WO2017163583A1 - Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur - Google Patents

Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur Download PDF

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Publication number
WO2017163583A1
WO2017163583A1 PCT/JP2017/002335 JP2017002335W WO2017163583A1 WO 2017163583 A1 WO2017163583 A1 WO 2017163583A1 JP 2017002335 W JP2017002335 W JP 2017002335W WO 2017163583 A1 WO2017163583 A1 WO 2017163583A1
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Prior art keywords
semiconductor element
terminal
control
electrode
external
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PCT/JP2017/002335
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English (en)
Japanese (ja)
Inventor
伸 征矢野
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富士電機株式会社
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Application filed by 富士電機株式会社 filed Critical 富士電機株式会社
Priority to JP2018507074A priority Critical patent/JP6665926B2/ja
Priority to CN201780002933.6A priority patent/CN107924913B/zh
Publication of WO2017163583A1 publication Critical patent/WO2017163583A1/fr
Priority to US15/903,031 priority patent/US10283440B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0047—Housings or packaging of magnetic sensors ; Holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/64—Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L31/00 - H10K99/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.
  • Patent Documents 1 and 2 a three-phase output inverter device that is resistant to a large current / high voltage operation environment is used (for example, see Patent Documents 1 and 2).
  • Such an inverter device has a plurality of semiconductor elements as arms for performing switching.
  • Each semiconductor element includes a temperature sensing diode, an IGBT (Insulated Gate Bipolar Transistor) element, and the like.
  • IGBT Insulated Gate Bipolar Transistor
  • the P-side and N-side power terminals the terminals for passing a large current such as the output terminals of each phase, the P-side arm (upper arm) and the N-side arm (lower arm) of each phase It is necessary to provide various control terminals used for the control, and it is difficult to reduce the size of the apparatus because the internal connection with these terminals is complicated.
  • a semiconductor device in a first aspect of the present invention, may include a frame.
  • the semiconductor device may include a first external terminal provided on the first side portion of the frame.
  • the semiconductor device may include a first substrate housed in a frame and having a first conductive layer on an upper surface.
  • the semiconductor device may include a first semiconductor element mounted on the first conductive layer, having a first main electrode connected to the first conductive layer on the lower surface, and having a second main electrode and a control electrode on the upper surface.
  • the semiconductor device may include a first terminal connection portion that connects an exposed portion of the first conductive layer between the first semiconductor element and the first external terminal and the first external terminal.
  • the semiconductor device may include a first external control terminal provided above the wiring between the first main electrode of the first semiconductor element and the first external terminal in the frame.
  • the semiconductor device has a first control terminal connection for connecting the control electrode of the first semiconductor element and the first external control terminal above the wiring between the first main electrode of the first semiconductor element and the first external terminal. May be provided.
  • the first control terminal connection portion may include a bonding wire that electrically connects the control electrode of the first semiconductor element and the first external control terminal.
  • the first control terminal connection unit may include a control wiring board having a control wiring layer connected to the first external control terminal.
  • the first control terminal connection portion may include a bonding wire that electrically connects the control electrode of the first semiconductor element and the control wiring layer of the control wiring board.
  • the first external control terminal may extend upward from the connection portion with the control wiring board.
  • a resin member of the frame may be provided between the lower surface of the control wiring board and the upper surface of the first terminal connection portion.
  • the insulating portion on the lower surface may be in contact with the upper surface of the first terminal connecting portion.
  • the first semiconductor element may have a plurality of control electrodes. Each of the plurality of first external control terminals electrically connected to each of the plurality of control electrodes of the first semiconductor element includes at least wiring between the first main electrode and the first external terminal of the first semiconductor element. One may be provided above.
  • the bonding wire may be wired in parallel with the first terminal connection portion in a top view.
  • the semiconductor device may further include a second substrate that is accommodated between a second side portion of the frame that faces the first side portion and the first substrate, and that has a second conductive layer on an upper surface thereof.
  • the semiconductor device may further include a second semiconductor element mounted on the second conductive layer, having a first main electrode connected to the second conductive layer on the lower surface, and having a second main electrode and a control electrode on the upper surface. .
  • the second main electrode of the second semiconductor element and the first conductive layer may be electrically connected.
  • the semiconductor device may further include a second external control terminal provided above or between the second side portion and the second semiconductor element in the frame.
  • the semiconductor device may further include a second control terminal connection portion that connects between the control electrode of the second semiconductor element and the second external control terminal.
  • the semiconductor device may include a third external terminal provided on at least one of a third side portion between the first side portion and the second side portion in the frame and a fourth side portion facing the third side portion. .
  • the semiconductor device may include a first conductive plate connected to the third external terminal and extending along the first side portion above the first substrate.
  • the semiconductor device may include a fourth external terminal provided closer to the second side than the third external terminal on at least one of the third side and the fourth side.
  • the semiconductor device may include a second conductive plate connected to the fourth external terminal and extending along the second side portion above the second substrate.
  • the second main electrode of the first semiconductor element in each of the plurality of first units may be electrically connected to the first conductive plate.
  • the second conductive layer in each of the plurality of second units may be electrically connected to the second conductive plate. (Item 13)
  • the first conductive plate may connect between the third external terminal on the third side and the third external terminal on the fourth side.
  • the second conductive plate may connect between the fourth external terminal on the third side portion side and the fourth external terminal on the fourth side portion side.
  • the first conductive plate and the second conductive plate may be extended in a direction orthogonal to the extending direction of the first terminal connection portion.
  • the semiconductor device may be an inverter device.
  • the first unit may form a lower arm of the inverter device.
  • the second unit may form the upper arm of the inverter device.
  • the semiconductor device is mounted on the first conductive layer of the first substrate in parallel with the first semiconductor element on the side opposite to the first external terminal with respect to the first semiconductor element, and is connected to the first conductive layer on the lower surface.
  • a third semiconductor element having a main electrode and having a second main electrode and a control electrode on the upper surface may be provided.
  • the semiconductor device may include a first inter-semiconductor element connection portion that connects between the second main electrode of the first semiconductor element and the second main electrode of the third semiconductor element.
  • the semiconductor device includes a magnetic core provided at an outer periphery of a wiring portion between the exposed portion of the first conductive layer and the first external terminal in the first terminal connection portion, and having a gap at a part of the outer periphery of the wiring portion. You may prepare.
  • the semiconductor device may include a magnetic sensor disposed in the gap of the magnetic core.
  • a method for manufacturing a semiconductor device In a second aspect of the present invention, a method for manufacturing a semiconductor device is provided.
  • a first substrate having a first conductive layer on an upper surface may be prepared.
  • a first semiconductor element having a first main electrode on a lower surface and a second main electrode and a control electrode on an upper surface may be prepared.
  • the first semiconductor element In the method for manufacturing a semiconductor device, the first semiconductor element may be mounted on the first conductive layer, and the first main electrode may be connected to the first conductive layer.
  • the first external terminal is provided on the first side, and the first external terminal is positioned above the wiring provided between the first main electrode and the first external terminal of the first semiconductor element.
  • a frame provided with a control terminal may be prepared.
  • the first substrate may be accommodated in a frame.
  • the exposed portion of the first conductive layer between the first semiconductor element and the first external terminal and the first external terminal may be connected by the first terminal connection portion.
  • a method of manufacturing a semiconductor device includes a first control terminal between a control electrode of a first semiconductor element and a first external control terminal above a wiring between a first main electrode of the first semiconductor element and a first external terminal. You may connect by a connection part.
  • FIG. 1 is a plan view showing a semiconductor device 1 according to the present embodiment.
  • FIG. 2 is a perspective view showing the semiconductor device according to this embodiment.
  • the X direction and the Y direction are directions perpendicular to each other, and the Z direction is a direction perpendicular to the XY plane.
  • the X direction, the Y direction, and the Z direction form a so-called right-handed system.
  • the first semiconductor element of this example has an upper surface in the + Z direction and a lower surface in the ⁇ Z direction. That is, “upper” and “upper” mean the + Z direction.
  • “down” and “down” mean the ⁇ Z direction.
  • the + Y direction is the N side (negative electrode side)
  • the ⁇ Y direction is the P side (positive electrode side).
  • the semiconductor device 1 includes a frame 112, an N-side substrate 2000 having an N-side conductive layer 206 on the upper surface, an output terminal 313 provided on the frame 112, and an N-side conductive layer 206.
