外，本发明的薄膜晶体管10中的漏区160通过第二导电部142与有源层170接触，减小了漏区160与有源层170之间的接触电阻，提升了漏区160与有源层170之间的接触特性。以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (15)

  1. 一种薄膜晶体管，其中，所述薄膜晶体管包括：
    基板；
    栅区，设置在所述基板的表面；
    绝缘层，覆盖所述栅区；
    第一导电部，设置在所述绝缘层远离所述栅区的表面上；
    第二导电部，设置在所述绝缘层远离所述栅区的表面上，且所述第二导电部与所述第一导电部间隔设置；
    源区，设置在所述第一导电部远离所述绝缘层的表面上；
    漏区，设置在所述第二导电部远离所述绝缘层的表面上；
    有源层，设置在所述绝缘层远离所述栅区的表面上，且所述有源层相对的两端分别与所述源区及所述漏区电连接；及
    钝化层，覆盖所述源区、所述漏区及所述有源层。
  2. 如权利要求1所述的薄膜晶体管，其中，所述薄膜晶体管还包括：像素电极，设置在所述第二导电部远离所述绝缘层的表面上，所述像素电极与所述漏区同层设置且所述像素电极与所述漏区电连接。
  3. 如权利要求2所述的薄膜晶体管，其中，所述像素电极与所述漏区为一体结构。
  4. 如权利要求1所述的薄膜晶体管，其中，所述有源层为金属氧化物半导体层。
  5. 如权利要求1所述的薄膜晶体管，其中，所述有源层与所述第一导电部及所述第二导电部同层设置。
  6. 如权利要求1所述的薄膜晶体管，其中，所述栅区包括第一端面、第二 端面及第三端面，所述第一端面与所述基板接触，所述第二端面与所述第三端面相对设置且所述第二端面及所述第三端面均与所述第一端面相交，所述第二端面相较于所述第三端面邻近所述源区设置，所述第三端面相较于所述第二端面邻近所述漏区设置，所述第二端面与有源层面向所述源区的端面共面，所述第三端面与所述有源层面向所述漏区的端面共面。
  7. 一种薄膜晶体管的制备方法，其中，所述薄膜晶体管的制备方法包括：
    提供基板，所述基板包括相对设置的第一表面及第二表面；
    在所述第一表面沉积第一金属层，并将所述第一金属层进行图案化以形成栅区；
    在所述栅区上形成覆盖所述栅区的绝缘层；
    在所述绝缘层远离所述栅区的表面上沉积透明氧化物半导体膜层；
    形成覆盖所述透明氧化物半导体膜层的第一光阻层；
    以所述栅区为掩膜，自所述第二表面对所述第一光阻层进行曝光，移除未被所述栅区遮挡的第一光阻层，保留被所述栅区遮挡的第一光阻层以形成对应所述栅区的第一光阻图案；
    以所述第一光阻图案为掩膜，对未被所述第一光阻图案覆盖的透明氧化物半导体膜层进行离子注入或者紫外光照射，以分别得到第一导电部及第二导电部，被所述第一光阻图案覆盖的透明氧化物半导体膜层为有源层；
    沉积透明导电氧化物膜层，并剥离所述第一光阻图案；
    在所述透明导电氧化物膜层上沉积第二光阻层；
    对所述第二光阻层进行图案化，以定义出设置在所述第一导电部远离所述绝缘层的表面上的源区，以及设置在所述第二导电部远离所述绝缘层的表面上的漏区，并剥离所述第二光阻层；
    形成覆盖所述源区、所述漏区及所述有源层的钝化层。
  8. 如权利要求7所述的薄膜晶体管的制备方法，其中，所述步骤“对所述第二光阻层进行图案化，以定义出设置在所述第一导电部远离所述绝缘层的表面上的源区，以及设置在所述第二导电部远离所述绝缘层的表面上的漏区，并 剥离所述第二光阻层”包括：
    对所述第二光阻层进行图案化，以定义出设置在所述第一导电部远离所述绝缘层的表面上的源区，设置在所述第二导电部远离所述绝缘层的表面上的漏区，以及设置在第二导电部远离所述绝缘层的表面上的与所述漏区同层设置且与所述漏区电连接的像素电极。
  9. 如权利要求7所述的薄膜晶体管的制备方法，其中，所述离子注入为氢离子注入。
  10. 一种液晶显示面板，其中，所述液晶显示面板包括薄膜晶体管，所述薄膜晶体管包括：
    基板；
    栅区，设置在所述基板的表面；
    绝缘层，覆盖所述栅区；
    第一导电部，设置在所述绝缘层远离所述栅区的表面上；
    第二导电部，设置在所述绝缘层远离所述栅区的表面上，且所述第二导电部与所述第一导电部间隔设置；
    源区，设置在所述第一导电部远离所述绝缘层的表面上；
    漏区，设置在所述第二导电部远离所述绝缘层的表面上；
    有源层，设置在所述绝缘层远离所述栅区的表面上，且所述有源层相对的两端分别与所述源区及所述漏区电连接；及
    钝化层，覆盖所述源区、所述漏区及所述有源层。
  11. 如权利要求10所述的液晶显示面板，其中，所述薄膜晶体管还包括：像素电极，设置在所述第二导电部远离所述绝缘层的表面上，所述像素电极与所述漏区同层设置且所述像素电极与所述漏区电连接。
  12. 如权利要求11所述的液晶显示面板，其中，所述像素电极与所述漏区为一体结构。
  13. 如权利要求10所述的液晶显示面板，其中，所述有源层为金属氧化物半导体层。
  14. 如权利要求10所述的液晶显示面板，其中，所述有源层与所述第一导电部及所述第二导电部同层设置。
  15. 如权利要求10所述的液晶显示面板，其中，所述栅区包括第一端面、第二端面及第三端面，所述第一端面与所述基板接触，所述第二端面与所述第三端面相对设置且所述第二端面及所述第三端面均与所述第一端面相交，所述第二端面相较于所述第三端面邻近所述源区设置，所述第三端面相较于所述第二端面邻近所述漏区设置，所述第二端面与有源层面向所述源区的端面共面，所述第三端面与所述有源层面向所述漏区的端面共面。
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