  • the semiconductor device 1 includes a case 100 having a frame 112, an N-side substrate 2000, an output terminal 313, an N-side semiconductor element 311, an output terminal connection unit 314, an N-side external control terminal 315, and an N-side control terminal connection unit 317.
  • one or more legs 300 having The semiconductor device 1 may further include a power supply unit 400 that supplies power to the legs 300.
  • the semiconductor device 1 may be an inverter device as an example.
  • the case 100 may be formed in a hollow flat box shape, and one or a plurality of legs 300 may be accommodated in the case 100.
  • the plurality of legs 300 may function as a set of arms that perform switching in the inverter device.
  • the plurality of legs 300 are arranged in one direction, and may be arranged in the X direction, for example.
  • the N-side conductive layer 206 is an example of a first conductive layer
  • the N-side substrate 2000 is an example of a first substrate.
  • the output terminal 313 is an example of a first external terminal
  • the output terminal connection unit 314 is an example of a first terminal connection unit.
  • the N-side semiconductor element 311 is an example of a first semiconductor element.
  • the N-side external control terminal 315 is an example of a second external control terminal
  • the N-side control terminal connection unit 317 is an example of a first control terminal connection unit.
  • the case 100 has a frame-like frame 112 (see FIG. 1), and is formed of a resin such as polyphenylene sulfide (PPS) or polybutylene terephthalate (PBT).
  • PPS polyphenylene sulfide
  • PBT polybutylene terephthalate
  • FIG. 1 the frame 112 is hatched, and in FIG. 2, the frame 112 is not shown.
  • the frame 112 includes a first side portion 1121, a second side portion 1122, a third side portion 1123, and a fourth side portion 1124.
  • the first side portion 1121 and the second side portion are included.
  • the portions 1122 face each other and are preferably parallel to the X direction.
  • the third side portion 1123 and the fourth side portion 1124 face each other, and are preferably parallel to the Y direction, respectively, and orthogonal to the first side portion 1121 and the second side portion 1122.
  • the first side portion 1121 and the second side portion 1122 are longer than the third side portion 1123 and the fourth side portion 1124.
  • a rectangular parallelepiped resin block 1126 through which each N-side external control terminal 315 and each P-side external control terminal 325 in a leg 300 described later passes (see FIG. 1). May be arranged.
  • the P-side external control terminal 325 is an example of a second external control terminal.
  • the case 100 may have a lid (not shown) on the top of the frame 112.
  • the lid covers and protects the inside of the case 100.
  • the lid may prevent the sealing material 116 from leaking out of the case 100 when the case 100 is filled with the sealing material 116 as shown in FIG.
  • the sealing material 116 may be in the form of a gel or may be solidified. Silicon gel or the like can be used as the gel-like sealing material 116, and epoxy resin or the like can be used as the sealing material 116 to be solidified.
  • the lid may be a substrate on which another semiconductor element or semiconductor chip (not shown) is mounted.
  • each leg 300 includes a set of an N-side unit 301 and a P-side unit 302 as an arm for performing switching, and a substrate unit 200.
  • the N-side unit 301 may form a lower arm connected to the negative terminal of the power supply
  • the P-side unit 302 may form an upper arm connected to the positive terminal of the power supply.
  • the N-side unit 301 is disposed on the first side portion 1121 (see FIG. 1) side, that is, the + Y side
  • the P-side unit 302 is disposed on the second side portion 1122 (see FIG. 1) side, that is, on the ⁇ Y side. May be arranged.
  • the N-side unit 301 is an example of a first unit
  • the P-side unit is an example of a second unit.
  • three legs 300 may form a set.
  • the semiconductor device 1 includes six legs 300 to form two sets. Three legs 300 included in such a set output U-phase, V-phase, and W-phase AC signals from three output terminals 313.
  • the semiconductor device 1 may include other numbers of legs 300, and the legs 300 may have other functions.
  • the semiconductor device 1 may not include the P-side unit 302 as the upper arm of the leg 300.
  • the P-side unit 302 is formed as an external device for the semiconductor device 1, and the N-side unit 301 included in the semiconductor device 1 and the P-side unit as the external device 302 may be connected and used.
  • the substrate part 200 is housed in a frame 112 (see FIG. 1) and has one or more N-side substrates 2000 on which one or more N-side conductive layers 206 are formed.
  • the substrate part 200 is accommodated between the second side part 1122 (see FIG. 1) in the frame 112 and the N-side substrate 2000, and one or more P-side conductive layers 207 are formed on the upper surface.
  • a P-side substrate 2001 may be included.
  • the P-side conductive layer 207 is an example of a second conductive layer
  • the P-side substrate 2001 is an example of a second substrate.
  • the N-side substrate 2000 and the P-side substrate 2001 may be provided for each leg 300 or may be a common substrate for the plurality of legs 300. Further, the N-side substrate 2000 and the P-side substrate 2001 may be the N-side portion and the P-side portion of the common substrate with respect to the N-side unit 301 and the P-side unit 302.
  • the N-side substrate 2000 has an insulating substrate 204 and one or more N-side conductive layers 206 disposed on the insulating substrate 204.
  • the P-side substrate 2001 includes an insulating substrate 205 and a plurality of P-side conductive layers 207 disposed on the insulating substrate 205.
  • the N-side substrate 2000 and the P-side substrate 2001 may be arranged along the Y direction, and the N-side substrate 2000 is located in the + Y direction rather than the P-side substrate 2001.
  • the insulating substrates 204 and 205, the N-side conductive layer 206, and the P-side conductive layer 207 may be integrated by direct bonding or brazing. 1 and 2, the N-side conductive layer 206 and the P-side conductive layer 207, and N-side semiconductor elements 311 and 312 and P-side semiconductor elements 321 and 322 described later are hatched.
  • the N-side semiconductor element 312 is an example of a third semiconductor element.
  • the insulating substrate 204 supports one or a plurality of N-side conductive layers 206 at the top, and electrically insulates the N-side conductive layer 206 from a member below the N-side conductive layer 206, for example, a heat sink 202 described later.
  • the insulating substrate 205 supports one or a plurality of P-side conductive layers 207 at the top, and electrically insulates the P-side conductive layer 207 from its lower member, for example, a heat sink 202 described later.
  • the insulating substrates 204 and 205 may be ceramic plates.
  • the N-side conductive layer 206 and the P-side conductive layer 207 are formed of a conductive metal such as copper in a circuit shape, for example, a plurality of land shapes.
  • the N-side conductive layer 206 is formed on the insulating substrate 204
  • the P-side conductive layer 207 is formed on the insulating substrate 205.
  • the N-side conductive layer 206 and the P-side conductive layer 207 are formed long in the Y direction so that the plurality of N-side semiconductor elements 311 and 312 and the P-side semiconductor elements 321 and 322 are mounted in parallel in the Y direction. It's okay.
  • the N-side conductive layer 206 and the P-side conductive layer 207 may be formed in a line shape.
  • a heat radiating plate 202 for cooling the leg 300 may be provided on the lower surface side of the N-side substrate 2000 and the P-side substrate 2001.
  • a heat radiating plate 202 for cooling the leg 300 may be provided on the lower surface side of the N-side substrate 2000 and the P-side substrate 2001.
  • the heat sink 202 is illustrated in FIGS. 1 and 2, it is illustrated by a two-dot chain line in FIG. 1.
  • the heat sink 202 may cover the inner bottom surface of the case 100, and may support the N-side substrate 2000 and the P-side substrate 2001 from below in different regions. Moreover, the heat sink 202 may be a copper plate. Note that the heat radiating plate 202 and the insulating substrates 204 and 205 may be joined by solder or the like. As shown in FIG. 7 to be described later, a metal heat transfer layer 203 such as copper may be provided between the heat sink 202 and the insulating substrate 204 and between the heat sink 202 and the insulating substrate 205. . The heat transfer layer 203 and the insulating substrates 204 and 205 may be integrated by direct bonding or brazing.
  • Each N-side unit 301 includes an N-side semiconductor element 311, an output terminal connection 314, one or more N-side external control terminals 315, and an N-side control terminal connection 317. Further, the N-side unit 301 may include one or a plurality of N-side semiconductor elements 312 in parallel with the N-side semiconductor element 311 so as to adapt to a large current.
  • N-side semiconductor elements 311 and 312 are mounted on the N-side conductive layer 206.
  • the N-side semiconductor element 312 is provided in parallel to the N-side semiconductor element 311 on the opposite side of the first side portion 1121 from the N-side semiconductor element 311, that is, in the ⁇ Y direction.
  • Each of these N-side semiconductor elements 311 and 312 has a first main electrode on the lower surface, a second main electrode on the upper surface, and one or more control electrodes.
  • the first main electrodes on the lower surfaces of the N-side semiconductor elements 311 and 312 are electrically and mechanically bonded to the N-side conductive layer 206 with solder or the like.
  • Each control electrode is an electrode for controlling on / off or resistance between the main electrodes, or for monitoring (sense) the voltage or temperature of the main electrode.
  • the control electrode may have a smaller area than the main electrode, and a smaller current flows than the main electrode.
  • the first semiconductor elements 311 and 312 are vertical semiconductor chips on which switching elements such as power MOSFETs and IGBTs are formed, and semiconductor chips on which diode elements are formed.
  • the N-side semiconductor element 311 or the like may be a semiconductor chip on which an RC-IGBT having both a switching element and a diode element is formed. More specifically, although details will be described later with reference to FIG. 11, the N-side semiconductor elements 311 and 312 are semiconductors on which a temperature sensing diode and an RC-IGBT (Reverse Conducting IGBT) element are mounted. Chip. This semiconductor chip has a collector electrode of an RC-IGBT element as a first main electrode.
  • the semiconductor chip has an emitter electrode of an IGBT element as the second main electrode.
  • the semiconductor chip has a RC-IGBT element gate electrode, a sense emitter electrode, a Kelvin emitter electrode, and an anode electrode and a cathode electrode of a temperature sensing diode as a plurality of control electrodes.
  • the sense emitter electrode is an electrode for taking out and measuring a part of the emitter current.
  • the substrate of the semiconductor chip may be silicon, silicon carbide or gallium nitride.
  • the first main electrode, the second main electrode, and the control electrode may be other electrodes in the semiconductor chip.
  • the N-side semiconductor elements 311 and 312 may be semiconductor elements having other circuit configurations.
  • the N-side semiconductor elements 311 and 312 may be different types of elements.
  • the first main electrode (collector electrode) on the lower surface is electrically connected to the N-side conductive layer 206 as described above.
  • control electrodes (gate electrode, Kelvin emitter electrode, sense emitter electrode, anode electrode, and cathode electrode) on the upper surface are connected via an N-side control terminal connection portion 317, as will be described in detail later.
  • the N-side external control terminal 315 is electrically connected.
  • the second main electrodes on the upper surface are electrically connected by an N-side inter-element connection portion 318 such as a jumper terminal.
  • An N-side conductive plate 404 in a power supply unit 400 described later is electrically connected to the N-side inter-element connection unit 318.
  • the N-side inter-element connection portion 318 may be formed by pressing a metal plate.
  • the N-side inter-element connection portion 318 includes two plate portions that are in close contact with the first main electrode (emitter electrode) on the upper surface of each N-side semiconductor element 311, 312, and an N-side conductive plate.
  • the N-side inter-element connection portion 318 is an example of a first inter-element connection portion.
  • the N-side conductive plate 404 is an example of a first conductive plate, and may be connected to the negative electrode of the power source.
  • N side external control terminal and N side control terminal connection part As shown in FIGS. 1 and 2, the N-side external control terminal 315 and the N-side control terminal connection portion 317 are connected to the control terminals (gate electrode, Kelvin emitter electrode, sense emitter electrode, anode electrode, and cathode electrode) of the N-side unit 301. ) Is pulled out of the case 100.
  • the N-side unit 301 since the N-side unit 301 has five control electrodes, five sets of the N-side external control terminal 315 and the N-side control terminal connection portion 317 may be connected to any one of the control electrodes.
  • the N-side external control terminal 315 is, for example, formed in a pin shape with a conductive metal, and a midway portion is embedded in the first side portion 1121 (see FIG. 1). Further, one end of the N-side external control terminal 315 extends from the first side 1121 and the resin block 1126 to the upper side of the case 100 and is connected to an external device (not shown). The other end of the N-side external control terminal 315 is bent and extends from the first side 1121 to the inside of the case 100.
  • the conductive metal for example, copper, a copper alloy (brass, phosphor bronze, C194 copper alloy, etc.), aluminum, or a copper-aluminum clad material as a conductive material can be used.
  • the N-side control terminal connection 317 is between the control electrode (gate electrode, Kelvin emitter electrode, sense emitter electrode, anode electrode, and cathode electrode) of the N-side unit 301 and the other end of the N-side external control terminal 315. Connect electrically.
  • the N-side control terminal connection 317 may include a bonding wire 3172 such as aluminum that is electrically and mechanically connected to the control electrode of the N-side unit 301.
  • the N-side control terminal connection portion 317 may have a plate formed by bending a conductive metal plate instead of the bonding wire 3172. The details of the connection between the N-side control terminal connection portion 317 and the N-side semiconductor elements 311 and 312 will be described later with reference to FIGS.
  • the output terminal 313 is formed of a conductive metal and is provided on the first side portion 1121 (see FIG. 1) of the frame 112 in order to connect the semiconductor device 1 to an external device.
  • the output terminal 313 may be provided on the outer surface of the first side portion 1121 and extend to the outside of the frame 112.
  • the output terminal 313 may be formed wide along the X direction as long as it does not contact the output terminal 313 of the adjacent leg 300. For example, when a plurality of N-side external control terminals 315 are included in the leg 300, the output terminal 313 is formed wider than the width in the X direction for the entire plurality of N-side external control terminals 315. Good. As an example, the output terminal 313 may be formed wider in the X direction than the resin block 1126 through which the plurality of N-side external control terminals 315 penetrate (see FIG. 1). Since the output terminal 313 is formed wide as described above, heat generation at the output terminal 313 can be reduced and a large current can flow.
  • the output terminal connection portion 314 is formed of a conductive metal, and connects the exposed portion of the N-side conductive layer 206 between the N-side semiconductor elements 311 and 312 and the output terminal 313 and the output terminal 313.
  • the exposed portion of the N-side conductive layer 206 is a portion that can be electrically connected to other members, for example, a portion that is not covered by the N-side semiconductor elements 311 and 312 and a conductive terminal 260 described later. It does not matter whether it is sealed with the sealing material 116 or not.
  • the output terminal connection portion 314 is provided through the first side portion 1121 from the exposed portion of the N-side conductive layer 206 inside the case 100, and is electrically connected to the output terminal 313 on the outer surface of the first side portion 1121. (See the right end of FIG. 2).
  • the output terminal connection portion 314 may be integrally formed with the output terminal 313 from a conductive metal.
  • the end of the output terminal connecting portion 314 opposite to the output terminal 313, that is, the end on the inner side of the case 100 may be electrically and mechanically connected to the N-side conductive layer 206.
  • the output terminal connection portion 314 may be formed by pressing a metal plate.
  • the output terminal connection portion 314 includes a plate portion that is in close contact with the exposed portion of the N-side conductive layer 206, a plate portion that penetrates the first side portion 1121, and an N-side conductive layer.
  • a connecting portion that connects between plate portions across the exposed portion of 206 from the first side portion 1121 may be provided.
  • the output terminal connecting portion 314 may extend in the Y direction as shown in FIGS. Further, the output terminal connection portion 314 may be formed wide along the X direction, similarly to the output terminal 313. Since the output terminal connection portion 314 is thus formed wide, heat generation at the output terminal connection portion 314 can be reduced and a large current can flow.
  • a magnetic sensor unit 305 may be provided in a wiring portion between the exposed portion of the N-side conductive layer 206 and the output terminal 313 in the output terminal connection unit 314. Details of the magnetic sensor unit 305 will be described later with reference to FIGS. 9 and 10.
  • Each P-side unit 302 includes a P-side semiconductor element 321, one or more P-side external control terminals 325 and a P-side control terminal connection portion 327. Further, the P-side unit 302 may include a P-side semiconductor element 322 in parallel with the P-side semiconductor element 321 in order to adapt to a large current.
  • the P-side semiconductor element 321 is an example of a second semiconductor element
  • the P-side control terminal connection unit 327 is an example of a second external control terminal.
  • the P-side semiconductor elements 321 and 322 are mounted on the P-side conductive layer 207.
  • the P-side semiconductor element 322 is provided in parallel to the P-side semiconductor element 321 on the first side portion 1121 side with respect to the P-side semiconductor element 321.
  • Each of these P-side semiconductor elements 321 and 322 has a first main electrode on the lower surface, a second main electrode on the upper surface, and one or more control electrodes.
  • the first main electrodes on the lower surfaces of the P-side semiconductor elements 321 and 322 are electrically and mechanically connected to the P-side conductive layer 207 with solder or the like.
  • the P-side semiconductor elements 321 and 322 are elements similar to the N-side semiconductor element 311, respectively, but may be different types of elements from the N-side semiconductor element 311.
  • the P-side semiconductor element 321 and the P-side semiconductor element 322 may be different types of elements.
  • the first main electrode (collector electrode) on the lower surface is electrically connected to the P-side conductive layer 207 as described above.
  • the first main electrodes (collector electrodes) of the P-side semiconductor elements 321 and 322 are electrically connected to the P-side conductive plate 406 to be described later via the P-side conductive layer 207 and the like.
  • the P-side conductive plate 406 is an example of a second conductive plate, and may be connected to the positive electrode of the power source.
  • control electrodes gate electrode, Kelvin emitter electrode, sense emitter electrode, anode electrode, and cathode electrode on the upper surface are electrically connected to the P-side control terminal connection portion 327. .
  • the second main electrode (emitter electrode) on the upper surface is electrically connected to the N-side conductive layer 206 disposed below the N-side semiconductor elements 311 and 312.
  • the second main electrodes (emitter electrodes) of the P-side semiconductor elements 321 and 322 may be electrically connected by a P-side inter-element connection portion 328 such as a jumper terminal.
  • a conductive terminal 260 (see FIG. 2) may be disposed on the N-side conductive layer 206 disposed below the N-side semiconductor elements 311 and 312.
  • the P-side inter-element connection portion 328 and the conductive terminal 260 may be electrically connected by a jumper terminal 326.
  • the P-side external control terminal 325 and the P-side control terminal connection portion 327 lead out the control terminals (gate electrode, Kelvin emitter electrode, sense emitter electrode, anode electrode, and cathode electrode) of the P-side unit 302 to the outside of the case 100.
  • the P-side unit 302 since the P-side unit 302 has five control electrodes, five sets of the P-side external control terminal 325 and the P-side control terminal connection portion 327 may be connected to any one of the control electrodes.
  • the P-side external control terminal 325 and the P-side control terminal connection part 327 may be provided at positions facing the N-side external control terminal 315 and the N-side control terminal connection part 317 along the Y direction.
  • the P-side external control terminal 325 is provided above the second side portion 1122 of the frame 112 and the P-side semiconductor element 321 or on the second side portion 1122.
  • the P-side external control terminal 325 is embedded in, for example, the sealing material 116. It may be fixed or provided through the lid of the case 100.
  • the P-side external control terminal 325 is provided on the second side portion 1122 (see FIG. 1).
  • the P-side external control terminal 325 is formed in a pin shape using the same metal as that of the N-side external control terminal 315, and a midway part is embedded in the second side part 1122. Further, one end of the P-side external control terminal 325 extends from the second side portion 1122 and the resin block 1126 to the upper side of the case 100 and is connected to an external device (not shown). The other end of the P-side external control terminal 325 is bent and extends from the second side 1122 to the inside of the case 100.
  • the P-side control terminal connection 327 is between the control electrode (gate electrode, Kelvin emitter electrode, sense emitter electrode, anode electrode, and cathode electrode) of the P-side unit 302 and the other end of the P-side external control terminal 325. Connect electrically.
  • the P-side control terminal connection portion 327 includes a bonding wire 3272 such as aluminum that is directly or indirectly connected to the control electrode of the P-side unit 302 via the P-side conductive layer 207. It's okay.
  • the P-side control terminal connection portion 327 may have a plate formed by bending a conductive metal plate instead of the bonding wire 3272. The details of the connection between the P-side control terminal connection portion 327 and the P-side semiconductor elements 321 and 322 will be described later with reference to FIGS.
  • the power supply unit 400 supplies power to one or a plurality of legs 300, and supplies, for example, a direct current of positive voltage and negative voltage.
  • the power supply unit 400 may include an N-side input terminal 401, a P-side input terminal 402, an N-side conductive plate 404 and a P-side conductive plate 406.
  • the N-side input terminal 401 is an example of a third external terminal
  • the P-side input terminal 402 is an example of a fourth external terminal.
  • the N-side input terminal 401 is provided on at least one of the third side portion 1123 and the fourth side portion 1124. In the present embodiment, the N-side input terminal 401 is provided on both the third side portion 1123 and the fourth side portion 1124.
  • the N-side input terminal 401 may be connected to a negative electrode of a DC power source, for example, a negative electrode of a battery.
  • the P-side input terminal 402 is provided closer to the second side portion 1122 than the N-side input terminal 401 in at least one of the third side portion 1123 and the fourth side portion 1124. In the present embodiment, the P-side input terminal 402 is provided on both the third side portion 1123 and the fourth side portion 1124.
  • the P-side input terminal 402 may be connected to a positive electrode of a DC power source, for example, a positive electrode of a battery.
  • the N-side conductive plate 404 and the P-side conductive plate 406 are electrodes for flowing a direct current through the leg 300.
  • the N-side conductive plate 404 and the P-side conductive plate 406 may be printed circuit boards or conductive metal plates.
  • the N-side conductive plate 404 may be electrically connected to N-side inter-element connection portions 318 provided on the upper surfaces of the N-side semiconductor elements 311 and 312, respectively.
  • the P-side conductive plate 406 may be electrically connected to the first main electrode (collector electrode) on the lower surface of the P-side semiconductor elements 321 and 322 via the P-side conductive layer 207. Details of the N-side conductive plate 404 and the P-side conductive plate 406 will be described later.
  • the power supply unit 400 or the semiconductor device 1 may include a step-up / down converter 500 for raising and lowering the voltage of the DC power supply and supplying the voltage to each leg 300 (see FIG. 1 and FIG. 2). 1, refer to the center in the X direction).
  • the buck-boost converter 500 includes one or more N-side semiconductor switches 501 connected to the N-side conductive plate 404 and one or more P-types connecting the N-side semiconductor switch 501 and the P-side conductive plate 406. Side semiconductor switch 502 and an intermediate terminal 503 connected between the N side semiconductor switch 501 and the P side semiconductor switch 502 and extending to the outside.
  • a reactor and a DC power source can be connected in series between the intermediate terminal 503 and the N-side input terminal 401.
  • a smoothing capacitor can be connected between the P-side input terminal 402 and the N-side input terminal 401.
  • the buck-boost converter 500 increases the induced current of the reactor by turning on the N-side semiconductor switch 501 and turning off the P-side semiconductor switch 502, turning off the N-side semiconductor switch 501 and turning on the P-side semiconductor switch 502.
  • charges can be accumulated in the smoothing capacitor to increase the voltage between the PNs. Thereby, a voltage higher than that of the DC power supply can be generated and supplied to each leg 300.
  • the output terminal 313 is provided on the first side portion 1121 closer to the N-side semiconductor element 311 in the frame 112, and the first main part on the lower surface side of the N-side semiconductor element 311 is provided.
  • An exposed portion between the N-side semiconductor element 311 and the output terminal 313 in the N-side conductive layer 206 connected to an electrode (for example, a collector electrode) is connected to the output terminal 313.
  • An N-side external control terminal 315 is provided above the connection wiring between the first main electrode of the N-side semiconductor element 311 and the output terminal 313, and a control electrode (eg, a gate electrode) of the N-side semiconductor element 311 Connect electrically.
  • the N-side input terminal 401 and the P-side input terminal 402 are provided on the third side portion 1123 and / or the fourth side portion 1124 adjacent to the first side portion 1121, and are connected to the third external terminal 401.
  • An N-side conductive plate 404 that is connected and extends along the first side portion 1121 and a P-side conductive plate 406 that is connected to the fourth external terminal 402 and extends along the second side portion 1122 are provided.
  • the second main electrode for example, emitter electrode
  • the first main electrode for example, collector
  • the N-side conductive layer 206 connected to the electrode) and the P-side conductive plate 406 are connected. This simplifies the internal connection structure from the power supply terminal to the semiconductor element of each phase and each arm, and also connects the N-side conductive plate 404 and P-side conductive plate 406 for distributing power to the output terminal 313 of each phase.
  • the output wiring can be arranged in a direction substantially orthogonal to each other, and crosstalk between wirings through which a large current flows can be reduced.
  • FIG. 3 is a diagram showing the N-side conductive plate 404 and the P-side conductive plate 406. As shown in FIG. 3 and FIG. 1 described above, the N-side conductive plate 404 is connected to the N-side input terminal 401 and extends along the first side portion 1121 above the N-side substrate 2000. For example, the N-side conductive plate 404 may connect between the N-side input terminal 401 on the third side 1123 side and the N-side input terminal 401 on the fourth side 1124 side.
  • the N-side conductive plate 404 is electrically connected to the second main electrode (emitter electrode) on the upper surface of each N-side semiconductor element 311, 312 of the plurality of N-side units 301.
  • the N-side conductive plate 404 may be electrically connected to N-side inter-element connection portions 318 provided on the upper surfaces of the N-side semiconductor elements 311 and 312, respectively.
  • the P-side conductive plate 406 is connected to the P-side input terminal 402 and extends along the second side portion 1122 above the P-side substrate 2001.
  • the P-side conductive plate 406 may connect the P-side input terminal 402 on the third side 1123 side and the P-side input terminal 402 on the fourth side 1124 side.
  • the P-side conductive plate 406 is electrically connected to the P-side conductive layer 207 of each of the plurality of P-side units 302. Thereby, the P-side conductive plate 406 may be electrically connected to the first main electrodes (collector electrodes) on the lower surfaces of the P-side semiconductor elements 321 and 322 via the P-side conductive layer 207.
  • the P-side conductive plate 406 is electrically connected to each of the plurality of conductive terminals 272 disposed on the P-side conductive layer 207, thereby connecting to the P-side conductive layer 207 via the conductive terminal 272. May be. Note that one conductive terminal 272 may be provided between two adjacent P-side units 302 and shared by these P-side units 302.
  • the N-side conductive plate 404 and the P-side conductive plate 406 may extend in the arrangement direction of the plurality of legs 300, that is, the X direction, in other words, the N-side control terminal connection portion 317 and the P-side control terminal. You may extend
  • the extending direction of the N-side conductive plate 404 and the P-side conductive plate 406 through which a direct current flows, and the N-side control terminal connecting portion 317 and the P-side control terminal connecting portion 327 through which a control signal flows, and / or the AC signal are
  • the extending direction of the flowing output terminal 313 is orthogonal. Therefore, crosstalk occurs between the N-side conductive plate 404 and the P-side conductive plate 406, and the N-side control terminal connection portion 317, the P-side control terminal connection portion 327, and / or the output terminal 313, and the semiconductor device 1 It is possible to prevent the operating characteristics of the camera from deteriorating.
  • N-side control terminal connection [1-5. Connection between N-side control terminal connection and N-side semiconductor element]
  • the N-side external control terminal 315 is disposed closer to the N-side semiconductor element 311 than the N-side semiconductor element 312. Therefore, the N-side control terminal connection portion 317 may be connected to the N-side semiconductor element 311 and the N-side semiconductor element 312 in different modes.
  • FIG. 4 is a partially enlarged view of portion A in FIG.
  • the N-side control terminal connection portion 317 has the same number of control electrodes as the number of control electrodes for the N-side semiconductor element 311 closer to the N-side semiconductor element 312 ( For example, it may be connected to each control electrode (gate electrode, Kelvin emitter electrode, sense emitter electrode, anode electrode and cathode electrode) by 5 bonding wires 3172.
  • the connection between the N-side control terminal connection portion 317 and the N-side semiconductor element 311 will be described later in detail with reference to FIG.
  • the N-side control terminal connection portion 317 is connected to the N-side semiconductor element 312 which is farther than the N-side semiconductor element 311 by bonding wires 3172 having a smaller number (for example, less than 5) of control electrodes. Only some of the control electrodes may be connected.
  • the N-side control terminal connection portion 317 may be connected to only two control electrodes (for example, a gate electrode and a sense emitter electrode) with respect to the N-side semiconductor element 312 by two bonding wires 3172.
  • the N-side control terminal connection portion 317 may be connected to the N-side semiconductor element 312 via the N-side conductive layer 206 provided adjacent to the N-side semiconductor element 311 in the X direction. . Thereby, the N-side inter-element connection portion 318 at the upper part of the N-side semiconductor elements 311 and 312 can be avoided, and the N-side control terminal connection portion 317 and the N-side semiconductor element 312 can be connected.
  • the end of the P-side control terminal connection portion 327 opposite to the P-side external control terminal 325 may be connected to the P-side unit 302 in a different manner for each leg 300.
  • the end portion of the bonding wire 3272 in the P-side control terminal connection portion 327 is different from the P-side unit 302 in the three legs 300 on the ⁇ X side and the P-side unit 302 in the three legs 300 on the + X side. It may be connected in a manner.
  • FIG. 5 is a partially enlarged view of a portion B in FIG. As shown in FIG. 5 and FIGS. 1 and 2, in the three legs 300 on the ⁇ X side, the ends of the bonding wires 3272 may be directly connected to the control electrode of the P-side unit 302.
  • FIG. 6 is a partially enlarged view of a portion C in FIG.
  • the control electrode of the P-side unit 302 is electrically and mechanically connected to the bonding wire 270.
  • the end of the bonding wire 3272 may be connected to the control electrode of the P-side unit 302 via the electrical connection between the bonding wire 270 and the P-side conductive layer 207.
  • the P-side external control terminal 325 is disposed closer to the P-side semiconductor element 321 than the P-side semiconductor element 322. Therefore, the P-side control terminal connection part 327 may be connected to the P-side semiconductor element 321 and the P-side semiconductor element 322 in different modes. For example, the P-side control terminal connection 327 may be connected to the P-side semiconductor element 322 in the same manner as the connection between the N-side control terminal connection 317 and the N-side semiconductor element 312.
  • FIG. 7 is a cross-sectional view of the semiconductor device 1 on the first side portion 1121 side. More specifically, FIG. 7A is a side sectional view showing a main part of the semiconductor device 1 according to the present embodiment. In this figure, the heat sink 202, the first side portion 1121 (frame 112) of the case 100, and the resin block 1126 on the first side portion 1121 are hatched.
  • a frame 112 and an N-side substrate 2000 are disposed on the heat sink 202 in the semiconductor device 1.
  • the N-side substrate 2000 may be bonded to the heat sink 202 via the solder 110
  • the frame 112 may be bonded to the heat sink 202 via the adhesive layer 111.
  • An output terminal connection 314 is provided on the first side 1121 of the frame 112.
  • the output terminal connection portion 314 is electrically connected to the exposed portion of the N-side conductive layer 206 in the N-side substrate 2000.
  • an N-side unit 301 is disposed on the first substrate 2000, and a plurality of control electrodes (gate electrode, Kelvin emitter electrode, sense emitter electrode, anode electrode and cathode electrode) of the first unit 301 are provided.
  • the N-side external control terminal 315 is connected through the N-side control terminal connection portion 317, respectively.
  • the case 100 is filled with the sealing material 116.
  • a heat transfer layer 203 for releasing heat from the insulating substrates 204 and 205 to the heat radiating plate 202 is provided on the lower surface of the insulating substrate 204.
  • each set of the N-side external control terminal 315 and the N-side control terminal connection portion 317 has the control electrode (gate electrode, Kelvin emitter electrode, sense emitter electrode, anode electrode, and cathode electrode) of the first unit 301 as the case 100. Pull out to the outside.
  • the N-side external control terminal 315 is above the wiring between the first main electrode (collector electrode) of the N-side semiconductor element 311 and the output terminal 313 in the frame 112. Is provided.
  • the N-side control terminal connection portion 317 is disposed above the wiring from the first main electrode (collector electrode) of the N-side semiconductor element 311 to the output terminal 313 in the frame 112.
  • a gate electrode, a Kelvin emitter electrode, a sense emitter electrode, an anode electrode and a cathode electrode) and an N-side external control terminal 315 are connected.
  • the N-side external control terminal 315 between the legs 300 is compared with the case where the entire N-side external control terminal 315 and the output terminal 313 of the plurality of legs 300 are arranged in one direction.
  • the interval and the interval between the output terminals 313 can be reduced.
  • the N-side external control terminal 315 may be disposed above the second main electrode (emitter electrode) of the N-side semiconductor element 311 without being embedded in the first side portion 1121 of the case 100.
  • the bonding wire 3172 of the N-side control terminal connection portion 317 may be wired in parallel with the output terminal connection portion 314 in a top view.
  • the N-side conductive plate 404 through which a direct current flows and the bonding wire 3172 through which a control signal flows are orthogonal to each other. Therefore, it is possible to prevent the crosstalk between the N-side conductive plate 404 and the bonding wire 3172 from deteriorating the operating characteristics of the semiconductor device 1.
  • FIG. 7B is a side sectional view of the first side portion 1121 side of the semiconductor device 1 according to the modification example (1).
  • the N-side control terminal connection portion 317 has a control wiring board 3175 and a bonding wire 3172.
  • the control wiring board 3175 is hatched.
  • the control wiring board 3175 is a board on which wiring (not shown) is formed.
  • the control wiring board 3175 is provided with one end embedded in the first side portion 1121 and the other end extending from the first side portion 1121 to the inside of the case 100.
  • the control wiring board 3175 has the same number of wirings as the N-side external control terminal 316 on the upper surface.
  • the control wiring board 3175 may be a printed circuit board (Printed Circuit Board) including, for example, at least one wiring layer made of a conductive material and a board made of a heat resistant material.
  • the resin member of the case 100 is interposed between the lower surface of the control wiring board 3175 and the upper surface of the output terminal connection portion 314 below the N-side control terminal connection portion 317. ing .
  • the resin member of the case 100 is insulative.
  • the resin material of the frame 112 of the case 100 (a spacer previously formed of polyphenylene sulfide (PPS) and integrally formed with the frame 112 may be used.
  • PPS polyphenylene sulfide
  • it may be a resin portion that is filled and cured between the control wiring board 3175 and the output terminal connection portion 314.
  • the bonding wire 3172 includes a control electrode (gate electrode, Kelvin emitter electrode, sense emitter electrode, anode electrode, and cathode electrode) of the N-side semiconductor elements 311 and 312 and a plurality of control wiring boards 3175. Any one of the wirings is electrically connected.
  • the bonding wire 3172 may be connected to the other end portion of the control wiring board 3175 described above that extends from the first side portion 1121 to the inside of the case 100.
  • the N-side unit 301 according to the modification (1) has an N-side external control terminal 316 instead of the N-side external control terminal 315.
  • the N-side external control terminal 316 is formed in a pin shape using a conductive metal, is embedded in the first side portion 1121, and one end portion thereof extends above the case 100 from the connection portion with the control wiring board 3175. And stretched.
  • the other end of the N-side external control terminal 316 is electrically connected to the wiring connected to the corresponding bonding wire 3172 among the plurality of wirings of the control wiring board 3175. Embedded in.
  • the other end of the N-side external control terminal 316 may be press-fitted (press fit) into a through hole formed in the control wiring board 3175 and connected to the wiring. Further, the other end of the N-side external control terminal 316 may be formed in a clip shape and connected to the wiring by sandwiching the end of the control wiring board 3175. The other end of the N-side external control terminal 316 may be soldered to the wiring.
  • the wiring is provided on the surface (lower surface) opposite to the N-side external control terminal 316 in the control wiring board 3175, and the other end of the N-side external control terminal 316 has a through hole in the control wiring board 3175. It may penetrate and be soldered to the wiring.
  • the soldered portion is covered with an epoxy resin and hardened to prevent the solder from melting and flowing into other parts. Is preferred.
  • FIG. 7C is a side sectional view of the first side portion 1121 side of the semiconductor device 1 according to the modification example (2).
  • the insulating portion on the lower surface of the control wiring board 3175 is in contact with the upper surface of the output terminal connecting portion 314 below the N-side control terminal connecting portion 317.
  • the height of the semiconductor device 1 can be reduced as compared with the modification (1) in which the resin portion is interposed between the lower surface of the control wiring board 3175 and the output terminal connection portion 314.
  • the insulating portion on the lower surface of the control wiring board 3175 may be formed of glass epoxy.
  • FIG. 8 is a perspective view showing the N-side external control terminal 315 (or 316) and the P-side external control terminal 325.
  • the plurality of N-side external control terminals 315 (or 316) and the plurality of P-side external control terminals 325 may be integrated as terminal units 3150 and 3250, respectively.
  • the plurality of N-side external control terminals 315 (or 316) and the plurality of P-side external control terminals 325 may be integrated by a resin block 1126 provided in the middle.
  • such terminal units 3150 and 3250 are formed by insert molding in which a plurality of N-side external control terminals 315 (or 316) or a plurality of P-side external control terminals 325 are arranged in a cavity to mold a resin block 1126. Can be formed.
  • the resin material for the resin block 1126 the same or the same material as the resin material for the case 100 may be used.
  • FIG. 9 is a perspective view showing the magnetic sensor unit 305. As shown in this figure, the magnetic sensor unit 305 is provided in the wiring portion between the exposed portion of the N-side conductive layer 206 and the output terminal 313 in the output terminal connection portion 314.
  • the magnetic sensor unit 305 is provided on the outer periphery of the wiring part, and includes a magnetic core 350 having a gap (gap) in a part of the outer periphery of the wiring part, and a magnetic sensor 352 disposed in the gap.
  • the magnetic core 350 circulates a magnetic field generated by a current flowing through the output terminal connection portion 314 on the outer periphery of the output terminal connection portion 314.
  • the magnetic core 350 is generally formed in a ring shape from a magnetic material (ferrite), and has a gap above the wiring portion.
  • the magnetic sensor 352 detects the magnetic flux density in the gap, and is, for example, a Hall element that detects the magnetic flux density and converts it into a voltage.
  • FIG. 10 is a conceptual diagram showing a usage example of the magnetic sensor unit 305.
  • a current measurement circuit 354 is connected to the magnetic sensor unit 305.
  • the circuit 354 includes a constant current source 3540 that supplies power to the magnetic sensor 352 and a differential amplifier 3542 that amplifies the output voltage of the magnetic sensor 352.
  • the magnetic flux density proportional to the amount of current flowing through the output terminal connection unit 314 is detected by the magnetic sensor 352 and converted into a voltage, and this voltage is amplified by the differential amplifier 3542, thereby connecting the output terminal.
  • the amount of current in the unit 314 can be detected.
  • the circuit 354 may be accommodated in the case 100 or may be disposed on the sealing material 116 of the case 100 or an upper portion of the lid.
  • FIG. 11 is a circuit diagram showing three legs 300 in the semiconductor device 1 according to the present embodiment. As shown in this figure, each leg 300 has the N-side semiconductor element 311 of the N-side unit 301 as a lower arm on the N-side conductive plate 404 side, and the P-side as an upper arm on the P-side conductive plate 406 side. A P-side semiconductor element 321 of the unit 302 is included. For simplification, illustration of the N-side semiconductor element 312 of the N-side unit 301 and the P-side semiconductor element 322 of the P-side unit 302 is omitted in FIG.
  • the N-side semiconductor element 311 has a temperature sensing diode 3110 and an RC-IGBT element 3112.
  • the temperature sensing diode 3110 detects the temperature of the substrate of the N-side semiconductor element 311.
  • the temperature sensing diode 3110 has an anode electrode (A) and a cathode electrode (K) as control electrodes on the upper surface, and can measure the temperature of the substrate by measuring the forward voltage. .
  • the RC-IGBT element 3112 has an emitter electrode (E) as a second main electrode, a gate electrode (G) as a control electrode, a sense emitter electrode (S), and a Kelvin emitter electrode (E) on the top surface.
  • a collector electrode (C) as a first main electrode is provided on the lower surface.
  • the Kelvin emitter electrode (E) is electrically connected to the emitter electrode.
  • a free wheel diode (freewheeling diode) 3114 for flowing a current from the emitter electrode (E) to the collector electrode (C) is connected between the emitter electrode (E) and the collector electrode (C). .
  • the P-side semiconductor element 321 includes a temperature sensing diode 3210 and an RC-IGBT element 3212.
  • the temperature sensing diode 3210 detects the temperature of the substrate of the P-side semiconductor element 321 and has an anode electrode (A) and a cathode electrode (K) as control electrodes on the upper surface.
  • the RC-IGBT element 3212 includes an emitter electrode (E) as a second main electrode, a gate electrode (G) as a control electrode, a Kelvin emitter electrode (E), and a sense emitter electrode (S) on the top surface.
  • a collector electrode (C) as a main electrode is provided on the lower surface.
  • the Kelvin emitter electrode (E) and the emitter electrode are electrically connected.
  • a free wheel diode (reflux diode) 3214 that flows current from the emitter electrode (E) to the collector electrode (C) is connected between the emitter electrode (E) and the collector electrode (C). .
  • the P-side input terminal 402 connected to the positive electrode of the DC power supply is connected to the third side portion 1123 and the fourth side portion 1124 of the case 100.
  • the P-side input terminal 402 is connected to a P-side conductive plate 406 extending along the second side portion 1122.
  • the P-side conductive plate 406 is connected to the P-side conductive layer 207 of the P-side unit 302 as the upper arm via a plurality of conductive terminals 272.
  • the P-side conductive layer 207 is connected to the first main electrode (collector electrode (C)) on the lower surface of the P-side semiconductor element 321.
  • the second main electrode (emitter electrode (E)) on the upper surface of the P-side semiconductor element 321 is connected to the N-side conductive layer 206 of the N-side unit 301 via the P-side inter-element connection portion 328, the jumper terminal 326, and the conductive terminal 260. Connected to. Note that a first main electrode (collector electrode (C)) on the lower surface of the N-side semiconductor element 311 is connected to the N-side conductive layer 206.
  • control electrodes (gate electrode (G), Kelvin emitter electrode (E), sense emitter electrode (S), anode electrode (A), and cathode electrode (K)) on the upper surface of the P-side semiconductor element 321 are bonded wires.
  • 270 and the P-side control terminal connection portion 327 are connected to the P-side external control terminal 325 of the second side portion 1122 and pulled out of the case 100.
  • the semiconductor device 1 has the N-side input terminal 401 connected to the negative electrode of the DC power supply on the third side portion 1123 and the fourth side portion 1124 of the case 100.
  • the N-side input terminal 401 is connected to an N-side conductive plate 404 that extends along the first side portion 1121.
  • the N-side conductive plate 404 is electrically connected to the second main electrode (emitter electrode (E)) on the upper surface of the N-side semiconductor element 311 in the N-side unit 301 as the lower arm via a plurality of N-side inter-element connection portions 318. Connected to.
  • the first main electrode (collector electrode (C)) on the lower surface of the N-side semiconductor element 311 is connected to the N-side conductive layer 206.
  • the first main electrode (collector electrode (C)) on the lower surface of the N-side semiconductor element 311 and the second main electrode (emitter electrode (E)) on the upper surface of the P-side semiconductor element 321 are connected to the N-side conductive layer 206. Are connected to each other.
  • the N-side conductive layer 206 is connected to the output terminal 313 of the first side portion 1121 via the output terminal connection portion 314, and the output terminal 313 is connected to an external device (not shown).
  • the magnetic sensor unit 305 detects the magnetic flux density of the magnetic field generated by the current flowing through the output terminal connection unit 314.
  • control electrodes gate electrode (G), Kelvin emitter electrode (E), sense emitter electrode (S), anode electrode (A), and cathode electrode (K)
  • the N-side external control terminal 315 is connected via the control terminal connection unit 317.
  • the N-side external control terminal 315 pulls out the control electrode of the N-side semiconductor element 311 to the outside of the case 100.
  • the DC power is applied between the N-side input terminal 401 and the P-side input terminal 402 while the gate electrodes (G) of the N-side semiconductor element 311 and the P-side semiconductor element 321 are applied.
  • G gate electrodes
  • the RC-IGBT elements 3112 and 312 of the N-side semiconductor element 311 and the P-side semiconductor element 321 are controlled.
  • U-phase, V-phase, and W-phase AC signals are output from the output terminals 313 of the three legs 300. If the temperature measured by the temperature sensing diodes 3110 and 3210 is higher than the reference temperature, control may be performed to reduce heat generation by, for example, reducing the emitter current.
  • the N-side external control terminal 315 is provided above the wiring between the first main electrode (collector electrode) of the N-side semiconductor element 311 and the output terminal 313 in the frame 112. .
  • the N-side control terminal connection portion 317 is disposed above the wiring from the first main electrode (collector electrode) of the N-side semiconductor element 311 to the output terminal 313 in the frame 112.
  • a gate electrode, a Kelvin emitter electrode, a sense emitter electrode, an anode electrode and a cathode electrode) and an N-side external control terminal 315 are connected.
  • the N-side external control terminal 315 between the legs 300 is compared with the case where the entire N-side control terminal connection portion 317 and the output terminal 313 of the plurality of legs 300 are arranged in one direction.
  • the interval and the interval between the output terminals 313 can be reduced. Therefore, the semiconductor device 1 can be reduced in size.
  • the interval between the N-side external control terminal 315 and the interval between the output terminals 313 can be reduced, the current path can be shortened and the material cost can be reduced. Further, since the width of the output terminal 313 can be increased without increasing the size of the semiconductor device 1, heat generation at the output terminal 313 can be reduced. Furthermore, since the output terminal connection portion 314 made of metal and harder than resin is located below the N-side control terminal connection portion 317, the bonding wire 3172 of the N-side control terminal connection portion 317 is ultrasonically applied to the N-side external control terminal 315. When connecting using vibration or the like, resonance of the bonding wire 3172 can be prevented to strengthen the connection.
  • the semiconductor device 900 includes three external terminals 901 that output three-phase AC signals of U, V, and W on one side of the case, and each external terminal 901 has a leg. 910 is connected.
  • Each leg 910 includes, as an upper arm and a lower arm, semiconductor elements 950 and 960 similar to the P-side semiconductor element 321 and the N-side semiconductor element 311.
  • the collector electrode (C) of the semiconductor element 950 as the lower arm is connected to the external terminal 901 and the emitter electrode (E) is connected to the negative electrode (N) of the DC power supply.
  • the gate electrode (G), the sense emitter electrode (S), the Kelvin emitter electrode (E), the anode electrode (A), and the cathode electrode (K) as the control electrodes are each of the above-described one by the five external control terminals 905. It is pulled out of the semiconductor device 900 from the side. In the semiconductor device 900 of this comparative example, the entire five external control terminals 905 and one external terminal 901 of the plurality of legs 910 are arranged in one direction. For this reason, the semiconductor device 900 becomes larger than the semiconductor device 1 according to the present embodiment.
  • FIG. 13 is a flowchart showing a method for manufacturing the semiconductor device 1 according to the present embodiment.
  • an N-side substrate 2000 and an N-side semiconductor element 311 are prepared (S100, S102).
  • a P-side substrate 2001 may be prepared in addition to the N-side substrate 2000, or a substrate unit 200 including these may be prepared.
  • an N-side semiconductor element 312 and P-side semiconductor elements 321 and 322 may be prepared. Note that the processes of S100 and S102 may be performed in the reverse order.
  • the N-side semiconductor element 311 is mounted on the N-side conductive layer 206 of the N-side substrate 2000, and the first main electrode (collector electrode) is connected to the N-side conductive layer 206 (S104).
  • the P-side semiconductor element 321 may be mounted on the P-side conductive layer 207 and the first main electrode may be connected to the P-side conductive layer 207.
  • the N-side semiconductor element 311 and the P-side semiconductor element 321 are arranged so that a plurality of pairs of the N-side semiconductor element 311 and the P-side semiconductor element 321 are arranged in parallel along the first side portion 1121. Glue. This adhesion may be performed with solder.
  • the N-side semiconductor elements 312 and 322 may be bonded to the substrate portion 200.
  • the second main electrodes of the N-side semiconductor elements 311 and 312 are connected between the second main electrodes of the P-side semiconductor elements 321 and 322 by the N-side element connecting portion 318.
  • Each of the parts 328 may be electrically connected.
  • the conductive terminal 260 disposed on the N-side conductive layer 206 of the substrate part 200 and the P-side inter-element connection part 328 may be electrically connected by a jumper terminal 326.
  • the frame 112 provided with the output terminal 313 and the N-side external control terminal 315 is prepared (S106).
  • the N-side input terminal 401 and the P-side input terminal 402 may be provided on the third side portion 1123 and the fourth side portion 1124.
  • the P-side external control terminal 325 may be provided on the second side portion 1122, and the output terminal connection portion 314, the output terminal 313, and the N-side external control terminal 315 (or 316) may be provided on the first side portion.
  • the N-side external control terminal 315 When the N-side external control terminal 315 (or 316) is provided, the N-side external control is provided at a position corresponding to the upper side of the wiring provided between the first main electrode of the N-side semiconductor element 311 and the output terminal 313 in the frame 112.
  • a terminal 315 (or 316) may be arranged. Note that the process of S106 may be performed before the process of S100, or may be performed between S100 and S104.
  • the terminal units 3150 and 3250 of the N-side external control terminal 315 (or 316) and the P-side external control terminal 325 may be prepared by insert molding.
  • the output terminal connection part 314 and the output terminal 313 are embedded in the 1st side part 1121, and the terminal unit of the N side external control terminal 315 (or 316) is above them.
  • the frame 112 is integrally formed so that 3150 is embedded.
  • the N-side external control terminal 316 of the terminal unit 3150 and the control wiring board 3175 are electrically connected in the first side part 1121, and the lower surface of the control wiring board 3175 is in contact with the output terminal connection part 314.
  • 112 may be molded.
  • the magnetic core 350 and the magnetic sensor 352 of the magnetic sensor portion 305 are disposed on the outer peripheral portion thereof and embedded in the first side portion 1121, and the magnetic sensor 352
  • the terminal may protrude inside or outside the case 100.
  • the frame 112 is molded as described above, the N-side input terminal 401 and the P-side input terminal 402 are embedded in the third side portion 1123 and the fourth side portion 1124, and the P-side external control is provided in the second side portion 1122.
  • the terminal 325 is embedded.
  • the N-side substrate 2000 is accommodated in the frame 112 (S108).
  • the substrate unit 200 on which the N-side semiconductor element 311 and the P-side semiconductor element 321 are mounted may be accommodated in the frame 112.
  • the N-side substrate 2000 or the like may be accommodated in the frame 112 by adhering a heat sink 202 having the N-side substrate 2000 and the P-side substrate 2001 joined to each other by solder or the like.
  • the exposed portion of the N-side conductive layer 206 between the N-side semiconductor element 311 and the output terminal 313 and the output terminal 313 are connected by the output terminal connection portion 314 (S110).
  • This connection may be performed by soldering or welding (laser welding, ultrasonic welding, or the like).
  • the N-side control terminal connection portion is connected between the control electrode of the N-side semiconductor element 311 and the N-side external control terminal 315.
  • the connection is made through 317 (S112).
  • one end of the bonding wire 3172 is connected to the control electrode on the upper surface of the N-side semiconductor element 311 or the like.
  • the other end of the bonding wire 3172 is connected to the N-side external control terminal 315 (or 316) above the wiring from the first main electrode (collector electrode) of the N-side semiconductor element 311 to the output terminal 313. .
  • the bonding wire 3172 and the N-side external control terminal 315 may be connected by soldering or welding, and the bonding wire 3172 and the control electrode of the N-side semiconductor element 311 may be connected by soldering or the like. May be done.
  • the control electrode of the N-side semiconductor element 312 and the N-side external control terminal 315 may be connected by the N-side control terminal connection portion 317. Further, the control electrodes of the P-side semiconductor elements 321 and 322 and the P-side external control terminal 325 may be connected by a P-side control terminal connection portion 327. In this case, for example, the P-side external control terminal 325 and the control electrode on the upper surface of the P-side semiconductor element 321 and the like are connected by a bonding wire 3272.
  • the bonding wire 3272 and the P-side external control terminal 325 may be connected by soldering or welding, and the bonding wire 3272 and the control electrode of the P-side semiconductor element 321 may be connected by soldering or the like.
  • the N-side conductive plate 404 and the P-side conductive plate 406 may be disposed in the case 100.
  • the N-side conductive plate 404 is electrically connected to the N-side input terminals 401 of the third side portion 1123 and the fourth side portion 1124, respectively, and is connected to the upper portion of the case 100 along the first side portion 1121. Deploy.
  • the N-side conductive plate 404 and the plurality of N-side inter-element connection portions 318 are electrically and mechanically connected by soldering or welding. Thereby, the N-side conductive plate 404 and the second main electrode on the upper surface of the N-side semiconductor element 311 are electrically connected.
  • the P-side conductive plate 406 is electrically connected to the P-side input terminal 402 of the third side portion 1123 and the fourth side portion 1124, and in the case 100 along the second side portion 1122. Place at the top.
  • the P-side conductive plate 406 and the plurality of conductive terminals 272 disposed on the P-side conductive layer 207 are also electrically and mechanically connected by soldering or welding.
  • the P-side conductive plate 406 and the first main electrode on the lower surface of the P-side semiconductor element 321 are electrically connected.
  • the sealing material 116 is filled in the case 100 (S114).
  • the case 100 may be filled with a sealing material 116 such as an epoxy resin and solidified. Thereby, the semiconductor device 1 is manufactured.

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  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Inverter Devices (AREA)
  • Wire Bonding (AREA)

Abstract

Les dispositifs onduleurs classiques sont difficiles à miniaturiser parce que les connexions internes pour les bornes sont compliquées. La présente invention concerne un dispositif à semi-conducteur comportant : un cadre ; une première borne externe disposée sur une première partie latérale du cadre ; un premier substrat logé dans le cadre et portant une première couche conductrice sur sa surface supérieure ; un premier élément à semi-conducteur qui est monté sur la première couche conductrice, qui porte, sur sa surface inférieure, une première électrode primaire connectée à la première couche conductrice, et qui porte, sur sa surface supérieure, une seconde électrode primaire et une électrode de commande ; une partie de connexion de première borne qui connecte la première borne externe à une partie mise à nu de la première couche conductrice entre le premier élément à semi-conducteur et la première borne externe ; une première borne de commande externe qui est disposée au-dessus d'un câblage entre la première électrode primaire du premier élément à semi-conducteur et la première borne externe dans le cadre ; et une partie de connexion de première borne de commande qui, au-dessus du câblage entre la première électrode primaire du premier élément à semi-conducteur et la première borne externe, connecte l'électrode de commande du premier élément à semi-conducteur à la première borne de commande externe.
PCT/JP2017/002335 2016-03-22 2017-01-24 Dispositif à semi-conducteur et procédé de fabrication de dispositif à semi-conducteur WO2017163583A1 (fr)

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JP2018507074A JP6665926B2 (ja) 2016-03-22 2017-01-24 半導体装置および半導体装置の製造方法
CN201780002933.6A CN107924913B (zh) 2016-03-22 2017-01-24 半导体装置及半导体装置的制造方法
US15/903,031 US10283440B2 (en) 2016-03-22 2018-02-23 Semiconductor device and manufacturing method of semiconductor device

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JP2016-056455 2016-03-22

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DE112021000169T5 (de) 2020-06-30 2022-07-28 Fuji Electric Co., Ltd. Halbleitermodul und verfahren zum herstellen eines halbleitermoduls

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JP7010167B2 (ja) * 2018-07-25 2022-01-26 株式会社デンソー 半導体装置
JP6980625B2 (ja) * 2018-09-18 2021-12-15 株式会社東芝 端子板及び半導体装置
JP7103109B2 (ja) * 2018-09-21 2022-07-20 富士電機株式会社 半導体モジュールおよび車両
JP7059970B2 (ja) * 2019-03-11 2022-04-26 株式会社デンソー 半導体装置
JP2021158232A (ja) * 2020-03-27 2021-10-07 富士電機株式会社 半導体モジュール
JP2022103562A (ja) * 2020-12-28 2022-07-08 富士電機株式会社 半導体装置
JP7317182B1 (ja) 2022-05-23 2023-07-28 三菱電機株式会社 半導体装置及びその製造方法
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US20180182694A1 (en) 2018-06-28
CN107924913B (zh) 2020-12-01
CN107924913A (zh) 2018-04-17
JP6665926B2 (ja) 2020-03-13
US10283440B2 (en) 2019-05-07

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